Pressure adjustment method and substrate treatment apparatus

Abstract

To provide a technology enabling a high-quality substrate treatment by properly adjusting a gap between a rotary table and a gas supply structure.SOLUTION: A substrate treatment apparatus includes: a treatment vessel; a rotary table which is rotatably provided inside the treatment vessel, and on which a plurality of substrates are placed at positions radially spaced from a rotational center; and a gas supply structure that supplies gas to the plurality of substrates placed on the rotary table and is displaceable relative to the rotary table. A pressure adjustment method for the substrate treatment apparatus includes: (A) detecting the pressure in the gap between the rotary table and the gas supply structure using a pressure detection part; and (B) adjusting the gap between the rotary table and the gas supply structure by displacing the gas supply structure based on the pressure detected by the pressure detection part.SELECTED DRAWING: Figure 7

Description

Technical Field

[0001] The present disclosure relates to a pressure adjustment method and a substrate processing apparatus.

Background Art

[0002] Patent Document 1 discloses a substrate processing apparatus (film forming apparatus) that places a plurality of substrates on a rotating table provided in a processing chamber and supplies a plurality of types of processing gases into the processing chamber while rotating the rotating table to perform substrate processing such as film formation on the substrates. In order to suppress the mixing of a plurality of types of processing gases, this substrate processing apparatus forms a low ceiling surface with a fan-shaped convex portion and supplies a separation gas into the gap between the rotating table and the convex portion, thereby separating the space in the processing chamber into separation regions in the circumferential direction.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] The present disclosure provides a technique capable of appropriately adjusting the gap between a rotating table and a gas supply structure, thereby promoting an improvement in the quality of substrate processing.

Means for Solving the Problems

[0005] According to one aspect of the present disclosure, there is provided a method for adjusting the pressure of a substrate processing apparatus including a processing container, a rotary table rotatably provided inside the processing container for placing a plurality of substrates at positions radially away from the rotation center, and a gas supply structure for supplying gas to the plurality of substrates placed on the rotary table and displaceable relative to the rotary table, the method comprising: (A) a step of detecting the pressure in the gap between the rotary table and the gas supply structure by a pressure detection unit; and (B) a step of displacing the gas supply structure based on the pressure detected by the pressure detection unit to adjust the gap between the rotary table and the gas supply structure.

Advantages of the Invention

[0006] According to one aspect, by appropriately adjusting the gap between the rotary table and the gas supply structure, it is possible to promote an improvement in the quality of substrate processing.

Brief Description of the Drawings

[0007]

Figure 1

Figure 2

Figure 3

Figure 4

Figure 5

Figure 6

Figure 7

Figure 8

Mode for Carrying Out the Invention

[0008] Hereinafter, embodiments for carrying out the present disclosure will be described with reference to the drawings. In each drawing, the same reference numerals are given to the same components, and redundant descriptions may be omitted.

[0009] [Configuration of Substrate Processing Apparatus] With reference to FIGS. 1 to 3, the substrate processing apparatus 1 according to the embodiment will be described. FIG. 1 is a longitudinal sectional view showing a configuration example of the substrate processing apparatus 1 according to the embodiment. FIG. 2 is a plan view showing the configuration inside the processing container 11 of the substrate processing apparatus 1 in FIG. 1. In FIG. 2, for convenience of explanation, the illustration of the top plate 112 of the processing container 11 is omitted. FIG. 3 is a perspective view showing the configuration of the rotary table 21 and the mounting table 211 in the substrate processing apparatus 1 in FIG. 1.

[0010] The substrate processing apparatus 1 is configured as an apparatus that performs a substrate process (film forming process) for forming a film on the surface of the substrate W by an atomic layer deposition (ALD) method or a molecular layer deposition (MLD) method. This substrate processing apparatus 1 includes a processing unit 10, a rotation driving device 20, a lifter unit 30, and a control unit 90.

[0011] The processing unit 10 executes a film forming process for forming a film on the substrate W. The processing unit 10 includes a processing container 11, a gas introduction unit 12, a gas exhaust unit 13, a transfer port 14, a heating unit 15, and a cooling unit 16.

[0012] The processing container 11 is a vacuum container capable of reducing the internal space pressure to switch to a vacuum atmosphere. The processing container 11 is formed in a flat housing having a substantially circular planar shape and can accommodate a plurality of substrates W in the internal space. The substrate W may be, for example, a semiconductor wafer. The processing container 11 includes a main body 111, a top plate 112, a side wall body 113, and a bottom plate 114 (FIG. 1). The main body 111 has a cylindrical shape. The top plate 112 is detachably attached to the upper surface of the main body 111. The main body 111 and the top plate 112 are hermetically adhered by a seal portion 115. The side wall body 113 has a cylindrical shape and is hermetically connected to the lower surface of the main body 111. The bottom plate 114 is hermetically connected to the bottom surface of the side wall body 113.

[0013] The gas introduction unit 12 includes a raw material gas nozzle 121, a reaction gas nozzle 122, and separation gas pipes 123 and 124 (FIG. 2). The raw material gas nozzle 121, the reaction gas nozzle 122, and the separation gas pipes 123 and 124 are arranged at intervals along the circumferential direction of the processing container 11 (the direction indicated by the arrow A in FIG. 2) above a rotating table 21 described later. In the illustrated example, the separation gas pipe 123, the raw material gas nozzle 121, the separation gas pipe 124, and the reaction gas nozzle 122 are arranged in this order clockwise (the rotation direction of the rotating table 21) from the transfer port 14.

[0014] Each of the raw material gas nozzle 121 and the reaction gas nozzle 122 has gas introduction ports 121p and 122p (FIG. 2) for introducing various gases at the base end. The gas introduction ports 121p and 122p are fixed to the side wall of the main body 111 and protrude outside the main body 111. The raw material gas nozzle 121 and the reaction gas nozzle 122 are inserted into the processing container 11 from the side wall of the main body 111 and extend radially inward of the main body 111. The raw material gas nozzle 121 and the reaction gas nozzle 122 are formed of, for example, quartz and are arranged parallel to the rotating table 21.

[0015] The raw material gas nozzle 121 is connected to a raw material gas supply source (not shown) via pipes and flow controllers (not shown). As the raw material gas, for example, a silicon-containing gas or a metal-containing gas can be used. The raw material gas nozzle 121 has a plurality of discharge holes (not shown) that open toward the rotary table 21, which are arranged at intervals along the axial direction of the raw material gas nozzle 121. The lower region of the raw material gas nozzle 121 becomes a raw material gas adsorption region P1 for adsorbing the raw material gas to the substrate W.

[0016] The reaction gas nozzle 122 is connected to a reaction gas supply source (not shown) via pipes and flow controllers (not shown). As the reaction gas, for example, an oxidation gas or a nitriding gas can be used. The reaction gas nozzle 122 has a plurality of discharge holes (not shown) that open toward the rotary table 21, which are arranged at intervals along the axial direction of the reaction gas nozzle 122. The lower region of the reaction gas nozzle 122 becomes a reaction gas supply region P2 for oxidizing or nitriding the raw material gas adsorbed to the substrate W in the raw material gas adsorption region P1. In the present embodiment, the processing gas for processing the substrate W corresponds to the above raw material gas and reaction gas.

