Control method of discharge-excitation type laser device, discharge-excitation type laser device, and manufacturing method of electronic device

Abstract

To suppress a change in pulse energy occurring in accordance with switching between target wavelengths λ1 and λ2.SOLUTION: A control method of a discharge-excitation type laser device including a power source that controls pulse energy of pulse laser light includes: during a first period, outputting pulse laser light including a plurality of pulses from the discharge-excitation type laser device while periodically changing a wavelength; calculating correction data for correcting a voltage command value to be set to the power source in accordance with a change in the wavelength by using first time-series data of pulse energies of the plurality of pulses; and during a second period, acquiring the voltage command value, correcting the acquired voltage command value using the correction data, and outputting the pulse laser light from the discharge-excitation type laser device in accordance with the corrected voltage command value.SELECTED DRAWING: Figure 9

Description

[Technical Field]

[0001] The present disclosure relates to a method for controlling a discharge-pumped laser apparatus, a discharge-pumped laser apparatus, and a method for manufacturing an electronic device. [Background technology]

[0002] In recent years, semiconductor exposure devices have been required to improve their resolution in response to the miniaturization and high integration of semiconductor integrated circuits. To this end, the wavelength of light emitted from exposure light sources has been shortened. For example, KrF excimer laser devices, which output laser light with a wavelength of approximately 248 nm, and ArF excimer laser devices, which output laser light with a wavelength of approximately 193 nm, are used as gas laser devices for exposure.

[0003] The spectral linewidth of the spontaneously oscillating light from KrF excimer laser devices and ArF excimer laser devices is as wide as 350 to 400 pm. Therefore, if a projection lens is constructed using a material that transmits ultraviolet light, such as KrF and ArF laser light, chromatic aberration may occur. As a result, resolution may decrease. Therefore, it is necessary to narrow the spectral linewidth of the laser light output from the gas laser device to a level where chromatic aberration is negligible. Therefore, a line narrowing module (LNM) containing a line narrowing element (e.g., an etalon or grating) may be installed inside the laser resonator of the gas laser device to narrow the spectral linewidth. Hereinafter, a gas laser device with a narrowed spectral linewidth is referred to as a line narrowing laser device. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] Japanese Patent Application Laid-Open No. 2003-218437 [Patent Document 2] Summary of the specification of U.S. Patent No. 9,261,794

[0005] In one aspect of the present disclosure, a control method for a discharge-excitation type laser device including a power supply that controls pulse energy of pulsed laser light includes: causing the discharge-excitation type laser device to output pulsed laser light including a plurality of pulses while periodically varying the wavelength during a first period; calculating correction data for correcting a voltage command value set in the power supply in accordance with the variation in wavelength using first time-series data of the pulse energy of the plurality of pulses; and acquiring a voltage command value during a second period, correcting the acquired voltage command value using the correction data, and causing the discharge-excitation type laser device to output pulsed laser light in accordance with the corrected voltage command value.

[0006] In one aspect of the present disclosure, a discharge-pumped laser device includes a power supply that controls pulse energy of pulsed laser light, and a processor that controls the power supply. The processor causes the discharge-pumped laser device to output pulsed laser light including a plurality of pulses while periodically varying the wavelength during a first period, calculates correction data using first time-series data on the pulse energy of the plurality of pulses to correct a voltage command value set in the power supply in accordance with the variation in wavelength, acquires a voltage command value during a second period, corrects the acquired voltage command value using the correction data, and causes the discharge-pumped laser device to output pulsed laser light in accordance with the corrected voltage command value.

[0007] A method for manufacturing an electronic device according to one aspect of the present disclosure includes generating a pulsed laser beam using a discharge-excitation laser apparatus including a power supply that controls the pulse energy of the pulsed laser beam and a processor that controls the power supply, outputting the pulsed laser beam to an exposure apparatus, and exposing a photosensitive substrate in the exposure apparatus to the pulsed laser beam to manufacture an electronic device. The processor causes the discharge-excitation laser apparatus to output a pulsed laser beam including a plurality of pulses while periodically varying the wavelength during a first period, calculates correction data using first time-series data on the pulse energy of the plurality of pulses to correct a voltage command value set in the power supply in accordance with the variation in wavelength, acquires a voltage command value during a second period, corrects the acquired voltage command value using the correction data, and causes the discharge-excitation laser apparatus to output the pulsed laser beam in accordance with the corrected voltage command value. [Brief explanation of the drawings]

[0008] Some embodiments of the present disclosure will now be described, by way of example only, with reference to the accompanying drawings, in which: [Figure 1] FIG. 1 shows a schematic configuration of an exposure system in a comparative example. [Figure 2] FIG. 2 shows a schematic configuration of a laser device in a comparative example. [Figure 3] FIG. 3 shows an example of a semiconductor wafer being exposed by an exposure system. [Figure 4] FIG. 4 shows an example of a trigger signal sent from the exposure control processor to the laser control processor. [Figure 5] FIG. 5 is a graph showing an example of periodic fluctuation of wavelength. [Figure 6] FIG. 6 is a flowchart showing a process for outputting pulsed laser light executed by a laser control processor in the comparative example. [Figure 7] FIG. 7 is a flowchart showing the laser control process executed by the exposure control processor in the comparative example. [Figure 8]FIG. 8 is a graph showing changes in pulse energy when pulsed laser light is output while switching the target wavelength. [Figure 9] FIG. 9 shows a schematic configuration of a laser device according to the first embodiment. [Figure 10] FIG. 10 is a graph showing correction data included in the voltage correction table. [Figure 11] FIG. 11 is a control block diagram of pulse energy in the first embodiment. [Figure 12] FIG. 12 is a flowchart showing a process for outputting pulsed laser light, which is executed by the laser control processor in the first embodiment. [Figure 13] FIG. 13 is a flowchart showing the process of updating the voltage correction table executed by the laser control processor in the first embodiment. [Figure 14] FIG. 14 is a flowchart showing details of the process of updating the voltage correction table in the first embodiment. [Figure 15] FIG. 15 is a graph conceptually showing the average values ​​and differences calculated in FIG. [Figure 16] FIG. 16 is a flowchart showing details of the process of updating the voltage correction table in the second embodiment. [Figure 17] FIG. 17 is a graph conceptually showing the average values ​​and differences calculated in FIG. [Figure 18] FIG. 18 is a graph conceptually showing the average values ​​and differences calculated in FIG. [Figure 19] FIG. 19 is a flowchart showing details of the process of updating the voltage correction table in the third embodiment. [Figure 20] FIG. 20 is a graph of spectrum data obtained by Fourier transforming the time series data of pulse energy in FIG. [Figure 21] FIG. 21 is a flowchart showing details of the process of updating the voltage correction table in the fourth embodiment. [Figure 22]FIG. 22 is a flowchart showing details of the process of updating the voltage correction table in the fifth embodiment. [Figure 23] FIG. 23 is a graph showing periodically changing wavelengths. [Figure 24] FIG. 24 is a flowchart showing processing for outputting pulsed laser light, which is executed by the laser control processor in the sixth embodiment. [Figure 25] FIG. 25 is a flowchart showing the laser control process executed by the exposure control processor in the sixth embodiment. [Figure 26] FIG. 26 shows a schematic configuration of a monitor module used in the comparative example and the first to sixth embodiments. Embodiment

[0009] <Contents> 1. Comparative Example 1.1 Exposure system 1.1.1 Configuration 1.1.2 Operation 1.2 Laser device 100 1.2.1 Configuration 1.2.2 Operation 1.3 Band-narrowing module14 1.3.1 Configuration 1.3.2 Operation 1.4 Step-and-scan exposure 1.5 Example of periodic wavelength change 1.6 Pulse laser light output control 1.6.1 Control by Laser Control Processor 130 1.6.2 Laser Control by Exposure Control Processor 210 1.7 Issues in the comparative example 2. Laser device that calculates correction data using time series data of pulse energy En[ ] 2.1 Configuration 2.2 Control block diagram 2.3 Pulse laser light output control 2.4 Update timing of voltage correction table 134 2.5 Update process of voltage correction table 134 2.6 Effect 3. Laser device that further calculates correction data using time series data of voltage command value HVc[ ] 3.1 Update process of the voltage correction table 134 3.2 Effect 4. Laser device that performs Fourier transform on time series data of pulse energy En[ ] to calculate correction data 4.1 Update process of the voltage correction table 134 4.2 Effect 5. Laser device that performs Fourier transform on the time series data of the voltage command value HVc[ ] to calculate correction data 5.1 Update process of the voltage correction table 134 5.2 Effect 6. Laser device that calculates correction data for each pulse number j within a wavelength fluctuation period 6.1 Update process of voltage correction table 134 6.2 Effect 7. Laser device that sets voltage command value HVc based on target pulse energy Et 7.1 Control by the laser control processor 130 7.2 Control by the exposure control processor 210 8.Other 8.1 Configuration of Monitor Module 17 8.2 Operation of Monitor Module 17 8.3 Supplementary Information

[0010] Hereinafter, embodiments of the present disclosure will be described in detail with reference to the drawings. The embodiments described below show some examples of the present disclosure and do not limit the content of the present disclosure. Furthermore, not all of the configurations and operations described in each embodiment are necessarily essential as the configurations and operations of the present disclosure. Note that the same components are given the same reference symbols, and redundant explanations will be omitted.

