Substrate processing device and substrate processing method

Abstract

To reduce the amount of use of new process liquid.SOLUTION: A substrate processing device (100) includes a chamber (11) that accommodates a substrate (W) including a front surface (Wa) where a device is provided and a back surface (Wb) existing on the opposite side of the front surface (Wa), a substrate holding part (20) that holds the substrate (W) in the chamber (11), a chemical liquid supply part (30) that supplies chemical liquid to the front surface (Wa) of the substrate (W) held by the substrate holding part (20), a rinse liquid supply part (40) that supplies rinse liquid to the front surface (Wa) of the substrate (W) held by the substrate holding part (20), a cup (80) that collects the rinse liquid scattered from the substrate (W) held by the substrate holding part (20), a recovery liquid storage tank (210) that stores the rinse liquid collected in the cup (80) as recovery liquid, and a back surface process liquid supply part (50) that supplies the recovery liquid stored in the recovery liquid storage tank (210) to the back surface (Wb) of the substrate (W) held by the substrate holding part (20).SELECTED DRAWING: Figure 2

Description

[Technical Field]

[0001] The present invention relates to a substrate processing apparatus and a substrate processing method. [Background technology]

[0002] 2. Description of the Related Art Substrate processing apparatuses are known that process substrates using a processing liquid, and are suitable for use in processing semiconductor substrates.

[0003] Typically, a substrate processing apparatus processes a substrate with a chemical solution, then supplies a rinse solution to the substrate to clean the chemically processed substrate. In some substrate processing apparatuses, chemical and rinse solutions are supplied not only to the front surface of the substrate but also to the back surface of the substrate (see Patent Document 1). In the substrate processing apparatus of Patent Document 1, after supplying the chemical and rinse solutions to the front and back surfaces of the substrate, the substrate is dried. Then, infrared light emitted from the processing solution adhering to the back surface of the substrate passes through the substrate and is received by a light-receiving section of a detection unit, thereby detecting remaining liquid on the back surface of the substrate. At this time, the processing solution splashed from the substrate is collected in a recovery cup, and the collected processing solution is discharged to the outside of the processing unit through a drain outlet at the bottom of the recovery cup. In the substrate processing apparatus of Patent Document 1, if any liquid remains on the back surface of the substrate, a recovery rinse process is performed to eliminate the remaining liquid on the back surface of the substrate. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] Japanese Patent Application Publication No. 2019-125634 Summary of the Invention [Problem to be solved by the invention]

[0005] In recent years, in order to reduce the environmental impact, reduction in resources required for substrate processing has been considered. However, in the substrate processing apparatus of Patent Document 1, there is a risk that the amount of new processing liquid used increases when processing a substrate.

[0006] The present invention has been made in view of the above-mentioned problems, and an object of the present invention is to provide a substrate processing apparatus and a substrate processing method that can reduce the amount of new processing liquid used. [Means for solving the problem]

[0007] According to one aspect of the present invention, a substrate processing apparatus includes a chamber for accommodating a substrate having a surface on which a device is provided and a back surface opposite the front surface, a substrate holding unit for holding the substrate within the chamber, a chemical liquid supply unit for supplying a chemical liquid to the front surface of the substrate held by the substrate holding unit, a rinse liquid supply unit for supplying a rinse liquid to the front surface of the substrate held by the substrate holding unit, a cup for collecting the rinse liquid scattered from the substrate held by the substrate holding unit, a recovery liquid storage tank for storing the rinse liquid collected in the cup as a recovery liquid, and a back surface processing liquid supply unit for supplying the recovery liquid stored in the recovery liquid storage tank to the back surface of the substrate held by the substrate holding unit.

[0008] In one embodiment, the substrate processing apparatus further includes a pipe that connects the cup to the recovery liquid storage tank and through which the rinse liquid collected in the cup flows.

[0009] In one embodiment, the back surface processing liquid supply unit supplies the recovery liquid to the back surface of the substrate while the rinse liquid supply unit supplies the rinse liquid to the front surface of the substrate.

[0010] In one embodiment, during a period in which the rinse liquid supply unit supplies the rinse liquid to the front surface of the substrate, the back surface processing liquid supply unit supplies the rinse liquid to the back surface of the substrate and then supplies the recovery liquid.

[0011] In one embodiment, while the rinse liquid supply unit supplies the rinse liquid to the front surface of the substrate, the recovery liquid storage tank recovers the rinse liquid supplied to the substrate as a recovery liquid, and the back surface processing liquid supply unit supplies the recovery liquid to the back surface of the substrate.

[0012] In one embodiment, while the chemical liquid supply unit supplies the chemical liquid to the front surface of the substrate and while the rinse liquid supply unit supplies the rinse liquid to the front surface of the substrate, the back surface processing liquid supply unit supplies the recovery liquid to the back surface of the substrate.

[0013] According to another aspect of the present invention, a substrate processing method includes the steps of: using a substrate holding unit to hold a substrate having a surface on which a device is provided and a back surface opposite the surface; supplying a chemical solution to the front surface of the substrate held by the substrate holding unit; after supplying the chemical solution to the front surface of the substrate, supplying a rinse liquid to the front surface of the substrate held by the substrate holding unit; recovering the rinse liquid supplied to the substrate in a recovery liquid storage tank as a recovery liquid; and supplying the recovery liquid from the recovery liquid storage tank to the back surface of the substrate held by the substrate holding unit. [Effects of the Invention]

[0014] According to the present invention, the amount of new processing liquid used can be reduced. [Brief explanation of the drawings]

[0015] [Figure 1] 1 is a schematic plan view of a substrate processing apparatus according to an embodiment of the present invention; [Figure 2] 1 is a schematic diagram of a substrate processing apparatus according to an embodiment of the present invention; [Figure 3] 1 is a block diagram of a substrate processing apparatus according to an embodiment of the present invention; [Figure 4] FIG. 2 is a flow chart of a substrate processing method according to the present embodiment. [Figure 5] 1(a) to 1(d) are schematic diagrams showing the flow of the substrate processing apparatus of this embodiment. [Figure 6] 1(a) to 1(c) are schematic diagrams showing the flow of the substrate processing apparatus of the present embodiment. [Figure 7] 1 is a schematic diagram of a substrate processing apparatus according to an embodiment of the present invention; [Figure 8]1(a) to 1(c) are schematic diagrams showing the flow of the substrate processing apparatus of the present embodiment. [Figure 9] 1 is a schematic diagram of a substrate processing apparatus according to an embodiment of the present invention; [Figure 10] 1(a) to 1(c) are schematic diagrams showing the flow of the substrate processing apparatus of the present embodiment. [Figure 11] 1(a) to 1(c) are schematic diagrams showing the flow of the substrate processing apparatus of the present embodiment. [Figure 12] 1 is a schematic diagram of a substrate processing apparatus according to an embodiment of the present invention; [Figure 13] 1A and 1B are schematic diagrams showing the flow of the substrate processing apparatus of the present embodiment. [Figure 14] 1A and 1B are schematic diagrams showing the flow of the substrate processing apparatus of the present embodiment. [Figure 15] 1A and 1B are schematic diagrams showing the flow of the substrate processing apparatus of the present embodiment. [Figure 16] 1A and 1B are schematic diagrams showing the flow of the substrate processing apparatus of the present embodiment. [Figure 17] 1 is a schematic diagram of a substrate processing apparatus according to an embodiment of the present invention; [Figure 18] 1(a) to 1(c) are schematic diagrams showing the flow of the substrate processing apparatus of the present embodiment. [Figure 19] 1(a) to 1(c) are schematic diagrams showing the flow of the substrate processing apparatus of the present embodiment. [Figure 20] FIG. 2 is a schematic diagram showing a flow of the substrate processing apparatus according to the present embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0016] Hereinafter, embodiments of a substrate processing apparatus and a substrate processing method according to the present invention will be described with reference to the drawings. In the drawings, identical or corresponding parts are designated by the same reference numerals, and description thereof will not be repeated. In this specification, to facilitate understanding of the invention, mutually orthogonal X-, Y-, and Z-axes may be described. Typically, the X- and Y-axes are parallel to the horizontal direction, and the Z-axis is parallel to the vertical direction.

[0017] First, an embodiment of a substrate processing apparatus 100 according to the present invention will be described with reference to Fig. 1. Fig. 1 is a schematic plan view of the substrate processing apparatus 100 of this embodiment.

[0018] The substrate processing apparatus 100 processes a substrate W. The substrate processing apparatus 100 processes the substrate W by performing at least one of etching, surface treatment, property imparting, treatment film formation, removal of at least a portion of a film, and cleaning on the substrate W.

[0019] The substrate W is used as a semiconductor substrate. The substrate W includes a semiconductor wafer. For example, the substrate W has a substantially circular disk shape. Here, the substrate processing apparatus 100 processes the substrates W one by one.

[0020] 1, the substrate processing apparatus 100 includes a plurality of substrate processing units 10, a processing liquid cabinet 110, a processing liquid box 120, a plurality of load ports LP, an indexer robot IR, a center robot CR, and a controller 101. The controller 101 controls the load ports LP, the indexer robot IR, and the center robot CR. The controller 101 may also control each component within the substrate processing units 10, the processing liquid cabinet 110, and the processing liquid box 120. The controller 101 includes a control unit 102 and a memory unit 104.

[0021] Each load port LP accommodates a plurality of stacked substrates W. The indexer robot IR transports the substrates W between the load port LP and the center robot CR. The center robot CR transports the substrates W between the indexer robot IR and the substrate processing units 10. Each substrate processing unit 10 processes the substrates W by discharging a processing liquid onto the substrate W. The processing liquid includes a chemical liquid, a rinse liquid, a cleaning liquid, a removal liquid, and / or a water repellent agent. The processing liquid cabinet 110 contains the processing liquid. The processing liquid cabinet 110 may contain a gas.

[0022] Specifically, the substrate processing units 10 form a plurality of towers TW (four towers TW in FIG. 1) arranged to surround the center robot CR in a plan view. Each tower TW includes a plurality of substrate processing units 10 stacked vertically (three substrate processing units 10 in FIG. 1). The processing liquid boxes 120 correspond to the plurality of towers TW, respectively. The liquid in the processing liquid cabinet 110 is supplied to all of the substrate processing units 10 included in the tower TW corresponding to the processing liquid box 120 via one of the processing liquid boxes 120. Furthermore, the gas in the processing liquid cabinet 110 is supplied to all of the substrate processing units 10 included in the tower TW corresponding to the processing liquid box 120 via one of the processing liquid boxes 120.

[0023] In the substrate processing apparatus 100, a boundary wall is arranged between an area where the center robot CR and the substrate processing units 10 are installed and an area where the processing liquid cabinets 110 are installed.

[0024] Typically, the processing liquid cabinet 110 has a reservoir (tank) for preparing the processing liquid. The processing liquid cabinet 110 may have a reservoir for one type of processing liquid or may have reservoirs for multiple types of processing liquid. The processing liquid cabinet 110 also has a pump, a valve, a heater, and / or a filter for circulating the processing liquid.

[0025] The processing liquid cabinet 110 includes a chemical liquid cabinet 110A and a rinse liquid cabinet 110B. For example, the chemical liquid cabinet 110A and the rinse liquid cabinet 110B are disposed apart from each other. Alternatively, the chemical liquid cabinet 110A and the rinse liquid cabinet 110B may be disposed adjacent to each other.

[0026] For example, the chemical liquid cabinet 110A supplies a chemical liquid to the processing liquid box 120. The rinsing liquid cabinet 110B supplies a rinsing liquid to the processing liquid box 120. The processing liquid box 120 supplies the chemical liquid and the rinsing liquid to the substrate processing unit 10.

[0027] Here, the processing liquid cabinet 110 further includes a collected liquid cabinet 110C. The collected liquid cabinet 110C stores collected liquid. For example, the collected liquid cabinet 110C collects liquid that has been used once as the collected liquid. The collected liquid cabinet 110C also supplies the collected liquid to the processing liquid box 120.

[0028] The collected liquid cabinet 110C has a collected liquid storage tank (tank) 210 that stores liquid that has been used once as collected liquid. The collected liquid stored in the collected liquid storage tank (tank) 210 is supplied to the processing liquid box 120. In this way, the processing liquid cabinet 110 has the collected liquid cabinet 110C.

[0029] The processing liquid cabinet 110 may have a collection liquid reservoir 210 for storing one type of collection liquid, or may have collection liquid reservoirs 210 for storing multiple types of collection liquid. The processing liquid cabinet 110 also has a pump, a valve, a heater, and / or a filter for circulating the collection liquid.

[0030] The control device 101 controls various operations of the substrate processing apparatus 100. The control device 101 causes the substrate processing unit 10 to process the substrate W.

[0031] The control device 101 includes a control unit 102 and a storage unit 104. The control unit 102 has a processor. The control unit 102 has, for example, a central processing unit (CPU). Alternatively, the control unit 102 may have a general-purpose computer.

[0032] The storage unit 104 stores data and computer programs. The data includes recipe data. The recipe data includes information indicating a plurality of recipes. Each of the plurality of recipes defines the processing content and processing procedure for the substrate W.

[0033] The storage unit 104 includes a main storage device and an auxiliary storage device. The main storage device is, for example, a semiconductor memory. The auxiliary storage device is, for example, a semiconductor memory and / or a hard disk drive. The storage unit 104 may include removable media. The control unit 102 executes computer programs stored in the storage unit 104 to perform substrate processing operations.

[0034] Next, the substrate processing unit 10 in the substrate processing apparatus 100 of this embodiment will be described with reference to Fig. 2. Fig. 2 is a schematic diagram of the substrate processing apparatus 100.

[0035] The substrate processing apparatus 100 includes a substrate processing unit 10, a chamber 11, a substrate holder 20, a chemical liquid supply unit 30, a rinse liquid supply unit 40, a back surface processing liquid supply unit 50, a cup 80, a drainage mechanism 90, and a recovery liquid storage tank 210.

