Method for evaluating carbon concentration of silicon sample, method for evaluating silicon wafer manufacturing process, method for manufacturing silicon wafer, and method for manufacturing silicon single crystal ingot

Abstract

To provide an evaluation method capable of accurately evaluating the carbon concentration of a silicon sample.SOLUTION: A method for evaluating the carbon concentration of a silicon sample includes performing a hydrogen atom introduction process to introduce hydrogen atoms into a silicon sample, forming a Schottky electrode on one surface of the silicon sample after the hydrogen atom introduction process and forming an ohmic layer on the other surface to form a diode, performing DLTS measurement of the diode, and evaluating the carbon concentration of the silicon sample on the basis of the measurement results obtained by the DLTS measurement, and the measurement results include measurement results regarding the density of trap levels resulting from complexes formed by at least carbon atoms and hydrogen atoms, and the formation of the Schottky electrode is performed by introducing the silicon sample after the hydrogen atom introduction process into a vapor deposition apparatus and performing a vapor deposition process with a Schottky electrode-forming vapor deposition material, and the carbon concentration evaluation method further includes performing a vapor deposition process with a pretreatment vapor deposition material that is the same as or similar to the Schottky electrode-forming vapor deposition material in the vapor deposition apparatus before introducing the silicon sample after the hydrogen atom introduction process to deposit the pretreatment vapor deposition material on at least a part of the vapor deposition apparatus.SELECTED DRAWING: None

Description

[Technical Field]

[0001] The present invention relates to a method for evaluating the carbon concentration of a silicon sample, a method for evaluating a silicon wafer manufacturing process, a method for manufacturing a silicon wafer, and a method for manufacturing a silicon single crystal ingot. [Background technology]

[0002] In recent years, evaluation of the carbon concentration of silicon samples has been investigated (see, for example, Patent Document 1). [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Patent No. 6528710 specification Summary of the Invention [Problem to be solved by the invention]

[0004] Silicon wafers used as semiconductor substrates are required to have reduced impurity contamination, which can cause degradation of device characteristics. In recent years, carbon has attracted attention as an impurity contained in silicon wafers, and methods for reducing carbon contamination in silicon wafers have been investigated.

[0005] To reduce carbon contamination, it is desirable to evaluate the carbon concentration of silicon samples and, based on the evaluation results, manage the silicon wafer manufacturing process and the silicon single crystal ingot manufacturing process from which silicon wafers are cut so as to reduce the carbon mixed in during the manufacturing process. Being able to accurately evaluate the carbon concentration of silicon samples is useful for such process management.

[0006] An object of one aspect of the present invention is to provide an evaluation method capable of accurately evaluating the carbon concentration of a silicon sample. [Means for solving the problem]

[0007] Japanese Patent No. 6528710 (Patent Document 1) proposes evaluating the carbon concentration of a silicon sample based on the results of measurements using the DLTS (Deep-Level Transient Spectroscopy) method. For DLTS measurements, a Schottky electrode is formed on one surface of a silicon sample and an ohmic layer is formed on the other surface, creating a diode (sample element) on the silicon sample. The Schottky electrode can be formed by introducing the silicon sample into a vapor deposition apparatus containing a Schottky electrode-forming vapor deposition material and performing a vapor deposition process. The present inventors conducted extensive research to provide an evaluation method capable of accurately evaluating the carbon concentration of a silicon sample. As a result, they discovered that accurate carbon concentration evaluation is possible by performing a pretreatment process using a Schottky electrode-forming vapor deposition material in the vapor deposition apparatus before forming the Schottky electrode. The present inventors speculate that this is because the pretreatment process allows the deposition material for Schottky electrode formation to be deposited on at least a portion of the vapor deposition apparatus, and this deposit prevents metal impurities adhering to the vapor deposition apparatus (e.g., inner walls, component surfaces, etc.) from being mixed into the Schottky electrode. Because a Schottky electrode containing metal impurities still functions as an electrode, the contamination of the Schottky electrode of a DLTS measurement diode has not previously been considered when evaluating silicon samples using DLTS measurements. In response to this, the present inventors conducted extensive research to accurately evaluate the carbon concentration of silicon samples using DLTS measurements, and as a result, they came to focus on the contamination of Schottky electrodes with metal impurities.

[0008] That is, one aspect of the present invention is as follows. [1] performing a hydrogen atom introduction process to introduce hydrogen atoms into a silicon sample; forming a Schottky electrode on one surface of the silicon sample after the hydrogen atom introduction treatment and an ohmic layer on the other surface to fabricate a diode; Performing DLTS measurements on the diodes; and Evaluating the carbon concentration of the silicon sample based on the measurement results obtained by the DLTS measurement; Including, the measurement results include a measurement result regarding a density of trap levels caused by complexes formed by at least carbon atoms and hydrogen atoms, The formation of the Schottky electrode is carried out by introducing the silicon sample after the hydrogen atom introduction treatment into a deposition apparatus and performing a deposition treatment using a deposition material for forming a Schottky electrode; and the method for evaluating a carbon concentration in a silicon sample further includes, before introducing the silicon sample after the hydrogen atom introduction treatment, performing a vapor deposition process using a pretreatment vapor deposition material that is the same vapor deposition material as the Schottky electrode formation vapor deposition material or a vapor deposition material of the same type in the vapor deposition apparatus, thereby depositing the pretreatment vapor deposition material in at least a part of the vapor deposition apparatus. [2] The method for evaluating the carbon concentration of a silicon sample according to claim 1, wherein the silicon sample is n-type silicon and the Schottky electrode is an Au electrode. [3] The metal impurity content of the above Au electrode is 9 μg / mm 2 The method for evaluating the carbon concentration of a silicon sample according to [2], wherein the carbon concentration is less than 100 ppm. [4] The carbon concentration evaluation method for a silicon sample according to [3], wherein the metal impurity is Al. [5] The method for evaluating the carbon concentration of a silicon sample according to [4], wherein the vapor deposition apparatus in which the vapor deposition process for depositing the pretreatment vapor deposition material is performed is the vapor deposition apparatus in which an Al-containing vapor deposition material is placed and the vapor deposition process is performed. [6] The method for evaluating the carbon concentration of a silicon sample according to any one of [1] to [5], wherein the deposition treatment time for forming the Schottky electrode is 4 minutes or more and 10 minutes or less. [7] The method for evaluating a carbon concentration in a silicon sample according to any one of [1] to [6], wherein the measurement result regarding the density of trap levels caused by complexes formed of at least carbon atoms and hydrogen atoms is a measurement result regarding the density of at least one trap level selected from the group consisting of Ec-0.10 eV, Ec-0.13 eV, and Ec-0.15 eV. [8] The method for evaluating the carbon concentration of a silicon sample according to any one of [1] to [7], wherein the measurement result regarding the density of trap levels caused by complexes formed of at least carbon atoms and hydrogen atoms is a measurement result regarding the density of trap levels at Ec-0.15 eV. [9] The method for evaluating the carbon concentration of a silicon sample according to any one of [1] to [8], wherein the hydrogen atom introduction treatment includes contacting the silicon sample with nitric acid or hydrofluoric acid.

