Methods and apparatus for cleaning substrate after processing

Abstract

To provide methods and apparatus for removing substrate contamination.SOLUTION: A multi-chamber processing apparatus includes: a processing chamber for processing a substrate 121; a factory interface (FI) coupled to the processing chamber via a load lock chamber disposed therebetween; and a cleaning chamber 200 coupled to the FI and configured to rinse and dry the substrate, the cleaning chamber including a chamber body 210 defining an interior volume 202 and having a first opening 214 at an interface with the FI for transferring the substrate into and out of the interior volume.SELECTED DRAWING: Figure 2

Description

[Technical Field]

[0001] TECHNICAL FIELD

[0001] Embodiments of the present disclosure generally relate to substrate processing equipment. [Background technology]

[0002]

[0002] In the field of semiconductor device manufacturing, substrates may be subjected to deposition or etching processes to selectively add or remove material from the substrate. The addition or removal of material during the etching process may result in unwanted contamination or residue on the surface of the substrate, which may lead to defects in subsequent processing. The inventors have determined that conventional plasma-based cleaning processes are insufficient to remove the unwanted contamination.

[0003] Accordingly, the present inventors have provided an improved method and apparatus for removing contamination from a substrate after processing. Summary of the Invention

[0004]

[0004] Methods and apparatus for removing contamination from a substrate are provided herein. In some embodiments, a multi-chamber processing apparatus includes processing chambers for processing a substrate, a factory interface (FI) coupled to the processing chambers via a load lock chamber disposed therebetween, and a cleaning chamber coupled to the FI and configured to rinse and dry the substrate, the cleaning chamber including a chamber body defining an interior region and having a first opening at an interface surface with the FI for transferring the substrate into and out of the interior region.

[0005]

[0005] In some embodiments, a method for processing a substrate includes processing the substrate in a processing chamber; transferring the substrate from the processing chamber to a cleaning chamber through a factory interface (FI) within a queue time, wherein the pressure of the FI is maintained higher than the pressure of the cleaning chamber to supply air flow from the FI to the cleaning chamber; transferring the substrate from the processing chamber to the cleaning chamber through a factory interface (FI) within a queue time; and fixing the substrate to a substrate support of the cleaning chamber, wherein the cleaning chamber has a first opening on an interface surface with the FI for transferring the substrate in and out of the cleaning chamber and a second opening on an interface surface with the FI for supplying air flow from the FI to the cleaning chamber.

[0006]

[0006] In some embodiments, a method for processing a substrate includes processing the substrate in a processing chamber, and transferring the substrate from the processing chamber to a cleaning chamber within a queue time through a factory interface (FI), wherein the pressure of the FI is maintained higher than the pressure of the cleaning chamber to supply air flow from the FI to the cleaning chamber; transferring the substrate from the processing chamber to the cleaning chamber through a factory interface (FI) within a queue time, and fixing the substrate to a substrate support of the cleaning chamber, wherein the cleaning chamber has a first opening at an interface with the FI for transferring the substrate in and out of the cleaning chamber and a second opening at an interface with the FI for supplying air flow from the FI to the cleaning chamber; to a substrate support of the cleaning chamber; moving at least one of an upper housing and a lower housing of the cleaning chamber to a closed position defining a processing region therebetween, the upper housing including the substrate support; rinsing the substrate by injecting a liquid into the processing region while rotating the substrate at a first revolutions per minute (RPM) for a first period of time; cleaning the substrate by injecting a liquid into the processing region while rotating the substrate at a second RPM for a second period of time; and drying the substrate by rotating the substrate in the processing region at a third RPM for a third period of time.

[0007]

[0007] Other and further embodiments of the present disclosure are described below.

