Image sensor

Abstract

To provide an image sensor capable of suppressing the decrease in light reception quantity in a gradation pixel.SOLUTION: An image sensor includes a first gradation pixel and a detection pixel provided at a position adjacent to the first gradation pixel. The first gradation pixel includes a first photoelectric conversion unit, and a first current collector unit that collects light in a first wavelength band in the first photoelectric conversion unit. The detection pixel is provided at a position adjacent to the first gradation pixel, and includes a detection photoelectric conversion unit and a detection circuit that detects the temporal change of the amount of light incident on the detection photoelectric conversion unit. In the first current collector unit, a high-refractive-index region having a predetermined refractive index and a low-refractive-index region having a lower refractive index than the high-refractive-index region are provided in accordance with a predetermined pattern.SELECTED DRAWING: Figure 3A

Description

Technical Field

[0001] The present invention relates to an image sensor.

Background Art

[0002] An image sensor photoelectrically converts incident light to generate an electrical signal. In recent years, development of an image sensor having a gradation pixel that generates an electrical signal according to the amount of received light and a detection pixel that detects a temporal change in the amount of received light has been advanced (for example, Patent Document 1). The gradation pixel and the detection pixel can be arranged on one semiconductor chip.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] When a detection pixel is provided together with a gradation pixel on one semiconductor chip, the amount of light received by the gradation pixel is likely to decrease compared to the case where only the gradation pixel is provided on one semiconductor chip. Therefore, in an image sensor having a gradation pixel and a detection pixel on one semiconductor chip, it is desirable to suppress a decrease in the amount of light received by the gradation pixel.

[0005] The present invention has been made in view of the above circumstances, and an object thereof is to provide an image sensor capable of suppressing a decrease in the amount of light received by a gradation pixel.

Means for Solving the Problems

[0006] The above object of the present invention is achieved by the following means.

[0007] (1) An image sensor including a first gradation pixel and a detection pixel provided at a position adjacent to the first gradation pixel, wherein the first gradation pixel includes a first photoelectric conversion unit and a first condensing unit that condenses light in a first wavelength range onto the first photoelectric conversion unit, the detection pixel includes a detection photoelectric conversion unit and a detection circuit that detects a temporal change in the amount of light incident on the detection photoelectric conversion unit, and a high refractive index region having a predetermined refractive index and a low refractive index region having a refractive index lower than that of the high refractive index region are provided in a predetermined pattern in the first condensing unit.

[0008] (2) The image sensor according to (1) above, wherein a pillar-shaped structure extending in the stacking direction of the first photoelectric conversion unit and the first condensing unit is provided in the high refractive index region.

[0009] (3) The image sensor according to (2) above, wherein a plurality of the pillar-shaped structures having different diameters are provided in the first condensing unit.

[0010] (4) Further including a second gradation pixel provided at a position adjacent to the detection pixel and including a second photoelectric conversion unit and a second condensing unit that condenses light in a second wavelength range different from the first wavelength range onto the second photoelectric conversion unit, and the high refractive index region and the low refractive index region are provided in a pattern different from the pattern of the first condensing unit in the second condensing unit. The image sensor according to any one of (1) to (3) above.

[0011] (5) The detection pixel has a detection condensing unit adjacent to the first condensing unit, and the light in the first wavelength range incident on a first condensing region including the first condensing unit and at least a part of the detection condensing unit is incident on the first photoelectric conversion unit, and the light in the second wavelength range incident on a second condensing region including the second condensing unit and at least a part of the detection condensing unit is incident on the second photoelectric conversion unit. The image sensor according to (4) above.

[0012] (6) The image sensor according to (5) above, wherein the size of the first condensing region is different from the size of the second condensing region.

[0013] (7) The image sensor according to (5) or (6) above, wherein the detection light collecting unit is provided with the high refractive index region and the low refractive index region.

[0014] (8) The image sensor according to any one of (5) to (7) above, wherein the detection pixel is provided between the detection photoelectric conversion unit and the detection light collecting unit, and further includes a detection color filter that selectively transmits light in a predetermined wavelength range.

[0015] (9) A third gradation pixel provided at a position adjacent to the detection pixel and including a third photoelectric conversion unit and a third light collecting unit that collects light in a third wavelength range different from the first wavelength range and the second wavelength range on the third photoelectric conversion unit, and the total number of the first gradation pixels, the second gradation pixels, and the third gradation pixels included in the unit pixel group is the same as the total number of the detection pixels included in the unit pixel group. The image sensor according to any one of (4) to (8) above.

[0016] (10) The image sensor according to any one of (4) to (9) above, wherein the first wavelength range and the second wavelength range are visible regions.

[0017] (11) The image sensor according to any one of (1) to (10) above, having a pixel array unit in which a plurality of the first gradation pixels and a plurality of the detection pixels are arranged at a predetermined pitch.

[0018] (12) The image sensor according to (11) above, wherein the low refractive index region and the high refractive index region are provided in different patterns in the first light collecting unit of each of the plurality of the first gradation pixels.

[0019] (13) The image sensor according to (12) above, wherein the symmetry of the low refractive index region and the high refractive index region is different in the first light collecting unit of each of the plurality of the first gradation pixels.

[0020] (14) The first light condensing unit has a first layer and a second layer laminated on the first layer with a predetermined shift amount from an end of the first layer. In each of the first layer and the second layer, the low refractive index region and the high refractive index region are provided in a predetermined pattern. The image sensor according to (11) above.

[0021] (15) In the first light condensing unit of each of the plurality of first gradation pixels, the shift amount between the first layer and the second layer is different. The image sensor according to (14) above.

[0022] (16) A signal output from the detection circuit of each of the plurality of detection pixels is subjected to binning processing. The image sensor according to any one of (11) to (15) above.

[0023] (17) The first gradation pixel is provided between the first photoelectric conversion unit and the first light condensing unit, and further has a first color filter that selectively transmits light in the first wavelength range. The image sensor according to any one of (1) to (16) above.

[0024] (18) The size of the first gradation pixel is equal to or larger than the size of the detection pixel. The image sensor according to any one of (1) to (17) above.

