Display device

Abstract

To efficiently use a region in which an active layer is not formed.SOLUTION: A semiconductor device includes first and second conductive layers over an insulating surface, a first insulating layer over the first and second conductive layers, first and second oxide semiconductor layers over the first insulating layer, third and fourth conductive layers over the first oxide semiconductor layer, a second insulating layer over the third and fourth conductive layers, and a fifth conductive layer over the second insulating layer. In the semiconductor device, the third conductive layer is electrically connected to the second conductive layer; the fifth conductive layer is electrically connected to the fourth conductive layer; the first oxide semiconductor layer has a region overlapping with the first conductive layer; the second oxide semiconductor layer has a region overlapping with the fifth conductive layer; and the second oxide semiconductor layer has a region intersecting with the second conductive layer.SELECTED DRAWING: Figure 25

Description

[Technical Field]

[0001] The technical field relates to semiconductor devices. [Background technology]

[0002] Patent Documents 1 and 2 disclose a transistor having an active layer with an oxide semiconductor layer. A semiconductor device having the same is described.

[0003] The active layer is a semiconductor layer having at least a channel formation region.

[0004] The channel forming region is a region in which a channel can be formed.

[0005] In paragraph 0010 of Patent Document 1, it is stated that "H2O contained in the formed oxide semiconductor film compounds containing hydrogen atoms, alkali metals, or alkaline earth metals Impurities such as compounds containing metalloids increase the carrier density of the oxide semiconductor film. It is listed.

[0006] In paragraph 0010 of Patent Document 2, it is stated that "hydrogen elements act as carriers (donors) in the oxide semiconductor layer. It states, "(This is the case when the [Prior art documents] [Patent documents]

[0007] [Patent Document 1] Japanese Patent Application Laid-Open No. 2012-072493 [Patent Document 2] Japanese Patent Application Laid-Open No. 2011-142311 Summary of the Invention [Problem to be solved by the invention]

[0008] It is an object to effectively utilize a region where an active layer is not formed.

Means for Solving the Problem

[0009] It is preferable to form an electrode having a semiconductor layer in a region where an active layer is not formed.

[0010] The electrode is, for example, an electrode of a capacitive element, an electrode of a display element, an electrode of a memory element, an electrode of a photoelectric conversion element, etc., but is not limited thereto. There are electrodes such as electrodes, etc., but it is not limited.

[0011] When the active layer has an oxide semiconductor layer, it is preferable to form an electrode having an oxide semiconductor layer in the same process as the active layer having an oxide semiconductor layer, because the number of processes can be reduced. Since the oxide semiconductor layer has translucency, it is preferable to form an electrode having translucency by forming an electrode having an oxide semiconductor layer.

[0012] Since the oxide semiconductor layer has translucency, it is preferable to form an electrode having translucency by forming an electrode having an oxide semiconductor layer. Since the electrode having an oxide semiconductor layer has a large resistance value, it is preferable to increase the area of the electrode having an oxide semiconductor layer.

[0013] Since the electrode having an oxide semiconductor layer has a large resistance value, it is preferable to provide an auxiliary wiring.

[0014] Since the electrode having an oxide semiconductor layer has a large resistance value, it is preferable to contain an alkali metal, an alkaline earth metal, hydrogen, etc. in the electrode having an oxide semiconductor layer. .

[0015] Since the electrode having an oxide semiconductor layer has a large resistance value, it is preferable to contain an alkali metal, an alkaline earth metal, hydrogen, etc. in the electrode having an oxide semiconductor layer.

[0016] Alkali metals, alkaline earth metals, hydrogen, etc. can become carriers in the oxide semiconductor layer.

[0017] ​​​For example, it has a first conductive layer on an insulating surface, has a second conductive layer on the insulating surface, and has a first insulating layer on the first conductive layer and on the second conductive layer, and has a first oxide semiconductor layer on the first insulating layer, has a second oxide semiconductor layer on the first insulating layer, has a third conductive layer on the first oxide semiconductor layer, has a fourth conductive layer on the first oxide semiconductor layer, has a second insulating layer on the third conductive layer and on the fourth conductive layer, has a fifth conductive layer on the second insulating layer, the third conductive layer is electrically connected to the second conductive layer, the fifth conductive layer is electrically connected to the fourth conductive layer, at least a part of the first conductive layer has a function as a gate electrode of a transistor, at least a part of the third conductive layer has a function as one of a source electrode or a drain electrode of the transistor, at least a part of the fourth conductive layer has a function as the other of the source electrode or the drain electrode of the transistor, the first oxide semiconductor layer has a region overlapping with the first conductive layer, the second oxide semiconductor layer has a region overlapping with the fifth conductive layer, and the second oxide semiconductor layer has a region intersecting with the second conductive layer. A semiconductor device can be provided. has a first insulating layer on the first conductive layer and on the second conductive layer, and has a first oxide semiconductor layer on the first insulating layer has a second oxide semiconductor layer on the first insulating layer, has a third conductive layer on the first oxide semiconductor layer, has a fourth conductive layer on the first oxide semiconductor layer has a third conductive layer on the first oxide semiconductor layer, has a fourth conductive layer on the first oxide semiconductor layer has a second insulating layer on the third conductive layer and on the fourth conductive layer, has a fifth conductive layer on the second insulating layer, the third conductive layer is electrically connected to the second conductive layer, the fifth conductive layer is electrically connected to the fourth conductive layer has a fifth conductive layer on the second insulating layer, the third conductive layer is electrically connected to the second conductive layer, the fifth conductive layer is electrically connected to the fourth conductive layer the third conductive layer is electrically connected to the second conductive layer, the fifth conductive layer is electrically connected to the fourth conductive layer, at least a part of the first conductive layer has a function as a gate electrode of a transistor at least a part of the first conductive layer has a function as a gate electrode of a transistor at least a part of the third conductive layer has a function as one of a source electrode or a drain electrode of the transistor at least a part of the third conductive layer has a function as one of a source electrode or a drain electrode of the transistor, at least a part of the fourth conductive layer has a function as the other of the source electrode or the drain electrode of the transistor at least a part of the fourth conductive layer has a function as the other of the source electrode or the drain electrode of the transistor, the first oxide semiconductor layer has a region overlapping with the first conductive layer the first oxide semiconductor layer has a region overlapping with the first conductive layer, the second oxide semiconductor layer has a region overlapping with the fifth conductive layer the second oxide semiconductor layer has a region overlapping with the fifth conductive layer, the second oxide semiconductor layer has a region intersecting with the second conductive layer the second oxide semiconductor layer has a region intersecting with the second conductive layer. A semiconductor device can be provided.

[0018] For example, it has a first conductive layer on an insulating surface, has a second conductive layer on the insulating surface, and has a first insulating layer on the first conductive layer and on the second conductive layer, and has a first oxide semiconductor layer on the first insulating layer, has a second oxide semiconductor layer on the first insulating layer, has a third conductive layer on the first oxide semiconductor layer, has a fourth conductive layer on the first oxide semiconductor layer has a first insulating layer on the first conductive layer and on the second conductive layer, and has a first oxide semiconductor layer on the first insulating layer has a second oxide semiconductor layer on the first insulating layer, has a third conductive layer on the first oxide semiconductor layer, has a fourth conductive layer on the first oxide semiconductor layer has a third conductive layer on the first oxide semiconductor layer, has a fourth conductive layer on the first oxide semiconductor layer It has an electric layer, has a sixth conductive layer on the second oxide semiconductor layer, and on the third conductive layer, on the fourth conductive layer, and has a second insulating layer on the sixth conductive layer, and the second insulating layer has a fifth conductive layer thereon. The third conductive layer is electrically connected to the second conductive layer and the fifth conductive layer is electrically connected to the fourth conductive layer. At least a part of the first conductive layer functions as a gate electrode of a transistor, and at least a part of the third conductive layer functions as one of a source electrode or a drain electrode of the transistor and at least a part of the fourth conductive layer functions as the other of the source electrode or the drain electrode of the transistor. At least a part of the sixth conductive layer functions as an auxiliary wiring. The first oxide semiconductor layer has a region overlapping with the first conductive layer, and the second oxide semiconductor layer has a region overlapping with the fifth conductive layer. The second oxide semiconductor layer has a region intersecting with the second conductive layer. A semiconductor device characterized by this can be provided.

[0019] The first oxide semiconductor layer has a first alkali metal concentration, the second oxide semiconductor layer has a second alkali metal concentration, and it is preferable that the second alkali metal concentration is higher than the first alkali metal concentration.

[0020] The first oxide semiconductor layer has a first alkaline earth metal concentration, the second oxide semiconductor layer has a second alkaline earth metal concentration, and it is preferable that the second alkaline earth metal concentration is higher than the first alkaline earth metal concentration.

[0021] The first oxide semiconductor layer has a first hydrogen concentration, and the second oxide semiconductor layer has a second hydrogen concentration, and it is preferable that the second hydrogen concentration is higher than the first hydrogen concentration. Preferably.

[0022] At least a part of the fifth conductive layer functions as one electrode of the display element, and at least a part of the fifth conductive layer functions as one electrode of the capacitive element, and at least a part of the second oxide semiconductor layer functions as the other electrode of the display element and at least a part of the second oxide semiconductor layer preferably functions as the other electrode of the capacitive element. Preferably.

Advantages of the Invention

[0023] An area where the active layer is not formed can be effectively utilized.

Brief Description of the Drawings

[0024]

Figure 1

Figure 2

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Figure 4

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Figure 7

Figure 8

Figure 9

Figure 10

Figure 11

Figure 12

Figure 13

Figure 14

Figure 15

Figure 16

Figure 17

Figure 18

Figure 19

Figure 20

Figure 21

Figure 22

Figure 23

Figure 24

Figure 25

Figure 26

Figure 27

Figure 28

Figure 29

Figure 30

Figure 31

Figure 32

Embodiments for Carrying Out the Invention

[0025] The embodiments will be described in detail with reference to the drawings.

[0026] However, it is easily understood by those skilled in the art that the form and details can be variously changed without departing from the gist of the invention. Those skilled in the art will easily understand this.

[0027] Therefore, the scope of the invention should not be construed as being limited to the description of the embodiments shown below. No.

[0028] In the configurations described below, for parts having the same portion, similar functions, or the same material, the same reference numerals or the same hatching are commonly used across different drawings, and the repeated description thereof is omitted.

[0029] The following embodiments can be implemented by appropriately combining some or all of them.

[0030] (Embodiment 1) An example of a semiconductor device will be described with reference to FIGS. 1 to 3.

[0031] FIG. 2 is an example of a cross-sectional view of the A-B cross-section of FIG. 1.

[0032] FIG. 3 is an example of a cross-sectional view of the C-D cross-section of FIG. 1.

[0033] The first direction 8001 intersects the second direction 8002.

[0034] The substrate 101 has an insulating surface.

[0035] A conductive layer 201 is provided on the insulating surface.

[0036] A conductive layer 211 is provided on the insulating surface.

[0037] A conductive layer 212 is provided on the insulating surface.

[0038] A conductive layer 213 is provided on the insulating surface.

[0039] An insulating layer 300 is provided on the conductive layer 211, the conductive layer 212, and the conductive layer 213.

[0040] The insulating layer 300 has a plurality of openings (contact holes).

[0041] An oxide semiconductor layer 301 is provided on the insulating layer 300.

[0042] It has an oxide semiconductor layer 310 on an insulating layer 300.

[0043] It has a conductive layer 501 on an oxide semiconductor layer 301.

[0044] It has a conductive layer 502 on an oxide semiconductor layer 301.

