Substrate, light-emitting device, method of manufacturing substrate, and method of manufacturing light-emitting device

Abstract

To provide a substrate capable of reducing a difference of thermal expansion coefficients between a conductive member and a ceramic member, and a light-emitting device comprising the substrate.SOLUTION: A substrate comprises a conductive member, which includes first to third regions, and a ceramic member. The first region contains copper and diamond. The second region contains copper as a main component. The third region is disposed between the first and second regions and the ceramic member and contains at least one selected from the group consisting of titanium, zirconium, niobium, cerium and magnesium, and copper. The diamond disposed in the vicinity of the third region in the first region is in contact with the third region. On a cross section, the first region includes a first portion and a second portion which is positioned between the first portion and the second region in a first direction, and an area occupied by diamond per unit area in the second portion is smaller than an area occupied by diamond per unit area in the first portion.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present disclosure relates to a substrate, a light-emitting device, a method for manufacturing a substrate, and a method for manufacturing a light-emitting device. [Background technology]

[0002] A substrate includes a conductive member containing copper and a ceramic member, and it is desirable that the difference in thermal expansion coefficient between the conductive member and the ceramic member of the substrate is small. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Laid-Open No. 2008-004760 Summary of the Invention [Problem to be solved by the invention]

[0004] An object of an embodiment of the present disclosure is to provide a substrate that can further reduce the difference in thermal expansion coefficient between a conductive member and a ceramic member, and a light-emitting device including the substrate. [Means for solving the problem]

[0005] The substrate according to the embodiment includes a conductive member including a first region, a second region, and a third region, and a ceramic member. The first region includes copper and diamond. The second region is disposed on the first region and is primarily composed of copper. The ceramic member is disposed away from the first region and the second region in a second direction perpendicular to a first direction from the first region to the second region. The third region is disposed between the first region and the ceramic member and between the second region and the ceramic member, and includes copper and at least one selected from the group consisting of titanium, hafnium, zirconium, niobium, cerium, and magnesium. The diamond disposed near the third region in the first region contacts the third region. In a cross section parallel to the first direction, the first region includes a first portion and a second portion located between the first portion and the second region in the first direction, and the area occupied by the diamond per unit area in the second portion is smaller than the area occupied by the diamond per unit area in the first portion.

[0006] A method for manufacturing a substrate according to an embodiment includes the steps of: placing a first raw material containing copper powder and diamond inside a jig having an upper surface and a recess recessed from the upper surface; placing a second raw material containing copper powder on the first raw material and the upper surface of the jig; and sintering the first raw material and the second raw material to prepare a sintered body having a plurality of protrusions; placing ceramic members on the side surfaces of each of the plurality of protrusions of the sintered body removed from the jig via an active metal brazing material; and firing the active metal brazing material to join the ceramic members and the sintered body. [Effects of the Invention]

[0007] According to the embodiments of the present disclosure, it is possible to provide a substrate that can further reduce the difference in thermal expansion coefficient between a conductive member and a ceramic member, and a light emitting device including the substrate. [Brief explanation of the drawings]

[0008] [Figure 1] FIG. 2 is a cross-sectional view showing a substrate according to an embodiment. [Figure 2] FIG. 2 is a top view showing a substrate according to the embodiment. [Figure 3] FIG. 2 is a bottom view showing the substrate according to the embodiment. [Figure 4A] FIG. 2 is an enlarged cross-sectional view of the vicinity of the boundary between the first region and the third region. [Figure 4B] FIG. 1 is a cross-sectional view showing an example of a diamond. [Figure 4C] FIG. 2 is a cross-sectional view showing an example of a composite particle. [Figure 4D] FIG. 2 is a cross-sectional view showing an example of a composite particle. [Figure 5] FIG. 2 is an enlarged cross-sectional view of a first region and a second region. [Figure 6] FIG. 2 is an enlarged cross-sectional view of a ceramic member. [Figure 7] 1 is a cross-sectional view showing a light emitting device according to an embodiment. [Figure 8A] 5A to 5C are schematic diagrams illustrating a manufacturing process of a substrate according to an embodiment. [Figure 8B] 5A to 5C are schematic diagrams illustrating a manufacturing process of a substrate according to an embodiment. [Figure 8C] 5A to 5C are schematic diagrams illustrating a manufacturing process of a substrate according to an embodiment. [Figure 8D] 5A to 5C are schematic diagrams illustrating a manufacturing process of a substrate according to an embodiment. [Figure 9A] 5A to 5C are schematic diagrams illustrating a manufacturing process of a substrate according to an embodiment. [Figure 9B] 5A to 5C are schematic diagrams illustrating a manufacturing process of a substrate according to an embodiment. [Figure 9C] 5A to 5C are schematic diagrams illustrating a manufacturing process of a substrate according to an embodiment. [Figure 10A] 5A to 5C are schematic diagrams illustrating a manufacturing process of a substrate according to an embodiment. [Figure 10B] 5A to 5C are schematic diagrams illustrating a manufacturing process of a substrate according to an embodiment. [Figure 10C] 5A to 5C are schematic diagrams illustrating a manufacturing process of a substrate according to an embodiment. [Figure 11A] 5A to 5C are schematic diagrams illustrating a manufacturing process of a substrate according to an embodiment. [Figure 11B] 5A to 5C are schematic diagrams illustrating a manufacturing process of a substrate according to an embodiment. [Figure 11C] 5A to 5C are schematic diagrams illustrating a manufacturing process of a substrate according to an embodiment. [Figure 12A] 5A to 5C are schematic diagrams illustrating a manufacturing process of the light emitting device according to the embodiment. [Figure 12B] 5A to 5C are schematic diagrams illustrating a manufacturing process of the light emitting device according to the embodiment. [Figure 12C] 5A to 5C are schematic diagrams illustrating a manufacturing process of the light emitting device according to the embodiment. [Figure 12D] 5A to 5C are schematic diagrams illustrating a manufacturing process of the light emitting device according to the embodiment. [Figure 13A] FIG. 10 is a cross-sectional view showing a substrate according to a modified example of the embodiment. [Figure 13B] FIG. 10 is a cross-sectional view showing a substrate according to a modified example of the embodiment. [Figure 13C] FIG. 10 is a cross-sectional view showing a substrate according to a modified example of the embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0009] Hereinafter, each embodiment of the present disclosure will be described with reference to the drawings. The drawings are schematic or conceptual, and the relationship between the thickness and width of each part, the size ratio between parts, etc., are not necessarily the same as those in reality. Furthermore, even when the same part is shown, the dimensions or ratios may be different depending on the drawing. In this specification and each drawing, elements similar to those already described are assigned the same reference numerals, and detailed description will be omitted as appropriate. As a cross-sectional view, an end view showing only the cut surface may be used.

[0010] Fig. 1 is a cross-sectional view showing a substrate according to an embodiment. Fig. 2 is a top view showing a substrate according to an embodiment. Fig. 3 is a bottom view showing a substrate according to an embodiment. Fig. 1 corresponds to a cross-sectional view taken along line II in Figs. 2 and 3.

[0011] 1 to 3, a substrate 1 according to the embodiment includes a conductive member 10 and a ceramic member 20. As shown in FIG. 1, the conductive member 10 includes a first region 11, a second region 12, and a third region 13.

