Substrate processing device and substrate processing method

Abstract

To reduce the amount of use of new process liquid.SOLUTION: A substrate processing device (100) includes a chamber (11) that accommodates a substrate (W) including a front surface (Wa) where a device is provided and a back surface (Wb) existing on the opposite side of the front surface (Wa), a substrate holding part (20) that holds the substrate (W) in the chamber (11), a chemical liquid supply part (30) that supplies chemical liquid to the front surface (Wa) of the substrate (W) held by the substrate holding part (20), a rinse liquid supply part (40) that supplies rinse liquid to the front surface (Wa) of the substrate (W) held by the substrate holding part (20), a recovery liquid storage tank (210) that stores recovery liquid obtained by collecting the liquid, and a back surface process liquid supply part (50) that supplies the recovery liquid stored in the recovery liquid storage tank (210) to the back surface (Wb) of the substrate (W).SELECTED DRAWING: Figure 2

Description

[Technical Field]

[0001] The present invention relates to a substrate processing apparatus and a substrate processing method. [Background technology]

[0002] 2. Description of the Related Art Substrate processing apparatuses are known that process substrates using a processing liquid. The substrate processing apparatuses are preferably used for processing semiconductor substrates.

[0003] Typically, a substrate processing apparatus processes a substrate with a chemical solution, then supplies a rinse solution to the substrate to clean the chemically processed substrate. In some substrate processing apparatuses, chemical and rinse solutions are supplied not only to the front surface of the substrate but also to the back surface of the substrate (see Patent Document 1). In the substrate processing apparatus of Patent Document 1, after supplying the chemical and rinse solutions to the front and back surfaces of the substrate, the substrate is dried. Then, infrared light emitted from the processing solution adhering to the back surface of the substrate passes through the substrate and is received by a light-receiving section of a detection unit, thereby detecting remaining liquid on the back surface of the substrate. At this time, the processing solution splashed from the substrate is collected in a recovery cup, and the collected processing solution is discharged to the outside of the processing unit through a drain outlet at the bottom of the recovery cup. In the substrate processing apparatus of Patent Document 1, if any liquid remains on the back surface of the substrate, a recovery rinse process is performed to eliminate the remaining liquid on the back surface of the substrate. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] Japanese Patent Application Publication No. 2019-125634 Summary of the Invention [Problem to be solved by the invention]

[0005] In recent years, in order to reduce the environmental impact, reduction in resources required for substrate processing has been considered. However, in the substrate processing apparatus of Patent Document 1, there is a risk that the amount of new processing liquid used will increase when processing a substrate.

[0006] The present invention has been made in view of the above-mentioned problems, and an object of the present invention is to provide a substrate processing apparatus and a substrate processing method that can reduce the amount of new processing liquid used. [Means for solving the problem]

[0007] According to one aspect of the present invention, a substrate processing apparatus includes a chamber that accommodates a substrate having a surface on which a device is provided and a back surface opposite the front surface, a substrate holding unit that holds the substrate within the chamber, a chemical liquid supply unit that supplies a chemical liquid to the front surface of the substrate held by the substrate holding unit, a rinse liquid supply unit that supplies a rinse liquid to the front surface of the substrate held by the substrate holding unit, a recovery liquid storage tank that stores a recovery liquid obtained by recovering a liquid, and a back surface processing liquid supply unit that supplies the recovery liquid stored in the recovery liquid storage tank to the back surface of the substrate.

[0008] In one embodiment, the substrate processing apparatus further includes a control unit that determines whether or not to recover the liquid into the recovery liquid storage tank.

[0009] In one embodiment, the substrate processing apparatus further includes a storage tank for storing liquid, a heater for heating the liquid flowing from the storage tank, and a temperature measurement unit for measuring the temperature of the liquid heated by the heater, and the control unit determines whether or not to recover the liquid heated by the heater into the recovery liquid storage tank based on the temperature measured by the temperature measurement unit.

[0010] In one embodiment, the substrate processing apparatus further includes an ozone gas generator that generates ozone gas, an ozone gas dissolution tank that dissolves the ozone gas generated in the ozone gas generator in a liquid to produce an ozone liquid, and a concentration measurement unit that measures the ozone concentration of the ozone liquid produced in the ozone gas dissolution tank, and the control unit determines whether or not to recover the ozone liquid produced in the ozone gas dissolution tank in the recovered liquid storage tank based on the ozone concentration measured by the concentration measurement unit.

[0011] In one embodiment, the chemical liquid supply unit includes a chemical liquid storage tank that stores the chemical liquid, and the recovery liquid storage tank stores at least a portion of the cleaning liquid used to clean the chemical liquid storage tank as the recovery liquid.

[0012] In one embodiment, the substrate processing apparatus further includes a cup that collects processing liquid splashed from the substrate held by the substrate holding part, a drainage pipe that connects the cup to the recovery liquid storage tank, and a chamber cleaning pipe that is disposed within the chamber and discharges cleaning liquid to clean the inside of the chamber, and the recovery liquid storage tank stores at least a portion of the cleaning liquid discharged from the chamber cleaning pipe as the recovery liquid.

[0013] In one embodiment, the rinse liquid supply unit includes a rinse liquid pipe through which the rinse liquid flows, and a valve provided in the rinse liquid pipe for adjusting the flow rate of the rinse liquid flowing through the rinse liquid pipe; the substrate processing apparatus further includes a branch pipe connected to the rinse liquid pipe downstream of the valve, through which the rinse liquid flows even when the valve is closed; and the recovery liquid storage tank stores the rinse liquid that has flowed through the branch pipe as the recovery liquid.

[0014] According to another aspect of the present invention, a substrate processing method includes the steps of: supplying a chemical solution to a surface of a substrate having a surface on which a device is provided and a back surface opposite the front surface; supplying a rinse liquid to the surface of the substrate after supplying the chemical solution to the front surface of the substrate; and supplying the recovery liquid from a recovery liquid storage tank that stores a recovery liquid obtained by recovering a liquid to the back surface of the substrate. [Effects of the Invention]

[0015] According to the present invention, the amount of new processing liquid used can be reduced. [Brief explanation of the drawings]

[0016] [Figure 1]1 is a schematic plan view of a substrate processing apparatus according to an embodiment of the present invention; [Figure 2] 1 is a schematic diagram of a substrate processing apparatus according to an embodiment of the present invention; [Figure 3] 1 is a block diagram of a substrate processing apparatus according to an embodiment of the present invention; [Figure 4] FIG. 2 is a flow chart of a substrate processing method according to the present embodiment. [Figure 5] 1(a) to 1(d) are schematic diagrams showing the flow of the substrate processing apparatus of this embodiment. [Figure 6] 1 is a schematic plan view of a substrate processing apparatus according to an embodiment of the present invention; [Figure 7] 1 is a schematic diagram of a substrate processing apparatus according to an embodiment of the present invention; [Figure 8] FIG. 2 is a flow chart of a substrate processing method according to the present embodiment. [Figure 9] 1 is a schematic plan view of a substrate processing apparatus according to an embodiment of the present invention; [Figure 10] 1 is a schematic diagram of a substrate processing apparatus according to an embodiment of the present invention; [Figure 11] FIG. 2 is a flow chart of a substrate processing method according to the present embodiment. [Figure 12] 1 is a schematic diagram of a substrate processing apparatus according to an embodiment of the present invention; [Figure 13] 1 is a schematic diagram of a substrate processing apparatus according to an embodiment of the present invention; [Figure 14] FIG. 2 is a flow chart of a substrate processing method according to the present embodiment. [Figure 15] 1 is a schematic plan view of a substrate processing apparatus according to an embodiment of the present invention; [Figure 16] 1 is a schematic diagram of a substrate processing apparatus according to an embodiment of the present invention; [Figure 17] FIG. 2 is a flow chart of a substrate processing method according to the present embodiment. [Figure 18] 1(a) to 1(d) are schematic diagrams showing the flow of the substrate processing apparatus of this embodiment. [Figure 19] 1 is a schematic diagram of a substrate processing apparatus according to an embodiment of the present invention; [Figure 20] 1A and 1B are schematic diagrams showing the flow of the substrate processing apparatus of the present embodiment. [Figure 21]1 is a schematic diagram of a substrate processing apparatus according to an embodiment of the present invention; [Figure 22] 1A and 1B are schematic diagrams showing the flow of the substrate processing apparatus of the present embodiment. [Figure 23] 1 is a schematic diagram of a substrate processing apparatus according to an embodiment of the present invention; [Figure 24] 1(a) to 1(c) are schematic diagrams showing the flow of the substrate processing apparatus of the present embodiment. [Figure 25] 1A and 1B are schematic diagrams showing the flow of the substrate processing apparatus of the present embodiment. [Figure 26] 1 is a schematic diagram of a substrate processing apparatus according to an embodiment of the present invention; [Figure 27] 1A and 1B are schematic diagrams showing the flow of the substrate processing apparatus of the present embodiment. [Figure 28] 1A and 1B are schematic diagrams showing the flow of the substrate processing apparatus of the present embodiment. [Figure 29] 1A and 1B are schematic diagrams showing the flow of the substrate processing apparatus of the present embodiment. [Figure 30] FIG. 2 is a schematic diagram showing a flow of the substrate processing apparatus according to the present embodiment. [Figure 31] 1 is a schematic diagram of a substrate processing apparatus according to an embodiment of the present invention; [Figure 32] 1(a) to 1(c) are schematic diagrams showing the flow of the substrate processing apparatus of the present embodiment. [Figure 33] 1(a) to 1(c) are schematic diagrams showing the flow of the substrate processing apparatus of the present embodiment. [Figure 34] FIG. 2 is a schematic diagram showing a flow of the substrate processing apparatus according to the present embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0017] Hereinafter, embodiments of a substrate processing apparatus and a substrate processing method according to the present invention will be described with reference to the drawings. In the drawings, identical or corresponding parts are designated by the same reference numerals, and description thereof will not be repeated. In this specification, to facilitate understanding of the invention, mutually orthogonal X-, Y-, and Z-axes may be described. Typically, the X- and Y-axes are parallel to the horizontal direction, and the Z-axis is parallel to the vertical direction.

[0018] First, an embodiment of a substrate processing apparatus 100 according to the present invention will be described with reference to Fig. 1. Fig. 1 is a schematic plan view of the substrate processing apparatus 100 of this embodiment.

[0019] The substrate processing apparatus 100 processes a substrate W. The substrate processing apparatus 100 processes the substrate W by performing at least one of etching, surface treatment, property imparting, treatment film formation, removal of at least a portion of a film, and cleaning on the substrate W.

[0020] The substrate W is used as a semiconductor substrate. The substrate W includes a semiconductor wafer. For example, the substrate W has a substantially circular disk shape. Here, the substrate processing apparatus 100 processes the substrates W one by one.

[0021] 1, the substrate processing apparatus 100 includes a plurality of substrate processing units 10, a processing liquid cabinet 110, a processing liquid box 120, a plurality of load ports LP, an indexer robot IR, a center robot CR, and a controller 101. The controller 101 controls the load ports LP, the indexer robot IR, and the center robot CR. The controller 101 may also control each component within the substrate processing units 10, the processing liquid cabinet 110, and the processing liquid box 120. The controller 101 includes a control unit 102 and a memory unit 104.

[0022] Each load port LP accommodates a plurality of stacked substrates W. The indexer robot IR transports the substrates W between the load port LP and the center robot CR. The center robot CR transports the substrates W between the indexer robot IR and the substrate processing units 10. Each substrate processing unit 10 processes the substrates W by discharging a processing liquid onto the substrate W. The processing liquid includes a chemical liquid, a rinse liquid, a cleaning liquid, a removal liquid, and / or a water repellent agent. The processing liquid cabinet 110 contains the processing liquid. The processing liquid cabinet 110 may contain a gas.

[0023] Specifically, the substrate processing units 10 form a plurality of towers TW (four towers TW in FIG. 1) arranged to surround the center robot CR in a plan view. Each tower TW includes a plurality of substrate processing units 10 stacked vertically (three substrate processing units 10 in FIG. 1). The processing liquid boxes 120 correspond to the plurality of towers TW, respectively. The liquid in the processing liquid cabinet 110 is supplied to all of the substrate processing units 10 included in the tower TW corresponding to the processing liquid box 120 via one of the processing liquid boxes 120. Furthermore, the gas in the processing liquid cabinet 110 is supplied to all of the substrate processing units 10 included in the tower TW corresponding to the processing liquid box 120 via one of the processing liquid boxes 120.

[0024] In the substrate processing apparatus 100, a boundary wall is arranged between an area where the center robot CR and the substrate processing units 10 are installed and an area where the processing liquid cabinets 110 are installed.

[0025] Typically, the processing liquid cabinet 110 has a reservoir (tank) for preparing the processing liquid. The processing liquid cabinet 110 may have a reservoir for one type of processing liquid or may have reservoirs for multiple types of processing liquid. The processing liquid cabinet 110 also has a pump, a valve, a heater, and / or a filter for circulating the processing liquid.

[0026] The processing liquid cabinet 110 includes a chemical liquid cabinet 110A and a rinse liquid cabinet 110B. For example, the chemical liquid cabinet 110A and the rinse liquid cabinet 110B are disposed apart from each other. Alternatively, the chemical liquid cabinet 110A and the rinse liquid cabinet 110B may be disposed adjacent to each other.

[0027] For example, the chemical liquid cabinet 110A supplies a chemical liquid to the processing liquid box 120. The rinsing liquid cabinet 110B supplies a rinsing liquid to the processing liquid box 120. The processing liquid box 120 supplies the chemical liquid and the rinsing liquid to the substrate processing unit 10.

[0028] Here, the processing liquid cabinet 110 further includes a collected liquid cabinet 110C. The collected liquid cabinet 110C stores collected liquid. For example, the collected liquid cabinet 110C collects liquid that has been used once as the collected liquid. The collected liquid cabinet 110C also supplies the collected liquid to the processing liquid box 120.

[0029] The collected liquid cabinet 110C has a collected liquid storage tank (tank) 210 that stores liquid that has been used once as collected liquid. The collected liquid stored in the collected liquid storage tank 210 is supplied to the processing liquid box 120.

[0030] The processing liquid cabinet 110 may have a collection liquid reservoir 210 for storing one type of collection liquid, or may have collection liquid reservoirs 210 for storing multiple types of collection liquid. The processing liquid cabinet 110 also has a pump, a valve, a heater, and / or a filter for circulating the collection liquid.

[0031] The control device 101 controls various operations of the substrate processing apparatus 100. The control device 101 causes the substrate processing unit 10 to process the substrate W.

[0032] The control device 101 includes a control unit 102 and a storage unit 104. The control unit 102 has a processor. The control unit 102 has, for example, a central processing unit (CPU). Alternatively, the control unit 102 may have a general-purpose computer.

[0033] The storage unit 104 stores data and computer programs. The data includes recipe data. The recipe data includes information indicating a plurality of recipes. Each of the plurality of recipes defines the processing content and processing procedure for the substrate W.

[0034] The storage unit 104 includes a main storage device and an auxiliary storage device. The main storage device is, for example, a semiconductor memory. The auxiliary storage device is, for example, a semiconductor memory and / or a hard disk drive. The storage unit 104 may include removable media. The control unit 102 executes computer programs stored in the storage unit 104 to perform substrate processing operations.

[0035] Next, the substrate processing unit 10 in the substrate processing apparatus 100 of this embodiment will be described with reference to Fig. 2. Fig. 2 is a schematic diagram of the substrate processing apparatus 100.

[0036] The substrate processing apparatus 100 includes a substrate processing unit 10, a chamber 11, a substrate holder 20, a chemical liquid supply unit 30, a rinse liquid supply unit 40, a back surface processing liquid supply unit 50, a cup 80, a drainage mechanism 90, and a recovery liquid storage tank 210.

[0037] The chamber 11 is substantially box-shaped and has an internal space. The chamber 11 accommodates the substrates W. Here, the substrate processing apparatus 100 is a single-wafer type that processes the substrates W one by one, and the chamber 11 accommodates the substrates W one by one. The substrates W are accommodated in the chamber 11 and processed in the chamber 11. The chamber 11 accommodates at least a portion of each of the substrate holder 20, the chemical liquid supply unit 30, the rinse liquid supply unit 40, the back surface processing liquid supply unit 50, and the cup 80.

[0038] The substrate holding part 20 holds the substrate W. The substrate W has a front surface Wa and a back surface Wb. The front surface Wa and back surface Wb of the substrate W are each the main surfaces of the substrate W. Devices are provided on the front surface Wa of the substrate W. The front surface Wa of the substrate W is the surface on which devices on which electronic circuits are formed are provided, while the back surface Wb of the substrate W is the surface on which such devices are not provided. For example, the front surface Wa of the substrate W is provided with a laminated structure in which recesses are formed.

[0039] The substrate holding unit 20 holds the substrate W horizontally. The substrate holding unit 20 rotates the substrate W while holding it. Here, the front surface Wa of the substrate W faces vertically upward, and the back surface Wb of the substrate W faces vertically downward. However, the front surface Wa of the substrate W may face vertically downward, and the back surface Wb of the substrate W may face vertically upward. In this way, the substrate holding unit 20 holds the substrate W horizontally so that one of the front surface Wa and the back surface Wb of the substrate W faces upward, and the other faces downward.

[0040] For example, the substrate holding unit 20 may be a clamping type that clamps the edge of the substrate W. Alternatively, the substrate holding unit 20 may have any mechanism that holds the substrate W from the back surface Wb. For example, the substrate holding unit 20 may be a vacuum type. In this case, the substrate holding unit 20 holds the substrate W horizontally by adsorbing the central portion of the back surface Wb of the substrate W, which is the surface on which devices are not formed, to its upper surface. Alternatively, the substrate holding unit 20 may be a combination of a clamping type that brings multiple chuck pins into contact with the peripheral edge surface of the substrate W, and a vacuum type.

[0041] For example, the substrate holder 20 includes a spin base 21, a chuck member 22, a shaft 23, an electric motor 24, a housing 25, and a nozzle 51. The chuck member 22 is provided on the spin base 21. The chuck member 22 chucks the substrate W. Typically, the spin base 21 is provided with a plurality of chuck members 22.

[0042] The shaft 23 is a hollow shaft. The shaft 23 extends vertically along the rotation axis Ax. The spin base 21 is coupled to the upper end of the shaft 23. The substrate W is placed above the spin base 21.

[0043] The spin base 21 is disk-shaped and supports the substrate W horizontally. The shaft 23 extends downward from the center of the spin base 21. The electric motor 24 applies a rotational force to the shaft 23. The electric motor 24 rotates the shaft 23 in a rotational direction, thereby rotating the substrate W and the spin base 21 around the rotation axis Ax. The housing 25 surrounds the shaft 23 and the electric motor 24.

[0044] The chemical liquid supply unit 30 supplies a chemical liquid to the substrate W. Typically, the chemical liquid supply unit 30 supplies the chemical liquid to the front surface Wa of the substrate W. At least a part of the chemical liquid supply unit 30 is housed in the chamber 11.

[0045] The chemical solution contains hydrofluoric acid. For example, the hydrofluoric acid may be heated to 40°C or higher and 70°C or lower, or 50°C or higher and 60°C or lower. However, the hydrofluoric acid does not have to be heated. The chemical solution may also contain phosphoric acid.