[10] Evaluating the carbon concentration of silicon wafers manufactured in a silicon wafer manufacturing process to be evaluated by any of the methods described in [1] to [9]; and Evaluating the degree of carbon contamination in the silicon wafer manufacturing process to be evaluated based on the results of the above evaluation; A method for evaluating a silicon wafer manufacturing process, comprising:

[11] Evaluating the silicon wafer manufacturing process by the evaluation method described in

[10] ; and manufacturing silicon wafers in a silicon wafer manufacturing process in which the degree of carbon contamination has been determined to be at an acceptable level as a result of the above evaluation, or in which the degree of carbon contamination has been determined to exceed the acceptable level as a result of the above evaluation, after performing a carbon contamination reduction treatment on the silicon wafer manufacturing process; A method for manufacturing a silicon wafer, comprising:

[12] Growing a silicon single crystal ingot; Evaluating the carbon concentration of a silicon sample cut out from the silicon single crystal ingot by any of the methods described in [1] to [9]; Determining the manufacturing conditions for the silicon single crystal ingot based on the results of the above evaluation; and growing a silicon single crystal ingot under determined manufacturing conditions; A method for producing a silicon single crystal ingot, comprising: [Effects of the Invention]

[0009] According to one aspect of the present invention, it is possible to provide an evaluation method that can accurately evaluate the carbon concentration of a silicon sample. [Brief explanation of the drawings]

[0010] [Figure 1] FIG. 1 shows the carbon concentrations determined in Examples 1 to 3 and Comparative Examples 1 to 3. [Figure 2] FIG. 2 shows the DLTS spectra (after fitting) obtained in Example 1 and Comparative Example 1. DETAILED DESCRIPTION OF THE INVENTION

[0011] [Method for evaluating carbon concentration in silicon samples] One aspect of the present invention relates to a method for evaluating the carbon concentration of a silicon sample, including: performing a hydrogen atom introduction process to introduce hydrogen atoms into a silicon sample; forming a Schottky electrode on one surface of the silicon sample after the hydrogen atom introduction process and an ohmic layer on the other surface to fabricate a diode; performing DLTS measurement of the diode; and evaluating the carbon concentration of the silicon sample based on the measurement results obtained by the DLTS measurement. In the carbon concentration evaluation method, the measurement results include measurement results regarding the density of trap levels resulting from complexes formed by at least carbon atoms and hydrogen atoms. The Schottky electrode is formed by introducing the silicon sample after the hydrogen atom introduction process into a vapor deposition apparatus and performing a vapor deposition process using a Schottky electrode-forming vapor deposition material. The carbon concentration evaluation method further includes performing a vapor deposition process using a pretreatment vapor deposition material that is the same vapor deposition material as the Schottky electrode-forming vapor deposition material or a vapor deposition material of the same type as the Schottky electrode-forming vapor deposition material in the vapor deposition apparatus before introducing the silicon sample after the hydrogen atom introduction process. The carbon concentration evaluation method will be described in more detail below.

[0012] <Silicon sample to be evaluated> The silicon sample to be evaluated in the carbon concentration evaluation method can be, for example, a silicon sample cut from a silicon single crystal ingot. For example, a sample cut into a wafer shape from a silicon single crystal ingot or a sample obtained by further cutting a portion from a sample cut into a wafer shape can be subjected to evaluation. The silicon sample to be evaluated can also be various silicon wafers used as semiconductor substrates (e.g., polished wafers, epitaxial wafers, etc.) or silicon samples cut from such silicon wafers. The silicon wafer can also be a silicon wafer that has been subjected to various processing treatments (e.g., polishing, etching, cleaning, etc.) that are commonly performed on silicon wafers. In one form, the silicon sample can be n-type silicon, and in another form, it can be p-type silicon.

[0013] <Hydrogen atom introduction treatment> By subjecting a silicon sample to hydrogen atom introduction treatment, trap levels due to complexes formed by at least carbon atoms and hydrogen atoms (hereinafter also referred to as "carbon-hydrogen-related complexes") can be formed in the band gap of silicon. This makes it possible to obtain evaluation results regarding the density of the trap levels. A specific example of such evaluation results is the peak intensity (DLTS signal intensity) obtained by evaluation using the DLTS method. Regarding the trap levels, the density of the trap levels in the band gap of silicon after hydrogen atom introduction treatment can be correlated with the carbon concentration of the silicon sample. Therefore, the evaluation result regarding the density of the trap levels obtained by DLTS measurement performed after hydrogen atom introduction treatment, i.e., the evaluation result correlated with the density of the trap levels, can be correlated with the carbon concentration of the silicon sample, and therefore the carbon concentration of the silicon sample to be evaluated can be evaluated based on such evaluation result.

