Element and method for manufacturing the same, and organic semiconductor laser diode

Abstract

To provide an element having at least two different optoelectronic devices.SOLUTION: In an element having a substrate and at least two different optoelectronic devices, at least two different optoelectronic devices are monolithically fabricated on the substrate. An organic semiconductor laser diode having a substrate, an insulating diffraction grating, a first electrode, an organic layer, and a second electrode in this order is also disclosed.SELECTED DRAWING: Figure 6-1

Description

[Technical Field]

[0001] The present invention relates to a device comprising a substrate and at least two different optoelectronic devices monolithically fabricated on the substrate, a method for fabricating the device, and an organic semiconductor laser diode comprising, in that order, a substrate, an insulating grating, a first electrode, an organic layer, and a second electrode. [Background technology]

[0002] In conventional inorganic electronics, devices with different functions require different crystalline semiconductor materials and different fabrication processes. For example, to integrate different devices (e.g., light-emitting diodes, laser diodes, and transistors) on the same substrate, different crystalline inorganic materials must be grown on the same substrate. Growing different crystalline materials on the same substrate is difficult because they have distinct lattice constants. These issues limit the use of versatile substrates and the integration density of chips, increasing manufacturing costs.

[0003] Furthermore, conventional RGB laser diode technology using inorganic light-emitting semiconductors poses significant challenges in miniaturization and mass production. The gain materials for red, green, and blue laser diodes are GaN, GaInN, and AlGaInP, respectively. These crystalline semiconductors have different lattice constants. Therefore, it is extremely difficult to grow three different laser diodes on the same substrate. These challenges also limit the use of versatile substrates such as glass, plastic, and paper. Furthermore, attempts to incorporate conventional RGB laser diodes into compact systems are limited by the use of connectors and various driving conditions, which significantly limit the integration density of chips and microdisplays requiring high resolution. For example, to monolithically integrate two materials with different bandgap energies for green and red light emission, AlGaInP-based and InGaN-based LDs are integrated on a single substrate using adhesive bonding and chemical wet etching processes. To advance toward ultimate chip miniaturization, it is important to monolithically integrate each optoelectronic device using a common fabrication process.

[0004] Recently, current-injection semiconductor laser diodes using organic materials have been demonstrated. Patent Document 1 discloses a current-injection organic semiconductor laser diode comprising a pair of electrodes, an optical resonator structure, and one or more organic layers. The one or more organic layers include an optical amplification layer made of an organic semiconductor. This optical amplification layer has sufficient overlap between the exciton density distribution and the electric field intensity distribution of the resonant optical mode when current is injected to emit laser light. [Prior art documents] [Patent documents]

[0005] [Patent Document 1] International Publication No. 2018 / 147470 Summary of the Invention [Problem to be solved by the invention]

[0006] In view of these circumstances, the present inventors have made tireless research efforts with the aim of providing an element comprising at least two different optoelectronic devices that solves the above-mentioned problems caused by the use of inorganic semiconductor materials. [Means for solving the problem]

[0007] As a result of tireless research, the present inventors have made the following invention. (1) A device comprising a substrate and at least two different optoelectronic devices, wherein the at least two different optoelectronic devices are monolithically fabricated on the substrate. (2) The element according to (1), wherein the at least two different optoelectronic devices are at least two optically pumped organic solid-state lasers emitting light at different wavelengths. (3) The element of (1), wherein the at least two different optoelectronic devices are at least two organic semiconductor laser diodes emitting light at different wavelengths. (4) The element according to (1), wherein the at least two different optoelectronic devices are an organic solid-state laser and an organic light-emitting diode. (5) The element described in (1), wherein the at least two different optoelectronic devices include an organic solid-state laser diode, the organic solid-state laser diode including, in this order, a substrate, an insulating diffraction grating, a first electrode, an organic layer, and a second electrode. (6) The element according to any one of (1) to (5), wherein the at least two different optoelectronic devices include organic solid-state laser diodes, the element emitting light from the bottom. (7) The element according to any one of (1) to (5), wherein the at least two different optoelectronic devices include organic solid-state laser diodes, the element emitting light from the top surface. (8) An organic semiconductor laser diode comprising, in that order, a substrate, an insulating grating, a first electrode, an organic layer, and a second electrode. (9) A method for manufacturing a device comprising a substrate and at least two different optoelectronic devices, the method comprising monolithically fabricating said at least two different optoelectronic devices on said substrate. (10) The method of (9), wherein the element comprises a substrate and at least two different optoelectronic devices, the at least two different optoelectronic devices comprising organic solid-state laser diodes, comprising forming an insulating diffraction grating on the substrate and then forming organic layers for the at least two different optoelectronic devices. [Brief explanation of the drawings]

[0008] [Figure 1] 1 is a diagram of an optically pumped monolithically integrated RGB organic solid-state laser according to the present invention. [Figure 2] FIG. 1 is a diagram of a monolithically integrated optically pumped organic solid-state laser, an OLED, and an organic photodetector. [Figure 3] Schematic diagram of a) the OSLD used in US Pat. No. 6,239,999 and b) the novel OSLD design of the present invention. [Figure 4] 10A and 10B are diagrams showing the electric field distribution of the DFB resonant cavity at the resonant wavelength of a) OSLD1, b) OSLD2, c) OSLD3, and d) OSLD4. [Figure 5] FIG. 1 is a schematic diagram of a monolithically integrated RGB organic semiconductor laser diode. [Figure 6-1] Schematic diagram of a monolithically integrated organic semiconductor laser diode, organic light emitting diode and organic photodetector in a) top-side emission and b) bottom-side emission detection configurations, where the diffraction grating is on top of the ITO electrode. [Figure 6-2] Schematic diagram of a monolithically integrated organic semiconductor laser diode, organic light emitting diode and organic photodetector in c) top-side emission detection configuration and d) bottom-side emission detection configuration, with a diffraction grating underneath the ITO electrode. [Figure 7] FIG. 1 shows laser spectra of monolithically integrated red, green, and blue organic solid-state lasers. [Figure 8] a) Laser spectrum of a blue organic solid-state laser, b) Current-voltage curve of an OLED, c) External quantum efficiency (EQE)-current curve of an OLED, d) Electroluminescence spectrum of an OLED. DETAILED DESCRIPTION OF THE INVENTION

[0009] The present invention will be described in detail below. Each component will be described below with reference to representative embodiments and specific examples of the present invention, but the present invention is not limited to these embodiments and examples. In the description of this specification, a numerical range expressed as "to" means a range including the upper and / or lower limits.