Advantages of the Invention

[0025] In the image sensor according to the present invention, a low refractive index region and a high refractive index region are provided in a predetermined pattern in the first light condensing unit. As a result, the light in the first wavelength range incident on the first light condensing unit is incident on the first photoelectric conversion unit, and at least a part of the light of the first wavelength among the light incident on the detection pixel is incident on the first photoelectric conversion unit. Therefore, the first gradation pixel can receive light in the first wavelength range from adjacent detection pixels as well. Therefore, it is possible to suppress a decrease in the amount of received light in the gradation pixel.

Brief Description of the Drawings

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Embodiments for Carrying Out the Invention

[0027] Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. In the following drawings, the same reference numerals refer to the same components, and on the drawings, the sizes of the respective components are represented at ratios different from the actual state for the clarity and convenience of explanation. On the other hand, the embodiments described below are merely exemplary, and various modifications are possible from such embodiments.

[0028] In the following, the places described as "upper part" or "above" may include not only those in direct contact and directly above but also those above without contact.

[0029] A component expressed in the singular includes a plurality of components unless it clearly means differently in the context. Also, when a certain part "includes" or "has" a certain component, it means that, unless there is a particularly contrary description, it does not exclude other components and may further include other components.

[0030] Also, the use of the term "the foregoing" and similar directive terms applies to both the singular and the plural.

[0031] Regarding the steps constituting a method, if the order is clearly described or there is no contrary description, the steps are executed in an appropriate order. It is not necessarily limited to the described order of the steps. The use of all examples or exemplary terms (for example, etc.) is merely for explaining the technical idea and is not limited by the examples or exemplary terms as long as it is not limited by the claims.

[0032] <Embodiment> (Configuration of Image Sensor 1) FIG. 1 is a block diagram showing a schematic configuration of an image sensor 1 according to an embodiment. The image sensor 1 has, for example, a pixel array unit 110, a driving unit 120, an arbiter 130, an event signal processing unit 140, and a luminance signal processing unit 150.

[0033] The pixel array unit 110 has, for example, a rectangular planar shape. The pixel array unit 110 is provided with a plurality of pixels 11 arranged regularly, for example. The pixel 11 includes a red pixel 11R, a green pixel 11G, a blue pixel 11B, and a detection pixel 11E. In the pixel array unit 110, unit pixel groups are arranged repeatedly. Here, for example, the red pixel 11R, the green pixel 11G, and the blue pixel 11B correspond to a specific example of the first gradation pixel, the second gradation pixel, and the third gradation pixel of the present invention. The detection pixel 11E detects a temporal change in the amount of received light. The detection pixel 11E is a so-called DVS (Dynamic Vision Sensor).

[0034] In the image sensor 1, the red pixel 11R, the green pixel 11G, the blue pixel 11B, and the detection pixel 11E are arranged at adjacent positions. That is, in this image sensor 1, gradation pixels and detection pixels are arranged on one semiconductor chip. Such an image sensor 1 can be suitably used for applications such as motion blur countermeasures.

[0035] The driving unit 120 supplies control signals to each of the red pixel 11R, the green pixel 11G, and the blue pixel 11B. Thereby, the red pixel 11R, the green pixel 11G, and the blue pixel 11B are driven.

[0036] The arbiter 130 arbitrates requests for event signal output from the detection pixel 11E. Specifically, when the arbiter 130 receives a request for event signal output from the detection pixel 11E, the arbiter 130 transmits a signal for permitting or not permitting event signal output to the detection pixel 11E. The detection pixel 11E that has received a permission signal from the arbiter 130 outputs an event signal to the event signal processing unit 140. The event signal will be described later.

[0037] The event signal processing unit 140 performs predetermined processing on the event signal output from the detection pixel 11E. The event signal on which the predetermined processing is performed by the event signal processing unit 140 is sent to a data processing unit (not shown).

[0038] The luminance signal processing unit 150 has, for example, an ADC (AD Converter). The luminance signal processing unit 150 AD-converts the analog luminance signals generated by each of the red pixel 11R, the green pixel 11G, and the blue pixel 11B, and transmits them to a data processing unit (not shown).

[0039] FIG. 2 shows an example of the planar configuration of each pixel 11.

[0040] In the pixel array unit 110, for example, each of the red pixel 11R, the green pixel 11G, the blue pixel 11B, and the detection pixel 11E is arranged at a predetermined pitch. For example, a unit pixel group is composed of one red pixel 11R, two green pixels 11G, one blue pixel 11B, and four detection pixels 11E. For example, the total number of the red pixel 11R, the green pixel 11G, and the blue pixel 11B included in the unit pixel group is the same as the total number of the detection pixels 11E included in the unit pixel group. The red pixel 11R, the green pixel 11G, the blue pixel 11B, and the detection pixel 11E each have, for example, a rectangular planar shape. The red pixel 11R, the green pixel 11G, the blue pixel 11B, and the detection pixel 11E each have, for example, the same planar shape as each other. It is preferable that the area of the light receiving surface of each of the red pixel 11R, the green pixel 11G, and the blue pixel 11B is equal to or larger than the area of the light receiving surface of the detection pixel 11E. For example, the size of each of the red pixel 11R, the green pixel 11G, and the blue pixel 11B is equal to or larger than the size of the detection pixel 11E.

[0041] FIG. 3A and FIG. 3B each represent a cross-sectional configuration along the a-a line and b-b line shown in FIG. 2. In the green pixel 11G, a green photoelectric conversion unit 111G, an antireflection film 113, a green color filter 114G, and a green light condensing unit 115G are laminated in this order (FIG. 3A). In the blue pixel 11B, a blue photoelectric conversion unit 111B, an antireflection film 113, a blue color filter 114B, and a blue light condensing unit 115B are laminated in this order (FIG. 3A). In the red pixel 11R, a red photoelectric conversion unit 111R, an antireflection film 113, a red color filter 114R, and a red light condensing unit 115R are laminated in this order (not shown). In the detection pixel 11E, a detection photoelectric conversion unit 111E, an antireflection film 113, a detection color filter 114E, and a detection light condensing unit 115E are laminated in this order (FIG. 3B). An element isolation unit 112 is provided around each of the red photoelectric conversion unit 111R, the green photoelectric conversion unit 111G, the blue photoelectric conversion unit 111B, and the detection photoelectric conversion unit 111E.

