Joining method for electronic devices and method of mass transferring electronic devices

Abstract

To provide a joining method for electronic devices.SOLUTION: The joining method for electronic devices, comprises the steps of: providing a first substrate having a first top surface and a first bottom surface opposite to each other, and the first top surface having a plurality of spaced electronic devices formed thereon and aligned in one column or one row; providing a second substrate below the first substrate, wherein the second substrate has a second top surface and a second bottom surface opposite to each other, and the first top surface faces the second top surface; and providing a laser device, and causes the laser device to emit a linear laser beam toward the first substrate so as to irradiate the electronic devices aligned in the one column or the one row on the first top surface of the first substrate, and thereby causing the electronic devices to be peeled off from the first top surface of the first substrate and joined to the second top surface of the second substrate.SELECTED DRAWING: Figure 1C

Description

Technical Field

[0001] The present invention discloses a bonding method for electronic devices and a transfer method for a large number of electronic devices.

Background Art

[0002] Since light-emitting diodes have advantages such as active light emission, high brightness, and energy saving, they are widely applied in technical fields such as lighting, displays, and projectors. Micro LED Displays are becoming the new generation of display technology. However, a high-density (FHD: Fuel High Density) display has approximately 2 million pixels in 1920 rows × 1080 columns, and each pixel is further divided into three subpixels of red, green, and blue. Therefore, a high-density light-emitting diode display (FHD LED Display) has a total of approximately 6 million LED dies. To cut 6 million dies and attach them to the substrate of a display panel, an important technology is required to accurately transfer and fixedly bond a large number of micro light-emitting diodes to the substrate of the display panel.

[0003] Conventional bonding methods for electronic devices mainly utilize a reflow soldering method. After heating and reflowing an electronic device with solder paste, it is soldered to a target substrate. However, the reflow soldering method has drawbacks such as drift of electronic devices due to thermal unevenness during the reflow process, short circuits of electronic devices due to a large amount of solder paste, dry soldering due to a small amount of solder paste, and cold soldering due to a low reflow temperature.

[0004] In addition, conventional methods for transferring a large number of electronic devices mainly include methods such as electrostatic transfer, magnetic transfer, microtransfer, and fluid assembly. However, these methods for transferring a large number of electronic devices need to further improve the transfer speed and yield.

[0005] In view of this, the industry is eagerly expecting a new method for bonding electronic devices and a method for transferring a large number of electronic devices.

Summary of the Invention

[0006] The present invention discloses a method for bonding electronic devices, including the following steps: providing a first substrate having a first upper surface and a first lower surface facing each other, on the first upper surface of the first substrate, there are a plurality of electronic devices, and the electronic devices are arranged in one row or multiple rows at intervals; providing a second substrate having a second upper surface and a second lower surface facing each other, disposing the second substrate below the first substrate, and the first upper surface faces the second upper surface; providing a laser device, the laser device emits linear laser light to the first substrate, and irradiates the linear laser light on the electronic devices arranged in one row or one column located on the first upper surface of the first substrate, so that the electronic devices can be peeled off from the first upper surface of the first substrate and bonded to the second upper surface of the second substrate.

[0007] In the above-mentioned method for bonding electronic devices, the electronic device is selected from one or more groups consisting of light-emitting diodes, laser diodes, and semiconductor elements.

[0008] In the above-mentioned method for bonding electronic devices, the semiconductor element is selected from one or more groups consisting of a processor, a memory IC, a microelement IC, a logic IC, and an analog IC.

[0009] In the above-mentioned method for bonding electronic devices, the second substrate is a semiconductor substrate, a ceramic substrate, a metal substrate, a glass substrate, a printed wiring board, or a flexible printed wiring board.

[0010] In the above-mentioned method for bonding electronic devices, the laser device has a laser divergence angle θ, and the length of the linear laser light can be controlled by adjusting the magnitude of the angle of the laser divergence angle θ. Also, the angle of the laser divergence angle θ is, for example, 1 degree or more, but is not limited thereto.

[0011] In the method for bonding the aforementioned electronic device, the laser device includes a laser light source and an optical element, and the laser light emitted by the laser light source is converted into linear laser light by the optical element.

[0012] In the method for bonding the aforementioned electronic device, the optical element is a diffractive optical element, and / or a refractive optical element, and / or a reflective optical element.

