Radiation detector, method for manufacturing the same, sensor module, radiation diagnosis device, and ct device

Abstract

To provide a technique of easily exchanging a radiation detection unit.SOLUTION: A radiation detector includes: a semiconductor detection unit with a plurality of pixel regions for converting radiation to electric signals; a circuit component for receiving electric signals from the semiconductor detection unit; and a plurality of conductive coupling members for coupling the semiconductor detection unit and the circuit component to each other. The conductive coupling members are separate from one another to correspond to the pixel regions of the semiconductor detection unit, respectively, and the conductive coupling members have binding force reduced by stimulation.SELECTED DRAWING: Figure 4

Description

Technical Field

[0001] The present disclosure relates to a radiation detection device, a method for manufacturing the same, a sensor module, a radiation diagnostic device, and a CT device.

Background Art

[0002] A radiation detection device having a semiconductor layer that converts radiation into charge has been proposed. In the radiation detection device of Patent Document 1, a plurality of sensor modules each having such a semiconductor detection unit are attached side by side to a frame. An electrode for applying a voltage to the semiconductor detection unit and an electrical signal detection circuit are arranged between the semiconductor detection unit and the frame in the sensor module.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] When manufacturing a radiation detection device, the radiation detection unit may be damaged. In such a case, it is useful to reuse parts other than the radiation detection unit. Some aspects of the present invention aim to provide a technique for facilitating the replacement of the radiation detection unit.

Means for Solving the Problems

[0005] In some embodiments, there is provided a radiation detection device including: a semiconductor detection unit having a plurality of pixel regions that convert radiation into an electrical signal; circuit components to which the electrical signal is transmitted from the semiconductor detection unit; and a plurality of conductive coupling members that couple the semiconductor detection unit and the circuit components, wherein the plurality of conductive coupling members are separately arranged so as to correspond to the plurality of pixel regions of the semiconductor detection unit, and the plurality of conductive coupling members are configured such that their coupling force decreases upon stimulation.

Advantages of the Invention

[0006] According to the present disclosure, replacement of the radiation detection unit becomes easier.

Brief Description of the Drawings

[0007]

Figure 1

Figure 2

Figure 3

Figure 4

Figure 5

Figure 6

Modes for Carrying Out the Invention

[0008] Hereinafter, embodiments will be described in detail with reference to the accompanying drawings. Note that the following embodiments do not limit the invention according to the claims. Although a plurality of features are described in the embodiments, not all of these plurality of features are essential to the invention, and the plurality of features may be arbitrarily combined. Further, in the accompanying drawings, the same or similar configurations are denoted by the same reference numerals, and redundant descriptions are omitted.

[0009] In the following description, radiation includes, in addition to α-rays, β-rays, γ-rays, etc., which are beams formed by particles (including photons) emitted by radioactive decay, beams having energy equal to or greater than the same level, such as X-rays, particle beams, cosmic rays, etc. may also be included. In the present application, photons such as X-rays and γ-rays, and particles such as β-rays and α-rays may sometimes be collectively referred to as radiation photons.

[0010] With reference to the block diagram of FIG. 1, a configuration example of a computed tomography (CT) apparatus 100 according to some embodiments will be described. The CT apparatus 100 may include a radiation generation unit 101, a wedge 102, a collimator 103, a radiation detection device 104, a top plate 105, a rotating frame 106, a high voltage generation device 107, a data acquisition device (DAS: Data Acquisition System) 108, a signal processing unit 109, a display unit 110, and a control unit 111. This configuration is an example, and the CT apparatus 100 may have other configurations.

[0011] Note that the CT apparatus 100 may be a device capable of performing photon counting CT. That is, the CT apparatus 100 described in the following embodiments may be a device capable of reconstructing CT image data with a high signal-to-noise ratio by counting radiation that has passed through a subject using a radiation detection device 104 of a photon counting method. Further, the radiation detection device 104 described in the following embodiments may be a direct conversion type detector that directly converts radiation photons into charges proportional to energy.

[0012] The radiation generation unit 101 irradiates radiation toward the radiation detection device 104. The radiation generation unit 101 is composed of, for example, a vacuum tube that generates X-rays. A high voltage and a filament current are supplied to the vacuum tube of the radiation generation unit 101 from the high voltage generation device 107. X-rays are generated by irradiating thermoelectrons from the cathode (filament) toward the anode (target).

[0013] The wedge 102 is a filter that adjusts the amount of the radiation 121 irradiated from the radiation generation unit 101. The wedge 102 attenuates the radiation dose so that the radiation 121 irradiated from the radiation generation unit 101 to the subject 120 has a predetermined distribution. The collimator 103 is composed of a lead plate or the like that narrows down the irradiation range of the radiation transmitted through the wedge 102. The radiation 121 generated by the radiation generation unit 101 is shaped into a cone beam through the collimator 103 and irradiated onto the subject 120 on the top plate 105.

[0014] The radiation detection device 104 detects the radiation 121 that has passed through the subject 120 from the radiation generation unit 101 and outputs a signal corresponding to the radiation dose to the DAS 108. The subject 120 may be a living organism (for example, a human or an animal) or an inanimate object.

[0015] Note that the radiation detection device 104 may output a signal capable of measuring the energy value of the radiation photon each time the radiation photon is incident. The radiation photon is, for example, a radiation photon irradiated from the radiation generation unit 101 and transmitted through the subject 120. The radiation detection device 104 has a plurality of detection elements that output an electrical signal (analog signal) of one pulse each time the radiation photon is incident. By counting the number of electrical signals (pulses), it is possible to count the number of radiation photons incident on each detection element. Further, by performing arithmetic processing on this signal, it is possible to measure the energy value of the radiation photon that caused the output of this signal.

[0016] The above-described detection element may be, for example, a semiconductor detection element such as CdTe (cadmium telluride) or CdZnTe (cadmium zinc telluride) with electrodes disposed thereon. That is, the radiation detection device 104 is a direct conversion type detector that directly converts incident radiation photons into electrical signals. The radiation detection device 104 includes a plurality of the above-described detection elements and ASICs (Application Specific Integrated Circuits) that are connected to the detection elements and count the radiation photons detected by the detection elements. The ASIC counts the number of radiation photons incident on the detection element by discriminating the individual charges output by the detection element. Further, the ASIC measures the energy of the counted X-ray photons by performing arithmetic processing based on the magnitude of each charge. Furthermore, the ASIC outputs the counting result of the radiation photons as digital data to the DAS 108.