[0042] Hereinafter, the lamination direction of the photoelectric conversion unit (for example, the green photoelectric conversion unit 111G), the antireflection film 113, the color filter (for example, the green color filter 114G), and the light condensing unit (for example, the green light condensing unit 115G) of each pixel 11 may be referred to as the Z direction, the direction orthogonal to the Z direction may be referred to as the X direction, and the direction orthogonal to the Z direction and the X direction may be referred to as the Y direction.

[0043] FIG. 4A is a block diagram showing an example of the configuration of the red pixel 11R, the green pixel 11G, and the blue pixel 11B, and FIG. 4B is a block diagram showing an example of the configuration of the detection pixel 11E. The red photoelectric conversion unit 111R, the green photoelectric conversion unit 111G, and the blue photoelectric conversion unit 111B are each electrically connected to a readout circuit 116 (FIG. 4A). The detection photoelectric conversion unit 111E is electrically connected to a detection circuit 117 (FIG. 4B).

[0044] The red photoelectric conversion unit 111R, the green photoelectric conversion unit 111G, the blue photoelectric conversion unit 111B, and the detection photoelectric conversion unit 111E are provided, for example, on the semiconductor substrate 111 (FIGS. 3A and 3B). The red photoelectric conversion unit 111R, the green photoelectric conversion unit 111G, the blue photoelectric conversion unit 111B, and the detection photoelectric conversion unit 111E include photodiodes. The red photoelectric conversion unit 111R, the green photoelectric conversion unit 111G, the blue photoelectric conversion unit 111B, and the detection photoelectric conversion unit 111E each generate charges corresponding to the amount of received light and accumulate the generated charges up to a certain amount.

[0045] The luminance signals photoelectrically converted by the red photoelectric conversion unit 111R, the green photoelectric conversion unit 111G, and the blue photoelectric conversion unit 111B are sent to the readout circuit 116 (FIG. 4A). In the readout circuit 116, the luminance signals are read out according to the control of the driving unit 120 and supplied to the luminance signal processing unit 150.

[0046] The electrical signal photoelectrically converted by the detection photoelectric conversion unit 111E is sent to the detection circuit 117 (FIG. 4B). The detection circuit 117 detects the temporal change in the amount of light incident on the detection photoelectric conversion unit 111E. Specifically, when a change exceeding the threshold value occurs in the electrical signal photoelectrically converted by the detection photoelectric conversion unit 111E, the change in the electrical signal is detected as an event. When an event is detected, the detection circuit 117 outputs a request for event signal output to the arbiter 130. When receiving a permission signal for event signal output from the arbiter 130, the detection circuit 117 supplies the event signal to the event signal processing unit 140.

[0047] The element isolation unit 112 plays a role of electrically isolating the red pixel 11R, the green pixel 11G, the blue pixel 11B, and the detection pixel 11E from each other. The element isolation unit 112 is made of, for example, polycrystalline silicon (p-Si). The element isolation unit 112 is formed, for example, from the front surface to the back surface of the semiconductor substrate 111.

[0048] The antireflection film 113 provided on the semiconductor substrate 111 serves to prevent reflection of light on the surface of the semiconductor substrate 111. The antireflection film 113 contains, for example, silicon oxide (SiO x ), silicon nitride (SiN x ), silicon oxynitride (SiO x N y ), hafnium oxide (HfO), or tantalum oxide (TaO), etc. A fixed electrification layer may be provided between the antireflection film 113 and the semiconductor substrate 111.

[0049] The red color filter 114R selectively transmits light in the red wavelength range. The green color filter 114G selectively transmits light in the green wavelength range. The blue color filter 114B selectively transmits light in the blue wavelength range. By providing the red color filter 114R, the green color filter 114G, and the blue color filter 114B, it is possible to suppress the occurrence of color mixing between pixels. The detection color filter 114E selectively transmits light in, for example, the red wavelength range, the green wavelength range, or the blue wavelength range. The detection color filter 114E may be a transparent layer.

[0050] The red light condensing unit 115R, the green light condensing unit 115G, and the blue light condensing unit 115B each condense light having wavelengths in the visible region. The red light condensing unit 115R condenses the light in the red wavelength range among the incident light onto the red photoelectric conversion unit 111R. The green light condensing unit 115G condenses the light in the green wavelength range among the incident light onto the green photoelectric conversion unit 111G. The blue light condensing unit 115B condenses the light in the blue wavelength range among the incident light onto the blue photoelectric conversion unit 111B.

[0051] In this embodiment, the green light condensing unit 115G is provided with a high refractive index region 51 and a low refractive index region 52 having a refractive index lower than that of the high refractive index region 51 in a predetermined pattern. Although details will be described later, thereby, the light in the green wavelength band incident on the green light condensing unit 115G is incident on the green photoelectric conversion unit 111G, and at least a part of the light in the green wavelength band among the light incident on the adjacent detection pixels 11E is incident on the green photoelectric conversion unit 111G. In other words, the pattern of the high refractive index region 51 and the low refractive index region 52 is formed in the green light condensing unit 115G so that the light in the green wavelength band travels from the detection pixel 11E toward the green photoelectric conversion unit 111G.

[0052] Furthermore, the high refractive index region 51 and the low refractive index region 52 are provided in the blue light condensing unit 115B in a pattern different from that of the green light condensing unit 115G. Thereby, the light in the blue wavelength band incident on the blue light condensing unit 115B is incident on the blue photoelectric conversion unit 111B, and at least a part of the light in the blue wavelength band among the light incident on the adjacent detection pixels 11E is incident on the blue photoelectric conversion unit 111B. In other words, the pattern of the high refractive index region 51 and the low refractive index region 52 is formed in the blue light condensing unit 115B so that the light in the blue wavelength band travels from the detection pixel 11E toward the blue photoelectric conversion unit 111B.

[0053] Furthermore, the high refractive index region 51 and the low refractive index region 52 are provided in the red light condensing unit 115R in a pattern different from those of the green light condensing unit 115G and the blue light condensing unit 115B. Thereby, the light in the red wavelength band incident on the red light condensing unit 115R is incident on the red photoelectric conversion unit 111R, and at least a part of the light in the red wavelength band among the light incident on the adjacent detection pixels 11E is incident on the red photoelectric conversion unit 111R. In other words, the pattern of the high refractive index region 51 and the low refractive index region 52 is formed in the red light condensing unit 115R so that the light in the red wavelength band travels from the detection pixel 11E toward the red photoelectric conversion unit 111R.