[0046] The chemical solution may include hydrogen peroxide. The chemical solution may also include SC1 (ammonia-hydrogen peroxide mixture), SC2 (hydrochloric acid-hydrogen peroxide mixture), or aqua regia (a mixture of concentrated hydrochloric acid and concentrated nitric acid). The chemical solution may also be diluted with a diluent.

[0047] The chemical liquid supply unit 30 includes a pipe 32, a nozzle 34, and a valve 36. The nozzle 34 is connected to the pipe 32. The chemical liquid is supplied to the pipe 32 from a supply source. The valve 36 opens and closes a flow path in the pipe 32. The nozzle 34 ejects the chemical liquid onto the front surface Wa of the substrate W.

[0048] Valve 36 adjusts the opening of pipe 32 to regulate the flow rate of the chemical solution flowing through pipe 32. Specifically, valve 36 includes a valve body (not shown) with a valve seat provided therein, a valve element that opens and closes the valve seat, and an actuator (not shown) that moves the valve element between an open position and a closed position.

[0049] The nozzle 34 may be configured to be movable relative to the substrate W. The chemical liquid supply unit 30 may further include a nozzle moving unit 38. The nozzle moving unit 38 may raise and lower the nozzle 34, or may rotate the nozzle 34 horizontally around a rotation axis. The nozzle moving unit 38 raises and lowers the nozzle 34. For example, the nozzle moving unit 38 includes a ball screw mechanism and an electric motor that provides driving force to the ball screw mechanism. The nozzle moving unit 38 also rotates the nozzle 34 horizontally. For example, the nozzle moving unit 38 includes an electric motor.

[0050] The chemical liquid supply unit 30 may include the chemical liquid cabinet 110A and the processing liquid box 120 shown in FIG.

[0051] The rinse liquid supply unit 40 supplies a rinse liquid to the substrate W. Typically, the rinse liquid is used to clean the substrate W. The rinse liquid supply unit 40 supplies the rinse liquid to the surface Wa of the substrate W. At least a portion of the rinse liquid supply unit 40 is housed in the chamber 11.

[0052] For example, the rinse liquid is used to clean the substrate W that has been treated with a chemical liquid. In one example, the rinse liquid may include any of deionized water (DIW), carbonated water, electrolytic ionized water, ozone water, ammonia water, hydrochloric acid water with a diluted concentration (for example, about 10 ppm to 100 ppm), and reduced water (hydrogen water).

[0053] The rinse liquid supply unit 40 includes a pipe 42, a nozzle 44, and a valve 46. The nozzle 44 is connected to the pipe 42. The rinse liquid is supplied to the pipe 42 from a supply source. The valve 46 opens and closes a flow path in the pipe 42. The nozzle 44 ejects the rinse liquid onto the front surface Wa of the substrate W.

[0054] The valve 46 adjusts the opening of the pipe 42 to adjust the flow rate of the rinse liquid flowing through the pipe 42. Specifically, the valve 46 may have the same configuration as the valve 36.

[0055] The nozzle 44 may be configured to be movable relative to the substrate W. The rinsing liquid supply unit 40 may further include a nozzle moving unit 48. The nozzle moving unit 48 may have a configuration similar to that of the nozzle moving unit 38.

[0056] The rinsing liquid supply unit 40 may include the rinsing liquid cabinet 110B and the processing liquid box 120 shown in FIG.

[0057] The back surface processing liquid supply unit 50 supplies a processing liquid to the back surface Wb of the substrate W. At least a part of the back surface processing liquid supply unit 50 is accommodated in the chamber 11.

[0058] For example, the back surface processing liquid supply unit 50 supplies a chemical liquid to the back surface Wb of the substrate W. Typically, while the chemical liquid supply unit 30 supplies a chemical liquid to the front surface Wa of the substrate W, the back surface processing liquid supply unit 50 supplies a chemical liquid to the back surface Wb of the substrate W. In one example, the back surface processing liquid supply unit 50 supplies the same type of chemical liquid as the chemical liquid supplied by the chemical liquid supply unit 30 to the back surface Wb of the substrate W.

[0059] Alternatively, the back surface processing liquid supply unit 50 supplies a rinse liquid to the substrate W. Typically, while the rinse liquid supply unit 40 supplies a rinse liquid to the front surface Wa of the substrate W, the back surface processing liquid supply unit 50 supplies a rinse liquid to the back surface Wb of the substrate W. In one example, the back surface processing liquid supply unit 50 supplies the same type of rinse liquid as the rinse liquid supplied by the rinse liquid supply unit 40 to the back surface Wb of the substrate W.

[0060] The back surface processing liquid supply unit 50 may supply a chemical liquid diluted with a dilution liquid (diluted chemical liquid) to the back surface Wb of the substrate W. Typically, while the chemical liquid supply unit 30 supplies the diluted chemical liquid to the front surface Wa of the substrate W, the back surface processing liquid supply unit 50 may supply the diluted chemical liquid to the back surface Wb of the substrate W.

[0061] In this embodiment, the back surface processing liquid supply unit 50 supplies a recovery liquid to the back surface Wb of the substrate W. Typically, the recovery liquid is a liquid obtained by recovering a processing liquid that has been used once. In one example, the recovery liquid is a liquid obtained by recovering a rinse liquid that has been used once. For example, the rinse liquid used to rinse the substrate W is recovered and used as the recovery liquid.

[0062] Typically, the substrate W is used in a microfabricated semiconductor device. For this reason, the chemical liquid or rinse liquid supplied from the supply source is a new, unused liquid, and the impurity concentration of the chemical liquid or rinse liquid supplied from the supply source is low. On the other hand, the recovery liquid may have a slightly higher impurity concentration than the chemical liquid or rinse liquid supplied from the supply source. This makes it possible to clean the back surface Wb of the substrate W and to prevent particles produced when the front surface Wa of the substrate W is treated with a chemical liquid or the like from adhering to the back surface Wb of the substrate W. However, it is also preferable that the impurity concentration of the recovery liquid be low.

[0063] For example, while the rinsing liquid supply unit 40 supplies a rinsing liquid to the front surface Wa of the substrate W, the back surface processing liquid supply unit 50 may supply a recovery liquid to the back surface Wb of the substrate W. Alternatively, while the chemical liquid supply unit 30 supplies a chemical liquid to the front surface Wa of the substrate W, the back surface processing liquid supply unit 50 may supply a recovery liquid to the back surface Wb of the substrate W. Alternatively, while the chemical liquid supply unit 30 supplies a diluted chemical liquid diluted with a dilution liquid to the front surface Wa of the substrate W, the back surface processing liquid supply unit 50 may supply a chemical liquid diluted with a recovery liquid to the back surface Wb of the substrate W.

[0064] The back surface processing liquid supply unit 50 has a nozzle 51, a pipe 52, a pipe 52c, a chemical liquid supply unit 54, a rinse liquid supply unit 56, and a recovery liquid supply unit 58. The pipe 52 is located inside the chamber 11. The pipe 52 passes vertically through the center of the shaft 23. The nozzle 51 is disposed at the end of the pipe 52. The nozzle 51 is located opposite the center of the back surface Wb of the substrate W. The pipe 52 is connected to a pipe 52c outside the chamber 11. The processing liquid to be supplied to the back surface Wb of the substrate W flows through the pipe 52c and the pipe 52. The processing liquid that has flowed through the pipe 52c and the pipe 52 is ejected from the nozzle 51 onto the back surface Wb of the substrate W.

[0065] The chemical liquid supply unit 54 supplies the chemical liquid to the rear surface Wb of the substrate W. In detail, the chemical liquid supply unit 54 supplies the chemical liquid to the rear surface Wb of the substrate W via the pipe 52c and the pipe 52.

[0066] The chemical liquid supply unit 54 includes a pipe 54a and a valve 54b. The chemical liquid is supplied to the pipe 54a from a supply source. The valve 54b opens and closes a flow path in the pipe 54a. The valve 54b adjusts the opening of the pipe 54a to regulate the flow rate of the chemical liquid flowing through the pipe 54a. Specifically, the valve 54b includes a valve body (not shown) with a valve seat provided therein, a valve element that opens and closes the valve seat, and an actuator (not shown) that moves the valve element between an open position and a closed position.

[0067] The chemical liquid that flows through the pipe 54a to the pipe 52c and the pipe 52 is discharged onto the rear surface Wb of the substrate W from the nozzle 51.

[0068] The rinse liquid supply unit 56 supplies the rinse liquid to the rear surface Wb of the substrate W. In detail, the rinse liquid supply unit 56 supplies the rinse liquid to the rear surface Wb of the substrate W via the pipe 52c and the pipe 52.

[0069] The rinse liquid supply unit 56 includes a pipe 56a and a valve 56b. The rinse liquid is supplied to the pipe 56a from a supply source. The valve 56b opens and closes a flow path in the pipe 56a. The valve 56b adjusts the opening of the pipe 56a to adjust the flow rate of the rinse liquid flowing through the pipe 56a. The valve 56b may have a configuration similar to that of the valve 54b.

[0070] The rinse liquid that flows through the pipe 56 a to the pipe 52 c and the pipe 52 is discharged onto the rear surface Wb of the substrate W from the nozzle 51 .

[0071] The recovery liquid supply unit 58 supplies the recovery liquid to the back surface Wb of the substrate W. In detail, the recovery liquid supply unit 58 supplies the recovery liquid to the back surface Wb of the substrate W via the pipe 52c and the pipe 52.

[0072] The recovery liquid supply unit 58 includes a pipe 58a and a valve 58b. The recovery liquid is supplied to the pipe 58a from a recovery liquid storage tank 210, which serves as a supply source. The valve 58b opens and closes the flow path in the pipe 58a. The valve 58b adjusts the opening of the pipe 58a to regulate the flow rate of the recovery liquid flowing through the pipe 58a. The valve 58b may have a configuration similar to that of the valve 54b.

[0073] The recovery liquid that flows through the pipe 58a to the pipe 52c and the pipe 52 is discharged onto the rear surface Wb of the substrate W from the nozzle 51.

[0074] The cup 80 moves up and down in the vertical direction. The cup 80 rises to an upper position located to the side of the substrate W. The cup 80 also descends to a lower position located diagonally below the substrate W. In FIG. 2, the cup 80 is located at the lower position. When any one of the chemical liquid, the rinse liquid, and the recovery liquid is supplied to the substrate W, the cup 80 rises to a position to the side of the substrate W.

[0075] The cup 80 collects the processing liquid splashed around the substrate W due to the rotation of the substrate W. For example, when the chemical liquid supply unit 30 supplies the chemical liquid to the rotating substrate W, the chemical liquid splashes laterally from the substrate W. In this case, the cup 80, at its upper position, collects the chemical liquid splashed laterally from the substrate W. Furthermore, when the rinsing liquid supply unit 40 supplies the rinsing liquid to the rotating substrate W, the cup 80, at its upper position, collects the rinsing liquid splashed laterally from the substrate W. Similarly, when the back surface processing liquid supply unit 50 supplies the processing liquid to the rotating substrate W, the cup 80, at its upper position, collects the processing liquid splashed laterally from the substrate W.

[0076] In this way, while any one of the chemical liquid supply unit 30, the rinse liquid supply unit 40, and the back surface processing liquid supply unit 50 supplies any one of the chemical liquid, the rinse liquid, and the processing liquid to the substrate W, the cup 80, at the upper position, collects any one of the chemical liquid, the rinse liquid, and the processing liquid that splashes sideways from the substrate W. Furthermore, when the period during which any one of the chemical liquid supply unit 30, the rinse liquid supply unit 40, and the back surface processing liquid supply unit 50 supplies any one of the chemical liquid, the rinse liquid, and the processing liquid to the substrate W ends, the cup 80 descends to a lower position located diagonally below the substrate W.

[0077] Specifically, when the chemical liquid supply unit 30 and / or the chemical liquid supply unit 54 supplies a chemical liquid to the substrate W while the substrate holding unit 20 is holding and rotating the substrate W, the rotation of the substrate W causes the chemical liquid supplied to the substrate W to splash around the substrate W. When the chemical liquid supply unit 30 and / or the chemical liquid supply unit 54 supplies the chemical liquid to the substrate W, the cup 80 is positioned above the substrate W to cover the side of the substrate W, and the cup 80 collects the chemical liquid that splashes around the substrate W due to the rotation of the substrate W. Similarly, when the rinse liquid supply unit 40 and / or the rinse liquid supply unit 56 supplies a rinse liquid to the substrate W while the substrate holding unit 20 is holding and rotating the substrate W, the rotation of the substrate W causes the rinse liquid supplied to the substrate W to splash around the substrate W. The cup 80 is positioned at an upper position covering the side of the substrate W when the rinse liquid supply unit 40 and / or the rinse liquid supply unit 56 supplies rinse liquid to the substrate W, and the cup 80 collects rinse liquid that splashes around the substrate W as the substrate W rotates.

[0078] Furthermore, when the recovering liquid supply unit 58 supplies the recovering liquid to the substrate W while the substrate holder 20 is holding and rotating the substrate W, the rotation of the substrate W causes the recovering liquid supplied to the substrate W to splash around the periphery of the substrate W. When the recovering liquid supply unit 58 supplies the recovering liquid to the substrate W, the cup 80 is located at an upper position covering the side of the substrate W, and collects the recovering liquid that splashes around the periphery of the substrate W due to the rotation of the substrate W. In this way, the cup 80 collects any of the chemical liquid, the rinse liquid, and the recovering liquid that splashes around the periphery of the substrate W due to the rotation of the substrate W.

[0079] The drainage mechanism 90 discharges the chemical liquid, rinse liquid, and / or recovery liquid collected in the cup 80. Pipes are connected to the cup 80, and the chemical liquid, rinse liquid, and / or recovery liquid collected in the cup 80 flow through the pipes and are discharged to the outside. The drainage mechanism 90 may be connected to a recovery liquid storage tank 210.

[0080] The recovered liquid storage tank 210 stores recovered liquid. The recovered liquid storage tank 210 may store liquid that has been used once as recovered liquid. For example, the recovered liquid storage tank 210 may store processing liquid in the adjustment process as recovered liquid without discarding it. In one example, the recovered liquid storage tank 210 may not recover liquid when the particle concentration in the liquid is high, and may recover liquid when the particle concentration in the liquid becomes low. Alternatively, the recovered liquid storage tank 210 may store cleaning liquid used to clean a component as recovered liquid without discarding it.

[0081] The drainage mechanism 90 discharges the chemical liquid, rinse liquid, and processing liquid collected in the cup 80 to the outside of the chamber 11. The drainage mechanism 90 has a pipe 91 for discharging the chemical liquid, rinse liquid, and processing liquid collected in the cup 80. One end of the pipe 91 is connected to the bottom of the cup 80.

[0082] The drainage mechanism 90 further includes a pipe 92a and a valve 92b. The pipe 92a is connected to the pipe 91. The chemical liquid and rinse liquid collected in the cup 80 flow from the pipe 91 into the pipe 92a. The valve 92b opens and closes the flow path in the pipe 92a. The valve 92b adjusts the opening of the pipe 92a to regulate the flow rate of the liquid flowing through the pipe 92a. Specifically, the valve 92b includes a valve body (not shown) with a valve seat provided therein, a valve element that opens and closes the valve seat, and an actuator (not shown) that moves the valve element between an open position and a closed position.

[0083] As described above, the control device 101 includes the control unit 102 and the memory unit 104. The control unit 102 controls the substrate holder 20, the chemical solution supply unit 30, and / or the cup 80. In one example, the control unit 102 controls the electric motor 24, the valves 36, 46, 54b, 56b, 58b, 92b, and / or the cup 80.

[0084] The substrate processing apparatus 100 of this embodiment is suitable for use in the manufacture of semiconductor devices having semiconductors. Typically, in semiconductor devices, conductive layers and insulating layers are stacked on a substrate. The substrate processing apparatus 100 is suitable for use in cleaning and / or processing (e.g., etching, changing characteristics, etc.) the conductive layers and / or insulating layers during the manufacture of semiconductor devices.

[0085] 2, the chemical liquid supply unit 30 is capable of supplying one type of processing liquid. However, this embodiment is not limited to this. The chemical liquid supply unit 30 may supply multiple types of chemical liquid. For example, the chemical liquid supply unit 30 may be capable of sequentially supplying multiple types of chemical liquids for different purposes to the substrate W. Alternatively, the chemical liquid supply unit 30 may be capable of simultaneously supplying multiple types of chemical liquids for different purposes to the substrate W.

[0086] Next, a substrate processing apparatus 100 according to this embodiment will be described with reference to Figures 1 to 3. Figure 3 is a block diagram of the substrate processing apparatus 100.

[0087] 3 , the control device 101 controls various operations of the substrate processing apparatus 100. The control device 101 controls the indexer robot IR, the center robot CR, the substrate holding unit 20, the chemical liquid supply unit 30, the rinse liquid supply unit 40, the back surface processing liquid supply unit 50, the cup 80, and the drainage mechanism 90. Specifically, the control device 101 controls the indexer robot IR, the center robot CR, the substrate holding unit 20, the chemical liquid supply unit 30, the rinse liquid supply unit 40, the back surface processing liquid supply unit 50, the cup 80, and the drainage mechanism 90 by transmitting control signals to the indexer robot IR, the center robot CR, the substrate holding unit 20, the chemical liquid supply unit 30, the rinse liquid supply unit 40, the back surface processing liquid supply unit 50, the cup 80, and the drainage mechanism 90.

[0088] The memory unit 104 also stores computer programs and data. The data includes recipe data. The recipe data includes information indicating a plurality of recipes. Each of the plurality of recipes specifies the processing content, processing procedure, and substrate processing conditions for the substrate W. The control unit 102 executes the computer programs stored in the memory unit 104 to perform substrate processing operations.

[0089] The control unit 102 controls the indexer robot IR to transfer the substrate W by the indexer robot IR.

[0090] The control unit 102 controls the center robot CR to transfer the substrate W by the center robot CR. For example, the center robot CR receives an unprocessed substrate W and carries the substrate W into one of the plurality of chambers 11. The center robot CR also receives a processed substrate W from the chamber 11 and carries the substrate W out.

[0091] The control unit 102 controls the substrate holding unit 20 to start rotation of the substrate W, change the rotation speed, and stop rotation of the substrate W. For example, the control unit 102 can control the substrate holding unit 20 to change the rotation speed of the substrate holding unit 20. Specifically, the control unit 102 can change the rotation speed of the substrate W by changing the rotation speed of the electric motor 24 of the substrate holding unit 20.

[0092] The control unit 102 controls the valve 36 of the chemical solution supply unit 30 to switch the state of the valve 36 between an open state and a closed state. Specifically, the control unit 102 controls the valve 36 of the chemical solution supply unit 30 to open the valve 36, thereby allowing the chemical solution flowing through the pipe 32 toward the nozzle 34 to pass. The control unit 102 also controls the valve 36 of the chemical solution supply unit 30 to close the valve 36, thereby stopping the supply of the chemical solution flowing through the pipe 32 toward the nozzle 34.

