Substrate processing device and substrate processing method

Abstract

To provide a substrate processing device and a substrate processing method that suppress mixing of a plurality of process gases supplied to mutually different regions.SOLUTION: The substrate processing device comprises: a vacuum container; a rotary table 2; a raw material gas shower head 110 and an oxidation gas nozzle 120 provided in a circumferential direction thereof by being mutually spaced apart, for respectively supplying a raw material gas and an oxidation gas to the top face of the rotary table; and a first separation gas shower head 140 located between an adsorption region P1 which is supplied with the raw material and an oxidation region P2 which is supplied with the oxidation gas, for supplying a first separation gas to the top face of the rotary table; and a separation member 160 provided in the middle part of the rotary table, for supplying a second separation gas to the middle part so as to separate the atmospheres of the adsorption region P1 and the oxidation region P2. The raw material gas shower head has an inside surface located on the center side of the rotary table. The separation member has an outer wall part facing the inside surface. An opening 161a for introducing the second separation gas toward the inside surface is provided to the outer wall part.SELECTED DRAWING: Figure 2

Description

[Technical Field]

[0001] The present disclosure relates to a substrate processing apparatus and a substrate processing method. [Background technology]

[0002] An apparatus is known that includes a first processing region and a second processing region that are spaced apart from each other in the circumferential direction of a rotary table (see, for example, Patent Document 1). A first reactive gas is supplied to the first processing region, and a second reactive gas that reacts with the first reactive gas is supplied to the second processing region. The atmospheres of the first processing region and the second processing region are separated by a separation gas. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Laid-Open No. 2010-56471 Summary of the Invention [Problem to be solved by the invention]

[0004] The present disclosure provides a technique that can suppress mixing of multiple process gases supplied to different regions. [Means for solving the problem]

[0005] A substrate processing apparatus according to one aspect of the present disclosure includes a vacuum vessel, a turntable disposed within the vacuum vessel and having a substrate placed on its upper surface, a first process gas supply unit and a second process gas supply unit disposed at intervals around the circumferential direction of the turntable and configured to supply a first process gas and a second process gas to the upper surface of the turntable, respectively, a shower head disposed between a first process region to which the first process gas is supplied and a second process region to which the second process gas is supplied and configured to supply a first separation gas to the upper surface of the turntable, and a separation member disposed at a center of the turntable and configured to separate the atmospheres of the first process region and the second process region by supplying a second separation gas to the center of the turntable, wherein the shower head has an inner surface located toward the center of the turntable, and the separation member has an outer wall portion facing the inner surface, and the outer wall portion is provided with gas holes for discharging the second separation gas toward the inner surface. [Effects of the Invention]

[0006] According to the present disclosure, it is possible to prevent mixing of a plurality of process gases supplied to different regions. [Brief explanation of the drawings]

[0007] [Figure 1] 1 is a schematic cross-sectional view showing a substrate processing apparatus according to an embodiment. [Figure 2] 2 is a schematic plan view showing the configuration inside a vacuum container of the substrate processing apparatus according to the embodiment; FIG. [Figure 3] 1 is a schematic cross-sectional view showing a configuration of a central portion of a substrate processing apparatus according to an embodiment. [Figure 4] FIG. 2 is a schematic perspective view showing a separating member provided in the substrate processing apparatus according to the embodiment. [Figure 5] 10A and 10B are diagrams illustrating gas flows when a separation member has gas holes. [Figure 6] FIG. 10 is a diagram showing the gas flow when there are no gas holes in the separation member. [Figure 7] FIG. 10 is a diagram showing the in-plane distribution of the film thickness of a zirconium oxide film. DETAILED DESCRIPTION OF THE INVENTION

[0008] Hereinafter, non-limiting exemplary embodiments of the present disclosure will be described with reference to the accompanying drawings. In all the accompanying drawings, the same or corresponding reference numerals are used to designate the same or corresponding members or components, and redundant descriptions will be omitted.

[0009] [Substrate Processing Apparatus] A substrate processing apparatus according to an embodiment will be described with reference to Figures 1 and 2. Figure 1 is a schematic cross-sectional view showing the substrate processing apparatus according to an embodiment. Figure 2 is a schematic plan view showing the configuration inside a vacuum chamber 1 of the substrate processing apparatus according to an embodiment. For ease of explanation, a top plate 11 is not shown in Figure 2.

[0010] The substrate processing apparatus according to the embodiment is configured as an apparatus for simultaneously performing film formation processing on a plurality of substrates W. The substrates W are, for example, semiconductor wafers. The substrate processing apparatus includes a vacuum chamber 1 and a turntable 2.