[0008]

[0008] The embodiments of the present disclosure summarized above and described in more detail below can be understood by reference to the exemplary embodiments of the present disclosure illustrated in the accompanying drawings. However, the accompanying drawings merely illustrate typical embodiments of the present disclosure and therefore should not be considered limiting in scope, as the present disclosure may admit of other equally effective embodiments. [Brief explanation of the drawings]

[0009] [Figure 1] FIG. 1 illustrates a multi-chamber processing tool 100 suitable for performing methods for processing substrates according to some embodiments of the present disclosure. [Figure 2] 1 illustrates a wash chamber in a transfer position according to some embodiments of the present disclosure. [Figure 3] FIG. 1 illustrates a wash chamber in a closed position according to some embodiments of the present disclosure. [Figure 4] FIG. 1 illustrates a wash chamber in an open position according to some embodiments of the present disclosure. [Figure 5] 1 illustrates a method of processing a substrate according to some embodiments of the present disclosure. DETAILED DESCRIPTION OF THE INVENTION

[0010]

[0014] To facilitate understanding, the same reference numerals have been used, wherever possible, to designate identical elements common to the figures. The figures are not drawn to scale and may be simplified for clarity. Elements and features of one embodiment may be beneficially incorporated in other embodiments without further description.

[0011]

[0015] Provided herein are methods and apparatus for removing contamination from a substrate after processing the substrate. The inventors have observed that contamination on a substrate, such as sidewall contamination, can be removed via a rinse, clean, and spin-dry process within a queue time after processing. The process may be a deposition process, an etch process, or any other suitable process. In some embodiments, the queue time is about 30 minutes or less. In some embodiments, the cleaning chamber is configured to perform the rinse, clean, and spin-dry processes within a single chamber. In some embodiments, the cleaning chamber is advantageously integrated into a multi-chamber processing tool to clean the substrate within the queue time.

[0012]

[0016] FIG. 1 illustrates a multi-chamber processing tool 100 suitable for performing methods for processing substrates according to some embodiments of the present disclosure. Examples of multi-chamber processing tools 100 include the CENTURA® tool and the ENDURA® tool, all commercially available from Applied Materials, Inc., Santa Clara, California. The methods described herein may be performed using other multi-chamber processing tools having suitable process chambers coupled thereto or in other suitable process chambers. For example, in some embodiments, the methods of the present invention described above may be advantageously performed in a multi-chamber processing tool with limited or no vacuum breaks between processing steps. For example, reduced vacuum breaks may limit or prevent contamination of any substrates being processed in the multi-chamber processing tool. Other process chambers, including those available from other manufacturers, may also be suitable for use in conjunction with the teachings provided herein.

[0013]

[0017] The multi-chamber processing tool 100 includes a vacuum-tight processing platform 101, a factory interface (FI) 104, and a system controller 102. The processing platform 101 includes multiple processing chambers, such as 114A, 114B, 114C, and 114D, that are operably coupled to a transfer chamber 103 that is under vacuum. The factory interface 104 is selectively operably coupled to the transfer chamber 103 by one or more load lock chambers, such as 106A and 106B shown in FIG.

[0014]

[0018] In some embodiments, the factory interface 104 includes at least one docking station 107 and at least one factory interface robot 138 to facilitate substrate transfer. The at least one docking station 107 is configured to receive one or more front-opening unified pods (FOUPs). Four FOUPs, identified as 105A, 105B, 105C, and 105D, are shown in FIG. 1 . The at least one factory interface robot 138 is configured to transfer substrates from the factory interface 104 through the load lock chambers 106A, 106B to the processing platform 101. Each of the load lock chambers 106A, 106B has a first port coupled to the factory interface 104 and a second port coupled to the transfer chamber 103. The load lock chambers 106A and 106B are coupled to a pressure control system (not shown) that pumps down and evacuates the load lock chambers 106A and 106B to facilitate the passage of substrates between the vacuum environment of the transfer chamber 103 and the substantially ambient (e.g., atmospheric) environment of the factory interface 104.

