Laminated electronic component

Abstract

To suppress deterioration in reliability and mechanical strength of a laminated electronic component due to thinning of an internal electrode, and improve deterioration in insulation resistance due to a crack observed and evaluated by an optical microscope and a high temperature load test.SOLUTION: In a laminated electronic component, internal electrodes 121 and 122 include Ni and an oxide including Ni, and adjust distribution of the oxide including Ni. To be specific, a capacitance forming portion Ac includes: a center portion C1 located at a center; and side portions T1-1, M1-1 located upward, downward, and at a side surface. When a ratio of an area of Ni-containing oxide included in the center portion to an area of the center portion C1 is SC and the ratio of the area of the Ni-containing oxide included in the side portions to the area of the side portions is SMT, 0.9<SMT / SC<1.1 is satisfied.SELECTED DRAWING: Figure 6

Description

Technical Field

[0001] The present invention relates to a multilayer electronic component.

Background Art

[0002] A multilayer ceramic capacitor (MLCC), which is one type of multilayer electronic component, is a chip-type capacitor that is mounted on printed circuit boards of various electronic products such as liquid crystal display devices (LCDs), plasma display panel devices (PDPs), computers, smartphones, and mobile phones, and plays a role in charging or discharging electricity.

[0003] Currently, as electronic devices are becoming smaller, there is a great demand for the miniaturization and high integration of multilayer electronic components. In particular, in the case of multilayer ceramic capacitors (MLCCs) as general-purpose electronic components, various attempts have been made to make the layers thinner and increase the capacitance.

[0004] As the multilayer electronic components become thinner or have higher capacitance, the problem of decreasing reliability of the multilayer electronic components frequently occurs. Therefore, there is a need for structural improvements to the dielectric layer or internal electrodes that do not reduce reliability even in small and high-capacitance multilayer electronic components.

Summary of the Invention

Problems to be Solved by the Invention

[0005] One of several objects of the present invention is to suppress a decrease in the reliability and mechanical strength of a multilayer electronic component due to thinning of a dielectric layer or an internal electrode.

[0006] However, the object of the present invention is not limited to the above-described content and can be more easily understood in the process of explaining specific embodiments of the present invention.

Means for Solving the Problem

[0007] A multilayer electronic component according to an embodiment of the present invention includes a main body including a dielectric layer, and a first internal electrode and a second internal electrode alternately arranged in a first direction with the dielectric layer interposed therebetween, and external electrodes respectively arranged on surfaces facing each other in a second direction perpendicular to the first direction of the main body. The first internal electrode and / or the second internal electrode contains an oxide containing Ni and Ni. A region where the first internal electrode and the second internal electrode overlap in the first direction is a capacitance forming portion. In a cross section of the main body in the first direction and a third direction, the capacitance forming portion includes a center portion located at the center of the capacitance forming portion in the first direction and the third direction, and side portions located on upper and lower portions of the capacitance forming portion in the first direction and both side surfaces of the capacitance forming portion in the third direction. When a ratio of an area of the oxide containing Ni included in the center portion to an area of the center portion is SC, and a ratio of an area of the oxide containing Ni included in the side portion to an area of the side portion is SMT, 0.9 < SMT / SC < 1.1 can be satisfied.

Advantages of the Invention

[0008] One of several advantages of the present invention is to improve the reliability and mechanical strength of the multilayer electronic component by adjusting the degree of oxidation of the internal electrode to uniformly form an oxide containing Ni in the internal electrode.

[0009] However, the various and beneficial advantages and effects of the present invention are not limited to the above-described content, and can be more easily understood in the process of explaining specific embodiments of the present invention.

Brief Description of the Drawings

[0010]

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Embodiments for Carrying Out the Invention

[0011] Hereinafter, embodiments of the present invention will be described with reference to specific embodiments and the accompanying drawings. However, the embodiments of the present invention can be modified into various other forms, and the scope of the present invention is not limited to the embodiments described below. Also, the embodiments of the present invention are provided to more fully explain the present invention to an ordinary technician. Therefore, the shape and size of elements in the drawings can be exaggerated for a clearer explanation, and elements denoted by the same reference numerals in the drawings are the same elements.

[0012] In order to clearly describe the present invention in the drawings, parts not related to the description are omitted. The sizes and thicknesses of the respective components shown in the drawings are arbitrarily shown for convenience of explanation, and thus the present invention is not necessarily limited to those shown in the drawings. For components having the same function within the same scope of idea, the same reference numerals are used for explanation. Further, throughout the specification, when a certain part refers to a certain component as "including", this means that, unless otherwise specified, other components are not excluded, but other components may be further included.

[0013] In the drawings, the first direction can be defined as the direction in which the first and second internal electrodes are alternately arranged with the dielectric layer interposed therebetween or the thickness T direction, and among the second and third directions perpendicular to the first direction, the second direction is the length L direction and the third direction is the width W direction.

[0014] A laminated electronic component 100 according to an embodiment of the present invention includes a main body 110 including a dielectric layer 111 and first internal electrodes 121 and second internal electrodes 122 alternately arranged in the first direction with the dielectric layer interposed therebetween, and external electrodes 130 and 140 respectively arranged on surfaces facing each other in the second direction perpendicular to the first direction of the main body. The first internal electrode and / or the second internal electrode contains an oxide containing Ni and Ni. A region where the first internal electrode and the second internal electrode overlap in the first direction is defined as a capacitance forming portion Ac. In a cross section of the main body in the first direction and the third direction, the capacitance forming portion includes a center portion C1 located at the center of the capacitance forming portion in the first direction and the third direction, and side portions T1-1, T1-2, M1-1, and M1-2 located at the upper and lower portions of the capacitance forming portion in the first direction and both side surfaces of the capacitance forming portion in the third direction. When the ratio of the area of the oxide containing Ni included in the center portion to the area of the center portion is SC, and the ratio of the area of the oxide containing Ni included in the side portion to the area of the side portion is SMT, 0.9 < SMT / SC < 1.1 can be satisfied.

