Processing device, processing method, manufacturing method of substrate, manufacturing method of semiconductor package, and manufacturing method of wiring

Abstract

To provide a processing apparatus capable of accurately performing fine concavo-convex processing over a region to be processed of a substrate.SOLUTION: A processing apparatus for forming concavities and convexities on a surface of a substrate by an ablation processing using a laser beam includes: a first optical function part including a molding optical system for molding an irradiation shape of the laser beam from a laser light source into a rectangular shape; a second optical function part including a mask including an effective area having a pattern; and a substrate stage for holding the substrate. The mask includes a mask irradiation area which is a part of the effective area of the mask and to which the laser beam having passed through the first optical function part is irradiated. The substrate includes a substrate irradiation area on which the pattern is projected by the laser beam having passed through the mask. The substrate irradiation area is smaller than the processing target area of the substrate, and the mask and the substrate stage are swept and irradiated while overlapping a part of the substrate irradiation area during the processing operation on the substrate to perform a surface roughness processing of the processing target area of the substrate.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present invention relates to a processing apparatus, a processing method, and a method for manufacturing a substrate. [Background technology]

[0002] Semiconductor package substrates have been actively developed in line with the trend toward "More Than More" and toward SoC (System on a Chip), which integrates systems into a single chip.

[0003] Furthermore, the structure of semiconductor package substrates is becoming more complex and denser, and excimer laser-based devices are being used to manufacture the base substrates.

[0004] As semiconductor package substrates become increasingly dense, the wiring on the substrates is also required to be highly precise, and the wiring is becoming multi-layered. As the wiring becomes thinner and more multi-layered, the line and space (L&S) becomes narrower and more complex. As the wiring width becomes narrower, the wiring resistance tends to increase.

[0005] In order to connect multiple layers of wiring, via holes (VIA) are provided, and to solve the problem of increased wiring resistance, trenches are provided in the substrate during the manufacture of semiconductor package substrates, and wiring is formed along these trenches. By forming such wiring, the cross-sectional area of ​​the wiring can be increased, thereby suppressing the increase in wiring resistance.

[0006] An example of a method for manufacturing such a semiconductor package substrate will be described below. First, build-up film is laminated on both sides of the inner layer substrate (core layer) made of glass epoxy resin material using a dedicated vacuum laminator. The surface of the build-up film thus obtained is then processed to create the above-mentioned through holes and trenches, and a metal layer is then formed on it by plating to form electrodes.

[0007] To meet the demand for higher density, the diameter of the required through holes is becoming smaller. There is also a demand for cylindrical through holes with a small difference between the top and bottom diameters (cylindrical VIA). Cylindrical trenches are also being required.

[0008] To process cylindrical holes or cylindrical trenches as precisely as possible in a substrate, it is effective to use a laser beam with high resolution and high energy density. For this type of processing, it is preferable to use an excimer laser rather than a solid-state laser device. Although the focal depth of an excimer laser is shallow, this laser can process with high resolution and high energy density, allowing for the formation of cylindrical VIA holes or cylindrical trenches at precise positions without blurring.

[0009] Patent Document 1 describes an invention relating to a laser drilling method and apparatus. For example, claim 1 of Patent Document 1 describes irradiating a linear or rectangular beam onto a processing area of ​​a substrate to be processed by a contact mask method through a contact mask, and scanning the linear or rectangular beam across the contact mask.

[0010] Furthermore, paragraph 0037 of Patent Document 1 describes irradiating the entire pattern of a contact mask by oscillating a laser oscillator and moving a linear beam in the L-axis direction using a scanning mechanism. However, this method cannot process large substrates that require deep recesses and projections.

[0011] Furthermore, paragraphs 0049 and 0050 of Patent Document 1 describe a method of using a two-axis scanning mechanism to move a rectangular beam and sequentially irradiate each of the four divided regions of a contact mask with the rectangular beam, thereby drilling holes in the processing region directly below each region. However, with this method, although the interior of each processing region can be processed to a uniform depth, there is a problem with processing quality, such as no processing at the boundary between each processing region or over-processing at the boundary by about twice the processing depth within each processing area.

[0012] Patent Document 2 describes an invention relating to a processing device and processing method for ablation processing. The processing device for ablation processing described in claim 1 of Patent Document 2 is equipped with a scanning mechanism that moves a line beam forming unit containing a line beam forming optical system relative to the device body and scans a line-shaped light.

[0013] Regarding this scanning mechanism, paragraph 0022 of Patent Document 2 states, "The scanning mechanism 60 is capable of moving the line beam forming unit 20 back and forth along the scanning direction (X direction), and as the line beam forming unit 20 moves, a line of light perpendicular to the scanning direction (X direction) moves relative to the mask M and the projection optical system 30, scanning the mask M and the substrate W fixed to the mask stage 40 and the processing stage 50, respectively."

[0014] Furthermore, paragraph 0026 of Patent Document 2 states, "The processing stage 50 fixes the substrate W by vacuum suction or the like, and can position the substrate W relative to the mask M by moving and rotating in the X and Y directions. It can also move in steps along the scanning direction (here, the X direction) so that ablation processing can be performed over the entire substrate W."

[0015] Furthermore, paragraph 0033 of Patent Document 2 states that "the line beam forming unit 20 is moved relative to the device body 15 to scan the line-shaped light."

[0016] The invention of Patent Document 2 cannot process large substrates that require deep recesses and protrusions. Furthermore, because the laser beam moves during scanning, it is difficult to irradiate the entire area of ​​a large mask. This makes it difficult to handle larger substrate surfaces. Furthermore, the optical elements after the mask must be large, which makes them prone to distortion and unsuitable for high-precision processing. Inserting a reduction optical lens requires the use of a very large-diameter lens, which not only increases distortion but also makes the component very expensive. It also makes it difficult to manage heat generated by the laser beam, resulting in poor processing accuracy during long-term operation. [Prior art documents] [Patent documents]

[0017] [Patent Document 1] Japanese Patent Application Laid-Open No. 2001-79678 [Patent Document 2] Patent Publication No. 2021-49560 Summary of the Invention [Problem to be solved by the invention]

[0018] An example of uneven processing of semiconductor substrates is the uneven processing of the substrate surface by irradiating the substrate with a laser beam that has passed through an opening pattern in a mask, i.e., uneven processing by ablation. Ablation processing makes it possible to not only create through holes, but also to form trenches with high aspect ratios without completely penetrating the substrate.

[0019] Ideally, a laser beam with uniform energy would be irradiated over an area that covers the entire effective area of ​​the mask, but in recent years, the processing area on the semiconductor substrate surface has become larger, and as a result, the effective area of ​​the mask has also become larger.

[0020] Therefore, if a uniform laser beam is irradiated onto an area that covers the entire surface, the energy density of the laser beam will be extremely reduced, and it will not reach the processing threshold energy of the substrate surface, making processing impossible. To process the substrate surface, it is necessary to irradiate a laser beam with a certain level of energy density. Furthermore, to process cylindrical shapes with high aspect ratios (cylindrical VIA, cylindrical trench), the laser energy density must be high or the wall surface will become blunt.

[0021] Furthermore, the laser beam energy required for ablation processing requires a much higher energy density than that of, for example, an exposure device, and consideration must be given to heat.

[0022] Furthermore, even if an energy density sufficient for ablation processing is applied, a single irradiation of the laser beam is not enough to achieve the desired processing depth, and multiple irradiations are required. In particular, in recent years, there has been a growing demand for a higher aspect ratio for processing, and there is a demand for deeper processing of concave and convex processing depths, so it is necessary to irradiate the same position on the substrate with the laser beam multiple times to achieve deep ablation processing.

[0023] In the past, ablation processing devices and ablation processing methods have been proposed, such as those described in Patent Documents 1 and 2. However, as mentioned above, these were not technologies capable of precisely processing fine irregularities over the entire surface of the substrate to be processed.

[0024] The present invention has been made to solve the above problems, and aims to provide a processing device that can accurately perform fine uneven processing over the entire processing area of ​​a substrate, a processing method that can accurately perform fine uneven processing over the entire processing area of ​​a substrate, and a substrate manufacturing method that can manufacture a substrate on which fine uneven processing is formed over the entire processing area of ​​a substrate with high precision. [Means for solving the problem]

[0025] In order to solve the above problems, the present invention provides a processing apparatus according to a first aspect, which is a processing apparatus for forming fine irregularities on a surface of a substrate by ablation processing using irradiation energy of a laser beam, comprising: a first optical function unit including a laser light source that irradiates the laser beam in a pulsed manner and a shaping optical system that shapes the irradiation shape of the laser beam from the laser light source into a rectangular shape; a second optical function unit including a mask having an effective area with a pattern corresponding to a processing area of ​​the substrate; a substrate stage for holding the substrate; Including, the mask includes a mask irradiation area that is irradiated with the laser beam that has passed through the first optical function portion, the mask irradiation area being a part of the effective area of ​​the mask; the substrate includes a substrate illumination area onto which the pattern is projected by the laser beam through the mask; the substrate irradiation area is smaller than the processing area of ​​the substrate; The processing device is configured to perform surface irregularity processing on the substrate in the processing operation by sweeping and irradiating the mask and the substrate stage while overlapping a portion of the substrate irradiation area.

[0026] With such a processing device, it is possible to precisely process unevenness that is approximately uniform across the processing area of ​​the substrate. Therefore, with the processing device of this aspect, it is possible to precisely process fine unevenness across the processing area of ​​the substrate.

[0027] Furthermore, such a processing device does not require the use of high laser energy, and can be constructed inexpensively without using expensive laser light sources or optical components. It is also possible to suppress deterioration of accuracy due to thermal drift of the laser beam, enabling high-precision processing.

[0028] Such a processing device can perform high-speed, deep VIA processing and / or trench processing. In addition, the substrate irradiation area per shot can be made small, enabling high-density irradiation.

