Substrate processing apparatus

Abstract

To provide a substrate processing apparatus capable of wirelessly adjusting the temperature of an inner wall surface of a processing space in which substrate processing is performed.SOLUTION: A substrate processing apparatus for processing a substrate includes a processing chamber in which a processing space for the substrate is formed, a heating mechanism for adjusting the internal temperature of the processing chamber, and a shield member provided inside the processing chamber, positioned at a distance from the inner wall surface of the processing chamber, and defining at least a portion of the side wall of the processing space, and the heating mechanism includes an induction heating element that generates heat by an induction magnetic field to heat at least the shield member, and a magnetic field generating unit that is positioned along the outer wall surface of the processing chamber and generates the induction magnetic field.SELECTED DRAWING: Figure 2

Description

[Technical Field]

[0001] The present disclosure relates to a substrate processing apparatus and a substrate processing method. [Background technology]

[0002] Patent Document 1 discloses a processing apparatus for performing heat treatment on a workpiece. The processing apparatus described in Patent Document 1 includes a processing vessel whose interior is a processing space for the workpiece, and a vessel heating means for heating the sidewall of the processing vessel to create a hot wall state. The vessel heating means includes a rod-shaped cartridge heater embedded in the sidewall of the processing vessel, and a heater power supply connected to the cartridge heater. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Laid-Open No. 2009-144211 Summary of the Invention [Problem to be solved by the invention]

[0004] The technology according to the present disclosure provides a substrate processing apparatus capable of wirelessly adjusting the temperature of the inner wall surface of a processing space where substrate processing is performed. [Means for solving the problem]

[0005] One aspect of the present disclosure is a substrate processing apparatus for processing a substrate, comprising: a processing chamber in which a processing space for the substrate is formed; a heating mechanism for adjusting the internal temperature of the processing chamber; and a shield member provided inside the processing chamber, spaced apart from an inner wall surface of the processing chamber, and defining at least a portion of a side wall of the processing space, wherein the heating mechanism comprises an induction heating element that generates heat using an induction magnetic field to heat at least the shield member, and a magnetic field generating unit that is arranged along the outer wall surface of the processing chamber and generates the induction magnetic field. [Effects of the Invention]

[0006] According to the present disclosure, it is possible to provide a substrate processing apparatus capable of wirelessly adjusting the temperature of the inner wall surface of a processing space in which substrate processing is performed. [Brief explanation of the drawings]

[0007] [Figure 1] 1 is a vertical cross-sectional view showing an example of the configuration of a plasma processing system according to an embodiment of the present invention. [Figure 2] FIG. 2 is a vertical cross-sectional view showing a configuration example of a heating mechanism according to the present embodiment. [Figure 3] FIG. 2 is an explanatory diagram showing the operating principle of a heating mechanism. [Figure 4] FIG. 2 is a schematic cross-sectional view showing an example of the arrangement of a heating mechanism. [Figure 5] FIG. 10 is a schematic cross-sectional view showing another example of the arrangement of the heating mechanism. [Figure 6] 10A and 10B are schematic cross-sectional views showing examples of arrangement of magnetic bodies relative to a shield member. [Figure 7] FIG. 10 is a vertical cross-sectional view showing another example of the configuration of the heating mechanism. [Figure 8] 8 is an explanatory diagram showing an example of the operation of the heating mechanism shown in FIG. 7. [Figure 9] FIG. 10 is a vertical cross-sectional view showing another example of the configuration of the heating mechanism. [Figure 10] FIG. 10 is a vertical cross-sectional view showing another example of the configuration of the heating mechanism. [Figure 11] FIG. 10 is a vertical cross-sectional view showing another example of the configuration of the heating mechanism. [Figure 12] FIG. 10 is a vertical cross-sectional view showing another example of the configuration of the heating mechanism. [Figure 13] FIG. 10 is a vertical cross-sectional view showing another example of the configuration of the heating mechanism. [Figure 14] FIG. 10 is a vertical cross-sectional view showing another example of the configuration of the heating mechanism. [Figure 15] FIG. 10 is a vertical cross-sectional view showing another example of the configuration of the heating mechanism. [Figure 16] FIG. 10 is a vertical cross-sectional view showing another example of the arrangement of the heating mechanism. [Figure 17] FIG. 10 is a vertical cross-sectional view showing another example of the arrangement of the heating mechanism. [Figure 18] FIG. 10 is a vertical cross-sectional view showing another example of the configuration of the shutter mechanism. [Figure 19] FIG. 10 is a perspective view showing another example of the configuration of the shutter mechanism. DETAILED DESCRIPTION OF THE INVENTION

[0008] In the manufacturing process of semiconductor devices, a process gas supplied into a chamber is excited to generate plasma, and various plasma processes such as etching, film formation, and diffusion are performed on a semiconductor substrate (hereinafter simply referred to as "substrate") supported on a substrate support.

[0009] In these plasma processes, the temperature of the sidewall defining the chamber inner wall surface may be adjusted in order to uniformly control the ambient temperature in the processing space where the plasma process is performed and to suppress adhesion of reaction products (hereinafter sometimes referred to as "deposits") to the chamber inner wall surface. Such temperature adjustment of the sidewall is performed by a rod-shaped heater provided inside the sidewall, as disclosed in Patent Document 1, for example.

[0010] Here, the side wall of the chamber, which is the target of temperature adjustment, is a metal partition that separates the vacuum space inside the chamber from the atmospheric space outside the chamber, so the heater power supply that supplies power to the heater installed inside the side wall is typically installed in the atmospheric space outside the chamber.

[0011] However, when the heater power supply is installed in the atmospheric space outside the chamber, heat must be transferred from the atmospheric space to the vacuum space, resulting in reduced energy efficiency. Furthermore, the chamber sidewall, which is the target of temperature control, dissipates heat into the atmospheric space and transfers heat to peripheral units (e.g., the transfer system). Furthermore, the sidewall itself, which is a metal partition, has a large heat capacity, so adjusting the temperature to the desired temperature requires a significant amount of time and energy. Thus, conventional methods for adjusting the temperature of the sidewall have room for improvement, due to the difficulty of raising the temperature of the sidewall and the low energy efficiency.

[0012] Furthermore, when adjusting the temperature of the chamber sidewall by heating with a heater, the heater, which is a heating element, and the heater power supply must be electrically connected by a power supply cable or the like. However, when the heater and the heater power supply are connected using a power supply cable, there is a risk that part of the high frequency waves applied from the RF (Radio Frequency) power supply to the plasma generating electrode during plasma generation may enter the power supply cable as common mode noise. In such cases, abnormal discharge or backflow of high frequency power may occur in the heater power supply system, making it impossible to perform plasma processing properly, or the power supply cable may cause contamination in the processing space.

[0013] The present disclosure has been made in consideration of the above circumstances, and provides a substrate processing apparatus capable of wirelessly adjusting the temperature of the inner wall surface of a processing space where substrate processing is performed. Hereinafter, a plasma processing system as a substrate processing apparatus according to this embodiment will be described with reference to the drawings. Note that in this specification and the drawings, elements having substantially the same functional configuration are designated by the same reference numerals, and redundant description will be omitted.

[0014] <Plasma processing equipment> First, the plasma processing system according to this embodiment will be described with reference to Fig. 1, which is a longitudinal sectional view showing the outline of the configuration of the plasma processing system according to this embodiment.

