Method of manufacturing semiconductor device, and sealing body

Abstract

To provide a method of manufacturing a semiconductor device, and a sealing body that can suppress warpage after molding (sealing).SOLUTION: A method of manufacturing a semiconductor device includes a process of supplying an epoxy resin composition 5 onto a laminate 4 comprising a substrate 3 and a semiconductor chip 1 mounted on the substrate under a condition of XC / XS≤0.3. The epoxy resin composition applied onto the laminate includes an epoxy resin, a curative agent, and an inorganic filler, and a part or the whole of a coating pattern is curved, linear, or dotted. The method also includes a process of forming a molding by filling the laminate with the epoxy resin composition and sealing the semiconductor chip by curing the molding to obtain a sealing body 9.SELECTED DRAWING: Figure 1

Description

Technical Field

[0001] The present invention relates to a method for manufacturing a semiconductor device and a sealing body.

Background Art

[0002] For the purpose of improving the performance, reducing the cost, and making the size and weight of semiconductor devices smaller, high-density mounting has been advanced by multi-layerization of semiconductor elements and thinning of packages. Along with this, electronic components having substantially the same size as semiconductor elements such as ICs (Integrated Circuits), that is, CSPs (Chip Size Packages) are widely used.

[0003] Among them, Wafer Level Chip Size Package (WLP) has attracted attention. In WLP, compression molding (compression molding) using a liquid epoxy resin composition is performed at the wafer stage, and after curing this, a large number of semiconductor elements are sealed at once and then singulated. Compared with the method of sealing after singulating semiconductor elements, although WLP has high productivity, there is a problem that the wafer after molding (after sealing) is likely to warp. When warping occurs in the wafer, it has adverse effects such as insufficient fixation of the wafer in subsequent processes such as conveyance, grinding, and singulation, and as a result, it may lead to a decrease in the reliability of the semiconductor device.

[0004] To solve such problems, various sealing materials have been studied. For example, Patent Document 1 discloses a liquid epoxy resin composition for sealing containing a liquid bisphenol type epoxy resin, silicone rubber fine particles, a silicone-modified epoxy resin, an aromatic amine curing agent, an inorganic filler, and an organic solvent. Further, Patent Document 2 discloses a liquid epoxy resin composition for sealing containing a liquid epoxy resin, an aromatic amine curing agent, fine particles of a core-shell silicone polymer composed of a core of a solid silicone polymer and a shell of an organic polymer, an inorganic filler, and an organic solvent.

[0005] Further, in Cited Document 3, it is described that on a laminate including a substrate and a semiconductor element mounted on the substrate, an epoxy resin composition is filled so as to cover the entire substrate to form a molded body, and the molded body is cured to obtain a sealing body.

[0006] Further, in Cited Document 4, after supplying an epoxy resin composition to the entire surface of a mold, a step of mounting a laminate including a support and a semiconductor chip mounted on the support on the mold, filling the entire surface of the laminate with the epoxy resin composition to form a molded body, and curing the molded body to obtain a sealing body is described.

[0007] Further, in Patent Document 5, there is described a resin supply method for supplying a liquid resin to a supply object having a narrow portion, the method including: (a) a step of setting the supply object in a chamber; (b) a step of depressurizing the chamber after the step (a); (c) a step of supplying the resin so as to apply to the narrow portion after the step (b); and (d) a step of pressurizing the chamber after the step (c). Further, in the step of supplying the resin, it is described that the coating pattern of the resin is partially or entirely curved or linear.

Prior Art Documents

Patent Documents

[0008]

Patent Document 1

Patent Document 2

Patent Document 3

Patent Document 4

Patent Document 5

Summary of the Invention

Problems to be Solved by the Invention

[0009] However, even when the epoxy resin compositions described in Patent Documents 1 and 2 are used as a sealing material, warpage may occur in the wafer after molding (after sealing).

[0010] Further, in the methods described in Patent Documents 3 and 4, although the details of the cause are not clear, depending on the components constituting the epoxy resin composition (for example, epoxy resin, curing agent, inorganic filler, etc.), their types, their contents, the thickness of the epoxy resin composition to be applied, and the method of application, warpage may occur in the wafer after molding.

[0011] In addition, since the invention described in Patent Document 5 has no idea of using a specific epoxy resin composition as the material to be supplied, the problem of solving the warpage of the wafer cannot be envisioned in the same invention. Therefore, the method described in Patent Document 5 cannot solve the warpage of the wafer.

[0012] Accordingly, an object of the present invention is to provide a method for manufacturing a semiconductor device capable of suppressing warpage of a support (for example, a wafer) after molding. Another object is to provide a sealed body with reduced warpage.

Means for Solving the Problems

[0013] As a result of intensive studies to achieve the above object, the present inventor has found that warpage after molding can be suppressed by manufacturing a semiconductor device by a method including specific steps. The invention according to the present disclosure has been completed based on these findings.

[0014] That is, in the present disclosure, on a laminate including a support and a semiconductor chip mounted on the support, X C / X SA step of supplying an epoxy resin composition under the condition of ≤0.3, wherein the epoxy resin composition contains an epoxy resin (A), a curing agent (B), and an inorganic filler (C), and the epoxy resin composition is supplied onto the laminate by coating, and a part or all of the coating pattern is curved, linear, or spotted, or, In the mold, X C / X S A step of mounting a laminate including a support and a semiconductor chip mounted on the support on the mold after supplying the epoxy resin composition under the condition of ≤0.3, wherein the epoxy resin composition contains an epoxy resin (A), a curing agent (B), and an inorganic filler (C), and the epoxy resin composition is supplied onto the mold by coating, and a part or all of the coating pattern is curved, linear, or spotted, A step of filling the laminate with the epoxy resin composition to form a molded body, curing the molded body to seal the semiconductor chip, and obtaining a sealed body. Provided is a method for manufacturing a semiconductor device including the above steps. X C : When viewed in plan, a circle that can be drawn within a range of 90% or less of the radius of the support from the center point of the support so as not to include the supplied epoxy resin composition, and is the radius of the circle having the maximum projected area on the support X S : The radius of the support when viewed in plan

[0015] Further, in the present disclosure, on a laminate including a support and a semiconductor chip mounted on the support, Y R / Y F A step of supplying an epoxy resin composition under the condition of ≤0.8, wherein the epoxy resin composition contains an epoxy resin (A), a curing agent (B), and an inorganic filler (C), and the epoxy resin composition is supplied onto the laminate by coating, and a part or all of the coating pattern is curved, linear, or spotted, or, In the mold, Y R / Y FAfter supplying the epoxy resin composition under the condition of ≤0.8, a step of mounting a laminate including a support and a semiconductor chip mounted on the support on the mold, wherein the epoxy resin composition contains an epoxy resin (A), a curing agent (B), and an inorganic filler (C), and the epoxy resin composition is supplied to the mold by coating, and a part or all of the coating pattern is curved, linear, or dotted A step of filling the laminate with the epoxy resin composition to form a molded body, curing the molded body to seal the semiconductor chip, and obtaining a sealed body Provided is a method for manufacturing a semiconductor device including Y F : Projected area of the supplied epoxy resin composition on the support Y R : Projected area of the supplied epoxy resin composition on the support, which exists within a range of 30% or less with respect to the radius of the support from the center point of the support

[0016] Also, in the present disclosure, on a laminate including a support and a semiconductor chip mounted on the support, a step of supplying an epoxy resin composition under the condition of X C / X S ≤0.3, wherein the thickness of the epoxy resin composition is 1 to 20 mm, or A step of supplying an epoxy resin composition to a mold under the condition of X C / X S ≤0.3, and then mounting a laminate including a support and a semiconductor chip mounted on the support on the mold, wherein the epoxy resin composition contains an inorganic filler (C), and the content of the inorganic filler (C) in the epoxy resin composition (100% by mass) is 85% by mass or less A step of filling the laminate with the epoxy resin composition to form a molded body, curing the molded body to seal the semiconductor chip, and obtaining a sealed body Provided is a method for manufacturing a semiconductor device including X C: A circle that can be drawn within a range of 90% or less of the radius of the support from the center point of the support when viewed in plan view, excluding the supplied epoxy resin composition, and having the largest projected area on the support. X S : The radius of the support when viewed in plan view

[0017] Further, in the present disclosure, on a laminate including a support and a semiconductor chip mounted on the support, Y R / Y F A step of supplying an epoxy resin composition under the condition that Y / Y ≤ 0.8, wherein the thickness of the epoxy resin composition is 1 to 20 mm, or In a mold, Y R / Y F A step of supplying an epoxy resin composition under the condition that Y / Y ≤ 0.8 and then mounting a laminate including a support and a semiconductor chip mounted on the support on the mold, wherein the epoxy resin composition contains an inorganic filler (C), and the content of the inorganic filler (C) in the epoxy resin composition (100% by mass) is 85% by mass or less. A step of filling the laminate with the epoxy resin composition to form a molded body, curing the molded body to seal the semiconductor chip, and obtaining a sealed body. Provided is a method for manufacturing a semiconductor device including. Y F : The projected area of the supplied epoxy resin composition on the support Y R : The projected area of the supplied epoxy resin composition on the support, which exists within a range of 30% or less of the radius of the support from the center point of the support.

[0018] Further, in the present disclosure, on a laminate including a support and a semiconductor chip mounted on the support, X C / X SA step of supplying an epoxy resin composition under the condition of ≤0.3, wherein the epoxy resin composition contains, as an epoxy resin (A), at least one selected from the group consisting of glycidylamine type epoxy resins, bisphenol type epoxy resins, and polyalkylene glycol type diepoxy resins, and the content of the epoxy resin (A) in the epoxy resin composition (100% by mass) is 8 to 50% by mass, or In the mold, X C / X S A step of mounting, on the mold, a laminate including a support and a semiconductor chip mounted on the support after supplying the epoxy resin composition under the condition of ≤0.3, wherein the epoxy resin composition contains, as an epoxy resin (A), at least one selected from the group consisting of glycidylamine type epoxy resins, bisphenol type epoxy resins, and polyalkylene glycol type diepoxy resins, and the content of the epoxy resin (A) in the epoxy resin composition (100% by mass) is 8 to 50% by mass, and A step of filling the laminate with the epoxy resin composition to form a molded body, curing the molded body to seal the semiconductor chip, and obtaining a sealed body. A method for manufacturing a semiconductor device including the above is provided. X C : When viewed in plan, it is a circle that can be drawn within a range of 90% or less of the radius of the support from the center point of the support so as not to include the supplied epoxy resin composition, and is the radius of the circle having the maximum projected area on the support. X S : The radius of the support when viewed in plan.

[0019] Further, in the present disclosure, on a laminate including a support and a semiconductor chip mounted on the support, Y R / Y FA step of supplying an epoxy resin composition under the condition of ≤0.8, wherein the epoxy resin composition contains, as an epoxy resin (A), at least one selected from the group consisting of glycidylamine type epoxy resins, bisphenol type epoxy resins, and polyalkylene glycol type diepoxy resins, and the content of the epoxy resin (A) in the epoxy resin composition (100% by mass) is 8 to 50% by mass, or, To the mold, Y R / Y F A step of mounting a laminate including a support and a semiconductor chip mounted on the support on the mold after supplying the epoxy resin composition under the condition of ≤0.8, wherein the epoxy resin composition contains, as an epoxy resin (A), at least one selected from the group consisting of glycidylamine type epoxy resins, bisphenol type epoxy resins, and polyalkylene glycol type diepoxy resins, and the content of the epoxy resin (A) in the epoxy resin composition (100% by mass) is 8 to 50% by mass, and, A step of filling the laminate with the epoxy resin composition to form a molded body, curing the molded body to seal the semiconductor chip, and obtaining a sealed body. To provide a method for manufacturing a semiconductor device including. Y F : The projected area of the supplied epoxy resin composition on the support Y R : The projected area of the supplied epoxy resin composition on the support that exists within a range of 30% or less with respect to the radius of the support from the center point of the support

[0020] Also, in the present disclosure, after supplying the epoxy resin composition to the mold under the condition of X C / X S ≤0.3, a step of mounting a laminate including a support and a semiconductor chip mounted on the support on the mold, wherein the epoxy resin composition contains, as a curing agent (B), at least one selected from the group consisting of amine-based curing agents, acid anhydride-based curing agents, phenol-based curing agents, and imidazole-based curing agents, and the content of the epoxy resin (A) in the epoxy resin composition (100% by mass) is 8 to 50% by mass, and, A step of filling the above laminate with the above epoxy resin composition to form a molded body, curing the above molded body to seal the above semiconductor chip, and obtaining a sealed body; Provided is a method for manufacturing a semiconductor device including the above. X C : When viewed in plan, it is a circle that can be drawn within a range of 90% or less of the radius of the support from the center point of the support so as not to include the supplied epoxy resin composition, and is the radius of the circle having the maximum projected area on the support X S : The radius of the support when viewed in plan

[0021] Also, in the present disclosure, on the mold, after supplying the epoxy resin composition under the condition that Y R / Y F ≦0.8, a step of mounting a laminate including a support and a semiconductor chip mounted on the support on the mold, wherein the epoxy resin composition contains at least one selected from the group consisting of an amine-based curing agent, an acid anhydride-based curing agent, a phenol-based curing agent, and an imidazole-based curing agent as a curing agent (B), and the content of the epoxy resin (A) in the epoxy resin composition (100% by mass) is 8 to 50% by mass; A step of filling the above laminate with the above epoxy resin composition to form a molded body, curing the above molded body to seal the above semiconductor chip, and obtaining a sealed body; Provided is a method for manufacturing a semiconductor device including the above. Y F : The projected area of the supplied epoxy resin composition on the support Y R : The projected area of the supplied epoxy resin composition on the support that exists within a range of 30% or less of the radius of the support from the center point of the support

[0022] Also, in the present disclosure, on a laminate including a support and a semiconductor chip mounted on the support, X C / X SA step of supplying an epoxy resin composition under the condition of ≤0.3, wherein the epoxy resin composition contains an inorganic filler (C) having an average particle diameter of 5.0 μm or less, or To the mold, X C / X S A step of mounting a laminate including a support and a semiconductor chip mounted on the support on the mold after supplying the epoxy resin composition under the condition of ≤0.3, wherein the epoxy resin composition contains an inorganic filler (C) having an average particle diameter of 5.0 μm or less, and A step of filling the laminate with the epoxy resin composition to form a molded body, curing the molded body to seal the semiconductor chip, and obtaining a sealed body. Provided is a method for manufacturing a semiconductor device including X C : When viewed in plan, a circle that can be drawn within a range of 90% or less of the radius of the support from the center point of the support so as not to include the supplied epoxy resin composition, and is the radius of the circle having the maximum projected area on the support X S : The radius of the support when viewed in plan

[0023] Also, in the present disclosure, on a laminate including a support and a semiconductor chip mounted on the support, Y R / Y F A step of supplying an epoxy resin composition under the condition of ≤0.8, wherein the epoxy resin composition contains an inorganic filler (C) having an average particle diameter of 5.0 μm or less, or To the mold, Y R / Y F A step of mounting a laminate including a support and a semiconductor chip mounted on the support on the mold after supplying the epoxy resin composition under the condition of ≤0.8, wherein the epoxy resin composition contains an inorganic filler (C) having an average particle diameter of 5.0 μm or less, and A step of filling the laminate with the epoxy resin composition to form a molded body, curing the molded body to seal the semiconductor chip, and obtaining a sealed body. Provided is a method for manufacturing a semiconductor device including YF : Projected area of the supplied epoxy resin composition on the support Y R : Projected area of the supplied epoxy resin composition on the support, which exists within a range of 30% or less with respect to the radius of the support from the center point of the support

[0024] The above epoxy resin composition preferably contains an epoxy resin (A), a curing agent (B), and an inorganic filler (C).

