Method of bonding electronic device and method of transferring large number of electronic devices

Abstract

To provide a method of bonding an electronic device and a method of transferring large number of electronic devices.SOLUTION: A method of bonding an electronic device includes: providing a first substrate 10 having a first top face and a first bottom face opposed with the first top face, a plurality of electronic devices 12 being arranged in a row or in a line spaced apart from one another on the first top face of the first substrate; providing a second substrate 20 having a second top face and a second bottom face opposed with the second top face, and disposing the second substrate under the first substrate, the first top face facing the second top face; and providing a laser apparatus 30, emitting a surface-shaped laser beam on the first substrate, irradiating the electronic devices arranged in a row or in a line located on the first top face of the first substrate with the laser beam, and peeling the electronic devices from the first top face of the first substrate to bond the electronic devices to the second top face of the second substrate.SELECTED DRAWING: Figure 1C

Description

Technical Field

[0001] The present invention discloses a method for bonding electronic devices and a method for transferring a large number of electronic devices.

Background Art

[0002] Since light-emitting diodes have advantages such as active light emission, high brightness, and energy saving, they are widely applied in technical fields such as lighting, displays, and projectors. Micro LED Displays are becoming a new generation of display technology. However, a high-density (FHD: Fuel High Density) display has approximately 2 million pixels of 1920 rows × 1080 columns, and each pixel is further divided into three subpixels of red, green, and blue. Therefore, a high-density light-emitting diode display (FHD LED Display) has a total of approximately 6 million LED dies. To cut 6 million dies and attach them to the substrate of the display panel, an important technology is required to accurately transfer and fixedly bond a large number of micro light-emitting diodes to the substrate of the display panel.

[0003] Conventional methods for bonding electronic devices mainly use the reflow soldering method. After heating and reflowing the electronic device with solder paste, it is soldered to the target substrate. However, the reflow soldering method has drawbacks such as drift of the electronic device due to thermal unevenness during the reflow process, short circuit of the electronic device due to the large amount of solder paste, dry joint due to the small amount of solder paste, and cold solder joint due to the low reflow temperature.

[0004] In addition, conventional methods for transferring a large number of electronic devices mainly include methods such as electrostatic transfer, magnetic transfer, microtransfer, and fluid assembly. However, these methods for transferring a large number of electronic devices need to further improve the transfer speed and yield.

[0005] In view of this, the industry is eagerly expecting a new method for bonding electronic devices and a method for transferring a large number of electronic devices.

Summary of the Invention

[0006] The present invention discloses a method for bonding electronic devices, including the following steps: providing a first substrate having a first upper surface and a first lower surface facing each other, on the first upper surface of the first substrate, there are a plurality of electronic devices, and the electronic devices are arranged in one row or one column at intervals; providing a second substrate having a second upper surface and a second lower surface facing each other, disposing the second substrate below the first substrate, and the first upper surface faces the second upper surface; providing a laser device, the laser device emits a surface-shaped laser beam with respect to the first substrate, and irradiates the surface-shaped laser beam on the electronic devices arranged in one row or one column located on the first upper surface of the first substrate, so that the electronic devices can be peeled off from the first upper surface of the first substrate and bonded to the second upper surface of the second substrate.

[0007] In the above-mentioned method for bonding electronic devices, the electronic device is selected from one or more groups consisting of a light-emitting diode, a laser diode, and a semiconductor element.

[0008] In the above-mentioned method for bonding electronic devices, the semiconductor element is selected from one or more groups consisting of a processor, a memory IC, a microelement IC, a logic IC, and an analog IC.

[0009] In the above-mentioned method for bonding electronic devices, the second substrate is a semiconductor substrate, a ceramic substrate, a metal substrate, a glass substrate, a printed wiring board, or a flexible printed wiring board.