[0012] Here, an XYZ Cartesian coordinate system is used to explain the embodiments. The direction from the first region 11 to the second region 12 is defined as the Z direction (first direction). Two directions that are perpendicular to the Z direction and orthogonal to each other are defined as the X direction (second direction) and the Y direction. For the sake of explanation, the direction from the first region 11 to the second region 12 is referred to as "up," and the opposite direction is referred to as "down." These directions are based on the relative positional relationship between the first region 11 and the second region 12 and are unrelated to the direction of gravity. In addition, the term "planar view" used in the embodiments refers to viewing an object from above. In this specification, in addition to parts that can be directly viewed from above, parts that cannot be directly viewed from above may also be described as being seen through the view.

[0013] The first region 11 contains copper and diamond. The second region 12 is disposed on the first region 11. The second region 12 contains copper as a main component. Note that the term "main component" refers to a component that accounts for 50% or more of the total content.

[0014] The ceramic member 20 is disposed apart from the first region 11 and the second region 12 in the X direction. The ceramic member 20 has insulating properties. The ceramic member 20 is made of a sintered body such as silicon nitride, aluminum nitride, aluminum oxide, or zirconium oxide.

[0015] The third region 13 is disposed between the first region 11 and the ceramic member 20 and between the second region 12 and the ceramic member 20 in the X direction. The third region 13 is in contact with the first region 11, the second region 12, and the ceramic member 20. Therefore, in the example shown in FIG. 1 , the conductive member 10 and the ceramic member 20 are in contact with each other. As shown in FIG. 1 , the third region 13 is further disposed below the first region 11. The third region 13 is further disposed on a portion of the ceramic member 20.

[0016] The third region 13 contains copper and at least one selected from the group consisting of titanium, hafnium, zirconium, niobium, cerium, and magnesium. Titanium, hafnium, zirconium, niobium, cerium, and magnesium are so-called active metals. The third region 13 contains copper as a main component and an active metal. The third region 13 may further contain silver. When the third region 13 contains silver, the boundary between the first region 11 and the third region 13 becomes easier to distinguish. Additionally, the third region 13 may further contain tin, indium, etc.

[0017] 1 and 2, the second region 12, the third region 13, and the ceramic member 20 are exposed on the upper surface of the substrate 1. As shown in FIGS. 1 and 3, the third region 13 and the ceramic member 20 are exposed on the lower surface of the substrate 1.

[0018] 1, the thickness of the first region 11 in the Z direction is greater than the thickness of the second region 12 in the Z direction. By making the proportion of the first region 11 greater than the proportion of the second region 12 in the conductive member 10, the thermal expansion coefficient of the conductive member 10 can be further reduced. More preferably, the thickness of the first region 11 in the Z direction is 1.5 to 50 times the thickness of the second region 12 in the Z direction.

[0019] The dimensional relationship between the first region 11, the second region 12, and the ceramic member 20 can be designed as appropriate. For example, the length of the first region 11 in the X direction and the length of the second region 12 in the X direction are longer than the length of the ceramic member 20 in the X direction. This can further improve the heat dissipation performance of the substrate 1.

[0020] 1 to 3, the substrate 1 includes a plurality of conductive members 10. The ceramic member 20 is disposed between two conductive members 10 in the X direction. In detail, two conductive members 10 each having a rectangular shape in a plan view sandwich one ceramic member 20 also having a rectangular shape in a plan view, and the conductive member 10 and the ceramic member 20 are disposed adjacent to each other.

[0021] Fig. 4A is an enlarged cross-sectional view of the vicinity of the boundary between the first region and the third region. Fig. 4B is a cross-sectional view showing an example of a diamond. Fig. 4C is a cross-sectional view showing an example of a composite particle. Fig. 4D is a cross-sectional view showing an example of a composite particle.

[0022] Diamond particles D are dispersed in a matrix containing copper as a main component in the first region 11. As shown in FIG. 4A, the diamond D arranged in the first region 11 near the third region 13 is in contact with the third region 13.

[0023] The diamond D used in this embodiment may be an artificially produced industrial diamond. Diamond D has a higher hardness and a lower thermal expansion coefficient than the metal used for the substrate. Therefore, by placing diamond D within the conductive member 10, it is possible to reduce the occurrence of heat-induced contraction and cracks in the conductive member 10. Furthermore, since diamond D has a higher thermal conductivity than metal and is isotropic in the direction of heat conduction, placing diamond D within the conductive member 10 can improve the heat dissipation performance of the substrate 1. The shape of diamond D may be, for example, a sphere or a polyhedron, or a polyhedron close to a sphere.

[0024] Here, the structure of diamond D will be described. FIGS. 4B to 4D are cross-sectional views showing examples of diamond D. In the example shown in FIG. 4B, diamond D1 is a diamond particle 41. The shape of the diamond particle 41 is, for example, a polyhedron with cleavage planes. Diamond D may be a composite particle having diamond particles 41 and a plating layer covering the diamond particles 41. For example, as shown in FIG. 4C, diamond D may be a composite particle D2 having diamond particles 41 and a nickel plating layer 42 covering the diamond particles 41. As shown in FIG. 4D, diamond D may be a composite particle D3 having diamond particles 41, a nickel plating layer 42 covering the diamond particles 41, and a copper plating layer 43 covering the nickel plating layer. In particular, when the composite particle contains diamond particles, excellent heat conductivity can be obtained. Furthermore, when the diamond particles 41 are coated with a metal film such as a plating layer, adhesion between the diamond D and the metal contained in the conductive member 10 is improved. In this embodiment, the diamond D1, composite particle D2, and composite particle D3 each made of the diamond particle 41 are collectively referred to as diamond D.

[0025] The grain size of each diamond D contained in the first region 11 is 20 μm or more and 130 μm or less. In this specification, "grain size" refers to the diameter of the smallest sphere circumscribing the diamond D. The shape of the diamond D is not particularly limited, but may be, for example, a hexahedron or octahedron. If the grain size of the diamond D is less than 20 μm, the thermal conductivity of the diamond D is low, and the thermal conductivity of the first region 11 may be reduced. If the grain size of the diamond D exceeds 130 μm, the area of ​​the diamond D in contact with the third region 13 near the boundary between the first region 11 and the third region 13 becomes smaller, assuming a constant density of the diamond D. In other words, by setting the grain size of the diamond D to 20 μm or more and 130 μm or less, the area of ​​copper in the first region 11 near the boundary between the first region 11 and the third region 13 is reduced. Therefore, the amount of voids generated by copper dissolving from the first region 11 to the third region 13 can be reduced. Therefore, the particle size of diamond D is preferably 20 μm or more and 130 μm or less, and more preferably more than 20 μm and 80 μm or less.

[0026] The particle size of the diamond D can be determined by image analysis of a cross-sectional photograph or by sorting using a sieve. For example, in scanning electron microscope energy dispersive X-ray spectroscopy (SEM-EDX, hereinafter sometimes referred to as EDX), the diamond particles 41 appear darker than copper. The particle size of the diamond D can be obtained by extracting the black region from the image and measuring its dimensions. Alternatively, the diamond D can be extracted by cutting out the first region 11 from the conductive member 10 and dissolving the copper contained in the first region 11 in an acidic solution. The extracted diamond D can be observed using, for example, an optical microscope, a SEM (scanning electron microscope), or SEM-EDX, and its dimensions can be measured to obtain the particle size of the diamond D. The extracted diamond D can also be sieved using a mesh. The diamond D is sieved sequentially through meshes, from fine to coarse. The particle size of the diamond D can be estimated from the size of the openings when the diamond D passes through the mesh.