[0010] The device of the present invention comprises a substrate and at least two different optoelectronic devices. These at least two different optoelectronic devices are monolithically fabricated on the substrate. The optoelectronic devices have the function of converting electricity to light or light to electricity. Examples of optoelectronic devices include optically pumped organic solid-state lasers (OSLs), organic semiconductor laser diodes (OSLDs), organic light-emitting diodes (OLEDs), organic photodetectors, and organic solar cells. The at least two optoelectronic devices in the device of the present invention may be different from each other but belong to the same optoelectronic device type. In some embodiments of the present invention, the at least two optoelectronic devices are at least two optically pumped organic solid-state lasers emitting light at different wavelengths. In some embodiments of the present invention, the at least two optoelectronic devices are at least two organic semiconductor laser diodes emitting light at different wavelengths. In some embodiments of the present invention, the at least two optoelectronic devices are an organic solid-state laser and an organic light-emitting diode. The device of the present invention may also comprise at least one additional optoelectronic device that is the same as either of the at least two optoelectronic devices, as long as the device comprises at least two different optoelectronic devices. The devices of the present invention may also comprise organic photodetectors, organic field effect transistors, organic thermoelectric generators, and the like.

[0011] At least two different optoelectronic devices are monolithically fabricated on a single substrate. In some embodiments of the present invention, at least two different optoelectronic devices are monolithically fabricated on a single substrate. In some embodiments of the present invention, the at least two different optoelectronic devices are encapsulated together. In some embodiments of the present invention, the at least two different optoelectronic devices include at least one common organic layer of the same composition. The common organic layer of each device may be the same thickness. In some embodiments of the present invention, the number of common organic layers may be at least two, at least three, or at least four. In some embodiments, the at least two different optoelectronic devices are spaced apart by less than 1 mm. The space may be less than 10 micrometers, less than 1 micrometer, or less than 100 nanometers. The present invention includes the following four aspects.

[0012] (1) First Aspect of the Invention (background) The use of RGB lasers in displays is very attractive, replacing conventional technologies such as light-emitting diodes (LEDs) and organic light-emitting diodes (OLEDs). Laser light sources offer high color purity with a very narrow spectral linewidth (~0.2 nm), as well as high brightness and power efficiency, which contribute to the miniaturization of display systems.

[0013] Conventional RGB laser diode technology using inorganic light-emitting semiconductors poses significant challenges in miniaturization and mass production. The gain materials for red, green, and blue laser diodes are GaN, GaInN, and AlGaInP, respectively. These crystalline semiconductors have different lattice constants. Therefore, it is extremely difficult to grow three different laser diodes on the same substrate. These challenges also limit the use of versatile substrates such as glass, plastic, and paper. Furthermore, attempts to incorporate conventional RGB laser diodes into compact systems are limited by the use of connectors and various driving conditions, which significantly restrict the integration density of chips and microdisplays requiring high resolution. For example, to monolithically integrate two materials with different bandgap energies for green and red light emission, AlGaInP-based and InGaN-based LDs are integrated on a single substrate using adhesive bonding and chemical wet etching processes. To advance toward ultimate chip miniaturization, it is important to monolithically integrate each optoelectronic device using a common fabrication process.

[0014] (invention) The use of organic semiconductors overcomes the problems inherent in inorganic semiconductors. Indeed, they enable the fabrication of high-density monolithic circuits on a variety of substrates, including glass, plastic, and even paper. This intriguing feature is due to the fact that organic semiconductors are amorphous and do not need to be crystalline. Furthermore, organic semiconductors can be deposited using a variety of simple techniques that are amenable to mass production, such as inkjet printing and thermal evaporation.

[0015] A first aspect of the present invention provides a device comprising a substrate and at least two optically pumped organic solid-state lasers (OSLs) emitting at different wavelengths, wherein the at least two organic solid-state lasers are monolithically fabricated on the substrate.

[0016] More specifically, we propose monolithically integrating RGB photo-pumped OSLs on the same substrate using the same fabrication process. Two, three, or more colors (wavelengths) can be integrated. Other colors can be used instead of, or in addition to, red, green, and blue.

[0017] A first aspect of the present invention includes the following embodiments. [Embodiment 1-1] Organic solid-state lasers that emit light at different wavelengths (for example, red, green, and blue) are fabricated on the same substrate (monolithic integration). [Embodiment 1-2] Monolithic integration on a flexible and / or transparent substrate. [Embodiments 1-3] Fabrication methods: solution processes (inkjet, spin coating) and thermal evaporation.

[0018] In some embodiments of the present invention, the structure of the OSL consists of: 1. Excitation light source 2. Substrate 3. Diffraction Grating 4. Organic gain materials (semiconductors) 5. Encapsulating materials

[0019] The grating can be above the organic gain material, or above the substrate and below the organic gain material. In one embodiment of the invention, the substrate, grating, and organic gain material are formed in that order from the bottom up. In one embodiment of the invention, the substrate, organic gain material, and grating are formed in that order from the bottom up. In one embodiment of the invention, the grating is in contact with the organic gain material. In one embodiment of the invention, the grating is in contact with the substrate. In one embodiment, the organic material is in contact with the grating and the grating is in contact with the substrate.

[0020] The advantages of the present invention are as follows: -Increasing device density for ultimate chip miniaturization through monolithic integration; - the use of flexible and transparent substrates; - Simple fabrication processes suitable for mass production, such as inkjet printing and thermal evaporation; -A major step forward towards an all-organic electronic platform.

[0021] FIG. 1 shows an optically pumped monolithically integrated RGB organic solid-state laser according to the present invention.

[0022] (Example: Monolithic integration of red, green, and blue organic solid-state lasers) Red, green, and blue surface-emitting organic solid-state lasers (OSLs) were fabricated on the same glass substrate using a thermal evaporation process for each of the three colors. The OSLs contain emitters deposited by thermal evaporation on a second-order distributed feedback (DFB) grating and then sealed using a Cytop® and sapphire lid. The DFB grating was etched directly into the silicon dioxide surface using electron beam lithography and reactive ion etching. Figure 7 shows the laser spectra of the monolithically integrated red, green, and blue organic solid-state lasers. The blue, green, and red organic solid-state lasers have periods Λ = 270, 310, and 380 nm, respectively, and emit laser emissions at λ = 470, 511, and 601 nm.