[0010] In the method for bonding the aforementioned electronic device, the laser device has a first laser divergence angle θ1 and a second laser divergence angle θ2. The length of the planar laser beam can be controlled by adjusting the magnitude of the angle of the first laser divergence angle θ1. The width of the planar laser beam can be controlled by adjusting the magnitude of the angle of the second laser divergence angle θ2.

[0011] In the method for bonding the aforementioned electronic device, the angle of the first laser divergence angle θ1 is 1 degree or more, and the angle of the second laser divergence angle θ2 is 1 degree or more.

[0012] In the method for bonding the aforementioned electronic device, the planar laser beam includes a preheating region and a welding region. The planar laser beam irradiates the electronic devices arranged in a row or a line where the preheating region and the welding region are located in sequence on the first upper surface of the first substrate, peels the electronic devices from the first upper surface of the first substrate, and bonds them to the second upper surface of the second substrate.

[0013] In the method for bonding the aforementioned electronic device, the laser device includes a laser light source and an optical element. The laser beam emitted by the laser light source is converted into a planar laser beam by the optical element.

[0014] In the method for bonding the aforementioned electronic device, the optical element is a diffractive optical element, and / or a refractive optical element, and / or a reflective optical element.

[0015] The present invention further discloses a method for transferring a large number of electronic devices, including the following steps: providing a first substrate having a first upper surface and a first lower surface facing each other, on which there are a plurality of electronic devices on the first upper surface of the first substrate, and the electronic devices are arranged along the first axial direction and the second axial direction respectively to form a first electronic device matrix formed by an arrangement of M rows of electronic devices × N columns of electronic devices, where M and N are both natural numbers greater than 1; providing a second substrate having a second upper surface and a second lower surface facing each other, arranging the second substrate below the first substrate, and the first upper surface faces the second upper surface; providing a laser device, which emits a planar laser beam on the first substrate, and sequentially irradiates the planar laser beam along the first axial direction on one row or a plurality of adjacent rows in the first electronic device matrix, or irradiates the planar laser beam along the second axial direction on one column or a plurality of adjacent columns in the first electronic device matrix, peeling off the electronic devices irradiated by the planar laser beam from the first upper surface of the first substrate and bonding them to the second upper surface of the second substrate. After all the electronic devices in the first electronic device matrix are peeled off from the first upper surface of the first substrate and bonded to the second upper surface of the second substrate, a second electronic device matrix formed by an arrangement of M rows of electronic devices × N columns of electronic devices is formed on the second upper surface of the second substrate.

[0016] In the method for transferring the above-mentioned large number of electronic devices, the electronic device is selected from one or more groups consisting of a light-emitting diode, a laser diode, and a semiconductor element.

[0017] In the method for transferring the above-mentioned large number of electronic devices, the semiconductor element is selected from one or more groups consisting of a processor, a memory IC, a microelement IC, a logic IC, and an analog IC.

[0018] In the method for transferring the above-mentioned large number of electronic devices, the second substrate is a semiconductor substrate, a ceramic substrate, a metal substrate, a glass substrate, a printed wiring board, or a flexible printed wiring board.

[0019] In the method for transferring a large number of the foregoing electronic devices, the laser device has a first laser divergence angle θ1 and a second laser divergence angle θ2. The length of the planar laser beam can be controlled by adjusting the magnitude of the angle of the first laser divergence angle θ1. The width of the planar laser beam can be controlled by adjusting the magnitude of the angle of the second laser divergence angle θ2.

[0020] In the method for transferring a large number of the foregoing electronic devices, the angle of the first laser divergence angle θ1 is 1 degree or more.

[0021] In the method for transferring a large number of the foregoing electronic devices, the angle of the second laser divergence angle θ2 is 1 degree or more.

[0022] In the method for transferring a large number of the foregoing electronic devices, the planar laser beam includes a preheating region and a welding region, and the planar laser beam sequentially irradiates one row or a plurality of adjacent rows in the first electronic device matrix along the first axial direction with the preheating region and the welding region in sequence, or the planar laser beam sequentially irradiates one row or a plurality of adjacent rows in the first electronic device matrix along the second axial direction with the preheating region and the welding region in sequence, and the electronic device irradiated by the planar laser beam is peeled off from the first upper surface of the first substrate and bonded to the second upper surface of the second substrate.