[0017] Each of the separation gas pipes 123 and 124 is connected to a separation gas supply source 79 via a flow controller 77, a valve 78, etc. (see FIG. 5 in both cases). As the separation gas, for example, an inert gas such as argon (Ar) gas or nitrogen (N2) gas can be used. As shown in FIG. 2, the separation gas pipes 123 and 124 supply separation gas to two (a plurality of) separation regions D set between the raw material gas adsorption region P1 and the reaction gas supply region P2 in the processing vessel 11, respectively.

[0018] In the processing container 11, two (or more) gas supply structures 60 are provided to form two separation regions D. Each gas supply structure 60 is installed on the top plate 112 above the rotary table 21. The separation region D has a fan shape with an arc-shaped cut at the top in plan view. The inner arc is arranged along the protruding portion 18 fixed to the top plate 112, and the outer arc is arranged along the side wall of the processing container 11. And the separation gas pipes 123 and 124 are respectively connected to the introduction parts 70 protruding above each gas supply structure 60. Each of these gas supply structures 60 will be described in detail later.

[0019] The gas exhaust part 13 includes a first exhaust port 131 and a second exhaust port 132 (Fig. 2). The first exhaust port 131 is formed at the bottom of the first exhaust region E1 communicating with the raw material gas adsorption region P1. The second exhaust port 132 is formed at the bottom of the second exhaust region E2 communicating with the reaction gas supply region P2. The first exhaust port 131 and the second exhaust port 132 are connected to an exhaust device (not shown) via an exhaust pipe not shown.

[0020] The transfer port 14 is provided on the side wall of the main body 111 (Fig. 2). Near the transfer port 14, the substrate W is transferred between the rotary table 21 in the processing container 11 and the transfer device 14a outside the processing container 11. The transfer port 14 is opened and closed by a gate valve not shown.

[0021] The heating part 15 includes a fixed shaft 151, a heater support part 152, and a heater 153 (Fig. 1).

[0022] The fixed shaft 151 has a cylindrical shape with the center of the processing container 11 as the central axis. The fixed shaft 151 penetrates the bottom plate 114 of the processing container 11 inside the rotating shaft 23 of the rotation driving device 20 described later.

[0023] The heater support part 152 is fixed to the upper part of the fixed shaft 151 and has a disk shape. The heater support part 152 supports the heater 153.

[0024] The heater 153 is provided on the upper surface of the heater support portion 152. In addition to the upper surface of the heater support portion 152, the heater 153 may be provided on the main body 111. The heater 153 generates heat when power is supplied from a power source (not shown) and heats the substrate W. Further, the heater 153 may be provided with a shielding plate on its upper surface (the surface facing the rotary table 21) to prevent the heater 153 from being exposed to the processing gas.

[0025] The cooling unit 16 includes fluid flow paths 161a to 164a, chiller units 161b to 164b, inlet pipes 161c to 164c, and outlet pipes 161d to 164d (FIG. 1). The fluid flow paths 161a to 164a are formed inside the main body 111, the top plate 112, the bottom plate 114, and the heater support portion 152, respectively. The chiller units 161b to 164b output temperature-controlled fluid. The temperature-controlled fluid output from the chiller units 161b to 164b flows through the inlet pipes 161c to 164c, the fluid flow paths 161a to 164a, and the outlet pipes 161d to 164d in this order and circulates. Thereby, the temperatures of the main body 111, the top plate 112, the bottom plate 114, and the heater support portion 152 are adjusted. As the temperature-controlled fluid, for example, a fluorine-based fluid such as Galden (registered trademark) or water can be used.

[0026] The rotary drive device 20 includes a rotary table 21, a housing box 22, a rotary shaft 23, a revolution motor 24, and an outer cylinder 25.

[0027] The rotary table 21 is provided in the processing container 11 and has a rotation center at the center of the processing container 11. The rotary table 21 has, for example, a disc shape and is formed of quartz. A plurality (for example, five) of mounting tables 211 are provided on the upper surface of the rotary table 21 along the rotation direction (circumferential direction). The rotary table 21 is connected to the housing box 22 via a connection portion 214 (FIG. 3).

[0028] Each mounting table 211 has a disk shape slightly larger than the substrate W and is formed of, for example, quartz. On the upper surface of each mounting table 211, a mounting surface 211s for mounting the substrate W is formed. Each mounting table 211 is connected to a rotation motor 213 via a rotation shaft 212 and is configured to be rotatable with respect to the rotation table 21 (FIG. 1).

[0029] The rotation shaft 212 connects the lower surface of the mounting table 211 and the rotation motor 213 housed in the housing box 22, and transmits the power of the rotation motor 213 to the mounting table 211. The rotation shaft 212 is configured to be rotatable about the center of the mounting table 211 as a rotation center. The rotation shaft 212 is provided so as to penetrate the ceiling portion 222 of the housing box 22 and the rotation table 21. A seal portion 263 is provided in the vicinity of the penetration portion of the ceiling portion 222 of the housing box 22, and the airtight state inside the housing box 22 is maintained. The seal portion 263 includes, for example, a magnetic fluid seal.

[0030] The rotation motor 213 rotates the substrate W around its center by rotating the mounting table 211 relative to the rotation table 21 via the rotation shaft 212. It is preferable to apply, for example, a servo motor as the rotation motor 213.

[0031] The connection portion 214 connects the lower surface of the rotation table 21 and the upper surface of the housing box 22 (FIG. 3). A plurality of connection portions 214 are provided along the circumferential direction of the rotation table 21.

[0032] The housing box 22 is provided below the rotation table 21 in the processing container 11. The housing box 22 is connected to the rotation table 21 via the connection portion 214 and rotates integrally with the rotation table 21. The housing box 22 may be configured to be movable up and down in the processing container 11 by a lifting mechanism (not shown). The housing box 22 has a main body portion 221 and a ceiling portion 222.

[0033] The main body portion 221 is formed in a concave shape in a longitudinal sectional view and is formed in a ring shape along the rotation direction of the rotation table 21 (FIG. 1).

[0034] The ceiling portion 222 is provided on the upper surface of the main body portion 221 so as to cover the opening of the main body portion 221. In this way, the main body portion 221 and the ceiling portion 222 form a rotating container portion 223 that is isolated from the inside of the processing vessel 11.

[0035] The rotating container 223 is formed in a rectangular shape in a vertical cross section, and has a ring shape along the rotation direction of the turntable 21. The rotating container 223 contains a rotation motor 213 (rotation source). The main body 221 is formed with a communication passage 224 that connects the rotating container 223 to the outside of the substrate processing apparatus 1. This allows air to be introduced into the rotating container 223 from the outside of the substrate processing apparatus 1, and the inside of the rotating container 223 is cooled and maintained at atmospheric pressure. In order to rotatably dispose the rotating container 223, the processing vessel 11 has a rotation source housing space 19 surrounded by a side wall body 113, a bottom plate 114, and a heating unit 15.

[0036] The rotating shaft 23 is fixed to the lower part of the storage box 22. The rotating shaft 23 is provided penetrating the bottom plate 114 of the processing vessel 11. The rotating shaft 23 transmits the power of the revolution motor 24 to the rotating table 21 and the storage box 22, and rotates the rotating table 21 and the storage box 22 together. A seal unit 154 is provided between the outer wall of the fixed shaft 151 and the inner wall of the rotating shaft 23 of the rotation drive device 20. As a result, the rotating shaft 23 rotates relative to the fixed shaft 151 while maintaining the airtight state inside the processing vessel 11. For example, a magnetic fluid seal can be used as the seal unit 154.

