Shortwave infrared inspection of patterned substrate using focus averaging

Abstract

To provide shortwave infrared inspection of a patterned substrate using focus averaging.SOLUTION: A system includes a memory, and at least one processing device that is operatively coupled to the memory, and that is to obtain metrology data with respect to a substrate, cause a lithography process to be performed using the metrology data to obtain a patterned substrate to be processed, and after performing the lithography process, cause a shortwave infrared (SWIR) inspection system to inspect the patterned substrate by focus averaging a plurality of images of the patterned substrate. Each image of the plurality of images corresponds to a respective SWIR wavelength of a plurality of SWIR wavelengths.SELECTED DRAWING: Figure 3

Description

[Technical Field]

[0001] FIELD OF THE DISCLOSURE

[0001] Embodiments of the present disclosure relate to metrology, and more particularly to short wave infrared (SWIR) inspection of patterned substrates using focus averaging. [Background technology]

[0002]

[0002] Photolithography is widely used in the manufacture of semiconductor devices and display devices such as liquid crystal displays (LCDs). Large area substrates are often used in the manufacture of LCDs. LCDs, or flat panels, are commonly used in active matrix displays such as those found in computers, touch panel devices, personal digital assistants (PDAs), mobile phones, and television monitors. Flat panels typically contain a layer of liquid crystal material that forms pixels sandwiched between two plates. When power from a power source is applied to the liquid crystal material, the amount of light that passes through the liquid crystal material is controlled at the pixel locations to create an image. Other manufacturing techniques are used to manufacture organic light-emitting diode (OLED) displays, which are used in computers, monitors, and other systems that provide visual output.

[0003] Microlithography techniques have been used to create electrical features incorporated as part of the liquid crystal material layer that forms the pixels. According to these techniques, a light-sensitive photoresist is applied to at least one surface of a substrate. A pattern generator then exposes selected areas of the light-sensitive photoresist to light as part of a pattern, causing chemical changes in the photoresist in the selected areas to prepare them for subsequent material removal and / or material addition processes to create the electrical features. Summary of the Invention

[0004] In some embodiments, a system is provided that includes a memory and at least one processing device operatively coupled to the memory for acquiring metrology data for the substrate, performing a lithography process using the metrology data to acquire a patterned substrate to be processed, and causing a short-wave infrared (SWIR) inspection system to inspect the patterned substrate by focus-averaging a plurality of images of the patterned substrate, each image of the plurality of images corresponding to a respective SWIR wavelength of a plurality of SWIR wavelengths.

[0005] In some embodiments, a method is provided that includes acquiring, by at least one processing device, metrology data for a substrate, causing, by the at least one processing device, a lithography process using the metrology data to acquire a processed patterned substrate, and causing, by the at least one processing device, a short wave infrared (SWIR) inspection system to inspect the patterned substrate by focus averaging a plurality of images of the patterned substrate, each image of the plurality of images corresponding to a respective SWIR wavelength of a plurality of SWIR wavelengths.

[0006] In some embodiments, a system is provided. The system includes a lithography system for performing a lithography process using metrology data to acquire a patterned substrate to be processed, and a short-wave infrared (SWIR) inspection system operatively coupled to the lithography system. The SWIR inspection system includes at least one SWIR wave source that generates a plurality of SWIR waves, each having a respective SWIR wavelength among a plurality of SWIR wavelengths, and a SWIR imaging system including at least one image capture device operatively coupled to an optical system and the at least one image sensor. The system further includes a memory and at least one processing device operatively coupled to the memory for acquiring the metrology data, performing the lithography process using the metrology data to acquire the patterned substrate, and causing the SWIR inspection system to inspect the patterned substrate by focus averaging a plurality of images of the patterned substrate. Each image of the patterned substrate corresponds to a respective SWIR wavelength among the plurality of SWIR wavelengths.

[0007] The present disclosure is illustrated by way of example, and not limitation, in the accompanying drawings, in which like reference numerals indicate like elements. It should be noted that different references to "an" or "one" embodiment in this disclosure do not necessarily refer to the same embodiment, and such references mean at least one. [Brief explanation of the drawings]

[0008] [Figure 1A] FIG. 1 illustrates an exemplary photolithography system, in accordance with some embodiments. [Figure 1B] FIG. 1 illustrates an exemplary photolithography system, in accordance with some embodiments. [Figure 2A] FIG. 1 is a block diagram of a system capable of performing short-wave infrared (SWIR) inspection of patterned substrates using focus averaging, according to some embodiments. [Figure 2B] FIG. 1 is a diagram of an exemplary short-wave infrared (SWIR) inspection system, according to some embodiments. [Figure 3] FIG. 1 is a diagram of an exemplary short-wave infrared (SWIR) imaging system that can be used to implement a SWIR inspection system, according to some embodiments. [Figure 4] FIG. 1 is a timing diagram illustrating an example operation of a short wave infrared (SWIR) inspection system, according to some embodiments. [Figure 5A] FIG. 1 is a diagram of an example layout plot, according to some embodiments. [Figure 5B] FIG. 1 is a diagram of an example layout plot, according to some embodiments. [Figure 6] FIG. 1 is a flow diagram of an exemplary method for performing short-wave infrared (SWIR) inspection of a patterned substrate using focus averaging, according to some embodiments. [Figure 7A] FIG. 1 is a flow diagram of an exemplary method for performing short-wave infrared (SWIR) inspection of a patterned substrate using focus averaging, according to some embodiments. [Figure 7B] FIG. 1 is a flow diagram of an exemplary method for performing short-wave infrared (SWIR) inspection of a patterned substrate using focus averaging, according to some embodiments. [Figure 8] 1 illustrates a diagrammatic representation of an exemplary computer system, according to some embodiments. DETAILED DESCRIPTION OF THE INVENTION

[0009]

[0016] Embodiments of the present disclosure relate to short-wave infrared (SWIR) inspection of patterned substrates using focus averaging. For example, SWIR inspection can include broadband SWIR inspection. One example of a patterned substrate is a patterned silicon (Si) substrate. In some implementations, the patterned substrate includes one or more chiplets. A chiplet refers to an integrated circuit that implements a specific function. A chiplet can be combined with other chiplets on an interposer to form a single package. For example, the package can include a system-on-chip (SoC).