[0014] Before fabricating a diode for DLTS measurement, the silicon sample to be evaluated is subjected to a hydrogen atom introduction process. The introduction of hydrogen atoms can form trap levels due to carbon-hydrogen-related complexes. The introduction of hydrogen atoms can be performed by dry processing (dry process) or wet processing (wet process, i.e., using a solution). For example, the introduction of hydrogen atoms by dry processing can be performed by ion implantation, hydrogen plasma, etc. Note that the introduction of hydrogen atoms in the present invention and this specification also includes the introduction of hydrogen atoms in the form of ions or plasma.

[0015] The introduction of hydrogen atoms by wet processing can be achieved by contacting (e.g., immersing) the silicon sample in a solution. The solution used here may be either an acid solution or a base solution, as long as it contains hydrogen atoms in either an ionized state (ion) or a salt state. Examples of acid solutions include HF-containing solutions such as hydrofluoric acid (hydrofluoric acid aqueous solution), a mixed solution of hydrofluoric acid and nitric acid (hydrofluoric nitric acid), a mixed solution of sulfuric acid and hydrogen peroxide, and a mixed solution of hydrochloric acid and hydrogen peroxide. Examples of base solutions include sodium hydroxide solution, potassium hydroxide solution, and a mixed solution of ammonia water and hydrogen peroxide. The above-mentioned various solutions are preferably aqueous solutions (solutions containing water), and more preferably aqueous solutions. The acid concentration of the acid solution and the base concentration of the base solution are not particularly limited. As an example, hydrofluoric acid may be used with an HF concentration of 1 to 25 mass % (hydrofluoric acid aqueous solution), and hydrofluoric nitric acid may be used with a mixed solution of nitric acid (nitric acid aqueous solution) with an HNO concentration of 69 mass % and hydrofluoric acid (hydrofluoric acid aqueous solution) with an HF concentration of 50 mass %. Wet treatment with each solution can be performed by, for example, contacting (e.g., immersing) the silicon sample to be evaluated in the solution for 1 to 10 minutes. Before and / or after contact with the solution, one or more treatments such as water washing and drying can be performed as pre-treatment and / or post-treatment.

[0016] <Heat treatment> The carbon concentration evaluation method can include a heat treatment in which the silicon sample to be evaluated is heated using a heating means before the hydrogen atom introduction treatment. The heat treatment preferably heats the silicon sample to a temperature of 100°C or higher. Here, the heating temperature refers to the temperature of the silicon sample surface heated by the heat treatment. After the heat treatment is completed, the hydrogen atom introduction treatment can be started, for example, within 300 minutes. For example, if the hydrogen atom introduction treatment is a treatment in which the silicon sample to be evaluated is brought into contact with a solution, the contact of the silicon sample to be evaluated with the solution can be started, for example, within 300 minutes, preferably within 60 minutes, after the heat treatment is completed.

[0017] It is presumed that the above-mentioned heat treatment can dissociate the carbon-hydrogen-related complexes that were formed between the hydrogen atoms that were present in the silicon sample before the hydrogen atom introduction treatment and the carbon atoms in the silicon sample. Hydrogen atoms may be unintentionally introduced into a silicon sample during processing (e.g., cleaning, hydrogen annealing, etc.) performed during the manufacturing process. The introduced hydrogen atoms may form hydrocarbon-related complexes with carbon atoms in the silicon sample. However, it is difficult to perform an evaluation that takes into account the time-dependent decrease in trap levels due to the hydrocarbon-related complexes derived from unintentionally introduced hydrogen atoms. The presence of such hydrocarbon-related complexes in the silicon sample before the hydrogen atom introduction process is thought to be a cause of variability in the evaluation results obtained by the above-described evaluation method. Therefore, it is thought that such variability can be reduced by performing a heat treatment at a temperature capable of dissociating such hydrocarbon-related complexes before the hydrogen atom introduction process.

[0018] Examples of heating means that can be used include a hot plate and a heating furnace. For example, a silicon sample to be evaluated before the hydrogen atom introduction treatment can be placed on a hot plate or in a heating furnace and heated to a temperature of 100°C or higher. The heating temperature is preferably 100°C or higher to dissociate carbon-hydrogen-related complexes in the silicon sample to be evaluated before the hydrogen atom introduction treatment. The heating temperature can be, for example, 180°C or lower, 170°C or lower, 160°C or lower, or 150°C or lower, and can also exceed the values ​​exemplified here. The heating time at the heating temperature can be, for example, in the range of 10 seconds to 60 minutes. The heating treatment can be performed, for example, in an air atmosphere. Furthermore, the silicon sample to be evaluated between the heating treatment and the hydrogen atom introduction treatment, and between the hydrogen atom introduction treatment and the evaluation, can be placed in an air atmosphere at room temperature, unless otherwise specified. In the present invention and this specification, room temperature can be, for example, a temperature in the range of 15°C to 30°C.

[0019] <Diode fabrication> A diode can be fabricated by forming a Schottky electrode on one surface of the silicon sample after hydrogen atom introduction treatment and an ohmic layer on the other surface.

[0020] (Formation of Schottky electrode) In the carbon concentration evaluation method described above, the formation of a Schottky electrode on one surface of a silicon sample after hydrogen atom introduction is performed by introducing the silicon sample into a vapor deposition apparatus containing a Schottky electrode-forming vapor deposition material and performing a vapor deposition process. However, before introducing the silicon sample, a vapor deposition process (also referred to as "pretreatment") is performed using the same or similar vapor deposition material as the Schottky electrode-forming vapor deposition material. By performing such pretreatment, the same or similar vapor deposition material as the Schottky electrode-forming vapor deposition material can be deposited on at least a portion of the vapor deposition apparatus before the silicon sample is introduced. As described above, the deposited material is believed to prevent metal impurities adhering to the vapor deposition apparatus (e.g., inner walls, component surfaces, etc.) from being mixed into the Schottky electrode. The inventors believe that this contributes to improving the accuracy of carbon concentration evaluation of silicon samples.