[0037] An outer cylinder 25 of the rotation drive device 20 is connected to the lower surface of the center side of the bottom plate 114 of the processing vessel 11. The outer cylinder 25 supports the processing vessel 11 together with a fixed shaft 151 of the processing vessel 11. A seal unit 116 is provided between the rotating shaft 23 and the outer cylinder 25 to maintain an airtight state inside the processing vessel 11. For the seal unit 116, for example, a magnetic fluid seal can be used.

[0038] Inside the rotating shaft 23, a passage 231 is formed. The passage 231 is connected to the communication passage 224 of the storage box 22 and functions as a fluid flow path for introducing the atmosphere into the storage box 22. Further, the passage 231 also functions as a wiring duct for introducing power lines and signal lines for driving the rotation motor 213 into the storage box 22. The passage 231 is provided, for example, in the same number as the rotation motor 213.

[0039] Also, as shown in FIG. 1, when the transfer device 14a (FIG. 2) loads and unloads the substrate W onto and from the mounting table 211, the lifter unit 30 raises and lowers a plurality (three in this embodiment) of lift pins 31 to receive and transfer the substrate W with the transfer device 14a. The substrate processing apparatus 1 installs the lifter unit 30 vertically below the mounting table facing position adjacent to the transfer port 14. The lifter unit 30 includes a plurality (three) of upper structure parts 40 each having a plurality of lift pins 31, and one lower operation part 50 that raises and lowers the plurality of lift pins 31 simultaneously, in the processing container 11.

[0040] Each upper structure part 40 is installed so as to penetrate the heater support part 152 and the heater 153, and accommodates the lift pin 31 in a displaceable manner. The lower operation part 50 is attached to the lower surface of the bottom plate 114 of the processing container 11. The lower operation part 50 has a plurality (three) of plungers 51 that are displaced along the vertical direction and press the lower ends 32 of the respective lift pins 31. That is, the lifter unit 30 has a two-stage structure in which, as members that operate, a plurality of lift pins 31 that directly contact the substrate W and a plurality of plungers 51 that indirectly raise and lower the substrate W via the lift pins 31 are vertically separated.

[0041] In addition to each plunger 51, the lower operation part 50 includes a case 52 and a plunger drive part 53. The case 52 is fixed to the bottom plate 114 on the side of the outer cylinder 25 and is formed in an appropriate shape capable of accommodating each component of the lower operation part 50. The plunger drive part 53 operates based on the control of the control part 90 to raise and lower each plunger 51 along the vertical direction.

[0042] Each plunger 51 is formed in an elongated solid rod shape and extends in the vertical direction. At a position on the bottom plate 114 facing each plunger 51, a bottom plate side through hole 114a for passing each plunger 51 is formed. Also, at a position on the housing box 22 near the rotation shaft 23 and facing each plunger 51, a box side through hole 225 that penetrates the housing box 22 and allows each plunger 51 to pass through is formed.

[0043] Each plunger 51 waits in a state where its upper end portion slightly protrudes from the bottom plate side through hole 114a in the non-operating state of the lift pin 31. Then, each plunger 51 rises when receiving or delivering the substrate W and moves within the rotation source accommodation space 19. Each plunger 51 passes by the side of the housing box 22 or through the box side through hole 225 and contacts the lift pin 31 of each upper structure portion 40 to push up the lift pin 31.

[0044] A plurality (three) of upper structure portions 40 are provided at positions radially spaced from the rotation axis 212 and along the circumferential direction of the mounting table 211. The upper structure portion 40 has a housing portion 41 for housing the lift pin 31, and this housing portion 41 supports the lift pin 31 so that it cannot fall off downward in the vertical direction. The mounting table 211 is provided with a plurality (three) of through holes 211a through which each lift pin 31 can pass corresponding to the arrangement positions of the respective upper structure portions 40 (see also FIG. 2).

[0045] The lift pin 31 is a cylindrical member extending linearly, and its lower end is located below the lower surface of the heater support portion 152. When the plunger 51 that has risen by the lower operation portion 50 contacts the lower end of the lift pin 31 and pushes up the lower end 32, the entire lift pin 31 can be lifted. The upper end of the lift pin 31 moves above the heater 153 in the vertical direction and further protrudes above the upper surface of the mounting table 211 through the through hole 211a of the mounting table 211.

[0046] [Regarding the gas supply structure 60 in the separation region D] Next, each gas supply structure 60 of the substrate processing apparatus 1 according to the embodiment will be described with reference to FIGS. 2, 4, and 5. FIG. 4 is a view of the gas supply structure 60 in the separation region D as seen from the lower surface side. Note that the gas supply structure 60 in FIG. 4 is for the separation region D to which the separation gas pipe 123 is connected, but it goes without saying that the gas supply structure 60 to which the separation gas pipe 124 is connected can be configured in the same manner. FIG. 5 is a cross-sectional view of the rotary table 21 and the gas supply structure 60 corresponding to the V-V line in FIG. 4.

[0047] Each gas supply structure 60 is installed in a part of the entire circumference of the processing container 11 (and the rotary table 21) to form a separation region D. The separation region D partitions the adjacent raw material gas adsorption region P1 and reaction gas supply region P2. The range of one separation region D in the circumferential direction of the processing container 11 may be set, for example, in the range of 30° to 90°. Each gas supply structure 60 regulates the mixing of the raw material gas supplied to the raw material gas adsorption region P1 and the reaction gas supplied to the reaction gas supply region P2 by supplying a separation gas to the separation region D.

[0048] Specifically, each gas supply structure 60 has a discharge part 61 that actually discharges the separation gas, and two peripheral block parts 69 respectively arranged on both circumferential sides (adjacent positions in the circumferential direction of the discharge part 61) of the discharge part 61. Each peripheral block part 69 is fixed to the lower surface of the top plate 112, reducing the gap 69C between the lower surface of the peripheral block part 69 and the upper surface of the rotary table 21. On the other hand, the discharge part 61 is configured to be displaceable relative to the peripheral block part 69 by a displacement mechanism 80 (FIG. 6) described later.

[0049] Specifically, the discharge part 61 is located in the circumferential middle of the fan-shaped gas supply structure 60. The discharge part 61 has a fan-shaped fan part 62 smaller than the entire gas supply structure 60 that expands radially outward from the central inner arc, and a convex part 63 that projects radially outward short from the outer edge in the circumferential middle of the fan part 62. The fan part 62 and the convex part 63 are integrally formed with each other, and their lower surfaces are continuously flat.

[0050] The fan portion 62 and the convex portion 63 divide a pair of peripheral block portions 69 and are formed so as to be able to discharge the separation gas evenly along the radial direction. A plurality of gas discharge ports 64 are provided on the lower surfaces of the fan portion 62 and the convex portion 63. Each gas discharge port 64 is arranged in two rows along the radial direction and forms an endless (flat elliptical shape) arrangement that is arranged in a semi-circular shape on the inner and outer sides in the radial direction. Each gas discharge port 64 extends in the thickness direction of the discharge portion 61 and communicates with a gas diffusion chamber 65 (FIG. 5) formed inside the discharge portion 61. Note that the arrangement of each gas discharge port 64 is not particularly limited, and for example, it may be formed in a matrix shape on the lower surfaces of the fan portion 62 and the convex portion 63.