[0017] The DAS 108 generates detection data based on the result of the counting process input from the radiation detection device 104. The detection data is, for example, a sinogram. The sinogram is data obtained by arranging the results of the counting process incident on each detection element at each position of the radiation generation unit 101. The sinogram is data obtained by arranging the results of the counting process in a two-dimensional orthogonal coordinate system with the view direction and the channel direction as axes. The DAS 108 generates a sinogram, for example, in units of columns in the slice direction in the radiation detection device 104. The result of the counting process is data that assigns the number of photons of radiation for each energy. For example, the DAS 108 counts the photons (radiation photons) derived from the radiation that has passed through the subject 120 after being irradiated from the radiation generation unit 101, discriminates the energy of the counted radiation photons, and uses the result as the result of the counting process. The DAS 108 is realized, for example, by a processor.

[0018] The rotating frame 106 is annular and rotatable. Inside the rotating frame 106, the radiation generating unit 101 (wedge 102, collimator 103) and the radiation detection device 104 are arranged on opposite sides with respect to the top plate 105. The radiation generating unit 101 and the radiation detection device 104 are rotatable together with the rotating frame 106.

[0019] The high voltage generator 107 includes a boosting circuit and outputs a high voltage to the radiation generating unit 101. For example, the high voltage generator 107 has an electric circuit such as a transformer and a rectifier, and includes a high voltage generating unit that generates a high voltage applied to the radiation generating unit 101, and a radiation control unit that controls the output voltage according to the radiation generated by the radiation generating unit 101. The high voltage generating unit may be of a transformer type or an inverter type. The high voltage generator 107 may be provided on the rotating frame 106 or on a fixed frame (not shown). The DAS 108 includes an amplifying circuit and an analog / digital (A / D) conversion circuit, and outputs the signal from the radiation detection device 104 to the signal processing unit 109 as digital data.

[0020] The signal processing unit 109 processes the signal output from the radiation detection device 104. The signal processing unit 109 may include a central processing unit (CPU), a read only memory (ROM), and a random access memory (RAM). The display unit 110 includes a flat display device or the like and can display a radiation image. The control unit 111 includes a CPU, a ROM, a RAM, etc., and controls the operation of the entire CT apparatus 100. For example, the control unit 111 has a processing circuit having a CPU or the like, and a drive mechanism such as a motor and an actuator. The control unit 111 receives an input signal from the input interface and controls the operation of the gantry device and the bed device. For example, the control unit 111 controls the rotation of the rotating frame 106, the tilt of the gantry device, the operation of the bed device and the top plate, etc. Taking an example, as control for tilting the gantry device, the control unit 111 rotates the rotating frame 106 about an axis parallel to the X-axis direction based on the input tilt angle information. Note that the control unit 111 may be provided on the gantry device or on the console device.

[0021] The input interface receives various input operations from the operator, converts the received input operations into electrical signals, and outputs them to the control unit 111. Further, for example, the input interface receives input operations from the operator such as reconstruction conditions when reconstructing CT image data and image processing conditions when generating a post-processed image from CT image data. For example, the input interface is realized by a mouse, a keyboard, a trackball, a switch, a button, a joystick, a touch pad that performs an input operation by touching an operation surface, a touch screen in which a display screen and a touch pad are integrated, a non-contact input circuit using an optical sensor, a voice input circuit, and the like. The input interface may be provided on the gantry device. Further, the input interface may be composed of a tablet terminal or the like that can communicate wirelessly with the console device main body. Further, the input interface is not limited to only those having physical operation parts such as a mouse and a keyboard. For example, an electrical signal processing circuit that receives an electrical signal corresponding to an input operation from an external input device provided separately from the console device and outputs this electrical signal to the control unit 111 is also included in the example of the input interface.

[0022] The signal processing unit 109 may have a pre-processing function. The signal processing unit 109 can perform pre-processing such as logarithmic conversion processing, offset correction processing, sensitivity correction processing between channels, and beam hardening correction on the detection data output from the DAS 108 by the pre-processing function to generate projection data. Further, the signal processing unit 109 may have a reconstruction processing function. The signal processing unit 109 can perform a reconstruction process using, for example, a filtered back-projection method or a successive approximation reconstruction method on the projection data generated by the pre-processing function by the reconstruction processing function to generate CT image data. Further, the signal processing unit 109 can store the reconstructed CT image data in the memory by the reconstruction processing function.

[0023] The projection data generated from the counting results obtained by the photon counting CT contains information on the energy of the X-rays attenuated by passing through the subject 120. Therefore, the signal processing unit 109 can reconstruct, for example, CT image data of a specific energy component by means of a reconstruction processing function. Also, the signal processing unit 109 can reconstruct, by means of the reconstruction processing function, for example, CT image data for each of a plurality of energy components. Further, the signal processing unit 109 can, by means of the reconstruction processing function, assign, for example, a color tone corresponding to the energy component to each pixel of the CT image data of each energy component, and generate image data obtained by superimposing a plurality of CT image data color-coded according to the energy components. Further, the signal processing unit 109 can, by means of the reconstruction processing function, generate, for example, image data that enables identification of the substance by using the K absorption edge specific to the substance. Other image data generated by the signal processing unit 109 by means of the reconstruction processing function include monochromatic X-ray image data, density image data, effective atomic number image data, and the like.

[0024] To reconstruct CT image data, projection data for a full 360° scan around the subject or, in the case of the half-scan method, projection data for 180° plus the fan angle are required. Any reconstruction method can be applied to the present embodiment. Hereinafter, for simplicity of explanation, a reconstruction (full-scan reconstruction) method using projection data for a full 360° scan around the subject will be used.

[0025] The signal processing unit 109 may have an image processing function. Based on an input operation received from an operator via an input interface by means of the image processing function, the signal processing unit 109 can convert the CT image data generated by the reconstruction processing function into image data such as a tomographic image of an arbitrary cross-section or a three-dimensional image by rendering processing by a known method. Also, the signal processing unit 109 can store the converted image data in a memory by means of the image processing function.

[0026] The control unit 111 may have a scan control function. The control unit 111 controls the CT scan performed by the gantry device by means of the scan control function. For example, the control unit 111 controls the operations of the high-voltage generator 107, the radiation detection device 104, the DAS 108, and the bed drive device by means of the scan control function, thereby controlling the collection process of the counting results in the gantry device. To give an example, the control unit 111 controls the collection process of the projection data in the imaging for collecting the positioning image (scano image) and the main imaging (scan) for collecting the images used for diagnosis by means of the scan control function, respectively. Further, the control unit 111 may have a display control function. The control unit 111 can control the display of various image data stored in the memory on a display unit 110 such as a display by means of the display control function.