[0036] The chamber 11 is substantially box-shaped and has an internal space. The chamber 11 accommodates the substrates W. Here, the substrate processing apparatus 100 is a single-wafer type that processes the substrates W one by one, and the chamber 11 accommodates the substrates W one by one. The substrates W are accommodated in the chamber 11 and processed in the chamber 11. The chamber 11 accommodates at least a portion of each of the substrate holder 20, the chemical liquid supply unit 30, the rinse liquid supply unit 40, the back surface processing liquid supply unit 50, and the cup 80.

[0037] The substrate holding part 20 holds the substrate W. The substrate W has a front surface Wa and a back surface Wb. The front surface Wa and back surface Wb of the substrate W are each the main surfaces of the substrate W. Devices are provided on the front surface Wa of the substrate W. The front surface Wa of the substrate W is the surface on which devices on which electronic circuits are formed are provided, while the back surface Wb of the substrate W is the surface on which such devices are not provided. For example, the front surface Wa of the substrate W is provided with a laminated structure in which recesses are formed.

[0038] The substrate holding unit 20 holds the substrate W horizontally. The substrate holding unit 20 rotates the substrate W while holding it. Here, the front surface Wa of the substrate W faces vertically upward, and the back surface Wb of the substrate W faces vertically downward. However, the front surface Wa of the substrate W may face vertically downward, and the back surface Wb of the substrate W may face vertically upward. In this way, the substrate holding unit 20 holds the substrate W horizontally so that one of the front surface Wa and the back surface Wb of the substrate W faces upward, and the other faces downward.

[0039] For example, the substrate holding unit 20 may be a clamping type that clamps the edge of the substrate W. Alternatively, the substrate holding unit 20 may have any mechanism that holds the substrate W from the back surface Wb. For example, the substrate holding unit 20 may be a vacuum type. In this case, the substrate holding unit 20 holds the substrate W horizontally by adsorbing the central portion of the back surface Wb of the substrate W, which is the surface on which devices are not formed, to its upper surface. Alternatively, the substrate holding unit 20 may be a combination of a clamping type that brings multiple chuck pins into contact with the peripheral edge surface of the substrate W, and a vacuum type.

[0040] For example, the substrate holder 20 includes a spin base 21, a chuck member 22, a shaft 23, an electric motor 24, a housing 25, and a nozzle 51. The chuck member 22 is provided on the spin base 21. The chuck member 22 chucks the substrate W. Typically, the spin base 21 is provided with a plurality of chuck members 22.

[0041] The shaft 23 is a hollow shaft. The shaft 23 extends vertically along the rotation axis Ax. The spin base 21 is coupled to the upper end of the shaft 23. The substrate W is placed above the spin base 21.

[0042] The spin base 21 is disk-shaped and supports the substrate W horizontally. The shaft 23 extends downward from the center of the spin base 21. The electric motor 24 applies a rotational force to the shaft 23. The electric motor 24 rotates the shaft 23 in a rotational direction, thereby rotating the substrate W and the spin base 21 around the rotation axis Ax. The housing 25 surrounds the shaft 23 and the electric motor 24.

[0043] The chemical liquid supply unit 30 supplies a chemical liquid to the substrate W. Typically, the chemical liquid supply unit 30 supplies the chemical liquid to the front surface Wa of the substrate W. At least a part of the chemical liquid supply unit 30 is housed in the chamber 11.

[0044] The chemical solution contains hydrofluoric acid. For example, the hydrofluoric acid may be heated to 40°C or higher and 70°C or lower, or 50°C or higher and 60°C or lower. However, the hydrofluoric acid does not have to be heated. The chemical solution may also contain phosphoric acid.

[0045] The chemical solution may include hydrogen peroxide. The chemical solution may also include SC1 (ammonia-hydrogen peroxide mixture), SC2 (hydrochloric acid-hydrogen peroxide mixture), or aqua regia (a mixture of concentrated hydrochloric acid and concentrated nitric acid). The chemical solution may also be diluted with a diluent.

[0046] The chemical liquid supply unit 30 includes a pipe 32, a nozzle 34, and a valve 36. The nozzle 34 is connected to the pipe 32. The chemical liquid is supplied to the pipe 32 from a supply source. The valve 36 opens and closes a flow path in the pipe 32. The nozzle 34 ejects the chemical liquid onto the front surface Wa of the substrate W.

[0047] Valve 36 adjusts the opening of pipe 32 to regulate the flow rate of the chemical solution flowing through pipe 32. Specifically, valve 36 includes a valve body (not shown) with a valve seat provided therein, a valve element that opens and closes the valve seat, and an actuator (not shown) that moves the valve element between an open position and a closed position.

[0048] The nozzle 34 may be configured to be movable relative to the substrate W. The chemical liquid supply unit 30 may further include a nozzle moving unit 38. The nozzle moving unit 38 may raise and lower the nozzle 34, or may rotate the nozzle 34 horizontally around a rotation axis. The nozzle moving unit 38 raises and lowers the nozzle 34. For example, the nozzle moving unit 38 includes a ball screw mechanism and an electric motor that provides driving force to the ball screw mechanism. The nozzle moving unit 38 also rotates the nozzle 34 horizontally. For example, the nozzle moving unit 38 includes an electric motor.

[0049] The chemical liquid supply unit 30 may include the chemical liquid cabinet 110A and the processing liquid box 120 shown in FIG.

[0050] The rinse liquid supply unit 40 supplies a rinse liquid to the substrate W. Typically, the rinse liquid is used to clean the substrate W. The rinse liquid supply unit 40 supplies the rinse liquid to the surface Wa of the substrate W. At least a portion of the rinse liquid supply unit 40 is housed in the chamber 11.

[0051] For example, the rinse liquid is used to clean the substrate W that has been treated with a chemical liquid. In one example, the rinse liquid may include any of deionized water (DIW), carbonated water, electrolytic ionized water, ozone water, ammonia water, hydrochloric acid water with a diluted concentration (for example, about 10 ppm to 100 ppm), and reduced water (hydrogen water).

[0052] The rinse liquid supply unit 40 includes a pipe 42, a nozzle 44, and a valve 46. The nozzle 44 is connected to the pipe 42. The rinse liquid is supplied to the pipe 42 from a supply source. The valve 46 opens and closes a flow path in the pipe 42. The nozzle 44 ejects the rinse liquid onto the front surface Wa of the substrate W.

[0053] The valve 46 adjusts the opening of the pipe 42 to adjust the flow rate of the rinse liquid flowing through the pipe 42. Specifically, the valve 46 may have the same configuration as the valve 36.

[0054] The nozzle 44 may be configured to be movable relative to the substrate W. The rinsing liquid supply unit 40 may further include a nozzle moving unit 48. The nozzle moving unit 48 may have a configuration similar to that of the nozzle moving unit 38.

[0055] The rinse liquid supply unit 40 may include the rinse liquid cabinet 110B and the processing liquid box 120 shown in FIG.

[0056] The back surface processing liquid supply unit 50 supplies a processing liquid to the back surface Wb of the substrate W. At least a part of the back surface processing liquid supply unit 50 is accommodated in the chamber 11.

[0057] For example, the back surface processing liquid supply unit 50 supplies a chemical liquid to the back surface Wb of the substrate W. Typically, while the chemical liquid supply unit 30 supplies a chemical liquid to the front surface Wa of the substrate W, the back surface processing liquid supply unit 50 supplies a chemical liquid to the back surface Wb of the substrate W. In one example, the back surface processing liquid supply unit 50 supplies the same type of chemical liquid as the chemical liquid supplied by the chemical liquid supply unit 30 to the back surface Wb of the substrate W.

[0058] Alternatively, the back surface processing liquid supply unit 50 supplies a rinse liquid to the substrate W. Typically, while the rinse liquid supply unit 40 supplies a rinse liquid to the front surface Wa of the substrate W, the back surface processing liquid supply unit 50 supplies a rinse liquid to the back surface Wb of the substrate W. In one example, the back surface processing liquid supply unit 50 supplies the same type of rinse liquid as the rinse liquid supplied by the rinse liquid supply unit 40 to the back surface Wb of the substrate W.

[0059] The back surface processing liquid supply unit 50 may supply a chemical liquid diluted with a dilution liquid (diluted chemical liquid) to the back surface Wb of the substrate W. Typically, while the chemical liquid supply unit 30 supplies the diluted chemical liquid to the front surface Wa of the substrate W, the back surface processing liquid supply unit 50 may supply the diluted chemical liquid to the back surface Wb of the substrate W.

[0060] In this embodiment, the back surface processing liquid supply unit 50 supplies a recovery liquid to the back surface Wb of the substrate W. Typically, the recovery liquid is a liquid obtained by recovering a processing liquid that has been used once. In one example, the recovery liquid is a liquid obtained by recovering a rinse liquid that has been used once. For example, the rinse liquid used to rinse the substrate W is recovered and used as the recovery liquid.

[0061] Typically, the substrate W is used in a microfabricated semiconductor device. For this reason, the chemical liquid or rinse liquid supplied from the supply source is a new, unused liquid, and the impurity concentration of the chemical liquid or rinse liquid supplied from the supply source is low. On the other hand, the recovery liquid may have a slightly higher impurity concentration than the chemical liquid or rinse liquid supplied from the supply source. This makes it possible to clean the back surface Wb of the substrate W and to prevent particles produced when the front surface Wa of the substrate W is treated with a chemical liquid or the like from adhering to the back surface Wb of the substrate W. However, it is also preferable that the impurity concentration of the recovery liquid be low.

[0062] For example, while the rinsing liquid supply unit 40 supplies a rinsing liquid to the front surface Wa of the substrate W, the back surface processing liquid supply unit 50 may supply a recovery liquid to the back surface Wb of the substrate W. Alternatively, while the chemical liquid supply unit 30 supplies a chemical liquid to the front surface Wa of the substrate W, the back surface processing liquid supply unit 50 may supply a recovery liquid to the back surface Wb of the substrate W. Alternatively, while the chemical liquid supply unit 30 supplies a diluted chemical liquid diluted with a dilution liquid to the front surface Wa of the substrate W, the back surface processing liquid supply unit 50 may supply a chemical liquid diluted with a recovery liquid to the back surface Wb of the substrate W.

[0063] The back surface processing liquid supply unit 50 has a nozzle 51, a pipe 52, a pipe 52c, a chemical liquid supply unit 54, a rinse liquid supply unit 56, and a recovery liquid supply unit 58. The pipe 52 is located inside the chamber 11. The pipe 52 passes vertically through the center of the shaft 23. The nozzle 51 is disposed at the end of the pipe 52. The nozzle 51 is located opposite the center of the back surface Wb of the substrate W. The pipe 52 is connected to a pipe 52c outside the chamber 11. The processing liquid to be supplied to the back surface Wb of the substrate W flows through the pipe 52c and the pipe 52. The processing liquid that has flowed through the pipe 52c and the pipe 52 is ejected from the nozzle 51 onto the back surface Wb of the substrate W.

[0064] The chemical liquid supply unit 54 supplies the chemical liquid to the rear surface Wb of the substrate W. In detail, the chemical liquid supply unit 54 supplies the chemical liquid to the rear surface Wb of the substrate W via the pipe 52c and the pipe 52.

[0065] The chemical liquid supply unit 54 includes a pipe 54a and a valve 54b. The chemical liquid is supplied to the pipe 54a from a supply source. The valve 54b opens and closes a flow path in the pipe 54a. The valve 54b adjusts the opening of the pipe 54a to regulate the flow rate of the chemical liquid flowing through the pipe 54a. Specifically, the valve 54b includes a valve body (not shown) with a valve seat provided therein, a valve element that opens and closes the valve seat, and an actuator (not shown) that moves the valve element between an open position and a closed position.

[0066] The chemical liquid that flows through the pipe 54a to the pipe 52c and the pipe 52 is discharged onto the rear surface Wb of the substrate W from the nozzle 51.

[0067] The rinse liquid supply unit 56 supplies the rinse liquid to the rear surface Wb of the substrate W. In detail, the rinse liquid supply unit 56 supplies the rinse liquid to the rear surface Wb of the substrate W via the pipe 52c and the pipe 52.

[0068] The rinse liquid supply unit 56 includes a pipe 56a and a valve 56b. The rinse liquid is supplied to the pipe 56a from a supply source. The valve 56b opens and closes a flow path in the pipe 56a. The valve 56b adjusts the opening of the pipe 56a to adjust the flow rate of the rinse liquid flowing through the pipe 56a. The valve 56b may have a configuration similar to that of the valve 54b.

[0069] The rinse liquid that flows through the pipe 56 a to the pipe 52 c and the pipe 52 is discharged onto the rear surface Wb of the substrate W from the nozzle 51 .

[0070] The recovery liquid supply unit 58 supplies the recovery liquid to the back surface Wb of the substrate W. In detail, the recovery liquid supply unit 58 supplies the recovery liquid to the back surface Wb of the substrate W via the pipe 52c and the pipe 52.

[0071] The recovery liquid supply unit 58 includes a pipe 58a and a valve 58b. The recovery liquid is supplied to the pipe 58a from a recovery liquid storage tank 210, which serves as a supply source. The valve 58b opens and closes the flow path in the pipe 58a. The valve 58b adjusts the opening of the pipe 58a to regulate the flow rate of the recovery liquid flowing through the pipe 58a. The valve 58b may have a configuration similar to that of the valve 54b.

[0072] The recovery liquid that flows through the pipe 58a to the pipe 52c and the pipe 52 is discharged onto the rear surface Wb of the substrate W from the nozzle 51.

[0073] The cup 80 moves up and down in the vertical direction. The cup 80 rises to an upper position located to the side of the substrate W. The cup 80 also descends to a lower position located diagonally below the substrate W. In FIG. 2, the cup 80 is located at the lower position. When any one of the chemical liquid, the rinse liquid, and the recovery liquid is supplied to the substrate W, the cup 80 rises to a position to the side of the substrate W.

[0074] The cup 80 collects the processing liquid splashed around the substrate W due to the rotation of the substrate W. For example, when the chemical liquid supply unit 30 supplies the chemical liquid to the rotating substrate W, the chemical liquid splashes laterally from the substrate W. In this case, the cup 80, at its upper position, collects the chemical liquid splashed laterally from the substrate W. Furthermore, when the rinsing liquid supply unit 40 supplies the rinsing liquid to the rotating substrate W, the cup 80, at its upper position, collects the rinsing liquid splashed laterally from the substrate W. Similarly, when the back surface processing liquid supply unit 50 supplies the processing liquid to the rotating substrate W, the cup 80, at its upper position, collects the processing liquid splashed laterally from the substrate W.