[0015]

[0019] The transfer chamber 103 has a vacuum robot 142 disposed therein. The vacuum robot 142 is capable of transferring substrates 121 between the load lock chambers 106A and 106B and the processing chambers 114A, 114B, 114C, and 114D. In some embodiments, the vacuum robot 142 includes one or more upper arms that are rotatable about respective shoulder axes. In some embodiments, the one or more upper arms are coupled to respective forearm and wrist members such that the vacuum robot 142 can extend into and retract from any processing chambers coupled to the transfer chamber 103.

[0016]

[0020] Processing chambers 114A, 114B, 114C, and 114D are coupled to the transfer chamber 103. Each of processing chambers 114A, 114B, 114C, and 114D may include a chemical vapor deposition (CVD) chamber, an atomic layer deposition (ALD) chamber, a physical vapor deposition (PVD) chamber, a plasma enhanced atomic layer deposition (PEALD) chamber, an etching chamber (i.e., a dry etching chamber), a pre-clean / annealing chamber, etc. In some embodiments, at least one of processing chambers 114A, 114B, 114C, and 114D is an etching chamber. The etching chamber may be any suitable processing chamber configured to perform a dry etching process by removing substrate material using a plasma or etchant gas. For example, the dry etching process may include aluminum oxide (Al2O3) etching, aluminum chloride (AlCl3) etching, etc.

[0017]

[0021] The cleaning chamber 144 is coupled to the factory interface 104 and configured to clean or remove contamination from the substrate 121 after processing in one or more of the processing chambers 114A, 114B, 114C, and 114D. For example, the vacuum robot 142 may transfer the substrate 121 from one of the processing chambers 114A, 114B, 114C, and 114D to one of the load lock chambers 106A and 106B. One of the at least one factory interface robot 138 may transfer the substrate 121 from the load lock chambers 106A and 106B to the cleaning chamber 114. In some embodiments, the cleaning chamber 144 is coupled to the factory interface 104 on a different side of the factory interface 104 than the load lock chambers 106A and 106B and than the FOUPs (e.g., 105A, 105B, 105C, and 105D). Once the substrate 121 is placed in the cleaning chamber 144, the cleaning chamber 144 may perform rinse, clean, and spin dry functions (described in more detail below) to remove contamination from the substrate 121, for example, sidewall contamination from a dry etching process.

[0018]

[0022] The system controller 102 controls the operation of the multi-chamber processing tool 100 using direct control of the cleaning chamber 144 and process chambers 114A, 114B, 114C, and 114D, or alternatively, by controlling computers (or controllers) associated with the cleaning chamber 144 and process chambers 114A, 114B, 114C, and 114D. The system controller 102 generally includes a central processing unit (CPU) 130, memory 134, and support circuits 132. The CPU 130 may be one of any form of general-purpose computer processor available in an industrial environment. The support circuits 132 are conventionally coupled to the CPU 130 and may include cache, clock circuits, input / output subsystems, power supplies, etc. Software routines, such as the processing methods described above, may be stored in the memory 134 and, when executed by the CPU 130, convert the CPU 130 into the system controller 102. The software routines may also be stored and / or executed by a second controller (not shown) located remotely from the multi-chamber processing tool 100.

[0019]

[0023] In operation, the system controller 102 enables data collection and feedback from each chamber and system and provides instructions to system components to optimize performance of the multi-chamber processing tool 100. For example, the memory 134 may be a non-transitory computer-readable storage medium having instructions that, when executed by the CPU 130 (or the system controller 102), perform the methods described herein.

[0020]

[0024] FIG. 2 illustrates a wash chamber 200 in a transfer position according to some embodiments of the present disclosure. The wash chamber 200 may be the wash chamber 144. The wash chamber 200 generally includes a chamber body 210 defining an interior region 202 therein. In some embodiments, the wash chamber 200 includes a divider plate 208 disposed in the interior region to define an upper compartment 280 and a lower compartment 290 of the wash chamber 200. The divider plate 208 includes a plurality of openings 252 for directing airflow 270 from the upper compartment 280 to the lower compartment 290. The chamber body 210 includes a pump port 264 coupled to a pump 266 to control the pressure in the interior region 202 and evacuate gas. In some embodiments, the pump port 264 is disposed in a sidewall of the chamber body 210. In some embodiments, the pump port 264 is in the lower compartment 290. The pump port 264 may include multiple openings (only one opening is shown in FIG. 2) through the chamber body 210.

