Power module

Abstract

SOLUTION: A power module may include an insulating substrate, a first power semiconductor mounted on the insulating substrate, a first conductor that overlaps at least a part of the first power semiconductor in plan view, is electrically connected to a first terminal of the first power semiconductor, and extends in a first direction along a surface of the insulating substrate, a current sensor that is disposed so as to at least partially overlap or at least partially surround the first conductor in plan view and outputs a signal corresponding to a magnitude of a magnetic field generated by a measurement current flowing through the first conductor as a signal indicating a current value of the measurement current, a sealing part that seals the insulating substrate, the first power semiconductor, the first conductor, and the current sensor in a state where the first conductor and the current sensor are insulated from each other, and a first external terminal that is electrically connected to the first conductor and is exposed from the sealing part. The current sensor may be arranged between the first external terminal and the first power semiconductor in the first direction in plan view.SELECTED DRAWING: Figure 2

Description

[Technical Field]

[0001] The present invention relates to a power module. [Background technology]

[0002] Patent Document 1 describes mounting a magnetic sensor on a substrate on which a semiconductor die such as an IGBT is mounted. Patent Document 2 describes arranging a current sensor in a position facing each conductor that outputs three-phase AC power. Patent Document 3 describes fixing a current sensor module to a frame on which a substrate on which a power semiconductor is mounted is installed. [Prior art document] [Patent documents] [Patent Document 1] U.S. Patent No. 9,678,173 [Patent Document 2] JP 2023-138260 A [Patent Document 3] U.S. Patent Application Publication No. 2022 / 0262773 Summary of the Invention [Problem to be solved by the invention]

[0003] It is desirable to provide a current sensor within a power module having a power semiconductor while suppressing an increase in size of the power module. [Means for solving the problem]

[0004] A power module according to an aspect of the present invention may include an insulating substrate. The power module may include a first power semiconductor mounted on the insulating substrate. The power module may include a first conductor that at least partially overlaps with the first power semiconductor in a plan view, is electrically connected to a first terminal of the first power semiconductor, and extends in a first direction along a surface of the insulating substrate. The power module may include a current sensor that is disposed so as to at least partially overlap with or surround the first conductor in a plan view, and outputs a signal corresponding to the magnitude of a magnetic field generated by a measurement current flowing through the first conductor as a signal indicating the current value of the measurement current. The power module may include a sealing portion that seals the insulating substrate, the first power semiconductor, the first conductor, and the current sensor while the first conductor and the current sensor are insulated from each other. The power module may include a first external terminal that is electrically connected to the first conductor and exposed from the sealing portion. In a plan view, the current sensor may be disposed between the first external terminal and the first power semiconductor in the first direction.

[0005] The power module may include at least one set of input / output terminals exposed from the sealing portion. The power module may further include at least one set of input / output conductors that, in a plan view, extend along the insulating substrate and in a second direction intersecting the first direction, have a first portion electrically connected to the current sensor, and a second portion connected to at least one of the first portion and the at least one set of input / output terminals, and transmit a signal output from the current sensor. The second portion may not overlap the first conductors in a plan view.

[0006] In any of the power modules, the first external terminal may be exposed at a first side surface of the sealing portion, and the at least one set of input / output terminals may be exposed from the sealing portion on a side closer to the first side surface of the sealing portion than the first power semiconductor.

[0007] In any of the power modules, the first external terminal and the at least one set of input / output terminals may be exposed on a first side surface of the sealing portion. At least a portion of the second portion may extend along the first direction. The power module may include at least one set of input terminal and output terminal exposed from the sealing portion, an input conductor extending in a second direction intersecting the first direction in a plan view along the insulating substrate and having a first portion electrically connected to the current sensor and a second portion connected to the first portion and the input terminal, and an output conductor extending in a second direction intersecting the first direction in a plan view along the insulating substrate and having a first portion electrically connected to the current sensor and a second portion connected to the first portion and the output terminal.

[0008] In any of the power modules, the first portion may be a wire, the second portion may be a conductive pattern provided on the insulating substrate, and the current sensor may be electrically connected to the conductive pattern via the wire.

[0009] In any of the power modules, the first and second portions may be conductive patterns provided on the insulating substrate, and the current sensor may be soldered or flip-chip bonded to the first portion.

[0010] In any of the power modules, the first power semiconductor may be disposed on the first conductor.

[0011] In any of the power modules, the first conductor may be provided on the insulating substrate.

[0012] Any of the power modules may further include an insulating layer between the current sensor and the first conductor.

[0013] In any of the power modules, the insulating layer may be an adhesive for bonding the current sensor and the first conductor together.

[0014] In any one of the power modules, the insulating layer may be an insulating resin that forms the sealing portion.

[0015] In any of the power modules, the current sensor may include at least one magnetoelectric conversion element and a signal processing IC that processes a signal output from the at least one magnetoelectric conversion element.

[0016] In any of the power modules, the current sensor may be a coreless current sensor.

[0017] In any one of the power modules, the current sensor may be a semiconductor package in which the at least one magnetoelectric conversion element and the signal processing IC are sealed with a molding resin.

[0018] In any of the power modules, the at least one magnetoelectric conversion element may be electrically connected to the signal processing IC by wire bonding.

[0019] In any of the power modules, the current sensor may include two magnetoelectric conversion elements of a vertical magnetic field detection type, and the two magnetoelectric conversion elements may be arranged along the insulating substrate and facing each other in a second direction intersecting the first direction, such that the current sensor at least partially overlaps with or is at least partially surrounded by the first conductor in a plan view.

[0020] In any of the power modules, the current sensor may include at least one magnetoelectric transducer that detects a transverse magnetic field, and the current sensor may be disposed so that the at least one magnetoelectric transducer overlaps with the first conductor in a plan view.