[0023] In the method for transferring a large number of the foregoing electronic devices, the laser device includes a laser light source and an optical element, and the laser beam emitted by the laser light source is converted into a planar laser beam by the optical element.

[0024] In the method for transferring a large number of the foregoing electronic devices, it is a diffractive optical element, and / or a refractive optical element, and / or a reflective optical element.

Brief Description of the Drawings

[0025]

Figure 1A

Figure 1B

Figure 1C

Figure 1D

Figure 2A

Figure 2B

Figure 2C

Figure 2D

Figure 2E

Figure 3A

Figure 3B

Figure 3C

Figure 3D

Figure 3E

Figure 3F

Figure 4A

Figure 4B

Figure 4C

Figure 4D

Figure 4E

Figure 4F

Embodiments for Carrying Out the Invention

[0026] In order to describe the disclosure of the present invention in more detail and completely, embodiments and specific examples of the present invention will be described below. However, this is not the only form for implementing or operating the specific examples of the present invention. Each of the examples disclosed below may be combined with each other, replaced, or additional examples may be added to one example without further description or explanation, if beneficial.

[0027] In the following description, many specific details are described in detail so that the reader can fully understand the following examples. However, the embodiments of the present invention can also be implemented without such specific details. In other cases, well-known structures and devices are only schematically illustrated in the drawings to simplify the drawings.

[0028] Examples Example 1 First, refer to FIG. 1A. As shown in FIG. 1A, a first substrate 10 having opposing first upper surface 10A and first lower surface 10B is provided. On the first upper surface 10A of this first substrate 10, there are a plurality of electronic devices 12. These electronic devices 12 are arranged in a row or a column at intervals from each other. These electronic devices 12 are selected from, for example, but not limited to, one or more groups consisting of light-emitting diodes, laser diodes, and semiconductor elements. The semiconductor elements are selected from, for example, but not limited to, one or more groups consisting of processors, memory ICs, microelement ICs, logic ICs, and analog ICs.

[0029] Next, refer to FIG. 1B. As shown in FIG. 1B, a second substrate 20 disposed below the first substrate 10 is provided. This second substrate 20 has opposing second upper surface 20A and second lower surface 20B. This first upper surface 10A faces this second upper surface 20A. This second substrate 20 is, for example, but not limited to, a semiconductor substrate, a ceramic substrate, a metal substrate, a glass substrate, a printed wiring board, or a flexible printed wiring board.

[0030] Next, refer to FIGS. 1C and 1D. As shown in FIG. 1C, a laser device 30 is provided. This laser device 30 emits a planar laser beam 35 toward this first substrate 10. This planar laser beam 35 irradiates the electronic devices 12 arranged in a row or a column located on the first upper surface 10A of this first substrate 10, separates these electronic devices 12 from the first upper surface 10A of the first substrate 10, and joins them to the second upper surface 2A of the second substrate 20 as shown in FIG. 1D.

[0031] The laser device 30 according to this embodiment includes a laser light source 31 and an optical element 32. The laser light emitted by this laser light source 31 is converted into a planar laser beam 35 by the optical element 32. This optical element 32 is, for example, a diffractive optical element, and / or a refractive optical element, and / or a reflective optical element, but is not limited thereto. Further, the laser device 30 has a first laser divergence angle θ1 and a second laser divergence angle θ2. The length of this planar laser beam 35 can be controlled by adjusting the magnitude of the angle of the first laser divergence angle θ1. The width of this planar laser beam 35 can be controlled by adjusting the magnitude of the angle of the second laser divergence angle θ2. Here, the angle of the first laser divergence angle θ1 is 1 degree or more, and the angle of the second laser divergence angle θ2 is 1 degree or more.