[0051] A gap 61C is formed between the upper surface of the rotary table 21 and the lower surface of the discharge portion 61. The separation gas supplied from each gas discharge port 64 to the gap 61C moves to both circumferential sides and the outer side in the radial direction of the separation region D while filling the gap 61C, thereby blocking the raw material gas and the reaction gas. Note that the vertical position of the lower surface of the discharge portion 61 (the fan portion 62 and the convex portion 63) coincides with the vertical position of the lower surface of each peripheral block portion 69 or is arranged at a position higher than the vertical position of the lower surface of each peripheral block portion 69.

[0052] Further, the gas supply structure 60 includes an introduction portion 70 on the upper surface side of the discharge portion 61 for introducing the separation gas into the gas diffusion chamber 65 and each gas discharge port 64. The introduction portion 70 is formed in a columnar shape extending in the vertical direction and is connected to the upper surface of the discharge portion 61. The introduction portion 70 includes a columnar main body portion 71 that penetrates the top plate 112 and protrudes above the processing container 11, and a manifold portion 75 that is attached to the protruding portion of the columnar main body portion 71 and has a plurality (three) of ports 76.

[0053] The columnar main body 71 is integrally formed with the discharge part 61 and extends sufficiently longer than the thickness of the top plate 112 along the vertical direction. Inside the columnar main body 71 (and the discharge part 61), a gas supply passage 72 communicating with the gas diffusion chamber 65 of the discharge part 61 is formed. The gas supply passage 72 also extends in the vertical direction within the manifold part 75, bends horizontally at an appropriate height position, and communicates with a gas introduction port 761 which is one of the three ports 76.

[0054] The manifold part 75 has a cylindrical body 751 fixed to the upper part of the columnar main body 71, a lid body 752 closing the upper end of the cylindrical body 751, and a cover body 753 covering the outside of the columnar main body 71 below the cylindrical body 751. The cylindrical body 751 is airtightly fixed to the outer peripheral surface of the columnar main body 71. In the fixed state of the manifold part 75, the gas supply passage 72 of the columnar main body 71 and the detection passages 673 and 683 described later communicate with the respective ports 76 of the cylindrical body 751. Also, the lid body 752 airtightly closes the upper end opening of the cylindrical body 751 through appropriate fixing means such as screwing and welding.

[0055] A separation gas pipe 123 (or separation gas pipe 124) is connected to the gas introduction port 761 among the three ports 76 of the manifold part 75. At an appropriate position of this separation gas pipe 123, a flow controller 77, a valve 78, and a supply source 79 of the separation gas are installed. The flow controller 77 adjusts the flow rate of the separation gas supplied from the supply source 79 to the separation region D. The valve 78 switches the supply and supply stop of the separation gas by opening and closing the flow path of the separation gas pipe 123.

[0056] In addition, the gas supply structure 60 includes one or more pressure detection units 66 that detect the static pressure of a gap 61C formed between the upper surface of the rotary table 21 (the surface of the substrate W placed on each mounting table 211) and the lower surface of the discharge unit 61. In the gas supply structure 60 according to the embodiment, the pressure detection units 66 are installed at two locations, namely, the inner side and the outer side in the radial direction of the fan part 62. Hereinafter, the pressure detection unit 66 located on the inner side in the radial direction is referred to as the inner pressure detection unit 67, and the pressure detection unit 66 located on the outer side in the radial direction is referred to as the outer pressure detection unit 68. Note that the pressure detection unit 66 may be configured to detect the static pressure at one location, or may be configured to detect the static pressure at three or more locations.

[0057] The inner pressure detection unit 67 has a detection port 671 on the lower surface of the discharge unit 61 through which a part of the separated gas can flow in. Further, the inner pressure detection unit 67 includes a horizontal passage 672 communicating with the detection port 671 and a detection passage 673 extending in the columnar main body part 71 of the introduction unit 70 and communicating with the horizontal passage 672. The detection passage 673 also extends vertically in the manifold part 75, bends at an appropriate height position, and communicates with one of the three ports 76, namely, the inner pressure detection port 762. A pressure sensor 73 for detecting the pressure on the inner side in the radial direction of the gap 61C is connected to the inner pressure detection port 762.

[0058] Similarly, the outer pressure detection unit 68 has a detection port 681 on the lower surface of the discharge unit 61 through which a part of the separated gas can flow in. Further, the outer pressure detection unit 68 includes a horizontal passage 682 communicating with the detection port 681 and a detection passage 683 extending in the columnar main body part 71 of the introduction unit 70 and communicating with the horizontal passage 682. The detection passage 683 also extends vertically in the manifold part 75, bends at an appropriate height position, and communicates with one of the three ports 76, namely, the outer pressure detection port 763. A pressure sensor 74 for detecting the pressure on the outer side in the radial direction of the gap 61C is connected to the outer pressure detection port 763.

[0059] As shown in Fig. 4, the detection port 671 of the inner pressure detection unit 67 is located at an adjacent position to the gas discharge port 64 on the inner side in the radial direction on the lower surface of the discharge unit 61. The detection port 681 of the outer pressure detection unit 68 is located at an adjacent position to the gas discharge port 64 on the outer side in the radial direction (near the convex portion 63 of the fan portion 62) on the lower surface of the discharge unit 61. For example, the detection port 671 and the detection port 681 are arranged so as to sandwich each of the two rows of gas discharge ports 64 therebetween.

[0060] The pair of peripheral block portions 69 has an inner normal line portion 691 adjacent to the fan portion 62 of the discharge unit 61 in the circumferential direction, and an outer arc portion 692 connected to the outside in the radial direction of the inner normal line portion 691 and adjacent to the convex portion 63 of the discharge unit 61 in the circumferential direction. The inner normal line portion 691 and the outer arc portion 692 are integrally formed with each other. The gas supply structure 60 has the outer arc portion 692 with a long circumferential length in the circumferential direction, so that it is possible to increase the pressure at the outer peripheral portion in the radial direction of the separation region D where the pressure tends to be low due to the outflow of the separated gas.

[0061] The discharge unit 61 is configured to be relatively displaceable with respect to each peripheral block portion 69 fixed to the top plate 112 by a displacement mechanism 80. Note that the "displacement" of the discharge unit 61 includes concepts such as changing the posture, changing the angle, etc. in addition to the discharge unit 61 moving and changing its position. Next, this displacement mechanism 80 will be described with reference to Fig. 6. Fig. 6 is a perspective view showing the displacement mechanism 80 for displacing the discharge unit 61.

[0062] Specifically, the displacement mechanism 80 includes a tilt adjustment unit 81 capable of adjusting the tilt angle of the discharge unit 61, and a vertical adjustment unit 86 capable of adjusting the position of the discharge unit 61 in the vertical direction (vertical direction). The displacement mechanism 80 according to the embodiment holds the discharge unit 61 and the introduction unit 70 by the tilt adjustment unit 81, and holds the tilt adjustment unit 81 by the vertical adjustment unit 86. Thereby, the vertical adjustment unit 86 raises and lowers the discharge unit 61 and the tilt adjustment unit 81 integrally. However, the displacement mechanism 80 is not limited to this configuration. For example, a configuration in which the discharge unit 61 is held by the vertical adjustment unit 86 and the vertical adjustment unit 86 is held by the tilt adjustment unit 81 may also be used.