[0011] 1. Comparative Example 1.1 Exposure system 1 shows a schematic configuration of an exposure system in a comparative example. The comparative example in the present disclosure is a configuration that the applicant recognizes as being known only by the applicant, and is not a publicly known example that the applicant acknowledges. The exposure system includes a laser device 100 and an exposure device 200. In Fig. 1, the laser device 100 is shown in a simplified form.

[0012] The laser apparatus 100 includes a laser control processor 130. The laser control processor 130 is a processing device including a memory 132 in which a control program is stored and a CPU (central processing unit) 131 that executes the control program. The laser control processor 130 is specially configured or programmed to execute various processes included in the present disclosure. The laser control processor 130 corresponds to the processor in the present disclosure. The laser apparatus 100 is configured to output pulsed laser light toward the exposure apparatus 200.

[0013] 1.1.1 Configuration As shown in FIG. 1, the exposure apparatus 200 includes an illumination optical system 201 , a projection optical system 202 , and an exposure control processor 210 .

[0014] The illumination optical system 201 illuminates a reticle pattern of a reticle (not shown) placed on a reticle stage RT with pulsed laser light incident from the laser device 100 . The projection optical system 202 reduces and projects the pulsed laser light that has passed through the reticle, forming an image on a workpiece (not shown) placed on a workpiece table WT. The workpiece is a photosensitive substrate such as a semiconductor wafer coated with a resist film.

[0015] The exposure control processor 210 is a processing device that includes a memory 212 that stores a control program, and a CPU 211 that executes the control program. The exposure control processor 210 is specially configured or programmed to execute various processes included in the present disclosure. The exposure control processor 210 oversees the control of the exposure apparatus 200.

[0016] 1.1.2 Operation The exposure control processor 210 transmits various parameters, including the target wavelengths λ1 and λ2 and the voltage command value HVc, as well as a trigger signal, to the laser control processor 130. The laser control processor 130 controls the laser device 100 in accordance with these parameters and signals. The target wavelengths λ1 and λ2 are wavelength target values, with the target wavelength λ1 corresponding to the first target wavelength in this disclosure and the target wavelength λ2 corresponding to the second target wavelength in this disclosure. The target wavelength λ1 is set to a wavelength greater than the target wavelength λ2.

[0017] The exposure control processor 210 synchronizes the reticle stage RT and the workpiece table WT and translates them in opposite directions, thereby exposing the workpiece to a pulsed laser beam that reflects the reticle pattern. The reticle pattern is transferred onto the semiconductor wafer through this exposure process, after which electronic devices can be manufactured through multiple processes.

[0018] 1.2 Laser device 100 1.2.1 Configuration 2 is a schematic diagram showing the configuration of a laser apparatus 100 in a comparative example. In FIG. 2, some elements included in an exposure apparatus 200 are not shown.

[0019] The laser device 100 is a discharge-pumped laser device, and includes a laser control processor 130 as well as a laser chamber 10, a charger 12, a pulsed power module (PPM) 13, a line-narrowing module 14, an output coupling mirror 15, and a monitor module 17. The line-narrowing module 14 and the output coupling mirror 15 form an optical resonator.

[0020] The laser chamber 10 is disposed in the optical path of the optical resonator and is provided with windows 10a and 10b. The laser chamber 10 is equipped with a discharge electrode 11a and a paired discharge electrode (not shown) inside. The discharge electrode (not shown) is positioned so as to overlap with the discharge electrode 11a in a direction perpendicular to the plane of the paper in Fig. 2. The laser chamber 10 is filled with a laser gas containing, for example, argon gas or krypton gas as a rare gas, fluorine gas as a halogen gas, and neon gas as a buffer gas.

[0021] The charger 12 holds electrical energy to be supplied to the pulse power module 13. The pulse power module 13 includes a charging capacitor and a switch, not shown. The charger 12 is connected to the charging capacitor. The charging capacitor is connected to the discharge electrode 11a. The charger 12 and the pulse power module 13 constitute the power source in this disclosure.

[0022] The line narrowing module 14 includes prisms 41 to 43, a grating 53, and a mirror 63. The line narrowing module 14 will be described in detail later. The output coupling mirror 15 is made up of a partial reflection mirror.

[0023] A beam splitter 16 that transmits a portion of the pulsed laser beam with high transmittance and reflects the other portion is disposed in the optical path of the pulsed laser beam output from the output coupling mirror 15. A monitor module 17 is disposed in the optical path of the pulsed laser beam reflected by the beam splitter 16. The configuration of the monitor module 17 will be described in detail later with reference to FIG. 26.

[0024] 1.2.2 Operation The laser control processor 130 acquires various parameters including the target wavelengths λ1 and λ2 and the voltage command value HVc from the exposure control processor 210. The laser control processor 130 transmits a control signal to the line narrowing module 14 based on the target wavelengths λ1 and λ2. The laser control processor 130 sets the acquired voltage command value HVc in the charger 12.

[0025] The laser control processor 130 receives a trigger signal from the exposure control processor 210. The laser control processor 130 transmits an oscillation trigger signal based on the trigger signal to the pulse power module 13. A switch included in the pulse power module 13 turns on when it receives the oscillation trigger signal from the laser control processor 130. When the switch turns on, the pulse power module 13 generates a pulsed high voltage from the electrical energy stored in the charger 12 and applies this high voltage to the discharge electrode 11a.

[0026] When a high voltage is applied to the discharge electrode 11a, a discharge occurs in the discharge space between the discharge electrode 11a and another discharge electrode (not shown). The energy of this discharge excites the laser gas in the laser chamber 10 and causes it to transition to a higher energy level. When the excited laser gas subsequently transitions to a lower energy level, it emits light with a wavelength corresponding to the difference in energy levels.

[0027] Light generated within the laser chamber 10 is emitted to the outside of the laser chamber 10 through windows 10a and 10b. The light emitted from the window 10a enters the line narrowing module 14. Of the light that enters the line narrowing module 14, light having a wavelength near the desired wavelength is returned by the line narrowing module 14 to the laser chamber 10.

[0028] The output coupling mirror 15 transmits a portion of the light emitted from the window 10 b and outputs it as pulsed laser light, and reflects the other portion back into the laser chamber 10 .

[0029] In this way, the light emitted from the laser chamber 10 travels back and forth between the line-narrowing module 14 and the output-coupling mirror 15. This light is amplified each time it passes through the discharge space in the laser chamber 10. In addition, this light is narrowed in line each time it is bent back by the line-narrowing module 14, becoming light with a steep wavelength distribution with a central wavelength that is part of the range of wavelengths selected by the line-narrowing module 14. The light thus oscillates and has its line narrowed is output as pulsed laser light from the output-coupling mirror 15. Unless otherwise specified, the wavelength of the pulsed laser light refers to the central wavelength.

[0030] The monitor module 17 measures the wavelength of the pulsed laser light and transmits the measured wavelength to the laser control processor 130. The laser control processor 130 controls the line-narrowing module 14 based on the measured wavelength.

[0031] The pulsed laser beam transmitted through the beam splitter 16 enters the exposure apparatus 200. An energy monitor 220 included in the exposure apparatus 200 measures the pulse energy En of the pulsed laser beam. Based on the pulse energy En and the target pulse energy Et, an exposure control processor 210 calculates a voltage command value HVc and sends it to the laser control processor 130. The pulse energy En of the pulsed laser beam is controlled by the voltage command value HVc.

[0032] 1.3 Band-narrowing module14 1.3.1 Configuration Prisms 41, 42, and 43 are arranged in this order in the optical path of the light beam emitted from window 10a. Prisms 41 to 43 are arranged so that the surfaces of prisms 41 to 43 through which the light beam enters and exits are all parallel to the V axis, and each is supported by a holder (not shown). Prism 43 can be rotated around an axis parallel to the V axis by a rotation stage 143. An example of rotation stage 143 is a rotation stage equipped with a stepping motor and having a large range of motion.

[0033] Mirror 63 is disposed in the optical path of the light beam transmitted through prisms 41 to 43. Mirror 63 is disposed so that the surface that reflects the light beam is parallel to the V axis, and can be rotated around an axis parallel to the V axis by rotation stage 163. An example of rotation stage 163 is a highly responsive rotation stage equipped with a piezoelectric element.

[0034] Alternatively, prism 42 may be rotatable by rotation stage 143, prism 43 may be rotatable by rotation stage 163, and mirror 63 may not be rotatable.

[0035] The grating 53 is disposed in the optical path of the light beam reflected by the mirror 63. The direction of the grooves of the grating 53 is parallel to the V axis. The grating 53 is supported by a holder (not shown).