[0032] Example 2 First, refer to FIG. 2A. As shown in FIG. 2A, a first substrate 10 having opposing first upper surface 10A and first lower surface 10B is provided. On the first upper surface 10A of this first substrate 10, there are a plurality of electronic devices 12. These electronic devices 12 are arranged in a row or a column at intervals from each other. These electronic devices 12 are selected from, for example, one or more groups consisting of light-emitting diodes, laser diodes, and semiconductor elements, but are not limited thereto. This semiconductor element is selected from, for example, one or more groups consisting of a processor, a memory IC, a microelement IC, a logic IC, and an analog IC, but is not limited thereto.

[0033] Next, refer to FIG. 2B. As shown in FIG. 2B, a second substrate 20 provided below the first substrate 10 is provided. This second substrate 20 has opposing second upper surface 20A and second lower surface 20B. The first upper surface 10A faces the second upper surface 20A. This second substrate 20 is, for example, a semiconductor substrate, a ceramic substrate, a metal substrate, a glass substrate, a printed wiring board, or a flexible printed wiring board, but is not limited thereto.

[0034] Next, refer to FIGS. 2C to 2E. As shown in FIGS. 2C to 2D, a laser device 30 is provided. This laser device 30 emits a planar laser beam 35 onto the first substrate 10. This planar laser beam 35 includes a preheating region 35A and a welding region 35B. This planar laser beam 35 irradiates the electronic devices 12 arranged in a row or a line on the first upper surface 10A of the first substrate 10 with the preheating region 35A and the welding region 35B in sequence, peels the electronic devices 12 from the first upper surface of the first substrate 10, and joins them to the second upper surface 20A of the second substrate 20 as shown in FIG. 2E.

[0035] The laser device 30 according to this embodiment includes a laser light source 31 and an optical element 32. The laser beam emitted by this laser light source 31 is converted into a planar laser beam 35 by the optical element 32. This optical element 32 is, for example, a diffractive optical element, and / or a refractive optical element, and / or a reflective optical element, but is not limited thereto. Further, the above laser device 30 has a first laser divergence angle θ1 and a second laser divergence angle θ2. The length of this planar laser beam 35 can be controlled by adjusting the magnitude of the angle of the first laser divergence angle θ1. The width of this planar laser beam 35 can be controlled by adjusting the magnitude of the angle of the second laser divergence angle θ2. Here, the angle of the first laser divergence angle θ1 is 1 degree or more, and the angle of the second laser divergence angle θ2 is 1 degree or more.

[0036] Example 3 First, refer to FIG. 3A. As shown in FIG. 3A, a first substrate 100 having opposing first upper surface 100A and first lower surface 100B is provided. On this first upper surface 100A, there are a plurality of electronic devices 120. These electronic devices 120 are each arranged along a first direction and a second direction to form a first electronic device matrix 150 formed in an array of M rows of electronic devices × N columns of electronic devices. Here, both M and N are natural numbers greater than 1. These electronic devices 120 are selected from, for example, but not limited to, one or more groups consisting of light-emitting diodes, laser diodes, and semiconductor elements. This semiconductor element is selected from, for example, but not limited to, one or more groups consisting of processors, memory ICs, microelement ICs, logic ICs, and analog ICs.

[0037] As shown in FIG. 3A, the first electronic device matrix 150 of the third embodiment is formed by a plurality of 8 rows of electronic devices 120 arranged in the X-axis direction and a plurality of 5 columns of electronic devices 120 arranged in the Y-axis direction. That is, M = 8, N = 5, the first direction is the X-axis direction, and the second direction is the Y-axis direction. However, according to other embodiments of the present invention, M and N may each be other natural numbers greater than 1, and the first and second directions can also be changed to other set directions as required.

[0038] Next, refer to FIG. 3B. As shown in FIG. 3B, a second substrate 200 provided below the first substrate 100 is provided. This second substrate 200 has opposing second upper surface 200A and second lower surface 200B. The first upper surface 100A faces the second upper surface 200A. This second substrate 200 is, for example, but not limited to, a semiconductor substrate, a ceramic substrate, a metal substrate, a glass substrate, a printed wiring board, or a flexible printed wiring board.