[0075] In this way, while any one of the chemical liquid supply unit 30, the rinse liquid supply unit 40, and the back surface processing liquid supply unit 50 supplies any one of the chemical liquid, the rinse liquid, and the processing liquid to the substrate W, the cup 80, at the upper position, collects any one of the chemical liquid, the rinse liquid, and the processing liquid that splashes sideways from the substrate W. Furthermore, when the period during which any one of the chemical liquid supply unit 30, the rinse liquid supply unit 40, and the back surface processing liquid supply unit 50 supplies any one of the chemical liquid, the rinse liquid, and the processing liquid to the substrate W ends, the cup 80 descends to a lower position located diagonally below the substrate W.

[0076] Specifically, when the chemical liquid supply unit 30 and / or the chemical liquid supply unit 54 supplies a chemical liquid to the substrate W while the substrate holding unit 20 is holding and rotating the substrate W, the rotation of the substrate W causes the chemical liquid supplied to the substrate W to splash around the substrate W. When the chemical liquid supply unit 30 and / or the chemical liquid supply unit 54 supplies the chemical liquid to the substrate W, the cup 80 is positioned above the substrate W to cover the side of the substrate W, and the cup 80 collects the chemical liquid that splashes around the substrate W due to the rotation of the substrate W. Similarly, when the rinse liquid supply unit 40 and / or the rinse liquid supply unit 56 supplies a rinse liquid to the substrate W while the substrate holding unit 20 is holding and rotating the substrate W, the rotation of the substrate W causes the rinse liquid supplied to the substrate W to splash around the substrate W. The cup 80 is positioned at an upper position covering the side of the substrate W when the rinse liquid supply unit 40 and / or the rinse liquid supply unit 56 supplies rinse liquid to the substrate W, and the cup 80 collects rinse liquid that splashes around the substrate W as the substrate W rotates.

[0077] Furthermore, when the recovering liquid supply unit 58 supplies the recovering liquid to the substrate W while the substrate holder 20 is holding and rotating the substrate W, the rotation of the substrate W causes the recovering liquid supplied to the substrate W to splash around the periphery of the substrate W. When the recovering liquid supply unit 58 supplies the recovering liquid to the substrate W, the cup 80 is located at an upper position covering the side of the substrate W, and collects the recovering liquid that splashes around the periphery of the substrate W due to the rotation of the substrate W. In this way, the cup 80 collects any of the chemical liquid, the rinse liquid, and the recovering liquid that splashes around the periphery of the substrate W due to the rotation of the substrate W.

[0078] The drainage mechanism 90 discharges the chemical liquid, rinse liquid, and / or recovery liquid collected in the cup 80. Pipes are connected to the cup 80, and the chemical liquid, rinse liquid, and / or recovery liquid collected in the cup 80 flow through the pipes and are discharged to the outside.

[0079] The drainage mechanism 90 is connected to the collected liquid storage tank 210. At least a portion of the chemical liquid, rinse liquid, and / or collected liquid collected in the cup 80 flows by the drainage mechanism 90 to the collected liquid storage tank 210 and is stored in the collected liquid storage tank 210 as the collected liquid.

[0080] The recovery liquid storage tank 210 may selectively collect the chemical liquid, rinse liquid, and / or recovery liquid collected in the cup 80. For example, the recovery liquid storage tank 210 collects the rinse liquid and / or recovery liquid collected in the cup 80. In one example, the recovery liquid storage tank 210 may not collect the rinse liquid when the particle concentration in the rinse liquid collected in the cup 80 is high, and may collect the rinse liquid when the particle concentration in the rinse liquid collected in the cup 80 becomes low. Alternatively, the recovery liquid storage tank 210 may not need to collect the recovery liquid collected in the cup 80 again. Note that the recovery liquid storage tank 210 may collect the chemical liquid collected in the cup 80.

[0081] The drainage mechanism 90 discharges the chemical liquid, rinse liquid, and processing liquid collected in the cup 80 to the outside of the chamber 11. The drainage mechanism 90 has a pipe 91 for discharging the chemical liquid, rinse liquid, and processing liquid collected in the cup 80. One end of the pipe 91 is connected to the bottom of the cup 80.

[0082] The drainage mechanism 90 further includes a pipe 92a, a valve 92b, a pipe 94a, and a valve 94b. The pipe 92a is connected to the pipe 91. The chemical liquid and rinse liquid collected in the cup 80 flow from the pipe 91 into the pipe 92a. The valve 92b opens and closes the flow path in the pipe 92a. The valve 92b adjusts the opening of the pipe 92a to regulate the flow rate of the liquid flowing through the pipe 92a. Specifically, the valve 92b includes a valve body (not shown) with a valve seat provided therein, a valve element that opens and closes the valve seat, and an actuator (not shown) that moves the valve element between an open position and a closed position.

[0083] The pipe 94a connects the pipe 91 and the collected liquid storage tank 210. The rinse liquid collected in the cup 80 flows from the pipe 91 into the pipe 94a. The valve 94b opens and closes the flow path in the pipe 94a. The valve 94b adjusts the opening of the pipe 94a to adjust the flow rate of the rinse liquid flowing through the pipe 94a. The valve 94b may have a configuration similar to that of the valve 92b.

[0084] When the valve 94b is opened, the rinse liquid collected in the cup 80 flows through the pipe 94a to the collected liquid reservoir tank 210.

[0085] As described above, the control device 101 includes the control unit 102 and the memory unit 104. The control unit 102 controls the substrate holder 20, the chemical solution supply unit 30, and / or the cup 80. In one example, the control unit 102 controls the electric motor 24, the valves 36, 46, 54b, 56b, 58b, 92b, 94b, and / or the cup 80.

[0086] The substrate processing apparatus 100 of this embodiment is suitable for use in the manufacture of semiconductor devices having semiconductors. Typically, in semiconductor devices, conductive layers and insulating layers are stacked on a substrate. The substrate processing apparatus 100 is suitable for use in cleaning and / or processing (e.g., etching, changing characteristics, etc.) the conductive layers and / or insulating layers during the manufacture of semiconductor devices.

[0087] 2, the chemical liquid supply unit 30 is capable of supplying one type of processing liquid. However, this embodiment is not limited to this. The chemical liquid supply unit 30 may supply multiple types of chemical liquid. For example, the chemical liquid supply unit 30 may be capable of sequentially supplying multiple types of chemical liquids for different purposes to the substrate W. Alternatively, the chemical liquid supply unit 30 may be capable of simultaneously supplying multiple types of chemical liquids for different purposes to the substrate W.

[0088] Next, a substrate processing apparatus 100 according to this embodiment will be described with reference to Figures 1 to 3. Figure 3 is a block diagram of the substrate processing apparatus 100.

[0089] 3 , the control device 101 controls various operations of the substrate processing apparatus 100. The control device 101 controls the indexer robot IR, the center robot CR, the substrate holding unit 20, the chemical liquid supply unit 30, the rinse liquid supply unit 40, the back surface processing liquid supply unit 50, the cup 80, and the drainage mechanism 90. Specifically, the control device 101 controls the indexer robot IR, the center robot CR, the substrate holding unit 20, the chemical liquid supply unit 30, the rinse liquid supply unit 40, the back surface processing liquid supply unit 50, the cup 80, and the drainage mechanism 90 by transmitting control signals to the indexer robot IR, the center robot CR, the substrate holding unit 20, the chemical liquid supply unit 30, the rinse liquid supply unit 40, the back surface processing liquid supply unit 50, the cup 80, and the drainage mechanism 90.

[0090] The memory unit 104 also stores computer programs and data. The data includes recipe data. The recipe data includes information indicating a plurality of recipes. Each of the plurality of recipes specifies the processing content, processing procedure, and substrate processing conditions for the substrate W. The control unit 102 executes the computer programs stored in the memory unit 104 to perform substrate processing operations.

[0091] The control unit 102 controls the indexer robot IR to transfer the substrate W by the indexer robot IR.

[0092] The control unit 102 controls the center robot CR to transfer the substrate W by the center robot CR. For example, the center robot CR receives an unprocessed substrate W and carries the substrate W into one of the plurality of chambers 11. The center robot CR also receives a processed substrate W from the chamber 11 and carries the substrate W out.

[0093] The control unit 102 controls the substrate holding unit 20 to start rotation of the substrate W, change the rotation speed, and stop rotation of the substrate W. For example, the control unit 102 can control the substrate holding unit 20 to change the rotation speed of the substrate holding unit 20. Specifically, the control unit 102 can change the rotation speed of the substrate W by changing the rotation speed of the electric motor 24 of the substrate holding unit 20.

[0094] The control unit 102 controls the valve 36 of the chemical solution supply unit 30 to switch the state of the valve 36 between an open state and a closed state. Specifically, the control unit 102 controls the valve 36 of the chemical solution supply unit 30 to open the valve 36, thereby allowing the chemical solution flowing through the pipe 32 toward the nozzle 34 to pass. The control unit 102 also controls the valve 36 of the chemical solution supply unit 30 to close the valve 36, thereby stopping the supply of the chemical solution flowing through the pipe 32 toward the nozzle 34.

[0095] The control unit 102 controls the valve 46 of the rinse liquid supply unit 40 to switch the state of the valve 46 between an open state and a closed state. Specifically, the control unit 102 controls the valve 46 of the rinse liquid supply unit 40 to open the valve 46, thereby allowing the rinse liquid flowing through the pipe 42 toward the nozzle 44. The control unit 102 also controls the valve 46 of the rinse liquid supply unit 40 to close the valve 46, thereby stopping the supply of the rinse liquid flowing through the pipe 42 toward the nozzle 44.

[0096] The control unit 102 controls the valve 54b of the chemical solution supply unit 54 to switch the state of the valve 54b between an open state and a closed state. Specifically, the control unit 102 controls the valve 54b of the chemical solution supply unit 54 to open the valve 54b, thereby allowing the chemical solution flowing through the pipe 54a, the pipe 52c, and the pipe 52 toward the nozzle 51. The control unit 102 also controls the valve 54b of the chemical solution supply unit 54 to close the valve 54b, thereby stopping the supply of the chemical solution flowing through the pipe 54a toward the nozzle 51.

[0097] The control unit 102 controls the valve 56b of the rinse liquid supply unit 56 to switch the state of the valve 56b between an open state and a closed state. Specifically, the control unit 102 controls the valve 56b of the rinse liquid supply unit 56 to open the valve 56b, thereby allowing the rinse liquid flowing through the pipe 56a, the pipe 52c, and the pipe 52 toward the nozzle 51. The control unit 102 also controls the valve 56b of the rinse liquid supply unit 56 to close the valve 56b, thereby stopping the supply of the rinse liquid flowing through the pipe 56a toward the nozzle 51.

[0098] The control unit 102 controls the valve 58b of the recovering liquid supply unit 58 to switch the state of the valve 58b between an open state and a closed state. Specifically, the control unit 102 controls the valve 58b of the recovering liquid supply unit 58 to open the valve 58b, thereby allowing the recovering liquid flowing through the pipe 58a, the pipe 52c, and the pipe 52 toward the nozzle 51. The control unit 102 also controls the valve 58b of the recovering liquid supply unit 58 to close the valve 58b, thereby stopping the supply of the recovering liquid flowing through the pipe 58a toward the nozzle 51.

[0099] The control unit 102 may control the cup 80 to move the cup 80 relative to the substrate W. Specifically, the control unit 102 moves the cup 80 to a raised position on the side of the substrate W during a period in which at least one of the chemical liquid supply unit 30, the rinse liquid supply unit 40, the chemical liquid supply unit 54, the rinse liquid supply unit 56, and the recovery liquid supply unit 58 supplies any of the chemical liquid, the rinse liquid, and the recovery liquid to the substrate W. Furthermore, the control unit 102 lowers the cup 80 vertically downward from the side of the substrate W after the period in which at least one of the chemical liquid supply unit 30, the rinse liquid supply unit 40, the chemical liquid supply unit 54, the rinse liquid supply unit 56, and the recovery liquid supply unit 58 supplies any of the chemical liquid, the rinse liquid, and the recovery liquid to the substrate W has ended.

[0100] The control unit 102 controls the valve 92b of the drainage mechanism 90 to switch the state of the valve 92b between an open state and a closed state. Specifically, the control unit 102 controls the valve 92b to open the valve 92b, thereby allowing the chemical liquid and rinse liquid flowing through the pipes 91 and 92a to pass. The control unit 102 also controls the valve 92b to close the valve 92b, thereby stopping the passage of the chemical liquid and rinse liquid flowing through the pipes 91 and 92a.

[0101] The control unit 102 controls the valve 94b of the drainage mechanism 90 to switch the state of the valve 94b between an open state and a closed state. Specifically, the control unit 102 controls the valve 94b to open the valve 94b, thereby allowing the rinse liquid flowing through the pipes 91 and 94a to pass up to the collected liquid storage tank 210. The control unit 102 also controls the valve 94b to close the valve 94b, thereby stopping the rinse liquid flowing through the pipes 91 and 94a from passing up to the collected liquid storage tank 210.

[0102] The substrate processing apparatus 100 of this embodiment is preferably used for forming semiconductor elements. For example, the substrate processing apparatus 100 is preferably used for processing a substrate W used as a semiconductor element having a stacked structure. The semiconductor element is a so-called 3D structure memory (storage device). As an example, the substrate W is preferably used as a NAND flash memory.

[0103] Next, the substrate processing apparatus 100 of this embodiment will be described with reference to Figures 1 to 4. Figure 4 is a flow chart of the substrate processing method of this embodiment.

[0104] 4, in step S102, the substrate W is loaded into the chamber 11. Under the control of the control unit 102, the center robot CR loads the substrate W into the chamber 11. Here, the front surface Wa of the substrate W faces vertically upward, and the back surface Wb of the substrate W faces vertically downward.