[0021]

[0025] In some embodiments, there are no other openings through the divider plate 208 except for the plurality of openings 252. In some embodiments, in addition to the plurality of openings 252, the divider plate 208 defines an airflow slot 268 between the divider plate 208 and a sidewall of the chamber body 210 to direct the airflow 270 from the upper compartment 280 to the lower compartment 290. The airflow slot 269 can provide additional airflow between the upper compartment 280 and the lower compartment 290 to control the pressure differential therebetween. In some embodiments, the divider plate 208 includes a tuning plate 262 coupled to the divider plate 208, which defines the airflow slot 268 between the tuning plate 262 and the chamber body 210. In some embodiments, the size of the tuning plate 262 can be adjusted to adjust the width of the airflow slot 268. In some embodiments, the width of the airflow slot 268 is from about 3.0 mm to about 15.0 mm. In some embodiments, the airflow slot 268 is a rectangular slot that extends substantially the entire length of the upper section 280 .

[0022]

[0026] The wash chamber 200 includes an upper housing 204 and a lower housing 206, both disposed within the interior region 202. In some embodiments, the upper housing 204 and the lower housing 206 are disposed in an upper compartment 280. In some embodiments, the lower housing 206 is coupled to a divider plate 208. In some embodiments, a plurality of openings 252 are disposed proximate to the lower housing 206. In some embodiments, the plurality of openings 252 includes four openings disposed about the lower housing 206.

[0023]

[0027] The upper housing 204 generally includes a body 205 and a substrate support 216 for securing the substrate 121 thereto. In some embodiments, the body 205 has a dome-like shape. The substrate support 216 includes a plurality of receiving fingers 220 for securing, clamping, or otherwise removably coupling the substrate 121 to the substrate support 216. In some embodiments, the plurality of receiving fingers 220 include grooves or slots for receiving an edge of the substrate 121. The substrate support 216 is rotatable about a central axis 218 of the upper housing 204 for rinsing, cleaning, or spin-drying the substrate 121. In some embodiments, an upper motor 246 is disposed in the upper housing 204 and coupled to the substrate support 216 via a support shaft 236. In some embodiments, the upper motor 246 rotates the support shaft 236, the substrate support 216, and the substrate 121 secured thereto about the central axis 218 relative to the body 205 during at least one of the rinsing, cleaning, or spin-drying processes.

[0024]

[0028] In some embodiments, the support shaft 236 includes a central channel 244 disposed therethrough. A purge gas supply 248 may be fluidly coupled to the central channel 244 for flowing a purge gas therethrough to the backside of the substrate 121. The purge gas supply 248 may be comprised of an inert gas such as nitrogen gas, helium gas, argon gas, or the like.

[0025]

[0029] The chamber body 210 includes a first opening 214 in its sidewall at an interface with the factory interface 104 to facilitate transfer of the substrate 121 into and out of the interior region 202. For example, an end effector 212 of one of the at least one factory interface robot 138 may transfer the substrate 121 into the interior region 202 and facilitate securing the substrate 121 to the upper housing 204. In some embodiments, in the transfer position shown in FIG. 2 , the substrate 121 is oriented “upward” through the first opening 214 before being secured in an “upward” orientation to the upper housing 204 having the substrate supports 216. In some embodiments, in the transfer position, the substrate 121 may be oriented “downward” through the first opening 214 before being secured in a “downward” orientation to the upper housing 204 having the substrate supports 216. In some embodiments, the first opening 214 can accommodate a substrate 121 having a diameter of 200 mm, 300 mm, 450 mm, etc.