[0054] The high refractive index region 51 is a region having a predetermined refractive index. In this high refractive index region 51, for example, pillar-shaped structures extending in the Z direction are provided. This structure has, for example, a cylindrical shape or a prismatic shape. For example, by adjusting the refractive index of the constituent material of this structure, the refractive index of the high refractive index region 51 can be adjusted. The structure includes, for example, at least one of crystalline silicon (c-Si), polycrystalline silicon (p-Si), amorphous silicon (a-Si), III-V compound semiconductors (such as GaP, GaN, GaAs), silicon carbide (SiC), titanium oxide (TiO2), and silicon nitride (SiN).

[0055] The diameter (size in the X and Y directions) of this structure is, for example, 50 nm or more and 500 nm or less. The height (size in the Z direction) of this structure is, for example, 500 nm or more and 2000 nm or less.

[0056] A plurality of such structures are provided in each of the red light condensing unit 115R, the green light condensing unit 115G, and the blue light condensing unit 115B. For example, in the red light condensing unit 115R, the green light condensing unit 115G, and the blue light condensing unit 115B, at least one of the size of the diameter, the number of arrangements, the arrangement position, and the arrangement interval of this structure is different from each other. Thereby, the patterns of the high refractive index region 51 and the low refractive index region 52 can be made different among the green light condensing unit 115G, the blue light condensing unit 115B, and the red light condensing unit 115R. For example, a plurality of structures having different diameters are provided in each of the red light condensing unit 115R, the green light condensing unit 115G, and the blue light condensing unit 115B.

[0057] In the red light condensing unit 115R, the green light condensing unit 115G, and the blue light condensing unit 115B, a low refractive index region 52 is provided between the scattered high refractive index regions 51. The low refractive index region 52 is constituted by, for example, a dielectric material filling between a plurality of structures. The low refractive index region 52 is constituted by, for example, silicon oxide (SiO2). The low refractive index region 52 may contain air.

[0058] The detection condensing unit 115E condenses incident light onto the detection photoelectric conversion unit 111E. The detection condensing unit 115E is constituted by, for example, an on-chip lens. The on-chip lens is constituted by an inorganic material such as silicon oxide (SiOx) and silicon nitride (SiNx), for example.

[0059] (Operation and effect of the image sensor 1) In the image sensor 1, a high refractive index region 51 and a low refractive index region 52 are provided in the green condensing unit 115G in a predetermined pattern. Thereby, light in the green wavelength region incident on the green condensing unit 115G enters the green photoelectric conversion unit 111G, and at least a part of the light in the green wavelength region among the light incident on adjacent detection pixels 11E also enters the green photoelectric conversion unit 111G. The same applies to the red condensing unit 115R and the blue condensing unit 115B. Therefore, each of the red pixel 11R, the green pixel 11G, and the blue pixel 11B can receive light in the red wavelength region, the green wavelength region, and the blue wavelength region from adjacent detection pixels 11E as well. Thus, it is possible to suppress a decrease in the amount of received light in the red pixel 11R, the green pixel 11G, and the blue pixel 11B. Hereinafter, this operation and effect will be described using a comparative example.

[0060] FIG. 5A shows a planar configuration of an image sensor 1000 according to a comparative example, and FIG. 5B shows a cross-sectional configuration taken along line b-b shown in FIG. 5A. In this image sensor 1000, each of the red pixel 11R, the green pixel 11G, and the blue pixel 11B has a condensing unit 1115. The condensing unit 1115 is not provided with a high refractive index region and a low refractive index region (for example, the high refractive index region 51 and the low refractive index region 52 in FIG. 2). The condensing unit 1115 is constituted by, for example, an on-chip lens. In this regard, the image sensor 1000 is different from the image sensor 1.

[0061] FIG. 6A and FIG. 6B schematically show the light collecting regions 100R, 100G, and 100B of the red pixel 11R, the green pixel 11G, and the blue pixel 11B. In this image sensor 1000, light Lg in the green wavelength region is received by the green photoelectric conversion unit 111G only through the green light collecting unit 115G. In such an image sensor 1000, due to the detection light collecting unit 115E, it becomes difficult to secure a sufficient size of the light collecting region 100G. The same applies to the light collecting regions 100G and 100B. As a result, in the image sensor 1000, a sufficient amount of light reception cannot be maintained in the red pixel 11R, the green pixel 11G, and the blue pixel 11B, and there is a risk of a decrease in sensitivity. In addition, there is a risk that an image that sufficiently reflects luminance information and color information cannot be generated.

[0062] On the other hand, in the image sensor 1 of the present embodiment, a high refractive index region 51 and a low refractive index region 52 are provided in a predetermined pattern in each of the red light collecting unit 115R, the green light collecting unit 115G, and the blue light collecting unit 115B. Thereby, the light collecting region of each of the red pixel 11R, the green pixel 11G, and the blue pixel 11B can be expanded.

[0063] FIG. 7 schematically shows the light collecting regions 100R, 100G, and 100B in the image sensor 1. Since the high refractive index region 51 and the low refractive index region 52 are provided in a predetermined pattern in the green light collecting unit 115G, at least a part of the light in the green wavelength region of the light incident on the detection light collecting unit 115E travels toward the green light collecting unit 115G. Further, at least a part of the light in the green wavelength region of the light incident on the adjacent blue light collecting unit 115B and red light collecting unit 115R also travels toward the green light collecting unit 115G. In this way, the light collecting region 100G is formed over a wider range than the green light collecting unit 115G, and it becomes easier to maintain a sufficient amount of light reception.

[0064] In addition, in the blue light condensing portion 115B, the high refractive index region 51 and the low refractive index region 52 are provided in a pattern different from that of the green light condensing portion 115G. Further, in the red light condensing portion 115R, the high refractive index region 51 and the low refractive index region 52 are provided in a pattern different from those of the green light condensing portion 115G and the blue light condensing portion 115B. As a result, similar to the above description, light condensing regions 100B and 100R with a wider range than the blue light condensing portion 115B and the red light condensing portion 115R are formed, and it becomes easier to maintain a sufficient amount of received light. Therefore, in the image sensor 1, a sufficient amount of received light can be maintained in the red pixels 11R, the green pixels 11G, and the blue pixels 11B, and a decrease in sensitivity can be suppressed. Also, in the image sensor 1, an image that sufficiently reflects luminance information and color information can be generated.