[0027] With reference to the perspective view of FIG. 2, a configuration example of the radiation detection device 104 will be described. This configuration is an example, and the radiation detection device 104 may have other configurations. The radiation detection device 104 includes a base 201 and a plurality of sensor modules 202. The base 201 has an arc shape that is concave with respect to the radiation 121. A plurality of sensor modules 202 are arranged and fixed along the circumferential direction on the curved surface of the base 201. The base 201 is fixed to the rotary frame 106.

[0028] With reference to the perspective view of FIG. 3, a configuration example of the sensor module 202 will be described. Each of the plurality of sensor modules 202 included in the radiation detection device 104 may have the configuration shown in FIG. 3, or at least a part of the plurality of sensor modules 202 may have other configurations.

[0029] The sensor module 202 shown in FIG. 3 includes a rigid member 301, a pair of electric circuit boards 302, electrodes 303, and a plurality of mini-sensor modules 304. The pair of electric circuit boards 302, the electrodes 303, and the plurality of mini-sensor modules 304 are attached to the rigid member 301. The rigid member 301 is attached to the base 201.

[0030] The mini-sensor module 304 is a type of sensor module for detecting radiation. In this specification, a prefix "mini" is added to clarify that the mini-sensor module 304 is a component of the sensor module 202. In the example of FIG. 3, eight mini-sensor modules 206 are attached to the rigid member 301. The number of mini-sensor modules 206 may be any number of one or more (typically two or more). In FIG. 3, for the purpose of explanation, the third mini-sensor module 206 from the left is shown in a state of being removed from the rigid member 301. The rigid member 301 may have pins 306 for positioning the mini-sensor module 304.

[0031] On the electric circuit board 302, circuit elements for generating signals for controlling the mini-sensor module 304, circuit elements for processing signals from the mini-sensor module 304, etc. are mounted. In FIG. 3, the front electric circuit board 302 of the pair of electric circuit boards 302 is mainly shown. The other electric circuit board 302 of the pair of electric circuit boards 302 is located behind the front electric circuit board 302 in FIG. 3. A connector 305 for connecting the mini-sensor module 304 is also mounted on the electric circuit board 302.

[0032] With reference to the cross-sectional view of FIG. 4, a configuration example of the mini-sensor module 304 will be described. Any of the plurality of mini-sensor modules 304 included in the radiation detection device 104 may have the configuration shown in FIG. 4. Instead of this, at least some of the plurality of mini-sensor modules 304 may have other configurations. The mini-sensor module 304 may include a semiconductor layer 401, an interposer 402, an integrated circuit 403, an electric circuit board 404, a heat dissipation member 405, a plurality of coupling members 409, and a plurality of coupling members 412. In the following description, the upper surface of each member in the drawing is referred to as the upper surface, and the lower surface of the drawing is referred to as the lower surface.

[0033] The semiconductor layer 401 constitutes a semiconductor detection unit that converts radiation into electric charges. The semiconductor layer 401 may be a single crystal substrate of a semiconductor that directly converts radiation into electric charges, such as cadmium zinc telluride (CdZnTe) or cadmium telluride (CdTe). The semiconductor layer 401 may also be a single crystal substrate of a semiconductor such as silicon (Si), lead iodide (PbI2), mercury iodide (HgI2), bismuth iodide (BiI3), thallium bromide (TlBr).

[0034] The semiconductor layer 401 includes a plurality of pixel regions 401a. The plurality of pixel regions 401a may be arranged, for example, in a two-dimensional array. The pitch of the plurality of pixel regions 401a (i.e., the pixel pitch) may be, for example, 100 μm or more. Each of the plurality of pixel regions 401a converts the radiation 121 into an electrical signal. The electrical signal generated in the pixel region 401a may be an electrical pulse generated when a radiation photon is incident on the semiconductor layer 401. Alternatively, the electrical signal generated in the pixel region 401a may be a voltage signal corresponding to the electric charge accumulated in the pixel region 401a. The electrical signal generated in each pixel region 401a represents the signal value of the pixel corresponding to the pixel region 401a in the radiation image. In the example of FIG. 4, all parts of the semiconductor layer 401 are included in one of the plurality of pixel regions 401a. Alternatively, the semiconductor layer 401 may include a part that is not included in any of the plurality of pixel regions 401a.

[0035] The upper surface of the semiconductor layer 401 is coupled to the upper electrode 406 by a coupling member 407. The coupling member 407 has conductivity. That is, the coupling member 407 is a conductive coupling member. The coupling member 407 may be a cured conductive adhesive. The upper electrode 406 is used to apply a voltage to the semiconductor layer 401. The upper electrode 406 may be composed of a metal, such as gold, silver, copper, aluminum, an alloy, or the like. One upper electrode 406 may be commonly provided for a plurality of mini-sensor modules 304 (for example, a plurality of mini-sensor modules 304 constituting the same sensor module 202). Instead of being coupled to the semiconductor layer 401 by the coupling member 407, the upper electrode 406 may be in direct contact with the semiconductor layer 401.

[0036] A plurality of metal pads 408 are provided on the lower surface of the semiconductor layer 401. The metal pads 408 function as lower electrodes of the radiation detection unit. It may be considered that the semiconductor detection unit is constituted by the semiconductor layer 401 and the plurality of metal pads 408. The plurality of metal pads 408 may correspond one-to-one to a plurality of pixel regions 401a of the semiconductor layer 401. An electrical signal generated in the pixel region 401a corresponding to the metal pad 408 is read out from one metal pad 408.

[0037] The integrated circuit 403 is attached to the electric circuit board 404. The integrated circuit 403 processes the electrical signal read out from the semiconductor layer 401. The integrated circuit 403 may be, for example, an application-specific integrated circuit (ASIC). The integrated circuit 403 may be an energy resolution counting circuit (ERCE). For example, the integrated circuit 403 may have a function of counting electrical pulses generated by the incidence of radiation photons on the semiconductor layer 401. Instead of this, the integrated circuit 403 may read out a voltage signal corresponding to the charge accumulated in the semiconductor layer 401 from the semiconductor layer 401. Further, the integrated circuit 403 may include an analog-to-digital converter.