[0093] The control unit 102 controls the valve 46 of the rinse liquid supply unit 40 to switch the state of the valve 46 between an open state and a closed state. Specifically, the control unit 102 controls the valve 46 of the rinse liquid supply unit 40 to open the valve 46, thereby allowing the rinse liquid flowing through the pipe 42 toward the nozzle 44. The control unit 102 also controls the valve 46 of the rinse liquid supply unit 40 to close the valve 46, thereby stopping the supply of the rinse liquid flowing through the pipe 42 toward the nozzle 44.

[0094] The control unit 102 controls the valve 54b of the chemical solution supply unit 54 to switch the state of the valve 54b between an open state and a closed state. Specifically, the control unit 102 controls the valve 54b of the chemical solution supply unit 54 to open the valve 54b, thereby allowing the chemical solution flowing through the pipe 54a, the pipe 52c, and the pipe 52 toward the nozzle 51. The control unit 102 also controls the valve 54b of the chemical solution supply unit 54 to close the valve 54b, thereby stopping the supply of the chemical solution flowing through the pipe 54a toward the nozzle 51.

[0095] The control unit 102 controls the valve 56b of the rinse liquid supply unit 56 to switch the state of the valve 56b between an open state and a closed state. Specifically, the control unit 102 controls the valve 56b of the rinse liquid supply unit 56 to open the valve 56b, thereby allowing the rinse liquid flowing through the pipe 56a, the pipe 52c, and the pipe 52 toward the nozzle 51. The control unit 102 also controls the valve 56b of the rinse liquid supply unit 56 to close the valve 56b, thereby stopping the supply of the rinse liquid flowing through the pipe 56a toward the nozzle 51.

[0096] The control unit 102 controls the valve 58b of the recovering liquid supply unit 58 to switch the state of the valve 58b between an open state and a closed state. Specifically, the control unit 102 controls the valve 58b of the recovering liquid supply unit 58 to open the valve 58b, thereby allowing the recovering liquid flowing through the pipe 58a, the pipe 52c, and the pipe 52 toward the nozzle 51. The control unit 102 also controls the valve 58b of the recovering liquid supply unit 58 to close the valve 58b, thereby stopping the supply of the recovering liquid flowing through the pipe 58a toward the nozzle 51.

[0097] The control unit 102 may control the cup 80 to move the cup 80 relative to the substrate W. Specifically, the control unit 102 moves the cup 80 to a raised position on the side of the substrate W during a period in which at least one of the chemical liquid supply unit 30, the rinse liquid supply unit 40, the chemical liquid supply unit 54, the rinse liquid supply unit 56, and the recovery liquid supply unit 58 supplies any of the chemical liquid, the rinse liquid, and the recovery liquid to the substrate W. Furthermore, the control unit 102 lowers the cup 80 vertically downward from the side of the substrate W after the period in which at least one of the chemical liquid supply unit 30, the rinse liquid supply unit 40, the chemical liquid supply unit 54, the rinse liquid supply unit 56, and the recovery liquid supply unit 58 supplies any of the chemical liquid, the rinse liquid, and the recovery liquid to the substrate W has ended.

[0098] The control unit 102 controls the valve 92b of the drainage mechanism 90 to switch the state of the valve 92b between an open state and a closed state. Specifically, the control unit 102 controls the valve 92b to open the valve 92b, thereby allowing the chemical liquid and rinse liquid flowing through the pipes 91 and 92a to pass. The control unit 102 also controls the valve 92b to close the valve 92b, thereby stopping the passage of the chemical liquid and rinse liquid flowing through the pipes 91 and 92a.

[0099] The control unit 102 may determine whether or not to recover the liquid as the recovery liquid in the recovery liquid storage tank 210. For example, the control unit 102 may determine whether or not to recover the liquid as the recovery liquid in the recovery liquid storage tank 210 based on the measurement results of various measuring members.

[0100] The substrate processing apparatus 100 of this embodiment is preferably used for forming semiconductor elements. For example, the substrate processing apparatus 100 is preferably used for processing a substrate W used as a semiconductor element having a stacked structure. The semiconductor element is a so-called 3D structure memory (storage device). As an example, the substrate W is preferably used as a NAND flash memory.

[0101] Next, the substrate processing apparatus 100 of this embodiment will be described with reference to Figures 1 to 4. Figure 4 is a flow chart of the substrate processing method of this embodiment.

[0102] 4, in step S102, the substrate W is loaded into the chamber 11. Under the control of the control unit 102, the center robot CR loads the substrate W into the chamber 11. Here, the front surface Wa of the substrate W faces vertically upward, and the back surface Wb of the substrate W faces vertically downward.

[0103] In step S104, the substrate holder 20 holds the loaded substrate W. Under the control of the controller 102, the substrate holder 20 holds the substrate W.

[0104] In step S106, rotation of the substrate W is started and the chemical liquid is supplied to the substrate W. Under the control of the control unit 102, the substrate holding unit 20 starts rotating the substrate W while holding the substrate W. Also, under the control of the control unit 102, the chemical liquid supply unit 30 supplies the chemical liquid from the nozzle 34 to the front surface Wa of the substrate W.

[0105] While the chemical liquid is being supplied from the nozzle 34 to the front surface Wa of the substrate W, the back surface processing liquid supply unit 50 may supply the chemical liquid from the nozzle 51 to the back surface Wb of the substrate W under the control of the control unit 102.

[0106] Under the control of the control unit 102, the cup 80 is positioned at an upper position covering the side of the substrate W. When the supply of the chemical liquid from the nozzle 34 to the front surface Wa of the substrate W starts, the cup 80 may be raised so as to be positioned at the side of the substrate W. Note that the cup 80 may be raised in accordance with the timing when the supply of the processing liquid to the substrate W starts.

[0107] Valve 92b is in an open state under the control of the control unit 102. In this case, cup 80 collects the chemical liquid splashed from the substrate W, and the chemical liquid collected in cup 80 flows through pipe 92a with valve 92b open and is discharged.

[0108] In step S108, a rinse liquid is supplied to the substrate W while the substrate W is rotating. Under the control of the control unit 102, the substrate holding unit 20 continues to rotate the substrate W while holding the substrate W. Also, under the control of the control unit 102, the rinse liquid supply unit 40 supplies the rinse liquid from the nozzle 44 to the front surface Wa of the substrate W.

[0109] While the rinsing liquid is being supplied from the nozzle 44 to the front surface Wa of the substrate W, the back surface processing liquid supply unit 50 may supply the rinsing liquid from the nozzle 51 to the back surface Wb of the substrate W under the control of the control unit 102.

[0110] Under the control of the control unit 102, the cup 80 remains in an upper position covering the side of the substrate W. Under the control of the control unit 102, the valve 92b is in an open state. In this case, the cup 80 collects the rinse liquid splashed from the substrate W, and the rinse liquid collected in the cup 80 flows through the pipe 91 and the pipe 92a, whose valve 92b is open, before being discharged.

[0111] In step S110, the recovery liquid is supplied to the substrate W while the substrate W is rotating. Under the control of the control unit 102, the substrate holding unit 20 continues to rotate the substrate W while holding the substrate W. Under the control of the control unit 102, the rinse liquid supply unit 40 continues to supply the rinse liquid from the nozzle 44 to the front surface Wa of the substrate W. Under the control of the control unit 102, the back surface processing liquid supply unit 50 supplies the recovery liquid from the nozzle 51 to the back surface Wb of the substrate W.

[0112] Valve 92b is in an open state under the control of the control unit 102. In this case, the cup 80 collects the rinse liquid and recovery liquid splashed from the substrate W, and the rinse liquid and recovery liquid collected in the cup 80 flow through the pipe 91 and the pipe 92a with the valve 92b open, and are then discharged.

[0113] In step S112, the substrate W is dried. At this time, the supply of the rinsing liquid and the recovery liquid is stopped, and the rotation speed of the substrate W is increased. Under the control of the control unit 102, the chemical liquid supply unit 30 stops the supply of the rinsing liquid from the nozzle 34 to the front surface Wa of the substrate W. Also, under the control of the control unit 102, the supply of the recovery liquid from the nozzle 51 to the back surface Wb of the substrate W is stopped. Furthermore, under the control of the control unit 102, the substrate holder 20 increases the rotation speed of the substrate W.

[0114] Also, under the control of the control unit 102, the cup 80 remains in an upper position covering the side of the substrate W. Under the control of the control unit 102, the valve 92b remains closed. In this case, the cup 80 collects the rinsing liquid and recovery liquid splashed from the substrate W, and the rinsing liquid and recovery liquid collected in the cup 80 flow through the piping 91 and the piping 92a, whose valve 92b is open, before being discharged. Thereafter, under the control of the control unit 102, the substrate holder 20 stops the rotation of the substrate W.

[0115] In step S114, the substrate W is unloaded from the substrate processing unit 10. Under the control of the control unit 102, the substrate holder 20 releases the substrate W, and the center robot CR removes the substrate W from the chamber 11. Thereafter, the substrate W is unloaded to the outside of the substrate processing apparatus 100 via the indexer robot IR.

[0116] In this embodiment, the front surface Wa of the substrate W is treated with the chemical liquid as described above, and then treated with the rinse liquid. According to this embodiment, the rinse liquid supply unit 40 supplies the recovery liquid to the back surface Wb of the substrate W during at least a part of the period in which the rinse liquid is supplied to the front surface Wa of the substrate W. Therefore, the substrate processing apparatus 100 of this embodiment can reduce the amount of new processing liquid used.

[0117] Furthermore, in this embodiment, during the period in which the rinse liquid is supplied to the front surface Wa of the substrate W, after a predetermined time has elapsed, the recovery liquid is supplied to the back surface Wb of the substrate W. As a result, at the start of the rinse process, the rinse liquid containing relatively few impurities is also supplied to the back surface Wb of the substrate W, allowing the substrate W to be rinsed more appropriately.

[0118] Next, the substrate processing apparatus 100 of this embodiment will be described with reference to Figures 1 to 5. Figures 5(a) to 5(c) are schematic diagrams showing the flow of the substrate processing apparatus 100 of this embodiment.

[0119] As shown in FIG. 5(a), a chemical liquid is supplied to the front surface Wa and back surface Wb of the substrate W, and the front surface Wa and back surface Wb of the substrate W are treated with the chemical liquid. FIG. 5(a) is an example of step S106 in FIG. 4. The chemical liquid supply unit 30 supplies the chemical liquid to the front surface Wa of the rotating substrate W. The back surface processing liquid supply unit 50 supplies the chemical liquid to the back surface Wb of the rotating substrate W. Here, the cup 80 is located in an upper position. Therefore, the cup 80 faces the side of the substrate W. The cup 80 collects the chemical liquid that splashes as the substrate W rotates.

[0120] Valve 92b is open in drainage mechanism 90. Therefore, the chemical liquid collected in cup 80 flows through pipe 91 and pipe 92a and is discharged.

[0121] As shown in Fig. 5(b), a rinse liquid is supplied to the front surface Wa and back surface Wb of the substrate W, and the front surface Wa and back surface Wb of the substrate W are treated with the rinse liquid. Fig. 5(b) is an example of step S108 in Fig. 4. The rinse liquid supply unit 40 supplies the rinse liquid to the front surface Wa of the rotating substrate W. The back surface processing liquid supply unit 50 supplies the rinse liquid to the back surface Wb of the rotating substrate W. The cup 80 collects the rinse liquid that splashes as the substrate W rotates.

[0122] In the drainage mechanism 90, the valve 92b remains open, so that the rinse liquid collected in the cup 80 flows through the pipe 91 and the pipe 92a and is discharged.

[0123] As shown in FIG. 5(c), a rinse liquid is supplied to the front surface Wa of the substrate W to process the front surface Wa of the substrate W with the rinse liquid, and a recovery liquid is supplied to the back surface Wb of the substrate W to process the back surface Wb of the substrate W with the recovery liquid. FIG. 5(c) is an example of step S110 in FIG. 4. For example, the rinse liquid supply unit 40 continues to supply the rinse liquid to the front surface Wa of the rotating substrate W. The back surface processing liquid supply unit 50 supplies the recovery liquid to the back surface Wb of the rotating substrate W. The cup 80 collects the rinse liquid that splashes as the substrate W rotates, and also collects the recovery liquid that splashes as the substrate W rotates.

[0124] In the drainage mechanism 90, the valve 92b remains open, so that the rinse liquid and recovery liquid collected in the cup 80 flow through the pipe 91 and the pipe 92a and are discharged.

[0125] Thereafter, the rinse liquid supply unit 40 stops supplying the rinse liquid, and the back surface processing liquid supply unit 50 stops supplying the recovery liquid. At this time, the substrate holding unit 20 may increase the rotation speed of the substrate W to dry the substrate W. Thereafter, the substrate holding unit 20 stops rotating the substrate W, and the substrate W is unloaded from the chamber 11.

[0126] According to this embodiment, the front surface Wa of the substrate W is treated with the chemical liquid as described above, and then treated with the rinse liquid. According to this embodiment, the rinse liquid supply unit 40 supplies the recovery liquid to the back surface Wb of the substrate W during at least a part of the period in which the rinse liquid is supplied to the front surface Wa of the substrate W. Therefore, the substrate processing apparatus 100 of this embodiment can reduce the amount of new processing liquid used.

[0127] The recovery liquid stored in the recovery liquid reservoir 210 is recovered as follows.

[0128] Next, the substrate processing apparatus 100 of this embodiment will be described with reference to Figures 1 to 6. Figure 6 is a schematic plan view of the substrate processing apparatus 100 of this embodiment. The substrate processing apparatus 100 of Figure 6 has the same configuration as the substrate processing apparatus 100 shown in Figure 1, except that the processing liquid cabinet 110 further includes a high-temperature liquid cabinet 110D, and therefore, duplicated descriptions will be omitted to avoid redundancy.

[0129] 6, in the substrate processing apparatus 100, the processing liquid cabinet 110 further includes a high-temperature liquid cabinet 110D. For example, the high-temperature liquid cabinet 110D prepares a high-temperature liquid. For example, the processing liquid is heated in the high-temperature liquid cabinet 110D. The high-temperature liquid cabinet 110D also supplies the high-temperature liquid to the processing liquid box 120.

[0130] The high-temperature liquid cabinet 110D heats a liquid to prepare a high-temperature liquid. The high-temperature liquid may include any of deionized water (DIW), carbonated water, electrolytic ionized water, ozone water, ammonia water, diluted hydrochloric acid water (e.g., about 10 ppm to 100 ppm), and reduced water (hydrogen water). In one example, the high-temperature liquid is 20°C or higher. For example, the high-temperature liquid may be 30°C or higher and 100°C or lower.

[0131] The high-temperature liquid cabinet 110D may prepare a high-temperature liquid by heating a rinsing liquid or a cleaning liquid. For example, the high-temperature liquid may be used as a rinsing liquid for cleaning a substrate W that has been treated with a chemical liquid. Alternatively, the high-temperature liquid may be used as a chemical liquid or one of the components of the chemical liquid.

[0132] For example, the hot liquid cabinet 110D is disposed adjacent to the recovery liquid cabinet 110C. For example, the hot liquid cabinet 110D may be retrofitted to an existing processing liquid cabinet 110.

[0133] Next, a substrate processing apparatus 100 according to this embodiment will be described with reference to Figures 1 to 7. Figure 7 is a schematic diagram of the substrate processing apparatus 100 according to this embodiment. The substrate processing apparatus 100 in Figure 7 has the same configuration as the substrate processing apparatus 100 shown in Figure 2, except that high-temperature liquid and recovery liquid are supplied from a high-temperature liquid cabinet 110D, and therefore, redundant description will be omitted to avoid redundancy.

[0134] 7, the substrate processing apparatus 100 includes a high-temperature liquid cabinet 110D. The high-temperature liquid cabinet 110D prepares a high-temperature liquid by heating a liquid to a high temperature. The high-temperature liquid is used as at least a part of a chemical liquid and / or a rinse liquid for processing the substrate W in the substrate processing unit 10. The high-temperature liquid being prepared may be recovered as a recovered liquid.

[0135] The high-temperature liquid cabinet 110D has a storage tank 220, a pipe 221, a pipe 222, a pipe 223, a heater 224, a temperature measurement unit 225, a valve 226, and a valve 227. The storage tank 220 stores a liquid before being heated to a high-temperature liquid. The pipe 221 connects the storage tank 220, the pipe 222, and the pipe 223. The pipes 221, 222, and 223 are connected at a connection point 221c. One end of the pipe 221 is connected to the storage tank 220, and the other end of the pipe 221 is connected to the connection point 221c.

[0136] A heater 224 is attached to the pipe 221. The heater 224 heats the liquid flowing through the pipe 221. The heater 224 adjusts the liquid flowing through the pipe 221 to a high-temperature liquid.

[0137] A temperature measuring unit 225 is attached to the pipe 221. The temperature measuring unit 225 measures the temperature of the high-temperature liquid flowing through the pipe 221. Typically, the temperature measuring unit 225 is located downstream of the heater 224 on the pipe 221.

[0138] The pipe 222 connects the substrate processing unit 10 to the connection point 221c via the processing liquid box 120. Therefore, the high-temperature liquid flowing through the pipe 222 is used as the processing liquid for the substrate processing unit 10. A valve 226 is attached to the pipe 222. The valve 226 adjusts the opening of the pipe 222 to adjust the flow rate of the high-temperature liquid flowing through the pipe 222.

[0139] The pipe 223 also connects the recovered liquid storage tank 210 and the connection point 221c. Therefore, the high-temperature liquid flowing through the pipe 223 is collected as the recovered liquid storage tank 210. A valve 227 is attached to the pipe 223. The valve 227 adjusts the opening of the pipe 223 to adjust the flow rate of the high-temperature liquid flowing through the pipe 223.

[0140] When the temperature of the high-temperature liquid measured by the temperature measuring unit 225 reaches a predetermined temperature, the control unit 102 opens the valve 226 and closes the valve 227, thereby causing the high-temperature liquid to flow into the substrate processing unit 10 via the pipe 222. On the other hand, when the temperature of the high-temperature liquid measured by the temperature measuring unit 225 does not reach the predetermined temperature, the control unit 102 closes the valve 226 and opens the valve 227, thereby causing the high-temperature liquid to flow into the collected liquid storage tank 210 via the pipe 223.

[0141] In this way, the recovered liquid storage tank 210 recovers the high-temperature liquid prepared in the high-temperature liquid cabinet 110D as the recovered liquid until the high-temperature liquid reaches a predetermined temperature. The recovered liquid in the recovered liquid storage tank 210 is supplied to the back surface Wb of the substrate W. Therefore, the substrate processing apparatus 100 of this embodiment can reduce the amount of new processing liquid used.

[0142] Next, the substrate processing apparatus 100 of this embodiment will be described with reference to Figures 1 to 8. Figure 8 is a flow chart of the substrate processing method of this embodiment.

[0143] 8, in step S201, heating is started by the heater 224. The control unit 102 drives a pump (not shown) so that the high-temperature liquid heated by the heater 224 flows through the pipe 221.

[0144] In step S202, the temperature is measured. The control unit 102 causes the temperature measurement unit 225 to measure the temperature of the high-temperature liquid flowing through the pipe 221.