[0015] The main body 110 can have the dielectric layers 111 and the internal electrodes 121 and 122 arranged alternately. Specifically, the first and second internal electrodes 121 and 122 may be arranged alternately with the dielectric layer 111 interposed therebetween.

[0016] There is no particular limitation on the specific shape of the main body 110. However, as shown in the figure, the main body 110 can be formed in a hexahedron shape or a shape similar thereto. Due to the shrinkage of the ceramic powder contained in the main body 110 during the firing process, the main body 110 does not have a hexahedron shape with perfect straight lines, but can substantially have a hexahedron shape.

[0017] The main body 110 can have a first surface 1 and a second surface 2 that face each other in a first direction, a third surface 3 and a fourth surface 4 that are connected to the first and second surfaces 1 and 2 and face each other in a second direction, and a fifth surface 5 and a sixth surface 6 that are connected to the first and second surfaces 1 and 2, are connected to the third and fourth surfaces 3 and 4, and face each other in a third direction. At this time, the first direction can be defined as the direction in which the dielectric layers 111 and the internal electrodes 121 and 122 are arranged alternately.

[0018] The plurality of dielectric layers 111 forming the main body 110 are in a fired state, and the boundaries between adjacent dielectric layers 111 can be integrated to such an extent that they are difficult to confirm without using a scanning electron microscope (SEM).

[0019] According to an embodiment of the present invention, the raw material for forming the dielectric layer 111 is not particularly limited as long as sufficient capacitance can be obtained. For example, a barium titanate-based material, a lead composite perovskite-based material, or a strontium titanate-based material can be used. The barium titanate-based material can include BaTiO3-based ceramic powder. Examples of the ceramic powder include BaTiO3, (Ba 1-x Ca x )TiO3 (0 < x < 1) in which Ca (calcium), Zr (zirconium), etc. are partially solid-solved in BaTiO3, Ba(Ti 1-y Ca y )O3 (0 < y < 1), (Ba 1-xCa x )(Ti 1-y Zr y )O3(0 < x < 1, 0 < y < 1) or Ba(Ti 1-y Z ry )O3(0 < y < 1), etc. can be mentioned.

[0020] In addition, as the raw material for forming the dielectric layer 111, various ceramic additives, organic solvents, binders, dispersants, etc. can be added to powders such as barium titanate (BaTiO3) according to the object of the present invention.

[0021] On the other hand, the average thickness td of the dielectric layer 111 does not need to be particularly limited. For example, the average thickness td of the dielectric layer 111 may be 0.2 μm or more and 2 μm or less.

[0022] When the dielectric layer 111 is formed as a thin film, as in the case where the average thickness td of the dielectric layer 111 is 0.35 μm or less, the reliability of the multilayer electronic component 100 may decrease.

[0023] However, the multilayer electronic component 100 according to an embodiment of the present invention includes an internal electrode containing Ni and an oxide containing Ni. In the cross-section of the main body 110 in the first direction and the third direction, the capacitance forming portion includes a center portion C1 located at the center of the capacitance forming portion in the first direction and the third direction, and side portions T1-1, T1-2, M1-1, M1-2 located at the upper and lower portions of the capacitance forming portion in the first direction and both side surfaces of the capacitance forming portion in the third direction. When the ratio of the area of the oxide containing Ni included in the center portion to the area of the center portion is SC, and the ratio of the area of the oxide containing Ni included in the side portion to the area of the side portion is SMT, by satisfying 0.9 < SMT / SC < 1.1, in order to improve the reliability of the multilayer electronic component, even when the average thickness td of the dielectric layer 111 is 0.35 μm or less, the reliability of the multilayer electronic component 100 can be ensured. That is, when the average thickness td of the dielectric layer 111 is 0.35 μm or less, the reliability improvement effect according to the present invention can be more remarkable.

[0024] The average thickness td of the dielectric layer 111 can mean the average thickness td of the dielectric layer 111 disposed between the first and second internal electrodes 121 and 122.

[0025] The average thickness td of the dielectric layer 111 can be measured by scanning an image of a cross-section in the length and thickness directions (L-T) of the main body 110 with a scanning electron microscope (SEM) at a magnification of 10,000 times. More specifically, in the scanned image, the thickness of one dielectric layer can be measured at 30 points equally spaced in the length direction, and the average value can be measured. The 30 equally spaced points can be specified by the capacitance forming portion Ac. Further, when the measurement of such an average value is extended to 10 dielectric layers to measure the average value, the average thickness of the dielectric layer can be further generalized.

[0026] The main body 110 can include a capacitance forming portion Ac which is a region where the first and second internal electrodes 121 and 122 overlap in the first direction, and cover portions 112 and 113 formed on the upper and lower portions in the first direction of the capacitance forming portion Ac.

[0027] Further, the capacitance forming portion Ac is a portion that contributes to the formation of the capacitance of the capacitor, and can be formed by repeatedly laminating a plurality of first and second internal electrodes 121 and 122 with the dielectric layer 111 interposed therebetween.

[0028] The cover portions 112 and 113 can include an upper cover portion 112 disposed on one surface in the first direction of the capacitance forming portion Ac, and a lower cover portion 113 disposed on the other surface in the first direction of the capacitance forming portion Ac.

[0029] The cover portions 112 and 113 can be formed by laminating a single dielectric layer or two or more dielectric layers in the thickness direction on the upper and lower surfaces of the capacitance forming portion Ac, and can basically play a role of preventing damage to the internal electrodes due to physical or chemical stress.

[0030] The cover parts 112 and 113 do not include internal electrodes and can contain the same material as the dielectric layer 111.

[0031] That is, the cover parts 112 and 113 can contain a ceramic material, for example, a barium titanate (BaTiO3)-based ceramic material.

