Semiconductor device

Abstract

To provide a semiconductor device which attains improvement in reliability of a lead member and a junction in a structure where the lead member is integrated with a case.SOLUTION: A semiconductor device 1 comprises: a substrate 40 disposed on a base 10 and including a conductor pattern 45 on a face on an opposite side of the base 10; a case 20 enclosing the substrate 40; a semiconductor element 50 disposed on the conductor pattern 45; and a belt-shaped lead member 30 which is formed integrally with the case 20 and has one end side extending from an inner wall 20a of the case 20 and joined to the conductor pattern 45. The lead member 30 includes a root part 31 which is positioned at the root of the case 20, an opposite part 33 which is a face in parallel with the substrate 40 and opposed to the conductor pattern 45, and a belt-shaped bridging part 32 which bridges the root part 31 and the opposite part 33. The bridging part 32 extends from the case 20 in such a manner that a belt surface thereof is vertical to the substrate 40, and a length of the bridging part 32 ranges from 10 mm or more to 60 mm or less.SELECTED DRAWING: Figure 2

Description

[Technical Field]

[0001] The present invention relates to a semiconductor device. [Background technology]

[0002] Power semiconductor modules are known as semiconductor devices capable of controlling large currents. Power semiconductor modules are used for power conversion and include main terminals for inputting and outputting power, control terminals for controlling switching of large currents, and auxiliary terminals for monitoring voltage, etc. For example, Cited Document 1 describes a power semiconductor module in which wiring material for the main terminals is integrally fixed to a frame-shaped member that forms part of a housing. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Laid-Open No. 2017-017109 Summary of the Invention [Problem to be solved by the invention]

[0004] Because the main terminals carry large currents, for example, thick wiring materials are used. On the other hand, thinner lead materials can be used for the control and auxiliary terminals. Furthermore, by integrating the lead materials of the control and auxiliary terminals with the case in advance, the number of assembly parts can be reduced and the process can be simplified. However, it has been found that if the lead materials exposed from the case are short, breakage or the like can occur in the lead materials and at the joints between the lead materials and the substrate, which can cause reliability problems. The present invention has been made to solve the above problems, and has as its object to provide a semiconductor device that improves the reliability of lead members and their joints in a structure in which the lead members are integrated into the case. [Means for solving the problem]

[0005] In order to solve this problem, the semiconductor device of the present invention comprises a substrate placed on a base and having a conductor pattern on a surface opposite to the base, a case surrounding the substrate, a semiconductor element placed on the conductor pattern, and a strip-shaped lead member formed integrally with the case, one end of which extends from the inner wall of the case and is joined to the conductor pattern, the lead member having a root portion located at the base of the case, a facing portion which faces the conductor pattern in a plane parallel to the substrate, and a strip-shaped bridging portion which bridges the root portion and the facing portion, the bridging portion extending from the case so that its band surface is perpendicular to the substrate, and the length of the bridging portion is 10 mm or more and 60 mm or less. [Effects of the Invention]

[0006] According to the present invention, it is possible to provide a semiconductor device in which the reliability of the lead members and their joints is improved in a structure in which the lead members are integrated into the case. [Brief explanation of the drawings]

[0007] [Figure 1] 1 is a perspective view illustrating an outline of a semiconductor device according to an embodiment; [Figure 2] FIG. 2 is a plan view of the inside of a case in the semiconductor device according to the embodiment. [Figure 3A] 10 is a perspective view illustrating an example of an outline of a lead member extending from an inner wall of a case. FIG. [Figure 3B] 10 is a perspective view illustrating an example of an outline of a lead member extending from an inner wall of a case. FIG. [Figure 3C] 10 is a perspective view illustrating an example of an outline of a lead member extending from an inner wall of a case. FIG. [Figure 4A] 10 is a plan view illustrating an example of an outline of a lead member extending from an inner wall of a case. FIG. [Figure 4B] 10 is a plan view illustrating an example of an outline of a lead member extending from an inner wall of a case. FIG. [Figure 5] 10 is a graph illustrating an example of the relationship between the total length of the arm portions in the width direction of the facing portion and stress. DETAILED DESCRIPTION OF THE INVENTION

[0008] Embodiments of the present invention will be described with reference to the drawings. Note that the present invention is not limited to these embodiments. In addition, in the drawings, some components may be omitted, and the size, shape, and positional relationship of each component may be exaggerated. Expressions such as upper surface and lower surface are examples of relative positional relationships, and do not limit the direction when used.