[0145] In step S203, it is determined whether the measured temperature value is equal to or greater than a threshold value. The control unit 102 compares the measured temperature value of the temperature measurement unit 225 with the threshold value to determine whether the measured temperature value is equal to or greater than the threshold value.

[0146] If it is determined that the measured temperature value is equal to or greater than the threshold value (Yes in step S203), the process proceeds to step S204. On the other hand, if it is determined that the measured temperature value is less than the threshold value (No in step S203), the process proceeds to step S211 again.

[0147] In step S204, the high-temperature liquid is supplied to the substrate processing unit 10. The control unit 102 opens the valve 226 and closes the valve 227, whereby the high-temperature liquid is supplied to the substrate processing unit 10 through the pipe 222.

[0148] In step S205, it is determined whether or not to stop the supply of high temperature liquid. For example, the control unit 102 determines whether or not more high temperature liquid is needed to process the substrate W.

[0149] If it is determined not to stop the supply of high temperature liquid (No in step S205), the process returns to step S202. On the other hand, if it is determined to stop the supply of high temperature liquid (Yes in step S205), the process proceeds to step S206.

[0150] In step S206, heating is stopped. The control unit 102 stops heating by the heater 224 and stops driving the pump. Then, the process ends.

[0151] In step S211, the high-temperature liquid is supplied to the recovered liquid storage tank 210. The control unit 102 closes the valve 226 and opens the valve 227, whereby the high-temperature liquid is recovered into the recovered liquid storage tank 210 via the pipe 223.

[0152] In step S212, it is determined whether a predetermined time has elapsed since the supply of high-temperature liquid started to the recovered liquid storage tank 210. For example, the control unit 102 measures the time that has elapsed since the supply of high-temperature liquid started, and determines whether the elapsed time is equal to or greater than a threshold value.

[0153] If it is determined that the predetermined time has not elapsed (No in step S212), the process returns to step S211, and this determination is repeated until the predetermined time has elapsed. On the other hand, if it is determined that the predetermined time has elapsed (Yes in step S212), the process returns to step S202. Thereafter, the temperature is measured again in step S202, and the determination is repeated.

[0154] According to this embodiment, the control unit 102 determines whether or not to store the high-temperature liquid as the recovery liquid in the recovery liquid storage tank 210 based on the measurement result of the temperature measurement unit 225. At this time, the high-temperature liquid that has been heated by the heater 224 but whose temperature is below the threshold value is recovered as the recovery liquid in the recovery liquid storage tank 210. As described above, the recovery liquid in the recovery liquid storage tank 210 is supplied to the back surface Wb of the substrate W during at least a part of the period when the rinsing liquid supply unit 40 supplies the rinsing liquid to the front surface Wa of the substrate W. Therefore, the substrate processing apparatus 100 of this embodiment can reduce the amount of new processing liquid used.

[0155] 6 to 8, the processing liquid cabinet 110 includes the high-temperature liquid cabinet 110D that heats the liquid, but this embodiment is not limited to this. The processing liquid cabinet 110 may not include the high-temperature liquid cabinet 110D, and the rinse liquid may be heated in the rinse liquid cabinet 110B. In this case, the rinse liquid at a temperature below the threshold may be collected in the collected liquid storage tank 210. Similarly, the chemical liquid may be heated in the chemical liquid cabinet 110A. In this case, the chemical liquid at a temperature below the threshold may be collected in the collected liquid storage tank 210.

[0156] 6 to 8, whether or not to recover the liquid in the recovery liquid reservoir tank 210 is determined based on the temperature of the liquid, but this embodiment is not limited to this. Whether or not to recover the liquid in the recovery liquid reservoir tank 210 may also be determined based on the concentration of the liquid.

[0157] Next, a substrate processing apparatus 100 according to this embodiment will be described with reference to Figures 1 to 9. Figure 9 is a schematic plan view of the substrate processing apparatus 100 according to this embodiment. The substrate processing apparatus 100 in Figure 9 has the same configuration as the substrate processing apparatus 100 shown in Figure 1, except that the processing liquid cabinet 110 further includes an ozone liquid cabinet 110E, and therefore, to avoid redundancy, a duplicated description will be omitted.

[0158] 9, in the substrate processing apparatus 100, the processing liquid cabinet 110 further includes an ozone liquid cabinet 110E. The ozone liquid cabinet 110E prepares an ozone liquid. For example, in the ozone liquid cabinet 110E, ozone gas is generated and dissolved in a liquid. The ozone liquid cabinet 110E supplies the ozone liquid to the processing liquid box 120.

[0159] Here, the ozone liquid cabinet 110E is disposed adjacent to the recovery liquid cabinet 110C. For example, the ozone liquid cabinet 110E may be retrofitted to an existing treatment liquid cabinet 110.

[0160] Next, a substrate processing apparatus 100 according to this embodiment will be described with reference to Figures 1 to 10. Figure 10 is a schematic diagram of the substrate processing apparatus 100 according to this embodiment. The substrate processing apparatus 100 in Figure 10 has the same configuration as the substrate processing apparatus 100 shown in Figure 2, except that it further includes an ozone liquid cabinet 110E that supplies ozone liquid, and therefore, to avoid redundancy, a duplicated description will be omitted.

[0161] 10 , in the substrate processing apparatus 100, the processing liquid cabinet 110 further includes an ozone liquid cabinet 110E. For example, the ozone liquid cabinet 110E prepares an ozone liquid. For example, the ozone liquid cabinet 110E generates ozone gas and dissolves the ozone gas in a liquid to produce an ozone liquid. The ozone liquid cabinet 110E also supplies the ozone liquid to the processing liquid box 120.

[0162] The liquid in which ozone gas is dissolved may include any of deionized water (DIW), carbonated water, electrolytic ionized water, ozone water, ammonia water, diluted hydrochloric acid water (for example, about 10 ppm to 100 ppm), and reduced water (hydrogen water). For example, ozone water can be produced by dissolving ozone gas in deionized water.

[0163] The ozone liquid cabinet 110E may dissolve ozone gas in a rinse liquid or a cleaning liquid to generate an ozone liquid. For example, the ozone liquid may be used as a rinse liquid for cleaning the substrate W that has been treated with a chemical liquid. Alternatively, the ozone liquid may be used as a chemical liquid or as one of the components of the chemical liquid.

[0164] The ozone liquid cabinet 110E prepares an ozone liquid by dissolving the generated ozone gas in a liquid. The ozone liquid is used as at least a part of a chemical liquid and / or a rinse liquid for processing the substrate W in the substrate processing unit 10. The ozone liquid during the preparation process may be recovered as a recovered liquid.

[0165] The ozone liquid cabinet 110E includes an ozone gas generator 230s, an ozone gas dissolution tank 230t, a pipe 231, a pipe 232, a pipe 233, a pipe 234, a concentration measurement unit 235, a valve 236, a valve 237, a valve 238, and a valve 239. The ozone gas generator 230s generates ozone gas. The ozone gas generator 230s generates ozone gas from oxygen gas and carbon dioxide gas.

[0166] The ozone gas dissolution tank 230t dissolves the ozone gas generated in the ozone gas generator 230s into a liquid, thereby producing an ozone liquid.

[0167] Pipe 231 connects ozone gas dissolution tank 230t, pipe 232, and pipe 233. Pipe 231, pipe 232, and pipe 233 are connected at connection point 231c. One end of pipe 231 is connected to ozone gas dissolution tank 230t, and the other end of pipe 231 is connected to connection point 231c.

[0168] A concentration measuring unit 235 is attached to the pipe 231. The concentration measuring unit 235 measures the ozone concentration in the ozone liquid flowing through the pipe 231.

[0169] The pipe 232 connects the substrate processing unit 10 to the connection point 231c via the processing liquid box 120. Therefore, the ozone liquid flowing through the pipe 232 is used as the processing liquid for the substrate processing unit 10. Valves 236 and 237 are attached to the pipe 232. The valves 236 and 237 adjust the opening of the pipe 232 to adjust the flow rate of the ozone liquid flowing through the pipe 232.

[0170] The pipe 233 connects the collected liquid storage tank 210 and the connection point 231c. Therefore, the ozone liquid flowing through the pipe 233 is collected in the collected liquid storage tank 210. A valve 239 is attached to the pipe 233. The valve 239 adjusts the opening of the pipe 233 to adjust the flow rate of the ozone liquid flowing through the pipe 233.

[0171] Pipe 234 connects a position of pipe 232 between valve 236 and valve 237 to recovered liquid storage tank 210. Therefore, the ozone liquid flowing through pipe 232 and pipe 234 returns to ozone gas dissolution tank 230t, and the ozone liquid circulates. Valve 238 is attached to pipe 234. Valve 238 adjusts the opening of pipe 234 to adjust the flow rate of the ozone liquid flowing through pipe 234.

[0172] When the concentration of the ozone liquid measured by the concentration measuring unit 235 reaches a predetermined concentration, the control unit 102 opens valves 236 and 237 and closes valves 238 and 239, so that the ozone liquid flows through the pipe 232 and is supplied to the substrate processing unit 10. When the concentration of the ozone liquid measured by the concentration measuring unit 235 is in the intermediate concentration range, the control unit 102 opens valves 236 and 238 and closes valves 237 and 239, so that the ozone liquid flows through the pipe 232 and the pipe 234 and flows into the ozone gas dissolution tank 230t for circulation. When the concentration of the ozone liquid measured by the concentration measuring unit 235 does not reach a predetermined concentration, the control unit 102 closes valve 236 and opens valve 239, so that the ozone liquid flows through the pipe 233 and is recovered in the recovered liquid storage tank 210.

[0173] In this way, the ozone liquid prepared in the ozone liquid cabinet 110E is collected as a collected liquid in the collected liquid storage tank 210 until the intermediate concentration is reached at which the circulation of the ozone liquid starts. As described above, the collected liquid collected in the collected liquid storage tank 210 is supplied to the back surface Wb of the substrate W. Therefore, the substrate processing apparatus 100 of this embodiment can reduce the amount of new processing liquid used.

[0174] Next, the substrate processing apparatus 100 of this embodiment will be described with reference to Figures 1 to 11. Figure 11 is a flow chart of the substrate processing method of this embodiment.

[0175] 11, in step S221, the generation of ozone liquid is started. The control unit 102 generates ozone liquid by dissolving ozone gas generated by the ozone gas generator 230s in a liquid in the ozone gas dissolution tank 230t, and drives a pump (not shown) so that the ozone liquid flows through the piping 221.

[0176] In step S222, the concentration of the ozone liquid is measured. The control unit 102 causes the concentration measuring unit 235 to measure the concentration of the ozone liquid flowing through the pipe 231.

[0177] In step S223, it is determined whether the measured value of the ozone concentration is equal to or greater than a first threshold value. The control unit 102 compares the measured value of the concentration measurement unit 235 with the first threshold value to determine whether the measured value is equal to or greater than the first threshold value.

[0178] If it is determined that the measured ozone concentration value is equal to or greater than the first threshold value (Yes in step S223), the process proceeds to step S224. On the other hand, if it is determined that the measured ozone concentration value is less than the first threshold value (No in step S223), the process proceeds to step S231.

[0179] In step S224, the ozone liquid is supplied to the substrate processing unit 10. The control unit 102 opens the valves 236 and 237 and closes the valves 238 and 239, so that the ozone liquid flows through the pipe 232 and is supplied to the substrate processing unit 10. Thereafter, the process proceeds to step S225.

[0180] In step S225, it is determined whether or not to stop the supply of ozone liquid. For example, the control unit 102 determines whether or not more ozone liquid is required to process the substrate W.

[0181] If it is determined not to stop the supply of ozone liquid (No in step S225), the process returns to step S222. On the other hand, if it is determined to stop the supply of ozone liquid (Yes in step S225), the process proceeds to step S226.

[0182] In step S226, the generation of ozone liquid is stopped. The control unit 102 stops the generation of ozone gas by the ozone gas generator 230s and stops driving the pump. Thereafter, the process ends.

[0183] In step S231, it is determined whether the measured value of the ozone concentration is equal to or greater than a second threshold. The control unit 102 compares the measured value of the concentration measurement unit 235 with the second threshold to determine whether the measured value is equal to or greater than the second threshold. Here, the second threshold is smaller than the first threshold.

[0184] If it is determined that the measured ozone concentration value is equal to or greater than the second threshold value (Yes in step S231), the process proceeds to step S232. On the other hand, if it is determined that the measured ozone concentration value is less than the second threshold value (No in step S231), the process proceeds to step S233.

[0185] In step S232, the ozone liquid is circulated. The control unit 102 opens valves 236 and 238 and closes valves 237 and 239, causing the ozone liquid to flow through pipes 232 and 234 and into the ozone gas dissolution tank 230t for circulation. Thereafter, the process returns to step S222.

[0186] In step S233, the ozone liquid is supplied to the collected liquid storage tank 210. The control unit 102 closes the valve 236 and opens the valve 239, whereby the ozone liquid flows through the pipe 233 and is collected in the collected liquid storage tank 210.

[0187] In step S234, it is determined whether a predetermined time has elapsed since the supply of the ozone liquid began to the collected liquid storage tank 210. For example, the control unit 102 measures the time that has elapsed since the supply of the ozone liquid began, and determines whether the elapsed time is equal to or greater than a threshold value.

[0188] If it is determined that the predetermined time has not elapsed (No in step S234), the process returns to step S233, and this determination is repeated until the predetermined time has elapsed. On the other hand, if it is determined that the predetermined time has elapsed (Yes in step S234), the process returns to step S222. Thereafter, the concentration of the ozone liquid is measured again in step S222, and the subsequent steps are repeated.

[0189] According to this embodiment, the ozone liquid whose concentration has reached an intermediate range of equal to or greater than the second threshold and less than the first threshold due to the generation of ozone gas in the ozone gas generator 230s is circulated. As a result, the ozone liquid, which has a relatively high concentration but is not sufficient, can be circulated while dissolving the ozone gas generated in the ozone gas generator 230s, thereby efficiently increasing the concentration of the ozone liquid.

[0190] Furthermore, according to this embodiment, the control unit 102 determines whether or not to store the ozone liquid as the recovered liquid in the recovered liquid storage tank 210 based on the measurement result of the concentration measurement unit 235. In this case, the ozone liquid whose concentration is less than the second threshold value despite the generation of ozone gas in the ozone gas generator 230s is collected as the recovered liquid in the recovered liquid storage tank 210. As described above, the recovered liquid in the recovered liquid storage tank 210 is supplied to the back surface Wb of the substrate W during at least a part of the period during which the rinsing liquid supply unit 40 supplies the rinsing liquid to the front surface Wa of the substrate W. Therefore, the substrate processing apparatus 100 of this embodiment can reduce the amount of new processing liquid used.

[0191] 10, the low-concentration ozone liquid is directly supplied to the collected liquid storage tank 210, but this embodiment is not limited to this. Before the ozone liquid is supplied to the collected liquid storage tank 210, ozone may be evaporated from the ozone liquid.

[0192] Next, the substrate processing apparatus 100 of this embodiment will be described with reference to Figures 1 to 12. Figure 12 is a schematic diagram of the substrate processing apparatus 100 of this embodiment. The substrate processing apparatus 100 of Figure 12 has the same configuration as the substrate processing apparatus 100 shown in Figure 10, except that the collecting liquid cabinet 110C has a heating tank 210h in addition to the collecting liquid storage tank 210, and therefore, duplicated descriptions will be omitted to avoid redundancy.

[0193] 12, the collecting liquid cabinet 110C has a heating tank 210h in addition to the collecting liquid reservoir tank 210. The heating tank 210h is connected to a pipe 233. The heating tank 210h is connected to the collecting liquid reservoir tank 210 via a pipe 210p.

[0194] The ozone liquid flowing through the pipe 233 is stored in the heating tank 210h. The heating tank 210h heats the ozone liquid that has flowed in through the pipe 233. By heating the ozone liquid with a relatively low concentration in the heating tank 210h, the ozone in the ozone liquid is evaporated, and the ozone concentration in the ozone liquid can be further reduced. Therefore, even if the recovery liquid stored in the recovery liquid storage tank 210 is supplied to the back surface Wb of the substrate W during at least a part of the period during which the rinsing liquid supply unit 40 supplies the rinsing liquid to the front surface Wa of the substrate W, fluctuations in the characteristics of the back surface Wb of the substrate W can be suppressed. Therefore, the substrate processing apparatus 100 of this embodiment can effectively reduce the amount of new processing liquid used.

[0195] 12, the ozone concentration of the ozone liquid is reduced by heating the ozone liquid, but the ozone concentration of the ozone liquid may also be reduced by chemically treating the ozone liquid. For example, an alkaline chemical solution may be added to the ozone water to neutralize the ozone in the ozone liquid.

[0196] 6 to 12, the liquid in the process of preparing the processing liquid to be supplied to the substrate processing unit 10 for processing the substrate W is collected in the collected liquid storage tank 210. However, this embodiment is not limited to this. Liquid other than that in the process of preparing the processing liquid may also be collected in the collected liquid storage tank 210.

[0197] Next, a substrate processing apparatus 100 according to this embodiment will be described with reference to Figures 1 to 13. Figure 13 is a schematic diagram of the substrate processing apparatus 100 according to this embodiment. The substrate processing apparatus 100 in Figure 13 has the same configuration as the substrate processing apparatus 100 shown in Figure 2, except that a cleaning liquid is supplied as a recovery liquid from a chemical liquid cabinet 110A to a recovery liquid storage tank 210, and therefore, redundant description will be omitted to avoid redundancy.

[0198] 13, in the substrate processing apparatus 100, a chemical solution and a cleaning solution are supplied to a chemical solution cabinet 110A. For example, the chemical solution cabinet 110A prepares a chemical solution. The chemical solution cabinet 110A supplies the chemical solution to a processing solution box 120. In FIG. 13, the chemical solution cabinet 110A is disposed adjacent to a collecting solution cabinet 110C.

[0199] The chemical solution cabinet 110A is cleaned periodically or as needed. When the chemical solution cabinet 110A is cleaned, a cleaning solution is supplied to the chemical solution cabinet 110A.

[0200] The cleaning liquid may include any of deionized water (DIW), carbonated water, electrolytic ionized water, ozone water, ammonia water, diluted hydrochloric acid water (for example, about 10 ppm to 100 ppm), and reduced water (hydrogen water).

[0201] Typically, the cleaning liquid supplied to the chemical solution cabinet 110A is discharged. However, the cleaning liquid supplied to the chemical solution cabinet 110A may be collected in the collected liquid reservoir 210.

[0202] The chemical liquid cabinet 110A has a chemical liquid storage tank 110h. The chemical liquid storage tank 110h can store a chemical liquid. When a substrate W is processed with a chemical liquid in the substrate processing unit 10, the chemical liquid stored in the chemical liquid storage tank 110h is supplied to the substrate processing unit 10. For example, the chemical liquid stored in the chemical liquid storage tank 110h may be supplied to process the front surface Wa of the substrate W. Alternatively, the chemical liquid stored in the chemical liquid storage tank 110h may be supplied to process the back surface Wb of the substrate W.

[0203] The chemical liquid cabinet 110A includes a chemical liquid storage tank 110h, a pipe 112a, a pipe 112b, a pipe 112c, a valve 112e, a valve 112f, a pipe 112p, and a valve 112q. The chemical liquid storage tank 110h stores the chemical liquid.

