Substrate processing apparatus

Abstract

To provide a substrate processing apparatus in which particles are less likely to be generated.SOLUTION: A substrate processing apparatus 100 processes a substrate W by supplying a chemical liquid to the substrate W. The substrate processing apparatus 100 includes a target member. The target member has a hydrophobized surface TS that is a hydrophobized surface. The hydrophobized surface TS is a surface that is exposed to a first mist, which is a mist generated from the chemical liquid, or a fume generated from the chemical liquid, but is not assumed to be in contact with the chemical liquid or droplets of the chemical liquid. In an embodiment, the hydrophobized surface TS includes at least one of an inner wall surface 203a of a process chamber 201, a lower surface 231 of a rectifying plate 23, a front surface 91a of an exhaust damper 91, and a portion of an outer surface 431 of a cover part 43 of a substrate rotating part 4 located below a liquid receiving part 7.SELECTED DRAWING: Figure 2

Description

[Technical Field]

[0001] The present invention relates to a substrate processing apparatus. [Background technology]

[0002] One type of substrate processing apparatus is a single-wafer processing apparatus that processes substrates one by one. Single-wafer processing apparatuses process substrates by supplying a chemical solution to the substrates. For example, a single-wafer processing apparatus includes a chamber, a transfer robot that loads substrates into the chamber, and a discharge nozzle that discharges the chemical solution toward the substrates within the chamber. The chemical solution is supplied to the substrates by being discharged from the discharge nozzle toward the substrates. For example, a single-wafer processing apparatus supplies SPM (Sulfuric Acid Hydrogen Peroxide Mixture) to the substrates as the chemical solution. SPM is a mixture of sulfuric acid (H2SO4) and hydrogen peroxide (H2O2) (sulfuric acid-hydrogen peroxide solution) (see, for example, Patent Document 1). Resist films can be removed from substrates W using SPM.

[0003] In single-wafer processing substrate processing apparatuses, chemical mist may be generated from the chemical solution during substrate processing (see, for example, Patent Document 1). As a result, the atmosphere inside the chamber may become a chemical atmosphere due to the chemical mist. In addition, the chemical mist may be mixed into the exhaust gas exhausted from the chamber. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] Japanese Patent Application Publication No. 2023-140910 Summary of the Invention [Problem to be solved by the invention]

[0005] However, when the mist derived from the chemical solution adheres to the surfaces of components constituting the substrate processing apparatus and dries, it may turn into particles that contaminate the substrates.

[0006] The present invention has been made in view of the above-mentioned problems, and an object of the present invention is to provide a substrate processing apparatus that is less likely to generate particles. [Means for solving the problem]

[0007] According to one aspect of the present invention, a substrate processing apparatus is an apparatus for processing a substrate by supplying a chemical solution to the substrate. The substrate processing apparatus includes a target member. The target member has a hydrophobicized surface. The hydrophobicized surface is a surface that is exposed to a first mist that is a mist generated from the chemical solution or fumes generated from the chemical solution, but is not intended to come into contact with the chemical solution or droplets of the chemical solution.

[0008] In one embodiment, the substrate processing apparatus further includes a processing chamber, a shutter, a blower mechanism, a rectifying plate, a substrate holder, a substrate rotation unit, a discharge nozzle, a liquid receiving unit, a first exhaust duct, a second exhaust duct, an exhaust damper, a drainage pipe, a drain tank, and an exhaust pipe. The processing chamber has an opening. The substrate is loaded into the processing chamber through the opening. The shutter opens and closes the opening. The blower mechanism sends air into the processing chamber from above. The rectifying plate rectifies the air sent into the processing chamber from the blower mechanism. The substrate holder holds the substrate horizontally within the processing chamber. The substrate rotation unit rotates the substrate integrally with the substrate holder. The discharge nozzle discharges the chemical liquid toward the substrate held by the substrate holder. The liquid receiving unit surrounds the substrate held by the substrate holder and receives the chemical liquid discharged from the substrate. The first exhaust duct exhausts a first gas, which is a gas inside the processing chamber, to the outside of the processing chamber. The second exhaust duct is disposed outside the processing chamber. The first gas exhausted from the first exhaust duct flows into the second exhaust duct. The exhaust damper adjusts the flow rate of the first gas flowing from the first exhaust duct to the second exhaust duct. The drain pipe discharges the chemical liquid from inside the processing chamber to the outside. The drain tank stores the chemical liquid discharged from inside the processing chamber to the outside via the drain pipe. The exhaust pipe discharges a second gas, which is a gas inside the drain tank, to the outside of the drain tank. The substrate rotation unit has a drive unit and a cover unit. The drive unit generates a drive force that rotates the substrate integrally with the substrate holder. The cover unit covers the drive unit. The hydrophobic surface includes at least one of the inner wall surface of the processing chamber, the inner surface of the shutter, the lower surface of the straightening plate, the inner surface of the second exhaust duct, the surface of the exhaust damper, the inner surface of the exhaust piping, the portion of the outer surface of the cover portion that is located below the liquid receiving portion, and the inner wall surface of the drain tank.

[0009] In one embodiment, the hydrophobic surface is processed to have an uneven shape that increases the contact angle of fine particles of the chemical liquid that constitute the first mist or the fumes.

[0010] In one embodiment, the chemical solution includes a first chemical solution that is an acidic chemical solution and a second chemical solution that is an alkaline chemical solution, and the first mist includes a mist generated from the first chemical solution and a mist generated from the second chemical solution.

[0011] In one embodiment, the first chemical liquid contains sulfuric acid and hydrogen peroxide or sulfuric acid, and the second chemical liquid contains SC1.

[0012] In one embodiment, the substrate processing apparatus further includes a mist supplying unit that supplies a second mist toward the hydrophobic surface, the second mist being a mist that does not wet the hydrophobic surface.

[0013] In one embodiment, the substrate processing apparatus further includes a water-repellent agent supplying section that supplies a water-repellent agent toward the hydrophobic surface. [Effects of the Invention]

[0014] According to the substrate processing apparatus of the present invention, particles are less likely to be generated. [Brief explanation of the drawings]

[0015] [Figure 1] 1 is a schematic view of a substrate processing apparatus according to a first embodiment of the present invention. [Figure 2] 1 is a cross-sectional view schematically showing the configuration of a substrate processing section included in a substrate processing apparatus according to a first embodiment of the present invention. [Figure 3] 4 is another cross-sectional view schematically showing the configuration of the substrate processing section included in the substrate processing apparatus according to the first embodiment of the present invention. FIG. [Figure 4] 5 is a flowchart showing the operation of the substrate processing apparatus according to the first embodiment of the present invention. [Figure 5] 1 is a flowchart showing a flow of substrate processing. [Figure 6] FIG. 2 is a cross-sectional view showing an example of a hydrophobic surface. [Figure 7] 1 is a view showing a part of a substrate processing apparatus according to a first embodiment of the present invention. [Figure 8] FIG. 4 is another view showing a part of the substrate processing apparatus according to the first embodiment of the present invention. [Figure 9] FIG. 10 is a cross-sectional view schematically showing the configuration of a substrate processing section included in a substrate processing apparatus according to a second embodiment of the present invention. [Figure 10] 10 is another cross-sectional view schematically showing the configuration of a substrate processing section included in a substrate processing apparatus according to Embodiment 2 of the present invention. FIG. DETAILED DESCRIPTION OF THE INVENTION

[0016] Hereinafter, an embodiment of the substrate processing apparatus of the present invention will be described with reference to the drawings (FIGS. 1 to 10). However, the present invention is not limited to the following embodiment, and can be implemented in various aspects without departing from the spirit of the present invention. Note that where explanations are redundant, they may be omitted as appropriate. Furthermore, in the drawings, the same or equivalent parts are designated by the same reference numerals, and explanations thereof will not be repeated.

[0017] In the substrate processing apparatus according to the present invention, the "substrate" to be processed can be a semiconductor wafer, a glass substrate for a photomask, a glass substrate for a liquid crystal display, a glass substrate for a plasma display, a substrate for an FED (Field Emission Display), a substrate for an optical disk, a substrate for a magnetic disk, or a substrate for a magneto-optical disk. The following description of an embodiment of the present invention will be primarily focused on a case where a disk-shaped semiconductor wafer is the substrate to be processed. However, the substrate processing apparatus according to the present invention can be similarly applied to various substrates other than the semiconductor wafers described above. Furthermore, the shape of the substrate is not limited to a disk shape, and the substrate processing apparatus according to the present invention can be applied to substrates of various shapes.

[0018] [Embodiment 1] First, a substrate processing apparatus 100 according to the present embodiment will be described with reference to Fig. 1. Fig. 1 is a schematic diagram of the substrate processing apparatus 100 according to the present embodiment. More specifically, Fig. 1 is a schematic plan view of the substrate processing apparatus 100 according to the present embodiment. The substrate processing apparatus 100 processes the substrates W by supplying a processing liquid to the substrates W. More specifically, the substrate processing apparatus 100 is a single-wafer processing apparatus that processes the substrates W one by one.

[0019] As shown in FIG. 1, the substrate processing apparatus 100 includes a plurality of substrate processing units 2, a fluid cabinet 100A, a plurality of fluid boxes 100B, a plurality of load ports LP, an indexer robot IR, a center robot CR, and a control device 10.

[0020] A cassette CA is placed on each load port LP. The cassette CA accommodates one or more stacked substrates W. The cassette CA may be, for example, a FOUP (Front Opening Unified Pod), a SMIF (Standard Mechanical Interface) pod, or an OC (Open Cassette).

[0021] The indexer robot IR transports substrates W between the cassette CA and the center robot CR. The center robot CR transports substrates W between the indexer robot IR and the substrate processing unit 2. Note that a placement stage (path) on which the substrate W is temporarily placed may be provided between the indexer robot IR and the center robot CR, and the device may be configured so that the substrate W is transferred indirectly between the indexer robot IR and the center robot CR via the placement stage.

[0022] The substrate processing units 2 form a plurality of towers TW (four towers TW in FIG. 1). The towers TW are arranged to surround the center robot CR in a plan view. Each tower TW includes a plurality of substrate processing units 2 (three substrate processing units 2 in this embodiment) stacked one above the other.

[0023] The fluid cabinet 100A contains a fluid. The fluid includes a processing liquid. Each fluid box 100B corresponds to one of the multiple towers TW. The processing liquid in the fluid cabinet 100A is supplied to all substrate processing units 2 included in the tower TW corresponding to the fluid box 100B via one of the fluid boxes 100B.

[0024] The processing liquid in the fluid cabinet 100A includes a chemical liquid and a rinse liquid. In this embodiment, the processing liquid in the fluid cabinet 100A includes sulfuric acid (H2SO4), hydrogen peroxide (H2O2), ammonia water (NH4OH), and a rinse liquid. The rinse liquid is, for example, pure water. The pure water may be deionized water (DIW). More specifically, the rinse liquid may be ultrapure water. Note that the rinse liquid is not limited to pure water. The rinse liquid may be, for example, carbonated water, electrolytic ionized water, hydrogen water, ozone water, ammonia water, or hydrochloric acid water with a diluted concentration (for example, approximately 0.001 wt % to 0.01 wt %). However, if the rinse liquid is not pure water, the fluid in the fluid cabinet 100A further includes pure water.