[0063] The tilt adjustment unit 81 includes a connecting member 82 connected to the introduction unit 70, a support member 83 that supports the connecting member 82, a tilt driving unit 84 fixed to the support member 83, and a drive transmission unit 85 that transmits the driving force of the tilt driving unit 84 to the connecting member 82.

[0064] The connecting member 82 is constituted by, for example, a plate body having sufficient rigidity, and fixes a lid body 752 that constitutes the upper end surface of the manifold portion 75 through appropriate fixing means such as screwing. Note that the object held by the connecting member 82 is not particularly limited, and may be any of the configurations of the introduction unit 70.

[0065] The connecting member 82 includes a fixing portion 821 fixed to the upper end surface of the lid body 752, and a pair of extending portions 822 and 823 that extend in opposite directions from the fixing portion. The fixing portion 821 and the pair of extending portions 822 and 823 are continuously connected. The extending portion 822 is rotatably connected to the support member 83. That is, the tilt adjustment unit 81 can change the angle of the entire connecting member 82 with the connection point between the extending portion 822 and the support member 83 as a reference point. On the other hand, a movable body 852 of the drive transmission unit 85 is fixed to the extending portion 823. The connecting member 82 can be displaced vertically integrally with the movable body 852. That is, the connecting member 82 adjusts the angle of the connected introduction unit 70 (manifold portion 75) by the vertical displacement of the opposite extending portion 823 with the connection point between the extending portion 822 and the support member 83 as a reference point.

[0066] The fixing portion 821 and the pair of extending portions 822 and 823 extend parallel to the radial direction of the processing container 11. Therefore, when the extending portion 823 is displaced vertically with the extending portion 822 as a reference point, the tilt angle (pitch angle) along the radial direction of the supported introduction unit 70 and discharge unit 61 can be changed. In other words, the discharge unit 61 has its inclination posture along the radial direction adjusted by the tilt adjustment unit 81.

[0067] The support member 83 of the tilt adjustment unit 81 is held by the vertical adjustment unit 86 so as to extend in the horizontal direction, and supports the connecting member 82 and the tilt drive unit 84. The support member 83 has a horizontally extending portion 831, and a protruding piece 832 that protrudes downward in the vertical direction from one end of the horizontally extending portion 831. The horizontally extending portion 831 supports the tilt drive unit 84 at the other end opposite to the protruding piece 832. The protruding piece 832 rotatably supports the extending portion 822 of the connecting member 82 described above at the lower protruding end.

[0068] As the tilt drive unit 84, for example, a drive source such as a servo motor is applied, and it is connected to the control unit 90 via a driver (not shown). The tilt drive unit 84 is supported by the support member 83 via a pedestal or the like so that the rotation axis faces downward.

[0069] The drive transmission unit 85 transmits the driving force of the tilt drive unit 84 to the extending portion 823 of the connecting member 82, and raises and lowers the extending portion 823 vertically. For example, when the tilt drive unit 84 is a servo motor, as the drive transmission unit 85, a ball screw mechanism or a gear mechanism can be adopted. FIG. 6 shows the drive transmission unit 85 adopting a ball screw mechanism. In this case, the drive transmission unit 85 has a screw shaft 851 that rotates by the tilt drive unit 84, and a movable body 852 that is screwed onto the screw shaft 851. The movable body 852 fixes the extending portion 823 and is displaced vertically as the screw shaft 851 rotates. Thereby, the tilt adjustment unit 81 can adjust the connecting member 82 to an appropriate angle.

[0070] On the other hand, the vertical adjustment unit 86 is fixed to an appropriate configuration of the processing container 11 via a column portion (not shown), and supports the tilt adjustment unit 81 so as to be displaceable in the vertical direction. The vertical adjustment unit 86 includes a pair of guide rails 87 fixed to the column portion, a lifting drive unit 88 supported by each guide rail 87, and a drive transmission unit 89 that holds the tilt adjustment unit 81 and transmits the driving force of the lifting drive unit 88.

[0071] A pair of guide rails 87 are fixed to the column portion over the lower end portion and the middle portion, and extend linearly in the vertical direction. The pair of guide rails 87 support a lifting drive unit 88 at their upper ends.

[0072] Similar to the tilt drive unit 84, a drive source such as a servo motor is applied to the lifting drive unit 88, and it is connected to a control unit 90 via a driver (not shown). The lifting drive unit 88 is supported via a pedestal or the like so that the rotation axis faces downward.

[0073] The drive transmission unit 89 transmits the driving force of the lifting drive unit 88 to the support member 83 of the tilt adjustment unit 81 to move the support member 83 up and down. For example, when the lifting drive unit 88 is a servo motor, as the drive transmission unit 89, a ball screw mechanism or a gear mechanism can be employed in the same manner as the drive transmission unit 85. For example, the drive transmission unit 89 has a screw shaft 891 rotated by the lifting drive unit 88 and a movable part 892 screwed onto the screw shaft 891. The movable part 892 fixes the support member 83 and is displaced up and down as the screw shaft 891 rotates. Thereby, the vertical adjustment unit 86 can adjust the support member 83 (that is, the tilt adjustment unit 81) to an appropriate vertical position.

[0074] Returning to FIG. 1, the control unit 90 of the substrate processing apparatus 1 controls each part of the substrate processing apparatus 1. The control unit 90 includes a control main body 91 and a user interface 95. The control main body 91 is a computer having one or more processors 92, a memory 93, an input / output interface (not shown), and a communication interface. The one or more processors 92 are a combination of one or more of a CPU (Central Processing Unit), a GPU (Graphics Processing Unit), an ASIC (Application Specific Integrated Circuit), an FPGA (Field-Programmable Gate Array), a circuit composed of a plurality of discrete semiconductors, etc., and execute the programs stored in the memory 93. The memory 93 includes a main storage device composed of a semiconductor memory or the like, and an auxiliary storage device composed of a disk, a semiconductor memory (flash memory), or the like.

[0075] Further, the user interface 95 is connected to the input / output interface of the control main body 91. The user interface 95 is not particularly limited, and examples thereof include a touch panel, a monitor, a keyboard, a mouse, and the like.

[0076] The substrate processing apparatus 1 according to the embodiment is basically configured as described above, and its operation will be described below.

[0077] Under the control of the control unit 90, the substrate processing apparatus 1 executes substrate processing such as film formation processing on the substrate W. As shown in FIG. 1, before the substrate processing is performed, the substrate processing apparatus 1 opens the gate valve, and the substrate W is carried into the processing container 11 by the transfer device 14a (FIG. 2) through the transfer port 14 and received by the lifter unit 30, so that the substrate W is placed on the mounting table 211 of the rotary table 21. The substrate processing apparatus 1 repeats this operation multiple times to place the substrate W on all the mounting tables 211.

[0078] Thereafter, the substrate processing apparatus 1 controls the gas exhaust unit 13 to exhaust the gas in the processing chamber 11, thereby adjusting the pressure in the processing chamber 11 to the target pressure. Further, the substrate processing apparatus 1 performs temperature adjustment by the heater 153 so that each substrate W reaches the target temperature. Furthermore, the substrate processing apparatus 1 rotates (revolves) the rotary table 21 and rotates (rotates) each mounting table 211.