[0025] The content of the above inorganic filler (C) is preferably 40 to 95% by mass with respect to the epoxy resin composition (100% by mass).

[0026] The above inorganic filler (C) is preferably silica.

[0027] The above epoxy resin composition is preferably a liquid epoxy resin composition at 25°C.

[0028] The viscosity (25°C, B-type viscometer, 10 rpm) of the above epoxy resin composition is preferably 50 to 250 Pa·s.

[0029] The warpage amount of the above encapsulant at 25°C measured by a shadow moire device is preferably 4000 μm or less.

[0030] Further, in the present disclosure, a laminate including a support and a semiconductor chip mounted on the support is an encapsulant encapsulated with a cured product of an epoxy resin composition, Provided is an encapsulant in which the warpage amount of the above encapsulant at 25°C measured by a shadow moire device is 4000 μm or less.

[0031] Further, in the present disclosure, on a laminate including a support and a semiconductor chip mounted on the support, X C / X S ≤ 0.3, or in a mold, X C / X SAfter supplying the epoxy resin composition under the condition of ≤0.3, a step of mounting a laminate including a support and a semiconductor chip mounted on the support on the mold; A step of filling the laminate with the epoxy resin composition to form a molded body, curing the molded body to seal the semiconductor chip, and obtaining a sealed body; Provided is a method for manufacturing a semiconductor device including the above steps. X C : When viewed in plan, it is a circle that can be drawn within a range of 90% or less of the radius of the support from the center point of the support so as not to include the supplied epoxy resin composition, and is the radius of the circle having the maximum projected area on the support X S : The radius of the support when viewed in plan

[0032] Further, in the present disclosure, on a laminate including a support and a semiconductor chip mounted on the support, Y R / Y F A step of supplying the epoxy resin composition under the condition of ≤0.8, or a step of supplying the epoxy resin composition to the mold under the condition of ≤0.8 and then mounting a laminate including a support and a semiconductor chip mounted on the support on the mold; R / Y F A step of filling the laminate with the epoxy resin composition to form a molded body, curing the molded body to seal the semiconductor chip, and obtaining a sealed body; Provided is a method for manufacturing a semiconductor device including the above steps. Provided is a method for manufacturing a semiconductor device including the above steps. Y F : The projected area of the supplied epoxy resin composition on the support Y R : The projected area of the supplied epoxy resin composition on the support that exists within a range of 30% or less of the radius of the support from the center point of the support

[0033] Preferably, the warpage amount of the sealed body at 25°C measured by a shadow moire device is 4000 μm or less.

Advantages of the Invention

[0034] According to the method for manufacturing a semiconductor device of the present disclosure, warpage of the support after molding (sealing) can be suppressed. Therefore, subsequent processes such as conveyance, grinding, and singulation can be efficiently performed, and the reliability of the resulting semiconductor device is improved. Further, since the warpage of the support of the sealing body of the present disclosure is small, it is possible to singulate with high accuracy. Therefore, by using the above sealing body, a highly reliable semiconductor device can be obtained.

Brief Description of Drawings

[0035]

Figure 1

Figure 2

Figure 3

Figure 4

Figure 5

Figure 6

Modes for Carrying Out the Invention

[0036] <Method for Manufacturing a Semiconductor Device> In the present disclosure, a step of supplying an epoxy resin composition under specific conditions onto a laminate including a support and a semiconductor chip mounted on the support, or after supplying the epoxy resin composition under specific conditions, a step of mounting the laminate including the support and the semiconductor chip mounted on the support on the mold, and a step of filling the laminate with the epoxy resin composition to form a molded body, curing the molded body to seal the semiconductor chip, and obtaining a sealing body. A method for manufacturing a semiconductor device including the same is provided.

[0037] One embodiment in the present disclosure is On a laminate including a support and a semiconductor chip mounted on the support, X C / X S Supplying an epoxy resin composition under the condition that X / X ≤ 0.3, or supplying the epoxy resin composition to a mold under the condition that X / X ≤ 0.3, and then mounting a laminate including a support and a semiconductor chip mounted on the support on the mold; C / X S A step of forming a molded body by filling the laminate with the epoxy resin composition, curing the molded body to seal the semiconductor chip, and obtaining a sealed body; A method for manufacturing a semiconductor device including the same. is a method for manufacturing a semiconductor device including the same. X C : When viewed in plan view, it is a circle that can be drawn within a range of 90% or less of the radius of the support from the center point of the support so as not to include the supplied epoxy resin composition, and is the radius of the circle having the maximum projected area on the support. X S : The radius of the support when viewed in plan view.

[0038] In another embodiment in the present disclosure, On a laminate including a support and a semiconductor chip mounted on the support, Y R / Y F Supplying an epoxy resin composition under the condition that Y / Y ≤ 0.8, or supplying the epoxy resin composition to a mold under the condition that Y / Y ≤ 0.8, and then mounting a laminate including a support and a semiconductor chip mounted on the support on the mold (hereinafter referred to as "composition supply step"); R / Y F A step of forming a molded body by filling the laminate with the epoxy resin composition, curing the molded body to seal the semiconductor chip, and obtaining a sealed body (hereinafter referred to as "molding / sealing step"); A method for manufacturing a semiconductor device including the same. is a method for manufacturing a semiconductor device including the same. Y F: Projected area of the supplied epoxy resin composition onto the support Y R : Projected area of the supplied epoxy resin composition onto the support, which exists within a range of 30% or less with respect to the radius of the support from the center point of the support

[0039] The above-described one embodiment in the present disclosure is On a laminate including a support and a semiconductor chip mounted on the support, X C / X S A step of supplying an epoxy resin composition under the condition that ≦0.3, and A step of filling the laminate with the epoxy resin composition to form a molded body, curing the molded body to seal the semiconductor chip, and obtaining a sealed body An embodiment related to a method for manufacturing a semiconductor device including (hereinafter referred to as "Embodiment A1"), or Into a mold, X C / X S After supplying an epoxy resin composition under the condition that ≦0.3, a step of mounting a laminate including a support and a semiconductor chip mounted on the support on the mold, and A step of filling the laminate with the epoxy resin composition to form a molded body, curing the molded body to seal the semiconductor chip, and obtaining a sealed body An embodiment related to a method for manufacturing a semiconductor device including (hereinafter referred to as "Embodiment B1"), is included.

[0040] X C The description of the phrase "a circle that can be drawn within a range of 90% or less with respect to the radius of the support from the center point of the support so as not to include the supplied epoxy resin composition when viewed in plan, and having the maximum projected area onto the support" in X X Cis the radius of a circle, and when viewed in plan view, the circle can be drawn within a range of 90% or less of the radius of the support from the center point of the support so as not to include the supplied epoxy resin composition. That is, the circle is drawn so that the epoxy resin composition does not exist inside it, and the location where the circle is drawn is within a range of 90% or less of the radius of the support from the center point of the support on the support. And the circle is the circle with the maximum projected area when projected onto the support. The "circle that can be drawn within a range of 90% or less of the radius of the support" means that when viewed in plan view, the entire circle exists within a range of 90% or less of the radius of the support. As described later, the shape of the support in plan view is not particularly limited, but for example, it is circular or rectangular. When the shape of the support in plan view is circular, the "center point of the support" means the center when the support is regarded as a circle. When the shape of the support in plan view is rectangular, the "center point of the support" means the center of the circumscribed circle of the support. When the shape of the support in plan view is rectangular, the "radius of the support" means the radius of the circumscribed circle of the rectangular support. The "range within 90% of the radius of the support from the center point of the support" means the range within a distance obtained by multiplying the "radius of the support" by 0.9 from the "center point of the support". That is, it refers to the range surrounded by the circle when a circle is drawn with the "center point of the support" as the center and a length of 0.9 times the "radius of the support" as the radius.

[0041] In the invention according to the above first embodiment, in the composition supply step, the warpage after molding can be suppressed by supplying the epoxy resin composition under the condition that X C / X S ≦0.3. The reason is not clear, but it is considered that by supplying the epoxy resin composition under the above conditions, the components contained in the epoxy resin composition are uniformly filled in the laminate. X C / X SThe range is not particularly limited as long as it is 0.3 or less, preferably 0.25 or less, more preferably 0.2 or less, still more preferably 0.15 or less, particularly preferably 0.1 or less, and most preferably 0.05 or less.

[0042] The invention according to the embodiment of A1 will be described with reference to FIG. 3. FIG. 3 schematically shows a plan view of a laminate including a support and a semiconductor chip mounted on the support, with an epoxy resin composition supplied thereon. 21 is the support, 22 is the supplied (applied) epoxy resin composition, 23 is a circle drawn within a range of 90% or less of the radius of the support, 24 is a circle with the largest projected area on the support, L11 is the radius of the support (X S ), and L12 is the radius of the circle with the largest projected area on the support (X C ). Note that the invention according to the embodiment of B1 is different from the invention according to the embodiment of A1 in that the epoxy resin composition is supplied to a mold instead of a laminate, but the specific method for X C / X S ≤0.3 is the same as that described with reference to FIG. 3.

[0043] In the other embodiments of the present disclosure, a step of supplying an epoxy resin composition onto a laminate including a support and a semiconductor chip mounted on the support under the condition that Y R / Y F ≤0.8, and a step of filling the laminate with the epoxy resin composition to form a molded body, curing the molded body to seal the semiconductor chip, and obtaining a sealed body, which is an embodiment related to a method for manufacturing a semiconductor device (hereinafter referred to as "the embodiment of A2"), or a step of supplying an epoxy resin composition to a mold under the condition that Y R / Y F ≤0.8, then mounting a laminate including a support and a semiconductor chip mounted on the support on the mold, and a step of filling the laminate with the epoxy resin composition to form a molded body, curing the molded body to seal the semiconductor chip, and obtaining a sealed body. Embodiments related to a method for manufacturing a semiconductor device including (hereinafter referred to as "Embodiments of B2"), include.

[0044] Y R The phrase "within a range of 30% or less with respect to the radius of the support from the center point of the support" in will be described. As will be described later, the shape of the support in plan view is not particularly limited, and for example, it is circular or rectangular. When the shape of the support in plan view is circular, the "center point of the support" means the center when the support is regarded as a circle. When the shape of the support in plan view is rectangular, the "center point of the support" means the center of the circumscribed circle of the support. When the shape of the support in plan view is rectangular, the "radius of the support" means the radius of the circumscribed circle of the rectangular support. "Within a range of 30% or less with respect to the radius of the support from the center point of the support" means within a range of a distance obtained by multiplying the "radius of the support" by 0.3 from the "center point of the support". That is, it refers to the range surrounded by the circle when a circle is drawn with the "center point of the support" as the center and a length of 0.3 times the "radius of the support" as the radius.

[0045] In the invention according to the above other embodiments, in the composition supply step, Y R / Y F By supplying the epoxy resin composition under the condition that ≦0.8, warpage after molding can be suppressed. The reason is not clear, but it is considered that by supplying the epoxy resin composition under the above conditions, the components contained in the epoxy resin composition are uniformly filled in the laminate. R / Y F The range of is not particularly limited as long as it is 0.8 or less, but it is preferably 0.7 or less, more preferably 0.6 or less, more preferably 0.5 or less, still more preferably 0.4 or less, particularly preferably 0.3 or less, and most preferably 0.2 or less.

[0046] The invention according to the embodiment of A2 will be described with reference to FIG. 4. FIG. 4 schematically shows a plan view of a laminate including a support and a semiconductor chip mounted on the support, onto which an epoxy resin composition is supplied. 31 is the support, 32 is the supplied (applied) epoxy resin composition, 33 is a circle drawn within a range of 30% or less with respect to the radius of the support, L21 is the radius of the support, and L22 indicates a distance of 30% with respect to the radius of the support. Note that the invention according to the embodiment of A2 is different from the invention according to the embodiment of B2 in that the epoxy resin composition is supplied to a mold instead of a laminate, but Y R / Y F The specific method for the condition of ≤0.8 is the same as that described with reference to FIG. 4.