[0010]

[0017] Patterned substrates (e.g., wafers) can be inspected using a SWIR inspection unit that generates light waves (i.e., light) having wavelengths in the SWIR range of the electromagnetic spectrum ("SWIR wavelengths"). Generally, the infrared (IR) range is defined by a lower wavelength limit of about 760 nanometers (nm) and an upper wavelength limit of about 100,000 nm. For example, the wavelengths of each SWIR wave can range from about 1050 nm to about 1800 nm.

[0011]

[0018] The SWIR waves can be generated by a SWIR wave source. For example, the SWIR wave source is a laser. As another example, the SWIR wave source can be a light-emitting diode (LED). As yet another example, the SWIR wave source can be a lamp (e.g., a broadband lamp) with a filter. The SWIR wave source (e.g., a laser, LED, and / or lamp) can cover a range that exceeds the bandgap of the substrate material. For example, the bandgap of Si is approximately 1054 nm.

[0012]

[0019] The SWIR inspection system can include a SWIR imaging system. The SWIR imaging system can include an optical system that can be used to direct SWIR waves received from a SWIR wave source toward the patterned substrate for imaging the patterned substrate. For example, the SWIR waves travel from the SWIR wave source via an optical fiber toward a set of lens elements of the optical system. The optical system can further include an objective lens (e.g., a microscope objective lens) that can direct the SWIR waves toward the patterned substrate and focus the SWIR waves reflected from the patterned substrate to generate a focused SWIR wave.

[0013]

[0020] The SWIR imaging system may further include at least one image capture device (e.g., a camera) for receiving the focused SWIR waves. For example, the image capture device may have a shutter that can be opened and closed to allow the focused SWIR waves to enter the lens of the image capture device. The image capture device may further include, or be operatively coupled to, an image sensor for detecting the focused SWIR waves. The image sensor may include, or be operatively coupled to, at least one processing device for processing the detected SWIR waves to generate image data.

[0014]

[0021] A SWIR imaging system can generate multiple images of a patterned substrate by scanning the patterned substrate from an initial position to a final position. The patterned substrate can contain multiple features that are inspected from the images. Examples of features on a patterned substrate include alignment marks, vias, and edges (e.g., chip edges). However, as a patterned substrate is processed and layers of circuitry and device features are built, it can become difficult for an IR inspection system to focus the SWIR waves onto the surface of the substrate. Each wavelength (or frequency) of SWIR waves can have a corresponding optimal focus for generating optimal images of the patterned substrate. Focus is generally defined by the distance below a lens system (e.g., an objective lens), and the optimal focus for a particular wavelength can be the optimal distance between the patterned substrate and the lens system that can image the patterned substrate using that particular wavelength. Because each wavelength has an optical focus, it may not be possible to accurately detect the location of multiple features on a patterned substrate by scanning the patterned substrate using a typical IR inspection system. This may particularly impact high magnification applications, for example inspection of patterned substrates, where the depth of focus may be small and / or precise focus control may be required.

[0015]

[0022] In some embodiments, the SWIR imaging system includes multiple image capture devices, and the optical system includes elements designed to route each focused SWIR wave reflected from the patterned substrate to a respective image capture device. However, implementing such a multiple image capture device system may be impractical. For example, the image capture devices may be expensive. As another example, adding additional image capture devices requires adding elements to the optical system to direct the SWIR waves to each image capture device, which further increases costs and may also lead to power losses of the SWIR waves.

[0016]

[0023] The embodiments described herein can improve the ability of a SWIR inspection system to inspect a patterned substrate and detect the location of features on the patterned substrate by generating focus-averaged images using a single image sensor. The patterned substrate can be positioned on a stage. The stage can move the patterned substrate in multiple directions. Each SWIR wave can be generated by a respective SWIR wave source (e.g., laser, LED, lamp, etc.).

[0017]

[0024] In some embodiments, multiple SWIR waves generated by at least one SWIR wave source propagate through a common optical fiber to the SWIR imaging system. For example, multiple SWIR waves generated by at least one SWIR wave source can be combined by multiplexing and propagate through a common optical fiber. In some embodiments, the multiplexing is wavelength division multiplexing (WDM). In some embodiments, at least one SWIR wave generated by at least one SWIR wave source propagates through one optical fiber, and at least one other SWIR wave generated by at least one SWIR wave source propagates through a different optical fiber. In some embodiments, each SWIR wave generated by at least one SWIR wave source propagates through a respective optical fiber.

[0018]

[0025] The SWIR inspection system can include a SWIR imaging system including an optical system capable of directing multiple SWIR waves, each having a respective SWIR wavelength, onto the patterned substrate. The SWIR waves reflected from the patterned substrate can be received by at least one image capture device (e.g., a camera). The SWIR imaging system can further include at least one image sensor included within or operatively coupled to the at least one image capture device, which can detect the multiple focused SWIR waves reflected from the patterned substrate and generate a focus-averaged image of the patterned substrate based on the multiple focused SWIR waves. Thus, combining the multiple focused signals provides a focus-averaging effect that accounts for variations in optimal focus across various wavelengths.

[0019]

[0026] A controller including at least one processing device can control the operation of components of the SWIR imaging system to improve scan and image quality. The controller can control multiple SWIR wave sources, at least one image capture device, a stage, etc. For example, the controller can control the timing of shutter opening and closing and the timing of light waves provided by at least one light wave source. More specifically, the controller can cause multiple SWIR wave sources (e.g., lasers, LEDs, and / or light bulbs) to generate SWIR waves (e.g., flashes) independently of the exposure time of the shutter of the at least one image capture device. The SWIR wave sources can be synchronized with the movement of the patterned substrate (e.g., the movement of the stage) via a position sensor, which transmits position data to the controller. The inspection position of the patterned substrate can be predetermined by an inspection layout file. From the position data, the controller can control the opening and closing of the camera shutter using a position-based trigger signal. The controller can cause the SWIR wave sources to generate SWIR waves (e.g., enable the SWIR wave sources) based on the position of the patterned substrate (e.g., the position of the stage) determined from the position sensor. Additionally, the controller can cause the SWIR source to stop generating SWIR waves (e.g., disable the SWIR source) after a predetermined time. For example, the predetermined time can be determined as a function of the stage speed. The controller can control the exposure time by controlling the operation of the SWIR source instead of shutter operation. This allows the SWIR inspection system to scan the entire surface of a patterned substrate more quickly while reducing image smear, improving scanning throughput and image quality.