[0027] The content of diamond D in the first region 11 is not particularly limited. Preferably, in a cross section parallel to the Z direction, diamond D occupies 10% to 50% of the area of ​​the first region 11. If the area occupied by diamond D in the cross section is less than 10%, the effect of diamond D in reducing the thermal expansion coefficient of the first region 11 may be insufficient. If the area occupied by diamond D exceeds 50%, the conductivity of the first region 11 may be reduced by diamond D. Therefore, the area occupied by diamond D in the cross section is preferably 10% to 50% of the area of ​​the first region 11, and more preferably 25% to 45%.

[0028] FIG. 5 is an enlarged cross-sectional view of the first region and the second region shown in FIG. 5, the first region 11 includes a first portion 11a and a second portion 11b. The second portion 11b is located between the first portion 11a and the second region 12 in the Z direction. When observing a cross section of the conductive member 10 parallel to the Z direction, the area occupied by the diamonds D per unit area in the second portion 11b is smaller than the area occupied by the diamonds D per unit area in the first portion 11a.

[0029] If it is confirmed from the cross-sectional observation that the area occupied by diamond D per unit area in the second portion 11b is smaller than the area occupied by diamond D per unit area in the first portion 11a, it is estimated that the volume occupied by diamond D per unit volume in the second portion 11b is smaller than the volume occupied by diamond D per unit volume in the first portion 11a in the first region 11 of the conductive member 10. If the diamond D is a composite particle having a plating layer on its surface, the thickness of the plating layer is very small compared to the volume of the diamond particle 41, so the thickness of the plating layer will be ignored.

[0030] Furthermore, in the first region 11, the portions other than the diamond D are mainly made of copper. Therefore, when the area occupied by the diamond D per unit area in the second portion 11b is smaller than the area occupied by the diamond D per unit area in the first portion 11a, the area occupied by copper per unit area in the second portion 11b is larger than the area occupied by copper per unit area in the first portion 11a. Furthermore, when it is confirmed from the cross-sectional observation results that the area occupied by copper per unit area in the second portion 11b is larger than the area occupied by copper per unit area in the first portion 11a, it is estimated that in the first region 11 of the conductive member 10, the volume occupied by copper per unit volume in the second portion 11b is larger than the volume occupied by copper per unit volume in the first portion 11a.

[0031] In this embodiment, there is a difference in density of diamond D between the first portion 11a and the second portion 11b. In this way, by providing a portion with a low density of diamond D, such as the second portion 11b, between the first portion 11a and the second region 12, it is possible to prevent diamond D from penetrating into the second region 12. By preventing diamond D from penetrating into the second region 12, it is possible to reduce the unevenness of the upper surface of the second region 12, and as will be described later, this improves the accuracy of placement when placing the light emitting element 33 on the second region 12.

[0032] In the present embodiment, there may be cases where there are no clear boundaries that allow the first region 11, the second region 12, and the third region 13 to be visually distinguished from one another. In such cases, the first region 11, the second region 12, and the third region 13 are distinguished as follows.

[0033] In the cross section of the conductive member 10, the first region 11 and the second region 12 are distinguished by the presence or absence of diamond D. That is, when the cross section of the conductive member 10 is observed, the region where diamond D is present is the first region 11. The region located on the first region 11 and where diamond D is not present is the second region 12. Similarly, in the cross section of the conductive member 10, the first region 11 and the third region 13 are distinguished by the presence or absence of diamond D. That is, when the cross section of the conductive member 10 is observed, the region where diamond D is present is the first region 11. The region located on the X-direction side of the first region 11 and where diamond D is not present is the third region 13. Furthermore, the first region 11 and the third region 13 may be distinguished based on the concentration of active metal.

[0034] For example, SEM-EDX is used to observe the cross section of the conductive member 10. First, the substrate 1 is cut along the Z direction so as to include the first region 11 and the second region of the conductive member 10. The cut surface of the substrate 1 is polished, and the polished surface is observed with an SEM.

[0035] To distinguish between the first region 11 and the second region 12, diamond D is identified from an image obtained by SEM. In SEM, the parts containing heavier elements appear whiter. When comparing copper and the carbon contained in diamond, copper is heavier. Therefore, in the SEM observation, diamond appears darker than copper. The first region 11 and the second region 12 are distinguished based on the presence or absence of black areas corresponding to diamond.

[0036] When distinguishing between the first region 11 and the third region 13, the rough boundary between the first region 11 and the third region 13 is determined based on the distribution of diamond D in the X direction. The vicinity of the boundary is observed, and an elemental mapping of the active metal is obtained by EDX. Near the boundary between the first region 11 and the third region 13, there is a change in the concentration of the active metal in the X direction. The first region 11 and the third region 13 are distinguished from the concentration of the active metal obtained by elemental mapping. In the first region 11, the EDX spectrum of the active metal is not observed, and the active metal is not detected.

[0037] In the substrate 1 according to the embodiment, when the first region 11 and the third region 13 are distinguished by the above-mentioned method, the diamond D in the first region 11 near the third region 13 is in contact with the third region 13. That is, a part of the diamond D is in contact with the region where the EDX spectrum of the active metal can be observed.

[0038] Furthermore, the first portion 11a and the second portion 11b are distinguished from the area occupied by diamond or copper in the first region 11. As described above, when the first region 11 is observed using an SEM, copper and diamond have different colors. By image analysis of the observed photograph, the area of ​​the white portion is measured as the area of ​​copper, and the area of ​​the black portion is measured as the area of ​​diamond. In the first region 11, multiple sections are set in the Z direction, and the areas occupied by copper and diamond per unit area are calculated for each section. The section in which the area occupied by diamond per unit area is relatively large is distinguished as the first portion 11a. The section in which the area occupied by diamond per unit area is relatively small is distinguished as the second portion 11b.

[0039] FIG. 6 is an enlarged cross-sectional view of the ceramic member shown in FIG. 1. For example, as shown in FIG. 6, the width (length in the X direction) of the upper portion 21 of the ceramic member 20 is shorter than the width (length in the X direction) of the lower portion 22 of the ceramic member 20. The third region 13 is disposed on the lower portion 22 in a portion other than the upper portion 21. The thickness (length in the Z direction) of the upper portion 21 is smaller than the thickness (length in the Z direction) of the lower portion 22. In this case, the third region 13 can be disposed on the lower portion 22 in a portion other than the upper portion 21. This allows the third region 13 to occupy a larger proportion of the upper surface of the substrate 1. Because the third region 13 contains metal, the thermal conductivity of the third region 13 is higher than the thermal conductivity of the ceramic member 20. This allows the heat dissipation of the substrate 1 to be further improved. However, the specific shape of the ceramic member 20 is not limited thereto.

[0040] 7 is a cross-sectional view showing a light emitting device according to an embodiment. The substrate 1 according to the embodiment is suitable for use in light emitting devices. As shown in FIG. 7, the light emitting device 2 includes the substrate 1, a metal layer 30, a metal layer 31, a bonding member 32, a light emitting element 33, a fluorescent member 34, and a covering member 35.