[0021] Any of the power modules may include a second power semiconductor having a second terminal electrically connected to the first terminal and the first conductor of the first power semiconductor. The power module may include a second conductor provided on the insulating substrate and electrically connected to the second terminal of the first power semiconductor. The power module may include a third conductor provided on the insulating substrate, at least partially overlapping with the second power semiconductor in a plan view, and electrically connected to the first terminal of the second power semiconductor. The power module may include a second external terminal exposed from the sealing portion and electrically connected to the second conductor. The power module may include a third external terminal exposed from the sealing portion and electrically connected to the third conductor.

[0022] Any of the power modules may include a plurality of the first power semiconductors. Any of the power modules may include a plurality of the second power semiconductors. Any of the power modules may include a plurality of the first conductors. Any of the power modules may include a plurality of the current sensors.

[0023] The above summary of the invention does not list all of the features of the present invention, and subcombinations of these features may also be inventions. [Brief explanation of the drawings]

[0024] [Figure 1] FIG. 2 is a diagram showing an example of a circuit configuration of a power module according to the present embodiment. [Figure 2] FIG. 2 is a plan view schematically showing an example of the internal configuration of the power module according to the present embodiment. [Figure 3] 1 is a schematic diagram showing a part of a cross-sectional view of a power module as viewed from the side in the X direction. [Figure 4] FIG. 2 is a perspective view schematically showing a current sensor, a conductor, and an input / output conductor. [Figure 5] FIG. 10 is a diagram according to a modified example, which schematically shows a part of a cross-sectional view of the power module as seen from the side in the X direction. [Figure 6]6 is a perspective view schematically showing a current sensor, a conductor, and an input / output conductor in the modification shown in FIG. 5. FIG. [Figure 7A] FIG. 10 is a diagram showing an example of the shape of a conductor. [Figure 7B] FIG. 10 is a diagram illustrating an example of the shape of a conductor. [Figure 7C] FIG. 10 is a diagram showing an example of the shape of a conductor. [Figure 7D] FIG. 10 is a diagram showing an example of the shape of a conductor. [Figure 8] 10A and 10B are diagrams illustrating an example of an installation mode of a current sensor according to a modified example. [Figure 9] 10A and 10B are diagrams illustrating an example of an installation mode of a current sensor according to a modified example. [Figure 10] FIG. 10 is a diagram schematically illustrating an example of an internal configuration of a power module according to a modified example. [Figure 11] FIG. 10 is a diagram schematically illustrating an example of an internal configuration of a power module according to a modified example. DETAILED DESCRIPTION OF THE INVENTION

[0025] The present invention will be described below through embodiments of the invention, but the following embodiments do not limit the scope of the invention according to the claims. Furthermore, not all of the combinations of features described in the embodiments are necessarily essential to the solution of the invention.

[0026] FIG. 1 is a diagram showing an example of a circuit configuration of a power module 100 according to this embodiment. The power module 100 is a three-phase inverter that converts direct current into three-phase alternating current. The three-phase alternating current output from the power module 100 is supplied to a motor 60, which is a three-phase alternating current motor. The motor 60 may be a power source for a mobile object. The power module 100 and the motor 60 may be mounted on a mobile object such as a hybrid vehicle or an electric vehicle. The power module 100 may also be a single-phase inverter that converts direct current into alternating current, depending on the application.

[0027] The power module 100 includes a U-phase circuit 10U, a V-phase circuit 10V, and a W-phase circuit 10W. The U-phase circuit 10U includes a high-side power semiconductor 12U and a low-side power semiconductor 14U connected in series. The source or emitter of the power semiconductor 12U is electrically connected to the drain or collector of the power semiconductor 14U. If the power semiconductors 12U and 14U are, for example, MOSFETs, the source of the power semiconductor 12U is electrically connected to the drain of the power semiconductor 14U. If the power semiconductors 12U and 14U are, for example, IGBTs, the emitter of the power semiconductor 12U is electrically connected to the collector of the power semiconductor 14U. In the present invention, the first terminal is, for example, the drain or collector, and the second terminal is, for example, the source or emitter.

[0028] The V-phase circuit 10V has a high-side power semiconductor 12V and a low-side power semiconductor 14V connected in series. The source or emitter of the power semiconductor 12V is electrically connected to the drain or collector of the power semiconductor 14V. The W-phase circuit 10W has a high-side power semiconductor 12W and a low-side power semiconductor 14W connected in series. The source or emitter of the power semiconductor 12W is electrically connected to the drain or collector of the power semiconductor 14W.

[0029] The power module 100 includes a pair of DC terminals 32, 34, and a U-phase terminal 30U, a V-phase terminal 30V, and a W-phase terminal 30W (sometimes collectively referred to as terminals 30). The DC terminal 32 is an example of a second external terminal. The DC terminal 34 is an example of a third external terminal. The U-phase terminal 30U, the V-phase terminal 30V, and the W-phase terminal 30W are examples of first external terminals. The power module 100 further includes a high-side conductor 20 electrically connected to the DC terminal 32, and a low-side conductor 22 electrically connected to the DC terminal 34. The conductor 20 is an example of a third conductor. The conductor 22 is an example of a second conductor. The conductors 20 and 22 may be made of a conductive material containing copper as a main component.

[0030] U-phase circuit 10U, V-phase circuit 10V, and W-phase circuit 10W are connected in parallel between conductor 20 and conductor 22. The drains or collectors of high-side power semiconductors 12U, 12V, and 12W (sometimes collectively referred to as power semiconductors 12) are electrically connected to conductor 20. The sources or emitters of low-side power semiconductors 14U, 14V, and 14W (sometimes collectively referred to as power semiconductors 14) are electrically connected to conductor 22.

