System, method, and program product for manufacturing photomask

Abstract

To achieve enhanced pattern fidelity in EUVL and optical lithography for integrated circuit yield.SOLUTION: There are provided methods and systems for building a photomask from obtained pattern information relating to a photomask that exhibits defects on wafer. Spatial domain analysis is conducted on the pattern information so that corrective photomask structures can be generated and applied to a photomask layout. A photomask is built using the corrective photomask structures. The photomask is verified for effectiveness.SELECTED DRAWING: Figure 2

Description

Detailed Description of the Invention

[0001] [CROSS-REFERENCE TO RELATED APPLICATIONS] This application claims the benefit of and priority to U.S. Provisional Patent Application No. 63 / 018,471, filed April 30, 2020, the contents of which are incorporated herein by reference in their entirety. [Technical field] The present invention relates generally to systems and methods for manufacturing photomasks for use in fabricating integrated circuits on silicon wafers. [Background technology] Mask technology is key to enabling advances in high-performance integrated circuit technology nodes for logic and memory processes. Achieving sufficient process window (PW) and ultimate yield, especially when pushing the traditional limits of optical and EUV lithography, is highly dependent on masks. This mask manufacturing limitation creates technical challenges for maximizing the accuracy and consistency of manufactured masks as linewidths become narrower with each new generation of high-performance integrated circuit technology. Wafer verification for mask process improvement can be extremely challenging and time-consuming for fully operational production lines, given the level of effort required to support wafer characterization. Therefore, more efficient and effective methods for improving pattern fidelity would be beneficial to mask manufacturing and lithography engineers. Pattern fidelity includes, but is not limited to, global and local critical dimension uniformity (CDU), corner rounding, high voltage bias, complex 2D pattern reproduction, LER, and resolution enhancement.

[0002] Currently, a toolkit of mask and wafer analysis techniques within lithography-aware LAMA applications can predict wafer defect potential on one-dimensional (1D) and two-dimensional (2D) structures, such as metal, contact, and poly, to optimize mask processes that improve pattern fidelity performance. Contact hole area loss, corner rounding (CR), and xy errors in asymmetric holes caused by mask processing, to name a few, present ongoing challenges for optimization and achieving the desired performance. Furthermore, sub-resolution assist features (SRAFs) present additional challenges that can be addressed using this technology. Resolving these on the mask poses significant challenges, especially when scaling process capacity using previous-generation equipment. A mask development process that overcomes these challenges is needed.

[0003] Furthermore, as IC technology nodes advance, the demands on mask performance also increase, and while traditional tools such as single-beam writing tools may no longer be able to provide the desired results that meet these high standards, at the same time, these traditional tools are not necessarily obsolete for other purposes. Therefore, there is a need to extend the capabilities of traditional tools so that they can be used in areas where higher mask performance is required, such as the EUVL area.

[0004] What is needed is a system and method that can be developed to enable photomasks to overcome the above-mentioned challenges. [Summary of the Invention] The present invention addresses the challenge of improving pattern fidelity in EUVL and optical lithography for integrated circuit yield by providing a litho-aware mask process correction application. This is addressed by a new and improved computerized system and method for photomask fabrication utilizing Litho Aware Mask Process Correction Application (LAMA) technology. As described below, LAMA is a multi-step data flow that improves lithographic performance and yield-related patterning by aligning mask process LAMA fidelity with wafer processing. In embodiments of the LAMA technology, LAMA gauge patterns are designed based on spatial domain analysis of existing photomask data and / or contour extraction analysis of SEM images of previously fabricated masks. The designed LAMA gauge patterns are constructed from corrective photomask structures, which are then incorporated into the mask. In various embodiments, design rule checking and / or pattern matching software is used to determine what structures exist in the mask data, and defects within those structures are quantified using spatial domain analysis, including, but not limited to, pattern description search, shape statistics analysis, and design congestion maps. Thus, structures that may benefit from LAMA are identified. An initial mask is fabricated and used to obtain the mask-level data necessary to determine the optimal correction method for the mask structures. Based on this, a LAMA correction script is applied to generate subsequent mask data. The final mask is then fabricated using the applied LAMA correction. LAMA corrections can be applied during mask process correction, OPC, or any other mask preparation step to generate the mask data used during manufacturing.

[0005] In each embodiment, the method for fabricating a photomask includes: (a) detecting wafer defects from a scanning electron microscope (SEM) image of the wafer; (b) extracting a plurality of mask contours from the SEM image of a pre-fabricated photomask, where the extracted mask contours may correspond to the detected wafer defects; (c) forming a simulated fabricated wafer using the extracted plurality of mask contours; (d) detecting one or more defects on the simulated fabricated wafer; (e) determining one or more potential problem areas of the photomask based on the defects on the simulated fabricated wafer; (f) obtaining pattern information relating to the potential problem areas of the pre-fabricated photomask; (g) performing a spatial domain analysis of the pattern information; and (h) determining a plurality of photomask structure patterns exhibiting one or more corresponding defects based on the spatial domain analysis; and (i) generating a plurality of potentially corrected photomask structure patterns from the plurality of photomask structure patterns analyzed by the spatial domain analysis, where the generating includes: (i) selecting a plurality of treatments to be applied to the plurality of photomask structure patterns exhibiting the one or more corresponding defects; and (ii) for each selected treatment, selecting a treatment. (i) selecting a plurality of correction photomask structure patterns from the plurality of possible correction photomask structure patterns; (ii) applying the selected treatment having the selected parameters to a plurality of photomask structure patterns exhibiting one or more corresponding defects; (iii) (j) incorporating the potential correction photomask structure patterns into a test photomask; (k) analyzing the potential correction photomask structure patterns on the test photomask; (l) selecting a plurality of correction photomask structure patterns from the plurality of possible correction photomask structure patterns; (m) generating one or more photomask pattern correction scripts based on the analysis of the plurality of correction photomask structure patterns on the test photomask; (n) executing the one or more photomask pattern correction scripts to apply one or more of the plurality of correction photomask structure patterns to a full layer photomask layout; (o) fabricating a full layer photomask incorporating one or more of the plurality of correction photomask structure patterns therein based on the final photomask layout; and (p) verifying that the one or more correction photomask structure patterns have been applied to the final photomask.(q) determining that a plurality of locations on a wafer fabricated based on a photomask incorporating one or more of the plurality of correction photomask structure patterns therein do not exhibit defects corresponding to one or more defects from the previously fabricated photomask;

[0006] In each embodiment, the pattern information comprises one or more data files corresponding to the layout of a pre-fabricated photomask.

[0007] In each embodiment, the spatial domain analysis includes (i) performing a pattern description search of the pattern information, (ii) identifying photomask structures from the pattern information based on the pattern description search, and (iii) generating a graph corresponding to the identified photomask structures. In each embodiment, a plurality of photomask structure patterns exhibiting one or more corresponding defects are identified based on the graph corresponding to the identified photomask structures.

[0008] In each embodiment, analyzing the corrected photomask structure pattern on the test photomask includes (i) performing a manufacturing simulation process based on the photomask, and (ii) evaluating the results of the manufacturing simulation process.

[0009] In each embodiment, the potential correction photomask structure patterns are incorporated into unused spaces on the fabricated photomask.

[0010] In each embodiment, the method for fabricating a photomask includes: (a) detecting wafer defects from a scanning electron microscope (SEM) image of the wafer; (b) extracting a plurality of mask contours from the SEM image of a pre-fabricated photomask, the extracted mask contours corresponding to the detected wafer defects; (c) forming a simulated fabricated wafer using the extracted plurality of mask contours; (d) detecting one or more defects on the simulated fabricated wafer; (e) determining one or more problem areas on the pre-fabricated photomask based on the defects on the simulated fabricated wafer; (f) obtaining pattern information related to the problem areas on the pre-fabricated photomask; (g) performing a spatial domain analysis of the pattern information; and (h) determining a plurality of photomask structure patterns exhibiting one or more corresponding defects based on the spatial domain analysis; and (i) generating a plurality of corrected photomask structure patterns from the plurality of photomask structure patterns, the generating including: (i) selecting a plurality of treatments to be applied to the plurality of photomask structure patterns exhibiting the one or more corresponding defects; and (ii) determining the selected treatments. (j) generating one or more photomask pattern correction scripts based on the plurality of corrected photomask structure patterns; (k) executing the one or more photomask pattern correction scripts to apply one or more of the plurality of corrected photomask structure patterns to a photomask layout; (l) fabricating a photomask incorporating one or more of the plurality of corrected photomask structure patterns therein based on a final photomask layout for a layer; (m) verifying that the one or more corrected photomask structures have been applied to the photomask; and (n) determining that a plurality of locations on a wafer fabricated based on a photomask incorporating one or more of the plurality of corrected photomask structure patterns does not exhibit defects corresponding to the one or more defects from the previously fabricated photomask.