[0015] The plasma processing system includes an inductively coupled plasma processing apparatus 1 and a control unit 2. The plasma processing apparatus 1 includes a plasma processing chamber 10, a gas supply unit 20, a power supply 30, an exhaust system 40, and a heating mechanism 50. The plasma processing chamber 10 includes a dielectric window 101 and a shutter 60 for opening and closing a substrate (wafer) W loading / unloading port 60a. In one embodiment, the dielectric window 101 is connected to an upper portion of a sidewall 10a of the plasma processing chamber 10 via an insulator ring 102 and forms at least a part of the ceiling of the plasma processing chamber 10. The plasma processing apparatus 1 also includes a substrate support 11, a gas inlet, and an antenna 14. The substrate support 11 is disposed within the plasma processing chamber 10. The antenna 14 is disposed on or above the plasma processing chamber 10 (i.e., on or above the dielectric window 101). The heating mechanism 50 includes a shield member 51 disposed within the plasma processing chamber 10, for example, along the sidewall 10a. A plasma processing space 10s is formed inside the plasma processing chamber 10, and is defined by the dielectric window 101, the shield member 51 of the heating mechanism 50, and the substrate support 11. The plasma processing chamber 10 has at least one gas supply port for supplying at least one processing gas to the plasma processing space 10s, and at least one gas exhaust port for exhausting gas from the plasma processing space 10s.

[0016] The substrate support 11 includes a body member 111 and a ring assembly 112. The body member 111 is fixed to the bottom surface of the plasma processing chamber 10 via a support member 113. The upper surface of the body member 111 has a central region 111a (substrate support surface) for supporting the substrate W and an annular region 111b (ring support surface) for supporting the ring assembly 112. The annular region 111b surrounds the central region 111a in a plan view. The substrate W is disposed on the central region 111a, and the ring assembly 112 is disposed on the annular region 111b so as to surround the substrate W on the central region 111a.

[0017] In one embodiment, the body member 111 includes a base (not shown) and an electrostatic chuck (not shown). The base includes a conductive member. The conductive member of the base functions as a lower electrode. The electrostatic chuck is disposed on the base. The upper surface of the electrostatic chuck has the central region 111a and annular region 111b described above. The ring assembly 112 includes one or more annular members, at least one of which is an edge ring.

[0018] Although not shown, the substrate support 11 may also include a temperature adjustment module configured to adjust at least one of the electrostatic chuck, the ring assembly 112, and the substrate W to a target temperature. The temperature adjustment module may include a heater, a heat transfer medium, a flow path, or a combination thereof. A heat transfer fluid such as brine or gas flows through the flow path. The substrate support 11 may also include a heat transfer gas supply unit configured to supply a heat transfer gas between the back surface of the substrate W and the substrate support surface 111 a.

[0019] The gas inlet is configured to introduce at least one process gas from the gas supply 20 into the plasma processing space 10s. In one embodiment, the gas inlet is a central gas injection (CGI). The central gas injector 13 is disposed above the substrate support 11 and is attached to a central opening formed in the dielectric window 101. The central gas injector 13 has at least one gas supply port 13a, at least one gas flow path 13b, and at least one gas inlet port 13c. The processing gas supplied to the gas supply port 13a passes through the gas flow path 13b and is introduced into the plasma processing space 10s from the gas inlet port 13c. Note that the gas inlet may include one or more side gas injectors (SGIs) attached to one or more openings formed in the sidewall 10a in addition to or instead of the central gas injector 13.

[0020] The gas supply 20 may include at least one gas source 21 and at least one flow controller 22. In one embodiment, the gas supply 20 is configured to supply at least one process gas from a respective gas source 21 through a respective flow controller 22 to the central gas inlet 13. Each flow controller 22 may include, for example, a mass flow controller or a pressure-controlled flow controller. Additionally, the gas supply 20 may include one or more flow modulation devices to modulate or pulse the flow rate of the at least one process gas.

[0021] The power supply 30 includes an RF power supply 31 coupled to the plasma processing chamber 10 via at least one impedance matching circuit. The RF power supply 31 is configured to supply at least one RF signal (RF power), such as a source RF signal and a bias RF signal, to the conductive member (lower electrode) of the substrate support 11 and / or the antenna 14. This causes plasma to be formed from at least one process gas supplied to the plasma processing space 10s. Therefore, the RF power supply 31 can function as at least a part of a plasma generating unit configured to generate plasma from one or more process gases in the plasma processing chamber 10. Furthermore, supplying a bias RF signal to the lower electrode generates a bias potential on the substrate W, thereby attracting ion components in the formed plasma to the substrate W.

[0022] In one embodiment, the RF power supply 31 includes a first RF generating unit 31a and a second RF generating unit 31b. The first RF generating unit 31a is coupled to the antenna 14 and configured to generate a source RF signal (source RF power) for plasma generation via at least one impedance matching circuit. In one embodiment, the source RF signal has a frequency in the range of 13 MHz to 150 MHz. In one embodiment, the first RF generating unit 31a may be configured to generate multiple source RF signals having different frequencies. The generated one or more source RF signals are supplied to the antenna 14.

[0023] The second RF generating unit 31b is coupled to the lower electrode via at least one impedance matching circuit and is configured to generate a bias RF signal (bias RF power). In one embodiment, the bias RF signal has a lower frequency than the source RF signal. In one embodiment, the bias RF signal has a frequency within a range of 400 kHz to 13.56 MHz. In one embodiment, the second RF generating unit 31b may be configured to generate multiple bias RF signals having different frequencies. The generated one or more bias RF signals are supplied to the lower electrode. In various embodiments, at least one of the source RF signal and the bias RF signal may be pulsed.

[0024] The power supply 30 may also include a DC power supply 32 coupled to the plasma processing chamber 10. The DC power supply 32 includes a bias DC generator 32a. In one embodiment, the bias DC generator 32a is connected to the lower electrode and configured to generate a bias DC signal. The generated bias DC signal is applied to the lower electrode. In one embodiment, the bias DC signal may also be applied to another electrode, such as an electrode in an electrostatic chuck. In various embodiments, the bias DC signal may be pulsed. Note that the bias DC generator 32a may be provided in addition to the RF power supply 31 or may be provided instead of the second RF generator 31b.

[0025] The antenna 14 includes one or more coils. In one embodiment, the antenna 14 may include an outer coil and an inner coil arranged coaxially. In this case, the RF power supply 31 may be connected to both the outer coil and the inner coil, or to either the outer coil or the inner coil. In the former case, the same RF generator may be connected to both the outer coil and the inner coil, or separate RF generators may be connected to the outer coil and the inner coil separately.

[0026] The exhaust system 40 may be connected to, for example, a gas exhaust port 10e provided at the bottom of the plasma processing chamber 10. The exhaust system 40 may include a pressure regulating valve and a vacuum pump. The pressure regulating valve regulates the internal pressure of the plasma processing space 10s. The vacuum pump may include a turbomolecular pump, a dry pump, or a combination thereof.

[0027] In one embodiment, the exhaust system 40 also includes a baffle plate 41 arranged around the substrate support 11 in a plan view to separate the plasma processing space 10s from the gas exhaust port 10e. The baffle plate 41 is an annular plate-shaped member with a large number of through-holes that connect the plasma processing space 10s to the gas exhaust port 10e and capture or reflect plasma generated in the plasma processing space 10s to prevent leakage to the gas exhaust port 10e. The baffle plate 41 is arranged parallel to the substrate W placed on the substrate support 11 and is positioned lower than the top surface of the substrate W in the drawing.