[0021] As the vapor deposition device, a commercially available vapor deposition device that is normally used for forming a film such as a Schottky electrode or a vapor deposition device with a known configuration can be used.

[0022] The deposition material for forming the Schottky electrode can be selected based on the type of silicon sample on which the Schottky electrode is to be formed. For example, if the silicon sample is n-type silicon, gold (Au) can be used as the deposition material for forming the Schottky electrode. Au electrodes can be formed by performing a deposition process using Au as the deposition material.

[0023] In the present invention and this specification, the term "same type of vapor deposition material" refers to a vapor deposition material having the same composition, excluding unintentional composition variations such as variations in composition within or between lots that normally occur in the manufacturing process of the vapor deposition material, and variations in composition due to the inclusion of impurities that inevitably occur in the manufacturing process of the vapor deposition material. In one embodiment, the pretreatment evaporation material can be used to subsequently form a Schottky electrode on a silicon sample while it is still in the evaporation device. In this case, the pretreatment evaporation material and the evaporation material for forming the Schottky electrode are the same evaporation material. In another embodiment, after the pretreatment vapor deposition process, the pretreatment vapor deposition material is removed from the vapor deposition apparatus, and then the Schottky electrode-forming vapor deposition material is placed in the vapor deposition apparatus, and the silicon sample is introduced into the vapor deposition apparatus to perform the vapor deposition process (formation of the Schottky electrode). In this case, the pretreatment vapor deposition material is the same type of vapor deposition material as the Schottky electrode-forming vapor deposition material. In another embodiment, after the pretreatment vapor deposition process, the pretreatment vapor deposition material is removed from the vapor deposition apparatus, and then the silicon sample is introduced into the vapor deposition apparatus, and the Schottky electrode-forming vapor deposition material is placed in the vapor deposition apparatus to perform the vapor deposition process (formation of the Schottky electrode). In this case, the pretreatment vapor deposition material is the same type of vapor deposition material as the Schottky electrode-forming vapor deposition material.

[0024] If a deposition apparatus used in a deposition process for forming a Schottky electrode has previously been used in a deposition process using a metal-containing material other than the deposition material for forming the Schottky electrode, metal from the metal-containing material may remain in the deposition apparatus (e.g., adhering to the inner walls, component surfaces, etc.). This metal may be contaminated into the Schottky electrode during the deposition process. The inventors believe that such contaminated metal impurities may reduce the accuracy of carbon concentration evaluation of silicon samples using DLTS measurements. In contrast, performing the pretreatment described above can help prevent such metal impurities from being contaminated into the Schottky electrode. For example, the deposition apparatus used in the deposition process for depositing the deposition material for forming the Schottky electrode may be the same deposition apparatus used after the deposition process using an Al-containing deposition material. The Al-containing deposition material may be Al (i.e., metallic Al), an Al-containing alloy, an Al-containing compound, etc. In such cases, forming the Schottky electrode after performing the pretreatment described above can help prevent Al from being contaminated into the Schottky electrode as a metal impurity. For example, by forming a Schottky electrode after carrying out the pretreatment described above, the metal impurity content (e.g., Al content) can be reduced to 0 μg / mm 2 More than 9μg / mm 2 A Schottky electrode (for example, an Au electrode) of less than 1000 nm can be formed.

[0025] The pretreatment vapor deposition process can be performed by placing the same or similar vapor deposition material as the Schottky electrode-forming vapor deposition material in a vapor deposition apparatus without placing a silicon sample on which a Schottky electrode will subsequently be formed. This vapor deposition process allows the same or similar vapor deposition material as the Schottky electrode-forming vapor deposition material to be deposited on the inner wall surface of the vapor deposition apparatus, the surfaces of components installed in the vapor deposition apparatus, and the like. The vapor deposition conditions for the pretreatment vapor deposition process can be, for example, a film thickness set in the vapor deposition apparatus of approximately 10 nm to 300 nm, and a vapor deposition rate of approximately 1.0 Å / sec to 10.0 Å / sec.

[0026] Subsequently, the silicon sample after the hydrogen atom introduction treatment is introduced into the deposition apparatus (where the deposition material for forming a Schottky electrode is placed) after the above-mentioned deposition treatment (pretreatment) and a deposition treatment is performed to form a Schottky electrode on one surface of the silicon sample. The deposition treatment time for forming the Schottky electrode is preferably 4 minutes or more from the viewpoint of electrode formation, and 10 minutes or less from the viewpoint of further suppressing contamination of the electrode and / or the silicon sample due to the deposition treatment. The deposition rate of the deposition treatment for forming the Schottky electrode can be, for example, approximately 1.0 Å / sec to 10.0 Å / sec. The film thickness of the Schottky electrode can be, for example, approximately 10 nm to 300 nm, but is not limited to this range. The film thickness of the Schottky electrode can be determined by known methods, for example, as the film thickness detected by a film thickness sensor in the deposition apparatus.

[0027] (Ohmic layer formation) The order of forming the Schottky electrode and the ohmic layer on the silicon sample is not limited, and either can be performed first. The ohmic layer is formed on the surface of the silicon sample on the side opposite to the surface where the Schottky electrode is formed or will be formed. The formation of the ohmic layer can be carried out by a method usually used for fabricating an element for DLTS measurement, such as forming a Ga / In layer by rubbing gallium and indium, forming a Ga layer by rubbing gallium, etc.

[0028] <DLTS Measurement and Evaluation of Carbon Concentration> In the above carbon concentration evaluation method, DLTS measurement of the diode fabricated as described above is performed, and based on the measurement results obtained by the DLTS measurement, the carbon concentration of the silicon sample to be evaluated is evaluated. Here, the measurement results used for the evaluation of the carbon concentration include at least the measurement results regarding the density of trap levels due to a complex formed by carbon atoms and hydrogen atoms (carbon-hydrogen related complex).