[0031] Power module 100 further includes conductor 24U electrically connected to U-phase terminal 30U, conductor 24V electrically connected to V-phase terminal 30V, and conductor 24W electrically connected to W-phase terminal 30W. The source or emitter of power semiconductor 12U and the drain or collector of power semiconductor 14U are electrically connected to conductor 24U. The source or emitter of power semiconductor 12V and the drain or collector of power semiconductor 14V are electrically connected to conductor 24V. The source or emitter of power semiconductor 12W and the drain or collector of power semiconductor 14W are electrically connected to conductor 24W.

[0032] Conductors 24U, 24V, and 24W (sometimes collectively referred to as conductors 24) are electrically connected to motor 60 via bus bars 40U, 40V, and 40W. Conductors 24U, 24V, and 24W are provided on insulating substrate 11. Conductors 24U, 24V, and 24W are examples of first conductors. Conductor 24 may be made of a conductive material containing copper as a main component.

[0033] Power module 100 further includes current sensors 50U, 50V, and 50W (sometimes collectively referred to as current sensor 50). Current sensor 50U measures the current value of the U-phase current flowing through conductor 24U. Current sensor 50V measures the current value of the V-phase current flowing through conductor 24V. Current sensor 50W measures the current value of the W-phase current flowing through conductor 24W.

[0034] Current sensors 50U, 50V, and 50W may be magnetic sensors having at least one magnetoelectric transducer that detects the magnitude or change in the magnetic field generated by U-phase current, V-phase current, and W-phase current flowing through conductors 24U, 24V, and 24W. Current sensors 50U, 50V, and 50W may further include a signal processing IC that outputs signals indicating the current values ​​of the U-phase current, V-phase current, and W-phase current according to the magnitude of the magnetic field output from at least one magnetoelectric transducer. The signal processing IC is a large-scale integrated circuit (LSI). The signal processing IC is a monolithic IC. More specifically, the signal processing IC is a signal processing circuit made of a Si monolithic semiconductor formed on a Si substrate. The signal processing IC may have a circuit surface on which at least one magnetoelectric transducer is disposed. Current sensors 50U, 50V, and 50W may be semiconductor packages in which at least one magnetoelectric transducer and the signal processing IC are sealed with molded resin. The at least one magnetoelectric transducer and the signal processing IC do not have to be sealed with mold resin. Current sensors 50U, 50V, and 50W may be current sensors in which the at least one magnetoelectric transducer and the signal processing IC are exposed on an insulating substrate. The at least one magnetoelectric transducer may be electrically connected to the signal processing IC by wire bonding.

[0035] Current sensors 50U, 50V, and 50W each have a terminal 55 for outputting a signal processed by a signal processing IC as a current to external input / output conductors 70U, 70V, and 70W. Terminal 55 may be exposed on the surface of current sensor 50U, 50V, or 50W, or may protrude from the surface of current sensor 50U, 50V, or 50W. Current sensors 50U, 50V, and 50W function by detecting the magnitude or change in the magnetic field generated by U-phase current, V-phase current, and W-phase current flowing through conductors 24U, 24V, and 24W using at least one magnetoelectric transducer. The signal processing IC outputs a signal corresponding to the magnitude of the magnetic field output from the magnetoelectric transducer as a signal indicating the current value of the U-phase current, V-phase current, and W-phase current, and outputs the signal to input / output conductors 70U, 70V, and 70W via terminal 55.

[0036] Current sensors 50U, 50V, and 50W may be coreless current sensors. In this specification, a coreless current sensor is a sensor that has at least one magnetoelectric transducer that detects the magnitude or change in a magnetic field generated by a current flowing through a conductor, and does not have a magnetic core arranged around the magnetic sensor or surrounding a current conductor.

[0037] In this embodiment, the power module 100 configured as described above is provided with current sensors 50U, 50V, and 50W within the power module 100 while preventing the power module 100 from becoming too large.

[0038] FIG. 2 is a plan view schematically showing an example of the internal configuration of the power module 100 according to this embodiment.

[0039] The power module 100 includes an insulating substrate 11, and conductors 20, 22, a U-phase conductor 24U, a V-phase conductor 24V, a W-phase conductor 24W, power semiconductors 12U, 14U, 12V, 14V, 12W, 14W, and current sensors 50U, 50V, 50W provided on the insulating substrate 11.

[0040] Insulating substrate 11, conductors 20, 22, U-phase conductor 24U, V-phase conductor 24V, W-phase conductor 24W, power semiconductors 12U, 14U, 12V, 14V, 12W, 14W, and current sensors 50U, 50V, 50W are sealed in sealing portion 80 that is filled with insulating resin. The insulating resin may be, for example, an epoxy resin or a silicone gel.

[0041] A pair of DC terminals 32, 34 are exposed from one side surface 80a of the sealing portion 80. A U-phase terminal 30U, a V-phase terminal 30V, and a W-phase terminal 30W are exposed from a side surface 80b of the sealing portion 80 opposite to the side surface 80a.

[0042] Here, the direction along insulating substrate 11 from side surface 80b toward side surface 80a is defined as a first direction (Y-axis direction), and the direction along insulating substrate 11 and intersecting with the first direction is defined as a second direction (X-axis direction).

[0043] Conductor 20 is connected to DC terminal 32, and conductor 22 is connected to DC terminal 34. Conductor 20 and conductor 22 may be wiring patterns provided on insulating substrate 11. Conductor 20 extends from DC terminal 32 in a first direction from side surface 80a to side surface 80b, and further extends from side surface 80c toward side surface 80d opposite side surface 80c in a second direction. Conductor 22 extends from DC terminal 34 in the first direction from side surface 80a to side surface 80b, and further extends from side surface 80c toward side surface 80d in the second direction. Conductor 20 and conductor 22 extend parallel to each other with a gap in plan view. Note that the shapes of conductors 20 and 22 are merely examples, and other shapes may be used.