[0013] The present invention further discloses a method for transferring a large number of electronic devices, including the following steps: providing a first substrate having a first upper surface and a first lower surface facing each other, wherein a plurality of electronic devices are provided on the first upper surface of the first substrate, and the electronic devices are arranged along a first direction and a second direction respectively to form a first electronic device matrix formed by an array of M rows of electronic devices × N columns of electronic devices, where M and N are both natural numbers greater than 1; providing a second substrate having a second upper surface and a second lower surface facing each other, arranging the second substrate below the first substrate, and the first upper surface faces the second upper surface; providing a laser device, the laser device emits linear laser light to the first substrate, and sequentially irradiates the linear laser light to the electronic devices in the P-th row or the Q-th column in the first electronic device matrix, peeling the electronic devices in the P-th row or the Q-th column from the first upper surface of the first substrate and bonding them to the second upper surface of the second substrate, after all the electronic devices in the first electronic device matrix are peeled from the first upper surface of the first substrate and bonded to the second upper surface of the second substrate, a second electronic device matrix formed by an array of M rows of electronic devices × N columns of electronic devices is formed on the second upper surface of the second substrate. Here, P and Q are both natural numbers, and 1 ≤ P ≤ M, 1 ≤ Q ≤ N.

[0014] In the method for transferring the aforementioned large number of electronic devices, the electronic device is selected from one or more groups consisting of a light emitting diode, a laser diode, and a semiconductor element.

[0015] In the method for transferring a large number of the foregoing electronic devices, the semiconductor element is selected from one or more groups consisting of a processor, a memory IC, a microelement IC, a logic IC, and an analog IC.

[0016] In the method for transferring a large number of the foregoing electronic devices, the second substrate is a semiconductor substrate, a ceramic substrate, a metal substrate, a glass substrate, a printed wiring board, or a flexible printed wiring board.

[0017] In the method for transferring a large number of the foregoing electronic devices, the laser device has a laser divergence angle θ, and the length of the linear laser light can be controlled by adjusting the magnitude of the angle of the laser divergence angle θ. Further, the angle of the laser divergence angle θ is, for example, 1 degree or more, but is not limited thereto.

[0018] In the method for transferring a large number of the foregoing electronic devices, the laser device includes a laser light source and an optical element, and the laser light emitted by the laser light source is converted into linear laser light by the optical element.

[0019] In the method for transferring a large number of the foregoing electronic devices, it is a diffractive optical element, and / or a refractive optical element, and / or a reflective optical element.

Brief Description of the Drawings

[0020]

Figure 1A

Figure 1B

Figure 1C

Figure 1D

Figure 2A

Figure 2B

Figure 2C

Figure 2D

Figure 2E

Figure 2F

Mode for Carrying Out the Invention

[0021] To describe the disclosure of the present invention in more detail and completely, embodiments and specific examples of the present invention will be described below. However, this is not the only form for implementing or operating specific examples of the present invention. Each example disclosed below may be combined with each other, replaced, or added to one example with another example without further description or explanation when beneficial.

[0022] In the following description, many specific details will be described in detail so that the reader can fully understand the following examples. However, the embodiments of the present invention can also be implemented without such specific details. In other cases, well-known structures and devices are only schematically illustrated in the drawings to simplify the drawings.

[0023] Examples Example 1 First, refer to FIG. 1A. As shown in FIG. 1A, a first substrate 10 having opposing first upper surface 10A and first lower surface 10B is provided. On the first upper surface 10A of this first substrate 10, there are a plurality of electronic devices 12. These electronic devices 12 are arranged in a single row or column with a space therebetween. These electronic devices 12 are selected from, for example, but not limited to, one or more groups consisting of light-emitting diodes, laser diodes, and semiconductor elements. The semiconductor elements are selected from, for example, but not limited to, one or more groups consisting of processors, memory ICs, microelement ICs, logic ICs, and analog ICs.

[0024] Next, refer to FIG. 1B. As shown in FIG. 1B, a second substrate 20 disposed below the first substrate 10 is provided. This second substrate 20 has opposing second upper surface 20A and second lower surface 20B. This first upper surface 10A faces this second upper surface 20A. This second substrate 20 is, for example, but not limited to, a semiconductor substrate, a ceramic substrate, a metal substrate, a glass substrate, a printed wiring board, or a flexible printed wiring board.

[0025] Next, refer to FIGS. 1C and 1D. As shown in FIG. 1C, a laser device 30 is provided. This laser device 30 emits a linear laser beam 35 toward the first substrate 10. This linear laser beam 35 irradiates the electronic devices 12 arranged in a row or a column located on the first upper surface 10A of the first substrate 10, separates the electronic devices 12 from the first upper surface 10A of the first substrate 10, and bonds them to the second upper surface 2A of the second substrate 20 as shown in FIG. 1D. The laser device 30 includes a laser light source 31 and an optical element 32. The laser beam emitted by the laser light source 31 is converted into a linear laser beam 35 by the optical element 32. This optical element 32 is, for example, a diffractive optical element, and / or a refractive optical element, and / or a reflective optical element, but is not limited thereto. Further, the above laser device 30 has a laser divergence angle θ. The length of this linear laser beam 35 can be controlled by adjusting the magnitude of the angle of the laser divergence angle θ. Here, the angle of this laser divergence angle θ is, for example, 1 degree or more, but is not limited thereto.