[0028] Fig. 2 is a vertical cross-sectional view schematically illustrating the configuration of heating mechanism 50. As shown in Fig. 2, heating mechanism 50 includes a shield member 51 disposed inside plasma processing chamber 10 along sidewall 10a of plasma processing chamber 10, a plurality of induction heating coils 52 disposed outside (on the atmospheric space side of) sidewall 10a along the outer wall surface of sidewall 10a, and a plurality of magnetic bodies 53 disposed inside shield member 51 corresponding to each of induction heating coils 52.

[0029] The shield member 51 is made of a non-magnetic dielectric material such as ceramic or a material with high thermal conductivity such as Al. The shield member 51 is disposed inside the plasma processing chamber 10 so as to cover the sidewall 10a and essentially functions as the inner wall surface of the plasma processing space 10s. The shield member 51 is disposed at a distance from the sidewall 10a, and its ends (upper and lower ends in FIG. 2) are connected to the sidewall 10a via a sealing member 54 having thermal insulation properties. A space of a desired width surrounded by the sidewall 10a, the shield member 51, and the sealing member 54 is configured to be able to maintain, for example, a vacuum atmosphere. In other words, the shield member 51 and the sidewall 10a are thermally isolated by the vacuum insulation space 50s and the sealing member 54 as a thermal insulating layer.

[0030] The shield member 51 is heated by heat generated by the magnetic body 53 (described later) and maintained in a hot wall state at a desired temperature. In this case, in order to reduce the amount of energy required to heat the shield member 51 to the desired temperature, it is desirable to form the shield member 51 as thin as possible while still allowing the magnetic body 53 to be placed inside. In other words, it is desirable to form the shield member 51, which is the object of temperature adjustment, thin to reduce its heat capacity.

[0031] A plurality of induction heating coils 52 serving as magnetic field generators are provided along the outer wall surface of the sidewall 10a of the plasma processing chamber 10. At least one inverter circuit 55 and at least one heating power supply 56 are connected to the plurality of induction heating coils 52. The induction heating coils 52 are connected to the heating power supply 56 via the inverter circuit 55. When power is applied from the heating power supply 56, the induction heating coils 52 generate an induction magnetic field M as shown in FIG. 3 .

[0032] The inverter circuit 55 controls the frequency of the power applied to the induction heating coil 52 from the heating power supply 56. Specifically, for example, it converts 50 / 60 Hz AC from the heating power supply 56 into a high frequency of several tens of kHz or more (for example, 100 kHz to 2 MHz). Any AC (Alternating Current) power supply, such as a general commercial AC power supply, can be used as the heating power supply 56. Note that only one inverter circuit 55 and one heating power supply 56 may be connected to the heating mechanism 50 as shown in FIG. 2, or multiple inverter circuits 55 and heating power supplies 56 may be provided, for example, for each temperature control region for adjusting the atmospheric temperature of the plasma processing space S.

[0033] The magnetic body 53 serving as an induction heating body is made of, for example, a magnetic metal material (e.g., a material containing iron, such as carbon steel, silicon iron, stainless steel, permalloy, or ferrite), and is provided inside the shielding member 51, thereby being configured as one unit with the shielding member 51. As shown in FIG. 3 , an induced current I (eddy current) is induced on the surface of the magnetic body 53 by an induced magnetic field M generated from the induction heating coil 52. The magnetic body 53 generates Joule heat due to the induced current I in accordance with the resistance value of the magnetic body 53. The induced magnetic flux generated by the induction heating coil 52 also generates heat due to hysteresis loss (loss caused by friction between Fe molecules) in the magnetic body 53.

[0034] The induction heating element does not have to be a magnetic metal material as long as it is made of a material that can generate sufficient heat through Joule heating caused by eddy currents, such as aluminum, tungsten, tin, titanium, carbon, silicon, or silicon carbide.

[0035] In addition, in the heating mechanism 50, in order to properly heat the magnetic body 53 by the induction magnetic field M emitted from the induction heating coil 52, a core material made of a material with high magnetic permeability may be provided in the induction heating coil 52 to strengthen the induction magnetic field M emitted from the induction heating coil 52.

[0036] 4, in order to allow the induction magnetic field M emitted from the induction heating coil 52 to act appropriately on the magnetic body 53, the induction heating coil 52 and the magnetic body 53 are arranged so that they at least partially overlap when viewed from the front, preferably so that the entire surface of the induction heating coil 52 overlaps with the magnetic body 53, as shown in FIG. 5. By arranging the induction heating coil 52 and the magnetic body 53 so that they overlap in this manner, the induction magnetic field M emitted from the induction heating coil 52 can act appropriately on the magnetic body 53, causing the magnetic body 53 to generate heat. Furthermore, by arranging the induction heating coil 52 so that the entire surface of the induction heating coil 52 overlaps with the magnetic body 53 as shown in FIG. 5, the induction magnetic field M emitted from the induction heating coil 52 toward at least the magnetic body 53 can be used for induction heating without leakage.

[0037] In the plasma processing apparatus 1, as described above, it is required to uniformly control the ambient temperature in the plasma processing space 10s in order to improve the uniformity of the process characteristics for the substrate W during plasma processing. However, in the plasma processing apparatus 1, the ambient temperature distribution in the plasma processing space 10s may become uneven due to various conditions, such as the geometrical positional relationship of various components arranged in the plasma processing space 10s and the conditions of the processing.

[0038] Therefore, as described above, a plurality of magnetic bodies 53 are provided inside the shield member 51 according to this embodiment. Specifically, as shown in FIG. 6, the plurality of magnetic bodies 53 are provided inside the shield member 51 at desired intervals. Furthermore, a plurality of induction heating coils 52 are provided outside the plasma processing chamber 10 in one-to-one correspondence with the plurality of magnetic bodies 53. When heating the shield member 51 (adjusting the atmospheric temperature in the plasma processing space 10s), the inverter circuit 55 adjusts the frequency of the high-frequency power applied to each of the induction heating coils 52 provided corresponding to each of the magnetic bodies 53 (or each temperature control region formed by a group of induction heating coils 52), thereby making it possible to appropriately adjust the distribution of the surface temperature of the shield member 51 (the atmospheric temperature in the plasma processing space 10s).

[0039] In order to appropriately adjust the atmospheric temperature distribution in the plasma processing space 10s, a movable mechanism for moving a part of the magnetic field generating unit closer to or further away from the induction heating element may be further provided. Specifically, for example, as shown in FIG. 7, an actuator Ac may be connected to the center of the induction heating coil 52.

[0040] The induction heating coil 52 is covered with an insulating film Fm such as a polyimide film, and the actuator Ac is insulated from the induction heating coil 52. The actuator Ac may be made of an insulating material such as quartz to insulate it from the induction heating coil 52. The tip of the actuator Ac is adhered to the insulating film Fm, and driving the actuator Ac moves a part of the induction heating coil 52 (the center of the induction heating coil 52 in the example shown in FIG. 8) close to or away from the induction heating element (magnetic material 53). When a part (center) of the induction heating coil 52 is close to the magnetic body 53, the close part (center) of the magnetic body 53 is heated more strongly than the distant part (end) of the magnetic body 53. On the other hand, when a part (center) of the induction heating coil 52 is separated from the magnetic body 53, the distant part (center) of the magnetic body 53 is heated less strongly than the close part (end) of the magnetic body 53.