[0044] Power semiconductors 12U, 12V, and 12W are disposed on conductor 20 via a conductive adhesive. The drains or collectors of power semiconductors 12U, 12V, and 12W are electrically connected to conductor 20 via a conductive adhesive. The sources or emitters of power semiconductors 12U, 12V, and 12W are electrically connected to conductors 24U, 24V, and 24W via wires 17U, 17V, and 17W, respectively. Power semiconductors 12U, 12V, and 12W are an example of a second power semiconductor. Wires 17U, 17V, and 17W may be formed of a conductive material containing Au, Ag, Cu, or Al as a main component.

[0045] Conductor 24U is connected to U-phase terminal 30U, conductor 24V is connected to V-phase terminal 30V, and conductor 24W is connected to W-phase terminal 30W. Conductors 24U, 24V, and 24W extend in a first direction from side surface 80b toward side surface 80a along insulating substrate 11. Conductors 24U, 24V, and 24W may be wiring patterns provided on insulating substrate 11. An extension portion extending in the second direction toward side surface 80c and side surface 80d may be provided at one end of conductors 24U, 24V, and 24W opposite to U-phase terminal 30U, V-phase terminal 30V, and W-phase terminal 30W.

[0046] Power semiconductors 14U, 14V, and 14W are disposed on conductors 24U, 24V, and 24W via conductive adhesive. The drains or collectors of power semiconductors 14U, 14V, and 14W are electrically connected to conductors 24U, 24V, and 24W via conductive adhesive. The sources or emitters of power semiconductors 14U, 14V, and 14W are electrically connected to conductor 22 via wires 19U, 19V, and 19W. Power semiconductors 14U, 14V, and 14W are an example of a first power semiconductor. Wires 19U, 19V, and 19W may be formed of a conductive material containing Au, Ag, Cu, or Al as a main component.

[0047] Current sensors 50U, 50V, and 50W are disposed on the conductors 24U, 24V, and 24W via insulators.

[0048] In the power module 100 configured in this manner, in a plan view, the current sensors 50U, 50V, 50W are arranged in the first direction between the U-phase terminal 30U, the V-phase terminal 30V, the W-phase terminal 30W and the power semiconductors 14U, 14V, 14W.

[0049] Current sensors 50U, 50V, 50W are arranged so that, in a plan view, at least a portion of each sensor overlaps with or is surrounded by conductors 24U, 24V, 24W that extend in the first direction and are electrically connected to power semiconductors 14U, 14V, 14W. This allows current sensors 50U, 50V, 50W to accurately detect the magnitude of the magnetic field generated by the current flowing through conductors 24U, 24V, 24W. When current sensors 50U, 50V, 50W have a vertical magnetic field detection element such as a Hall element as a magnetoelectric conversion element, current sensors 50U, 50V, 50W may be arranged so that at least a portion of each sensor is surrounded by conductors 24U, 24V, 24W in a plan view. When current sensors 50U, 50V, and 50W have transverse magnetic field detection elements such as magnetoresistance elements as magnetoelectric conversion elements, current sensors 50U, 50V, and 50W may be arranged so as to at least partially overlap conductors 24U, 24V, and 24W in a planar view. Current sensors 50U, 50V, and 50W may be arranged so that the magnetically sensitive surfaces of current sensors 50U, 50V, and 50W at least partially overlap conductors 24U, 24V, and 24W in a planar view.

[0050] By disposing the current sensors 50U, 50V, and 50W between the U-phase terminal 30U, the V-phase terminal 30V, and the W-phase terminal 30W and the power semiconductors 14U, 14V, and 14W, the current sensors 50U, 50V, and 50W can detect currents flowing near the U-phase terminal 30U, the V-phase terminal 30V, and the W-phase terminal 30W. Furthermore, by disposing the current sensors 50U, 50V, and 50W on the paths of the conductors 24U, 24V, and 24W that extend in the first direction and overlap with the power semiconductors 14U, 14V, and 14W in a plan view, the power semiconductors 14U, 14V, and 14W and the current sensors 50U, 50V, and 50W can be disposed without wasting space. This allows the power module 100 to be miniaturized.

[0051] The power module 100 further has input / output terminals 73U, 73V, and 73W that are exposed from the sealing portion 80 and are electrically connected to the terminals of the current sensors 50U, 50V, and 50W. The input / output terminals 73U, 73V, and 73W extend to the surface of the sealing portion 80 opposite to the surface on which the insulating substrate 11 is arranged, and may be electrically connected to another substrate that is arranged on the surface of the sealing portion 80 opposite to the surface on which the insulating substrate 11 is arranged.

[0052] The multiple input / output terminals 73U, 73V, 73W are exposed on the same side surface 80b as the U-phase terminal 30U, the V-phase terminal 30V, and the W-phase terminal 30W. The multiple input / output terminals 73U, 73V, 73W are arranged at positions that do not overlap with the U-phase terminal 30U, the V-phase terminal 30V, and the W-phase terminal 30W in a plan view.

[0053] The power module 100 further includes a plurality of input / output conductors 70U, 70V, 70W (sometimes collectively referred to as input / output conductors 70) that electrically connect the input / output terminals 73U, 73V, 73W to the current sensors 50U, 50V, 50W. The plurality of input / output conductors 70U, 70V, 70W transmit signals output from the current sensors 50U, 50V, 50W. Some of the plurality of input / output conductors 70U, 70V, 70W may be power supply lines for the current sensors 50U, 50V, 50W.

