Wafer and manufacturing method of them

Abstract

To provide a wafer having improved a characteristic and a manufacturing method of the same.SOLUTION: According to an embodiment, a wafer comprises: a first wafer; and a second wafer. Each of the first and second wafers includes: a nitride layer; and a first layer. The first layer includes: a crystalline first member; and an amorphous second member. In a unit area, the first member has a first area opposed to a second nitride region. In the unit area, the second member has a second area opposed to the second nitride region. The first wafer includes a first region. The second wafer includes a second region. A first ratio of the first area to the second area in the first region is lower than a second ratio of the first area to the second area in the second region. The first and second regions satisfy at least one of first to third conditions.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] FIELD Embodiments of the present invention relate to a wafer and a method for manufacturing the same. [Background technology]

[0002] For example, semiconductor devices are manufactured using wafers containing nitrides, and it is desirable to improve the characteristics of the wafers. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Publication No. 2020-53585 Summary of the Invention [Problem to be solved by the invention]

[0004] SUMMARY OF THE INVENTION Embodiments of the present invention provide a wafer and a method for manufacturing the same that enable improved characteristics. [Means for solving the problem]

[0005] According to an embodiment of the present invention, a wafer includes a first wafer and a second wafer. Each of the first wafer and the second wafer includes a nitride layer and a first layer. The nitride layer is Al. x1 Ga 1-x1 a first nitride region including N (0≦x1<1), and Al x2 Ga 1-x2It includes a second nitride region including N(0 < x2 ≤ 1, x1 < x2). The second nitride region is provided between the first nitride region and the first layer in the first direction. The first layer includes a crystalline first member and an amorphous second member. The first member includes a first element including at least one selected from the group consisting of Al, Hf, and Zr, and a second element including at least one selected from the group consisting of oxygen and nitrogen. In terms of unit area, the first member has a first area facing the second nitride region. In terms of unit area, the second member has a second area facing the second nitride region. The first wafer includes a first region. The second wafer includes a second region. A first ratio of the first area to the second area in the first region is lower than a second ratio of the first area to the second area in the second region. The first region and the second region satisfy at least one of a first condition, a second condition, and a third condition. In the first condition, a first intensity ratio is lower than a second intensity ratio. The first intensity ratio is a ratio of a first intensity of a first wavelength of 560 nm in a first photoluminescence light obtained from the nitride layer included in the first region to a second intensity of a second wavelength of 350 nm in the first photoluminescence light. The second intensity is a ratio of a third intensity of the first wavelength in a second photoluminescence light obtained from the nitride layer included in the second region to a fourth intensity of the second wavelength in the second photoluminescence light. In the second condition, a first photoluminescence wavelength in the nitride layer included in the first region is shorter than a second photoluminescence wavelength in the nitride layer included in the second region. In the third condition, a first thickness of the second nitride region included in the first region is thicker than a second thickness of the second nitride region included in the second region.

Brief Description of the Drawings

[0006] [Figure 1] FIG. 1(a) and FIG. 1(b) are schematic diagrams illustrating wafers according to the first embodiment. [Figure 2]2(a) and 2(b) are schematic views illustrating the wafer according to the first embodiment. [Figure 3] 3(a) and 3(b) are schematic views illustrating the wafer according to the first embodiment. [Figure 4] 4(a) and 4(b) are schematic views illustrating the wafer according to the first embodiment. [Figure 5] FIG. 5 is a schematic cross-sectional view illustrating the wafer according to the first embodiment. [Figure 6] FIG. 6 is a schematic cross-sectional view illustrating the wafer according to the first embodiment. [Figure 7] 7(a) and 7(b) are schematic views illustrating a wafer according to the second embodiment. [Figure 8] 8(a) and 8(b) are schematic views illustrating a wafer according to the second embodiment. [Figure 9] FIG. 9 is a flowchart illustrating a method for manufacturing a wafer according to the third embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0007] Hereinafter, embodiments of the present invention will be described with reference to the drawings. The drawings are schematic or conceptual, and the relationship between the thickness and width of each part, the size ratio between parts, etc. are not necessarily the same as those in reality. Even when the same part is shown, the dimensions and ratios may be different depending on the drawing. In this specification and in each drawing, elements similar to those previously described with reference to the previous drawings are designated by the same reference numerals, and detailed descriptions thereof will be omitted where appropriate.

[0008] (First embodiment) 1(a) and 1(b) are schematic views illustrating a wafer according to the first embodiment. 2(a) and 2(b) are schematic views illustrating the wafer according to the first embodiment. FIG. 1(a) is a cross-sectional view taken along line A1-A2 of FIG. 1(b). FIG. 1(b) is a plan view. FIG. 2(a) is a cross-sectional view taken along line B1-B2 of FIG. 2(b). FIG. 2(b) is a plan view.

[0009] As shown in FIGS. 1(a), 1(b), 2(a) and 2(b), the wafer 210 (e.g., a wafer group) according to the embodiment includes a first wafer 311 and a second wafer 312.

[0010] Each of the first wafer 311 and the second wafer 312 includes a nitride layer 10 and a first layer 20. The nitride layer 10 includes a first nitride region 11 and a second nitride region 12.

[0011] The first nitride region 11 contains Al x1 Ga 1-x1 N (0≦x1<1). The composition ratio x1 may be, for example, 0 or more and 0.13 or less. The first nitride region 11 is, for example, a GaN layer.

[0012] The second nitride region 12 contains Al x2 Ga 1-x2 N (0<x2≦1, x1<x2). The composition ratio x2 may be, for example, 0.15 or more and 0.35 or less. The second nitride region 12 is, for example, an AlGaN layer. The second nitride region 12 is provided between the first nitride region 11 and the first layer 20 in the first direction D1.

[0013] The first direction D1 is the Z-axis direction. One direction perpendicular to the Z-axis direction is the X-axis direction. The direction perpendicular to the Z-axis direction and the X-axis direction is the Y-axis direction. The first nitride region 11 and the second nitride region 12 are substantially parallel to the X-Y plane in a layered form.