[0025] Each of the substrate processing units 2 processes the substrate W by supplying a processing liquid to the upper surface of the substrate W. Specifically, the substrate processing unit 2 processes the substrate W by supplying a chemical liquid and a rinse liquid to the upper surface of the substrate W. The chemical liquids supplied to the substrate W may include a first chemical liquid which is an acidic chemical liquid and a second chemical liquid which is an alkaline chemical liquid. In this embodiment, the substrate processing unit 2 supplies SPM (Sulfuric Acid Hydrogen Peroxide Mixture) to the substrate W as the acidic chemical liquid (first chemical liquid) and supplies SC1 to the substrate W as the alkaline chemical liquid (second chemical liquid). SPM is a mixture of sulfuric acid and hydrogen peroxide solution (sulfuric acid-hydrogen peroxide solution). SC1 is a mixture of ammonia water, hydrogen peroxide solution, and pure water.

[0026] When SPM is supplied to the upper surface of the substrate W, the resist film (organic matter) is peeled off from the upper surface of the substrate W, and the resist film is removed from the upper surface of the substrate W. When SC1 is supplied to the upper surface of the substrate W, particles adhering to the upper surface of the substrate W are removed. More specifically, the hydrogen peroxide solution contained in SC1 oxidizes silicon on the main surface of the substrate W, and the silicon oxide is etched by ammonia, and various particles are removed by lift-off. Therefore, the SC1 peels off and removes the resist film residue and insoluble particles.

[0027] The control device 10 controls the operation of each part of the substrate processing apparatus 100. For example, the control device 10 controls the load port LP, the indexer robot IR, the center robot CR, and the substrate processing unit 2. The control device 10 includes a control unit 11 and a memory unit 12.

[0028] The control unit 11 controls the operation of each unit of the substrate processing apparatus 100 based on various information stored in the storage unit 12. The control unit 11 has, for example, a processor. The processor may be a CPU (Central Processing Unit) or an MPU (Micro Processing Unit). Alternatively, the control unit 11 may have a general-purpose computing device or a dedicated computing device.

[0029] The storage unit 12 stores various information for controlling the operation of the substrate processing apparatus 100. For example, the storage unit 12 stores data and computer programs. The data includes various recipe data. The recipe data includes, for example, a process recipe. The process recipe is data that defines the procedure for substrate processing. Specifically, the process recipe defines the execution order of a series of processes included in the substrate processing, the content of each process, and the conditions (parameter setting values) for each process.

[0030] The storage unit 12 includes a main storage device. The main storage device includes, for example, a semiconductor memory. The storage unit 12 may further include an auxiliary storage device. The auxiliary storage device includes, for example, at least one of a semiconductor memory and a hard disk drive. The storage unit 12 may also include removable media.

[0031] Next, the substrate processing apparatus 100 of this embodiment will be described with reference to Figures 1 to 3. Figure 2 is a cross-sectional view schematically showing the configuration of the substrate processing unit 2 included in the substrate processing apparatus 100 of this embodiment. Figure 3 is another cross-sectional view schematically showing the configuration of the substrate processing unit 2 included in the substrate processing apparatus 100 of this embodiment. In particular, Figure 3 shows the inside of the substrate processing unit 2 as viewed from above.

[0032] 2, the substrate processing unit 2 includes a processing chamber 201, an air blower mechanism 22, a current plate 23, a substrate holder 3, a substrate rotation unit 4, a plurality of discharge nozzles 5, a first nozzle movement unit 61, a second nozzle movement unit 62, a liquid receiving unit 7, a first elevating unit 75a, a second elevating unit 75b, a first exhaust duct 9, and an exhaust damper 91. The substrate processing apparatus 100 further includes a first liquid supply unit 51a, a second liquid supply unit 51b, a third liquid supply unit 51c, a recovery pipe 8a, a first drainage pipe 8b, and a second exhaust duct 101.

[0033] The processing chamber 201 has a generally box-like shape. More specifically, the processing chamber 201 has an upper wall 202, a side wall 203, and a bottom wall 204. The processing chamber 201 accommodates a substrate W, a current plate 23, a substrate holder 3, a substrate rotation unit 4, a plurality of discharge nozzles 5, a first nozzle movement unit 61, a second nozzle movement unit 62, a liquid receiving unit 7, a first lifting / lowering unit 75a, a second lifting / lowering unit 75b, a first exhaust duct 9, a portion of an exhaust damper 91, a portion of a first liquid supply unit 51a, a portion of a second liquid supply unit 51b, a portion of a third liquid supply unit 51c, a portion of a recovery pipe 8a, and a portion of a first drainage pipe 8b. The substrate W is loaded into the processing chamber 201 and processed therein. That is, substrate processing is performed in the processing chamber 201. The processing chamber 201 is, for example, a chamber.

[0034] The blower mechanism 22 is disposed outside the processing chamber 201. Specifically, the blower mechanism 22 is disposed above the processing chamber 201 (upper wall 202) and faces the outer wall surface of the upper wall 202. The blower mechanism 22 may be installed on the outer wall surface of the upper wall 202. More specifically, the processing chamber 201 has a blower opening 201a that penetrates the upper wall 202 in the vertical direction, and the blower mechanism 22 is disposed above the blower opening 201a. The blower opening 201a is formed, for example, at a position that overlaps with the substrate W in a plan view.

[0035] The blower mechanism 22 sends (blows) air from above the processing chamber 201 into the processing chamber 201. Specifically, the blower mechanism 22 draws in air from a clean room in which the substrate processing apparatus 100 is installed and blows the air into the processing chamber 201 through the air outlet 201a. More specifically, the blower mechanism 22 has blades, an electric motor, and a filter. The blades rotate to draw in air from the clean room and blow the air toward the air outlet 201a. The electric motor rotates the blades. The filter filters the air blown by the rotating blades. As a result, air purified by the filter is blown into the processing chamber 201. The blower mechanism 22 is, for example, a fan filter unit (FFU).

[0036] The rectifying plate 23 is disposed in the processing chamber 201. More specifically, the rectifying plate 23 is held in a horizontal position. Therefore, the rectifying plate 23 extends along a horizontal plane. For example, the rectifying plate 23 is supported on a side wall 203 of the processing chamber 201. The rectifying plate 23 divides the internal space of the processing chamber 201 into an upper space SP1 and a lower space SP2. The upper space SP1 is a space above the lower space SP2.

[0037] More specifically, the rectifying vane 23 is disposed in an upper portion of the processing chamber 201 and faces the inner wall surface of the top wall 202. Specifically, the rectifying vane 23 is disposed above the components used for substrate processing in the processing chamber 201. Therefore, the substrate processing is performed in the lower space SP2. In other words, the lower space SP2 is a processing space. The components used for substrate processing include the substrate holder 3, the substrate rotation unit 4, the multiple discharge nozzles 5, the first nozzle movement unit 61, the second nozzle movement unit 62, and the liquid receiving unit 7.

[0038] The rectifying plate 23 rectifies the air sent (blowed) into the processing chamber 201 from the blower mechanism 22, generating a downflow in the lower space SP2 (processing space). Specifically, the rectifying plate 23 has a large number of through holes 23a. Each of the through holes 23a penetrates the rectifying plate 23 in the thickness direction of the rectifying plate 23. The large number of through holes 23a is formed over the entire area of ​​the rectifying plate 23. The air blown from the blower mechanism 22 passes through the large number of through holes 23a and flows into the lower space SP2 from the entire area of ​​the rectifying plate 23. As a result, a downward air current (downflow) flowing downward from the entire area of ​​the rectifying plate 23 is generated in the lower space SP2.

[0039] The electric motor of the blower mechanism 22 is controlled by the control device 10 (controller 11). The control device 10 (controller 11) may control the electric motor of the blower mechanism 22 to constantly generate a downflow in the lower space SP2 (processing space).

[0040] The substrate holding unit 3 holds the substrate W horizontally in the processing chamber 201. Specifically, the substrate holding unit 3 holds the substrate W in a lower space SP2 of the processing chamber 201. As shown in FIG. 2, the substrate holding unit 3 may include a spin base 31 and a plurality of chuck members 32.

[0041] The spin base 31 is substantially disk-shaped and supports a plurality of chuck members 32 in a horizontal position. The plurality of chuck members 32 are arranged on the periphery of the spin base 31. The plurality of chuck members 32 clamp the periphery of the substrate W. The plurality of chuck members 32 hold the substrate W in a horizontal position. The operation of the plurality of chuck members 32 is controlled by the control device 10 (control unit 11).

[0042] The substrate rotation unit 4 rotates the substrate W integrally with the substrate holding unit 3. Specifically, the substrate rotation unit 4 rotates the substrate holding unit 3, which holds the substrate W, around a first rotation axis AX1 that extends vertically. The substrate rotation unit 4 is controlled by the control device 10 (control unit 11).

[0043] Specifically, the first axis of rotation AX1 passes through the center of the spin base 31. The multiple chuck members 32 are arranged so that the center of the substrate W faces the center of the spin base 31. Therefore, the substrate W rotates around the center of the substrate W.

[0044] As shown in FIG. 2, the substrate rotation unit 4 may have a drive unit 41, a shaft 42, and a cover unit 43. The shaft 42 is coupled to the center of the spin base 31 and extends downward from the spin base 31. The drive unit 41 generates a drive force that rotates the substrate W integrally with the substrate holder 3. More specifically, the drive unit 41 rotates the shaft 42 about a first rotation axis AX1. As a result, the spin base 31 rotates. The drive unit 41 is controlled by the control device 10 (control unit 11). The drive unit 41 includes, for example, an electric motor.

[0045] The cover part 43 covers the drive part 41 and the shaft 42. More specifically, the cover part 43 is disposed below the substrate holding part 3. Specifically, the cover part 43 is disposed below the spin base 31 and extends downward from the spin base 31. The cover part 43 is substantially cylindrical and surrounds the drive part 41 and the shaft 42. In other words, the cover part 43 is disposed around the drive part 41 and the shaft 42.

[0046] The multiple discharge nozzles 5 are arranged in the lower space SP2. Each of the multiple discharge nozzles 5 discharges a processing liquid toward the upper surface of the substrate W held by the substrate holder 3. As a result, the processing liquid is supplied from the multiple discharge nozzles 5 to the upper surface of the substrate W. In this embodiment, the multiple discharge nozzles 5 discharge SPM, hydrogen peroxide, SC1, and rinse liquid toward the substrate W in the following order: SPM, hydrogen peroxide, rinse liquid, SC1, rinse liquid.

[0047] More specifically, the plurality of discharge nozzles 5 include a first discharge nozzle 5a, a second discharge nozzle 5b, and a third discharge nozzle 5c.

[0048] The first discharge nozzle 5a discharges an acidic chemical liquid (first chemical liquid). More specifically, the first discharge nozzle 5a discharges SPM toward the upper surface of the rotating substrate W. SPM is an example of a "first chemical liquid." In this embodiment, the first discharge nozzle 5a exclusively discharges SPM and hydrogen peroxide solution. In other words, the first discharge nozzle 5a selectively discharges either SPM or hydrogen peroxide solution.