[0038] The interposer 402 relays signals between the semiconductor layer 401 and the integrated circuit 403. The interposer 402 is a circuit component to which an electrical signal is transmitted from the semiconductor layer 401. A plurality of metal bumps 410 are formed on the upper surface of the interposer 402, and a plurality of metal pads 411 are formed on the lower surface of the interposer 402. The interposer 402, the plurality of metal bumps 410, and the plurality of metal pads 411 may be regarded as constituting a circuit component. The pitch of the plurality of metal bumps 410 is equal to the pixel pitch of the semiconductor layer 401. The pitch of the plurality of metal pads 411 is equal to the pitch of the plurality of electrodes 413 of the integrated circuit 403. The pitch of the plurality of metal pads 411 may be smaller than the pixel pitch of the semiconductor layer 401. The plurality of metal bumps 410 and the plurality of metal pads 411 are connected one-to-one by wirings within the interposer 402. Thus, the interposer 402 performs pitch conversion.

[0039] A plurality of coupling members 409 are located between the semiconductor layer 401 and the interposer 402. The plurality of coupling members 409 couple a plurality of metal pads 408 provided on the semiconductor layer 401 and a plurality of metal bumps 410 provided on the interposer 402. When the semiconductor layer 401 and the plurality of metal pads 408 are considered to constitute a semiconductor detection unit, and the plurality of metal bumps 410 are considered to constitute a part of the interposer 402, the plurality of coupling members 409 couple the semiconductor detection unit and the interposer 402. The plurality of coupling members 409 are separated and arranged so as to correspond to the plurality of pixel regions 401a of the semiconductor layer 401. Specifically, the plurality of coupling members 409 are arranged at positions corresponding to each of the plurality of pixel regions 401a in the semiconductor layer 401 and are separated from each other. There may be no other members in the gaps between the plurality of coupling members 409, or for example, air may enter. Each of the plurality of coupling members 409 couples one of the plurality of pixel regions 401a of the semiconductor layer 401 and one of the plurality of metal bumps 410 provided on the upper surface of the interposer 402. Each of the plurality of coupling members 409 has conductivity. That is, each of the plurality of coupling members 409 is a conductive coupling member. Each of the plurality of coupling members 409 may be a cured conductive adhesive. Each coupling member 409 transmits an electrical signal generated in each pixel region 401a to the interposer 402.

[0040] The plurality of coupling members 412 are located between the interposer 402 and the integrated circuit 403. The plurality of coupling members 412 are separated from each other. There may be no other members in the gaps between the plurality of coupling members 412, or for example, air may enter. The plurality of coupling members 412 couple the interposer 402 and the integrated circuit 403. Specifically, each of the plurality of coupling members 412 couples one of the plurality of metal pads 411 provided on the lower surface of the interposer 402 and one of the plurality of electrodes 413 provided on the upper surface of the integrated circuit 403. Each of the plurality of coupling members 412 has conductivity. That is, each of the plurality of coupling members 412 is a conductive coupling member. Each of the plurality of coupling members 412 may be a cured conductive adhesive. Each coupling member 412 transmits an electrical signal from the interposer 402 to the integrated circuit 403.

[0041] One end of a cable 414 is connected to the electric circuit board 404. A connector 415 is attached to the other end of this cable 414. The connector 415 is connected to the connector 305 of the electric circuit board 302. Information representing the charges detected by the semiconductor layer 401 is converted into a digital signal by the integrated circuit 403. This digital signal is read out into the circuit in the electric circuit board 302 through the cable 414, the connector 415, and the connector 305, and transferred to the DAS 108. The heat dissipation member 405 transfers the heat generated in the integrated circuit 403 and the electric circuit board 404 to the outside.

[0042] In the configuration example of FIG. 4, when the pitch of the plurality of electrodes 413 of the integrated circuit 403 is equal to the pitch of the plurality of pixel regions 401a, the interposer 402 may be omitted. In this case, the semiconductor layer 401 and the integrated circuit 403 may be coupled by the plurality of coupling members 409. In such a configuration, the integrated circuit 403 constitutes a circuit component to which an electrical signal is transmitted from the semiconductor layer 401.

[0043] In the configuration example of FIG. 4, a plurality of metal pads 408 may be omitted. In this case, a plurality of coupling members 409 may be directly coupled to the semiconductor layer 401. In the configuration example of FIG. 4, a plurality of metal pads may be provided on the upper surface of the interposer 402 instead of the plurality of metal bumps 410, and the plurality of coupling members 409 may be coupled to these plurality of metal pads.

[0044] Before the sensor module 202 is attached to the radiation detection device 104, by energizing the sensor module 202, it may be inspected whether each component of the sensor module 202 (for example, the mini sensor module 304) can operate normally. When an abnormality is found in the mini sensor module 304, the component causing the abnormality is replaced with a normal component. Thereby, the mini sensor module 304 is repaired.

[0045] Subsequently, the causes of possible failures in each component of the mini sensor module 304 will be described. The semiconductor layer 401 is formed of CdTe, CdZnTe, or the like as described above. These materials have the properties of being soft and brittle. Therefore, when cutting a crystal wafer into a desired size, chipping or cracking is likely to occur at the cutting site. Also, when incorporating the semiconductor layer 401 into the mini sensor module 304, there is a possibility that the semiconductor layer 401 may be damaged. In this case, the mini sensor module 304 is generated with the semiconductor layer 401 being damaged. Also, in the inspection of the sensor module 202, an abnormality may be found due to insufficient uniformity of the crystal density of the semiconductor layer 401.

[0046] Design problems of the interposer 402 can be inspected and verified at the drawing stage and can also be verified with prototypes. Therefore, the possibility of finding design problems during the inspection of the sensor module 202 is low. Also, manufacturing problems of the interposer 402 can be found by inspecting the interposer 402 alone, so the possibility of being found during the inspection of the sensor module 202 is low.

[0047] In the manufacturing process of the integrated circuit 403, inspections are carried out in accordance with manufacturing standards, so defective products are removed before being incorporated into the mini-sensor module 304. Even if abnormalities due to static electricity occur when the integrated circuit 403 is incorporated into the mini-sensor module 304, countermeasures against static electricity are taken when the abnormalities are detected, so it can be considered that the occurrence of problems is transient.

[0048] Since the electrical circuit board 404 can be subjected to shipping inspections after manufacturing, the possibility of defective products being incorporated into the mini-sensor module 304 is low. Also, the wiring formed on the electrical circuit board 404 is less likely to be damaged by static electricity. Moreover, by adopting multilayer wiring, many wirings can be arranged inside the electrical circuit board 404, so the resistance to static electricity is further enhanced.

[0049] The cable 414 has a structure in which, for example, metal wiring is sandwiched between sheet-like films on both the front and back sides. Since the cable 414 can exclude abnormal objects through connection inspections, the possibility of defective products being incorporated into the mini-sensor module 304 is low.