[0029] The above carbon-hydrogen related complex is a complex formed by at least carbon atoms and hydrogen atoms, and can be, for example, a complex formed only by carbon atoms and hydrogen atoms, a complex formed by carbon atoms, hydrogen atoms, and oxygen atoms, etc. Specific examples of the trap levels due to the above carbon-hydrogen related complex include trap levels of Ec (energy at the bottom of the conduction band) - 0.10 eV, Ec - 0.13 eV, and Ec - 0. at 15 eV, and the trap level of Ec - 0.15 eV is preferred.

[0030] By fitting the DLTS spectrum obtained by DLTS measurement as the sum of each peak using a known method, the DLTS spectrum of trap levels due to hydrocarbon-related complexes can be separated. For example, in DLTS measurement at a frequency of 250 Hz, the carbon concentration can be determined based on the peak intensity (DLTS signal intensity) of the peak near 76 K for the trap level density at Ec-0.10 eV, the peak near 87 K for the trap level density at Ec-0.13 eV, and the peak near 101 K for the trap level density at Ec-0.15 eV. At least one peak is used to determine the carbon concentration, but two or three peaks may also be used. Generally, the higher the peak intensity, the higher the carbon concentration. From the perspective of performing carbon concentration evaluation with higher accuracy, it is preferable to determine the carbon concentration of the silicon sample to be evaluated based on the evaluation results at Ec-0.15 eV.

[0031] DLTS measurements are typically performed using the following method. The transient response of the capacitance of a diode (sample element) consisting of a silicon sample with a Schottky electrode on one surface and an ohmic layer on the other is measured by periodically applying a voltage while sweeping the temperature. The voltage application typically involves alternating and periodically applying a reverse voltage to form a depletion layer and a forward voltage to fill the trap levels in the depletion layer with carriers. The values ​​of the reverse and forward voltages are not particularly limited and can be set arbitrarily. A DLTS spectrum can be obtained by plotting the DLTS signal against temperature. The DLTS spectrum, obtained as the sum of the peaks detected by DLTS measurement, can be fitted using a known method to separate the DLTS spectrum for each trap level and detect its peak.

[0032] In the carbon concentration evaluation method, it is believed that the trap levels can be formed in an activated state by the hydrogen atom introduction process, and therefore the carbon concentration can be evaluated based on the measurement results of the trap level density without performing an electron beam irradiation process. In the present invention and this specification, "without performing an electron beam irradiation process" refers to not actively irradiating the silicon sample with an electron beam, but electron beam irradiation that inevitably occurs under sunlight, lighting, etc. is permitted. Furthermore, the electron beam refers to a flow of electrons obtained by applying an accelerating voltage to electrons. Electron beam irradiation processes have issues such as a long lead time, the need for large-scale equipment, increased costs, and the need for additional processes such as the formation of a protective oxide film in addition to the electron beam irradiation process, which increases the number of steps. Therefore, it is preferable to be able to evaluate the carbon concentration of a silicon sample without performing an electron beam irradiation process. However, in one embodiment of the carbon concentration evaluation method, electron beam irradiation can also be performed using a known method.

[0033] The evaluation of the carbon concentration based on the evaluation results of the density of trap levels caused by hydrocarbon-related complexes obtained by DLTS measurement can be performed using a calibration curve or without a calibration curve. When a calibration curve is not used, the carbon concentration can be evaluated using a relative criterion, for example, in which the larger the evaluation result, the higher the carbon concentration. For example, the larger the value of the peak intensity (DLTS signal intensity) of the DLTS spectrum, the higher the carbon concentration can be determined. When a calibration curve is used, it is preferable to create a calibration curve that shows the correlation between the trap level density obtained from the evaluation results (e.g., DLTS signal intensity) obtained for the silicon sample to be evaluated and the known carbon concentration. Relational equations for determining the trap level density from various evaluation results are publicly known. The known carbon concentration can also be measured and determined by a method other than the evaluation method used to evaluate the silicon sample to be evaluated. For example, the known carbon concentration can be determined by SIMS (Secondary Ion Mass Spectrometry), FT-IR (Fourier Transform Infrared Spectroscopy), or the like. Relational equations for calculating the carbon concentration from the evaluation results obtained by each of these methods are also publicly known. The silicon sample (silicon sample for preparing a calibration curve) to be evaluated by the same evaluation method as the silicon sample to be evaluated in order to prepare a calibration curve and the silicon sample for determining a known carbon concentration are preferably silicon samples cut from the same silicon sample (e.g., the same ingot, the same wafer, etc.) or silicon samples that have undergone the same manufacturing process. Regarding the preparation of a calibration curve, reference can also be made to paragraphs 0038 to 0040 of Patent Document 1 (Japanese Patent No. 6528710). The silicon sample for preparing a calibration curve is preferably a silicon sample that has been subjected to various treatments, such as hydrogen atom introduction treatment, in the same manner as the silicon sample to be evaluated.

[0034] [Method for evaluating silicon wafer manufacturing processes and method for manufacturing silicon wafers] One aspect of the present invention relates to a method for evaluating a silicon wafer manufacturing process, including evaluating the carbon concentration of silicon wafers manufactured in the silicon wafer manufacturing process to be evaluated by the carbon concentration evaluation method, and evaluating the degree of carbon contamination in the silicon wafer manufacturing process to be evaluated based on the results of the evaluation.

[0035] Another aspect of the present invention relates to a method for manufacturing a silicon wafer, including: evaluating a silicon wafer manufacturing process by the above-described method for evaluating a silicon wafer manufacturing process; and manufacturing a silicon wafer in the silicon wafer manufacturing process after performing a carbon contamination reduction treatment in the silicon wafer manufacturing process in which the level of carbon contamination has been determined to be at an acceptable level as a result of the evaluation, or in which the level of carbon contamination has been determined to exceed the acceptable level as a result of the evaluation.