[0054] The input / output conductors 70U, 70V, and 70W extend in a direction intersecting the first direction in a plan view and include first portions 71U, 71V, and 71W (sometimes collectively referred to as first portions 71) electrically connected to the current sensor 50, and second portions 72U, 72V, and 72W (sometimes collectively referred to as second portions 72) connected to the first portions 71U, 71V, and 71W and the input / output terminals 73U, 73V, and 73W. The second portions 72U, 72V, and 72W may be wiring patterns provided on the insulating substrate 11, and at least a portion of the second portions 72U, 72V, and 72W may be provided along the conductors 24U, 24V, and 24W. The first portions 71U, 71V, and 71W may be wires electrically connecting the terminals of the current sensors 50U, 50V, and 50W to the second portions 72U, 72V, and 72W. The input / output terminals 73U, 73V, and 73W include an input terminal and an output terminal. The power module 100 may include at least one set of input terminals and output terminals exposed from the sealing portion 80, an input conductor that, in a planar view, extends along the insulating substrate 11 and in a second direction intersecting the first direction, and has a portion of the first portion 71U, 71V, 71W electrically connected to the current sensors 50U, 50V, 50W, and a portion of the first portion 71U, 71V, 71W and a portion of the second portion 72U, 72V, 72W connected to the input terminals, and an output conductor that, in a planar view, extends along the insulating substrate 11 and in the second direction intersecting the first direction, and has another portion of the first portion 71U, 71V, 71W electrically connected to the current sensors 50U, 50V, 50W, another portion of the first portion 71U, 71V, 71W and another portion of the second portion 72U, 72V, 72W connected to the output terminals.

[0055] The first portions 71U, 71V, and 71W do not necessarily have to be oriented in a second direction perpendicular to the first direction in plan view, as long as they are not oriented in the first direction. Having the first portions 71U, 71V, and 71W in the input / output conductors 70U, 70V, and 70W allows the input / output terminals 73U, 73V, and 73W and the U-phase terminal 30U, the V-phase terminal 30V, and the W-phase terminal 30W to be exposed from the sealing portion 80 without overlapping in plan view. Furthermore, the second portions 72U, 72V, and 72W are provided along the conductors 24U, 24V, and 24W extending in the first direction, thereby achieving space savings. This allows the power module 100 to be miniaturized.

[0056] Furthermore, the structure can be simplified and the number of parts can be reduced without the need for complication caused by incorporating the current sensor 50 into the power module 100. Furthermore, even if the distance between the current sensor 50 and the conductor 24 is shortened, insulation can be maintained by the insulating resin that constitutes the insulator 56 and the sealing portion 80. In addition, by arranging the magnetoelectric conversion element and the signal processing IC in close proximity to each other, the influence of individual temperature distributions within the power module 100 can be reduced, improving the accuracy of temperature compensation.

[0057] 3 is a schematic diagram showing a portion of a cross-sectional view of the power module 100 as viewed from the side in the X direction. The current sensor 50 may be arranged on the conductor 24 via an insulator 56. The power semiconductor 14 may be arranged on the conductor 24 via a conductive adhesive 15. The drain or collector of the power semiconductor 14 is electrically connected to the conductor 24 via the conductive adhesive 15. The power semiconductor 12 may be arranged on the conductor 20 via a conductive adhesive 13. As described above, by arranging the current sensor 50 between the terminal 30 and the power semiconductor 14 along the current path of the conductor 24, the current sensor 50 can be arranged near the terminal 30.

[0058] 4 is a perspective view that schematically shows the current sensor 50, the conductor 24, and the input / output conductor 70. A first portion 71, which is a wire for electrically connecting the current sensor 50 to the input / output conductor 70, extends in a second direction (X-axis direction) that is different from a first direction (Y-axis direction) along the current path of the conductor 24, and is electrically connected to a second portion 72, which is a wiring pattern that exists beside the conductor 24. By exposing the input / output conductor 70 from the side portion of the sealing portion 80 on the same side as the terminal 30, the space required for arranging the second portion 72 can be reduced.

[0059] 3 and 4, the conductor 24 is formed as a wiring pattern on the insulating substrate 11. On the other hand, the conductor 24 may be part of a bus bar directly connected to the terminal 30.

[0060] FIG. 5 is a diagram of a modified example, schematically illustrating a portion of a cross-sectional view of the power module 100 as viewed from the side in the X direction. In the example shown in FIG. 3, the conductors 24 are all provided as wiring patterns on the insulating substrate 11. In this modified example, some of the conductors 24 are not wiring patterns provided on the insulating substrate 11. The conductors 24 include conductor 24a, which is a wiring pattern electrically connected to the drain or collector on the bottom side of the power semiconductor 14 on the insulating substrate 11, and conductor 24b, which is a metal plate electrically connected to conductor 24a. The source or emitter on the top side of the power semiconductor 14 is electrically connected to conductor 22 via wire 19, as in the embodiment shown in FIG. 2. Conductor 24b is disposed on the opposite side of the insulating substrate 11 from the current sensor 50 in a side view and is physically and electrically connected to conductor 24a on the insulating substrate 11. Conductor 24a and conductor 24b can be connected by, for example, welding. The conductor 24, including conductors 24a and 24b, is an example of a first conductor. The drain or collector on the bottom side of the power semiconductor 14 is electrically connected to the conductor 24a via the conductive adhesive 15. The conductor 24b is, for example, a part of a bus bar directly connected to the terminal 30.

[0061] As shown in FIG. 5, the measurement current measured by the current sensor 50 may flow through a conductor 24b arranged on the opposite side to the insulating substrate 11 when viewed from the side, rather than on the insulating substrate 11 side.

[0062] As shown in FIG. 5, the conductor 24 and the current sensor 50 may be insulated from each other by being sealed with an insulating resin while being physically separated from each other.