[0032] On the other hand, the average thickness of the cover parts 112 and 113 does not need to be particularly limited. However, in order to more easily achieve miniaturization and high capacitance of the multilayer electronic component, the average thickness tc of the cover parts 112 and 113 may be 15 μm or less. Further, in the multilayer electronic component 100 according to an embodiment of the present invention, the internal electrode contains Ni and an oxide containing Ni, and in the cross-section of the main body 110 in the first direction and the third direction, the capacitance forming portion includes a center portion C1 located at the center of the capacitance forming portion in the first direction and the third direction, and side portions T1-1, T1-2, M1-1, M1-2 located at the upper and lower portions of the capacitance forming portion in the first direction and both side surfaces of the capacitance forming portion in the third direction. When the ratio SC of the area of the oxide containing Ni included in the center portion to the area of the center portion and the ratio SMT of the area of the oxide containing Ni included in the side portion to the area of the side portion are defined, by satisfying 0.9 < SMT / SC < 1.1, even when the average thickness tc of the cover part is 15 μm or less, the reliability of the multilayer electronic component 100 can be ensured in order to improve the reliability of the multilayer electronic component.

[0033] The average thickness of the cover parts 112 and 113 can mean the size in the first direction, and can be a value obtained by averaging the sizes in the first direction of the cover parts 112 and 113 measured at five equally spaced points at the upper or lower part of the capacitance forming portion Ac.

[0034] Margin parts 114 and 115 can be arranged on the side surface of the capacitance forming portion Ac.

[0035] The margin portions 114 and 115 can include a margin portion 114 disposed on the fifth surface 5 of the main body 110 and a margin portion 115 disposed on the sixth surface 6. That is, the margin portions 114 and 115 can be disposed on both end surfaces in the third direction (width direction) of the main body 110.

[0036] As shown in FIG. 3, the margin portions 114 and 115 can mean the regions between the boundaries of both ends of the first and second internal electrodes 121 and 122 and the main body 110 in the cross-section obtained by cutting the main body 110 in the width-thickness (W-T) direction.

[0037] The margin portions 114 and 115 can basically serve to prevent damage to the internal electrodes due to physical or chemical stress.

[0038] The margin portions 114 and 115 may be formed by applying a conductive paste to form internal electrodes except for the locations where the margin portions are formed on the ceramic green sheet.

[0039] Also, in order to suppress the step caused by the internal electrodes 121 and 122, after cutting so that the internal electrodes after lamination are exposed on the fifth and sixth surfaces 5 and 6 of the main body, a single dielectric layer or two or more dielectric layers are laminated in the third direction (width direction) on both side surfaces of the capacitance forming portion Ac to form the margin portions 114 and 115.

[0040] On the one hand, the widths of the margin portions 114 and 115 do not particularly need to be limited. However, in order to more easily achieve miniaturization and high capacity of the multilayer electronic component, the average width of the margin portions 114 and 115 may be 15 μm or less. Further, in the multilayer electronic component 100 according to an embodiment of the present invention, the internal electrodes contain Ni and an oxide containing Ni, and in the cross sections of the main body 110 in the first direction and the third direction, the capacitance forming portion includes a center portion C1 located at the center of the capacitance forming portion in the first direction and the third direction, and side portions T1-1, T1-2, M1-1, M1-2 located at the upper and lower portions of the capacitance forming portion in the first direction and both side surfaces of the capacitance forming portion in the third direction. When the ratio of the area of the oxide containing Ni included in the center portion to the area of the center portion is SC, and the ratio of the area of the oxide containing Ni included in the side portion to the area of the side portion is SMT, by satisfying 0.9 < SMT / SC < 1.1, even when the average width of the margin portions 114 and 115 is 15 μm or less, the reliability of the multilayer electronic component 100 can be ensured in order to improve the reliability of the multilayer electronic component.

[0041] The average width of the margin portions 114 and 115 can mean the average size of the margin portions 114 and 115 in the third direction, and can be a value obtained by averaging the sizes of the margin portions 114 and 115 in the third direction measured at five equally spaced points on the side surface of the capacitance forming portion Ac.

[0042] The internal electrodes 121 and 122 can be alternately arranged with the dielectric layer 111 in the first direction.

[0043] The internal electrodes 121 and 122 can include the first and second internal electrodes 121 and 122. The first and second internal electrodes 121 and 122 are alternately arranged so as to face each other with the dielectric layer 111 constituting the main body 110 interposed therebetween, and can be connected to the third and fourth surfaces 3 and 4 of the main body 110, respectively. Specifically, one end of the first internal electrode 121 can be connected to the third surface, and one end of the second internal electrode 122 can be connected to the fourth surface.

[0044] The first internal electrode 121 is spaced apart from the fourth surface 4 and exposed through the third surface 3, and the second internal electrode 122 can be spaced apart from the third surface 3 and exposed through the fourth surface 4. A first external electrode 130 is disposed on the third surface 3 of the main body and connected to the first internal electrode 121, and a second external electrode 140 can be disposed on the fourth surface 4 of the main body and connected to the second internal electrode 122.

[0045] That is, the first internal electrode 121 is connected to the first external electrode 130 without being connected to the second external electrode 140, and the second internal electrode 122 is connected to the second external electrode 140 without being connected to the first external electrode 130. Therefore, the first internal electrode 121 can be formed at a certain distance apart on the fourth surface 4, and the second internal electrode 122 can be formed at a certain distance apart on the third surface 3.

[0046] At this time, the first and second internal electrodes 121 and 122 can be electrically separated from each other by a dielectric layer 111 disposed in the middle.

[0047] The main body 110 can be formed by alternately laminating a ceramic green sheet printed with the first internal electrode 121 and a ceramic green sheet printed with the second internal electrode 122 and then firing them.

[0048] The materials for forming the internal electrodes 121 and 122 are not particularly limited, and materials with excellent electrical conductivity can be used. For example, the internal electrodes 121 and 122 can include one or more of nickel (Ni), copper (Cu), palladium (Pd), silver (Ag), gold (Au), platinum (Pt), tin (Sn), tungsten (W), titanium (Ti), and their alloys.

[0049] Further, the internal electrodes 121 and 122 can be formed by printing a conductive paste for internal electrodes containing one or more of nickel (Ni), copper (Cu), palladium (Pd), silver (Ag), gold (Au), platinum (Pt), tin (Sn), tungsten (W), titanium (Ti), and alloys thereof on a ceramic green sheet. As the printing method of the conductive paste for internal electrodes, a screen printing method, a gravure printing method, or the like can be used, but the present invention is not limited thereto.