[0023] (2) Second Aspect of the Invention (background) The miniaturization of electronic components has enabled small wearable smart devices, such as smartwatches, handheld medical monitors, head-mounted displays, etc., to perform almost all the functions of a smartphone. To progress towards ultimate chip miniaturization, it is important to monolithically integrate each optoelectronic device using a common fabrication process.

[0024] In conventional inorganic electronics, devices with different functions require different crystalline semiconductor materials and different fabrication processes. For example, to integrate different devices (e.g., light-emitting diodes, laser diodes, and transistors) on the same substrate, different crystalline inorganic materials must be grown on the same substrate. Growing different crystalline materials on the same substrate is difficult because they have distinct lattice constants. These issues limit the use of versatile substrates and the integration density of chips, increasing manufacturing costs.

[0025] The use of innovative materials such as organic semiconductors can overcome the problems inherent in inorganic semiconductors. Indeed, organic semiconductors enable the fabrication of monolithic circuits on a variety of substrates, including glass, plastic, and even paper. This intriguing feature is due to the fact that organic semiconductors are amorphous and do not need to be crystalline. Therefore, organic semiconductors can be deposited using a variety of simple techniques, such as spin coating, inkjet printing, and thermal evaporation. Furthermore, the monolithic integration of multiple organic semiconductor devices will be a crucial feature for the early realization of an all-organic electronics platform.

[0026] Today, many electronic devices can be made with organic materials, for example, organic solar cells, organic sensors, organic field-effect transistors (OFETs), organic light-emitting diodes (OLEDs), organic memory, organic lasers, etc. OLEDs and organic optical sensors are commercially available and have surpassed the inorganic device market. The integration of OSLs into all-organic electronic platforms can add and enhance device functionality for applications such as sensing and displays.

[0027] (invention) A second aspect of the present invention provides a device comprising a substrate, an optically pumped organic solid-state laser, and an organic light-emitting diode, wherein the organic solid-state laser and the organic light-emitting diode are monolithically fabricated on the substrate.

[0028] In some embodiments, the OSL, OLED and organic photodetector are fabricated on the same substrate, with the goal of demonstrating optically excited OSL monolithically integrated into an all-organic electronic platform.

[0029] We propose here the monolithic integration of OSLs into an all-organic electronic platform, which can consist of photoexcited OSLs, OLEDs, organic solar cells, optical photodetectors, organic field-effect transistors, organic memory, and organic thermoelectric generators.

[0030] Figure 2 shows the integration of an optically pumped OSL, an OLED, and an organic photodetector fabricated in the same region. In this embodiment, these devices are fabricated on the same substrate. The OLED consists of an organic light-emitting layer sandwiched between transport layer (TL)-electrode pairs. The OLED can emit light from the top or bottom. The OSL consists of a distributed feedback (DFB) grating and an organic gain material. The DFB can be located on the substrate or on top of the organic gain material. The photodetector consists of an organic active layer sandwiched between transport layer (TL)-electrode pairs. All three devices are fabricated on a common substrate.

[0031] The second aspect of the present invention includes the following embodiments. [Embodiment 2-1] An organic solid-state laser, an organic light-emitting diode, and an optical photodetector are monolithically integrated (fabricated on the same substrate). [Embodiment 2-2] Monolithic integration on a flexible and / or transparent substrate. [Embodiment 2-3] The present invention includes the following combinations. [Embodiment 2-4] OLED + OSL [Embodiment 2-5] OLED + OSL + organic solar cell [Embodiment 2-6] OLED + OSL + organic photodetector [Embodiment 2-7] OLED + OSL + Organic Field Effect Transistor [Embodiment 2-8] OLED + OSL + organic thermal power generator [Embodiment 2-9] OLED + OSL + organic solar cell + organic photodetector + organic field-effect transistor + organic thermal power generator FIG. 2 is a diagram of a monolithically integrated OLED, OSL, and organic photodetector.

[0032] (Example: Monolithic integration of organic laser and OLED) These devices were fabricated by vacuum deposition. First, a glass substrate coated with 100 nm-thick patterned ITO was cleaned using a neutral detergent, pure water, acetone, and isopropanol, followed by ultrasonic treatment and UV-ozone treatment. A mask was used to protect the OLED area, and SiO2 was deposited by sputtering. A DFB grating was formed on the SiO2 layer using electron beam lithography and reactive ion etching (EBPE) on the non-ITO areas. Next, the organic layers, injection layers, and metal electrode layers were vacuum-deposited using a mask. This metal mask protects the DFB grating area (no metal was deposited on the DFB grating area). These devices were encapsulated with a glass lid and UV-curable epoxy in a nitrogen-filled glove box. Figure 8(a), (b), (c), and (d) show the laser spectrum of the blue organic solid-state laser, the current-voltage curve of the OLED, the external quantum efficiency (EQE)-current curve of the OLED, and the electroluminescence spectrum of the OLED, respectively.

[0033] (3) The third aspect of the invention (background) The use of red, green, and blue (RGB) lasers in displays is very attractive, replacing conventional technologies such as light-emitting diodes (LEDs) and organic light-emitting diodes (OLEDs). Laser light sources offer high color purity due to their very narrow spectral linewidth (~0.2 nm), as well as high brightness and power efficiency, which contribute to the miniaturization of display systems.

[0034] Conventional RGB laser diode technology using inorganic light-emitting semiconductors poses significant challenges in miniaturization and mass production. The gain materials for red, green, and blue laser diodes are GaN, GaInN, and AlGaInP, respectively. These crystalline semiconductors have different lattice constants. Therefore, it is extremely difficult to grow three different laser diodes on the same substrate. These challenges also limit the use of versatile substrates such as glass, plastic, and paper. Furthermore, attempts to incorporate conventional RGB laser diodes into compact systems are limited by the use of connectors and various driving conditions, which significantly restrict the integration density of chips and microdisplays requiring high resolution. For example, to monolithically integrate two materials with different bandgap energies for green and red light emission, AlGaInP-based and InGaN-based LDs are integrated on a single substrate using adhesive bonding and chemical wet etching processes. To advance toward ultimate chip miniaturization, it is important to monolithically integrate each optoelectronic device using a common fabrication process.