[0049] More specifically, the first discharge nozzle 5a discharges hydrogen peroxide solution following the SPM. As the SPM is discharged onto the upper surface of the rotating substrate W, a liquid film of SPM is formed on the upper surface of the substrate W. Thereafter, as the hydrogen peroxide solution is discharged onto the upper surface of the rotating substrate W, the SPM is expelled from the upper surface of the substrate W, and a liquid film of hydrogen peroxide solution is formed on the upper surface of the substrate W. In other words, the liquid film of SPM on the substrate W is replaced with a liquid film of hydrogen peroxide solution.

[0050] The discharge of SPM from the first discharge nozzle 5a and the discharge of hydrogen peroxide solution from the first discharge nozzle 5a are controlled by the control device 10 (controller 11). More specifically, the control device 10 (controller 11) controls the discharge of SPM and the discharge of hydrogen peroxide solution by controlling the first liquid supply unit 51a.

[0051] The first liquid supply unit 51a supplies a first chemical liquid (an acidic chemical liquid) to the first discharge nozzle 5a. As a result, the first chemical liquid is discharged from the first discharge nozzle 5a. In this embodiment, the first liquid supply unit 51a exclusively supplies SPM and hydrogen peroxide solution to the first discharge nozzle 5a. In other words, the first liquid supply unit 51a selectively supplies one of SPM and hydrogen peroxide solution to the first discharge nozzle 5a. As a result, SPM and hydrogen peroxide solution are exclusively discharged from the first discharge nozzle 5a. In more detail, the first liquid supply unit 51a supplies SPM followed by hydrogen peroxide solution to the first discharge nozzle 5a. As a result, hydrogen peroxide solution is discharged from the first discharge nozzle 5a followed by SPM.

[0052] 2, the first liquid supply unit 51a may include a first liquid supply pipe 511a, a first component supply pipe 512a, a second component supply pipe 513a, a first component on-off valve 52a, and a second component on-off valve 53a. A portion of the first liquid supply pipe 511a is housed within the processing chamber 201. The remaining portion of the first liquid supply pipe 511a, the first component supply pipe 512a, the second component supply pipe 513a, the first component on-off valve 52a, and the second component on-off valve 53a are housed in the fluid box 100B described with reference to FIG.

[0053] The first liquid supply pipe 511a, the first component supply pipe 512a, and the second component supply pipe 513a are tubular members that allow the processing liquid to flow. Specifically, the first component supply pipe 512a allows sulfuric acid to flow up to the first liquid supply pipe 511a. As a result, sulfuric acid is supplied to the first liquid supply pipe 511a. The second component supply pipe 513a allows hydrogen peroxide solution to flow up to the first liquid supply pipe 511a. As a result, hydrogen peroxide solution is supplied to the first liquid supply pipe 511a. By supplying sulfuric acid and hydrogen peroxide solution to the first liquid supply pipe 511a, SPM, which is a mixture of sulfuric acid and hydrogen peroxide solution, is generated in the first liquid supply pipe 511a. The first liquid supply pipe 511a allows SPM to flow up to the first discharge nozzle 5a. As a result, SPM is supplied to the first discharge nozzle 5a and discharged from the first discharge nozzle 5a.

[0054] The first component on-off valve 52a is provided on the first component supply pipe 512a. The first component on-off valve 52a controls the start and stop of the flow of sulfuric acid (treatment liquid) through the first component supply pipe 512a. Similarly, the second component on-off valve 53a is provided on the second component supply pipe 513a. The second component on-off valve 53a controls the start and stop of the flow of hydrogen peroxide solution (treatment liquid) through the second component supply pipe 513a.

[0055] Specifically, the first component on-off valve 52a and the second component on-off valve 53a can be opened and closed. When the first component on-off valve 52a is opened, sulfuric acid flows through the first component supply pipe 512a, and sulfuric acid is supplied to the first liquid supply pipe 511a. Similarly, when the second component on-off valve 53a is opened, hydrogen peroxide flows through the second component supply pipe 513a, and hydrogen peroxide is supplied to the first liquid supply pipe 511a. When the first component on-off valve 52a is closed, the flow of sulfuric acid through the first component supply pipe 512a is stopped, and the supply of sulfuric acid to the first liquid supply pipe 511a is stopped. Similarly, when the second component on-off valve 53a is closed, the flow of hydrogen peroxide through the second component supply pipe 513a is stopped, and the supply of hydrogen peroxide to the first liquid supply pipe 511a is stopped.

[0056] The opening and closing operations of first component on-off valve 52a and second component on-off valve 53a are controlled by control device 10 (controller 11). The actuators of first component on-off valve 52a and second component on-off valve 53a are, for example, pneumatic actuators or electric actuators.

[0057] When discharging SPM from the first discharge nozzle 5a, the control device 10 (controller 11) opens the first component on-off valve 52a and the second component on-off valve 53a. When discharging hydrogen peroxide solution from the first discharge nozzle 5a following SPM, the control device 10 (controller 11) closes the first component on-off valve 52a to stop the supply of sulfuric acid to the first liquid supply pipe 511a. As a result, the supply of sulfuric acid to the first liquid supply pipe 511a is stopped, and only hydrogen peroxide solution is supplied to the first liquid supply pipe 511a, and hydrogen peroxide solution is discharged from the first discharge nozzle 5a. When stopping the discharge of hydrogen peroxide solution from the first discharge nozzle 5a, the control device 10 (controller 11) closes the second component on-off valve 53a. As a result, the discharge of the treatment liquid (SPM and hydrogen peroxide solution) from the first discharge nozzle 5a is stopped.

[0058] The second discharge nozzle 5b discharges an alkaline chemical liquid (second chemical liquid). More specifically, the second discharge nozzle 5b discharges SC1 toward the rotating substrate W. SC1 is an example of a "second chemical liquid." When SC1 is discharged onto the upper surface of the rotating substrate W, a liquid film of SC1 is formed on the upper surface of the substrate W.

[0059] The discharge of SC1 from the second discharge nozzle 5b is controlled by the control device 10 (controller 11). Specifically, the control device 10 (controller 11) controls the discharge of SC1 by controlling the second liquid supply unit 51b.

[0060] The second liquid supply unit 51b supplies a second chemical liquid (alkaline chemical liquid) to the second discharge nozzle 5b. As a result, the second chemical liquid is discharged from the second discharge nozzle 5b. In this embodiment, the second liquid supply unit 51b supplies SC1 to the second discharge nozzle 5b. As a result, SC1 is discharged from the second discharge nozzle 5b.

[0061] 2, the second liquid supply unit 51b may include a second liquid supply pipe 511b and a chemical liquid on-off valve 52b. A portion of the second liquid supply pipe 511b is housed within the processing chamber 201. The remaining portion of the second liquid supply pipe 511b and the chemical liquid on-off valve 52b are housed in the fluid box 100B described with reference to FIG. 1. The configuration of the chemical liquid on-off valve 52b is substantially the same as the first component on-off valve 52a and the second component on-off valve 53a, and therefore a detailed description thereof will be omitted.

[0062] The second liquid supply pipe 511b is a tubular member through which the processing liquid flows. Specifically, the second liquid supply pipe 511b flows SC1 to the second discharge nozzle 5b. As a result, SC1 is supplied to the second discharge nozzle 5b and is discharged from the second discharge nozzle 5b.

[0063] The chemical liquid on-off valve 52b is provided in the second liquid supply pipe 511b. The chemical liquid on-off valve 52b controls the start and stop of flow of SC1 (processing liquid) through the second liquid supply pipe 511b. The opening and closing operation of the chemical liquid on-off valve 52b is controlled by the control device 10 (controller 11). The control device 10 (controller 11) opens the chemical liquid on-off valve 52b when discharging SC1 from the second discharge nozzle 5b. The control device 10 (controller 11) closes the chemical liquid on-off valve 52b when stopping the discharge of SC1 from the second discharge nozzle 5b.

[0064] The third discharge nozzle 5c discharges the rinse liquid. More specifically, the third discharge nozzle 5c discharges the rinse liquid toward the rotating substrate W. As the rinse liquid is discharged onto the upper surface of the rotating substrate W, a liquid film of the rinse liquid is formed on the upper surface of the substrate W.

[0065] The discharge of the rinse liquid from the third discharge nozzle 5c is controlled by the control device 10 (controller 11). Specifically, the control device 10 (controller 11) controls the discharge of the rinse liquid by controlling the third liquid supply unit 51c.

[0066] The third liquid supply unit 51c supplies the rinse liquid to the third discharge nozzle 5c. As a result, the rinse liquid is discharged from the third discharge nozzle 5c. As shown in FIG. 2, the third liquid supply unit 51c may include a third liquid supply pipe 511c and a rinse liquid on-off valve 52c. A portion of the third liquid supply pipe 511c is housed in the processing chamber 201. The remaining portion of the third liquid supply pipe 511c and the rinse liquid on-off valve 52c are housed in the fluid box 100B described with reference to FIG. 1. The rinse liquid on-off valve 52c is openable and closable. The opening and closing operation of the rinse liquid on-off valve 52c is controlled by the control device 10 (controller 11). The configuration of the third liquid supply unit 51c is substantially the same as that of the second liquid supply unit 51b, and therefore a detailed description thereof will be omitted.

[0067] As shown in FIG. 3, the first nozzle moving unit 61 moves the first discharge nozzle 5a between a processing position TP and a first standby position WP1. The first nozzle moving unit 61 is controlled by the control unit 11. The processing position TP is a position facing the substrate W held by the substrate holding unit 3. In this embodiment, the processing position TP is a position facing the center of the substrate W. In other words, the processing position TP is a position on the first rotation axis AX1. The first standby position WP1 is a position outside the liquid receiving unit 7 in a plan view.

[0068] More specifically, the first nozzle moving unit 61 moves the first discharge nozzle 5a in the vertical and horizontal directions. Specifically, the first nozzle moving unit 61 has a first arm 611, a first nozzle base 612, and a first nozzle moving mechanism 613 (FIG. 2).

[0069] 2, the first nozzle base 612 extends in the vertical direction. The first arm 611 is connected to the first nozzle base 612. The first arm 611 extends in the horizontal direction from the first nozzle base 612. The first arm 611 supports the first discharge nozzle 5a. For example, the first discharge nozzle 5a is fixed to the tip of the first arm 611.

[0070] The first nozzle moving mechanism 613 moves the first arm 611 in the vertical and horizontal directions. As a result, the first discharge nozzle 5a moves in the vertical and horizontal directions. The first nozzle moving mechanism 613 is controlled by the control device 10 (controller 11).

[0071] Specifically, the first nozzle movement mechanism 613 has a rotation mechanism and an elevation mechanism. The rotation mechanism rotates the first nozzle base 612 in both forward and reverse directions around a second rotation axis AX2 extending vertically. As a result, the first discharge nozzle 5a moves along a horizontal plane. The elevation mechanism raises and lowers the first nozzle base 612 in the vertical direction. As a result, the first discharge nozzle 5a moves vertically. The actuator of the rotation mechanism may have, for example, a servo motor such as a stepping motor and a reducer. The actuator of the elevation mechanism may have, for example, a ball screw and an electric motor that can rotate forward and backward.