[0020]

[0027] In some embodiments, the SWIR inspection system implements metrology inspection methods for digital lithography (e.g., in-line metrology). In digital lithography tools, images can be used to locate alignment marks so that processing can be performed at known locations. To acquire the images, image capture devices can be calibrated and specifically selected for pixel size, orientation (rotation), and uniformity.

[0021]

[0028] One of the main challenges in microlithography systems is the placement of interconnects between components. Often, the placement problem involves moving from a fixed perimeter to a component located inside a defined area. The interconnects must be placed from the fixed perimeter (which may be a connection point to another component) to a discrete connection point, such as the die of a component, located inside the defined area.

[0022]

[0029] The embodiments described herein may provide numerous other technical advantages. For example, the embodiments described herein may improve focus margins and detection accuracy when a patterned substrate is being scanned by a SWIR inspection system using only a single image capture device and image sensor. Thus, the embodiments described herein may improve the ability of a SWIR inspection system to image and inspect features on a patterned substrate in a more cost-effective manner.

[0023]

[0030] FIG. 1A is a perspective view of a photolithography system (“system”) 100A according to some embodiments. The system 100A includes a base frame 110, a slab 120, a stage 130, and processing equipment 160. The base frame 110 rests on the floor of a fabrication facility and supports the slab 120. Passive pneumatic isolators 112 are disposed between the base frame 110 and the slab 120. In one embodiment, the slab 120 is a monolithic piece of granite, and the stage 130 is disposed on the slab 120. A substrate 140 is supported on the stage 130. The stage 130 may have multiple holes (not shown) formed therein to allow multiple lift pins (not shown) to pass through. In some embodiments, the lift pins rise to an extended position to receive the substrate 140, such as from one or more transfer robots (not shown). The one or more transfer robots are used to load and unload the substrate 140 onto and from the stage 130.

[0024]

[0031] The substrate 140 may include any suitable material, such as quartz, used as part of a flat panel display. In other embodiments, the substrate 140 is made of other materials. In some embodiments, a photoresist layer is formed on the substrate 140. The photoresist is sensitive to radiation. A positive-tone photoresist includes portions of the photoresist that, upon exposure to radiation, become soluble in a photoresist developer applied to the photoresist after a pattern is written into the photoresist. A negative-tone photoresist includes portions of the photoresist that, upon exposure to radiation, become insoluble in a photoresist developer applied to the photoresist after a pattern is written into the photoresist. The chemical composition of the photoresist determines whether the photoresist is a positive-tone photoresist or a negative-tone photoresist. Examples of photoresists include, but are not limited to, at least one of diazonaphthoquinone, phenol formaldehyde resin, poly(methyl methacrylate), poly(methyl glutarimide), and SU-8. In this manner, a pattern is created on the surface of the substrate 140, forming an electronic circuit.

[0025]

[0032] The system 100A includes a pair of supports 122 and a pair of tracks 124. The pair of supports 122 are disposed on a slab 120, with the slab 120 and the pair of supports 122 being a single piece of material. The pair of tracks 124 are supported by the pair of supports 122, and the stage 130 moves along the tracks 124 in the X direction. In one embodiment, the pair of tracks 124 are a pair of parallel magnetic channels. As shown, each track 124 of the pair of tracks 124 is linear. In other embodiments, one or more of the tracks 124 are non-linear. An encoder 126 is coupled to the stage 130 to provide position information to a controller (not shown).

[0026]

[0033] Processing apparatus 160 includes a support 162 and a processing unit 164. Support 162 is disposed on slab 120 and includes an opening 166 through which stage 130 passes under processing unit 164. Processing unit 164 is supported by support 162. In one embodiment, processing unit 164 is a pattern generator configured to expose photoresist in a photolithography process. In some embodiments, the pattern generator is configured to perform a maskless lithography process. Processing unit 164 can include multiple image projection devices. In one embodiment, processing unit 164 includes as many as 84 image projection devices. Each image projection device is disposed within a case 165. Processing apparatus 160 is useful for performing maskless direct patterning.

[0027]

[0034] During operation, the stage 130 moves in the X direction from a loading position, as shown in FIG. 1A, to a processing position. The processing position is one or more positions of the stage 130 as it passes under a processing unit 164. During operation, the stage 130 is lifted by a plurality of air bearings (not shown) and moves from the loading position to the processing position along a pair of tracks 124. A plurality of vertical guide air bearings (not shown) are coupled to the stage 130 and positioned adjacent the inner wall 128 of each support 122 to stabilize the movement of the stage 130. The stage 130 also moves in the Y direction by moving along the tracks 150 to process and / or index the substrate 140. The stages 130 can operate independently, scanning the substrate 140 in one direction and stepping it in the other direction.

[0028]

[0035] The metrology system can measure the X and Y lateral position coordinates of stage 130 in real time, allowing each of the multiple image projection devices to accurately locate the pattern being written onto the photoresist-covered substrate. The metrology system can also measure the angular position of each of stages 130 about the vertical, or Z, axis in real time. The angular position measurements can be used to keep the angular position constant during a scan by a servo mechanism, or to apply corrections to the position of the pattern being written onto substrate 140 by the image projection devices. These techniques can also be used in combination.

[0029]

[0036] 1B is a perspective view of a photolithography system ("system") 100B according to some embodiments. System 100B is similar to system 100A, except that system 100B includes two stages 130. Each of the two stages 130 can operate independently, scanning a substrate 140 in one direction and stepping it in the other direction. In some embodiments, while one of the two stages 130 is scanning the substrate 140, the other of the two stages 130 unloads the exposed substrate and loads the next substrate to be exposed.

[0030]

[0037] 1A-1B illustrate two embodiments of photolithography systems (e.g., systems 100A and 100B), other systems and configurations are contemplated herein, including photolithography systems including any suitable number of stages.

[0031]

[0038] 2A is a block diagram of a system 200 capable of performing SWIR inspection of a patterned substrate using focus averaging, according to some embodiments. As shown, system 200 may include a lithography system 205 (e.g., lithography system 100A or 100B of FIGS. 1A-1B), a substrate 210, and a SWIR inspection system 220. In some embodiments, substrate 210 is positioned on a stage 212. Examples of SWIR inspection system 220 are described below with reference to FIGS. 1B-2.