[0011] The vacuum vessel 1 has a substantially circular shape in a plan view. The vacuum vessel 1 accommodates a substrate W. The vacuum vessel 1 is configured as a processing chamber for performing processes such as film formation on the substrate W. The vacuum vessel 1 includes a top plate 11 and a vessel body 12. The top plate 11 is provided in a position opposite the upper surface of the turntable 2. The top plate 11 covers an upper opening of the vessel body 12. The top plate 11 is configured to be detachable from the vessel body 12. A ring-shaped seal member 13 is provided on the peripheral portion of the upper surface of the vessel body 12. The seal member 13 is, for example, an O-ring.

[0012] The turntable 2 is rotatably provided inside the vacuum vessel 1. The turntable 2 has a rotation center at the center of the vacuum vessel 1. The turntable 2 is fixed at its center to a roughly cylindrical core portion 21. A drive portion 23 is connected to the core portion 21 via a rotation shaft 22 extending in the vertical direction. The drive portion 23 rotates the turntable 2 around the vertical axis, for example, clockwise, via the rotation shaft 22 and the core portion 21.

[0013] The rotary shaft 22 and the drive unit 23 are housed in a case body 20. The case body 20 has a cylindrical shape. An upper flange of the case body 20 is airtightly attached to the lower surface of the bottom part 14 of the vacuum vessel 1.

[0014] The upper surface of the turntable 2 is provided with, for example, five recesses 24 along the circumferential direction of the turntable 2. The number of recesses 24 is not limited to five and may be four or less, or six or more. Each recess 24 has a circular shape in a plan view. A substrate W is placed in each recess 24. Each recess 24 has an inner diameter slightly larger than the diameter of the substrate W. Each recess 24 has a depth approximately equal to or greater than the thickness of the substrate W. As a result, when the substrate W is placed in the recess 24, the surface of the substrate W and the surface of the area of ​​the turntable 2 where the substrate W is not placed are at the same height, or the surface of the substrate W is lower than the surface of the turntable 2. A plurality of through holes (not shown), for example, three through holes (not shown), are formed in the bottom surface of each recess 24. A lifting pin (not shown) is inserted into each through hole. The lifting pin pushes up the substrate W from below to lift and lower it.

[0015] Above the turntable 2, a source gas shower head 110, an oxidizing gas nozzle 120, a plasma gas nozzle 130, a first separation gas shower head 140, and a second separation gas shower head 150 are provided at intervals around the circumference of the vacuum chamber 1. In the illustrated example, the plasma gas nozzle 130, the second separation gas shower head 150, the source gas shower head 110, the first separation gas shower head 140, and the oxidizing gas nozzle 120 are provided in this order clockwise from the transfer port 15. The source gas shower head 110, the first separation gas shower head 140, and the second separation gas shower head 150 are made of, for example, metal. The oxidizing gas nozzle 120 and the plasma gas nozzle 130 are made of, for example, quartz.

[0016] The source gas showerhead 110 is attached to the top plate 11. The source gas showerhead 110 is disposed opposite the turntable 2. The source gas showerhead 110 has a fan-shaped planar shape with an arc-shaped top. The source gas showerhead 110 is disposed so that its inner arc follows the outer circumferential surface of the separation member 160 and its outer arc follows the inner circumferential surface of the vessel body 12. One end of a source gas supply channel L1 is connected to the source gas showerhead 110. The other end of the source gas supply channel L1 is connected to a supply source GS1 filled with a source gas. The source gas is, for example, a metal-containing gas. The metal is, for example, zirconium (Zr). The source gas may also be a silicon-containing gas. The source gas supply channel L1 is provided with a valve VA1, a flow rate controller FC1, and a valve VB1, in this order from the supply source GS1 side. The source gas showerhead 110 supplies the source gas from the supply source GS1 into the vacuum chamber 1 in a shower-like manner. The flow rate of the source gas from the supply source GS1 is controlled by a flow rate controller FC1. The supply and stop of the source gas from the supply source GS1 into the vacuum chamber 1 is controlled by valves VA1 and VB1. The region below the source gas showerhead 110 serves as an adsorption region P1 for adsorbing the source gas onto the substrate W. A supply source filled with another gas, for example, an inert gas, may be connected to the source gas showerhead 110. A gas nozzle may be provided instead of the source gas showerhead 110. In this case, the gas nozzle supplies the source gas from the supply source GS1 into the vacuum chamber 1. The source gas showerhead 110 is an example of a first process gas supply unit, the source gas is an example of a first process gas, and the adsorption region P1 is an example of a first process region.