[0079] In this state, as shown in FIG. 2, the substrate processing apparatus 1 supplies the source gas to the source gas adsorption region P1 through the source gas nozzle 121 of the gas introduction unit 12. Thereby, in the source gas adsorption region P1, the source gas is adsorbed on the surface of the substrate W. Further, the substrate processing apparatus 1 supplies the reaction gas to the reaction gas supply region P2 through the reaction gas nozzle 122 of the gas introduction unit 12. Thereby, in the reaction gas supply region P2, the source gas adhering to the surface of the substrate W reacts with the reaction gas, and a desired film can be formed.

[0080] Further, in the substrate processing, the substrate processing apparatus 1 supplies the separation gas to the two separation regions D through the separation gas pipes 123 and 124, thereby separating the source gas adsorption region P1 and the reaction gas supply region P2.

[0081] Specifically, as shown in FIG. 5, in the separation region D, the separation gas flows into the gas diffusion chamber 65 of the discharge unit 61 through the gas introduction port 761 and the gas supply path 72 of the introduction unit 70. The separation gas diffuses along the radial direction in the gas diffusion chamber 65 (see also FIG. 4) and is discharged from each gas discharge port 64 into the space of the processing chamber 11. When the separation gas is discharged into the gap 61C between the lower surface of the discharge unit 61 and the upper surface of the rotary table 21 (including the substrate W), it moves toward the circumferential direction and the outer side in the radial direction in the processing chamber 11.

[0082] Here, between the lower surfaces of the pair of peripheral block portions 69 and the upper surface of the rotary table 21, a gap 69C with an interval d that is mutually close is formed. For this reason, the separation gas that has moved from the gap 61C to the gap 69C increases the pressure in the gap 69C, thereby restricting the raw material gas and the reaction gas from entering the separation region D. In particular, the lower surface of the peripheral block portion 69 is sufficiently close to the rotary table 21 at the adjacent position of the discharge portion 61 and is fixed to the top plate 112, so that the raw material gas and the reaction gas can be stably prevented from heading towards the discharge portion 61. The gas supply structure 60 separates the discharge portion 61 and the top plate 112 from each other in order to displace the discharge portion 61, and a displacement allowance space is formed therebetween. Each peripheral block portion 69 can avoid the raw material gas and the reaction gas from flowing into and mixing (reacting) with this displacement allowance space.

[0083] Also, as shown in FIG. 4, each gas discharge port 64 arranged in the radial direction can uniformly supply the separation gas to substantially the entire radial direction of the separation region D. Thereby, the raw material gas and the reaction gas can be more reliably prevented from moving in the circumferential direction. In particular, the outer arc portion 692 of the peripheral block portion 69 can increase the pressure of the separation gas on the outer side in the radial direction where the pressure is likely to be low, and it becomes possible to promote the pressure uniformity of the entire separation region D.

[0084] Then, the control unit 90 detects the static pressure in the separation region D by the pressure detection unit 66 of the separation region D (gas supply structure 60) during substrate processing or cleaning processing, etc., and receives this detection information. Thereby, the control unit 90 can monitor the actual static pressure applied to the separation region D during substrate processing or cleaning processing, etc.

[0085] The pressure detection unit 66 includes an inner pressure detection unit 67 and an outer pressure detection unit 68, and thereby detects the static pressures on the inner side and the outer side in the radial direction of the separation region D, respectively. As a result, the control unit 90 can estimate the distribution of the static pressure in the radial direction of the separation region D. For example, the control unit 90 can recognize the deformation (chipping due to etching) of the rotary table 21 associated with the cleaning process or the like based on the change in the pressure difference between the inner side and the outer side in the radial direction of the separation region D.

[0086] Hereinafter, with reference to FIGS. 7(A) to 7(D), a pressure adjustment method associated with the deformation of the rotary table 21 will be described. FIG. 7(A) is a first side view schematically showing the operation of the gas supply structure 60 along the radial direction. FIG. 7(B) is a second side view schematically showing the operation of the gas supply structure 60 along the radial direction. FIG. 7(C) is a third side view schematically showing the operation of the gas supply structure 60 along the radial direction. FIG. 7(D) is a fourth side view schematically showing the operation of the gas supply structure 60 along the radial direction.

[0087] First, with reference to FIGS. 7(A) and 7(B), the mechanism of the deformation of the rotary table 21 will be described. As shown in FIG. 7(A), the substrate processing apparatus 1 is basically provided such that the rotary table 21 (the mounting surfaces 211s of the respective mounting tables 211) is horizontal when the product is shipped or when the factory is installed. For this reason, the substrate processing apparatus 1 rotates each substrate W while keeping the surface of each substrate W mounted on each mounting table 211 horizontal, and performs substrate processing.

[0088] Then, after the substrate processing apparatus 1 repeats the substrate processing a plurality of times, a cleaning process is performed to remove deposits and the like deposited on the rotary table 21. For example, in the cleaning process, an etching gas is supplied into the processing chamber 11 by the gas introduction unit 12, and the etching gas is supplied by a plasma processing unit (not shown) provided in the reaction gas supply region P2 or the like, thereby removing the deposits on each component in the processing chamber 11. As a result, in the cleaning process, the deposits on the rotary table 21 are removed.

[0089] However, during this cleaning process, the rotary table 21 itself is also etched. For example, in the processing chamber 11, since the etching gas for the cleaning process easily moves radially outward, the rotary table 21 on the radially outer side is more easily etched than the rotary table 21 on the radially inner side. When the cleaning process is repeated a plurality of times, as shown in FIG. 7(B), the mounting surface 211s of the rotary table 21 (each mounting stage 211) has a shape that slopes downward as it goes radially outward. Therefore, if the lower surface of the discharge unit 61 remains parallel in the horizontal direction, the gap 61C between the rotary table 21 and the discharge unit 61 is narrow on the radially inner side and wide on the radially outer side.

[0090] When the separation gas is supplied to the gap 61C in this state, the pressure distribution in the gap 61C between the rotary table 21 and the discharge unit 61 becomes non-uniform. For example, the pressure in the gap 61C where the rotary table 21 is inclined radially outward and downward is greater on the radially inner side and smaller on the radially outer side. When the pressure distribution becomes non-uniform in the separation region D, the distribution of the gas flowing into the raw material gas adsorption region P1 and the reaction gas supply region P2 also changes, which also affects the film formation rate and film quality in the film formation process (substrate processing).

[0091] Therefore, the substrate processing apparatus 1 according to the embodiment displaces the discharge unit 61 of the gas supply structure 60 based on the static pressure detected by the pressure detection unit 66 in the separation region D. Thereby, the substrate processing apparatus 1 can appropriately adjust the gap 61C between the upper surface of the rotary table 21 and the lower surface of the discharge unit 61, and can promote the uniformization of the pressure distribution in the separation region D.

[0092] Specifically, as shown in FIGS. 7(C) and 7(D), the gas supply structure 60 inclines and raises / lowers the lower surface of the discharge portion 61 by the displacement mechanism 80. As an example, the displacement mechanism 80 first operates the tilt adjustment portion 81 to adjust the tilt posture of the discharge portion 61. The tilt adjustment portion 81 can tilt the tilt angle (pitch angle) of the discharge portion 61 along the radial direction of the processing container 11 under the drive of the tilt drive portion 84 as described above. Therefore, for example, the tilt adjustment portion 81 adjusts the tilt angle of the discharge portion 61 so that the lower surface of the discharge portion 61 and the upper surface of the rotary table 21 are parallel. Thereby, the substrate processing apparatus 1 can make the interval d between the lower surface of the discharge portion 61 and the upper surface of the rotary table 21 (gap 61C) constant along the radial direction.