[0026] Example 2 First, refer to FIG. 2A. As shown in FIG. 2A, a first substrate 100 having opposing first upper surface 100A and first lower surface 100B is provided. On this first upper surface 100A, there are a plurality of electronic devices 120. These electronic devices 120 are respectively arranged along a first direction and a second direction to form a first electronic device matrix 150 formed in an arrangement of M rows of electronic devices × N columns of electronic devices. Here, both M and N are natural numbers greater than 1. These electronic devices 120 are selected from, for example, one or more groups consisting of light-emitting diodes, laser diodes, and semiconductor elements, but are not limited thereto. This semiconductor element is selected from, for example, one or more groups consisting of processors, memory ICs, microelement ICs, logic ICs, and analog ICs, but is not limited thereto.

[0027] As shown in FIG. 2A, the first electronic device matrix 150 of the second embodiment is formed by a plurality of 8 rows of electronic devices 120 arranged in the X-axis direction and a plurality of 5 columns of electronic devices 120 arranged in the Y-axis direction. That is, M = 8, N = 5, the first direction is the X-axis direction, and the second direction is the Y-axis direction. However, according to other embodiments of the present invention, M and N may each be other natural numbers greater than 1, and the first and second directions can also be changed to other set directions as required.

[0028] Next, refer to FIG. 2B. As shown in FIG. 2B, a second substrate 200 provided below the first substrate 100 is provided. This second substrate 200 has a second upper surface 200A and a second lower surface 200B facing each other. The first upper surface 100A faces the second upper surface 200A. This second substrate 200 is, for example, a semiconductor substrate, a ceramic substrate, a metal substrate, a glass substrate, a printed wiring board, or a flexible printed wiring board, but is not limited thereto.

[0029] Next, refer to FIGS. 2C to 2E. As shown in FIGS. 2C to 2E, a laser device 300 is provided. This laser device 300 emits a linear laser beam 350 onto the first substrate 100. This linear laser beam 350 sequentially irradiates the electronic devices in the P-th row or the Q-th column of the first electronic device matrix 150, separates the electronic devices in the P-th row or the Q-th column of the electronic devices 120 from the first upper surface 100A of the first substrate 100, and bonds them to the second upper surface 200A of the second substrate 200. Here, both P and Q are natural numbers, and 1 ≤ P ≤ M, 1 ≤ Q ≤ N. This laser device 300 includes a laser light source 310 and an optical element 320. The laser beam emitted by this laser light source 310 is converted into a linear laser beam 350 by an optical element 320 that is, for example, a diffractive optical element, and / or a refractive optical element, and / or a reflective optical element. The above laser device 300 has a laser divergence angle θ. The length of this linear laser beam 350 can be controlled by adjusting the magnitude of the angle of the laser divergence angle θ. Here, the angle of this laser divergence angle θ is, for example, 1 degree or more, but is not limited thereto.

[0030] As shown in FIGS. 2C to 2E, in the second embodiment, this linear laser beam 350 irradiates the electronic devices 120 in the first row, second row, ……, eighth row in the first electronic device matrix 150 along the X-axis direction in sequence, and peels off the electronic devices 120 in the first row, second row, ……, eighth row from the first upper surface 100A of the first substrate 100 in sequence, and joins them to the second upper surface 200A of the second substrate 200. That is, P = 1, 2, …, 8. According to another embodiment of the present invention, the linear laser beam 350 irradiates the electronic devices 120 in the first row, second row, ……, fifth row of the first electronic device matrix 150 along the Y-axis direction in sequence, and peels off the electronic devices 120 in the first row, second row, ……, fifth row from the first upper surface 100A of the first substrate 100 in sequence, and joins them to the second upper surface 200A of the second substrate 200. That is, Q = 1, 2, …, 5.

[0031] Finally, referring to FIG. 2F. As shown in FIG. 2F, all the electronic devices 120 in this first electronic device matrix 150 are peeled off from the first upper surface 100A of the first substrate 100 and joined to the second upper surface 200A of the second substrate 200. Then, as shown in FIG. 2F, a second electronic device matrix 250 formed in an array of 8 rows of electronic devices × 5 columns of electronic devices can be formed on the second upper surface 200A of this second substrate 200.

[0032] Although the present invention is disclosed as described in the embodiments, it is not used to limit the present invention, and any person proficient in this technology can make various changes and finishes without departing from the spirit and scope of the present invention. Therefore, the protection scope of the present invention is subject to that defined by the appended claims.