[0017] The oxidizing gas nozzle 120 has a gas inlet port 121 at its base end attached to the outer circumferential wall of the vessel body 12. The oxidizing gas nozzle 120 is thus introduced into the vacuum vessel 1 from the outer circumferential wall of the vacuum vessel 1 and is attached so as to extend horizontally relative to the turntable 2 along the radial direction of the vessel body 12. The oxidizing gas nozzle 120 has a plurality of outlet holes (not shown) that open toward the turntable 2. The outlet holes are arranged, for example, at equal intervals along the length of the oxidizing gas nozzle 120. One end of an oxidizing gas supply flow path L2 is connected to the oxidizing gas nozzle 120. The other end of the oxidizing gas supply flow path L2 is connected to a supply source GS2 filled with oxidizing gas. The oxidizing gas is, for example, ozone (O3) gas. The oxidizing gas supply flow path L2 is provided with a valve VA2, a flow rate controller FC2, and a valve VB2, in this order from the supply source GS2 side. The oxidizing gas nozzle 120 supplies oxidizing gas from the supply source GS2 into the vacuum vessel 1 through the plurality of outlet holes. The flow rate of the oxidizing gas from the supply source GS2 is controlled by a flow rate controller FC2. The supply and stop of the oxidizing gas from the supply source GS2 into the vacuum chamber 1 is controlled by valves VA2 and VB2. The region below the oxidizing gas nozzle 120 serves as an oxidation region P2 for oxidizing the source gas adsorbed on the substrate W. A supply source filled with another gas, for example, an inert gas, may be connected to the oxidizing gas nozzle 120. The oxidizing gas nozzle 120 is an example of a second process gas supply unit, the oxidizing gas is an example of a second process gas, and the oxidation region P2 is an example of a second process region.

[0018] The plasma gas nozzle 130 has a gas inlet port 131 at its base end attached to the outer circumferential wall of the vessel body 12. The plasma gas nozzle 130 is introduced into the vacuum vessel 1 from the outer circumferential wall of the vacuum vessel 1 and is attached so as to extend horizontally relative to the turntable 2 along the radial direction of the vessel body 12. The plasma gas nozzle 130 has a plurality of outlet holes (not shown) that open toward the turntable 2. The outlet holes are arranged, for example, at equal intervals along the length of the plasma gas nozzle 130. One end of a plasma gas supply passage L3 is connected to the plasma gas nozzle 130. The other end of the plasma gas supply passage L3 is connected to a supply source GS3 filled with plasma gas. The plasma gas is, for example, oxygen (O2) gas. The plasma gas supply passage L3 is provided with a valve VA3, a flow rate controller FC3, and a valve VB3, in this order from the supply source GS3 side. The plasma gas nozzle 130 supplies the plasma gas from the supply source GS3 into the vacuum vessel 1 through the plurality of outlet holes. The flow rate of the plasma gas from the supply source GS3 is controlled by a flow rate controller FC3. The supply and stop of the plasma gas from the supply source GS3 into the vacuum chamber 1 is controlled by valves VA3 and VB3. A plasma generator 80 is provided above the plasma gas nozzle 130. The plasma generator 80 generates plasma from the plasma gas supplied by the plasma gas nozzle 130. The region below the plasma gas nozzle 130 serves as a plasma region P3 for oxidizing the source gas adsorbed on the substrate W by plasma. A supply source filled with another gas, for example, an inert gas, may be connected to the plasma gas nozzle 130. The plasma gas nozzle 130 is an example of a second process gas supply unit, the plasma gas is an example of a second process gas, and the plasma region P3 is an example of a second process region.

[0019] The first separation gas shower head 140 is provided between the adsorption region P1 and the oxidation region P2 in the circumferential direction of the turntable 2. The first separation gas shower head 140 is attached to the top plate 11. The first separation gas shower head 140 is provided facing the turntable 2. The first separation gas shower head 140 has a fan-shaped planar shape with an arc-shaped top. The first separation gas shower head 140 is disposed so that its inner arc follows the outer circumferential surface of the separation member 160 and its outer arc follows the inner circumferential surface of the vessel body 12. One end of a separation gas supply channel L4 is connected to the first separation gas shower head 140. The other end of the separation gas supply channel L4 is connected to a supply source GS4 filled with a separation gas. The separation gas is, for example, nitrogen (N2) gas. The separation gas supply channel L4 is provided with a valve VA4, a flow rate controller FC4, and a valve VB4, in this order from the supply source GS4 side. The first separation gas showerhead 140 supplies the separation gas from the supply source GS4 into the vacuum vessel 1 in a shower-like manner. The flow rate of the separation gas from the supply source GS4 is controlled by a flow rate controller FC4. The supply and stop of the separation gas from the supply source GS4 into the vacuum vessel 1 are controlled by valves VA4 and VB4. The region below the first separation gas showerhead 140 becomes a first separation region D1 for suppressing mixing of the source gas supplied to the adsorption region P1 and the oxidizing gas supplied to the oxidation region P2.