[0035] (invention) The use of organic semiconductors overcomes the problems inherent in inorganic semiconductors. Indeed, they enable the fabrication of high-density monolithic circuits on a variety of substrates, including glass, plastic, and even paper. This intriguing feature is due to the fact that organic semiconductors are amorphous and do not need to be crystalline. Furthermore, organic semiconductors can be deposited using a variety of simple techniques that are amenable to mass production, such as inkjet printing and thermal evaporation.

[0036] A third aspect of the present invention provides an organic semiconductor laser diode comprising, in that order, a substrate, an insulating diffraction grating, a first electrode, an organic layer, and a second electrode, and the monolithic integration of two or more different organic semiconductor laser diodes.

[0037] The third aspect of the present invention includes the following embodiments. [Embodiment 3-1] Organic semiconductor laser diodes emitting light at different wavelengths (red, green, and blue) are fabricated in the same region. In this embodiment, these devices are fabricated on the same substrate (monolithic integration). A distributed feedback cavity is formed above the substrate and below the electrodes. The monolithically integrated organic semiconductor laser diode can emit light from the top or bottom. [Embodiment 3-2] A monolithically integrated organic semiconductor laser diode can be flexible. [Embodiment 3-3] A monolithically integrated organic semiconductor laser diode can be transparent.

[0038] The third aspect of the present invention provides the following two inventive concepts. <1> A novel OSLD design including a transparent electrode above the diffraction grating The first demonstration of an OSLD (Patent Document 1) used an insulating grating on top of the ITO electrode (called the top surface in Patent Document 1). The role of the grating is to generate optical feedback. As shown in Figure 3(a), forming an insulating grating on top of the electrode is complicated because the insulator above the electrode must be completely removed to allow charge injection from the electrode into the light-emitting layer. In the novel OSLD design proposed in this invention, the grating is located below the electrode (in this embodiment, on the bottom surface), as shown in Figure 3(b). When the electrode is located on top of the insulating grating, charge carriers are injected from the entire device region. Therefore, excitons can be generated uniformly within the device. This increases the overlap between the exciton density and the optical resonant mode distribution, thereby increasing gain.

[0039] Optical simulations were performed to design the OSLD structure shown in Figure 4(a–d). The thickness of the ITO electrode, d, was varied to adjust the resonant wavelength, λ, and increase the Q-factor and confinement factor, Γ. ITO and the thickness of the organic film, d FILMwere optimized, respectively. The results of the optical optimization are shown in Table 1. Figure 4 shows the electric field distribution of the DFB resonant cavities at the resonant wavelengths of a) OSLD1, b) OSLD2, c) OSLD3, and d) OSLD4. In OSLD1-4, the DFB grating is fabricated on the substrate and below the ITO electrode. In OSLD-ref, the DFB grating is fabricated on the ITO electrode (previously patented OSLD, Patent Document 1). OSLD1-4 all exhibited higher Q values ​​and confinement factors than OSLD-ref. The resonant cavity of OSLD4 exhibited the best optical performance.

[0040] [Table 1]

[0041] <2> Monolithic integration of two or more different organic semiconductor laser diodes Figure 5 shows the monolithic integration of RGB colors as a preferred embodiment. Two, three or more colors (wavelengths) can be integrated. Other colors can be used instead of or in addition to red, green and blue.

[0042] The structure of the OSLD can be: 1. A top-emitting OSLD structure consisting of a substrate, electrodes, a distributed feedback (DFB) grating made of a low refractive index material, an electron transport layer, an organic gain layer, a hole transport layer, and a transparent or semi-transparent electrode, in that order. 2. Bottom-emitting OSLD structure consisting of a substrate, electrodes, a DFB grating made of a low refractive index material, a hole transport layer, an organic gain layer, an electron transport layer, and a transparent or semi-transparent electrode in that order.

[0043] In either structure, the DFB grating can be formed in the same region of the substrate (above the substrate in this embodiment) and on one side of the ITO electrode (below the electrode in this embodiment). For example, the present invention includes the following OSLD structures: 1. A top-emitting OSLD structure consisting of a substrate, a distributed feedback (DFB) grating made of a low refractive index material, a transparent or semi-transparent electrode, an electron transport layer, an organic gain layer, a hole transport layer, and a transparent or semi-transparent electrode, in that order. 2. Bottom-emitting OSLD structure consisting of a substrate, a DFB grating made of a low refractive index material, a transparent or semi-transparent electrode, a hole transport layer, an organic gain layer, an electron transport layer, and a transparent or semi-transparent electrode, in that order.

[0044] The advantages of the third aspect of the present invention are as follows: -Increasing device density for ultimate chip miniaturization through monolithic integration; the use of a flexible substrate; - Simple fabrication processes suitable for mass production, such as inkjet printing and thermal evaporation; -A major step forward towards an all-organic electronic platform.

[0045] (4) Fourth aspect of the invention (background) The miniaturization of electronic components is enabling small wearable smart devices, such as smartwatches and handheld medical monitors, to perform almost all the functions of a smartphone. To progress towards ultimate chip miniaturization, it is important to monolithically integrate each optoelectronic device using a common fabrication process.

[0046] Compared with conventional electronics, organic electronics offer low production costs, a fast, simple, and mass-production-friendly fabrication process, and open up the possibility of creating ultraflexible, foldable, stretchable, and biocompatible devices. Through molecular design, versatile molecules with various properties and various emission wavelengths can be easily realized. In inorganic electronics, light-emitting diodes (LEDs) and laser diodes (LDs) of different colors require different crystalline semiconductor materials and different fabrication process chambers. Therefore, monolithic integration of inorganic LEDs and LDs on a common substrate is not possible.