[0009] [Semiconductor Devices] A semiconductor device 1 according to an embodiment will be described with reference to the drawings. The semiconductor device 1 is a high-output power semiconductor module used in automobiles, railway vehicles, etc., and is, for example, an inverter device that converts DC power into AC power. 1, the semiconductor device 1 is housed in a housing that is made up of a base 10 that forms the lower part, a case 20 that forms the sidewall, and a lid 12 that forms the upper part. External connection terminals 14 are provided on the top surface of the housing.

[0010] The external connection terminals 14 include a main terminal 16 with a large metal surface and an auxiliary control terminal 18 with a smaller metal surface than the main terminal 16, each connected to an internal circuit. The main terminal 16 is a terminal related to the input and output of power, and is connected by a wiring member with a large cross-sectional area to allow a large current to flow. On the other hand, the auxiliary control terminal 18 is a control terminal for controlling the internal circuit or an auxiliary terminal for monitoring the internal circuit, and can be a wiring member with a smaller cross-sectional area than the main terminal 16. The following description will be given taking as an example a lead member 30, which is the wiring member for the auxiliary control terminal 18. 2, the semiconductor device 1 includes a substrate 40 disposed on a base 10 and having a conductor pattern 45 on the surface opposite the base 10, a case 20 surrounding the substrate 40, a semiconductor element 50 disposed on the conductor pattern 45, and a strip-shaped lead member 30 formed integrally with the case 20, one end of which extends from an inner wall 20a of the case 20 and is connected to the conductor pattern 45. Note that the lead member 30 is a wiring member for the auxiliary control terminal, and the wiring member for the main terminal is not shown. Each component of the semiconductor device 1 will be described below.

[0011] (base) The base 10 is a plate-like member that serves as a foundation for the semiconductor device 1. Here, the base 10 has a rectangular shape. The material of the base 10 can be, for example, a metal such as copper, ceramics, or a composite material thereof.

[0012] (substrate) The substrates 40 are disposed on the base 10 and are components on which the internal circuits of the semiconductor device 1 are formed. A plurality of substrates 40 can be disposed on the base 10. In this example, four substrates 40 are disposed on the central side in a plan view, and substrates 40 smaller than the central substrate 40 are disposed at positions near both ends in the longitudinal direction. The substrate 40 has a conductor pattern 45 on the surface opposite to the base 10. The conductor pattern 45 is formed in a predetermined pattern on the insulating substrate 41 so as to become part of the wiring of the internal circuit. Note that a detailed description of the shape of the conductor pattern 45 is omitted. Also, in some cases, the surface of each component facing the base 10 will be referred to as the lower surface, and the opposite surface as the upper surface.

[0013] The substrate 40 is joined to the base 10. Here, a conductor layer of uniform thickness is formed on the surface of the insulating base material 41 facing the base 10, and is joined to the base 10 via a joining member. That is, the substrate 40 is made up of the insulating base material 41, the conductor pattern 45, and the conductor layer. The insulating substrate 41 may be made of a ceramic material such as silicon nitride. The conductive pattern 45 and the conductive layer may be made of a metal such as gold, silver, or copper, and copper is used here. The bonding material may be, for example, a Pb-based solder or an Sn-based solder.

[0014] (semiconductor element) The semiconductor element 50 is a semiconductor chip on which a transistor, a diode, and the like are formed. Here, the semiconductor element 50 has an insulated gate bipolar transistor (IGBT) and a diode. The semiconductor element 50 may also have a metal oxide semiconductor field effect transistor (MOSFET). The semiconductor in the semiconductor element 50, i.e., the semiconductor that is the material of the wafer or the like on which the semiconductor element 50 is formed, may be silicon (Si) or silicon carbide (SiC). The transistor and the diode may be separate chips. The semiconductor element 50 is disposed on the conductor pattern 45. The semiconductor element 50 has electrodes on its upper and lower surfaces, and the electrode on the lower surface is joined to the conductor pattern 45 via a joining member. The electrode on the upper surface is connected to the conductor pattern 45 by a bonding wire or the like. Note that the bonding wire or the like is not shown in the figure.

[0015] (case) The case 20 is a frame-shaped member that surrounds the substrate 40 and serves as a side wall of the semiconductor device 1. The case 20 is sized to overlap the outer edge of the base 10 in a plan view, excluding the corners, and is disposed on the base 10. A lid 12 is disposed on the case 20. The case 20 can be made of a resin such as polybutylene terephthalate (PBT) or polyphenylene sulfide (PPS). The lid 12 can also be made of the same material, and the base 10 and the lid 12 can be fixed to the case 20 by, for example, an adhesive.