[0020] The second separation gas shower head 150 is provided between the plasma region P3 and the adsorption region P1 in the circumferential direction of the turntable 2. The second separation gas shower head 150 is attached to the top plate 11. The second separation gas shower head 150 is provided facing the turntable 2. The second separation gas shower head 150 has a fan-shaped planar shape with an arc-shaped top. The second separation gas shower head 150 is arranged so that its inner arc follows the outer circumferential surface of the separation member 160 and its outer arc follows the inner circumferential surface of the vessel body 12. One end of a separation gas supply channel L5 is connected to the second separation gas shower head 150. The other end of the separation gas supply channel L5 is connected to a supply source GS5 filled with a separation gas. The separation gas is, for example, nitrogen gas. The separation gas supply channel L5 is provided with a valve VA5, a flow rate controller FC5, and a valve VB5, in this order from the supply source GS5. The second separation gas showerhead 150 supplies the separation gas from the supply source GS5 into the vacuum vessel 1 in a shower-like manner. The flow rate of the separation gas from the supply source GS5 is controlled by a flow rate controller FC5. The supply and stop of the separation gas from the supply source GS5 into the vacuum vessel 1 are controlled by valves VA5 and VB5. The region below the second separation gas showerhead 150 becomes a second separation region D2 for suppressing mixing of the plasma gas supplied to the plasma region P3 and the source gas supplied to the adsorption region P1.

[0021] The inner peripheral surface of the container body 12 is recessed outward from the portion facing the outer end surface of the turntable 2 to the bottom 14, as shown in Fig. 1, except for the first separation region D1 and the second separation region D2. For ease of explanation, the recessed portion having a generally rectangular cross section will be referred to as the exhaust region below. Specifically, the exhaust region communicating with the adsorption region P1 will be referred to as the first exhaust region E1, and the region communicating with the oxidation region P2 will be referred to as the second exhaust region E2.

[0022] 1 and 2, a first exhaust port 61 and a second exhaust port 62 are provided at the bottom of the first exhaust area E1 and the second exhaust area E2, respectively. The first exhaust port 61 and the second exhaust port 62 are connected to a vacuum pump 64 via an exhaust pipe 63. A pressure controller 65 is provided in the exhaust pipe 63.

[0023] A heater unit 7 is provided in the space between the turntable 2 and the bottom 14 of the vacuum vessel 1. The heater unit 7 heats the substrate W on the turntable 2 via the turntable 2. An annular cover member 71 is provided below the periphery of the turntable 2. The cover member 71 separates the atmosphere from the space above the turntable 2 to the first exhaust region E1 and second exhaust region E2 from the atmosphere in which the heater unit 7 is located, thereby preventing gas from entering the region below the turntable 2.

[0024] The bottom 14, located closer to the center of rotation than the space in which the heater unit 7 is disposed, forms a protruding portion 12a that protrudes upward to approach a core portion 21 near the center of the underside of the turntable 2. A narrow space is formed between the protruding portion 12a and the core portion 21, and the gap between the inner circumferential surface of the through-hole of the rotating shaft 22 that penetrates the bottom 14 and the rotating shaft 22 is also narrow, and these narrow spaces communicate with the case body 20. The case body 20 is provided with a purge gas supply pipe 72 for supplying a purge gas such as argon gas into the narrow space to purge it. A plurality of purge gas supply pipes 73 for purging the space in which the heater unit 7 is disposed are provided in the bottom 14 of the vacuum vessel 1 at predetermined angular intervals in the circumferential direction below the heater unit 7. A lid member 74 is provided between the heater unit 7 and the turntable 2 to cover the area from the upper surface of the cover member 71 to the upper end of the protrusion 12a in the circumferential direction in order to prevent gas from entering the area where the heater unit 7 is provided. The lid member 74 is made of, for example, quartz.

[0025] A separation gas supply pipe 51 is connected to the center of the top plate 11. The separation gas supply pipe 51 supplies a separation gas such as argon gas into the inside of the separation member 160.

[0026] A separation member 160 is provided on the underside of the center of the top plate 11. The separation member 160 will be described later.

[0027] A transfer port 15 is formed in the side wall of the vacuum chamber 1, for transferring the substrate W between the transfer arm 10 and the turntable 2. The transfer port 15 is configured to be airtight and openable / closable by a gate valve (not shown). The substrate W placed in the recess 24 of the turntable 2 is transferred between the transfer arm 10 and the transfer port 15 at a position opposite the transfer port 15.

[0028] The substrate processing apparatus includes a control unit 90. The control unit 90 is, for example, a computer, and controls the operation of the entire apparatus. A program that causes the substrate processing apparatus to perform processing on substrates is stored in the memory of the control unit 90. The program is made up of steps that execute various operations of the apparatus, and is stored in a recording medium 92. The program is read into the storage unit 91 by a predetermined reading device and installed in the control unit 90. The recording medium 92 is, for example, a flash memory, a hard disk, a compact disk, a magneto-optical disk, a memory card, or a flexible disk.

[0029] [Separation member] The first separation gas shower head 140, the second separation gas shower head 150, and the separation member 160 will be described with reference to Figures 3 and 4. Figure 3 is a schematic cross-sectional view showing the configuration of the central part of the substrate processing apparatus according to the embodiment. Figure 4 is a schematic perspective view showing the separation member 160 provided in the substrate processing apparatus according to the embodiment.