[0045] It has a conductive layer 503 formed in the same process as the conductive layer 501 and the conductive layer 502.

[0046] The conductive layer 501 is electrically connected to the conductive layer 211 through one of the openings of the insulating layer 300. connected.

[0047] The conductive layer 501 is electrically connected to the conductive layer 212 through one of the openings of the insulating layer 300. connected.

[0048] The conductive layer 503 is electrically connected to the conductive layer 212 through one of the openings of the insulating layer 300. connected.

[0049] The conductive layer 503 is electrically connected to the conductive layer 213 through one of the openings of the insulating layer 300. connected.

[0050] One end of the conductive layer 501 is electrically connected to the conductive layer 211.

[0051] The other end of the conductive layer 501 is electrically connected to the conductive layer 212.

[0052] One end of the conductive layer 503 is electrically connected to the conductive layer 212.

[0053] The other end of the conductive layer 503 is electrically connected to the conductive layer 213.

[0054] It has an insulating layer 500 on the conductive layer 501, the conductive layer 502, and the conductive layer 503.

[0055] The insulating layer 500 has a plurality of openings (contact holes).

[0056] A conductive layer 701 is provided on the insulating layer 500.

[0057] The conductive layer 701 is electrically connected to the conductive layer 502 through one of the openings of the insulating layer 500. connected.

[0058] A liquid crystal layer 800 is provided on the conductive layer 701.

[0059] A conductive layer 900 is provided on the liquid crystal layer 800.

[0060] A substrate 102 is provided on the conductive layer 900.

[0061] The conductive layer 900 is formed on the surface of the substrate 102.

[0062] The liquid crystal layer 800 is sandwiched between the conductive layer 701 and the conductive layer 900.

[0063] It is preferable to have an alignment film between the conductive layer 701 and the liquid crystal layer 800.

[0064] It is preferable to have an alignment film between the conductive layer 900 and the liquid crystal layer 800.

[0065] The oxide semiconductor layer 301 has a region overlapping with the conductive layer 201.

[0066] The oxide semiconductor layer 310 has a region overlapping with the conductive layer 201.

[0067] The oxide semiconductor layer 310 has a region overlapping with the conductive layer 211.

[0068] The oxide semiconductor layer 310 has a region overlapping with the conductive layer 212.

[0069] The oxide semiconductor layer 310 has a region overlapping with the conductive layer 213.

[0070] The oxide semiconductor layer 310 has a region that intersects with the conductive layer 201.

[0071] The oxide semiconductor layer 310 has a region that intersects with the conductive layer 211.

[0072] The oxide semiconductor layer 310 has a region that intersects with the conductive layer 212.

[0073] The oxide semiconductor layer 310 has a region that intersects with the conductive layer 213.

[0074] The oxide semiconductor layer 310 has a region that overlaps with the conductive layer 701.

[0075] The conductive layer 501 has a region that overlaps with the conductive layer 201.

[0076] The conductive layer 501 has a region that intersects with the conductive layer 201.

[0077] The conductive layer 201 is arranged such that its longitudinal direction is parallel to the first direction 8001.

[0078] The conductive layer 211 is arranged such that its longitudinal direction is parallel to the second direction 8002.

[0079] The conductive layer 212 is arranged such that its longitudinal direction is parallel to the second direction 8002.

[0080] The conductive layer 213 is arranged such that its longitudinal direction is parallel to the second direction 8002.

[0081] The conductive layer 501 is arranged such that its longitudinal direction is parallel to the second direction 8002.

[0082] The conductive layer 502 is arranged such that its longitudinal direction is parallel to the first direction 8001.

[0083] The conductive layer 503 is arranged such that its longitudinal direction is parallel to the second direction 8002.

[0084] The first direction 8001 is a direction intersecting the second direction 8002.

[0085] Figs. 1 to 3 are examples of a liquid crystal display device which is one type of semiconductor device.

[0086] Fig. 4 shows an example of a pixel circuit of the liquid crystal display device.

[0087] The wiring L1 is electrically connected to the gate of the transistor Tr.

[0088] The wiring L2 is electrically connected to one of the source or drain of the transistor Tr .

[0089] The other of the source or drain of the transistor Tr is electrically connected to one of the electrodes of the liquid crystal element LC.

[0090] The other of the source or drain of the transistor Tr is electrically connected to one of the electrodes of the capacitor element C.

[0091] The wiring L3 is electrically connected to the other electrode of the liquid crystal element LC.

[0092] The wiring L4 is electrically connected to the other electrode of the capacitor element C.

[0093] The wirings L1, L2, L3, and L4 have a function of being able to transmit signals, voltages, or currents thereto.

[0094] The wirings L1, L2, L3, and L4 have a function of being able to reach a predetermined potential thereof.

[0095] By changing or fixing the electrical state (signal, voltage, current, or potential) of wiring L1, the on and off states of transistor Tr can be controlled.

[0096] Wiring L1 is called a gate wiring, a scanning line, or the like.

[0097] By changing or fixing the electrical state (signal, voltage, current, or potential) of wiring L2, the driving of liquid crystal element LC can be controlled.

[0098] By changing or fixing the electrical state (signal, voltage, current, or potential) of wiring L2, electric charge can be accumulated in capacitor element C.

[0099] Wiring L2 is called a source wiring, a drain wiring, a signal line, or the like.

[0100] By changing or fixing the electrical state (signal, voltage, current, or potential) of wiring L3, the driving of liquid crystal element LC can be controlled.

[0101] Wiring L3 is called a common wiring, a common electrode, or the like.

[0102] By changing or fixing the electrical state (signal, voltage, current, or potential) of wiring L4, electric charge can be accumulated in capacitor element C.

[0103] Wiring L4 is called a capacitor wiring, or the like.

[0104] Wiring L3 and wiring L4 may be electrically connected.

[0105] The relationship between FIGS. 1 to 3 and FIG. 4 will be described below.

[0106] At least a part of conductive layer 201 functions as a gate electrode of transistor Tr can be achieved.

[0107] At least a part of the conductive layer 201 can function as the wiring L1.

[0108] At least a part of the conductive layer 211 can function as the wiring L2.

[0109] At least a part of the conductive layer 212 can function as the wiring L2.

[0110] At least a part of the conductive layer 213 can function as the wiring L2.

[0111] The conductive layer 201, the conductive layer 211, the conductive layer 212, and the conductive layer 213 are preferably formed in the same process. That is, it is preferable that the conductive layer 201, the conductive layer 211, the conductive layer 212, and the conductive layer 213 have the same material.

[0112] That is, it is preferable that the conductive layer 201, the conductive layer 211, the conductive layer 212, and the conductive layer 213 have the same material. That is, it is preferable that the conductive layer 201, the conductive layer 211, the conductive layer 212, and the conductive layer 213 have the same material.

[0113] At least a part of the insulating layer 300 can function as the gate insulating film of the transistor Tr. can be achieved.

[0114] At least a part of the oxide semiconductor layer 301 can function as the active layer of the transistor Tr. can be achieved.

[0115] That is, the oxide semiconductor layer 301 has at least a channel formation region.

[0116] At least a part of the oxide semiconductor layer 310 can function as the other electrode of the capacitor element C. can be achieved.

[0117] At least a part of the oxide semiconductor layer 310 can function as the wiring L4.

[0118] The oxide semiconductor layer 301 and the oxide semiconductor layer 310 are preferably formed in the same process. .

[0119] That is, the oxide semiconductor layer 301 and the oxide semiconductor layer 310 preferably have the same material. .

[0120] At least a part of the conductive layer 501 can function as one of the source electrode or the drain electrode of the transistor Tr.

[0121] At least a part of the conductive layer 501 can function as the wiring L2.

[0122] At least a part of the conductive layer 502 can function as the other of the source electrode or the drain electrode of the transistor Tr.

[0123] At least a part of the conductive layer 503 can function as the wiring L2.

[0124] At least a part of the conductive layer 503 can function as one of the source electrode or the drain electrode of the transistor of the pixel adjacent to the transistor Tr.

[0125] The conductive layer 501, the conductive layer 502, and the conductive layer 503 are preferably formed in the same process.

[0126] That is, the conductive layer 501, the conductive layer 502, and the conductive layer 503 preferably have the same material. .

[0127] At least a part of the insulating layer 500 can function as an interlayer insulating film.

[0128] At least a part of the insulating layer 500 can function as a dielectric film of the capacitor element C. .

[0129] At least a part of the conductive layer 701 can function as one of the electrodes of the liquid crystal element LC. It is possible.

[0130] At least a part of the conductive layer 701 can function as one of the electrodes of the capacitor element C. By increasing the area of the conductive layer 701, it is possible to increase the capacitance value of the capacitor element C. For example, the conductive layer 701 may be enlarged to overlap with the conductive layer 212. Specifically, in the first direction 8001, the end of the conductive layer 701 may be provided so as to overlap with the conductive layer 212. Also, when having the conductive layers 526 and 527 as shown in FIG. 11 to be described later, the conductive layer 701 may be provided so as to overlap with the conductive layers 526 and 527.

[0131] At least a part of the liquid crystal layer 800 can function as the liquid crystal layer of the liquid crystal element LC. It is possible.

[0132] At least a part of the conductive layer 900 can function as the other electrode of the liquid crystal element LC. It is possible.

[0133] At least a part of the conductive layer 900 can function as the wiring L3.

[0134] By using the conductive layers 211, 212, 213, etc. as a part of the wiring L2, a part of the wiring L2 (the conductive layers 211, 212, 213, etc.) and a part of the wiring L4 ( the oxide semiconductor layer 310) can be overlapped.

[0135] By overlapping a part of the wiring L2 (the conductive layers 211, 212, 213, etc.) and a part of the wiring L4 (the oxide semiconductor layer 310), the wiring L4 (the oxide semiconductor layer 310) can be overlapped with one of the electrodes (pixel electrodes) of the liquid crystal elements LC of all the pixels.

[0136] That is, the wiring L4 can be made a wiring common to all pixels.

[0137] The wiring common to all pixels has a function of supplying a predetermined electrical state to all pixels. function.

[0138] It can be said that the oxide semiconductor layer 310 has a lattice shape.

[0139] The oxide semiconductor layer 310 has a plurality of openings, and it can be said that the transistors of each pixel are arranged in the plurality of openings respectively. transistors are arranged.

[0140] It can be said that the oxide semiconductor layer 310 has a plurality of first regions extending along the first direction 8001 and a plurality of second regions connecting the plurality of first regions to each other. plurality of second regions connecting the plurality of first regions to each other.

[0141] It can be said that the oxide semiconductor layer 310 has a plurality of first regions extending along the second direction 8002 and a plurality of second regions connecting the plurality of first regions to each other. plurality of second regions connecting the plurality of first regions to each other.

[0142] As described above, by using a wiring in the same layer as the gate electrode of the transistor as a part of the wiring L2, a part of the wiring L2 can be overlapped with a part of the wiring L4. a part of the wiring L2 can be overlapped with a part of the wiring L4.

[0143] Since a part of the wiring L2 and a part of the wiring L4 can be overlapped, a part of the wiring L2 and a part of the wiring L4 can be crossed.

[0144] By crossing a part of the wiring L2 and a part of the wiring L4, the wiring L4 can be made a wiring common to all pixels. a wiring common to all pixels.

[0145] At least a part of the configuration described in this embodiment can be implemented in appropriate combination with at least a part of the configuration described in other embodiments. This can be implemented in appropriate combination with at least a part of the configuration described in other embodiments.