[0036] The silicon wafer manufacturing process to be evaluated in the manufacturing process evaluation method can be some or all of the processes used to manufacture product silicon wafers. The manufacturing process for product silicon wafers generally includes slicing wafers from silicon single crystal ingots, surface treatments such as polishing and etching, cleaning, and further post-processing (epitaxial layer formation, etc.) that is performed as needed depending on the intended use of the wafers. Each of these steps and treatments is publicly known.

[0037] In silicon wafer manufacturing processes, carbon contamination can occur in silicon wafers due to contact between components used in the manufacturing process and the silicon wafers. By evaluating the carbon concentration of silicon wafers manufactured in the manufacturing process under evaluation and understanding the level of carbon contamination, it is possible to understand the tendency for carbon contamination to occur in product silicon wafers due to the silicon wafer manufacturing process under evaluation. That is, the higher the carbon concentration of silicon wafers manufactured in the manufacturing process under evaluation, the more likely it is that carbon contamination will occur in the manufacturing process under evaluation. Therefore, for example, if an acceptable level of carbon concentration is set in advance, and the carbon concentration determined for silicon wafers manufactured in the silicon wafer manufacturing process under evaluation exceeds the acceptable level, the manufacturing process under evaluation can be determined to have a high tendency for carbon contamination to occur and to be unusable as a manufacturing process for product silicon wafers. It is preferable that a silicon wafer manufacturing process under evaluation that is determined in this way be subjected to a carbon contamination reduction treatment before being used to manufacture product silicon wafers. This point will be described in more detail below.

[0038] The carbon concentration of a silicon wafer manufactured in a silicon wafer manufacturing process to be evaluated is determined by the carbon concentration evaluation method according to one aspect of the present invention. Details of the carbon concentration evaluation method are as described above. The silicon wafer to be subjected to carbon concentration evaluation is at least one silicon wafer manufactured in the silicon wafer manufacturing process to be evaluated, and may be two or more silicon wafers. When the carbon concentrations of two or more silicon wafers are determined, for example, the average, maximum, etc. of the determined carbon concentrations can be used to evaluate the silicon wafer manufacturing process to be evaluated. Furthermore, the silicon wafer may be subjected to carbon concentration evaluation in its wafer form, or a portion thereof may be cut out and subjected to carbon concentration evaluation. When two or more samples are cut out from a single silicon wafer and subjected to carbon concentration evaluation, the average, maximum, etc. of the carbon concentrations determined for the two or more samples can be determined as the carbon concentration of the silicon wafer.

[0039] In one embodiment of the silicon wafer manufacturing method, a silicon wafer manufacturing process is evaluated using the manufacturing process evaluation method, and silicon wafers are manufactured in a silicon wafer manufacturing process in which the level of carbon contamination is determined to be at an acceptable level as a result of the evaluation. This makes it possible to ship high-quality silicon wafers with a low carbon contamination level as product wafers. In another embodiment of the silicon wafer manufacturing method, a silicon wafer manufacturing process is evaluated using the manufacturing process evaluation method, and a carbon contamination reduction process is performed on a silicon wafer manufacturing process in which the level of carbon contamination is determined to exceed the acceptable level as a result of the evaluation. Silicon wafers are then manufactured in this silicon wafer manufacturing process. This reduces carbon contamination caused by the manufacturing process, making it possible to ship high-quality silicon wafers with a low carbon contamination level as product wafers. The acceptable level can be set appropriately depending on the quality required of the product wafers. Examples of carbon contamination reduction process include replacement and cleaning of components included in the silicon wafer manufacturing process. For example, when a SiC susceptor is used as a susceptor, which is a component for placing a silicon wafer, in the silicon wafer manufacturing process, the contact area with the susceptor may become carbon-contaminated due to deterioration of the susceptor after repeated use. In such cases, the carbon contamination caused by the susceptor can be reduced by, for example, replacing the susceptor.

[0040] [Method for manufacturing silicon single crystal ingots] One aspect of the present invention relates to a method for manufacturing a silicon single crystal ingot, including growing a silicon single crystal ingot, evaluating the carbon concentration of a silicon sample cut from the silicon single crystal ingot using the carbon concentration evaluation method, determining manufacturing conditions for the silicon single crystal ingot based on the results of the evaluation, and growing the silicon single crystal ingot under the determined manufacturing conditions.

[0041] Silicon single crystal ingots can be grown by known methods such as the CZ method (Czochralski method) and the FZ method (Floating Zone method). For example, silicon single crystal ingots grown by the CZ method may be contaminated with carbon due to contaminating carbon in the raw material polysilicon, CO gas generated during growth, and the like. Evaluating the contaminating carbon concentration and determining manufacturing conditions based on the evaluation results is preferable for manufacturing silicon single crystal ingots with reduced carbon contamination. For this purpose, the carbon concentration evaluation method according to one aspect of the present invention described above is suitable as a method for evaluating the contaminating carbon concentration.

[0042] For details such as the shape of the silicon sample cut from the silicon single crystal ingot, please refer to the above description of the silicon sample to be evaluated in the carbon concentration evaluation method. The number of silicon samples subjected to carbon concentration evaluation is at least one, and may be two or more. When the carbon concentrations of two or more silicon samples are determined, for example, the average, maximum, etc. of the determined carbon concentrations can be used to determine the manufacturing conditions for the silicon single crystal ingot. For example, if the obtained carbon concentration is within a predetermined allowable level, a silicon single crystal ingot with reduced carbon contamination can be produced by growing the silicon single crystal ingot under the manufacturing conditions used to grow the silicon single crystal ingot from which the silicon sample whose carbon concentration was evaluated was cut. On the other hand, for example, if the obtained carbon concentration exceeds the allowable level, a silicon single crystal ingot with reduced carbon contamination can be produced by growing the silicon single crystal ingot under the manufacturing conditions determined by adopting a means for reducing the carbon concentration. As a means for reducing carbon contamination, for example, in the CZ method, one or more of the following means (1) to (3) can be adopted. Furthermore, for example, with respect to the FZ method, one or more of the following means (4) to (6) can be adopted. (1) Use high-grade raw polysilicon with less carbon contamination. (2) To suppress the dissolution of CO into the polysilicon melt, the pulling speed and / or the argon (Ar) gas flow rate during crystal pulling must be appropriately adjusted. (3) Making design changes or changing the mounting position of carbon components included in the lifting device. (4) Use high-grade silicon raw materials with less carbon contamination. (5) Increasing the flow rate of gas introduced into the single crystal manufacturing apparatus suppresses the intake of carbon from the ambient gas. (6) Replacing components made of carbon-containing materials contained in single crystal manufacturing equipment, changing the design of components, changing the installation position, etc.