[0105] In step S104, the substrate holder 20 holds the loaded substrate W. Under the control of the controller 102, the substrate holder 20 holds the substrate W.

[0106] In step S106, rotation of the substrate W is started and the chemical liquid is supplied to the substrate W. Under the control of the control unit 102, the substrate holding unit 20 starts rotating the substrate W while holding the substrate W. Also, under the control of the control unit 102, the chemical liquid supply unit 30 supplies the chemical liquid from the nozzle 34 to the front surface Wa of the substrate W.

[0107] While the chemical liquid is being supplied from the nozzle 34 to the front surface Wa of the substrate W, the back surface processing liquid supply unit 50 may supply the chemical liquid from the nozzle 51 to the back surface Wb of the substrate W under the control of the control unit 102.

[0108] Under the control of the control unit 102, the cup 80 is positioned at an upper position covering the side of the substrate W. When the supply of the chemical liquid from the nozzle 34 to the front surface Wa of the substrate W starts, the cup 80 may be raised so as to be positioned at the side of the substrate W. Note that the cup 80 may be raised in accordance with the timing when the supply of the processing liquid to the substrate W starts.

[0109] Valve 94b is closed while valve 92b is open under the control of the control unit 102. In this case, cup 80 collects the chemical liquid scattered from the substrate W, and the chemical liquid collected in cup 80 flows through pipe 92a, the valve 92b of which is open, and is then discharged.

[0110] In step S108, a rinse liquid is supplied to the substrate W while the substrate W is rotating. Under the control of the control unit 102, the substrate holding unit 20 continues to rotate the substrate W while holding the substrate W. Also, under the control of the control unit 102, the rinse liquid supply unit 40 supplies the rinse liquid from the nozzle 44 to the front surface Wa of the substrate W.

[0111] While the rinsing liquid is being supplied from the nozzle 44 to the front surface Wa of the substrate W, the back surface processing liquid supply unit 50 may supply the rinsing liquid from the nozzle 51 to the back surface Wb of the substrate W under the control of the control unit 102.

[0112] Under the control of the control unit 102, the cup 80 remains in an upper position covering the side of the substrate W. Under the control of the control unit 102, the valve 92b remains open and the valve 94b remains closed. In this case, the cup 80 collects the rinse liquid splashed from the substrate W, and the rinse liquid collected in the cup 80 flows through the pipe 91 and the pipe 92a, whose valve 92b is open, before being discharged.

[0113] In step S110, the rinse liquid supplied to the substrate W is collected while the rinse liquid is being supplied to the substrate W while the substrate W is being rotated. Under the control of the control unit 102, the rinse liquid supply unit 40 continues to supply the rinse liquid from the nozzle 44 to the front surface Wa of the substrate W while the substrate holding unit 20 is rotating the substrate W.

[0114] While the rinsing liquid is being supplied from the nozzle 44 to the front surface Wa of the substrate W, the back surface processing liquid supply unit 50 may supply the rinsing liquid from the nozzle 51 to the back surface Wb of the substrate W under the control of the control unit 102.

[0115] Under the control of the control unit 102, the cup 80 remains in an upper position covering the side of the substrate W. Under the control of the control unit 102, the valve 92b is closed and the valve 94b is opened. In this case, the cup 80 collects the rinse liquid splashed from the substrate W, and the rinse liquid collected in the cup 80 flows through the pipe 91 and the pipe 94a whose valve 94b is open, and is collected in the collected liquid storage tank 210 as the collected liquid.

[0116] In step S112, the recovery liquid is supplied to the substrate W while the substrate W is rotating. Under the control of the control unit 102, the substrate holding unit 20 continues to rotate the substrate W while holding the substrate W. Under the control of the control unit 102, the rinse liquid supply unit 40 continues to supply the rinse liquid from the nozzle 44 to the front surface Wa of the substrate W. Under the control of the control unit 102, the back surface processing liquid supply unit 50 supplies the recovery liquid from the nozzle 51 to the back surface Wb of the substrate W.

[0117] Under the control of the control unit 102, the cup 80 remains in an upper position covering the side of the substrate W. The recovery liquid storage tank 210 recovers the rinse liquid and recovery liquid supplied to the substrate W. Under the control of the control unit 102, the valve 92b is closed and the valve 94b remains open. In this case, the cup 80 collects the rinse liquid and recovery liquid splashed from the substrate W, and the rinse liquid and recovery liquid collected in the cup 80 flow through the pipe 91 and the pipe 94a with the valve 94b open, and are recovered as recovery liquid in the recovery liquid storage tank 210.

[0118] In step S114, the substrate W is dried. At this time, the supply of the rinsing liquid and the recovery liquid is stopped, and the rotation speed of the substrate W is increased. Under the control of the control unit 102, the chemical liquid supply unit 30 stops the supply of the rinsing liquid from the nozzle 34 to the front surface Wa of the substrate W. Also, under the control of the control unit 102, the supply of the recovery liquid from the nozzle 51 to the back surface Wb of the substrate W is stopped. Furthermore, under the control of the control unit 102, the substrate holding unit 20 increases the rotation speed of the substrate W.

[0119] Also, under the control of the control unit 102, the cup 80 remains in an upper position covering the side of the substrate W. Under the control of the control unit 102, the valve 92b is closed and the valve 94b is opened. In this case, the cup 80 collects the rinsing liquid and the recovery liquid splashed from the substrate W, and the rinsing liquid and the recovery liquid collected in the cup 80 flow through the pipe 91 and the pipe 94a with the valve 94b open, and are recovered as the recovery liquid in the recovery liquid storage tank 210. Thereafter, under the control of the control unit 102, the substrate holder 20 stops the rotation of the substrate W.

[0120] In step S116, the substrate W is unloaded from the substrate processing unit 10. Under the control of the control unit 102, the substrate holder 20 releases the substrate W, and the center robot CR removes the substrate W from the chamber 11. Thereafter, the substrate W is unloaded to the outside of the substrate processing apparatus 100 via the indexer robot IR.

[0121] In this embodiment, the front surface Wa of the substrate W is treated with the chemical liquid as described above, and then treated with the rinse liquid. According to this embodiment, the rinse liquid supply unit 40 supplies the recovery liquid to the back surface Wb of the substrate W during at least a part of the period in which the rinse liquid is supplied to the front surface Wa of the substrate W. Therefore, the substrate processing apparatus 100 of this embodiment can reduce the amount of new processing liquid used.

[0122] Furthermore, in this embodiment, the rinse liquid used in processing the substrate W is recovered as the recovered liquid after a predetermined time has elapsed during the period in which the rinse liquid is supplied to the front surface Wa of the substrate W. This allows the rinse liquid with a relatively small amount of impurities to be recovered as the recovered liquid, thereby preventing problems from occurring when the recovered liquid is supplied to the back surface Wb of the substrate W.

[0123] Furthermore, in this embodiment, during the period in which the rinse liquid is supplied to the front surface Wa of the substrate W, after a predetermined time has elapsed, the recovery liquid is supplied to the back surface Wb of the substrate W. As a result, at the start of the rinse process, the rinse liquid containing relatively few impurities is also supplied to the back surface Wb of the substrate W, allowing the substrate W to be rinsed more appropriately.

[0124] In the above description, the supply of the recovery liquid to the back surface Wb of the substrate W in step S112 starts after the recovery of the recovery liquid in step S110, but this embodiment is not limited to this. The supply of the recovery liquid to the back surface Wb of the substrate W in step S112 may start simultaneously with the recovery of the recovery liquid in step S110. Alternatively, the supply of the recovery liquid to the back surface Wb of the substrate W in step S112 may start after the recovery of the recovery liquid in step S110.

[0125] In step S112 described above, the rinsing liquid supply unit 40 and the rinsing liquid supply unit 56 recover the rinsing liquid supplied to the front surface Wa and back surface Wb of the substrate W in this chamber 11 in step S110 and supply the recovered liquid to the back surface Wb of the substrate W. However, this embodiment is not limited to this. In step S112, the recovering liquid supply unit 58 may recover the rinsing liquid supplied to a substrate W previously processed in this chamber 11 and supply it as the recovered liquid to the back surface Wb of the current substrate W. Alternatively, in step S112, the recovering liquid supply unit 58 may recover the rinsing liquid used to process a substrate W in another chamber 11 and supply it as the recovered liquid to the back surface Wb of the substrate W. In step S110, the recovering liquid recovered in the recovering liquid storage tank 210 may be supplied to the back surface Wb of the next substrate W in this chamber 11, or may be supplied to the back surface Wb of a substrate W accommodated in another chamber 11.

[0126] Next, the substrate processing apparatus 100 of this embodiment will be described with reference to Figures 1 to 5. Figures 5(a) to 5(d) are schematic diagrams showing the flow of the substrate processing apparatus 100 of this embodiment.

[0127] As shown in FIG. 5(a), a chemical liquid is supplied to the front surface Wa and back surface Wb of the substrate W, and the front surface Wa and back surface Wb of the substrate W are treated with the chemical liquid. FIG. 5(a) is an example of step S106 in FIG. 4. The chemical liquid supply unit 30 supplies the chemical liquid to the front surface Wa of the rotating substrate W. The back surface processing liquid supply unit 50 supplies the chemical liquid to the back surface Wb of the rotating substrate W. Here, the cup 80 is located in an upper position. Therefore, the cup 80 faces the side of the substrate W. The cup 80 collects the chemical liquid that splashes as the substrate W rotates.

[0128] In the drainage mechanism 90, the valve 92b is open, while the valve 94b is closed, so that the chemical liquid collected in the cup 80 flows through the pipe 91 and the pipe 92a and is discharged.

[0129] As shown in Fig. 5(b), a rinse liquid is supplied to the front surface Wa and back surface Wb of the substrate W, and the front surface Wa and back surface Wb of the substrate W are treated with the rinse liquid. Fig. 5(b) is an example of step S108 in Fig. 4. The rinse liquid supply unit 40 supplies the rinse liquid to the front surface Wa of the rotating substrate W. The back surface processing liquid supply unit 50 supplies the rinse liquid to the back surface Wb of the rotating substrate W. The cup 80 collects the rinse liquid that splashes as the substrate W rotates.

[0130] In the drainage mechanism 90, the valve 92b is open and the valve 94b remains closed, so that the rinse liquid collected in the cup 80 flows through the pipe 91 and the pipe 92a and is discharged.

[0131] As shown in Fig. 5(c), a rinse liquid is supplied to the front surface Wa and back surface Wb of the substrate W, and the front surface Wa and back surface Wb of the substrate W are treated with the rinse liquid. Fig. 5(c) is an example of step S110 in Fig. 4. The rinse liquid supply unit 40 continues to supply the rinse liquid to the front surface Wa of the rotating substrate W, and the back surface processing liquid supply unit 50 continues to supply the rinse liquid to the back surface Wb of the rotating substrate W. Here, the cup 80 collects the rinse liquid that splashes as the substrate W rotates.

[0132] In the drainage mechanism 90, the valve 92b is closed and the valve 94b is opened, so that the rinse liquid collected in the cup 80 flows through the pipe 91 and the pipe 94a into the collected liquid reservoir tank 210 and is collected.

[0133] As shown in FIG. 5(d), a rinse liquid is supplied to the front surface Wa of the substrate W to process the front surface Wa of the substrate W with the rinse liquid, and a recovery liquid is supplied to the back surface Wb of the substrate W to process the back surface Wb of the substrate W with the recovery liquid. FIG. 5(d) is an example of step S112 in FIG. 4. For example, the rinse liquid supply unit 40 continues to supply the rinse liquid to the front surface Wa of the rotating substrate W. The back surface processing liquid supply unit 50 supplies the recovery liquid to the back surface Wb of the rotating substrate W. The cup 80 collects the rinse liquid that splashes as the substrate W rotates, and also collects the recovery liquid that splashes as the substrate W rotates.

[0134] In the drainage mechanism 90, the valve 94b is open and the valve 92b remains closed. Therefore, the rinse liquid and the recovered liquid collected in the cup 80 flow through the pipe 91 and the pipe 94a to the recovered liquid storage tank 210 and are recovered.

[0135] Thereafter, the rinse liquid supply unit 40 stops supplying the rinse liquid, and the back surface processing liquid supply unit 50 stops supplying the recovery liquid. At this time, the substrate holding unit 20 may increase the rotation speed of the substrate W to dry the substrate W. Thereafter, the substrate holding unit 20 stops rotating the substrate W, and the substrate W is unloaded from the chamber 11.

[0136] According to this embodiment, the front surface Wa of the substrate W is treated with the chemical liquid as described above, and then treated with the rinse liquid. According to this embodiment, the rinse liquid supply unit 40 supplies the recovery liquid to the back surface Wb of the substrate W during at least a part of the period in which the rinse liquid is supplied to the front surface Wa of the substrate W. Therefore, the substrate processing apparatus 100 of this embodiment can reduce the amount of new processing liquid used.

[0137] 4 and 5, during the period when the rinse liquid supply unit 40 supplies the rinse liquid to the front surface Wa of the substrate W, the back surface processing liquid supply unit 50 supplies the recovery liquid after supplying the rinse liquid to the back surface Wb of the substrate W. However, this embodiment is not limited to this. During the period when the rinse liquid supply unit 40 supplies the rinse liquid to the front surface Wa of the substrate W, the back surface processing liquid supply unit 50 may supply the recovery liquid without supplying the rinse liquid to the back surface Wb of the substrate W. In this case, the back surface processing liquid supply unit 50 may not have the rinse liquid supply unit 56.

[0138] 1 to 6, the back surface processing liquid supply unit 50 can selectively supply the recovery liquid and the rinse liquid to the back surface Wb of the substrate W, but this embodiment is not limited to this. The back surface processing liquid supply unit 50 may supply only the recovery liquid to the back surface Wb of the substrate W.

[0139] 4, the back surface processing liquid supply unit 50 includes the chemical liquid supply unit 54, the rinse liquid supply unit 56, and the recovery liquid supply unit 58. In the substrate processing method described above with reference to FIG. 5, the chemical liquid, the rinse liquid, and the recovery liquid are selectively supplied to the back surface Wb of the substrate W, but this embodiment is not limited to this. The back surface processing liquid supply unit 50 may include the recovery liquid supply unit 58 but may not include the chemical liquid supply unit 54 and the rinse liquid supply unit 56. In this case, the recovery liquid may be supplied to the back surface Wb of the substrate W without supplying the chemical liquid and the rinse liquid.