[0093] Next, as shown in FIG. 7(D), the displacement mechanism 80 operates the vertical adjustment portion 86 to adjust the vertical position of the discharge portion 61. The vertical adjustment portion 86 can integrally raise and lower the discharge portion 61, the introduction portion 70, and the tilt adjustment portion 81 under the drive of the lifting drive portion 88 as described above. Therefore, for example, the vertical adjustment portion 86 lowers the discharge portion 61 with the tilt angle adjusted so that the upper surface of the rotary table 21 and the lower surface of the discharge portion 61 are parallel downward. Thereby, the substrate processing apparatus 1 can adjust the interval d between the upper surface of the rotary table 21 and the lower surface of the discharge portion 61 (gap 61C) to, for example, the same interval as at the time of product shipment.

[0094] For example, the substrate processing apparatus 1 implements the operation of the gas supply structure 60 as described above by performing a pressure adjustment method as shown in FIG. 8 under the control of the control unit 90. FIG. 8 is a flowchart showing the pressure adjustment method according to the embodiment.

[0095] The substrate processing apparatus 1 detects the static pressure of the gap 61C between the upper surface of the rotary table 21 and the lower surface of the discharge portion 61 while the separation gas is being supplied during substrate processing or cleaning processing by the pressure detection unit 66 (step S101). Thereby, the control unit 90 can monitor the pressure distribution generated in the separation region D during substrate processing or cleaning processing.

[0096] Further, the control unit 90 calculates the state of the gap 61C based on the detection information of the acquired pressure detection unit 66 (inner pressure detection unit 67 and outer pressure detection unit 68) (step S102). For example, the control unit 90 calculates the difference between the pressure of the inner pressure detection unit 67 and the pressure of the outer pressure detection unit 68. Further, the control unit 90 previously holds a function or map information that associates the pressure difference with the deviation of the interval d of the gap 61C, and extracts the deviation of the interval d of the gap 61C in the radial direction from the calculated pressure difference. Then, the control unit 90 calculates the target tilt angle of the discharge unit 61 so that the extracted deviation of the interval d of the gap 61C is eliminated, and stores it in the memory 93. Alternatively, the control unit 90 may hold the reference pressure and the interval d for each of the inner pressure detection unit 67 and the outer pressure detection unit 68 at the time of product shipment or the like, and calculate the amount of change in the current pressure with respect to the reference pressure. Then, for example, the control unit 90 calculates the target vertical position of the discharge unit 61 to return to the reference pressure based on the amount of change in the pressure with respect to the reference pressure, and stores it in the memory 93.

[0097] The substrate processing apparatus 1 performs an operation of displacing the discharge unit 61 during maintenance of the apparatus or during an interval between substrate processes. For example, the control unit 90 compares the pressure difference calculated in step S102 with a threshold value (not shown) and determines whether the pressure difference is equal to or greater than the threshold value (step S103). The case where the pressure difference is equal to or greater than the threshold value is a pattern in which it is better to displace the discharge unit 61 of the gas supply structure 60, and the case where the pressure difference is less than the threshold value is a pattern in which the position of the discharge unit 61 may remain current. When the pressure difference is equal to or greater than the threshold value (step S103: YES), the control unit 90 proceeds to step S104, while when the pressure difference is less than the threshold value (step S104: NO), the control unit 90 ends this processing flow. After the end of this processing flow, it goes without saying that the substrate processing apparatus 1 may continue the substrate processing.

[0098] In step S104, the control unit 90 starts the displacement of the ejection unit 61, and first adjusts the tilt posture in the radial direction of the ejection unit 61 by the tilt adjustment unit 81 of the displacement mechanism 80 (see also FIG. 7(C)). As described above, the control unit 90 internally holds the target tilt angle based on the detected pressure difference. The control unit 90 controls the operation of the tilt adjustment unit 81 according to this target tilt angle. For example, the control unit 90 controls the operation of the tilt drive unit 84 based on the target tilt angle, so that the inner side in the radial direction of the ejection unit 61 tilts upward while the outer side in the radial direction of the ejection unit 61 tilts downward to adjust the tilt angle of the ejection unit 61.

[0099] Next, the control unit 90 adjusts the vertical position of the ejection unit 61 by the vertical adjustment unit 86 of the displacement mechanism 80 (step S105: see also FIG. 7(D)). As described above, the control unit 90 internally holds the target vertical position based on the detected pressure. The control unit 90 controls the operation of the vertical adjustment unit 86 according to this target vertical position. For example, the control unit 90 controls the operation of the lifting drive unit 88 based on the target vertical position, and lowers the ejection unit 61 so that the lower surface of the ejection unit 61 is close to the upper surface of the rotary table 21. Thereby, the control unit 90 can adjust the interval d between the upper surface of the rotary table 21 and the lower surface of the ejection unit 61 (gap 61C) to an appropriate value.

[0100] By the above pressure adjustment method, the substrate processing apparatus 1 can make the lower surface of the ejection unit 61 parallel to the upper surface of the rotary table 21 and adjust the gap 61C in the separation region D to an appropriate interval d. Thereby, the substrate processing apparatus 1 can promote the pressure uniformity in the separation region D during substrate processing, and it becomes possible to stabilize the influence of the separation gas on the source gas in the source gas adsorption region P1 and the reaction gas in the reaction gas supply region P2.

[0101] Note that the substrate processing apparatus 1 according to the embodiment is not limited to the above embodiment and can take various modifications. For example, the substrate processing apparatus 1 is not limited to an apparatus that performs a film forming process for forming a film on the surface of the substrate W, and may be an apparatus that performs an etching process, a cleaning process, an ashing process, etc. on the substrate W.

[0102] The substrate processing apparatus 1 according to the embodiment is configured to be displaceable with respect to the gas supply structure 60 in the separation region D. However, the substrate processing apparatus 1 may also be configured to be displaceable based on the pressure in each region with respect to the raw material gas nozzle 121 (gas supply structure 60) in the raw material gas adsorption region P1 and / or the reaction gas nozzle 122 (gas supply structure 60) in the reaction gas supply region P2. Thereby, the substrate processing apparatus 1 can enhance the in-plane uniformity during substrate processing.

[0103] The technical idea and effects of the present disclosure described in the above embodiments will be described below.

[0104] A first aspect of the present disclosure is a pressure adjustment method for a substrate processing apparatus 1 including a processing container 11, a rotary table 21 rotatably provided inside the processing container 11 and on which a plurality of substrates W are placed at positions radially away from the rotation center, and a gas supply structure 60 that supplies gas to the plurality of substrates W placed on the rotary table 21 and is displaceable relative to the rotary table 21, the method comprising: (A) a step of detecting the pressure in the gap 61C between the rotary table 21 and the gas supply structure 60 by a pressure detection unit 66; and (B) a step of displacing the gas supply structure 60 based on the pressure detected by the pressure detection unit 66 to adjust the gap 61C between the rotary table 21 and the gas supply structure 60.

[0105] According to the above, the pressure adjustment method can adjust the pressure between the rotary table 21 and the gas supply structure 60 to an appropriate state by adjusting the gap 61C between the rotary table 21 and the gas supply structure 60 based on the pressure detected by the pressure detection unit 66. Thereby, for example, the substrate processing apparatus 1 can make the pressure distribution in the gap 61C between the rotary table 21 and the gas supply structure 60 uniform, and can promote high-quality substrate processing such as enhancing the in-plane uniformity of substrate processing.