[0047] In contrast, the versatile properties of organic materials enable the fabrication of numerous devices with diverse optoelectronic functions, such as organic lasers, OLEDs, organic solar cells, and optical sensors. In fact, organic electronic device architectures consist of stacked organic active layers between pairs of interfacial layers and electrodes. This device architecture is a common feature of organic electronic devices. Therefore, organic semiconductors enable the fabrication of monolithic circuits on a variety of substrates, including glass, plastic, and even paper. This intriguing feature is due to the fact that organic semiconductors are amorphous and do not need to be crystalline. Therefore, organic semiconductors can be deposited using a variety of simple techniques, such as spin coating, inkjet printing, and thermal evaporation. Monolithic integration of multiple organic semiconductor devices is a crucial feature for the early realization of an all-organic electronic platform. Today, many electronic devices can be made with organic materials, for example, organic solar cells, organic sensors, organic field-effect transistors (OFETs), organic light-emitting diodes (OLEDs), organic memory, organic lasers, etc. OLEDs and organic optical sensors are commercially available and have surpassed the inorganic device market.

[0048] (invention) Recently, organic semiconductor laser diodes (OSLDs) have been demonstrated. Interestingly, OSLDs have a similar structure to OLEDs. The main difference is that OSLDs require a resonant cavity to provide optical feedback. Therefore, the fabrication methods for OSLDs are compatible with OLED technology.

[0049] A fourth aspect of the present invention provides a device comprising a substrate and at least two organic semiconductor laser diodes emitting at different wavelengths, the at least two organic semiconductor laser diodes being monolithically fabricated on the substrate. The fourth aspect of the present invention also provides a device comprising a substrate, an organic semiconductor laser diode, and an organic light-emitting diode, the organic semiconductor laser diode and the organic light-emitting diode being monolithically fabricated on the substrate.

[0050] In some embodiments, for the purpose of demonstrating a monolithically integrated OSLD, OLED and optical photodetector, the OSLD, OLED and organic photodetector are fabricated on the same substrate.

[0051] A fourth aspect of the present invention includes the following embodiments. [Embodiment 4-1] An organic semiconductor laser diode, an organic light-emitting diode, and an optical photodetector are monolithically integrated (fabricated on the same substrate). A system for bottom-side emission detection and top-side emission detection is proposed here. A distributed feedback resonator can be fabricated on the upper side of the substrate (e.g., on the upper surface of the substrate) and on the lower side of the electrode (e.g., on the lower surface of the electrode). [Embodiment 4-2] Monolithic integration on a flexible and / or transparent substrate Figures 6(a-d) show organic optoelectronic systems consisting of an OSLD, an OLED, and an optical photodetector on the same region of a substrate using the same technology. These figures show top- and bottom-side emission detection configurations with a diffraction grating on one side of the ITO electrode (on the top surface in this embodiment). Figures 6(c, d) show top- and bottom-side emission detection configurations with a diffraction grating on the bottom side of the ITO electrode (on the bottom surface in this embodiment). Forming a diffraction grating on the bottom side of the ITO electrode (on the bottom surface in this embodiment) enhances injection.

[0052] 1. The top-side emission detection configuration includes (Figure 6(a)): a. Top-emitting OLED structure consisting of a substrate, an electrode, an electron transport layer, an organic light-emitting layer, a hole transport layer and a transparent or semi-transparent electrode in that order. b. Top-emitting OSLD structure consisting of a substrate, electrodes, a distributed feedback (DFB) grating made of low refractive index material, an electron transport layer, an organic gain layer, a hole transport layer, and a transparent or semi-transparent electrode, in that order. c. A top-detecting organic photodetector consisting of, in order, a substrate, an electrode, an electron transport layer, an organic active (absorbing) layer, a hole transport layer, and a transparent or semi-transparent electrode.

[0053] 2. Bottom emission detection configuration includes (Figure 6(b)): a. Bottom-emitting OLED structure consisting of a transparent or semi-transparent substrate, a transparent or semi-transparent electrode, a hole transport layer, an organic light-emitting layer, an electron transport layer and an electrode, in that order. b. Bottom-emitting OSLD structure consisting of a transparent or semi-transparent substrate, a transparent or semi-transparent electrode, a DFB grating made of a low refractive index material, a hole transport layer, an organic gain layer, an electron transport layer and an electrode, in that order. c. A bottom-detecting organic photodetector consisting of a transparent or semi-transparent substrate, a transparent or semi-transparent electrode, a hole transport layer, an organic active (absorbing) layer, an electron transport layer, and an electrode, in that order.

[0054] 3. The top-side emission detection configuration includes (Figure 6(c)): a. Top-emitting OLED structure consisting of a substrate, an electrode, an electron transport layer, an organic light-emitting layer, a hole transport layer and a transparent or semi-transparent electrode in that order. b. Top-emitting OSLD structure consisting of a substrate, a DFB grating made of a low refractive index material, an electrode, an electron transport layer, an organic gain layer, a hole transport layer, and a transparent or semi-transparent electrode in that order. c. A top-detecting organic photodetector consisting of, in order, a substrate, an electrode, an electron transport layer, an organic active (absorbing) layer, a hole transport layer, and a transparent or semi-transparent electrode.

[0055] 4. Bottom emission detection configuration includes (Figure 6(d)): a. Bottom-emitting OLED structure consisting of a transparent or semi-transparent substrate, a transparent or semi-transparent electrode, a hole transport layer, an organic light-emitting layer, an electron transport layer and an electrode, in that order. b. Bottom-emitting OSLD structure consisting of a transparent or semi-transparent substrate, a DFB grating made of a low refractive index material, a transparent or semi-transparent electrode, a hole transport layer, an organic gain layer, an electron transport layer and an electrode, in that order. c. A bottom-detecting organic photodetector consisting of a transparent or semi-transparent substrate, a transparent or semi-transparent electrode, a hole transport layer, an organic active (absorbing) layer, an electron transport layer, and an electrode, in that order.