[0072] 3, the second nozzle moving unit 62 moves the second discharge nozzle 5b between the processing position TP and a second standby position WP2. The second nozzle moving unit 62 is controlled by the control unit 11. The second standby position WP2 is a position different from the first standby position WP1. Like the first standby position WP1, the second standby position WP2 is a position outside the liquid receiving unit 7 in a plan view.

[0073] More specifically, the second nozzle moving unit 62 moves the second discharge nozzle 5b in the vertical and horizontal directions. As shown in FIGS. 2 and 3, the second nozzle moving unit 62, like the first nozzle moving unit 61, has a second arm 621, a second nozzle base 622, and a second nozzle moving mechanism 623 (FIG. 2). Like the first nozzle moving mechanism 613, the second nozzle moving mechanism 623 has a rotation mechanism and an elevation mechanism. The rotation mechanism of the second nozzle moving mechanism 623 rotates the second nozzle base 622 in both forward and reverse directions around a third rotation axis AX3 extending vertically. The second nozzle moving mechanism 623 is controlled by the control device 10 (control unit 11). The configuration of the second nozzle moving unit 62 is substantially the same as that of the first nozzle moving unit 61, and therefore a detailed description thereof will be omitted.

[0074] Next, the liquid receiving unit 7, the first lifting / lowering unit 75a, the second lifting / lowering unit 75b, the recovery pipe 8a, and the first drainage pipe 8b will be described with reference to Fig. 2. The liquid receiving unit 7 surrounds the substrate W held by the substrate holder 3 and receives the processing liquid discharged from the substrate W. In this embodiment, the liquid receiving unit 7 receives the SPM, hydrogen peroxide solution, SC1, and rinse liquid discharged from the substrate W. As shown in Fig. 2, the liquid receiving unit 7 may have a first guard 7a, a second guard 7b, and a first cup portion 7c.

[0075] The first lifting unit 75a raises and lowers the first guard 7a between a first upper position and a first lower position. When the first guard 7a is located at the first upper position, the upper end of the first guard 7a is located above the substrate W held by the substrate holding unit 3. When the first guard 7a is located at the first lower position, the upper end of the first guard 7a is located below the substrate W held by the substrate holding unit 3.

[0076] Similarly, the second lifting unit 75b raises and lowers the second guard 7b between a second upper position and a second lower position. When the second guard 7b is located at the second upper position, the upper end of the second guard 7b is located above the substrate W held by the substrate holding unit 3. When the second guard 7b is located at the second lower position, the upper end of the second guard 7b is located below the substrate W held by the substrate holding unit 3.

[0077] The first lifting / lowering unit 75a and the second lifting / lowering unit 75b are controlled by the control device 10 (control unit 11). The first lifting / lowering unit 75a and the second lifting / lowering unit 75b may have, for example, a ball screw and an electric motor that can rotate forward and backward.

[0078] When located at the first upper position, the first guard 7a surrounds the substrate W held by the substrate holder 3 and receives the processing liquid discharged from the substrate W. Specifically, the first guard 7a has a guard portion 71a and a second cup portion 72a.

[0079] The guard part 71a has a substantially cylindrical shape. When the guard part 71a is located at the first upper position, the guard part 71a surrounds the substrate W held by the substrate holder 3 and receives the processing liquid discharged from the substrate W. In this embodiment, the guard part 71a receives the SPM, hydrogen peroxide solution, SC1, and rinse liquid discharged from the substrate W.

[0080] The first cup portion 7c is an annular member disposed around the cover portion 43 of the substrate rotation portion 4. The first cup portion 7c has an annular groove with an open upper surface. The annular lower end of the guard portion 71a is positioned inside the annular groove of the first cup portion 7c. As a result, the processing liquid received by the guard portion 71a is collected in the groove of the first cup portion 7c.

[0081] The second guard 7b is a substantially cylindrical member disposed around (outside) the guard portion 71a. When the second guard 7b is located at the second upper position and the first guard 7a is located at the first lower position, the second guard 7b surrounds the substrate W held by the substrate holder 3 and receives the processing liquid discharged from the substrate W. In this embodiment, the second guard 7b receives the SPM discharged from the substrate W.

[0082] The second cup portion 72a is annular and is disposed around (outside of) the guard portion 71a. The second cup portion 72a has an annular groove with an open top. The lower end of the annular shape of the second guard 7b is located inside the annular groove of the second cup portion 72a. As a result, the processing liquid received by the second guard 7b is collected in the second cup portion 72a.

[0083] The recovery pipe 8a is a tubular member through which the processing liquid flows. The recovery pipe 8a is connected to the bottom of the second cup portion 72a and extends from the inside to the outside of the processing chamber 201. The first chemical liquid (acidic chemical liquid) collected in the second cup portion 72a flows into the recovery pipe 8a. The recovery pipe 8a guides the first chemical liquid collected in the second cup portion 72a to the outside of the processing chamber 201. The first chemical liquid that flows into the recovery pipe 8a is guided to the fluid cabinet 100A described with reference to FIG. 1. As a result, the first chemical liquid collected in the second cup portion 72a is recovered in the fluid cabinet 100A. In this embodiment, the recovery pipe 8a guides the SPM collected in the second cup portion 72a to the fluid cabinet 100A.

[0084] The first drainage pipe 8b discharges the processing liquid from the inside of the processing chamber 201 to the outside. Specifically, the first drainage pipe 8b is a tubular member through which the processing liquid flows. The first drainage pipe 8b is connected to the bottom of the first cup portion 7c and extends from the inside of the processing chamber 201 to the outside. The processing liquid collected in the first cup portion 7c flows into the first drainage pipe 8b. The first drainage pipe 8b guides the processing liquid collected in the first cup portion 7c to the outside of the processing chamber 201. Specifically, the second chemical liquid (alkaline chemical liquid) and the rinse liquid flow into the first drainage pipe 8b from the first cup portion 7c. In this embodiment, SPM, hydrogen peroxide solution, SC1, and the rinse liquid flow into the first drainage pipe 8b from the first cup portion 7c. The destination of the processing liquid that flows into the first drainage pipe 8b will be described later with reference to FIG. 7.

[0085] Next, the first exhaust duct 9, the second exhaust duct 101, and the exhaust damper 91 will be described with reference to Figure 2. The first exhaust duct 9 exhausts a first gas, which is a gas inside the processing chamber 201, to the outside of the processing chamber 201. The second exhaust duct 101 is disposed outside the processing chamber 201. More specifically, the second exhaust duct 101 is housed in the fluid box 100B described with reference to Figure 1. The second exhaust duct 101 communicates with the first exhaust duct 9. The first gas exhausted from the first exhaust duct 9 flows into the second exhaust duct 101.

[0086] Specifically, the gas in the second exhaust duct 101 is constantly sucked in by an exhaust system (not shown) installed in a factory where the substrate processing apparatus 100 is installed. Therefore, the first gas in the first exhaust duct 9 is sucked into the second exhaust duct 101 by the suction force of the exhaust system transmitted through the second exhaust duct 101. As a result, the first gas in the processing chamber 201 is discharged to the second exhaust duct 101 via the first exhaust duct 9.

[0087] The exhaust damper 91 adjusts the flow rate of the first gas flowing from the first exhaust duct 9 to the second exhaust duct 101. Specifically, the exhaust damper 91 is disposed across the first exhaust duct 9 and the second exhaust duct 101. The exhaust damper 91 is a plate-shaped member and is supported on a rotation shaft. The substrate processing unit 2 further includes a drive unit (not shown) that rotates the rotation shaft of the exhaust damper 91 in both forward and reverse directions. The control device 10 (control unit 11) controls the drive unit of the exhaust damper 91 to adjust the inclination angle of the exhaust damper 91. As a result, the flow rate of the first gas flowing from the first exhaust duct 9 to the second exhaust duct 101 is adjusted. The drive unit of the exhaust damper 91 may include, for example, a stepping motor.

[0088] Next, the substrate processing apparatus 100 of this embodiment will be described with reference to FIG. 3. As shown in FIG. 3, the substrate processing unit 2 further includes a shutter 205. The processing chamber 201 further includes a loading / unloading port 201b. The loading / unloading port 201b is an opening that connects the inside and outside of the processing chamber 201. The loading / unloading port 201b is formed in a sidewall 203 of the processing chamber 201. The shutter 205 opens and closes the loading / unloading port 201b. Specifically, the shutter 205 is movable between a position where the loading / unloading port 201b is open and a position where the loading / unloading port 201b is closed. The substrate processing unit 2 further includes a cylinder (not shown) that moves the shutter 205. The control device 10 (controller 11) controls the cylinder to move the shutter 205.

[0089] The substrate W is loaded into the processing chamber 201 through the loading / unloading port 201b. The substrate W is unloaded from the processing chamber 201 through the loading / unloading port 201b. Specifically, when the shutter 205 opens the loading / unloading port 201b, the substrate W is loaded into the lower space SP2 of the processing chamber 201 through the loading / unloading port 201b. When the shutter 205 opens the loading / unloading port 201b, the center robot CR (see FIG. 1) unloads the substrate W from inside to outside the processing chamber 201 through the loading / unloading port 201b. For example, the control unit 11 closes the shutter 205 after the substrate W is transferred from the center robot CR to the substrate holder 3 and the hand of the center robot CR is retracted to outside the processing chamber 201.

[0090] Next, the substrate processing apparatus 100 of this embodiment will be described with reference to Figures 1 to 4. Figure 4 is a flowchart showing the operation of the substrate processing apparatus 100 of this embodiment. In detail, Figure 4 shows the flow of processing executed by the control unit 11. The start timing of the processing shown in Figure 4 is scheduled in advance.

[0091] 4, the control unit 11 first controls the center robot CR to load the substrate W into the lower space SP2 of the processing chamber 201 (step S1). Then, the control unit 11 controls the substrate holding unit 3 to hold the substrate W loaded by the center robot CR on the substrate holding unit 3 (step S2).

[0092] After causing the substrate holding unit 3 to hold the substrate W, the control unit 11 controls the substrate rotation unit 4 to rotate the substrate W integrally with the substrate holding unit 3 (step S3). When the rotation speed of the substrate W reaches a predetermined first rotation speed, the control unit 11 controls the substrate processing unit 2 to perform substrate processing (step S4). Specifically, the control unit 11 controls the substrate processing unit 2 to supply SPM, hydrogen peroxide solution, rinse liquid, and SC1 to the substrate W in the following order: SPM, hydrogen peroxide solution, rinse liquid, SC1, rinse liquid.

[0093] After the substrate processing is completed, the control unit 11 performs a drying process to dry the substrate W (step S5). Specifically, the control unit 11 controls the substrate rotation unit 4 to increase the rotation speed of the substrate W to a predetermined second rotation speed. As a result, the processing liquid is removed from the substrate W, and the substrate W is dried.

[0094] When a predetermined time has elapsed since the rotation speed of the substrate W was increased to the second rotation speed, the control unit 11 stops the rotation of the substrate W. After stopping the rotation of the substrate W, the control unit 11 controls the substrate holder 3 to release its hold on the substrate W. After the substrate holder 3 releases its hold on the substrate W, the control unit 11 controls the center robot CR to unload the substrate W from the processing chamber 201 (step S6). As a result, the process shown in FIG. 4 ends.