[0029] The present invention also provides a processing apparatus according to a second aspect, which is an apparatus for forming fine irregularities on a surface of a substrate by ablation processing using irradiation energy of a laser beam, comprising: a first optical function unit including a laser light source that irradiates the laser beam in a pulsed manner and a shaping optical system that shapes the irradiation shape of the laser beam from the laser light source into a rectangular shape; a second optical function unit including a mask having an effective area with a pattern corresponding to a processing area of ​​the substrate; a substrate stage for holding the substrate; Including, the mask includes a mask irradiation area that is irradiated with the laser beam that has passed through the first optical function portion, the mask irradiation area being a part of the effective area of ​​the mask; the substrate includes a substrate illumination area onto which the pattern is projected by the laser beam through the mask; the substrate irradiation area is smaller than the processing area of ​​the substrate; the mask and the substrate stage are configured to maintain a relative corresponding positional relationship by moving synchronously in a plane direction substantially perpendicular to the direction in which the laser beam is irradiated, The processing device is configured to, during processing of the substrate, operate the mask and the substrate stage in synchronization with each other while fixing the irradiation position of the laser beam, sweep-irradiate the mask and the substrate stage, and perform surface irregularity processing of the processed area of ​​the substrate.

[0030] With such a processing device, it is possible to precisely process unevenness that is approximately uniform across the processing area of ​​the substrate. Therefore, with the processing device of this aspect, it is possible to precisely process fine unevenness across the processing area of ​​the substrate.

[0031] Furthermore, such a processing device does not require the use of high laser energy, can be constructed inexpensively without using expensive laser light sources or optical components, and can suppress deterioration of accuracy due to thermal drift of the laser beam, enabling high-precision processing.In addition, because small optical components can be used, inexpensive and high-precision components can be used.

[0032] Such a processing device can perform processing with higher precision than when scanning a laser beam, and can also use a large-area mask, allowing processing to be performed at a higher energy density.

[0033] In the processing apparatus of the first aspect, the mask and the substrate stage are configured to maintain a relative corresponding positional relationship by operating synchronously in a plane direction substantially perpendicular to the direction in which the laser beam is irradiated, It is preferable that, during the processing operation on the substrate, the mask and the substrate stage are operated in synchronization with each other while the irradiation position of the laser beam is fixed, and the mask and the substrate stage are swept and irradiated while overlapping a portion of the substrate irradiation area, thereby performing surface unevenness processing on the processed area of ​​the substrate.

[0034] Such a processing device can perform processing with higher precision than when scanning a laser beam, and can also use a large-area mask, allowing processing to be performed at a higher energy density.

[0035] The laser beam is preferably an excimer laser.

[0036] By using an excimer laser, it is possible to process more precise concave and convex shapes. In addition, because the excimer laser has good energy absorption efficiency in the processing material, it is possible to perform good ablation processing.

[0037] It is preferable that the apparatus further comprises a mask stage for holding the mask and for sweeping the mask.

[0038] A processing apparatus including such a mask stage can efficiently perform a mask sweeping operation.

[0039] It is preferable that the apparatus further includes a third optical function section provided with a reduction projection optical system between the second optical function section and the substrate stage.

[0040] By further including such a third optical function portion, the mask can be enlarged to be larger than the actual processing pattern, and the energy of the laser beam irradiated onto the mask can be made smaller than the processing energy irradiated onto the substrate. This makes it possible to suppress thermal drift due to the energy of the laser beam, thereby suppressing thermal expansion of the mask and enabling high-precision processing even after long-term processing operations. In addition, since the mask can be made larger than the actual processing pattern, it is less susceptible to the effects of minute dust particles.

[0041] It is preferable that the third optical function section further comprises a cooling means for cooling the reduction projection optical system.

[0042] With such a processing device, it is possible to further suppress thermal drift caused by the energy of the laser beam, and it is possible to perform high-precision processing even after a long processing operation.

[0043] The shaping optical system is preferably an optical system that includes a plurality of cylindrical lenses and shapes the laser beam from the laser light source into a laser beam whose irradiation shape is the rectangular shape and whose irradiation energy density is uniform.

[0044] A processing apparatus including such an optical system is capable of shaping a high-quality laser beam having a rectangular beam profile with extremely uniform energy density.

[0045] The shaping optical system is preferably an optical system that includes a plurality of cylindrical lenses and shapes the laser beam from the laser light source into a laser beam whose irradiation shape is the rectangular shape and a top hat shape.

[0046] A processing apparatus including such an optical system can irradiate a region to be processed on a substrate with a top-hat laser beam, which has a rectangular shape and an extremely uniform energy density.

[0047] The second optical function unit may be configured to further shape the irradiation shape of the laser beam that has passed through the first optical function unit through the mask.

[0048] The second optical function section can further shape the irradiation shape of the rectangular laser beam, for example, in accordance with a pattern corresponding to the region to be processed on the substrate.

[0049] In the sweep irradiation in at least one direction, it is preferable that the mask and the substrate stage are swept non-stop while the laser beam is irradiated in pulses onto the mask and the substrate stage.

[0050] By performing such a sweep, it is possible to significantly reduce the sweep time compared to a step-and-repeat operation in which running and stopping are repeated.

[0051] Furthermore, since the stage does not have to be frequently moved and stopped as in step-and-repeat, the heat load on the stage can be suppressed and highly accurate positioning can be maintained for a long period of time.

[0052] an imaging means for reading a characteristic portion of the substrate; an imaging means for reading a characteristic portion of the mask; an alignment mechanism that aligns the relative positions of the substrate and the mask based on position information of the characteristic portion of the substrate and the characteristic portion of the mask; It is preferable that it further comprises

[0053] By providing these imaging means and alignment mechanisms, it becomes possible to perform uneven processing by projecting a mask pattern onto an accurate position on the substrate surface.

[0054] In this case, it is preferable that the apparatus further comprises means for correcting the processed shape of the substrate with respect to the pattern of the mask based on information from the alignment mechanism.

[0055] Such a processing device enables more accurate processing of concaves and convexes on a substrate.

[0056] It is preferable that the mask is installed in a direction substantially perpendicular to a horizontal surface on which the processing device is installed.

[0057] With this type of processing equipment, compared to conventional methods in which the mask is placed on a horizontal surface, the effects of mask bending can be suppressed, allowing for highly accurate uneven processing, and since dust is less likely to adhere to the mask surface, defects caused by dust are less likely to occur. Furthermore, since most of the long optical path can be aligned along a horizontal surface, the height of the equipment can be reduced.

[0058] Further, in the present invention, as a processing method of a first aspect, there is provided a processing method for forming fine irregularities on a surface of a substrate by ablation processing using irradiation energy of a laser beam, the method comprising: Preparing a processing device including a first optical function unit having a laser light source and a shaping optical system, a second optical function unit having a mask including an effective area having a pattern corresponding to a processing area of ​​the substrate, and a substrate stage that holds the substrate; In the first optical function unit, the laser beam is irradiated in a pulsed manner from the laser light source to the shaping optical system, and the irradiation shape of the laser beam is shaped into a rectangular shape; In the second optical function unit, the laser beam that has passed through the first optical function unit is irradiated onto a mask irradiation area, which is a part of the effective area of ​​the mask; irradiating a substrate illumination area of ​​the substrate with the laser beam that has passed through the mask, thereby projecting the pattern onto the substrate illumination area; Including, The substrate irradiation area is set to be smaller than the processing area of ​​the substrate; The present invention provides a processing method in which, during processing of the substrate, the mask and the substrate stage are irradiated in a sweeping manner while overlapping a portion of the substrate irradiation area, thereby processing the surface unevenness of the processing area of ​​the substrate.

[0059] With this processing method, it is possible to precisely process unevenness that is approximately uniform across the entire processing area of ​​the substrate. Therefore, with the processing method of this aspect, it is possible to precisely process fine unevenness across the entire processing area of ​​the substrate.

[0060] Furthermore, this type of processing method does not require the use of high laser energy, and can be constructed inexpensively without using expensive laser light sources or optical components. In addition, it is possible to suppress deterioration of accuracy due to thermal drift of the laser beam, and high-precision processing can be performed.

[0061] Such a processing method allows for high-speed, deep VIA processing and / or trench processing, and also allows for a small substrate irradiation area per shot, enabling high-density irradiation.

[0062] Further, in the present invention, a processing method according to a second aspect is a processing method for forming fine irregularities on a surface of a substrate by ablation processing using irradiation energy of a laser beam, the method comprising: By passing the rectangular laser beam through a mask, the laser beam is irradiated onto the substrate so that the substrate irradiation area is smaller than the processed region of the substrate; The present invention provides a processing method for processing the surface of a processing area of ​​a substrate to form irregularities while overlapping a part of the substrate irradiation area during processing of the substrate.

[0063] This processing method makes it possible to precisely process unevenness that is almost uniform across the entire processing area of ​​the substrate, and therefore the processing device of this aspect can precisely process fine unevenness across the entire processing area of ​​the substrate.

[0064] Further, in the present invention, a processing method according to a third aspect is a processing method for forming fine irregularities on a surface of a substrate by ablation processing using irradiation energy of a laser beam, the method comprising: Preparing a processing device including a first optical function unit having a laser light source and a shaping optical system, a second optical function unit having a mask including an effective area having a pattern corresponding to a processing area of ​​the substrate, and a substrate stage that holds the substrate; In the first optical function unit, the laser beam is irradiated in a pulsed manner from the laser light source to the shaping optical system, and the irradiation shape of the laser beam is shaped into a rectangular shape; In the second optical function unit, the laser beam that has passed through the first optical function unit is irradiated onto a mask irradiation area, which is a part of the effective area of ​​the mask; irradiating a substrate illumination area of ​​the substrate with the laser beam that has passed through the mask, thereby projecting the pattern onto the substrate illumination area; Including, The substrate irradiation area is set to be smaller than the processing area of ​​the substrate; the mask and the substrate stage are synchronously moved in a plane direction substantially perpendicular to the direction in which the laser beam is irradiated, thereby maintaining a relative corresponding positional relationship; The present invention provides a processing method in which, during processing of the substrate, the mask and the substrate stage are operated in synchronization with each other while the irradiation position of the laser beam is fixed, and the mask and the substrate stage are irradiated in a sweeping manner, thereby performing surface irregularity processing of the processing area of ​​the substrate.