[0050] Further, the average thickness te of the internal electrodes 121 and 122 does not need to be particularly limited. For example, the average thickness te of the internal electrodes 121 and 122 may be 0.2 μm or more and 2 μm or less.

[0051] When the average thickness of the internal electrodes 121 and 122 is 0.35 μm or less, it may be difficult to ensure the connectivity of the internal electrodes. However, the internal electrodes 121 and 122 according to an embodiment of the present invention contain Ni and an oxide containing Ni and satisfy 0.9 < SMT / SC < 1.1. Therefore, even when the average thickness of the internal electrodes 121 and 122 is 0.35 μm or less, the connectivity of the internal electrodes can be ensured.

[0052] The average thickness te of the internal electrodes 121 and 122 can mean the average thickness te of the internal electrodes 121 and 122.

[0053] The average thickness te of the internal electrodes 121 and 122 can be measured by scanning an image of a cross-section in the length and thickness directions (L-T) of the main body 110 with a scanning electron microscope (SEM) at a magnification of 10,000 times. More specifically, in the scanned image, the thickness of one internal electrode can be measured at 30 points equally spaced in the length direction, and the average value can be measured. The 30 equally spaced points can be specified in the capacitance forming portion Ac. Further, when the measurement of such an average value is extended to 10 internal electrodes and the average value is measured, the average thickness of the internal electrodes can be further generalized.

[0054] With the increase in the capacitance of multilayer electronic components and the thinning of internal electrodes and dielectric layers, there may arise a problem that the strength of the interface between the internal electrode and the dielectric may decrease, which may cause a reduction in the mechanical strength of the multilayer electronic component.

[0055] In addition, there may be a problem that the withstand voltage characteristics of the multilayer electronic component deteriorate due to the thinning of the dielectric layer.

[0056] Therefore, in one embodiment of the present invention, the internal electrodes 121 and 122 contain Ni and an oxide containing Ni, and by adjusting the distribution of the oxide containing Ni, the mechanical strength and the withstand voltage characteristics of the multilayer electronic component can be improved.

[0057] Referring to FIG. 3, it can be confirmed that the internal electrode contains Ni and an oxide containing Ni, and the oxide containing Ni is not concentrated and distributed in a specific region of the capacitance forming portion, but is uniformly distributed.

[0058] Referring to FIG. 6, in the cross sections in the first direction and the third direction of the main body, the capacitance forming portion Ac can include a center portion C1 located at the center in the first direction and the third direction of the capacitance forming portion Ac, and side portions T1-1, T1-2, M1-1, and M1-2 located at the upper and lower portions in the first direction of the capacitance forming portion Ac and both side surfaces in the third direction of the forming portion Ac.

[0059] At this time, in one embodiment of the present invention, when the ratio of the area of the oxide containing Ni included in the center portion C1 to the area of the center portion C1 is SC, and the area of the oxide containing Ni included in the side portions T1-1, T1-2, M1-1, and M1-2 to the area of the side portions T1-1, T1-2, M1-1, and M1-2 is SMT, 0.9 < SMT / SC < 1.1 can be satisfied.

[0060] When SMT / SC does not satisfy 0.9 < SMT / SC < 1.1, the oxide containing Ni is not uniformly distributed in the internal electrodes 121 and 122 and is locally formed in the internal electrodes 121 and 122, so the mechanical strength and withstand voltage characteristics of the multilayer electronic component 100 may be weakened.

[0061] Therefore, in one embodiment of the present invention, by adjusting to satisfy 0.9 < SMT / SC < 1.1 and forming the oxide containing Ni to be uniformly distributed in the internal electrodes 121 and 122, the mechanical strength and withstand voltage characteristics of the multilayer electronic component 100 can be improved.

[0062] In one example, referring to FIG. 6, the center portion C1 can mean a region located at the center in the first direction and the third direction among the regions obtained by dividing the capacitance forming portion Ac into five equal parts in the first direction and five equal parts in the third direction. The side portions T1-1, T1-2, M1-1, and M1-2 can mean the regions M1-1 and M1-2 that are in contact with both end portions in the third direction of the capacitance forming portion Ac and are arranged at the center in the first direction, and the regions T1-1 and T1-2 that are in contact with both end portions in the first direction of the capacitance forming portion Ac and are arranged at the center in the third direction among the regions obtained by dividing the capacitance forming portion Ac into five equal parts in the first direction and five equal parts in the third direction. That is, the area of each of the center portion C1 and the side portions T1-1, T1-2, M1-1, and M1-2 can vary according to the size of the multilayer electronic component 100 or the area of the capacitance forming portion Ac. However, in multilayer electronic components having substantially the same area of the capacitance forming portion Ac, the area of each of the center portion C1 and the side portions T1-1, T1-2, M1-1, and M1-2 can be substantially the same.

[0063] On one hand, among the regions obtained by dividing the capacitance forming portion Ac into five equal parts in the first direction and five equal parts in the third direction, the regions M1-1 and M1-2 that are in contact with both end portions of the capacitance forming portion Ac in the third direction and are arranged at the center in the first direction are defined as margin-side portions. Among the regions obtained by dividing the capacitance forming portion Ac into five equal parts in the first direction and five equal parts in the third direction, the regions T1-1 and T1-2 that are in contact with both end portions of the capacitance forming portion Ac in the first direction and are arranged at the center in the third direction can be defined as cover-side portions. On the other hand, the cross-section along the line III-III' of FIG. 1 shown in FIG. 6 can correspond to the cross-sections in the first direction and the third direction polished up to the 1 / 2 point in the second direction of the main body 110.

[0064] In one embodiment, when the ratio of the area of the oxide containing Ni to the area of the cover-side portions T1-1 and T1-2 is ST, and the ratio of the area of the oxide containing Ni to the area of the margin-side portions M1-1 and M1-2 is SM, 0.9 < ST / SC < 1.1 and 0.9 < SM / SC < 1.1 can be satisfied. Thereby, by more uniformly distributing the oxide containing Ni in the capacitance forming portion Ac, the reliability and the withstand voltage characteristics of the multilayer electronic component 100 can be further improved.