[0030] The first separation gas showerhead 140 is attached to the lower surface of the top plate 11. The first separation gas showerhead 140 is provided with a gas diffusion space 141 and a plurality of discharge holes 142.

[0031] The gas diffusion space 141 is provided inside the first separation gas shower head 140. One end of a separation gas supply channel L4 is connected to the gas diffusion space 141. A separation gas from a supply source GS4 is supplied to the gas diffusion space 141 via the separation gas supply channel L4.

[0032] A plurality of discharge holes 142 are provided on the lower surface of the first separation gas showerhead 140. The plurality of discharge holes 142 are provided, for example, at equal intervals along the radial direction of the turntable 2. Each discharge hole 142 communicates with the gas diffusion space 141. Each discharge hole 142 discharges the separation gas supplied to the gas diffusion space 141 toward the turntable 2.

[0033] The first separation gas showerhead 140 has an inner surface located toward the center of the turntable 2. A protruding portion 143 that protrudes toward the center of the vacuum vessel 1 is provided midway between the upper and lower ends of the inner surface of the first separation gas showerhead 140. The protruding portion 143 has an arc shape in a plan view. The upper and lower surfaces of the protruding portion 143 are flat.

[0034] The inner surface of the first separation gas shower head 140 faces the outer surface of the protruding portion 11a above the overhanging portion 143. The protruding portion 11a is provided to protrude downward from the lower surface of the top plate 11. A gap G11 is present between the inner surface of the first separation gas shower head 140 and the outer surface of the protruding portion 11a.

[0035] The upper surface of the overhanging portion 143 faces the lower surface of the protruding portion 11a. A gap G12 exists between the upper surface of the overhanging portion 143 and the lower surface of the protruding portion 11a.

[0036] The second separation gas showerhead 150 is attached to the lower surface of the top plate 11. The second separation gas showerhead 150 is provided with a gas diffusion space 151 and a plurality of outlet holes 152.

[0037] The gas diffusion space 151 is provided inside the second separation gas showerhead 150. One end of a separation gas supply channel L5 is connected to the gas diffusion space 151. A separation gas from a supply source GS5 is supplied to the gas diffusion space 151 via the separation gas supply channel L5.

[0038] A plurality of discharge holes 152 are provided on the lower surface of the second separation gas showerhead 150. The plurality of discharge holes 152 are provided, for example, at equal intervals along the radial direction of the turntable 2. Each discharge hole 152 communicates with the gas diffusion space 151. Each discharge hole 152 discharges the separation gas supplied to the gas diffusion space 151 toward the turntable 2.

[0039] The second separation gas showerhead 150 has an inner surface located on the center side of the turntable 2. A protruding portion 153 that protrudes toward the center of the vacuum vessel 1 is provided on the inner surface of the second separation gas showerhead 150. The protruding portion 153 has an arc shape in a plan view. The upper and lower surfaces of the protruding portion 153 are flat.

[0040] The inner surface of the second separation gas shower head 150 faces the outer surface of the protrusion 11a above the overhang 153. A gap G21 is present between the inner surface of the second separation gas shower head 150 and the outer surface of the protrusion 11a.

[0041] The upper surface of the overhanging portion 153 faces the lower surface of the protruding portion 11a. A gap G22 exists between the upper surface of the overhanging portion 153 and the lower surface of the protruding portion 11a.

[0042] A seal member 11s is provided between the upper surface of the first separation gas shower head 140 and the upper surface of the second separation gas shower head 150 and the lower surface of the top plate 11. The seal member 11s is, for example, an O-ring.

[0043] The separating member 160 is attached to the underside of the center of the top plate 11. A sealing member 11t is provided between the upper surface of the separating member 160 and the underside of the top plate 11. The sealing member 11t is, for example, an O-ring. The separating member 160 supplies a separation gas to the center of the turntable 2, thereby separating the atmosphere between the adsorption region P1 and the oxidation region P2 and the atmosphere between the plasma region P3 and the adsorption region P1. The separating member 160 has a small diameter portion 161 and a large diameter portion 162.

[0044] The small diameter portion 161 has a cylindrical shape with a ceiling that is open at the bottom. An opening 161a is provided in the center of the ceiling of the small diameter portion 161. The separation gas from the separation gas supply pipe 51 is introduced into the small diameter portion 161 through the opening 161a.

[0045] The outer surface of the small diameter portion 161 faces the inner surface of the protrusion 11 a, the inner surface of the overhang portion 143, and the inner surface of the overhang portion 153.