[0047] When the laminate is supplied (for example, applied at a single point) at a single point (specifically, when X C / X S exceeds 0.3), the effects of the present disclosure will be described by comparison. When filling the laminate with the epoxy resin composition, in the case of single-point supply (for example, single-point application), since the movement distance of the epoxy resin composition is long, due to the difference in fluidity of the components contained (for example, epoxy resin and inorganic filler), the distribution of these components tends to be non-uniform. On the other hand, when the epoxy resin composition is supplied under the condition that X C / X S is within the above range as in the present disclosure, the movement distance of the epoxy resin composition is short, and the distribution of the components becomes uniform. As a result, it is considered that this leads to suppression of warpage after molding.

[0048] When the laminate is supplied (for example, applied at a single point) at a single point to the central portion of the laminate (specifically, when Y R / Y F = 1), the effects of the present disclosure will be described by comparison. When supplying at a single point to the central portion of the laminate, when filling the laminate with the epoxy resin composition, in the case of single-point supply (for example, single-point application), since the movement distance of the epoxy resin composition is long, due to the difference in fluidity of the components contained (for example, epoxy resin and inorganic filler), the distribution of these components tends to be non-uniform. On the other hand, as in the present disclosure, Y R / YF When supplying the epoxy resin composition under the condition that [the relevant parameter] is within the above range, the moving distance of the epoxy resin composition is short, and the distribution of the components becomes uniform. As a result, it is considered that this leads to the suppression of warpage after molding.

[0049] In the coating pattern in the present disclosure, in the above-described one embodiment, X C / X S is not particularly limited as long as it is within the above range. Also, in the above-described other embodiments, Y R / Y F is not particularly limited as long as it is within the above range. For example, it may be uniformly applied (e.g., over the entire surface of the laminate), or a part or all of it may be in a curved shape such as circular and helical; a linear shape such as radial, stripe (a pattern in which parallel lines are arranged at the same interval), and mesh (a pattern in which lines intersect in a grid pattern); or a dotted shape. Among these, when applying uniformly or when a part or all of the coating pattern is linear (especially stripe-shaped), the warpage after molding tends to be smaller. Also, when applying uniformly, the warpage after molding tends to be particularly small. The reason for this is not clear, but the following explanation is possible.

[0050] · Explanation for the case of uniform application The warpage after molding is considered to be caused by the non-uniform filling of the epoxy resin composition into the laminate. For example, when the epoxy resin composition is not uniformly applied to the surface of the laminate, the epoxy resin composition filled into the laminate is also unlikely to be uniform, and the warpage after molding tends to increase. On the other hand, when the epoxy resin composition is uniformly applied to the surface of the laminate, the epoxy resin composition filled into the laminate is also likely to be uniform, and the warpage after molding tends to decrease.

[0051] The method of uniformly applying the epoxy resin composition to the surface of the laminate is not particularly limited, and examples include screen printing, spin coating, spray coating, airbrushing, roller coating, blade coater, coating using a wide line, and manual coating.

[0052] Explanation of when the coating pattern is partially or entirely linear (especially striped) Wafers such as silicon wafers are obtained by slicing a single crystal ingot along the crystal orientation. Therefore, the surface of the wafer has a direction derived from the crystal structure and slicing. When the coating pattern is linear, a part or all of the pattern can be formed along the direction of the wafer surface. The linear pattern is formed along the direction of the wafer surface, which may improve the fluidity of the epoxy resin composition, and the epoxy resin composition is uniformly filled in the laminate, and warpage after molding tends to be reduced. When the coating pattern is striped, the above tendency is particularly noticeable, probably because the linear pattern is formed parallel to the direction of the wafer surface. When the coating pattern is striped, it is preferable that the striped pattern is surrounded by a circular pattern, as shown in Figure 5 (b) and Figure 6 (b). In addition, it is preferable that the center of the circular pattern coincides with the center point of the support, and in this case, the radius of the circular pattern is preferably 60 to 95% of the radius of the support, more preferably 70 to 90%, and even more preferably 80 to 88%. The interval of the stripe pattern is not particularly limited, but is preferably 2 to 20% of the radius of the support, more preferably 3 to 10%, and further preferably 4 to 8%.

[0053] As described above, when the coating pattern is uniform, warping after molding tends to be smaller. On the other hand, when the coating pattern is partially or entirely curved such as circular and spiral, linear such as radial, stripe (pattern in which parallel lines are arranged at equal intervals), and mesh (pattern in which lines intersect in a lattice), or spotted, it is preferable from the viewpoint of efficiently manufacturing a semiconductor device since coating does not require time and labor. When the coating pattern is partially or entirely linear (especially stripe), it is particularly efficient.

[0054] The line width of the epoxy resin composition in the composition supply step of the present disclosure is not particularly limited as long as the effects of the present disclosure are not impaired. For example, it is preferably 0.1 to 30 mm, more preferably 0.1 to 20 mm, still more preferably 0.1 to 15 mm, more preferably 0.1 to 12 mm, more preferably 0.1 to 9 mm, more preferably 0.1 to 6 mm, still more preferably 0.1 to 5 mm, and particularly preferably 0.1 to 4.5 mm. Here, the line width means the width of the supplied epoxy resin composition when viewed in plan parallel to the surface of the support.

[0055] The thickness (height) of the epoxy resin composition in the composition supply step of the present disclosure is not particularly limited as long as the effects of the present disclosure are not impaired. For example, it is preferably 1 to 20 mm, more preferably 1 to 15 mm, still more preferably 1 to 10 mm, and particularly preferably 1 to 5 mm. Here, the thickness (height) of the epoxy resin composition means the thickness (height) of the supplied epoxy resin composition in the direction perpendicular to the surface of the support.

[0056] When the epoxy resin composition is supplied at a single point (for example, applied at a single point) with respect to the center point of the laminate, the thickness of the epoxy resin composition tends to exceed the above range, but as described later, the movement distance of the epoxy resin composition becomes long, which is not preferable.

[0057] The method for manufacturing a semiconductor device of the present disclosure may include at least one selected from the group consisting of a laminate preparation step, a grinding step, and a dicing step, which will be described later, in addition to the composition supply step and the molding and sealing step.

[0058] [Laminate Preparation Step] The stacked body preparation step is a step of preparing a stacked body including a support and a semiconductor chip mounted on the support by mounting the semiconductor chip on the support. In the stacked body, the support and the semiconductor chip may be connected via solder. More specifically, the semiconductor chip may include solder bumps and may be connected to the support via the solder bumps. Also, the support may include solder bumps and may be connected to the semiconductor chip via the solder bumps.

[0059] In this step, the connection between the support and the semiconductor chip is not limited to being via solder. For example, it may be a connection using an adhesive film such as a die attach film (DAF) or an adhesive sheet.

[0060] That is, this step may be a step of mounting a semiconductor chip having solder bumps on a support, connecting the semiconductor chip and the support via the solder bumps, and preparing a stacked body. Also, it may be a step of mounting a semiconductor chip on a support having solder bumps, connecting the semiconductor chip and the support via the solder bumps, and preparing a stacked body. Also, it may be a step of mounting a semiconductor chip having solder bumps on a support having solder bumps, connecting the semiconductor chip and the support via the solder bumps, and preparing a stacked body. Also, it may be a step of mounting and connecting a semiconductor chip on a support via the adhesive film or the adhesive sheet and preparing a stacked body.

[0061] The support is not particularly limited. For example, it includes a silicon wafer, a silicon carbide wafer, a sapphire wafer, a compound semiconductor wafer (gallium phosphide, gallium arsenide, indium phosphide, gallium nitride), and a glass epoxy substrate. The shape of the support in plan view is not particularly limited. For example, it is circular or rectangular.

[0062] [Composition Supply Step] In the present disclosure, the composition supply step is a step of supplying an epoxy resin composition under the specific conditions onto a laminate including a support and a semiconductor chip mounted on the support, or a step of mounting a laminate including a support and a semiconductor chip mounted on the support onto a mold after supplying the epoxy resin composition to the mold under the specific conditions.

[0063] In the composition supply step in the embodiment of A1 or A2, an epoxy resin composition is supplied onto a laminate including a support and a semiconductor chip mounted on the support under the condition that X C / X S ≤ 0.3 or Y R / Y F ≤ 0.8. The composition supply step may include a step of mounting a mold used for forming a molded body in the molding / encapsulation step onto the laminate. That is, the composition supply step may be a step of mounting a mold onto the laminate after supplying an epoxy resin composition onto a laminate including a support and a semiconductor chip mounted on the support under the condition that X C / X S ≤ 0.3 or Y R / Y F ≤ 0.8.

[0064] In the composition supply step in the embodiment of B1 or B2, after supplying an epoxy resin composition to a mold under the condition that X C / X S ≤ 0.3 or Y R / Y F ≤ 0.8, a laminate including a support and a semiconductor chip mounted on the support is mounted onto the mold. Note that the mode of supplying the epoxy resin composition to the mold includes not only directly supplying (for example, coating) the epoxy resin composition to the mold, but also supplying (for example, coating) the epoxy resin composition to a sheet made of paper, plastic, or the like and disposing it on the mold.

[0065] When the present disclosure includes a laminate preparation step, the composition supply step is a step following the laminate preparation step.

[0066] (Epoxy resin composition) The above epoxy resin composition preferably contains an epoxy resin (A), a curing agent (B), and an inorganic filler (C).

[0067] ·Epoxy resin (A) By containing the epoxy resin (A), the above epoxy resin composition can form a cured product having high electrical insulation. The epoxy resin (A) is not particularly limited, and examples thereof include aromatic epoxy resins and aliphatic epoxy resins. The number of epoxy groups in the epoxy resin (A) is not particularly limited as long as it is 1 or more, but it is preferably 2 or more (that is, it is a polyfunctional type epoxy resin). Also, the number of epoxy groups in the epoxy resin (A) is not particularly limited, but for example, it is preferably 5 or less. The epoxy resin (A) can be used alone or in combination of two or more.

[0068] The epoxy resin (A) may be liquid or solid at normal temperature (25°C), but from the viewpoint of the viscosity of the epoxy resin composition, it is preferably liquid at normal temperature (25°C). At normal temperature (25°C), the viscosity of the epoxy resin (A) is, for example, preferably 50,000 mPa·s or less, more preferably 40,000 mPa·s or less, still more preferably 30,000 mPa·s or less, and particularly preferably 20,000 mPa·s or less. Even a solid epoxy resin can be preferably used when it shows a liquid state as a mixture by being used in combination with a liquid epoxy resin. The content of the liquid epoxy resin with respect to the total amount of the epoxy resin (A) is not particularly limited, but for example, it is preferably 50% by mass or more, more preferably 75% by mass or more, still more preferably 90% by mass or more, and particularly preferably 95% by mass or more.

[0069] The above aromatic epoxy resin is not particularly limited as long as it is an epoxy resin having a structure containing an aromatic ring such as a benzene ring. For example, bisphenol type epoxy resins such as bisphenol A type epoxy resin and bisphenol F type epoxy resin, novolak type epoxy resin, fluorene type epoxy resin, biphenyl aralkyl epoxy resin, diepoxy resins such as 1,4-phenyldimethanol diglycidyl ether, biphenyl type epoxy resins such as 3,3',5,5'-tetramethyl-4,4'-diglycidyloxybiphenyl, glycidylamine type epoxy resins such as diglycidylaniline, diglycidyltoluidine, and tetraglycidyl-m-xylylenediamine, aminophenol type epoxy resins such as triglycidyl-p-aminophenol, and naphthalene ring-containing epoxy resins can be mentioned. Among them, glycidylamine type epoxy resins, bisphenol type epoxy resins such as bisphenol A type epoxy resin and bisphenol F type epoxy resin, biphenyl type epoxy resins, aminophenol type epoxy resins, and naphthalene ring-containing epoxy resins are preferred.

[0070] The above aliphatic epoxy resin is not particularly limited. For example, diepoxy resins such as ethylene glycol diglycidyl ether, 1,4-butanediol diglycidyl ether, 1,4-hexanediol diglycidyl ether, 1,6-hexanediol diglycidyl ether, trimethylolpropane diglycidyl ether, glycerin diglycidyl ether, neopentyl glycol diglycidyl ether, polyethylene glycol diglycidyl ether, polytetramethylene glycol diglycidyl ether (especially mono- or polyalkylene glycol type diepoxy resins); triepoxy resins such as trimethylolpropane triglycidyl ether, glycerin triglycidyl ether; alicyclic epoxy resins such as vinyl (3,4-cyclohexene) dioxide, 2-(3,4-epoxycyclohexyl)-5,1-spiro-(3,4-epoxycyclohexyl)-m-dioxane; glycidylamine type epoxy resins such as tetraglycidyl bis(aminomethyl)cyclohexane; hydantoin type epoxy resins such as 3-diglycidyl-5-methyl-5-ethylhydantoin; epoxy resins having a silicone skeleton such as 1,3-bis(3-glycidoxypropyl)-1,1,3,3-tetramethyldisiloxane. Among these, monoalkylene glycol type diepoxy resins such as ethylene glycol diglycidyl ether, 1,4-hexanediol diglycidyl ether, 1,4-butanediol diglycidyl ether, and polyalkylene glycol type diepoxy resins such as polytetramethylene glycol diglycidyl ether, polyethylene glycol diglycidyl ether are preferred. The molecular weight of the aliphatic epoxy resin (when the aliphatic epoxy resin is a polymer, the molecular weight is the number average molecular weight in terms of standard polystyrene by gel permeation chromatography (GPC) using tetrahydrofuran as the elution solvent) is not particularly limited, but for example, 200 to 10,000 is preferred, more preferably 200 to 1,200, still more preferably 200 to 1,000, and particularly preferably 300 to 900.