[0011] In each embodiment, the pattern information comprises one or more data files corresponding to the layout of a pre-fabricated photomask.

[0012] In each embodiment, the spatial domain analysis includes (i) performing a pattern description search of the pattern information, (ii) identifying photomask structures from the pattern information based on the pattern description search, and (iii) generating a graph corresponding to the identified photomask structures. In each embodiment, a plurality of photomask structure patterns exhibiting one or more corresponding defects are identified based on the graph corresponding to the identified photomask structures.

[0013] In each embodiment, the correction photomask structure pattern is incorporated into unused space on a pre-fabricated photomask.

[0014] In each embodiment, a system for fabricating a photomask includes one or more processing units and a memory, the one or more processing units configured to execute machine-readable instructions that, when executed, cause the system to: (a) detect wafer defects from a scanning electron microscope (SEM) image of the wafer; (b) extract a plurality of mask contours from the SEM image of a pre-fabricated photomask, the extracted mask contours corresponding to the detected wafer defects; (c) form a simulated fabricated wafer using the extracted plurality of mask contours; (d) detect one or more defects on the simulated fabricated wafer; (e) determine one or more potential problem areas of the photomask based on the defects on the simulated fabricated wafer; (f) obtain pattern information related to the potential problem areas of the pre-fabricated photomask; (g) perform a spatial domain analysis of the pattern information; and (h) determine a plurality of photomask structure patterns exhibiting one or more corresponding defects based on the spatial domain analysis; and (i) generate a plurality of potentially corrected photomask structure patterns from the plurality of photomask structure patterns based on the spatial domain analysis. generating a photomask structure pattern, the generating including (i) selecting a plurality of treatments to be applied to the plurality of photomask structure patterns exhibiting one or more corresponding defects; (ii) for each selected treatment, selecting a plurality of parameters corresponding to the treatment; (iii) applying the selected treatment with the selected parameters to the plurality of photomask structure patterns exhibiting the one or more corresponding defects; (j) incorporating potential correction photomask structure patterns into a test photomask; (k) analyzing the potential correction photomask structure patterns on the test photomask; (l) selecting a plurality of correction photomask structure patterns from the plurality of potential correction photomask structure patterns; (m) generating one or more photomask pattern correction scripts based on the analysis of the plurality of correction mask structure patterns on the test photomask; (n) executing the one or more photomask pattern correction scripts to apply one or more of the plurality of correction photomask structure patterns to a full-layer final photomask layout; and (o) based on the final photomask layout.fabricating a full layer photomask incorporating one or more of the plurality of correction photomask structure patterns therein; (p) verifying the one or more correction photomask structures as applied to a final photomask; and (q) determining that a plurality of locations on a wafer fabricated based on a photomask incorporating one or more of the plurality of correction photomask structure patterns therein do not exhibit defects corresponding to one or more defects from a previously fabricated photomask.

[0015] In each embodiment, the pattern information comprises one or more data files corresponding to the layout of a pre-fabricated photomask.

[0016] In each embodiment, the spatial domain analysis includes (i) performing a pattern description search of the pattern information, (ii) identifying photomask structures from the pattern information based on the pattern description search, and (iii) generating a graph corresponding to the identified photomask structures. In each embodiment, a plurality of photomask structure patterns exhibiting one or more corresponding defects are identified based on the graph corresponding to the identified photomask structures.

[0017] In each embodiment, analyzing the corrected photomask structure pattern on the test photomask includes (i) running a manufacturing simulation process based on the test photomask, and (ii) visually inspecting the results of the manufacturing simulation process.

[0018] In each embodiment, the potential correction photomask structure patterns are incorporated into unused spaces on a pre-fabricated photomask.

[0019] In each embodiment, a system for manufacturing a photomask includes one or more processing units and a memory, the one or more processing units configured to execute machine-readable instructions. (e) determine one or more problem areas on the pre-fabricated photomask based on the defects on the simulated wafer; (f) obtain pattern information relating to the problem areas on the pre-fabricated photomask; (g) perform a spatial domain analysis of the pattern information; and (h) determine a plurality of photomask structure patterns exhibiting one or more corresponding defects based on the spatial domain analysis. The machine-readable instructions, when executed, cause the system to: (a) detect wafer defects from a scanning electron microscope (SEM) image of the wafer; (b) extract a plurality of mask contours from an SEM image of a pre-fabricated photomask, the extracted mask contours corresponding to the detected wafer defects; (c) form a simulated fabricated wafer using the extracted plurality of mask contours; (d) detect one or more defects on the simulated fabricated wafer; (e) determine one or more problem areas on the pre-fabricated photomask based on the defects on the simulated fabricated wafer; (f) obtain pattern information relating to the problem areas on the pre-fabricated photomask; (g) perform a spatial domain analysis of the pattern information; and (h) determine a plurality of photomask structure patterns exhibiting one or more corresponding defects based on the spatial domain analysis; and (i) generate a plurality of corrected photomask structure patterns from the plurality of photomask structure patterns, the generating comprising: (i) selecting a plurality of treatments to be applied to the plurality of photomask structure patterns exhibiting the one or more corresponding defects based on the spatial domain analysis; and (ii) obtaining a plurality of corrected photomask structure patterns. (j) generating one or more photomask pattern correction scripts based on the plurality of corrected photomask structure patterns; (k) executing the one or more photomask pattern correction scripts to apply one or more of the plurality of corrected photomask structure patterns to a photomask layout; (l) fabricating a photomask incorporating one or more of the plurality of corrected photomask structure patterns therein based on a final photomask layout for a layer; (m) verifying that the one or more corrected photomask structures have been applied to the photomask; and (n) determining that a plurality of locations on a wafer fabricated based on a photomask incorporating one or more of the plurality of corrected photomask structure patterns does not exhibit defects corresponding to the one or more defects from the previously fabricated photomask.

[0020] In each embodiment, the pattern information comprises one or more data files corresponding to the layout of a pre-fabricated photomask.

[0021] In each embodiment, the spatial domain analysis includes (i) performing a pattern description search of the pattern information, (ii) identifying photomask structures from the pattern information based on the pattern description search, and (iii) generating a graph corresponding to the identified photomask structures. In each embodiment, a plurality of photomask structure patterns exhibiting one or more corresponding defects are identified based on the graph corresponding to the identified photomask structures.

[0022] In each embodiment, the correction photomask structure pattern is incorporated into unused space on a pre-fabricated photomask.

[0023] In each embodiment, the mask design correction system comprises one or more computer systems, each having one or more processors operatively connected to one or more memory devices and a plurality of modules stored in the one or more memory devices and programmed to execute on one or more of the one or more processors, the plurality of modules including: (a) a scanning module configured to: (1) scan a first scanning electron microscope (SEM) image of a layer within the wafer; (2) detect wafer defects from the first SEM image of the wafer; and (3) output locations on the wafer having the wafer defects; (b) a contour extraction module operatively connected to the scanning module, the contour extraction module configured to: (1) obtain locations on the wafer having the wafer defects; and (2) extract a plurality of mask contours from a second SEM image of a pre-fabricated photomask associated with the layer within the wafer, the extracted mask contours corresponding to locations on the pre-fabricated photomask that correspond to the detected wafer defects on the wafer; and (c) a contour extraction module operatively connected to the contour extraction module. (d) a detection module operatively connected to the simulation module, the detection module being configured to (1) obtain the simulated fabricated wafer, (2) detect one or more defects on the simulated fabricated wafer, and (3) output data including the defects on the simulated fabricated wafer; (e) a photomask analysis module operatively connected to the detection module, the photomask analysis module being configured to (1) obtain data including the defects on the simulated fabricated wafer, (2) determine one or more potential problem areas on a pre-fabricated photomask based on the data including the defects on the simulated fabricated wafer, and (3) generate pattern information related to the potential problem areas on the pre-fabricated photomask; and (f) a spatial domain analysis module operatively connected to the photomask analysis module, (g) a pattern identification module operatively connected to the spatial domain analysis module, the pattern identification module being configured to: (1) obtain results of the spatial domain analysis; (2) determine a plurality of photomask structure patterns exhibiting one or more corresponding defects based on the results of the spatial domain analysis; and (3) output data corresponding to the plurality of photomask structure patterns exhibiting the one or more corresponding defects; and (h) a pattern generation module operatively connected to the pattern identification module, the pattern generation module being configured to: (1) obtain data corresponding to the plurality of photomask structure patterns exhibiting one or more corresponding defects; (2) select a plurality of treatments to be applied to the plurality of photomask structure patterns exhibiting the one or more corresponding defects; (3) select, for each selected treatment, a plurality of parameters corresponding to the treatment; and (4) generate the selected treatment with the selected parameters.(5) generate a plurality of potential correction photomask structure patterns from the plurality of photomask structure patterns based on the spatial domain analysis, (6) incorporate the potential correction photomask structure patterns into a test photomask, (7) analyze the potential correction photomask structure patterns on the test photomask, and (8) select and output a plurality of correction photomask structure patterns from the plurality of potential correction photomask structure patterns; and (i) a script module operatively connected to the pattern selection module, the script module being configured to: (1) obtain the plurality of correction photomask structure patterns, (2) generate one or more photomask pattern correction scripts based on the plurality of correction photomask structure patterns, and (3) execute the one or more photomask pattern correction scripts to apply one or more of the plurality of correction photomask structure patterns to the photomask layout.