[0050] The connector 415 may be deformed or damaged at the contact part by repeated insertion and removal. However, in the radiation detection device 104, since the number of times the connector 415 is inserted and removed is small, the possibility of a failure occurring in the connector 415 is low.

[0051] The upper electrode 406 may be a structure in which a metal film slightly smaller than the outer size of the sheet-like film is bonded within the plane of the sheet-like film. Since the contact area with the coupling member 407 can be designed to be sufficient, the possibility that the function of applying a desired voltage is impaired is low.

[0052] The coupling member 407 is designed to have a size close to the metal film of the upper electrode 406. The coupling member 407 realizes conduction by mixing a substance on the micron order into an adhesive material or by the transfer of charges and electrons within the components of the material itself. By accurately designing the contact area with the metal sheet of the upper electrode 406 and the contact area with the semiconductor layer 401, the possibility of an abnormality occurring in the coupling member 407 is reduced.

[0053] The coupling members 409 and 412 may become abnormal when the bonding force unintentionally decreases. The unintentional decrease in the bonding force can be suppressed by performing material design and process / equipment design and through pre-verification.

[0054] The heat dissipation member 405 is designed to have a shape that can ensure the operating guarantee temperature of the electrical component. The heat dissipation member 405 may not have an electrical connection with other components. The possibility of an abnormality occurring in the heat dissipation member 405 is low.

[0055] As described above, the component most likely to have an abnormality in the mini sensor module 304 may be the semiconductor layer 401. Therefore, in some embodiments, the mini sensor module 304 is manufactured such that the semiconductor layer 401 can be replaced. Also, the component second most likely to have an abnormality in the mini sensor module 304 may be the integrated circuit 403. Therefore, in some embodiments, the mini sensor module 304 may be manufactured such that the integrated circuit 403 can be replaced.

[0056] Specifically, the plurality of coupling members 409 may be configured such that the coupling force decreases due to a stimulus applied to the plurality of coupling members 409. The stimulus for decreasing the coupling force of the coupling member 409 may include at least one of heating, adding water, dropping a solution, and light stimulation. The stimulus for decreasing the coupling force of the coupling member 409 may include applying tension. For example, the coupling member 409 may be configured such that the coupling force decreases to a strength that allows separation of the semiconductor layer 401 and the interposer 402 without damaging them by such a stimulus. Further, other circuit components (e.g., integrated circuit 403) of the mini sensor module 304 may not be damaged by such a stimulus. The coupling member 409 maintains the coupling force when no stimulus for decreasing the coupling force of the coupling member 409 is applied. By having such a property of the coupling member 409, when an abnormality is found in the semiconductor layer 401, the semiconductor layer 401 can be replaced while other components (e.g., interposer 402 and integrated circuit 403) can be reused.

[0057] In the configuration of FIG. 4, the semiconductor layer 401 and the interposer 402 are not an anisotropic conductive sheet but are coupled by a plurality of coupling members 409 separated from each other. Therefore, the area of the portion coupled by the plurality of coupling members 409 is smaller compared to the case of being coupled by an anisotropic conductive sheet. For this reason, the semiconductor layer 401 and the interposer 402 can be separated at a lower cost (e.g., shorter heating time, smaller amount of solution, etc.) compared to the case of being coupled by an anisotropic conductive sheet.

[0058] The coupling member 409 may be a binder resin containing a conductive filler. The conductive filler may include at least one of graphite, carbon black, carbon nanotubes, carbon fibers, gold, copper, nickel, aluminum, graphite, and microcapsules. That is, the conductive filler may be only any one of these materials or a mixture of these materials.

[0059] The binder resin may be a material having thermoplasticity, for example, any of a silicon-containing linking group resin system, a polyurethane-polyurea system, an unsaturated monocarboxylic acid, a polyimide, an unspecified polymer compound system, and an epoxy resin system. By forming the binder resin with such a material, the bonding force of the bonding member 409 decreases due to heating.

[0060] Examples of substances whose bonding force decreases due to heating include general-purpose plastics such as polyethylene and polypropylene, and engineering plastics such as polyamide and polycarbonate. Another example of substances whose bonding force decreases due to heating includes ammonium carbonate, ammonium bicarbonate, sodium bicarbonate, ammonium nitrite, and sodium borohydride. Still another example of substances whose bonding force decreases due to heating includes decomposition-type inorganic foaming agents such as azides, azo compounds, N-nitroso compounds, other low-boiling point compounds, and rubber-like substances.

[0061] When the bonding force of the bonding member 409 decreases due to heating, heat may be applied to the bonding member 409 by heating the semiconductor layer 401 using a hot plate or a soldering iron. Alternatively, the bonding member 409 may be locally heated using a hot gun.

[0062] When the bonding force of the bonding member 409 decreases due to heating, the bonding force of the bonding member 409 may be maintained at the temperature generated during the operation of the radiation detection device 104 and may decrease at a temperature higher than the said temperature. For example, in order to reduce the noise generated in the semiconductor layer 401, the radiation detection device 104 may be configured such that the temperature applied to the semiconductor layer 401 during the operation of the radiation detection device 104 is 40°C or lower. In such a case, the bonding member 409 may be configured such that the bonding force begins to decrease at a temperature higher than 40°C, for example, 60°C or higher, 80°C or higher, or 100°C or higher.

[0063] Also, if the temperature at which the bonding force of the coupling member 409 begins to decrease is too high, there is a risk of exceeding the heat resistance temperature of the components of the mini sensor module 304 (for example, the semiconductor layer 401, integrated circuit, metal bump 410). Therefore, the coupling member 409 may be configured to start decreasing the bonding force at a temperature of, for example, 140°C or lower, 120°C or lower, or 100°C or lower. As described above, the coupling member 409 may be configured to start decreasing the bonding force at a temperature of, for example, 60°C or higher and 140°C or lower (or a temperature in a narrower range than this).

[0064] Examples of substances whose bonding force decreases due to solution dropping include acrylic substances. When the bonding force of the coupling member 409 decreases due to solution dropping, a specific solution (for example, isopropyl alcohol, acetone, water, etc.) that decreases the bonding force of the coupling member 409 may be dropped onto the coupling member 409.

[0065] Examples of substances whose bonding force decreases due to light stimulation include epoxy substances. When the bonding force of the coupling member 409 decreases due to light stimulation, the coupling member 409 may be irradiated with light of a specific wavelength (for example, ultraviolet light, etc.).