[0106] Also, in step (A), the first pressure on the radially inner side of the rotary table 21 and the second pressure on the radially outer side of the rotary table 21 are respectively detected. By using the first pressure and the second pressure in the radial direction of the rotary table 21 in this way, the pressure adjustment method can perform the adjustment of the gap with higher accuracy.

[0107] Further, based on the first pressure and the second pressure detected in step (A), the target value of the displacement of the gas supply structure 60 is calculated, and in step (B), the gas supply structure 60 is displaced based on the target value of the displacement of the gas supply structure 60. Thereby, the pressure adjustment method can displace the gas supply structure 60 along the target value, and can appropriately adjust the pressure distribution of the gap.

[0108] Also, the gas supply structure 60 includes a discharge part 61 having a plurality of gas discharge ports 64 for discharging gas and a pressure detection part 66, and in step (B), the discharge part 61 is displaced relative to the rotary table 21. Thereby, the pressure adjustment method can displace the discharge part 61, and can also displace each gas discharge port and the pressure detection part 66 integrally, making it possible to adjust the pressure more easily.

[0109] Also, the gas supply structure 60 has a peripheral block part 69 disposed non - contact with the discharge part 61 at an adjacent position in the circumferential direction of the discharge part 61, and in step (B), the discharge part 61 is displaced relative to the peripheral block part 69. Thereby, in the peripheral block part 69, the distance from the rotary table 21 can be kept small, and the movement and mixing of a plurality of types of processing gases toward the discharge part 61 can be suppressed.

[0110] Also, in step (B), as the displacement of the gas supply structure 60 based on the pressure, the tilt angle of the gas supply structure 60 along the radial direction is adjusted. Thereby, the pressure adjustment method can, for example, make the lower surface of the gas supply structure 60 (discharge part 61) parallel to the upper surface of the rotary table 21, and can further promote the uniformity of the pressure distribution in the gap 61C.

[0111] In the step (B), as the displacement of the gas supply structure 60 based on the pressure, the vertical position of the gas supply structure 60 is adjusted. Thereby, the pressure adjustment method can adjust the distance d between the lower surface of the gas supply structure 60 (discharge part 61) and the upper surface of the rotary table 21 to, for example, the distance at the time of product shipment or the like.

[0112] In the step (B), after adjusting the tilt angle of the gas supply structure 60, the vertical position of the gas supply structure 60 is adjusted. Thereby, the gas supply structure 60 can avoid contacting other components when adjusting the tilt angle and the vertical position.

[0113] Further, a gas introduction part 12 for supplying different types of processing gases is provided with the gas supply structure 60 interposed therebetween, and the gas supply structure 60 supplies a separation gas for separating different types of processing gases as a gas to the gap 61C. Thereby, the pressure adjustment method can maintain the pressure distribution in the separation region D for supplying the separation gas and stably suppress the mixing of different types of processing gases.

[0114] Further, a second aspect of the present disclosure is a substrate processing apparatus 1 including a processing container 11, a rotary table 21 rotatably provided inside the processing container 11 and on which a plurality of substrates W are placed at positions radially separated from the rotation center, a gas supply structure 60 that supplies gas to the plurality of substrates W placed on the rotary table 21 and is displaceable relative to the rotary table 21, a pressure detection part 66 that detects the pressure in the gap between the rotary table 21 and the gas supply structure 60, and a control part 90 that processes the detection information of the pressure detection part 66. The control part 90 controls (A) a step of detecting the pressure in the gap 61C between the rotary table 21 and the gas supply structure 60 by the pressure detection part 66, and (B) a step of displacing the gas supply structure 60 based on the pressure detected by the pressure detection part 66 to adjust the gap 61C between the rotary table 21 and the gas supply structure 60. Also in this case, the substrate processing apparatus 1 can promote high quality of substrate processing by appropriately adjusting the gap 61C between the rotary table 21 and the gas supply structure 60.

[0115] The pressure adjustment method and the substrate processing apparatus 1 according to the embodiments disclosed this time are illustrative in all respects and not restrictive. The embodiments can be modified and improved in various forms without departing from the scope and gist of the appended claims. The matters described in the above plurality of embodiments can also adopt other configurations and can be combined within a non - conflicting range.

Explanation of Signs

[0116] 11 Processing container 21 Rotating table 60 Gas supply structure 66 Pressure detection unit 90 Control unit 100 Substrate processing apparatus W Substrate

Claims

1. A processing container, A rotatable turntable provided inside the processing container for placing a plurality of substrates at positions radially away from the center of rotation, A pressure adjustment method for a substrate processing apparatus including a gas supply structure that supplies gas to the plurality of substrates placed on the turntable and is displaceable relative to the turntable, comprising: (A) Detecting the pressure in the gap between the turntable and the gas supply structure by a pressure detection unit; (B) Displacing the gas supply structure based on the pressure detected by the pressure detection unit to adjust the gap between the turntable and the gas supply structure. A pressure adjustment method.

2. In the step (A), the first pressure on the center side in the radial direction of the turntable and the second pressure on the outer side in the radial direction of the turntable are respectively detected. The pressure adjustment method according to Claim 1.

3. Based on the first pressure and the second pressure detected in the step (A), calculating a target value for the displacement of the gas supply structure; In the step (B), displacing the gas supply structure based on the target value for the displacement of the gas supply structure. The pressure adjustment method according to Claim 2.

4. The gas supply structure includes a plurality of gas discharge ports for discharging the gas and a discharge unit having the pressure detection unit; In the step (B), displacing the discharge unit relative to the turntable. The pressure adjustment method according to any one of Claims 1 to 3.

5. The gas supply structure has a peripheral block portion disposed non - contact with the discharge unit at an adjacent position in the circumferential direction of the discharge unit; In the step (B), displacing the discharge unit relative to the peripheral block portion. The pressure adjustment method according to Claim 4.

6. In the step (B), as the displacement of the gas supply structure based on the pressure, adjusting the tilt angle of the gas supply structure along the radial direction. The pressure adjustment method according to any one of Claims 1 to 3.

7. In the step (B), as the displacement of the gas supply structure based on the pressure, adjusting the vertical position of the gas supply structure. The pressure adjustment method according to Claim 6.

8. In the step (B), after adjusting the tilt angle of the gas supply structure, adjusting the vertical position of the gas supply structure. The pressure adjustment method according to Claim 7.

9. Comprising a gas introduction unit for supplying different types of processing gases sandwiching the gas supply structure. The gas supply structure supplies a separation gas for separating the different types of processing gases as the gas into the gap. The pressure adjustment method according to any one of claims 1 to 3.

10. A processing container, A rotary table rotatably provided inside the processing container and placing a plurality of substrates at positions radially away from the rotation center, A gas supply structure that supplies gas to the plurality of substrates placed on the rotary table and is displaceable relative to the rotary table, A pressure detection unit that detects the pressure in the gap between the rotary table and the gas supply structure, A substrate processing apparatus including a control unit that processes detection information of the pressure detection unit, The control unit, (A) A step of detecting the pressure in the gap between the rotary table and the gas supply structure by the pressure detection unit, (B) A step of adjusting the gap between the rotary table and the gas supply structure by displacing the gas supply structure based on the pressure detected by the pressure detection unit, and controls the steps. Substrate processing apparatus.

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