[0065] Furthermore, in the image sensor 1, for example, the light condensing regions 100R, 100G, and 100B are formed to have substantially the same size as each other. As a result, an image with high resolution and good balance can be generated.

[0066] Hereinafter, a modified example of the image sensor 1 described in the above embodiment will be described. In the following, in order to avoid duplication of description, detailed description of configurations similar to those of the image sensor 1 described in the above embodiment will be omitted.

[0067] <Modified Example 1> FIGS. 8A and 8B show an example of the configuration of a main part of the image sensor 1 according to Modified Example 1. FIG. 8A shows an example of the planar configuration of each pixel 11. FIG. 8B shows a cross-sectional configuration along the b-b line shown in FIG. 8A. This image sensor 1 has a pattern different from the pattern of the high refractive index region 51 and the low refractive index region 52 shown in FIG. 2. In this regard, the image sensor 1 according to Modified Example 1 is different from the image sensor 1 of the above embodiment.

[0068] FIG. 9 schematically shows the light condensing regions 100R, 100G, and 100B in this image sensor 1. In this image sensor 1, the light condensing regions 100R and 100B are larger than the light condensing region 100G. Thus, the sizes of the light condensing regions 100R, 100G, and 100B may be changed according to the wavelength range of the light to be condensed.

[0069] FIGS. 10 and 11 are schematic diagrams showing the relationship between the size of the high refractive index region 51 and the wavefront. The size of the high refractive index region 51 is proportional to, for example, the diameter of the structure constituting the high refractive index region 51. FIG. 10 shows the patterns of the high refractive index region 51 and the low refractive index region 52 shown in FIG. 2. FIG. 11 shows the patterns of the high refractive index region 51 and the low refractive index region 52 shown in FIG. 8A.

[0070] As the refractive index increases, the speed of light tends to decrease. In FIG. 8A (and FIG. 11), in each of the red light condensing portion 115R and the blue light condensing portion 115B, compared with FIG. 2 (and FIG. 10), some of the high refractive index regions 51 are large, and the high refractive index regions 51 gradually become smaller from the center portion to the peripheral portion of the pixel. Thereby, in the red pixel 11R and the blue pixel 11B, the speed of light decreases, and a more gentle light wavefront is formed. Therefore, the light condensing regions 100R and 100B can be made larger.

[0071] Thus, compared with FIG. 2, in the image sensor 1 having the patterns of the high refractive index region 51 and the low refractive index region 52 shown in FIGS. 8A and 8B, wider light condensing regions 100R and 100B are formed. Thereby, it becomes possible to further improve the sensitivity of the image sensor 1.

[0072] <Modification 2> FIG. 12A shows an example of the planar configuration of the image sensor 1 according to Modification 2. In this image sensor 1, the patterns of the high refractive index region 51 and the low refractive index region 52 shown in FIG. 2 and the patterns of the high refractive index region 51 and the low refractive index region 52 shown in FIG. 8A are provided. In this regard, the image sensor 1 according to Modification 2 is different from the image sensor 1 of the above-described embodiment.

[0073] In the image sensor 1, for example, the patterns of the high refractive index region 51 and the low refractive index region 52 may be made different according to the positions of the red pixel 11R, the green pixel 11G, and the blue pixel 11B in the pixel array unit 110.

[0074] FIG. 12B shows an example of the arrangement of the structural patterns of the high refractive index region 51 and the low refractive index region 52. For example, the patterns of the high refractive index region 51 and the low refractive index region 52 are different for each of the central portion 1101, the peripheral portion 1102, and the end portion 1103 within the pixel array unit 110. The central portion 1101 is, for example, a circular portion arranged at the center of the rectangular pixel array unit 110. The peripheral portion 1102 is a ring-shaped portion surrounding the central portion 1101. The end portion 1103 is a portion outside the peripheral portion 1102.

[0075] For example, in the central portion 1101, a red light collecting portion 115R, a green light collecting portion 115G, and a blue light collecting portion 115B provided with a structural pattern emphasizing the resolution of the high refractive index region 51 and the low refractive index region 52 shown in FIG. 2 are provided. In the end portion 1103, a red light collecting portion 115R, a green light collecting portion 115G, and a blue light collecting portion 115B provided with a structural pattern emphasizing the sensitivity of the high refractive index region 51 and the low refractive index region 52 shown in FIG. 8A are provided. In the peripheral portion 1102, a red light collecting portion 115R, a green light collecting portion 115G, and a blue light collecting portion 115B are provided with patterns of the high refractive index region 51 and the low refractive index region 52 shown in FIGS. 2 and 8A in consideration of a good balance between resolution and sensitivity.

[0076] In this way, by varying the patterns of the high refractive index region 51 and the low refractive index region 52 according to the positions of the red pixel 11R, the green pixel 11G, and the blue pixel 11B in the pixel array unit 110, the image sensor 1 achieves both high resolution and high sensitivity.

[0077] In the image sensor 1, the red light condensing unit 115R, the green light condensing unit 115G, and the blue light condensing unit 115B may each have a pattern other than the patterns of the high refractive index region 51 and the low refractive index region 52 shown in FIGS. 2 and 8A.

[0078] FIGS. 13A to 15B show other examples of the patterns of the high refractive index region 51 and the low refractive index region 52 provided in the red light condensing unit 115R. FIGS. 13A, 14A, and 15A show the planar configurations of the red pixel 11R, and FIGS. 13B, 14B, and 15B show the cross-sectional configurations along the b-b lines shown in FIGS. 13A, 14A, and 15A, respectively.

[0079] In the red pixel 11R shown in FIGS. 13A and 13B, the high refractive index region 51 and the low refractive index region 52 are provided with high symmetry. In the red pixel 11R shown in FIGS. 14A and 14B, the Y-axis symmetry is broken compared to the patterns of the high refractive index region 51 and the low refractive index region 52 shown in FIGS. 13A and 13B. Specifically, the high refractive index region 51 on the left side of the paper surface is smaller than that on the right side of the paper surface. In the red pixel 11R shown in FIGS. 15A and 15B, the Y-axis symmetry is further broken compared to the patterns of the high refractive index region 51 and the low refractive index region 52 shown in FIGS. 14A and 14B. Specifically, the high refractive index region 51 on the left side of the paper surface is even smaller than that on the right side of the paper surface.