[0095] Next, the substrate processing apparatus 100 of this embodiment will be described with reference to Figures 1 to 5. Figure 5 is a flowchart showing the flow of the substrate processing (step S4 in Figure 4). In detail, Figure 5 shows the flow of the processing executed by the control unit 11.

[0096] When the control unit 11 starts substrate processing, it controls the second lifting unit 75b to move the second guard 7b from the second lower position to the second upper position. Furthermore, the control unit 11 controls the first nozzle moving unit 61 to move the first discharge nozzle 5a from the first standby position WP1 to the processing position TP. Then, the control unit 11 controls the first liquid supply unit 51a to discharge SPM (first chemical liquid) from the first discharge nozzle 5a toward the rotating substrate W (step S41). As a result, a liquid film of SPM is formed on the upper surface of the substrate W. Furthermore, the SPM discharged from the rotating substrate W is collected in the second cup unit 72a. The SPM collected in the second cup unit 72a flows into the recovery pipe 8a.

[0097] When a predetermined time has elapsed since the start of the discharge of SPM, the control unit 11 executes a puddle process to maintain a liquid film of SPM on the substrate W (step S42). Specifically, the control unit 11 controls the substrate rotation unit 4 to reduce the rotation speed of the substrate W to a predetermined third rotation speed at which the liquid film is maintained on the substrate W. Alternatively, the control unit 11 controls the substrate rotation unit 4 to stop the rotation of the substrate W.

[0098] The control unit 11 executes the guard switching process during the paddle process (step S43). Specifically, the control unit 11 controls the first lifting unit 75a to move the first guard 7a from the first lower position to the first upper position.

[0099] When a predetermined time has elapsed since the start of the puddle process, the control unit 11 controls the substrate rotator 4 to return the rotation speed of the substrate W from the third rotation speed to the first rotation speed. Alternatively, the control unit 11 controls the substrate rotator 4 to start rotating the substrate W.

[0100] When the rotation speed of the substrate W reaches the first rotation speed, the control unit 11 controls the first liquid supply unit 51a to discharge hydrogen peroxide solution from the first discharge nozzle 5a toward the rotating substrate W (step S44). As a result, SPM is discharged from the substrate W, and a liquid film of hydrogen peroxide solution is formed on the upper surface of the substrate W. The SPM discharged from the substrate W is collected in the first cup unit 7c. The SPM collected in the first cup unit 7c flows into the first drainage pipe 8b. Furthermore, the hydrogen peroxide solution discharged from the rotating substrate W is collected in the first cup unit 7c. The hydrogen peroxide solution collected in the first cup unit 7c flows into the first drainage pipe 8b.

[0101] When a predetermined time has elapsed since the start of the discharge of hydrogen peroxide solution, the control unit 11 executes a first rinse process (step S45). Specifically, the control unit 11 controls the first liquid supply unit 51a to stop the discharge of hydrogen peroxide solution, and controls the third liquid supply unit 51c to discharge the rinse liquid from the third discharge nozzle 5c toward the rotating substrate W. As a result, the hydrogen peroxide solution is discharged from the upper surface of the substrate W, and a liquid film of the rinse liquid is formed on the upper surface of the substrate W. In other words, the liquid film of hydrogen peroxide solution on the substrate W is replaced with a liquid film of the rinse liquid.

[0102] The hydrogen peroxide solution discharged from the substrate W is collected in the first cup portion 7c. The hydrogen peroxide solution collected in the first cup portion 7c flows into the first drainage pipe 8b. Furthermore, the rinse liquid discharged from the rotating substrate W is collected in the first cup portion 7c. The rinse liquid collected in the first cup portion 7c flows into the first drainage pipe 8b. After stopping the discharge of the hydrogen peroxide solution, the control unit 11 controls the first nozzle movement unit 61 to move the first discharge nozzle 5a from the processing position TP to the first standby position WP1.

[0103] When a predetermined time has elapsed since the start of the first rinse process, the control unit 11 controls the second nozzle moving unit 62 to move the second discharge nozzle 5b from the second standby position WP2 to the processing position TP. Then, the control unit 11 controls the third liquid supply unit 51c to stop the discharge of the rinse liquid from the third discharge nozzle 5c, and controls the second liquid supply unit 51b to discharge SC1 (second chemical liquid) from the second discharge nozzle 5b (step S46). As a result, the rinse liquid is discharged from the upper surface of the substrate W, and a liquid film of SC1 is formed on the upper surface of the substrate W. In other words, the liquid film of the rinse liquid on the substrate W is replaced with a liquid film of SC1.

[0104] The rinse liquid discharged from the substrate W is collected in the first cup portion 7c. The rinse liquid collected in the first cup portion 7c flows into the first drainage pipe 8b. Furthermore, SC1 discharged from the rotating substrate W is collected in the first cup portion 7c. The SC1 collected in the first cup portion 7c flows into the first drainage pipe 8b.

[0105] When a predetermined time has elapsed since the start of the discharge of SC1, the control unit 11 executes a second rinse process (step S47). Specifically, the control unit 11 controls the second liquid supply unit 51b to stop the discharge of SC1, and controls the third liquid supply unit 51c to discharge the rinse liquid from the third discharge nozzle 5c toward the rotating substrate W. As a result, SC1 is discharged from the upper surface of the substrate W, and a liquid film of the rinse liquid is formed on the upper surface of the substrate W. In other words, the liquid film of SC1 on the substrate W is replaced with a liquid film of the rinse liquid.

[0106] The SC1 discharged from the substrate W is collected in the first cup portion 7c. The SC1 collected in the first cup portion 7c flows into the first drainage pipe 8b. Furthermore, the rinse liquid discharged from the rotating substrate W is collected in the first cup portion 7c. The rinse liquid collected in the first cup portion 7c flows into the first drainage pipe 8b. After stopping the discharge of SC1, the control unit 11 controls the second nozzle moving unit 62 to move the second discharge nozzle 5b from the processing position TP to the second standby position WP2.

[0107] When a predetermined time has elapsed since the start of the second rinse process, the control unit 11 controls the third liquid supply unit 51c to stop the discharge of the rinse liquid. Then, the control unit 11 executes the drying process (step S5) shown in FIG. 4. As a result, the rinse liquid is discharged from the substrate W and the substrate W is dried. The rinse liquid discharged from the substrate W is collected in the first cup unit 7c. The rinse liquid collected in the first cup unit 7c flows into the first drainage pipe 8b.

[0108] 1 to 6, the substrate processing apparatus 100 of this embodiment will be further described. As already described, the substrate processing unit 2 processes the substrate W by supplying a chemical liquid to the substrate W. As a result, a mist derived from the chemical liquid is generated from the chemical liquid in the processing chamber 201, and the mist derived from the chemical liquid may adhere to various components in the processing chamber 201. Furthermore, the mist derived from the chemical liquid may be discharged into the second exhaust duct 101 together with the first gas discharged from the processing chamber 201, and may adhere to the inner surface 101a (FIG. 7) of the second exhaust duct 101. The mist derived from the chemical liquid is an example of the "first mist."

[0109] In this embodiment, mist (acidic mist) derived from the acidic chemical (first chemical) and mist (alkaline mist) derived from the alkaline chemical (second chemical) are generated in the processing chamber 201. Specifically, mist (acidic mist) derived from SPM, mist (acidic mist) derived from hydrogen peroxide solution, and mist (alkaline mist) derived from SC1 are generated.

[0110] Furthermore, fumes derived from the chemical solution may be generated in the processing chamber 201, and may adhere to various components in the processing chamber 201. Furthermore, fumes derived from the chemical solution may be discharged into the second exhaust duct 101 together with the first gas discharged from the processing chamber 201, and may adhere to the inner surface 101a (FIG. 7) of the second exhaust duct 101. For example, fumes are generated from SPM when the substrate W is being treated with SPM. Fumes are particularly likely to be generated when the substrate W is treated with SPM at a high temperature (e.g., 150°C or higher). Furthermore, fumes are likely to be generated when the liquid film on the substrate W is replaced from the SPM liquid film with a hydrogen peroxide liquid film.

[0111] When the mist derived from the chemical solution dries on a surface to which the mist derived from the chemical solution has adhered, crystals precipitate. Similarly, when the fumes derived from the chemical solution dries on a surface to which the fumes derived from the chemical solution have adhered, crystals precipitate. As a result, for example, the substrate W may be contaminated by the precipitated crystals. Specifically, the number of particles on the substrate W may increase. For example, crystals may precipitate when the material of the component to which the mist or fumes derived from the chemical solution adheres is polyvinyl chloride (PVC). Crystals may also precipitate on a surface to which acidic mist or a combination of acidic fumes and alkaline mist has adhered.

[0112] The substrate processing apparatus 100 of this embodiment includes a target member having a hydrophobized surface TS. Here, the hydrophobized surface TS refers to a surface that is exposed to mist or fumes generated from a chemical solution, but is not expected to come into contact with the chemical solution or droplets of the chemical solution. Hereinafter, the surface to be hydrophobized may be referred to as the "target surface."

[0113] According to this embodiment, by hydrophobizing the surface exposed to the mist or fumes derived from the chemical solution, the mist or fumes derived from the chemical solution are less likely to adhere to the surface exposed to the mist or fumes derived from the chemical solution. Therefore, crystals are less likely to precipitate on the surface exposed to the mist or fumes derived from the chemical solution. As a result, particles are less likely to increase. Furthermore, because particles are less likely to increase, defects are less likely to occur in devices manufactured using the substrate W, and yield can be improved.

[0114] Note that surfaces that come into contact with the chemical solution or droplets of the chemical solution also come into contact with the rinse solution or droplets of the rinse solution. Therefore, even if mist or fumes derived from the chemical solution adhere to the surface, the adhered mist or fumes are washed away by the rinse solution or droplets of the rinse solution. Therefore, in this embodiment, surfaces that are exposed to mist or fumes derived from the chemical solution but are not expected to come into contact with the chemical solution or droplets of the chemical solution are hydrophobized.

[0115] The means for hydrophobizing the target surface is not particularly limited. Here, the means for hydrophobizing the target surface will be described. In the following description, the fine particles LD of the chemical solution that constitute the mist derived from the chemical solution or the fume derived from the chemical solution may be referred to as "fine particles LD of the chemical solution."

[0116] For example, the target surface may be hydrophobized by selecting a material for the target component that will cause a larger contact angle θ of the chemical liquid particles LD (droplets) than a surface that is not hydrophobized. Alternatively, the target surface may be hydrophobized by selecting a material for the portion of the target component that will cause a larger contact angle θ of the chemical liquid particles LD (droplets) than a surface that is not hydrophobized. Note that the contact angle θ refers to the angle formed inside the chemical liquid particles LD (droplets) among the angles between the interface between the chemical liquid particles LD (droplets) and the hydrophobized surface TS and the gas-liquid interface of the chemical liquid particles LD (droplets).