[0041] The metal layer 30 is disposed on the upper surface of the second region 12 and the upper surface of the third region 13. The metal layer 31 is disposed on the lower surface of the third region 13. The metal layer 30 and the metal layer 31 include thin films of nickel, palladium, gold, or the like.

[0042] The bonding member 32 is disposed on the metal layer 30. In the example shown in Fig. 1, the bonding member 32 is disposed at a plurality of locations to bond the substrate 1 and the light-emitting element 33. The bonding member 32 is, for example, solder. By disposing the metal layer 30 on the upper surface of the ceramic member 20, the wettability of the bonding member 32 is improved.

[0043] In the example shown in FIG. 7, one light emitting device 2 includes one light emitting element 33. The light emitting element 33 has a light emitting surface 36 on its upper surface, and at least a pair of positive and negative element electrodes is provided on the surface opposite to the light emitting surface 36. In the example shown in FIG. 7, the shape of the light emitting surface 36 in a plan view is approximately rectangular. However, the shape of the light emitting surface 36 in a plan view may be approximately circular, approximately elliptical, or may be a polygon such as approximately triangular or approximately hexagonal. The number of light emitting elements 33 included in one light emitting device 2 may be two or more.

[0044] In the example shown in FIG. 7, the light emitting element 33 is disposed on the second region 12 and the ceramic member 20, and is electrically connected to the second region 12. The light emitting element 33 is bonded to the conductive member 10 via the element electrode, the metal layer 30, and the bonding member 32. The light emitting element 33 has various semiconductors such as III-V group compound semiconductors and II-VI group compound semiconductors. The light emitting element 33 may be an LED (Light Emitting Diode) or an LD (Laser Diode). The semiconductor may be In X Al Y Ga 1-X-YIt is preferable to use a nitride-based semiconductor such as InN (0≦X, 0≦Y, X+Y≦1), and InN, AlN, GaN, InGaN, AlGaN, InGaAlN, etc. can also be used. The light-emitting element 33 includes an n-type semiconductor layer, a p-type semiconductor layer, and a light-emitting layer disposed therebetween. The p-type semiconductor layer of the light-emitting element 33 is electrically connected to one of the two conductive members 10, and the n-type semiconductor layer of the light-emitting element 33 is electrically connected to the other of the two conductive members 10. From the viewpoints of luminous efficiency, excitation of phosphors described below, and color mixing relationship with the emission thereof, the emission peak wavelength of the light-emitting element 33 is preferably 400 nm or more and 530 nm or less, more preferably 400 nm or more and 490 nm or less, and even more preferably 440 nm or more and 475 nm or less.

[0045] The fluorescent member 34 is, for example, a substantially rectangular member in a plan view and is provided to cover the upper surface of the light-emitting element 33. The fluorescent member 34 can be formed using an inorganic material such as a translucent resin material, ceramics, or glass. Examples of suitable resin materials include thermosetting resins such as silicone resin, silicone-modified resin, epoxy resin, epoxy-modified resin, and phenolic resin. Silicone resin or its modified resin, which has excellent light resistance and heat resistance, is particularly suitable. The translucency here preferably transmits 60% or more of the light emitted by the light-emitting element 33. The fluorescent member 34 can also be made of a thermoplastic resin such as polycarbonate resin, acrylic resin, methylpentene resin, or polynorbornene resin. The fluorescent member 34 may further include a light-diffusing material or a phosphor that converts the wavelength of at least a portion of the light emitted by the light-emitting element 33. For example, the fluorescent member 34 may be a resin material, ceramics, glass, or the like containing a phosphor, or a sintered body of a phosphor. The fluorescent member 34 may also be a multi-layer member in which a resin layer containing a fluorescent material and a light diffusing material is disposed on the upper or lower surface of a molded body made of resin, ceramic, glass, or the like.

[0046] The phosphor is an yttrium-aluminum-garnet phosphor (e.g., (Y,Gd)3(Al,Ga)5O 12:(Ce), lutetium-aluminum-garnet-based phosphor (e.g., Lu3(Al,Ga)5O 12 :(Ce), terbium-aluminum-garnet-based phosphor (e.g., Tb3(Al,Ga)5O 12 :(Ce), CCA-based phosphor (e.g., Ca 10 (PO4)6Cl2:Eu), SAE-based phosphor (e.g., Sr4Al 14 O 25 :Eu), chlorosilicate-based phosphor (e.g., Ca8MgSi4O 16 Cl2:Eu), silicate-based phosphor (e.g., (Ba,Sr,Ca,Mg)2SiO4:Eu), β-sialon-based phosphor (e.g., (Si,Al)3(O,N)4:Eu) or α-sialon-based phosphor (e.g., Ca(Si,Al) 12 (O,N) 16 :Eu) and other oxynitride-based phosphors, LSN-based phosphor (e.g., (La,Y)3Si6N 11 :Ce), BSESN-based phosphor (e.g., (Ba,Sr)2Si5N8:Eu), SLA-based phosphor (e.g., SrLiAl3N4:Eu), CASN-based phosphor (e.g., CaAlSiN3:Eu) or SCASN-based phosphor (e.g., (Sr,Ca)AlSiN3:Eu) and other nitride-based phosphors, KSF-based phosphor (e.g., K2SiF6:Mn), KSAF-based phosphor (e.g., K2(Si 1-x Al x )F 6-x :Mn where x satisfies 0 < x < 1.) or MGF-based phosphor (e.g., 3.5MgO·0.5MgF2·GeO2:Mn) and other fluoride-based phosphors, quantum dots having a perovskite structure (e.g., (Cs,FA,MA)(Pb,Sn)(F,Cl,Br,I)3 where FA and MA represent formamidinium and methylammonium, respectively.), II-VI group quantum dots (e.g., CdSe), III-V group quantum dots (e.g., InP), or quantum dots having a chalcopyrite structure (e.g., (Ag,Cu)(In,Ga)(S,Se)2) etc. can be used.

[0047] 7, the light-emitting element 33 emits blue light, and the fluorescent member 34 includes a phosphor that absorbs blue light and emits red light, and a phosphor that absorbs blue light and emits green light. Alternatively, the fluorescent member 34 may include a phosphor that absorbs blue light and emits yellow light.

[0048] The covering member 35 is disposed so as to cover the side surfaces of the light-emitting element 33 and the fluorescent member 34. The covering member 35 directly or indirectly covers the side surfaces of the light-emitting element 33 and the fluorescent member 34. The upper surface of the fluorescent member 34 is exposed from the covering member 35 and serves as the light-emitting surface of the light-emitting device 2. The covering member 35 is further disposed between the metal layer 30 and the light-emitting element 33 and between the ceramic member 20 and the light-emitting element 33. The covering member 35 reflects light emitted from the light-emitting element 33 toward the covering member 35. The covering member 35 is integrally formed, for example, from a white resin material. The covering member 35 is preferably composed of a material with high light reflectivity to improve light extraction efficiency. The covering member 35 can be formed from an organic material such as a resin containing a light-reflecting substance such as a white pigment. The covering member 35 may also be a light-reflecting material composed of an inorganic material including, for example, boron nitride or alkali metal silicate. In this case, the covering member 35 may further contain titanium oxide or zirconium oxide.