[0080] For example, in the central portion 1101 of the pixel array portion 110, red pixels 11R shown in FIGS. 13A and 13B are provided. In the peripheral portion 1102, red pixels 11R shown in FIGS. 14A and 14B are provided. In the end portion 1103, red pixels 11R shown in FIGS. 15A and 15B are provided. Similarly, for the green pixels 11G and blue pixels 11B, the patterns of the high refractive index region 51 and the low refractive index region 52 may be made different.

[0081] In this way, according to the positions of the red pixels 11R, green pixels 11G, and blue pixels 11B in the pixel array portion 110, the symmetry of the patterns of the high refractive index region 51 and the low refractive index region 52 may be made different. Thereby, in the peripheral portion 1102 and the end portion 1103, the light L incident on the pixel array portion 110 at an angle with the Z direction can be more efficiently guided to the red photoelectric conversion portion 111R, the green photoelectric conversion portion 111G, and the blue photoelectric conversion portion 111B.

[0082] As described above, the image sensor 1 according to the second modification includes a red light condensing portion 115R having a high refractive index region 51 and a low refractive index region 52 provided in the first pattern, and a red light condensing portion 115R having a high refractive index region 51 and a low refractive index region 52 provided in a second pattern different from the first pattern. The same applies to the green light condensing portion 115G and the blue light condensing portion 115B. At least one of the red light condensing portion 115R, the green light condensing portion 115G, and the blue light condensing portion 115B of the image sensor 1 may have a high refractive index region 51 and a low refractive index region 52 provided in the first pattern and the second pattern.

[0083] <Modification 3> Figures 16A and 16B show an example of the cross-sectional configuration of the image sensor 1 according to Modification 3. Figures 16A and 16B respectively correspond to the cross-sectional configurations along the a-a line and b-b line shown in FIG. 2. In this image sensor 1, a red color filter 114R, a green color filter 114G, a blue color filter 114B, and a detection color filter 114E are not provided. In this regard, the image sensor 1 according to Modification 3 is different from the image sensor 1 of the above-described embodiment.

[0084] In the green pixel 11G of this image sensor 1, a green photoelectric conversion unit 111G, an antireflection film 113, and a green condensing unit 115G are laminated in this order (FIG. 16A). In the blue pixel 11B, a blue photoelectric conversion unit 111B, an antireflection film 113, and a blue condensing unit 115B are laminated in this order (FIG. 16A). In the red pixel 11R, a red photoelectric conversion unit 111R, an antireflection film 113, and a red condensing unit 115R are laminated in this order (not shown). In the detection pixel 11E, a detection photoelectric conversion unit 111E, an antireflection film 113, and a detection condensing unit 115E are laminated in this order (FIG. 16B).

[0085] In such an image sensor 1, the red condensing unit 115R, the green condensing unit 115G, and the blue condensing unit 115B serve as color filters, and since color filters (114R, 114G, 114B, and 114E) are not provided, it is possible to suppress the manufacturing cost of the image sensor 1.

[0086] <Modification 4> Figures 17A to 22B show an example of the top view and cross-sectional configuration of the image sensor 1 according to Modification 4. In this image sensor 1, PDAF (Phase Detection Auto Focus) pixels are provided. In this regard, the image sensor 1 according to Modification 4 is different from the image sensor 1 of the above-described embodiment.

[0087] FIG. 17A shows an example of the planar configuration of each pixel 11. FIG. 17B shows a cross-sectional configuration along the b-b line shown in FIG. 17A. The PDAF pixel is provided, for example, in a gradation pixel, specifically, a red pixel 11R, a green pixel 11G, and a blue pixel 11B. In the green pixel 11G of the PDAF pixel, for example, two green photoelectric conversion units 111G divided by an element isolation part 112 of polycrystalline silicon (Poly Si) or silicon oxide (SiO2) share a green condensing part 115G. The same applies to the blue pixel 11B and the red pixel 11R of the PDAF pixel.

[0088] FIG. 18 shows another example of the planar configuration of each pixel 11 shown in FIG. 17A. In the green pixel 11G of the PDAF pixel, two green photoelectric conversion units 111G may be connected at a part thereof (a part without the element isolation part 112). The same applies to the blue pixel 11B and the red pixel 11R of the PDAF pixel. Also in this configuration, the red condensing part 115R, the green condensing part 115G, and the blue condensing part 115B can be formed in the manner described above.

[0089] FIG. 19A shows another example of the planar configuration of each pixel 11 shown in FIG. 17A. FIG. 19B shows a cross-sectional configuration along the b-b line shown in FIG. 19A. In the green pixel 11G of the PDAF pixel, a part of the green photoelectric conversion unit 111G may be covered with a light shielding film 118 (a metal film such as tungsten or TiN (titanium nitride)). The same applies to the blue pixel 11B and the red pixel 11R of the PDAF pixel. Also in this configuration, the red condensing part 115R, the green condensing part 115G, and the blue condensing part 115B can be formed on a color filter 114 and the light shielding film 118 formed, for example, with the same thickness, in the manner described above.

[0090] FIG. 20A shows still another example of the planar configuration of each pixel 11 shown in FIG. 17A. FIG. 20B shows a cross-sectional configuration along the b-b line shown in FIG. 20A. For example, a PDAF pixel may be constituted by two blue pixels 11B.

[0091] FIG. 21 shows another example of the cross-sectional configuration shown in FIG. 20B. In the two blue pixels 11B that make up the PDAF pixel, the on-chip lens 119 may be shared.

[0092] The PDAF pixel may be provided in the detection pixel 11E.

[0093] FIG. 22A shows an example of the planar configuration of each pixel 11. FIG. 22B shows the cross-sectional configuration along the b-b line shown in FIG. 22A. In the detection pixel 11E of the PDAF pixel, for example, two detection photoelectric conversion units 111E divided by the element isolation unit 112 share the detection condenser unit 115E. In the detection pixel 11E of the PDAF pixel, the two detection photoelectric conversion units 111E may be connected at a part thereof (a part without the element isolation unit 112) (see FIG. 18).

[0094] FIG. 23A shows another example of the planar configuration of each pixel 11 shown in FIG. 22A. FIG. 23B shows the cross-sectional configuration along the b-b line shown in FIG. 23A. In the detection pixel 11E of the PDAF pixel, for example, a part of the detection photoelectric conversion unit 111E is covered with the light shielding film 118.