[0039] Next, refer to FIGS. 3C to 3F. As shown in FIGS. 3C to 3E, a laser device 300 is provided. This laser device 300 emits a planar laser beam 350 onto the first substrate 100. This planar laser beam 350 is sequentially irradiated onto one row or a plurality of adjacent rows in the first electronic device matrix 150 along the first axial direction, or this planar laser beam 350 is irradiated onto one column or a plurality of adjacent columns in the first electronic device matrix 150 along the second axial direction. The electronic device 120 irradiated by this planar laser beam 350 is peeled off from the first upper surface 100A of the first substrate 100 and bonded to the second upper surface 200A of the second substrate 200. After all the electronic devices in the first electronic device matrix 150 are peeled off from the first upper surface 100A of the first substrate 100 and bonded to the second upper surface 200A of the second substrate 200, as shown in FIG. 3F, a second electronic device matrix 250 formed in an arrangement of M rows of electronic devices × N columns of electronic devices is formed on the second upper surface 200A of the second substrate 200.

[0040] The laser device 300 according to this embodiment includes a laser light source 310 and an optical element 320. The laser beam emitted by this laser light source 310 is converted into a planar laser beam 350 by the optical element 320. This optical element 320 is, for example, a diffractive optical element, and / or a refractive optical element, and / or a reflective optical element, but is not limited thereto. Further, the laser device 300 has a first laser divergence angle θ1 and a second laser divergence angle θ2. The length of this planar laser beam 350 can be controlled by adjusting the magnitude of the angle of the first laser divergence angle θ1. The width of this planar laser beam 350 can be controlled by adjusting the magnitude of the angle of the second laser divergence angle θ2. Here, the angle of the first laser divergence angle θ1 is 1 degree or more, and the angle of the second laser divergence angle θ2 is 1 degree or more.

[0041] As shown in FIGS. 3C to 3E, Example 3 is for illustrative purposes to explain that this planar laser beam 350 sequentially irradiates the electronic devices 120 in the first row, second row, …, eighth row in the first electronic device matrix 150 along the X-axis direction, and is not used to limit the scope of the patent. The electronic devices 120 in the first row, second row, …, eighth row are sequentially peeled off from the first upper surface 100A of the first substrate 100 and bonded to the second upper surface 200A of the second substrate 200. That is, P = 1, 2, …, 8. However, according to other embodiments of the present invention, the planar laser beam 350 sequentially irradiates the electronic devices 120 in the first row, second row, …, fifth row of the first electronic device matrix 150 along the Y-axis direction, and the electronic devices 120 in the first row, second row, …, fifth row are sequentially peeled off from the first upper surface 100A of the first substrate 100 and bonded to the second upper surface 200A of the second substrate 200. That is, Q = 1, 2, …, 5.

[0042] Finally, refer to FIG. 3F. As shown in FIG. 3F, all the electronic devices 120 in this first electronic device matrix 150 are sequentially peeled off from the first upper surface 100A of the first substrate 100 and bonded to the second upper surface 200A of the second substrate 200. Then, as shown in FIG. 3F, a second electronic device matrix 250 formed in an array of 8 rows of electronic devices × 5 columns of electronic devices can be formed on the second upper surface 200A of this second substrate 200.

[0043] Example 4 First, refer to FIG. 4A. As shown in FIG. 4A, a first substrate 100 having opposing first upper surface 100A and first lower surface 100B is provided. On this first upper surface 100A, there are a plurality of electronic devices 120. These electronic devices 120 are respectively arranged along a first direction and a second direction to form a first electronic device matrix 150 formed in an array of M rows of electronic devices × N columns of electronic devices. Here, both M and N are natural numbers greater than 1. These electronic devices 120 are selected from, for example, but not limited to, one or more groups consisting of light-emitting diodes, laser diodes, and semiconductor elements. This semiconductor element is selected from, for example, but not limited to, one or more groups consisting of processors, memory ICs, microelement ICs, logic ICs, and analog ICs.