[0026]

[0030] In some embodiments, the chamber body 210 includes a second opening 260 or slot at its interface with the factory interface 104 to increase air circulation in the cleaning chamber 200. The second opening 260 is advantageous because it eliminates trapped moisture in the upper portion of the interior region 202 that could potentially enter the factory interface 104. In some embodiments, the second opening 260 is positioned vertically above the first opening 214. In some embodiments, the second opening 260 is similar in size to the first opening 214. In some embodiments, the first opening 214 and the second opening 260 are fluidly coupled to the upper section 280.

[0027]

[0031] The lower housing 206 includes a body 222 that defines a processing region 232 therein. In some embodiments, the lower housing 206 includes a plurality of nozzles 224 disposed in the processing region 232. The plurality of nozzles 224 are configured to direct liquid toward the upper housing 204 for rinsing or cleaning the substrate 121 when clamped (described in more detail below with respect to FIG. 3).

[0028]

[0032] In some embodiments, a first motor 234 is coupled to the upper housing 204 via a support arm 240. The first motor 234 is configured to selectively rotate the upper housing 204 about an elongated axis 250 of the support arm 240 from a transfer position in which the substrate supports 216 face away from the lower housing 206 (i.e., an "upward" orientation) to a processing position in which the substrate supports 216 face toward the lower housing 206 (i.e., a "downward" orientation) (see FIGS. 4 and 5 ). In some embodiments, a lift mechanism 242 is coupled to the support arm 240 for selectively raising or lowering the upper housing 204 relative to the lower housing 206. The lift mechanism 242 may be a linear actuator, or the like. In some embodiments, the lift mechanism 242 is coupled to the upper housing 204 at one end and to the divider plate 208 at another end.

[0029]

[0033] In some embodiments, the swing arm 272 extends over the substrate support 216 and the substrate 121 secured thereto when the substrate support 216 is oriented “upward.” In some embodiments, the swing arm 272 is coupled to the upper housing 204, as shown in FIG. 2 . In some embodiments, the swing arm 272 is coupled to the divider plate 208. The swing arm 272 includes one or more nozzles 274 for spraying one or more fluids to remove contaminants or moisture from the substrate 121. For example, the one or more nozzles 274 may spray a liquid such as water, isopropanol (IPA), or the like. In another example, the one or more nozzles 274 may spray a gas such as compressed dry air (CDA), nitrogen (N), or the like. In some embodiments, the one or more nozzles 274 include two tubes for spraying any combination of the above-mentioned fluids. The swing arm 272 may rotate or sweep across the substrate 121.

[0030]

[0034] 3 illustrates the cleaning chamber 200 in a closed position according to some embodiments of the present disclosure. In the closed position, the substrate support 216 faces the lower housing 206, and the upper housing 204 is in sealing engagement with the lower housing 206, with the processing volume 232 therebetween. In some embodiments, the upper housing 204 includes an annular groove 304 for receiving a seal member 316 configured to provide a seal between the upper and lower housings 204, 206 when in the closed processing position. In some embodiments, the seal member 316 is a flexible tube that can expand to seal the lower and upper housings 206, 204 together.

[0031]

[0035] The cleaning chamber 200 includes a liquid source 310, e.g., a water source, for supplying liquid to the plurality of nozzles 224. In some embodiments, the plurality of nozzles 224 includes an array of first nozzles 306 that are rotatable within the processing region 232 of the lower housing 206 and configured to direct liquid 308 toward a front surface 352 of a substrate 121 secured to a substrate support 216. In some embodiments, the liquid is water, deionized water, or the like. In some embodiments, the temperature of the liquid directed toward the substrate 121 is between about 20 and 80°C.

[0032]

[0036] In some embodiments, the plurality of nozzles 224 is coupled to a central shaft 312. In some embodiments, the central shaft 312 is hollow to provide a conduit from the liquid source 310 to the plurality of nozzles 224. In some embodiments, the plurality of nozzles 224 is a linear array of nozzles extending radially outward from the central shaft 230. In some embodiments, the central shaft 312 is coupled to a second motor 360 to rotate the plurality of nozzles 224 about the central axis of the central shaft 312 within the processing region 232.