[0014] As shown in FIGS. 1(a) and 2(a), the first nitride region 11 includes a portion facing the second nitride region 12. A carrier region 10C is formed in this portion. The carrier region 10C is, for example, a two-dimensional electron gas. In the operation of the semiconductor device based on the wafer 210, the carrier region 10C is utilized.

[0015] The first layer 20 includes a crystalline first member 21 and an amorphous second member 22. FIGS. 1(b) and 2(b) show one example of the patterns of the first member 21 and the second member 22. The first member 21 and the second member 22 are arranged in a first plane PL1 intersecting the first direction D1.

[0016] In this example, the first member 21 includes a first material. The first material includes a first element including at least one selected from the group consisting of Al, Hf, and Zr, and a second element including at least one selected from the group consisting of oxygen and nitrogen. When the first member 21 includes such a first material, the carrier density in the nitride layer 10 is increased by the first member 21.

[0017] In one example, the first member 21 is Al x3 Ga 1-x3 N (x2 < x3 ≤ 1) may be included. The composition ratio x3 may be, for example, 0.85 or more and 1 or less. The first member 21 may include, for example, AlN.

[0018] Per unit area, the first member 21 has a first area S1 facing the second nitride region 12. Per unit area, the second member 22 has a second area S2 facing the second nitride region 12. For example, the first member 21 may be in contact with the second nitride region 12. The first area S1 per unit area is the area of the portion where the first member 21 is in contact with the second nitride region 12 per unit area. For example, the second member 22 may be in contact with the second nitride region 12. The second area S2 per unit area is the area of the portion where the second member 22 is in contact with the second nitride region 12 per unit area.

[0019] The first area S1 in the example shown in FIG. 1(b) is larger than the second area S2 in the example shown in FIG. 2(b). [[ID=]]

[0020] The first wafer 311 includes a first region 51. The second wafer 312 includes a second region 52. A first ratio of a first area S1 to a second area S2 in the first region 51 is lower than a second ratio of the first area S1 to the second area S2 in the second region 52.

[0021] In the embodiment, the first region 51 and the second region 52 satisfy at least one of the following first condition, second condition, and third condition.

[0022] Under the first condition, the first intensity ratio R1 is lower than the second intensity ratio R2. The first intensity ratio R1 is the ratio of a first intensity of the first photoluminescent light having a first wavelength λ1 of 560 nm obtained from the nitride layer 10 included in the first region 51 to a second intensity of the first photoluminescent light having a second wavelength λ2 of 350 nm.

[0023] The second intensity ratio R2 is the ratio of the third intensity of the first wavelength λ1 in the second photoluminescent light obtained from the nitride layer 10 included in the second region 52 to the fourth intensity of the second wavelength λ2 in the second photoluminescent light.

[0024] The first wavelength λ1 of 560 nm corresponds to, for example, the yellow emission of GaN. The second wavelength λ2 of 350 nm corresponds to, for example, the wavelength of near-band-edge emission of GaN. For example, when the ratio of the intensity of the first wavelength λ1 to the intensity of the second wavelength λ2 is high, the carrier density in the nitride layer 10 is low. For example, when the ratio of the intensity of the first wavelength λ1 to the intensity of the second wavelength λ2 is low, the carrier density in the nitride layer 10 is high. The first condition corresponds to a state in which the carrier density in the first region 51 is higher than the carrier density in the second region 52.

[0025] Under the second condition, the first photoluminescence wavelength of the nitride layer 10 included in the first region 51 is shorter than the second photoluminescence wavelength of the nitride layer 10 included in the second region 52.

[0026] When the photoluminescence wavelength is long, the carrier density is low. When the photoluminescence wavelength is short, the carrier density is high. The second condition corresponds to a state in which the carrier density in the first region 51 is higher than the carrier density in the second region 52.

[0027] Under the third condition, the first thickness t1 (see Figure 1(a)) of the second nitride region 12 included in the first region 51 is thicker than the second thickness t2 (see Figure 2(a)) of the second nitride region 12 included in the second region 52.

[0028] When the first component 21 contains a small amount of the first material, and the second nitride region 12 is thin, the carrier density is low. When the second nitride region 12 is thick, the carrier density is high. The third condition corresponds to a state in which the carrier density in the first region 51 is higher than the carrier density in the second region 52.

[0029] Thus, when the carrier density in the first region 51 is higher than the carrier density in the second region 52 (first to third conditions), the first ratio of the first area S1 to the second area S2 in the first region 51 is lower than the second ratio of the first area S1 to the second area S2 in the second region 52. Such a first layer 20 corrects non-uniformity of the carrier density in the nitride layer 10. For example, the carrier density is made uniform in the first region 51 (first wafer 311) and the second region 52 (second wafer 312). A wafer (e.g., a wafer group) with improved characteristics can be provided.

[0030] In the embodiment, the difference in carrier density between the two regions (two wafers) can be reduced. In the embodiment, the carrier density in one region may be corrected to a target value. For example, the carrier density in the first region 51 may be corrected to a target value. The carrier density in the second region 52 may be corrected to a target value.

[0031] The first wafer 311 and the second wafer 312 can be, for example, included in different manufacturing lots, or the first wafer 311 and the second wafer 312 can be, for example, included in the same manufacturing lot, or the first wafer 311 and the second wafer 312 can be, for example, included in a set of wafers.

[0032] In the embodiment, the first thickness t1 and the second thickness t2 may be values ​​obtained by X-ray reflectivity measurement. This allows for more accurate thicknesses to be obtained. For example, the first thickness t1 when the X-ray reflection intensity is high is thicker than the first thickness t1 when the X-ray reflection intensity is low. For example, the second thickness t2 when the X-ray reflection intensity is high is thicker than the second thickness t2 when the X-ray reflection intensity is low.

[0033] In an embodiment, the second member 22 may include, for example, at least one selected from the group consisting of nitrogen and oxygen, and silicon. 1(a) and 2(a), there may be provided a plurality of first members 21. One of the plurality of first members 21 is provided between a part of the second member 22 and another part of the second member 22.