[0046] A gap G13 exists between the outer surface of the small diameter portion 161 and the inner surface of the protruding portion 11a and the inner surface of the overhanging portion 143. A gas hole 161m is provided in the outer wall of the small diameter portion 161, penetrating the outer wall and connecting the interior of the small diameter portion 161 to the gap G13. The gas hole 161m discharges a separation gas into the gap G13. The gas hole 161m is provided, for example, at a position facing the inner surface of the overhanging portion 143, and is configured to discharge the separation gas toward the inner surface of the overhanging portion 143. The gas hole 161m may also be provided at a position facing the inner surface of the protruding portion 11a, and is configured to discharge the separation gas toward the inner surface of the protruding portion 11a.

[0047] A gap G23 exists between the outer surface of the small diameter portion 161 and the inner surface of the protruding portion 11a and the inner surface of the overhanging portion 153. A gas hole 161n is provided in the outer wall of the small diameter portion 161, penetrating the outer wall and connecting the interior of the small diameter portion 161 to the gap G23. The gas hole 161n discharges a separation gas into the gap G23. The gas hole 161n is provided, for example, at a position facing the inner surface of the overhanging portion 153, and is configured to discharge the separation gas toward the inner surface of the overhanging portion 153. The gas hole 161n may also be provided at a position facing the inner surface of the protruding portion 11a, and is configured to discharge the separation gas toward the inner surface of the protruding portion 11a.

[0048] The large diameter portion 162 is provided below the small diameter portion 161. The large diameter portion 162 has a cylindrical shape with open upper and lower ends. The outer diameter of the large diameter portion 162 is larger than the outer diameter of the small diameter portion 161. The inner diameter of the large diameter portion 162 is larger than the inner diameter of the small diameter portion 161.

[0049] The upper surface of large diameter portion 162 faces the lower surface of overhang portion 143 and the lower surface of overhang portion 153. A gap G14 exists between the upper surface of large diameter portion 162 and the lower surface of overhang portion 143. A gap G24 exists between the upper surface of large diameter portion 162 and the lower surface of overhang portion 153.

[0050] The outer surface of the large diameter portion 162 faces the inner surface of the first separation gas showerhead 140 and the inner surface of the second separation gas showerhead 150 .

[0051] A gap G15 is provided between the outer surface of the large diameter portion 162 and the inner surface of the first separation gas showerhead 140. Gas holes 162m are provided in the outer wall of the large diameter portion 162, penetrating the outer wall and connecting the interior of the large diameter portion 162 to the gap G15. The gas holes 162m are provided at a different position in the vertical direction from the gas holes 161m. The gas holes 162m discharge the separation gas into the gap G15. The gas holes 162m are provided, for example, at a position facing the inner surface of the first separation gas showerhead 140, and discharge the separation gas toward the inner surface of the first separation gas showerhead 140.

[0052] A gap G25 is defined between the outer surface of the large diameter portion 162 and the inner surface of the second separation gas shower head 150. Gas holes 162n are provided in the outer wall of the large diameter portion 162, penetrating the outer wall and connecting the interior of the large diameter portion 162 to the gap G25. The gas holes 162n are provided at a different position in the vertical direction from the gas holes 161n. The gas holes 162n discharge the separation gas into the gap G25. The gas holes 162n are provided, for example, at a position facing the inner surface of the second separation gas shower head 150, and discharge the separation gas toward the inner surface of the second separation gas shower head 150.

[0053] Each of the gaps G11 to G15 extends along the circumferential direction of the turntable 2. In each of the gaps G11 to G15, a first end in the circumferential direction of the turntable 2 communicates with the suction region P1, and a second end opposite to the first end communicates with the oxidation region P2.

[0054] Each of the gaps G21 to G25 extends along the circumferential direction of the turntable 2. In each of the gaps G21 to G25, a first end in the circumferential direction of the turntable 2 communicates with the plasma region P3, and a second end opposite to the first end communicates with the adsorption region P1.

[0055] 〔effect〕 The effects achieved by the substrate processing apparatus according to this embodiment will be described with reference to Figures 5 and 6. Figure 5 is a diagram showing the gas flow when gas holes 161m, 161n, 162m, and 162n are provided in the separating member 160. Figure 6 is a diagram showing the gas flow when gas holes 161m, 161n, 162m, and 162n are not provided in the separating member 160.

[0056] 5, when the separation member 160 has gas holes 161m and 162m, the separation gas is discharged from the gas hole 161m toward the gap G13, and the separation gas is discharged from the gas hole 162m toward the gap G15. The separation gas discharged into the gaps G13 and G15 flows toward the adsorption region P1 and the oxidation region P2 through the gaps G11 to G15. This prevents the source gas supplied to the adsorption region P1 from flowing into the oxidation region P2 through the gaps G11 to G15, and also prevents the oxidation gas supplied to the oxidation region P2 from flowing into the adsorption region P1 through the gaps G11 to G15. As a result, mixing of the source gas supplied to the adsorption region P1 and the oxidation gas supplied to the oxidation region P2 can be suppressed.