[0033]

[0037] In some embodiments, the lower housing 206 includes one or more side cleaning channels 330 extending from a bottom surface 332 of the lower housing 206 to one or more side cleaning nozzles 318 disposed in a sidewall of the lower housing 206. The one or more side cleaning nozzles 318 are configured to direct liquid radially inward toward the sidewall of the substrate 121. The one or more side cleaning channels 330 may be fluidly coupled to a second liquid source 320 or to the liquid source 310. In some embodiments, the second liquid source 320 provides the same liquid as the liquid source 310.

[0034]

[0038] In some embodiments, the lower housing 206 includes a drain opening 302 extending from the processing region 232 to a bottom surface 332 of the lower housing 206. The drain opening 302 is fluidly coupled to a drain 350 for draining liquid from the processing region 232. In some embodiments, a second pump 338 is fluidly coupled to the processing region 232 for controlling the pressure in the processing region 232 or for evacuating gases from the processing region 232. The pressure in the interior region 202 is advantageously maintained below the pressure in the factory interface 104 to minimize or prevent liquid or humid air from the cleaning chamber 200 from entering the factory interface 104. In some embodiments, the pressure in the lower compartment 290 is advantageously maintained below the pressure in the upper compartment 280 to direct air flow from the upper compartment 280 to the lower compartment 290 to minimize or prevent liquid or humid air from the cleaning chamber 200 from entering the factory interface 104.

[0035]

[0039] 4 illustrates the cleaning chamber 200 in an open position according to some embodiments of the present disclosure. In the open position, the substrate support 216 faces the lower housing 206, with the upper housing 204 slightly spaced from the lower housing 206, creating a gap 410 therebetween. In other words, in the open position, the lower housing 206 is not in sealing engagement with the upper housing 204. In some embodiments, a lift mechanism 242 facilitates selectively maintaining the upper housing 204 in a closed or open position. In some embodiments, the lift mechanism 242 is coupled to the lower housing 206 and selectively maintains the upper and lower housings 204 and 206 in a closed or open position. In some embodiments, a spin-dry process is advantageously performed in the open position so that dry air from the cleaning chamber 200 can replace humid air from the processing region 232 created during the rinsing and cleaning process.

[0036]

[0040] 5 illustrates a method 500 for processing a substrate according to some embodiments of the present disclosure. At 502, a substrate (e.g., substrate 121) is processed in a processing chamber (e.g., one of processing chambers 114A, 114B, 114C, and 114D) of a multi-chamber processing tool (e.g., multi-chamber processing tool 100). In some embodiments, the processing chamber is an etch chamber. In some embodiments, the processing chamber is an etch chamber for performing a dry etch process. In some embodiments, the processing chamber is a deposition chamber, such as a physical vapor deposition (PVD) chamber, a chemical vapor deposition (CVD) chamber, an atomic layer deposition (ALD) chamber, or the like.

[0037]

[0041] In 504, the substrate is transferred from a processing chamber to a cleaning chamber (e.g., cleaning chamber 200) via a factory interface (FI) (e.g., factory interface 104) within a queue time. The pressure of the FI is maintained higher than the pressure of the cleaning chamber to provide airflow from the FI to the cleaning chamber. In some embodiments, the queue time is less than 6 hours. In some embodiments, the queue time is advantageously from about 2 minutes to about 30 minutes. In some embodiments, a load lock chamber (e.g., load lock chambers 106A and 106B) can be used as a cool-down chamber before transferring the substrate to the cleaning chamber. In some embodiments, the substrate is held in the cool-down chamber for about 1 minute to about 5 minutes to cool the substrate before transferring it to the cleaning chamber.