[0034] There may be provided a plurality of second members 22. One of the plurality of second members 22 may be provided between a part of the first member 21 and another part of the first member 21.

[0035] A plurality of first members 21 and a plurality of second members 22 may be provided. One of the plurality of first members 21 may be provided between one of the plurality of second members 22 and another of the plurality of second members 22. One of the plurality of second members 22 may be provided between one of the plurality of first members 21 and another of the plurality of first members 21.

[0036] One of the plurality of first members 21 may be dot-shaped, striped, or a combination of dots and stripes. One of the plurality of second members 22 may be dot-shaped, striped, or a combination of dots and stripes. The first member 21 and the second member 22 may be comb-shaped.

[0037] As shown in FIGS. 1(a) and 1(b), the wafer 210 (first wafer 311 and second wafer 312) may further include a substrate 10S and a nitride member 10B. The nitride member 10B is provided on the substrate 10S. A first nitride region 11 is provided on the nitride member 10B. A second nitride region 12 is provided on the first nitride region 11. A first layer 20 is provided on the second nitride region 12. The substrate 10S may be, for example, a silicon substrate. The nitride member 10B contains Al, Ga, and N. The nitride member 10B is, for example, a buffer layer. The nitride layer 10 may be included in a structure 10x. The structure 10x may include the substrate 10S and the nitride member 10B.

[0038] 3(a) and 3(b) are schematic views illustrating the wafer according to the first embodiment. 4(a) and 4(b) are schematic views illustrating the wafer according to the first embodiment. Fig. 3(a) is a cross-sectional view taken along line A1-A2 in Fig. 3(b), Fig. 3(b) is a plan view, Fig. 4(a) is a cross-sectional view taken along line B1-B2 in Fig. 4(b), and Fig. 4(b) is a plan view.

[0039] As shown in FIGS. 3(a), 3(b), 4(a), and 4(b), the wafer 211 according to the embodiment includes a first wafer 311 and a second wafer 312. In the wafer 211, the second material includes Ga and nitrogen. The second material may be, for example, GaN. The second material may further include at least one of Mg, Zn, and C. The second material may be, for example, p-type (p-type GaN). In the wafer 211, a first ratio of the first area S1 to the second area S2 in the first region 51 is higher than a second ratio of the first area S1 to the second area S2 in the second region 52. The remaining configuration of the wafer 211 may be similar to that of the wafer 210.

[0040] When the first component 21 contains the above-mentioned second material, the first component 21 reduces the carrier density in the nitride layer 10.

[0041] In this case as well, the first region 51 and the second region 52 satisfy at least one of the first condition, the second condition, and the third condition.

[0042] As already described, under the first condition, the first intensity ratio R1 is higher than the second intensity ratio R2. The first intensity ratio R1 is the ratio of a first intensity of a first wavelength λ1 of 560 nm in the first photoluminescent light obtained from the nitride layer 10 included in the first region 51 to a second intensity of a second wavelength λ2 of 350 nm in the first photoluminescent light. The second intensity ratio R2 is the ratio of a third intensity of a first wavelength λ1 in the second photoluminescent light obtained from the nitride layer 10 included in the second region 52 to a fourth intensity of a second wavelength λ2 in the second photoluminescent light.

[0043] Under the second condition, a first photoluminescence wavelength of the nitride layer 10 included in the first region 51 is longer than a second photoluminescence wavelength of the nitride layer 10 included in the second region 52. Under the third condition, a first thickness t1 of the second nitride region 12 included in the first region 51 is thinner than a second thickness t2 of the second nitride region 12 included in the second region 52. The first to third conditions correspond to a state in which the carrier density in the first region 51 is lower than the carrier density in the second region 52.

[0044] In such a case, the carrier density can be relatively high because the area of ​​the first member 21 containing the second material (p-type GaN) is small. For example, a first ratio of the first area S1 to the second area S2 in the first region 51 is set higher than a second ratio of the first area S1 to the second area S2 in the second region 52. Such a first layer 20 corrects non-uniformity in the carrier density in the nitride layer 10. For example, the carrier density is made uniform in the first region 51 (first wafer 311) and the second region 52 (second wafer 312). A wafer capable of improving characteristics can be provided.

[0045] 5 and 6 are schematic cross-sectional views illustrating the wafer according to the first embodiment. As shown in FIG. 5, in the wafer 210a according to the embodiment, at least a part of the second member 22 is between the second nitride region 12 and a part of the first member 21. As shown in FIG. 6, in the wafer 210b according to the embodiment, at least a part of the first member 21 is between the second nitride region 12 and a part of the second member 22. Such a configuration may be applied to the wafers 210 and 211.

[0046] (Second Embodiment) FIGS. 7(a) and 7(b) are schematic diagrams illustrating a wafer according to the second embodiment. FIG. 7(a) is a cross-sectional view taken along line A1 - A2 of FIG. 7(b). FIG. 7(b) is a plan view. The wafer 220 according to the embodiment includes a nitride layer 10 and a first layer 20. The nitride layer 10 includes a first nitride region 11 containing Al x1 Ga 1-x1 N (0 ≦ x1 < 1) and a second nitride region 12 containing Al x2 Ga 1-x2 N (0 < x2 ≦ 1, x1 < x2).

[0047] The second nitride region 12 is provided between the first nitride region 11 and the first layer 20 in the first direction D1.

[0048] The first layer 20 includes a crystalline first member 21 and an amorphous second member 22. In this example, the first member 21 includes a first material. As already described, the first material includes a first element including at least one selected from the group consisting of Al, Hf, and Zr, and a second element including at least one selected from the group consisting of oxygen and nitrogen.

[0049] Per unit area, the first member 21 has a first area S1 facing the second nitride region 12. Per unit area, the second member 22 has a second area S2 facing the second nitride region 12.