[0032]

[0039] In some embodiments, the SWIR inspection system 220 implements a metrology inspection method for lithography (e.g., in-line metrology). For example, the lithography system 205 can use a pre-lithography die metrology method to obtain (e.g., generate) a die metrology file that includes die position and orientation data. The lithography system 205 can then use the die metrology file to perform a lithography process. The lithography process can be performed to generate a substrate design file. For example, the substrate design file can include a digital lithography exposure file generated by integrating a dynamic data connection (DDC). In some embodiments, the lithography system 205 is a digital lithography system used to perform digital lithography.

[0033]

[0040] The SWIR inspection system 220 can then be used to perform a post-lithography inspection methodology (e.g., an in-line inspection process) to generate post-lithography metrology data that can be used to verify the layout of the patterned substrate. For example, the post-lithography metrology data can include die image data that can be used to detect die position and orientation, detect edge breakage, etc. As another example, the post-lithography metrology data can include via image data that can be used to detect via defects. The post-lithography inspection methodology can include at least one of a die-to-die inspection comparison, a die-to-database (e.g., DDC die-to-database) method that runs a model to generate a synthesized expected image, etc. Based on the post-lithography inspection methodology, it is determined whether the patterned substrate is etchable. If so, the patterned substrate can be etched. If not, the lithography data can be updated (e.g., regenerated) to generate new post-lithography metrology data.

[0034]

[0041] FIG. 2B is a block diagram of an exemplary SWIR inspection system (“system”) 220, according to some embodiments. The system 220 can include a substrate 210, a SWIR imaging system 230, at least one SWIR wave source 240, and a controller 250. The SWIR imaging system 230 can include an optical system 232 including a set of optical components (e.g., an objective lens, a lens set, a collimator) used to direct SWIR waves to and from the substrate 210. The SWIR imaging system 230 can further include at least one image capture device 234 and at least one image sensor 236. In some embodiments, the at least one image capture device 234 includes a camera. Examples of the SWIR imaging system 230 are described in more detail below with reference to FIG. 3. In some embodiments, the at least one SWIR wave source 240 includes at least one laser. In some embodiments, the at least one SWIR wave source includes at least one LED. In some embodiments, the at least one SWIR source includes a lamp (eg, a broadband lamp) with a filter.

[0035]

[0042] As shown in FIG. 2B , at least one SWIR wave source 240 is coupled to the SWIR imaging system 230 via at least one optical fiber 245. The at least one SWIR wave source 240 can provide (e.g., generate) multiple SWIR waves having SWIR wavelengths (“SWIR waves”) to the SWIR imaging system 230 via the at least one optical fiber 245. In some embodiments, multiple SWIR wave sources are coupled to a single optical fiber. When the multiple SWIR waves are directed toward the substrate 210 via the optical system 232, the multiple SWIR waves reflect off the substrate 210 back to the optical system 232 and are directed toward the at least one image capture device 234. The at least one image sensor 236 can then detect the multiple SWIR waves reflected from the substrate and generate a focus-averaged image based on the multiple SWIR wavelengths.

[0036]

[0043] Each lens of lens system 232 may be an optical lens formed from any suitable material, including but not limited to glass, silica, a crystalline material, a nanocrystalline material, etc. At least one image sensor 236 may include at least one of a linear image sensor, a complementary metal-oxide semiconductor (CMOS) or active pixel image sensor, a charge-coupled device (CCD) image sensor, a solid-state device that converts an optical image into an analog signal line by line, etc.

[0037]

[0044] The controller 250 can control the timing of the operation of the image capture device 234 and the SWIR wave source 240 to reduce image smear. For example, the shutter of the image capture device 234 can be initially closed and the SWIR wave source 240 can be initially inactive. The controller 250 can open the shutter of the image capture device 234 at a particular time or position of the substrate 210 relative to the SWIR imaging system 230. The controller 250 can determine a second time or position of the substrate relative to the SWIR imaging system 230 at which the SWIR wave source 240 should be activated and activate the SWIR wave source 240 at the second time or position to generate SWIR waves having the respective SWIR wavelengths. The controller 250 can then deactivate the SWIR wave source after a sufficient amount of time has elapsed to generate the respective SWIR wave pulse. The controller 250 can then close the shutter of the image capture device 234 after the image capture device 234 receives the SWIR wave pulse. Further details regarding how controller 250 controls the timing of operation of image capture device 234 and SWIR source 240 are described below with reference to FIG.

[0038]

[0045] During subsequent scans of the substrate 210, the position (e.g., height) of the substrate 210 may change. For example, the vertical position of the substrate may change, reducing the distance between the substrate 210 and the SWIR imaging system 230. An example SWIR imaging system 230 is described below with reference to FIG.

[0039]

[0046] FIG. 3 is a diagram 300 of an exemplary SWIR imaging system 230, according to some embodiments. As shown, the optical system (e.g., optical system 232 of FIG. 1B) can include a collimation element 310 (e.g., a focusing lens element), a mirror 320-1, an optical cube 320-2, and an objective lens 230. For example, as shown, mirror 320-1 is an angled mirror. In some embodiments, mirror 320-1 is at an angle between about 40 degrees and about 50 degrees with respect to the horizontal. Optical cube 320-2 can be, for example, a prism designed to reflect collimated SWIR waves 342 from mirror 320-1. In some embodiments, optical cube 320-2 can be replaced with other optical elements, such as another mirror.

[0040]

[0047] As further shown, SWIR waves 340 are directed toward collimation element 310. SWIR waves 340 can be generated by at least one SWIR wave source (e.g., SWIR wave source 240 in FIG. 2B ) and sent to collimation element 310 via at least one optical fiber (e.g., at least one optical fiber 245 in FIG. 2B ). Collimation element 310 generates collimated SWIR waves 342 that are directed toward mirror 320-1, which reflects them toward optical cube 320-2. Optical cube 320-2 reflects collimated SWIR waves 342 toward a patterned substrate (not shown) (e.g., substrate 210 in FIG. 2B ) located below objective lens 330. The reflected SWIR waves reflected from the patterned substrate can be received by objective lens 330 and generate objective SWIR waves 344. Objective lens 330 can include any suitable optical elements.