[0204] A chemical liquid is supplied to the chemical liquid storage tank 110h. The chemical liquid, the flow rate of which is controlled by a valve 110q, is supplied to the chemical liquid storage tank 110h via a pipe 110p. The chemical liquid is supplied to the pipe 110p from a supply source. The valve 110q opens and closes a flow path in the pipe 110p. The valve 110q adjusts the opening of the pipe 110p to adjust the flow rate of the chemical liquid flowing through the pipe 110p.

[0205] The chemical liquid storage tank 110h is cleaned with a cleaning liquid. When cleaning the chemical liquid storage tank 110h, the cleaning liquid is supplied to the chemical liquid storage tank 110h. The cleaning liquid, the flow rate of which is controlled by the valve 110t, is supplied to the chemical liquid storage tank 110h via the pipe 110s. The cleaning liquid is supplied to the pipe 110s from a supply source. The valve 110t opens and closes the flow path in the pipe 110s. The valve 110t adjusts the opening of the pipe 110s to adjust the flow rate of the cleaning liquid supplied to the pipe 110s.

[0206] Pipe 112a connects chemical liquid storage tank 110h with pipe 112b and pipe 112c. Pipe 112a, pipe 112b and pipe 112c are connected at connection point 112d. One end of pipe 112a is connected to chemical liquid storage tank 110h, and the other end of pipe 112a is connected to connection point 112d.

[0207] The pipe 112b connects the substrate processing unit 10 to the connection point 112d via the processing liquid box 120. Therefore, the chemical liquid flowing through the pipe 112b is used as the processing liquid for the substrate processing unit 10. A valve 112e is attached to the pipe 112b. The valve 112e adjusts the opening of the pipe 112b to adjust the flow rate of the chemical liquid flowing through the pipe 112b.

[0208] Before cleaning the chemical liquid storage tank 110h, the chemical liquid is discharged from the chemical liquid storage tank 110h. A pipe 112p is connected to the chemical liquid storage tank 110h. The chemical liquid discharged from the chemical liquid storage tank 110h flows through the pipe 112p. A valve 112q is attached to the pipe 112p. The valve 112q adjusts the opening of the pipe 112p to adjust the flow rate of the chemical liquid flowing through the pipe 112p.

[0209] When cleaning the chemical liquid storage tank 110h, a cleaning liquid is supplied to the chemical liquid storage tank 110h. The cleaning liquid supplied to the chemical liquid storage tank 110h flows through a pipe 112p and is then discharged. A valve 112q adjusts the opening of the pipe 112p to adjust the flow rate of the cleaning liquid flowing through the pipe 112p.

[0210] The pipe 112c connects the collected liquid reservoir tank 210 and the connection point 112d. The cleaning liquid flowing through the pipe 112c is collected in the collected liquid reservoir tank 210. A valve 112f is attached to the pipe 112c. The valve 112f adjusts the opening of the pipe 112c to adjust the flow rate of the cleaning liquid flowing through the pipe 112c.

[0211] Before cleaning the chemical liquid storage tank 110h, the control unit 102 opens the valve 112q and closes the valves 112e and 112f to discharge the chemical liquid stored in the chemical liquid storage tank 110h through the pipe 112c. Thereafter, the control unit 102 opens the valve 112q and keeps the valves 112e and 112f closed to supply the cleaning liquid to the chemical liquid storage tank 110h and clean the chemical liquid storage tank 110h.

[0212] Thereafter, the control unit 102 opens the valve 112f and closes the valves 112e and 112q, so that the cleaning liquid supplied to the chemical liquid storage tank 110h flows through the pipes 112a and 112c and is collected in the collected liquid storage tank 210.

[0213] In this way, at least a part of the cleaning liquid used to clean the chemical liquid storage tank 110h is collected as the recovery liquid in the recovery liquid storage tank 210. As described above, the recovery liquid collected in the recovery liquid storage tank 210 is supplied to the back surface Wb of the substrate W. Therefore, the substrate processing apparatus 100 of this embodiment can reduce the amount of new processing liquid used.

[0214] Next, the substrate processing apparatus 100 of this embodiment will be described with reference to Figures 1 to 14. Figure 14 is a flow chart of the substrate processing method of this embodiment.

[0215] 14, in step S302, the chemical is discharged from the chemical storage tank 110h. The control unit 102 opens the valve 112q, thereby discharging the chemical stored in the chemical storage tank 110h through the pipe 112p.

[0216] In step S304, the cleaning liquid is supplied to the chemical liquid reservoir 110h by the control unit 102 closing the valve 112q and opening the valve 110t, thereby supplying the cleaning liquid to the chemical liquid reservoir 110h.

[0217] In step S306, the cleaning liquid supplied to the chemical liquid reservoir 110h is discharged by opening the valve 112q by the control unit 102 while keeping the valve 110t open, thereby discharging the cleaning liquid supplied to the chemical liquid reservoir 110h.

[0218] In step S308, it is determined whether a predetermined time has elapsed since the start of supplying or discharging the cleaning liquid. The control unit 102 measures the time that has elapsed since the start of supplying or discharging the cleaning liquid, and determines whether the elapsed time exceeds a threshold value.

[0219] If the predetermined time has not elapsed (No in step S308), the process returns to step S308 and repeats this determination until the predetermined time has elapsed. On the other hand, if it is determined that the predetermined time has elapsed (Yes in step S308), the process proceeds to step S310.

[0220] In step S310, the cleaning liquid supplied to the chemical liquid storage tank 110h is caused to flow into the recovered liquid storage tank 210. The control unit 102 closes the valve 112q and opens the valve 112f, causing the cleaning liquid supplied to the chemical liquid storage tank 110h to flow into the recovered liquid storage tank 210 and be recovered as the recovered liquid.

[0221] In step S312, it is determined whether a predetermined time has elapsed since the start of recovery into the recovery liquid storage tank 210. The control unit 102 measures the time that has elapsed since the start of recovery into the recovery liquid storage tank 210, and determines whether the elapsed time exceeds a threshold value.

[0222] If it is determined that the predetermined time has not elapsed since the start of recovery into the recovered liquid reservoir tank 210 (No in step S312), the process repeats step S312 and repeats this determination until the predetermined time has elapsed. On the other hand, if it is determined that the predetermined time has elapsed since the start of recovery into the recovered liquid reservoir tank 210 (Yes in step S312), the process proceeds to step S314.

[0223] In step S314, the supply of cleaning liquid to the chemical liquid storage tank 110h is stopped, and the collection of cleaning liquid to the collected liquid storage tank 210 is stopped. The control unit 102 closes valves 110t and 112f, thereby stopping the cleaning liquid supplied to the chemical liquid storage tank 110h from flowing into the collected liquid storage tank 210 and being collected as the collected liquid. The control unit 102 also opens valve 112q once and then closes valve 112q, thereby discharging the cleaning liquid from the chemical liquid storage tank 110h and emptying the chemical liquid storage tank 110h.

[0224] In step S316, the supply of the chemical liquid to the chemical liquid reservoir 110h is started by the control unit 102. The valve 110q is opened to supply the chemical liquid to the chemical liquid reservoir 110h.

[0225] In step S318, it is determined whether a predetermined time has elapsed since the supply of the chemical liquid to the chemical liquid storage tank 110h started. The control unit 102 measures the time that has elapsed since the supply of the chemical liquid started, and determines whether the elapsed time exceeds a threshold value.

[0226] If the predetermined time has not elapsed since the start of supply of the chemical liquid (No in step S318), the process returns to step S318 and repeats this determination until the predetermined time has elapsed. On the other hand, if it is determined that the predetermined time has elapsed since the start of supply of the chemical liquid (Yes in step S318), the process proceeds to step S320.

[0227] In step S320, the supply of the chemical liquid to the chemical liquid reservoir 110h is stopped by closing the valve 110q by the control unit 102, thereby stopping the supply of the chemical liquid to the chemical liquid reservoir 110h.

[0228] In this manner, the chemical liquid stored in the chemical liquid storage tank 110h is discharged, the chemical liquid storage tank 110h is cleaned with the cleaning liquid, and then new chemical liquid can be stored in the chemical liquid storage tank 110h.

[0229] Thereafter, if necessary, the chemical liquid stored in the chemical liquid storage tank 110h is supplied to the front surface Wa of the substrate W. The control unit 102 opens the valves 110e and 36, thereby supplying the chemical liquid stored in the chemical liquid storage tank 110h to the front surface Wa of the substrate W.

[0230] According to this embodiment, the recovery liquid storage tank 210 recovers, as a recovery liquid, at least a part of the cleaning liquid used to clean the chemical liquid storage tank 110h. The recovery liquid recovered in the recovery liquid storage tank 210 is supplied to the back surface Wb of the substrate W. Therefore, the substrate processing apparatus 100 of this embodiment can reduce the amount of new processing liquid used.

[0231] In step S318, the supply of the chemical liquid to the chemical liquid storage tank 110h is controlled based on the time for which the valve 110t is opened, but this embodiment is not limited to this. The supply of the chemical liquid to the chemical liquid storage tank 110h may be controlled based on the detection result of a sensor in the chemical liquid storage tank 110h.

[0232] 6 to 14, a portion of the liquid used in the processing liquid cabinet 110 is recovered in the recovered liquid storage tank 210, but this embodiment is not limited to this. The recovered liquid storage tank 210 may also recover the cleaning liquid used to clean the inside of the chamber 11.

[0233] Next, the substrate processing apparatus 100 of this embodiment will be described with reference to Figures 1 to 15. Figure 15 is a schematic plan view of the substrate processing apparatus 100 of this embodiment. The substrate processing apparatus 100 of Figure 15 has the same configuration as the substrate processing apparatus 100 shown in Figure 1, except that the liquid flowing from the substrate processing unit 10 is supplied to the collecting liquid storage tank 210 of the collecting liquid cabinet 110C, and therefore, duplicated explanations will be omitted to avoid redundancy.

[0234] 15, the collecting liquid cabinet 110C supplies the collecting liquid to the processing liquid box 120, and also supplies the liquid flowing from the substrate processing unit 10 to the collecting liquid cabinet 110C. Specifically, the collecting liquid stored in the collecting liquid storage tank 210 is supplied to the substrate processing unit 10 via the processing liquid box 120. In addition, the liquid flowing from the substrate processing unit 10 is collected in the collecting liquid storage tank 210 as the collecting liquid.

[0235] Next, a substrate processing apparatus 100 according to this embodiment will be described with reference to Figures 1 to 16. Figure 16 is a schematic diagram of the substrate processing apparatus 100 according to this embodiment. The substrate processing apparatus 100 in Figure 16 further includes a pipe 11p arranged in the chamber 11, and has the same configuration as the substrate processing apparatus 100 shown in Figure 2, except that the liquid flowing from the substrate processing unit 10 is supplied to the collected liquid storage tank 210. Therefore, to avoid redundancy, a duplicated description will be omitted.

[0236] As shown in FIG. 16, in the substrate processing apparatus 100, a pipe 11p is arranged in the chamber 11. Here, the pipe 11p extends in the Y direction. The pipe 11p is located above the substrate holder 20. The pipe 11p has openings spaced apart at predetermined intervals. When a cleaning liquid is supplied to the pipe 11p, the cleaning liquid is discharged into the chamber 11 from the openings of the pipe 11p.

[0237] Typically, when the substrate holder 20 is not holding a substrate W, the cleaning liquid supplied to the pipe 11p is discharged from the opening of the pipe 11p into the chamber 11. This allows the inside of the chamber 11 to be cleaned. In this specification, the pipe 11p is an example of a chamber cleaning pipe.

[0238] The drainage mechanism 90 further includes a pipe 94a and a valve 94b in addition to the pipe 92a and the valve 92b.

[0239] The pipe 94a connects the pipe 91 and the collected liquid storage tank 210. The cleaning liquid collected in the cup 80 flows from the pipe 91 into the pipe 94a. The valve 94b opens and closes the flow path in the pipe 94a. The valve 94b adjusts the opening of the pipe 94a to adjust the flow rate of the cleaning liquid flowing through the pipe 94a. The valve 94b may have a configuration similar to that of the valve 92b.

[0240] When valve 94b is opened, the cleaning liquid collected in cup 80 flows through pipe 94a to collected liquid reservoir tank 210. In this specification, pipe 91 and pipe 94a connecting cup 80 and collected liquid reservoir tank 210 are examples of drainage pipes.

[0241] Next, the substrate processing apparatus 100 of this embodiment will be described with reference to Figures 1 to 17. Figure 17 is a flow diagram of the substrate processing apparatus 100 of this embodiment.

[0242] In the flow diagram of Fig. 17, steps S102 to S114 are the same as steps S102 to S114 described above with reference to Fig. 4, and therefore, to avoid redundancy, duplicated explanations will be omitted. After the substrate W is unloaded in step S114, the process proceeds to step S402.

[0243] In step S402, it is determined whether or not to clean the inside of the chamber 11. For example, the control unit 102 determines whether or not to clean the inside of the chamber 11 based on whether or not the number of substrates W processed since the previous chamber cleaning exceeds a threshold value. Alternatively, the control unit 102 determines whether or not to clean the inside of the chamber 11 based on whether or not the time elapsed since the previous chamber cleaning exceeds a threshold value. Alternatively, the control unit 102 may determine whether or not to clean the inside of the chamber 11 based on measurement results of the atmosphere, temperature, etc. inside the chamber 11.

[0244] If it is determined that the inside of the chamber 11 is to be cleaned (Yes in step S402), the process proceeds to step S404. On the other hand, if it is determined that the inside of the chamber 11 is not to be cleaned (No in step S402), the process proceeds to step S416.

[0245] In step S404, a cleaning liquid is supplied to the chamber 11. This cleans the inside of the chamber 11. The control unit 102 supplies the cleaning liquid to the pipe 11p in the chamber 11 to clean the inside of the chamber 11. The process proceeds to step S406.

[0246] In step S406, the cleaning liquid supplied to chamber 11 is discharged. For example, control unit 102 closes valve 94b and opens valve 92b to discharge the cleaning liquid used to clean chamber 11 through pipes 91 and 92a. The process proceeds to step S408.

[0247] In step S408, it is determined whether a predetermined time has elapsed since the supply of the cleaning liquid started. For example, the control unit 102 measures the time that has elapsed since the supply of the cleaning liquid started, and determines whether the elapsed time is equal to or greater than a threshold value.

[0248] If it is determined that the predetermined time has not elapsed (No in step S408), the process returns to step S408 and repeats this determination until the predetermined time has elapsed. On the other hand, if it is determined that the predetermined time has elapsed (Yes in step S408), the process proceeds to step S410.

[0249] In step S410, the cleaning liquid supplied to chamber 11 is recovered in collected liquid reservoir 210. For example, control unit 102 closes valve 92b while opening valve 94b, thereby recovering the cleaning liquid used to clean chamber 11 into collected liquid reservoir 210 via pipes 91 and 94a. Thereafter, the process proceeds to step S412.

[0250] In step S412, it is determined whether a predetermined time has elapsed since the start of collection of the cleaning liquid. For example, the control unit 102 measures the time that has elapsed since the start of collection of the cleaning liquid, and determines whether the elapsed time is equal to or greater than a threshold value.

[0251] If it is determined that the predetermined time has not elapsed (No in step S412), the process returns to step S412 and repeats this determination until the predetermined time has elapsed. On the other hand, if it is determined that the predetermined time has elapsed (Yes in step S412), the process proceeds to step S414.

[0252] In step S414, the supply of the cleaning liquid is stopped. The control unit 102 stops the supply of the cleaning liquid to the pipe 11p in the chamber 11, thereby completing the cleaning of the inside of the chamber 11. The control unit 102 also opens the valve 94b. The process proceeds to step S416.

[0253] In step S416, it is determined whether or not to process a new substrate W. For example, the control unit 102 does not end the substrate processing if an instruction for the next substrate W to be processed has been received, and ends the substrate processing if an instruction for the next substrate W to be processed has not been received.

[0254] If it is determined that a new substrate W is to be processed (No in step S416), the process returns to step S102 to process a new substrate W. On the other hand, if it is determined that a new substrate W is not to be processed (Yes in step S416), the process ends.

[0255] In this way, the recovery liquid storage tank 210 recovers at least a part of the cleaning liquid used to clean the chemical liquid storage tank 110h as the recovery liquid. As described above, the recovery liquid recovered in the recovery liquid storage tank 210 is supplied to the back surface Wb of the substrate W. Therefore, according to this embodiment, the amount of new processing liquid used can be reduced.

[0256] Next, the substrate processing apparatus 100 of this embodiment will be described with reference to Figures 1 to 18. Figures 18(a) to 18(d) are schematic diagrams showing the flow of the substrate processing apparatus 100 of this embodiment. The flow diagram of Figure 18 is similar to the schematic diagrams of Figures 5(a) to 5(c) except that Figure 18(d) has been newly added, and therefore, duplicated explanations will be omitted to avoid redundancy.

[0257] As shown in FIG. 18(a), a chemical liquid is supplied to the front surface Wa and back surface Wb of the substrate W, and the front surface Wa and back surface Wb of the substrate W are treated with the chemical liquid. The chemical liquid supply unit 30 supplies the chemical liquid to the front surface Wa of the rotating substrate W. The back surface processing liquid supply unit 50 supplies the chemical liquid to the back surface Wb of the rotating substrate W. Here, the cup 80 is located in an upper position. Therefore, the cup 80 faces the side of the substrate W. The cup 80 collects the chemical liquid that splashes as the substrate W rotates.

[0258] In the drainage mechanism 90, the valve 92b is open and the valve 94b is closed, so that the chemical liquid collected in the cup 80 flows through the pipe 91 and the pipe 92a and is discharged.

[0259] 18(b), a rinse liquid is supplied to the front surface Wa and back surface Wb of the substrate W, and the front surface Wa and back surface Wb of the substrate W are treated with the rinse liquid. The rinse liquid supply unit 40 supplies the rinse liquid to the front surface Wa of the rotating substrate W. The back surface processing liquid supply unit 50 supplies the rinse liquid to the back surface Wb of the rotating substrate W. The cup 80 collects the rinse liquid that splashes as the substrate W rotates.

[0260] In the drainage mechanism 90, the valve 92b is open and the valve 94b remains closed, so that the rinse liquid collected in the cup 80 flows through the pipe 91 and the pipe 92a and is discharged.

[0261] 18(c), a rinse liquid is supplied to the front surface Wa of the substrate W to process the front surface Wa of the substrate W with the rinse liquid, and a recovery liquid is supplied to the back surface Wb of the substrate W to process the back surface Wb of the substrate W with the recovery liquid. For example, the rinse liquid supply unit 40 continues to supply the rinse liquid to the front surface Wa of the rotating substrate W. The back surface processing liquid supply unit 50 supplies the recovery liquid to the back surface Wb of the rotating substrate W. The cup 80 collects the rinse liquid that splashes as the substrate W rotates, and also collects the recovery liquid that splashes as the substrate W rotates.

[0262] In the drainage mechanism 90, the valve 92b is open and the valve 94b remains closed, so that the rinse liquid and recovery liquid collected in the cup 80 flow through the pipe 91 and the pipe 92a and are discharged.