[0016] The case 20 is provided to surround the multiple substrates 40. The inside of the case 20 is filled with sealing resin. The sealing resin is, for example, silicone gel, and seals and protects the substrates 40, the semiconductor elements 50, the lead members 30 exposed (extending) from the inner wall 20a of the case 20, and the like. Note that the sealing resin is not shown.

[0017] (Lead material) The lead member 30 is a wiring member that electrically connects the auxiliary control terminal 18 and the conductor pattern 45 of the substrate 40. The lead member 30 is a strip-shaped member that is a long, thin, plate-like member of uniform thickness, with a width greater than a thickness, extending while changing direction. The lead member 30 has a thickness direction and a width direction that are perpendicular to the extension direction. Here, the thickness of the lead member 30 is 0.5 mm, and can be within an allowable range of, for example, ±0.1 mm. The lead member 30 is formed integrally with the case 20, and one end thereof extends from the inner wall 20a of the case 20 and is joined to the conductor pattern 45. The other end of the lead member 30 can be the auxiliary control terminal 18. One end of the lead member 30 is exposed from the case 20, and the portion of the lead member 30 up to the exposed end is embedded in the case 20. The formation of the lead member 30 as an integral part of the case 20 can be performed, for example, by insert molding, in which the lead member 30 is placed in a mold for the case 20 and an uncured resin material is injected and molded.

[0018] Here, six strip-shaped lead members 30 extend from the inner wall 20a of the case 20. These lead members 30 will be described clockwise from the top left in Fig. 2 as lead members 30A, 30B, 30C, 30D, 30E, and 30F, focusing on the position of junction with the conductor pattern 45. The position of junction of each lead member with the conductor pattern 45 is the rectangular portion at the tip end of the lead member 30 in Fig. 2. As illustrated in Figures 3A to 3C, lead member 30 has three portions. Specifically, lead member 30 has root portion 31 located at the base of the case, facing portion 33 facing the conductor pattern on a surface parallel to the substrate, and strip-shaped bridging portion 32, which is the portion between root portion 31 and facing portion 33 and bridges these portions. First, common features of each lead member will be described using lead member 30A in Figure 3A as an example. Note that Figures 3A to 3C are perspective views of the portion of lead member 30 extending from the inner wall of the case, and other components are omitted.

[0019] The base portion 31 is located at the base of the case and is the portion of the base that is exposed from the case. The lead member 30 is exposed (extends) from the case at the base portion 31 with the width direction WD perpendicular to the board. In other words, the lead member 30 extends from the case 20 (its inner wall 20a) so that the strip surface (main surface) represented by the width direction WD is perpendicular to the board. This allows the positional accuracy of the tip side of the lead member 30 extending from the case in the direction perpendicular to the board to be improved. Furthermore, by configuring the strip surface to be perpendicular to the board, the projected area onto the board is reduced, allowing the lead members to be arranged densely. The facing portion 33 is a portion that is bonded to the conductive pattern. The facing portion 33 has a surface that is parallel to the substrate, and faces the conductive pattern at this surface that is parallel to the substrate. The facing portion 33 is bent so that the tip side of the lead member 30 becomes a surface that is parallel to the substrate. This bent portion is included in the facing portion 33. The facing portion 33 is bent so as to maintain the width direction WD and is continuous with the upright portion 35.

[0020] Between the facing portion 33 and the base portion 31 is a bridging portion 32. The bridging portion 32 bridges the base portion 31 and the facing portion 33. The bridging portion 32 extends from the case so that its strip surface is perpendicular to the substrate. The bridging portion 32 has a strip shape, and has an upright portion 35 that is continuous with the facing portion 33 at one end of the strip shape and stands upright with respect to the substrate, and an arm portion 34 that connects the other end of the upright portion 35 to the base portion 31. The upright portion 35 is a portion that extends in a direction perpendicular to the substrate. The upright portion 35 is continuous with the arm portion 34 so as to maintain the thickness direction. The upright portion 35 extends perpendicular to the substrate from one end that is continuous with the facing portion 33, and changes its extension direction toward the arm portion 34 at the other end. The portion where this extension direction changes is included in the upright portion 35. The width direction WD of the upright portion 35 changes toward the arm portion 34.