[0071] The content of the epoxy resin (A) with respect to the above epoxy resin composition (100% by mass) is not particularly limited, but for example, it is preferably 3 to 50% by mass, more preferably 5 to 40% by mass, still more preferably 8 to 30% by mass, and particularly preferably 10 to 25% by mass. When the content of the epoxy resin (A) is within the above range, the thermal expansibility of the cured product is reduced, and the toughness tends to be improved.

[0072] When the epoxy resin (A) contains a bisphenol type epoxy resin, the content of the bisphenol type epoxy resin with respect to the epoxy resin (A) (100% by mass) is not particularly limited, but for example, 0.1 to 80% by mass is preferable, more preferably 1 to 60% by mass, and still more preferably 10 to 50% by mass.

[0073] When the epoxy resin (A) contains a glycidylamine type epoxy resin, the content of the glycidylamine type epoxy resin with respect to the epoxy resin (A) (100% by mass) is not particularly limited, but for example, 0.1 to 80% by mass is preferable, more preferably 1 to 60% by mass, and still more preferably 10 to 50% by mass.

[0074] When the epoxy resin (A) contains a naphthalene ring-containing epoxy resin, the content of the naphthalene ring-containing epoxy resin with respect to the epoxy resin (A) (100% by mass) is not particularly limited, but for example, 0.1 to 80% by mass is preferable, more preferably 1 to 60% by mass, and still more preferably 10 to 50% by mass.

[0075] When the epoxy resin (A) contains a polyalkylene glycol type diepoxy resin, the content of the polyalkylene glycol type diepoxy resin with respect to the epoxy resin (A) (100% by mass) is not particularly limited, but for example, 0.1 to 80% by mass is preferable, more preferably 1 to 60% by mass, and still more preferably 10 to 50% by mass.

[0076] · Curing agent (B) The curing agent (B) is not particularly limited as long as it can initiate, proceed, or accelerate the polymerization of the epoxy resin. Examples thereof include amine-based curing agents, acid anhydride-based curing agents, phenol-based curing agents, and imidazole-based curing agents. The curing agent (B) can be used alone or in combination of two or more kinds.

[0077] Examples of the above amine-based curing agents include aromatic amines such as 4,4'-diamino-3,3'-diethyldiphenylmethane, diethyltoluenediamine, dimethylthiotoluenediamine, methylenedianiline, m-phenylenediamine, 4,4'-diaminodiphenylsulfone, and 3,3'-diaminodiphenylsulfone. Examples of the above acid anhydride-based curing agents include alkylated tetrahydrophthalic anhydrides such as methyltetrahydrophthalic anhydride, methylhexahydrophthalic anhydride, hexahydrophthalic anhydride, phthalic anhydride, dodecenyl succinic anhydride, and methyl nadic anhydride. Examples of the above phenol-based curing agents include phenol novolak resin, cresol novolak resin, naphthol-modified phenol resin, dicyclopentadiene-modified phenol resin, and p-xylene-modified phenol resin. Examples of the above imidazole-based curing agents include 2-methylimidazole, 2-undecylimidazole, 1-cyanoethyl-2-undecylimidazole, 2-heptadecylimidazole, 2-ethyl-4-methylimidazole, 1-cyanoethyl-2-ethyl-4-imidazole, 2-phenylimidazole, and 2-phenyl-4-methylimidazole. Also, as the imidazole-based curing agent, microcapsule-type imidazole-based curing agents are also included.

[0078] The content of the curing agent (B) relative to the above epoxy resin composition (100% by mass) is not particularly limited, but for example, it is preferably 0.1 to 30% by mass, more preferably 0.3 to 20% by mass, still more preferably 0.5 to 15% by mass, and particularly preferably 1 to 12% by mass. When the content of the curing agent (B) is within the above range, the appearance of the cured product tends to be improved. Also, when the content of the curing agent (B) is within the above range, the curing time of the epoxy resin composition can be appropriately adjusted. For example, when compression molding is performed using the epoxy resin composition, the curing time does not become too long, the productivity of electronic components is improved, and warping is suppressed after the epoxy resin composition applied to the wafer on which the semiconductor chip is mounted is cured. Further, the storage stability of the epoxy resin composition is improved.

[0079] · Inorganic filler (C) The inorganic filler (C) is not particularly limited, but it is preferably one having the property of suppressing volume shrinkage (curing shrinkage) caused by the curing reaction of the epoxy resin composition, one having the property of suppressing volume change due to heat (thermal shrinkage) of the cured product, or one having both of these properties. Examples of the inorganic filler (C) include silica, silicon carbide, silicon nitride, alumina (aluminum oxide), aluminum nitride, aluminum hydroxide, aluminum silicate, magnesium silicate, calcium silicate, calcium carbonate, barium sulfate, barium carbonate, titanium oxide, gypsum, potassium titanate, magnesium oxide, magnesium carbonate, zinc oxide, boron nitride, zirconia (zirconium oxide), and inorganic particles whose surfaces are treated with these. The inorganic filler (C) can be used alone or in combination of two or more.

[0080] Among these, as the inorganic filler (C), silica, alumina, aluminum nitride, magnesium oxide, and zinc oxide are preferable, more preferably silica, alumina, and aluminum nitride, and even more preferably silica. This is because when the thermal expansibility of the inorganic filler (C) is high, warping after molding tends to occur. However, since silica has low thermal expansibility, warping after molding tends not to occur.

[0081] The inorganic filler (C) is preferably surface-treated with a coupling agent having a functional group such as an epoxy group, a (meth)acryloyl group, or an amino group from the viewpoint of setting the viscosity of the epoxy resin composition within an appropriate range. Examples of the above coupling agent include silane coupling agents such as 3-glycidoxypropyltrimethoxysilane, 2-(3,4-epoxycyclohexyl)ethyltrimethoxysilane, 3-methacryloxypropyltrimethoxysilane, and N-phenyl-3-aminopropyltrimethoxysilane. For the surface treatment of the inorganic filler (C), one of the above coupling agents can be used alone, or two or more thereof can be used in combination.

[0082] The shape of the inorganic filler (C) is not particularly limited, and examples thereof include spherical (true spherical, substantially true spherical, etc.), polyhedral, rod-shaped (cylindrical, prismatic, etc.), flat plate-shaped, flaky, and irregular shapes. Among these, spherical shape is preferable from the viewpoint of enabling a high filling amount.

[0083] The average particle size of the inorganic filler (C) is not particularly limited. For example, it is preferably 1 nm or more, more preferably 3 nm or more, still more preferably 5 nm or more, still more preferably 10 nm or more, still more preferably 15 nm or more, still more preferably 20 nm or more, still more preferably 25 nm or more, still more preferably 30 nm or more, still more preferably 35 nm or more, still more preferably 40 nm or more, and particularly preferably 45 nm or more. Also, for example, it is preferably 5.0 μm or less, more preferably 3.0 μm or less, still more preferably 2.0 μm or less, still more preferably 1.5 μm or less, still more preferably 1.0 μm or less, still more preferably 0.8 μm or less, and particularly preferably 0.6 μm or less. When the average particle size of the inorganic filler (C) is within the above range, the epoxy resin composition has an appropriate viscosity, and there is a tendency that the problem of warpage after molding is less likely to occur. In the present specification, the method for measuring the average particle size of the inorganic filler (C) is not particularly limited. For example, it can be measured using a laser diffraction / scattering particle size distribution measuring device (product name: LS 13 320, manufactured by Beckman Coulter, Inc.).

[0084] The maximum particle size of the inorganic filler (C) is not particularly limited. For example, it is preferably 5 nm or more, more preferably 10 nm or more, still more preferably 20 nm or more, still more preferably 40 nm or more, still more preferably 100 nm or more, still more preferably 200 nm or more, still more preferably 250 nm or more, still more preferably 300 nm or more, still more preferably 400 nm or more, and particularly preferably 500 nm or more. Also, for example, it is preferably 20.0 μm or less, more preferably 10.0 μm or less, still more preferably 5.0 μm or less, still more preferably 3.0 μm or less, still more preferably 1.0 μm or less, still more preferably 0.8 μm or less, and particularly preferably 0.5 μm or less.

[0085] The content of the inorganic filler (C) relative to the above epoxy resin composition (100% by mass) is not particularly limited. For example, it is preferably 40% by mass or more, more preferably 50% by mass or more, and even more preferably 60% by mass or more. When the content of the inorganic filler (C) is within the above range, warping after molding tends to be suppressed.

[0086] The content of the inorganic filler (C) relative to the above epoxy resin composition (100% by mass) is not particularly limited. However, from the viewpoints of ensuring an appropriate viscosity as an epoxy resin composition, reducing warping after molding, and improving workability when preparing the epoxy resin composition, it is preferably 95% by mass or less, more preferably 90% by mass or less, even more preferably 88% by mass or less, and particularly preferably 85% by mass or less.

[0087] In a certain aspect of the present disclosure, the content of the inorganic filler (C) relative to the above epoxy resin composition (100% by mass) is preferably 65 to 88% by mass, more preferably 68 to 88% by mass, and even more preferably 70 to 85% by mass.

[0088] · Other components The above epoxy resin composition may contain components other than the epoxy resin (A), the curing agent (B), and the inorganic filler (C) (hereinafter referred to as "other components (D)"). Examples of the other components (D) include curable compounds other than the epoxy resin (A), thermoplastic resins such as polyethylene resin, polyester resin, polyurethane resin, and polyamide resin, coupling agents, ion trap agents, leveling agents, antioxidants, defoaming agents, flame retardants, colorants, reactive diluents, elastomers, solvents, and the like. The other components (D) can be used alone or in combination of two or more.

[0089] The content of the other components (D) relative to the above epoxy resin composition (100% by mass) is not particularly limited as long as the effects of the present disclosure are not impaired. For example, it is preferably 0.001 to 10% by mass, more preferably 0.01 to 5% by mass, and even more preferably 0.1 to 3% by mass.

[0090] · Physical properties and manufacturing method of epoxy resin composition The viscosity of the above epoxy resin composition (25 °C, B-type viscometer, 10 rpm) is not particularly limited. For example, 1 to 500 Pa·s is preferable, more preferably 5 to 400 Pa·s, still more preferably 10 to 300 Pa·s, particularly preferably 50 to 250 Pa·s, and most preferably 100 to 200 Pa·s. When the viscosity is within the above range, warping after molding is suppressed, and workability tends to improve.

[0091] The above epoxy resin composition can be prepared by known and commonly used methods. For example, the epoxy resin (A), curing agent (B), inorganic filler (C), and, if necessary, other components (D) are introduced into an appropriate mixer simultaneously or separately, and heated if necessary to melt while stirring and mixing to obtain the above epoxy resin composition. When the epoxy resin (A) is solid, it is preferably liquefied or fluidized by heating for mixing. When it is difficult to uniformly disperse the inorganic filler (C) in the epoxy resin composition, the epoxy resin and the inorganic filler (C) are heated and mixed to uniformly disperse the inorganic filler (C) in the epoxy resin, then cooled if necessary, and further components such as the curing agent (B) are mixed to prepare the above epoxy resin composition.

[0092] The above mixer is not particularly limited, and examples include a roll mill, a Lyka machine, a Henschel mixer, a tumbler, a self-revolving and planetary mill, a planetary mixer, etc. equipped with a stirring device and a heating device. The mixing ratio of each component is appropriately set according to the content ratio of each component in the epoxy resin composition.

[0093] [Molding and encapsulation process] The forming and encapsulating step is a step of filling the above laminate with the above epoxy resin composition to form a molded body, curing the above molded body to encapsulate the above semiconductor chip, and obtaining an encapsulated body. This step may include two steps: a step of filling the above laminate with the above epoxy resin composition to form a molded body (forming step), and a step of curing the molded body obtained by the forming step to encapsulate the above semiconductor chip and obtaining an encapsulated body (encapsulating step).

[0094] The method for forming the molded body is not particularly limited. For example, a mold attached to the laminate is pushed into the direction of the laminate (support) (hereinafter, may be described as "compression"), and if necessary, the inside of the mold is depressurized to form a compression molded body containing the above laminate and epoxy resin composition. In this step, when depressurizing the inside of the mold, the depressurization may be performed before compression or may be performed simultaneously with compression. That is, the forming step can be rephrased as a step of filling the laminate (semiconductor chip) with the epoxy resin composition by compression and / or depressurization. In addition, in the compression of this step, instead of pushing the mold into the direction of the laminate (support), a mode of pushing the laminate (support) into the direction of the mold may be adopted, or a mode of narrowing the mold and the laminate (support) with each other may be adopted.

[0095] As a method for forming the molded body, for example, using a molding device, the epoxy resin composition whose viscosity is reduced by heating as necessary is depressurized, and the laminate is encapsulated with the above epoxy resin composition to obtain a molded body. When the viscosity of the epoxy resin composition is reduced by heating, the temperature is not particularly limited. For example, it is preferably 30 to 200 °C, more preferably 40 to 150 °C.

[0096] The pressure reduction rate during compression molding is not particularly limited, but for example, it is preferably 10 to 350 torr / second, more preferably 50 to 330 torr / second, and even more preferably 150 to 310 torr / second. Here, the "pressure reduction rate" is the pressure reduction rate represented by the following formula (S). The units of the initial pressure and the pressure reduction limit pressure are "torr", the unit of the pressure reduction limit pressure reaching time is "second", and the pressure reduction limit pressure is set as a change within 5 torr / second. When the pressure is reduced, the pressure drops rapidly, but when the pressure is reduced to a certain extent, the rate of pressure drop decreases. When the rate of pressure drop becomes 5 torr or less per second, it is regarded as reaching the pressure reduction limit pressure. (Pressure reduction rate) = (Initial pressure - Pressure reduction limit pressure) / (Pressure reduction limit pressure reaching time) Formula (S)

[0097] When curing the above-mentioned molded body to seal the above-mentioned semiconductor chip, the curing of the epoxy resin composition may be carried out by heating. The curing temperature is not particularly limited, but for example, it is preferably 110 to 200 °C, more preferably 120 to 150 °C. The curing time is not particularly limited, but for example, 30 minutes to 7 hours is preferable, more preferably 1 to 6 hours, even more preferably 1 to 4 hours, and particularly preferably 1 to 2 hours.