[0066] The coupling member 407 may also be configured to have its bonding force decreased by a stimulus applied to the coupling member 407, similar to the coupling member 409. The stimulus for decreasing the bonding force of the coupling member 407 may include at least one of heating, adding water, solution dropping, and light stimulation. The stimulus for decreasing the bonding force of the coupling member 407 and the stimulus for decreasing the bonding force of the coupling member 409 may be of the same type or different types. For example, the coupling member 407 may be configured such that its bonding force decreases by heating, and the coupling member 409 may be configured such that its bonding force decreases by a stimulus other than heating (for example, adding water). In such a case, even if a stimulus is applied to the coupling member 409 to decrease the bonding force of the coupling member 407, the bonding force of the coupling member 409 is maintained.

[0067] When the stimuli for reducing the bonding force of the bonding member 407 and the stimuli for reducing the bonding force of the bonding member 409 are of the same type, the intensities of these stimuli may be the same or different. For example, the bonding member 407 may be configured to start reducing the bonding force at a certain temperature (e.g., 80 °C), and the bonding member 409 may be configured to start reducing the bonding force at another temperature (e.g., 100 °C).

[0068] As described above, the upper electrode 406 may be provided in common for a plurality of mini-sensor modules 304. In such a case, by setting the temperature at which the bonding force of the bonding member 407 starts to decrease to be lower than the temperature at which the bonding force of the bonding member 409 starts to decrease, the bonding force of the bonding member 407 can be decreased while maintaining the bonding force of the bonding member 409. As a result, when an abnormality is detected in a specific mini-sensor module 304 by inspection after the manufacture of the sensor module 202, the semiconductor layer 401 can be removed from the interposer 402 only in this mini-sensor module 304. Specifically, by decreasing the bonding force of the bonding member 407, the upper electrode 406 is removed from the sensor module 202. Thereafter, only the mini-sensor module 304 having the abnormality is removed from the rigid member 301, and the semiconductor layer 401 is removed by applying a stimulus only to the bonding member 407 of this mini-sensor module 304.

[0069] The bonding member 407 may be configured such that the bonding force decreases by heating. The thickness of the bonding member 407 can be formed thin in order to reduce the electrical resistance between the upper electrode 406 and the semiconductor layer 401. Therefore, it may be difficult for water, a solution, light, etc. to enter between the upper electrode 406 and the semiconductor layer 401. When the bonding force of the bonding member 407 decreases by heating, for example, the bonding force of the bonding member 407 can be decreased by applying heat to the bonding member 407 through the upper electrode 406.

[0070] The coupling member 412 may also be configured such that the coupling force decreases due to a stimulus applied to the coupling member 412, similar to the coupling member 409. The stimulus for decreasing the coupling force of the coupling member 412 may include at least one of heating, hydration, solution dropping, and light stimulation. The stimulus for decreasing the coupling force of the coupling member 412 and the stimulus for decreasing the coupling force of the coupling member 409 may be of the same type or different types. When the stimulus for decreasing the coupling force of the coupling member 412 and the stimulus for decreasing the coupling force of the coupling member 409 are of the same type, the intensities of these stimuli may be the same or different.

[0071] The interposer 402 and the integrated circuit 403 are less likely to be found abnormal in the post-manufacture inspection of the sensor module 202. The coupling member 412 may be configured such that the coupling force does not decrease due to a stimulus applied to the coupling member 412.

[0072] In the above-described mini sensor module 304, one layer of the coupling member 409 is disposed between the semiconductor layer 401 and the interposer 402. Alternatively, two or more layers of the coupling member 409 may be disposed between the semiconductor layer 401 and the interposer 402. For example, the mini sensor module 304 may include a plurality of additional metal bumps. The metal pad 408 and the additional metal bumps may be coupled by the coupling member 409, and the metal bump 410 and the additional metal bumps may be coupled by an additional coupling member 409.

[0073] With reference to FIG. 5, a method for manufacturing the radiation detection device 104 will be described. Since the steps after manufacturing the mini sensor module 304 may be the same as those of the existing manufacturing method, the method for manufacturing the mini sensor module 304 will be described below.

[0074] First, among the mini-sensor modules 304 shown in FIG. 4, a structure including an interposer 402, an integrated circuit 403, an electric circuit board 404, a heat dissipation member 405, a cable 414, and a connector 415 is manufactured. The interposer 402 is provided with a plurality of metal bumps 410 and a plurality of metal pads 411. The integrated circuit 403 is provided with a plurality of electrodes 413. The interposer 402 and the integrated circuit 403 are coupled by a plurality of coupling members 412.

[0075] Thereafter, as shown in FIG. 5(a), a conductive adhesive 501 is applied to each of the plurality of metal bumps 410. In FIGS. 5(a) to 5(c), in order to simplify the description, components located below the interposer 402 are omitted. As described above, instead of the plurality of metal bumps 410, a plurality of metal pads 410 may be provided on the interposer 402. The application of the conductive adhesive 501 may be performed by coating, by printing, or by other methods.

[0076] Thereafter, as shown in FIG. 5(b), the semiconductor layer 401 is attached to the interposer 402 to which the plurality of conductive adhesives 501 are applied. Thereby, the semiconductor detection unit composed of the semiconductor layer 401 and the plurality of metal pads 408 and the interposer 402 are arranged so as to sandwich the plurality of conductive adhesives 501. The plurality of conductive adhesives 501 are separately arranged so as to correspond to the plurality of pixel regions 401a of the semiconductor layer 401. When the semiconductor layer 401 is provided with a plurality of metal pads 408, the plurality of conductive adhesives 501 are respectively brought into contact with the plurality of metal pads 408. When the semiconductor layer 401 is not provided with a plurality of metal pads 408, the plurality of conductive adhesives 501 are directly brought into contact with the semiconductor layer 401.

[0077] By using a plurality of conductive adhesives 501 separated from each other instead of an anisotropic conductive sheet as in this method, conductivity is achieved without strongly pressing the semiconductor layer 401 against the interposer 402. Thereby, the possibility of damage to the semiconductor layer 401 can be reduced.

[0078] Thereafter, as shown in FIG. 5(c), by curing a plurality of conductive adhesives 501, a plurality of bonding members 409 are formed that bond a semiconductor detection unit composed of a semiconductor layer 401 and a plurality of metal pads 408 and an interposer 402. The curing of the conductive adhesive 501 may be performed by drying, application of a solution, irradiation with light, or the like. Thereafter, the mini sensor module 304 in which components other than the upper electrode 406 are formed is attached to the rigid member 301, and the upper electrode 406 is commonly bonded to the plurality of mini sensor modules 304. As described above, by applying the plurality of conductive adhesives 501 to the interposer 402 prior to the semiconductor layer 401, the possibility of damage to the semiconductor layer 401 can be reduced compared to the reverse case.