[0036] 1.3.2 Operation The light beam emitted from the window 10a has its traveling direction changed by each of the prisms 41 to 43 in a plane parallel to the HZ plane, which is a plane perpendicular to the V axis, and its beam width is expanded in the plane parallel to the HZ plane. The light beams transmitted through the prisms 41 to 43 are reflected by the mirror 63 and enter the grating 53 .

[0037] The light beam incident on the grating 53 is reflected by the multiple grooves of the grating 53 and diffracted in a direction according to the wavelength of the light. The grating 53 is in a Littrow configuration so that the angle of incidence of the light beam incident on the grating 53 from the mirror 63 matches the diffraction angle of the diffracted light of the desired wavelength.

[0038] The mirror 63 reflects the light returned from the grating 53 toward the prism 43. The prisms 41 to 43 reduce the beam width of the light reflected by the mirror 63 in a plane parallel to the HZ plane, and return the light to the inside of the laser chamber 10 through the window 10a.

[0039] The laser control processor 130 controls the rotation stages 143 and 163 via drivers (not shown). The angle of incidence of the light beam incident on the grating 53 changes depending on the rotation angle of the rotation stages 143 and 163, and the wavelength selected by the line-narrowing module 14 changes. The rotation stage 143 is mainly used for coarse adjustment, and the rotation stage 163 is mainly used for fine adjustment.

[0040] The laser control processor 130 controls the rotation stage 163 so that the attitude of the mirror 63 changes periodically for each set of pulses based on the target wavelengths λ1 and λ2 received from the exposure control processor 210. This causes the wavelength of the pulsed laser light to change periodically for each set of pulses. In this way, the laser device 100 can perform two-wavelength oscillation or multi-wavelength oscillation.

[0041] The focal length in the exposure apparatus 200 depends on the wavelength of the pulsed laser beam. The pulsed laser beam that has been oscillated with two or more wavelengths and entered the exposure apparatus 200 can form images at multiple different positions in the direction of the optical path axis of the pulsed laser beam, thereby effectively increasing the depth of focus. For example, even when exposing a thick resist film, the imaging performance in the thickness direction of the resist film can be maintained.

[0042] 1.4 Step-and-scan exposure Figure 3 shows an example of a semiconductor wafer WF#1 exposed by an exposure system. The semiconductor wafer WF#1 is, for example, a substantially circular disk-shaped plate made of single-crystal silicon. The semiconductor wafer WF#1 is coated with, for example, a photosensitive resist film. The semiconductor wafer WF#1 is exposed in sections, such as scan fields SF#1 and SF#2. Each of scan fields SF#1 and SF#2 corresponds to the area where the reticle pattern of a single reticle is transferred. The semiconductor wafer WF#1 is moved so that the pulsed laser light is irradiated onto the first scan field SF#1, and scan field SF#1 is exposed. The semiconductor wafer WF#1 is then moved so that the pulsed laser light is irradiated onto the second scan field SF#2, and scan field SF#2 is exposed. The semiconductor wafer WF#1 is then moved in the same manner, and exposure is continued up to the final scan field SF#max.

[0043] 4 shows an example of a trigger signal sent from the exposure control processor 210 to the laser control processor 130. When exposing one scan field SF#1 or SF#2, pulsed laser light is output continuously at a predetermined repetition frequency. The continuous output of pulsed laser light at a predetermined repetition frequency is called burst output. When moving from one scan field SF#1 to another scan field SF#2, the burst output of pulsed laser light is paused. Therefore, to expose one semiconductor wafer WF#1, burst output is repeated multiple times.

[0044] When exposure of the first semiconductor wafer WF#1 is completed, the output of the pulsed laser light to the exposure apparatus 200 is stopped so that the semiconductor wafer WF#1 on the workpiece table WT can be replaced with the second semiconductor wafer WF#2. However, with an optical shutter (not shown) closed, adjusted light emission may be performed for the purpose of adjusting parameters, etc.

[0045] 1.5 Example of periodic wavelength change 5 is a graph showing an example of periodic fluctuations in wavelength, where the horizontal axis represents time and the vertical axis represents wavelength. The number of pulses in one burst output for exposing one scan field SF#1 or SF#2 is Nmax. If the repetition frequency of the pulsed laser light is F, the time required for one burst output is Nmax / F.

[0046] 5, the wavelength periodically varies between target wavelengths λ1 and λ2 every four pulses. The wavelengths of the first and fourth pulse laser beams are set to the target wavelength λ1, and the wavelength of the second and third pulse laser beams are set to the target wavelength λ2. Thereafter, similarly, two pulses are generated at the target wavelength λ1, and two pulses are generated at the target wavelength λ2, and this is repeated. In this manner, the laser device 100 outputs pulse laser beams containing multiple pulses while periodically varying the wavelength.

[0047] 1.6 Pulse laser light output control 1.6.1 Control by Laser Control Processor 130 6 is a flowchart showing a process for outputting a pulsed laser beam in a comparative example, which is executed by the laser control processor 130. In the comparative example, a pulsed laser beam is output using the voltage command value HVc received from the exposure control processor 210 as is, as will be described below.

[0048] In S11, the laser control processor 130 receives the voltage command value HVc from the exposure control processor 210 of the exposure apparatus 200, thereby obtaining the voltage command value HVc.

[0049] In S17, the laser control processor 130 sets the voltage command value HVc in the charger 12.

[0050] In S18, the laser control processor 130 determines whether or not a trigger signal has been received from the exposure control processor 210. If a trigger signal has not been received (S18: NO), the laser control processor 130 waits until a trigger signal is received. If a trigger signal has been received (S18: YES), the laser control processor 130 proceeds to S19.

[0051] In S19, the laser control processor 130 transmits an oscillation trigger signal based on the trigger signal to the pulse power module 13, thereby causing the laser device 100 to output a pulsed laser beam. After S19, the laser control processor 130 returns the process to S11, and repeats the processes from S11 to S19, thereby repeatedly outputting the pulsed laser light.

[0052] 1.6.2 Laser Control by Exposure Control Processor 210 7 is a flowchart showing the laser control process executed in the comparative example by the exposure control processor 210. The exposure control processor 210 determines the voltage command value HVc so that the pulse energy En of the pulsed laser beam approaches the target pulse energy Et as follows:

[0053] In S90, the exposure control processor 210 transmits a voltage command value HVc to the laser control processor 130 of the laser device 100. If this is the first time that the voltage command value HVc is transmitted, the exposure control processor 210 transmits the voltage command value HVc calculated based on the target pulse energy Et. If this is the second or subsequent time that the voltage command value HVc is transmitted, the exposure control processor 210 transmits the voltage command value HVc updated in S95.

[0054] In S91, the exposure control processor 210 sends a trigger signal to the laser control processor 130. This causes the laser device 100 to output a pulsed laser beam. In S92 , the exposure control processor 210 detects the pulse energy En of the pulsed laser light output from the laser device 100 using the energy monitor 220 .

[0055] In S93, the exposure control processor 210 calculates the difference ΔEn between the detected pulse energy En and the target pulse energy Et using the following formula. ΔEn = En - Et A fixed value is set as the target pulse energy Et for one burst output.

[0056] In S94, the exposure control processor 210 converts the difference ΔEn into a voltage correction amount ΔHV using the following formula: ΔHV=ΔEn / HVepgain Here, HVepgain indicates the ratio of the change in pulse energy En to the change in voltage command value HVc.

[0057] In S95, the exposure control processor 210 updates the voltage command value HVc according to the following formula. HVc=HVc-ΔHV For example, if the pulse energy En detected in S92 is smaller than the target pulse energy Et, the difference ΔEn and the correction amount ΔHV become negative numbers in S93 and S94. In this case, the correction amount ΔHV, which is a negative number, is subtracted from the voltage command value HVc in S95, and the pulse energy En of the next pulse becomes larger.

[0058] After S95, the exposure control processor 210 returns to S90 and repeats the processes from S90 to S95 to calculate the voltage command value HVc and cause the laser device 100 to output a pulsed laser beam.

[0059] 1.7 Issues in the comparative example Fig. 8 is a graph showing changes in pulse energy En when pulse laser light is output while switching between target wavelengths λ1 and λ2. The horizontal axis of Fig. 8 represents the pulse number i in the burst output, and the vertical axis represents the pulse energy En. The voltage command value HVc is set to a constant value. Even if the voltage command value HVc is a constant value, the pulse energy En may change. By controlling the voltage command value HVc based on the target pulse energy Et described with reference to Fig. 7, changes in pulse energy En can be suppressed to some extent.

[0060] However, when the target wavelengths λ1 and λ2 are switched at high speed as described with reference to Fig. 5, the pulse energy En may fluctuate in response to the switching of the target wavelengths λ1 and λ2, as shown in Fig. 8. One possible cause of the fluctuation in pulse energy En in response to the switching of the target wavelengths λ1 and λ2 is vibration of optical components due to the high-speed driving of the mirror 63. If the pulse energy En fluctuates frequently, the pulse energy En may not be sufficiently stabilized by the control described with reference to Fig. 7.