[0065] With this processing method, it is possible to precisely process unevenness that is approximately uniform across the entire processing area of ​​the substrate. Therefore, with the processing method of this aspect, it is possible to precisely process fine unevenness across the entire processing area of ​​the substrate.

[0066] Furthermore, this processing method does not require the use of high laser energy, and can be constructed inexpensively without using expensive laser light sources or optical components. It is also possible to suppress deterioration of accuracy due to thermal drift of the laser beam, enabling high-precision processing. Furthermore, because small optical components can be used, inexpensive and high-precision components can be used.

[0067] This processing method allows for processing with higher precision than scanning with a laser beam, and also allows for the use of a large-area mask, which allows for processing with a higher energy density.

[0068] In the processing method of the first aspect, the mask and the substrate stage are synchronously moved in a plane direction substantially perpendicular to the direction in which the laser beam is irradiated, thereby maintaining a relative corresponding positional relationship; During the processing operation on the substrate, it is preferable to fix the irradiation position of the laser beam, operate the mask and the substrate stage in synchronization, and sweep-irradiate the mask and the substrate stage while overlapping a portion of the substrate irradiation area, thereby performing surface unevenness processing on the processed area of ​​the substrate.

[0069] This type of processing method allows for processing with higher precision than scanning with a laser beam, and also allows for the use of a large-area mask, which allows for processing with a higher energy density.

[0070] It is preferable to use an excimer laser as the laser beam.

[0071] By using an excimer laser, it is possible to process more precise irregularities. In addition, the excimer laser has good energy absorption efficiency in the processing material, making it possible to perform good ablation processing.

[0072] In the processing method of the first or third aspect, it is preferable to further use a mask stage that holds the mask and sweeps the mask.

[0073] In this way, the mask can be swept efficiently.

[0074] In the processing method of the first or third aspect, it is preferable that the processing apparatus further includes a third optical function unit equipped with a reduction projection optical system between the second optical function unit and the substrate stage.

[0075] By using a processing device that further includes such a third optical function unit, the mask can be enlarged to be larger than the actual processing pattern, and as a result, the energy of the laser beam irradiated onto the mask can be made smaller than the processing energy irradiated onto the substrate. This makes it possible to suppress thermal drift due to the energy of the laser beam, thereby suppressing thermal expansion of the mask and enabling high-precision processing even after long-term processing operations. In addition, because the mask can be made larger than the actual processing pattern, it is less susceptible to the effects of minute dust particles.

[0076] In this case, it is preferable that the third optical function section further comprises a cooling means for cooling the reduction projection optical system.

[0077] By using such a third optical function portion, it becomes possible to perform high-precision processing even after a long processing operation.

[0078] In the processing method of the first or third aspect, it is preferable to use an optical system equipped with a plurality of cylindrical lenses as the shaping optical system, and to shape the laser beam from the laser light source into a uniform laser beam having the rectangular irradiation shape.

[0079] In this way, it is possible to form a high-quality laser beam having a rectangular beam profile with extremely uniform energy density.

[0080] In the processing method of the first or third aspect, the irradiation shape of the laser beam that has passed through the first optical function part can be further shaped in the second optical function part through the mask.

[0081] The second optical function section can further shape the irradiation shape of the rectangular laser beam, for example, in accordance with a pattern corresponding to the region to be processed on the substrate.

[0082] In the processing method of the first or third aspect, in the sweep irradiation in at least one direction, it is preferable that the mask and the substrate stage are swept non-stop while the laser beam is pulse-irradiated onto the mask and the substrate stage.

[0083] By performing such a sweep, it is possible to significantly reduce the sweep time compared to a step-and-repeat operation in which running and stopping are repeated.

[0084] Furthermore, since the stage does not have to be frequently moved and stopped as in step-and-repeat, the heat load on the stage can be suppressed and highly accurate positioning can be maintained for a long period of time.

[0085] In the processing method of the first or third aspect, the sweep irradiation can be repeated a plurality of times for each processing region of the substrate.

[0086] In this way, by repeating the sweep irradiation multiple times for each region to be processed and processing to the desired depth, high-speed processing can be performed.

[0087] In the processing method of the first aspect or the third aspect, the method includes: reading a feature portion of the substrate and a feature portion of the mask; using an alignment mechanism to align the relative positions of the substrate and the mask based on position information of the feature portion of the substrate and the feature portion of the mask; It is preferred that it further comprises:

[0088] In this way, it becomes possible to perform uneven processing by projecting a mask pattern onto an accurate position on the substrate surface.

[0089] In this case, it is preferable that the method further includes correcting the processed shape of the substrate with respect to the pattern of the mask based on information from the alignment mechanism.

[0090] Such a processing method allows more accurate processing of concaves and convexes on the substrate.

[0091] In the processing method of the first or third aspect, it is preferable that the processing device used be one in which the mask is installed in a direction perpendicular to a horizontal plane on which the processing device is installed.

[0092] By using this type of processing equipment, the effects of mask bending can be suppressed compared to conventional methods in which the mask is placed on a horizontal surface, allowing for highly accurate uneven processing, and since dust is less likely to adhere to the mask surface, defects caused by dust are less likely to occur. Furthermore, since most of the long optical path can be aligned along a horizontal surface, the height of the equipment can be reduced.

[0093] Further, in the present invention, as a first aspect of a method for manufacturing a substrate, there is provided a method for manufacturing a substrate having fine irregularities formed on a surface by ablation processing using irradiation energy of a laser beam, the method comprising the steps of: Preparing a processing device including a first optical function unit having a laser light source and a shaping optical system, a second optical function unit having a mask including an effective area having a pattern corresponding to a processing area of ​​the substrate, and a substrate stage that holds the substrate; In the first optical function unit, the laser beam is irradiated in a pulsed manner from the laser light source to the shaping optical system, and the irradiation shape of the laser beam is shaped into a rectangular shape; In the second optical function unit, the laser beam that has passed through the first optical function unit is irradiated onto a mask irradiation area, which is a part of the effective area of ​​the mask; irradiating a substrate illumination area of ​​the substrate with the laser beam that has passed through the mask, thereby projecting the pattern onto the substrate illumination area; Including, The substrate irradiation area is set to be smaller than the processing area of ​​the substrate; The method for manufacturing a substrate provides a method for processing the surface of a processing area of ​​the substrate by sweeping irradiation of the mask and the substrate stage while overlapping a portion of the substrate irradiation area during the processing operation on the substrate, thereby processing the surface of the processing area of ​​the substrate into irregularities.

[0094] Such a substrate manufacturing method makes it possible to precisely perform uniform uneven processing over the entire processing area of ​​the substrate, and therefore, with this type of substrate manufacturing method, it is possible to manufacture a substrate on which fine uneven processing is precisely formed over the entire processing area of ​​the substrate.

[0095] Furthermore, such a substrate manufacturing method does not require the use of high laser energy, and can be constructed inexpensively without using expensive laser light sources or optical components. In addition, it is possible to suppress deterioration of accuracy due to thermal drift of the laser beam, and it is possible to manufacture substrates that have been processed with high precision.

[0096] Such a substrate manufacturing method allows for high-speed, deep VIA processing and / or trench processing, and also allows for a small substrate irradiation area per shot, enabling high-density irradiation.

[0097] Further, in the present invention, there is provided a second aspect of a method for manufacturing a substrate, which is a method for manufacturing a substrate having fine irregularities formed on a surface by ablation processing using irradiation energy of a laser beam, comprising the steps of: A processing method for forming fine irregularities on a surface of a substrate by ablation processing using irradiation energy of a laser beam, comprising: By passing the rectangular laser beam through a mask, the laser beam is irradiated onto the substrate so that the substrate irradiation area is smaller than the processed region of the substrate; The present invention provides a method for manufacturing a substrate, in which, during a processing operation on the substrate, surface unevenness processing is performed on a processing area of ​​the substrate while overlapping a part of the substrate irradiation area.

[0098] Such a substrate manufacturing method makes it possible to precisely perform uniform uneven processing over the entire processing area of ​​the substrate, and therefore, with this type of substrate manufacturing method, it is possible to manufacture a substrate on which fine uneven processing is precisely formed over the entire processing area of ​​the substrate.

[0099] Further, in the present invention, there is provided a third aspect of a method for manufacturing a substrate, which is a method for manufacturing a substrate having fine irregularities formed on a surface by ablation processing using irradiation energy of a laser beam, comprising the steps of: Preparing a processing device including a first optical function unit having a laser light source and a shaping optical system, a second optical function unit having a mask including an effective area having a pattern corresponding to a processing area of ​​the substrate, and a substrate stage that holds the substrate; In the first optical function unit, the laser beam is irradiated in a pulsed manner from the laser light source to the shaping optical system, and the irradiation shape of the laser beam is shaped into a rectangular shape; In the second optical function unit, the laser beam that has passed through the first optical function unit is irradiated onto a mask irradiation area, which is a part of the effective area of ​​the mask; irradiating a substrate illumination area of ​​the substrate with the laser beam that has passed through the mask, thereby projecting the pattern onto the substrate illumination area; Including, The substrate irradiation area is set to be smaller than the processing area of ​​the substrate; the mask and the substrate stage are synchronously moved in a plane direction substantially perpendicular to the direction in which the laser beam is irradiated, thereby maintaining a relative corresponding positional relationship; The method for manufacturing a substrate provides that, during the processing operation on the substrate, the mask and the substrate stage are operated in synchronization with each other while the irradiation position of the laser beam is fixed, and the mask and the substrate stage are irradiated in a sweeping manner, thereby processing the surface irregularities of the processed area of ​​the substrate.

[0100] Such a substrate manufacturing method makes it possible to precisely perform uniform uneven processing over the entire processing area of ​​the substrate, and therefore, with this type of substrate manufacturing method, it is possible to manufacture a substrate on which fine uneven processing is precisely formed over the entire processing area of ​​the substrate.