[0024] In each embodiment, the pattern information comprises one or more data files corresponding to the layout of a pre-fabricated photomask.

[0025] In each embodiment, the spatial domain analysis includes (i) performing a pattern description search of the pattern information, (ii) identifying photomask structures from the pattern information based on the pattern description search, and (iii) generating a graph corresponding to the identified photomask structures. In each embodiment, a plurality of photomask structure patterns exhibiting one or more corresponding defects are identified based on the graph corresponding to the identified photomask structures.

[0026] In each embodiment, analyzing the corrected photomask structure pattern on the test photomask includes (i) running a manufacturing simulation process based on the test photomask, and (ii) visually inspecting the results of the manufacturing simulation process.

[0027] In each embodiment, the potential correction photomask structure patterns are incorporated into unused spaces on a pre-fabricated photomask.

[0028] In each embodiment, the mask design correction system includes one or more computer systems, each having one or more processors operatively connected to one or more memory devices and a plurality of modules stored in the one or more memory devices and programmed to execute on one or more of the one or more processors, the plurality of modules including: (a) a scanning module configured to: (1) scan a first scanning electron microscope (SEM) image of a layer within the wafer; (2) detect wafer defects from the first SEM image of the wafer; and (3) output locations on the wafer having the wafer defects; and (b) a contour extraction module operatively connected to the scanning module, configured to: (1) obtain locations on the wafer having the wafer defects; and (2) extract a plurality of mask contours from a second SEM image of a pre-fabricated photomask associated with the layer within the wafer, the extracted mask contours corresponding to locations on the pre-fabricated photomask that correspond to the detected wafer defects of the wafer. (c) a simulation module operatively connected to the contour extraction module, the simulation module configured to (1) acquire a plurality of extracted mask contours and (2) form a simulated fabricated wafer using the extracted plurality of mask contours; (d) a detection module operatively connected to the simulation module, the detection module configured to (1) acquire the simulated fabricated wafer, (2) detect one or more defects on the simulated fabricated wafer, and (3) output data including the defects on the simulated fabricated wafer; and (e) a photomask analysis module operatively connected to the detection module, the photomask analysis module configured to (1) acquire data including the defects on the simulated fabricated wafer, (2) determine one or more potential problem areas on a pre-fabricated photomask based on the data including the defects on the simulated fabricated wafer, and (3) generate pattern information related to the potential problem areas on the pre-fabricated photomask.(f) a spatial domain analysis module operatively connected to the photomask analysis module, the spatial domain analysis module being configured to: (1) obtain pattern information related to problem areas of a pre-fabricated photomask, (2) perform a spatial domain analysis of the pattern information, and (3) output results of the spatial domain analysis; (g) a pattern identification module operatively connected to the spatial domain analysis module, the pattern identification module being configured to: (1) obtain results of the spatial domain analysis, (2) determine a plurality of photomask structure patterns exhibiting one or more corresponding defects based on the results of the spatial domain analysis, and (3) output data corresponding to the plurality of photomask structure patterns exhibiting one or more corresponding defects; and (h) a pattern generation module operatively connected to the pattern identification module, the pattern generation module being configured to: (1) obtain data corresponding to the plurality of photomask structure patterns exhibiting one or more corresponding defects, and (2) determine a plurality of photomask structure patterns exhibiting one or more corresponding defects. (3) for each selected action, select a plurality of parameters corresponding to the action; (4) apply the selected action with the selected parameters to the plurality of photomask structure patterns exhibiting the one or more corresponding defects; and (5) generate a plurality of corrected photomask structure patterns from the plurality of photomask structure patterns based on the spatial domain analysis; and (i) a script module operatively connected to the pattern generation module, the script module configured to: (1) obtain the plurality of corrected photomask structure patterns; (2) generate one or more photomask pattern correction scripts based on the plurality of corrected photomask structure patterns; and (3) execute the one or more photomask pattern correction scripts to apply one or more of the plurality of corrected photomask structure patterns to the photomask layout.

[0029] In each embodiment, the pattern information comprises one or more data files corresponding to the layout of a pre-fabricated photomask.

[0030] In each embodiment, the spatial domain analysis includes (i) performing a pattern description search of the pattern information, (ii) identifying photomask structures from the pattern information based on the pattern description search, and (iii) generating a graph corresponding to the identified photomask structures. In each embodiment, a plurality of photomask structure patterns exhibiting one or more corresponding defects are identified based on the graph corresponding to the identified photomask structures.

[0031] In each embodiment, the correction photomask structure pattern is incorporated into unused space on a pre-fabricated photomask. [Brief explanation of the drawings]

[0032] Exemplary embodiments of the present invention will now be described with reference to the accompanying drawings. [Figure 1] FIG. 1 illustrates a system for correcting a mask design according to embodiments of the present invention. [Figure 2] FIG. 2 depicts a flow diagram of a process flow for fabricating a photomask according to an exemplary embodiment of the present invention. [Figure 3A] FIG. 3A shows a flow diagram of a process for fabricating a photomask according to an exemplary embodiment of the present invention. [Figure 3B] FIG. 3B shows a flow diagram of a process for fabricating a photomask according to an exemplary embodiment of the present invention. [Figure 3C] FIG. 3C shows a flow diagram of a process for fabricating a photomask according to an exemplary embodiment of the present invention. [Figure 4] FIG. 4 illustrates an exemplary algorithm performed on a contour extraction tool by an SEM image, according to an exemplary embodiment of the present invention. [Figure 5] FIG. 5 is an example of an output log file to a SEM image contour extraction tool, according to an exemplary embodiment of the present invention. [Figure 6] FIG. 6 illustrates sample options used when launching an SEM image into a contour extraction tool, according to an exemplary embodiment of the present invention. [Figure 7] FIG. 7 shows a smoothed and pixelated contour generated by a SEM image to contour extraction tool, according to an exemplary embodiment of the present invention. [Figure 8] 8(a), 8(b), and 8(c) illustrate a process for obtaining pattern information from an SEM image according to an exemplary embodiment of the present invention. [Figure 9] FIG. 9 depicts an example of computer code for performing pattern searching according to an exemplary embodiment of the present invention. [Figure 10] FIG. 10 depicts exemplary data analysis computer code according to an exemplary embodiment of the present invention. [Figure 11] FIG. 11 illustrates an exemplary process for generating one or more photomask structure patterns that exhibit one or more defects, according to an exemplary embodiment of the present invention. [Figure 12] FIG. 12 illustrates a table of corner rounding enhancements and horizontal / vertical biases that are applied to a photomask structure pattern to generate potential corrected photomask structure patterns according to an exemplary embodiment of the present invention. [Figure 13] FIG. 13 illustrates a table of exposure dose adjustments that are applied at different times to different photomask structures to generate a set of possible corrected photomask structures, according to an exemplary embodiment of the present invention. [Figure 14] FIG. 14 illustrates space pitch and line pitch designs that are applied to different photomask structures to generate a set of possible corrected photomask structures, according to an exemplary embodiment of the present invention. [Figure 15] FIG. 15 illustrates line-end and space-end designs that are applied to different photomask structures to generate a set of possible corrected photomask structures, according to an exemplary embodiment of the present invention. [Figure 16] FIG. 16 illustrates an orthogonal array of DOT / hole designs that are applied to different photomask structures to generate a set of possible corrected photomask structures, according to an exemplary embodiment of the present invention. [Figure 17] FIG. 17 illustrates a staggered DOT / hole design that is applied to different photomask structures to generate a set of possible corrected photomask structures, according to an exemplary embodiment of the present invention. [Figure 18] FIG. 18 illustrates a table containing rules for applying corrective actions to one or more photomask structures, according to an exemplary embodiment of the present invention. [Figure 19] FIG. 19 illustrates a comparison between SEM images of different photomasks, one that has not undergone any treatment and one that has undergone treatment with a corrective photomask structure, according to an exemplary embodiment of the present invention. [Figure 20] FIG. 20 illustrates improved contact between a treated and untreated mask, according to an exemplary embodiment of the present invention. [Figure 21] FIG. 21 illustrates a comparison between SEM images of different photomasks, one that has not undergone any treatment and one that has undergone treatment with a corrective photomask structure, according to an exemplary embodiment of the present invention. DETAILED DESCRIPTION OF THE INVENTION