[0146] (Embodiment 2) An example of a liquid crystal display device (a type of semiconductor device) driven by FFS (Fringe Field Switching) will be described. This is an example of a liquid crystal display device (a type of semiconductor device) driven by FFS (Fringe Field Switching).

[0147] 5 to 6 are examples in which an opening is provided in one electrode (pixel electrode (for example, conductive layer 701)) of the liquid crystal element LC in FIGS. 1 to 3.

[0148] In FIGS. 5 to 6, at least a part of the oxide semiconductor layer 310 can function as the other electrode of the liquid crystal element LC. This can function as the other electrode of the liquid crystal element LC.

[0149] Since at least a part of the oxide semiconductor layer 310 can function as the other electrode of the liquid crystal element LC, the conductive layer 900 becomes unnecessary.

[0150] The conductive layer 900 may be provided in FIGS. 5 and 6.

[0151] When the conductive layer 900 is provided in FIGS. 5 and 6, the conductive layer 900 can be used for applications other than the other electrode of the liquid crystal element LC. This can be used for applications other than the other electrode of the liquid crystal element LC.

[0152] Examples of applications other than the other electrode of the liquid crystal element LC include, but are not limited to, applications as an electric field shielding film, applications as an electrode of a touch panel, etc. This can be used for applications other than the other electrode of the liquid crystal element LC, such as applications as an electric field shielding film, applications as an electrode of a touch panel, etc.

[0153] The electric field shielding film has a function of preventing the influence of an external electric field on the liquid crystal element. This can prevent the influence of an external electric field on the liquid crystal element.

[0154] FIG. 7 shows an example of a pixel circuit corresponding to FIGS. 5 to 6 of the liquid crystal display device.

[0155] The wiring L1 is electrically connected to the gate of the transistor Tr.

[0156] The wiring L2 is electrically connected to one of the source or drain of the transistor Tr .

[0157] The other of the source or drain of the transistor Tr is electrically connected to one electrode of the liquid crystal element LC.

[0158] The other of the source or drain of the transistor Tr is electrically connected to one electrode of the capacitor element C.

[0159] The wiring L3 is electrically connected to the other electrode of the liquid crystal element LC.

[0160] The wiring L3 is electrically connected to the other electrode of the capacitor element C.

[0161] The wirings L1, L2, and L3 have a function of transmitting signals, voltages, or currents .

[0162] The wirings L1, L2, and L3 have a function of being able to reach a predetermined potential.

[0163] By changing or fixing the electrical state (signal, voltage, current, or potential) of the wiring L1, the on and off of the transistor Tr can be controlled.

[0164] The wiring L1 is called a gate wiring, a scanning line, etc.

[0165] By changing or fixing the electrical state (signal, voltage, current, or potential) of the wiring L2, the driving of the liquid crystal element LC can be controlled.

[0166] By changing or fixing the electrical state (signal, voltage, current, or potential) of wiring L2, it is possible to accumulate charge in the capacitive element C.

[0167] Wiring L2 is called a source wiring, a drain wiring, a signal line, or the like.

[0168] By changing or fixing the electrical state (signal, voltage, current, or potential) of wiring L3, it is possible to control the driving of the liquid crystal element LC.

[0169] By changing or fixing the electrical state (signal, voltage, current, or potential) of wiring L3, it is possible to accumulate charge in the capacitive element C.

[0170] Wiring L3 is called a common wiring, a common electrode, or the like.

[0171] Wiring L3 can be said to be a wiring having a first function as a capacitive wiring and a second function as a common wiring, a common electrode, or the like.

[0172] With the above configuration, a liquid crystal display device with FFS driving can be provided.

[0173] At least a part of the configuration described in this embodiment can be implemented in appropriate combination with at least a part of the configuration described in other embodiments.

[0174] (Embodiment 3) The resistance value of the oxide semiconductor layer 310 may be high.

[0175] Therefore, it is preferable to provide a conductive layer that can function as an auxiliary wiring.

[0176] For example, FIG. 8 shows an example in which conductive layers 521, 522, etc. are added to FIGS. 1 to 4. .

[0177] For example, FIG. 9 shows an example in which conductive layers 523, 524, etc. are added to FIGS. 1 to 4. .

[0178] For example, FIG. 10 shows an example in which a conductive layer 525, etc. is added to FIGS. 1 to 4.

[0179] For example, FIG. 11 shows an example in which conductive layers 526, 527, 528, conductive layer 529, etc. are added to FIGS. 1 to 4.

[0180] In FIGS. 8 to 11, the conductive layer 203 is a conductive layer formed in the same process as the conductive layer 201. That is.

[0181] That is, the conductive layer 203 has the same material as the conductive layer 201.

[0182] In FIGS. 8 to 11, the conductive layer 214 is a conductive layer formed in the same process as the conductive layer 201. That is.

[0183] That is, the conductive layer 214 has the same material as the conductive layer 201.

[0184] Conductive layers (such as conductive layers 521 to 529) that can function as auxiliary wirings in FIGS. 1 to 4 are shown, but conductive layers (such as conductive layers 521 to 529) that can function as auxiliary wirings may be provided in FIGS. 5 to 7. That is.

[0185] Conductive layers (such as conductive layers 521 to 529) that can function as auxiliary wirings can be formed in the same process as the conductive layer 501.

[0186] That is, the conductive layers (such as conductive layers 521 to 529) that can function as auxiliary wirings can be formed using the same material as the conductive layer 501.

[0187] The conductive layers (such as conductive layers 521 to 529) that can function as auxiliary wirings have regions in contact with the oxide semiconductor layer 310.

[0188] For example, in FIG. 8, the conductive layer 521 and the conductive layer 522 are continuously provided along the first direction 8001.

[0189] For example, in FIG. 9, the conductive layer 523 and the conductive layer 524 are continuously provided along the second direction 8002.

[0190] For example, in FIG. 10, the conductive layer 525 is continuously provided along the first direction 8001, and the conductive layer 525 is continuously provided along the second direction 8002.

[0191] In FIG. 10, it can be said that a grid-like conductive layer 525 is provided.

[0192] In FIG. 10, it can be said that a conductive layer 525 having a plurality of openings is provided.

[0193] In FIG. 10, it can be said that a plurality of pixels (such as transistors, pixel electrodes, etc.) are provided inside each of the plurality of openings of the conductive layer 525.

[0194] For example, in FIG. 11, the conductive layer 528 and the conductive layer 529 are intermittently provided along the first direction 8001.

[0195] For example, in FIG. 11, the conductive layer 526 and the conductive layer 527 are intermittently provided along the second direction 8002. ​​​​​​​are intermittently provided.

[0196] For example, in the case of the circuit of FIG. 4, at least a part of the conductive layer (conductive layer 52 1 to conductive layer 529, etc.) that can function as auxiliary wiring can function as wiring L4.

[0197] For example, in the case of the circuit of FIG. 7, at least a part of the conductive layer (conductive layer 52 1 to conductive layer 529, etc.) that can function as auxiliary wiring can function as wiring L3.

[0198] That is, by having the conductive layer (conductive layer 521 to conductive layer 529, etc.) that can function as auxiliary wiring the resistance value of wiring L3 or wiring L4 can be reduced.

[0199] Conductive layer 521 has a region overlapping with conductive layer 211.

[0200] Conductive layer 521 has a region intersecting with conductive layer 211.

[0201] Conductive layer 522 has a region overlapping with conductive layer 212.

[0202] Conductive layer 522 has a region intersecting with conductive layer 212.

[0203] Conductive layer 522 has a region overlapping with conductive layer 214.

[0204] Conductive layer 522 has a region intersecting with conductive layer 214.

[0205] Conductive layer 523 has a region overlapping with conductive layer 201.

[0206] Conductive layer 523 has a region intersecting with conductive layer 201.

[0207] Conductive layer 523 has a region overlapping with conductive layer 203.

[0208] The conductive layer 523 has an area where it intersects with the conductive layer 203 .

[0209] The conductive layer 524 has an area overlapping with the conductive layer 201 .

[0210] The conductive layer 524 has an area where it intersects with the conductive layer 201 .

[0211] The conductive layer 524 has a region overlapping with the conductive layer 203 .

[0212] The conductive layer 524 has an area where it intersects with the conductive layer 203 .

[0213] The conductive layer 525 has an area overlapping with the conductive layer 201 .

[0214] The conductive layer 525 has an area where it intersects with the conductive layer 201 .

[0215] The conductive layer 525 has an overlapping region with the conductive layer 203 .

[0216] Conductive layer 525 has an area where it intersects with conductive layer 203 .

[0217] The conductive layer 525 has an area overlapping with the conductive layer 211 .

[0218] The conductive layer 525 has an area where it intersects with the conductive layer 211 .

[0219] The conductive layer 525 has an area that overlaps with the conductive layer 212 .

[0220] Conductive layer 525 has an area where it intersects with conductive layer 212 .

[0221] The conductive layer 525 has an area that overlaps with the conductive layer 214 .

[0222] Conductive layer 525 has an area where it intersects with conductive layer 214 .

[0223] The conductive layer 526 has a region overlapping with the conductive layer 212.

[0224] The conductive layer 526 has a region intersecting with the conductive layer 212.

[0225] The conductive layer 527 has a region overlapping with the conductive layer 214.

[0226] The conductive layer 527 has a region intersecting with the conductive layer 214.

[0227] The conductive layer 528 has a region overlapping with the conductive layer 201.

[0228] The conductive layer 528 has a region intersecting with the conductive layer 201.

[0229] The conductive layer 529 has a region overlapping with the conductive layer 203.

[0230] The conductive layer 529 has a region intersecting with the conductive layer 203.

[0231] As described above, a conductive layer that can function as an auxiliary wiring intersects with a conductive layer formed in the same process as the gate electrode of the transistor, so that a conductive layer that can function as an auxiliary wiring can be provided across a plurality of pixels. By intersecting with a conductive layer formed in the same process as the gate electrode of the transistor, a conductive layer that can function as an auxiliary wiring can be provided across a plurality of pixels. As described above, a conductive layer that can function as an auxiliary wiring intersects with a conductive layer formed in the same process as the gate electrode of the transistor, so that a conductive layer that can function as an auxiliary wiring can be provided across a plurality of pixels.

[0232] Providing intermittently a conductive layer that can function as an auxiliary wiring as shown in FIG. 11 is preferable from the viewpoint of increasing the aperture ratio of the pixel. From the viewpoint of increasing the aperture ratio of the pixel, it is preferable.

[0233] For example, the conductive layer 526 has a first region overlapping with the conductive layer 212, a second region not overlapping with the conductive layer 212, and a third region not overlapping with the conductive layer 212. For example, the conductive layer 526 has a first region overlapping with the conductive layer 212, a second region not overlapping with the conductive layer 212, and a third region not overlapping with the conductive layer 212.

[0234] For example, the conductive layer 527 has a first region overlapping with the conductive layer 214, a second region not overlapping with the conductive layer 214, and a third region not overlapping with the conductive layer 214. It has a second region that does not overlap and a third region that does not overlap with the conductive layer 214.

[0235] For example, the conductive layer 528 has a first region that overlaps with the conductive layer 201, a second region that does not overlap with the conductive layer 201, and a third region that does not overlap with the conductive layer 201. It has a second region that does not overlap and a third region that does not overlap with the conductive layer 201.

[0236] For example, the conductive layer 529 has a first region that overlaps with the conductive layer 203, a second region that does not overlap with the conductive layer 203, and a third region that does not overlap with the conductive layer 203. It has a second region that does not overlap and a third region that does not overlap with the conductive layer 203.