[0043] Thus, according to one aspect of the present invention, it is possible to provide a silicon single crystal ingot and a silicon wafer having a low carbon concentration. [Example]

[0044] The present invention will be further described below based on examples. However, the present invention is not limited to the embodiments shown in the examples. The following treatments and operations were carried out in an atmospheric atmosphere at room temperature unless otherwise specified.

[0045] [Silicon sample to be evaluated] Three levels of n-type silicon single crystal wafers (referred to as "Wf1," "Wf2," and "Wf3") were prepared. The carbon concentrations of these three levels of wafers were determined by SIMS measurement (carbon concentration measurement using the raster variation method), and all were 1.3E+14 atoms / cm. 3 As is well known, "E+" indicates exponentiation. For example, "E+14" means "×10 14 " indicates.

[0046] Sample pieces (silicon samples to be measured) were cut out from each of the three types of wafers, and the following various processes were carried out.

[0047] [Example 1] A silicon sample to be measured, cut from Wf1, was subjected to the following treatments (A), (B), (C), and (D) in sequence. In step (B), a hydrogen atom introduction treatment was performed on the silicon sample after the heat treatment in step (A). In step (C), a Schottky electrode was formed on one side of the silicon sample after the hydrogen atom introduction treatment, and in step (D), an ohmic layer (Ga / In layer) was formed on the other side to fabricate a diode.

[0048] (A) The silicon sample to be evaluated is placed on a hot plate and heated at 150°C for 30 minutes. (B) Within 60 minutes after the above heat treatment, the silicon sample to be evaluated is treated with hydrofluoric acid (immersed in hydrofluoric acid (hydrofluoric acid aqueous solution) with an HF concentration of 5% by mass for 5 minutes) → rinsed with pure water → within 60 minutes after the above heat treatment, treated with hydrofluoric nitric acid (immersed in hydrofluoric nitric acid (a mixed solution of nitric acid (nitric acid aqueous solution) with an HNO3 concentration of 69% by mass and hydrofluoric acid (hydrofluoric acid aqueous solution) with an HF concentration of 50% by mass) for 5 minutes) → rinsed with pure water (C) Hydrofluoric acid treatment (immersion in hydrofluoric acid (hydrofluoric acid aqueous solution) with an HF concentration of 5% by mass for 5 minutes) → pure water washing → introduction into a vacuum deposition device where Au is placed as a deposition material and vacuum deposition is performed to form a Schottky electrode (Au electrode). (D) Formation of a backside ohmic layer (Ga / In) by rubbing in gallium and indium

[0049] Before introducing the silicon sample to be evaluated after the pure water cleaning in (C) above, Al was placed in the deposition apparatus and a deposition process (intentional Al contamination) was performed, and then Au (deposition material) was placed and a deposition process (pre-processing) was performed. The pretreatment vapor deposition process was carried out in a vapor deposition apparatus with a film thickness set to a range of 10 nm to 300 nm and a deposition rate set to a range of 1.0 Å / sec to 10.0 Å / sec. The deposition process for forming the Schottky electrode (C) was carried out by placing the silicon sample to be evaluated after washing with pure water (C) in the deposition apparatus with the Au (deposition material) still in place, setting the deposition rate at 5.0 Å / sec, and depositing for 5 to 7 minutes. The film thickness detected by the film thickness sensor in the deposition apparatus was 150 nm.

[0050] A reverse voltage to form a depletion layer and a forward voltage to capture carriers in the depletion layer were applied alternately and periodically to the Schottky electrode of the diode fabricated above. The transient response of the diode capacitance corresponding to the voltage was measured. The voltage application and capacitance measurement were performed while sweeping the sample temperature over a predetermined temperature range. The DLTS signal intensity ΔC was plotted against temperature to obtain a DLTS spectrum. The measurement frequency was 250 Hz. The obtained DLTS spectrum was subjected to fitting (true shape fitting) using a program manufactured by SEMILAB, and the DLTS spectrum having a peak between 90 and 110 K was separated. In the obtained DLTS spectrum, a trap level due to a carbon-hydrogen complex near 101 K, i.e., a peak at Ec-0.15 eV, was confirmed. The trap level density was calculated from the DLTS signal intensity at 101 K using a known relational equation. Furthermore, the carbon concentration was calculated from the trap level density using a separately prepared calibration curve.

[0051] [Comparative Example 1] The carbon concentration of the silicon sample to be measured cut out from Wf1 was determined by the method described in Example 1, except that the pretreatment before introducing the silicon sample to be evaluated after the pure water cleaning in (C) above was not performed. In Comparative Example 1, a Schottky electrode was formed without pretreatment in a vapor deposition apparatus after intentional Al contamination.

[0052] [Example 2] The carbon concentration of the silicon sample to be measured was determined by the method described in Example 1, except that the silicon sample to be measured was a silicon sample cut out from Wf2.

[0053] Comparative Example 2 The carbon concentration of the silicon sample to be measured was determined by the method described in Comparative Example 1, except that a silicon sample to be measured cut out from Wf2 was used.