[0065] FIG. 5 corresponds to the cross-section along the line II-II' of FIG. 1, FIG. 6 corresponds to the cross-section along the line III-III' of FIG. 1, and FIG. 7 corresponds to the cross-section along the line IV-IV' of FIG. 1. More specifically, FIG. 5 can represent the cross-sections in the first direction and the third direction polished up to the 1 / 4 point in the second direction of the main body 110, FIG. 6 can represent the cross-sections in the first direction and the third direction polished up to the 1 / 4 (1 / 2) point in the second direction of the main body 110, and FIG. 7 can represent the cross-sections in the first direction and the third direction polished up to the 3 / 4 point in the second direction of the main body 110.

[0066] At this time, the center part of the capacitance forming part Ac in the cross-section in the first direction and the third direction polished up to the 1 / 4 point in the second direction of the main body 110 is defined as the first center part C0, and the center part of the capacitance forming part Ac in the cross-section in the first direction and the third direction polished up to the 2 / 4 point in the second direction of the main body 110 is defined as the second center part C1, and the center part of the capacitance forming part Ac in the cross-section in the first direction and the third direction polished up to the 3 / 4 point in the second direction of the main body 110 can be defined as the third center part C2.

[0067] At this time, when the ratio of the area of the oxide containing Ni included in the first center part C0 to the area of the first center part C0 is SC0, the ratio of the area of the oxide containing Ni included in the second center part C1 to the area of the second center part C1 is SC1, and the ratio of the area of the oxide containing Ni included in the third center part C2 to the area of the third center part C2 is SC2, 0.9 < SC1 / SC0 < 1.1 and 0.9 < SC2 / SC0 < 1.1 can be satisfied. Thereby, not only is the oxide containing Ni uniformly distributed in the first direction or the third direction, but also the oxide is uniformly distributed in the second direction, so that the reliability and breakdown voltage characteristics of the multilayer electronic component 100 can be further improved.

[0068] In one embodiment, the ratio of the area of the oxide containing Ni included in the capacitance forming part Ac to the area of the capacitance forming part Ac can be 0.03 or more and 0.10 or less. Thereby, since the oxide containing Ni is uniformly distributed in the capacitance forming part, the strength, the connectivity of the internal electrodes, the capacitance characteristics, the breakdown voltage characteristics, and the reliability of the multilayer electronic component 100 can be improved.

[0069] When the ratio of the area of the oxide containing Ni included in the capacitance forming part Ac is less than 0.03 or exceeds 0.10, the effect of improving the bonding force between the internal electrodes 121 and 122 and the dielectric layer 111 may be slightly insufficient.

[0070] Therefore, in one embodiment, by adjusting the area ratio of the Ni-containing oxide included in the capacitance forming portion Ac to be 0.03 or more and 0.10 or less, the bonding strength between the internal electrodes 121 and 122 and the dielectric layer 111 can be improved, and the mechanical strength of the multilayer electronic component 100 can be enhanced.

[0071] When the internal electrode contains a Ni-containing oxide, the Ni-containing oxide delays the shrinkage of the internal electrodes 121 and 122, and as a result, the dielectric layer 1110 is also not subjected to shrinkage stress, and the size of the dielectric crystal grains may decrease. That is, by adjusting the area occupied by the Ni-containing oxide in the entire capacitance forming portion, the size of the dielectric crystal grains can be controlled, and thereby, the capacitance characteristics, breakdown voltage characteristics, and reliability of the multilayer electronic component 100 can be improved.

[0072] Specifically, when the area ratio of the Ni-containing oxide included in the capacitance forming portion Ac is less than 0.03, the effect of refining the dielectric crystal grains may be slightly insufficient. When the area ratio of the Ni-containing oxide included in the capacitance forming portion Ac exceeds 0.10, the firing delay of the internal electrode becomes excessive, and the connectivity of the internal electrode may decrease or the thickness of the internal electrode may locally increase. As a result, it may be difficult to ensure the capacitance characteristics, breakdown voltage characteristics, and reliability.

[0073] Therefore, in one embodiment, the area ratio of the Ni-containing oxide included in the capacitance forming portion Ac is adjusted to be 0.03 or more and 0.10 or less, so as to obtain a sufficient effect of refining the dielectric crystal grains, prevent excessive firing delay of the internal electrode, and ensure the capacitance characteristics, breakdown voltage characteristics, and reliability of the multilayer electronic component.

[0074] On the other hand, in one embodiment, the area occupied by the Ni-containing oxide in the capacitance forming portion Ac or the degree of uniform distribution of the Ni-containing oxide in the capacitance forming portion Ac can be controlled by adjusting the oxidation degree of Ni included in the internal electrodes 121 and 122 in the pre-sintering process of the multilayer electronic component.

[0075] Also, in one embodiment, the Ni-containing oxide can be disposed inside the internal electrodes 121 and 122. Thereby, the connectivity of the internal electrodes 121 and 122 can be improved.

[0076] Furthermore, in one embodiment, a part of the Ni-containing oxide can be formed to be in contact with the dielectric layer 111. Also, a part of the Ni-containing oxide can be disposed at the interface between the dielectric layer 111 and the internal electrode. Thereby, the bonding strength between the internal electrodes 121 and 122 and the dielectric layer 111 can be improved.

[0077] The method for measuring the ratio of the area of the Ni-containing oxide included in the capacitance forming portion Ac to the area of the capacitance forming portion Ac is not particularly limited.

[0078] For example, in the cross-sections in the first direction and the third direction polished to the 1 / 2 point in the second direction of the stacked electronic component 100 as in one embodiment, after dividing the capacitance forming portion Ac into a center portion C1, side portions T1-1, T1-2, M1-1, and M1-2, elemental analysis is performed in each region by SEM-EDS (Scanning Electron Microscope-Energy Dispersive X-Ray Spectroscopy). After coloring so that the region where the Ni-containing oxide is formed is distinguished from other regions, it can be measured by calculating the ratio of the area of the region where the Ni-containing oxide is formed to the area of each region. By taking the average value of the ratio of the area of the region where the Ni-containing oxide is formed to the area of each region measured in each region in this way, the value of the ratio of the area of the Ni-containing oxide included in the capacitance forming portion Ac to the area of the capacitance forming portion Ac can be further generalized.