[0237] One of the second region or the third region is arranged in one of two adjacent pixels, and the other of the second region or the third region is arranged in the other of the two adjacent pixels. It is arranged in the other of the two adjacent pixels.

[0238] The first region is arranged between the second region and the third region.

[0239] From the viewpoint of increasing the aperture ratio of the pixel, it is preferable that the areas of the second region and the third region are small. It is preferably small.

[0240] For example, if the area of the second region is made smaller than the area of the first region, it is preferable because the aperture ratio of the pixel can be increased. It is possible to increase it, so it is preferable.

[0241] For example, if the area of the third region is made smaller than the area of the first region, it is preferable because the aperture ratio of the pixel can be increased. It is possible to increase it, so it is preferable.

[0242] For example, if the sum of the area of the second region and the area of the third region is made smaller than the area of the first region, it is preferable because the aperture ratio of the pixel can be significantly increased. It is possible to increase it considerably, so it is preferable.

[0243] For example, it is also possible to set one of the area of the second region or the area of the third region to 0.

[0244] For example, both the area of the second region and the area of the third region may be set to 0.

[0245] When both the area of the second region and the area of the third region are set to 0, the entire conductive layer that can function as auxiliary wiring overlaps with the lower conductive layer. It becomes a configuration in which the entire conductive layer that can function as auxiliary wiring overlaps with the lower conductive layer.

[0246] When the entire conductive layer that can function as auxiliary wiring is overlapped with the lower conductive layer, the aperture ratio of the pixel can be maximized, which is preferable. It is preferable because the aperture ratio of the pixel can be maximized.

[0247] For example, the entire conductive layer 526 may be overlapped with the conductive layer 212.

[0248] For example, the entire conductive layer 527 may be overlapped with the conductive layer 214.

[0249] For example, the entire conductive layer 528 may be overlapped with the conductive layer 201.

[0250] For example, the entire conductive layer 529 may be overlapped with the conductive layer 203.

[0251] At least a part of the configuration described in this embodiment can be implemented in appropriate combination with at least a part of the configuration described in other embodiments. It can be implemented in appropriate combination with at least a part of the configuration described in other embodiments.

[0252] (Embodiment 4) In other embodiments, an example in which the oxide semiconductor layer 310 is provided so as to span all pixels is shown. .

[0253] For example, as shown in FIG. 12, the oxide semiconductor layer 310 may be provided so as to span a plurality of pixels arranged along the first direction 8001. It may be provided so as to span a plurality of pixels arranged along the first direction 8001.

[0254] For example, as shown in FIG. 13, the oxide semiconductor layer 310 may be arranged along the second direction 8002. It may be provided so as to straddle a plurality of pixels that have been formed.

[0255] A plurality of pixels arranged along the first direction 8001 are defined as "rows".

[0256] A plurality of pixels arranged along the second direction 8002 are defined as "columns".

[0257] In FIG. 12, an oxide semiconductor layer is provided for each row.

[0258] In FIG. 13, an oxide semiconductor layer is provided for each column.

[0259] In FIG. 12, it is preferable to overlap a conductive layer (such as conductive layer 201) corresponding to wiring L1 with an oxide semiconductor layer (such as oxide semiconductor layer 310) corresponding to wiring L3 or wiring L4.

[0260] In FIG. 12, in a partial region of the oxide semiconductor layer (such as oxide semiconductor layer 3 10 etc.) corresponding to wiring L3 or wiring L4, the length in the second direction 8002 can be increased, so the resistance value of wiring L3 or wiring L4 can be lowered.

[0261] A partial region of the oxide semiconductor layer (such as oxide semiconductor layer 310 etc.) corresponding to wiring L3 or wiring L4 is, for example, the region surrounded by the dotted line in FIG. 12.

[0262] In FIG. 12, the oxide semiconductor layer corresponding to wiring L3 or wiring L4 is made to overlap both of two adjacent wiring L1s, but it may also be overlapped with only one of the two adjacent wiring L1s.

[0263] Even if the oxide semiconductor layer corresponding to wiring L3 or wiring L4 is overlapped with only one of the two adjacent wiring L1s, the resistance value of wiring L3 or wiring L4 can be lowered.

[0264] ​​​ In FIG. 13, it is preferable to overlap a conductive layer (such as conductive layer 212) corresponding to wiring L2 with an oxide semiconductor layer (such as oxide semiconductor layer 310) corresponding to wiring L3 or wiring L4.

[0265] In FIG. 13, in a partial region of the oxide semiconductor layer (such as oxide semiconductor layer 3 10) corresponding to wiring L3 or wiring L4, the length in the first direction 8001 can be increased, so the resistance value of wiring L3 or wiring L4 can be lowered.

[0266] A partial region of the oxide semiconductor layer (such as oxide semiconductor layer 310) corresponding to wiring L3 or wiring L4 is, for example, the region surrounded by the dotted line in FIG. 13.

[0267] In FIG. 13, the oxide semiconductor layer corresponding to wiring L3 or wiring L4 is made to overlap both of two adjacent wiring L2s, but it may also be overlapped with only one of the two adjacent wiring L2s.

[0268] Even if the oxide semiconductor layer corresponding to wiring L3 or wiring L4 is overlapped with only one of the two adjacent wiring L2s, the resistance value of wiring L3 or wiring L4 can be lowered.

[0269] In FIGS. 12 and 13, a conductive layer (such as conductive layers 521 to 529) that can function as auxiliary wiring may be provided.

[0270] At least a part of the configuration described in this embodiment can be implemented in appropriate combination with at least a part of the configuration described in other embodiments.

[0271] (Embodiment 5) The resistance value of the oxide semiconductor layer (such as oxide semiconductor layer 310) corresponding to wiring L3 or wiring L4 To lower it, it is preferable to contain an alkali metal, an alkaline earth metal, hydrogen, etc. in the oxide semiconductor layer corresponding to the wiring L3 or the wiring L4. It is preferable to contain an alkaline earth metal and hydrogen.

[0272] For example, it is preferable to add a substance selectively containing an alkali metal, a substance containing an alkaline earth metal, a substance containing hydrogen, etc. to the oxide semiconductor layer corresponding to the wiring L3 or the wiring L4. It is preferable to add a substance containing an alkaline earth metal and a substance containing hydrogen. It is preferable.

[0273] When an alkali metal, an alkaline earth metal, hydrogen, etc. are contained in the oxide semiconductor layer serving as the active layer of the transistor Tr, it has an adverse effect on the electrical characteristics of the transistor Tr. It has an adverse effect on the electrical characteristics of the transistor Tr.

[0274] It is preferable to prevent substances containing an alkali metal, substances containing an alkaline earth metal, substances containing hydrogen, etc. from being added to the oxide semiconductor layer serving as the active layer of the transistor Tr as much as possible. It is preferable to prevent substances containing an alkali metal, substances containing an alkaline earth metal, substances containing hydrogen, etc. from being added to the oxide semiconductor layer serving as the active layer of the transistor Tr as much as possible. It is preferable.

[0275] It is preferable to thoroughly remove an alkali metal, an alkaline earth metal, hydrogen, etc. from the oxide semiconductor layer serving as the active layer of the transistor Tr. It is preferable to thoroughly remove an alkali metal, an alkaline earth metal, hydrogen, etc. from the oxide semiconductor layer serving as the active layer of the transistor Tr.

[0276] For example, in a state where the oxide semiconductor layer serving as the active layer of the transistor Tr is covered with a mask, a substance containing an alkali metal, a substance containing an alkaline earth metal, a substance containing hydrogen, etc. can be added by ion doping method, ion implantation method, etc. For example, in a state where the oxide semiconductor layer serving as the active layer of the transistor Tr is covered with a mask, a substance containing an alkali metal, a substance containing an alkaline earth metal, a substance containing hydrogen, etc. can be added by ion doping method, ion implantation method, etc. It is possible to add a substance containing an alkali metal, a substance containing an alkaline earth metal, a substance containing hydrogen, etc.

[0277] When adding a substance containing an alkali metal, the alkali metal concentration in the oxide semiconductor layer corresponding to the wiring L3 or the wiring L4 becomes higher than the alkali metal concentration in the oxide semiconductor layer serving as the active layer of the transistor Tr. When adding a substance containing an alkali metal, the alkali metal concentration in the oxide semiconductor layer corresponding to the wiring L3 or the wiring L4 becomes higher than the alkali metal concentration in the oxide semiconductor layer serving as the active layer of the transistor Tr. It becomes higher than the alkali metal concentration in the oxide semiconductor layer serving as the active layer of the transistor Tr.

[0278] When adding a substance containing an alkaline earth metal, it corresponds to wiring L3 or wiring L4 the alkaline earth metal concentration in the oxide semiconductor layer becomes higher than the alkaline earth metal concentration in the oxide semiconductor layer that becomes the active layer of the transistor Tr

[0279] When adding a substance containing hydrogen, the hydrogen concentration in the oxide semiconductor layer corresponding to wiring L3 or wiring L4 becomes higher than the hydrogen concentration in the oxide semiconductor layer that becomes the active layer of the transistor Tr

[0280] Two or more substances containing an alkali metal may be added.

[0281] Two or more substances containing an alkaline earth metal may be added.

[0282] Two or more substances containing hydrogen may be added.

[0283] One or more "substances containing an alkali metal" and one or more "substances containing an alkaline earth metal" may be added.

[0284] One or more "substances containing an alkali metal" and one or more "substances containing hydrogen" may be added.

[0285] One or more "substances containing an alkaline earth metal" and one or more "substances containing hydrogen" may be added.

[0286] One or more "substances containing an alkali metal", one or more "substances containing an alkaline earth metal", and one or more "substances containing hydrogen" may be added.

[0287] Substances containing an alkali metal include alkali metals, alkali metal compounds, etc. ​​​​

[0288] Examples of alkali metals include Li (lithium), Na (sodium), K (potassium), Rb (rubidium), Cs (cesium), Fr (francium), and the like.

[0289] Examples of alkali metal compounds include oxides of alkali metals, nitrides of alkali metals, fluorides of alkali metals, chlorides of alkali metals, and the like.

[0290] Substances containing alkaline earth metals include alkaline earth metals, alkaline earth metal compounds, and the like.

[0291] Examples of alkaline earth metals include Be (beryllium), Mg (magnesium), Ca (calcium), Sr (strontium), Ba (barium), Ra (radium), and the like. There are also.

[0292] Examples of alkaline earth metal compounds include oxides of alkaline earth metals, nitrides of alkaline earth metals, fluorides of alkaline earth metals, chlorides of alkaline earth metals, and the like.

[0293] Examples of substances containing hydrogen include H (hydrogen), H2O (water), SiH4 (silane), PH3 (phosphine), B2H6 (diborane), and the like.

[0294] The concentrations of alkali metals, alkaline earth metals, hydrogen, etc. can be measured, for example, by SIMS (secondary ion mass spectrometry), RBS (Rutherford backscattering spectroscopy), etc., but the analysis methods for each concentration are not limited to these.

[0295] At least a part of the configuration described in this embodiment can be implemented in appropriate combination with at least a part of the configuration described in other embodiments.

[0296] (Embodiment 6) Figures 14 to 18 are an example of a structure for incorporating an alkali metal, an alkaline earth metal, hydrogen, etc. into the oxide semiconductor layer 310.

[0297] Figure 14 is an example in which an opening is provided in the insulating layer 300 or the insulating layer 500 in FIG. 1.

[0298] The region surrounded by the broken line in FIG. 14 corresponds to the opening.

[0299] In FIG. 14, the oxide semiconductor layer 310 has a region overlapping with the opening.

[0300] In FIG. 14, the conductive layer 701 has a region overlapping with the opening.