[0050] In the second embodiment, the nitride layer 10 includes a first region 51 and a second region 52. In the second embodiment, the first region 51 and the second region 52 are provided on one wafer 220. The first region 51 and the second region 52 are aligned in a first plane PL1 that intersects with a first direction D1. A first ratio of a first area S1 to a second area S2 in the first region 51 is lower than a second ratio of the first area S1 to the second area S2 in the second region 52.

[0051] The first region 51 and the second region 52 satisfy at least one of the first condition, the second condition, and the third condition.

[0052] As already explained, under the first condition, the first intensity ratio R1 is lower than the second intensity ratio R2. The first intensity ratio R1 is the ratio of a first intensity of a first wavelength λ1 of 560 nm in the first photoluminescent light obtained from the nitride layer 10 included in the first region 51 to a second intensity of a second wavelength λ2 of 350 nm in the first photoluminescent light. The second intensity ratio R2 is the ratio of a third intensity of a first wavelength λ1 in the second photoluminescent light obtained from the nitride layer 10 included in the second region 52 to a fourth intensity of a second wavelength λ2 in the second photoluminescent light.

[0053] Under the second condition, the first photoluminescence wavelength of the nitride layer 10 included in the first region 51 is shorter than the second photoluminescence wavelength of the nitride layer 10 included in the second region 52.

[0054] Under the third condition, the first thickness t1 of the second nitride region 12 included in the first region 51 is greater than the second thickness t2 of the second nitride region 12 included in the second region 52.

[0055] When these first to third conditions are satisfied, a first ratio of the first area S1 to the second area S2 in the first region 51 is higher than a second ratio of the first area S1 to the second area S2 in the second region 52. This makes it possible to correct, for example, the carrier density in one wafer 220. In the second embodiment as well, it is possible to provide a wafer with improved characteristics.

[0056] In an embodiment, a second region 52 may be provided around the first region 51. Alternatively, the first region 51 may be provided around the second region 52. The first region 51 and the second region 52 may be any regions on the wafer 220.

[0057] In the wafer 220, the first member 21 may contain Al x3 Ga 1-x3 N (where x2 < x3 ≤ 1).

[0058] FIGS. 8(a) and 8(b) are schematic diagrams illustrating a wafer according to the second embodiment. FIG. 8(a) is a cross-sectional view taken along line A1 - A2 of FIG. 8(b). FIG. 8(b) is a plan view. In the wafer 221 according to the embodiment, the second material contains Ga and nitrogen in the wafer 221. The second material may be, for example, GaN. The second material may further contain at least any one of Mg, Zn, and C. The second material may be, for example, p-type (p-type GaN). In the wafer 221, a first ratio of a second area S2 to a first area S1 in the first region 51 is lower than a second ratio of the second area S2 to the first area S1 in the second region 52. The configuration of the wafer 221 except this may be the same as the configuration of the wafer 220.

[0059] When the first member 21 contains the above second material, the carrier density in the nitride layer 10 decreases due to the first member 21.

[0060] Even in this case, the first region 51 and the second region 52 satisfy at least any one of the first condition, the second condition, and the third condition.

[0061] When the first to third conditions are satisfied, the first ratio of the first area S1 to the second area S2 in the first region 51 is lower than the second ratio of the first area S1 to the second area S2 in the second region 52. Thereby, for example, the carrier density in one wafer 221 can be corrected. In the second embodiment, a wafer with improved characteristics can also be provided.

[0062] In an embodiment, the second region 52 may be provided around the first region 51. Alternatively, the first region 51 may be provided around the second region 52. The first region 51 and the second region 52 may be any regions in the wafer 221.

[0063] (Third Embodiment) FIG. 9 is a flowchart illustrating a method for manufacturing a wafer according to the third embodiment. As shown in FIG. 9, in the method for manufacturing a wafer according to the embodiment, a structure 10x including a nitride layer 10 is prepared (step S110).

[0064] [[ID=z15]] The nitride layer 10 includes a first nitride region 11 and a second nitride region 12. The first nitride region 11 contains Al x1 Ga 1-x1 N (0 ≦ x1 <1). The second nitride region 12 is provided on the first nitride region 11. The second nitride region 12 contains Al x2 Ga 1-x2 N (0 <x2 ≦ 1, x1 <x2).

[0065] A first layer 20 is formed on the second nitride region 12 (step S120). The first layer 20 includes a crystalline first member 21 and an amorphous second member 22.

[0066] In the embodiment, at least one of the processing conditions of at least one of the first member 21 and the second member 22 is changed based on at least one of the first information, the second information, and the third information.

[0067] The first information includes an intensity ratio of a first intensity of photoluminescent light having a first wavelength λ1 of 560 nm obtained from nitride layer 10 to a second intensity of photoluminescent light having a second wavelength λ2 of 350 nm. The second information includes a photoluminescent wavelength in nitride layer 10. The third information includes a thickness of second nitride region 12.

[0068] As already explained, the first information, the second information, and the third information include information relating to the carrier density in the nitride layer 10.

[0069] Based on such information, the processing conditions are changed, and the processing conditions may include at least one of exposure conditions and etching conditions.

[0070] In one example, a film that will become the first member 21 is formed on the second nitride region 12. This film is processed to form the first member 21. The processing is performed by photolithography and etching. The shape (size, area, etc.) of the first member 21 can be changed by changing the conditions of these processes. A second member 22 may be formed between and on the first members 21 obtained by processing.

[0071] In one example, a film that will become the second member 22 is formed on the second nitride region 12. This film is processed to form the second member 22. The processing is performed by photolithography and etching. The shape (size, area, etc.) of the second member 22 can be changed by changing the conditions of these processes. The first member 21 may be formed between the second members 22 obtained by processing.

[0072] In this way, the difference in area ratio between the first region 51 and the second region 52 can be obtained.

[0073] In the third embodiment, per unit area, the first member 21 has a first area S1 facing the second nitride region 12. Per unit area, the second member 22 has a second area S2 facing the second nitride region 12. The ratio of the first area S1 to the second area S2 is controlled by processing conditions.