[0101] Furthermore, this type of substrate manufacturing method does not require the use of high laser energy, and can be constructed inexpensively without using expensive laser light sources or optical components, and can suppress deterioration of accuracy due to thermal drift of the laser beam, making it possible to manufacture substrates that have been processed with high precision. Furthermore, because small optical components can be used, inexpensive, high-precision components can be used.

[0102] Such a substrate manufacturing method allows for processing with higher precision than when scanning with a laser beam, and also allows for the use of a large-area mask, which allows for processing with a higher energy density.

[0103] For example, the substrate may be a substrate for a semiconductor package.

[0104] The method for manufacturing a substrate of the present invention can be particularly advantageously applied to the manufacture of semiconductor packages. [Effects of the Invention]

[0105] As described above, the processing apparatus of the present invention can accurately process minute concaves and convexes over the entire processing area of ​​the substrate.

[0106] Furthermore, the processing method of the present invention makes it possible to precisely process minute concaves and convexes over the entire processing area of ​​the substrate.

[0107] Furthermore, the substrate manufacturing method of the present invention makes it possible to manufacture a substrate on which minute concave and convex processing is formed with high precision over the entire processing area of ​​the substrate. [Brief explanation of the drawings]

[0108] [Figure 1] 1 is a schematic diagram showing an example of a processing apparatus of the present invention. [Figure 2] 1 is a diagram showing an example of the relationship between a processing region of a substrate and a substrate irradiation area in the present invention. [Figure 3] FIG. 10 is a diagram illustrating an example of overlapping irradiation in one axial direction. [Figure 4] FIG. 10 is a diagram illustrating an example of overlapping irradiation from the first to third rows. [Figure 5] FIG. 10 is a conceptual diagram of shaping the irradiation shape of a laser beam in an example of a shaping optical system. DETAILED DESCRIPTION OF THE INVENTION

[0109] As described above, there has been a demand for the development of a processing device that can accurately perform fine uneven processing over the entire processing area of ​​a substrate.

[0110] As a result of extensive research into the above-mentioned problems, the inventors have discovered that in a process for forming fine irregularities on the surface of a substrate by ablation processing using the irradiation energy of a laser beam, the substrate irradiation area irradiated with the laser beam in one shot is made smaller than the area to be processed of the substrate, and during the processing operation on the substrate, the mask and substrate stage are swept and irradiated while overlapping a portion of the substrate irradiation area, thereby processing the surface irregularities of the area to be processed of the substrate, and / or the mask and substrate stage are operated in synchronization with a fixed irradiation position of the laser beam, and the mask and substrate stage are swept and irradiated, thereby processing the surface irregularities of the area to be processed of the substrate, thereby making it possible to accurately process fine irregularities over the entire area to be processed of the substrate, and have completed the present invention.

[0111] That is, the processing apparatus according to the first aspect of the present invention is a processing apparatus that forms fine irregularities on the surface of a substrate by ablation processing using irradiation energy of a laser beam, a first optical function unit including a laser light source that irradiates the laser beam in a pulsed manner and a shaping optical system that shapes the irradiation shape of the laser beam from the laser light source into a rectangular shape; a second optical function unit including a mask having an effective area with a pattern corresponding to a processing area of ​​the substrate; a substrate stage for holding the substrate; Including, the mask includes a mask irradiation area that is irradiated with the laser beam that has passed through the first optical function portion, the mask irradiation area being a part of the effective area of ​​the mask; the substrate includes a substrate illumination area onto which the pattern is projected by the laser beam through the mask; the substrate irradiation area is smaller than the processing area of ​​the substrate; This processing device is configured to, during processing operations on the substrate, sweep and irradiate the mask and the substrate stage while overlapping a portion of the substrate irradiation area, thereby performing surface unevenness processing on the processing area of ​​the substrate.

[0112] A processing apparatus according to a second aspect of the present invention is a processing apparatus for forming fine irregularities on a surface of a substrate by ablation processing using irradiation energy of a laser beam, a first optical function unit including a laser light source that irradiates the laser beam in a pulsed manner and a shaping optical system that shapes the irradiation shape of the laser beam from the laser light source into a rectangular shape; a second optical function unit including a mask having an effective area with a pattern corresponding to a processing area of ​​the substrate; a substrate stage for holding the substrate; Including, the mask includes a mask irradiation area that is irradiated with the laser beam that has passed through the first optical function portion, the mask irradiation area being a part of the effective area of ​​the mask; the substrate includes a substrate illumination area onto which the pattern is projected by the laser beam through the mask; the substrate irradiation area is smaller than the processing area of ​​the substrate; the mask and the substrate stage are configured to maintain a relative corresponding positional relationship by moving synchronously in a plane direction substantially perpendicular to the direction in which the laser beam is irradiated, This processing device is configured to, during processing of the substrate, fix the irradiation position of the laser beam, operate the mask and the substrate stage in synchronization, sweep-irradiate the mask and the substrate stage, and perform surface irregularity processing of the processed area of ​​the substrate.

[0113] Further, a processing method according to a first aspect of the present invention is a processing method for forming fine irregularities on a surface of a substrate by ablation processing using irradiation energy of a laser beam, the method comprising: Preparing a processing device including a first optical function unit having a laser light source and a shaping optical system, a second optical function unit having a mask including an effective area having a pattern corresponding to a processing area of ​​the substrate, and a substrate stage that holds the substrate; In the first optical function unit, the laser beam is irradiated in a pulsed manner from the laser light source to the shaping optical system, and the irradiation shape of the laser beam is shaped into a rectangular shape; In the second optical function unit, the laser beam that has passed through the first optical function unit is irradiated onto a mask irradiation area, which is a part of the effective area of ​​the mask; irradiating a substrate illumination area of ​​the substrate with the laser beam that has passed through the mask, thereby projecting the pattern onto the substrate illumination area; Including, The substrate irradiation area is set to be smaller than the processing area of ​​the substrate; During a processing operation on the substrate, the mask and the substrate stage are irradiated with light in a sweeping manner while overlapping a portion of the substrate irradiation area, thereby performing surface roughness processing on the processing area of ​​the substrate.

[0114] A processing method according to a second aspect of the present invention is a processing method for forming fine irregularities on a surface of a substrate by ablation processing using irradiation energy of a laser beam, the method comprising: By passing the rectangular laser beam through a mask, the laser beam is irradiated onto the substrate so that the substrate irradiation area is smaller than the processed region of the substrate; This is a processing method in which, during a processing operation on the substrate, surface irregularity processing is performed on a processing area of ​​the substrate while overlapping a part of the substrate irradiation area.

[0115] A processing method according to a third aspect of the present invention is a processing method for forming fine irregularities on a surface of a substrate by ablation processing using irradiation energy of a laser beam, the method comprising: Preparing a processing device including a first optical function unit having a laser light source and a shaping optical system, a second optical function unit having a mask including an effective area having a pattern corresponding to a processing area of ​​the substrate, and a substrate stage that holds the substrate; In the first optical function unit, the laser beam is irradiated in a pulsed manner from the laser light source to the shaping optical system, and the irradiation shape of the laser beam is shaped into a rectangular shape; In the second optical function unit, the laser beam that has passed through the first optical function unit is irradiated onto a mask irradiation area, which is a part of the effective area of ​​the mask; irradiating a substrate illumination area of ​​the substrate with the laser beam that has passed through the mask, thereby projecting the pattern onto the substrate illumination area; Including, The substrate irradiation area is set to be smaller than the processing area of ​​the substrate; the mask and the substrate stage are synchronously moved in a plane direction substantially perpendicular to the direction in which the laser beam is irradiated, thereby maintaining a relative corresponding positional relationship; During the processing operation on the substrate, the mask and the substrate stage are operated in synchronization with each other while the irradiation position of the laser beam is fixed, and the mask and the substrate stage are irradiated in a sweeping manner, thereby performing surface irregularity processing on the processing area of ​​the substrate.

[0116] A first aspect of the present invention provides a method for manufacturing a substrate having fine irregularities formed on a surface thereof by ablation processing using irradiation energy of a laser beam, the method comprising the steps of: Preparing a processing device including a first optical function unit having a laser light source and a shaping optical system, a second optical function unit having a mask including an effective area having a pattern corresponding to a processing area of ​​the substrate, and a substrate stage that holds the substrate; In the first optical function unit, the laser beam is irradiated in a pulsed manner from the laser light source to the shaping optical system, and the irradiation shape of the laser beam is shaped into a rectangular shape; In the second optical function unit, the laser beam that has passed through the first optical function unit is irradiated onto a mask irradiation area, which is a part of the effective area of ​​the mask; irradiating a substrate illumination area of ​​the substrate with the laser beam that has passed through the mask, thereby projecting the pattern onto the substrate illumination area; Including, The substrate irradiation area is set to be smaller than the processing area of ​​the substrate; This is a method for manufacturing a substrate, in which, during a processing operation on the substrate, the mask and the substrate stage are irradiated in a sweeping manner while overlapping a portion of the substrate irradiation area, thereby processing the surface irregularities of the processing area of ​​the substrate.

[0117] A second aspect of the present invention provides a method for manufacturing a substrate having fine irregularities formed on a surface thereof by ablation processing using irradiation energy of a laser beam, the method comprising the steps of: A processing method for forming fine irregularities on a surface of a substrate by ablation processing using irradiation energy of a laser beam, comprising: By passing the rectangular laser beam through a mask, the laser beam is irradiated onto the substrate so that the substrate irradiation area is smaller than the processed region of the substrate; This is a method for manufacturing a substrate, in which, during a processing operation on the substrate, surface irregularity processing is performed on a processing area of ​​the substrate while overlapping a part of the substrate irradiation area.