[0079] Referring to FIG. 4, the internal electrode 121 can include one or more electrode portions that are regions containing Ni121a or an oxide 121a containing Ni, and one or more discontinuous portions 121c between the one or more electrode portions 121a. At this time, the connectivity of the internal electrodes 121 and 122 can be represented by the ratio of the total length (L1 + L2...) of the one or more electrode portions to the total length Lt of the internal electrode 121.

[0080] When the ratio of the total length (L1 + L2...) of the one or more electrode portions to the total length Lt of the internal electrode 121 is less than 0.80, it may be difficult to ensure the capacitance characteristics, withstand voltage characteristics, and reliability of the electronic component. Therefore, the ratio of the total length (L1 + L2...) of the one or more electrode portions to the total length Lt of the internal electrode 121 can be 0.80 or more.

[0081] There is no particular need to limit the upper limit value of the ratio of the total length (L1 + L2...) of the one or more electrode portions to the total length Lt of the internal electrode 121, but it may be 0.95 or less.

[0082] In FIG. 4, the connectivity of the internal electrodes has been described with reference to the first internal electrode 121, but the connectivity of the internal electrodes can be defined in the same manner for the second internal electrode 122. Also, the connectivity of the internal electrodes can mean the average value of the values measured with three or more internal electrodes 121 and 122 selected along the first direction of the capacitance forming portion Ac in the cross-sections in the first and third directions polished to the central portion in the second direction of the multilayer electronic component 100.

[0083] In one embodiment, the dielectric layer 111 may include a plurality of dielectric crystal grains, and the average size of the plurality of dielectric crystal grains can be 340 nm or more and 410 nm or less. The average size of the plurality of dielectric crystal grains can be measured and averaged from any 10 or more crystal grains at the center C1 of the capacitance forming portion in the cross sections in the first and third directions polished to the center portion in the second direction of the multilayer electronic component 100, or the area of the crystal grains can be measured in pixels and converted to an equivalent circle diameter, but it is not limited thereto. Further, in order to further generalize the average size of the plurality of dielectric crystal grains, after performing the same measurement at the side portions T1-1, T1-2, M1-1, and M1-2, an average value can be obtained.

[0084] The external electrodes 130 and 140 can be disposed on the third surface 3 and the fourth surface 4 of the main body 110. The external electrodes 130 and 140 can include a first external electrode 130 and a second external electrode 140 that are respectively disposed on the third and fourth surfaces 3 and 4 of the main body 110 and are respectively connected to the first and second internal electrodes 121 and 122.

[0085] In this embodiment, the structure in which the multilayer electronic component 100 has two external electrodes 130 and 140 is described, but the number, shape, etc. of the external electrodes 130 and 140 can be changed according to the form of the internal electrodes 121 and 122 and other purposes.

[0086] On the other hand, the external electrodes 130 and 140 may be formed of any material as long as it has electrical conductivity such as a metal, and a specific material may be determined in consideration of electrical characteristics, structural stability, etc., and may further have a multilayer structure.

[0087] For example, the external electrodes 130 and 140 can include an electrode layer disposed on the main body 110 and a plating layer formed on the electrode layer.

[0088] To give a more specific example of the electrode layer, the electrode layer may be a fired electrode including a conductive metal and glass, or a resin-based electrode including a conductive metal and a resin.

[0089] Further, the electrode layer may be in a form in which a fired electrode and a resin-based electrode are sequentially formed on the main body. Also, the electrode layer may be formed by a method of transferring a sheet containing a conductive metal onto the main body, or may be formed by a method of transferring a sheet containing a conductive metal onto the fired electrode.

[0090] As the conductive metal contained in the electrode layer, a material having excellent electrical conductivity can be used, but it is not particularly limited. For example, the conductive metal may be one or more of nickel (Ni), copper (Cu), and their alloys.

[0091] The plating layer plays a role in improving mounting characteristics. The type of the plating layer is not particularly limited, and it may be a plating layer containing one or more of Ni, Sn, Pd, and their alloys, or may be formed of a plurality of layers.

[0092] More specific examples of the plating layer include that the plating layer may be a Ni plating layer or a Sn plating layer, or may be in a form in which a Ni plating layer and a Sn plating layer are sequentially formed on the electrode layer, or may be in a form in which a Sn plating layer, a Ni plating layer, and a Sn plating layer are sequentially formed. Also, the plating layer may include a plurality of Ni plating layers and / or a plurality of Sn plating layers.

[0093] The size of the multilayer electronic component 100 does not need to be particularly limited.

[0094] However, in order to simultaneously achieve miniaturization and high capacity, the thicknesses of the dielectric layer and the internal electrodes need to be reduced and the number of layers needs to be increased. Therefore, in the multilayer electronic component 100 having a size of 0603 (length × width, 0.6 mm × 0.3 mm) or less, the effect of improving the reliability according to the present invention can be more remarkable.

[0095] Here, the length of the multilayer electronic component 100 can mean the maximum size in the second direction of the multilayer electronic component 100, and the width of the multilayer electronic component 100 can mean the maximum size in the third direction of the multilayer electronic component 100.

[0096] (Experimental Example 1) Table 1 below shows Samples 1 in which the ratio of the area of the oxide containing Ni contained in the capacitance forming portion Ac to the area of the capacitance forming portion Ac is less than 0.03, Sample 2 in which the ratio of the area of the oxide containing Ni contained in the capacitance forming portion Ac to the area of the capacitance forming portion Ac is 0.03 or more and 0.10 or less, and Sample 3 in which the ratio of the area of the oxide containing Ni contained in the capacitance forming portion Ac to the area of the capacitance forming portion Ac exceeds 0.10. The ratio of the area of the oxide containing Ni contained in the center portion (area fraction of the oxide containing Ni (%)) to the area of the center portion in the center portions of the cross sections in the first direction and the third direction is measured with the polishing points in the second direction of the multilayer electronic component being different.