[0095] Thus, in the image sensor 1 having the PDAF pixel, high-speed autofocus can be realized.

[0096] <Modification 5> FIG. 24 shows an example of the cross-sectional configuration of the main part of the image sensor 1 according to Modification 5. The green pixel 11G of this image sensor 1 has a green condenser unit 115G having a laminated structure. The red condenser unit 115R and the blue condenser unit 115B may have a laminated structure. In this regard, the image sensor 1 according to Modification 5 is different from the image sensor 1 of the above embodiment.

[0097] This green light condensing portion 115G includes, for example, a first layer 115Ga and a second layer 115Gb laminated in the Z direction on the first layer 115Ga. In each of the first layer 115Ga and the second layer 115Gb, a high refractive index region 51 and a low refractive index region 52 are provided in a predetermined pattern.

[0098] The second layer 115Gb is, for example, shifted by a shift amount S from the end in the X direction of the first layer 115Ga. b It may be arranged with a shift. The second layer 115Gb may be arranged with a predetermined shift amount from the end in the Y direction of the first layer 115Ga. For example, among a plurality of green pixels 11G, this shift amount S b may be different.

[0099] For example, in the green pixel 11G arranged at the end 1103 (FIG. 12) of the pixel array portion 110, the shift amount S b is larger than that of the green pixel 11G arranged at the central portion 1101. Thus, the shift amount S b may be varied according to the position of the green pixel 11G in the pixel array portion 110. Thereby, in the peripheral portion 1102 and the end portion 1103, light incident on the pixel array portion 110 at an angle with respect to the Z direction can be more efficiently guided to the green photoelectric conversion portion 111G.

[0100] FIG. 25 shows another example of the cross-sectional configuration of the image sensor 1 shown in FIG. 24. The green light condensing portion 115G of this image sensor 1 further includes a third layer 115Gc laminated in the Z direction on the second layer 115Gb. In the third layer 115Gc as well, a high refractive index region 51 and a low refractive index region 52 are provided in a predetermined pattern.

[0101] The third layer 115Gc is, for example, shifted by a shift amount S from the end in the X direction of the second layer 115Gb. c It may be arranged with a shift. The third layer 115Gc may be arranged with a predetermined shift amount from the end in the Y direction of the second layer 115Gb. According to the position of the green pixel 11G in the pixel array portion 110, the shift amounts S b , S c may be varied.

[0102] FIG. 26 shows another example of the cross-sectional configuration of the image sensor 1 shown in FIG. 24. The green light condensing portion 115G of this image sensor 1 includes a first layer 115Ga and an on-chip lens 115Gd laminated in the Z direction on the first layer 115Ga. For example, the convex shape of the on-chip lens 115Gd may be varied according to the position of the green pixel 11G in the pixel array portion 110.

[0103] FIG. 27 shows another example of the cross-sectional configuration of the image sensor 1 shown in FIG. 24. The green light condensing portion 115G of this image sensor 1 includes a first layer 115Ga and a microlens array 115Ge laminated in the Z direction on the first layer 115Ga. For example, the array state of the microlens array 115Ge may be varied according to the position of the green pixel 11G in the pixel array portion 110.

[0104] FIG. 28 shows another example of the cross-sectional configuration of the image sensor 1 shown in FIG. 24. The green light condensing portion 115G of this image sensor 1 includes a first layer 115Ga, a second layer 115Gb, a third layer 115Gc, and a microlens array 115Ge. The green light condensing portion 115G may include the first layer 115Ga, the second layer 115Gb, and an on-chip lens 115Gd (not shown). The green light condensing portion 115G may include any combination of the first layer 115Ga, the second layer 115Gb, the third layer 115Gc, the on-chip lens 115Gd, and the microlens array 115Ge.

[0105] In such an image sensor 1, since the green light condensing portion 115G has a laminated structure, it is easy to adjust the light condensing direction according to the position of the green pixel 11G in the pixel array portion 110. The same applies to the red light condensing portion 115R and the blue light condensing portion 115B.

[0106] <Modification Example 6> Figures 29A and 29B show an example of the configuration of the main part of the image sensor 1 according to Modification 6. Figure 29A shows an example of the planar configuration of each pixel 11. Figure 29B shows the cross-sectional configuration along the b-b line shown in Figure 29A. In this image sensor 1, furthermore, a high refractive index region 51 and a low refractive index region 52 are provided in a predetermined pattern in the detection light condensing portion 115E of the detection pixel 11E. In this regard, the image sensor 1 according to Modification 6 is different from the image sensor 1 of the above-described embodiment.

[0107] In such an image sensor 1, in addition to the red light condensing portion 115R, the green light condensing portion 115G, and the blue light condensing portion 115B, a high refractive index region 51 and a low refractive index region 52 are also provided in a predetermined pattern in the detection light condensing portion 115E. As a result, a light condensing region is formed over a wider range than the detection light condensing portion 115E, and it becomes easier to maintain a sufficient amount of received light even in the detection pixel 11E.

[0108] <Other Modifications> For example, the red pixel 11R, the green pixel 11G, the blue pixel 11B, and the detection pixel 11E may have planar shapes other than those shown in the above-described embodiment and Modifications 1 to 6.

[0109] Figures 30, 31, and 32 show other examples of the planar shapes of the respective pixels 11 shown in Figure 2 and the like. For example, the red pixel 11R, the green pixel 11G, and the blue pixel 11B may have a shape of a polygon with five or more sides, for example, may have an octagonal planar shape (Figure 30). A square planar shape may be formed by each of the red pixel 11R, the green pixel 11G, and the blue pixel 11B and the detection pixel 11E (Figure 31). The sizes of each of the red pixel 11R, the green pixel 11G, and the blue pixel 11B may be larger than the size of the detection pixel 11E (Figures 30 and 31). The number of red pixels 11R, green pixels 11G, and blue pixels 11B per unit area may be larger than the number of detection pixels 11E (Figure 32).

[0110] For example, in the image sensor 1, the event signals output from the detection circuits 117 of the plurality of detection pixels 11E may be subjected to binning processing.