[0044] As shown in FIG. 4A, the first electronic device matrix 150 of the third embodiment is formed by a plurality of 8 rows of electronic devices 120 arranged in the X-axis direction and a plurality of 5 columns of electronic devices 120 arranged in the Y-axis direction. That is, M = 8, N = 5, the first direction is the X-axis direction, and the second direction is the Y-axis direction. However, according to other embodiments of the present invention, M and N may each be other natural numbers greater than 1, and the first and second directions can also be changed to other set directions as required.

[0045] Next, refer to FIG. 4B. As shown in FIG. 4B, a second substrate 200 provided below the first substrate 100 is provided. This second substrate 200 has opposing second upper surface 200A and second lower surface 200B. The first upper surface 100A faces the second upper surface 200A. This second substrate 200 is, for example, but not limited to, a semiconductor substrate, a ceramic substrate, a metal substrate, a glass substrate, a printed wiring board, or a flexible printed wiring board.

[0046] Next, refer to FIGS. 4C to 4F. As shown in FIGS. 4C to 4E, a laser device 300 is provided. This laser device 300 emits a planar laser beam 350 onto the first substrate 100. This planar laser beam 350 includes a preheating region 350A and a welding region 350B. This planar laser beam 350 sequentially irradiates one row or a plurality of adjacent rows in the first electronic device matrix 150 along the first axial direction with the preheating region 350A and the welding region 350B in sequence, or this planar laser beam 350 sequentially irradiates one row or a plurality of adjacent rows in the first electronic device matrix 150 along the second axial direction with the preheating region 350A and the welding region 350B in sequence. All of the electronic devices 120 irradiated by this planar laser beam 350 are peeled off from the first upper surface 100A of the first substrate 100 and bonded to the second upper surface 200A of the second substrate 200 as shown in FIG. 4F.

[0047] The laser device 300 according to this embodiment includes a laser light source 310 and an optical element 320. The laser beam emitted by this laser light source 310 is converted into a planar laser beam 350 by the optical element 320. This optical element 320 is, for example, a diffractive optical element, and / or a refractive optical element, and / or a reflective optical element, but is not limited thereto. Further, the laser device 300 has a first laser divergence angle θ1 and a second laser divergence angle θ2. The length of this planar laser beam 350 can be controlled by adjusting the magnitude of the angle of the first laser divergence angle θ1. The width of this planar laser beam 350 can be controlled by adjusting the magnitude of the angle of the second laser divergence angle θ2. Here, the angle of the first laser divergence angle θ1 is 1 degree or more, and the angle of the second laser divergence angle θ2 is 1 degree or more.

[0048] As shown in FIGS. 4C to 4E, in the fourth embodiment, this planar laser beam 350 is used for illustrative purposes to sequentially irradiate the electronic devices 120 in the first row, second row, …, eighth row in the first electronic device matrix 150 along the first axial direction with the preheating region 350A and the welding region 350B following one after another, and is not used for limiting the scope of the patent. The electronic devices 120 in the first row, second row, …, eighth row are sequentially peeled off from the first upper surface 100A of the first substrate 100 and bonded to the second upper surface 200A of the second substrate 200. That is, P = 1, 2, …, 8. However, according to another embodiment of the present invention, the planar laser beam 350 sequentially irradiates the electronic devices 120 in the first row, second row, …, eighth row in the first electronic device matrix 150 along the second axial direction with the preheating region 350A and the welding region 350B following one after another, and the electronic devices 120 in the first row, second row, …, fifth row are sequentially peeled off from the first upper surface 100A of the first substrate 100 and bonded to the second upper surface 200A of the second substrate 200. That is, Q = 1, 2, …, 5.