[0056] The present invention includes the following combinations: OLED+OSLD OLED+OSLD+organic solar cell OLED + OSLD + organic photodetector OLED+OSLD+organic field-effect transistor OLED + OSLD + organic thermal power generator OLED + OSLD + organic solar cell + organic photodetector + organic field-effect transistor + organic thermal power generator

[0057] The present invention includes the following embodiments. [1] A device comprising a substrate and at least two optically pumped organic solid-state lasers emitting light at different wavelengths, the at least two organic solid-state lasers being monolithically fabricated on the substrate. [2] The device according to [1], comprising at least three organic solid-state lasers emitting light at different wavelengths. [3] The device according to [2], comprising an organic solid-state laser that emits blue light, an organic solid-state laser that emits green light, and an organic solid-state laser that emits red light. [4] The element according to any one of [1] to [3], wherein the substrate is flexible. [5] The element according to any one of [1] to [4], wherein the substrate is transparent. (Note) In this application, the term "transparent" includes both transparent and semi-transparent. The transmittance of a "transparent" substrate or a "transparent" electrode in this application is preferably at least 70%, more preferably at least 90%, even more preferably at least 95%, and even more preferably at least 99%. [6] A method of manufacturing a device comprising a substrate and at least two optically pumped organic solid-state lasers emitting at different wavelengths, the method comprising monolithically fabricating the organic solid-state lasers on the substrate. [7] The element manufacturing method according to [6], wherein the element comprises at least three organic solid-state lasers emitting light at different wavelengths. [8] The element manufacturing method according to [7], wherein the element comprises an organic solid state laser that emits blue light, an organic solid state laser that emits green light, and an organic solid state laser that emits red light. [9] The element manufacturing method according to any one of [6] to [8], wherein the substrate is flexible.

[10] The element manufacturing method according to any one of [6] to [9], wherein the substrate is transparent.

[11] The element manufacturing method according to any one of [6] to

[10] , comprising monolithically fabricating the organic solid-state laser on the substrate by a solution process.

[12] The element manufacturing method according to any one of [6] to

[10] , comprising monolithically fabricating the organic solid-state laser on the substrate by an inkjet process.

[13] The element manufacturing method according to any one of [6] to

[10] , comprising monolithically fabricating the organic solid-state laser on the substrate by a spin coating process.

[14] The method for manufacturing an element according to any one of [6] to

[10] , comprising monolithically fabricating the organic solid-state laser on the substrate by a thermal evaporation process.

[0058]

[15] A device comprising a substrate, an optically pumped organic solid-state laser, and an organic light-emitting diode, wherein the organic solid-state laser and the organic light-emitting diode are monolithically fabricated on the substrate.

[16] The device according to

[15] , comprising the substrate, the organic solid-state laser, the organic light-emitting diode, and the optical photodetector, wherein the organic solid-state laser, the organic light-emitting diode, and the optical photodetector are monolithically fabricated on the substrate.

[17] The device according to

[15] , comprising the substrate, the organic solid-state laser, the organic light-emitting diode, and the organic solar cell, wherein the organic solid-state laser, the organic light-emitting diode, and the organic solar cell are monolithically fabricated on the substrate.

[18] The device according to

[15] , comprising the substrate, the organic solid-state laser, the organic light-emitting diode, and the organic field-effect transistor, wherein the organic solid-state laser, the organic light-emitting diode, and the organic field-effect transistor are monolithically fabricated on the substrate.

[19] The device according to

[15] , comprising the substrate, the organic solid-state laser, the organic light-emitting diode, and the organic thermoelectric generator, wherein the organic solid-state laser, the organic light-emitting diode, and the organic thermoelectric generator are monolithically fabricated on the substrate.

[20] The element according to any one of

[15] to

[19] , wherein the substrate is flexible.

[21] The element according to any one of

[15] to

[19] , wherein the substrate is transparent.

[22] A method for manufacturing a device comprising a substrate, an optically pumped organic solid-state laser, and an organic light-emitting diode, the method comprising monolithically fabricating the organic solid-state laser and the organic light-emitting diode on the substrate.

[23] The device manufacturing method according to

[22] , comprising monolithically fabricating the organic solid-state laser, the organic light-emitting diode, and the organic photodetector on the substrate.

[24] The element manufacturing method according to

[22] or

[23] , which comprises monolithically fabricating the organic solid-state laser, the organic light-emitting diode, and the organic solar cell on the substrate.

[25] The element manufacturing method according to any one of

[22] to

[24] , comprising monolithically fabricating the organic solid-state laser, the organic light-emitting diode, and the organic field-effect transistor on the substrate.

[26] The element manufacturing method according to any one of

[22] to

[25] , comprising monolithically fabricating the organic solid-state laser, the organic light-emitting diode, and the organic thermal power generator on the substrate.

[27] The element manufacturing method according to any one of

[22] to

[26] , wherein the above-mentioned fabrication is carried out monolithically by a solution process.

[28] The element manufacturing method according to any one of

[22] to

[26] , wherein the above-mentioned manufacturing is carried out monolithically by an inkjet process.

[29] The element manufacturing method according to any one of

[22] to

[26] , wherein the above-mentioned fabrication is carried out monolithically by a spin coating process.

[30] The element manufacturing method according to any one of

[22] to

[26] , wherein the above-mentioned fabrication is carried out monolithically by a thermal evaporation process.

[0059]

[31] An organic semiconductor laser diode comprising, in that order, a substrate, an insulating grating, a first electrode, an organic layer, and a second electrode.

[32] The organic semiconductor laser diode according to

[31] , wherein the insulating diffraction grating is in contact with the first electrode.

[33] The organic semiconductor laser diode according to

[31] or

[32] , wherein the insulating diffraction grating is in contact with the substrate.

[34] The organic semiconductor laser diode according to any one of

[31] to

[33] , wherein the first electrode and the substrate are transparent.

[35] The organic semiconductor laser diode according to

[34] , which emits light from the bottom surface (from the first electrode side).

[36] The organic semiconductor laser diode according to any one of

[31] to

[35] , wherein the second electrode is transparent.

[37] The organic semiconductor laser diode according to

[36] , which emits light from the top surface (from the second electrode side).

[38] The organic semiconductor laser diode according to any one of

[31] to

[37] , wherein no diffraction grating is formed on the surface of the first electrode facing the organic layer.

[39] The organic semiconductor laser diode according to any one of

[31] to

[38] , wherein charge carriers are injected into the organic layer from the surface of the first electrode without being impeded by a diffraction grating.

[40] An organic semiconductor laser diode described in any one of

[31] to

[39] , wherein the thickness of the first electrode and the thickness of the organic film are optimized by adjusting the resonance wavelength and increasing the Q value and the confinement factor.

[41] The organic semiconductor laser diode according to any one of

[31] to

[39] , having a Q value of at least 450.

[42] The organic semiconductor laser diode according to any one of

[31] to

[39] , having a confinement factor of at least 60%.