[0021] The material of the lead member 30 can be a metal such as gold, silver, copper, or an alloy containing these, and copper is used here. The lead member 30 can be formed, for example, by cutting a plate-shaped member to a predetermined width and shape and then bending it.

[0022] Next, we will explain each of the lead members 30A to 30F. Note that lead member 30D has a similar shape to lead member 30A, and lead member 30E has a similar shape to lead member 30B, although the direction in which they extend from inner wall 20a of the case is different, so explanations for lead members 30D and 30E will be omitted. 3A, lead members 30A and 30B extend parallel to each other in a direction parallel to the substrate from their respective base portions 31. Lead member 30A bends at an obtuse angle at bend BA1, then changes direction toward the substrate at corner CA1, and finally bends at a right angle at bend BA2.

[0023] Meanwhile, lead member 30B bends at an obtuse angle at bend BB1, then changes direction at corner CB1 to face the substrate. Up to this point, it is parallel to lead member 30A. Then, at corner CB2, it changes direction to face the substrate, bends at right angles at two bends BB2 and BB3, then changes direction again at corner CB3 to face the substrate, and finally bends at a right angle at bend BB4. The upright portion of lead member 30B is shorter than the upright portion of lead member 30A. An insulating member 25 is disposed between the lead members 30A and 30B, extending from the base 31 to a position near the upright portion 35. The insulating member 25 insulates the lead members 30A and 30B, allowing them to be arranged close to each other and parallel to each other. The lead members 30A and 30B arranged close to each other are, for example, wiring for a gate control terminal and an emitter auxiliary terminal, and the effect of their close proximity is to reduce gate voltage noise during switching. The gate control terminal is connected to the gate of the IGBT, and the emitter auxiliary terminal is connected to the emitter by wiring separate from the wiring for the main terminal through which a large current flows. The same applies to the lead members 30D and 30E arranged close to each other.

[0024] 3B, lead member 30C extends a short distance from base portion 31, bends at a right angle at bend BC1, then changes direction to extend diagonally downward at corner CC1 and parallel to the substrate at corner CC2, then bends at a right angle at bend BC2, changes direction at corner CC3 to extend toward the substrate, and finally bends at a right angle at bend BC3. 3C, lead member 30F extends parallel to the substrate from base portion 31, bends at an obtuse angle at bend BF1, then changes direction toward the substrate at corner CF1, and finally bends at a right angle at bend BF2. Lead member 30F has the same order of bends and corners from base portion 31 toward facing portion 33 as lead member 30A, and has a similar shape to lead member 30A.

[0025] In the assembly process of the semiconductor device 1, the lead members 30 are positioned, supported, and joined so that the facing portions 33 face a predetermined position on the conductor pattern. As described above, the lead members 30 are formed integrally with the case. This allows the lead members 30 to be positioned and supported by attaching the case to the base, reducing the number of parts in the assembly process and simplifying the process. On the other hand, it has been found that if the lead member 30 exposed from the case is short, breakage or the like may occur in the lead member 30. As a result of studies by the inventors, it has been found that this breakage or the like may be caused by vibration of the exposed lead member 30. Causes of vibration include vibration when joining the lead member 30 and the conductor pattern using ultrasonic bonding (hereinafter sometimes referred to as metal bonding, MB) and vibration transmitted from the external environment. Therefore, the relationship between the stress generated by vibration in the MB method and the length of the lead member exposed from the case was studied.

[0026] The length of the lead member 30 exposed (extending) from the inner wall 20a of the case will be described. First, as illustrated in Fig. 3A, the length RL of the bridge portion 32 is the length from the base portion 31 to the facing portion 33, passing through the center of the lead member 30 in the width direction WD and following the shape of the bridge portion 32. As illustrated in FIG. 4A, the length PL of the bridge portion 32 in plan view is the length from the base portion 31 to the center of the facing portion 33 along the shape of the bridge portion 32 in plan view.

[0027] The length of the arm portion 34 can be defined as the length WLa of the facing portion 33 in the width direction WD and the length WLb in the direction perpendicular to the width direction WD. These lengths WLa and WLb are the distances between the base portion 31 and the facing portion 33 in those directions. 4B, depending on the combination of the bending angle, direction, and number of times, there may be two or more portions of the facing portion 33 having the same length in the width direction WD. In such cases, the lengths of these two or more portions are summed. In the case of the lead member 30C, the total length of the facing portion 33 in the width direction WD is the sum of the length WLa1 and the length WLa2.