[0097] [Table 1]

[0098] Referring to Table 1 above, it can be confirmed that regardless of the polishing point in the second direction of the multilayer electronic component, the scatter of the area fraction (%) of the oxide containing Ni in the center portions of the cross sections in the first direction and the third direction is within 10%. That is, as in one embodiment, when the ratio of the area of the oxide containing Ni contained in the first center portion C0 to the area of the first center portion C0 is SC0, the ratio of the area of the oxide containing Ni contained in the second center portion C1 to the area of the second center portion C1 is SC1, and the ratio of the area of the oxide containing Ni contained in the third center portion C2 to the area of the third center portion C2 is SC2, it can be confirmed that 0.9 < SC1 / SC0 < 1.1 and 0.9 < SC2 / SC0 < 1.1 are satisfied.

[0099] At this time, in Sample 2 in which the ratio of the area of the oxide containing Ni included in the capacitance forming portion Ac to the area of the capacitance forming portion Ac is 0.03 or more and 0.10 or less, the ratio of the area of the oxide containing Ni included in the region to the area by region in the capacitance forming portion Ac polished to the 2 / 4 (1 / 2) point in the second direction (area fraction (%) of the oxide containing Ni) was measured and shown in Table 2.

[0100] Region 1 and Region 2 correspond to the cover-side portions T1-1 and T1-2 according to one embodiment, Region 3 corresponds to the center portion C1 according to one embodiment, and Regions 4 and 5 correspond to the margin-side portions M1-1 and M1-2 according to one embodiment.

[0101] [Table 2]

[0102] Referring to Table 2, it can be confirmed that in each region, the dispersion of the ratio of the area of the oxide containing Ni included in the region to the area of each region is 10% or less. That is, as in one embodiment, when the ratio of the area of the oxide containing Ni included in the first center portion C0 to the area of the first center portion C0 is SC0, the ratio of the area of the oxide containing Ni included in the second center portion C1 to the area of the second center portion C1 is SC1, and the ratio of the area of the oxide containing Ni included in the third center portion C2 to the area of the third center portion C2 is SC2, it can be confirmed that 0.9 < SC1 / SC0 < 1.1 and 0.9 < SC2 / SC0 < 1.1 are satisfied.

[0103] (Experimental Example 2) FIG. 9 is an image obtained by observing with a scanning electron microscope (SEM) the change in the size of the dielectric crystal grains of the dielectric layer according to the ratio of the area of the oxide containing Ni included in the capacitance forming portion to the area of the capacitance forming portion.

[0104] Fig. 9(a) shows the case where the ratio of the area of the oxide containing Ni included in the capacitance forming portion Ac to the area of the capacitance forming portion Ac is less than 0.03, Fig. 9(b) shows the case where the ratio of the area of the oxide containing Ni included in the capacitance forming portion Ac to the area of the capacitance forming portion Ac is 0.03 or more and 0.10 or less, and Fig. 9(c) shows the case where the ratio of the area of the oxide containing Ni included in the capacitance forming portion Ac to the area of the capacitance forming portion Ac exceeds 0.10.

[0105] It can be confirmed that the dielectric crystal grain size of the dielectric layer is smaller in Fig. 9(b) than in Fig. 9(a).

[0106] In the case of Fig. 9(c), it can be confirmed that the local thickness of the internal electrode increases more and the discontinuous portions also increase compared to Fig. 9(b).

[0107] That is, as in one embodiment, when the ratio of the area of the oxide containing Ni included in the capacitance forming portion Ac to the area of the capacitance forming portion Ac is 0.03 or more and 0.10 or less, the connectivity of the internal electrode can be ensured while reducing the dielectric crystal grain size of the dielectric layer.

[0108] (Experimental Example 3) Fig. 10 is a graph showing the capacitance and breakdown voltage characteristics according to the ratio of the area of the oxide containing Ni included in the capacitance forming portion to the area of the capacitance forming portion.

[0109] Referring to Fig. 10, when the ratio of the area of the oxide containing Ni included in the capacitance forming portion Ac to the area of the capacitance forming portion Ac is 0.03 (3%) or more and 0.10 (10%) or less, there is no decrease in the capacitance characteristics and breakdown voltage characteristics. On the other hand, when the ratio of the area of the oxide containing Ni included in the capacitance forming portion Ac to the area of the capacitance forming portion Ac is less than 0.03 (3%), there is a decrease in the breakdown voltage characteristics, and when the ratio of the area of the oxide containing Ni included in the capacitance forming portion Ac to the area of the capacitance forming portion Ac exceeds 0.10 (10%), it can be confirmed that the capacitance characteristics and breakdown voltage characteristics decrease.

[0110] The capacitance characteristics were measured by using a capacitance measuring instrument under the conditions of 1 kHz and 1 V to obtain the capacitance value (nF), and the BDV characteristics were measured by increasing the voltage by 5 V per second and measuring the breakdown voltage value (V) at the moment when breakdown occurred.

[0111] That is, when the ratio of the area of the oxide containing Ni included in the capacitance forming portion Ac to the area of the capacitance forming portion Ac is 0.03 (3%) or more and 0.10 (10%) or less as in one embodiment, the capacitance characteristics and the withstand voltage characteristics of the multilayer electronic component can be ensured simultaneously.

[0112] (Experimental Example 4) Table 3 below shows the evaluation of the crack occurrence rate and reliability generated through DPA (Destructive Physical Analysis) in Sample 1 where the ratio of the area of the oxide containing Ni included in the capacitance forming portion Ac to the area of the capacitance forming portion Ac is less than 0.03, Sample 2 where the ratio is 0.03 or more and 0.10 or less, and Sample 3 where the ratio exceeds 0.10.

[0113] For DPA (Destructive Physical Analysis), when polishing to the 1 / 2 point in the second direction of the multilayer electronic component with 200 - grit sandpaper, it was determined that cracks occurred when observing the cross - sections in the first direction and the third direction with an optical microscope (OM, Optical Microscope) or the like.

[0114] The reliability evaluation was carried out with the conditions of 150 °C, 250 V, and 4 h as one step. After increasing the voltage by 50 V each time and performing 7 steps, 8 steps under the conditions of 150 °C, 600 V, and 12 h were carried out. When the insulation resistance decreased to 1 / 100 times or less of the initial value, it was evaluated as Fail.