[0049] According to another embodiment of the present invention, this planar laser beam 350 selectively sequentially irradiates one row or a plurality of adjacent rows in the first electronic device matrix 150 along the first axial direction with the preheating region 350A and the welding region 350B following one after another, or this planar laser beam 350 selectively sequentially irradiates one row or a plurality of adjacent rows in the first electronic device matrix 150 along the second axial direction with the preheating region 350A and the welding region 350B following one after another, and the electronic devices 120 irradiated by this planar laser beam 350 are sequentially peeled off from the first upper surface 100A of the first substrate 100 and bonded to the second upper surface 200A of the second substrate 200 as shown in FIG. 4F.

[0050] Finally, refer to FIG. 4F. As shown in FIG. 4F, all the electronic devices 120 in the first electronic device matrix 150 are peeled off in order from the first upper surface 100A of the first substrate 100 and bonded to the second upper surface 200A of the second substrate 200. After that, as shown in FIG. 4F, a second electronic device matrix 250 formed in an array of 8 rows of electronic devices × 5 columns of electronic devices can be formed on the second upper surface 200A of this second substrate 200.

[0051] Although the present invention is disclosed as described in the embodiments above, it is not used to limit the present invention. Any person proficient in this technology can make various changes and refinements without departing from the spirit and scope of the present invention. Therefore, the protection scope of the present invention is in accordance with those defined by the appended claims.

Explanation of Reference Numerals

[0052] 10, 100 First substrate 10A, 100A First upper surface 10B, 100B First lower surface 12, 120 Electronic device 20, 200 Second substrate 20A, 200A Second upper surface 20B, 200B Second lower surface 150 First electronic device matrix 250 Second electronic device matrix 30, 300 Laser device 31, 310 Laser light source 32, 320 Optical element 35, 350 Planar laser light 35A, 350A Preheating region 35B, 350B Welding region θ1 First laser divergence angle θ2 Second laser divergence angle

Claims

1. A method for bonding electronic devices, comprising: providing a first substrate having a first upper surface and a first lower surface facing each other, wherein a plurality of electronic devices are provided on the first upper surface of the first substrate, and the electronic devices are arranged in one row or in rows at intervals from each other; providing a second substrate having a second upper surface and a second lower surface facing each other, disposing the second substrate below the first substrate, and the first upper surface faces the second upper surface; providing a laser device, the laser device emits a planar laser beam with respect to the first substrate, irradiates the planar laser beam onto the electronic devices arranged in one row or one line located on the first upper surface of the first substrate, and can peel the electronic devices from the first upper surface of the first substrate and bond them to the second upper surface of the second substrate steps, a method for bonding electronic devices.

2. The method for bonding an electronic device according to claim 1, wherein the electronic device is selected from one or more groups consisting of a light emitting diode, a laser diode, and a semiconductor element.

3. The method for bonding an electronic device according to claim 2, wherein the semiconductor element is selected from one or more groups consisting of a processor, a memory IC, a microelement IC, a logic IC, and an analog IC.

4. The method for bonding an electronic device according to claim 1, wherein the second substrate is a semiconductor substrate, a ceramic substrate, a metal substrate, a glass substrate, a printed wiring board, or a flexible printed wiring board.

5. The method for bonding an electronic device according to claim 1, wherein the laser device has a first laser divergence angle θ1 and a second laser divergence angle θ2, the length of the planar laser beam can be controlled by adjusting the magnitude of the angle of the first laser divergence angle θ1, and the width of the planar laser beam can be controlled by adjusting the magnitude of the angle of the second laser divergence angle θ2.

6. The method for bonding an electronic device according to claim 5, wherein the angle of the first laser divergence angle θ1 is 1 degree or more, and the angle of the second laser divergence angle θ2 is 1 degree or more.

7. The surface-shaped laser light includes a preheating region and a welding region, and the surface-shaped laser light irradiates an electronic device arranged in a row or a line where the preheating region and the welding region are located in sequence on the first upper surface of the first substrate, and peels the electronic device from the first upper surface of the first substrate and bonds it to the second upper surface of the second substrate. The method for bonding an electronic device according to claim 1.