[0041]

[0048] In some embodiments, SWIR imaging system 230 is an infinity-corrected optical system. For example, as shown, SWIR imaging system 230 can include a tube lens element 350 designed to receive objective SWIR wave 344 and perform infinity correction on objective SWIR wave 344 to generate infinity-corrected focused (“focused”) SWIR wave 346. The distance between objective lens 330 and tube lens element 350 is referred to as the “infinity space” of the infinity-corrected optical system. In some embodiments, SWIR imaging system 230 is an infinity-corrected optical system that does not include tube lens element 350, and objective SWIR wave 344 is a finite-corrected focused SWIR wave.

[0042]

[0049] The focused wave 346 (or 344 in the case of finite correction optics) is then received by an image capture device 234 operatively coupled to an image sensor 236, which detects the focused wave 346 (or 344), and a focus-averaged image can be generated from the focused wave 346 (or 344).

[0043]

[0050] 4 is a timing diagram 400 illustrating an example operation of a SWIR inspection system, according to some embodiments. For example, the SWIR inspection system may be similar to the SWIR inspection system 220 described above with reference to FIGS. 2A-3 and may include the SWIR imaging system 230 described above with reference to FIGS. 2B-3.

[0044]

[0051] As shown, timing diagram 400 includes line 410 indicating the position of the substrate moving on the stage, line 420 indicating the state (e.g., open or closed) of the shutter of the image capture device as the substrate is moving, and lines 430-1 through 430-3 indicating the operation of each SWIR wave source used to generate SWIR waves having respective SWIR wavelengths.

[0045]

[0052] At position 440, the controller of the SWIR inspection system opens the shutter of the image capture device, as shown by line 420. Position 440 is a position after the target position on the substrate (shown at position 450) where the image is to be captured. Upon reaching position 450, the controller causes each SWIR wave source to generate a respective SWIR wave pulse. To prevent image smearing due to substrate movement, the SWIR wave sources are not activated to generate their respective SWIR waves until position 450.

[0046]

[0053] In the processing of materials with a lithography system, a component with one or more dies is placed on a stage for processing. While an ideal layout of the component can be achieved for processing, various factors can affect such an ideal layout. Due to the processing speed of the lithography system, the component may move slightly as the lithography system handles it. For small components, these slight movements can have a significant impact on the final product, as the traces from origin to destination may be short. Furthermore, because each component may have multiple dies, many connections may be affected if the component is misaligned compared to a "perfect" or ideal layout.

[0047]

[0054] Aspects of the present disclosure provide that, given an ideal placement of one or more dies in a packaging layout and their actual placement, which may include some error, the ideal placement is modified or distorted to match the actual placement, thereby adaptively generating wiring for packaging the dies into a larger assembly.

[0048]

[0055] Referring to FIG. 5A, an ideal layout plot 500A is shown. Such an ideal layout plot would be achieved if each component were placed on the substrate as intended for processing. As can be appreciated, placing components with extremely high precision is difficult. Even if components were placed with high precision for this purpose, digital lithography systems move large substrates at high speeds, which can result in misalignment during processing.

[0049]

[0056] Referring to Figure 5B, an actual layout plot 500B is shown. As can be seen, the components are displaced from their positions in the ideal layout plot 500A shown in Figure 5A. Therefore, the wiring connections to the components must be changed for the components to function properly. To this end, an extended wiring scheme has been devised to ensure proper wiring.

[0050]

[0057] FIG. 6 is a flow diagram of a method 600 for performing SWIR inspection of a patterned substrate using focus averaging, according to some embodiments. Method 600 can be performed by processing logic including hardware, software, firmware, or any combination thereof. In at least one embodiment, method 600 is performed by a controller or control system, such as controller 250 described above with reference to FIG. 2B. While shown in a particular order, the order of processes can be changed unless otherwise specified. Therefore, the illustrated embodiment should be understood as an example only, and the illustrated processes can be performed in a different order, and some processes can be performed in parallel. Furthermore, in various embodiments, one or more processes can be omitted. Therefore, not all processes are required in all embodiments. Other diagrams are possible.

[0051]

[0058] In operation 610, processing logic performs a lithography process using the metrology data to obtain a patterned substrate. In some embodiments, the metrology data is maintained in a die metrology file. In some embodiments, obtaining the metrology data includes generating the metrology data (e.g., generating a die metrology file). In some embodiments, the lithography process is a digital lithography process.

[0052]

[0059] In operation 620, processing logic causes the SWIR inspection system to inspect the patterned substrate using focus averaging based on multiple images of the patterned substrate. For example, the SWIR inspection system 220 may capture several images of the patterned substrate (e.g., a silicon (Si) substrate) using light waves (e.g., light) having respective wavelengths, each image may have a respective image sharpness and / or focus. For example, a first image may be acquired using visible light. A second image may be acquired using SWIR light having a wavelength of about 1000 nm near the low end of the SWIR spectrum. A third image may be acquired using SWIR light having a wavelength of about 1100 nm. A fourth image may be acquired using SWIR light having a wavelength of about 1300 nm. A fifth image may be acquired using SWIR light having a wavelength of about 1400 nm. A sixth image may be acquired using SWIR light having a wavelength of about 1500 nm. A seventh image may be acquired using SWIR light having a wavelength of about 1500 nm. An eighth image may be acquired using SWIR light having a wavelength of approximately 1600 nm. The SWIR inspection system 220 can use the captured images to generate a focus-averaged image by averaging multiple images acquired using light at multiple SWIR wavelengths. Selecting multiple SWIR wavelengths to inspect features of the patterned substrate (e.g., alignment marks, vias, chip edges, etc.) can more accurately detect the locations of these features. Details regarding operations 610-620 are described above with reference to Figures 2A-6B and then below with reference to Figures 7A-7B.

[0053]

[0060] 7A is a flow diagram of a method 610 for performing a lithography process using metrology data. Although shown in a particular order, the order of the processes can be changed unless otherwise specified. Therefore, the illustrated embodiment should be understood as an example only, and the illustrated processes can be performed in a different order, and some processes can be performed in parallel. Furthermore, in various embodiments, one or more processes can be omitted. Therefore, not all processes are required in all embodiments. Other diagrams are possible.

[0054]

[0061] In operation 710A, processing logic acquires design data. Examples of design data include coordinate data of components in a design state and connection patterns to the components. The design data can be acquired, for example, from manufacturing drawings. The components can be any type of component that requires wiring connections, such as, but not limited to, a processor. The wiring can be, for example, from the component to a fixed external area so that the wiring terminates in a predetermined location when the components are finally separated. The components can be placed within a defined field for processing. The actual (x,y) components may vary slightly depending on various factors, such as the ability to accurately position such components during initial processing of the platen (index table) before loading the platen into the microlithography machine. Other factors, such as handling of the components during the microlithography process, may also cause the components to move.