[0074] For example, the first member 21 includes a first material. The first material includes a first element including at least one selected from the group consisting of Al, Hf, and Zr, and a second element including at least one selected from the group consisting of oxygen and nitrogen.

[0075] The first information, second information, and third information may have the following first state or second state. The intensity ratio in the first state is lower than the intensity ratio in the second state. The photoluminescence wavelength in the first state is shorter than the photoluminescence wavelength in the second state. The thickness of the second nitride region 12 in the first state is thicker than the thickness of the second nitride region 12 in the second state. The ratio of the first area S1 to the second area S2 in such a first state is lower than the ratio of the first area S1 to the second area S2 in the second state. For example, non-uniformity or deviation of carrier concentration can be corrected.

[0076] On the other hand, the first member 21 may contain a second material. The second material includes Ga and nitrogen. The second material may further include at least one of Mg, Zn, and C. When the first member 21 contains such a first material, the processing conditions may be controlled as follows: The intensity ratio in the first state is higher than the intensity ratio in the second state. The photoluminescence wavelength in the first state is longer than the photoluminescence wavelength in the second state. The thickness of the second nitride region 12 in the first state is thinner than the thickness of the second nitride region 12 in the second state. The ratio of the first area S1 to the second area S2 in such a first state is higher than the ratio of the first area S1 to the second area S2 in the second state. For example, non-uniformity or deviation in carrier concentration can be corrected.

[0077] In an embodiment, the processing conditions may be changed between one of the plurality of wafers and another one of the plurality of wafers.

[0078] In an embodiment, the processing conditions may be changed between a first region 51 within the wafer and a second region 52 within the wafer. When the first region 51 and the second region 52 are provided within one wafer, the exposure conditions may be changed for each shot of exposure.

[0079] An embodiment may include the following technical solutions. (Technical solution 1) A first wafer, A second wafer, Comprising, Each of the first wafer and the second wafer includes a nitride layer and a first layer. The nitride layer includes a first nitride region containing Al x1 Ga 1-x1 N (0 ≦ x1 < 1), and a second nitride region containing Al x2 Ga 1-x2 N (0 < x2 ≦ 1, x1 < x2). The second nitride region is provided between the first nitride region and the first layer in a first direction. The first layer includes a first member of a crystal and a second member of an amorphous material. The first member includes a first element selected from at least one of the group consisting of Al, Hf, and Zr, and a second element selected from at least one of the group consisting of oxygen and nitrogen. In a unit area, the first member has a first area facing the second nitride region. In the unit area, the second member has a second area facing the second nitride region. The first wafer includes a first region. The second wafer includes a second region. A first ratio of the first area to the second area in the first region is lower than a second ratio of the first area to the second area in the second region. The first region and the second region satisfy at least one of a first condition, a second condition, and a third condition. In the first condition, the first intensity ratio is lower than the second intensity ratio. The first intensity ratio is the ratio of the first intensity of a first wavelength of 560 nm in the first photoluminescence light obtained from the nitride layer included in the first region to the second intensity of a second wavelength of 350 nm in the first photoluminescence light. The second intensity is the ratio of the third intensity of the first wavelength in the second photoluminescence light obtained from the nitride layer included in the second region to the fourth intensity of the second wavelength in the second photoluminescence light. In the second condition, the first photoluminescence wavelength in the nitride layer included in the first region is shorter than the second photoluminescence wavelength in the nitride layer included in the second region. In the third condition, a first thickness of the second nitride region included in the first region is thinner than a second thickness of the second nitride region included in the second region, the wafer.

[0080] (Technical Solution 2) A first wafer, A second wafer, comprising: Each of the first wafer and the second wafer includes a nitride layer and a first layer. The nitride layer includes a first nitride region containing Al x1 Ga 1-x1 N (0 ≦ x1 < 1) and a second nitride region containing Al x2 Ga 1-x2 N (0 < x2 ≦ 1, x1 < x2). The second nitride region is provided between the first nitride region and the first layer in a first direction. The first layer includes a first member of a crystal and a second member of an amorphous material. The first member includes Ga and nitrogen. In terms of unit area, the first member has a first area facing the second nitride region. In the unit area, the second member has a second area facing the second nitride region. The first wafer includes a first region. The second wafer includes a second region. A first ratio of the first area to the second area in the first region is higher than a second ratio of the first area to the second area in the second region. The first region and the second region satisfy at least one of a first condition, a second condition, and a third condition. In the first condition, a first intensity ratio is higher than a second intensity ratio. The first intensity ratio is a ratio of a first intensity of a first wavelength of 560 nm in first photoluminescence light obtained from the nitride layer included in the first region to a second intensity of a second wavelength of 350 nm in the first photoluminescence light. The second intensity ratio is a ratio of a third intensity of the first wavelength in second photoluminescence light obtained from the nitride layer included in the second region to a fourth intensity of the second wavelength in the second photoluminescence light. In the second condition, a first photoluminescence wavelength in the nitride layer included in the first region is longer than a second photoluminescence wavelength in the nitride layer included in the second region. In the third condition, a first thickness of the second nitride region included in the first region is thinner than a second thickness of the second nitride region included in the second region, the wafer.

[0081] (Technical solution 3) A nitride layer, A first layer, and includes, The nitride layer includes a first nitride region containing Al x1 GaN (0 ≦ x1 < 1), and a second nitride region containing Al x2 GaN (0 < x2 ≦ 1, x1 < x2). 1-x2 The second nitride region is provided between the first nitride region and the first layer in a first direction. ​ the first layer includes a crystalline first component and an amorphous second component; the first component includes a first element including at least one selected from the group consisting of Al, Hf, and Zr, and a second element including at least one selected from the group consisting of oxygen and nitrogen, per unit area, the first member has a first area facing the second nitride region; In the unit area, the second member has a second area facing the second nitride region, the nitride layer includes a first region and a second region; the first region and the second region are aligned in a first plane intersecting the first direction, a first ratio of the first area to the second area in the first region is lower than a second ratio of the first area to the second area in the second region; the first region and the second region satisfy at least one of a first condition, a second condition, and a third condition; In the first condition, the first intensity ratio is lower than the second intensity ratio; the first intensity ratio is a ratio of a first intensity of a first wavelength of 560 nm in first photoluminescent light obtained from the nitride layer included in the first region to a second intensity of the first photoluminescent light at a second wavelength of 350 nm; the second intensity ratio is a ratio of a third intensity of the first wavelength in second photoluminescent light obtained from the nitride layer included in the second region to a fourth intensity of the second wavelength in the second photoluminescent light, Under the second condition, a first photoluminescence wavelength of the nitride layer included in the first region is shorter than a second photoluminescence wavelength of the nitride layer included in the second region; A wafer under the third condition, wherein a first thickness of the second nitride region included in the first region is thinner than a second thickness of the second nitride region included in the second region.