[0028] As a result of investigations by the inventors, it was found that the length of the MB device in the direction perpendicular to the vibration direction VD of the tool contributes greatly to the stress. In metal bonding between the lead member and the conductive pattern, a tool, which is part of the MB device, is pressed from above against the surface of the facing portion 33 that is parallel to the substrate. Ultrasonic vibrations are then applied in the vibration direction VD, and the conductive pattern is bonded by these vibrations. In this case, the width direction WD of the facing portion 33 is perpendicular to the vibration direction VD of the tool. An example of the relationship between the total length of the arm portions 34 in the width direction WD of the facing portion 33 and stress is shown in Figure 5. Figure 5 shows the simulation results for lead members 30C and 30F. The thickness of the lead member 30 is 0.5 mm. The graph for lead member 30F is an example of the stress results when the length WLa in Figure 4A is changed. The graph for lead member 30C is an example of the stress results when the sum of the lengths WLa1 and WLa2 in Figure 4B is changed. The stress is shown as a relative value.

[0029] The graphs for lead members 30C and 30F show similar curves, with stress decreasing as the total length of arm portions 34 in width direction WD of facing portion 33 increases. Therefore, it is believed that the trend in the graph in Figure 5 is common to all lead members. Furthermore, based on empirical data, the range in which fracture or other damage is expected to be prevented is a range in which the relative value of stress is less than 1.9, preferably less than 1.5, and more preferably less than 1.0. That is, the total length of the arm portions 34 in the width direction WD of the facing portion 33 can be set to 5 mm or more, preferably 7 mm or more, and more preferably 10 mm or more. In this way, by lengthening the lead members exposed (extending) from the inner wall of the case, the semiconductor device 1 can improve the reliability of the lead members.

[0030] From the viewpoint of vibration of the lead member 30, it is believed that there is no problem even if the total length of the arm portions 34 in the width direction WD of the facing portion 33 is further increased. However, if the exposed lead member 30 is longer, the accuracy of positioning the facing portion 33 in the direction along the surface of the substrate may decrease. For this reason, the total length of the arm portions 34 in the width direction WD of the facing portion 33 can be set to 50 mm or less, preferably 45 mm or less, and more preferably 40 mm or less. This ensures that the semiconductor device 1 has a sufficient contact area between the facing portion 33 of the lead member 30 and the conductor pattern, thereby improving the reliability of the joint.

[0031] To summarize the results of the study, the total length of the arm portion 34 in the width direction WD of the facing portion 33 can be 5 mm or more and 50 mm or less, preferably 7 mm or more and 45 mm or less, and more preferably 10 mm or more and 40 mm or less. The length PL of the bridging portion 32 in plan view is increased by 2 mm from the total length of the facing portion 33 in the width direction WD, with 2 mm added to the lower limit, while the upper limit is set to the same value in consideration of the accuracy of positioning of the facing portion 33. That is, the length PL of the bridging portion 32 in plan view can be 7 mm to 50 mm, preferably 9 mm to 45 mm, and more preferably 12 mm to 40 mm. The length RL of the bridging portion 32 can be 10 mm to 60 mm, preferably 12 mm to 55 mm, and more preferably 15 mm to 50 mm, assuming that the length of the upright portion 35 is 3 mm to 10 mm.

[0032] 3C, the arm portion 34 of the lead member 30F is bent once at the bend BF1. This allows the width direction WD of the facing portion 33 to be changed, increasing the degree of freedom in adjusting the length of the arm portion 34 in the width direction WD of the facing portion 33 and the position of the facing portion 33 relative to the substrate 40. The same applies to the lead members 30A and 30D. Here, in the semiconductor device 1, the arm portion 34 of the lead member 30 is bent at least once in a plan view. 3B, arm portion 34 of lead member 30C is bent twice at bends BC1 and BC2. This allows the position and width direction WD of facing portion 33 to be further changed, and even if the position of base portion 31 in the case cannot be selected, the position and orientation of facing portion 33 relative to substrate 40 can be adjusted, making it possible to increase the total length of facing portion 33 in width direction WD. Semiconductor device 1 includes a lead member whose arm portions are bent twice in a plan view. 3A, when insulating member 25 is placed between two adjacent lead members 30, it is similar to a state in which it is embedded and fixed in case 20, and the inventors' simulation study revealed that the end on the upright portion 35 side of insulating member 25 becomes equivalent to base portion 31 when insulating member 25 is not placed, and the length equivalent to the exposed portion becomes shorter. Therefore, by placing insulating member 25, it is possible to adjust the effect of placing lead members close to each other, in addition to improving vibration resistance.