[0049] Examples of light-reflecting materials include titanium oxide, zinc oxide, magnesium oxide, magnesium carbonate, magnesium hydroxide, calcium carbonate, calcium hydroxide, calcium silicate, magnesium silicate, barium titanate, barium sulfate, aluminum hydroxide, aluminum oxide, zirconium oxide, and silicon oxide. One of these materials can be used alone, or two or more can be used in combination. Among organic materials, resin materials are preferably based on a resin material whose main component is a thermosetting resin, such as epoxy resin, epoxy-modified resin, silicone resin, silicone-modified resin, or phenolic resin. The covering member 35 may be made of a material that is translucent or absorbent to visible light, as needed.

[0050] When the light-emitting device 2 has a plurality of light-emitting elements 33 and a fluorescent member 34 arranged on each light-emitting element 33, the covering member 35 may be arranged between adjacent light-emitting elements 33 and between adjacent fluorescent members 34, and may cover the plurality of light-emitting elements 33 and the plurality of fluorescent members 34 integrally.

[0051] The advantages of the embodiments of the present disclosure will be described.

[0052] When light is emitted from the light emitting device 2, heat is generated in the light emitting element 33. The heat from the light emitting element 33 is transferred to the conductive member 10, the ceramic member 20, and the like. Depending on whether or not heat is generated by the light emitting element 33, the temperatures of the conductive member 10, the ceramic member 20, and the light emitting element 33 change. When the temperature changes, thermal expansion or thermal contraction occurs in each of the conductive member 10, the ceramic member 20, and the light emitting element 33.

[0053] In this embodiment, a first region 11 is provided in the conductive member 10. The first region 11 contains copper and diamond. The thermal expansion coefficient of the first region 11 containing copper and diamond is smaller than the thermal expansion coefficient of the second region 12 containing no diamond. By including the first region 11 in the conductive member 10, the amount of thermal expansion and thermal contraction of the conductive member 10 can be reduced. This reduces the stress generated between the conductive member 10 and the ceramic member 20, and the stress generated between the conductive member 10 and the light-emitting element 33 during thermal expansion or thermal contraction. As a result, the occurrence of damage to the light-emitting element 33 due to temperature rise, malfunction of the light-emitting device 2, etc. can be reduced.

[0054] According to the embodiment, it is possible to provide a substrate 1 including a conductive member 10 having a small difference in thermal expansion coefficient between it and the ceramic member 20 or the light emitting element 33. Furthermore, by using the substrate 1 according to the embodiment in a light emitting device 2, it is possible to provide a light emitting device 2 that is highly reliable against temperature changes.

[0055] 8A to 11C are schematic views showing the manufacturing process of the substrate according to the embodiment.

[0056] The manufacturing process of the substrate according to the embodiment includes the steps of preparing a sintered body having a plurality of protrusions, arranging a ceramic member, and bonding the ceramic member and the sintered body.

[0057] First, the process of preparing a sintered body having a plurality of protrusions will be described. In the process of preparing a sintered body having a plurality of protrusions, a first raw material 55 containing copper powder and diamond is placed inside the recess 52 of a jig 50 having an upper surface 51 and a recess 52 recessed from the upper surface 51. A second raw material 57 containing copper powder is placed on the first raw material 55 and the upper surface 51 of the jig 50, and the first raw material 55 and the second raw material 57 are fired.

[0058] A jig 50 shown in Fig. 8A is used to manufacture the substrate 1. Fig. 8B is an enlarged cross-sectional view of a portion of the jig 50. As shown in Fig. 8B, the jig 50 is a member having an upper surface 51 and a recessed portion 52 recessed from the upper surface 51.

[0059] As shown in FIG. 8C, a release agent 53 is sprayed onto the upper surface 51 of the prepared jig 50 and the inner surface of the recess 52. The release agent 53 contains carbon powder or boron nitride powder. As shown in FIG. 8D, a first raw material 55 is placed inside the recess 52. The first raw material 55 contains, for example, 60 wt% to 85 wt% copper powder and 15 wt% to 40 wt% diamond D. The particle diameter of the diamond D is preferably 20 μm to 130 μm. The first raw material 55 is preferably placed inside the recess 52 so that there are almost no gaps. The upper surface of the release agent 53 placed on the upper surface 51 of the jig 50 and the upper surface of the first raw material 55 placed inside the recess 52 are made flush with each other.

[0060] As shown in FIG. 9A , jig 50 is placed inside cylindrical body 56, and second raw material 57 is placed on the upper surface of release material 53 and the upper surface of first raw material 55. Second raw material 57 contains copper powder. In this embodiment, second raw material 57 does not contain diamond. Second raw material 57 is placed on upper surface 51 and on first raw material 55. FIG. 9B is an enlarged cross-sectional view of a portion of FIG. 9A. As shown in FIG. 9B , weight 58 is placed on second raw material 57, and a pressure of 10 MPa to 50 MPa is applied to first raw material 55 and second raw material 57. At this time, a portion of second raw material 57 penetrates into recess 52. As a result, first raw material 55 and second raw material 57 are placed inside recess 52, but the thickness of first raw material 55 placed inside recess 52 is greater than the thickness of second raw material 57 placed inside recess 52. That is, the proportion of first raw material 55 is greater than the proportion of second raw material 57 inside recess 52.

[0061] The average particle size of the copper powder in the first raw material 55 and the average particle size of the copper powder in the second raw material 57 are preferably 1 μm or more and 8 μm or less. If the average particle size of the copper powder is less than 1 μm, the proportion of the surface area of ​​the copper powder increases. The surface of the copper powder is easily oxidized. Therefore, if the surface of the copper powder is oxidized, the area of ​​the copper oxide also increases, which may reduce sinterability. If the average particle size of the copper powder exceeds 8 μm, the copper powder is too large to densely cover the surface of the diamond D, which may reduce the density and thermal conductivity of the sintered body. Therefore, the average particle size of the copper powder is preferably 1 μm or more and 8 μm or less.

[0062] In this state, the first raw material 55 and the second raw material 57 are sintered while being pressurized at a pressure of 30 MPa to 90 MPa. For example, the sintering temperature is set to 600°C to 750°C. The copper powder contained in the first raw material 55 and the second raw material 57 is sintered, and a sintered body 60 shown in FIG. 9C is obtained. The sintered body 60 is removed from the jig 50. The sintered body 60 includes a flat base 61 and a plurality of protrusions 62 arranged thereon. The size and shape of the protrusions 62 correspond to the size and shape of the recesses 52. In this embodiment, the planar shape of the protrusions 62 is rectangular, and the three-dimensional shape is a rectangular parallelepiped.

[0063] 9B, the first raw material 55 and the second raw material 57 are preferably sintered under pressure, which can improve the density and thermal conductivity of the sintered body 60 to be produced.

[0064] In the sintered body 60 of this embodiment, the base 61 contains copper as a main component. The region 62a of the protrusion 62 contains copper and diamond. The region 62b of the protrusion 62 contains copper as a main component. The region 62b is located between the base 61 and the region 62a. The region 62a is a region formed by sintering the first raw material 55. The base 61 and the region 62b are regions formed by sintering the second raw material 57. Therefore, in the sintered body 60 of this embodiment, the base 61 and the region 62b do not contain diamond.