[0082] (Technical proposal 4) The wafer according to Technical Solution 3, provided with the second region around the first region or provided with the first region around the first region.

[0083] (Technical Solution 5) The first member is Al x3 Ga 1-x3 The wafer according to Technical Solution 3 or 4, containing GaN(x2 < x3 ≤ 1).

[0084] (Technical Solution 6) A nitride layer, A first layer, Comprising, The nitride layer includes a first nitride region containing AlGaN(0 ≤ x1 < 1) and a second nitride region containing AlGaN(0 < x2 ≤ 1, x1 < x2), x1 Ga 1-x1 N(0≦x1<1) and a second nitride region containing AlGaN(0<x2≦1, x1<x2), x2 Ga 1-x2 The second nitride region is provided between the first nitride region and the first layer in the first direction, The first layer includes a crystalline first member and an amorphous second member, The first member includes Ga and nitrogen, The first member includes Ga and nitrogen, In a unit area, the first member has a first area facing the second nitride region, In the unit area, the second member has a second area facing the second nitride region, The nitride layer includes a first region and a second region, The first region and the second region are arranged in a first plane intersecting the first direction, A first ratio of the first area to the second area in the first region is higher than a second ratio of the first area to the second area in the second region, The first region and the second region satisfy at least one of a first condition, a second condition, and a third condition, In the first condition, a first intensity ratio is higher than a second intensity ratio, the first intensity ratio is a ratio of a first intensity of a first wavelength of 560 nm in first photoluminescent light obtained from the nitride layer included in the first region to a second intensity of the first photoluminescent light at a second wavelength of 350 nm; the second intensity ratio is a ratio of a third intensity of the first wavelength in second photoluminescent light obtained from the nitride layer included in the second region to a fourth intensity of the second wavelength in the second photoluminescent light, Under the second condition, a first photoluminescence wavelength of the nitride layer included in the first region is longer than a second photoluminescence wavelength of the nitride layer included in the second region; A wafer under the third condition, wherein a first thickness of the second nitride region included in the first region is thinner than a second thickness of the second nitride region included in the second region.

[0085] (Technical proposal 7) The wafer according to Technical Solution 6, wherein the second region is provided around the first region, or the first region is provided around the first region.

[0086] (Technical proposal 8) 8. The wafer according to any one of Technical Schemes 1 to 7, wherein the first thickness and the second thickness are values ​​obtained by X-ray reflectivity measurement.

[0087] (Technical proposal 9) 9. The wafer according to any one of Technical Schemes 1 to 8, wherein the first member and the second member are in contact with the second nitride region.

[0088] (Technical proposal 10) 10. The wafer according to any one of Technical Schemes 1 to 9, wherein the second member includes at least one selected from the group consisting of nitrogen and oxygen, and silicon.

[0089] (Technical proposal 11) At least a part of the second member is located between the second nitride region and a part of the first member, the wafer according to any one of Technical Solutions 1 to 10.

[0090] (Technical Solution 12) At least a part of the first member is located between the second nitride region and a part of the second member, the wafer according to any one of Technical Solutions 1 to 10.

[0091] (Technical Solution 13) A plurality of the first members are provided. One of the plurality of first members is provided between a part of the second member and another part of the second member, the wafer according to any one of Technical Solutions 1 to 12.

[0092] (Technical Solution 14) A plurality of the second members are provided. One of the plurality of second members is provided between a part of the first member and another part of the first member, the wafer according to any one of Technical Solutions 1 to 12. [[ID=Z4]]

[0093] (Technical Solution 15) Prepare a structure including a nitride layer, the nitride layer including a first nitride region containing Al x1 Ga 1-x1 N (0 ≦ x1 < 1) and a second nitride region provided on the first nitride region and containing Al x2 Ga 1-x2 N (0 < x2 ≦ 1, x1 < x2). Form a first layer on the second nitride region, the first layer including a crystalline first member and an amorphous second member, and change at least one of the processing conditions of at least one of the first member and the second member based on at least one of first information, second information, and third information. The first information includes the intensity ratio of the first intensity of the first wavelength of 560 nm in the photoluminescence light obtained from the nitride layer to the second intensity of the second wavelength of 350 nm in the photoluminescence light. the second information includes a photoluminescence wavelength in the nitride layer; A method for manufacturing a wafer, wherein the third information includes a thickness of the second nitride region.

[0094] (Technical proposal 16) A wafer manufacturing method according to Technical Proposal 15, wherein the processing conditions include at least one of exposure conditions and etching conditions.

[0095] (Technical proposal 17) per unit area, the first member has a first area facing the second nitride region; In the unit area, the second member has a second area facing the second nitride region, the first component includes a first element including at least one selected from the group consisting of Al, Hf, and Zr, and a second element including at least one selected from the group consisting of oxygen and nitrogen, the intensity ratio in the first state is lower than the intensity ratio in the second state; the photoluminescence wavelength in the first state is shorter than the photoluminescence wavelength in the second state; The thickness in the first state is greater than the thickness in the second state, 17. The wafer manufacturing method according to Technical Scheme 15 or 16, wherein the ratio of the first area to the second area in the first state is lower than the ratio of the first area to the second area in the second state.