[0098] [Grinding process] The grinding process is a process of grinding the sealing material portion on the surface on the semiconductor chip side to flatten or thin the sealed body obtained by the molding and sealing process, and exposing a part of the semiconductor chip as necessary. The method of grinding treatment is not particularly limited, and commercially available grinding wheels and grinding devices can be used.

[0099] (Sealed body) The sealed body is a sealed body in which a laminate including a support body and a semiconductor chip mounted on the support body is sealed with a cured product of an epoxy resin composition. The above-mentioned sealed body may be obtained through the above-mentioned molding and sealing process, or may be obtained through the above-mentioned grinding process.

[0100] In the above-mentioned sealing body, the warpage amount of the sealing body at 25°C measured by a shadow moire device is not particularly limited. For example, it is preferably 4000 μm or less, more preferably 3900 μm or less, still more preferably 3800 μm or less, particularly preferably 3700 μm or less, and most preferably 3600 μm or less. Also, the warpage amount is not particularly limited. For example, it exceeds 0 μm, is 1 μm or more, 10 μm or more, 50 μm or more, 100 μm or more, 200 μm or more, 300 μm or more. The warpage amount can be measured, for example, by the method described in the following examples.

[0101] In the above-mentioned sealing body, the improvement rate (%) of the warpage of the sealing body at 25°C measured by a shadow moire device is not particularly limited. For example, it is preferably 3% or more, more preferably 5% or more, still more preferably 8% or more, particularly preferably 10% or more, and most preferably 14% or more. Note that the improvement rate (%) of the warpage can be calculated by the following formula. Improvement rate (%) of warpage = [1 - (warpage amount of the target sealing body) / (warpage amount when the coating method is single-point coating)] × 100

[0102] [Dicing process] The dicing process is a process of dicing the sealing body obtained by the molding and sealing process or the sealing body ground by the grinding process. The dicing process may be a process of dicing the sealing body after removing the sealing body from the above-mentioned mold. In the dicing process, the gaps between a plurality of semiconductor elements mounted on the above-mentioned support and sealed with a cured product of an epoxy resin composition are cut using means such as a dicing blade or a laser to obtain a semiconductor device. The method of dicing is not particularly limited, and a commercially available dicing device can be used.

[0103] (Semiconductor device) The semiconductor device of the present disclosure includes a support, a semiconductor element mounted on the support, and a cured product of the epoxy resin composition that seals the semiconductor element. The semiconductor device is preferably a flip-chip type semiconductor device. The flip-chip type semiconductor device has a structure in which the support and the semiconductor element are connected via bumps (bump electrodes). Further, in the semiconductor device, the gap between the semiconductor element and the support is sealed by a cured product (sealing body) of the epoxy resin composition.

[0104] Hereinafter, embodiments of a method for manufacturing a semiconductor device will be described with reference to FIGS. 1 and 2, but the invention according to the present disclosure is not limited thereto.

[0105] ·Regarding FIG. 1 (corresponding to the embodiments of A1 and A2) Mount a semiconductor chip 1 having solder bumps 2 on one surface on a support 3, and prepare a laminate 4 including the semiconductor chip 1, the solder bumps 2, and the support 3 in this order (laminate preparation step, (a) of FIG. 1). An epoxy resin composition 5 is applied onto the semiconductor chip 1 of the laminate 4, X C / X S ≦0.3 [X C : When viewed in plan, it is a circle that can be drawn within a range of 90% or less with respect to the radius of the support from the center point of the support so as not to include the supplied epoxy resin composition, and is the radius of the circle having the maximum projected area on the support, X S : When viewed in plan, the radius of the support, or Y R / Y F ≦0.8 [Y F : The projected area of the supplied epoxy resin composition on the support, Y R : Under the condition that the projected area of the supplied epoxy resin composition on the support exists within a range of 30% or less with respect to the radius of the support from the center point of the support, after supplying using a nozzle 6, a mold 7 is attached (composition supply step, (b) and (c) of FIG. 1). Push the mounted mold 7 in the direction of the support 3, and if necessary, reduce the pressure inside the mold 7 to form a compression molded body 8 containing the laminate 4 and the epoxy resin composition 5 (molding step, (d) in FIG. 1). In this step, instead of pushing the mold 7 in the direction of the support 3, the support 3 may be pushed in the direction of the mold 7, or a mode of narrowing the mold 7 and the support 3 with respect to each other may be adopted. By thermally curing the compression molded body 8 to seal the semiconductor chip 1, a sealing body 9 is formed (sealing step, (e) in FIG. 1). After removing the mold 7, the sealing body 9 including the semiconductor chip 1 is separated into individual pieces (separation step, (f) and (g) in FIG. 1). Example 1 described later is a disclosure corresponding to this embodiment.

[0106] ·Regarding FIG. 2 (corresponding to the embodiments of B1 and B2) Mount a semiconductor chip 11 having solder bumps 12 on one surface on the support 13, and prepare a laminate 14 including the semiconductor chip 11, the solder bumps 12, and the support 13 in this order (laminate preparation step, (a) in FIG. 2). In the mold 17, X C / X S ≦0.3 [X C : When viewed in plan, a circle that can be drawn within a range of 90% or less of the radius of the support from the center point of the support so as not to include the supplied epoxy resin composition, and is the radius of the circle having the maximum projected area on the support, X S : When viewed in plan, the radius of the support, or Y R / Y F ≦0.8 [Y F : The projected area of the supplied epoxy resin composition on the support, Y R : Under the condition that the projected area of the supplied epoxy resin composition on the support exists within a range of 30% or less of the radius of the support from the center point of the support, after supplying the epoxy resin composition 15 using the nozzle 16, the laminate 14 is mounted on the mold 17 (composition supply step, (b) and (c) in FIG. 2). Reduce the pressure inside the mold 17 to form a compression molded body 18 containing the laminate 14 and the epoxy resin composition 15 (molding step, (d) in FIG. 2). By thermosetting the compression molded body 18 to seal the semiconductor chip 11, a sealing body 19 is formed (sealing step, (e) of FIG. 2). After removing the mold 17, the sealing body 19 including the semiconductor chip is separated into individual pieces (separation step, (f) and (g) of FIG. 1). Example 2 described later is a disclosure corresponding to this embodiment.

[0107] (Example of Embodiment A1) · Embodiment A1-1 In the embodiment of A1, in the step of supplying the epoxy resin composition, the epoxy resin composition contains an epoxy resin (A), a curing agent (B), and an inorganic filler (C), and the epoxy resin composition is supplied onto the laminate by coating. Further, the coating pattern in which part or all of it is curved, linear, or dotted is referred to as Embodiment A1-1.

[0108] That is, Embodiment A1-1 is a step of supplying an epoxy resin composition onto a laminate including a support and a semiconductor chip mounted on the support under the condition of X C / X S ≤0.3, wherein the epoxy resin composition contains an epoxy resin (A), a curing agent (B), and an inorganic filler (C), and the epoxy resin composition is supplied onto the laminate by coating, and the coating pattern is partially or entirely curved, linear, or dotted. A step of filling the laminate with the epoxy resin composition to form a molded body, curing the molded body to seal the semiconductor chip, and obtaining a sealing body. It is a method for manufacturing a semiconductor device including the above steps.

[0109] In Embodiment A1-1, in the step of supplying the epoxy resin composition, when warping of the support occurs due to the supplied epoxy resin composition containing an epoxy resin (A), a curing agent (B), and an inorganic filler (C), the problem of suppressing warping is solved by supplying the epoxy resin composition under the above specific conditions.

[0110] · Embodiment A1-2 In the embodiment of A1, in the step of supplying the epoxy resin composition, the embodiment in which the thickness of the epoxy resin composition is 1 to 20 mm is referred to as Embodiment A1-2.

[0111] That is, Embodiment A1-2 is such that on a laminate including a support and a semiconductor chip mounted on the support, X C / X S a step of supplying an epoxy resin composition under the condition that X / X ≤ 0.3, wherein the thickness of the epoxy resin composition is 1 to 20 mm, a step of filling the laminate with the epoxy resin composition to form a molded body, curing the molded body to seal the semiconductor chip, and obtaining a sealed body, and a method for manufacturing a semiconductor device including the above steps.

[0112] In Embodiment A1-2, in the step of supplying the epoxy resin composition, when warping of the support occurs due to the thickness of the supplied epoxy resin composition being 1 to 20 mm, the problem of suppressing warping is solved by supplying the epoxy resin composition under the above specific conditions.

[0113] · Embodiment A1-3 In the embodiment of A1, in the step of supplying the epoxy resin composition, the epoxy resin composition as epoxy resin (A) includes at least one selected from the group consisting of glycidylamine type epoxy resin, bisphenol type epoxy resin, and polyalkylene glycol type diepoxy resin, and the content of epoxy resin (A) with respect to the epoxy resin composition (100% by mass) is 8 to 50% by mass, and this is referred to as Embodiment A1-3.

[0114] That is, Embodiment A1-3 is such that on a laminate including a support and a semiconductor chip mounted on the support, X C / X SA step of supplying an epoxy resin composition under the condition of ≤0.3, wherein the epoxy resin composition contains, as an epoxy resin (A), at least one selected from the group consisting of glycidylamine type epoxy resins, bisphenol type epoxy resins, and polyalkylene glycol type diepoxy resins, and the content of the epoxy resin (A) in the epoxy resin composition (100% by mass) is 8 to 50% by mass. A step of filling the laminate with the epoxy resin composition to form a molded body, curing the molded body to seal the semiconductor chip, and obtaining a sealed body. A method for manufacturing a semiconductor device including the above steps.

[0115] In Embodiment A1-3, in the step of supplying the epoxy resin composition, when the supplied epoxy resin composition contains, as an epoxy resin (A), at least one selected from the group consisting of glycidylamine type epoxy resins, bisphenol type epoxy resins, and polyalkylene glycol type diepoxy resins, and the content of the epoxy resin (A) in the epoxy resin composition (100% by mass) is 8 to 50% by mass, resulting in warping of the support, the problem of suppressing warping is solved by supplying the epoxy resin composition under the above specific conditions.

[0116] · Embodiment A1-4 In the embodiment of A1, the epoxy resin composition in the step of supplying the epoxy resin composition, which contains an inorganic filler (C) having an average particle size of 5.0 μm or less, is referred to as Embodiment A1-4.

[0117] That is, Embodiment A1-4 is a step of supplying an epoxy resin composition under the condition of X C / X S ≤0.3, wherein the epoxy resin composition contains an inorganic filler (C) having an average particle size of 5.0 μm or less. A step of filling the laminate with the epoxy resin composition to form a molded body, curing the molded body to seal the semiconductor chip, and obtaining a sealed body. A method for manufacturing a semiconductor device including the same.

[0118] In Embodiment A1-4, in the step of supplying an epoxy resin composition, when warpage of the support occurs due to the supplied epoxy resin composition containing an inorganic filler (C) having an average particle size of 5.0 μm or less, the problem of suppressing warpage is solved by supplying the epoxy resin composition under the above specific conditions.

[0119] (Example of Embodiment B1) · Embodiment B1-1 In the embodiment of B1, in the step of supplying an epoxy resin composition, the epoxy resin composition contains an epoxy resin (A), a curing agent (B), and an inorganic filler (C), and the epoxy resin composition is supplied onto the laminate by coating. Further, the coating pattern is such that part or all of it is curved, linear, or spot-shaped, and this is referred to as Embodiment B1-1.

[0120] That is, Embodiment B1-1 is a step of supplying an epoxy resin composition to a mold under the condition of X C / X S ≤ 0.3, and then mounting a laminate including a support and a semiconductor chip mounted on the support on the mold. The epoxy resin composition contains an epoxy resin (A), a curing agent (B), and an inorganic filler (C), and the epoxy resin composition is supplied to the mold by coating. The coating pattern is such that part or all of it is curved, linear, or spot-shaped. A step of filling the laminate with the epoxy resin composition to form a molded body, curing the molded body to seal the semiconductor chip, and obtaining a sealed body. A method for manufacturing a semiconductor device including the same.

[0121] In Embodiment B1-1, in the step of supplying the epoxy resin composition, when warping of the support occurs due to the supplied epoxy resin composition containing an epoxy resin (A), a curing agent (B), and an inorganic filler (C), the problem of suppressing warping is solved by supplying the epoxy resin composition under the above specific conditions.

[0122] · Embodiment B1-2 In the embodiment of B1, in the step of supplying the epoxy resin composition, the epoxy resin composition contains an inorganic filler (C), and the content of the inorganic filler (C) with respect to the above epoxy resin composition (100% by mass) is 85% by mass or less, which is referred to as Embodiment B1-2.

[0123] That is, Embodiment B1-2 is a step of supplying an epoxy resin composition to a mold under the condition of X C / X S ≦0.3, and then mounting a laminate including a support and a semiconductor chip mounted on the support on the mold, wherein the epoxy resin composition contains an inorganic filler (C), and the content of the inorganic filler (C) with respect to the above epoxy resin composition (100% by mass) is 85% by mass or less. A step of filling the laminate with the epoxy resin composition to form a molded body, curing the molded body to seal the semiconductor chip, and obtaining a sealed body. It is a method for manufacturing a semiconductor device including.