[0038]

[0042] At 506, a substrate is secured to a substrate support (e.g., substrate support 216) of the cleaning chamber. In some embodiments, the upper housing of the cleaning chamber (e.g., upper housing 204) includes the substrate support. In some embodiments, the substrate is secured "face up" on the substrate support. In some embodiments, the substrate is secured "face down" relative to the substrate support. In embodiments in which the substrate is secured "face up," after securing the substrate, the upper housing is rotated approximately 180 degrees about an elongated axis (e.g., elongated axis 250) of a support arm (e.g., support arm 240) so that the substrate faces toward the lower housing of the cleaning chamber.

[0039]

[0043] At 508, the upper and lower housings (e.g., lower housing 206) of the cleaning chamber are moved toward each other to a closed position defining a processing region (e.g., processing region 232) therebetween. In some embodiments, in the closed position, the upper housing is at least partially disposed within the lower housing.

[0040]

[0044] At 510, the substrate is rinsed by injecting a liquid into the processing region while rotating the substrate at a first revolutions per minute (RPM) for a first period of time. In some embodiments, the substrate is rinsed through at least one of the plurality of nozzles 224 or the plurality of side cleaning nozzles 318. In some embodiments, the first RPM is between about 20 RPM and about 800 RPM.

[0041]

[0045] In some embodiments, a seal disposed between the upper and lower housings (i.e., seal member 316) is simultaneously expanded while rinsing the substrate to form a seal between the upper and lower housings. In some embodiments, a seal disposed between the upper and lower housings is expanded before rinsing the substrate to form a seal between the upper and lower housings.

[0042]

[0046] At 512, the substrate is cleaned by injecting a liquid into the processing region while rotating the substrate at a second RPM for a second period of time. In some embodiments, the second period of time is longer than the first period of time. In some embodiments, cleaning the substrate by injecting a liquid includes directing the liquid from the lower housing toward the exposed front surface of the substrate and the sidewalls of the substrate. In some embodiments, the substrate is cleaned through at least one of the plurality of nozzles 224 or the plurality of side cleaning nozzles 318. In some embodiments, the first period of time and the second period of time together are from about 10 seconds to about 300 seconds. In some embodiments, the second RPM is from about 300 RPM to about 1000 RPM. The plurality of nozzles 224 can rotate about a central shaft (e.g., central shaft 312) while the substrate is being cleaned. The flow rate of the injected liquid can be greater while the substrate is being cleaned than while the substrate is being rinsed.

[0043]

[0047] At 514, the substrate is dried in the processing region by rotating the substrate at a third RPM for a third period of time. In some embodiments, the upper and lower housings are positioned in an open position vertically spaced apart from one another prior to drying the substrate. In some embodiments, the third RPM is from about 1000 RPM to about 1800 RPM. In some embodiments, the second RPM is greater than the first RPM, and the third RPM is greater than the first RPM and the second RPM. In some embodiments, the third period of time is from about 30 seconds to about 180 seconds.

[0044]

[0048] While the forgoing is directed to embodiments of the present disclosure, other and further embodiments of the disclosure may be devised without departing from the basic scope thereof.

Claims

1. A multi-chamber processing apparatus, a processing chamber for processing the substrate; a factory interface (FI) coupled to the processing chamber via a load lock chamber disposed therebetween; a cleaning chamber coupled to the FI and configured to rinse and dry the substrate, the cleaning chamber including a chamber body defining an interior region and having a first opening at an interface with the FI for transferring the substrate into and out of the interior region; A multi-chamber processing apparatus comprising:

2. The multi-chamber processing apparatus of claim 1 , wherein the cleaning chamber includes a second opening in a surface that interfaces with the FI to enhance air circulation in the cleaning chamber.

3. 2. The multi-chamber processing apparatus of claim 1, wherein the cleaning chamber includes a partition plate disposed in the interior region to define an upper compartment and a lower compartment of the cleaning chamber, the partition plate including a plurality of openings for directing air flow from the upper compartment to the lower compartment.