[0079] In the process shown in FIG. 5(a) described above, the conductive adhesive 501 may be applied to the semiconductor layer 401 (specifically, its plurality of metal pads 408) instead of the interposer 402. Thereafter, in the process shown in FIG. 5(b), the interposer 402 may be attached to the semiconductor layer 401 to which the plurality of conductive adhesives 501 are applied.

[0080] Referring to FIG. 6, a repair method for the radiation detection device 104 will be described. Assume that an abnormality is found in the semiconductor layer 401 of a specific mini sensor module 304 by inspection after manufacturing the sensor module 202. In FIGS. 6(a) to 6(c), components located below the interposer 402 are omitted for simplicity of explanation.

[0081] By applying a stimulus to the bonding member 407 of the sensor module 202 shown in FIG. 6(a), the bonding force of the bonding member 407 is reduced. As a result, the upper electrode 406 can be removed without damaging components other than the bonding member 407. When the bonding force of the bonding member 407 is reduced by heating, for example, heat may be applied to the bonding member 407 through the upper electrode 406. Thereafter, the upper electrode 406 is removed, and the mini sensor module 304 in which the abnormality is found is removed from the rigid member 301.

[0082] Thereafter, by applying a stimulus to a plurality of coupling members 409 of the mini sensor module 304 shown in FIG. 6(b), the coupling force of the plurality of coupling members 409 is reduced. When the coupling force of the plurality of coupling members 409 is reduced by heating, for example, heat may be applied to the plurality of coupling members 409 through the semiconductor layer 401. Thereby, the semiconductor layer 401 can be removed without damaging components other than the coupling member 409. When an abnormality has occurred in the semiconductor layer 401, the semiconductor layer 401 may be further damaged.

[0083] Thereby, as shown in FIG. 6(c), a structure in which the semiconductor layer 401 is removed from the mini sensor module 304 is obtained. Thereafter, in the same manner as the description of FIG. 5, a new plurality of coupling members 409 and a new semiconductor layer 401 are attached to the interposer 402. Thereafter, the upper electrode 406 removed in FIG. 6(a) may be attached to the plurality of mini sensor modules 304 in common again.

[0084] By the above method, the semiconductor layer 401 in which an abnormality has occurred can be replaced while reusing normal components. When an abnormality has occurred in the integrated circuit 403, the integrated circuit 403 may be replaced while reusing the semiconductor layer 401, the interposer 402, and the electric circuit board 404 by reducing the coupling force with both of the plurality of coupling members 412. When an abnormality has occurred in the interposer 402, similarly, the interposer 402 may be replaced while reusing the semiconductor layer 401, the integrated circuit 403, and the electric circuit board 404.

[0085] <Other Embodiments> [Item 1] A radiation detection device, comprising: a semiconductor detection unit having a plurality of pixel regions that convert radiation into an electrical signal; circuit components to which the electrical signal is transmitted from the semiconductor detection unit; a plurality of conductive coupling members that couple the semiconductor detection unit and the circuit components. The plurality of conductive coupling members are separately arranged so as to correspond to the plurality of pixel regions of the semiconductor detection unit. The plurality of conductive coupling members are configured such that the coupling force decreases by a stimulus, and the radiation detection device. [Item 2] The plurality of conductive coupling members are configured such that the coupling force decreases to a separable strength without damaging the semiconductor detection unit and the circuit components by the stimulus, in the radiation detection device according to Item 1. [Item 3] The plurality of conductive coupling members are configured such that the coupling force is maintained at a temperature generated during operation of the radiation detection device, and the coupling force decreases at a temperature higher than the temperature, in the radiation detection device according to Item 1 or 2. [Item 4] The plurality of conductive coupling members are configured such that the coupling force begins to decrease at a temperature of 60°C or higher and 140°C or lower, in the radiation detection device according to any one of Items 1 to 3. [Item 5] The radiation detection device A plurality of sensor modules each having the semiconductor detection unit, the circuit components, and the plurality of conductive coupling members; Electrodes commonly provided for the plurality of sensor modules; A second conductive coupling member that couples the semiconductor detection unit and the electrode of the plurality of sensor modules, and includes: The second conductive coupling member is configured such that the coupling force decreases by a given second stimulus. The plurality of conductive coupling members are configured such that the coupling force is maintained with respect to the second stimulus, in the radiation detection device according to any one of Items 1 to 4. [Item 6] The second conductive coupling member is configured such that the coupling force begins to decrease at a first temperature. The plurality of conductive coupling members are configured such that the coupling force begins to decrease at a second temperature higher than the first temperature, in the radiation detection device according to Item 5. [Item 7] The circuit component is an interposer, The radiation detection device, further includes an integrated circuit that processes the electrical signal, and a third conductive coupling member that couples the interposer and the integrated circuit, The radiation detection device according to any one of items 1 to 6, wherein the third conductive coupling member is configured such that the coupling force decreases by a given third stimulus. [Item 8] The radiation detection device according to any one of items 1 to 7, wherein the plurality of conductive coupling members are coupled to a plurality of metal pads provided on the semiconductor detection unit. [Item 9] The radiation detection device according to any one of items 1 to 8, wherein the plurality of conductive coupling members are coupled to a plurality of metal bumps provided on the circuit component. [Item 10] The radiation detection device according to any one of items 1 to 9, wherein the plurality of conductive coupling members are a binder resin containing a conductive filler. [Item 11] The radiation detection device according to item 10, wherein the conductive filler includes at least one of graphite, carbon black, carbon nanotubes, carbon fibers, gold, silver, copper, nickel, aluminum, graphite, and microcapsules. [Item 12] The radiation detection device according to item 10 or 11, wherein the binder resin has thermoplasticity. [Item 13] The radiation detection device according to any one of items 1 to 12, wherein the stimulus includes at least one of heating, adding water, dropping a solution, and light stimulation. [Item 14] The radiation detection device according to item 1, wherein the plurality of conductive coupling members are respectively arranged at positions corresponding to the plurality of pixel regions in the semiconductor detection unit and separated from each other. [Item 15] The radiation detection device according to any one of items 1 to 14, A radiation generation unit that irradiates radiation toward the radiation detection device, A signal processing unit that processes a signal output from the radiation detection device, A CT device comprising the above. [Item 16] The radiation detection device is a photon counting type radiation detection device, The signal processing unit generates image data using a counting result of radiation photons derived from radiation that has passed through a subject, the CT device according to Item 15. [Item 17] A sensor module, A semiconductor detection unit having a plurality of pixel regions that convert radiation into an electrical signal, Circuit components to which the electrical signal is transmitted from the semiconductor detection unit, A plurality of conductive coupling members that couple the semiconductor detection unit and the circuit components, The plurality of conductive coupling members are separately arranged so as to correspond to the plurality of pixel regions of the semiconductor detection unit, The plurality of conductive coupling members are configured such that the coupling force decreases by stimulation, a sensor module. [Item 18] A method for manufacturing a radiation detection device, An arrangement step of arranging a semiconductor detection unit having a plurality of pixel regions that convert radiation into an electrical signal and circuit components to which the electrical signal is transmitted from the semiconductor detection unit so as to sandwich a plurality of conductive adhesives, A curing step of forming a plurality of conductive coupling members that couple the semiconductor detection unit and the circuit components by curing the plurality of conductive adhesives, The plurality of conductive adhesives are separately arranged so as to correspond to the plurality of pixel regions of the semiconductor detection unit, The plurality of conductive coupling members are configured such that the coupling force decreases by stimulation, a manufacturing method. [Item 19] The arrangement step includes, A step of applying the plurality of conductive adhesives to the circuit components, The manufacturing method according to item 18, comprising the step of attaching the semiconductor detection unit to the circuit component to which the plurality of conductive adhesives are applied.