[0124] In Embodiment B1-2, in the step of supplying the epoxy resin composition, when warping of the support occurs due to the supplied epoxy resin composition containing an inorganic filler (C) and the content of the inorganic filler (C) with respect to the epoxy resin composition (100% by mass) being 85% by mass or less, the problem of suppressing warping is solved by supplying the epoxy resin composition under the above specific conditions.

[0125] · Embodiment B1-3 In the embodiment of B1, in the step of supplying the epoxy resin composition, the epoxy resin composition contains, as the epoxy resin (A), at least one selected from the group consisting of glycidylamine type epoxy resins, bisphenol type epoxy resins, and polyalkylene glycol type diepoxy resins, and the content of the epoxy resin (A) with respect to the epoxy resin composition (100% by mass) is 8 to 50% by mass, which is referred to as embodiment B1-3.

[0126] That is, in embodiment B1-3, after supplying the epoxy resin composition to the mold under the condition of X C / X S ≤0.3, a step of mounting a laminate including a support and a semiconductor chip mounted on the support on the mold, wherein the epoxy resin composition contains, as the epoxy resin (A), at least one selected from the group consisting of glycidylamine type epoxy resins, bisphenol type epoxy resins, and polyalkylene glycol type diepoxy resins, and the content of the epoxy resin (A) with respect to the epoxy resin composition (100% by mass) is 8 to 50% by mass; a step of filling the laminate with the epoxy resin composition to form a molded body, curing the molded body to seal the semiconductor chip, and obtaining a sealed body; This is a method for manufacturing a semiconductor device including these steps.

[0127] In embodiment B1-3, in the step of supplying the epoxy resin composition, when warping of the support occurs due to the fact that the supplied epoxy resin composition contains, as the epoxy resin (A), at least one selected from the group consisting of glycidylamine type epoxy resins, bisphenol type epoxy resins, and polyalkylene glycol type diepoxy resins, and the content of the epoxy resin (A) with respect to the epoxy resin composition (100% by mass) is 8 to 50% by mass, the problem of suppressing warping is solved by supplying the epoxy resin composition under the above specific conditions.

[0128] · Embodiment B1-4 In the embodiment of B1, in the step of supplying the epoxy resin composition, the epoxy resin composition contains, as a curing agent (B), at least one selected from the group consisting of an amine-based curing agent, an acid anhydride-based curing agent, a phenol-based curing agent, and an imidazole-based curing agent, and the content of the epoxy resin (A) with respect to the epoxy resin composition (100% by mass) is 8 to 50% by mass, which is referred to as embodiment B1-4.

[0129] That is, in embodiment B1-4, the epoxy resin composition is supplied to the mold under the condition that X C / X S ≦0.3, and then a laminate including a support and a semiconductor chip mounted on the support is mounted on the mold. The epoxy resin composition contains, as a curing agent (B), at least one selected from the group consisting of an amine-based curing agent, an acid anhydride-based curing agent, a phenol-based curing agent, and an imidazole-based curing agent, and the content of the epoxy resin (A) with respect to the epoxy resin composition (100% by mass) is 8 to 50% by mass. A step of filling the laminate with the epoxy resin composition to form a molded body, curing the molded body to seal the semiconductor chip, and obtaining a sealed body. This is a method for manufacturing a semiconductor device including the above steps.

[0130] In embodiment B1-4, in the step of supplying the epoxy resin composition, when warping of the support occurs because the supplied epoxy resin composition contains, as a curing agent (B), at least one selected from the group consisting of an amine-based curing agent, an acid anhydride-based curing agent, a phenol-based curing agent, and an imidazole-based curing agent, and the content of the epoxy resin (A) with respect to the epoxy resin composition (100% by mass) is 8 to 50% by mass, the problem of suppressing warping is solved by supplying the epoxy resin composition under the above specific conditions.

[0131] · Embodiment B1-5 In the embodiment of B1, in the step of supplying the epoxy resin composition, the epoxy resin composition containing the inorganic filler (C) having an average particle diameter of 5.0 μm or less is referred to as Embodiment B1-5.

[0132] That is, in Embodiment B1-5, after supplying the epoxy resin composition to the mold under the condition that X C / X S ≤ 0.3, a step of mounting a laminate including a support and a semiconductor chip mounted on the support on the mold, wherein the epoxy resin composition contains an inorganic filler (C) having an average particle diameter of 5.0 μm or less; a step of filling the laminate with the epoxy resin composition to form a molded body, curing the molded body to seal the semiconductor chip, and obtaining a sealed body; This is a method for manufacturing a semiconductor device including these steps.

[0133] In Embodiment B1-5, in the step of supplying the epoxy resin composition, when warping of the support occurs due to the supplied epoxy resin composition containing the inorganic filler (C) having an average particle diameter of 5.0 μm or less, the problem of suppressing warping is solved by supplying the epoxy resin composition under the above specific conditions.

[0134] (Example of the embodiment of A2) · Embodiment A2-1 In the embodiment of A2, in the step of supplying the epoxy resin composition, the epoxy resin composition contains an epoxy resin (A), a curing agent (B), and an inorganic filler (C), and the epoxy resin composition is supplied onto the laminate by coating, and the coating pattern is partially or entirely curved, linear, or spot-like, which is referred to as Embodiment A2-1.

[0135] That is, in Embodiment A2-1, on a laminate including a support and a semiconductor chip mounted on the support, Y R / Y FA step of supplying an epoxy resin composition under the condition of ≤0.8, wherein the epoxy resin composition contains an epoxy resin (A), a curing agent (B), and an inorganic filler (C), and the epoxy resin composition is supplied onto the laminate by coating, and a part or all of the coating pattern is curved, linear, or spot-shaped; A step of filling the laminate with the epoxy resin composition to form a molded body, curing the molded body to seal the semiconductor chip, and obtaining a sealed body; A method for manufacturing a semiconductor device, comprising:

[0136] In Embodiment A2-1, in the step of supplying the epoxy resin composition, when warpage of the support occurs due to the supplied epoxy resin composition containing an epoxy resin (A), a curing agent (B), and an inorganic filler (C), the problem of suppressing warpage is solved by supplying the epoxy resin composition under the specific conditions.

[0137] · Embodiment A2-2 In the embodiment of A2, the embodiment in which the thickness of the epoxy resin composition in the step of supplying the epoxy resin composition is 1 to 20 mm is referred to as Embodiment A2-2.

[0138] That is, Embodiment A2-2 includes a step of supplying an epoxy resin composition on a laminate including a support and a semiconductor chip mounted on the support under the condition of Y R / Y F ≤0.8, and the thickness of the epoxy resin composition is 1 to 20 mm; A step of filling the laminate with the epoxy resin composition to form a molded body, curing the molded body to seal the semiconductor chip, and obtaining a sealed body; A method for manufacturing a semiconductor device, comprising:

[0139] In Embodiment A2-2, in the step of supplying the epoxy resin composition, when warping of the support occurs due to the thickness of the supplied epoxy resin composition being 1 to 20 mm, the problem of suppressing warping is solved by supplying the epoxy resin composition under the above specific conditions.

[0140] · Embodiment A2-3 In the embodiment of A2, in the step of supplying the epoxy resin composition, the epoxy resin composition includes, as epoxy resin (A), at least one selected from the group consisting of glycidylamine type epoxy resin, bisphenol type epoxy resin, and polyalkylene glycol type diepoxy resin, and the content of epoxy resin (A) with respect to the epoxy resin composition (100% by mass) is 8 to 50% by mass, which is referred to as Embodiment A2-3.

[0141] That is, Embodiment A2-3 is a step of supplying an epoxy resin composition under the condition of Y R / Y F ≤0.8, wherein the epoxy resin composition includes, as epoxy resin (A), at least one selected from the group consisting of glycidylamine type epoxy resin, bisphenol type epoxy resin, and polyalkylene glycol type diepoxy resin, and the content of epoxy resin (A) with respect to the epoxy resin composition (100% by mass) is 8 to 50% by mass, a step of filling the epoxy resin composition into the laminate to form a molded body, curing the molded body to seal the semiconductor chip, and obtaining a sealed body, which is a method for manufacturing a semiconductor device.

[0142] In Embodiment A2-3, in the step of supplying the epoxy resin composition, when the supplied epoxy resin composition contains at least one selected from the group consisting of glycidylamine type epoxy resins, bisphenol type epoxy resins, and polyalkylene glycol type diepoxy resins as the epoxy resin (A), and the content of the epoxy resin (A) with respect to the epoxy resin composition (100% by mass) is 8 to 50% by mass, resulting in warping of the support, the problem of suppressing warping is solved by supplying the epoxy resin composition under the above specific conditions.

[0143] · Embodiment A2-4 In the embodiment of A2, in the step of supplying the epoxy resin composition, the epoxy resin composition containing an inorganic filler (C) having an average particle size of 5.0 μm or less is referred to as Embodiment A2-4.

[0144] That is, Embodiment A2-4 is a step of supplying an epoxy resin composition under the condition of Y R / Y F ≤ 0.8, wherein the epoxy resin composition contains an inorganic filler (C) having an average particle size of 5.0 μm or less, a step of filling the laminate with the epoxy resin composition to form a molded body, curing the molded body to seal the semiconductor chip, and obtaining a sealed body, and is a method for manufacturing a semiconductor device including the above steps.

[0145] In Embodiment A2-4, in the step of supplying the epoxy resin composition, when the supplied epoxy resin composition contains an inorganic filler (C) having an average particle size of 5.0 μm or less, resulting in warping of the support, the problem of suppressing warping is solved by supplying the epoxy resin composition under the above specific conditions.

[0146] (Examples of Embodiments of B2) · Embodiment B2-1 In the embodiment of B2, in the step of supplying the epoxy resin composition, the epoxy resin composition contains an epoxy resin (A), a curing agent (B), and an inorganic filler (C), and the epoxy resin composition is supplied onto the laminate by coating. The coating pattern is such that part or all of it is curved, linear, or spot-like, and this is referred to as embodiment B2-1.

[0147] That is, in embodiment B2-1, after supplying the epoxy resin composition to the mold under the condition of Y R / Y F ≤ 0.8, a step of mounting a laminate including a support and a semiconductor chip mounted on the support on the mold. The epoxy resin composition contains an epoxy resin (A), a curing agent (B), and an inorganic filler (C), and the epoxy resin composition is supplied to the mold by coating. The coating pattern is such that part or all of it is curved, linear, or spot-like. A step of filling the laminate with the epoxy resin composition to form a molded body, curing the molded body to seal the semiconductor chip, and obtaining a sealed body. This is a method for manufacturing a semiconductor device including these steps.

[0148] In embodiment B2-1, in the step of supplying the epoxy resin composition, when warping of the support occurs due to the supplied epoxy resin composition containing an epoxy resin (A), a curing agent (B), and an inorganic filler (C), the problem of suppressing warping is solved by supplying the epoxy resin composition onto the laminate under the specific conditions.

[0149] · Embodiment B2-2 In the embodiment of B2, in the step of supplying the epoxy resin composition, the epoxy resin composition contains an inorganic filler (C), and the content of the inorganic filler (C) in the epoxy resin composition (100% by mass) is 85% by mass or less, and this is referred to as embodiment B2-2.

[0150] That is, in embodiment B2-2, in the mold, Y R / YF A step of mounting a laminate including a support and a semiconductor chip mounted on the support on the mold after supplying an epoxy resin composition under the condition of ≤0.8, wherein the epoxy resin composition contains an inorganic filler (C), and the content of the inorganic filler (C) with respect to the epoxy resin composition (100% by mass) is 85% by mass or less. A step of filling the laminate with the epoxy resin composition to form a molded body, curing the molded body to seal the semiconductor chip, and obtaining a sealed body. A method for manufacturing a semiconductor device including this.

[0151] In Embodiment B2-2, in the step of supplying the epoxy resin composition, when warping of the support occurs due to the supplied epoxy resin composition containing an inorganic filler (C) and the content of the inorganic filler (C) with respect to the epoxy resin composition (100% by mass) being 85% by mass or less, the problem of suppressing warping by supplying the epoxy resin composition under the specific conditions is solved.

[0152] · Embodiment B2-3 In the embodiment of B2, in the step of supplying the epoxy resin composition, the epoxy resin composition contains at least one selected from the group consisting of a glycidylamine type epoxy resin, a bisphenol type epoxy resin, and a polyalkylene glycol type diepoxy resin as the epoxy resin (A), and the content of the epoxy resin (A) with respect to the epoxy resin composition (100% by mass) is 8 to 50% by mass, which is referred to as Embodiment B2-3.

[0153] That is, Embodiment B2-3 is Y for the mold R / Y FAfter supplying the epoxy resin composition under the condition of ≤0.8, a step of mounting a laminate including a support and a semiconductor chip mounted on the support on the mold, wherein the epoxy resin composition includes, as an epoxy resin (A), at least one selected from the group consisting of glycidylamine type epoxy resin, bisphenol type epoxy resin, and polyalkylene glycol type diepoxy resin, and the content of the epoxy resin (A) with respect to the epoxy resin composition (100% by mass) is 8 to 50% by mass; A step of filling the laminate with the epoxy resin composition to form a molded body, curing the molded body to seal the semiconductor chip, and obtaining a sealed body; A method for manufacturing a semiconductor device including the above steps.

[0154] In Embodiment B2-3, in the step of supplying the epoxy resin composition, when the supplied epoxy resin composition includes, as an epoxy resin (A), at least one selected from the group consisting of glycidylamine type epoxy resin, bisphenol type epoxy resin, and polyalkylene glycol type diepoxy resin, and the content of the epoxy resin (A) with respect to the epoxy resin composition (100% by mass) is 8 to 50% by mass, resulting in warping of the support, the problem of suppressing warping is solved by supplying the epoxy resin composition under the above specific conditions.