Explanation of Reference Numerals

[0033] 10, 100 First substrate 10A, 100A First upper surface 10B, 100B First lower surface 12, 120 Electronic device 20, 200 Second substrate Second upper surface of 20A and 200A Second lower surface of 20B and 200B Laser devices 30 and 300 Laser light sources 31 and 310 Optical elements 32 and 320 First electronic device matrix 150 Second electronic device matrix 250 Laser divergence angle θ

Claims

1. A method for bonding electronic devices, comprising: providing a first substrate having a first upper surface and a first lower surface facing each other, wherein a plurality of electronic devices are provided on the first upper surface of the first substrate, and the electronic devices are arranged in one row or one column with a space therebetween; providing a second substrate having a second upper surface and a second lower surface facing each other, disposing the second substrate below the first substrate, and the first upper surface faces the second upper surface; providing a laser device, the laser device emits a linear laser beam to the first substrate, and irradiates the linear laser beam on the electronic devices arranged in one row or one column located on the first upper surface of the first substrate, so that the electronic devices can be peeled off from the first upper surface of the first substrate and bonded to the second upper surface of the second substrate steps, a method for bonding electronic devices.

2. The method for bonding an electronic device according to claim 1, wherein the electronic device is selected from one or more groups consisting of a light emitting diode, a laser diode, and a semiconductor element.

3. The method for bonding an electronic device according to claim 2, wherein the semiconductor element is selected from one or more groups consisting of a processor, a memory IC, a microelement IC, a logic IC, and an analog IC.

4. The method for bonding an electronic device according to claim 1, wherein the second substrate is a semiconductor substrate, a ceramic substrate, a metal substrate, a glass substrate, a printed wiring board, or a flexible printed wiring board.

5. The method for bonding an electronic device according to claim 1, wherein the laser device has a laser divergence angle θ, and the length of the linear laser beam can be controlled by adjusting the magnitude of the angle of the laser divergence angle θ.

6. The method for bonding an electronic device according to claim 5, wherein the angle of the laser divergence angle θ is 1 degree or more.

7. The method for bonding an electronic device according to any one of claims 1 to 6, wherein the laser device includes a laser light source and an optical element, and the laser light emitted by the laser light source is converted into a linear laser beam by the optical element.

8. The method for bonding an electronic device according to claim 7, wherein the optical element is a diffractive optical element, and / or a refractive optical element, and / or a reflective optical element.

9. A method for transferring a large number of electronic devices, comprising: Provide a first substrate having a first upper surface and a first lower surface that face each other. On the first upper surface of the first substrate, there are a plurality of electronic devices. The electronic devices are arranged along the first direction and the second direction respectively, and form a first electronic device matrix formed by an array of M rows of electronic devices × N columns of electronic devices. Here, both M and N are natural numbers greater than 1. Provide a second substrate having a second upper surface and a second lower surface that face each other. Place the second substrate below the first substrate. The first upper surface faces the second upper surface. Provide a laser device. The laser device emits a linear laser beam to the first substrate, and sequentially irradiates the linear laser beam on the electronic devices in the P-th row or the Q-th column in the first electronic device matrix, and peels the electronic devices in the P-th row or the Q-th column from the first upper surface of the first substrate and bonds them to the second upper surface of the second substrate. After all the electronic devices in the first electronic device matrix are peeled from the first upper surface of the first substrate and bonded to the second upper surface of the second substrate, a second electronic device matrix formed by an array of M rows of electronic devices × N columns of electronic devices is formed on the second upper surface of the second substrate. Here, both P and Q are natural numbers, and 1 ≤ P ≤ M, 1 ≤ Q ≤ N. A method for transferring a large number of electronic devices, including steps.

10. The method for transferring a large number of electronic devices according to claim 9, wherein the electronic device is selected from one or more groups consisting of a light-emitting diode, a laser diode, and a semiconductor element.

11. The method for transferring a large number of electronic devices according to claim 10, wherein the semiconductor element is selected from one or more groups consisting of a processor, a memory IC, a microelement IC, a logic IC, and an analog IC.

12. The method for transferring a large number of electronic devices according to claim 9, wherein the second substrate is a semiconductor substrate, a ceramic substrate, a metal substrate, a glass substrate, a printed wiring board, or a flexible printed wiring board.

13. The method for transferring a large number of electronic devices according to claim 9, wherein the laser device has a laser divergence angle θ, and the length of the linear laser beam can be controlled by adjusting the magnitude of the angle of the laser divergence angle θ.

14. The method for transferring a large number of electronic devices according to claim 13, wherein the angle of the laser divergence angle θ is 1 degree or more.

15. The method for transferring a large number of electronic devices according to any one of claims 9 to 14, wherein the laser device includes a laser light source and an optical element, and the laser light emitted by the laser light source is converted into linear laser light by the optical element.

16. The method for transferring a large number of electronic devices according to claim 15, wherein the optical element is a diffractive optical element, and / or a refractive optical element, and / or a reflective optical element.

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