[0263] Thereafter, the rinse liquid supply unit 40 stops supplying the rinse liquid, and the back surface processing liquid supply unit 50 stops supplying the recovery liquid. At this time, the substrate holding unit 20 may increase the rotation speed of the substrate W to dry the substrate W. Thereafter, the substrate holding unit 20 stops rotating the substrate W, and the substrate W is unloaded from the chamber 11.

[0264] 18(d), the inside of the chamber 11 is cleaned. For example, a cleaning liquid is supplied from a pipe 11p into the chamber 11. The cup 80 collects the cleaning liquid.

[0265] In the drainage mechanism 90, the valve 92b is closed and the valve 94b is opened. Therefore, the cleaning liquid collected in the cup 80 flows through the pipe 91 and the pipe 94a and is collected in the collected liquid storage tank 210.

[0266] In this way, the recovery liquid storage tank 210 recovers, as recovery liquid, at least a portion of the cleaning liquid used to clean the inside of the chamber 11. The recovery liquid recovered in the recovery liquid storage tank 210 is supplied to the back surface Wb of the substrate W. Therefore, according to this embodiment, the amount of new processing liquid used can be reduced.

[0267] Next, a substrate processing apparatus 100 according to this embodiment will be described with reference to Figures 1 to 19. Figure 19 is a schematic diagram of the substrate processing apparatus 100 according to this embodiment. The substrate processing apparatus 100 in Figure 19 has the same configuration as the substrate processing apparatus 100 shown in Figure 2, except that a rinse liquid storage tank 11t, which stores the rinse liquid that steadily flows through a pipe 11s connected to a pipe 42 of a rinse liquid supply unit 40, is connected to a collecting liquid storage tank 210 via a pipe 11u, and therefore, redundant description will be omitted to avoid redundancy.

[0268] 19, the substrate processing apparatus 100 further includes a pipe 11s, a rinse liquid storage tank 11t, and a pipe 11u. The pipe 11s connects the pipe 42 of the rinse liquid supply unit 40 to the rinse liquid storage tank 11t. The rinse liquid storage tank 11t stores the rinse liquid that has flowed from a supply source through the pipe 42 and the pipe 11s. The rinse liquid storage tank 11t is connected to the recovery liquid storage tank 210 via the pipe 11u. The rinse liquid storage tank 11t may be disposed within the chamber 11. Alternatively, the rinse liquid storage tank 11t may be disposed in the processing liquid cabinet 110 or the processing liquid box 120. In this specification, the pipe 42 is an example of a rinse liquid pipe, and the pipe 11s is an example of a branch pipe.

[0269] The inner diameter of at least a portion of the pipe 11s is smaller than the inner diameter of the pipe 42. Therefore, when the valve 46 is open, the flow rate of the rinse liquid flowing through the pipe 42 is greater than the flow rate of the rinse liquid flowing through the pipe 11s. However, when the valve 46 is closed, the rinse liquid does not flow through the pipe 42, but flows through the pipe 11s. The steady flow of the rinse liquid through the pipe 11s connected to the supply source can suppress the generation of bacteria in the pipe 42 and the pipe 11s connected to the supply source.

[0270] Here, the rinse liquid storage tank 11t temporarily stores the rinse liquid, and the rinse liquid stored in the rinse liquid storage tank 11t is collected in the collected liquid storage tank 210, but this embodiment is not limited to this. The rinse liquid in the pipe connected to the supply source may be directly collected in the collected liquid storage tank 210 at a smaller flow rate.

[0271] In this way, the rinse liquid that forms a minute flow in the pipe 42 through which the rinse liquid flows is recovered as the recovered liquid. The recovered liquid recovered in the recovered liquid storage tank 210 is supplied to the back surface Wb of the substrate W. Therefore, according to this embodiment, the amount of new processing liquid used can be reduced.

[0272] In the above-described substrate processing apparatus 100, the back surface processing liquid supply unit 50 can selectively supply the recovery liquid and the rinse liquid to the back surface Wb of the substrate W, but this embodiment is not limited to this. The back surface processing liquid supply unit 50 may supply only the recovery liquid to the back surface Wb of the substrate W.

[0273] 2, the back surface processing liquid supply unit 50 includes the chemical liquid supply unit 54, the rinse liquid supply unit 56, and the recovery liquid supply unit 58, and in the substrate processing method described above with reference to FIG. 5, the chemical liquid, the rinse liquid, and the recovery liquid are selectively supplied to the back surface Wb of the substrate W, but this embodiment is not limited to this. The back surface processing liquid supply unit 50 may include the recovery liquid supply unit 58 but may not include the chemical liquid supply unit 54 and the rinse liquid supply unit 56. In this case, the recovery liquid may be supplied to the back surface Wb of the substrate W without supplying the chemical liquid and the rinse liquid.

[0274] In the above description, during the period when the rinse liquid supply unit 40 supplies the rinse liquid to the front surface Wa of the substrate W, the back surface processing liquid supply unit 50 supplies the recovery liquid after supplying the rinse liquid to the back surface Wb of the substrate W. However, this embodiment is not limited to this. During the period when the rinse liquid supply unit 40 supplies the rinse liquid to the front surface Wa of the substrate W, the back surface processing liquid supply unit 50 may supply the recovery liquid without supplying the rinse liquid to the back surface Wb of the substrate W. In this case, the back surface processing liquid supply unit 50 may not have the rinse liquid supply unit 56.

[0275] Next, the substrate processing apparatus 100 of this embodiment will be described with reference to Figures 1 to 20. Figures 20(a) and 20(b) are schematic diagrams showing the flow of the substrate processing apparatus 100 of this embodiment.

[0276] 20(a), a chemical liquid is supplied to the front surface Wa of the substrate W to process the front surface Wa with the chemical liquid, and a recovery liquid is supplied to the back surface Wb of the substrate W to process the back surface Wb with the recovery liquid. The rinse liquid supply unit 40 supplies the rinse liquid to the front surface Wa of the rotating substrate W. The back surface processing liquid supply unit 50 supplies the recovery liquid to the back surface Wb of the substrate W.

[0277] Here, the cup 80 is located at an upper position and faces the side of the substrate W. The cup 80 collects the chemical liquid and the recovery liquid that are scattered as the substrate W rotates.

[0278] Valve 92b is open in drainage mechanism 90. Therefore, the chemical solution and recovered liquid collected in cup 80 flow through pipe 91 and pipe 92a and are discharged.

[0279] 20(b), a rinse liquid is supplied to the front surface Wa of the substrate W to process the front surface Wa of the substrate W with the rinse liquid, and a recovery liquid is supplied to the back surface Wb of the substrate W to process the back surface Wb of the substrate W with the recovery liquid. The rinse liquid supply unit 40 supplies the rinse liquid to the front surface Wa of the rotating substrate W, and the back surface processing liquid supply unit 50 supplies the recovery liquid to the back surface Wb of the rotating substrate W. Here, the cup 80 re-collects the rinse liquid and recovery liquid that splash as the substrate W rotates.

[0280] In the drainage mechanism 90, the valve 92b remains open, so that the rinse liquid and recovery liquid collected in the cup 80 flow through the pipe 91 and the pipe 92a and are discharged.

[0281] Thereafter, the rinse liquid supply unit 40 stops supplying the rinse liquid, and the back surface processing liquid supply unit 50 stops supplying the recovery liquid. At this time, the substrate holding unit 20 may increase the rotation speed of the substrate W to dry the substrate W. Thereafter, the substrate holding unit 20 stops rotating the substrate W, and the substrate W is unloaded from the chamber 11.

[0282] In this embodiment, the front surface Wa of the substrate W is treated with the chemical liquid as described above, and then treated with the rinse liquid. According to this embodiment, during the period in which the chemical liquid and the rinse liquid are supplied to the front surface Wa of the substrate W, a recovery liquid is supplied to the back surface Wb of the substrate W. Therefore, the substrate processing apparatus 100 of this embodiment can reduce the amount of new processing liquid used.

[0283] 1 to 19, the back surface processing liquid supply unit 50 includes the rinsing liquid supply unit 56 in addition to the chemical liquid supply unit 54, but this embodiment is not limited to this. The back surface processing liquid supply unit 50 may include the chemical liquid supply unit 54 without including the rinsing liquid supply unit 56.

[0284] Next, the substrate processing apparatus 100 of this embodiment will be described with reference to Figures 1 to 21. Figure 21 is a schematic diagram of the substrate processing apparatus 100 of this embodiment. The substrate processing unit 10 in Figure 21 has the same configuration as the substrate processing apparatus 100 shown in Figure 2, except that it supplies a diluted chemical solution obtained by diluting a chemical solution with a diluting solution to the front surface Wa of the substrate W, and supplies a diluted chemical solution obtained by diluting a chemical solution with a recovery solution to the back surface Wb of the substrate W, and therefore, redundant description will be omitted to avoid redundancy.

[0285] As shown in FIG. 21, in the substrate processing unit 10, the chemical liquid supplying part 30 supplies a diluted chemical liquid obtained by diluting a chemical liquid with a diluting liquid onto the front surface Wa of the substrate W.

[0286] The chemical liquid supply unit 30 includes a pipe 32, a nozzle 34, a pipe 32p, a valve 36p, a pipe 32q, and a valve 36q. The nozzle 34 is connected to one end of the pipe 32.

[0287] The pipe 32p is connected to the other end of the pipe 32. A chemical solution is supplied to the pipe 32p from a supply source. The valve 36p opens and closes the flow path in the pipe 32p. When the valve 36p is opened, the chemical solution flows through the pipe 32p.

[0288] The chemical solution may include, for example, hydrofluoric acid. The chemical solution may also include phosphoric acid. The chemical solution may also include hydrogen peroxide. The chemical solution may also include SC1 (ammonia-hydrogen peroxide mixture), SC2 (hydrochloric acid-hydrogen peroxide mixture), or aqua regia (a mixture of concentrated hydrochloric acid and concentrated nitric acid).

[0289] Pipe 32q is connected to the other end of pipe 32. Diluent is supplied to pipe 32q from a supply source. Valve 36q opens and closes the flow path in pipe 32q. When valve 36q is opened, diluent flows through pipe 32q.

[0290] The diluted solution may include, for example, deionized water (DIW), carbonated water, electrolytic ionized water, ozone water, ammonia water, hydrochloric acid water with a diluted concentration (for example, about 10 ppm to 100 ppm), or reduced water (hydrogen water). The diluted solution may be the same type as the rinse solution.

[0291] When the valves 36p and 36q are opened, the chemical liquid and the diluent flow through the pipes 32p and 32q, respectively, and thus a diluted chemical liquid, which is the chemical liquid diluted with the diluent, flows in the pipe 32. The nozzle 34 discharges the diluted chemical liquid onto the front surface Wa of the substrate W.

[0292] The back surface processing liquid supply unit 50 supplies the recovery liquid alone or a mixture of the chemical liquid and the recovery liquid to the back surface Wb of the substrate W. The back surface processing liquid supply unit 50 includes a chemical liquid supply unit 54 and a recovery liquid supply unit 58. On the other hand, the substrate processing apparatus 100 shown in FIG. 21 differs from the substrate processing apparatus 100 shown in FIG. 2 in that the back surface processing liquid supply unit 50 does not include the rinse liquid supply unit 56.

[0293] For example, the back surface processing liquid supply unit 50 may supply the recovery liquid to the back surface Wb of the substrate W. Alternatively, the back surface processing liquid supply unit 50 may mix the chemical liquid and the recovery liquid and supply the resulting mixture to the back surface Wb of the substrate W.

[0294] Next, the substrate processing apparatus 100 of this embodiment will be described with reference to Figures 1 to 22. Figures 22(a) and 22(b) are schematic diagrams showing the flow of the substrate processing apparatus 100 of this embodiment. Figures 22(a) and 22(b) are similar to the flow of the substrate processing apparatus 100 shown in Figures 5(a) to 5(c) except that the substrate W is processed with a diluted chemical solution, and therefore, redundant explanations will be omitted to avoid redundancy.

[0295] 22(a), a diluted chemical liquid is supplied to the front surface Wa and back surface Wb of the substrate W, and the front surface Wa and back surface Wb of the substrate W are treated with the diluted chemical liquid. The chemical liquid supply unit 30 supplies the diluted chemical liquid to the front surface Wa of the rotating substrate W. Here, the valves 36p and 36q are open, and the nozzle 34 discharges the diluted chemical liquid onto the front surface Wa of the substrate W.

[0296] The back surface processing liquid supply unit 50 supplies the diluted chemical liquid to the back surface Wb of the rotating substrate W. The valves 54b and 58b are open. Therefore, the chemical liquid flowing through the pipe 54a and the recovery liquid flowing through the pipe 58a are mixed in the pipe 52c to generate the diluted chemical liquid. Thereafter, the nozzle 51 discharges the diluted chemical liquid onto the back surface Wb of the substrate W.

[0297] Here, the cup 80 is located at an upper position and faces the side of the substrate W. In this case, the cup 80 collects the diluted chemical solution that splashes from the substrate W as the substrate W rotates.

[0298] Valve 92b is open in drainage mechanism 90. Therefore, the diluted chemical solution collected in cup 80 flows through pipe 91 and pipe 92a and is discharged.

[0299] As shown in FIG. 22(b), a rinse liquid is supplied to the front surface Wa of the substrate W to process the front surface Wa of the substrate W with the rinse liquid, and a recovery liquid is supplied to the back surface Wb of the substrate W to process the back surface Wb of the substrate W with the recovery liquid. The rinse liquid supply unit 40 supplies the rinse liquid to the front surface Wa of the rotating substrate W. The back surface processing liquid supply unit 50 supplies the recovery liquid to the back surface Wb of the rotating substrate W. The back surface processing liquid supply unit 50 closes the valve 54b to stop the supply of the chemical liquid. The cup 80 collects the rinse liquid and recovery liquid that splash as the substrate W rotates.

[0300] In the drainage mechanism 90, the valve 92b remains open, so that the rinse liquid and recovery liquid collected in the cup 80 flow through the pipe 91 and the pipe 92a and are discharged.

[0301] Thereafter, the rinse liquid supply unit 40 stops supplying the rinse liquid, and the back surface processing liquid supply unit 50 stops supplying the recovery liquid. At this time, the substrate holding unit 20 may increase the rotation speed of the substrate W to dry the substrate W. Thereafter, the substrate holding unit 20 stops rotating the substrate W, and the substrate W is unloaded from the chamber 11.

[0302] According to this embodiment, the front surface Wa of the substrate W is treated with the diluted chemical liquid as described above, and then treated with the rinse liquid. According to this embodiment, during the period in which the diluted chemical liquid and the rinse liquid are supplied to the front surface Wa of the substrate W, the recovery liquid is supplied as at least a part of the processing liquid to the back surface Wb of the substrate W. Therefore, the substrate processing apparatus 100 of this embodiment can reduce the amount of new processing liquid used.

[0303] Next, the substrate processing apparatus 100 of this embodiment will be described with reference to Figures 1 to 23. Figure 23 is a schematic diagram of the substrate processing apparatus 100 of this embodiment. The substrate processing apparatus 100 of Figure 23 has the same configuration as the substrate processing apparatus 100 shown in Figure 2, except that it supplies a first chemical liquid and a second chemical liquid to the substrate W, and therefore, duplicated descriptions will be omitted to avoid redundancy.

[0304] 23, the chemical liquid supply unit 30 has a first chemical liquid supply unit 30a and a second chemical liquid supply unit 30b. The first chemical liquid supply unit 30a supplies a first chemical liquid to the front surface Wa of the substrate W. The second chemical liquid supply unit 30b supplies a second chemical liquid different from the first chemical liquid to the front surface Wa of the substrate W. For example, the first chemical liquid supply unit 30a supplies hydrofluoric acid to the front surface Wa of the substrate W, and the second chemical liquid supply unit 30b supplies an ammonia-hydrogen peroxide solution mixture (SC1) to the front surface Wa of the substrate W.

[0305] The first chemical liquid supply unit 30a includes a pipe 32a, a nozzle 34a, and a valve 36a. The nozzle 34a is connected to the pipe 32a. The first chemical liquid is supplied to the pipe 32a from a supply source. The valve 36a opens and closes a flow path in the pipe 32a. The nozzle 34a discharges the first chemical liquid onto the front surface Wa of the substrate W.

[0306] Valve 36a adjusts the opening of pipe 32a to regulate the flow rate of the first chemical liquid supplied to pipe 32a. Specifically, valve 36a includes a valve body (not shown) having a valve seat provided therein, a valve element that opens and closes the valve seat, and an actuator (not shown) that moves the valve element between an open position and a closed position.

[0307] The nozzle 34a may be movable. The first chemical liquid supply unit 30a may further include a nozzle moving unit 38a. The nozzle moving unit 38a may raise and lower the nozzle 34a, or may rotate the nozzle 34a horizontally around a rotation axis. The nozzle moving unit 38a raises and lowers the nozzle 34a. For example, the nozzle moving unit 38a includes a ball screw mechanism and an electric motor that provides driving force to the ball screw mechanism. The nozzle moving unit 38a also rotates the nozzle 34a horizontally. For example, the nozzle moving unit 38a includes an electric motor.

[0308] The second chemical liquid supply unit 30b includes a pipe 32b, a nozzle 34b, and a valve 36b. The nozzle 34b is connected to the pipe 32b. The second chemical liquid is supplied to the pipe 32b from a supply source. The valve 36b opens and closes a flow path in the pipe 32b. The nozzle 34b discharges the second chemical liquid onto the front surface Wa of the substrate W. The pipe 32b, the nozzle 34b, the valve 36b, and the nozzle movement unit 38b in the second chemical liquid supply unit 30b have the same configuration as the pipe 32a, the nozzle 34a, the valve 36a, and the nozzle movement unit 38a in the first chemical liquid supply unit 30a, and therefore a redundant description will be omitted.

[0309] The back surface processing liquid supply unit 50 has a first chemical liquid supply unit 53 and a second chemical liquid supply unit 55. The first chemical liquid supply unit 53 supplies a first chemical liquid to the back surface Wb of the substrate W. The second chemical liquid supply unit 55 supplies a second chemical liquid different from the first chemical liquid to the back surface Wb of the substrate W. For example, the first chemical liquid supply unit 53 supplies hydrofluoric acid to the back surface Wb of the substrate W, and the second chemical liquid supply unit 55 supplies SC1 (ammonia-hydrogen peroxide solution mixture) to the back surface Wb of the substrate W.

[0310] The first chemical liquid supply unit 53 includes a pipe 53a and a valve 53b. The first chemical liquid is supplied from a supply source to the pipe 53a. The valve 53b opens and closes the flow path in the pipe 53a.

[0311] Valve 53b adjusts the opening of pipe 53a to adjust the flow rate of the first chemical liquid supplied to pipe 53a. Specifically, valve 53b includes a valve body (not shown) having a valve seat provided therein, a valve element that opens and closes the valve seat, and an actuator (not shown) that moves the valve element between an open position and a closed position.

[0312] Second chemical liquid supply unit 55 includes pipe 55a and valve 55b. Pipe 55a is supplied with the second chemical liquid from a supply source. Valve 55b opens and closes the flow path in pipe 55a. Pipe 55a and valve 55b in second chemical liquid supply unit 55 have the same configuration as pipe 53a and valve 53b in first chemical liquid supply unit 53, and therefore, redundant description will be omitted.