[0155] · Embodiment B2-4 In the embodiment of B2, in the step of supplying the epoxy resin composition, the epoxy resin composition including, as a curing agent (B), at least one selected from the group consisting of amine-based curing agents, acid anhydride-based curing agents, phenol-based curing agents, and imidazole-based curing agents, and the content of the epoxy resin (A) with respect to the epoxy resin composition (100% by mass) is 8 to 50% by mass is referred to as Embodiment B2-4.

[0156] That is, Embodiment B2-4 is Y on the mold R / Y FAfter supplying the epoxy resin composition under the condition of ≤0.8, a step of mounting a laminate including a support and a semiconductor chip mounted on the support on the mold, wherein the epoxy resin composition contains at least one selected from the group consisting of an amine-based curing agent, an acid anhydride-based curing agent, a phenol-based curing agent, and an imidazole-based curing agent as a curing agent (B), and the content of the epoxy resin (A) with respect to the epoxy resin composition (100% by mass) is 8 to 50% by mass. A step of filling the laminate with the epoxy resin composition to form a molded body, curing the molded body to seal the semiconductor chip, and obtaining a sealed body. A method for manufacturing a semiconductor device including the above steps.

[0157] In Embodiment B2-4, in the step of supplying the epoxy resin composition, when warping of the support occurs because the supplied epoxy resin composition contains at least one selected from the group consisting of an amine-based curing agent, an acid anhydride-based curing agent, a phenol-based curing agent, and an imidazole-based curing agent as a curing agent (B), and the content of the epoxy resin (A) with respect to the epoxy resin composition (100% by mass) is 8 to 50% by mass, the problem of suppressing warping is solved by supplying the epoxy resin composition under the above specific conditions.

[0158] · Embodiment B2-5 In the embodiment of B2, the epoxy resin composition containing an inorganic filler (C) having an average particle size of 5.0 μm or less in the step of supplying the epoxy resin composition is referred to as Embodiment B2-5.

[0159] That is, Embodiment B2-5 is a step of supplying an epoxy resin composition to a mold under the condition of Y R / Y F ≤0.8, and then mounting a laminate including a support and a semiconductor chip mounted on the support on the mold, wherein the epoxy resin composition contains an inorganic filler (C) having an average particle size of 5.0 μm or less. A step of filling the above laminate with the above epoxy resin composition to form a molded body, curing the above molded body to seal the above semiconductor chip, and obtaining a sealed body; It is a method for manufacturing a semiconductor device including

[0160] In Embodiment B2-5, in the step of supplying the epoxy resin composition, when the supplied epoxy resin composition contains the inorganic filler (C) having an average particle size of 5.0 μm or less and causes warping of the support, by supplying the epoxy resin composition under the above specific conditions, the problem of suppressing warping is solved.

[0161] In the step of supplying the epoxy resin composition according to the embodiments of A1, A2, B1, and B2, it is preferable that the epoxy resin composition is not supplied in a range exceeding 90% with respect to the radius of the support from the center point of the support. If the epoxy resin composition is supplied in the above range, it may have an adverse effect such as the epoxy resin composition flowing out of the support and contaminating the device at the stage of forming the molded body.

Examples

[0162] Hereinafter, the present disclosure will be described in more detail based on examples, but the present disclosure is not limited by the examples.

[0163] Compositions A and B having the compositions shown in Table 1 were prepared by appropriately selecting and mixing an epoxy resin (A), a curing agent (B), and an inorganic filler (C) so as to have the blending ratios shown in Table 1. Note that the numerical values for each composition in Table 1 represent the mass ratios of the blended components.

[0164] Hereinafter, each component in Table 1 will be described below. ·Epoxy resin (A) EP-3950L (product name): Glycidylamine type epoxy resin, liquid at 25°C, manufactured by ADEKA Corporation SE-300P (product name): Glycidylamine type epoxy resin, liquid at 25°C, manufactured by Shin-A T&C Co., Ltd. YX7400N (Product Name): Polyalkylene glycol type epoxy resin, liquid at 25°C, manufactured by Mitsubishi Chemical Corporation RE410-S (Product Name): Bisphenol A type epoxy resin, liquid at 25°C, manufactured by Nippon Kayaku Co., Ltd. YDF-8170GSF: Bisphenol F type epoxy resin, liquid at 25°C, manufactured by Nippon Steel Chemical & Material Co., Ltd. · Hardener (B) MEH-8005 (Product Name): Phenolic hardener (phenol novolak), manufactured by Meiwafosis Co., Ltd. 2MZA-PW (Product Name): 2,4-diamino-6-[2'-methylimidazolyl-(1')]-ethyl-s-triazine, manufactured by Shikoku Kasei Kogyo Co., Ltd. · Inorganic filler (C) SE101G-SMO (Product Name): Average particle size 0.3 μm, maximum particle size 5.0 μm or less, 3-glycidoxypropyltrimethoxysilane, surface-treated silicon dioxide, manufactured by Admatechs Co., Ltd. YA050-SM1 (Product Name): Average particle size 0.05 μm, maximum particle size 0.25 μm or less, 3-methacryloxypropyltrimethoxysilane, surface-treated silicon dioxide, manufactured by Admatechs Co., Ltd.

[0165]

Table 1

[0166] (Examples 1 and 2 and Comparative Example 1) Using the product name "WCM-300" manufactured by Aoki Yamada Co., Ltd., which is the device corresponding to the embodiments of A1 and A2 described in FIG. 1, as the molding device, the following experiments were conducted.

[0167] The FBW40A (10 mm die) and Bare (20 mm die) made by WALTS were mounted at four locations, namely north, south, east, and west, on a 12-inch circular wafer as a support to obtain a laminate. Composition A was supplied to this laminate. At this time, the supply amount of Composition A was the same in both the examples and the comparative examples. The coating pattern during supply was, as shown in FIG. 5, uniform coating as shown in (a) (Example 1), pattern coating with a part being stripe-shaped as shown in (b) (Example 2), and single-point supply (single-point coating) as shown in (c) (Comparative Example 1). The thickness of Composition A in Example 1 was 1 mm, the thickness of Composition A in Example 2 was 4 mm, and the thickness of Composition A in Comparative Example 1 exceeded 20 mm.

[0168] The radius of the above wafer is 12 inches (about 150 mm), and the "range within 90% of the radius of the support" corresponds to the range of 1.08 inches (about 135 mm) from the center point of the above wafer.

[0169] From here, X C / X S is a circle that can be drawn so as not to include the supplied Composition A in plan view and within a range of 1.08 inches from the center point of the support, and is the radius of the circle with the maximum projected area on the support (that is, X C ). It can be calculated by dividing it by the radius of the support (that is, X S ) in plan view. The calculated value of X C / X S is shown in Table 2.

[0170] Also, the "range within 30% of the radius of the support" corresponds to the range of 0.36 inches (about 45 mm) from the center point of the above wafer. Y R / Y F is calculated by dividing the projected area of the supplied Composition A on the support within a range of 0.36 inches from the center point of the support (that is, Y R ) by the projected area of the Composition A supplied to the entire support on the support (that is, Y F ). The calculated value of Y R / Y FThe value is shown in Table 2.

[0171] Thereafter, a mold was attached to the laminate, and a compression molded body was formed by compression and decompression. Further, the compression molded body was thermally cured to form a sealed body. These operations were performed under the conditions of a mold temperature of 120°C, a mold cure time of 400 seconds, a clamping force of 250 kN, and PMC (Post Mold Cure) of 150°C / hr. Using the obtained sealed body, the amount of warpage at 25°C was measured with a shadow moire device (manufactured by Akrometrix, AXP 2.0-DFP2). Note that the highest position was taken as the amount of warpage in the state where the cured surface was facing up and placed on a horizontal table. The calculated values of warpage (μm) and the improvement rate of warpage (%) are shown in Table 2.

[0172] (Examples 3 and 4 and Comparative Example 2) As the molding apparatus, the following experiment was conducted using the product name "CPM-1080" manufactured by TOWA Corporation, which is a device corresponding to the embodiments of B1 and B2 described with reference to FIG. 2.

[0173] Composition A was supplied to the mold. At this time, the supply amount of Composition A was the same in the examples and comparative examples. The coating pattern at the time of supply was uniform coating as shown in (a) in FIG. 6 (Example 3), pattern coating with a part being stripe-shaped as shown in (b) (Example 4), and single-point supply (single-point coating) as shown in (c) (Comparative Example 2). As the support, a 12-inch circular wafer mounted with FBW40A (10 mm die) and Bare (20 mm die) manufactured by ON Semiconductor was used to form a laminate. The thickness of Composition A in Example 3 was 1 mm, the thickness of Composition A in Example 4 was 4 mm, and the thickness of Composition A in Comparative Example 2 exceeded 20 mm.

[0174] The radius of the above wafer is 12 inches (about 150 mm), and the range "within 90% of the radius of the support" corresponds to the range of 1.08 inches (about 135 mm) from the center point of the above wafer.

[0175] From here, X C / XS is a circle that can be drawn in a range of 1.08 inches from the center point of the support so as not to include the supplied Composition A in plan view, and has the maximum projected area on the support (i.e., X C ). It can be calculated by dividing the radius of the circle (i.e., X S ) by the radius of the support (i.e., X C / X S . The calculated value of X

[0176] In addition, Y R / Y F is calculated by dividing the projected area of the supplied Composition A on the support (i.e., Y R ) that exists in a range of 0.36 inches from the center point of the support by the projected area of the Composition A supplied to the entire support on the support (i.e., Y F ). The calculated value of Y R / Y F is shown in Table 2.

[0177] The above laminate was mounted on a mold and compression-molded to form a compression molded body. Further, the compression molded body was thermally cured to form a sealed body. These operations were performed under the conditions of a mold temperature of 120 °C, a mold cure time of 400 seconds, a clamping force of 250 kN, and PMC 150 °C / hr. Using the obtained sealed body, the amount of warpage at 25 °C was measured with a shadow moire device. In addition, with the cured surface facing up and placed on a horizontal table, the highest position was taken as the amount of warpage. The calculated values of warpage (μm) and the improvement rate of warpage (%) are shown in Table 2.

[0178] (Examples 5 and 6 and Comparative Example 3) Sealed bodies were produced in the same manner as in Examples 1 and 2 and Comparative Example 1, except that Composition B was used instead of Composition A (Examples 5 and 6 and Comparative Example 3, respectively). The calculated value of X C / X S , the calculated value of Y R / Y FThe values of [value], the calculated warpage (μm) value, and the warpage improvement rate (%) are shown in Table 2. The thickness of Composition B in Example 5 was 1 mm, the thickness of Composition B in Example 6 was 4 mm, and the thickness of Composition B in Comparative Example 3 exceeded 20 mm.

[0179] [Table 2] [Explanation of Symbols]

[0180] 1 Semiconductor chip 2 Solder bump 3 Support 4 Laminate 5 Epoxy resin composition 6 Nozzle 7 Mold 8 Compression molded body 9 Sealing body 11 Semiconductor chip 12 Solder bump 13 Support 14 Laminate 15 Epoxy resin composition 16 Nozzle 17 Mold 18 Compression molded body 19 Sealing body 21 Support 22 Epoxy resin composition Supplied (applied) epoxy resin composition 23 Circle drawn within a range of 90% or less with respect to the radius of the support 24 Circle with the maximum projected area on the support L11 Radius of the support (X C ) L12 Radius of the circle with the maximum projected area on the support (X S ) 31 Support 32 Epoxy resin composition Supplied (applied) epoxy resin composition 33 Circle drawn within a range of 30% or less with respect to the radius of the support L21 Radius of the support L22 Distance of 30% with respect to the radius of the support

Claims

1. On a laminate including a support and a semiconductor chip mounted on the support, X Ｃ / X Ｓ A step of supplying an epoxy resin composition under the condition that ≦0.3, wherein the epoxy resin composition contains an epoxy resin (A), a curing agent (B), and an inorganic filler (C), and the content of the curing agent (B) with respect to the epoxy resin composition (100% by mass) is 0.1 to 30% by mass, and the epoxy resin composition is supplied onto the laminate by coating, and a part or all of the coating pattern is curved, linear, or spot-shaped, or In the mold, X Ｃ / X Ｓ After supplying the epoxy resin composition under the condition that ≤0.3, a step of mounting a laminate including a support and a semiconductor chip mounted on the support on the mold, wherein the epoxy resin composition contains an epoxy resin (A), a curing agent (B), and an inorganic filler (C), the content of the curing agent (B) with respect to the epoxy resin composition (100% by mass) is 0.1 to 30% by mass, and the epoxy resin composition is supplied to the mold by coating, and a part or all of the coating pattern is curved, linear, or spot-shaped A step of filling the laminate with the epoxy resin composition to form a molded body, curing the molded body to seal the semiconductor chip, and obtaining a sealed body; A method for manufacturing a semiconductor device including the above. X Ｃ : A circle that can be drawn within a range of 90% or less of the radius of the support from the center point of the support, excluding the supplied epoxy resin composition, when viewed in a plan view, and having the maximum projected area on the support. X Ｓ : The radius of the support when viewed in plan view

2. On a laminate including a support and a semiconductor chip mounted on the support, Y Ｒ / Y Ｆ A step of supplying an epoxy resin composition under the condition that Y / Y ≤ 0.8, wherein the epoxy resin composition contains an epoxy resin (A), a curing agent (B), and an inorganic filler (C), the content of the curing agent (B) with respect to the epoxy resin composition (100% by mass) is 0.1 to 30% by mass, and the epoxy resin composition is supplied onto the laminate by coating, and the coating pattern is partially or entirely curved, linear, or spot-shaped, or On the mold, Y Ｒ / Y Ｆ After supplying the epoxy resin composition under the condition that ≤0.8, a step of mounting a laminate including a support and a semiconductor chip mounted on the support on the mold, wherein the epoxy resin composition contains an epoxy resin (A), a curing agent (B), and an inorganic filler (C), the content of the curing agent (B) with respect to the epoxy resin composition (100% by mass) is 0.1 to 30% by mass, and the epoxy resin composition is supplied to the mold by coating, and a part or all of the coating pattern is curved, linear, or spot-like A step of filling the laminate with the epoxy resin composition to form a molded body, curing the molded body to seal the semiconductor chip, and obtaining a sealed body; A method for manufacturing a semiconductor device including the above. Y Ｆ : Projected area of the supplied epoxy resin composition onto the support Y Ｒ : The projected area of the supplied epoxy resin composition onto the support, which exists within a range of 30% or less with respect to the radius of the support, from the center point of the support