[0041] Therefore, by providing a movable mechanism that moves a portion of the magnetic field generating unit closer to or further away from the induction heating unit, it is possible to control the temperature distribution of the induction heating unit (magnetic body 53 in the examples shown in Figures 7 and 8). When multiple magnetic field generating units are provided as shown in Figure 6, a movable mechanism may be provided for each of the magnetic field generating units, or for only some of the magnetic field generating units. Furthermore, a movable mechanism may be provided for each temperature control area formed by a group of magnetic field generating units, or for only some of the temperature control areas formed by a group of magnetic field generating units.

[0042] As described above, the heating mechanism 50 provided in the plasma processing apparatus 1 according to this embodiment heats the shield member 51 arranged inside the side wall 10a of the plasma processing chamber 10 without directly heating the side wall 10a. In this case, the shield member 51 is arranged insulated from the side wall 10a and is formed with a small thickness so as to reduce its heat capacity. Therefore, the amount of energy required to form and maintain a hot wall state during plasma processing can be significantly reduced compared to conventional methods.

[0043] Furthermore, since the temperature of the shield member 51 forming the inner wall of the plasma processing space 10s can be easily adjusted in this manner, it is possible to easily control the state of adhesion of dissociated deposits and reaction products (hereinafter collectively referred to as "depots") from the processing gas during plasma processing to the shield member 51. That is, for example, by maintaining the temperature of the shield member 51 at a high temperature, it is possible to appropriately suppress adhesion of deposits to the shield member 51.

[0044] Furthermore, in this embodiment, magnetic body 53 provided inside shield member 51 can be inductively heated wirelessly using induction magnetic field M emitted from induction heating coil 52, without being electrically connected to induction heating coil 52 provided outside plasma processing chamber 10. In other words, it is possible to eliminate the need for a power supply cable that connects a heating body to a power source in conventional temperature adjustment means for a plasma processing chamber.

[0045] As described above, in the past, there was a risk that the bias RF signal supplied from the RF power supply 31 to the lower electrode during plasma processing would be transmitted as common mode noise to the power supply cable connecting the heating element (e.g., a heater) and the heater power supply. In this regard, in the present embodiment, the power supply cable connecting the induction heating coil 52 and the magnetic element 53 can be omitted as described above, and therefore noise components do not enter the heating power supply system via the power supply cable as in the past. In particular, in the present embodiment, the induction heating coil 52 and the heating power supply 56 for generating the induction magnetic field M are provided outside the plasma processing chamber 10, which further appropriately prevents noise components from entering the heating power supply system.

[0046] Furthermore, in this embodiment, there is no need to connect a power supply cable to the magnetic body 53; in other words, there is no need to arrange a power supply cable in a vacuum space, so the power supply cable does not become a source of contamination.

[0047] Returning to the explanation of Figure 1. The controller 2 processes computer-executable instructions that cause the plasma processing apparatus 1 to perform various processes described in this disclosure. The controller 2 may be configured to control each element of the plasma processing apparatus 1 to perform various processes described herein. In one embodiment, part or all of the controller 2 may be included in the plasma processing apparatus 1. The controller 2 may include, for example, a computer 2a. The computer 2a may include, for example, a processing unit (CPU: Central Processing Unit) 2a1, a storage unit 2a2, and a communication interface 2a3. The processing unit 2a1 may be configured to perform various control operations based on programs stored in the storage unit 2a2. The storage unit 2a2 may include a random access memory (RAM), a read-only memory (ROM), a hard disk drive (HDD), a solid state drive (SSD), or a combination thereof. The communication interface 2a3 may communicate with the plasma processing apparatus 1 via a communication line such as a local area network (LAN).

[0048] Although various exemplary embodiments have been described above, the present invention is not limited to the above-described exemplary embodiments, and various additions, omissions, substitutions, and modifications may be made. Furthermore, elements in different embodiments may be combined to form other embodiments.

[0049] For example, in this embodiment, the plasma processing system is an inductively coupled plasma (ICP) system. Although the above description has been given taking as an example a case where the plasma processing apparatus 1 is a capacitively coupled plasma (CCP) type, the configuration of the plasma processing system is not limited to this. Coupled Plasma, ECR plasma (Electron-Cyclotron-resonance plasma), Helicon wave excited plasma (HWP) The plasma processing device may have a processing unit including a plasma generating unit such as AC (Alternating Wave Plasma) or Surface Wave Plasma (SWP). Processing equipment including various types of plasma generating units may be used, including a direct current (DC) plasma generating unit and a direct current (DC) plasma generating unit.

[0050] <Substrate Processing Method Using Plasma Processing Apparatus> Next, a description will be given of an example of a method for processing the substrate W in the plasma processing apparatus 1 configured as above. In the plasma processing apparatus 1, any plasma processing such as etching processing, film formation processing, diffusion processing, etc. is performed on the substrate W depending on the purpose.

[0051] First, the shutter 60 is opened and the substrate W is carried into the plasma processing chamber 10, and the substrate W is placed on the electrostatic chuck of the substrate support 11. Once the substrate W is placed on the electrostatic chuck, the shutter 60 is closed, sealing the interior of the plasma processing chamber 10. Next, a voltage is applied to the attraction electrode of the electrostatic chuck, and the substrate W is attracted and held by the electrostatic chuck by electrostatic force.

[0052] After the substrate W is attracted and held by the electrostatic chuck, the interior of the plasma processing chamber 10 is depressurized to a predetermined vacuum level. Next, a processing gas is supplied from the gas supply unit 20 to the plasma processing space 10s via the central gas inlet 13. Furthermore, source RF power for plasma generation is supplied from the first RF generator 31a to the antenna 14, thereby exciting the processing gas to generate plasma. At this time, bias RF power may be supplied from the second RF generator 31b to the lower electrode. Then, the substrate W is subjected to the desired plasma processing in the plasma processing space 10s by the action of the generated plasma.

[0053] During plasma processing of the substrate W, the ambient temperature of the plasma processing space 10s is adjusted by the operation of the heating mechanism 50 provided inside the shield member 51. Specifically, an induction magnetic field M is generated by applying high-frequency power from a heating power supply 56 to an induction heating coil 52, which induces an induction current I (eddy current) on the surface of, for example, a magnetic body 53, thereby inductively heating the magnetic body 53 and adjusting the surface temperature of the shield member 51 forming the inner wall surface of the plasma processing space 10s.

[0054] The surface temperature of the shield member 51 may be controlled to be constant during a series of plasma processing steps performed in the plasma processing apparatus 1, or may be controlled to be changed as appropriate depending on the processing step.

[0055] Specifically, for example, if there is a bias in the ambient temperature of the plasma processing space 10s, temperature control may be performed independently for each induction heating coil 52 (or for each of the temperature control regions described above) to eliminate such a bias in the ambient temperature and make the temperature of the plasma processing space 10s uniform throughout. Furthermore, for example, in a series of plasma processes in the plasma processing apparatus 1, temperature control may be performed so that the surface temperature of the shield member 51 is high in process steps in which a large amount of deposits are generated, and the temperature of the shield member 51 is low (lower than the surface temperature in process steps in which a large amount of deposits are generated) in process steps in which a small amount of deposits are generated. The surface temperature of the shield member 51 can be controlled, for example, by adjusting the frequency of the current supplied to the induction heating coil 52 using the inverter circuit 55.