[0033] The semiconductor device 1 having the above configuration has its base exposed from the case with its width perpendicular to the substrate, i.e., the strip surface of the bridge portion extends from the case perpendicular to the substrate, thereby improving the positional accuracy of the facing portion in the direction perpendicular to the substrate. Furthermore, by lengthening the lead members extending from the inner wall of the case, stress due to vibration in the MB method can be reduced, improving reliability against breakage, etc. In particular, by making the total width of the facing portions 10 mm or more, the stress on the lead members can be further reduced, and by making it 40 mm or less, the decrease in positioning accuracy of the facing portions can be prevented, thereby further improving reliability. In this way, semiconductor device 1 can improve the reliability of a structure in which lead members are integrated into a case.

[0034] The semiconductor device 1 is also used in environments subject to vibration, such as automobiles and railway vehicles. Reducing stress by lengthening the lead members extending from the inner wall of the case is thought to be similarly effective against vibrations transmitted from the external environment. By lengthening the lead members extending from the inner wall of the case, the semiconductor device 1 can reduce stress on the lead members, including the joints with the conductor patterns, even against vibrations transmitted from the external environment, thereby improving the reliability of the lead members and their joints. Increasing not only the widthwise length of the facing portion but also the length perpendicular to the widthwise direction is effective against vibrations transmitted from the external environment. That is, increasing the length WLb in Figures 4A and 4B can also improve the reliability of the lead member and its joint. Furthermore, increasing the length of the bridge portion 32 or the length of the bridge portion 32 in a plan view can also improve reliability against vibrations transmitted from the external environment.

[0035] The lead members and the conductor patterns may be joined by a joining material. Although joining using a joining material such as solder does not apply vibrations as in the MB method, the positional accuracy of the facing portions is the same as in the MB method. Furthermore, the reliability against vibrations transmitted from the external environment is improved in the same way as in the MB method. Even when the lead members and the conductor patterns are joined by a joining material, the semiconductor device 1 can improve the reliability of the lead members and their joints. The arms of the lead members do not have to be bent. The semiconductor device may have lead members whose arms are bent three or more times. The bending angle can be set freely. Furthermore, the width direction (band surface) of the base portion of the lead member exposed from the case does not have to be perpendicular to the board, and even in this case, the effects of the present invention are maintained in all respects except for the positional accuracy in the direction perpendicular to the board. [Explanation of symbols]

[0036] 1. Semiconductor device 10 base 12 Lid 14 External connection terminal 16 Main terminal 18 Auxiliary control terminal 20 cases 20a inner wall 25 Insulating material 30 Lead material 31 Base 32 Bridge part 33 Facing section 34 Arm 35 Upright part 40 boards 41 Insulating substrate 45 Conductor Pattern 50 Semiconductor elements

Claims

1. a substrate disposed on the base and having a conductor pattern on a surface opposite to the base; a case surrounding the substrate; a semiconductor element disposed on the conductor pattern; a strip-shaped lead member formed integrally with the case, one end of which extends from the inner wall of the case and is joined to the conductor pattern; the lead member has a base portion located at the base of the case, a facing portion facing the conductor pattern on a surface parallel to the substrate, and a band-shaped bridging portion bridging the base portion and the facing portion, the bridge portion extends from the case so that its strip surface is perpendicular to the substrate; The semiconductor device, wherein the length of the bridge portion is 10 mm or more and 60 mm or less.

2. The semiconductor device according to claim 1 , wherein the bridge portion has a length of 7 mm to 50 mm in plan view.

3. the bridge portion has an upright portion that is continuous with the facing portion at one end side and stands upright with respect to the substrate, and an arm portion that connects the other end of the upright portion to the base portion, The upright portion is continuous with the arm portion so as to maintain the thickness direction, The semiconductor device according to claim 1 , wherein the facing portion is bent so as to maintain a width direction and is continuous with the upright portion.

4. The semiconductor device according to claim 3 , wherein the arm portion is bent at least once in a plan view.

5. The semiconductor device according to claim 3 , wherein the arm portion of the lead member is bent twice in a plan view.

6. 4. The semiconductor device according to claim 3, wherein the total length of the facing portion in the width direction of the arm portion is 10 mm or more and 40 mm or less.

7. 7. The semiconductor device according to claim 1, wherein the facing portion is ultrasonically bonded to the conductor pattern.

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