[0055]

[0062] In operation 720A, processing logic scans the in-situ configuration to obtain in-situ data. For example, to realize wiring connections to components that extend to a fixed outer field, the "in-situ" locations of the components on the platen are scanned with at least one scanning device so that the exact location of each component can be ascertained. The platen is then moved to a position within the lithography system where the scan will occur for processing of coordinate data. As will be appreciated, the scan of the actual conditions can also be performed by a separate process if desired, and the data sent to the microlithography machine for use.

[0056]

[0063] In operation 730A, processing logic identifies at least one offset based on the design data and the field data. For example, the design data can be compared to the field data to determine whether an offset exists between the actual placement of the component and its ideal design placement. The offset can be identified so that a microlithography machine knows the exact placement of the component. A computer analysis of the data can be performed to determine the required offset. The computer analysis can not only calculate the offset but also provide new connection wiring locations between the component and the fixed perimeter, thereby speeding up processing.

[0057]

[0064] At operation 740A, processing logic expands at least one connection based on at least one offset. For example, a connection pattern from an ideal design condition may be expanded using at least one offset. Visual image data may also be used to determine the required difference in the connection pattern.

[0058]

[0065] In some embodiments, a hardware designer may determine that slight variations from ideal placement are acceptable. Deviations between wiring connections and components may be determined to be within tolerance levels. In such cases, modifications to the wiring connections may not be necessary. If deviations from these tolerance levels are found, a warning may be generated to a processor to notify the processor that wiring changes / modifications are necessary. In other embodiments, if the component's position and orientation are outside of maximum thresholds, a connection to the component cannot be made effectively. A separate warning may be issued to the processor that the component is out of tolerance and that modifying the wiring connection would damage such a connection. The design of wiring connections may consider not only the placement accuracy of the connection's start and end points, but also the length of the wiring connection. If the length of the wiring is too long for effective operation, for example, resulting in excessive delay, a warning may be generated to the processor that creating such a wiring would be out of specification. In embodiments, connection is understood to mean establishing an electrical connection with a component, such as a microprocessor die.

[0059]

[0066] 7B is a flow diagram of a method 610 for performing a lithography process using metrology data. Although shown in a particular order, the order of the processes can be changed unless otherwise specified. Therefore, the illustrated embodiment should be understood as an example only, and the illustrated processes can be performed in a different order, and some processes can be performed in parallel. Furthermore, in various embodiments, one or more processes can be omitted. Therefore, not all processes are required in all embodiments. Other diagrams are possible.

[0060]

[0067] At operation 710B, processing logic obtains first position data of components of the board and electrical connection patterns of the components in a design state. For example, the first position data may include coordinate data. In some embodiments, the electrical connection patterns are wiring connection patterns.

[0061]

[0068] In operation 720B, processing logic scans the substrate using a microlithography system to obtain second position data (e.g., coordinate data). For example, the substrate can be positioned on a stage of the microlithography system.

[0062]

[0069] At operation 730B, processing logic compares the first position data with the second position data, which enables determining at least one offset between the component scanned with the scanning device and the design state.

[0063]

[0070] At operation 740B, processing logic expands the electrical connection pattern based on the comparison to obtain an expanded pattern. For example, the expansion can be performed based on at least one offset.

[0064]

[0071] At operation 750B, processing logic causes an extended pattern to be fabricated.

[0065]

[0072] In one exemplary embodiment, a method for processing an apparatus in a lithography system is disclosed, the method including acquiring coordinate data of a component and a connection pattern to the component in a design state; positioning the component within range of at least one scanning device associated with the lithography system; scanning the component with the at least one scanning device to create a second coordinate data set for the component; comparing the acquired coordinate data of the component with the second coordinate data set to determine an offset of the component scanned with the scanning device relative to the design state; and extending the connection pattern to the component based at least in part on one of the offset data, a visual image of the scan of the component used to create the second coordinate data set, and the second coordinate data set for the component.

[0066]

[0073] In another non-limiting embodiment, the method may be performed with the component disposed on a substrate.

[0067]

[0074] In another non-limiting embodiment, the method may be performed while the substrate is placed on an index table of the lithography system.

[0068]

[0075] In another non-limiting embodiment, the method may be performed where the expansion of the connectivity pattern is performed by computer analysis.

[0069]

[0076] In another non-limiting embodiment, the method may be performed where comparing the acquired coordinate data to a second coordinate data set further includes comparing the offset to a threshold value.

[0070]

[0077] In another non-limiting embodiment, the method may further include setting the offset to zero if the offset is less than a threshold value.

[0071]

[0078] In another non-limiting embodiment, the method may further include comparing the acquired coordinate data with the second coordinate data set further including comparing the offset to a threshold value and, if the comparison result is greater than the threshold value, alerting a user that the threshold value has been exceeded.

[0072]

[0079] In another non-limiting embodiment, the method may further include manufacturing a connection pattern based on the expanded connection pattern data.

[0073]

[0080] In another exemplary embodiment, a method for processing a device in a microlithography system is disclosed, the method including acquiring position data of a component and an electrical connection pattern to the component in a design state, placing the component on a stage of the microlithography system, positioning the stage within range of at least one scanning device of the microlithography system, scanning the stage including the component with the at least one scanning device to create a second coordinate data set of the component and the electrical connection pattern, comparing the acquired coordinate data of the component with the second coordinate data set to determine an offset of the component scanned with the scanning device relative to the design state, and extending the electrical connection pattern to the component based at least in part on the offset data.

[0074]

[0081] In one exemplary embodiment, the method may further include manufacturing a connection pattern based on the data of the expanded connection pattern.

[0075]

[0082] In another exemplary embodiment, the method may be performed while the component is disposed on a substrate.

[0076]

[0083] In another exemplary embodiment, the method may be performed in which the expansion of the connection pattern is performed by computer analysis.

[0077]

[0084] In another exemplary embodiment, the method may be performed where comparing the acquired coordinate data to a second set of coordinate data further comprises comparing the offset to a threshold value.