[0065] The difference in the area occupied by diamond per unit area between the first portion 11a and the second portion 11b of the substrate 1 is due to the pressure applied to the second raw material 57 toward the first raw material 55, as shown in FIG. 9B. When pressure is applied to the second raw material 57, a portion of the second raw material 57 enters the recess 52 of the jig 50. A portion of the second raw material 57 also mixes with a portion of the first raw material 55. The first raw material 55 contains diamond, but the second raw material 57 does not. Therefore, the diamond density is lower in the portion where the first raw material 55 and the second raw material 57 are mixed compared to the portion where these raw materials are not mixed. When the first raw material 55 and the second raw material 57 are fired in this state, the first portion 11a and the second portion 11b of the substrate 1 are formed.

[0066] Next, a step of arranging ceramic members is performed. In the step of arranging ceramic members, ceramic members are arranged on the side surfaces of each of the plurality of protrusions 62 of the sintered body 60 removed from the jig 50 via an active metal brazing material.

[0067] As shown in FIG. 10A, a ceramic member 70 having holes 71 is prepared. In a plan view, the outer shape of the sintered body 60 on the side of the protrusions 62 is similar to the outer shape of the holes 71. The ceramic member 70 has a plurality of holes 71 penetrating from the upper surface to the lower surface. The positions and sizes of the holes 71 correspond to the positions and sizes of the protrusions 62. In this embodiment, the thickness t1 (dimension in the Z direction) of the ceramic member 70 is greater than the thickness t2 of the protrusions 62.

[0068] As shown in FIG. 10B , an active metal brazing material 63 is applied by printing around the protrusions 62 so as to scrape the upper surfaces of the protrusions 62. The active metal brazing material may be applied by syringe filling as long as it is disposed around the protrusions 62. At this time, the active metal brazing material 63 may also be applied to the upper surfaces of the protrusions 62. The active metal brazing material 63 contains copper and an active metal element. The active metal element is at least one selected from the group consisting of titanium, hafnium, zirconium, niobium, cerium, and magnesium. The active metal brazing material 63 may further contain silver, tin, indium, or the like. In particular, the inclusion of silver in the active metal brazing material 63 lowers the melting point, thereby enabling the firing temperature to be lowered in the step of joining the ceramic member and the sintered body, which will be described later.

[0069] 10C , the protrusions 62 of the sintered body 60, each having an active metal brazing material 63 attached to its side surface, are inserted into the hole 71 of the ceramic member 70. In this embodiment, the outer peripheral surface of the protrusion 62 is separated from the inner peripheral surface of the hole 71 to such an extent that the active metal brazing material 63 can be disposed between the protrusion 62 and the hole 71. As a result, the ceramic member 70 is disposed on each side surface of the plurality of protrusions 62 via the active metal brazing material 63. The active metal brazing material 63 is also disposed between the upper surface of the base 61 and the lower surface of the ceramic member 70.

[0070] Next, the active metal brazing material 63 is fired to bond the ceramic member 70 and the sintered body 60 together.

[0071] As shown in FIG. 11A, the process of joining the ceramic member and the sintered body involves printing an active metal brazing material 63 onto the protrusions 62 and the ceramic member 70, and then placing a copper plate 80 on top of the active metal brazing material 63. The planar size of the copper plate 80 is approximately the same as the planar size of the base 61. To reduce warping during firing, the copper plate 80 preferably has a thickness equivalent to that of the base 61 of the sintered body 60. The thickness of the copper plate 80 is, for example, 50 μm to 300 μm. A laminate consisting of the sintered body 60, the active metal brazing material 63, the ceramic member 70, and the copper plate 80 is fired at a temperature of 700°C to 1200°C. At this time, if the diamond D is a composite particle having diamond particles 41 and a plating layer covering the diamond particles 41, the plating layer may melt. The melted plating layer becomes part of the region 62a of the protrusions 62 (the conductive member 10 described below).

[0072] By firing, the active metal brazing material 63 melts and solidifies, forming a bonding layer 65 as shown in FIG. 11B. The sintered body 60, the ceramic member 70, and the copper plate 80 are bonded to one another by the bonding layer 65, thereby producing a bonded body 90. The process of bonding the ceramic member and the sintered body further includes a step of removing the sintered body 60 except for the multiple protrusions 62 after firing the active metal brazing material 63. As shown in FIG. 11C, both sides of the bonded body 90 are ground. By grinding both sides, the base 61 of the sintered body 60, part of the bonding layer 65, and the copper plate 80 are removed. Only the multiple protrusions 62 remain on the sintered body 60. Note that in FIG. 11C, the bonded body 90 is shown upside down compared to FIG. 11B.

[0073] In this embodiment, a portion of the sintered body 60 is removed by grinding, as shown in FIGS. 11B and 11C. At this time, the base 61 and a portion of the region 62b of the protrusion 62 are ground. In this embodiment, as shown in FIG. 10A, the thickness t1 of the ceramic member 70 that fits with the sintered body 60 is greater than the thickness t2 of each protrusion 62. Therefore, when the copper plate 80 is ground in the subsequent step shown in FIG. 11C, the upper and lower surfaces of the ceramic member 70 function as stoppers. At this time, the protrusions 62 located inside the upper and lower surfaces of the ceramic member 70 in the Z direction are hardly ground. Furthermore, the protrusions 62 in the region 62b are formed by sintering the second raw material 57 placed on the first raw material 55 while applying pressure. Because the protrusions 62 do not contain diamond, grinding the protrusions 62 is easy. Diamond is harder than copper. Therefore, if a portion of the sintered body 60 made from the first raw material 55 is ground, there will be a difference in the amount of grinding between the diamond and the copper. As a result, the ground surface will have greater irregularities and will be less flat. In contrast, the second raw material 57 does not contain diamond, so it can be ground more uniformly. Because the region 62b of the convex portion 62 does not contain diamond, the surface irregularities of the ground region 62b can be reduced, and flatness can be improved.

[0074] On the opposite side of base 61, a part of bonding layer 65 adjacent to protrusion 62 that remains unground is intended to become third region 13 of substrate 1. Bonding layer 65 does not contain diamond, and is therefore easy to grind.

[0075] 11C, a bonded body 90 including a substrate according to the embodiment is produced. The obtained bonded body 90 may be used as the substrate 1, or a plurality of substrates 1 may be produced by dividing the bonded body 90 into individual pieces so as to include at least two sintered bodies 60 (protrusions 62). In the bonded body 90, the sintered bodies 60 and the bonding layer 65 correspond to the conductive member 10 shown in FIG. 1. The region 62a corresponds to the first region 11. The region 62b corresponds to the second region 12. The bonding layer 65 corresponds to the third region 13. The ceramic member 70 corresponds to the ceramic member 20.

[0076] 12A to 12C are schematic views showing a method for manufacturing a light emitting device according to an embodiment.

[0077] The manufacturing method of the light emitting device 2 includes the steps of manufacturing a substrate by the above-described manufacturing method, and arranging one light emitting element on each of two sintered bodies (corresponding to the convex portions 62 before being removed) out of the plurality of sintered bodies (corresponding to the convex portions 62 before being removed) of the substrate.