[0111] FIGS. 33 and 34 show an example of the connection state between the detection photoelectric conversion unit 111E of the detection pixel 11E and the detection circuit 117. For example, in the image sensor 1, the charges accumulated in the floating diffusions (FDs) of the two detection photoelectric conversion units 111E may be added and subjected to binning processing (FIG. 33). For example, in the image sensor 1, the charges accumulated in the floating diffusions of the four detection photoelectric conversion units 111E may be added and subjected to binning processing (FIG. 34). By subjecting the event signals output from the detection circuits 117 of the plurality of detection pixels 11E to binning processing, it is possible to improve the sensitivity of the image sensor 1.

[0112] For example, the gradation pixels of the image sensor 1 may have other configurations. For example, the gradation pixels of the image sensor 1 may include red pixels, green pixels, blue pixels, and white pixels. For example, the gradation pixels of the image sensor 1 may include cyan pixels, magenta pixels, and yellow pixels. For example, the gradation pixels of the image sensor 1 may include red pixels, yellow pixels, and blue pixels.

[0113] The configurations of the image sensor 1 and the like described above mainly describe the main configurations when explaining the features of the above-described embodiments, and are not limited to the above-described configurations. Within the scope of the claims, various modifications can be made. Also, it does not exclude the configurations provided in general image sensors 1 and the like. For example, the number of pixels belonging to one pixel unit, the distribution number of pixels, the layer distribution method of pixels, the number of layers, and the division number of bits of the counter (especially the division number of the upper bit group and the arrangement and stacking number) are not limited to the content of this embodiment.

[0114] For example, Modifications 1 to 6 may be combined. For example, the image sensor 1 may be configured by combining Modification 4 and Modification 6.

Explanation of Reference Numerals

[0115] 1 Solid-state imaging device 11 Pixels, 110 Pixel array section, 111 Substrate, 111R Red photoelectric conversion section, 111G Green photoelectric conversion section, 111B Blue photoelectric conversion section, 111E Detection photoelectric conversion section, 112 Element isolation section, 113 Antireflection film, 114R Red color filter, 114G Green color filter, 114B Blue color filter, 114E Detection color filter, 115R Red light condensing section, 115G Green light condensing section, 115B Blue light condensing section, 115E Detection light condensing section, 116 Readout circuit, 117 Detection circuit, 118 Light shielding film, 119 On-chip lens, 120 Driving section, 130 Arbiter, 140 Event signal processing section, 150 Tone signal processing section.

Claims

1. An image sensor including a first gradation pixel and a detection pixel provided at a position adjacent to the first gradation pixel, wherein the first gradation pixel includes a first photoelectric conversion unit and a first condensing unit that condenses light in a first wavelength range onto the first photoelectric conversion unit, the detection pixel includes a detection photoelectric conversion unit and a detection circuit that detects a temporal change in the amount of light incident on the detection photoelectric conversion unit, and a high refractive index region having a predetermined refractive index and a low refractive index region having a refractive index lower than that of the high refractive index region are provided in the first condensing unit in a predetermined pattern.

2. The image sensor according to claim 1, wherein a pillar-shaped structure extending in the stacking direction of the first photoelectric conversion unit and the first condensing unit is provided in the high refractive index region.

3. The image sensor according to claim 2, wherein a plurality of the pillar-shaped structures having different diameters are provided in the first condensing unit.

4. further including a second gradation pixel provided at a position adjacent to the detection pixel and including a second photoelectric conversion unit and a second condensing unit that condenses light in a second wavelength range different from the first wavelength range onto the second photoelectric conversion unit, wherein a high refractive index region and a low refractive index region are provided in the second condensing unit in a pattern different from the pattern of the first condensing unit.

5. the detection pixel has a detection condensing unit adjacent to the first condensing unit, light in the first wavelength range incident on a first condensing region including the first condensing unit and at least a part of the detection condensing unit is incident on the first photoelectric conversion unit, and light in the second wavelength range incident on a second condensing region including the second condensing unit and at least a part of the detection condensing unit is incident on the second photoelectric conversion unit.

6. The image sensor according to claim 5, wherein the size of the first condensing region is different from the size of the second condensing region.

7. The image sensor according to claim 5, wherein a high refractive index region and a low refractive index region are provided in the detection condensing unit.

8. The image sensor according to claim 5, wherein the detection pixel further includes a detection color filter provided between the detection photoelectric conversion unit and the detection condensing unit and selectively transmitting light in a predetermined wavelength range.

9. a third gradation pixel provided adjacent to the detection pixel and including a third photoelectric conversion unit and a third light collecting unit that collects light in a third wavelength range, which is different from the first wavelength range and the second wavelength range, onto the third photoelectric conversion unit; 5. The image sensor according to claim 4, wherein the total number of the first gradation pixels, the second gradation pixels, and the third gradation pixels included in a unit pixel group is the same as the total number of the detection pixels included in the unit pixel group.

10. The image sensor according to claim 4 , wherein the first wavelength range and the second wavelength range are in the visible range.

11. 2. The image sensor according to claim 1, comprising a pixel array portion in which the plurality of first gradation pixels and the plurality of detection pixels are arranged at a predetermined pitch.

12. The image sensor according to claim 11 , wherein the first light-collecting portion of each of the plurality of first gradation pixels has the low refractive index areas and the high refractive index areas formed in different patterns.

13. The image sensor according to claim 12 , wherein the first light-collecting portion of each of the plurality of first gradation pixels has a different symmetry between the low refractive index region and the high refractive index region.

14. the first light collecting portion has a first layer and a second layer stacked on the first layer with a predetermined shift amount shifted from an end of the first layer, 12. The image sensor according to claim 11, wherein the low refractive index regions and the high refractive index regions are provided in a predetermined pattern in each of the first layer and the second layer.

15. The image sensor of claim 14 , wherein the shift amount between the first layer and the second layer is different in the first light-collecting portion of each of the plurality of first gradation pixels.

16. The image sensor according to claim 11 , wherein the signals output from the detection circuits of the plurality of detection pixels are subjected to binning processing.

17. 2. The image sensor according to claim 1, wherein the first gradation pixel is provided between the first photoelectric conversion unit and the first light collecting unit, and further includes a first color filter that selectively transmits light in the first wavelength range.

18. 2. The image sensor according to claim 1, wherein the size of the first gradation pixel is equal to or larger than the size of the detection pixel.

Images