[0140] Next, the substrate processing apparatus 100 of this embodiment will be described with reference to Figures 1 to 6. Figures 6(a) to 6(c) are schematic diagrams showing the flow of the substrate processing apparatus 100 of this embodiment.

[0141] 6(a), a chemical liquid is supplied to the front surface Wa of the substrate W to process the front surface Wa with the chemical liquid, and a recovery liquid is supplied to the back surface Wb of the substrate W to process the back surface Wb with the recovery liquid. The rinse liquid supply unit 40 supplies the rinse liquid to the front surface Wa of the rotating substrate W. The back surface processing liquid supply unit 50 supplies the recovery liquid to the back surface Wb of the substrate W.

[0142] Here, the cup 80 is located at an upper position and faces the side of the substrate W. The cup 80 collects the chemical liquid and the recovery liquid that are scattered as the substrate W rotates.

[0143] In the drainage mechanism 90, the valve 92b is open and the valve 94b is closed, so that the chemical solution and the recovered liquid collected in the cup 80 flow through the pipe 91 and the pipe 92a and are discharged.

[0144] 6(b), a rinse liquid is supplied to the front surface Wa of the substrate W to process the front surface Wa of the substrate W with the rinse liquid, and a recovery liquid is supplied to the back surface Wb of the substrate W to process the back surface Wb of the substrate W with the recovery liquid. For example, the rinse liquid supply unit 40 supplies the rinse liquid to the front surface Wa of the rotating substrate W. The back surface processing liquid supply unit 50 continues to supply the recovery liquid to the back surface Wb of the rotating substrate W. Here, the cup 80 re-collects the rinse liquid and recovery liquid that splash as the substrate W rotates.

[0145] In the drainage mechanism 90, the valve 92b is open and the valve 94b remains closed, so that the rinse liquid and recovery liquid collected in the cup 80 flow through the pipe 91 and the pipe 92a and are discharged.

[0146] 6(c), a rinse liquid is supplied to the front surface Wa of the substrate W to process the front surface Wa of the substrate W with the rinse liquid, and a recovery liquid is supplied to the back surface Wb of the substrate W to process the back surface Wb of the substrate W with the recovery liquid. The rinse liquid supply unit 40 continues to supply the rinse liquid to the front surface Wa of the rotating substrate W, and the back surface processing liquid supply unit 50 continues to supply the recovery liquid to the back surface Wb of the rotating substrate W. Here, the cup 80 again collects the rinse liquid and recovery liquid that splash as the substrate W rotates.

[0147] In the drainage mechanism 90, the valve 92b is closed and the valve 94b is opened, so that the rinse liquid and the recovered liquid collected in the cup 80 flow through the pipe 91 and the pipe 94a into the recovered liquid storage tank 210 and are recovered.

[0148] Thereafter, the rinse liquid supply unit 40 stops supplying the rinse liquid, and the back surface processing liquid supply unit 50 stops supplying the recovery liquid. At this time, the substrate holding unit 20 may increase the rotation speed of the substrate W to dry the substrate W. Thereafter, the substrate holding unit 20 stops rotating the substrate W, and the substrate W is unloaded from the chamber 11.

[0149] In this embodiment, the front surface Wa of the substrate W is treated with the chemical liquid as described above, and then treated with the rinse liquid. According to this embodiment, during the period in which the chemical liquid and the rinse liquid are supplied to the front surface Wa of the substrate W, a recovery liquid is supplied to the back surface Wb of the substrate W. Therefore, the substrate processing apparatus 100 of this embodiment can reduce the amount of new processing liquid used.

[0150] 1 to 5, the back surface processing liquid supply unit 50 includes the rinsing liquid supply unit 56 in addition to the chemical liquid supply unit 54, but this embodiment is not limited to this. The back surface processing liquid supply unit 50 may include the chemical liquid supply unit 54 without including the rinsing liquid supply unit 56.

[0151] Next, a substrate processing apparatus 100 according to this embodiment will be described with reference to Figures 1 to 7. Figure 7 is a schematic diagram of the substrate processing apparatus 100 according to this embodiment. The substrate processing unit 10 in Figure 7 has the same configuration as the substrate processing apparatus 100 shown in Figure 2, except that it supplies a diluted chemical solution obtained by diluting a chemical solution with a diluting solution to the front surface Wa of the substrate W, and supplies a diluted chemical solution obtained by diluting a chemical solution with a recovery solution to the back surface Wb of the substrate W. Therefore, in order to avoid redundancy, a duplicated description will be omitted.

[0152] As shown in FIG. 7, in the substrate processing unit 10, the chemical liquid supplying section 30 supplies onto the front surface Wa of the substrate W a diluted chemical liquid obtained by diluting a chemical liquid with a diluting liquid.

[0153] The chemical liquid supply unit 30 includes a pipe 32, a nozzle 34, a pipe 32p, a valve 36p, a pipe 32q, and a valve 36q. The nozzle 34 is connected to one end of the pipe 32.

[0154] The pipe 32p is connected to the other end of the pipe 32. A chemical solution is supplied to the pipe 32p from a supply source. The valve 36p opens and closes the flow path in the pipe 32p. When the valve 36p is opened, the chemical solution flows through the pipe 32p.

[0155] The chemical solution may include, for example, hydrofluoric acid. The chemical solution may also include phosphoric acid. The chemical solution may also include hydrogen peroxide. The chemical solution may also include SC1 (ammonia-hydrogen peroxide mixture), SC2 (hydrochloric acid-hydrogen peroxide mixture), or aqua regia (a mixture of concentrated hydrochloric acid and concentrated nitric acid).

[0156] Pipe 32q is connected to the other end of pipe 32. Diluent is supplied to pipe 32q from a supply source. Valve 36q opens and closes the flow path in pipe 32q. When valve 36q is opened, diluent flows through pipe 32q.

[0157] The diluted solution may include, for example, deionized water (DIW), carbonated water, electrolytic ionized water, ozone water, ammonia water, hydrochloric acid water with a diluted concentration (for example, about 10 ppm to 100 ppm), or reduced water (hydrogen water). The diluted solution may be the same type as the rinse solution.

[0158] When the valves 36p and 36q are opened, the chemical liquid and the diluent flow through the pipes 32p and 32q, respectively, and thus a diluted chemical liquid, which is the chemical liquid diluted with the diluent, flows in the pipe 32. The nozzle 34 discharges the diluted chemical liquid onto the front surface Wa of the substrate W.

[0159] The back surface processing liquid supply unit 50 supplies the recovery liquid alone or a mixture of the chemical liquid and the recovery liquid to the back surface Wb of the substrate W. The back surface processing liquid supply unit 50 includes a chemical liquid supply unit 54 and a recovery liquid supply unit 58. On the other hand, the substrate processing apparatus 100 shown in FIG. 7 differs from the substrate processing apparatus 100 shown in FIG. 2 in that the back surface processing liquid supply unit 50 does not include the rinse liquid supply unit 56.

[0160] For example, the back surface processing liquid supply unit 50 may supply the recovery liquid to the back surface Wb of the substrate W. Alternatively, the back surface processing liquid supply unit 50 may mix the chemical liquid and the recovery liquid and supply the resulting mixture to the back surface Wb of the substrate W.

[0161] Next, the substrate processing apparatus 100 of this embodiment will be described with reference to Figures 1 to 8. Figures 8(a) to 8(c) are schematic diagrams showing the flow of the substrate processing apparatus 100 of this embodiment. Figures 8(a) to 8(c) are similar to the flow of the substrate processing apparatus 100 shown in Figures 5(a) to 5(d) except that the substrate W is processed with a diluted chemical solution, and therefore, to avoid redundancy, duplicated explanations will be omitted.

[0162] 8(a), a diluted chemical solution is supplied to the front surface Wa and back surface Wb of the substrate W, and the front surface Wa and back surface Wb of the substrate W are treated with the diluted chemical solution. The chemical solution supply unit 30 supplies the diluted chemical solution to the front surface Wa of the rotating substrate W. Here, the valves 36p and 36q are open, and the nozzle 34 discharges the diluted chemical solution onto the front surface Wa of the substrate W.

[0163] The back surface processing liquid supply unit 50 supplies the diluted chemical liquid to the back surface Wb of the rotating substrate W. The valves 54b and 58b are open. Therefore, the chemical liquid flowing through the pipe 54a and the recovery liquid flowing through the pipe 58a are mixed in the pipe 52c to generate the diluted chemical liquid. Thereafter, the nozzle 51 discharges the diluted chemical liquid onto the back surface Wb of the substrate W.

[0164] Here, the cup 80 is located at an upper position and faces the side of the substrate W. In this case, the cup 80 collects the diluted chemical solution that splashes from the substrate W as the substrate W rotates.

[0165] In the drainage mechanism 90, the valve 92b is open, while the valve 94b is closed, so that the diluted chemical liquid collected in the cup 80 flows through the pipe 91 and the pipe 92a and is discharged.

[0166] As shown in FIG. 8(b), a rinse liquid is supplied to the front surface Wa of the substrate W to process the front surface Wa of the substrate W with the rinse liquid, and a recovery liquid is supplied to the back surface Wb of the substrate W to process the back surface Wb of the substrate W with the recovery liquid. The rinse liquid supply unit 40 supplies the rinse liquid to the front surface Wa of the rotating substrate W. The back surface processing liquid supply unit 50 supplies the recovery liquid to the back surface Wb of the rotating substrate W. The back surface processing liquid supply unit 50 closes the valve 54b to stop the supply of the chemical liquid. The cup 80 collects the rinse liquid and recovery liquid that splash as the substrate W rotates.

[0167] In the drainage mechanism 90, the valve 92b is open and the valve 94b remains closed, so that the rinse liquid and recovery liquid collected in the cup 80 flow through the pipe 91 and the pipe 92a and are discharged.

[0168] 8(c), a rinse liquid is supplied to the front surface Wa of the substrate W to process the front surface Wa of the substrate W with the rinse liquid, and a recovery liquid is supplied to the back surface Wb of the substrate W to process the back surface Wb of the substrate W with the recovery liquid. The rinse liquid supply unit 40 continues to supply the rinse liquid to the front surface Wa of the rotating substrate W. The back surface processing liquid supply unit 50 continues to supply the recovery liquid to the back surface Wb of the rotating substrate W. Here, the cup 80 collects the rinse liquid and recovery liquid that splash as the substrate W rotates.

[0169] In the drainage mechanism 90, the valve 94b is opened, while the valve 92b is closed. Therefore, the rinse liquid and the recovery liquid collected in the cup 80 flow through the pipe 91 and the pipe 94a and are stored in the recovery liquid storage tank 210. The recovery liquid supply unit 58 supplies the recovery liquid stored in the recovery liquid storage tank 210 to the back surface Wb of the substrate W.

[0170] Thereafter, the rinse liquid supply unit 40 stops supplying the rinse liquid, and the back surface processing liquid supply unit 50 stops supplying the recovery liquid. At this time, the substrate holding unit 20 may increase the rotation speed of the substrate W to dry the substrate W. Thereafter, the substrate holding unit 20 stops rotating the substrate W, and the substrate W is unloaded from the chamber 11.

[0171] According to this embodiment, the front surface Wa of the substrate W is treated with the diluted chemical liquid as described above, and then treated with the rinse liquid. According to this embodiment, during the period in which the diluted chemical liquid and the rinse liquid are supplied to the front surface Wa of the substrate W, the recovery liquid is supplied as at least a part of the processing liquid to the back surface Wb of the substrate W. Therefore, the substrate processing apparatus 100 of this embodiment can reduce the amount of new processing liquid used.

[0172] Next, a substrate processing apparatus 100 according to this embodiment will be described with reference to Figures 1 to 9. Figure 9 is a schematic diagram of the substrate processing apparatus 100 according to this embodiment. The substrate processing apparatus 100 in Figure 9 has the same configuration as the substrate processing apparatus 100 shown in Figure 2, except that it supplies a first chemical liquid and a second chemical liquid to the substrate W, and therefore, redundant description will be omitted to avoid redundancy.

[0173] 9, the chemical liquid supply unit 30 has a first chemical liquid supply unit 30a and a second chemical liquid supply unit 30b. The first chemical liquid supply unit 30a supplies a first chemical liquid to the front surface Wa of the substrate W. The second chemical liquid supply unit 30b supplies a second chemical liquid different from the first chemical liquid to the front surface Wa of the substrate W. For example, the first chemical liquid supply unit 30a supplies hydrofluoric acid to the front surface Wa of the substrate W, and the second chemical liquid supply unit 30b supplies an ammonia-hydrogen peroxide solution mixture (SC1) to the front surface Wa of the substrate W.

[0174] The first chemical liquid supply unit 30a includes a pipe 32a, a nozzle 34a, and a valve 36a. The nozzle 34a is connected to the pipe 32a. The first chemical liquid is supplied to the pipe 32a from a supply source. The valve 36a opens and closes a flow path in the pipe 32a. The nozzle 34a discharges the first chemical liquid onto the front surface Wa of the substrate W.

[0175] Valve 36a adjusts the opening of pipe 32a to regulate the flow rate of the first chemical liquid supplied to pipe 32a. Specifically, valve 36a includes a valve body (not shown) having a valve seat provided therein, a valve element that opens and closes the valve seat, and an actuator (not shown) that moves the valve element between an open position and a closed position.

[0176] The nozzle 34a may be movable. The first chemical liquid supply unit 30a may further include a nozzle moving unit 38a. The nozzle moving unit 38a may raise and lower the nozzle 34a, or may rotate the nozzle 34a horizontally around a rotation axis. The nozzle moving unit 38a raises and lowers the nozzle 34a. For example, the nozzle moving unit 38a includes a ball screw mechanism and an electric motor that provides driving force to the ball screw mechanism. The nozzle moving unit 38a also rotates the nozzle 34a horizontally. For example, the nozzle moving unit 38a includes an electric motor.