[0301] Figure 15 is an example of a cross-sectional view of the A - B cross-section of FIG. 14.

[0302] Figure 15 is an example in which an opening is provided in the insulating layer 300.

[0303] Figure 16 is an example of a cross-sectional view of the A - B cross-section of FIG. 14.

[0304] Figure 16 is an example in which an opening is provided in the insulating layer 300.

[0305] In FIG. 16, an insulating layer 150 is provided between the substrate 101 and the conductive layer 201.

[0306] In FIG. 16, at least a part of the insulating layer 150 can function as an underlayer film.

[0307] Figure 17 is an example of a cross-sectional view of the A - B cross-section of FIG. 14.

[0308] Figure 17 is an example in which an opening is provided in the insulating layer 300.

[0309] ​​In FIG. 17, an insulating layer 150 is provided between the conductive layer 201 and the insulating layer 300.

[0310] In FIG. 17, at least a part of the insulating layer 150 can function as a gate insulating film of a transistor. and can function as a gate insulating film of a transistor.

[0311] FIG. 18 is an example of a cross-sectional view of the A - B cross-section of FIG. 14.

[0312] FIG. 18 is an example in which an opening is provided in the insulating layer 500.

[0313] In FIG. 18, an insulating layer 150 is provided between the insulating layer 500 and the conductive layer 701.

[0314] In FIG. 18, at least a part of the insulating layer 150 can function as an interlayer insulating film. and can function as an interlayer insulating film.

[0315] In FIG. 15, the substrate 101 is a glass substrate containing, for example, Na (sodium). .

[0316] It is known that a large amount of Na (sodium) is contained in an inexpensive glass substrate.

[0317] In FIG. 15, the oxide semiconductor layer 310 has a region in contact with the substrate 101.

[0318] When the oxide semiconductor layer 310 is in contact with the substrate 101, Na (sodium) diffuses from the substrate 101 into the oxide semiconductor layer 310. and diffuses into the oxide semiconductor layer 310.

[0319] When Na (sodium) diffuses from the substrate 101 into the oxide semiconductor layer 310, carriers are generated in the oxide semiconductor layer 310, so that the resistance of the oxide semiconductor layer 310 can be lowered. and can lower the resistance of the oxide semiconductor layer 310.

[0320] In the vicinity of the interface between the oxide semiconductor layer 310 and the substrate 101 (the lower layer of the oxide semiconductor layer 310), the N concentration of a (sodium) becomes particularly high.

[0321] That is, the sodium concentration in a predetermined region of the oxide semiconductor layer 310 becomes higher than the sodium concentration in a predetermined region of the oxide semiconductor layer 30 1.

[0322] In FIGS. 16 to 18, the insulating layer 150 contains a substance containing an alkali metal, an alkaline earth substance containing a metalloid, or a substance containing hydrogen.

[0323] The insulating layer 150 may contain two or more substances containing an alkali metal.

[0324] The insulating layer 150 may contain two or more substances containing an alkaline earth metal.

[0325] The insulating layer 150 may contain two or more substances containing hydrogen.

[0326] The insulating layer 150 may contain one or more "substances containing an alkali metal" and one or more "al kaline earth metal-containing substances".

[0327] The insulating layer 150 may contain one or more "substances containing an alkali metal" and one or more "hydrogen containing substances".

[0328] The insulating layer 150 may contain one or more "substances containing an alkaline earth metal" and one or more " substances containing hydrogen".

[0329] The insulating layer 150 may contain one or more "substances containing an alkali metal" and one or more "al It contains a "potassium earth metal-containing substance" and one or more "hydrogen-containing substances" is also good.

[0330] For example, when forming a film using plasma CVD, the deposition gas contains alkali metals. containing a substance having an alkali metal, an alkaline earth metal, or a hydrogen-containing substance. The insulating layer 150 can be formed by this.

[0331] For example, when forming a film using a sputtering method, In the sputtering gas, there is a substance containing an alkali metal, a substance containing an alkaline earth metal, The insulating layer 150 may be formed by including a material or a material containing hydrogen. can.

[0332] For example, since a resin film contains a large amount of H2O, the insulating layer 150 can be made of a resin film. can.

[0333] The resin film contains a substance containing an alkali metal or a substance containing an alkaline earth metal. and is highly effective.

[0334] 16 to 18, the oxide semiconductor layer 310 has a region in contact with the insulating layer 150. do.

[0335] The oxide semiconductor layer 310 comes into contact with the insulating layer 150, and thus the aluminum Potassium metal-containing substances, alkaline earth metal-containing substances, or hydrogen-containing substances The oxide semiconductor layer 310 is diffused.

[0336] From the insulating layer 150, a substance containing an alkali metal, a substance containing an alkaline earth metal, Alternatively, when a substance containing hydrogen diffuses into the oxide semiconductor layer 310, carriers are generated in the oxide semiconductor layer 310, so that the resistance of the oxide semiconductor layer 310 can be lowered. .

[0337] The alkali metal concentration, alkaline earth metal concentration, or hydrogen concentration in the vicinity of the interface between the oxide semiconductor layer 310 and the insulating layer 150 (the lower layer or upper layer of the oxide semiconductor layer 310) becomes particularly high.

[0338] That is, the alkali metal concentration in a predetermined region of the oxide semiconductor layer 310 becomes higher than the alkali metal concentration in a predetermined region of the oxide semiconductor layer 301.

[0339] Alternatively, the alkaline earth metal concentration in a predetermined region of the oxide semiconductor layer 310 becomes higher than the alkaline earth metal concentration in a predetermined region of the oxide semiconductor layer 301.

[0340] Alternatively, the hydrogen concentration in a predetermined region of the oxide semiconductor layer 310 becomes higher than the hydrogen concentration in a predetermined region of the oxide semiconductor layer 301.

[0341] In FIGS. 15 to 18, the insulating layer 300 and the insulating layer 500 each have a region in contact with the oxide semiconductor layer 301.

[0342] Since the oxide semiconductor layer 301 is the active layer of the transistor Tr, it is preferable to prevent the intrusion of substances containing alkali metals, substances containing alkaline earth metals, substances containing hydrogen, and the like. .

[0343] That is, it is preferable that the alkali metal concentration, alkaline earth metal concentration, and hydrogen concentration in the insulating layer 300 and the insulating layer 500 are low.

[0344] For example, it is preferable that the sodium concentration in the insulating layer 300 is lower than the sodium concentration in the substrate 101. This is preferable.

[0345] For example, it is preferable that the sodium concentration in the insulating layer 500 is lower than the sodium concentration in the substrate 101. This is preferable.

[0346] For example, it is preferable that the alkali metal concentration in the insulating layer 300 is lower than the alkali metal concentration in the insulating layer 150. This is preferable.

[0347] For example, it is preferable that the alkali metal concentration in the insulating layer 500 is lower than the alkali metal concentration in the insulating layer 150. This is preferable.

[0348] For example, it is preferable that the alkaline earth metal concentration in the insulating layer 300 is lower than the alkaline earth metal concentration in the insulating layer 150. This is preferable.

[0349] For example, it is preferable that the alkaline earth metal concentration in the insulating layer 500 is lower than the alkaline earth metal concentration in the insulating layer 150. This is preferable.

[0350] For example, it is preferable that the hydrogen concentration in the insulating layer 300 is lower than the hydrogen concentration in the insulating layer 150. This is preferable.

[0351] For example, it is preferable that the hydrogen concentration in the insulating layer 500 is lower than the hydrogen concentration in the insulating layer 150. This is preferable.

[0352] In order to reduce the oxygen deficiency in the oxide semiconductor layer 301, it is preferable that the insulating layer 300 or the insulating layer 500 contains oxygen. This is preferable.

[0353] For example, it is preferable that the oxygen concentration in the insulating layer 300 is higher than the oxygen concentration in the insulating layer 150. This is preferable.

[0354] For example, it is preferable that the oxygen concentration in the insulating layer 500 is higher than the oxygen concentration in the insulating layer 150. This is more preferable.

[0355] The configuration of FIG. 18 may be combined with any of the configurations of FIGS. 15 to 17.

[0356] For example, by adopting a structure in which the oxide semiconductor layer 310 is sandwiched between a pair of insulating layers 150, the resistance value of the oxide semiconductor layer 310 can be significantly reduced.

[0357] At least a part of the configuration described in this embodiment can be implemented in appropriate combination with at least a part of the configuration described in other embodiments. This can be implemented by appropriately combining at least a part of the configuration described in this embodiment with at least a part of the configuration described in other embodiments.

[0358] (Embodiment 7) In the cases of FIGS. 15 and 16, when the opening of the insulating layer 300 is overlapped with the conductive layer 201, the conductive layer 211, the conductive layer 212, the conductive layer 213, etc., the conductive layers will short-circuit.

[0359] On the other hand, in the case of FIG. 17, even when the opening of the insulating layer 300 is overlapped with the conductive layer 201, the conductive layer 211, the conductive layer 212, the conductive layer 213, etc., the conductive layers do not short-circuit.

[0360] In the case of FIG. 18, even when the opening of the insulating layer 500 is overlapped with the conductive layer 201, the conductive layer 211, the conductive layer 212, the conductive layer 213, etc., the conductive layers do not short-circuit.

[0361] For example, in the case of FIG. 17, the shape of the opening of the insulating layer 300 can be made as shown in FIGS. 19 to 21. This can be done.

[0362] For example, in the case of FIG. 18, the shape of the opening of the insulating layer 500 can be made as shown in FIGS. 19 to 21. This can be done.

[0363] FIG. 19 shows an example in which the shape of the opening extends across a plurality of pixels arranged along the first direction 8001. That is the example of the shape.

[0364] In FIG. 19, the opening has a region overlapping with the conductive layer 212 or the like.

[0365] In FIG. 19, the opening has a region intersecting with the conductive layer 212 or the like.

[0366] FIG. 20 shows an example in which the shape of the opening extends across a plurality of pixels arranged along the second direction 8002. That is the example of the shape.

[0367] In FIG. 20, the opening has a region overlapping with the conductive layer 201 or the like.

[0368] In FIG. 20, the opening has a region intersecting with the conductive layer 201 or the like.

[0369] FIG. 21 shows an example in which the shape of the opening extends across all the pixels.

[0370] In FIG. 21, the opening has a region overlapping with the conductive layer 201, the conductive layer 211, the conductive layer 212, the conductive layer 21 3 or the like.

[0371] In FIG. 21, the opening has a region intersecting with the conductive layer 201, the conductive layer 211, the conductive layer 212, the conductive layer 21 3 or the like.

[0372] By adopting the structure as shown in FIGS. 19 to 21, the contact area between the insulating layer 150 and the oxide semiconductor layer 31 0 can be increased.

[0373] By increasing the contact area between the insulating layer 150 and the oxide semiconductor layer 310, the resistance value of the oxide semi conductor layer 310 can be made lower.

[0374] An opening refers to a hole or a groove.

[0375] The shape of the hole is a closed shape.

[0376] The shape of the groove is an open shape.

[0377] The openings in FIGS. 19 to 21 can be either holes or grooves.

[0378] At least a part of the configuration described in this embodiment can be implemented in appropriate combination with at least a part of the configuration described in other embodiments.

[0379] (Embodiment 8) FIG. 22 shows an example in which a conductive layer 550 or the like is added to FIG. 15.

[0380] FIG. 23 shows an example in which a conductive layer 550 or the like is added to FIG. 16.

[0381] FIG. 24 shows an example in which a conductive layer 550 or the like is added to FIG. 17.