3. In the mold, X Ｃ / X Ｓ After supplying the epoxy resin composition under the condition that ≦0.3, a step of mounting a laminate including a support and a semiconductor chip mounted on the support in the mold, wherein the epoxy resin composition contains an epoxy resin (A), a curing agent (B), and an inorganic filler (C), the content of the curing agent (B) with respect to the epoxy resin composition (100% by mass) is 0.1 to 30% by mass, and the content of the inorganic filler (C) with respect to the epoxy resin composition (100% by mass) is 85% by mass or less A step of filling the laminate with the epoxy resin composition to form a molded body, curing the molded body to seal the semiconductor chip, and obtaining a sealed body; A method for manufacturing a semiconductor device including the above. X Ｃ : A circle that can be drawn within a range of 90% or less of the radius of the support from the center point of the support when viewed in plan view, excluding the supplied epoxy resin composition, and having the maximum projected area on the support X Ｓ : The radius of the support when viewed in plan view

4. In the mold, Y Ｒ / Y Ｆ After supplying the epoxy resin composition under the condition that ≤0.8, a step of mounting a laminate including a support and a semiconductor chip mounted on the support on the mold, wherein the epoxy resin composition contains an epoxy resin (A), a curing agent (B), and an inorganic filler (C), the content of the curing agent (B) with respect to the epoxy resin composition (100% by mass) is 0.1 to 30% by mass, and the content of the inorganic filler (C) with respect to the epoxy resin composition (100% by mass) is 85% by mass or less A step of filling the laminate with the epoxy resin composition to form a molded body, curing the molded body to seal the semiconductor chip, and obtaining a sealed body; A method for manufacturing a semiconductor device including the above. Y Ｆ : Projected area of the supplied epoxy resin composition onto the support Y Ｒ : The projected area of the supplied epoxy resin composition onto the support, which exists within a range of 30% or less with respect to the radius of the support from the center point of the support

5. On a laminate including a support and a semiconductor chip mounted on the support, X Ｃ / X Ｓ A step of supplying an epoxy resin composition under the condition that ≤0.3, wherein the epoxy resin composition contains an epoxy resin (A), a curing agent (B), and an inorganic filler (C), and as the epoxy resin (A), at least one selected from the group consisting of glycidylamine type epoxy resins, bisphenol type epoxy resins, and polyalkylene glycol type diepoxy resins is included, the content of the epoxy resin (A) with respect to the epoxy resin composition (100% by mass) is 8 to 50% by mass, and the content of the curing agent (B) with respect to the epoxy resin composition (100% by mass) is 0.1 to 30% by mass, or To the mold, X Ｃ / X Ｓ After supplying the epoxy resin composition under the condition that it is ≤0.3, a step of mounting a laminate including a support and a semiconductor chip mounted on the support on the mold, wherein the epoxy resin composition contains an epoxy resin (A), a curing agent (B), and an inorganic filler (C), and as the epoxy resin (A), contains at least one selected from the group consisting of glycidylamine type epoxy resins, bisphenol type epoxy resins, and polyalkylene glycol type diepoxy resins, the content of the epoxy resin (A) with respect to the epoxy resin composition (100% by mass) is 8 to 50% by mass, and the content of the curing agent (B) with respect to the epoxy resin composition (100% by mass) is 0.1 to 30% by mass; A step of filling the laminate with the epoxy resin composition to form a molded body, curing the molded body to seal the semiconductor chip, and obtaining a sealed body; A method for manufacturing a semiconductor device including the above. X Ｃ : A circle that, when viewed in plan view, can be drawn within a range of 90% or less of the radius of the support from the center point of the support so as not to include the supplied epoxy resin composition, and that has the maximum projected area on the support X Ｓ : The radius of the support when viewed in plan view

6. On a laminate including a support and a semiconductor chip mounted on the support, Y Ｒ / Y Ｆ A step of supplying an epoxy resin composition under the condition of ≤0.8, wherein the epoxy resin composition contains an epoxy resin (A), a curing agent (B), and an inorganic filler (C), and as the epoxy resin (A), contains at least one selected from the group consisting of glycidylamine type epoxy resins, bisphenol type epoxy resins, and polyalkylene glycol type diepoxy resins, the content of the epoxy resin (A) with respect to the epoxy resin composition (100% by mass) is 8 to 50% by mass, and the content of the curing agent (B) with respect to the epoxy resin composition (100% by mass) is 0.1 to 30% by mass, or On the mold, Y Ｒ / Y Ｆ After supplying the epoxy resin composition under the condition that Y / Y ≤ 0.8, a step of mounting a laminate including a support and a semiconductor chip mounted on the support on the mold, wherein the epoxy resin composition contains an epoxy resin (A), a curing agent (B), and an inorganic filler (C), and as the epoxy resin (A), at least one selected from the group consisting of glycidylamine type epoxy resin, bisphenol type epoxy resin, and polyalkylene glycol type diepoxy resin is included, the content of the epoxy resin (A) with respect to the epoxy resin composition (100% by mass) is 8 to 50% by mass, and the content of the curing agent (B) with respect to the epoxy resin composition (100% by mass) is 0.1 to 30% by mass; A step of filling the laminate with the epoxy resin composition to form a molded body, curing the molded body to seal the semiconductor chip, and obtaining a sealed body; A method for manufacturing a semiconductor device including the above. Y Ｆ : Projected area of the supplied epoxy resin composition onto the support Y Ｒ : The projected area of the supplied epoxy resin composition onto the support, which exists within a range of 30% or less with respect to the radius of the support from the center point of the support

7. In the mold, X Ｃ / X Ｓ After supplying the epoxy resin composition under the condition that ≦0.3, a step of mounting a laminate including a support and a semiconductor chip mounted on the support on the mold, wherein the epoxy resin composition contains an epoxy resin (A), a curing agent (B), and an inorganic filler (C), and as the curing agent (B), contains at least one selected from the group consisting of an amine-based curing agent, an acid anhydride-based curing agent, a phenol-based curing agent, and an imidazole-based curing agent, the content of the epoxy resin (A) with respect to the epoxy resin composition (100% by mass) is 8 to 50% by mass, and the content of the curing agent (B) with respect to the epoxy resin composition (100% by mass) is 0.1 to 30% by mass; A step of filling the laminate with the epoxy resin composition to form a molded body, curing the molded body to seal the semiconductor chip, and obtaining a sealed body; A method for manufacturing a semiconductor device including the above. X Ｃ : A circle that, when viewed in plan view, can be drawn so as not to include the supplied epoxy resin composition and within a range of 90% or less of the radius of the support from the center point of the support, and is the radius of the circle having the maximum projected area on the support X Ｓ : The radius of the support when viewed in plan view

8. In the mold, Y Ｒ / Y Ｆ After supplying the epoxy resin composition under the condition that ≦0.8, a step of mounting a laminate including a support and a semiconductor chip mounted on the support on the mold, wherein the epoxy resin composition contains an epoxy resin (A), a curing agent (B), and an inorganic filler (C), and as the curing agent (B), contains at least one selected from the group consisting of an amine-based curing agent, an acid anhydride-based curing agent, a phenol-based curing agent, and an imidazole-based curing agent, and the content of the epoxy resin (A) with respect to the epoxy resin composition (100% by mass) is 8 to 50% by mass, and the content of the curing agent (B) with respect to the epoxy resin composition (100% by mass) is 0.1 to 30% by mass; A step of filling the laminate with the epoxy resin composition to form a molded body, curing the molded body to seal the semiconductor chip, and obtaining a sealed body; A method for manufacturing a semiconductor device including the above. Y Ｆ : Projected area of the supplied epoxy resin composition onto the support Y Ｒ : The projected area of the supplied epoxy resin composition onto the support, which exists within a range of 30% or less with respect to the radius of the support from the center point of the support

9. On a laminate including a support and a semiconductor chip mounted on the support, X Ｃ / X Ｓ A step of supplying an epoxy resin composition under the condition that ≤0.3, wherein the epoxy resin composition contains an epoxy resin (A), a curing agent (B), and an inorganic filler (C), the content of the curing agent (B) with respect to the epoxy resin composition (100% by mass) is 0.1 to 30% by mass, and the inorganic filler (C) having an average particle diameter of 5.0 μm or less is included, or On the mold, X Ｃ / X Ｓ After supplying the epoxy resin composition under the condition that ≦0.3, a step of mounting a laminate including a support and a semiconductor chip mounted on the support on the mold, wherein the epoxy resin composition contains an epoxy resin (A), a curing agent (B), and an inorganic filler (C), the content of the curing agent (B) with respect to the epoxy resin composition (100% by mass) is 0.1 to 30% by mass, and a step of including an inorganic filler (C) having an average particle diameter of 5.0 μm or less A step of filling the laminate with the epoxy resin composition to form a molded body, curing the molded body to seal the semiconductor chip, and obtaining a sealed body; A method for manufacturing a semiconductor device including the above. X Ｃ : A circle that can be drawn in a range within 90% of the radius of the support from the center point of the support when viewed in a plan view so as not to include the supplied epoxy resin composition, and is the radius of the circle having the maximum projected area on the support X Ｓ : The radius of the support when viewed in plan view

10. On a laminate including a support and a semiconductor chip mounted on the support, Y Ｒ / Y Ｆ A step of supplying an epoxy resin composition under the condition that ≦0.8, wherein the epoxy resin composition contains an epoxy resin (A), a curing agent (B), and an inorganic filler (C), and the content of the curing agent (B) with respect to the epoxy resin composition (100% by mass) is 0.1 to 30% by mass, and the step of including an inorganic filler (C) having an average particle diameter of 5.0 μm or less, or Supply an epoxy resin composition to the mold under the condition that Y Ｒ / Y Ｆ ≤ 0.8, and then mount a laminate including a support and a semiconductor chip mounted on the support on the mold. The epoxy resin composition contains an epoxy resin (A), a curing agent (B), and an inorganic filler (C). The content of the curing agent (B) relative to the epoxy resin composition (100% by mass) is 0.1 to 30% by mass, and the inorganic filler (C) has an average particle size of 5.0 μm or less. A step of filling the laminate with the epoxy resin composition to form a molded body, curing the molded body to seal the semiconductor chip, and obtaining a sealed body; A method for manufacturing a semiconductor device including the above. Y Ｆ : Projected area of the supplied epoxy resin composition onto the support Y Ｒ : The projected area of the supplied epoxy resin composition onto the support, which exists within a range of 30% or less with respect to the radius of the support from the center point of the support

11. The method for manufacturing a semiconductor device according to any one of Claims 1 to 4, 9, and 10, wherein the content of the epoxy resin (A) with respect to the epoxy resin composition (100% by mass) is 8 to 50% by mass.

12. The method for manufacturing a semiconductor device according to any one of claims 1, 2, 5 to 10, wherein the content of the inorganic filler (C) is 40 to 95% by mass with respect to the epoxy resin composition (100% by mass).

13. The method for manufacturing a semiconductor device according to any one of claims 1 to 10, wherein the inorganic filler (C) is silica.

14. The method for manufacturing a semiconductor device according to any one of claims 1 to 10, wherein the epoxy resin composition is a liquid epoxy resin composition at 25°C.

15. The method for manufacturing a semiconductor device according to claim 14, wherein the viscosity (25°C, B-type viscometer, 10 rpm) of the epoxy resin composition is 50 to 250 Pa·s.

16. The method for manufacturing a semiconductor device according to any one of claims 1 to 10, wherein the warpage amount of the sealing body at 25°C measured by a shadow moire device is 4000 μm or less.

17. (a) A step of setting a material to be supplied in a chamber; (b) A step of decompressing the inside of the chamber after the step (a); (c) A step of supplying resin so as to apply to a narrow portion after the step (b); (d) A step of pressurizing the inside of the chamber after the step (c); The method for manufacturing a semiconductor device according to any one of claims 1 to 10, excluding a resin supply method for supplying a liquid resin to a material to be supplied having a narrow portion, the resin supply method including the above steps.

18. The step of filling the laminate with the epoxy resin composition to form a molded body, curing the molded body to seal the semiconductor chip, and obtaining a sealing body is A step of filling the laminate with the epoxy resin composition to form a molded body by performing decompression simultaneously with compression, curing the molded body to seal the semiconductor chip, and obtaining a sealing body, the method for manufacturing a semiconductor device according to any one of claims 1 to 10.

19. The epoxy resin composition includes an epoxy resin (A), a curing agent (B), and an inorganic filler (C), As the epoxy resin (A), it includes at least one selected from the group consisting of glycidylamine type epoxy resins, bisphenol type epoxy resins, and polyalkylene glycol type diepoxy resins, As the curing agent (B), it includes at least one selected from the group consisting of amine type curing agents, acid anhydride type curing agents, phenol type curing agents, and imidazole type curing agents, As the inorganic filler (C), it includes silica having an average particle size of 5.0 μm or less. The content of the epoxy resin (A) relative to the epoxy resin composition (100% by mass) is 8 to 50% by mass, the content of the inorganic filler (C) relative to the epoxy resin composition (100% by mass) is 40 to 95% by mass, the epoxy resin composition is liquid at 25°C, and the viscosity (at 25°C, B-type viscometer, 10 rpm) is 50 to 250 Pa·s. The method for manufacturing a semiconductor device according to any one of claims 1 to 10.

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