[0118] A third aspect of the present invention provides a method for manufacturing a substrate having fine irregularities formed on a surface thereof by ablation processing using irradiation energy of a laser beam, the method comprising the steps of: Preparing a processing device including a first optical function unit having a laser light source and a shaping optical system, a second optical function unit having a mask including an effective area having a pattern corresponding to a processing area of ​​the substrate, and a substrate stage that holds the substrate; In the first optical function unit, the laser beam is irradiated in a pulsed manner from the laser light source to the shaping optical system, and the irradiation shape of the laser beam is shaped into a rectangular shape; In the second optical function unit, the laser beam that has passed through the first optical function unit is irradiated onto a mask irradiation area, which is a part of the effective area of ​​the mask; irradiating a substrate illumination area of ​​the substrate with the laser beam that has passed through the mask, thereby projecting the pattern onto the substrate illumination area; Including, The substrate irradiation area is set to be smaller than the processing area of ​​the substrate; the mask and the substrate stage are synchronously moved in a plane direction substantially perpendicular to the direction in which the laser beam is irradiated, thereby maintaining a relative corresponding positional relationship; This is a method for manufacturing a substrate, in which, during the processing operation on the substrate, the mask and the substrate stage are operated in synchronization with each other while the irradiation position of the laser beam is fixed, and the mask and the substrate stage are irradiated in a sweeping manner, thereby processing the surface irregularities of the processed area of ​​the substrate.

[0119] The present invention will be described in detail below, but the present invention is not limited thereto.

[0120] [Processing equipment] Fig. 1 is a schematic diagram showing an example of a processing apparatus of the present invention. The processing apparatus 100 shown in Fig. 1 is a processing apparatus that forms fine irregularities on the surface of a substrate 80 by ablation processing using the irradiation energy of a laser beam 4.

[0121] The processing apparatus 100 shown in FIG. 1 includes a first optical function unit 10, a second optical function unit 20, and a substrate stage 40 that holds a substrate 80.

[0122] The first optical function unit 10 includes a laser light source (laser oscillator) 11 that irradiates (emits) a pulsed laser beam 1, and a shaping optical system 12 that receives the laser beam 1 from the laser light source 11. The shaping optical system 12 shapes the irradiation shape of the laser beam 1, for example, as shown in Fig. 1(a), into a rectangular irradiation shape, for example, as shown in Fig. 1(b). The laser beam 2 having a rectangular irradiation shape can exhibit a uniform irradiation energy density, and has a beam profile that exhibits, for example, a top hat shape.

[0123] The second optical function unit 20 includes a mask 21. The mask 21 includes an effective area 22 having a pattern corresponding to the region of the substrate 80 to be processed.

[0124] The mask 21 includes a mask irradiation area that is irradiated with the laser beam 2 that has passed through the first optical function portion 10. This mask irradiation area is a part of an effective area 22 of the mask 21.

[0125] The laser beam 3 having the irradiation shape shown in Fig. 1(c) passes through the second optical function unit 20, and has its traveling direction changed by an optional folding mirror 50 as shown in Fig. 1(d), and is incident on an optional third optical function unit 30 (described later). The processing apparatus 100 shown in Fig. 1 is configured so that the laser beam 4 emitted from the third optical function unit 30 is irradiated onto a portion of a substrate 80 held on a substrate stage 40.

[0126] The substrate 80 includes a substrate illumination area onto which a pattern is projected by the laser beam through the mask 21 (and optional third optical function 30).

[0127] 2 shows an example of the relationship between a substrate irradiation area 90 on the substrate 80 irradiated with the laser beam 4 and a processing region 81 on the substrate 80. As shown in FIG. 2, the substrate irradiation area 90 is smaller than the processing region 81 on the substrate 80.

[0128] 2 is an area irradiated by one shot of the pulsed laser beam 4. In addition, since the pattern is projected onto the substrate irradiation area 90 by the laser beam that has passed through the mask 21, the substrate irradiation area 90 corresponds to the mask irradiation area, which is a part of the effective area 22 of the mask 21.

[0129] In the example of Fig. 1, the mask 21 is configured to be scanned along sweep axes 21X and 21Y shown in Fig. 1. Furthermore, the substrate stage 40 is configured to be scanned along sweep axes 80X and 80Y shown in Fig. 1.

[0130] The processing apparatus 100 of the present invention is configured to sweep and irradiate the mask 21 and the substrate stage 40 with the laser beam 4, and perform surface roughness processing of the processing area 81 of the substrate 80.

[0131] Furthermore, the processing apparatus 100 of the present invention is configured to perform superimposed irradiation (first embodiment), and / or to perform synchronous sweep irradiation while fixing the irradiation position of the laser beam (second embodiment), as described in detail below.

[0132] [First aspect] The processing apparatus 100 of the first aspect is configured to sweep and irradiate the mask 20 and the substrate stage 80 while overlapping a portion of the substrate irradiation area 90 during processing operation on the substrate 80, thereby processing the surface irregularities of the processing area 81 of the substrate 80. Hereinafter, irradiating the laser beam while overlapping a portion of the substrate irradiation area 90 is referred to as overlapping irradiation.

[0133] Next, an example of overlapping irradiation will be described with reference to FIGS.

[0134] FIG. 3(a) shows a substrate irradiation area 90 on a substrate 80 by one shot of a pulsed laser beam. In this example of overlapping irradiation, the mask 20 and the substrate stage 80 are swept, and the laser beam is irradiated so that the substrate irradiation area 91 of the first shot and the substrate irradiation area 92 of the second shot partially overlap in the direction of the arrow along the sweep axis 80X, as shown in FIG. 3(b). Subsequently, the laser beam is irradiated so that the substrate irradiation area 93 of the third shot partially overlaps the substrate irradiation area 91 of the first shot and the substrate irradiation area 92 of the second shot. By repeating this overlapping irradiation from the fourth shot onwards, the processed region expands along the sweep axis 80X.

[0135] FIG. 4(a) shows a process of ablating the first row of the processing area 81 along the sweep axis 80X using the overlapping irradiation shown in FIG. 3(b). Next, as shown in FIG. 4(b), overlapping irradiation is performed along the sweep axis 80X so as to overlap a portion of the area overlapping-irradiated in FIG. 4(a) in the direction of the sweep axis 80Y (orthogonal to the sweep axis 80X), and the second row of the processing area 81 is ablated along the sweep axis 80X. Next, as shown in FIG. 4(c), overlapping irradiation is performed along the sweep axis 80X so as to overlap a portion of the area overlapping-irradiated in FIGS. 4(a) and (b) in the direction of the sweep axis 80Y, and the third row of the processing area 81 is ablated along the sweep axis 80X. By repeating this overlapping irradiation for the fourth and subsequent rows of the processing area 81, the processing area expands across the processing area 81. As a result, overlapping irradiation can be performed at regular intervals in the two directions of the sweep axes 80X and 80Y.

[0136] The overlapping portions of the substrate irradiation area are irradiated with the laser beam multiple times, resulting in deep ablation processing in that portion according to the mask pattern shape, achieving the desired processing depth in the processing region 81 according to the mask pattern shape.

[0137] In the processing apparatus 100 of the first aspect, a pulsed, rectangular laser beam with a uniform irradiation energy density is converted into a processing shape through a mask 21 and the laser beam 4 is irradiated onto a substrate irradiation area 90 of a substrate 80. Therefore, it is possible to perform multiple irradiations with a uniform processing depth in the substrate irradiation area 90 in the substrate 80 corresponding to the mask irradiation area, which is a part of the effective area 22 of the mask 21, and it is possible to accurately process unevenness with approximately uniformity across the processing area 81 of the substrate 80. Therefore, with this processing apparatus 100, it is possible to accurately process fine unevenness across the processing area 81 of the substrate 80.

[0138] Furthermore, such a processing device 100 does not require the use of high laser energy, and can be constructed inexpensively without using expensive laser light sources or optical components. In addition, it is possible to suppress deterioration of accuracy due to thermal drift of the laser beam, and high-precision processing can be performed.

[0139] Furthermore, since the processing device 100 can irradiate the substrate with the laser beam 4 in a pulsed manner, the above-mentioned superimposed irradiation can be performed at high speed.

[0140] That is, the processing apparatus 100 according to the first aspect of the present invention can perform high-speed, deep VIA processing and / or trench processing.

[0141] Furthermore, with the processing apparatus 100 according to the first aspect of the present invention, overlapping irradiation is performed, so the area of ​​the substrate irradiated with one shot can be made smaller, thereby enabling high-density irradiation.

[0142] [Second aspect] The processing apparatus 100 of the second embodiment is configured so that the mask 21 and the substrate stage 40 maintain a relative corresponding positional relationship by operating synchronously in a plane direction approximately perpendicular to the direction in which the laser beams 2 and 4 are irradiated.

[0143] In the example of FIG. 1, the mask 21 and the substrate stage 40 are configured such that the movement of the mask 21 along the sweep axis 21X is synchronized with the movement of the substrate stage 80 along the sweep axis 80X, and the movement of the mask 21 along the sweep axis 21Y is synchronized with the movement of the substrate stage 80 along the sweep axis 80Y, so that the mask 21 and the substrate stage 40 maintain a relative corresponding positional relationship.

[0144] Furthermore, the processing apparatus 100 of the second embodiment is configured to, during processing of the substrate 80, synchronously operate the mask 21 and the substrate stage 40 while fixing the irradiation position of the laser beam 4, sweep-irradiate the mask 21 and the substrate stage 40, and perform surface unevenness processing of the processing area 81 of the substrate 80. Such sweep-irradiation that can be performed by the processing apparatus 100 of the second embodiment is hereinafter referred to as "synchronous sweep-irradiation while fixing the irradiation position of the laser beam."

[0145] Such synchronous sweep irradiation allows for processing with higher accuracy than scanning a laser beam. Furthermore, with such processing apparatus 100, a large-area mask can be used as mask 21, and processing can be performed with a higher energy density by using the large-area mask in combination with the third optical function unit 30, which will be described later.

[0146] Furthermore, in the processing apparatus 100 of the second embodiment, similarly to the processing apparatus 100 of the first embodiment, a laser beam 4, which is a pulsed, rectangular laser beam with a uniform irradiation energy density and converted into a processing shape through a mask 21, is irradiated onto a substrate irradiation area 90 of a substrate 80. Therefore, similarly to the first embodiment, the processing apparatus 100 of the second embodiment can perform multiple irradiations with a uniform processing depth in the substrate irradiation area 90 in the substrate 80 corresponding to the mask irradiation area, which is a part of the effective area 22 of the mask 21, and can accurately process unevenness that is approximately uniform across the processing area 81 of the substrate 80. Therefore, this processing apparatus 100 can also accurately process fine unevenness across the processing area 81 of the substrate 80.