[0115]

Table 3

[0116] Referring to Table 3, it can be confirmed that in the case of Sample 1 and Sample 3, the mechanical strength and reliability are not excellent. In the case of Sample 2, the DPA crack rate is 0%, and it can be confirmed that the number of Fails in the reliability evaluation is 0.

[0117] That is, as in one embodiment, when the ratio of the area of the oxide containing Ni included in the capacitance forming portion Ac to the area of the capacitance forming portion Ac is 0.03 or more and 0.10 or less, it can be confirmed that the mechanical strength and reliability of the multilayer electronic component 100 are improved.

[0118] As described above, the embodiments of the present invention have been described in detail. However, the present invention is not limited by the above-described embodiments and the accompanying drawings, but is limited by the appended claims. Therefore, various forms of substitution, modification, and change are possible by those having ordinary knowledge in the technical field without departing from the technical idea of the present invention described in the claims, and it can be said that these also belong to the scope of the present invention.

[0119] In addition, the expression "one embodiment" used in the present disclosure does not mean the same embodiment, but is provided to emphasize and explain each different unique feature. However, the above-presented one embodiment does not exclude being implemented in combination with the features of another one embodiment. For example, even if the matter described in a specific one embodiment is not described in another one embodiment, it can be understood and related to the description of another one embodiment as long as there is no description contrary to or conflicting with that matter in another one embodiment.

[0120] The terms used in the present disclosure are merely used to explain one embodiment and are not intended to limit the present disclosure. At this time, the singular expression includes plural expressions unless the context clearly indicates a different meaning.

Description of Reference Numerals

[0121] 100: Multilayer electronic component 110: Body 111: Dielectric layer 121, 122: Internal electrodes 130, 140: External electrodes 112, 113: Cover parts 114, 115: Margin parts

Claims

1. A main body including a dielectric layer, and a first internal electrode and a second internal electrode alternately arranged in a first direction with the dielectric layer therebetween; External electrodes respectively disposed on surfaces facing each other in a second direction perpendicular to the first direction of the main body, wherein the first internal electrode and / or the second internal electrode contains an oxide containing Ni and Ni, a region where the first internal electrode and the second internal electrode overlap in the first direction is defined as a capacitance forming portion, in a cross section of the main body in the first direction and a third direction, the capacitance forming portion includes a center portion located at the center of the capacitance forming portion in the first direction and the third direction, and side portions located at upper and lower portions of the capacitance forming portion in the first direction and both side surfaces of the capacitance forming portion in the third direction, when a ratio of an area of the oxide containing Ni included in the center portion to an area of the center portion is SC, and a ratio of an area of the oxide containing Ni included in the side portion to an area of the side portion is SMT, a multilayer electronic component satisfying 0.9 < SMT / SC < 1.

1.

2. The center portion is a region located at the center in the first direction and the third direction among regions obtained by dividing the capacitance forming portion into five equal parts in the first direction and five equal parts in the third direction, The side portion is a region that is in contact with both side surfaces of the capacitance forming portion in the third direction and is arranged at the center in the first direction, and a region that is in contact with both side surfaces of the capacitance forming portion in the first direction and is arranged at the center in the third direction among regions obtained by dividing the capacitance forming portion into five equal parts in the first direction and five equal parts in the third direction. The multilayer electronic component according to Claim 1.

3. Among the side portions, a region located on a side surface of the capacitance forming portion in the first direction is defined as a cover-side portion, and a region located on a side surface of the capacitance forming portion in the third direction is defined as a margin-side portion, when a ratio of an area of the oxide containing Ni included in the cover-side portion to an area of the cover-side portion is ST, and a ratio of an area of the oxide containing Ni to an area of the margin-side portion is SM, The multilayer electronic component according to Claim 1, satisfying 0.9 < ST / SC < 1.1 and 0.9 < SM / SC < 1.

1.

4. The center portion of the capacitance forming portion in the cross sections in the first direction and the third direction polished up to the 1 / 4 point in the second direction of the main body is defined as the first center portion, and the center portion of the capacitance forming portion in the cross sections in the first direction and the third direction polished up to the 2 / 4 point in the second direction of the main body is defined as the second center portion. The center portion of the capacitance forming portion in the cross sections in the first direction and the third direction polished up to the 3 / 4 point in the second direction of the main body is defined as the third center portion. When the ratio of the area of the oxide containing Ni included in the first center portion to the area of the first center portion is SC0, the ratio of the area of the oxide containing Ni included in the second center portion to the area of the second center portion is SC1, and the ratio of the area of the oxide containing Ni included in the third center portion to the area of the third center portion is SC2. The multilayer electronic component according to claim 1, satisfying 0.9 < SC1 / SC0 < 1.1 and 0.9 < SC2 / SC0 < 1.

1.

5. The ratio of the area of the oxide containing Ni included in the capacitance forming portion to the area of the capacitance forming portion is 0.03 or more and 0.10 or less. The multilayer electronic component according to claim 1.

6. The oxide containing Ni is disposed inside the internal electrode. The multilayer electronic component according to claim 1.

7. The oxide containing Ni is in contact with the dielectric layer. The multilayer electronic component according to claim 1.

8. The oxide containing Ni is disposed at the interface between the internal electrode and the dielectric layer. The multilayer electronic component according to claim 1.

9. The internal electrode includes one or more electrode portions that are regions containing the Ni or the oxide containing Ni, and one or more interrupted portions that are interrupted regions between the one or more electrode portions. The ratio of the total length of the plurality of electrode portions to the total length of the internal electrode is 0.80 or more and 0.95 or less. The multilayer electronic component according to claim 1.

10. The dielectric layer includes a plurality of dielectric crystallites. The average crystallite size of the plurality of dielectric crystallites is 340 nm or more and 410 nm or less. The multilayer electronic component according to claim 1.

11. The average thickness of the dielectric layer is 0.35 μm or less. The multilayer electronic component according to claim 1.

12. The average thickness of the internal electrode is 0.35 μm or less. The multilayer electronic component according to claim 1.

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