[0313] Drainage mechanism 90 further includes pipe 93a and valve 93b in addition to pipe 92a and valve 92b. Pipe 92a is connected to pipe 91. The first chemical liquid and rinse liquid collected in cup 80 flow from pipe 91 into pipe 92a.

[0314] Pipe 93a is connected to pipe 91. The second chemical liquid and rinse liquid collected in cup 80 flow from pipe 91 into pipe 93a. Valve 93b opens and closes the flow path in pipe 93a. Valve 93b adjusts the opening of pipe 93a to regulate the flow rate of the second chemical liquid and rinse liquid flowing through pipe 93a. Specifically, valve 93b includes a valve body (not shown) with a valve seat provided therein, a valve element that opens and closes the valve seat, and an actuator (not shown) that moves the valve element between an open position and a closed position.

[0315] Next, the substrate processing apparatus 100 of this embodiment will be described with reference to Figures 1 to 25. Figures 24(a) to 25(b) are schematic diagrams showing the flow of the substrate processing apparatus 100 of this embodiment. Figures 24(a) to 25(b) are similar to the flow of the substrate processing apparatus 100 shown in Figure 5, except that two types of chemical liquids and a rinse are alternately supplied to the substrate W, and therefore, to avoid redundancy, duplicated explanations will be omitted.

[0316] 24(a), a first chemical liquid is supplied to the front surface Wa and back surface Wb of the substrate W, and the front surface Wa and back surface Wb of the substrate W are treated with the first chemical liquid. The first chemical liquid supply unit 30a supplies the first chemical liquid to the front surface Wa of the rotating substrate W. The back surface processing liquid supply unit 50 supplies the first chemical liquid to the back surface Wb of the rotating substrate W. In this case, the cup 80 collects the first chemical liquid that splashes as the substrate W rotates.

[0317] In drainage mechanism 90, valve 92b is open, while valve 93b is closed, so that the first chemical liquid collected in cup 80 flows through pipe 91 and pipe 92a and is discharged.

[0318] 24(b), a rinse liquid is supplied to the front surface Wa and back surface Wb of the substrate W, and the front surface Wa and back surface Wb of the substrate W are treated with the rinse liquid. The rinse liquid supply unit 40 supplies the rinse liquid to the front surface Wa of the rotating substrate W. The back surface processing liquid supply unit 50 supplies the rinse liquid to the back surface Wb of the rotating substrate W. The cup 80 collects the rinse liquid that splashes as the substrate W rotates.

[0319] In the drainage mechanism 90, the valve 92b is open and the valve 93b remains closed, so that the rinse liquid collected in the cup 80 flows through the pipe 91 and the pipe 92a and is discharged.

[0320] 24(c), the second chemical liquid is supplied to the front surface Wa and back surface Wb of the substrate W, and the front surface Wa and back surface Wb of the substrate W are treated with the second chemical liquid. The second chemical liquid supply unit 30b supplies the second chemical liquid to the front surface Wa of the rotating substrate W. The back surface processing liquid supply unit 50 supplies the second chemical liquid to the back surface Wb of the rotating substrate W. The cup 80 collects the second chemical liquid that splashes as the substrate W rotates.

[0321] In drainage mechanism 90, valve 93b is opened, while valve 92b is closed, so that the second chemical liquid collected in cup 80 flows through pipe 91 and pipe 93a and is discharged.

[0322] 25(a), a rinse liquid is supplied to the front surface Wa and back surface Wb of the substrate W, and the front surface Wa and back surface Wb of the substrate W are treated with the rinse liquid. A rinse liquid supply unit 40 supplies the rinse liquid to the front surface Wa of the rotating substrate W. A back surface processing liquid supply unit 50 supplies the rinse liquid to the back surface Wb of the rotating substrate W. A cup 80 collects the rinse liquid that splashes as the substrate W rotates.

[0323] In the drainage mechanism 90, the valve 93b is open and the valve 92b remains closed, so that the rinse liquid collected in the cup 80 flows through the pipe 91 and the pipe 93a and is discharged.

[0324] 25(b), a rinse liquid is supplied to the front surface Wa of the substrate W to process the front surface Wa of the substrate W with the rinse liquid, and a recovery liquid is supplied to the back surface Wb of the substrate W to process the back surface Wb of the substrate W with the recovery liquid. The rinse liquid supply unit 40 supplies the rinse liquid to the front surface Wa of the rotating substrate W. The back surface processing liquid supply unit 50 supplies the recovery liquid to the back surface Wb of the substrate W. In this case, the cup 80 collects the rinse liquid and recovery liquid that splash as the substrate W rotates.

[0325] In the drainage mechanism 90, the valve 93b is open and the valve 92b remains closed, so that the rinse liquid and recovery liquid collected in the cup 80 flow through the pipe 91 and the pipe 93a and are discharged.

[0326] Thereafter, the rinse liquid supply unit 40 stops supplying the rinse liquid, and the back surface processing liquid supply unit 50 stops supplying the recovery liquid. At this time, the substrate holding unit 20 may increase the rotation speed of the substrate W to dry the substrate W. Thereafter, the substrate holding unit 20 stops rotating the substrate W, and the substrate W is unloaded from the chamber 11.

[0327] According to this embodiment, the front surface Wa of the substrate W is processed alternately with the first chemical liquid, the second chemical liquid, and the rinse liquid as described above. According to this embodiment, during the period in which the rinse liquid is supplied to the front surface Wa of the substrate W, the recovery liquid is supplied to the back surface Wb of the substrate W. Therefore, the substrate processing apparatus 100 of this embodiment can reduce the amount of new processing liquid used.

[0328] 24 and 25, the recovery liquid is supplied to the back surface Wb of the substrate W after a predetermined time has elapsed during the period in which the rinse liquid is supplied after the second chemical liquid is supplied to the front surface Wa of the substrate W. However, this embodiment is not limited to this. The recovery liquid may be supplied to the back surface Wb of the substrate W after a predetermined time has elapsed during the period in which the rinse liquid is supplied after the first chemical liquid is supplied to the front surface Wa of the substrate W.

[0329] In the substrate processing apparatus 100 described above, all liquids scattered from the rotating substrate W are collected in the same cup 80, but this embodiment is not limited to this. There may be multiple types of cups 80.

[0330] In the above-described substrate processing apparatus 100, the substrate holder 20 increases the rotation speed of the substrate W to dry the substrate W, but this embodiment is not limited to this. The substrate W may also be dried by supplying a gas. Furthermore, after the substrate W is rinsed, the substrate W may be dried by supplying a highly volatile processing liquid to the substrate W.

[0331] Next, a substrate processing apparatus 100 according to this embodiment will be described with reference to Figures 1 to 26. Figure 26 is a schematic diagram of the substrate processing apparatus 100 according to this embodiment. The substrate processing apparatus 100 in Figure 26 has the same configuration as the substrate processing apparatus 100 shown in Figure 23, except that the cup 80 includes a first cup 81 and a second cup 82, and the substrate processing apparatus 100 further includes a shielding member 60, a processing liquid supply unit 72, and an inert gas supply unit 74. Therefore, to avoid redundancy, a duplicated description will be omitted.

[0332] 26, the substrate processing apparatus 100 further includes a shielding member 60, a processing liquid supply unit 72, and an inert gas supply unit 74. The shielding member 60 is located above the surface Wa of the substrate W. The shielding member 60 is movable in a direction vertical to the surface Wa of the substrate W. When the shielding member 60 moves closer to the surface Wa of the substrate W, it shields the surface Wa of the substrate W. The shielding member 60 supplies the processing liquid and the inert gas to the surface Wa of the substrate W.

[0333] The shielding member 60 is configured to be movable relative to the substrate W. The shielding member 60 further includes a shielding plate 62 and a moving part 64. The shielding plate 62 is plate-shaped and extends in the horizontal direction (XY plane). The shielding plate 62 is positioned above the front surface Wa of the substrate W held by the chuck member 22. The lower surface 62a of the shielding plate 62 faces the front surface Wa of the substrate W held by the chuck member 22. The lower surface 62a is, for example, circular. The diameter of the lower surface 62a may be equal to or greater than the diameter of the substrate W.

[0334] The moving unit 64 moves the shielding plate 62 up and down in the vertical direction. For example, the moving unit 64 includes a ball screw mechanism and an electric motor that provides a driving force to the ball screw mechanism.

[0335] The moving unit 64 raises and lowers the shielding plate 62 between a retracted position and a shielding position. The shielding position is lower than the retracted position. Specifically, the shielding position is closer to the substrate W held by the chuck member 22 than the retracted position. In FIG. 26, the shielding plate 62 is located at the retracted position.

[0336] When the shielding plate 62 moves from the retracted position to the shielding position, a processing space is formed by the shielding plate 62 in the shielding position and the cup 80 in the upper position. The processing space is a space that is substantially shielded from the external atmosphere. In other words, the processing space is a local space formed inside the chamber 11. The processing space is substantially shielded from the atmosphere inside the chamber 11.

[0337] The processing liquid supply unit 72 supplies a processing liquid to the surface Wa of the substrate W. Here, the processing liquid is suitably used to dry the rinse liquid. The processing liquid is preferably a low-surface-tension liquid having a surface tension lower than that of the rinse liquid. In this case, the substrate W is not dried immediately after the rinse liquid is shaken off from the substrate W, but rather the rinse liquid on the substrate W is replaced with the processing liquid, and then the substrate W is dried by shaking off the processing liquid from the substrate W. Therefore, if the processing liquid is a low-surface-tension liquid, the surface tension acting on the substrate W when drying the substrate W can be reduced.

[0338] Examples of organic solvents that function as treatment liquids include liquids containing at least one of IPA (isopropyl alcohol), HFE (hydrofluoroether), methanol, ethanol, acetone, PGEE (propylene glycol monoethyl ether), and trans-1,2-dichloroethylene. The treatment liquid does not have to be a single component, but may be a liquid mixed with other components. For example, it may be a mixture of IPA and DIW, or a mixture of IPA and HFE.

[0339] The processing liquid supply unit 72 includes a pipe 72a, a nozzle 72b, and a valve 72c. The nozzle 72b is attached to the shielding plate 62. The processing liquid is supplied to the pipe 72a from a supply source. The valve 72c opens and closes a flow path in the pipe 72a. The nozzle 72b ejects the processing liquid onto the front surface Wa of the substrate W.

[0340] The valve 72c adjusts the opening of the pipe 72a to adjust the flow rate of the processing liquid supplied to the pipe 72a. Specifically, the valve 72c includes a valve body (not shown) with a valve seat provided therein, a valve element that opens and closes the valve seat, and an actuator (not shown) that moves the valve element between an open position and a closed position.

[0341] The inert gas supply unit 74 supplies an inert gas to the surface Wa of the substrate W. When supplied to the surface Wa of the substrate W, the inert gas does not substantially change the characteristics of the surface Wa of the substrate W. Typically, the inert gas is nitrogen gas. However, the inert gas may also be a rare gas.

[0342] The inert gas supply unit 74 supplies an inert gas to the surface Wa of the substrate W. The inert gas supply unit 74 includes a pipe 74a, a nozzle 74b, and a valve 74c. The nozzle 74b is attached to the shielding plate 62. An inert gas is supplied to the pipe 74a from a supply source. The valve 74c opens and closes a flow path in the pipe 74a. The nozzle 74b ejects the inert gas onto the surface Wa of the substrate W.

[0343] Valve 74c adjusts the opening of pipe 74a to adjust the flow rate of inert gas supplied to pipe 74a. Specifically, valve 74c includes a valve body (not shown) with a valve seat provided therein, a valve element that opens and closes the valve seat, and an actuator (not shown) that moves the valve element between an open position and a closed position.

[0344] Nozzle 72b and nozzle 74b are installed on the shielding plate 62. The outlets of nozzle 72b and nozzle 74b open to the lower surface 62a of the shielding plate 62. The outlets of nozzle 72b and nozzle 74b may be positioned opposite to the center of the substrate W held by the chuck member 22. Nozzle 72b ejects a processing liquid toward the front surface Wa of the substrate W. Nozzle 74b ejects an inert gas toward the front surface Wa of the substrate W.

[0345] The cup 80 has a first cup 81 and a second cup 82. The second cup 82 is located radially outward of the substrate W relative to the first cup 81. The first cup 81 and the second cup 82 each move up and down in the vertical direction. The first cup 81 and the second cup 82 move up to an upper position located to the side of the substrate W. The first cup 81 and the second cup 82 also move down to a lower position located diagonally below the substrate W. The first cup 81 and the second cup 82 collect liquid splashed from the substrate W.

[0346] The second cup 82 is positioned above and overlaps the first cup 81. Therefore, when the first cup 81 is lowered, the second cup 82 can be lowered to the position where the first cup 81 is lowered.

[0347] The drainage mechanism 90 discharges the chemical liquid, rinse liquid, and processing liquid collected in the cups 80 to the outside of the chamber 11. The drainage mechanism 90 has a pipe 91a for discharging the processing liquid collected in the first cup 81 and a pipe 91b for discharging the processing liquid collected in the second cup 82. One end of the pipe 91a is connected to the bottom of the first cup 81. One end of the pipe 91b is connected to the bottom of the second cup 82.

[0348] The drainage mechanism 90 further includes a pipe 95a and a valve 95b in addition to the pipe 92a, the valve 92b, the pipe 93a, and the valve 93b. The pipes 92a and 93a are connected to the pipe 91a. The pipe 95a is connected to the pipe 91b. The valve 95b has a configuration similar to that of the valves 92b and 93b.

[0349] For example, the first cup 81 is positioned vertically above and to the side of the substrate W during the period when the first chemical liquid supply unit 30a supplies the first chemical liquid to the substrate W. At this time, the second cup 82 is also positioned above, similar to the first cup 81.

[0350] Furthermore, the first cup 81 is positioned to the side of the substrate W during the period when the rinsing liquid supply unit 40 supplies the rinsing liquid to the substrate W. Thereafter, the first cup 81 is positioned to the side of the substrate W during the period when the second chemical liquid supply unit 30b and the rinsing liquid supply unit 40 supply the second chemical liquid and the rinsing liquid to the substrate W, respectively.

[0351] In this case, the first cup 81 collects the first chemical liquid, the rinse liquid, the second chemical liquid, and the rinse liquid that are scattered as the substrate W rotates. After that, when the period during which the rinse liquid supply unit 40 supplies the rinse liquid to the substrate W ends, the first cup 81 descends vertically downward from the side of the substrate W. In this case, the second cup 82 is positioned on the side of the substrate W.

[0352] Thereafter, the second cup 82 is positioned to the side of the substrate W for the period during which the shielding member 60 supplies the processing liquid to the substrate W. Thereafter, the second cup 82 is positioned to the side of the substrate W for the period during which the shielding member 60 supplies the inert gas to the substrate W. When the period during which the shielding member 60 supplies the inert gas to the substrate W ends, the second cup 82 descends vertically downward from the side of the substrate W.

[0353] The substrate processing apparatus 100 of this embodiment alternately processes the front surface Wa of the substrate W with the first chemical liquid, the second chemical liquid, and the rinse liquid. According to this embodiment, a recovery liquid is supplied to the back surface Wb of the substrate W during at least a part of the period in which the rinse liquid is supplied to the front surface Wa of the substrate W. Therefore, the substrate processing apparatus 100 of this embodiment can reduce the amount of new processing liquid used.

[0354] Next, the substrate processing apparatus 100 of this embodiment will be described with reference to Figures 1 to 30. Figures 27(a) to 30 are schematic diagrams showing the flow of the substrate processing apparatus 100 of this embodiment. Figures 27(a) to 30 are similar to Figures 24(a) to 25(b) except that the cup 80 has a first cup 81 and a second cup 82, and a processing liquid and an inert gas are supplied to the surface Wa of the substrate W from a shielding member 60, and therefore, duplicated explanations will be omitted to avoid redundancy.

[0355] 27(a), a first chemical liquid is supplied to the front surface Wa and back surface Wb of the substrate W, and the front surface Wa and back surface Wb of the substrate W are treated with the first chemical liquid. The first chemical liquid supply unit 30a supplies the first chemical liquid to the front surface Wa of the rotating substrate W. The back surface processing liquid supply unit 50 supplies the first chemical liquid to the back surface Wb of the rotating substrate W.

[0356] Here, the first cup 81 and the second cup 82 are both located at the upper position. Therefore, the first cup 81 faces the side of the substrate W, and the first cup 81 collects the first chemical liquid that splashes as the substrate W rotates.

[0357] In drainage mechanism 90, valve 92b is open, while valves 93b and 95b are closed. Therefore, the first chemical liquid collected in first cup 81 flows through pipes 91a and 92a and is discharged.

[0358] 27(b), a rinse liquid is supplied to the front surface Wa and back surface Wb of the substrate W, and the front surface Wa and back surface Wb of the substrate W are treated with the rinse liquid. The rinse liquid supply unit 40 supplies the rinse liquid to the front surface Wa of the rotating substrate W. The back surface processing liquid supply unit 50 supplies the rinse liquid to the back surface Wb of the rotating substrate W. The first cup 81 collects the rinse liquid that splashes as the substrate W rotates.

[0359] In the drainage mechanism 90, the valve 92b is open, and the valves 93b and 95b remain closed, so that the rinse liquid collected in the first cup 81 flows through the pipes 91a and 92a and is discharged.

[0360] 28(a), the second chemical liquid is supplied to the front surface Wa and back surface Wb of the substrate W, and the front surface Wa and back surface Wb of the substrate W are treated with the second chemical liquid. The second chemical liquid supply unit 30b supplies the second chemical liquid to the front surface Wa of the rotating substrate W. The back surface processing liquid supply unit 50 supplies the second chemical liquid to the back surface Wb of the rotating substrate W. Here, the first cup 81 collects the second chemical liquid that splashes as the substrate W rotates.

[0361] In drainage mechanism 90, valve 93b is opened, while valves 92b and 95b are closed, so that the second chemical liquid collected in first cup 81 flows through pipe 91a and pipe 93a and is discharged.

[0362] 28(b), a rinse liquid is supplied to the front surface Wa and back surface Wb of the substrate W, and the front surface Wa and back surface Wb of the substrate W are treated with the rinse liquid. The rinse liquid supply unit 40 supplies the rinse liquid to the front surface Wa of the rotating substrate W. The back surface processing liquid supply unit 50 supplies the rinse liquid to the back surface Wb of the rotating substrate W. Here, the first cup 81 collects the rinse liquid that splashes as the substrate W rotates.

[0363] In the drainage mechanism 90, the valve 93b is open, and the valves 92b and 95b remain closed, so that the rinse liquid collected in the first cup 81 flows through the pipe 91a and the pipe 93a and is discharged.

[0364] 29(a), a rinse liquid is supplied to the front surface Wa of the substrate W to process the front surface Wa of the substrate W with the rinse liquid, and a recovery liquid is supplied to the back surface Wb of the substrate W to process the back surface Wb of the substrate W with the recovery liquid. The rinse liquid supply unit 40 supplies the rinse liquid to the front surface Wa of the rotating substrate W. The back surface processing liquid supply unit 50 supplies the recovery liquid to the back surface Wb of the substrate W.