[0033] [Detailed Description of the Invention] The present invention generally relates to a system and method for making masks that addresses problems in fabricating integrated circuits on wafers using EUV and optical lithography.

[0034] In each embodiment, a LAMA characterization technique using contour extraction can be used to characterize the process improvements and predict wafer performance. The required mask process improvements include both physical mask process components and write data optimization techniques, i.e., Mask Process Correction (MPC).

[0035] Mask pattern fidelity is particularly important in EUVL. In each embodiment, simultaneous mask and wafer process development using LAMA techniques has demonstrated improved mask fidelity for 1D structures with contact holes, as shown in Figure 19, but the problem is essentially with 2D structures. This phenomenon results in high local CD uniformity (LCDU) errors on the photomask, which in turn leads to LCDU errors on the wafer. This can be somewhat mitigated by LAMA processing techniques, as shown in Figure 21.

[0036] 1 illustrates a block diagram of a system for correcting a mask design according to various embodiments. The system for correcting a mask design 100 can be implemented using one or more desktop computers, server-class computers, laptop computers, tablets, and smartphones, to name a few (hereinafter referred to as the "mask design correction system"). The one or more computing devices can be connected to each other within a wired or wireless local area network, a wide area network, the Internet, or via a cloud computing platform, to name a few.

[0037] As shown in this figure, the system for correcting a mask design 100 includes a scanning module 105. In each embodiment, the scanning module 105 scans a first scanning electron microscope (SEM) image of a layer within a wafer. The system is configured to scan a first SEM image of the wafer, detect wafer defects from the first SEM image of the wafer, and output locations on the wafer having the wafer defects. The contour extraction module 110 is configured to obtain locations on the wafer having the wafer defects and extract a plurality of mask contours from a second SEM image of a pre-fabricated photomask associated with the layer of the wafer, where the extracted mask contours correspond to locations on the wafer on the pre-fabricated photomask that correspond to the detected wafer defects. The simulation module 115 is configured to obtain the extracted plurality of mask contours and form a simulated fabricated wafer using the extracted plurality of mask contours. The detection module 120 is configured to obtain the simulated fabricated wafer, detect one or more defects on the simulated fabricated wafer, and output data including the defects on the simulated fabricated wafer. The photomask analysis module 125 is configured to obtain data including the defects on the simulated fabricated wafer, determine one or more potential problem areas on the pre-fabricated photomask based on the data including the defects on the simulated fabricated wafer, and generate pattern information related to the potential problem areas on the pre-fabricated photomask. The spatial domain analysis module 130 is configured to obtain pattern information relating to potential problem areas of a pre-fabricated photomask, perform a spatial domain analysis of the pattern information, and output spatial domain analysis results. The pattern identification module 135 is configured to obtain the spatial domain analysis results, determine a plurality of photomask structure patterns exhibiting one or more corresponding defects based on the spatial domain analysis results, and output data corresponding to the plurality of photomask structure patterns exhibiting one or more corresponding defects.The pattern generation module 140 is configured to acquire data corresponding to a plurality of photomask structure patterns exhibiting one or more corresponding defects, select a plurality of actions to apply to the plurality of photomask structure patterns exhibiting the one or more corresponding defects, select, for each selected action, a plurality of parameters corresponding to the action, apply the selected action using the selected parameters to the plurality of photomask structure patterns exhibiting the one or more corresponding defects, generate a plurality of potential correction photomask structure patterns from the plurality of photomask structure patterns based on a spatial domain analysis, incorporate the potential correction photomask structure patterns into a test photomask, analyze the potential correction photomask structure patterns on the test photomask, and select and output the plurality of correction photomask structure patterns from the plurality of potential correction photomask structure patterns. The script module 145 is configured to acquire the plurality of correction photomask structure patterns, generate one or more photomask pattern correction scripts based on the plurality of correction photomask structure patterns, and apply one or more of the plurality of correction photomask structure patterns to the photomask layout by executing the one or more photomask pattern correction scripts.

[0038] FIG. 2 is a flow diagram of a process flow according to an exemplary embodiment of the present invention. The illustrated process flow illustrates steps performed by an embodiment of a system for correcting a mask design, such as the system 100 illustrated in FIG. 1. The process flow includes a data analysis step, in which a spatial domain analysis is performed to identify mask structures requiring correction. SEM image contour analysis may also be performed. A LAMA gauge pattern design and embedding step designs a LAMA pattern based on the data analysis and incorporates the pattern into a test mask. A LAMA pattern analysis and solution construction step analyzes the LAMA pattern on the test mask and constructs a customized LAMA solution. The LAMA pattern is then applied to a mask layout to fabricate and verify the final mask. Finally, contour extraction is performed to evaluate the predicted wafer performance of the final mask.

[0039] 3A-3C illustrate a process flow of a method 300 according to an exemplary embodiment of the present invention. In each embodiment, the illustrated process flow may be implemented on one or more computing devices, such as one or more desktop computers, server-class computers, or the like, to name a few. The mask design correction system may be implemented by a computer, laptop computer, tablet, smartphone, etc. (hereinafter referred to as a "mask design correction system"). The one or more computing devices may be connected to each other within a wired or wireless local area network, a wide area network, the Internet, or via a cloud computing platform, to name a few. In each embodiment, the network is a secure network.

[0040] Method 300 begins at step S30. In step S302, in various embodiments, spatial domain analysis is used to identify potential weaknesses in a layer within a wafer and / or an SEM image analyzed by a mask design correction system performing the method. The mask design correction system analyzes the SEM image of the wafer for defects, such as open lines and small bridges, to name a few. Other defects may be present that can be addressed without departing from the scope or spirit of the present invention. In various embodiments, the identified defects may be used to identify corresponding areas in a photomask design that are analyzed and / or corrected. In various embodiments, step S302 may be replaced by other processes capable of identifying possible hot spots or weaknesses or errors in a layer of a wafer.

[0041] In step S304, in embodiments, the mask design correction system extracts a mask contour from the SEM image of the photomask, where the photomask is a corresponding photomask used to fabricate a wafer. In embodiments, when an SEM image of a wafer is used in step S302, the photomask corresponds to a layer within the wafer associated with the SEM image of the wafer. In embodiments where other processes are used to identify hot spots within a layer of a wafer, the photomask corresponds to a layer within the wafer associated with the identified hot spot(s). According to embodiments, the mask contour is extracted based on an area identified in the SEM image that exhibits defects. In embodiments, the extraction may be based on the SEM image of the photomask and / or design data for the photomask, to name a few.

[0042] Next, in step S306, the mask design correction system uses the extracted mask contour as input to launch a manufacturing simulation process that produces a simulated fabricated wafer that can then be analyzed for defects similar to those detected on the physical wafer in step S302 or other identified actual and / or potential hot spots.

[0043] In step S308, the mask design correction system detects one or more defects on the simulated wafer. The mask design correction system can detect defects or potential weaknesses by utilizing visual inspection tools, optical inspection tools, critical dimension measurement tools, to name a few.

[0044] In step S310, the mask design correction system determines one or more potential problem areas on the photomask based on the defects detected using the LAMA mask-wafer alignment simulation. In each embodiment, the location of the one or more potential problem areas may be identified within the mask design for each layer for further analysis and correction.