[0096] (Technical proposal 18) per unit area, the first member has a first area facing the second nitride region; In the unit area, the second member has a second area facing the second nitride region, the first component includes Ga and nitrogen, the intensity ratio in the first state is higher than the intensity ratio in the second state; the photoluminescence wavelength in the first state is longer than the photoluminescence wavelength in the second state; The thickness in the first state is smaller than the thickness in the second state, 17. The wafer manufacturing method according to Technical Scheme 15 or 16, wherein the ratio of the first area to the second area in the first state is higher than the ratio of the first area to the second area in the second state.

[0097] (Technical proposal 19) 19. The method for manufacturing a wafer according to any one of Technical Schemes 15 to 18, wherein the processing conditions are changed for one of a plurality of wafers and another of the plurality of wafers.

[0098] (Technical proposal 20) 19. The method for manufacturing a wafer according to any one of Technical Schemes 15 to 18, wherein the processing conditions are changed in a first region within the surface of the wafer and in a second region within the surface of the wafer.

[0099] According to the embodiment, it is possible to provide a wafer capable of improving characteristics and a method for manufacturing the same.

[0100] The embodiments of the present invention have been described above with reference to specific examples. However, the present invention is not limited to these specific examples. For example, the specific configurations of elements included in the wafer, such as nitride layers, nitride regions, layers, members, and substrates, are within the scope of the present invention as long as a person skilled in the art can implement the present invention in a similar manner and obtain similar effects by appropriately selecting them from known ranges.

[0101] Furthermore, any combination of two or more elements of each specific example within the scope of technical feasibility is also included within the scope of the present invention as long as it includes the gist of the present invention.

[0102] In addition, all wafers and manufacturing methods thereof that can be implemented by a person skilled in the art by making appropriate design modifications based on the wafer and manufacturing method thereof described above as embodiments of the present invention also fall within the scope of the present invention, as long as they include the gist of the present invention.

[0103] In addition, within the scope of the concept of the present invention, a person skilled in the art may come up with various modifications and alterations, and it will be understood that these modifications and alterations also fall within the scope of the present invention.

[0104] Although several embodiments of the present invention have been described, these embodiments are presented as examples and are not intended to limit the scope of the invention. These novel embodiments can be embodied in various other forms, and various omissions, substitutions, and modifications can be made without departing from the spirit of the invention. These embodiments and their modifications are included within the scope and spirit of the invention, and are also included in the scope of the invention and its equivalents as defined in the claims. [Explanation of symbols]

[0105] 10: nitride layer, 10B: nitride member, 10C: carrier region, 10S: substrate, 10x: structure, 11, 12: first and second nitride regions, 20: first layer, 21, 22: first and second members, 51, 52: first and second regions, 210, 210a, 210b, 211, 220, 221: wafer, 311, 312: first and second wafers, D1: first direction, PL1: first plane, t1, t2: first and second thicknesses

Claims

1. a first wafer; a second wafer; and Equipped with each of the first wafer and the second wafer includes a nitride layer and a first layer; The nitride layer is Al ｘ１ Ga １－ｘ１ a first nitride region including N (0≦x1<1); and Al ｘ２ Ga １－ｘ２ and a second nitride region comprising N (0<x2≦1, x1<x2), the second nitride region is provided between the first nitride region and the first layer in a first direction; the first layer includes a crystalline first component and an amorphous second component; the first member includes a first element including at least one selected from the group consisting of Al, Hf, and Zr, and a second element including at least one selected from the group consisting of oxygen and nitrogen, per unit area, the first member has a first area facing the second nitride region; In the unit area, the second member has a second area facing the second nitride region, the first wafer includes a first region; the second wafer includes a second region; a first ratio of the first area to the second area in the first region is lower than a second ratio of the first area to the second area in the second region; the first region and the second region satisfy at least one of a first condition, a second condition, and a third condition; In the first condition, the first intensity ratio is lower than the second intensity ratio; the first intensity ratio is a ratio of a first intensity of a first wavelength of 560 nm in first photoluminescent light obtained from the nitride layer included in the first region to a second intensity of a second wavelength of 350 nm in the first photoluminescent light; the second intensity is a ratio of a third intensity of the first wavelength in the second photoluminescent light obtained from the nitride layer included in the second region to a fourth intensity of the second wavelength in the second photoluminescent light, Under the second condition, a first photoluminescence wavelength of the nitride layer included in the first region is shorter than a second photoluminescence wavelength of the nitride layer included in the second region; A wafer under the third condition, wherein a first thickness of the second nitride region included in the first region is thinner than a second thickness of the second nitride region included in the second region.

2. a first wafer; a second wafer; and Equipped with each of the first wafer and the second wafer includes a nitride layer and a first layer; The nitride layer is Al ｘ１ Ga １－ｘ１ a first nitride region including N (0≦x1<1); and Al ｘ２ Ga １－ｘ２ and a second nitride region comprising N (0<x2≦1, x1<x2), the second nitride region is provided between the first nitride region and the first layer in a first direction; the first layer includes a crystalline first component and an amorphous second component; the first component includes Ga and nitrogen; per unit area, the first member has a first area facing the second nitride region; In the unit area, the second member has a second area facing the second nitride region, the first wafer includes a first region; the second wafer includes a second region; a first ratio of the first area to the second area in the first region is greater than a second ratio of the first area to the second area in the second region; the first region and the second region satisfy at least one of a first condition, a second condition, and a third condition; In the first condition, the first intensity ratio is higher than the second intensity ratio; the first intensity ratio is a ratio of a first intensity of a first wavelength of 560 nm in first photoluminescent light obtained from the nitride layer included in the first region to a second intensity of a second wavelength of 350 nm in the first photoluminescent light; the second intensity ratio is a ratio of a third intensity of the first wavelength in second photoluminescent light obtained from the nitride layer included in the second region to a fourth intensity of the second wavelength in the second photoluminescent light, Under the second condition, a first photoluminescence wavelength of the nitride layer included in the first region is longer than a second photoluminescence wavelength of the nitride layer included in the second region; A wafer under the third condition, wherein a first thickness of the second nitride region included in the first region is thinner than a second thickness of the second nitride region included in the second region.