[0056] The adjustment of the surface temperature of the shield member 51 may be started after the plasma processing has started in the plasma processing apparatus 1, or may be started before the plasma processing starts.

[0057] When the plasma processing is terminated, the supply of source RF power from the first RF generating unit 31a and the supply of processing gas from the gas supply unit 20 are stopped. If bias RF power has been supplied during the plasma processing, the supply of the bias RF power is also stopped.

[0058] Next, the temperature adjustment of the shield member 51 by the heating mechanism 50 and the attraction and holding of the substrate W by the electrostatic chuck are stopped, and the substrate W and the electrostatic chuck after the plasma processing are de-staticized. Thereafter, the substrate W is detached from the electrostatic chuck and carried out from the plasma processing apparatus 1. This completes the series of plasma processing steps.

[0059] <Actions and Effects of the Substrate Support According to the Present Disclosure> As described above, according to the plasma processing apparatus 1 of this embodiment, the shield member 51 forming the inner wall surface of the plasma processing space 10s is provided inside the plasma processing chamber 10, and the shield member 51 is heated by the heating mechanism 50 to control the atmospheric temperature of the plasma processing space 10s. As a result, there is no need to heat the sidewall 10a of the plasma processing chamber 10, and therefore the amount of energy required to form and maintain the inner wall surface of the plasma processing space 10s in a hot wall state during plasma processing can be significantly reduced compared to the conventional method, i.e., the energy efficiency related to plasma processing can be significantly improved.

[0060] Furthermore, according to this embodiment, the shield member 51 forming the inner wall surface of the plasma processing space 10s is thermally separated from the side wall 10a of the plasma processing chamber 10, which has a large heat capacity, and is formed with a small thickness to reduce the heat capacity. This allows the heat generated by the magnetic body 53 to be appropriately used to heat the shield member 51, shortening the time required to heat the shield member 51 and significantly shortening the time required to start up the plasma processing process.

[0061] Furthermore, since the temperature of the shield member 51 (the inner wall surface of the plasma processing space 10s) can be easily adjusted in this manner, it is possible to easily control the adhesion of deposits to the shield member 51 by adjusting the surface temperature of the shield member 51 according to the plasma processing process, for example. In other words, this allows stable plasma processing of the substrate W.

[0062] Furthermore, according to this embodiment, the magnetic body 53 provided inside the shield member 51 can be inductively heated wirelessly using the induction magnetic field M emitted from the induction heating coil 52 provided outside the plasma processing chamber 10, without being electrically connected to the induction heating coil 52. That is, the power supply cable that connects the heating body to the power supply in the temperature control means of the conventional plasma processing chamber can be eliminated. This prevents a portion of the high-frequency power supplied from the RF power supply 31 to the lower electrode during plasma processing from entering as a noise component into the heating power supply system that generates the induction magnetic field M in the induction heating coil 52, thereby appropriately reducing the risk of abnormal discharge, backflow of high-frequency current, or contamination caused by the installation of a power supply cable as in the conventional case.

[0063] Furthermore, according to this embodiment, since there is no need to connect a power supply cable or the like to the magnetic body 53, it is possible to further reduce the need for an RF cut filter that has conventionally been provided in conjunction with a power supply cable to suppress the above-mentioned abnormal discharge and backflow of high-frequency current. This reduces the space required for installing the RF cut filter and also reduces the number of components of the heating mechanism 50 compared to conventional devices, meaning that the space and costs required for installing the heating mechanism 50 can be appropriately reduced.

[0064] 6, the shield member 51 according to this embodiment has a plurality of magnetic bodies 53 arranged inside, and the frequency of the current supplied to each induction heating coil 52 (or each temperature control area formed by a group of induction heating coils 52) corresponding to each magnetic body 53 is controlled by an inverter circuit, thereby enabling independent temperature control for each induction heating coil 52 (each temperature control area). As a result, even if a deviation occurs in the distribution of the ambient temperature in the plasma processing space 10s during plasma processing, for example, the deviation in the temperature distribution can be properly eliminated, and the plasma processing of the substrate W can be properly performed.

[0065] 2, when a plurality of induction heating coils 52 are arranged side by side outside the plasma processing chamber 10 corresponding to the plurality of magnetic bodies 53, the induction magnetic fields M emitted from adjacent induction heating coils 52 may interfere with each other, which may prevent the magnetic bodies 53 corresponding to the respective induction heating coils 52 from being properly heated. Specifically, for example, the induction magnetic field M emitted from one induction heating coil 52 may act on a magnetic body 53 provided corresponding to another adjacent induction heating coil 52, which may prevent the magnetic body 53 from being properly heated.

[0066] Therefore, in order to suppress interference of the induction magnetic field M, a magnetic shield 57 that reflects and absorbs the induction magnetic field M may be provided between adjacent induction heating coils 52. As the magnetic shield 57, a plate-shaped member having a relative permeability μ>1, such as stainless steel, can be preferably selected.

[0067] Fig. 9 is an explanatory diagram showing an example of installation of a magnetic shield 57. As shown in Fig. 9, the magnetic shield 57 is provided between adjacent induction heating coils 52, and has a wire diameter larger than that of the induction heating coils 52. More specifically, the magnetic shield 57 is provided so as to surround the induction heating coil 52 in a front view. This prevents the induction magnetic field M emitted from the induction heating coil 52 from leaking in adjacent directions, suppresses interference of the induction magnetic field M, and allows the magnetic body 53 (substrate W) to be appropriately heated.

[0068] 10, a magnetic shield 57 may be further disposed on the opposite side (atmospheric space side) of the sidewall 10a (magnetic body 53) of the plasma processing chamber 10 along the surface direction of the induction heating coil 52. In other words, a magnetic shield 57 may be further disposed outside the plasma processing chamber 10, sandwiching the induction heating coil 52 therebetween. In this way, by further providing the magnetic shield 57 on the opposite side (atmospheric space side) of the magnetic body 53 along the surface direction of the induction heating coil 52, a portion of the induction magnetic field M emitted from the induction heating coil 52 toward the atmospheric space side can be reflected toward the magnetic body 53. This improves the directivity of the induction magnetic field M toward the magnetic body 53, thereby further improving the heating efficiency of the magnetic body 53 (shield member 51).

[0069] In the embodiment, the directionality of the induced magnetic field M toward the magnetic body 53 side is improved by blocking the surfaces of the induction heating coil 52 other than the magnetic body 53 side with the magnetic shield 57, but if it is desired to improve the directionality of the induced magnetic field M in other directions, for example, the installation position of the magnetic shield 57 may be changed as appropriate.

[0070] In the above embodiment, as shown in Figures 2 and 6, induction heating coils 52 are arranged side by side on the entire surface of shielding member 51, that is, the entire surface of shielding member 51 is configured to be temperature adjustable, but the arrangement of induction heating coils 52 is not limited to this.

[0071] Specifically, if a magnetic body 53 is arranged on at least a portion of the surface of the shield member 51, in other words, on at least a portion of the inner wall surface of the plasma processing space 10s, the heat generated by the magnetic body 53 can heat the shield member 51, thereby adjusting the ambient temperature of the plasma processing space 10s.