[0061] Furthermore, the fluctuation of the pulse energy En contains many frequency components corresponding to the reciprocal of the wavelength fluctuation period. The reciprocal of the wavelength fluctuation period corresponds to the frequency at which the target wavelengths λ1 and λ2 are switched. Therefore, the integral value of the pulse energy En of the pulse laser beam generated at the target wavelength λ1 may not match the integral value of the pulse energy En of the pulse laser beam generated at the target wavelength λ2. In this case, the exposure performance may become non-uniform across the thickness of the resist film.

[0062] 2. Laser device that calculates correction data using time series data of pulse energy En[ ] 2.1 Configuration 9 shows a schematic configuration of a laser device 100a according to the first embodiment. In the first embodiment, a laser control processor 130 includes an energy analysis unit 133 and a voltage correction table 134.

[0063] The energy analysis unit 133 calculates correction data by statistically processing the data of the pulse energy En received from the monitor module 17. The energy analysis unit 133 may include a control program for performing such statistical processing and calculating the correction data. Alternatively, the energy analysis unit 133 may include hardware for performing such statistical processing and calculating the correction data.

[0064] The voltage correction table 134 stores correction data for correcting the voltage command value HVc in accordance with fluctuations in the wavelength of the pulsed laser beam. The voltage correction table 134 corresponds to the table in the present disclosure.

[0065] FIG. 10 is a graph showing the correction data included in the voltage correction table 134. The horizontal axis of FIG. 10 represents the pulse number i in the burst output, and the vertical axis represents the correction value HVtbl included in the correction data. The correction value HVtbl changes in response to switching between the target wavelengths λ1 and λ2. The voltage correction table 134 may be a table that stores the correction value HVtbl for each pulse number i, or may be in the form of a function, a matrix, or some other format. In other respects, the configuration of the first embodiment is the same as the configuration of the comparative example.

[0066] 2.2 Control block diagram FIG. 11 is a control block diagram of the pulse energy En in the first embodiment. The energy control block 210a corresponds to the process in S93 of FIG. 7 in which the exposure control processor 210 calculates the difference ΔEn.

[0067] The voltage conversion block 210b corresponds to the process in which the exposure control processor 210 calculates the correction amount ΔHV in S94 of Fig. 7. The voltage command value HVc is corrected using this correction amount ΔHV.

[0068] The voltage correction block 130a corresponds to the process in which the laser control processor 130 calculates the voltage setting value HVact by correcting the voltage command value HVc received from the exposure control processor 210. This process will be described later with reference to FIG.

[0069] The pulsed laser beam output block 100b corresponds to the process in which the laser device 100a applies a high voltage to the discharge electrode 11a in accordance with the voltage setting value HVact and outputs a pulsed laser beam. The pulse energy En of the pulsed laser beam is fed back to the above-mentioned process by the exposure control processor 210.

[0070] 2.3 Pulse laser light output control 12 is a flowchart showing the processing for outputting pulsed laser light executed by the laser control processor 130 in the first embodiment. In the first embodiment, the voltage command value HVc received from the exposure control processor 210 is corrected to calculate the voltage set value HVact as follows.

[0071] The process of S11 is the same as that described with reference to FIG. In S16a, the laser control processor 130 determines the correction value HVtbl(i) to be read from the voltage correction table 134. (i) means that it corresponds to the i-th pulse in the burst output. For example, when correcting the voltage command value HVc of the first pulse in the burst output, the correction value is HVtbl(1). The laser control processor 130 corrects the voltage command value HVc using the read correction value HVtbl(i) according to the following equation, and calculates the voltage set value HVact. HVact = HVc + HVtbl(i) The voltage setting value HVact corresponds to the corrected voltage command value in this disclosure.

[0072] In S17a, the laser control processor 130 sets the voltage setpoint HVact in the charger 12. The processes in S18 and S19 are the same as those described with reference to FIG.

[0073] As described above, by reading out the correction value HVtbl(i) from the voltage correction table 134 and correcting the voltage command value HVc, the voltage command value HVc can be corrected quickly for each pulse, and the pulse energy En can be stabilized. In the first embodiment, the laser control by the exposure control processor 210 is similar to that described with reference to FIG.

[0074] 2.4 Update timing of voltage correction table 134 FIG. 13 is a flowchart showing the process of updating the voltage correction table 134 executed by the laser control processor 130 in the first embodiment.

[0075] In S20, the laser control processor 130 determines whether the burst output is paused. For example, if the pulse laser light has not been output for one second or more, it determines that the burst output is paused. If the burst output is paused (S20: YES), the laser control processor 130 proceeds to S30.

[0076] In S30, the laser control processor 130 updates the correction data contained in the voltage correction table 134. The processing of S30 is performed by the energy analysis unit 133. Details of S30 will be described later with reference to FIG.

[0077] If the burst output is not paused (S20: NO), or after S30, the laser control processor 130 returns the process to S20. Through this process, laser control processor 130 updates the correction data during a pause period after the end of a first burst output and before the start of a second burst output following the first burst output. The period during which the first burst output is performed is an example of a first period in the present disclosure, and the period during which the second burst output is performed is an example of a second period in the present disclosure.

[0078] 2.5 Update process of voltage correction table 134 Fig. 14 is a flowchart showing details of the process of updating the voltage correction table 134 in the first embodiment. The process shown in Fig. 14 corresponds to the subroutine S30 in Fig. 13. Fig. 15 is a graph conceptually showing the average values ​​Enavg, Enλ1avg, and Enλ2avg and the differences ΔEnλ1 and ΔEnλ2 calculated in Fig. 14. The horizontal axis of Fig. 15 represents the pulse number i in the burst output, and the vertical axis represents the pulse energy En.

[0079] In S31a of FIG. 14, the laser control processor 130 acquires time-series data of multiple pulse energies En[ ] in burst outputs. [ ] indicates an array, and a blank in [ ] indicates the entire array corresponding to one burst output. The time-series data of pulse energies En[ ] corresponds to the first time-series data in this disclosure. As shown in FIG. 15, pulse energy En may vary depending on target wavelengths λ1 and λ2.

[0080] The laser control processor 130 calculates the average value Enavg of the pulse energy En[ ]. The average value Enavg corresponds to the third average value in this disclosure, and serves as a reference for calculating correction data.

[0081] In S32a, the laser control processor 130 calculates an average value Enλ1avg of pulse energy En[λ1] at the target wavelength λ1 and an average value Enλ2avg of pulse energy En[λ2] at the target wavelength λ2. Pulse energy En[λ1] refers to the arrangement of pulse energy En of first-wavelength pulses P[λ1] output according to the target wavelength λ1 among the pulse energies En[ ]. Similarly, pulse energy En[λ2] refers to the arrangement of pulse energy En of second-wavelength pulses P[λ2] output according to the target wavelength λ2. The average value Enλ1avg corresponds to the first average value in this disclosure, and the average value Enλ2avg corresponds to the second average value in this disclosure.

[0082] In S33a, the laser control processor 130 calculates the difference ΔEnλ1 between the average value Enλ1avg and the average value Enavg, and the difference ΔEnλ2 between the average value Enλ2avg and the average value Enavg, using the following equations. ΔEnλ1=Enλ1avg-Enavg ΔEnλ2=Enλ2avg-Enavg

[0083] In S34a, the laser control processor 130 converts the differences ΔEnλ1 and ΔEnλ2 into voltage correction amounts ΔHVλ1 and ΔHVλ2, respectively, using the following equations. ΔHVλ1=ΔEnλ1 / HVepgain ΔHVλ2=ΔEnλ2 / HVepgain

[0084] In S38a, the laser control processor 130 calculates the correction values ​​HVtbl[λ1] and HVtbl[λ2] using the following formulas, and updates the correction data included in the voltage correction table 134. HVtbl[λ1]=HVtbl[λ1]-ΔHVλ1 HVtbl[λ2]=HVtbl[λ2]-ΔHVλ2 In this way, the correction values ​​HVtbl[λ1] and HVtbl[λ2] are calculated for each target wavelength. Here, the initial values ​​of HVtbl[λ1] and HVtbl[λ2] may be set in advance by the adjusted light emission (see FIG. 4).

[0085] To prevent overcorrection, the correction amounts ΔHVλ1 and ΔHVλ2 may be multiplied by a coefficient greater than 0 and less than 1, and the obtained values ​​may be used to calculate the correction values ​​HVtbl[λ1] and HVtbl[λ2], respectively.

[0086] The calculated correction values ​​HVtbl[λ1] are all an array of the same values.Similarly, the correction values ​​HVtbl[λ2] are all an array of the same values. However, the present disclosure is not limited to this, and the correction values ​​HVtbl[λ1] and HVtbl[λ2] may each be changed during one burst output. For example, the correction values ​​HVtbl[λ1] and HVtbl[λ2] may be calculated using values ​​obtained by multiplying the correction amounts ΔHVλ1 and ΔHVλ2 by a function of time.