3. a nitride layer; and The first layer, Equipped with The nitride layer is Al ｘ１ Ga １－ｘ１ a first nitride region including N (0≦x1<1); and Al ｘ２ Ga １－ｘ２ and a second nitride region comprising N (0<x2≦1, x1<x2), the second nitride region is provided between the first nitride region and the first layer in a first direction; the first layer includes a crystalline first component and an amorphous second component; the first member includes a first element including at least one selected from the group consisting of Al, Hf, and Zr, and a second element including at least one selected from the group consisting of oxygen and nitrogen, per unit area, the first member has a first area facing the second nitride region; In the unit area, the second member has a second area facing the second nitride region, the nitride layer includes a first region and a second region; the first region and the second region are aligned in a first plane intersecting the first direction, a first ratio of the first area to the second area in the first region is lower than a second ratio of the first area to the second area in the second region; the first region and the second region satisfy at least one of a first condition, a second condition, and a third condition; In the first condition, the first intensity ratio is lower than the second intensity ratio; the first intensity ratio is a ratio of a first intensity of a first wavelength of 560 nm in first photoluminescent light obtained from the nitride layer included in the first region to a second intensity of a second wavelength of 350 nm in the first photoluminescent light; the second intensity ratio is a ratio of a third intensity of the first wavelength in second photoluminescent light obtained from the nitride layer included in the second region to a fourth intensity of the second wavelength in the second photoluminescent light, Under the second condition, a first photoluminescence wavelength of the nitride layer included in the first region is shorter than a second photoluminescence wavelength of the nitride layer included in the second region; A wafer under the third condition, wherein a first thickness of the second nitride region included in the first region is thinner than a second thickness of the second nitride region included in the second region.

4. The wafer according to claim 3 , wherein the second region is provided around the first region, or the first region is provided around the first region.

5. a nitride layer; and The first layer, Equipped with The nitride layer is Al ｘ１ Ga １－ｘ１ a first nitride region including N (0≦x1<1); and Al ｘ２ Ga １－ｘ２ and a second nitride region comprising N (0<x2≦1, x1<x2), the second nitride region is provided between the first nitride region and the first layer in a first direction; the first layer includes a crystalline first component and an amorphous second component; the first component includes Ga and nitrogen; per unit area, the first member has a first area facing the second nitride region; In the unit area, the second member has a second area facing the second nitride region, the nitride layer includes a first region and a second region; the first region and the second region are aligned in a first plane intersecting the first direction, a first ratio of the first area to the second area in the first region is greater than a second ratio of the first area to the second area in the second region; the first region and the second region satisfy at least one of a first condition, a second condition, and a third condition; In the first condition, the first intensity ratio is higher than the second intensity ratio; the first intensity ratio is a ratio of a first intensity of a first wavelength of 560 nm in first photoluminescent light obtained from the nitride layer included in the first region to a second intensity of a second wavelength of 350 nm in the first photoluminescent light; the second intensity ratio is a ratio of a third intensity of the first wavelength in second photoluminescent light obtained from the nitride layer included in the second region to a fourth intensity of the second wavelength in the second photoluminescent light, Under the second condition, a first photoluminescence wavelength of the nitride layer included in the first region is longer than a second photoluminescence wavelength of the nitride layer included in the second region; A wafer under the third condition, wherein a first thickness of the second nitride region included in the first region is thinner than a second thickness of the second nitride region included in the second region.

6. 6. The wafer according to claim 1, wherein the second member includes at least one selected from the group consisting of nitrogen and oxygen, and silicon.

7. A structure including a nitride layer is provided, the nitride layer being Al ｘ１ Ga １－ｘ１ a first nitride region including N (0≦x1<1); and an Al nitride region provided on the first nitride region. ｘ２ Ga １－ｘ２ and a second nitride region comprising N (0<x2≦1, x1<x2), forming a first layer on the second nitride region, the first layer including a crystalline first member and an amorphous second member, and changing processing conditions of at least one of the first member and the second member based on at least one of first information, second information, and third information; the first information includes an intensity ratio of a first intensity of photoluminescent light having a first wavelength of 560 nm obtained from the nitride layer to a second intensity of the photoluminescent light having a second wavelength of 350 nm; the second information includes a photoluminescence wavelength in the nitride layer; The third information includes a thickness of the second nitride region.

8. The method for producing a wafer according to claim 7 , wherein the processing conditions include at least one of exposure conditions and etching conditions.

9. per unit area, the first member has a first area facing the second nitride region; In the unit area, the second member has a second area facing the second nitride region, the first member includes a first element including at least one selected from the group consisting of Al, Hf, and Zr, and a second element including at least one selected from the group consisting of oxygen and nitrogen, the intensity ratio in the first state is lower than the intensity ratio in the second state; the photoluminescence wavelength in the first state is shorter than the photoluminescence wavelength in the second state; The thickness in the first state is greater than the thickness in the second state, 8. The method for manufacturing a wafer according to claim 7, wherein a ratio of the first area to the second area in the first state is lower than a ratio of the first area to the second area in the second state.

10. per unit area, the first member has a first area facing the second nitride region; In the unit area, the second member has a second area facing the second nitride region, the first component includes Ga and nitrogen; the intensity ratio in the first state is higher than the intensity ratio in the second state; the photoluminescence wavelength in the first state is longer than the photoluminescence wavelength in the second state; The thickness in the first state is smaller than the thickness in the second state, 8. The method for manufacturing a wafer according to claim 7, wherein a ratio of the first area to the second area in the first state is higher than a ratio of the first area to the second area in the second state.

11. 11. The method for manufacturing a wafer according to claim 7, wherein the processing conditions are changed for one of a plurality of wafers and another of the plurality of wafers.

12. 11. The method for manufacturing a wafer according to claim 7, wherein the processing conditions are changed in a first region within a surface of the wafer and in a second region within the surface of the wafer.

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