[0045] Method 300 then proceeds to step S312, where pattern information relating to one or more potential problem areas of the photomask identified in step S310 is obtained by a mask design correction system. In each embodiment, the pattern information may be in the form of one or more data files describing the layout of a pre-manufactured photomask exhibiting the identified defects. In each embodiment, the pattern information is obtained by a mask design correction system. A design may be identified as containing design elements that, if manufactured, are expected to exhibit defects if not corrected.

[0046] In various embodiments, pattern information can be obtained using a scanning electron microscope (SEM) contouring analysis of an existing photomask. This can be achieved using an SEM image to a contouring tool that executes a contouring algorithm, such as the LAMA contouring tool algorithm illustrated in FIG. 4. In various embodiments, other contouring algorithms can be used without departing from the scope or spirit of the present invention. FIG. 5 shows an example of an output log file for a LAMA SEM image to a contouring tool. FIG. 6 shows sample options used when invoking the LAMA SEM image to contouring tool, where the tool is invoked from a command line interface on a computing device. As shown, available options include pixel selection tolerance, use of smoothing value, color tone, ignore area size, background area size, and X and Y scale, to name a few. In various embodiments, other variations in wafer fabrication process steps and material selection can be used without departing from the scope or spirit of the present invention. In various embodiments, the SEM image to contouring tool can produce a smoothed, pixelated contour, as illustrated in FIG. 7.

[0047] FIGS. 8(a), 8(b), and 8(c) illustrate the process of obtaining pattern information from an SEM image. As shown, FIG. 8(a) shows an SEM image of a mask contour. The mask contour represents at least a portion of the mask design associated with a potential problem area, or "hot spot," or "weak point," on the mask, as determined in step S310. FIG. 8(b) shows a high intensity map extracted from the image of FIG. 8(a) by SEM imaging to contour extraction associated with at least a portion of the mask design associated with the potential problem area on the mask. The high intensity map enables a mask design correction system to identify specific areas of the mask where correction is likely to be beneficial. After identifying these areas, the mask design correction system generates a mask design file (e.g., OASIS / GDS, shown in FIG. 8(c)) or any layout format file. The Open Artwork System Interchange Standard (OASIS) is a specification for a hierarchical integrated circuit mask layout data format for interchange between EDA (Electronic Design Automation) software, IC mask writing tools, and mask inspection tools. The OASIS file stores mask layout information (including mask pattern information) for subsequent analysis. Other layout data formats may be used without departing from the scope or spirit of the present invention.

[0048] After acquiring the pattern information in step S312, method 300 proceeds to step S314. In step S314 of method 300, the mask design correction system may perform a spatial domain analysis on the acquired pattern information. According to various embodiments, the spatial domain analysis is performed by performing a pattern description search, which uses big data analytics to extract patterns from the pattern information. Sample data analysis tools can be used to perform the pattern search using available commercially available EDA tools. In various embodiments, the pattern search can be referred to as a design rule check (DRC), a mask rule check (MRC), or pattern matching (PM), to name a few. An example of pattern search code for a commercially available EDA tool is illustrated in FIG. 9. Other pattern search codes may be used without departing from the scope or spirit of the present invention. Input to the pattern description search software may include pattern information, such as incoming device semiconductor data. Other input data may be used in conjunction with the pattern information without departing from the scope or spirit of the present invention.

[0049] Once the pattern description search is performed, in embodiments, the extracted patterns may then be analyzed by the mask design correction system using, for example, data analysis code, an example of which is shown in Figure 10. In embodiments, the data analysis code outputs results indicating areas / structures on the photomask where LAMA may be effective.

[0050] These and other analytical techniques may be used without departing from the scope or spirit of the present invention.

[0051] 3, after performing the spatial domain analysis in step S314, method 300 proceeds to step S316. In step S306, in each embodiment, the mask design correction system determines, based on the spatial domain analysis of the pattern information, one or more photomask structure patterns that exhibit one or more potential weaknesses, and which structures may benefit from the application of LAMA. Examples of potential weaknesses and / or treatments may include corner rounding, horizontal and vertical offsets, and exposure dose adjustments, to name a few. Other potential weaknesses and / or treatments may be appropriate for LAMA correction without departing from the scope or spirit of the present invention.

[0052] In various embodiments, the mask design correction system generates one or more photomask structure patterns indicating one or more potential weaknesses, for example, based on space / line space sampling performed on a customer's upcoming product. Other potential weaknesses may also be generated without departing from the scope or spirit of the present invention. As shown in FIG. 11 , the space / line space sampling data is input into a Python script, which generates various patterns based on the data. As shown in FIG. 11 , the generated patterns may include horizontal / vertical standard line pitch, horizontal / vertical line edges, orthogonal / staggered DOTs, horizontal / vertical standard space pitch, horizontal / vertical space edges, orthogonal / staggered CNTs, and structures commonly incorporated into logic and memory designs, to name a few.

[0053] After identifying one or more photomask structure patterns exhibiting one or more defects, method 300 proceeds to step S318. In step S318, in various embodiments, a mask design correction system generates one or more potential correction photomask structure patterns based on the photomask structure patterns identified in step S316. In various embodiments, the potential correction photomask structures are generated for one or more layers of the photomask corresponding to the pattern information obtained in step S312. In various embodiments, step S318 involves designing and generating a Litho-Aware Mask Process Correction Application (LAMA) gauge based on data analysis. The LAMA gauge includes potential correction structures for use in fabricating test photomasks. Inputs to step S318 include both manufacturing know-how and data from wafer manufacturers and data extracted from data analysis. For example, manufacturing know-how can include constraints of the manufacturing process in which the photomask is used. Manufacturing data can include minimum space and width parameters, corner-to-corner measurements, and / or mask process fidelity assessments (corner rounding, corner recession, pitch), to name a few. The results of the data analysis used in generating the corrected photomask structure pattern may include, to name a few, spatial domain data of the customer design, anchor / limiting structures, and / or ranges of critical dimensions and design features observed in the LAMA gauge.

[0054] In each embodiment, the mask design correction system selects a plurality of treatments to be applied to a plurality of photomask structure patterns exhibiting one or more corresponding defects. For each selected treatment, the mask design correction system selects a plurality of parameters corresponding to that treatment. After selecting an action and its corresponding parameters, the mask design correction system applies the selected action along with the selected parameters to a plurality of photomask structure patterns exhibiting one or more corresponding defects. In this manner, the mask design correction system generates new photomask structure patterns based on the pattern information. Various actions are possible, including, for example, corner rounding and exposure dose adjustment. By applying multiple actions to the defective photomask pattern structures, the mask design correction system generates a plurality of photomask structure patterns that may be able to correct the defects.

[0055] In embodiments, if a test mask is used, multiple potential correction structures may be identified and used on the test mask, as described below. In embodiments, if a fully formed photomask for a layer is used, specific correction structures may be selected and applied in the fully formed photomask design for that layer and then directly applied in photomask fabrication. In embodiments, a combination of these techniques may be used, such as printing a fully formed photomask design for a layer in combination with one or more potential correction structures in unused portions of the photomask.

[0056] In each embodiment, the LAMA gauge can be designed to adjust the exposure dose for smaller features to provide corner rounding for improved resolution. Additionally, intact patterns can be used to assess fidelity and define photomask limits. Examples of LAMA gauge designs that can be used to generate potential corrected photomask structure patterns are shown in Figures 12-17 below. Other LAMA gauges may be designed and / or applied without departing from the scope or spirit of the present invention.

[0057] FIG. 12 illustrates a table of corner rounding emphasis and horizontal / vertical bias applied to photomask structure patterns to generate potential corrected photomask structure patterns. Similarly, FIG. 13 illustrates a table of exposure dose adjustments applied at different times to different photomask structures to generate a set of potential corrected photomask structures. FIG. 14 illustrates space pitch and line pitch designs applied to different photomask structures to generate a set of potential corrected photomask structures. FIG. 15 illustrates line end and space end designs applied to different photomask structures to generate a set of potential corrected photomask structures. FIG. 16 illustrates an orthogonal DOT / hole design applied to different photomask structures to generate a set of potential corrected photomask structures. FIG. 17 illustrates a staggered DOT / hole design applied to different photomask structures to generate a set of potential corrected photomask structures. These LAMA gauge designs represent examples of potential corrected photomask structures corresponding to structures exhibiting one or more weaknesses identified in the pattern information. The LAMA gauge patterns may be customized in size for versatility and ease of placement in any unused space on the photomask, thereby reducing additional mask costs. One or more of these LAMA gauge designs, and / or other LAMA gauge designs, may be used to generate one or more possible corrected photomask structures without departing from the scope or spirit of the present invention.