[0382] At least a part of the conductive layer 550 can function as auxiliary wiring.

[0383] A method for manufacturing the conductive layer 550 will be described.

[0384] The conductive layer 501, the conductive layer 502, etc. can be formed by forming a conductive film over the entire surface of the substrate and then etching the conductive film while a mask is placed at the positions where the conductive layer 501, the conductive layer 502, etc. are to be formed.

[0385] Here, usually, the etching time is adjusted so that no conductive layer remains at locations other than the positions where the conductive layer 501, the conductive layer 502, etc. are formed.

[0386] However, by deliberately shortening the etching time, the conductive layer 550 can be left at the end of the opening (the stepped portion).

[0387] That is, by utilizing the property that residues are likely to occur at the end of the opening (the stepped portion), the conductive layer 550 can be formed.

[0388] The conductive layer 550 may be referred to as a conductive sidewall.

[0389] In FIGS. 22 to 24, the oxide semiconductor layer 310 has a concave portion at a position overlapping the opening.

[0390] The conductive layer 550 has a region in contact with the side surface of the oxide semiconductor layer 310 inside the concave portion.

[0391] The conductive layer 550 has a region in contact with the upper surface of the oxide semiconductor layer 310 inside the concave portion.

[0392] At least a part of the configuration described in this embodiment can be implemented in appropriate combination with at least a part of the configuration described in other embodiments.

[0393] (Embodiment 9) FIG. 25 is an example showing at least a part of one pixel in FIG. 1.

[0394] FIG. 26 is an example showing at least a part of one pixel in FIG. 12.

[0395] FIG. 27 is an example showing at least a part of one pixel in FIG. 13.

[0396] In FIG. 25, the oxide semiconductor layer 310 has a region overlapping the conductive layer 212.

[0397] ​​​​​​In FIG. 25, the oxide semiconductor layer 310 has a region that intersects with the conductive layer 212. .

[0398] In FIG. 25, the oxide semiconductor layer 310 has a region overlapping with the conductive layer 201.

[0399] In FIG. 25, the oxide semiconductor layer 310 has a region that intersects with the conductive layer 201. .

[0400] In FIG. 26, the oxide semiconductor layer 310 has a region overlapping with the conductive layer 212.

[0401] In FIG. 26, the oxide semiconductor layer 310 has a region that intersects with the conductive layer 212. .

[0402] In FIG. 26, the oxide semiconductor layer 310 has a region overlapping with the conductive layer 201.

[0403] In FIG. 26, the oxide semiconductor layer 310 does not intersect with the conductive layer 201.

[0404] In FIG. 27, the oxide semiconductor layer 310 has a region overlapping with the conductive layer 212.

[0405] In FIG. 27, the oxide semiconductor layer 310 does not intersect with the conductive layer 212.

[0406] In FIG. 27, the oxide semiconductor layer 310 has a region overlapping with the conductive layer 201.

[0407] In FIG. 27, the oxide semiconductor layer 310 has a region that intersects with the conductive layer 201. .

[0408] By crossing the oxide semiconductor layer 310 with the conductive layer 212 or the conductive layer 201, multiple The oxide semiconductor layer 310 can be disposed so as to span several pixels.

[0409] By overlapping the oxide semiconductor layer 310 with the conductive layer 212 or the conductive layer 201, the area of the oxide semiconductor layer 310 can be increased, so that the resistance value of the oxide semiconductor layer 310 can be reduced.

[0410] At least a part of the configuration described in this embodiment can be implemented in appropriate combination with at least a part of the configuration described in other embodiments.

[0411] (Embodiment 10) FIG. 28 is an example showing at least a part of two pixels in FIG. 1.

[0412] FIG. 29 is an example showing at least a part of two pixels in FIG. 12.

[0413] The conductive layer 222 is preferably formed in the same process as the conductive layer 201.

[0414] The oxide semiconductor layer 302 is preferably formed in the same process as the oxide semiconductor layer 301 .

[0415] The conductive layer 511 is preferably formed in the same process as the conductive layer 501.

[0416] The conductive layer 512 is preferably formed in the same process as the conductive layer 501.

[0417] The conductive layer 711 is preferably formed in the same process as the conductive layer 701.

[0418] In FIGS. 28 and 29, the oxide semiconductor layer 310 has a region overlapping with the conductive layer 701 .

[0419] In FIGS. 28 and 29, the oxide semiconductor layer 310 has a region overlapping with the conductive layer 711 .

[0420] In FIGS. 28 and 29, the oxide semiconductor layer 310 has a region overlapping with the conductive layer 212 .

[0421] In FIGS. 28 and 29, the oxide semiconductor layer 310 has a region intersecting with the conductive layer 212 .

[0422] In FIGS. 28 and 29, the oxide semiconductor layer 310 has a region overlapping with the conductive layer 222 .

[0423] In FIGS. 28 and 29, the oxide semiconductor layer 310 has a region intersecting with the conductive layer 222 .

[0424] In FIGS. 28 and 29, the oxide semiconductor layer 310 has a region overlapping with the conductive layer 201 .

[0425] In FIG. 28, the oxide semiconductor layer 310 has a region intersecting with the conductive layer 201

[0426] In FIG. 29, the oxide semiconductor layer 310 does not intersect with the conductive layer 201

[0427] By adopting the configurations as shown in FIGS. 28 and 29, the oxide semiconductor layer 310 can be arranged so as to straddle a plurality of pixels .

[0428] By adopting the configurations as shown in FIGS. 28 and 29, the resistance value of the oxide semiconductor layer 310 can be reduced .

[0429] At least a part of the configuration described in this embodiment can be implemented in appropriate combination with at least a part of the configuration described in other embodiments .

[0430] (Embodiment 11) FIG. 30 is an example showing at least a part of two pixels in FIG. 1.

[0431] FIG. 31 is an example showing at least a part of two pixels in FIG. 13.

[0432] The conductive layer 202 is a conductive layer formed in the same process as the conductive layer 201.

[0433] The oxide semiconductor layer 303 is preferably formed in the same process as the oxide semiconductor layer 301 .

[0434] The conductive layer 513 is a conductive layer formed in the same process as the conductive layer 501.

[0435] The conductive layer 514 is a conductive layer formed in the same process as the conductive layer 501.

[0436] The conductive layer 712 is a conductive layer formed in the same process as the conductive layer 701.

[0437] In FIGS. 30 and 31, the oxide semiconductor layer 310 has a region overlapping with the conductive layer 701 and.

[0438] In FIGS. 30 and 31, the oxide semiconductor layer 310 has a region overlapping with the conductive layer 712 and.

[0439] In FIGS. 30 and 31, the oxide semiconductor layer 310 has a region overlapping with the conductive layer 201 and.

[0440] In FIGS. 30 and 31, the oxide semiconductor layer 310 has a region intersecting with the conductive layer 201 and.

[0441] In FIGS. 30 and 31, the oxide semiconductor layer 310 has a region overlapping with the conductive layer 202 and.

[0442] In FIGS. 30 and 31, the oxide semiconductor layer 310 has a region that intersects with the conductive layer 202. It has.

[0443] In FIGS. 30 and 31, the oxide semiconductor layer 310 has a region that overlaps with the conductive layer 211. It has.

[0444] In FIG. 30, the oxide semiconductor layer 310 has a region that intersects with the conductive layer 211.

[0445] In FIG. 31, the oxide semiconductor layer 310 does not intersect with the conductive layer 211.

[0446] In FIGS. 30 and 31, the oxide semiconductor layer 310 has a region that overlaps with the conductive layer 212. It has.

[0447] In FIG. 30, the oxide semiconductor layer 310 has a region that intersects with the conductive layer 212.

[0448] In FIG. 31, the oxide semiconductor layer 310 does not intersect with the conductive layer 212.

[0449] By adopting the configuration as shown in FIGS. 30 and 31, the oxide semiconductor layer 310 can be arranged so as to straddle a plurality of pixels. It can be arranged.

[0450] By adopting the configuration as shown in FIGS. 30 and 31, the resistance value of the oxide semiconductor layer 310 can be lowered.

[0451] The conductive layer (conductive layer 211, conductive layer 212, conductive layer 501, conductive layer 513, etc.) corresponding to the wiring L2 in FIG. 31 may be formed in the same process as the conductive layer 599 in FIG. 32.

[0452] The conductive layer 599 can be formed in the same process as the conductive layer 501, conductive layer 502, etc.

[0453] In the case of FIG. 32, when the oxide semiconductor layer 310 is overlapped with the conductive layer 599, the oxide semiconductor layer 31 0 and the conductive layer 599 will be short-circuited. Therefore, it is preferable that the oxide semiconductor layer 310 does not overlap with the conductive layer 599.

[0454] At least a part of the configuration described in this embodiment can be implemented in appropriate combination with at least a part of the configuration described in other embodiments.

[0455] (Embodiment 12) The materials of the substrate, the insulating layer, the conductive layer, and the oxide semiconductor layer will be described.

[0456] As the substrate, a glass substrate, a quartz substrate, a metal substrate, a semiconductor substrate, a resin substrate (plastic substrate ) etc. can be used, but are not limited thereto.

[0457] When the oxide semiconductor layer 310 is brought into contact with the substrate, a glass substrate containing sodium is preferable.

[0458] Since the resin substrate (plastic substrate) contains a large amount of H2O, when the oxide semiconductor layer 310 is brought into contact with the substrate, it is also preferable to use the resin substrate (plastic substrate).

[0459] When the oxide semiconductor layer 310 is brought into contact with the substrate, it is more preferable to use a resin substrate (plastic substrate) containing an alkali metal or an alkaline earth metal.

[0460] The substrate may have flexibility.

[0461] When the glass substrate is thinned, it becomes flexible.

[0462] The resin substrate has flexibility.

[0463] Any material can be used for the insulating layer as long as it has insulating properties.

[0464] The insulating layer may have a single-layer structure or a laminated structure.

[0465] Examples of the insulating layer include, but are not limited to, an insulating layer containing an inorganic substance, an insulating layer containing an organic substance, etc. but are not limited thereto.

[0466] Examples of the insulating layer containing an inorganic substance include, but are not limited to, a film containing silicon oxide (typically a silicon oxide film, a silicon oxide film containing nitrogen, etc.), a film containing silicon nitride (typically a silicon nitride film, a silicon nitride film containing oxygen, etc.), a film containing aluminum nitride (typically an aluminum nitride film, an aluminum nitride film containing oxygen, etc.), a film containing aluminum oxide (typically an aluminum oxide film, an aluminum oxide film containing nitrogen, etc.), a film containing hafnium oxide (typically a hafnium oxide film, etc.). Examples of the insulating layer containing an organic substance include, but are not limited to, a resin film. Examples of the resin film include, but are not limited to, a film containing polyimide (typically a polyimide film, etc.), a film containing acrylic (typically an acrylic film, etc.), a film containing siloxane (typically a siloxane film, etc.), a film containing epoxy (typically an epoxy film, etc.). It is preferable that the insulating layer that can function as a gate insulating film is an insulating layer containing an inorganic substance. Examples of the insulating layer containing an organic substance include, but are not limited to, a resin film. Examples of the resin film include, but are not limited to, a film containing polyimide (typically a polyimide film, etc.), a film containing acrylic (typically an acrylic film, etc.), a film containing siloxane (typically a siloxane film, etc.), a film containing epoxy (typically an epoxy film, etc.). but are not limited thereto.

[0467] Examples of the insulating layer containing an organic substance include, but are not limited to, a resin film.