[0147] Furthermore, such a processing device 100 does not require the use of high laser energy, and can be constructed inexpensively without using expensive laser light sources or optical components, and can suppress deterioration of accuracy due to thermal drift of the laser beam, thereby enabling high-precision processing. Furthermore, because small optical components can be used, inexpensive and high-precision components can be used.

[0148] In addition, it is preferable that the processing apparatus 100 of the first embodiment is configured to perform, in addition to the superimposed irradiation described above, synchronous sweep irradiation with the laser beam irradiation position fixed, as in the second embodiment.

[0149] Optional items of each component of the processing apparatus 100 of the present invention will be described below.

[0150] [First optical function section 10] The laser beam 1 emitted from the laser light source 11 is preferably an excimer laser.

[0151] Excimer lasers have a shorter wavelength than conventional solid-state lasers, such as LD-pumped solid-state (DPSS) lasers, and therefore have higher resolution. Therefore, by using an excimer laser, it is possible to process more precise irregularities. Furthermore, for example, excimer lasers have very high absorption for epoxy-based substrate materials, and have high processing capabilities.

[0152] The shaping optical system 12 is preferably an optical system equipped with a plurality of cylindrical lenses and configured to shape the laser beam 1 from the laser light source 11 into a laser beam having a rectangular irradiation shape and a uniform irradiation energy density, particularly a top-hat shaped laser beam.

[0153] FIG. 5 shows a conceptual diagram of shaping the irradiation shape of a laser beam in a shaping optical system equipped with multiple cylindrical lenses.

[0154] The shaping optical system 12 shown in Fig. 5 includes a plurality of cylindrical lenses, including an X1 cylindrical lens 13, a Y1 cylindrical lens 14, an X2 cylindrical lens 15, and a Y2 cylindrical lens 16, and a condenser lens 17. The X1 cylindrical lens 13 and the X2 cylindrical lens 15 are arranged at a distance twice their focal length f1, as shown in the lower part of Fig. 5. The Y1 cylindrical lens 14 and the Y2 cylindrical lens 16 are also arranged at a distance twice their focal length f1.

[0155] The laser beam 1 emitted by the laser light source 11 shown in FIG. 1 has a non-uniform irradiation shape (beam profile) as shown in FIG. 5. When the laser beam 1 having such an irradiation shape enters the shaping optical system 12, each component of the laser beam 1 is shaped according to its position in the X and Y directions. The lower part of FIG. 5 schematically shows, for example, the component indicated by "2" being shaped as it passes through cylindrical lenses 14 and 16. Each component of the laser beam 1 is shaped by the cylindrical lenses 13 to 16 and focused at a position a focal length f2 away from the focusing lens 17. By focusing each component, as shown in FIG. 5, the laser beam 2 has a top-hat beam shape, and is emitted from the shaping optical system 12 as output light.

[0156] By rearranging the cylindrical lens configuration in the X and Y directions, it is possible to shape the beam into a square, rectangular, or other shape.

[0157] By using such multiple cylindrical lenses 13 to 16 to shape the irradiation shape of the laser beam 1, it is possible to shape a high-quality laser beam 2 having a rectangular shape with extremely uniform energy density, particularly a top-hat type beam profile.

[0158] In particular, in the first embodiment of the processing apparatus 100, by performing superimposed irradiation using such a rectangular beam profile, there are no dead spots, which are areas that are not irradiated, and uneven processing that is averaged within the tolerance range of the target processing can be performed, making it possible to perform extremely efficient uneven processing of the substrate 80.

[0159] [Second optical function section 20] It is preferable that the second optical function unit 20 further includes a mask stage that holds the mask 21 and sweeps the mask 21 . By attaching a sweep axis to the mask stage on which the mask 21 is held, the mask can be efficiently swept.

[0160] Furthermore, by attaching a correction function (tilt axis, θ axis) to the mask stage, correction can be easily made to the surface shape of the substrate 80 to be processed, thereby enabling accurate processing.

[0161] The second optical function section 20 can be configured to further shape the irradiation shape of the laser beam 2 that has passed through the first optical function section 10 through a mask 21 . The second optical function section 20 can further shape the irradiation shape of the laser beam 2 shaped into a rectangular shape, for example, according to a pattern corresponding to the processing area 81 of the substrate 80.

[0162] It is preferable that the mask 21 is installed in a direction substantially perpendicular to the horizontal surface on which the processing apparatus 100 is installed.

[0163] As mentioned above, the substrate processing size is required to be larger, and accordingly the mask size is also increasing. Furthermore, when a reduction projection optical system is used, the mask size becomes even larger.

[0164] On the other hand, the resolution of the uneven processing on the substrate is increasing, and distortion in the mask image affects the processing accuracy.

[0165] When the mask is installed in the same horizontal direction as the horizontal surface on which the apparatus is installed, as in Patent Document 2, if the mask is installed alone, distortion occurs due to gravity, and processing accuracy deteriorates.

[0166] When a support is placed under the mask to prevent bending, the support needs to be optically transparent. However, as the mask becomes larger, the support material needs to be thicker, which not only creates cost problems but also increases the absorption of laser energy in the support material, reducing the energy efficiency of the laser irradiation.

[0167] Furthermore, if the mask is placed on a horizontal surface, there is a greater risk of dust getting on the mask, and if production continues with dust on it, it will cause quality defects in a large number of products.

[0168] Furthermore, if dust gets between the mask and the support material below the mask, not only can it cause product defects or damage to the mask, but the refractive index differs in the small gap that occurs between the support material and the mask, causing optical non-uniformity, which results in an uneven laser beam being emitted.

[0169] Furthermore, since the optical path from the laser light source to the substrate is long, if the mask is placed horizontally, the height of the device becomes large. By placing the mask upright, the height of the device can be reduced.

[0170] As in this preferred example, if the mask 21 is installed in a direction approximately perpendicular to the horizontal surface on which the processing device 100 is installed, the mask 21 will not bend, and there is no need for support to prevent bending using an optically transparent material, so the efficiency of laser energy usage is high and processing can be performed with high precision and extremely uniformity.

[0171] In the processing apparatus 100 of the present invention, the irradiation area of ​​the laser beam 3 that has passed through the mask 21 can be reduced using an optional reduction optical system 31, which will be described below, to increase the energy density of the laser beam 4 that is irradiated onto the substrate. Therefore, even if the mask 21 is large and has a large area, the desired fine uneven processing can be achieved by using a reduction optical system 31 that matches the mask 21.

[0172] There is no particular limitation on the size of the mask 21. For example, a mask 21 having an outer shape of 700 mm×800 mm and an effective area 22 of 600 mm×600 mm can be used.

[0173] [Third optical function section 30] As in the processing apparatus 100 shown in FIG. 1, it is preferable to further include a third optical function unit having a reduction projection optical system 31 between the second optical function unit 20 and the substrate stage 40 .

[0174] In recent years, substrate processing has become increasingly finer, requiring a minimum processing width of several microns. This also has an effect on minute dust particles, and minute dust particles adhering to the mask portion in particular can cause a large number of processing defects. For this reason, the mask 21 is enlarged larger than the actual processing area, and the laser beam 3 that passes through the mask 21 is subjected to reduced projection exposure using a reduced projection optical system 31 at the subsequent stage, thereby minimizing the effect of minute dust particles.

[0175] Furthermore, by enlarging the mask 21 more than the actual processing pattern, the energy of the laser beam 2 that strikes the mask 21 can be made smaller than the processing energy. If the reduction magnification of the reduction projection optical system 31 is N, the energy of the laser beam that strikes the mask surface is 1 / (N 2 ) As a result, it is possible to suppress the thermal drift caused by the energy of the laser beam 2, thereby suppressing the thermal expansion of the mask 21 and enabling high-precision processing even after a long processing operation.

[0176] Furthermore, deterioration of optical components (for example, the shaping optical system 12 and the mask 21) due to the heat of the laser beam can be suppressed, so the life of the optical components can be extended.

[0177] Furthermore, the processing apparatus 100 configured to perform synchronous sweep irradiation while the irradiation position of the laser beam is fixed as described above can use a reduced projection lens with an extremely small aperture compared to the method of moving the irradiation position of the laser beam, such as that of Patent Document 2. Therefore, in addition to being advantageous in terms of cost, there is little lens distortion and lens aberration can be reduced, making it possible to achieve extremely high processing precision for the substrate.

[0178] The reduction projection optical system 31 can include a pair of reduction projection lenses. When the reduction projection optical system 31 is an infinity optical system, the magnification achieved by the reduction projection optical system 31 can be adjusted, for example, by adjusting the ratio of the focal lengths of the reduction projection lenses and the distance between the reduction projection lenses.

[0179] The reduction projection lens preferably has a high NA (numerical aperture). By using a reduction projection lens with a high NA, it is possible to form vias and trenches that are closer to cylindrical shapes.

[0180] The NA of the reduction projection lens is preferably selected in accordance with the energy density required for processing the substrate 80. The NA of the reduction projection lens is preferably 0.12 or greater.

[0181] It is preferable that the third optical function section 30 further includes a cooling means for cooling the reduction projection optical system 31 .

[0182] By providing a cooling means, it is possible to further suppress the influence of heat due to the laser beam energy in the reduction projection optical system 30. In the reduction projection optical system 30, the laser beam 3 that has passed through the mask 21 is reduced and projected at 1 / N, so the energy of the laser beam that passes through the lens part at the tip of the objective is N times less than the energy of the laser beam irradiated on the mask 21. 2 Therefore, by providing a cooling function to the reduction projection optical system 30 in order to suppress this thermal energy, it is possible to suppress the thermal drift caused by the energy of the laser beam, and it becomes possible to perform high-precision processing even after a long processing operation.