[0072] 2, for example, a plurality of magnetic bodies 53 are arranged in one-to-one correspondence with a plurality of induction heating coils 52 arranged within the plane of shield member 51. In other words, although the same number of induction heating coils 52 and magnetic bodies 53 are installed in plasma processing apparatus 1, the number of induction heating coils 52 and magnetic bodies 53 installed is not limited to this.

[0073] 11, one magnetic body 53 may be induction heated by a plurality of (two in the illustrated example) induction heating coils 52. This allows the number of magnetic bodies 53 to be placed inside the shield member 51 to be reduced, and the cost associated with installing the heating mechanism 50 to be reduced.

[0074] In the above embodiment, the magnetic body 53 is disposed inside the shield member 51, but the configuration of the heating mechanism 50 is not limited to this. For example, as shown in Fig. 12, the magnetic body 53 may be configured as a separate body from the shield member 51, and the magnetic body 53 may be provided on the surface of the shield member 51 opposite to the plasma processing space 10s. In this case, the above-mentioned vacuum insulation space 50s is formed between the magnetic body 53 and the side wall 10a.

[0075] By configuring the shield member 51 and the magnetic body 53 as separate bodies in this way, it is not necessary to provide the magnetic body 53 inside, and therefore the thickness of the shield member 51 can be further reduced. In other words, the shield member 51 can be heated more efficiently. Furthermore, even when the shield member 51 and the magnetic body 53 are configured as separate bodies in this way, the above-mentioned vacuum insulation space 50s is formed between the magnetic body 53 and the side wall 10a, so heat transfer from the magnetic body 53 to the side wall 10a is suppressed, and the shield member 51 can be heated more appropriately.

[0076] The heating mechanism 50 according to the above embodiment may be configured to allow a heat transfer fluid (e.g., brine or gas) to flow through the vacuum insulation space 50s formed between the shield member 51 (magnetic body 53 in the example shown in FIG. 12) and the sidewall 10a of the plasma processing space 10s. In other words, as shown in FIGS. 13 and 14, the vacuum insulation space 50s may be connected to a fluid supply unit 58 that supplies the heat transfer fluid L to the vacuum insulation space 50s and a fluid discharge unit 59 that discharges the heat transfer fluid L from the vacuum insulation space 50s.

[0077] In such a case, for example, when the heat transfer fluid L is not flowing through the vacuum insulation space 50s (the vacuum insulation space 50s is in a vacuum state) as shown in Figure 13, the shield member 51 and the side wall 10a are thermally separated, and the shield member 51 can be efficiently heated by the heat generated by the magnetic body 53. 14, for example, when a heat transfer fluid L is flowing through the vacuum insulation space 50s, the shield member 51 and the side wall 10a are thermally connected by the heat transfer fluid L. That is, heat is transferred from the heated shield member 51 to the side wall 10a via the heat transfer fluid L, thereby cooling the shield member 51. By configuring the vacuum insulation space 50s so that the heat transfer fluid L can flow through it, and by controlling the flow of the heat transfer fluid L, it is possible to more appropriately perform cooling in addition to heating as temperature adjustment of the shield member 51. This makes it possible to more appropriately adjust the surface temperature of the shield member 51 (the ambient temperature of the plasma processing space 10s), and in other words, to more appropriately perform plasma processing on the substrate W.

[0078] Instead of switching between heating and cooling the shield member 51 and the side wall 10a by passing the heat transfer fluid L through the vacuum insulation space 50s in this manner, the shield member 51 may be configured to be movable within the plasma processing space 10s, so that the shield member 51 and the side wall 10a can be physically in contact with each other. As a result, for example, when the shield member 51 and the side wall 10a are separated from each other, the shield member 51 is heated, and when the shield member 51 and the side wall 10a are in contact with each other, the shield member 51 is cooled.

[0079] In the above embodiment, the shield member 51 and the side wall 10a are thermally isolated by forming a vacuum insulation space 50s as an insulating layer between the shield member 51 and the side wall 10a, but the configuration of the insulating layer is not limited to this. Specifically, for example, the shield member 51 can be thermally isolated from the side wall 10a by connecting the shield member 51 to the side wall 10a via an insulating member (not shown) as an insulating layer, which allows the shield member 51 to be heated efficiently.

[0080] However, when the shield member 51 and the side wall 10a are connected via a heat insulating member in this way, it is not possible to cool the shield member 51 as described above. That is, for example, it becomes impossible to properly circulate the heat transfer fluid L, and it becomes impossible to bring the shield member 51 and the side wall 10a into direct contact with each other. In view of this, it is desirable that the heat insulating layer formed between the shield member 51 and the side wall 10a be a vacuum heat insulating space 50s.

[0081] In the above embodiment, the induction heating coil 52 is formed of a circular coil member, and the magnetic body 53 is formed of a rectangular plate member, but the shapes of the induction heating coil 52 and the magnetic body 53 are not limited to these as long as they can generate heat in the magnetic body 53 by induction heating. That is, for example, the induction heating coil 52 may be formed in a rectangular shape or may be made of a plate member. Also, the magnetic body 53 may be formed in a circular shape or may be made of a coil member.

[0082] In this way, the induction heating coil 52 and the magnetic body 53 can be configured in any shape, but from the viewpoint of uniformly controlling the wall surface temperature of the shield member 51 and the ambient temperature of the plasma processing space 10s, it is desirable that the induction heating coil 52 and the magnetic body 53 have shapes that allow them to be evenly spread over the entire surface of the shield member 51 (for example, a rectangular arrangement or a honeycomb arrangement).

[0083] In the above embodiment, the shield member 51 is arranged to cover the entire surface of the side wall 10a of the plasma processing chamber 10, and the magnetic body 53 is arranged in at least a part of the inside of the shield member 51 as shown in FIG. 6, but the configuration of the heating mechanism 50 is not limited to this.

[0084] For example, the shield member 51 does not need to be disposed so as to cover the entire surface of the sidewall 10a, but may be disposed only on at least a portion of the sidewall 10a, for example, the area where the magnetic material 53 is provided, as shown in Fig. 15. In other words, the shield member 51 does not need to constitute the entire inner wall surface of the plasma processing space 10s, but may constitute at least a portion of the inner wall surface. In this case, the plasma processing space 10s is defined by the dielectric window 101, the sidewall 10a, the shield member 51 of the heating mechanism 50, and the substrate support 11.

[0085] In the above embodiment, the heating mechanism 50 is arranged along the side wall 10a of the plasma processing chamber 10 so that the shield member 51 forms the inner wall surface of the plasma processing space 10s, but the arrangement of the heating mechanism 50 is not limited to this.

[0086] Specifically, as shown in FIG. 16, a heating mechanism 50 may be further provided in a member forming the plasma processing space 10s, which is a region where there is a concern of deposits adhering due to exposure to plasma during plasma processing.

[0087] More specifically, as shown in Fig. 16, for example, a heating mechanism 50a may be provided that is capable of heating a dielectric window 101 that constitutes the ceiling of the plasma processing chamber 10. In such a case, the magnetic body 53 may be provided inside a shield member 51 that is arranged to be thermally isolated from the dielectric window 101 by the method shown in Fig. 2, or may be arranged directly inside the dielectric window 101 as shown in Fig. 16. Even in such a case, the heat capacity of the dielectric window 101 is smaller than at least the heat capacity of the sidewall 10a of the plasma processing chamber 10, so that the dielectric window 101 can be appropriately heated.