[0468] Examples of the resin film include, but are not limited to, a film containing polyimide (typically a polyimide film, etc.), a film containing acrylic (typically an acrylic film, etc.), a film containing siloxane (typically a siloxane film, etc.), a film containing epoxy (typically an epoxy film, etc.). Examples of the insulating layer containing an organic substance include, but are not limited to, a resin film. Examples of the resin film include, but are not limited to, a film containing polyimide (typically a polyimide film, etc.), a film containing acrylic (typically an acrylic film, etc.), a film containing siloxane (typically a siloxane film, etc.), a film containing epoxy (typically an epoxy film, etc.). but are not limited thereto.

[0469] It is preferable that the insulating layer that can function as a gate insulating film is an insulating layer containing an inorganic substance. Therewith.

[0470] The conductive layer can be made of any material as long as it has conductivity.

[0471] The conductive layer may have a single-layer structure or a laminated structure.

[0472] Examples of the conductive layer include, but are not limited to, a film containing a metal (typically a metal film, an alloy film, etc.) and a film containing a transparent conductor (typically a transparent conductive film, etc.).

[0473] Examples of the metal include, but are not limited to, aluminum, titanium, molybdenum, tungsten, chromium, gold, silver, copper, alkali metals, alkaline earth metals, etc.

[0474] Examples of the transparent conductor include, but are not limited to, indium tin oxide, indium zinc oxide, etc. It is not limited.

[0475] The metal has light-shielding properties or reflectivity.

[0476] The transparent conductor has light-transmitting properties.

[0477] When the conductive layer, such as the conductive layer 701, which can function as an electrode of the display element, has light-transmitting properties, a transmissive display device can be manufactured.

[0478] For example, it is preferable to use a film containing a transparent conductor for the conductive layer 701.

[0479] When using a film containing a metal for the conductive layer 701, a reflective display device can be manufactured.

[0480] The oxide semiconductor layer can be made of any material as long as it has semiconductor characteristics. .

[0481] The oxide semiconductor layer may have a single-layer structure or a laminated structure.

[0482] A semiconductor layer other than the oxide semiconductor layer may be used.

[0483] Examples of the semiconductor layer other than the oxide semiconductor layer include, but are not limited to, a semiconductor layer containing silicon and an organic semiconductor layer. and so on.

[0484] Examples of the semiconductor layer containing silicon include, but are not limited to, a silicon film, a silicon germanium film, and a silicon carbide film. and so on.

[0485] The semiconductor layer other than the oxide semiconductor layer may have a single-layer structure or a stacked structure.

[0486] The oxide semiconductor layer is a film containing an oxide semiconductor material.

[0487] The oxide semiconductor layer is not limited as long as it is a film containing a metal and oxygen.

[0488] For example, a film containing indium and oxygen, a film containing zinc and oxygen, and a film containing tin and oxygen can function as an oxide semiconductor layer.

[0489] For example, examples of the oxide semiconductor layer include, but are not limited to, an indium oxide film, a tin oxide film, and a zinc oxide film. and so on.

[0490] For example, examples of the oxide semiconductor layer include, but are not limited to, an In-Zn-based oxide film, a Sn-Zn-based oxide film, an Al -Zn-based oxide film, a Zn-Mg-based oxide film, a Sn-Mg-based oxide film, an In-Mg-based oxide film, an In-Ga-based oxide film, and so on.

[0491] The A-B-based oxide film (A and B are elements) means a film containing A, B, and oxygen.

[0492] For example, as the oxide semiconductor layer, an In-Ga-Zn-based oxide film, an In-Sn-Zn-based oxide film, a Sn-Ga-Zn-based oxide film, an In-Al-Zn-based oxide film, an In-Hf-Zn-based oxide film, an In-La-Zn-based oxide film, an In-Ce-Zn-based oxide film, an In-Pr-Zn-based oxide film, an In-Nd-Zn-based oxide film, an In-Sm-Zn-based oxide film, an In-Eu-Zn-based oxide film, an In-Gd-Zn-based oxide film, an In-Tb-Zn-based oxide film, an In-Dy-Zn-based oxide film, an In-Ho-Zn-based oxide film, an In-Er-Zn-based oxide film, an In-Tm-Zn-based oxide film, an In-Yb-Zn-based oxide film, an In-Lu-Zn-based oxide film, an Al-Ga-Zn-based oxide film, a Sn-Al-Zn-based oxide film, etc. are available, but not limited to these. .

[0493] The A-B-C-based oxide film (where A, B, and C are elements) means a film containing A, B, C, and oxygen. .

[0494] For example, as the oxide semiconductor layer, an In-Sn-Ga-Zn-based oxide film, an In-Hf-Ga-Zn-based oxide film, an In-Al-Ga-Zn-based oxide film, an In-Sn-Al-Zn-based oxide film, an In-Sn-Hf-Zn-based oxide film, an In-Hf-Al-Zn-based oxide film, etc. are available, but not limited to these. .

[0495] The A-B-C-D-based oxide film (where A, B, C, and D are elements) means a film containing A, B, C, D, and oxygen. .

[0496] As the oxide semiconductor layer, a film containing indium, gallium, zinc, and oxygen is particularly preferable. .

[0497] Fabricating both an N-type transistor and a P-type transistor using the oxide semiconductor layer is possible, but N-type transistors are preferred because they are more practical than P-type transistors. .

[0498] The oxide semiconductor layer preferably has a crystal structure.

[0499] The crystal is oriented so that the C-axis direction is perpendicular to the surface of the oxide semiconductor layer or the substrate. preferable.

[0500] The crystals with the C-axis oriented perpendicular to the surface of the oxide semiconductor layer or substrate are called CAAC (C This is called an Axis-Aligned Crystal.

[0501] The angle between the C axis of the crystal and the surface of the oxide semiconductor layer or the substrate is preferably 90 degrees, but it is also preferable that the angle be 80 degrees. It may be between 100°C and 100°C.

[0502] As an example of a method for manufacturing CAAC, an oxide semiconductor layer is formed by a sputtering method. In the first method, the substrate temperature during film formation is set to 200° C. or higher and 450° C. or lower.

[0503] In the first method, CAAC is formed on the lower and upper layers of an oxide semiconductor layer.

[0504] As an example of a method for manufacturing CAAC, an oxide semiconductor layer is formed, and then a 65 The second method involves heat treatment at 0°C or above for at least 3 minutes.

[0505] In the second method, a CAAC is formed at least on the upper layer of the oxide semiconductor layer (second method Pattern of Law A).

[0506] In the second method, the thickness of the oxide semiconductor layer is reduced, so that the lower and upper layers A CAAC can be formed (pattern B of the second method).

[0507] As an example of a method for producing CAAC, there is a third method of forming a second oxide semiconductor layer on a first oxide semiconductor layer formed by pattern B of the second method. The method for forming the oxide semiconductor layer in the second and third methods is not limited to the sputtering method.

[0508] The method for forming the oxide semiconductor layer in the second and third methods is not limited to the sputtering method. is not limited.

[0509] By the first to third methods, crystals can be formed in which the angle θ formed by the C axis and the surface of the oxide semiconductor layer or the substrate is 80 degrees or more and 100 degrees or less. or more and 100 degrees or less.

[0510] In the first to third methods, an oxide semiconductor layer having CAAC at least in the upper layer (surface) can be formed. formed.

[0511] Since the oxide semiconductor layer having CAAC is dense, it can block H2O, H, etc. able to.

[0512] The oxide semiconductor layer in contact with the insulating layer 150 preferably has an amorphous portion.

[0513] When the oxide semiconductor layer is formed of CAAC, at least a part of the oxide semiconductor layer in contact with the resin layer can be made amorphous by performing plasma treatment on the oxide semiconductor layer in contact with the resin layer. portion can be made amorphous. ified.

[0514] In order not to include H2O in the oxide semiconductor layer not in contact with the insulating layer 150, it is preferable not to perform plasma treatment on the oxide semiconductor layer not in contact with the insulating layer 150. oxide semiconductor layer not in contact with the insulating layer 150 is preferably not subjected to plasma treatment.

[0515] Examples of the plasma treatment include, but are not limited to, hydrogen plasma treatment, noble gas plasma treatment, halogen plasma treatment, etc. treatment, etc., but are not limited.

[0516] The crystalline state of the oxide semiconductor layer that does not contact the insulating layer 150 and the crystalline state of the oxide semiconductor layer that contacts the insulating layer 150 are preferably different.

[0517] For example, by making the crystalline state of the oxide semiconductor layer that contacts the insulating layer 150 a crystalline state in which H2O and H are more likely to penetrate than the oxide semiconductor layer that does not contact the insulating layer 150, the resistivity of the oxide semiconductor layer that contacts the insulating layer 150 can be made lower than the resistivity of the oxide semiconductor layer that does not contact the insulating layer 150.

[0518] For example, the oxide semiconductor layer that does not contact the insulating layer 150 is made an oxide semiconductor layer having CAAC. For example, the oxide semiconductor layer that contacts the insulating layer 150 is made a non-single crystal oxide semiconductor layer such as an amorphous oxide semiconductor layer, a microcrystalline oxide semiconductor layer, or a polycrystalline oxide semiconductor layer.

[0519] Note that examples of microcrystals include nanocrystals and microcrystals.

[0520] For example, by making the crystallinity of the oxide semiconductor layer that contacts the insulating layer 150 higher than the crystallinity of the oxide semiconductor layer that does not contact the insulating layer 150, the resistivity of the oxide semiconductor layer that contacts the insulating layer 150 can be made lower than the resistivity of the oxide semiconductor layer that does not contact the insulating layer 150.

[0521] In particular, when the oxide semiconductor layer that does not contact the insulating layer 150 is an oxide semiconductor layer having CAAC, the oxide semiconductor layer that contacts the insulating layer 150 can be made a single crystal oxide semiconductor layer.

[0522] The difference in crystalline state can be confirmed, for example, by electron beam diffraction or the like.

[0523] For example, if the electron diffraction pattern is different, it can be said that the crystal state is different.

[0524] The method for making the crystal state of the oxide semiconductor layer not in contact with the insulating layer 150 different from the crystal state of the oxide semiconductor layer in contact with the insulating layer 150 is not limited. For example, after simultaneously forming the oxide semiconductor layer not in contact with the insulating layer 150 and the oxide semiconductor layer in contact with the insulating layer 150, by destroying the crystal of one of the oxide semiconductor layer not in contact with the insulating layer 150 or the oxide semiconductor layer in contact with the insulating layer 150, the crystal state of the oxide semiconductor layer not in contact with the insulating layer 150 and the crystal state of the oxide semiconductor layer in contact with the insulating layer 150 can be made different.

[0525] For example, after simultaneously forming the oxide semiconductor layer not in contact with the insulating layer 150 and the oxide semiconductor layer in contact with the insulating layer 150, by destroying the crystal of one of the oxide semiconductor layer not in contact with the insulating layer 150 or the oxide semiconductor layer in contact with the insulating layer 150, the crystal state of the oxide semiconductor layer not in contact with the insulating layer 150 and the crystal state of the oxide semiconductor layer in contact with the insulating layer 150 can be made different. conductor layer, the crystal state of the oxide semiconductor layer not in contact with the insulating layer 150 or the crystal of one of the oxide semiconductor layers in contact with the insulating layer 150 is destroyed, so that the crystal state of the oxide semiconductor layer not in contact with the insulating layer 150 and the crystal state of the oxide semiconductor layer in contact with the insulating layer 150 can be made different. The methods for destroying the crystal include, but are not limited to, plasma treatment, ion doping method, ion implantation method, etc. For example, by making the formation method of the oxide semiconductor layer not in contact with the insulating layer 150 different from the formation method of the oxide semiconductor layer in contact with the insulating layer 150, the crystal state of the oxide semiconductor layer not in contact with the insulating layer 150 and the crystal state of the oxide semiconductor layer in contact with the insulating layer 150 can be made different.