[0057] 6, if the separation member 160 does not have the gas holes 161m and 162m, the separation gas is not discharged into the gaps G13 and G15. Therefore, the source gas supplied to the adsorption region P1 is likely to flow into the oxidation region P2 through the gaps G11 to G15, and the oxidation gas supplied to the oxidation region P2 is likely to flow into the adsorption region P1 through the gaps G11 to G15. Therefore, the source gas supplied to the adsorption region P1 and the oxidation gas supplied to the oxidation region P2 may be mixed.

[0058] 5, when the separation member 160 has gas holes 161n and 162n, the separation gas is discharged from the gas hole 161n toward the gap G23, and the separation gas is discharged from the gas hole 162n toward the gap G25. The separation gas discharged into the gap G23 and the gap G25 flows toward the adsorption region P1 and the plasma region P3 through the gaps G21 to G25. This prevents the source gas supplied to the adsorption region P1 from flowing into the plasma region P3 through the gaps G21 to G25, and also prevents the plasma gas supplied to the plasma region P3 from flowing into the adsorption region P1 through the gaps G21 to G25. As a result, mixing of the source gas supplied to the adsorption region P1 and the plasma gas supplied to the plasma region P3 can be suppressed.

[0059] 6, when the substrate processing apparatus has a separation member without gas holes 161n and 162n, separation gas is not discharged into gaps G23 and G25. Therefore, the source gas supplied to adsorption region P1 tends to flow into plasma region P3 through gaps G21 to G25, and the plasma gas supplied to plasma region P3 tends to flow into adsorption region P1 through gaps G21 to G25. Therefore, the source gas supplied to adsorption region P1 and the plasma gas supplied to plasma region P3 may be mixed.

[0060] [Substrate Processing Method] The substrate processing method according to the embodiment will be described below. The substrate processing method according to the embodiment is carried out by, for example, a control unit 90 controlling the operation of each unit of the substrate processing apparatus.

[0061] First, the control unit 90 executes a process of placing a substrate W in each of the plurality of recesses 24. Specifically, the control unit 90 rotates the turntable 2 to move one of the plurality of recesses 24 to a position corresponding to the transfer port 15. Next, the control unit 90 opens the gate valve. Next, the transfer arm 10 places the substrate W in the recess 24 located at a position corresponding to the transfer port 15. Next, the control unit 90 rotates the turntable 2 to move another of the plurality of recesses 24 to a position corresponding to the transfer port 15. Next, the transfer arm 10 places the substrate W in the recess 24 located at a position corresponding to the transfer port 15. Substrates W are placed in the remaining recesses 24 in the same manner. Next, the control unit 90 closes the gate valve.

[0062] Next, the control unit 90 controls the first separation gas shower head 140, the second separation gas shower head 150, and the separation member 160 to supply a separation gas. The control unit 90 also controls the source gas shower head 110 to supply a source gas and the oxidation gas nozzle 120 to supply an oxidation gas. The control unit 90 also controls the plasma gas nozzle 130 to supply a plasma gas, and controls the plasma generator 80 to generate plasma from the plasma gas. The control unit 90 also rotates the turntable 2. As a result, a film is formed on the substrate W placed in each recess 24 by a reaction between the source gas and the oxidation gas.

[0063] Next, the control unit 90 executes a process of unloading the substrates W placed in the multiple recesses 24. Specifically, the control unit 90 rotates the turntable 2 to move one of the multiple recesses 24 to a position corresponding to the transfer port 15. Next, the control unit 90 opens the gate valve. Next, the transfer arm 10 unloads the substrate W placed in the recess 24 located at a position corresponding to the transfer port 15. Next, the control unit 90 rotates the turntable 2 to move another of the multiple recesses 24 to a position corresponding to the transfer port 15. Next, the control unit 90 unloads the substrate W placed in the recess 24 located at a position corresponding to the transfer port 15 by the transfer arm 10. The substrates W placed in the remaining recesses 24 are unloaded in the same manner.

[0064] [Example] In the examples, a zirconium oxide film was formed on a substrate W using the above-described substrate processing apparatus. As a comparative example, a zirconium oxide film was formed on a substrate W using a substrate processing apparatus having a separating member without gas holes 161m, 161n, 162m, and 162n instead of separating member 160 provided in the above-described substrate processing apparatus. The thicknesses of the zirconium oxide films formed in the examples and comparative example were measured at multiple positions within the surface of the substrate W.

[0065] Fig. 7 is a diagram showing the in-plane distribution of the film thickness of the zirconium oxide film. In Fig. 7, the horizontal axis represents the position on the substrate W along the radial direction of the turntable 2, and the vertical axis represents the film thickness [nm] of the zirconium oxide film. In Fig. 7, diamond marks represent the results of the example, and triangle marks represent the results of the comparative example.