[0078]

[0085] In another exemplary embodiment, the method may be performed where the microlithography system is a maskless system.

[0079]

[0086] In another exemplary embodiment, the method may be performed where comparing the acquired coordinate data to a second set of coordinate data further comprises comparing the offset to a threshold value.

[0080]

[0087] In one exemplary embodiment, a method for processing a substrate in a microlithography system is disclosed, the method including: acquiring coordinate data in a design state for at least one component and at least one wiring connection pattern to the at least one component, the component being on and / or within the substrate; placing the substrate on a stage in the microlithography system; moving the substrate on the stage to a scanning device of the lithography system; scanning the substrate including the component with the scanning device to create a second coordinate data set for the component; comparing the acquired coordinate data of the component on the stage with the second coordinate data set to determine an offset of the component scanned with the scanning device relative to the design state; and extending the at least one wiring connection pattern to the component based at least in part on one of the offset data, a visual image of the scan of the component used to create the second coordinate data set, and the second coordinate data set of the component.

[0081]

[0088] In another exemplary embodiment, the method may further include manufacturing at least one wiring connection pattern based on the data of the expanded connection pattern.

[0082]

[0089] In another exemplary embodiment, the method may be performed in which the expansion of the connection pattern is performed by computer analysis.

[0083]

[0090] In yet another exemplary embodiment, the method may be performed where comparing the acquired coordinate data to a second set of coordinate data further comprises comparing the offset to a threshold value.

[0084]

[0091] 8 shows a diagrammatic representation of a machine in the exemplary form of a computer system 800 including a set of instructions executable by the systems described herein to perform one or more of the methods described herein. In one embodiment, the system may include instructions that enable execution of the processes and corresponding components shown and described in connection with FIGS. 1A-7B.

[0085]

[0092] In alternative embodiments, the system may include a machine connected (e.g., networked) to other machines in a LAN, an intranet, an extranet, or the Internet. The machine may operate as a server machine in a client-server network environment. The machine may be a personal computer (PC), a neural network computer, a set-top box (STB), a personal digital assistant (PDA), a mobile phone, a server, a network router, a switch, a bridge, or any machine capable of executing a set of instructions (sequential or otherwise) that specify actions to be performed by the machine. Furthermore, although only a single machine is illustrated, the term "machine" is intended to include a collection of machines that individually or collectively execute a set of instructions (or multiple sets) to perform one or more of the methodologies described herein.

[0086]

[0093] The computer system 800 may include a processing device (processor) 802, a main memory 804 (e.g., read-only memory (ROM), flash memory, dynamic random access memory (DRAM) such as synchronous DRAM (SDRAM)), a static memory 806 (e.g., flash memory, static random access memory (SRAM)), and a data object storage device 818, which communicate with each other via a bus 830.

[0087]

[0094] Processing device 802 may represent one or more general-purpose processing devices, such as a microprocessor, a central processing unit, etc. More specifically, processing device 802 may be a complex instruction set computing (CISC) microprocessor, a reduced instruction set computing (RISC) microprocessor, a very long instruction word (VLIW) microprocessor, or a processor implementing other instruction sets or combinations of instruction sets. Processing device 802 may also be one or more special-purpose processing devices, such as an application-specific integrated circuit (ASIC), a field-programmable gate array (FPGA), a digital signal processor (DSP), a network processor, etc. In various embodiments of the present disclosure, processing device 802 is configured to execute instructions for the devices or systems described herein to perform the operations and processes described herein.

[0088]

[0095] Computer system 800 may further include a network interface device 808. Computer system 800 may also include a video display unit 810 (e.g., a liquid crystal display (LCD) or cathode ray tube (CRT)), an alphanumeric input device 812 (e.g., a keyboard), a cursor control device 814 (e.g., a mouse), and a signal generating device 816 (e.g., a speaker).

[0089]

[0096] The data storage device 818 may include a computer-readable medium 828 having stored thereon one or more sets of instructions for the devices and systems described herein that embody one or more of the methods or functions described herein. The instructions may also reside, completely or at least partially, within the main memory 804 and / or within the processing logic 826 of the processing device 802 during execution by the computer system 800, with the main memory 804 and the processing device 802 also constituting computer-readable media.

[0090]

[0097] Instructions may also be transmitted or received over network 820 via network interface device 808. While computer-readable storage medium 828 is shown as a single medium in the exemplary implementation, the term "computer-readable storage medium" should be interpreted to include a single medium or multiple media (e.g., a centralized or distributed database, and / or associated caches and servers) that store one or more sets of instructions. The term "computer-readable storage medium" is also intended to include any medium that can store, encode, or carry a set of instructions for execution by a machine, causing the machine to perform one or more of the methods of the present disclosure. Thus, the term "computer-readable storage medium" is intended to include, but is not limited to, solid-state memory, optical media, and magnetic media.

[0091]

[0098] The foregoing description provides numerous specific details, such as examples of particular systems, components, methods, etc., to provide a thorough understanding of some embodiments of the present disclosure. However, it will be apparent to those skilled in the art that at least some embodiments of the present disclosure can be practiced without these specific details. In other instances, well-known components or methods have not been described in detail or have been presented in simple block diagram form to avoid unnecessarily obscuring the present disclosure. Thus, the specific details described are for illustrative purposes only. Particular implementations may vary from these example details and still be considered within the scope of the present disclosure.

[0092]

[0099] As used herein, the singular forms "a," "an," and "the" are intended to include the plural forms unless the context clearly indicates otherwise. Thus, for example, reference to a "precursor" includes a mixture of two or more precursors as well as a single precursor, reference to a "reactant" includes a mixture of two or more reactants as well as a single reactant, etc.

[0093]

[0100] References throughout this specification to "one embodiment" or "an embodiment" mean that a particular feature, structure, or characteristic described in connection with that embodiment is included in at least one embodiment. Thus, the appearances of the phrase "in one embodiment" or "in an embodiment" in various places throughout this specification are not necessarily all referring to the same embodiment. Furthermore, the term "or" means an inclusive "or" rather than an exclusive "or." When the terms "about" or "approximately" are used herein, this is intended to mean that the nominal value presented is accurate to within ±10%, e.g., "about 10" would include 9 to 11.