[0183] Furthermore, the processing apparatus 100, which is configured to perform synchronous sweep irradiation while maintaining a fixed laser beam irradiation position, as described above, allows the use of a reduction projection lens with a much smaller diameter than the method described in Patent Document 2. The cooling means for the reduction projection lens is not directly attached to the lens itself, but rather cools the jacket that holds the lens. Therefore, when the lens diameter is large, while temperature control is possible around the periphery of the lens, the cooling effect is less widespread near the crucial center, making heat management difficult. Therefore, even a small amount of energy absorbed into the lens during long-term laser beam irradiation can easily cause thermal distortion. If the third optical function unit 30 has a cooling function, the lens diameter can be reduced, thereby reducing such problems.

[0184] Furthermore, it is possible to prevent defects caused by irradiation of the reduction projection optical system 31 with a laser beam, thereby extending its lifespan.

[0185] [Sweep mechanism] It is preferable that the processing apparatus 100 is configured to sweep the mask 21 and the substrate stage 40 non-stop while irradiating the mask 21 and the substrate stage 40 with pulsed laser beams 2 and 4, respectively, in a sweep irradiation in at least one direction.

[0186] By performing non-stop sweep irradiation, it is possible to significantly reduce the sweep time compared to step-and-repeat operation, which repeats running and stopping. In particular, since there is no need to perform positioning when stopping from a running state, it is possible to prevent deterioration of position accuracy due to acceleration and deceleration.

[0187] Furthermore, because these operations occur frequently, repeated stops and starts place a heavy load on the travel axis and motor.By performing non-stop sweep irradiation operations, the load on the axis can be reduced and heat generation in the travel axis can be suppressed, further preventing deterioration of positional accuracy due to thermal drift and enabling extremely high-precision substrate unevenness processing.

[0188] [Imaging means and alignment mechanism] The processing apparatus 100 of the present invention includes an imaging means for reading a characteristic portion of a substrate 80, an imaging means for reading a characteristic portion of a mask 21, and an alignment mechanism for aligning the relative positions of the substrate and the mask based on position information of the characteristic portion of the substrate and the characteristic portion of the mask. It is preferred that it further comprises:

[0189] 1 includes a mask alignment camera 23 as an imaging means for reading characteristic portions of the mask 21, a substrate alignment camera 60 as an imaging means for reading characteristic portions of the substrate 80, and an alignment mechanism (not shown). The mask alignment camera 23 is configured to send position information of the characteristic portions of the mask 21 to the alignment mechanism. The substrate alignment camera 60 is configured to send position information of the characteristic portions of the substrate 80 to the alignment mechanism. The alignment mechanism is configured to adjust the relative positions of the substrate 80 and the mask 21 based on this position information.

[0190] By aligning the position of the mask 21 with the position of the substrate 80 using the imaging means, it is possible to perform uneven processing by projecting the mask pattern onto the substrate 80 surface at an accurate position.

[0191] In particular, boards are often processed across multiple layers, and if the processing position of each layer is not precisely aligned with the target position, the circuits on each layer will not be connected, or even if they are connected, there will be high conduction resistance and other quality defects. To prevent this, precision in the processing position is necessary.

[0192] In this case, it is preferable to further include a means for correcting the processed shape of the substrate 80 with respect to the pattern of the mask 21 based on information from the alignment mechanism.

[0193] The shape of the projected image of the pattern on the mask 21 is not necessarily exactly similar to the processed shape of the substrate 80, and the magnification is not always the same due to the influence of thermal expansion, etc. Also, there are cases where it becomes necessary to deform the processed shape on the substrate 80 relative to the projected image of the mask 21 due to minute distortions or deformations of the substrate 80.

[0194] Therefore, as described above, the positions of the mask 21 and the substrate 80 are acquired by imaging means (mask alignment camera 23 and substrate alignment camera 60), and based on this information, the projected image of the mask 21 is aligned with the shape of the substrate to be processed, thereby enabling accurate processing of recesses and protrusions on the substrate.

[0195] Specifically, for example, the projection position of the projection image of the mask 21 is acquired by the beam image detection camera 70, and correction is made based on this projection position information to optimize the projection magnification by the third optical function unit 30, and the sweep speed during sweep irradiation is also optimized based on the above information. This makes it possible to arbitrarily change the vertical and horizontal magnifications of the substrate 80 relative to the image of the mask 21 within a certain range, and to apply an optimal substrate processing shape.

[0196] [Processing method] The processing method of the first aspect of the present invention is a method of performing the above-described superimposed irradiation using the processing apparatus 100 of the first aspect. Therefore, according to the processing method of the first aspect of the present invention, it is possible to accurately perform fine uneven processing over the entire processing area of ​​the substrate. Furthermore, it is possible to perform irradiation at a high energy density, and to perform high-speed, deep VIA processing and / or trench processing.

[0197] The processing method of the present invention is not limited to a method using the processing apparatus 100 of the first embodiment.

[0198] For example, the processing method of the second aspect of the present invention is a processing method for forming fine irregularities on the surface of a substrate by ablation processing using the irradiation energy of a laser beam, in which a rectangularly shaped laser beam is passed through a mask to irradiate the substrate with the laser beam so that the substrate irradiation area is smaller than the area to be processed on the substrate, and during the processing operation on the substrate, the surface irregularities of the area to be processed on the substrate are processed while overlapping a portion of the substrate irradiation area.

[0199] In this processing method, the laser beam is irradiated onto the substrate so that the substrate irradiation area is smaller than the processing area of ​​the substrate, and the surface unevenness processing of the processing area of ​​the substrate is performed while overlapping a portion of the substrate irradiation area, i.e., overlapping irradiation is performed, so it is possible to accurately perform almost uniform unevenness processing over the processing area of ​​the substrate. Therefore, with this type of processing device, it is possible to accurately perform fine unevenness processing over the processing area of ​​the substrate.

[0200] In the processing method according to the second aspect of the present invention, the use of an excimer laser enables more precise processing of irregularities.

[0201] Alternatively, a processing method according to a third aspect of the present invention is a method of performing synchronous sweep irradiation while fixing the irradiation position of the laser beam described above using the processing apparatus 100 according to the second aspect. Therefore, according to the processing method according to the third aspect of the present invention, it is possible to accurately process fine irregularities across the entire processing area of ​​the substrate. Furthermore, according to the processing method according to the third aspect, processing can be performed with higher accuracy than when scanning the laser beam. Furthermore, with this processing method, a large-area mask can be used as the mask 21, and by using the large-area mask in combination with the third optical function unit 30 described above, processing can be performed with a higher energy density.

[0202] It is particularly preferable to perform both the superimposed irradiation and the synchronous sweep irradiation while the irradiation position of the laser beam is fixed during the processing operation on the substrate.

[0203] In the processing method of the first or third aspect of the present invention, it is preferable to use a processing apparatus 100 that satisfies one or more of the optional conditions described above.

[0204] In addition, in the processing method of the first or third aspect of the present invention, in the sweep irradiation in at least one direction, it is preferable to sweep the mask 21 and the substrate stage 40 non-stop while irradiating the mask 21 and the substrate stage 40 with pulsed laser beams 2 or 4, respectively.

[0205] By performing such a sweep, it is possible to significantly reduce the sweep time compared to the step-and-repeat operation in which running and stopping are repeated, for the reasons explained above.

[0206] In the processing method according to the first or third aspect of the present invention, it is preferable to repeat the sweep irradiation a plurality of times for each processing region 81 of the substrate 80.

[0207] As mentioned above, although high precision is required for the processing of recesses and protrusions on a substrate, there is also a demand for high aspect ratio processing, that is, for the depth to be increased.

[0208] However, the depth that can be processed in one sweep (1 pass) is limited, and particularly in the processing by the non-stop sweep, it is not possible to irradiate the processing area multiple times in one pass.

[0209] Therefore, by performing laser pulse irradiation while sweeping and performing this multiple times for each processing region 81 of the substrate 80, processing can be performed to the desired depth, and high-speed processing can be performed.

[0210] In addition, between each sweep operation (first sweep, second sweep, etc.), by shifting the substrate irradiation area 90 and performing irradiation with a shift for each sweep, as explained with reference to Figures 3 and 4, for example, the processing depth is averaged, and processing of a uniform depth can be performed.

[0211] In the processing method of the first or third aspect, it is preferable that the method further includes reading the characteristic portions of the substrate 80 and the characteristic portions of the mask 21, and using an alignment mechanism to align the relative positions of the substrate 80 and the mask 21 based on the positional information of the characteristic portions of the substrate 80 and the characteristic portions of the mask 21.

[0212] The features of the substrate 80 can be read, for example, by the substrate alignment camera 60. The features of the mask 21 can be read, for example, by the mask alignment camera 23.

[0213] By aligning the position of the mask 21 with the position of the substrate 80 using an alignment mechanism based on the information obtained by the alignment cameras 23 and 60, it is possible to perform uneven processing by projecting the mask pattern onto the exact position on the surface of the substrate 80.

[0214] In this case, it is preferable to further include correcting the processed shape of the substrate 80 with respect to the pattern of the mask 21 based on information from the alignment mechanism.

[0215] This processing method enables more accurate processing of concaves and convexes on the substrate. Such correction can be performed by combining, for example, the third optical function unit 30, the beam image detection camera 70, a sweeping mechanism for the mask 21, and a sweeping mechanism for the substrate stage 80.

[0216] [Substrate manufacturing method] In the substrate manufacturing method of the present invention, the substrate is processed by the processing method of the present invention.

[0217] With this type of substrate manufacturing method, it is possible to perform multiple irradiations with uniform processing depths in the substrate irradiation area within the substrate corresponding to the mask irradiation area, which is a portion of the effective area of ​​the mask, and therefore it is possible to precisely perform roughly uniform uneven processing over the entire processing area of ​​the substrate. Therefore, with this type of substrate manufacturing method, it is possible to manufacture a substrate on which fine uneven processing is precisely formed over the entire processing area of ​​the substrate.