[0078] A method for manufacturing a light emitting device 2 using the bonded body 90 before singulation as a substrate will be described below. In this embodiment, after the step of arranging the ceramic members, a step of forming a metal layer on the plurality of protrusions and the ceramic members is further included. First, electroless plating (substitution plating) is performed on the bonded body 90. As a result, as shown in FIG. 12A , a metal layer 30 is formed on the upper surface of the sintered body 60 and on the upper surface of the bonding layer 65, and a metal layer 31 is formed on the lower surface of the bonding layer 65. In this embodiment, since the surface of the sintered body 60 exposed on the upper surface and the lower surface of the bonding layer 65 exposed on the lower surface of the bonded body 90 become the patterns of the metal layer 30 and the metal layer 31, respectively, no mask is required for electroless plating. Note that wiring for supplying power to the surface of the sintered body 60 exposed on the upper surface and the lower surface of the bonding layer 65 exposed on the lower surface of the bonded body 90 may be provided in the bonded body 90 before electrolytic plating.

[0079] As shown in FIG. 12B, light-emitting elements 33 are bonded onto the metal layer 30 via bonding members 32. At this time, one light-emitting element 33 is placed on two of the sintered bodies 60 of the bonded body 90 (substrate) so that the positive and negative element electrodes of the light-emitting element 33 are connected, respectively. A fluorescent member 34 is placed on each light-emitting element 33. The light-emitting elements 33 and the fluorescent members 34 may be bonded directly or indirectly using an adhesive. A white resin is placed in the gaps between the metal layers 30 and between the bonded body 90 and the metal layer 30, and then cured. The white resin can be formed by, for example, compression molding or transfer molding. If a white resin is provided on the upper surface of the fluorescent member 34, the white resin is removed by grinding to expose the fluorescent member 34. As a result, a covering member 35 is formed covering the side surfaces of the light-emitting elements 33 and the fluorescent member 34, as shown in FIG. 12C. Instead of the white resin, the covering member 35 may be composed of, for example, a mixture containing boron nitride and an alkali metal silicate. This mixture can be produced by mixing a powder mixture of boron nitride powder and silicon oxide powder with an alkaline solution (e.g., potassium hydroxide) and then heat-curing the mixture. When the alkaline solution is potassium hydroxide, the silicon oxide reacts with the potassium hydroxide during heat-curing to produce potassium silicate, an alkali metal silicate. Boron nitride is a material that can reduce the shrinkage of the mixture during heat-curing. Aluminum oxide can be used instead of boron nitride.

[0080] This embodiment further includes a step of dividing the substrate 1 into a plurality of pieces so that the light emitting device 2 includes at least one light emitting element 33. Specifically, as shown in Fig. 12D, the covering member 35 and the assembly 90 are cut along dashed lines L located between adjacent light emitting elements 33. Through the steps described above, the light emitting device 2 according to this embodiment is manufactured.

[0081] (Modification of Substrate 1) 13A to 13C are cross-sectional views showing a substrate according to a modified example of the embodiment. The specific configuration of the substrate according to the embodiment is not limited to the examples shown in FIGS. 1 to 3. For example, in the substrate 1A shown in FIG. 13A, the length of the ceramic member 20 in the X direction is constant in the Z direction. The substrate 1A eliminates the need to form the ceramic member 20 into a convex shape, which facilitates processing of the ceramic member 20 and improves productivity. The substrate 1B shown in FIG. 13B further includes a ceramic member 20a and a ceramic member 20b compared to the substrate 1. The ceramic member 20a and the ceramic member 20b are disposed at both ends of the substrate 1B in the X direction. The conductive member 10 and the ceramic member 20 are located between the ceramic member 20a and the ceramic member 20b in the X direction. In the substrate 1B, since there are no diamonds at the cutting positions when the bonded body 90 is singulated, the bonded body 90 can be easily singulated. Substrate 1C shown in FIG. 13C differs from substrate 1B in that third region 13 is disposed below each of ceramic members 20a and 20b. Like substrate 1B, substrate 1C does not have diamonds at the cutting positions, making it easy to separate bonded bodies 90. Furthermore, by exposing third region 13 of conductive member 10 on the underside of the side surface of substrate 1C, when substrate 1C is mounted on a mounting board with solder, solder creeps up on the side surface of substrate 1C to form a fillet, thereby improving the heat dissipation of substrate 1C.

[0082] As shown in FIGS. 13A to 13C, the specific configuration of the substrate according to the embodiment can be changed as appropriate as long as the first region 11 is provided in the conductive member 10.

[0083] The substrate, light-emitting device, substrate manufacturing method, and light-emitting device manufacturing method of the present disclosure can provide a substrate that can further reduce the difference in thermal expansion coefficient between a conductive member and a ceramic member, and a light-emitting device including the substrate, and therefore can be suitably applied to substrates used in light-emitting devices in in-vehicle light sources, lighting light sources, light sources for various indicators, light sources for displays, light sources for LCD backlights, traffic lights, in-vehicle components, channel letters for signs, etc. However, the substrate, light-emitting device, substrate manufacturing method, and light-emitting device manufacturing method of the present disclosure can be applied to substrates including a conductive member and a ceramic member that are used in a variety of applications.

[0084] The present disclosure includes the following embodiments. (Section 1) a conductive member including a first region, a second region, and a third region, and a ceramic member; the first region includes copper and diamond; the second region is disposed on the first region and is primarily composed of copper; the ceramic member is disposed apart from the first region and the second region in a second direction perpendicular to a first direction from the first region toward the second region, the third region is disposed between the first region and the ceramic member and between the second region and the ceramic member, and includes at least one selected from the group consisting of titanium, hafnium, zirconium, niobium, cerium, and magnesium, and copper; the diamond disposed in the first region near the third region is in contact with the third region; A substrate, wherein in a cross section parallel to the first direction, the first region includes a first portion and a second portion located between the first portion and the second region in the first direction, and the area occupied by the diamond per unit area in the second portion is smaller than the area occupied by the diamond per unit area in the first portion. (Section 2) Item 1. The substrate according to item 1, wherein the third region is further provided below the first region. (Section 3) Item 3. The substrate according to item 1 or 2, wherein the diamond grain size is 20 μm or more and 130 μm or less. (Section 4) Item 3. The substrate according to item 1 or 2, wherein the diamond grain size is greater than 20 μm and smaller than 80 μm. (Section 5) 5. The substrate according to any one of items 1 to 4, wherein the diamond occupies 10% to 50% of the area of ​​the conductive member in the cross section. (Section 6) 6. The substrate according to any one of items 1 to 5, wherein the thickness of the first region in the first direction is greater than the thickness of the second region in the first direction. (Section 7) 7. The substrate according to any one of items 1 to 6, wherein the length of the first region in the second direction and the length of the second region in the second direction are longer than the length of the ceramic member in the second direction. (Section 8) 8. The substrate according to any one of items 1 to 7, wherein the length of the upper portion of the ceramic member in the second direction is shorter than the length of the lower portion of the ceramic member in the second direction. (Section 9) Item 9. The substrate according to any one of items 1 to 8, wherein the third region further contains silver. (Section 10) A substrate according to any one of items 1 to 9, a light emitting element provided on the second region and the ceramic member and electrically connected to the second region; A light emitting device comprising: (Section 11) a step of preparing a sintered body having a plurality of protrusions by placing a first raw material containing copper powder and diamond inside the recess of a jig having an upper surface and a recess recessed from the upper surface, placing a second raw material containing copper powder on the first raw material and the upper surface of the jig, and sintering the first raw material and the second raw material; a step of arranging ceramic members on side surfaces of the plurality of protrusions of the sintered body removed from the jig, with an active metal brazing material interposed therebetween; a step of firing the active metal brazing material to join the ceramic member and the sintered body; A method for manufacturing a substrate comprising: (Section 12) Item 12. The method for manufacturing a substrate according to item 11, further comprising the step of forming a metal layer on the plurality of convex portions and the ceramic member after the step of arranging the ceramic member. (Section 13) Item 13. The method for manufacturing a substrate according to item 11 or 12, further comprising the step of removing a portion of the sintered body other than the plurality of protrusions after firing the active metal brazing material in the step of joining the ceramic member and the sintered body. (Section 14) Item 14. The method for manufacturing a substrate according to any one of items 11 to 13, wherein the average particle size of the copper powder of the first raw material and the average particle size of the copper powder of the second raw material are 1 μm or more and 8 μm or less. (Section 15) 15. The method for manufacturing a substrate according to any one of items 11 to 14, wherein the diamond has a particle size of 20 μm or more and 130 μm or less. (Section 16) Item 16. The method for manufacturing a substrate according to any one of Items 11 to 15, wherein in the step of producing the sintered body, the first raw material and the second raw material are sintered while being pressurized. (Section 17) Item 17. The method for manufacturing a substrate according to any one of items 11 to 16, wherein a thickness of the first source material placed inside the recess is greater than a thickness of the second source material placed inside the recess. (Section 18) Item 18. The method for manufacturing a substrate according to any one of Items 11 to 17, wherein the ceramic member has a thickness greater than the thickness of each of the plurality of protrusions. (Section 19) A step of manufacturing the substrate by the method for manufacturing the substrate according to any one of items 11 to 18; a step of disposing one light-emitting element on each of two of the plurality of convex portions of the sintered body of the substrate; A method for manufacturing a light emitting device comprising: (Section 20) 20. The method for manufacturing a light emitting device according to item 19, further comprising the step of dividing the substrate into a plurality of pieces each including at least one light emitting element.