[0177] The second chemical liquid supply unit 30b includes a pipe 32b, a nozzle 34b, and a valve 36b. The nozzle 34b is connected to the pipe 32b. The second chemical liquid is supplied to the pipe 32b from a supply source. The valve 36b opens and closes a flow path in the pipe 32b. The nozzle 34b discharges the second chemical liquid onto the front surface Wa of the substrate W. The pipe 32b, the nozzle 34b, the valve 36b, and the nozzle movement unit 38b in the second chemical liquid supply unit 30b have the same configuration as the pipe 32a, the nozzle 34a, the valve 36a, and the nozzle movement unit 38a in the first chemical liquid supply unit 30a, and therefore a redundant description will be omitted.

[0178] The back surface processing liquid supply unit 50 has a first chemical liquid supply unit 53 and a second chemical liquid supply unit 55. The first chemical liquid supply unit 53 supplies a first chemical liquid to the back surface Wb of the substrate W. The second chemical liquid supply unit 55 supplies a second chemical liquid different from the first chemical liquid to the back surface Wb of the substrate W. For example, the first chemical liquid supply unit 53 supplies hydrofluoric acid to the back surface Wb of the substrate W, and the second chemical liquid supply unit 55 supplies SC1 (ammonia-hydrogen peroxide solution mixture) to the back surface Wb of the substrate W.

[0179] The first chemical liquid supply unit 53 includes a pipe 53a and a valve 53b. The first chemical liquid is supplied from a supply source to the pipe 53a. The valve 53b opens and closes the flow path in the pipe 53a.

[0180] Valve 53b adjusts the opening of pipe 53a to adjust the flow rate of the first chemical liquid supplied to pipe 53a. Specifically, valve 53b includes a valve body (not shown) having a valve seat provided therein, a valve element that opens and closes the valve seat, and an actuator (not shown) that moves the valve element between an open position and a closed position.

[0181] Second chemical liquid supply unit 55 includes pipe 55a and valve 55b. Pipe 55a is supplied with the second chemical liquid from a supply source. Valve 55b opens and closes the flow path in pipe 55a. Pipe 55a and valve 55b in second chemical liquid supply unit 55 have the same configuration as pipe 53a and valve 53b in first chemical liquid supply unit 53, and therefore, redundant description will be omitted.

[0182] Drainage mechanism 90 further includes pipe 93a and valve 93b in addition to pipe 92a, valve 92b, pipe 94a, and valve 94b. Pipe 92a is connected to pipe 91. The first chemical liquid and rinse liquid collected in cup 80 flow from pipe 91 to pipe 92a.

[0183] Pipe 93a is connected to pipe 91. The second chemical liquid and rinse liquid collected in cup 80 flow from pipe 91 into pipe 93a. Valve 93b opens and closes a flow path in pipe 93a. Valve 93b adjusts the opening of pipe 93a to regulate the flow rate of the chemical liquid flowing through pipe 93a. Specifically, valve 93b includes a valve body (not shown) with a valve seat provided therein, a valve element that opens and closes the valve seat, and an actuator (not shown) that moves the valve element between an open position and a closed position.

[0184] The recovery liquid may flow through at least one of the pipe 92a and the pipe 93a.

[0185] Next, the substrate processing apparatus 100 of this embodiment will be described with reference to Figures 1 to 11. Figures 10(a) to 11(c) are schematic diagrams showing the flow of the substrate processing apparatus 100 of this embodiment. Figures 10(a) to 11(c) are similar to the flow of the substrate processing apparatus 100 shown in Figure 5, except that two types of chemical liquids and a rinse are alternately supplied to the substrate W, and therefore, to avoid redundancy, duplicated explanations will be omitted.

[0186] 10(a), a first chemical liquid is supplied to the front surface Wa and back surface Wb of the substrate W, and the front surface Wa and back surface Wb of the substrate W are treated with the first chemical liquid. The first chemical liquid supply unit 30a supplies the first chemical liquid to the front surface Wa of the rotating substrate W. The back surface processing liquid supply unit 50 supplies the first chemical liquid to the back surface Wb of the rotating substrate W. In this case, the cup 80 collects the first chemical liquid that splashes as the substrate W rotates.

[0187] In drainage mechanism 90, valve 92b is open, while valves 93b and 94b are closed, so that the first chemical liquid collected in cup 80 flows through pipe 91 and pipe 92a and is discharged.

[0188] 10(b), a rinse liquid is supplied to the front surface Wa and back surface Wb of the substrate W, and the front surface Wa and back surface Wb of the substrate W are treated with the rinse liquid. The rinse liquid supply unit 40 supplies the rinse liquid to the front surface Wa of the rotating substrate W. The back surface processing liquid supply unit 50 supplies the rinse liquid to the back surface Wb of the rotating substrate W. The cup 80 collects the rinse liquid that splashes as the substrate W rotates.

[0189] In the drainage mechanism 90, the valve 92b is open, and the valves 93b and 94b remain closed, so that the rinse liquid collected in the cup 80 flows through the pipe 91 and the pipe 92a and is discharged.

[0190] 10(c), the second chemical liquid is supplied to the front surface Wa and back surface Wb of the substrate W, and the front surface Wa and back surface Wb of the substrate W are treated with the second chemical liquid. The second chemical liquid supply unit 30b supplies the second chemical liquid to the front surface Wa of the rotating substrate W. The back surface treatment liquid supply unit 50 supplies the second chemical liquid to the back surface Wb of the rotating substrate W. The cup 80 collects the second chemical liquid that splashes as the substrate W rotates.

[0191] In drainage mechanism 90, valve 93b is open, while valves 92b and 94b are closed, so that the second chemical liquid collected in cup 80 flows through pipe 91 and pipe 93a and is discharged.

[0192] 11(a), a rinse liquid is supplied to the front surface Wa and back surface Wb of the substrate W, and the front surface Wa and back surface Wb of the substrate W are treated with the rinse liquid. A rinse liquid supply unit 40 supplies the rinse liquid to the front surface Wa of the rotating substrate W. A back surface processing liquid supply unit 50 supplies the rinse liquid to the back surface Wb of the rotating substrate W. A cup 80 collects the rinse liquid that splashes as the substrate W rotates.

[0193] In the drainage mechanism 90, the valve 93b is open, and the valves 92b and 94b remain closed, so that the rinse liquid collected in the cup 80 flows through the pipe 91 and the pipe 93a and is discharged.

[0194] 11(b), a rinse liquid is supplied to the front surface Wa and back surface Wb of the substrate W, and the front surface Wa and back surface Wb of the substrate W are treated with the rinse liquid. The rinse liquid supply unit 40 continues to supply the rinse liquid to the front surface Wa of the rotating substrate W. The back surface processing liquid supply unit 50 continues to supply the rinse liquid to the back surface Wb of the substrate W. In this case, the cup 80 collects the rinse liquid that splashes as the substrate W rotates.

[0195] In the drainage mechanism 90, the valve 94b is opened and the valves 92b and 93b are closed. Therefore, the rinse liquid collected in the cup 80 flows into the collected liquid reservoir tank 210 through the pipe 91 and the pipe 94a.

[0196] 11(c), a rinse liquid is supplied to the front surface Wa of the substrate W to process the front surface Wa of the substrate W with the rinse liquid, and a recovery liquid is supplied to the back surface Wb of the substrate W to process the back surface Wb of the substrate W with the recovery liquid. The rinse liquid supply unit 40 supplies the rinse liquid to the front surface Wa of the rotating substrate W. The back surface processing liquid supply unit 50 supplies the recovery liquid to the back surface Wb of the substrate W. In this case, the cup 80 collects the rinse liquid and recovery liquid that splash as the substrate W rotates.

[0197] In the drainage mechanism 90, the valve 94b is open, and the valves 92b and 93b remain closed. Therefore, the rinse liquid and the recovered liquid collected in the cup 80 flow through the pipe 91 and the pipe 94a into the recovered liquid storage tank 210.

[0198] Thereafter, the rinse liquid supply unit 40 stops supplying the rinse liquid, and the back surface processing liquid supply unit 50 stops supplying the recovery liquid. At this time, the substrate holding unit 20 may increase the rotation speed of the substrate W to dry the substrate W. Thereafter, the substrate holding unit 20 stops rotating the substrate W, and the substrate W is unloaded from the chamber 11.

[0199] According to this embodiment, the front surface Wa of the substrate W is processed alternately with the first chemical liquid, the second chemical liquid, and the rinse liquid as described above. According to this embodiment, during the period in which the rinse liquid is supplied to the front surface Wa of the substrate W, the recovery liquid is supplied to the back surface Wb of the substrate W. Therefore, the substrate processing apparatus 100 of this embodiment can reduce the amount of new processing liquid used.

[0200] 10 and 11, the rinse liquid is recovered as the recovered liquid after a predetermined time has elapsed during the period in which the rinse liquid is supplied after the second chemical liquid is supplied to the front surface Wa of the substrate W. However, this embodiment is not limited to this. The rinse liquid may also be recovered as the recovered liquid after a predetermined time has elapsed during the period in which the rinse liquid is supplied after the first chemical liquid is supplied to the front surface Wa of the substrate W.

[0201] 10 and 11, the recovery liquid is supplied to the back surface Wb of the substrate W after a predetermined time has elapsed during the period in which the rinse liquid is supplied after the second chemical liquid is supplied to the front surface Wa of the substrate W. However, this embodiment is not limited to this. The recovery liquid may be supplied to the back surface Wb of the substrate W after a predetermined time has elapsed during the period in which the rinse liquid is supplied after the first chemical liquid is supplied to the front surface Wa of the substrate W.

[0202] 2 and 5 to 11, all liquids scattered from the rotating substrate W are collected in the same cup 80, but this embodiment is not limited to this. There may be multiple types of cups 80.

[0203] 1 to 11, the substrate holder 20 increases the rotation speed of the substrate W to dry the substrate W, but this embodiment is not limited to this. The substrate W may also be dried by supplying a gas. Furthermore, after the substrate W is rinsed, the substrate W may be dried by supplying a highly volatile processing liquid to the substrate W.

[0204] Next, a substrate processing apparatus 100 according to this embodiment will be described with reference to Figures 1 to 12. Figure 12 is a schematic diagram of the substrate processing apparatus 100 according to this embodiment. The substrate processing apparatus 100 in Figure 12 has the same configuration as the substrate processing apparatus 100 shown in Figure 9, except that the cup 80 includes a first cup 81 and a second cup 82, and the substrate processing apparatus 100 further includes a shielding member 60, a processing liquid supply unit 72, and an inert gas supply unit 74. Therefore, to avoid redundancy, a duplicated description will be omitted.

[0205] 12, the substrate processing apparatus 100 further includes a shielding member 60, a processing liquid supply unit 72, and an inert gas supply unit 74. The shielding member 60 is located above the surface Wa of the substrate W. The shielding member 60 is movable in a direction vertical to the surface Wa of the substrate W. When the shielding member 60 moves closer to the surface Wa of the substrate W, it shields the surface Wa of the substrate W. The shielding member 60 supplies the processing liquid and the inert gas to the surface Wa of the substrate W.

[0206] The shielding member 60 is configured to be movable relative to the substrate W. The shielding member 60 further includes a shielding plate 62 and a moving part 64. The shielding plate 62 is plate-shaped and extends in the horizontal direction (XY plane). The shielding plate 62 is positioned above the front surface Wa of the substrate W held by the chuck member 22. The lower surface 62a of the shielding plate 62 faces the front surface Wa of the substrate W held by the chuck member 22. The lower surface 62a is, for example, circular. The diameter of the lower surface 62a may be equal to or greater than the diameter of the substrate W.

[0207] The moving unit 64 moves the shielding plate 62 up and down in the vertical direction. For example, the moving unit 64 includes a ball screw mechanism and an electric motor that provides a driving force to the ball screw mechanism.

[0208] The moving unit 64 raises and lowers the shielding plate 62 between a retracted position and a shielding position. The shielding position is lower than the retracted position. Specifically, the shielding position is closer to the substrate W held by the chuck member 22 than the retracted position. In FIG. 12, the shielding plate 62 is located at the retracted position.

[0209] When the shielding plate 62 moves from the retracted position to the shielding position, a processing space is formed by the shielding plate 62 in the shielding position and the cup 80 in the upper position. The processing space is a space that is substantially shielded from the external atmosphere. In other words, the processing space is a local space formed inside the chamber 11. The processing space is substantially shielded from the atmosphere inside the chamber 11.

[0210] The processing liquid supply unit 72 supplies a processing liquid to the surface Wa of the substrate W. Here, the processing liquid is suitably used to dry the rinse liquid. The processing liquid is preferably a low-surface-tension liquid having a surface tension lower than that of the rinse liquid. In this case, the substrate W is not dried immediately after the rinse liquid is shaken off from the substrate W, but rather the rinse liquid on the substrate W is replaced with the processing liquid, and then the substrate W is dried by shaking off the processing liquid from the substrate W. Therefore, if the processing liquid is a low-surface-tension liquid, the surface tension acting on the substrate W when drying the substrate W can be reduced.

[0211] Examples of organic solvents that function as treatment liquids include liquids containing at least one of IPA (isopropyl alcohol), HFE (hydrofluoroether), methanol, ethanol, acetone, PGEE (propylene glycol monoethyl ether), and trans-1,2-dichloroethylene. The treatment liquid does not have to be a single component, but may be a liquid mixed with other components. For example, it may be a mixture of IPA and DIW, or a mixture of IPA and HFE.

[0212] The processing liquid supply unit 72 includes a pipe 72a, a nozzle 72b, and a valve 72c. The nozzle 72b is attached to the shielding plate 62. The processing liquid is supplied to the pipe 72a from a supply source. The valve 72c opens and closes a flow path in the pipe 72a. The nozzle 72b ejects the processing liquid onto the front surface Wa of the substrate W.

[0213] The valve 72c adjusts the opening of the pipe 72a to adjust the flow rate of the processing liquid supplied to the pipe 72a. Specifically, the valve 72c includes a valve body (not shown) with a valve seat provided therein, a valve element that opens and closes the valve seat, and an actuator (not shown) that moves the valve element between an open position and a closed position.