[43] forming an insulating diffraction grating on or above a substrate; forming a first electrode on or above the insulating grating; forming an organic layer on or above the first electrode; forming a second electrode on or above the organic layer; A method for fabricating an organic semiconductor laser diode, comprising:

[44] The method for fabricating an organic semiconductor laser diode according to

[43] , wherein the first electrode is formed directly on the insulating grating so as to completely cover the insulating grating.

[45] The method for producing an organic semiconductor laser diode according to

[43] or

[44] , wherein the insulating diffraction grating is formed directly on the substrate.

[46] The method for producing an organic semiconductor laser diode according to any one of

[43] to

[45] , wherein the first electrode and the substrate are transparent.

[47] The method for producing an organic semiconductor laser diode according to any one of

[43] to

[46] , wherein the second electrode is transparent.

[48] ​​The method for producing an organic semiconductor laser diode according to any one of

[43] to

[47] , wherein no diffraction grating is formed on the surface of the first electrode facing the organic layer.

[49] A method for producing an organic semiconductor laser diode according to any one of

[43] to

[48] , wherein the thickness of the first electrode and the thickness of the organic layer are optimized by adjusting the resonant wavelength and increasing the Q value and the confinement factor.

[50] An organic semiconductor laser diode produced by the method according to any one of

[43] to

[49] .

[0060]

[51] A device comprising a substrate and at least two organic semiconductor laser diodes emitting at different wavelengths, the at least two organic semiconductor laser diodes being monolithically fabricated on the substrate.

[52] The device according to

[51] , comprising at least three organic semiconductor laser diodes emitting light at different wavelengths.

[53] The device according to

[52] , comprising an organic semiconductor laser diode that emits blue light, an organic semiconductor laser diode that emits green light, and an organic semiconductor laser diode that emits red light.

[54] The element according to any one of

[51] to

[53] , wherein the substrate is flexible.

[55] The element according to any one of

[51] to

[54] , wherein the substrate is transparent.

[56] The device according to

[55] , wherein the at least two organic semiconductor laser diodes emit light from the bottom.

[57] The device according to

[56] , wherein the at least two organic semiconductor laser diodes comprise, in this order, a transparent substrate, a transparent first electrode, a distributed feedback (DFB) diffraction grating, a hole transport layer, an organic gain layer, an electron transport layer, and a second electrode.

[58] The device according to

[56] , wherein the at least two organic semiconductor laser diodes comprise, in this order, a transparent substrate, a distributed feedback (DFB) grating, a transparent first electrode, a hole transport layer, an organic gain layer, an electron transport layer, and a second electrode.

[59] The element according to any one of

[51] to

[55] , wherein the at least two organic semiconductor laser diodes emit light from the top surface.

[60] The device according to

[59] , wherein the at least two organic semiconductor laser diodes comprise, in this order, a substrate, a first electrode, a distributed feedback (DFB) grating, an electron transport layer, an organic gain layer, a hole transport layer, and a transparent second electrode.

[61] The device according to

[59] , wherein the at least two organic semiconductor laser diodes comprise, in this order, a substrate, a distributed feedback (DFB) grating, a first electrode, an electron transport layer, an organic gain layer, a hole transport layer, and a transparent second electrode.

[62] An element described in any one of

[51] to

[61] , wherein one or more of the at least two organic semiconductor laser diodes is an organic semiconductor laser diode described in any one of

[31] to

[42] and

[50] .

[63] The element according to any one of

[51] to

[61] , wherein all of the at least two organic semiconductor laser diodes are the organic semiconductor laser diodes according to any one of

[31] to

[42] and

[50] .

[0061]

[64] A method of manufacturing a device comprising a substrate and at least two organic semiconductor laser diodes emitting at different wavelengths, the method comprising monolithically fabricating the organic semiconductor laser diodes on the substrate.

[65] The method for manufacturing an element according to

[64] , wherein the element comprises at least three organic semiconductor laser diodes emitting light at different wavelengths.

[66] The element manufacturing method according to

[65] , wherein the element comprises an organic semiconductor laser diode that emits blue light, an organic semiconductor laser diode that emits green light, and an organic semiconductor laser diode that emits red light.

[67] The element manufacturing method according to any one of

[64] to

[66] , wherein the substrate is flexible.

[68] The element manufacturing method according to any one of

[64] to

[67] , wherein the substrate is transparent.

[69] The fabrication of the at least two organic semiconductor laser diodes comprises: forming an insulating grating on or above a substrate; forming a first electrode on or above the insulating grating; forming an organic layer on or above the first electrode; forming a second electrode on or above the organic layer; The element manufacturing method according to any one of

[64] to

[68] , which is carried out by

[70] The element manufacturing method according to

[69] , wherein the at least two organic semiconductor laser diodes are manufactured by the method according to any one of

[44] to

[49] .

[71] The fabrication of the at least two organic semiconductor laser diodes includes: forming a first electrode on or above a substrate; forming an insulating grating on or above the first electrode; forming an organic layer on or above the insulating grating; forming a second electrode on or above the organic layer; The element manufacturing method according to any one of

[64] to

[68] , which is carried out by

[72] The element manufacturing method according to any one of

[64] to

[71] , comprising monolithically fabricating the organic semiconductor laser diode on the substrate by a solution process.

[73] The element manufacturing method according to any one of

[64] to

[71] , comprising monolithically fabricating the organic semiconductor laser diode on the substrate by an inkjet process.

[74] The element manufacturing method according to any one of

[64] to

[71] , comprising monolithically fabricating the organic semiconductor laser diode on the substrate by a spin coating process.

[75] The method for manufacturing an element according to any one of

[64] to

[71] , comprising monolithically fabricating the organic semiconductor laser diode on the substrate by a thermal evaporation process.

[0062]

[76] A device comprising a substrate, an organic semiconductor laser diode, and an organic light emitting diode, wherein the organic semiconductor laser diode and the organic light emitting diode are monolithically fabricated on the substrate.

[77] A device according to

[76] , comprising the substrate, the organic semiconductor laser diode, the organic light-emitting diode, and the optical photodetector, wherein the organic semiconductor laser diode, the organic light-emitting diode, and the optical photodetector are monolithically fabricated on the substrate.

[78] The device according to

[76] , comprising the substrate, the organic semiconductor laser diode, the organic light-emitting diode, and the organic solar cell, wherein the organic semiconductor laser diode, the organic light-emitting diode, and the organic solar cell are monolithically fabricated on the substrate.