[0085] The above-described embodiments are examples of realizing the present disclosure, and the present disclosure is not limited to these embodiments. For example, the present disclosure also includes embodiments in which some components or steps are added, deleted, or modified in the above-described embodiments. Furthermore, the above-described embodiments can be implemented in combination with each other. [Explanation of symbols]

[0086] 1, 1A to 1C: Substrate 2: Light emitting device 10: Conductive material 11:First area 11a: 1st part 11b:Second part 12:Second area 13:Third area 20, 20a, 20b: ceramic members 21: Upper 22: Lower 30: Metal layer 31: Metal layer 32: Joint material 33: Light emitting element 34: Fluorescent material 35: Covering material 36: Light-emitting surface of light-emitting element 41: Diamond particles 42: Nickel plating layer 43: Copper plating layer 50: Jig 51:Top surface 52: Recess 53: Release material 55: 1st raw material 56: Cylinder 57:Second raw material 60: Sintered body 61: Base 62: Convex 62a:Area 62b: Area 63: Active metal brazing material 65: Bonding layer 70: Ceramic materials 71: Hole 80:Copper plate 90:Zygote D, D1~D3: Diamond t1: thickness t2: thickness

Claims

1. a conductive member including a first region, a second region, and a third region; and a ceramic member; the first region includes copper and diamond; the second region is disposed on the first region and is primarily composed of copper; the ceramic member is disposed apart from the first region and the second region in a second direction perpendicular to a first direction from the first region toward the second region, the third region is disposed between the first region and the ceramic member and between the second region and the ceramic member, and includes at least one selected from the group consisting of titanium, hafnium, zirconium, niobium, cerium, and magnesium, and copper; the diamond disposed in the first region near the third region contacts the third region; A substrate, wherein in a cross section parallel to the first direction, the first region includes a first portion and a second portion located between the first portion and the second region in the first direction, and the area occupied by the diamond per unit area in the second portion is smaller than the area occupied by the diamond per unit area in the first portion.

2. The substrate of claim 1 , wherein the third region is further disposed below the first region.

3. 2. The substrate according to claim 1, wherein the diamond grain size is 20 μm or more and 130 μm or less.

4. The substrate of claim 1 , wherein the diamond grain size is greater than 20 μm and less than 80 μm.

5. The substrate of claim 1 , wherein the diamond occupies 10% to 50% of the area of ​​the first region in the cross section.

6. The substrate of claim 1 , wherein the thickness of the first region in the first direction is greater than the thickness of the second region in the first direction.

7. The substrate according to claim 1 , wherein a length of the first region in the second direction and a length of the second region in the second direction are longer than a length of the ceramic member in the second direction.

8. The substrate according to claim 1 , wherein a length of an upper portion of the ceramic member in the second direction is shorter than a length of a lower portion of the ceramic member in the second direction.

9. The substrate of claim 1 , wherein the third region further comprises silver.

10. A substrate according to any one of claims 1 to 9; a light emitting element provided on the second region and the ceramic member and electrically connected to the second region; A light emitting device comprising:

11. a step of preparing a sintered body having a plurality of protrusions by placing a first raw material containing copper powder and diamond inside the recess of a jig having an upper surface and a recess recessed from the upper surface, placing a second raw material containing copper powder on the first raw material and the upper surface of the jig, and sintering the first raw material and the second raw material; a step of arranging ceramic members on side surfaces of the plurality of protrusions of the sintered body removed from the jig, with an active metal brazing material interposed therebetween; a step of firing the active metal brazing material to join the ceramic member and the sintered body; A method for manufacturing a substrate comprising:

12. The method for manufacturing a substrate according to claim 11 , further comprising the step of forming a metal layer on the plurality of protrusions and the ceramic member after the step of arranging the ceramic member.

13. 12. The method for manufacturing a substrate according to claim 11, wherein the step of joining the ceramic member and the sintered body further comprises the step of removing a portion of the sintered body other than the plurality of protrusions after firing the active metal brazing material.

14. The method for manufacturing a substrate according to claim 11 , wherein the average particle size of the copper powder of the first source material and the average particle size of the copper powder of the second source material are 1 μm or more and 8 μm or less.

15. The method for manufacturing a substrate according to claim 11, wherein the diamond grain size is 20 μm or more and 130 μm or less.

16. The method for manufacturing a substrate according to claim 11 , wherein in the step of producing the sintered body, the first raw material and the second raw material are sintered while being pressurized.

17. The method for manufacturing a substrate according to claim 11 , wherein a thickness of the first source material disposed inside the recess is greater than a thickness of the second source material disposed inside the recess.

18. The method for manufacturing a substrate according to claim 11 , wherein the ceramic member has a thickness greater than a thickness of each of the plurality of protrusions.

19. a step of manufacturing the substrate by the method of manufacturing the substrate according to any one of claims 11 to 18; a step of disposing one light-emitting element on each of two of the plurality of convex portions of the sintered body of the substrate; A method for manufacturing a light emitting device comprising:

20. 20. The method for manufacturing a light emitting device according to claim 19, further comprising the step of dividing the substrate into a plurality of pieces, each of which includes at least one light emitting element.

Images