[0214] The inert gas supply unit 74 supplies an inert gas to the surface Wa of the substrate W. When supplied to the surface Wa of the substrate W, the inert gas does not substantially change the characteristics of the surface Wa of the substrate W. Typically, the inert gas is nitrogen gas. However, the inert gas may also be a rare gas.

[0215] The inert gas supply unit 74 supplies an inert gas to the surface Wa of the substrate W. The inert gas supply unit 74 includes a pipe 74a, a nozzle 74b, and a valve 74c. The nozzle 74b is attached to the shielding plate 62. An inert gas is supplied to the pipe 74a from a supply source. The valve 74c opens and closes a flow path in the pipe 74a. The nozzle 74b ejects the inert gas onto the surface Wa of the substrate W.

[0216] Valve 74c adjusts the opening of pipe 74a to adjust the flow rate of inert gas supplied to pipe 74a. Specifically, valve 74c includes a valve body (not shown) with a valve seat provided therein, a valve element that opens and closes the valve seat, and an actuator (not shown) that moves the valve element between an open position and a closed position.

[0217] Nozzle 72b and nozzle 74b are installed on the shielding plate 62. The outlets of nozzle 72b and nozzle 74b open to the lower surface 62a of the shielding plate 62. The outlets of nozzle 72b and nozzle 74b may be positioned opposite to the center of the substrate W held by the chuck member 22. Nozzle 72b ejects a processing liquid toward the front surface Wa of the substrate W. Nozzle 74b ejects an inert gas toward the front surface Wa of the substrate W.

[0218] The cup 80 has a first cup 81 and a second cup 82. The second cup 82 is located radially outward of the substrate W relative to the first cup 81. The first cup 81 and the second cup 82 each move up and down in the vertical direction. The first cup 81 and the second cup 82 move up to an upper position located to the side of the substrate W. The first cup 81 and the second cup 82 also move down to a lower position located diagonally below the substrate W. The first cup 81 and the second cup 82 collect liquid splashed from the substrate W.

[0219] The second cup 82 is positioned above and overlaps the first cup 81. Therefore, when the first cup 81 is lowered, the second cup 82 can be lowered to the position where the first cup 81 is lowered.

[0220] The drainage mechanism 90 discharges the chemical liquid, rinse liquid, and processing liquid collected in the cups 80 to the outside of the chamber 11. The drainage mechanism 90 has a pipe 91a for discharging the processing liquid collected in the first cup 81 and a pipe 91b for discharging the processing liquid collected in the second cup 82. One end of the pipe 91a is connected to the bottom of the first cup 81. One end of the pipe 91b is connected to the bottom of the second cup 82.

[0221] The drainage mechanism 90 includes a pipe 92a, a valve 92b, a pipe 93a, a valve 93b, a pipe 94a, and a valve 94b, as well as a pipe 95a and a valve 95b. The pipes 92a, 93a, and 94a are connected to the pipe 91a. The pipe 95a is connected to the pipe 91b. The valve 95b has a configuration similar to that of the valves 92b, 93b, and 94b.

[0222] For example, the first cup 81 is positioned vertically above and to the side of the substrate W during the period when the first chemical liquid supply unit 30a supplies the first chemical liquid to the substrate W. At this time, the second cup 82 is also positioned above, similar to the first cup 81.

[0223] Furthermore, the first cup 81 is positioned to the side of the substrate W during the period when the rinsing liquid supply unit 40 supplies the rinsing liquid to the substrate W. Thereafter, the first cup 81 is positioned to the side of the substrate W during the period when the second chemical liquid supply unit 30b and the rinsing liquid supply unit 40 supply the second chemical liquid and the rinsing liquid to the substrate W, respectively.

[0224] In this case, the first cup 81 collects the first chemical liquid, the rinse liquid, the second chemical liquid, and the rinse liquid that are scattered as the substrate W rotates. After that, when the period during which the rinse liquid supply unit 40 supplies the rinse liquid to the substrate W ends, the first cup 81 descends vertically downward from the side of the substrate W. In this case, the second cup 82 is positioned on the side of the substrate W.

[0225] Thereafter, the second cup 82 is positioned to the side of the substrate W for the period during which the shielding member 60 supplies the processing liquid to the substrate W. Thereafter, the second cup 82 is positioned to the side of the substrate W for the period during which the shielding member 60 supplies the inert gas to the substrate W. When the period during which the shielding member 60 supplies the inert gas to the substrate W ends, the second cup 82 descends vertically downward from the side of the substrate W.

[0226] The substrate processing apparatus 100 of this embodiment alternately processes the front surface Wa of the substrate W with the first chemical liquid, the second chemical liquid, and the rinse liquid. According to this embodiment, a recovery liquid is supplied to the back surface Wb of the substrate W during at least a part of the period in which the rinse liquid is supplied to the front surface Wa of the substrate W. Therefore, the substrate processing apparatus 100 of this embodiment can reduce the amount of new processing liquid used.

[0227] Next, the substrate processing apparatus 100 of this embodiment will be described with reference to Figures 1 to 16. Figures 13(a) to 16(b) are schematic diagrams showing the flow of the substrate processing apparatus 100 of this embodiment. Figures 13(a) to 16(b) are similar to Figures 10(a) to 11(c) except that the cup 80 has a first cup 81 and a second cup 82, and a processing liquid and an inert gas are supplied to the surface Wa of the substrate W from a shielding member 60, and therefore, duplicated explanations will be omitted to avoid redundancy.

[0228] 13(a), a first chemical liquid is supplied to the front surface Wa and back surface Wb of the substrate W, and the front surface Wa and back surface Wb of the substrate W are processed with the first chemical liquid. The first chemical liquid supply unit 30a supplies the first chemical liquid to the front surface Wa of the rotating substrate W. The back surface processing liquid supply unit 50 supplies the first chemical liquid to the back surface Wb of the rotating substrate W.

[0229] Here, the first cup 81 and the second cup 82 are both located at the upper position. Therefore, the first cup 81 faces the side of the substrate W, and the first cup 81 collects the first chemical liquid that splashes as the substrate W rotates.

[0230] In drainage mechanism 90, valve 92b is open, while valves 93b, 94b, and 95b are closed. Therefore, the first chemical liquid collected in first cup 81 flows through pipes 91a and 92a and is discharged.

[0231] 13(b), a rinse liquid is supplied to the front surface Wa and back surface Wb of the substrate W, and the front surface Wa and back surface Wb of the substrate W are treated with the rinse liquid. The rinse liquid supply unit 40 supplies the rinse liquid to the front surface Wa of the rotating substrate W. The back surface processing liquid supply unit 50 supplies the rinse liquid to the back surface Wb of the rotating substrate W. The first cup 81 collects the rinse liquid that splashes as the substrate W rotates.

[0232] In the drainage mechanism 90, the valve 92b is open, and the valves 93b, 94b, and 95b remain closed, so that the rinse liquid collected in the first cup 81 flows through the pipes 91a and 92a and is discharged.

[0233] 14(a), the second chemical liquid is supplied to the front surface Wa and back surface Wb of the substrate W, and the front surface Wa and back surface Wb of the substrate W are treated with the second chemical liquid. The second chemical liquid supply unit 30b supplies the second chemical liquid to the front surface Wa of the rotating substrate W. The back surface treatment liquid supply unit 50 supplies the second chemical liquid to the back surface Wb of the rotating substrate W. Here, the first cup 81 collects the second chemical liquid that splashes as the substrate W rotates.

[0234] In drainage mechanism 90, valve 93b is opened, while valves 92b, 94b, and 95b are closed, so that the second chemical liquid collected in first cup 81 flows through pipe 91a and pipe 93a and is discharged.

[0235] 14(b), a rinse liquid is supplied to the front surface Wa and back surface Wb of the substrate W, and the front surface Wa and back surface Wb of the substrate W are treated with the rinse liquid. The rinse liquid supply unit 40 supplies the rinse liquid to the front surface Wa of the rotating substrate W. The back surface processing liquid supply unit 50 supplies the rinse liquid to the back surface Wb of the rotating substrate W. Here, the first cup 81 collects the rinse liquid that splashes as the substrate W rotates.

[0236] In the drainage mechanism 90, the valve 93b is open, and the valves 92b, 94b, and 95b remain closed, so that the rinse liquid collected in the first cup 81 flows through the pipe 91a and the pipe 93a and is discharged.

[0237] 15(a), a rinse liquid is supplied to the front surface Wa and back surface Wb of the substrate W, and the front surface Wa and back surface Wb of the substrate W are treated with the rinse liquid. The rinse liquid supply unit 40 continues to supply the rinse liquid to the front surface Wa of the rotating substrate W. The back surface processing liquid supply unit 50 continues to supply the rinse liquid to the back surface Wb of the substrate W. In this case, the cup 80 collects the rinse liquid that splashes as the substrate W rotates.

[0238] In the drainage mechanism 90, the valve 94b is opened and the valves 92b, 93b, and 95b are closed. Therefore, the rinse liquid collected in the cup 80 flows into the collected liquid reservoir tank 210 through the pipes 91a and 94a.

[0239] 15(b), a rinse liquid is supplied to the front surface Wa of the substrate W to process the front surface Wa of the substrate W with the rinse liquid, and a recovery liquid is supplied to the back surface Wb of the substrate W to process the back surface Wb of the substrate W with the recovery liquid. The rinse liquid supply unit 40 supplies the rinse liquid to the front surface Wa of the rotating substrate W. The back surface processing liquid supply unit 50 supplies the recovery liquid to the back surface Wb of the substrate W.

[0240] In the drainage mechanism 90, the valve 94b is open, and the valves 92b and 93b are closed. Therefore, the rinse liquid and the recovered liquid collected in the first cup 81 flow into the recovered liquid storage tank 210 through the pipe 91a and the pipe 94a.

[0241] 16(a), a processing liquid is supplied to the front surface Wa of the substrate W, and the front surface Wa of the substrate W is processed with the processing liquid. The shielding member 60 supplies the processing liquid to the front surface Wa of the rotating substrate W. The back surface processing liquid supply unit 50 stops supplying the processing liquid to the back surface Wb of the substrate W.

[0242] Here, the first cup 81 moves from the upper position to the lower position, and the second cup 82 is located at the upper position. Therefore, the second cup 82 faces the side of the substrate W. The second cup 82 collects the processing liquid that splashes as the substrate W rotates.

[0243] In the drainage mechanism 90, the valve 95b is opened and the valves 92b, 93b, and 94b are closed, so that the processing liquid collected in the second cup 82 flows through the pipe 91b and the pipe 95a and is discharged.

[0244] 16(b), an inert gas is supplied to the front surface Wa of the substrate W to blow off the processing liquid on the front surface Wa of the substrate W. The shielding member 60 supplies the inert gas to the front surface Wa of the rotating substrate W. The back surface processing liquid supply unit 50 continues to stop supplying the processing liquid to the back surface Wb of the substrate W. At this time, the substrate holding unit 20 may increase the rotation speed of the substrate W.

[0245] Here, the second cup 82 remains in the upper position. The second cup 82 collects the processing liquid that splashes as the substrate W rotates.

[0246] In the drainage mechanism 90, the valve 95b is open and the valves 92b, 93b, and 94b are closed, so that the processing liquid collected in the second cup 82 flows through the pipe 91b and the pipe 95a and is discharged.

[0247] Thereafter, the shielding member 60 stops the supply of the inert gas, and the substrate holder 20 stops the rotation of the substrate W. In this manner, the substrate W is dried. Thereafter, the substrate W is carried out from the chamber 11.

[0248] The substrate processing apparatus 100 of this embodiment alternately processes the front surface Wa of the substrate W with the first chemical liquid, the second chemical liquid, and the rinse liquid. According to this embodiment, a recovery liquid is supplied to the back surface Wb of the substrate W during at least a part of the period in which the rinse liquid is supplied to the front surface Wa of the substrate W. Therefore, the substrate processing apparatus 100 of this embodiment can reduce the amount of new processing liquid used.

[0249] 16(a), the valve 94b is closed when the shielding member 60 supplies the processing liquid to the front surface Wa of the substrate W, but the valve 94b, through which the rinse liquid and recovery liquid collected in the first cup 81 flow, may remain open when the shielding member 60 supplies the processing liquid to the front surface Wa of the substrate W. This allows the recovery liquid storage tank 210 to recover the rinse liquid and recovery liquid collected in the first cup 81 even when the shielding member 60 supplies the processing liquid to the front surface Wa of the substrate W. The valve 94b may be open for a predetermined time from the start of the period during which the shielding member 60 supplies the processing liquid to the front surface Wa of the substrate W, and may be closed after the predetermined time has elapsed.

[0250] 12 to 16, the cups 80 include the first cup 81 and the second cup 82, but this embodiment is not limited to this. The cups 80 may include three or more cups.

[0251] Next, a substrate processing apparatus 100 according to this embodiment will be described with reference to Figures 1 to 17. Figure 17 is a schematic diagram of the substrate processing apparatus 100 according to this embodiment. The substrate processing unit 10 in Figure 17 has the same configuration as the substrate processing apparatus 100 shown in Figure 12, except that the cup 80 further includes a third cup 83 in addition to the first cup 81 and the second cup 82, and therefore, redundant description will be omitted to avoid redundancy.

[0252] As shown in FIG. 17, the cup 80 has a first cup 81, a second cup 82, and a third cup 83. The third cup 83 is located radially outward of the substrate W relative to the second cup 82. The first cup 81 to the third cup 83 each move up and down in the vertical direction. The first cup 81 to the third cup 83 move up to an upper position located to the side of the substrate W. The first cup 81 to the third cup 83 move down to a lower position located diagonally below the substrate W. The first cup 81 to the third cup 83 collect liquid splashed from the substrate W.

[0253] The third cup 83 is positioned above and overlaps the second cup 82. Therefore, when the second cup 82 is lowered, the third cup 83 can be lowered to the position where the second cup 82 is lowered.