[0087] According to the process shown in Fig. 14, correction data including correction values ​​HVtbl[λ1] and HVtbl[λ2] is calculated using time-series data of pulse energy En[ ] in the first burst output. The correction data is stored in the voltage correction table 134. In the second burst output following the first burst output, the voltage command value HVc is corrected using the correction data read from the voltage correction table 134 by the process of S16a in Fig. 12. The overall average of the correction values ​​HVtbl[λ1] and HVtbl[λ2] may be set to 0 so that the integral value of pulse energy En[ ] does not change even when the voltage command value HVc is corrected (see Fig. 10).

[0088] 2.6 Effect (1) According to the first embodiment, correction data for the voltage command value HVc is calculated using time-series data of the pulse energy En[ ] of a plurality of pulses output while periodically varying the wavelength. This makes it possible to correct the voltage command value HVc so as to suppress fluctuations in the pulse energy En that accompany fluctuations in the wavelength.

[0089] (2) According to the first embodiment, the correction data is calculated after the period during which the first burst output is performed ends and before the period during which the second burst output following the first burst output begins. This allows the voltage command value HVc to be corrected using the latest data for each burst output.

[0090] (3) According to the first embodiment, the correction data is stored in the voltage correction table 134, and the correction data read from the voltage correction table 134 is used to correct the voltage command value HVc. By using the voltage correction table 134, the voltage command value HVc can be corrected at high speed.

[0091] (4) According to the first embodiment, the correction data is calculated based on the average value Enavg of the pulse energy En[ ]. According to this, even if the target pulse energy Et set in the exposure apparatus 200 is unknown, the voltage command value HVc can be appropriately corrected based on the average value Enavg.

[0092] (5) According to the first embodiment, the average value Enλ1avg of pulse energy En[λ1] at the target wavelength λ1, the average value Enλ2avg of pulse energy En[λ2] at the target wavelength λ2, and the average value Enavg of pulse energy En[ ] are calculated. Correction data is calculated using the difference ΔEnλ1 between the average value Enλ1avg and the average value Enavg, and the difference ΔEnλ2 between the average value Enλ2avg and the average value Enavg. This allows the integral value of the pulse energy En[λ1] at the target wavelength λ1 and the integral value of the pulse energy En[λ2] at the target wavelength λ2 to approach each other, thereby making it possible to make the exposure performance uniform in the thickness direction of the resist film.

[0093] (6) According to the first embodiment, the correction values ​​HVtbl[λ1] and HVtbl[λ2] are calculated for each target wavelength set during the period in which the first burst output is performed. This allows the correction data including the correction values ​​HVtbl[λ1] and HVtbl[λ2] to be calculated at high speed. In other respects, the first embodiment is similar to the comparative example.

[0094] 3. Laser device that further calculates correction data using time series data of voltage command value HVc[ ] 3.1 Update process of the voltage correction table 134 Fig. 16 is a flowchart showing details of the process of updating the voltage correction table 134 in the second embodiment. The process shown in Fig. 16 corresponds to the subroutine of S30 in Fig. 13. Fig. 17 is a graph conceptually showing the average values ​​HVcavg, HVcλ1avg, and HVcλ2avg calculated in Fig. 16 and the differences ΔHVcλ1 and ΔHVcλ2. The horizontal axis of Fig. 17 indicates the pulse number i in the burst output, and the vertical axis indicates the voltage command value HVc. Fig. 18 is a graph conceptually showing the average values ​​Enavg, Enλ1avg, and Enλ2avg calculated in Fig. 16 and the differences ΔEnλ1 and ΔEnλ2. The horizontal axis of Fig. 18 indicates the pulse number i in the burst output, and the vertical axis indicates the pulse energy En.

[0095] The processing from S31a to S34a in Fig. 16 is the same as that described with reference to Fig. 14. When the voltage command value HVc is controlled so that the pulse energy En approaches the target pulse energy Et as described with reference to Fig. 7, the fluctuations in the voltage command value HVc may include a frequency component corresponding to the reciprocal of the wavelength fluctuation period, as shown in Fig. 17. Such fluctuations in the voltage command value HVc suppress the fluctuations in the pulse energy En to a certain extent. However, simply canceling the fluctuations in the measured pulse energy En by the processing from S31a to S34a may not be enough to cancel the fluctuations in the pulse energy En. To further stabilize the pulse energy En, it is desirable to also correct the fluctuations in the voltage command value HVc.

[0096] In S35b, the laser control processor 130 acquires time-series data of a plurality of voltage command values ​​HVc[ ] in the burst output. The time-series data of the voltage command values ​​HVc[ ] corresponds to the second time-series data in this disclosure.

[0097] The laser control processor 130 calculates an average value HVcavg of the voltage command value HVc[ ]. The average value HVcavg corresponds to the sixth average value in this disclosure, and serves as a reference for calculating correction data.

[0098] In S36b, the laser control processor 130 calculates an average value HVcλ1avg of the voltage command value HVc[λ1] at the target wavelength λ1 and an average value HVcλ2avg of the voltage command value HVc[λ2] at the target wavelength λ2. The voltage command value HVc[λ1] refers to the arrangement of the voltage command values ​​HVc when the first wavelength pulse P[λ1] is output in accordance with the target wavelength λ1 among the voltage command values ​​HVc[ ]. Similarly, the voltage command value HVc[λ2] refers to the arrangement of the voltage command values ​​HVc when the second wavelength pulse P[λ2] is output in accordance with the target wavelength λ2. The average value HVcλ1avg corresponds to the fourth average value in this disclosure, and the average value HVcλ2avg corresponds to the fifth average value in this disclosure.

[0099] In S37b, the laser control processor 130 calculates the difference ΔHVcλ1 between the average value HVcλ1avg and the average value HVcavg, and the difference ΔHVcλ2 between the average value HVcλ2avg and the average value HVcavg, using the following equations. ΔHVcλ1=HVcλ1avg-HVcavg ΔHVcλ2=HVcλ2avg-HVcavg

[0100] In S38b, the laser control processor 130 calculates the correction values ​​HVtbl[λ1] and HVtbl[λ2] using the following formulas, and updates the correction data included in the voltage correction table 134. HVtbl[λ1]=HVtbl[λ1]-(ΔHVλ1-ΔHVcλ1) HVtbl[λ2]=HVtbl[λ2]-(ΔHVλ2-ΔHVcλ2)

[0101] In FIG. 17, when the voltage command value HVc is varied, compared to when the voltage command value HVc is kept constant at the average value HVcavg, if the target wavelength λ1 is set, the voltage command value HVc becomes lower by ΔHVcλ1, and if the target wavelength λ2 is set, the voltage command value HVc becomes higher by ΔHVcλ2. 18, when the voltage command value HVc is varied, the pulse energy En becomes smaller by ΔHVcλ1×HVepgain when the target wavelength λ1 is set, compared to when the voltage command value HVc is constant. Therefore, not only is correction based on the difference ΔEnλ1 performed by the processes from S31a to S34a, but correction is also performed using the time-series data of the voltage command value HVc[ ] by the processes from S35b to S38b, whereby the pulse energy En can be further stabilized. Similarly, when the voltage command value HVc is varied, the pulse energy En increases by ΔHVcλ2×HVepgain when the target wavelength λ2 is set, compared to when the voltage command value HVc is constant. Therefore, the pulse energy En can be further stabilized by not only performing correction based on the difference ΔEnλ2 but also performing correction using the time-series data of the voltage command value HVc[ ].

[0102] To prevent overcorrection, the correction value HVtbl[λ1] may be calculated using a value obtained by multiplying the correction amounts ΔHVλ1 and ΔHVcλ1 by a coefficient greater than 0 and less than 1. Also, the correction value HVtbl[λ2] may be calculated using a value obtained by multiplying the correction amounts ΔHVλ2 and ΔHVcλ2 by a coefficient greater than 0 and less than 1.

[0103] 3.2 Effect (7) According to the second embodiment, the correction data is calculated using time-series data of a plurality of voltage command values ​​HVc[ ] set during the period in which the first burst output is performed. This allows the fluctuation of the voltage command value HVc set by the exposure apparatus 200 to be corrected as well, making it possible to perform the correction more appropriately.

[0104] (8) According to the second embodiment, the correction data is calculated based on the average value HVcavg of the voltage command value HVc[ ]. According to this, even if the target pulse energy Et set in the exposure apparatus 200 is unknown, it can be appropriately corrected using the average value HVcavg as a reference.

[0105] (9) According to the second embodiment, an average value HVcλ1avg of the voltage command value HVc[λ1] when the target wavelength λ1 is set, an average value HVcλ2avg of the voltage command value HVc[λ2] when the target wavelength λ2 is set, and an average value HVcavg of the voltage command value HVc[ ] are calculated. Correction data is calculated using a difference ΔHVcλ1 between the average value HVcλ1avg and the average value HVcavg, and a difference ΔHVcλ2 between the average value HVcλ2avg and the average value HVcavg. This allows the fluctuation of the voltage command value HVc set by the exposure apparatus 200 to be corrected, so that the integral value of the pulse energy En[λ1] at the target wavelength λ1 and the integral value of the pulse energy En[λ2] at the target wavelength λ2 can be made closer to each other. In other respects, the second embodiment is similar to the first embodiment.