[0058] Next, in step S320, the potential corrected photomask structure patterns are incorporated into the photomask design. According to various embodiments, in this step, the mask design correction system execution method 300 reads the LAMA gauge design containing the potential corrected photomask structures and applies the design elements to the photomask data that defines how the photomask can be fabricated. According to various embodiments, the potential corrected photomask structure patterns are incorporated into the photomask design. The resulting photomask structure is incorporated into unused space on the existing photomask layout.

[0059] In step S322, the mask design correction system analyzes the potential corrected photomask structure patterns on the test photomask. According to various embodiments, the mask design correction system may perform simulation and / or visual inspection using an SEM tool, CD tool, or any other optical inspection tool on the photomask data already incorporating the corrected photomask structures to determine whether the potential problem areas indicated in the pattern information have already been corrected and / or modified in an optimized and / or acceptable manner.

[0060] In step S324, the mask design correction system selects a subset comprising a plurality of corrected photomask structure patterns from the plurality of possible corrected photomask structure patterns. The selection of the corrected photomask structure pattern is based on the analysis performed in step S322. In each embodiment, the possible corrected photomask structure exhibiting the highest degree of correction of the identified defect is selected. In each embodiment, the selected corrected photomask structure may be an interpolation between two possible corrected photomask structure patterns. That is, the interpolated corrected photomask structure pattern is a combination of adjacent patterns that is determined to be a more effective solution to the identified defect.

[0061] Next, in step S326, the mask design correction system generates one or more photomask pattern correction scripts based on the analysis of the test photomask. According to various embodiments, the mask design correction system builds one or more tables containing rules for applying corrective actions to one or more photomask structures. An example of such a table is shown in FIG. 18. As shown, the table in FIG. 18 provides a set of MRC rules (corner rounding rules in this example) to be applied to the test photomask. The table in FIG. 18 is based on the corrected photomask structure pattern selected in step S324 and incorporated into the test photomask. The mask design correction system generates one or more photomask pattern correction scripts based on the rules defined in the one or more tables. In various embodiments, the scripts are generated in the NCS language. The scripts may also be generated in the Python programming language or any other EDA scripting language. Other scripting or programming languages ​​may be used without departing from the scope or spirit of the present invention.

[0062] Next, in step S328, the mask design correction system executes one or more photomask pattern correction scripts to apply the corrected photomask structures to a photomask layout that may be used to form the desired IC structure. Referring to Figure 18, executing the corresponding script generated from the table will apply the rules set forth in the table to a photomask layout that may be used to form the final photomask. Other scripts may be used without departing from the scope or spirit of the present invention.

[0063] In various exemplary embodiments, the corrected photomask structure can be laid out on a reticle plate in any suitable manner. For example, multiple correction mask patterns can be formed on the plate, such that each layer of a semiconductor device can be formed using one or more of the correction mask patterns. It should further be appreciated that the correction mask patterns can be applied to a test mask that does not contain or contains only a portion of the mask patterns intended for the final mask design, or can be applied to a final mask that incorporates the entire layer patterns intended for use in manufacturing an IC product. Also, in exemplary embodiments, the correction masks on the mask can be applied during the IC manufacturing process. Not all of the mask patterns may be used, and only the correction mask pattern that provides the best correction may be used, even though other correction patterns may be present on the mask.

[0064] In step S330, a final photomask incorporating the complete design for the layer is physically fabricated based on the final photomask layout for the full layer according to photomask fabrication techniques known in the art.

[0065] In embodiments, the final mask design, including a full layer incorporating the selected correction pattern, and the correction mask pattern associated with only a portion of the full layer may be printed on the same photomask. In such embodiments, the full layer may be delivered to the customer with the correction pattern or similar design elements potentially corrected and inspected for use in future versions of the layer's photomask. In such embodiments, the interim step of fabricating and analyzing a separate test mask may be omitted.

[0066] In step S332, the mask design correction system verifies whether one or more corrected photomask features are ready to be applied to the final photomask. According to various embodiments, the mask design correction system may utilize a critical dimension (CD) inspection tool to analyze the resulting final photomask for corner rounding and horizontal / vertical deviations, to name a few. The mask design correction system uses the CD inspection tool to extract an SEM contour or SEM image of the mask into a contour extraction tool and compares the contour to the final photomask layout design.

[0067] In step S334, the mask design correction system determines that multiple locations on a wafer fabricated based on the final photomask do not exhibit defects corresponding to one or more defects that were identified on the prefabricated photomask. In various embodiments, multiple locations on the final photomask may be selected and compared to corresponding locations on a prefabricated wafer fabricated using an untreated photomask. The treated and untreated photomask wafers are compared both visually and using analytical tools. For example, FIG. 21 illustrates a comparison of an SEM image of an untreated photomask with an SEM image of a photomask treated with a LAMA pattern corrected for hole structures. As shown, the treated photomask does not exhibit any missing patterns or enhanced LCDUs, and more closely matches the mask design specifications.

[0068] 19 illustrates a comparison between SEM images of different photomasks, one that has not undergone any treatment and one that has undergone treatment with the corrected photomask structure selected in step S324. As shown, the treated photomask has no breaks and the linewidth and spacing more closely matches the mask design specifications.

[0069] Figure 20 illustrates the improvement in contact holes between the treated and untreated masks. As shown, the contour of the untreated mask shows more recessed corners compared to the treated mask.

[0070] These and other improvements can be obtained by using a corrected LAMA pattern in accordance with the present invention.

[0071] Having shown and described in detail various embodiments of the present invention, various modifications and improvements thereon will become readily apparent to those skilled in the art. Accordingly, the exemplary embodiments of the present invention, as set forth above, are intended to be illustrative and not limiting. The spirit and scope of Ming is to be interpreted broadly.

Claims

1. 1. A method for manufacturing a photomask, comprising: (a) detecting wafer defects from a scanning electron microscope (SEM) image of the wafer; (b) extracting a plurality of mask contours from an SEM image of a pre-fabricated photomask, the extracted mask contours corresponding to the detected wafer defects; (c) forming a simulated wafer using the extracted mask contours; (d) detecting one or more defects on the simulated wafer; (e) determining one or more problem areas of the photomask based on the defects on the simulated wafer; (f) obtaining pattern information relating to the potential problem areas of the pre-fabricated photomask; (g) performing a spatial domain analysis of the pattern information; (h) determining a plurality of photomask structure patterns exhibiting one or more corresponding defects based on the spatial domain analysis; (i) generating a plurality of possible corrected photomask structure patterns from the plurality of photomask structure patterns based on the spatial domain analysis, said generating comprising: (i) selecting a plurality of treatments to be applied to the plurality of photomask structure patterns exhibiting one or more corresponding defects; (ii) for each selected procedure, selecting a plurality of parameters corresponding to the procedure; (iii) applying the selected treatment having the selected parameters to the plurality of photomask structure patterns exhibiting one or more corresponding defects; (j) incorporating the potential correction photomask structure pattern into a test photomask; (k) analyzing the potential correction photomask structure pattern on the test photomask; (l) selecting a plurality of correction photomask structure patterns from the plurality of possible correction photomask structure patterns; (m) generating one or more photomask pattern correction scripts based on the analysis of the plurality of correction mask structure patterns on the test photomask; (n) executing the one or more photomask pattern correction scripts to apply one or more of the plurality of corrected photomask structure patterns to a full layer photomask layout; (o) fabricating the full-layer photomask incorporating therein the one or more of the plurality of corrected photomask structure patterns based on the final photomask layout; (p) verifying that the one or more corrective photomask structures have been applied to the final photomask; (q) determining that a plurality of locations on a wafer fabricated based on the photomask incorporating therein the one or more of the plurality of correction photomask structure patterns do not exhibit defects corresponding to the one or more defects from a previously fabricated photomask.

2. The method of claim 1 , wherein the pattern information comprises one or more data files corresponding to layouts of pre-fabricated photomasks.

3. The spatial domain analysis includes: (i) performing a pattern description search of the pattern information; (ii) identifying a photomask structure from the pattern information based on the pattern description search; In particular, The method of claim 1 , further comprising: (iii) generating a graph corresponding to the identified photomask structures.