[0063] FIG. 6 is a perspective view schematically illustrating the current sensor 50, the conductor 24b, and the input / output conductor 70 in the modified example shown in FIG. 5. In the embodiment shown in FIG. 4, the connection terminal of the current sensor 50 is disposed on the surface opposite the insulating substrate 11. On the other hand, in the modified example, the current sensor 50 is disposed on the insulating substrate 11 side, and the current sensor 50 is electrically connected to a first portion 71 disposed as a wiring pattern on the insulating substrate 11. Both the first portion 71 and the second portion 72 of the input / output conductor 70 are disposed as a wiring pattern on the insulating substrate 11. Even when the first portion 71 is disposed as a wiring pattern on the insulating substrate 11, the first portion 71 extends in a second direction intersecting the first direction in a plan view and is electrically connected to the current sensor 50. By extending the first portion 71 on the insulating substrate 11 in the second direction and the second portion 72 in the first direction, the input / output terminal electrically connected to the input / output conductor 70 and the terminal 30 can be exposed from the sealing portion 80 without overlapping in a plan view. By providing the second portion 72 along the conductor 24 extending in the first direction, space saving can be achieved, and the power module 100 can be made smaller.

[0064] In the above example, the current sensor 50 is disposed at a position overlapping the conductor 24 in a plan view, and the portion of the conductor 24 extending in the first direction is linear. However, the shape of the conductor 24 may be other shapes.

[0065] 7A to 7D show the shape of the conductor 24 according to a modified example. In FIGS. 7A to 7D, a current sensor 50 is shown as an example, which includes two magnetoelectric conversion elements 52 that are Hall elements, which are an example of vertical magnetic field detection elements. However, the current sensor 50 may include one Hall element, or one or more horizontal magnetic field detection elements such as magnetoresistance elements.

[0066] As shown in FIG. 7A , the conductor 24 may have an opening 241 at a position facing the current sensor 50 in a plan view, with the current sensor 50 disposed within the opening 241, and the current sensor 50 may be disposed on the insulating substrate 11 without the conductor 24 in between. The current sensor 50 is disposed so as to be surrounded by the conductor 24 in a plan view, with two magnetoelectric conversion elements 52 facing each other in a direction intersecting the direction of the current flowing through the conductor 24. The current sensor 50 may at least partially overlap with the conductor 24 in a side view. Alternatively, the current sensor 50 may not overlap with the conductor 24 in a side view. That is, the current sensor 50 may be disposed between the insulating substrate 11 and the conductor 24 when viewed from the side.

[0067] As shown in FIG. 7B , conductor 24 may have portion 242 that is narrower than other portions and narrower than the width of current sensor 50 in a plan view, and current sensor 50 may be provided at a position that overlaps portion 242 in a plan view. Current sensor 50 is disposed so as to partially overlap conductor 24 in a plan view. Current sensor 50 may at least partially overlap conductor 24 in a side view. Alternatively, current sensor 50 may not overlap conductor 24 in a side view. In other words, current sensor 50 may be disposed between insulating substrate 11 and conductor 24 in a side view.

[0068] 7C and 7D, the conductor 24 has a notch 243 on a longitudinal side or a lateral side of the conductor 24, and the current sensor 50 is disposed in the notch 243. The current sensor 50 may be disposed on the insulating substrate 11 without the conductor 24. The current sensor 50 is disposed so as to be partially surrounded by the conductor 24 in a plan view.

[0069] In the current sensor 50, the magnetoelectric conversion element 52 may be exposed and not sealed with mold resin. As shown in Fig. 8, the signal processing IC 51 and the magnetoelectric conversion element 52 may each be configured as a chip, and the magnetoelectric conversion element 52 may be disposed on the chip of the signal processing IC 51. The magnetoelectric conversion element 52 may be disposed on a surface of the chip of the signal processing IC 51 on which terminals are provided. Examples of the above-mentioned disposition method include disposing the magnetoelectric conversion element 52 as a chip on the chip of the signal processing IC 51, forming the magnetoelectric conversion element 52 by vapor deposition on the signal processing IC 51, or forming the magnetoelectric conversion element 52 as a doped layer on the surface of the signal processing IC 51.

[0070] When the signal processing IC 51 and the magnetoelectric conversion element 52 are in a semiconductor package sealed with molding resin, the terminal type is arbitrary, and may be, for example, SOP, SON, or QFN.

[0071] Even when the current sensor 50 is configured with a terminal type such as SOP, SON, or QFN, the current sensor 50 may be electrically connected to the input / output conductor 70 by a wire rather than a wiring pattern on the insulating substrate 11. For example, as shown in Fig. 9, the surface of the current sensor 50 on which the terminal 55 is provided may be disposed on the opposite side of the conductor 24 on the insulating substrate 11, and the second portion 72 of the input / output conductor 70 on the insulating substrate 11 and the terminal 55 of the current sensor 50 may be electrically connected via a wire 71. Note that in the embodiment shown in Fig. 9, the surface of the current sensor 50 on which the terminal 55 is not provided may be disposed on the conductor 24 via an insulator such as a die attach film.

[0072] FIG. 10 is a plan view schematically showing an example of the internal configuration of a power module 100 according to a first modified example of this embodiment.

[0073] In the first variant, the multiple input / output terminals 73U, 73V, 73W extend to the side opposite to the surface of the sealing portion 80 on which the insulating substrate 11 is arranged, and are electrically connected to another substrate arranged on the surface of the sealing portion 80 opposite to the surface on which the insulating substrate 11 is arranged, which is the same as the power module 100 shown in Figure 2.

[0074] On the other hand, in the first modified example, the positions at which the multiple input / output terminals 73U, 73V, 73W are exposed from the sealing portion 80 differ from those of the power module 100 shown in Fig. 2. The multiple input / output terminals 73U, 73V, 73W are, for example, pins.