[0117] Materials that increase the contact angle θ include, for example, materials that increase the contact angle θ compared to PVC. Materials that increase the contact angle θ compared to PVC include, for example, fluororesin. The fluororesin may include, for example, one of perfluoroalkoxyalkane (PFA), polytetrafluoroethylene (PTFE), polychlorotrifluoroethylene (PCTFE), and ethylene chlorotrifluoroethylene copolymer (ECTFE), or a mixture containing two or more of these.

[0118] Alternatively, the target surface may be rendered hydrophobic by coating or modifying it with a water repellent agent, by microfabrication of the target surface, or by a combination of two or more of material selection, water repellent agent, and microfabrication.

[0119] The water repellent is not particularly limited. For example, the water repellent may be a silicon-based water repellent. More specifically, the water repellent may be a silane coupling agent. For example, the water repellent may include one of HMDS (hexamethyldisilazane), TMS (tetramethylsilane), fluorinated alkylchlorosilane, alkyldisilazane, and non-chloro-based water repellents, or a mixture containing two or more of these.

[0120] When microfabrication of the target surface is performed, the shape of the target surface may be processed into a finely uneven shape. Specifically, the shape of the target surface may be processed into a finely uneven shape that increases the contact angle θ of the fine particles LD (droplets) of the chemical solution.

[0121] FIG. 6 is a cross-sectional view showing an example of a hydrophobic surface TS. The hydrophobic surface TS shown in FIG. 6 is processed to have a finely uneven shape. Specifically, the hydrophobic surface TS shown in FIG. 6 has an uneven portion 120. The uneven portion 120 includes a plurality of recesses 121 and a plurality of protrusions 122. In other words, the uneven portion 120 is made up of the plurality of recesses 121 and the plurality of protrusions 122. Hereinafter, the fine particles LD of the drug solution may be referred to as "droplets LD."

[0122] As shown in FIG. 6, the recess 121 has a width W1 that is smaller than the diameter Dm of the droplet LD. The recess 121 also has a depth De that prevents the droplet LD from contacting the bottom 121a of the recess 121 while the droplet LD is in contact with the multiple protrusions 122. The protrusions 122 have a width W2 that is smaller than the diameter Dm of the droplet LD and smaller than the width W1 of the recess 121. As a result, the droplet LD does not completely enter the recess 121 and contacts the multiple protrusions 122, reducing the area of ​​contact between the droplet LD and the hydrophobic surface TS. Therefore, the contact angle θ of the droplet LD with the hydrophobic surface TS is larger than the contact angle θ of the droplet LD with a surface on which the uneven portions 120 are not formed. Therefore, the hydrophobicity of the hydrophobic surface TS is improved compared to a surface on which the uneven portions 120 are not formed. The contact angle θ indicates the angle formed inside the droplet LD, among the angles between the interface between the concave-convex portion 120 and the droplet LD and the gas-liquid interface of the droplet LD.

[0123] 2, in this embodiment, the target components having the hydrophobic surface TS include the sidewall 203 of the processing chamber 201, the rectifying vane 23, the exhaust damper 91, and the cover portion 43 of the substrate rotation unit 4. The hydrophobic surface TS also includes the inner wall surface 203a of the processing chamber 201 (sidewall 203), the lower surface 231 of the rectifying vane 23, the surface 91a of the exhaust damper 91, and the outer surface 431 of the lower part 43a of the cover portion 43. The lower part 43a of the cover portion 43 refers to a portion of the cover portion 43 that is located below the liquid receiving portion 7. Hereinafter, the outer surface 431 of the lower part 43a of the cover portion 43 may be referred to as the "outer surface 431 of the cover lower part 43a."

[0124] According to this embodiment, the inner wall surface 203a of the processing chamber 201 (side wall 203), the lower surface 231 of the rectifying plate 23, the surface 91a of the exhaust damper 91, and the outer surface 431 of the cover lower part 43a are made hydrophobic. As a result, particles are less likely to increase.

[0125] Furthermore, if crystals are deposited on the surface 91a of the exhaust damper 91, the exhaust damper 91 will become difficult to rotate. Alternatively, the exhaust damper 91 will become unable to rotate. In contrast, according to this embodiment, crystals are unlikely to deposit on the surface 91a of the exhaust damper 91, so problems such as the exhaust damper 91 becoming difficult to rotate or becoming unable to rotate are unlikely to occur.

[0126] Furthermore, some substrate processing apparatuses are provided with a cleaning nozzle for cleaning the inner wall surface 203a of the processing chamber 201 (sidewall 203) and a cleaning nozzle for cleaning the surface 91a of the exhaust damper 91, and these cleaning nozzles eject pure water toward each target surface to clean the target surface. In this type of apparatus, the inner wall surface 203a of the processing chamber 201 (sidewall 203) and the surface 91a of the exhaust damper 91 are cleaned with pure water to remove chemical-derived mist and chemical-derived fumes from these surfaces. In contrast, according to this embodiment, precipitation of crystals can be suppressed without using a cleaning nozzle. Therefore, the configuration of the apparatus can be prevented from becoming complicated. Furthermore, since there is no need to clean the target surface with pure water, the amount of pure water used can be reduced, thereby reducing the environmental impact.

[0127] Furthermore, if the lower surface 231 of the rectifying plate 23 is washed with pure water, water droplets may fall from the rectifying plate 23 onto the substrate W during substrate processing, potentially contaminating the substrate W. In contrast, according to this embodiment, there is no need to wash the lower surface 231 of the rectifying plate 23 with pure water to remove crystals, and therefore the substrate W is less likely to be contaminated.

[0128] Furthermore, if the lower surface 231 of the rectifying vane 23 is washed with pure water, water droplets may adhere to the through-holes 23a of the rectifying vane 23, causing clogging of the through-holes 23a. As a result, unnecessary alarms may be generated. Specifically, the substrate processing apparatus 100 of this embodiment further includes a pressure sensor (not shown) that detects fluctuations in pressure in the upper space SP1. When the pressure detected by the pressure sensor exceeds a threshold value, the control device 10 (controller 11) controls an alarm (not shown) to generate an alarm. Therefore, if the through-holes 23a are clogged with droplets and the pressure in the upper space SP1 increases, an alarm may be generated. In contrast, according to this embodiment, there is no need to wash the lower surface 231 of the rectifying vane 23 with pure water to remove crystals, and therefore unnecessary alarms can be suppressed.

[0129] Furthermore, if the outer surface 431 of the cover lower part 43a is washed with pure water, the pure water may get inside the cover part 43 and wet the electrical components (e.g., electric motor) arranged inside the cover part 43. In contrast, according to this embodiment, there is no need to wash the outer surface 431 of the cover lower part 43a with pure water to remove crystallized matter, and therefore there is no risk of the electrical components arranged inside the cover part 43 getting wet.

[0130] The first to third discharge nozzles 5a to 5c, the first arm 611, and the second arm 621 are not considered target components because they are exposed to the mist and fumes derived from the chemical liquid, but are also contacted by the processing liquid and droplets of the processing liquid during substrate processing.Furthermore, the inner wall surfaces of the first guard 7a, the second guard 7b, and the first cup portion 7c are also not considered target components because they are exposed to the mist and fumes derived from the chemical liquid, but are also contacted by the processing liquid and droplets of the processing liquid during substrate processing.

[0131] Next, the substrate processing apparatus 100 of this embodiment will be further described with reference to FIG. 3. As shown in FIG. 3, in this embodiment, the shutter 205 is included in the target member having the hydrophobic surface TS. The hydrophobic surface TS also includes the inner surface 205a of the shutter 205. The inner surface 205a of the shutter 205 refers to the surface of the shutter 205 that faces the inside of the processing chamber 201. According to this embodiment, the inner surface 205a of the shutter 205 is hydrophobicized. Therefore, particles are less likely to increase.

[0132] Furthermore, since the shutter 205 vibrates when opening and closing the loading / unloading port 201b, the crystals deposited on the inner surface 205a of the shutter 205 are likely to peel off. Therefore, when the substrate W passes through the loading / unloading port 201b, the substrate W may be contaminated by the crystals that have peeled off from the inner surface 205a of the shutter 205. In other words, the number of particles on the substrate W may increase. In contrast, according to this embodiment, crystals are less likely to deposit on the inner surface 205a of the shutter 205, and therefore the number of particles is less likely to increase.

[0133] Furthermore, some substrate processing apparatuses are provided with a cleaning nozzle for cleaning the inner surface 205a of the shutter 205, and discharge pure water from the cleaning nozzle toward the inner surface 205a of the shutter 205 to clean the inner surface 205a of the shutter 205. In contrast, according to this embodiment, precipitation of crystals can be suppressed without using a cleaning nozzle. Therefore, the configuration of the apparatus can be prevented from becoming complicated. Furthermore, since it is not necessary to clean the inner surface 205a of the shutter 205 with pure water, the amount of pure water used can be reduced, thereby reducing the environmental impact.

[0134] Next, the substrate processing apparatus 100 of this embodiment will be described with reference to Fig. 7. Fig. 7 is a diagram showing a part of the substrate processing apparatus 100 of this embodiment. In detail, Fig. 7 shows a tower TW and a second exhaust duct 101. In this embodiment, the tower TW is formed by three stacked substrate processing units 2.

[0135] 7, the first exhaust ducts 9 of the substrate processing units 2 constituting one tower TW are connected to one second exhaust duct 101. Therefore, the first gas in each processing chamber 201 (see FIG. 2) of the substrate processing units 2 flows into one second exhaust duct 101.

[0136] 7, in this embodiment, the target component having the hydrophobic surface TS includes the second exhaust duct 101. The hydrophobic surface TS also includes the inner surface 101a of the second exhaust duct 101. Therefore, according to this embodiment, crystals are less likely to precipitate on the inner surface 101a of the second exhaust duct 101.

[0137] Furthermore, some users of the substrate processing apparatus 100 may periodically stop the substrate processing apparatus 100 and manually clean off crystals deposited on the inner surface 101a of the second exhaust duct 101. In contrast, according to the present embodiment, crystals are unlikely to deposit on the inner surface 101a of the second exhaust duct 101, so there is no need to stop the substrate processing apparatus 100 and manually clean it. Alternatively, the frequency of such cleaning can be reduced.

[0138] Next, the substrate processing apparatus 100 of this embodiment will be described with reference to Fig. 8. Fig. 8 is another view showing a part of the substrate processing apparatus 100 of this embodiment. As shown in Fig. 8, the substrate processing apparatus 100 further includes a first branch pipe 8c, a second branch pipe 8d, a drain tank 102, an exhaust pipe 103, a second drainage pipe 104, a first on-off valve 81, a second on-off valve 82, a third on-off valve 83, and a fourth on-off valve 105.

[0139] In this embodiment, the target components having the hydrophobic surface TS include the drain tank 102 and the exhaust pipe 103. The hydrophobic surface TS also includes the inner wall surface 102a of the drain tank 102 and the inner surface 103a of the exhaust pipe 103. As a result, it becomes difficult for the acidic mist and alkaline mist to flow back from the drain tank 102 toward the processing chamber 201, causing the acidic mist and alkaline mist to flow into the processing chamber 201. The phenomenon of the acidic mist and alkaline mist flowing back will be specifically described below.