[0066] 7, in the comparative example, the thickness of the zirconium oxide film increases from the outside to the shaft side of the turntable 2, whereas in the example, there is almost no difference in the thickness of the zirconium oxide film between the outside and shaft side of the turntable 2. This result shows that by providing the separating member 160 with gas holes 161m, 161n, 162m, and 162n in the substrate processing apparatus, it is possible to reduce the buildup of zirconium oxide on the shaft side of the turntable 2. This is thought to be because the provision of gas holes 161m, 161n, 162m, and 162n in the separating member 160 suppresses mixing of the source gas and the reactant gas on the shaft side of the turntable 2.

[0067] As shown in FIG. 7 , in the Example, the thickness of the zirconium oxide film is thinner at all positions on the substrate W along the radial direction of the turntable 2 compared to the Comparative Example. When oxidizing gas flows from oxidation region P2 to adsorption region P1 on the axial side of the turntable 2, the oxidizing gas flows from the axial side of the turntable 2 toward the outside in adsorption region P1. Therefore, in the chemical vapor deposition (CVD) mode, the thickness of the zirconium oxide film is thicker at all positions on the substrate W along the radial direction of the turntable 2. In the Example, the thickness of the zirconium oxide film is thinner at all positions on the substrate W along the radial direction of the turntable 2 compared to the Comparative Example. From this result, it is considered that the CVD reaction caused by the intrusion of oxidizing gas from the axial side of the turntable 2 is suppressed in the Example compared to the Comparative Example.

[0068] The embodiments disclosed herein should be considered to be illustrative in all respects and not restrictive, and the above-described embodiments may be omitted, substituted, or modified in various ways without departing from the scope and spirit of the appended claims. [Explanation of symbols]

[0069] 1 Vacuum container 2 Rotating Tables 110 Raw gas shower head 120 Oxidizing gas nozzle 130 Plasma gas nozzle 140 First separation gas shower head 150 Second Separation Gas Showerhead 160 Separation member 161m, 161n, 162m, 162n gas holes P1 Adsorption area P2 oxidation region W substrate

Claims

1. A vacuum vessel; a rotary table provided in the vacuum chamber and having a substrate placed on its upper surface; a first processing gas supply unit and a second processing gas supply unit that are spaced apart from each other in a circumferential direction of the rotary table and that supply a first processing gas and a second processing gas to the upper surface of the rotary table, respectively; a shower head provided between a first processing region to which the first processing gas is supplied and a second processing region to which the second processing gas is supplied, the shower head supplying a first separation gas to the upper surface of the rotary table; a separation member provided at a center of the rotary table, the separation member separating the atmosphere of the first processing region from the atmosphere of the second processing region by supplying a second separation gas to the center of the rotary table; Equipped with the showerhead has an inner surface located on a center side of the rotary table, the separating member has an outer wall portion facing the inner surface, The outer wall portion is provided with a gas hole for discharging the second separation gas toward the inner surface. Substrate processing equipment.

2. the vacuum vessel has a main body that is open at the top and a top plate that closes the opening of the main body; The shower head and the separation member are attached to the lower surface of the top plate. The substrate processing apparatus according to claim 1 .

3. a gap extending along a circumferential direction of the turntable is provided between the inner surface of the shower head and the outer wall portion of the separation member; In the circumferential direction of the rotary table, the gap has a first end communicating with the first processing region and a second end opposite to the first end communicating with the first processing region. The substrate processing apparatus according to claim 1 .

4. the gas hole is provided at a position communicating with the gap, the separation member supplies the second separation gas to the gap from the inside of the outer wall portion through the gas hole. The substrate processing apparatus according to claim 3 .

5. The gas holes are provided in plural at different positions in the vertical direction. The substrate processing apparatus according to claim 1 .

6. the first process gas is a source gas; the second process gas is an oxidizing gas; The substrate processing apparatus according to claim 1 .

7. A substrate processing method using a substrate processing apparatus, comprising: The substrate processing apparatus includes: A vacuum vessel; a rotary table provided in the vacuum chamber and having a substrate placed on its upper surface; a first processing gas supply unit and a second processing gas supply unit that are spaced apart from each other in a circumferential direction of the rotary table and that supply a first processing gas and a second processing gas to the upper surface of the rotary table, respectively; a shower head provided between a first processing region to which the first processing gas is supplied and a second processing region to which the second processing gas is supplied, the shower head supplying a first separation gas to the upper surface of the rotary table; a separation member provided at a center of the rotary table, the separation member separating the atmosphere of the first processing region from the atmosphere of the second processing region by supplying a second separation gas to the center of the rotary table; Equipped with the showerhead has an inner surface located on a center side of the rotary table, the separating member has an outer wall portion facing the inner surface, a gas hole for discharging the second separation gas toward the inner surface of the outer wall; rotating the turntable while supplying the first separation gas from the showerhead, the second separation gas from the separating member, the first process gas from the first process gas supply unit, and the second process gas from the second process gas supply unit, thereby forming a film on the substrate placed on the upper surface of the turntable by reaction between the first process gas and the second process gas. Substrate processing method.

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