8. The laser device includes a laser light source and an optical element, and the laser light emitted by the laser light source is converted into surface-shaped laser light by the optical element. The method for bonding an electronic device according to any one of claims 1 to 7.

9. The optical element is a diffractive optical element, and / or a refractive optical element, and / or a reflective optical element. The method for bonding an electronic device according to claim 8.

10. A method for transferring a large number of electronic devices, providing a first substrate having a first upper surface and a first lower surface facing each other, on the first upper surface of the first substrate, there are a plurality of electronic devices, and the electronic devices are respectively arranged along a first axial direction and a second axial direction to form a first electronic device matrix formed by an arrangement of M rows of electronic devices × N columns of electronic devices, where M and N are both natural numbers greater than 1. providing a second substrate having a second upper surface and a second lower surface facing each other, arranging the second substrate below the first substrate, and the first upper surface faces the second upper surface. providing a laser device, the laser device emits surface-shaped laser light to the first substrate, and sequentially irradiates the surface-shaped laser light along the first axial direction to one row or a plurality of adjacent rows in the first electronic device matrix, or irradiates the surface-shaped laser light along the second axial direction to one column or a plurality of adjacent columns in the first electronic device matrix, peeling the electronic device irradiated by the surface-shaped laser light from the first upper surface of the first substrate and bonding it to the second upper surface of the second substrate. After all the electronic devices in the first electronic device matrix are peeled from the first upper surface of the first substrate and bonded to the second upper surface of the second substrate, a second electronic device matrix formed by an arrangement of M rows of electronic devices × N columns of electronic devices is formed on the second upper surface of the second substrate. including steps of transferring a large number of electronic devices.

11. The method for transferring a large number of electronic devices according to claim 10, wherein the electronic device is selected from one or more groups consisting of a light-emitting diode, a laser diode, and a semiconductor device.

12. The method for transferring a large number of electronic devices according to claim 11, wherein the semiconductor device is selected from one or more groups consisting of a processor, a memory IC, a micro device IC, a logic IC, and an analog IC.

13. The method for transferring a large number of electronic devices according to claim 10, wherein the second substrate is a semiconductor substrate, a ceramic substrate, a metal substrate, a glass substrate, a printed wiring board, or a flexible printed wiring board.

14. The laser device has a first laser divergence angle θ1 and a second laser divergence angle θ2, the length of the planar laser beam can be controlled by adjusting the magnitude of the angle of the first laser divergence angle θ1, and the width of the planar laser beam can be controlled by adjusting the magnitude of the angle of the second laser divergence angle θ2. The method for transferring a large number of electronic devices according to claim 10.

15. The method for transferring a large number of electronic devices according to claim 14, wherein the angle of the first laser divergence angle θ1 is 1 degree or more.

16. The method for transferring a large number of electronic devices according to claim 14, wherein the angle of the second laser divergence angle θ2 is 1 degree or more.

17. The planar laser beam includes a preheating region and a welding region, and the planar laser beam sequentially irradiates one row or a plurality of adjacent rows in the first electronic device matrix along the first axial direction with the preheating region and the welding region in sequence, or the planar laser beam sequentially irradiates one row or a plurality of adjacent rows in the first electronic device matrix along the second axial direction with the preheating region and the welding region in sequence, and the electronic device irradiated by the planar laser beam is peeled off from the first upper surface of the first substrate and bonded to the second upper surface of the second substrate. The method for transferring a large number of electronic devices according to claim 10.

18. The laser device includes a laser light source and an optical element, and the laser beam emitted by the laser light source is converted into a planar laser beam by the optical element. The method for transferring a large number of electronic devices according to any one of claims 10 to 17.

19. The transfer method of a large number of electronic devices according to claim 18, wherein the optical element is a diffractive optical element, and / or a refractive optical element, and / or a reflective optical element.

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