[0254] The drainage mechanism 90 discharges the chemical liquid, rinse liquid, and processing liquid collected in the cups 80 to the outside of the chamber 11. The drainage mechanism 90 has a pipe 91a for discharging the processing liquid collected in the first cup 81, a pipe 91b for discharging the processing liquid collected in the second cup 82, and a pipe 91c for discharging the processing liquid collected in the third cup 83. One end of the pipe 91a is connected to the bottom of the first cup 81. One end of the pipe 91b is connected to the bottom of the second cup 82. One end of the pipe 91c is connected to the third cup 83.

[0255] In the drainage mechanism 90, the pipes 92a and 93a are connected to the pipe 91a, the pipe 94a is connected to the pipe 91b, and the pipe 95a is connected to the pipe 91c.

[0256] For example, the first cup 81 is positioned vertically above and to the side of the substrate W during the period when the first chemical liquid supply unit 30a supplies the first chemical liquid to the substrate W. At this time, the second cup 82 is also positioned above, similar to the first cup 81.

[0257] Furthermore, the first cup 81 is positioned to the side of the substrate W during the period when the rinsing liquid supply unit 40 supplies the rinsing liquid to the substrate W. Thereafter, the first cup 81 is positioned to the side of the substrate W during the period when the second chemical liquid supply unit 30b and the rinsing liquid supply unit 40 supply the second chemical liquid and the rinsing liquid to the substrate W, respectively.

[0258] In this case, the first cup 81 collects the first chemical liquid, the rinse liquid, the second chemical liquid, and the rinse liquid that are scattered as the substrate W rotates. After that, when the period during which the rinse liquid supply unit 40 supplies the rinse liquid to the substrate W ends, the first cup 81 descends vertically downward from the side of the substrate W. In this case, the second cup 82 is positioned on the side of the substrate W.

[0259] Thereafter, the second cup 82 is positioned to the side of the substrate W while the rinse liquid and the recovery liquid supplied to the substrate W flow into the recovery liquid reservoir tank 210 .

[0260] Thereafter, when the shielding member 60 shields the front surface Wa of the substrate W and starts supplying the processing liquid to the substrate W, the second cup 82 descends vertically downward from the side of the substrate W, and the third cup 83 is positioned on the side of the substrate W during the period when the shielding member 60 is supplying the processing liquid to the substrate W. Thereafter, the third cup 83 is positioned on the side of the substrate W during the period when the shielding member 60 is supplying the inert gas to the substrate W. The third cup 83 collects the processing liquid that is scattered as the substrate W rotates. When the period when the shielding member 60 is supplying the inert gas to the substrate W ends, the third cup 83 descends vertically downward from the side of the substrate W.

[0261] The substrate processing apparatus 100 of this embodiment alternately processes the front surface Wa of the substrate W with the first chemical liquid, the second chemical liquid, and the rinse liquid. According to this embodiment, a recovery liquid is supplied to the back surface Wb of the substrate W during at least a part of the period in which the rinse liquid is supplied to the front surface Wa of the substrate W. Therefore, the substrate processing apparatus 100 of this embodiment can reduce the amount of new processing liquid used.

[0262] Next, the substrate processing apparatus 100 of this embodiment will be described with reference to Figures 1 to 20. Figures 18(a) to 20 are schematic diagrams showing the flow of the substrate processing apparatus 100 of this embodiment. Figures 18(a) to 20 are similar to the flow of the substrate processing apparatus 100 described above with reference to Figures 13(a) to 16(b), except that the cup 80 further has a third cup 83 in addition to the first cup 81 and the second cup 82, and therefore, redundant explanations will be omitted to avoid redundancy.

[0263] 18(a), a first chemical liquid is supplied to the front surface Wa and back surface Wb of the substrate W, and the front surface Wa and back surface Wb of the substrate W are treated with the first chemical liquid. The first chemical liquid supply unit 30a supplies the first chemical liquid to the front surface Wa of the rotating substrate W. The back surface processing liquid supply unit 50 supplies the first chemical liquid to the back surface Wb of the rotating substrate W.

[0264] Here, the first cup 81 to the third cup 83 are all located at the upper position. Therefore, the first cup 81 faces the side of the substrate W. The first cup 81 collects the first chemical liquid that splashes as the substrate W rotates.

[0265] In drainage mechanism 90, valve 92b is open, while valves 93b, 94b, and 95b are closed. Therefore, the first chemical liquid collected in first cup 81 flows through pipes 91a and 92a and is discharged.

[0266] 18(b), a rinse liquid is supplied to the front surface Wa and back surface Wb of the substrate W, and the front surface Wa and back surface Wb of the substrate W are treated with the rinse liquid. The rinse liquid supply unit 40 supplies the rinse liquid to the front surface Wa of the rotating substrate W. The back surface processing liquid supply unit 50 supplies the rinse liquid to the back surface Wb of the rotating substrate W. Here, the first cup 81 collects the rinse liquid that splashes as the substrate W rotates.

[0267] In the drainage mechanism 90, the valve 92b is open, and the valves 93b, 94b, and 95b remain closed, so that the rinse liquid collected in the first cup 81 flows through the pipes 91a and 92a and is discharged.

[0268] 18(c), the second chemical liquid is supplied to the front surface Wa and back surface Wb of the substrate W, and the front surface Wa and back surface Wb of the substrate W are treated with the second chemical liquid. The second chemical liquid supply unit 30b supplies the second chemical liquid to the front surface Wa of the rotating substrate W. The back surface treatment liquid supply unit 50 supplies the second chemical liquid to the back surface Wb of the rotating substrate W. Here, the first cup 81 collects the second chemical liquid that splashes as the substrate W rotates.

[0269] In drainage mechanism 90, valve 93b is opened, while valves 92b, 94b, and 95b are closed, so that the second chemical liquid collected in first cup 81 flows through pipe 91a and pipe 93a and is discharged.

[0270] 19(a), a rinse liquid is supplied to the front surface Wa and back surface Wb of the substrate W, and the front surface Wa and back surface Wb of the substrate W are treated with the rinse liquid. A rinse liquid supply unit 40 supplies the rinse liquid to the front surface Wa of the rotating substrate W. A back surface processing liquid supply unit 50 supplies the rinse liquid to the back surface Wb of the rotating substrate W. Here, a first cup 81 collects the rinse liquid that splashes as the substrate W rotates.

[0271] In the drainage mechanism 90, the valve 93b is open, and the valves 92b, 94b, and 95b remain closed, so that the rinse liquid collected in the first cup 81 flows through the pipe 91a and the pipe 93a and is discharged.

[0272] 19(b), a rinse liquid is supplied to the front surface Wa of the substrate W to process the front surface Wa of the substrate W with the rinse liquid, and a recovery liquid is supplied to the back surface Wb of the substrate W to process the back surface Wb of the substrate W with the recovery liquid. The rinse liquid supply unit 40 continues to supply the rinse liquid to the front surface Wa of the rotating substrate W. The back surface processing liquid supply unit 50 supplies the recovery liquid to the back surface Wb of the substrate W.

[0273] Here, the first cup 81 moves from the upper position to the lower position, and the second cup 82 and the third cup 83 are both located at the upper positions. Therefore, the second cup 82 faces the side of the substrate W. The second cup 82 collects the rinse liquid and recovery liquid that splash as the substrate W rotates.

[0274] In the drainage mechanism 90, the valve 94b is opened and the valves 92b, 93b, and 95b are closed. Therefore, the rinse liquid and the recovered liquid collected in the second cup 82 flow through the pipe 91b and the pipe 94a and are recovered in the recovered liquid storage tank 210.

[0275] 19(c), the processing liquid is supplied to the front surface Wa of the substrate W to process the front surface Wa of the substrate W. The shielding member 60 supplies the processing liquid to the front surface Wa of the rotating substrate W. The back surface processing liquid supply unit 50 stops supplying the processing liquid to the back surface Wb of the substrate W.

[0276] Here, the second cup 82 moves from the upper position to the lower position, and the third cup 83 is located at the upper position. Therefore, the third cup 83 faces the side of the substrate W. The third cup 83 collects the processing liquid that splashes as the substrate W rotates.

[0277] In the drainage mechanism 90, the valve 95b is opened and the valves 92b, 93b, and 94b are closed, so that the processing liquid collected in the third cup 83 flows through the pipe 91c and the pipe 95a and is discharged.

[0278] 20 , an inert gas is supplied to the front surface Wa of the substrate W to blow off the processing liquid on the front surface Wa of the substrate W. The shielding member 60 supplies the inert gas to the front surface Wa of the rotating substrate W. The back surface processing liquid supply unit 50 continues to stop supplying the processing liquid to the back surface Wb of the substrate W. At this time, the substrate holding unit 20 may increase the rotation speed of the substrate W.

[0279] Here, the third cup 83 remains in the upper position. The third cup 83 collects the processing liquid that splashes as the substrate W rotates.

[0280] In the drainage mechanism 90, the valve 95b is open, and the valves 92b, 93b, and 94b remain closed, so that the processing liquid collected in the third cup 83 flows through the pipe 91c and the pipe 95a and is discharged.

[0281] Thereafter, the shielding member 60 stops the supply of the inert gas, and the substrate holder 20 stops the rotation of the substrate W. In this manner, the substrate W is dried. Thereafter, the substrate W is carried out from the chamber 11.

[0282] The substrate processing apparatus 100 of this embodiment alternately processes the front surface Wa of the substrate W with the first chemical liquid, the second chemical liquid, and the rinse liquid. According to this embodiment, a recovery liquid is supplied to the back surface Wb of the substrate W during at least a part of the period in which the rinse liquid is supplied to the front surface Wa of the substrate W. Therefore, the substrate processing apparatus 100 of this embodiment can reduce the amount of new processing liquid used.

[0283] The embodiments of the present invention have been described above with reference to the drawings. However, the present invention is not limited to the above embodiments and can be embodied in various forms without departing from the spirit and scope of the present invention. Furthermore, various inventions can be formed by appropriately combining multiple components disclosed in the above embodiments. For example, some components may be omitted from all components shown in the embodiments. Furthermore, components from different embodiments may be appropriately combined. The drawings mainly show each component in a schematic manner to facilitate understanding. The thickness, length, number, spacing, etc. of each component shown may differ from the actual thickness, length, number, spacing, etc. of each component shown in the above embodiments due to the convenience of drawing. Furthermore, the materials, shapes, dimensions, etc. of each component shown in the above embodiments are merely examples and are not particularly limited. Various modifications are possible within a scope that does not substantially deviate from the effects of the present invention.

[0284] 2 and 5 to 20, the front surface Wa of the substrate W faces vertically upward and the back surface Wb of the substrate W faces vertically downward, but this embodiment is not limited to this. The front surface Wa of the substrate W may face vertically downward and the back surface Wb of the substrate W may face vertically upward. In this case, the recovery liquid is supplied to the back surface Wb of the substrate W facing vertically upward.

[0285] 1 , the collecting liquid storage tank 210 is disposed in the processing liquid cabinet 110, but this embodiment is not limited to this. The collecting liquid storage tank 210 may be disposed in a location different from the processing liquid cabinet 110. For example, the collecting liquid storage tank 210 may be disposed in the processing liquid box 120. Alternatively, the collecting liquid storage tank 210 may be disposed in the chamber 11. [Industrial Applicability]

[0286] The present invention is suitably used in a substrate processing apparatus and a substrate processing method. [Explanation of symbols]

[0287] 10. Substrate Processing Unit 11 Chambers 20 Board holding part 30 Chemical supply unit 40 Rinse liquid supply unit 50 Back surface processing liquid supply unit 54 Chemical supply unit 56 Rinse liquid supply unit 58 Recovery liquid supply unit 80 cups 100 Substrate processing apparatus 101 Control device 102 Control section 104 Storage section 110 Processing liquid cabinet 120 Processing liquid box 210 Recovered liquid storage tank W substrate

Claims

1. a chamber containing a substrate having a surface on which a device is provided and a back surface opposite the surface; a substrate holder that holds the substrate in the chamber; a chemical solution supply unit that supplies a chemical solution to the surface of the substrate held by the substrate holder; a rinse liquid supply unit that supplies a rinse liquid to the surface of the substrate held by the substrate holder; a cup for collecting the rinse liquid scattered from the substrate held by the substrate holder; a recovered liquid storage tank that stores the rinse liquid collected in the cup as a recovered liquid; a back surface processing liquid supply unit that supplies the recovery liquid stored in the recovery liquid storage tank to the back surface of the substrate held by the substrate holding unit; A substrate processing apparatus comprising:

2. The substrate processing apparatus according to claim 1 , further comprising a pipe connecting the cup and the collected liquid storage tank, through which the rinse liquid collected in the cup flows.

3. 3 . The substrate processing apparatus according to claim 1 , wherein the back surface processing liquid supply unit supplies the recovery liquid to the back surface of the substrate during a period in which the rinse liquid supply unit supplies the rinse liquid to the front surface of the substrate.

4. 3 . The substrate processing apparatus according to claim 1 , wherein, during a period in which the rinse liquid supply unit supplies the rinse liquid to the front surface of the substrate, the back surface processing liquid supply unit supplies the rinse liquid to the back surface of the substrate and then supplies the recovery liquid.

5. 3. The substrate processing apparatus according to claim 1, wherein while the rinse liquid supply unit supplies the rinse liquid to the front surface of the substrate, the recovery liquid storage tank recovers the rinse liquid supplied to the substrate as a recovery liquid, and the back surface processing liquid supply unit supplies the recovery liquid to the back surface of the substrate.

6. 3. The substrate processing apparatus according to claim 1, wherein the back surface processing liquid supply unit supplies the recovery liquid to the back surface of the substrate while the chemical liquid supply unit supplies the chemical liquid to the front surface of the substrate and while the rinse liquid supply unit supplies the rinse liquid to the front surface of the substrate.

7. a substrate holder holding a substrate having a surface on which a device is provided and a back surface opposite the surface; supplying a chemical solution to the surface of the substrate held by the substrate holder; supplying a rinse liquid to the surface of the substrate held by the substrate holder after supplying the chemical liquid to the surface of the substrate; recovering the rinse liquid supplied to the substrate as a recovered liquid in a recovered liquid storage tank; supplying the recovery liquid from the recovery liquid storage tank to a rear surface of the substrate held by the substrate holder; A substrate processing method comprising:

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