4. The method of claim 3 , wherein the plurality of photomask structure patterns exhibiting one or more corresponding defects are identified based on the graph corresponding to the identified photomask structure.

5. analyzing the correction photomask structure pattern on the test photomask, (i) running a manufacturing simulation process based on the photomask; The method of claim 1 , further comprising: (ii) evaluating results of the manufacturing simulation process.

6. The method of claim 1 , wherein the potential correction photomask structure patterns are embedded in unused spaces on a fabricated photomask.

7. 1. A method for manufacturing a photomask, comprising: (a) detecting wafer defects from a scanning electron microscope (SEM) image of the wafer; (b) extracting a plurality of mask contours from an SEM image of a pre-fabricated photomask, the extracted mask contours corresponding to the detected wafer defects; (c) forming a simulated wafer using the extracted mask contours; (d) detecting one or more defects on the simulated wafer; (e) determining one or more problem areas of the pre-fabricated photomask based on the defects on the simulated wafer; (f) obtaining pattern information relating to the problem area of ​​the pre-fabricated photomask; (g) performing a spatial domain analysis of the pattern information; (h) determining a plurality of photomask structure patterns exhibiting one or more corresponding defects based on the spatial domain analysis; (i) generating a plurality of corrected photomask structure patterns from the plurality of photomask structure patterns based on the spatial domain analysis, said generating comprising: (i) selecting a plurality of treatments to be applied to the plurality of photomask structure patterns exhibiting one or more corresponding defects; (ii) for each selected procedure, selecting a plurality of parameters corresponding to the procedure; (iii) applying the selected treatment having the selected parameters to the plurality of photomask structure patterns exhibiting one or more corresponding defects; (j) generating one or more photomask pattern correction scripts based on the plurality of corrected photomask structure patterns; (k) executing the one or more photomask pattern correction scripts to apply one or more of the plurality of corrected photomask structure patterns to a photomask layout; (l) fabricating a photomask incorporating therein the one or more of the plurality of corrected photomask structure patterns based on the final photomask layout for a layer; (m) verifying that the one or more correction photomask structures remain applied to the photomask; (n) determining that a plurality of locations on a wafer fabricated based on the photomask incorporating therein the one or more of the plurality of correction photomask structure patterns do not exhibit defects corresponding to the one or more defects from a previously fabricated photomask.

8. The method of claim 7 , wherein the pattern information comprises one or more data files corresponding to layouts of pre-fabricated photomasks.

9. The spatial domain analysis includes: (i) performing a pattern description search of the pattern information; (ii) identifying a photomask structure from the pattern information based on the pattern description search; The method of claim 7 , further comprising: (iii) generating a graph corresponding to the identified photomask structures.

10. 10. The method of claim 9, wherein the plurality of photomask structure patterns exhibiting one or more corresponding defects are identified based on the graph corresponding to the identified photomask structure.

11. The method of claim 7 , wherein the correction photomask structure pattern is embedded in an unused space on a pre-fabricated photomask.

12. 1. A system for manufacturing a photomask, comprising: one or more processing units; and a memory, wherein the one or more processing units are configured to execute machine-readable instructions that, when executed, provide the system with: (a) detecting wafer defects from a scanning electron microscope (SEM) image of the wafer; (b) extracting a plurality of mask contours from an SEM image of a pre-fabricated photomask, the extracted mask contours corresponding to the detected wafer defects; (c) forming a simulated wafer using the extracted mask contours; (d) detecting one or more defects on the simulated wafer; (e) determining one or more problem areas of the photomask based on the defects on the simulated wafer; (f) obtaining pattern information relating to the potential problem areas of the pre-fabricated photomask; (g) performing a spatial domain analysis of the pattern information; (h) determining a plurality of photomask structure patterns exhibiting one or more corresponding defects based on the spatial domain analysis; (i) generating a plurality of possible corrected photomask structure patterns from the plurality of photomask structure patterns based on the spatial domain analysis, said generating comprising: (i) selecting a plurality of treatments to be applied to the plurality of photomask structure patterns exhibiting one or more corresponding defects; (ii) for each selected procedure, selecting a plurality of parameters corresponding to the procedure; (iii) applying the selected treatment having the selected parameters to the plurality of photomask structure patterns exhibiting one or more corresponding defects; (j) incorporating the potential correction photomask structure pattern into a test photomask; (k) analyzing the potential correction photomask structure pattern on the test photomask; (l) selecting a plurality of correction photomask structure patterns from the plurality of possible correction photomask structure patterns; (m) generating one or more photomask pattern correction scripts based on the analysis of the plurality of correction mask structure patterns on the test photomask; (n) executing the one or more photomask pattern correction scripts to apply one or more of the plurality of corrected photomask structure patterns to a full-layer final photomask layout; (o) fabricating the full-layer photomask incorporating therein the one or more of the plurality of corrected photomask structure patterns based on the final photomask layout; (p) verifying that the one or more corrective photomask structures have been applied to the final photomask; (q) determining that a plurality of locations on a wafer fabricated based on the photomask incorporating the one or more of the plurality of correction photomask structure patterns therein do not exhibit defects corresponding to the one or more defects from a previously fabricated photomask.

13. The system of claim 12 , wherein the pattern information comprises one or more data files corresponding to layouts of pre-fabricated photomasks.

14. The spatial domain analysis includes: (i) performing a pattern description search of the pattern information; (ii) identifying a photomask structure from the pattern information based on the pattern description search; The system of claim 12 , further comprising: (iii) generating a graph corresponding to the identified photomask structures.

15. 15. The system of claim 14, wherein the plurality of photomask structure patterns exhibiting one or more corresponding defects are identified based on the graph corresponding to the identified photomask structure.

16. analyzing the corrected photomask structure pattern on the test photomask, (i) performing a manufacturing simulation process based on the test photomask; The system of claim 12 , further comprising: (ii) visually inspecting results of the manufacturing simulation process.

17. 13. The system of claim 12, wherein the potential correction photomask structure patterns are embedded in unused spaces on a pre-fabricated photomask.

18. 1. A system for manufacturing a photomask, comprising: one or more processing units; and a memory, wherein the one or more processing units are configured to execute machine-readable instructions that, when executed, provide the system with: (a) detecting wafer defects from a scanning electron microscope (SEM) image of the wafer; (b) extracting a plurality of mask contours from an SEM image of a pre-fabricated photomask, the extracted mask contours corresponding to the detected wafer defects; (c) forming a simulated wafer using the extracted mask contours; (d) detecting one or more defects on the simulated wafer; (e) determining one or more problem areas of the pre-fabricated photomask based on the defects on the simulated wafer; (f) obtaining pattern information relating to the problem area of ​​the pre-fabricated photomask; (g) performing a spatial domain analysis of the pattern information; (h) determining a plurality of photomasks exhibiting one or more corresponding defects based on said spatial domain analysis; Determine the structure pattern, (i) generating a plurality of corrected photomask structure patterns from the plurality of photomask structure patterns based on the spatial domain analysis, said generating comprising: (i) selecting a plurality of treatments to be applied to the plurality of photomask structure patterns exhibiting one or more corresponding defects; (ii) for each selected procedure, selecting a plurality of parameters corresponding to the procedure; (iii) applying the selected treatment having the selected parameters to the plurality of photomask structure patterns exhibiting one or more corresponding defects; (j) generating one or more photomask pattern correction scripts based on the plurality of corrected photomask structure patterns; (k) executing the one or more photomask pattern correction scripts to apply one or more of the plurality of corrected photomask structure patterns to a photomask layout; (l) fabricating a photomask incorporating therein the one or more of the plurality of corrected photomask structure patterns based on the final photomask layout for a layer; (m) verifying that the one or more correction photomask structures remain applied to the photomask; (n) determining that a plurality of locations on a wafer fabricated based on the photomask incorporating therein the one or more of the plurality of correction photomask structure patterns do not exhibit defects corresponding to the one or more defects from a previously fabricated photomask.

19. 20. The system of claim 18, wherein the pattern information comprises one or more data files corresponding to layouts of pre-fabricated photomasks.

20. The spatial domain analysis includes: (i) performing a pattern description search of the pattern information; (ii) identifying a photomask structure from the pattern information based on the pattern description search; 20. The system of claim 18, further comprising: (iii) generating a graph corresponding to the identified photomask structures.