[0106] 4. Laser device that performs Fourier transform on time series data of pulse energy En[ ] to calculate correction data 4.1 Update process of the voltage correction table 134 Fig. 19 is a flowchart showing details of the process of updating the voltage correction table 134 in the third embodiment. The process shown in Fig. 19 corresponds to the subroutine S30 in Fig. 13. Fig. 20 is a graph of spectrum data FFTen[ ] obtained by Fourier transforming the time series data of pulse energy En[ ] in Fig. 19. The horizontal axis of Fig. 20 represents frequency, and the vertical axis represents spectral density.

[0107] In S31c of FIG. 19, the laser control processor 130 acquires time-series data of the pulse energy En[ ] of multiple pulses in the burst output.

[0108] The laser control processor 130 performs a Fourier transform on the time-series data of the pulse energy En[ ] to calculate the spectrum data FFTen[ ]. The Fourier transform can be performed using a fast Fourier transform. As shown in FIG. 20, the spectrum data FFTen[ ] obtained by performing a Fourier transform on the time-series data of the pulse energy En[ ] of the pulsed laser light output by periodically varying the wavelength has a peak at a specific frequency. This frequency corresponds to the reciprocal of the wavelength variation period.

[0109] In S32c, the laser control processor 130 extracts a selected frequency component FFTen[freq] from the spectral data FFTen[]. Here, the frequency component FFTen[freq] corresponding to the reciprocal of the wavelength fluctuation period is selected. In the example shown in FIG. 20, a frequency component of 1000 Hz is selected. Alternatively, a frequency band including a peak in the spectral data FFTen[] and its surrounding frequencies may be selected. Alternatively, if the spectral data FFTen[] includes multiple peaks, multiple frequency components corresponding to those peaks may be selected.

[0110] In S33c, the laser control processor 130 calculates energy data Enfft[ ] for the selected frequency by performing an inverse Fourier transform on the frequency component FFTen[freq]. The energy data Enfft[ ] includes the energy amplitude for each pulse. The inverse Fourier transform can be performed using a fast inverse Fourier transform.

[0111] In S34c, the laser control processor 130 converts the energy data Enfft[ ] into a voltage correction amount HVfft[ ] using the following formula: HVfft[ ]=Enfft[ ] / HVepgain

[0112] In S38c, the laser control processor 130 calculates the correction value HVtbl[ ] using the following formula, and updates the correction data included in the voltage correction table 134. HVtbl[ ]=HVtbl[ ]-HVfft[ ] In this way, the correction value HVtbl[ ] is calculated for each pulse in the burst output. Here, the initial value of the correction value HVtbl[ ] may be set in advance by the adjusted light emission (see FIG. 4).

[0113] To prevent overcorrection, the correction value HVtbl[ ] may be calculated using a value obtained by multiplying the correction amount HVfft[ ] by a coefficient greater than 0 and less than 1.

[0114] 4.2 Effect (10) According to the third embodiment, selected frequency components are extracted from the time series data of the pulse energy En[ ] of the multiple pulses output during the period in which the first burst output is performed, and correction data is calculated. This reduces fluctuations in the selected frequency component of the pulse energy En, making it possible to stabilize the pulse energy En.

[0115] (11) According to the third embodiment, the selected frequency component is a frequency component corresponding to the reciprocal of the wavelength fluctuation period when the pulsed laser light is output during the period in which the first burst output is performed. This reduces fluctuations in the frequency component corresponding to the frequency at which the target wavelengths λ1 and λ2 are switched, and stabilizes the pulse energy En.

[0116] (12) According to the third embodiment, the time series data of the pulse energy En[ ] is Fourier transformed to calculate the spectrum data FFTen[ ]. The frequency component FFTen[freq] selected from the spectrum data FFTen[ ] is inverse Fourier transformed to calculate the energy data Enfft[ ]. The correction data is calculated using this energy data Enfft[ ]. According to this, correction data corresponding to the phase shift between the switching of the target wavelengths λ1 and λ2 and the fluctuation of the pulse energy En is calculated, so that the pulse energy En can be further stabilized.

[0117] (13) According to the third embodiment, the correction value HVtbl[ ] is calculated for each pulse output during the period in which the first burst output is performed. This makes it possible to calculate an appropriate correction value HVtbl[ ] for each pulse. In other respects, the third embodiment is similar to the first embodiment.

[0118] 5. Laser device that performs Fourier transform on the time series data of the voltage command value HVc[ ] to calculate correction data 5.1 Update process of the voltage correction table 134 21 is a flowchart showing details of the process of updating the voltage correction table 134 in the fourth embodiment. The process shown in FIG. 21 corresponds to the subroutine of S30 in FIG.

[0119] The processes from S31c to S34c in Fig. 21 are the same as those described with reference to Fig. 19. When the voltage command value HVc is controlled so that the pulse energy En approaches the target pulse energy Et as described with reference to Fig. 7, the fluctuations in the voltage command value HVc may include a frequency component corresponding to the reciprocal of the wavelength fluctuation period, as shown in Fig. 17. As described in the second embodiment, in order to further stabilize the pulse energy En, it is desirable to also correct the fluctuations in the voltage command value HVc.

[0120] In S35d, the laser control processor 130 acquires time-series data of a plurality of voltage command values ​​HVc[ ] in the burst output.

[0121] The laser control processor 130 performs a Fourier transform on the time-series data of the voltage command value HVc[ ] to calculate the spectrum data FFThvc[ ]. The Fourier transform process can be performed by fast Fourier transform.

[0122] In S36d, the laser control processor 130 extracts the selected frequency component FFThvc[freq] from the spectrum data FFThvc[ ]. The frequency of the frequency component FFThvc[freq] may be the same as the frequency of the frequency component FFTen[freq] selected in S32c.

[0123] In step S37d, the laser control processor 130 calculates voltage data HVcfft[ ] for the selected frequency by performing an inverse Fourier transform on the frequency component FFThvc[freq]. The voltage data HVcfft[ ] includes the voltage amplitude for each pulse. The inverse Fourier transform can be performed using a fast inverse Fourier transform.

[0124] In S38d, the laser control processor 130 calculates the correction value HVtbl[ ] using the following formula, and updates the correction data included in the voltage correction table 134. HVtbl[ ]=HVtbl[ ]-(HVfft[ ]-HVcfft[ ])

[0125] To prevent overcorrection, the correction value HVtbl[ ] may be calculated using a value obtained by multiplying the correction amounts HVfft[ ] and HVcfft[ ] by a coefficient greater than 0 and less than 1.

[0126] 5.2 Effect (14) According to the fourth embodiment, selected frequency components are extracted from the time series data of the multiple voltage command values ​​HVc[ ] set during the period in which the first burst output is performed, and correction data is calculated. By using the time series data of the voltage command value HVc[ ], it is possible to correct the fluctuations in the voltage command value HVc set by the exposure apparatus 200, and perform the correction more appropriately.

[0127] (15) According to the fourth embodiment, the time-series data of the voltage command value HVc[ ] is Fourier transformed to calculate the spectrum data FFThvc[ ]. The frequency component FFThvc[freq] selected from the spectrum data FFThvc[ ] is inverse Fourier transformed to calculate the voltage data HVcfft[ ]. The correction data is calculated using this voltage data HVcfft[ ]. According to this, correction data corresponding to the phase shift between the switching of the target wavelengths λ1 and λ2 and the fluctuation of the voltage command value HVc is calculated, so that the pulse energy En can be further stabilized. In other respects, the fourth embodiment is similar to the third embodiment.

[0128] 6. Laser device that calculates correction data for each pulse number j within a wavelength fluctuation period 6.1 Update process of voltage correction table 134 Fig. 22 is a flowchart showing details of the process of updating the voltage correction table 134 in the fifth embodiment. The process shown in Fig. 22 corresponds to the subroutine S30 in Fig. 13. Fig. 23 is a graph showing a periodically changing wavelength. The horizontal axis of Fig. 23 indicates the pulse number i in the burst output, and the vertical axis indicates the wavelength. The pulse number j within a wavelength variation cycle indicates the ordinal pulse within the wavelength variation cycle. For example, if the number of pulses in one cycle is four, j is an integer from 1 to 4.

[0129] The process of S31a in Fig. 22 is similar to that described with reference to Fig. 14. However, the average value Enavg of the pulse energy En[ ] corresponds to the ninth average value in the present disclosure.