[0218] Furthermore, such a substrate manufacturing method does not require the use of high laser energy, and can be constructed inexpensively without using expensive laser light sources or optical components. In addition, it is possible to suppress deterioration of accuracy due to thermal drift of the laser beam, and it is possible to manufacture substrates that have been processed with high precision.

[0219] In particular, in the substrate manufacturing method using the processing method of the first aspect, the overlapping irradiation is performed during the substrate processing operation, so that high-speed and deep VIA processing and / or trench processing can be performed. In addition, the substrate irradiation area per shot can be made small, so high-density irradiation becomes possible.

[0220] Furthermore, in the substrate manufacturing method using the processing method of the third aspect, the synchronous sweep irradiation is performed with the laser beam irradiation position fixed during the substrate processing operation, so processing can be performed with higher precision than in the case of scanning the laser beam. Furthermore, with this processing method, a large-area mask can be used, so processing can be performed with a higher energy density.

[0221] The method for manufacturing a substrate of the present invention can be particularly advantageously applied to the manufacture of semiconductor packages.

[0222] The present invention is not limited to the above-described embodiments. The above-described embodiments are merely examples, and anything that has substantially the same configuration as the technical idea described in the claims of the present invention and that exhibits similar effects is included within the technical scope of the present invention.

Claims

1. A processing device that forms fine irregularities on the surface of a substrate by ablation processing using irradiation energy of a laser beam, a first optical function unit including a laser light source that irradiates the laser beam in a pulsed manner and a shaping optical system that shapes the irradiation shape of the laser beam from the laser light source into a rectangular shape; a second optical function unit including a mask having an effective area with a pattern corresponding to a processing area of ​​the substrate; a substrate stage for holding the substrate; Including, the mask includes a mask irradiation area that is irradiated with the laser beam that has passed through the first optical function portion, the mask irradiation area being a part of the effective area of ​​the mask; the substrate includes a substrate illumination area onto which the pattern is projected by the laser beam through the mask; the substrate irradiation area is smaller than the processing area of ​​the substrate; During a processing operation on the substrate, sweep irradiation is performed a plurality of times, in which the mask and the substrate stage are swept in a fixed direction along a fixed sweep axis while overlapping a portion of the substrate irradiation area, to process the surface of the processing area of ​​the substrate into irregularities, the plurality of sweep irradiations include sweep irradiations that are shifted in a direction perpendicular to the constant sweep axis so as to overlap with a portion of a region previously subjected to sweep irradiation, a length of the substrate irradiation area in the direction of the constant sweep axis is shorter than a length of the processed region of the substrate in the direction of the constant sweep axis; A processing apparatus in which the length of the substrate irradiation area in a direction perpendicular to the constant sweep axis is shorter than the length of the processed region of the substrate in the direction perpendicular to the constant sweep axis.

2. the mask and the substrate stage are configured to maintain a relative corresponding positional relationship by moving synchronously in a plane direction substantially perpendicular to the direction in which the laser beam is irradiated, 2. The processing apparatus according to claim 1, wherein, during processing of the substrate, the mask and the substrate stage are operated in synchronization with each other while the irradiation position of the laser beam is fixed, and the mask and the substrate stage are swept and irradiated along the fixed sweep axis while overlapping a portion of the substrate irradiation area, thereby performing surface unevenness processing of the processed area of ​​the substrate.

3. 3. The processing apparatus according to claim 1, wherein the laser beam is an excimer laser.

4. 4. The processing apparatus according to claim 1, further comprising a mask stage that holds the mask and sweeps the mask.

5. 5. The processing apparatus according to claim 1, further comprising a third optical function section provided with a reduction projection optical system between the second optical function section and the substrate stage.

6. The processing device according to any one of claims 1 to 5, wherein the shaping optical system is an optical system that includes a plurality of cylindrical lenses and shapes the laser beam from the laser light source into a laser beam whose irradiation shape is rectangular and top-hat shaped.

7. The processing device according to any one of claims 1 to 6, wherein the second optical function unit further shapes the irradiation shape of the laser beam that has passed through the first optical function unit through the mask.

8. The processing device according to any one of claims 1 to 7, wherein in the sweep irradiation in at least one direction, the mask and the substrate stage are non-stop swept while the laser beam is pulse-irradiated onto the mask and the substrate stage.

9. 9. The processing apparatus according to claim 1, wherein the mask is installed in a direction substantially perpendicular to a horizontal surface on which the processing apparatus is installed.

10. A processing method for forming fine irregularities on a surface of a substrate by ablation processing using irradiation energy of a laser beam, comprising: Preparing a processing device including a first optical function unit having a laser light source and a shaping optical system, a second optical function unit having a mask including an effective area having a pattern corresponding to a processing area of ​​the substrate, and a substrate stage that holds the substrate; In the first optical function unit, the laser beam is irradiated in a pulsed manner from the laser light source to the shaping optical system, and the irradiation shape of the laser beam is shaped into a rectangular shape; In the second optical function unit, the laser beam that has passed through the first optical function unit is irradiated onto a mask irradiation area, which is a part of the effective area of ​​the mask; irradiating a substrate illumination area of ​​the substrate with the laser beam that has passed through the mask, thereby projecting the pattern onto the substrate illumination area; Including, The substrate irradiation area is set to be smaller than the processing area of ​​the substrate; During a processing operation on the substrate, sweep irradiation is performed a plurality of times in which a portion of the substrate irradiation area is overlapped while sweeping in a fixed direction along a fixed sweep axis, and the mask and the substrate stage are swept and irradiated, thereby processing the surface of the processing area of ​​the substrate into irregularities; the plurality of sweep irradiations include sweep irradiations that are shifted in a direction perpendicular to the constant sweep axis so as to overlap with a portion of a region previously subjected to sweep irradiation, A length of the substrate irradiation area in the direction of the constant sweep axis is shorter than a length of the processed region of the substrate in the direction of the constant sweep axis; A processing method in which the length of the substrate irradiation area in a direction perpendicular to the constant sweep axis is shorter than the length of the processed region of the substrate in the direction perpendicular to the constant sweep axis.

11. A processing method for forming fine irregularities on a surface of a substrate by ablation processing using irradiation energy of a laser beam, comprising: By passing the rectangular laser beam through a mask, the laser beam is irradiated onto the substrate so that the substrate irradiation area is smaller than the processed region of the substrate; During the processing operation on the substrate, sweep irradiation is performed multiple times in a fixed direction along a fixed sweep axis while overlapping a portion of the substrate irradiation area, thereby processing the surface of the processing area of ​​the substrate into irregularities; the plurality of sweep irradiations include sweep irradiations that are shifted in a direction perpendicular to the constant sweep axis so as to overlap with a portion of a region previously subjected to sweep irradiation, A length of the substrate irradiation area in the direction of the constant sweep axis is shorter than a length of the processed region of the substrate in the direction of the constant sweep axis; A processing method in which the length of the substrate irradiation area in a direction perpendicular to the constant sweep axis is shorter than the length of the processed region of the substrate in the direction perpendicular to the constant sweep axis.

12. the mask and the substrate stage are synchronously moved in a plane direction substantially perpendicular to the direction in which the laser beam is irradiated, thereby maintaining a relative corresponding positional relationship; 11. The processing method according to claim 10, wherein, during processing of the substrate, the mask and the substrate stage are operated in synchronization with each other while the irradiation position of the laser beam is fixed, and the mask and the substrate stage are swept and irradiated along the fixed sweep axis while overlapping a portion of the substrate irradiation area, thereby performing surface unevenness processing of the processed area of ​​the substrate.

13. 13. The processing method according to claim 10, wherein an excimer laser is used as the laser beam.

14. The processing method according to claim 10 or 12, wherein the processing device further includes a third optical function unit equipped with a reduction projection optical system between the second optical function unit and the substrate stage.

15. The processing method according to claim 10, 12 or 14, wherein the second optical function unit further shapes the irradiation shape of the laser beam that has passed through the first optical function unit through the mask.

16. A processing method described in any one of claims 10, 12, 14 and 15, wherein in the sweep irradiation in at least one direction, the mask and the substrate stage are swept non-stop while the laser beam is pulse-irradiated onto the mask and the substrate stage.

17. A processing method for forming fine irregularities on a surface of a substrate by ablation processing using irradiation energy of a laser beam, comprising: By passing the rectangular laser beam through a mask, the laser beam is irradiated onto the substrate so that the substrate irradiation area is smaller than the processed region of the substrate; During the processing operation on the substrate, the laser beam is irradiated in a sweeping manner along a fixed sweep axis while the irradiation position of the laser beam is fixed, thereby performing surface roughness processing on the processing area of ​​the substrate; A length of the substrate irradiation area in the direction of the constant sweep axis is shorter than a length of the processed region of the substrate in the direction of the constant sweep axis; A processing method in which the length of the substrate irradiation area in a direction perpendicular to the constant sweep axis is shorter than the length of the processed region of the substrate in the direction perpendicular to the constant sweep axis.

18. The processing method according to claim 17 , wherein the sweep irradiation is performed while overlapping a portion of the substrate irradiation area.

19. A method for manufacturing a substrate having fine irregularities formed thereon, comprising ablation processing using irradiation energy of a laser beam on a surface of a substrate by the processing method according to any one of claims 10 to 18, thereby forming fine irregularities.

20. The method for manufacturing a substrate according to claim 19, wherein the substrate is a substrate for a semiconductor package.

21. A substrate for a semiconductor package is manufactured by the method for manufacturing a substrate according to claim 20, A method for manufacturing a semiconductor package, which uses the semiconductor package substrate to manufacture a semiconductor package.

22. A method for manufacturing multilayer wiring using a build-up film, a step of performing ablation processing on the surface of the buildup film by using irradiation energy of a laser beam by the processing method according to any one of claims 10 to 18, thereby forming a trench; forming a metal layer in the trench to provide wiring.

23. A method for manufacturing multilayer wiring using a build-up film, a step of performing ablation processing on the surface of the buildup film by using irradiation energy of a laser beam by the processing method according to any one of claims 10 to 18, thereby forming through holes; A method of manufacturing wiring, comprising a step of forming a metal layer in the through hole to provide a via.

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