[0140] A portion of the first drainage pipe 8b, the first branch pipe 8c, a portion of the second branch pipe 8d, the drain tank 102, a portion of the exhaust pipe 103, a portion of the second drainage pipe 104, the first on-off valve 81, the second on-off valve 82, the third on-off valve 83, and the fourth on-off valve 105 are housed in the fluid box 100B described with reference to Figure 1.

[0141] One end of the first branch pipe 8c is connected to the first drainage pipe 8b, and the other end of the first branch pipe 8c is connected to the drain tank 102. The first branch pipe 8c is a tubular member through which the treatment liquid flows, and connects the first drainage pipe 8b and the drain tank 102. One end of the second branch pipe 8d is connected to the first branch pipe 8c. The second branch pipe 8d is a tubular member through which the treatment liquid flows, and connects to the first branch pipe 8c.

[0142] A plurality of first branch pipes 8c are connected to the drain tank 102. Each of the plurality of first branch pipes 8c is connected to a respective processing chamber 201 of a plurality of substrate processing units 2 that form one tower TW (see FIG. 1). In this embodiment, one tower TW is formed by three substrate processing units 2, and therefore three first branch pipes 8c are connected to one drain tank 102.

[0143] One end of the exhaust pipe 103 is connected to the upper wall of the drain tank 102. The exhaust pipe 103 is a tubular member through which gas flows, and is in communication with the drain tank 102. The second gas, which is the gas inside the drain tank 102, is exhausted to the outside of the drain tank 102 via the exhaust pipe 103. The second gas contains a chemical atmosphere. Specifically, the chemical discharged from the substrate processing unit 2 (processing chamber 201) is stored in the drain tank 102. As a result, the atmosphere inside the drain tank 102 becomes a chemical atmosphere.

[0144] The first on-off valve 81 is provided in the first drainage pipe 8b. Specifically, the first on-off valve 81 is provided downstream of the connection point between the first drainage pipe 8b and the first branch pipe 8c. The first on-off valve 81 controls the start and stop of the flow of the treatment liquid through the first drainage pipe 8b.

[0145] The second on-off valve 82 is provided in the second branch pipe 8d and controls the start and stop of the flow of the processing liquid through the second branch pipe 8d.

[0146] The third on-off valve 83 is provided in the first branch pipe 8c. Specifically, the third on-off valve 83 is provided downstream of the point where the first branch pipe 8c and the second branch pipe 8d are connected. The third on-off valve 83 controls the start and stop of the flow of the treatment liquid through the first branch pipe 8c.

[0147] The opening and closing operations of the first on-off valve 81 to the third on-off valve 83 are controlled by the control unit 11. The configurations of the first on-off valve 81 to the third on-off valve 83 are substantially the same as the first component on-off valve 52a and the second component on-off valve 53a described with reference to Fig. 2, and therefore detailed description thereof will be omitted.

[0148] When replacing the liquid film of SPM on the substrate W with a liquid film of hydrogen peroxide solution to form a liquid film of hydrogen peroxide solution on the upper surface of the substrate W (step S44 in FIG. 5), the control unit 11 opens the first on-off valve 81 and closes the second on-off valve 82 and the third on-off valve 83. As a result, the SPM and hydrogen peroxide solution collected in the first cup portion 7c flow through the first drainage pipe 8b. The SPM and hydrogen peroxide solution flowing through the first drainage pipe 8b are discharged from the substrate processing apparatus 100. For example, the other end of the first drainage pipe 8b may be connected to a pipe connected to a waste liquid facility of a factory in which the substrate processing apparatus 100 is installed. However, because sulfuric acid, which is one component of SPM, is a highly viscous liquid, some of the sulfuric acid may remain in the first cup portion 7c or the first drainage pipe 8b.

[0149] When starting the first rinse process (step S45 in FIG. 5), control unit 11 transitions first on-off valve 81 to a closed state and third on-off valve 83 to an open state. As a result, first on-off valve 81 and second on-off valve 82 are closed, and third on-off valve 83 is open, so that the hydrogen peroxide solution and rinse liquid collected in first cup portion 7c flow from first drainage pipe 8b into first branch pipe 8c and then into drain tank 102 via first branch pipe 8c. Therefore, the hydrogen peroxide solution and rinse liquid collected in first cup portion 7c during the first rinse process are stored in drain tank 102.

[0150] During the first rinse process, sulfuric acid remaining in the first cup portion 7c or the first drainage pipe 8b flows into the drain tank 102 together with the hydrogen peroxide solution or the rinse liquid. Therefore, sulfuric acid (first chemical liquid) is stored in the drain tank 102. As a result, an acidic mist may be generated in the drain tank 102.

[0151] When the control unit 11 replaces the liquid film of the rinse liquid on the substrate W with a liquid film of SC1 to form a liquid film of SC1 on the upper surface of the substrate W (step S46 in FIG. 5), the control unit 11 transitions the second on-off valve 82 to an open state and the third on-off valve 83 to a closed state. As a result, the first on-off valve 81 and the third on-off valve 83 are closed, and the second on-off valve 82 is opened, so that the rinse liquid and SC1 collected in the first cup portion 7c flow from the first drainage pipe 8b through the first branch pipe 8c into the second branch pipe 8d. The rinse liquid and SC1 flowing through the second branch pipe 8d are discharged from the substrate processing apparatus 100. For example, the other end of the second branch pipe 8d may be connected to a pipe connected to a waste liquid facility of a factory in which the substrate processing apparatus 100 is installed.

[0152] When starting the second rinse process (step S47 in FIG. 5), the control unit 11 transitions the second on-off valve 82 to a closed state and the third on-off valve 83 to an open state. As a result, similar to the first rinse process, the first on-off valve 81 and the second on-off valve 82 are closed, and the third on-off valve 83 is open, causing SC1 and the rinse liquid collected in the first cup portion 7c to flow into the drain tank 102. Therefore, SC1 (second chemical liquid) and the rinse liquid collected in the first cup portion 7c during the second rinse process are stored in the drain tank 102. As a result, alkaline mist may be generated in the drain tank 102.

[0153] The processing liquid stored in the drain tank 102 is drained through a second drainage pipe 104. Specifically, the second drainage pipe 104 is a tubular member through which the processing liquid flows, and is connected to the bottom wall of the drain tank 102 to communicate with the drain tank 102. The fourth on-off valve 105 is provided in the second drainage pipe 104 and controls the start and stop of the flow of the processing liquid through the second drainage pipe 104. The opening and closing operation of the fourth on-off valve 105 is controlled by the control unit 11. The configuration of the fourth on-off valve 105 is substantially the same as the first component on-off valve 52a and the second component on-off valve 53a described with reference to FIG. 2, and therefore a detailed description thereof will be omitted.

[0154] The substrate processing apparatus 100 further includes a water level sensor (not shown) that detects the position (water level) of the water surface LQa in the drain tank 102. When the water level detected by the water level sensor reaches a predetermined full water level, the control unit 11 transitions the fourth on-off valve 105 from a closed state to an open state. As a result, the processing liquid is discharged from the drain tank 102. For example, the control unit 11 transitions the fourth on-off valve 105 from an open state to a closed state after a predetermined time has elapsed since the fourth on-off valve 105 was transitioned from a closed state to an open state.

[0155] As described above, the drain tank 102 stores sulfuric acid (first chemical liquid) and SC1 (second chemical liquid) that are discharged from the inside of the processing chamber 201 to the outside via the first drainage pipe 8b. Therefore, acidic mist and alkaline mist are generated in the drain tank 102, and crystals may precipitate on the inner wall surface 102a of the drain tank 102. The precipitated crystals may then clog the opening of the drain tank 102 that connects the inner space of the drain tank 102 to the exhaust pipe 103. Alternatively, the acidic mist and alkaline mist may flow into the exhaust pipe 103, causing crystals to precipitate on the inner surface 103a of the exhaust pipe 103, resulting in the exhaust pipe 103 being clogged with the crystals. As a result, the acidic mist and alkaline mist in the drain tank 102, together with the chemical atmosphere (second gas), may flow into the processing chamber 201 via the first branch pipe 8c and the first drainage pipe 8b.

[0156] The acidic mist and alkaline mist flowing into the processing chamber 201 via the first drainage pipe 8b may cause crystals to precipitate on a target surface in the processing chamber 201, similar to the acidic mist and alkaline mist generated in the processing chamber 201. In addition, the chemical atmosphere flowing into the processing chamber 201 via the first drainage pipe 8b may cause particles to be generated.

[0157] In contrast, in this embodiment, the inner wall surface 102a of the drain tank 102 is hydrophobicized, so that crystals are less likely to precipitate on the inner wall surface 102a of the drain tank 102. Therefore, clogging is less likely to occur at the opening of the drain tank 102 that connects the internal space of the drain tank 102 with the exhaust pipe 103. Furthermore, since the inner surface 103a of the exhaust pipe 103 is hydrophobicized, crystals are less likely to precipitate on the inner surface 103a of the exhaust pipe 103. Therefore, problems such as the exhaust pipe 103 being clogged with crystals are less likely to occur.

[0158] Therefore, according to this embodiment, the phenomenon of the chemical atmosphere, acidic mist, and alkaline mist flowing back from the drain tank 102 toward the processing chamber 201 is unlikely to occur. As a result, the possibility that the substrate W will be contaminated by particles can be reduced.

[0159] The hydrophobicization of the inner wall surface 102a of the drain tank 102 may be performed by hydrophobizing the entire inner wall surface 102a or by hydrophobizing only a portion of the inner wall surface 102a. Specifically, only a portion of the inner wall surface 102a that is located above a predetermined water level may be hydrophobized. Alternatively, only the ceiling surface of the inner wall surface 102a may be hydrophobized. Here, the predetermined water level may be a predetermined full water level or a water level higher than the predetermined full water level.

[0160] [Embodiment 2] Next, a second embodiment of the present invention will be described with reference to Figures 9 and 10. However, differences from the first embodiment will be described, and a description of the same aspects as in the first embodiment will be omitted. The second embodiment differs from the first embodiment in that the substrate processing apparatus 100 further includes a mist supply unit 300.

[0161] 9 is a cross-sectional view schematically showing the configuration of a substrate processing unit 2 included in the substrate processing apparatus 100 of Embodiment 2. As shown in Fig. 9, the substrate processing apparatus 100 further includes a mist supply unit 300. The mist supply unit 300 has a mist nozzle 301.

[0162] A second mist, which is a mist that does not wet the hydrophobic surface TS, is sprayed from the mist nozzle 301 toward the hydrophobic surface TS. As a result, the second mist is supplied to the hydrophobic surface TS by the mist supply unit 300. In the second embodiment, the second mist is sprayed from the mist nozzle 301 toward the lower surface 231 of the rectifying plate 23 and the inner wall surface 203a of the processing chamber 201 (side wall 203).

[0163] Fig. 10 is another cross-sectional view schematically showing the configuration of the substrate processing section 2 included in the substrate processing apparatus 100 of Embodiment 2. In detail, Fig. 10 shows the inside of the substrate processing section 2 as viewed from below.