[0075] Specifically, the sealing portion 80 has a partition portion 74 between the conductors 24U and 24V that separates the conductors 24U and 24V along the direction in which the conductors 24U and 24V extend, and a partition portion 74 between the conductors 24V and 24W that separates the conductors 24V and 24W along the direction in which the conductors 24V and 24W extend. The partition portion 74 extends from the side wall of the sealing portion 130. The partition portion 74 may extend from the side wall on which the side surface 80b of the sealing portion 80 is located toward the side wall on which the side surface 80a of the sealing portion 80 is located.

[0076] Some of the multiple input / output terminals 73U are exposed from partition portion 74 between conductor 24U and conductor 24V, and other parts of the multiple input / output terminals 73U are exposed from the side wall on which side surface 80d of sealing portion 130 is located. The positions at which some of the multiple input / output terminals 73U and other parts of the multiple input / output terminals 73U are exposed are closer to side surface 80b of sealing portion 80, where bus bar 40U is exposed, than power semiconductor 12U and power semiconductor 14U in plan view.

[0077] Some of the multiple input / output terminals 73V are exposed from partition portion 74 between conductor 24U and conductor 24V, and another portion of the multiple input / output terminals 73V are exposed from partition portion 74 between conductor 24V and conductor 24W. The positions at which some of the multiple input / output terminals 73V and another portion of the multiple input / output terminals 73V are exposed are closer to side surface 80b of sealing portion 80, where bus bar 40V is exposed, than power semiconductor 12V and power semiconductor 14V in a plan view.

[0078] Some of the multiple input / output terminals 73W are exposed from partition portion 74 between conductors 24V and 24W, and other parts of the multiple input / output terminals 73W are exposed from the side wall on which side surface 80c of sealing portion 130 is located. The positions at which some of the multiple input / output terminals 73W and other parts of the multiple input / output terminals 73W are exposed are closer to side surface 80b of sealing portion 80, where bus bar 40W is exposed, than power semiconductor 12W and power semiconductor 14W in plan view.

[0079] FIG. 11 is a plan view schematically showing an example of the internal configuration of a power module 100 according to a second modification of this embodiment.

[0080] In the second variant, the multiple input / output terminals 73U, 73V, 73W extend to the side opposite to the surface of the sealing portion 80 on which the insulating substrate 11 is arranged, and are electrically connected to another substrate arranged on the surface of the sealing portion 80 opposite to the surface on which the insulating substrate 11 is arranged, which is the same as the power module 100 shown in Figure 2.

[0081] On the other hand, in the second modified example, the positions at which the multiple input / output terminals 73U, 73V, 73W are exposed from the sealing portion 130 differ from those of the power module 100 shown in Fig. 2. The multiple input / output terminals 73U, 73V, 73W are, for example, pins.

[0082] Specifically, the sealing portion 80 has a partition portion 74 between the conductors 24U and 24V that separates the conductors 24U and 24V along the direction in which the conductors 24U and 24V extend, and a partition portion 74 between the conductors 24V and 24W that separates the conductors 24V and 24W along the direction in which the conductors 24V and 24W extend. The partition portion 74 extends from the side wall of the sealing portion 130. The partition portion 74 may extend from the side wall on which the side surface 80b of the sealing portion 80 is located toward the side wall on which the side surface 80a of the sealing portion 80 is located.

[0083] Some of the multiple input / output terminals 73U are exposed from partition portion 74 between conductor 24U and conductor 24V, and another portion of the multiple input / output terminals 73U are exposed from the side wall on which side surface 80d of sealing portion 130 is located. Yet another portion of the multiple input / output terminals 73U are also exposed from the side wall on which side surface 80b of sealing portion 130 is located. The positions at which some of the multiple input / output terminals 73U and another portion of the multiple input / output terminals 73U are exposed are closer to side surface 80b of sealing portion 80, where bus bar 40U is exposed, than power semiconductor 12U and power semiconductor 14U in a plan view.

[0084] Some of the multiple input / output terminals 73V are exposed from partition portion 74 between conductor 24U and conductor 24V, and another portion of the multiple input / output terminals 73V are exposed from partition portion 74 between conductor 24V and conductor 24W. Yet another portion of the multiple input / output terminals 73V is also exposed from the side wall on which side surface 80b of sealing portion 130 is located. The positions at which some of the multiple input / output terminals 73V and another portion of the multiple input / output terminals 73V are exposed are closer to side surface 80b of sealing portion 80, where bus bar 40V is exposed, than power semiconductor 12V and power semiconductor 14V in a plan view.

[0085] Some of the multiple input / output terminals 73W are exposed from partition portion 74 between conductors 24V and 24W, and another portion of the multiple input / output terminals 73W are exposed from the side wall on which side surface 80c of sealing portion 130 is located. Yet another portion of the multiple input / output terminals 73W are also exposed from the side wall on which side surface 80b of sealing portion 130 is located. The positions at which some of the multiple input / output terminals 73W and another portion of the multiple input / output terminals 73W are exposed are closer to side surface 80b of sealing portion 80, where bus bar 40W is exposed, than power semiconductor 12W and power semiconductor 14W in plan view.

[0086] As described above in the first and second modified examples, the positions at which the multiple input / output terminals 73U, 73V, 73W are exposed may be positions other than on the side wall where the side surface 80b of the sealing portion 80 is located, as long as the positions are closer to the side surface 80b of the sealing portion 80 where the bus bars 40U, 40V, 40W are exposed than the power semiconductors 12U, 12V, 12W and the power semiconductors 14U, 14V, 14W.