[0088] 16, a heating mechanism 50b may be provided that is arranged to be able to heat an insulator ring 102 provided between the dielectric window 101 and the side wall 10a. In such a case, the magnetic body 53 may be arranged directly inside the insulator ring 102. Furthermore, for example, if the insulator ring 102 is small and it is difficult to arrange the magnetic body 53 inside, the insulator ring 102 may be heated indirectly by heating the dielectric window 101 or the side wall 10a near the insulator ring 102.

[0089] 16, a heating mechanism 50c may be provided that is capable of heating a shutter 60 that constitutes at least a part of the sidewall 10a of the plasma processing chamber 10. In this case, the magnetic body 53 may be directly disposed inside the shutter 60, or the shutter 60 may be indirectly heated by heating the nearby sidewall 10a. However, if the magnetic body 53 is directly disposed inside the shutter 60, the induction heating coil 52 for heating the magnetic body 53 cannot be disposed in the opening that forms the loading / unloading port 60a. Therefore, the induction heating coil 52 for heating the magnetic body 53 disposed inside the shutter 60 may be disposed on the outer wall surface of the sidewall 10a, for example, along the periphery of the loading / unloading port 60a, as shown in FIG.

[0090] 16, a heating mechanism 50d may be provided that is capable of heating the baffle plate 41 that separates the plasma processing space 10s from the gas exhaust port 10e. In this case, the magnetic body 53 may be directly disposed inside the baffle plate 41, or the baffle plate 41 may be indirectly heated by heating the nearby side wall 10a or substrate support 11, as shown in FIG.

[0091] 16, the heating mechanism 50 may be arranged to heat various components constituting the plasma processing space 10s in addition to or instead of the shield member 51 provided along the sidewall 10a. In this way, by adjusting the inner surface temperature of the plasma processing chamber 10 constituting the plasma processing space 10s, it is possible to easily control the adhesion of deposits to the inner surface of the plasma processing chamber 10 (plasma processing space 10s). In other words, this allows stable plasma processing of the substrate W.

[0092] Furthermore, in the above embodiment, the heating mechanism 50 is disposed so as to heat the members that form the plasma processing space 10s, but the heating mechanism 50 may be disposed at a different location.

[0093] Specifically, as shown in FIG. 17, a heating mechanism 50e may be provided inside the plasma processing chamber 10, capable of heating the wall portion of the exhaust space formed downstream of the baffle plate 41 in the exhaust path (more specifically, the substrate support 11 constituting the lower electrode, the support member 113 of the substrate support 11, or the wall portion of the plasma processing chamber 10), or the vicinity of the gas exhaust port 10e. There is also a risk of deposits adhering downstream of the baffle plate 41 in the exhaust path due to, for example, the penetration of plasma from the plasma processing space 10s or the influence of impurities contained in the exhaust gas. Therefore, by configuring the downstream side of the exhaust path to be temperature adjustable by the heating mechanism 50, it is possible to appropriately suppress the adhesion of such deposits.

[0094] In the above embodiment, the shutter 60 that opens and closes the loading / unloading port 60a is provided on a portion of the circumferential surface of the side wall 10a of the plasma processing chamber 10, but the configuration of the shutter mechanism is not limited to this. Specifically, for example, in a shutter mechanism according to another embodiment, the shutter 60 that opens and closes the loading / unloading port 60a shown in FIG. 1 and the shield member 51 of the heating mechanism 50 may be configured integrally.

[0095] In addition, in the example shown in FIG. 17, the temperature of the exhaust path is adjusted by the heating mechanism 50 arranged on the support member 113, but instead of or in addition to this, the inner side of the support member 113, i.e., the lower space of the substrate support 11, may be configured to be temperature adjustable.

[0096] 18 and 19 are a longitudinal cross-sectional view and a perspective view showing the outline of the configuration of a shutter mechanism 150 according to another embodiment. As shown in the figures, the shutter mechanism 150 that opens and closes the loading / unloading port 60a may have a valve body 151 in which the shutter and the deposit shield are integrally configured, and an elevating mechanism 152 that allows the valve body 151 to be raised and lowered freely.

[0097] Valve element 151 has an annular shape that fits along the inner periphery of sidewall 10a of plasma processing chamber 10, i.e., is disposed so as to surround the entire periphery of substrate support 11 disposed inside plasma processing chamber 10. Valve element 151 is configured to be freely raised and lowered by the operation of lifting mechanism 152, and can be moved between a closing position and a retracted position of loading / unloading port 60a by this lifting and lowering operation.

[0098] As described above, the valve body 151 is positioned to cover at least a portion of the side wall 10a of the plasma processing chamber 10 when the loading / unloading port 60a is closed, and can function as a shielding member that functions as the actual inner wall surface of the plasma processing space 10s.

[0099] Even when the shutter mechanism 150 is provided in this manner, that is, when the valve body 151 is configured in an annular shape, the heating mechanism 50 according to the technology of the present disclosure can be applied. In other words, the heating mechanism 50 may be provided so as to be able to heat the shutter mechanism 150. In such a case, the magnetic body 53 may be disposed directly inside the valve body 151, or the magnetic body 53 may indirectly heat the valve body 151 by heating the nearby side wall 10a.

[0100] Furthermore, for example, as shown in FIG. 18, when a valve body 151 is provided in the shutter mechanism 150, the heating mechanism 50 may be arranged so as to heat the entire area other than the position where the substrate W loading / unloading port (opening) is formed in the side wall 10a of the plasma processing chamber 10, in other words, other than the part facing the opening in the internal space of the plasma processing chamber 10.

[0101] In the above embodiment, the temperature of the shield member 51 is adjusted during plasma processing in the plasma processing apparatus 1, but the timing of adjusting the temperature of the shield member 51 is not limited to this. Specifically, for example, the shield member 51 may be heated after the cleaning process of the plasma processing apparatus 1 is performed and before the substrate W is loaded.

[0102] Immediately after the cleaning process of the plasma processing apparatus 1, the cleaning liquid used in the cleaning process may remain inside the plasma processing chamber 10. In such cases, chemical effects such as corrosion may occur in the areas where the cleaning liquid remains, and deposits generated by the plasma processing may accumulate. Furthermore, if the remaining cleaning liquid during the plasma processing is scattered and adheres to the substrate W, this may deteriorate the process results of the substrate W.

[0103] Therefore, in the plasma processing apparatus 1 according to this embodiment, after the cleaning process, the shield member 51 is heated before the substrate is loaded, thereby removing the cleaning liquid remaining inside the plasma processing chamber 10. This makes it possible to prevent the above-mentioned problems caused by the remaining cleaning liquid from occurring. Furthermore, in this embodiment, as described above, the shield member 51 is heated without heating the sidewall 10a of the plasma processing chamber 10, so the temperature of the shield member 51 can be immediately raised to the temperature required to remove the cleaning liquid. In other words, because the shield member 51 is heated efficiently, the time required to start up the plasma processing apparatus 1 can be appropriately reduced.