[0526] When describing "B on A", it means that at least a part of B is located above A. The description includes, but is not limited to, the above.

[0527] For example, by making the formation method of the oxide semiconductor layer not in contact with the insulating layer 150 different from the formation method of the oxide semiconductor layer in contact with the insulating layer 150, the crystal state of the oxide semiconductor layer not in contact with the insulating layer 150 and the crystal state of the oxide semiconductor layer in contact with the insulating layer 150 can be made different. When describing "B on A", it means that at least a part of B is located above A. The description includes, but is not limited to, the above. For example, by making the formation method of the oxide semiconductor layer not in contact with the insulating layer 150 different from the formation method of the oxide semiconductor layer in contact with the insulating layer 150, the crystal state of the oxide semiconductor layer not in contact with the insulating layer 150 and the crystal state of the oxide semiconductor layer in contact with the insulating layer 150 can be made different.

[0528] When describing "B on A", it means that at least a part of B is located above A. The description includes, but is not limited to, the above.

[0529] At least a part of the configuration described in this embodiment can be implemented in appropriate combination with at least a part of the configuration described in other embodiments. The description includes, but is not limited to, the above.

[0530] (Embodiment 13) In other embodiments, although the transistor with an inverse staggered structure has been described, the structure of the transistor is not limited.

[0531] For example, a structure in which the source electrode and the drain electrode are disposed between the gate insulating film and the active layer may be used.

[0532] For example, a transistor with a normal staggered structure may be used.

[0533] For example, a bottom gate type transistor may be adopted, or a top gate type transistor may be adopted, or a double gate type transistor having gate electrodes above and below the active layer may be adopted.

[0534] The specific structure of the bottom gate type transistor is not limited, the specific structure of the top gate type transistor is not limited, and the specific structure of the double gate type transistor is not limited either.

[0535] At least a part of the configuration described in this embodiment can be implemented in appropriate combination with at least a part of the configuration described in other embodiments.

[0536] (Embodiment 14) In other embodiments, an example in which the oxide semiconductor layer 310 is used as the other electrode of the capacitive element or the other electrode of the display element has been shown, but the oxide semiconductor layer 310 may be used as one electrode of the capacitive element or one electrode of the display element. [[ID=D46]] When the oxide semiconductor layer 310 is used as one electrode of the capacitive element or one electrode of the display element, the oxide semiconductor layer 310 may be electrically connected to the transistor.

[0537] When the oxide semiconductor layer 310 is used as one electrode of the capacitive element or one electrode of the display element, the oxide semiconductor layer 310 may be electrically connected to the transistor.

[0538] The oxide semiconductor layer 310 may be used as an electrode for elements other than the capacitor element and the display element (for example, a memory element, a photoelectric conversion element, etc.).

[0539] When the oxide semiconductor layer 310 is used as one electrode of the display element, the conductive layer 701 may not be provided. It is not necessary.

[0540] When the oxide semiconductor layer 310 is used as an electrode for elements other than the display element (for example, a memory element, a photoelectric conversion element, etc.), the conductive layer 701 may not be provided. It is not necessary.

[0541] At least a part of the configuration described in this embodiment can be implemented in appropriate combination with at least a part of the configuration described in other embodiments. It can be implemented in appropriate combination with at least a part of the configuration described in other embodiments.

[0542] (Embodiment 15) A semiconductor device is a device having an element having a semiconductor.

[0543] Elements having a semiconductor include, for example, transistors, resistance elements, capacitor elements, diodes, etc. There is.

[0544] The transistor is preferably a field effect transistor, but is not limited thereto.

[0545] The transistor is preferably a thin film transistor, but is not limited thereto.

[0546] Examples of semiconductor devices include, but are not limited to, display devices having display elements, memory devices having memory elements , RFID, processors, etc.

[0547] Examples of display devices include, but are not limited to, liquid crystal display devices having liquid crystal elements, EL display devices having EL elements, electrophoretic display devices having electrophoretic elements, etc.

[0548] In other embodiments, although the liquid crystal display device has been mainly described, the oxide semiconductor layer 310 is applicable to any semiconductor device.

[0549] At least a part of the configuration described in this embodiment can be implemented in appropriate combination with at least a part of the configuration described in other embodiments.

Description of Reference Numerals

[0550] 101 Substrate 102 Substrate 150 Insulating layer 201 Conductive layer 202 Conductive layer 203 Conductive layer 211 Conductive layer 212 Conductive layer 213 Conductive layer 214 Conductive layer 222 Conductive layer 300 Insulating layer 301 Oxide semiconductor layer 302 Oxide semiconductor layer 303 Oxide semiconductor layer 310 Oxide semiconductor layer 500 Insulating layer 501 Conductive layer 502 Conductive layer 503 Conductive layer 511 Conductive layer 512 Conductive layer 513 Conductive layer 514 Conductive layer 521 Conductive layer 522 Conductive layer 523 Conductive layer 524 Conductive layer 525 Conductive layer 526 Conductive layer 527 Conductive layer 528 Conductive layer 529 Conductive layer 550 Conductive layer 599 Conductive layer 701 Conductive layer 711 Conductive layer 712 Conductive layer 800 Liquid crystal layer 900 Conductive layer 8001 First direction 8002 Second direction Tr Transistor L1 Wiring L2 Wiring L3 Wiring L4 Wiring C Capacitor element LC Liquid crystal element

Claims

1. A display device having a first transistor and a second transistor, wherein the first transistor is adjacent to the second transistor in the column direction, one of the source or drain of the first transistor is electrically connected to a source wiring, and one of the source or drain of the second transistor is electrically connected to the source wiring, a first conductive layer having a region that functions as a gate electrode of the first transistor and a region that functions as a first scanning line, a second conductive layer having a region that functions as a gate electrode of the second transistor and a region that functions as a second scanning line, an insulating layer having a region located above the first conductive layer and a region that functions as a gate insulating layer of the first transistor, a first semiconductor layer having a region in contact with the insulating layer and a region that functions as a channel formation region of the first transistor, a second semiconductor layer having a region in contact with the insulating layer and a region that overlaps with the first conductive layer, a third conductive layer having a region in contact with the first semiconductor layer and a region that functions as one of the source or drain of the first transistor, a fourth conductive layer having a region in contact with the first semiconductor layer and a region that functions as the other of the source or drain of the first transistor, a fifth conductive layer having a region that overlaps with the first conductive layer and a region in contact with the second semiconductor layer, and a sixth conductive layer electrically connected to the second conductive layer and having a region that functions as a pixel electrode, wherein the fifth conductive layer does not have a region that overlaps with the second conductive layer, and the area of the region where the second semiconductor layer overlaps with the first conductive layer is larger than the area of the region where the fourth conductive layer overlaps with the first conductive layer.

2. A display device having a first transistor and a second transistor, wherein the first transistor is adjacent to the second transistor in the column direction, one of the source or drain of the first transistor is electrically connected to a source wiring, and one of the source or drain of the second transistor is electrically connected to the source wiring, a first conductive layer having a region that functions as a gate electrode of the first transistor and a region that functions as a first scanning line, A second conductive layer having a region that functions as a gate electrode of the second transistor and a region that functions as a second scanning line. An insulating layer having a region located above the first conductive layer and a region that functions as a gate insulating layer of the first transistor. A first semiconductor layer having a region in contact with the insulating layer and a channel formation region of the first transistor. A second semiconductor layer having a region in contact with the insulating layer and a region overlapping the first conductive layer. A third conductive layer having a region in contact with the first semiconductor layer and a region that functions as one of a source or a drain of the first transistor. A fourth conductive layer having a region in contact with the first semiconductor layer and a region that functions as the other of a source or a drain of the first transistor. A fifth conductive layer having a region overlapping the first conductive layer and a region in contact with the second semiconductor layer. A sixth conductive layer electrically connected to the second conductive layer and having a region that functions as a pixel electrode. The fifth conductive layer does not have a region overlapping the second conductive layer. A display device in which, in a direction extending along the major axis of the first conductive layer, the width of the region where the second semiconductor layer and the first conductive layer overlap is larger than the width of the region where the fifth conductive layer and the first conductive layer overlap.

3. A display device having a first transistor and a second transistor. The first transistor is adjacent to the second transistor in the column direction. One of a source or a drain of the first transistor is electrically connected to a source wiring. A display device in which one of a source or a drain of the second transistor is electrically connected to the source wiring. A first conductive layer having a region that functions as a gate electrode of the first transistor and a region that functions as a first scanning line. A second conductive layer having a region that functions as a gate electrode of the second transistor and a region that functions as a second scanning line. An insulating layer having a region located above the first conductive layer and a region that functions as a gate insulating layer of the first transistor. A first semiconductor layer having a region in contact with the insulating layer and a channel formation region of the first transistor. A second semiconductor layer having a region in contact with the insulating layer and a region overlapping the first conductive layer. A third conductive layer having a region in contact with the first semiconductor layer and having a region functioning as one of the source or drain of the first transistor; A fourth conductive layer having a region in contact with the first semiconductor layer and having a region functioning as the other of the source or drain of the first transistor; A fifth conductive layer having a region overlapping with the first conductive layer and having a region in contact with the second semiconductor layer; A sixth conductive layer electrically connected to the second conductive layer and having a region functioning as a pixel electrode; and The fifth conductive layer does not have a region overlapping with the second conductive layer; The fifth conductive layer does not have a region overlapping with the sixth conductive layer; A display device in which an area of a region where the second semiconductor layer and the first conductive layer overlap is larger than an area of a region where the fourth conductive layer and the first conductive layer overlap. **Claim 4** A display device having a first transistor and a second transistor, wherein the first transistor is adjacent to the second transistor in a column direction, one of the source or drain of the first transistor is electrically connected to a source wiring, and one of the source or drain of the second transistor is electrically connected to the source wiring, a first conductive layer having a region functioning as a gate electrode of the first transistor and a region functioning as a first scanning line; a second conductive layer having a region functioning as a gate electrode of the second transistor and a region functioning as a second scanning line; an insulating layer having a region located above the first conductive layer and having a region functioning as a gate insulating layer of the first transistor; a first semiconductor layer having a region in contact with the insulating layer and having a region functioning as a channel formation region of the first transistor; a second semiconductor layer having a region in contact with the insulating layer and having a region overlapping with the first conductive layer; a third conductive layer having a region in contact with the first semiconductor layer and having a region functioning as one of the source or drain of the first transistor; a fourth conductive layer having a region in contact with the first semiconductor layer and having a region functioning as the other of the source or drain of the first transistor; a fifth conductive layer having a region overlapping with the first conductive layer and having a region in contact with the second semiconductor layer; a sixth conductive layer that is electrically connected to the second conductive layer and has a region that functions as a pixel electrode; the fifth conductive layer does not have a region overlapping with the second conductive layer; the fifth conductive layer does not have a region overlapping with the sixth conductive layer; a display device in which, in a direction extending along the major axis of the first conductive layer, the width of the region where the second semiconductor layer overlaps with the first conductive layer is larger than the width of the region where the fifth conductive layer overlaps with the first conductive layer. **Claim 5** The display device according to any one of claims 1 to 4, wherein the fourth conductive layer is disposed so as to entirely overlap with the first conductive layer. **Claim 6** The display device according to any one of claims 1 to 5, wherein the first to fourth conductive layers contain molybdenum and aluminum.

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