[0130] In S32e, the laser control processor 130 calculates the average value En#javg of the pulse energy En[#j] for each pulse number j within the wavelength variation period. Pulse energy En[#j] refers to the arrangement of pulse energy En for pulse number j among the pulse energy En[ ]. For example, if j is 1, the pulse with pulse number j corresponds to pulses with pulse numbers i of 1, 5, 9, . . . in the burst output, and if j is 2, the pulse with pulse number j corresponds to pulses with pulse numbers i of 2, 6, 10, . . . In the burst output, the average value En#javg is expressed as En#1avg if j is 1, and as En#2avg if j is 2. The average value En#1avg corresponds to the seventh average value in this disclosure. The average value En#2avg corresponds to the eighth average value in this disclosure. The number of average values ​​En#javg corresponds to the maximum value of j.

[0131] In S33e, the laser control processor 130 calculates the difference ΔEn_j between the average value En_javg and the average value Enavg using the following formula: ΔEn#j=En#javg-Enavg For example, if the value of j is 1, the difference ΔEn#j is represented as ΔEn#1, and if the value of j is 2, the difference ΔEn#j is represented as ΔEn#2.

[0132] In S34e, the laser control processor 130 converts the differences ΔEn#j into voltage correction amounts ΔHV#j using the following formula: ΔHV#j=ΔEn#j / HVepgain

[0133] As in the first embodiment, the correction value HVtbl[#j] may be calculated using the correction amount ΔHV#j. However, when the voltage command value HVc is controlled so that the pulse energy En approaches the target pulse energy Et as described with reference to Fig. 7, the fluctuation of the voltage command value HVc may include a frequency component corresponding to the reciprocal of the wavelength fluctuation period, as shown in Fig. 17. As described in the second embodiment, in order to further stabilize the pulse energy En, it is desirable to also correct the fluctuation of the voltage command value HVc.

[0134] The process of S35b is similar to that described with reference to Fig. 16. However, the average value HVcavg of the voltage command value HVc[ ] corresponds to the twelfth average value in the present disclosure.

[0135] In S36e, the laser control processor 130 calculates an average value HVc#javg of the voltage command value HVc[#j] for each pulse number j within the wavelength variation period. The voltage command value HVc[#j] refers to the arrangement of the voltage command value HVc for the pulse with pulse number j among the voltage command values ​​HVc[ ]. For example, if the value of j is 1, the average value HVc#javg is expressed as HVc#1avg, and if the value of j is 2, the average value HVc#1avg corresponds to the tenth average value in this disclosure, and the average value HVc#2avg corresponds to the eleventh average value in this disclosure. The number of average values ​​HVc#javg corresponds to the maximum value of j.

[0136] In S37e, the laser control processor 130 calculates the difference ΔHVc#j between the average value HVc#javg and the average value HVcavg using the following formula: ΔHVc#j=HVc#javg-HVcavg For example, if the value of j is 1, the difference ΔHVc#j is expressed as ΔHVc#1, and if the value of j is 2, the difference ΔHVc#j is expressed as ΔHVc#2.

[0137] In S38e, the laser control processor 130 calculates the correction value HVtbl[#j] using the following formula, and updates the correction data included in the voltage correction table 134. HVtbl[#j]=HVtbl[#j]-(ΔHV#j-ΔHVc#j) In this way, the correction value HVtbl[#j] is calculated for each pulse number j in the wavelength variation period. Here, the initial value of HVtbl[#j] may be set in advance by the adjusted light emission (see FIG. 4).

[0138] To prevent overcorrection, the correction value HVtbl[#j] may be calculated using a value obtained by multiplying the correction amounts ΔHV#j and ΔHVc#j by a coefficient greater than 0 and less than 1.

[0139] The calculated correction values ​​HVtbl[#j] are an array of the same values ​​for the same pulse number j. However, the present disclosure is not limited to this, and the correction values ​​HVtbl[#j] may be changed in one burst output. For example, the correction values ​​HVtbl[#j] may be calculated using values ​​obtained by multiplying the correction amounts ΔHV#j and ΔHVc#j by a function of time.

[0140] 6.2 Effect (16) According to the fifth embodiment, the average value En#1avg of pulse energy En[#1] of pulses whose pulse number j is 1 within a wavelength fluctuation period, the average value En#2avg of pulse energy En[#2] of pulses whose pulse number j is 2, and the average value Enavg of pulse energy En[ ] are calculated. Correction data is calculated using the difference ΔEn#1 between the average value En#1avg and the average value Enavg, and the difference ΔEn#2 between the average value En#2avg and the average value Enavg. According to this, correction data corresponding to the phase shift between the switching of the target wavelengths λ1 and λ2 and the fluctuation of the pulse energy En is calculated, so that the pulse energy En can be further stabilized.

[0141] (17) According to the fifth embodiment, the correction value HVtbl[#j] is calculated for each pulse number j in the wavelength fluctuation cycle when the pulsed laser beam is output during the period in which the first burst output is performed. This allows the correction data including the correction value HVtbl[#j] to be calculated at high speed.

[0142] (18) According to the fifth embodiment, an average value HVc#1avg of the voltage command value HVc[#1] when the pulse number j in the wavelength fluctuation period is 1, an average value HVc#2avg of the voltage command value HVc[#2] when the pulse number j is 2, and an average value HVcavg of the voltage command value HVc[ ] are calculated. Correction data is calculated using a difference ΔHVc#1 between the average value HVc#1avg and the average value HVcavg, and a difference ΔHVc#2 between the average value HVc#2avg and the average value HVcavg. According to this, correction data corresponding to the phase shift between the switching of the target wavelengths λ1 and λ2 and the fluctuation of the voltage command value HVc is calculated, so that the pulse energy En can be further stabilized. In other respects, the fifth embodiment is similar to the second embodiment.

[0143] 7. Laser device that sets voltage command value HVc based on target pulse energy Et 7.1 Control by the laser control processor 130 24 is a flowchart showing processing for outputting pulsed laser light executed by the laser control processor 130 in the sixth embodiment. In the sixth embodiment, the laser control processor 130 calculates the voltage command value HVc based on the target pulse energy Et received from the exposure control processor 210 as follows, thereby acquiring the voltage command value HVc. The configuration of the sixth embodiment may be the same as that of the first embodiment, except that the monitor module 17 measures not only the wavelength of the pulsed laser light but also the pulse energy En.

[0144] In S10f, the laser control processor 130 receives the target pulse energy Et from the exposure control processor 210. The target pulse energy Et does not have to be received for each pulse, but may be received for each burst output, for example. In S12f, the laser control processor 130 detects the pulse energy En of the pulsed laser light using the monitor module 17.

[0145] In S13f, the laser control processor 130 calculates the difference ΔEn between the detected pulse energy En and the target pulse energy Et using the following formula: ΔEn = En - Et

[0146] In S14f, the laser control processor 130 converts the difference ΔEn into a voltage correction amount ΔHV using the following formula: ΔHV=ΔEn / HVepgain

[0147] In S15f, the laser control processor 130 updates the voltage command value HVc according to the following formula. HVc=HVc-ΔHV For example, if the pulse energy En detected in S12f is smaller than the target pulse energy Et, the difference ΔEn and the correction amount ΔHV become negative numbers in S13f and S14f. In this case, the absolute value of the voltage command value HVc, which is a positive number, becomes larger in S15f, so the pulse energy En of the next pulse becomes larger.

[0148] The processing from S16a to S19 is the same as that described with reference to Figure 12. After S19, the laser control processor 130 returns the processing to S12f.

[0149] 7.2 Control by the exposure control processor 210 25 is a flowchart showing the laser control process executed by the exposure control processor 210 in the sixth embodiment. The exposure control processor 210 does not determine the voltage command value HVc.

[0150] In S80f, the exposure control processor 210 transmits the target pulse energy Et to the laser control processor 130 of the laser device 100a. The target pulse energy Et does not have to be transmitted for each pulse, and may be transmitted for each burst output, for example.

[0151] The process of S91 is the same as that described with reference to Fig. 7. The exposure control processor 210 repeats the process of S91 to cause the laser device 100a to output pulsed laser light. In other respects, the sixth embodiment is similar to any of the first to fifth embodiments.

[0152] 8.Other 8.1 Configuration of Monitor Module 17 26 shows a schematic configuration of the monitor module 17 used in the comparative example and the first to sixth embodiments. The monitor module 17 includes a beam splitter 17a, an energy sensor 17b, and an etalon spectroscope . Beam splitter 17a is located in the optical path of the pulsed laser beam reflected by beam splitter 16. Energy sensor 17b is located in the optical path of the pulsed laser beam reflected by beam splitter 17a.

[0153] The etalon spectroscope 18 is disposed in the optical path of the pulsed laser light transmitted through the beam splitter 17a, and includes a diffusion plate 18a, an etalon 18b, a condenser lens 18c, and a line sensor 18d.

[0154] The diffusion plate 18a is located in the optical path of the pulsed laser light that has passed through the beam splitter 17a. The diffusion plate 18a has many projections and recesses on its surface, and is configured to transmit and diffuse the pulsed laser light. The etalon 18b is located in the optical path of the pulsed laser light transmitted through the diffusion plate 18a. The etalon 18b includes two partially reflecting mirrors. The two partially reflecting mirrors face each other with a predetermined air gap between them and are bonded together via a spacer.