21. 21. The system of claim 20, wherein the plurality of photomask structure patterns exhibiting one or more corresponding defects are identified based on the graph corresponding to the identified photomask structure.

22. 21. The system of claim 20, wherein the correction photomask structure pattern is embedded in unused space on a pre-fabricated photomask.

23. 1. A mask design correction system, comprising: one or more computer systems each having one or more processors operatively connected to one or more memory devices; and a plurality of modules stored in the one or more memory devices and programmed to run on one or more of the one or more processors, the plurality of modules comprising: (a) a scanning module, (1) scanning a first scanning electron microscope (SEM) image of a layer within a wafer; (2) detecting wafer defects from the first SEM image of the wafer; (3) outputting the location of the wafer defect on the wafer. a scanning module having a (b) a contour extraction module operatively connected to the scanning module, (1) obtaining the locations on the wafer having wafer defects; (2) a contour extraction module configured to extract a plurality of mask contours from a second SEM image of a pre-fabricated photomask associated with the layer in the wafer, the extracted mask contours corresponding to locations on the pre-fabricated photomask that correspond to the detected wafer defects on the wafer; (c) a simulation module operatively connected to the contour extraction module, (1) obtaining the plurality of extracted mask contours; (2) a simulation module configured to generate a simulated wafer using the extracted mask contours; and (d) a detection module operatively connected to the simulation module, comprising: (1) obtaining the simulated wafer; (2) detecting one or more defects on the simulated wafer; (3) a detection module configured to output data including the defects on the simulated wafer; and (e) a photomask analysis module operatively connected to the detection module, comprising: (1) acquiring the data including the defects on the simulated wafer; (2) determining one or more problem areas of the pre-fabricated photomask based on the data including the defects on the simulated wafer; (3) a photomask analysis module configured to generate pattern information relating to the potential problem areas of the pre-fabricated photomask; and (f) a spatial domain analysis module operatively connected to said photomask analysis module, comprising: (1) obtaining the pattern information related to the problem area of ​​the pre-fabricated photomask; (2) performing a spatial domain analysis of the pattern information; (3) a spatial domain analysis module configured to output results of the spatial domain analysis; and (g) a pattern identification module operatively connected to the spatial domain analysis module, comprising: (1) obtaining the results of the spatial domain analysis; (2) determining a plurality of photomask structure patterns exhibiting one or more corresponding defects based on the results of the spatial domain analysis; (3) a pattern identification module configured to output data corresponding to the plurality of photomask structure patterns exhibiting one or more corresponding defects; and (h) a pattern generation module operatively connected to the pattern identification module, comprising: (1) acquiring the data corresponding to the plurality of photomask structure patterns exhibiting one or more corresponding defects; (2) selecting a plurality of treatments to be applied to the plurality of photomask structure patterns exhibiting one or more corresponding defects; (3) for each selected procedure, selecting a plurality of parameters corresponding to the procedure; (4) applying the selected treatment having the selected parameters to the plurality of photomask structure patterns exhibiting one or more corresponding defects; (5) extracting the photomask structure patterns from the plurality of photomask structure patterns based on the spatial domain analysis. generating a plurality of possible corrective photomask structure patterns; (6) incorporating the potential correction photomask structure pattern into a test photomask; (7) analyzing the potential correction photomask structure pattern on the test photomask; (8) a pattern generation module configured to select and output a plurality of corrected photomask structure patterns from the plurality of possible corrected photomask structure patterns; (i) a script module operatively connected to the pattern selection module, (1) obtaining the plurality of corrected photomask structure patterns; (2) generating one or more photomask pattern correction scripts based on the plurality of corrected photomask structure patterns; (3) a script module configured to execute the one or more photomask pattern correction scripts to apply one or more of the plurality of corrected photomask structure patterns to a photomask layout.

24. 24. The system of claim 23, wherein the pattern information comprises one or more data files corresponding to layouts of pre-fabricated photomasks.

25. The spatial domain analysis includes: (i) performing a pattern description search of the pattern information; (ii) identifying a photomask structure from the pattern information based on the pattern description search; 24. The system of claim 23, further comprising: (iii) generating a graph corresponding to the identified photomask structures.

26. 26. The system of claim 25, wherein the plurality of photomask structure patterns exhibiting one or more corresponding defects are identified based on the graph corresponding to the identified photomask structure.

27. analyzing the correction photomask structure pattern on the test photomask, (i) performing a manufacturing simulation process based on the test photomask; 24. The system of claim 23, further comprising: (ii) visually inspecting results of the manufacturing simulation process.

28. 24. The system of claim 23, wherein the potential correction photomask structure patterns are embedded in unused spaces on a pre-fabricated photomask.

29. 1. A mask design correction system, comprising: one or more computer systems each having one or more processors operatively connected to one or more memory devices; and a plurality of modules stored in the one or more memory devices and programmed to run on one or more of the one or more processors, the plurality of modules comprising: (a) a scanning module, (1) scanning a first scanning electron microscope (SEM) image of a layer within a wafer; (2) detecting wafer defects from the first SEM image of the wafer; (3) a scanning module configured to output locations on the wafer having the wafer defects; and (b) a contour extraction module operatively connected to the scanning module, (1) obtaining the locations on the wafer having wafer defects; (2) a contour extraction module configured to extract a plurality of mask contours from a second SEM image of a pre-fabricated photomask associated with the layer in the wafer, the extracted mask contours corresponding to locations on the pre-fabricated photomask that correspond to the detected wafer defects on the wafer; (c) a simulation module operatively connected to the contour extraction module, (1) obtaining the plurality of extracted mask contours; (2) a simulation module configured to generate a simulated wafer using the extracted mask contours; and (d) a detection module operatively connected to the simulation module, comprising: (1) obtaining the simulated wafer; (2) detecting one or more defects on the simulated wafer; (3) a detection module configured to output data including the defects on the simulated wafer; and (e) a photomask analysis module operatively connected to the detection module, comprising: (1) acquiring the data including the defects on the simulated wafer; (2) determining one or more problem areas of the pre-fabricated photomask based on the data including the defects on the simulated wafer; (3) a photomask analysis module configured to generate pattern information relating to the potential problem areas of the pre-fabricated photomask; and (f) a spatial domain analysis module operatively connected to said photomask analysis module, comprising: (1) obtaining the pattern information related to the problem area of ​​the pre-fabricated photomask; (2) performing a spatial domain analysis of the pattern information; (3) a spatial domain analysis module configured to output results of the spatial domain analysis; and (g) a pattern identification module operatively connected to the spatial domain analysis module, comprising: (1) obtaining the results of the spatial domain analysis; (2) determining a plurality of photomask structure patterns exhibiting one or more corresponding defects based on the results of the spatial domain analysis; (3) a pattern identification module configured to output data corresponding to the plurality of photomask structure patterns exhibiting one or more corresponding defects; and (h) a pattern generation module operatively connected to the pattern identification module, comprising: (1) acquiring the data corresponding to the plurality of photomask structure patterns exhibiting one or more corresponding defects; (2) selecting a plurality of treatments to be applied to the plurality of photomask structure patterns exhibiting one or more corresponding defects; (3) for each selected procedure, selecting a plurality of parameters corresponding to the procedure; (4) applying the selected treatment having the selected parameters to the plurality of photomask structure patterns exhibiting one or more corresponding defects; (5) a pattern generation module configured to generate the plurality of corrected photomask structure patterns from the plurality of photomask structure patterns based on the spatial domain analysis. Jules and (i) a script module operatively connected to the pattern generation module, the script module comprising: (1) obtaining the plurality of corrected photomask structure patterns; (2) generating one or more photomask pattern correction scripts based on the plurality of corrected photomask structure patterns; (3) a script module configured to execute the one or more photomask pattern correction scripts to apply one or more of the plurality of corrected photomask structure patterns to a photomask layout.

30. 30. The system of claim 29, wherein the pattern information comprises one or more data files corresponding to layouts of pre-fabricated photomasks.

31. The spatial domain analysis includes: (i) performing a pattern description search of the pattern information; (ii) identifying a photomask structure from the pattern information based on the pattern description search; 30. The system of claim 29, further comprising: (iii) generating a graph corresponding to the identified photomask structures.

32. 32. The system of claim 31, wherein the plurality of photomask structure patterns exhibiting one or more corresponding defects are identified based on the graph corresponding to the identified photomask structure.

33. 30. The system of claim 29, wherein the correction photomask structure pattern is embedded in unused space on a pre-fabricated photomask.

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