[0087] Although the present invention has been described above using embodiments, the technical scope of the present invention is not limited to the scope described in the above embodiments. It will be apparent to those skilled in the art that various modifications and improvements can be made to the above embodiments. It is clear from the claims that such modifications and improvements can also be included within the technical scope of the present invention.

[0088] It should be noted that the execution order of each process, such as operations, procedures, steps, and stages, in the devices, systems, programs, and methods shown in the claims, specifications, and drawings is not specifically stated as "before," "prior to," etc., and that the processes can be performed in any order unless the output of a previous process is used in a subsequent process. Even if the operational flow in the claims, specifications, and drawings is described using "first," "next," etc. for convenience, this does not mean that the processes must be performed in this order. [Explanation of symbols]

[0089] 10U U phase circuit 10V V phase circuit 10W W phase circuit 11 Insulating substrate 12U, 12V, 12W power semiconductor 14U, 14V, 14W power semiconductor 13, 15 Conductive adhesive 17U, 17V, 17W Wire 19U, 19V, 19W Wire 24U, 24V, 24W conductor 30U U phase terminal 30V V phase terminal 30W W phase terminal 32, 34 DC terminal 40U, 40V, 40W busbar 50U, 50V, 50W Current Sensor 51 Signal Processing IC 52 Magnetoelectric conversion element 55 terminals 56 Insulator 60 motor 70U, 70V, 70W Input / Output Conductors 73U, 73V, 73W input / output terminal 80 Sealing part 100 Power Module

Claims

1. an insulating substrate; a first power semiconductor mounted on the insulating substrate; a first conductor that at least partially overlaps with the first power semiconductor in a plan view, is electrically connected to a first terminal of the first power semiconductor, and extends in a first direction along a surface of the insulating substrate; a current sensor that is arranged to at least partially overlap or be at least partially surrounded by the first conductor in a plan view, and that outputs a signal corresponding to the magnitude of a magnetic field generated by a measurement current flowing through the first conductor as a signal indicating a current value of the measurement current; a sealing portion that seals the insulating substrate, the first power semiconductor, the first conductor, and the current sensor in a state in which the first conductor and the current sensor are insulated from each other; a first external terminal electrically connected to the first conductor and exposed from the sealing portion; Equipped with In a plan view, the current sensor is disposed between the first external terminal and the first power semiconductor in the first direction.

2. at least one set of input / output terminals exposed from the sealing portion; and at least one set of input / output conductors that, in a plan view, extend along the insulating substrate and in a second direction intersecting the first direction, have a first portion electrically connected to the current sensor, and a second portion connected to the first portion and at least one of the at least one set of input / output terminals, and transmit a signal output from the current sensor; The power module according to claim 1 , wherein the second portion does not overlap the first conductor in a plan view.

3. the first external terminal is exposed at a first side surface of the sealing portion; the at least one set of input / output terminals is exposed from the sealing portion on a side closer to the first side surface of the sealing portion than the first power semiconductor; The power module according to claim 2 .

4. the first external terminal and the at least one set of input / output terminals are exposed on a first side surface side of the sealing portion, The power module according to claim 2 , wherein at least a part of the second portion extends along the first direction.

5. the first portion is a wire; the second portion is a conductive pattern provided on the insulating substrate, The power module according to claim 2 , wherein the current sensor is electrically connected to the conductive pattern via the wire.

6. the first portion and the second portion are conductive patterns provided on the insulating substrate, The power module of claim 2 , wherein the current sensor is soldered or flip-chip bonded to the first portion.

7. The power module according to claim 1 , wherein the first power semiconductor is disposed on the first conductor.

8. The power module according to claim 1 , wherein the first conductor is provided on the insulating substrate.

9. The power module of claim 1 , further comprising an insulating layer between the current sensor and the first conductor.

10. The power module according to claim 9 , wherein the insulating layer is an adhesive for bonding the current sensor and the first conductor together.

11. The power module according to claim 9 , wherein the insulating layer is an insulating resin that constitutes the sealing portion.

12. 2. The power module according to claim 1, wherein the current sensor comprises at least one magnetoelectric conversion element and a signal processing IC that processes a signal output from the at least one magnetoelectric conversion element.

13. The power module of claim 12 , wherein the current sensor is a coreless current sensor.

14. 13. The power module according to claim 12, wherein the current sensor is a semiconductor package in which the at least one magnetoelectric conversion element and the signal processing IC are sealed with a molding resin.

15. 13. The power module according to claim 12, wherein the at least one magnetoelectric conversion element is electrically connected to the signal processing IC by wire bonding.

16. the current sensor has two magnetoelectric conversion elements of a vertical magnetic field detection type, 15. The power module according to claim 14, wherein the current sensor is arranged so as to at least partially overlap with or be at least partially surrounded by the first conductor in a planar view, with the two magnetoelectric conversion elements arranged along the insulating substrate and facing each other in a second direction intersecting the first direction.

17. the current sensor has at least one magnetoelectric conversion element of a transverse magnetic field detection type; The power module according to claim 14 , wherein the current sensor is arranged so that the at least one magnetoelectric transducer overlaps the first conductor in a plan view.

18. a second power semiconductor having a second terminal electrically connected to the first terminal and the first conductor of the first power semiconductor; a second conductor provided on the insulating substrate and electrically connected to a second terminal of the first power semiconductor; a third conductor provided on the insulating substrate, at least partially overlapping with the second power semiconductor in a plan view, and electrically connected to a first terminal of the second power semiconductor; a second external terminal exposed from the sealing portion and electrically connected to the second conductor; a third external terminal exposed from the sealing portion and electrically connected to the third conductor; The power module of claim 1 further comprising:

19. A plurality of the first power semiconductors; A plurality of the second power semiconductors; A plurality of the first conductors; A plurality of the current sensors; 20. The power module of claim 18, comprising:

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