[0155] The condenser lens 18c is located in the optical path of the pulsed laser light that has passed through the etalon 18b. Line sensor 18d is located on the optical path of the pulsed laser light that has passed through condenser lens 18c, at the focal plane of condenser lens 18c. Line sensor 18d receives interference fringes formed by etalon 18b and condenser lens 18c. Interference fringes are interference patterns of pulsed laser light and have a concentric circular shape, and the square of the distance from the center of these concentric circles is proportional to the change in wavelength.

[0156] Line sensor 18d is a light distribution sensor including a large number of light receiving elements arranged one-dimensionally. Alternatively, instead of line sensor 18d, an image sensor including a large number of light receiving elements arranged two-dimensionally may be used as the light distribution sensor. Each light receiving element is called a channel. The light intensity distribution of the interference fringes is obtained from the light intensity detected in each channel.

[0157] 8.2 Operation of Monitor Module 17 The energy sensor 17b detects the pulse energy En of the pulsed laser beam and outputs data on the pulse energy En to the laser control processor 130. The data on the pulse energy En may be used by the laser control processor 130 to feedback control the voltage command value HVc in the sixth embodiment. Furthermore, the timing at which the data on the pulse energy En is received can be used as a reference for the timing at which the laser control processor 130 outputs a data output trigger to the etalon spectrometer 18.

[0158] The etalon spectrometer 18 generates a measurement waveform from the interference pattern of the pulsed laser light detected by the line sensor 18 d. The etalon spectrometer 18 transmits the measurement waveform to the laser control processor 130 in accordance with a data output trigger output from the laser control processor 130. The measured waveform is also called a fringe waveform, and indicates the relationship between the distance from the center of the concentric circles that make up the interference fringes and the light intensity.

[0159] The laser control processor 130 calculates the central wavelength of the pulsed laser beam as the measured wavelength using the measurement waveform output from the etalon spectrometer 18. Alternatively, a controller (not shown) included in the etalon spectrometer 18 calculates the measured wavelength and transmits it to the laser control processor 130. The laser control processor 130 outputs control signals to drivers (not shown) of the rotation stages 143 and 163 based on the target wavelengths λ1 and λ2 and the measured wavelength, thereby feedback-controlling the central wavelength of the pulsed laser beam.

[0160] 8.3 Supplementary Information The above description is intended to be illustrative rather than limiting. Thus, it will be apparent to one skilled in the art that modifications can be made to the disclosed embodiments without departing from the scope of the claims. It will also be apparent to one skilled in the art that the disclosed embodiments can be used in combination.

[0161] Terms used throughout this specification and claims should be construed as "open ended" unless expressly stated otherwise. For example, words such as "comprise," "have," "comprise," and "equip" should be construed as meaning "without excluding the presence of elements other than those listed." In addition, the modifier "a" should be construed as meaning "at least one" or "one or more." In addition, the term "at least one of A, B, and C" should be construed as "A," "B," "C," "A+B," "A+C," "B+C," or "A+B+C." Furthermore, it should be construed as including combinations of these with elements other than "A," "B," and "C."

Claims

1. A control method for a discharge excitation type laser device having a power supply for controlling pulse energy of pulsed laser light, comprising: In a first period, a pulsed laser beam including a plurality of pulses is output from the discharge excitation laser device while periodically varying the wavelength; calculating correction data for correcting a voltage command value set in the power supply in accordance with fluctuations in the wavelength, using first time-series data of pulse energies of the plurality of pulses; during a second period, acquiring the voltage command value, correcting the acquired voltage command value using the correction data, and causing the discharge excitation laser device to output a pulsed laser beam in accordance with the corrected voltage command value; A control method comprising:

2. 2. The control method according to claim 1, the first period corresponds to a period during which a first burst output is performed, and the second period corresponds to a period during which a second burst output following the first burst output is performed; calculating the correction data after the end of the first period and before the start of the second period; Control method.

3. 2. The control method according to claim 1, storing the correction data in a table; correcting the voltage command value using the correction data read from the table; Control method.

4. 2. The control method according to claim 1, calculating the correction data based on an average value of pulse energies of the plurality of pulses; Control method.

5. 2. The control method according to claim 1, a first average value of pulse energy of first wavelength pulses output according to a first target wavelength among the plurality of pulses; a second average value of pulse energy of second wavelength pulses output according to a second target wavelength among the plurality of pulses; and a third average value of the pulse energies of the plurality of pulses; and calculating the correction data using a difference between the first average value and the third average value and a difference between the second average value and the third average value. Control method.

6. 2. The control method according to claim 1, calculating a correction value included in the correction data for each target wavelength set during the first period; Control method.

7. 2. The control method according to claim 1, calculating the correction data by further using second time-series data of the plurality of voltage command values ​​set in the first period; Control method.

8. 8. The control method according to claim 7, calculating the correction data based on an average value of the plurality of voltage command values; Control method.

9. 2. The control method according to claim 1, a fourth average value of the voltage command values ​​when a first target wavelength is set among the plurality of voltage command values ​​set in the first period; and a fifth average value of the voltage command values ​​when a second target wavelength is set among the plurality of voltage command values; and a sixth average value of the plurality of voltage command values; and further calculating the correction data by using a difference between the fourth average value and the sixth average value and a difference between the fifth average value and the sixth average value. Control method.

10. 2. The control method according to claim 1, extracting selected frequency components from the first time-series data to calculate the correction data; Control method.

11. 11. The control method according to claim 10, the selected frequency component is a frequency component corresponding to an inverse of a wavelength fluctuation period when the pulsed laser beam is output during the first period. Control method.

12. 2. The control method according to claim 1, calculating spectral data by performing a Fourier transform on the first time-series data, and calculating the correction data using data obtained by performing an inverse Fourier transform on selected frequency components of the spectral data; Control method.

13. 2. The control method according to claim 1, calculating a correction value included in the correction data for each pulse output during the first period; Control method.

14. 2. The control method according to claim 1, extracting selected frequency components from second time-series data of the plurality of voltage command values ​​set in the first period to calculate the correction data; Control method.

15. 2. The control method according to claim 1, calculating spectral data by performing a Fourier transform on second time-series data of the plurality of voltage command values ​​set in the first period, and calculating the correction data by further using data obtained by performing an inverse Fourier transform on selected frequency components of the spectral data; Control method.

16. 2. The control method according to claim 1, a seventh average value of pulse energies of pulses having a first pulse number within a wavelength variation period among the plurality of pulses; and an eighth average value of pulse energies of pulses having a second value of the pulse number among the plurality of pulses; a ninth average value of pulse energies of the plurality of pulses; and calculating the correction data using a difference between the seventh average value and the ninth average value and a difference between the eighth average value and the ninth average value. Control method.

17. 2. The control method according to claim 1, calculating a correction value included in the correction data for each pulse number within a wavelength variation cycle when the pulsed laser beam is output during the first period; Control method.

18. 2. The control method according to claim 1, a tenth average value of the voltage command values ​​set for pulses having a first pulse number within a wavelength variation period among the plurality of voltage command values ​​set in the first period; an eleventh average value of the voltage command values ​​set for a pulse having a second value as the pulse number among the plurality of voltage command values; a twelfth average value of the plurality of voltage command values; and further calculating the correction data by using a difference between the tenth average value and the twelfth average value and a difference between the eleventh average value and the twelfth average value. Control method.

19. a power supply for controlling the pulse energy of the pulsed laser light; a processor controlling the power supply, In a first period, a pulsed laser beam including a plurality of pulses is output from the discharge excitation laser device while periodically varying the wavelength between a first wavelength and a second wavelength; calculating correction data for correcting a voltage command value set in the power supply in accordance with fluctuations in the wavelength, using first time-series data of pulse energies of the plurality of pulses; during a second period, acquiring the voltage command values ​​from an exposure device, correcting the acquired voltage command values ​​using the correction data, and causing the discharge excitation laser device to output pulsed laser light in accordance with the corrected voltage command values ​​corresponding to the first wavelength and the second wavelength, respectively; the processor; A discharge excitation type laser device comprising:

20. A method for manufacturing an electronic device, comprising: a power supply for controlling the pulse energy of the pulsed laser light; a processor controlling the power supply, In a first period, a pulsed laser beam including a plurality of pulses is output from the discharge excitation laser device while periodically varying the wavelength; calculating correction data for correcting a voltage command value set in the power supply in accordance with fluctuations in the wavelength, using first time-series data of pulse energies of the plurality of pulses; during a second period, acquiring the voltage command value, correcting the acquired voltage command value using the correction data, and causing the discharge excitation laser device to output a pulsed laser beam in accordance with the corrected voltage command value; the processor; A pulsed laser beam is generated by the discharge excitation laser device comprising: A pulsed laser beam is output to an exposure device. In order to manufacture an electronic device, a photosensitive substrate is exposed to pulsed laser light in the exposure apparatus. A method for manufacturing an electronic device, comprising:

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