[79] The device according to

[76] , comprising the substrate, the organic semiconductor laser diode, the organic light-emitting diode, and the organic field-effect transistor, wherein the organic semiconductor laser diode, the organic light-emitting diode, and the organic field-effect transistor are monolithically fabricated on the substrate.

[80] The device according to

[76] , comprising the substrate, the organic semiconductor laser diode, the organic light-emitting diode, and the organic thermal power generator, wherein the organic semiconductor laser diode, the organic light-emitting diode, and the organic thermal power generator are monolithically fabricated on the substrate.

[81] The element according to any one of

[76] to

[80] , wherein the substrate is flexible.

[82] The element according to any one of

[76] to

[80] , wherein the substrate is transparent.

[83] The device according to

[82] , wherein the organic semiconductor laser diode and the organic light-emitting diode emit light from the bottom.

[84] The device according to

[83] , wherein the organic semiconductor laser diode comprises, in this order, a transparent substrate, a transparent first electrode, a distributed feedback (DFB) diffraction grating, a hole transport layer, an organic gain layer, an electron transport layer, and a second electrode.

[85] The device according to

[83] , wherein the organic semiconductor laser diode comprises, in this order, a transparent substrate, a distributed feedback (DFB) grating, a transparent first electrode, a hole transport layer, an organic gain layer, an electron transport layer, and a second electrode.

[86] The element according to any one of

[77] to

[82] , wherein the organic semiconductor laser diode emits light from the top surface.

[87] The device according to

[86] , wherein the organic semiconductor laser diode comprises, in this order, a substrate, a first electrode, a distributed feedback (DFB) grating, an electron transport layer, an organic gain layer, a hole transport layer, and a transparent second electrode.

[88] The device according to

[86] , wherein the organic semiconductor laser diode comprises, in this order, a substrate, a distributed feedback (DFB) grating, a first electrode, an electron transport layer, an organic gain layer, a hole transport layer, and a transparent second electrode.

[89] The element according to any one of

[77] to

[88] , wherein the organic semiconductor laser diode is the organic semiconductor laser diode according to any one of

[31] to

[42] and

[50] .

[0063]

[90] A method for manufacturing a device comprising a substrate, an organic semiconductor laser diode, and an organic light emitting diode, the method comprising monolithically fabricating the organic semiconductor laser diode and the organic light emitting diode on the substrate.

[91] The device manufacturing method according to

[90] , comprising monolithically fabricating the organic semiconductor laser diode, the organic light-emitting diode, and the organic photodetector on the substrate.

[92] The element manufacturing method according to

[90] or

[91] , comprising monolithically fabricating the organic semiconductor laser diode, the organic light-emitting diode, and the organic solar cell on the substrate.

[93] The element manufacturing method according to any one of

[90] to

[92] , comprising monolithically fabricating the organic semiconductor laser diode, the organic light-emitting diode, and the organic field-effect transistor on the substrate.

[94] A method for manufacturing an element according to any one of

[90] to

[93] , comprising monolithically fabricating the organic semiconductor laser diode, the organic light-emitting diode, and the organic thermal power generator on the substrate.

[95] The element manufacturing method according to any one of

[90] to

[94] , wherein the substrate is flexible.

[96] The element manufacturing method according to any one of

[90] to

[95] , wherein the substrate is transparent.

[97] The organic semiconductor laser diode is fabricated by forming an insulating grating on or above a substrate; forming a first electrode on or above the insulating grating; forming an organic layer on or above the first electrode; forming a second electrode on or above the organic layer; The element manufacturing method according to any one of

[90] to

[96] , which is carried out by

[98] The element manufacturing method according to

[97] , wherein the organic semiconductor laser diode is manufactured by the method according to any one of

[44] to

[49] .

[99] The organic semiconductor laser diode is fabricated by forming a first electrode on or above a substrate; forming an insulating grating on or above the first electrode; forming an organic layer on or above the insulating grating; forming a second electrode on or above the organic layer; The element manufacturing method according to any one of

[90] to

[96] , which is carried out by

[0100] The element manufacturing method according to any one of

[90] to

[99] , wherein the above-mentioned fabrication is carried out monolithically by a solution process.

[0101] The element manufacturing method according to any one of

[90] to

[99] , wherein the above-mentioned fabrication is carried out monolithically by an inkjet process.

[0102] The element manufacturing method according to any one of

[90] to

[99] , wherein the above-mentioned fabrication is carried out monolithically by a spin coating process.

[0103] The element manufacturing method according to any one of

[90] to

[99] , wherein the above-mentioned fabrication is carried out monolithically by a thermal evaporation process.

Claims

1. A device comprising a substrate and at least two different optoelectronic devices, said at least two different optoelectronic devices being monolithically fabricated on said substrate.

2. The device of claim 1 , wherein the at least two different optoelectronic devices are at least two optically pumped organic solid-state lasers emitting at different wavelengths.

3. The device of claim 1 , wherein the at least two different optoelectronic devices are at least two organic semiconductor laser diodes emitting at different wavelengths.

4. The device of claim 1 , wherein the at least two different optoelectronic devices are an organic solid-state laser and an organic light-emitting diode.

5. 10. The element of claim 1, wherein the at least two different optoelectronic devices include an organic solid-state laser diode, the organic solid-state laser diode including, in that order, a substrate, an insulating grating, a first electrode, an organic layer, and a second electrode.

6. The device according to any one of claims 1 to 5, wherein the at least two different optoelectronic devices comprise organic solid state laser diodes, and the device emits light from the bottom.

7. The device of any one of claims 1 to 5, wherein the at least two different optoelectronic devices comprise organic solid state laser diodes, and the device emits light from the top.

8. An organic semiconductor laser diode comprising, in order, a substrate, an insulating grating, a first electrode, an organic layer, and a second electrode.

9. 1. A method for manufacturing a device comprising a substrate and at least two different optoelectronic devices, the method comprising monolithically fabricating the at least two different optoelectronic devices on the substrate.

10. 10. The method of claim 9, wherein the element comprises a substrate and at least two different optoelectronic devices, the at least two different optoelectronic devices comprising organic solid-state laser diodes, and the method comprises forming an insulating grating on the substrate and then forming organic layers for the at least two different optoelectronic devices.

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