4. 4. The multi-chamber processing apparatus of claim 3, wherein the cleaning chamber includes a tuning plate coupled to the divider plate, the tuning plate defining an airflow slot between the tuning plate and a chamber body.

5. The multi-chamber processing apparatus of claim 4 , wherein the processing chamber is an etching chamber.

6. a first front-opening unified pod (FOUP) coupled to the FI and configured to provide one or more substrates into or out of the multi-chamber processing apparatus; a transfer chamber in selective communication with the load lock chamber; a factory interface robot disposed at the FI and configured to transfer substrates from the load lock chamber to the cleaning chamber; The multi-chamber processing apparatus of claim 1 , further comprising:

7. The multi-chamber processing apparatus of claim 6 , wherein the cleaning chamber is located on a different side of the FI than the FOUP and the load lock chamber.

8. The washing chamber comprises: an upper housing disposed in the interior region and having a substrate support for fixing a substrate, the substrate support being rotatable about a central axis of the upper housing; a lower housing disposed in the interior region and having a plurality of nozzles for directing liquid toward the upper housing for cleaning the substrate when clamped, and a drain; The multi-chamber processing apparatus according to claim 1 , comprising:

9. 9. The multi-chamber processing apparatus of claim 8, wherein the cleaning chamber includes a lift mechanism that selectively raises or lowers the upper housing relative to the lower housing between an open processing position and a closed processing position.

10. 10. The multi-chamber processing apparatus of claim 8, further comprising: a first motor coupled to the upper housing, the first motor configured to selectively rotate the upper housing from a transfer position in which the substrate support faces away from the lower housing to a processing position in which the substrate support faces toward the lower housing.

11. The plurality of nozzles a first array of nozzles rotatable within the lower housing and configured to direct liquid towards the substrate support; or more side wash nozzles disposed on the sidewall of the lower housing and configured to direct liquid radially inward; The multi-chamber processing apparatus according to claim 8 , comprising at least one of:

12. 10. The multi-chamber processing apparatus of claim 8, wherein the upper housing includes an annular groove for receiving a seal member configured to provide a seal between the upper and lower housings when in a closed processing position.

13. 1. A method of processing a substrate, comprising: processing the substrate in a processing chamber of a multi-chamber processing tool; transferring the substrate from the processing chamber to a cleaning chamber through a factory interface (FI) within a queue time, wherein a pressure of the FI is maintained higher than a pressure of the cleaning chamber to supply air flow from the FI to the cleaning chamber; Fixing the substrate to a substrate support of the cleaning chamber, the cleaning chamber having a first opening on an interface with the FI for transferring the substrate into and out of the cleaning chamber, and a second opening on an interface with the FI for supplying airflow from the FI to the cleaning chamber; A method comprising:

14. moving at least one of an upper housing and a lower housing of the cleaning chamber to a closed position defining a processing volume therebetween, the upper housing including the substrate support; rinsing the substrate by injecting a liquid into the processing region while rotating the substrate at a first revolutions per minute (RPM) for a first period of time; cleaning the substrate by injecting a liquid into the processing region while rotating the substrate at a second RPM for a second period of time; drying the substrate by rotating the substrate in the processing region at a third RPM for a third period of time; The method of claim 13 further comprising:

15. 15. The method of claim 14, wherein the first period of time and the second period of time together are from about 10 seconds to about 300 seconds.

16. The method of claim 14 , wherein processing the substrate comprises performing an etching process.

17. 15. The method of claim 14, further comprising, after securing the substrate, rotating the upper housing approximately 180 degrees so that the substrate faces the lower housing of the cleaning chamber.

18. The method of claim 14 , wherein the upper housing is positioned in an open position vertically spaced apart from the lower housing prior to drying the substrate.

19. 15. The method of claim 14, wherein a seal member disposed between the upper and lower housings simultaneously expands while rinsing the substrate to form a seal between the upper and lower housings.

20. 20. The method of any one of claims 13 to 19, wherein the queue time is from about 2 minutes to about 30 minutes.

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