[0365] In the drainage mechanism 90, the valve 93b is open, and the valves 92b and 95b remain closed, so that the rinse liquid and recovery liquid collected in the first cup 81 flow through the pipes 91a and 93a and are discharged.

[0366] 29(b), the processing liquid is supplied to the front surface Wa of the substrate W to process the front surface Wa of the substrate W. The shielding member 60 supplies the processing liquid to the front surface Wa of the rotating substrate W. The back surface processing liquid supply unit 50 stops supplying the processing liquid to the back surface Wb of the substrate W.

[0367] Here, the first cup 81 moves from the upper position to the lower position, and the second cup 82 is located at the upper position. Therefore, the second cup 82 faces the side of the substrate W. The second cup 82 collects the processing liquid that splashes as the substrate W rotates.

[0368] In the drainage mechanism 90, the valve 95b is opened and the valves 92b and 93b are closed, so that the processing liquid collected in the second cup 82 flows through the pipe 91b and the pipe 95a and is discharged.

[0369] 30, an inert gas is supplied to the front surface Wa of the substrate W to blow off the processing liquid on the front surface Wa of the substrate W. The shielding member 60 supplies the inert gas to the front surface Wa of the rotating substrate W. The back surface processing liquid supply unit 50 continues to stop supplying the processing liquid to the back surface Wb of the substrate W. At this time, the substrate holding unit 20 may increase the rotation speed of the substrate W.

[0370] Here, the second cup 82 remains in the upper position. The second cup 82 collects the processing liquid that splashes as the substrate W rotates.

[0371] In the drainage mechanism 90, the valve 95b is open, and the valves 92b and 93b remain closed, so that the processing liquid collected in the second cup 82 flows through the pipe 91b and the pipe 95a and is discharged.

[0372] Thereafter, the shielding member 60 stops the supply of the inert gas, and the substrate holder 20 stops the rotation of the substrate W. In this manner, the substrate W is dried. Thereafter, the substrate W is carried out from the chamber 11.

[0373] The substrate processing apparatus 100 of this embodiment alternately processes the front surface Wa of the substrate W with the first chemical liquid, the second chemical liquid, and the rinse liquid. According to this embodiment, a recovery liquid is supplied to the back surface Wb of the substrate W during at least a part of the period in which the rinse liquid is supplied to the front surface Wa of the substrate W. Therefore, the substrate processing apparatus 100 of this embodiment can reduce the amount of new processing liquid used.

[0374] 29(b), the valve 93b is closed when the shielding member 60 supplies the processing liquid to the front surface Wa of the substrate W, but the valve 93b, through which the rinsing liquid and recovery liquid collected in the first cup 81 flow, may remain open when the shielding member 60 supplies the processing liquid to the front surface Wa of the substrate W. This allows the rinsing liquid and recovery liquid collected in the first cup 81 to be discharged even when the shielding member 60 supplies the processing liquid to the front surface Wa of the substrate W. The valve 93b may be open for a predetermined time from the start of the period during which the shielding member 60 supplies the processing liquid to the front surface Wa of the substrate W, and may be closed after the predetermined time has elapsed.

[0375] 26 to 30, the cups 80 include the first cup 81 and the second cup 82, but this embodiment is not limited to this. The cups 80 may include three or more cups.

[0376] Next, a substrate processing apparatus 100 according to this embodiment will be described with reference to Figures 1 to 31. Figure 31 is a schematic diagram of the substrate processing apparatus 100 according to this embodiment. The substrate processing unit 10 in Figure 31 has the same configuration as the substrate processing apparatus 100 shown in Figure 26, except that the cup 80 further includes a third cup 83 in addition to the first cup 81 and the second cup 82, and therefore, redundant description will be omitted to avoid redundancy.

[0377] As shown in FIG. 31, the cup 80 has a first cup 81, a second cup 82, and a third cup 83. The third cup 83 is located radially outward of the substrate W relative to the second cup 82. The first cup 81 to the third cup 83 each move up and down in the vertical direction. The first cup 81 to the third cup 83 move up to an upper position located to the side of the substrate W. The first cup 81 to the third cup 83 move down to a lower position located diagonally below the substrate W. The first cup 81 to the third cup 83 collect liquid splashed from the substrate W.

[0378] The third cup 83 is positioned above and overlaps the second cup 82. Therefore, when the second cup 82 is lowered, the third cup 83 can be lowered to the position where the second cup 82 is lowered.

[0379] The drainage mechanism 90 discharges the chemical liquid, rinse liquid, and processing liquid collected in the cups 80 to the outside of the chamber 11. The drainage mechanism 90 has a pipe 91a for discharging the processing liquid collected in the first cup 81, a pipe 91b for discharging the processing liquid collected in the second cup 82, and a pipe 91c for discharging the processing liquid collected in the third cup 83. One end of the pipe 91a is connected to the bottom of the first cup 81. One end of the pipe 91b is connected to the bottom of the second cup 82. One end of the pipe 91c is connected to the third cup 83.

[0380] In the drainage mechanism 90, the pipe 92a is connected to the pipe 91a, the pipe 93a is connected to the pipe 91b, and the pipe 95a is connected to the pipe 91c.

[0381] For example, the first cup 81 is positioned vertically above and to the side of the substrate W during the period when the first chemical liquid supply unit 30a supplies the first chemical liquid to the substrate W. At this time, the second cup 82 is also positioned above, similar to the first cup 81.

[0382] Furthermore, the first cup 81 is positioned to the side of the substrate W during the period when the rinse liquid supply unit 40 supplies the rinse liquid to the substrate W. In this case, the first cup 81 collects the first chemical liquid and the rinse liquid that are scattered as the substrate W rotates.

[0383] Thereafter, when the period during which the rinsing liquid supply unit 40 supplies the rinsing liquid to the substrate W ends, the first cup 81 descends vertically downward from the side of the substrate W. In this case, the second cup 82 is positioned on the side of the substrate W.

[0384] The second cup 82 is positioned to the side of the substrate W during the period when the second chemical liquid supply unit 30b and the rinsing liquid supply unit 40 respectively supply the second chemical liquid and the rinsing liquid to the substrate W. The second cup 82 is also positioned to the side of the substrate W during the supply of the recovery liquid to the substrate W. In this case, the second cup 82 collects the second chemical liquid, the rinsing liquid, and the recovery liquid that are scattered as the substrate W rotates.

[0385] Thereafter, when the shielding member 60 shields the front surface Wa of the substrate W and starts supplying the processing liquid to the substrate W, the second cup 82 descends vertically downward from the side of the substrate W, and the third cup 83 is positioned on the side of the substrate W during the period when the shielding member 60 is supplying the processing liquid to the substrate W. Thereafter, the third cup 83 is positioned on the side of the substrate W during the period when the shielding member 60 is supplying the inert gas to the substrate W. The third cup 83 collects the processing liquid that is scattered as the substrate W rotates. When the period when the shielding member 60 is supplying the inert gas to the substrate W ends, the third cup 83 descends vertically downward from the side of the substrate W.

[0386] The substrate processing apparatus 100 of this embodiment alternately processes the front surface Wa of the substrate W with the first chemical liquid, the second chemical liquid, and the rinse liquid. According to this embodiment, a recovery liquid is supplied to the back surface Wb of the substrate W during at least a part of the period in which the rinse liquid is supplied to the front surface Wa of the substrate W. Therefore, the substrate processing apparatus 100 of this embodiment can reduce the amount of new processing liquid used.

[0387] Next, the substrate processing apparatus 100 of this embodiment will be described with reference to Figures 1 to 34. Figures 32(a) to 34 are schematic diagrams showing the flow of the substrate processing apparatus 100 of this embodiment. Figures 32(a) to 34 are similar to the flow of the substrate processing apparatus 100 described above with reference to Figures 27(a) to 30, except that the cup 80 further has a third cup 83 in addition to the first cup 81 and the second cup 82, and therefore, redundant explanations will be omitted to avoid redundancy.

[0388] 32(a), a first chemical liquid is supplied to the front surface Wa and back surface Wb of the substrate W, and the front surface Wa and back surface Wb of the substrate W are treated with the first chemical liquid. The first chemical liquid supply unit 30a supplies the first chemical liquid to the front surface Wa of the rotating substrate W. The back surface processing liquid supply unit 50 supplies the first chemical liquid to the back surface Wb of the rotating substrate W.

[0389] Here, the first cup 81 to the third cup 83 are all located at the upper position. Therefore, the first cup 81 faces the side of the substrate W. The first cup 81 collects the first chemical liquid that splashes as the substrate W rotates.

[0390] In drainage mechanism 90, valve 92b is open, while valves 93b and 95b are closed. Therefore, the first chemical liquid collected in first cup 81 flows through pipes 91a and 92a and is discharged.

[0391] 32(b), a rinse liquid is supplied to the front surface Wa and back surface Wb of the substrate W, and the front surface Wa and back surface Wb of the substrate W are treated with the rinse liquid. The rinse liquid supply unit 40 supplies the rinse liquid to the front surface Wa of the rotating substrate W. The back surface processing liquid supply unit 50 supplies the rinse liquid to the back surface Wb of the rotating substrate W. Here, the first cup 81 collects the rinse liquid that splashes as the substrate W rotates.

[0392] In the drainage mechanism 90, the valve 92b is open, and the valves 93b and 95b remain closed, so that the rinse liquid collected in the first cup 81 flows through the pipes 91a and 92a and is discharged.

[0393] 32(c), the second chemical liquid is supplied to the front surface Wa and back surface Wb of the substrate W, and the front surface Wa and back surface Wb of the substrate W are treated with the second chemical liquid. The second chemical liquid supply unit 30b supplies the second chemical liquid to the front surface Wa of the rotating substrate W. The back surface processing liquid supply unit 50 supplies the second chemical liquid to the back surface Wb of the rotating substrate W. Here, the first cup 81 collects the second chemical liquid that splashes as the substrate W rotates.

[0394] Here, the first cup 81 moves from the upper position to the lower position, and the second cup 82 and the third cup 83 are both located at the upper positions. Therefore, the second cup 82 faces the side of the substrate W. The second cup 82 collects the second chemical liquid that splashes as the substrate W rotates.

[0395] In drainage mechanism 90, valve 93b is opened, while valves 92b and 95b are closed, so that the second chemical liquid collected in second cup 82 flows through pipe 91b and pipe 93a and is discharged.

[0396] 33(a), a rinse liquid is supplied to the front surface Wa and back surface Wb of the substrate W, and the front surface Wa and back surface Wb of the substrate W are treated with the rinse liquid. The rinse liquid supply unit 40 supplies the rinse liquid to the front surface Wa of the rotating substrate W. The back surface processing liquid supply unit 50 supplies the rinse liquid to the back surface Wb of the rotating substrate W. Here, the second cup 82 collects the rinse liquid that splashes as the substrate W rotates.

[0397] In the drainage mechanism 90, the valve 93b is open, and the valves 92b and 95b remain closed, so that the rinse liquid collected in the second cup 82 flows through the pipe 91b and the pipe 93a and is discharged.

[0398] 33(b), a rinse liquid is supplied to the front surface Wa of the substrate W to process the front surface Wa of the substrate W with the rinse liquid, and a recovery liquid is supplied to the back surface Wb of the substrate W to process the back surface Wb of the substrate W with the recovery liquid. The rinse liquid supply unit 40 continues to supply the rinse liquid to the front surface Wa of the rotating substrate W. The back surface processing liquid supply unit 50 supplies the recovery liquid to the back surface Wb of the substrate W.

[0399] In the drainage mechanism 90, the valve 93b is open, and the valves 92b and 95b remain closed, so that the rinse liquid and recovery liquid collected in the second cup 82 flow through the pipe 91b and the pipe 93a and are discharged.

[0400] 33(c), the processing liquid is supplied to the front surface Wa of the substrate W, and the front surface Wa of the substrate W is processed with the processing liquid. The shielding member 60 supplies the processing liquid to the front surface Wa of the rotating substrate W. The back surface processing liquid supply unit 50 stops supplying the processing liquid to the back surface Wb of the substrate W.

[0401] Here, the second cup 82 moves from the upper position to the lower position, and the third cup 83 is located at the upper position. Therefore, the third cup 83 faces the side of the substrate W. The third cup 83 collects the processing liquid that splashes as the substrate W rotates.

[0402] In the drainage mechanism 90, the valve 95b is opened and the valves 92b and 93b are closed, so that the processing liquid collected in the third cup 83 flows through the pipe 91c and the pipe 95a and is discharged.

[0403] 34, an inert gas is supplied to the front surface Wa of the substrate W to blow off the processing liquid on the front surface Wa of the substrate W. The shielding member 60 supplies the inert gas to the front surface Wa of the rotating substrate W. The back surface processing liquid supply unit 50 continues to stop supplying the processing liquid to the back surface Wb of the substrate W. At this time, the substrate holding unit 20 may increase the rotation speed of the substrate W.

[0404] Here, the third cup 83 remains in the upper position. The third cup 83 collects the processing liquid that splashes as the substrate W rotates.

[0405] In the drainage mechanism 90, the valve 95b is open, and the valves 92b and 93b remain closed, so that the processing liquid collected in the third cup 83 flows through the pipe 91c and the pipe 95a and is discharged.

[0406] Thereafter, the shielding member 60 stops the supply of the inert gas, and the substrate holder 20 stops the rotation of the substrate W. In this manner, the substrate W is dried. Thereafter, the substrate W is carried out from the chamber 11.

[0407] The substrate processing apparatus 100 of this embodiment alternately processes the front surface Wa of the substrate W with the first chemical liquid, the second chemical liquid, and the rinse liquid. According to this embodiment, a recovery liquid is supplied to the back surface Wb of the substrate W during at least a part of the period in which the rinse liquid is supplied to the front surface Wa of the substrate W. Therefore, the substrate processing apparatus 100 of this embodiment can reduce the amount of new processing liquid used.

[0408] The embodiments of the present invention have been described above with reference to the drawings. However, the present invention is not limited to the above embodiments and can be embodied in various forms without departing from the spirit and scope of the present invention. Furthermore, various inventions can be formed by appropriately combining multiple components disclosed in the above embodiments. For example, some components may be omitted from all components shown in the embodiments. Furthermore, components from different embodiments may be appropriately combined. The drawings mainly show each component in a schematic manner to facilitate understanding. The thickness, length, number, spacing, etc. of each component shown in the drawings may differ from the actual thickness, length, number, spacing, etc. of each component shown in the above embodiments. Furthermore, the materials, shapes, dimensions, etc. of each component shown in the above embodiments are merely examples and are not particularly limited. Various modifications are possible within a scope that does not substantially deviate from the effects of the present invention.

[0409] In the substrate processing apparatus 100 described above, the front surface Wa of the substrate W faces vertically upward and the back surface Wb of the substrate W faces vertically downward, but this embodiment is not limited to this. The front surface Wa of the substrate W may face vertically downward and the back surface Wb of the substrate W may face vertically upward. In this case, the recovery liquid is supplied to the back surface Wb of the substrate W facing vertically upward.

[0410] 1 , the collecting liquid storage tank 210 is disposed in the processing liquid cabinet 110, but this embodiment is not limited to this. The collecting liquid storage tank 210 may be disposed in a location different from the processing liquid cabinet 110. For example, the collecting liquid storage tank 210 may be disposed in the processing liquid box 120. Alternatively, the collecting liquid storage tank 210 may be disposed in the chamber 11. [Industrial Applicability]

[0411] The present invention is suitably used in a substrate processing apparatus and a substrate processing method. [Explanation of symbols]

[0412] 10. Substrate Processing Unit 11 Chambers 20 Board holding part 30 Chemical supply unit 40 Rinse liquid supply unit 50 Back surface processing liquid supply unit 54 Chemical supply unit 56 Rinse liquid supply unit 58 Recovery liquid supply unit 80 cups 100 Substrate processing apparatus 101 Control device 102 Control section 104 Storage section 110 Processing liquid cabinet 120 Processing liquid box 210 Recovered liquid storage tank W substrate

Claims

1. a chamber containing a substrate having a surface on which a device is provided and a back surface opposite the surface; a substrate holder that holds the substrate in the chamber; a chemical solution supply unit that supplies a chemical solution to the surface of the substrate held by the substrate holder; a rinse liquid supply unit that supplies a rinse liquid to the surface of the substrate held by the substrate holder; a recovered liquid storage tank for storing the recovered liquid; a back surface processing liquid supply unit that supplies the recovery liquid stored in the recovery liquid storage tank to the back surface of the substrate; A substrate processing apparatus comprising:

2. The substrate processing apparatus according to claim 1 , further comprising a control unit that determines whether or not the liquid is to be recovered into the recovery liquid storage tank.

3. a reservoir tank for storing a liquid; a heater for heating the liquid flowing from the reservoir; a temperature measuring unit that measures the temperature of the liquid heated by the heater; Furthermore, The substrate processing apparatus according to claim 2 , wherein the control unit determines whether or not to recover the liquid heated by the heater into the recovery liquid storage tank based on the temperature measured by the temperature measurement unit.

4. an ozone gas generator that generates ozone gas; an ozone gas dissolution tank for dissolving the ozone gas generated in the ozone gas generator into a liquid to produce an ozone liquid; a concentration measuring unit for measuring the ozone concentration of the ozone liquid generated in the ozone gas dissolution tank; Furthermore, 3. The substrate processing apparatus according to claim 2, wherein the control unit determines whether or not the ozone liquid generated in the ozone gas dissolution tank is to be recovered in the recovered liquid storage tank based on the ozone concentration measured by the concentration measurement unit.

5. the chemical supply unit includes a chemical storage tank that stores the chemical; 3. The substrate processing apparatus according to claim 1, wherein the collected liquid storage tank stores at least a part of the cleaning liquid used to clean the chemical liquid storage tank as the collected liquid.

6. a cup for collecting the processing liquid splashed from the substrate held by the substrate holder; a drainage pipe connecting the cup and the collected liquid storage tank; a chamber cleaning pipe disposed within the chamber and discharging a cleaning liquid for cleaning the inside of the chamber; Furthermore, The substrate processing apparatus according to claim 1 , wherein the collected liquid storage tank stores at least a part of the cleaning liquid discharged from the chamber cleaning pipe as the collected liquid.

7. The rinse liquid supply unit includes: a rinse liquid pipe through which the rinse liquid flows; a valve provided in the rinse liquid pipe for adjusting the flow rate of the rinse liquid flowing through the rinse liquid pipe; and The substrate processing apparatus includes: a branch pipe connected to the rinse liquid pipe at a location downstream of the valve, through which the rinse liquid flows even when the valve is closed; The substrate processing apparatus according to claim 1 , wherein the collected liquid storage tank stores the rinse liquid that has flowed through the branch pipe as the collected liquid.

8. supplying a chemical solution to a surface of a substrate having a surface on which a device is provided and a back surface located opposite to the surface; supplying a rinse liquid to the surface of the substrate after supplying the chemical liquid to the surface of the substrate; supplying the recovered liquid from a recovery liquid storage tank that stores the recovered liquid onto the back surface of the substrate; A substrate processing method comprising:

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