[0164] As shown in FIG. 10, the mist supply unit 300 further includes a reservoir 302 , a steam generating heater 303 , a steam pipe 304 , a steam on-off valve 305 , and a flow rate control valve 306 .

[0165] The storage unit 302 stores pure water. The steam generating heater 303 heats the pure water stored in the storage unit 302 to generate steam. One end of a steam pipe 304 is connected to the storage unit 302. The steam generating heater 303 is controlled by the control unit 11.

[0166] The other end of the water vapor pipe 304 is connected to the mist nozzle 301. The water vapor pipe 304 is a tubular member through which water vapor flows, and causes the water vapor that has flowed into the water vapor pipe 304 from the storage section 302 to flow to the mist nozzle 301.

[0167] The steam on-off valve 305 is provided in the steam pipe 304. The steam on-off valve 305 is switchable between an open state and a closed state. The control unit 11 controls the opening and closing operation of the steam on-off valve 305. The actuator of the steam on-off valve 305 is, for example, a pneumatic actuator or an electric actuator.

[0168] When the water vapor on-off valve 305 opens, water vapor flows into the mist nozzle 301 via the water vapor pipe 304. When the water vapor on-off valve 305 closes, the flow of water vapor into the mist nozzle 301 stops. The water vapor that has flowed into the mist nozzle 301 is turned into mist by the mist nozzle 301 and sprayed out from the mist nozzle 301.

[0169] The flow control valve 306 is provided in the water vapor pipe 304. The flow control valve 306 controls the flow rate of water vapor flowing through the water vapor pipe 304. Specifically, the opening degree of the flow control valve 306 can be controlled, and the flow rate of water vapor flowing through the water vapor pipe 304 corresponds to the opening degree of the flow control valve 306. The actuator of the flow control valve 306 is, for example, an electric actuator. The flow control valve 306 may be, for example, a motor needle valve. The opening degree of the flow control valve 306 is controlled by the control unit 11. The control unit 11 controls the opening degree of the flow control valve 306 so that mist is sprayed from the mist nozzle 301 in an amount that does not wet the hydrophobic surface TS.

[0170] The control unit 11 may control the mist supply unit 300 to periodically supply the second mist toward the hydrophobic surface TS. Specifically, the control unit 11 may cause the mist nozzle 301 to spray the second mist every time a certain period of time has elapsed. More specifically, the control unit 11 may cause the water vapor on-off valve 305 to transition from a closed state to an open state every time a certain period of time has elapsed. Furthermore, the control unit 11 may cause the water vapor on-off valve 305 to transition from an open state to a closed state when a predetermined period of time has elapsed since the water vapor on-off valve 305 transitioned to an open state.

[0171] Next, the mist nozzle 301 will be described with reference to Figure 10. The mist nozzle 301 extends along the sidewall 203 of the processing chamber 201. The mist nozzle 301 is a tubular member, and water vapor that flows into the mist nozzle 301 from the water vapor pipe 304 flows inside the mist nozzle 301. The mist nozzle 301 has multiple outlets that open toward the inner wall surface 203a of the sidewall 203, and are arranged along the sidewall 203 of the processing chamber 201. The mist nozzle 301 also has multiple outlets that open toward the lower surface 231 of the rectifying plate 23, and are arranged along the sidewall 203 of the processing chamber 201. A second mist is ejected from each outlet.

[0172] 9 and 10, the second embodiment of the present invention has been described. According to the second embodiment, a mist (second mist) is supplied to the hydrophobic surface TS to an extent that the mist does not wet the hydrophobic surface TS. As a result, the mist or fumes are less likely to adhere to the hydrophobic surface TS.

[0173] 9 and 10, the second mist is supplied to the inner wall surface 203a of the processing chamber 201 (side wall 203) and the lower surface 231 of the straightening vane 23, but the substrate processing apparatus 100 may include a configuration for supplying the second mist to other hydrophobic surfaces TS. For example, the substrate processing apparatus 100 may include a configuration for supplying the second mist to at least one of the inner surface 205a of the shutter 205, the surface 91a of the exhaust damper 91 (see FIG. 9), and the outer surface 431 of the cover lower part 43a.

[0174] Furthermore, in the second embodiment, the substrate processing apparatus 100 is provided with the mist supply unit 300, but the substrate processing apparatus 100 may also be provided with a water-repellent agent supply unit that supplies a water-repellent agent to the hydrophobicized surface TS. By providing the water-repellent agent supply unit in the substrate processing apparatus 100, the water-repellent agent can be periodically supplied to the hydrophobicized surface TS. As a result, the hydrophobicity of the hydrophobicized surface TS can be maintained.

[0175] The embodiments of the present invention have been described above with reference to the drawings (FIGS. 1 to 10). However, the present invention is not limited to the above embodiments and can be embodied in various forms without departing from the spirit of the present invention. Furthermore, the components disclosed in the above embodiments can be modified as appropriate. For example, some of the components shown in one embodiment may be added to the components of another embodiment, or some of the components shown in one embodiment may be deleted from the embodiment.

[0176] The drawings mainly show each component in a schematic manner to facilitate understanding of the invention, and the thickness, length, number, spacing, etc. of each component shown in the drawings may differ from the actual ones due to the convenience of creating the drawings. Furthermore, the configuration of each component shown in the above embodiment is merely an example and is not particularly limited, and it goes without saying that various modifications are possible within a range that does not substantially deviate from the effects of the present invention.

[0177] For example, the chemical solution may be any chemical solution other than SPM and SC1, as long as it generates a mist or fumes that precipitate crystals on the target surface. Furthermore, while the embodiments of the present invention have been described using an example in which crystals are precipitated on the target surface by a combination of an acidic mist and an alkaline mist, the mist derived from the chemical solution that precipitates crystals on the target surface may be a single type of mist. For example, crystals may be precipitated by a mist derived from nitric acid-hydrofluoric acid. Nitric acid-hydrofluoric acid is a mixture of hydrofluoric acid and nitric acid (HNO3).

[0178] Furthermore, in the embodiment described with reference to Figures 1 to 10, the hydrophobic surface TS includes the inner wall surface 203a of the processing chamber 201 (side wall 203), the inner surface 205a of the shutter 205, the lower surface 231 of the straightening plate 23, the outer surface 431 of the cover lower part 43a, the surface 91a of the exhaust damper 91, the inner surface 101a of the second exhaust duct 101, the inner wall surface 102a of the drain tank 102, and the inner surface 103a of the exhaust piping 103, but it is sufficient for the hydrophobic surface TS to include at least one of these target surfaces.

[0179] Furthermore, although the puddle process is performed in the embodiment described with reference to FIGS. 1 to 10, the puddle process may be omitted.

[0180] 1 to 10, three substrate processing units 2 are stacked one above the other, but the number of vertically stacked substrate processing units 2 is not limited to three. The number of vertically stacked substrate processing units 2 may be two or more. Alternatively, the substrate processing units 2 do not have to be stacked.

[0181] 1 to 10, the substrate holding unit 3 is a clamping type chuck that brings multiple chuck members 32 into contact with the peripheral edge surface of the substrate W, but the method of holding the substrate W is not particularly limited as long as it can hold the substrate W horizontally. For example, the substrate holding unit 3 may be a vacuum type chuck or a Bernoulli type chuck. [Industrial Applicability]

[0182] The present invention is useful in an apparatus for processing a substrate. [Explanation of symbols]

[0183] 3: Board holding part 4: Substrate rotation section 5: Discharge nozzle 5a: First discharge nozzle 5b: Second discharge nozzle 5c: Third discharge nozzle 7: Liquid receiving part 8b: First drainage pipe 8c: First branch pipe 9: First exhaust duct 22: Air blower mechanism 23: Rectifier plate 41: Drive unit 43: Cover part 43a: Lower part of cover 91: Exhaust damper 91a: surface 100: Substrate processing apparatus 101: Second exhaust duct 101a: Inner surface 102: Drain tank 102a: Inner wall surface 103: Exhaust piping 103a: Inner surface 201: Processing room 203a: Inner wall surface 205: Shutter 205a: Inner surface 231: Bottom surface 300: Mist supply unit 431: External surface LD: Microparticles of chemical solution TS: Hydrophobic surface W: Substrate θ: contact angle

Claims

1. A substrate processing apparatus that supplies a chemical solution to a substrate to process the substrate, a target member having a hydrophobicized surface, A substrate processing apparatus in which the hydrophobic surface is exposed to a first mist, which is a mist generated from the chemical solution, or fumes generated from the chemical solution, but is not intended to come into contact with the chemical solution or droplets of the chemical solution.

2. a processing chamber having an opening through which the substrate is carried; a shutter that opens and closes the opening; a blower mechanism for blowing air into the processing chamber from above the processing chamber; a straightening plate that straightens the air sent from the air blowing mechanism into the processing chamber; a substrate holder that holds the substrate horizontally within the processing chamber; a substrate rotation unit that rotates the substrate integrally with the substrate holding unit; a discharge nozzle that discharges the chemical solution toward the substrate held by the substrate holder; a liquid receiving section that surrounds the substrate held by the substrate holding section and receives the chemical liquid discharged from the substrate; a first exhaust duct that exhausts a first gas, which is a gas in the processing chamber, to the outside of the processing chamber; a second exhaust duct disposed outside the processing chamber and into which the first gas exhausted from the first exhaust duct flows; an exhaust damper for adjusting the flow rate of the first gas flowing from the first exhaust duct to the second exhaust duct; a drainage pipe for discharging the chemical solution from the inside of the processing chamber to the outside; a drain tank configured to store the chemical solution discharged from the inside of the processing chamber to the outside through the drainage pipe; an exhaust pipe for exhausting the second gas, which is the gas in the drain tank, to the outside of the drain tank; Equipped with The substrate rotation unit a drive unit that generates a drive force that rotates the substrate integrally with the substrate holder; a cover portion that covers the drive portion; and The hydrophobic surface is an inner wall surface of the processing chamber; an inner surface of the shutter; A lower surface of the current plate; an inner surface of the second exhaust duct; a surface of the exhaust damper; an inner surface of the exhaust pipe; a portion of the outer surface of the cover portion that is positioned below the liquid receiving portion; the inner wall surface of the drain tank; The substrate processing apparatus of claim 1 , comprising at least one of:

3. 3. The substrate processing apparatus according to claim 1, wherein the hydrophobic surface is processed to have an uneven shape that increases a contact angle of fine particles of the chemical liquid that constitutes the first mist or the fumes.

4. The chemical solution includes a first chemical solution that is an acidic chemical solution and a second chemical solution that is an alkaline chemical solution, 3 . The substrate processing apparatus according to claim 1 , wherein the first mist includes mist generated from the first chemical liquid and mist generated from the second chemical liquid.

5. the first chemical solution contains sulfuric acid / hydrogen peroxide solution or sulfuric acid, The substrate processing apparatus according to claim 4 , wherein the second chemical solution includes SC1.

6. 3 . The substrate processing apparatus according to claim 1 , further comprising a mist supply unit that supplies a second mist, which is a mist that does not wet the hydrophobic surface, toward the hydrophobic surface. 4 .

7. The substrate processing apparatus according to claim 1 , further comprising a water-repellent agent supplying unit that supplies a water-repellent agent toward the hydrophobic surface.

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