[0104] The embodiments disclosed herein should be considered to be illustrative in all respects and not restrictive, and the above-described embodiments may be omitted, substituted, or modified in various ways without departing from the scope and spirit of the appended claims.

[0105] For example, in the above embodiment, the plasma processing apparatus 1 that performs plasma processing on the substrate W has been described with reference to an example in which the ambient temperature of the processing space (the surface temperature of the shield member 51) is adjusted by the heating mechanism 50, but the type of substrate processing apparatus in which the heating mechanism 50 is installed is not limited to this. The processing apparatus in which the heating mechanism 50 is installed can be arbitrarily selected from, for example, a heat treatment apparatus such as a CVD (Chemical Vapor Deposition) apparatus or an annealing apparatus, or a transport apparatus that transports the substrate W. In particular, any processing apparatus that needs to adjust the ambient temperature of the processing space (or the sidewall temperature of the processing chamber) during substrate processing can preferably enjoy the effects of the technology according to the present disclosure. [Explanation of symbols]

[0106] 1. Plasma processing equipment 10 Plasma Processing Chamber 10a side wall 10s Plasma treatment space 50s Vacuum Insulated Space 51 Shielding material 52 Induction heating coil 53 Magnetic material M Induction magnetic field W substrate

Claims

1. A substrate processing apparatus for processing a substrate, a processing chamber in which a processing space for the substrate is formed; a heating mechanism for adjusting the internal temperature of the processing chamber; a shield member provided inside the processing chamber, spaced apart from an inner wall surface of the processing chamber, and defining at least a portion of a side wall of the processing space; The heating mechanism includes: an induction heating element that generates heat by an induction magnetic field to heat at least the shielding member; a magnetic field generating unit disposed along an outer wall surface of the processing chamber and configured to generate the induction magnetic field.

2. 2. The substrate processing apparatus according to claim 1, further comprising a heat insulating layer for insulating the shield member from an inner wall surface of the processing chamber.

3. The substrate processing apparatus according to claim 2 , wherein a vacuum heat insulating space is formed as the heat insulating layer between the shield member and an inner wall surface of the processing chamber.

4. a fluid supply unit that supplies a heat transfer fluid to the vacuum insulation space; The substrate processing apparatus according to claim 3 , further comprising: a fluid discharge unit that discharges the heat transfer fluid from the vacuum insulation space.

5. The substrate processing apparatus according to claim 1 , wherein the induction heating element is disposed inside the shield member.

6. The substrate processing apparatus according to claim 2 , wherein the induction heating element is disposed on a wall surface of the shield member on the side of the heat insulating layer.

7. a shutter mechanism including a valve body that opens and closes a substrate loading / unloading port formed in a sidewall of the processing chamber, and a lifting mechanism that allows the valve body to be raised and lowered inside the processing chamber; The substrate processing apparatus according to claim 1 , wherein the shield member is integral with the valve body of the shutter mechanism.

8. The substrate processing apparatus according to claim 1 , wherein the induction heating element is disposed so as to at least partially overlap with the magnetic field generating unit when viewed from the front.

9. The substrate processing apparatus according to claim 8 , wherein the induction heating element is disposed so that the entire surface of the induction heating element overlaps with the magnetic field generating unit when viewed from the front.

10. The substrate processing apparatus according to claim 1 , wherein the induction heating element is formed of a plate member or a coil member.

11. 2. The substrate processing apparatus according to claim 1, wherein the induction heating element is made of an iron-containing material including any one of carbon steel, silicon iron, stainless steel, permalloy, and ferrite, or at least any one of aluminum, tungsten, tin, titanium, carbon, silicon, and silicon carbide.

12. the substrate processing apparatus includes a plurality of the induction heating elements and a plurality of the magnetic field generating units, The substrate processing apparatus according to claim 1 , wherein the shield member is configured to be capable of heating each of a plurality of predetermined temperature control regions independently.

13. The substrate processing apparatus according to claim 12 , wherein the substrate processing apparatus is provided with the same number of induction heating elements and magnetic field generating units such that one induction heating element corresponds to one magnetic field generating unit.

14. The substrate processing apparatus according to claim 13 , wherein a plurality of the induction heating elements are provided in correspondence with one magnetic field generating unit.

15. The substrate processing apparatus is a plasma processing apparatus that performs plasma processing on the substrate, a plurality of the heating mechanisms are arranged in the plasma processing apparatus; The substrate processing apparatus of any one of claims 1 to 14, wherein the plurality of heating mechanisms are capable of heating at least one of a dielectric window forming the ceiling of the processing space, an insulator ring connecting the dielectric window and the processing chamber, an exhaust space for exhausting the inside of the processing space, a baffle plate separating the processing space from the exhaust space, or a shutter mechanism for opening and closing a substrate loading / unloading port formed on a side wall of the processing chamber.

16. 15. The substrate processing apparatus according to claim 1, further comprising a magnetic shield that suppresses transmission of the induction magnetic field and is provided so as to surround the magnetic field generating unit in a front view.

17. 15. The substrate processing apparatus according to claim 1, further comprising a magnetic shield for suppressing transmission of the induction magnetic field, the magnetic shield being provided outside the processing chamber across the magnetic field generating unit.

18. The substrate processing apparatus according to claim 16 , wherein the magnetic shield is made of a material having a relative magnetic permeability of 1 or less.

19. 15. The substrate processing apparatus according to claim 1, further comprising a drive mechanism for moving a part of said magnetic field generating unit closer to or farther away from said induction heating element.

20. A substrate processing apparatus for processing a substrate, a processing chamber in which a processing space for the substrate is formed; a heating mechanism for adjusting the internal temperature of the processing chamber; a shield member provided inside the processing chamber, spaced apart from an inner wall surface of the processing chamber, and defining at least a portion of a side wall of the processing space; The heating mechanism includes: an induction heating element that generates heat by an induction magnetic field to heat at least the shielding member; a magnetic field generating unit that generates the induction magnetic field; a drive mechanism for moving a part of the magnetic field generating unit toward or away from the induction heating element.

21. A method for processing a substrate in a substrate processing apparatus, comprising: The substrate processing apparatus includes: a processing chamber in which a processing space for the substrate is formed; a shield member disposed apart from an inner wall surface of the processing chamber and defining at least a portion of a side wall of the processing space; a heat insulating layer for insulating the shield member from an inner wall surface of the processing chamber; an induction heating element that generates heat by an induction magnetic field to heat at least the shielding member; a magnetic field generating unit provided outside the processing chamber and generating the induction magnetic field; The method for processing a substrate comprises: a step of generating an induction magnetic field by supplying a current to the magnetic field generating unit, and heating the shield member by the induction magnetic field; adjusting the amount of current supplied to the magnetic field generating unit based on at least one of the ambient temperature of the processing chamber and the amount of reaction products adhering to the shield member.

22. a vacuum insulation space serving as the heat insulating layer is formed between the shield member and an inner wall surface of the processing chamber; The method for processing a substrate comprises:

22. The substrate processing method according to claim 21, further comprising the step of supplying a heat transfer fluid to the vacuum insulation space to cool the shield member.

23. The substrate processing apparatus includes: a gas supply unit that supplies a processing gas to the processing space; a plasma generating unit that generates plasma in the processing space by the processing gas, The method for processing a substrate comprises:

23. The substrate processing method according to claim 21, further comprising the step of generating plasma in the processing space after supplying the processing gas into the processing chamber.

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