[0086] The invention is not limited to the above embodiments, and various changes and modifications are possible without departing from the spirit and scope of the invention. Therefore, the claims are attached to disclose the scope of the invention.

Description of reference numerals

[0087] 100 CT apparatus, 104 radiation detection apparatus, 202 sensor module, 304 mini-sensor module

Claims

1. A radiation detection device, comprising: a semiconductor detection unit having a plurality of pixel regions that convert radiation into an electrical signal; circuit components to which the electrical signal is transmitted from the semiconductor detection unit; a plurality of conductive coupling members that couple the semiconductor detection unit and the circuit components, wherein the plurality of conductive coupling members are separately arranged so as to correspond to the plurality of pixel regions of the semiconductor detection unit, and the plurality of conductive coupling members are configured such that the coupling force decreases by stimulation, the radiation detection device.

2. The radiation detection device according to claim 1, wherein the plurality of conductive coupling members are configured such that the coupling force decreases to a strength that allows separation without damaging the semiconductor detection unit and the circuit components by the stimulation.

3. The radiation detection device according to claim 1, wherein the plurality of conductive coupling members are configured such that the coupling force is maintained at a temperature generated during operation of the radiation detection device, and the coupling force decreases at a temperature higher than the temperature.

4. The radiation detection device according to claim 1, wherein the plurality of conductive coupling members are configured such that the coupling force begins to decrease at a temperature of 60°C or higher and 140°C or lower.

5. The radiation detection device further comprises: a plurality of sensor modules each having the semiconductor detection unit, the circuit components, and the plurality of conductive coupling members; an electrode commonly provided for the plurality of sensor modules; and a second conductive coupling member that couples the semiconductor detection unit of the plurality of sensor modules and the electrode, wherein the second conductive coupling member is configured such that the coupling force decreases by a given second stimulation, and the plurality of conductive coupling members are configured such that the coupling force is maintained with respect to the second stimulation, the radiation detection device according to claim 1.

6. The second conductive coupling member is configured such that the coupling force begins to decrease at a first temperature, and the plurality of conductive coupling members are configured such that the coupling force begins to decrease at a second temperature higher than the first temperature, the radiation detection device according to claim 5.

7. The circuit component is an interposer, and the radiation detection device further comprises: an integrated circuit that processes the electrical signal; and a third conductive coupling member that couples the interposer and the integrated circuit, wherein the third conductive coupling member is configured such that the coupling force decreases by a given third stimulation, the radiation detection device according to claim 1.

8. The radiation detection device according to claim 1, wherein the plurality of conductive coupling members are coupled to a plurality of metal pads provided on the semiconductor detection unit.

9. The radiation detection device according to claim 1, wherein the plurality of conductive coupling members are coupled to a plurality of metal bumps provided on the circuit component.

10. The radiation detection device according to claim 1, wherein the plurality of conductive coupling members are a binder resin containing a conductive filler.

11. The radiation detection device according to claim 10, wherein the conductive filler includes at least one of graphite, carbon black, carbon nanotube, carbon fiber, gold, silver, copper, nickel, aluminum, graphite, and microcapsules.

12. The radiation detection device according to claim 10, wherein the binder resin has thermoplasticity.

13. The radiation detection device according to claim 1, wherein the stimulus includes at least one of heating, hydration, solution dropping, and light stimulation.

14. The radiation detection device according to claim 1, wherein the plurality of conductive coupling members are respectively arranged at positions corresponding to the plurality of pixel regions in the semiconductor detection unit and separated from each other.

15. A radiation detection device according to any one of claims 1 to 14, a radiation generation unit that irradiates radiation toward the radiation detection device, a signal processing unit that processes a signal output from the radiation detection device, and a CT device comprising the same.

16. The radiation detection device is a radiation detection device using a photon counting method, The CT device according to claim 15, wherein the signal processing unit generates image data using a counting result of radiation photons derived from radiation that has passed through a subject.

17. A sensor module, comprising: a semiconductor detection unit having a plurality of pixel regions that convert radiation into an electrical signal; a circuit component to which the electrical signal is transmitted from the semiconductor detection unit; and a plurality of conductive coupling members that couple the semiconductor detection unit and the circuit component, wherein the plurality of conductive coupling members are arranged separately so as to correspond to the plurality of pixel regions of the semiconductor detection unit, and the plurality of conductive coupling members are configured such that the coupling force decreases by a stimulus.

18. A method for manufacturing a radiation detection device, comprising: An arrangement step of arranging a semiconductor detection unit having a plurality of pixel regions that convert radiation into an electrical signal and circuit components to which the electrical signal is transmitted from the semiconductor detection unit so as to sandwich a plurality of conductive adhesives; A curing step of forming a plurality of conductive coupling members that couple the semiconductor detection unit and the circuit components by curing the plurality of conductive adhesives; and The plurality of conductive adhesives are separately arranged so as to correspond to the plurality of pixel regions of the semiconductor detection unit; The plurality of conductive coupling members are configured such that the coupling force decreases due to stimulation. A manufacturing method.

19. The arrangement step includes: A step of applying the plurality of conductive adhesives to the circuit components; The manufacturing method according to claim 18, further including a step of attaching the semiconductor detection unit to the circuit components to which the plurality of conductive adhesives have been applied.

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