[0094]

[0101] The term "at least about," in reference to a measurable quantity, refers to normal variations in the measurable quantity and greater, as would be expected by one of ordinary skill in the art when making the measurement and exercising a level of care commensurate with the purpose of the measurement and the precision of the measurement device. In certain embodiments, the term "at least about" includes the stated number minus 10% and any greater amount, such as "at least about 10" including 9 and any number greater than 9. The term can also be expressed as "about 10 or greater." Similarly, the term "less than about" generally includes the stated number plus 10% and any lesser amount, such as "less than about 10" including 11 and any number less than 11. The term can also be expressed as "about 10 or less."

[0095]

[0102] The recitation of ranges of values ​​herein is merely intended to serve as a shorthand method of referring individually to each individual value falling within the range, unless otherwise indicated herein, and each individual value is incorporated herein as if set forth individually in the specification. All methods described herein can be performed in any suitable order unless otherwise indicated herein or otherwise clearly contradicted by context. The use of all examples or exemplary language (e.g., "etc.") provided herein is intended only to describe particular materials and methods and does not limit the scope. No language in the specification should be construed as indicating any non-claimed element as essential to the practice of the disclosed materials and methods.

[0096]

[0103] Although the operations of the methods herein are illustrated and described in a particular order, the order of the operations of each method may be changed, certain operations may be performed in reverse order, or certain operations may be performed at least partially concurrently with other operations. In alternative embodiments, the instructions or sub-operations of individual operations may be intermittent and / or interleaved.

[0097]

[0104] It should be understood that the above description is intended to be illustrative, and not restrictive. Many other embodiments will become apparent to those skilled in the art upon reading and understanding the above description. Accordingly, the scope of the disclosure should be determined with reference to the appended claims, along with the full scope of equivalents to which such claims are entitled.

Claims

1. Memory and at least one processing device operatively coupled to the memory, obtaining metrology data relating to the substrate; performing a lithography process using the metrology data to obtain a processed patterned substrate; causing a short wave infrared (SWIR) inspection system to inspect the patterned substrate by focus averaging a plurality of images of the patterned substrate, each image of the plurality of images corresponding to a respective SWIR wavelength of a plurality of SWIR wavelengths; at least one processing device for A system comprising:

2. The system of claim 1 , wherein the metrology data includes at least one of die image data or via image data.

3. To perform the lithography process, the at least one processing device acquiring design data for components arranged on the substrate; scanning a field configuration of the component to obtain field data; identifying at least one offset based on the design data and the field data; expanding at least one connection to the component based on the at least one offset; The system of claim 1 for:

4. The system of claim 3 , wherein the design data includes at least one of coordinate data of the component in a design state or coordinate data of a connection pattern to the component.

5. To perform the lithography process, the at least one processing device acquiring first position data of components and electrical connection patterns disposed on the substrate; scanning the substrate with a microlithography system to obtain second position data; comparing the first location data to the second location data to generate a comparison; expanding the electrical connection pattern based on the comparison to obtain an expanded pattern; producing the expansion pattern; The system of claim 1 for:

6. 6. The system of claim 5, wherein, to compare the first position data with the second position data, the at least one processing device is for determining at least one offset of the component scanned by the microlithography system.

7. The system of claim 1 , wherein the multiple images are captured by a single image sensor using the multiple SWIR wavelengths.

8. acquiring metrology data relating to the substrate by at least one processing device; performing, by the at least one processing device, a lithography process using the metrology data to obtain a processed patterned substrate; causing, by the at least one processing device, a short wave infrared (SWIR) inspection system to inspect the patterned substrate by focus averaging a plurality of images of the patterned substrate, each image of the plurality of images corresponding to a respective SWIR wavelength of a plurality of SWIR wavelengths; A method comprising:

9. The method of claim 8 , wherein the metrology data includes at least one of die image data or via image data.

10. performing the lithography process acquiring design data for components arranged on the substrate; scanning a field configuration of the component to obtain field data; identifying at least one offset based on the design data and the field data; expanding at least one connection to the component based on the at least one offset; The method of claim 8, comprising:

11. The method of claim 10 , wherein the design data includes at least one of coordinate data of the component in a design state or coordinate data of a connection pattern to the component.

12. performing the lithography process acquiring first position data of components and electrical connection patterns disposed on the substrate; scanning the substrate with a microlithography system to obtain second position data; comparing the first location data to the second location data to generate a comparison; expanding the electrical connection pattern based on the comparison to obtain an expanded pattern; producing the expansion pattern; The method of claim 8, comprising:

13. The method of claim 12 , wherein comparing the first position data to the second position data includes at least one offset of the component scanned by the microlithography system.

14. The method of claim 8 , wherein the multiple images are captured by a single image sensor using the multiple SWIR wavelengths.

15. a lithography system for performing a lithography process using the metrology data to obtain a patterned substrate to be processed; a short wave infrared (SWIR) inspection system operatively coupled to the lithography system, comprising: at least one SWIR wave source for generating a plurality of SWIR waves, each having a respective SWIR wavelength of the plurality of SWIR wavelengths; a SWIR imaging system comprising an optical system and at least one image capture device operatively coupled to at least one image sensor; a SWIR inspection system comprising: Memory and at least one processing device operatively coupled to the memory, acquiring the measurement data; performing the lithography process using the metrology data to obtain the patterned substrate; and causing the SWIR inspection system to inspect the patterned substrate by focus averaging a plurality of images of the patterned substrate, each image of the patterned substrate corresponding to a respective SWIR wavelength of the plurality of SWIR wavelengths; at least one processing device for A system comprising:

16. 16. The system of claim 15, wherein the metrology data includes at least one of die image data or via image data.

17. To perform the lithography process, the at least one processing device acquiring design data for components arranged on the substrate; scanning a field configuration of the component to obtain field data; identifying at least one offset based on the design data and the field data; expanding at least one connection to the component based on the at least one offset; The system of claim 15 for:

18. The system of claim 17 , wherein the design data includes at least one of coordinate data of the component in a design state or coordinate data of a connection pattern to the component.

19. To perform the lithography process, the at least one processing device acquiring first position data of components and electrical connection patterns disposed on the substrate; scanning the substrate with a microlithography system to obtain second position data; comparing the first location data to the second location data to generate a comparison; expanding the electrical connection pattern based on the comparison to obtain an expanded pattern; producing the expansion pattern; The system of claim 15 for:

20. The system of claim 15 , wherein the multiple images are captured by a single image sensor using the multiple SWIR wavelengths.

Images