[0054] [Example 3] The carbon concentration of the silicon sample to be measured was determined by the method described in Example 1, except that the silicon sample to be measured was a silicon sample cut out from Wf3.

[0055] Comparative Example 3 The carbon concentration of the silicon sample to be measured was determined by the method described in Comparative Example 1, except that a silicon sample to be measured cut out from Wf3 was used.

[0056] The carbon concentrations determined in Examples 1 to 3 and Comparative Examples 1 to 3 are shown in Table 1 and Figure 1. Figure 2 shows the DLTS spectra (after fitting processing) obtained in Example 1 and Comparative Example 1. In Figure 2, "AU" means arbitrary units.

[0057] [Table 1]

[0058] As shown in Table 1 and FIG. 1, when comparing the Examples and Comparative Examples in which wafers of the same level were evaluated, the carbon concentration determined in the Comparative Examples was higher than the carbon concentration determined in the Examples and was significantly higher than the carbon concentration determined by SIMS measurement. These results confirm that the accuracy of carbon concentration evaluation by DLTS measurement can be improved by performing deposition processing (preprocessing) using the same or similar deposition material as the deposition material for forming the Schottky electrode in the deposition equipment before forming the Schottky electrode. This is thought to be because the preprocessing suppressed Al contamination of the Schottky electrode.

[0059] From the calculation results described below, the Al content of the Schottky electrodes formed in Comparative Examples 1 to 3 was 9 μg / mm 2It can be confirmed that the Al contamination of the Schottky electrodes formed in Examples 1 to 3 was suppressed by the pretreatment compared to the Schottky electrodes formed in Comparative Examples 1 to 3. Therefore, the Al content of the Schottky electrodes formed in Examples 1 to 3 was 9 μg / mm 2 It can be said that it is less than

[0060] Table 2 shows the capacitances obtained by DLTS measurement of the diodes fabricated in Examples 1 to 3 and Comparative Examples 1 to 3.

[0061] [Table 2]

[0062] The difference in capacitance between the Example and Comparative Example, which evaluated wafers of the same standard, is believed to be due to Al contamination of the Schottky electrode formed in the Comparative Example. Since Al is presumed to be mixed into the Schottky electrode (Au electrode) in the form of Al2O3, the inventors believe that the difference in capacitance between the Example and Comparative Example, which evaluated wafers of the same standard, can be considered to be the capacitance of Al2O3 in the Schottky electrode formed in the Comparative Example. Therefore, assuming that the diodes fabricated in each comparative example had a silicon / Al2O3 / Au laminated structure (parallel plate conductors), the Al content was calculated as follows.

[0063] (1) Derivation of the volume of Al2O3 The thickness of Al2O3 was calculated from the capacitance equation of a parallel plate conductor (Equation 1 below). In calculating the thickness of Al2O3 using Equation 1, the dielectric constant of vacuum was set to 8.85E-12 F / m, and the relative dielectric constant of Al2O3 was set to 8.9 F / m. The electrode area of ​​the formed Schottky electrode was 8.0 mm 2 Therefore, the electrode area was 8.0 mm 2 The calculated thickness of Al2O3 was as follows: Comparative Example 1: 8.5E-06m Comparative Example 2: 2.1E-05m Comparative example 3: 2.5E-05m

[0064]

number

[0065] Next, the volume of Al2O3 was calculated from the thickness of Al2O3 and the electrode area of ​​the Schottky electrode using the following formula 2. The electrode area of ​​the formed Schottky electrode was 8.0 mm 2 Therefore, the electrode area of ​​Al2O3 was 8.0 mm 2 It was decided. Al2O3 volume = Al2O3 thickness × Al2O3 electrode area (Equation 2) The calculated volume of Al2O3 was as follows: Comparative Example 1: 6.8E-05cm 3 Comparative example 2: 1.7E-04cm 3 Comparative example 3: 2.0E-04cm 3

[0066] (2) Derivation of Al content per unit area The mass of Al2O3 was calculated using the following formula 3. In calculating the mass using formula 3, the density of Al2O3 was 3.95 g / cm 3 and the molecular weight of Al2O3 was set to 101.96. Mass of Al2O3 = Volume of Al2O3 × Density of Al2O3 × Molecular weight of Al2O3 (Equation 3) The calculated mass of Al2O3 was as follows: Comparative Example 1: 0.07 mg Comparative example 2: 0.17mg Comparative example 3: 0.21 mg

[0067] Next, the mass of Al was calculated by the following formula 4. In calculating the mass of Al, the molecular weight of Al2O3 was set to 101.96, and the atomic weight of Al was set to 26.98. Mass of Al = atomic weight of Al / molecular weight of Al2O3 (Equation 4)

[0068] The mass of Al calculated above was divided by the electrode area (8.0 mm 2 ) to calculate the Al content per unit area of ​​the Schottky electrode for each of Comparative Examples 1 to 3. The calculated Al contents were as follows. Comparative example 1: 9μg / mm 2 Comparative example 2: 21μg / mm 2 Comparative example 3: 26μg / mm 2

[0069] It is known that the carbon concentration of silicon wafers adversely affects the switching characteristics of some insulated gate bipolar transistors (IGBTs). Therefore, reducing and managing carbon contamination in silicon wafers is required to improve the switching characteristics of IGBTs. To reduce carbon contamination, it is desirable to evaluate the carbon concentration of silicon samples and, based on the evaluation results, manage the silicon wafer manufacturing process and / or the manufacturing process of the silicon single crystal ingots from which silicon wafers are cut to reduce carbon contamination during the manufacturing process. Wafers whose carbon concentrations have been evaluated using a carbon concentration evaluation method according to one embodiment of the present invention, for example, wafers whose carbon concentrations are found to be low by evaluation, can contribute to improving the characteristics of IGBTs. IGBTs are used in industrial fields for control systems for industrial equipment, automobiles, and the like. Because they can convert and control power with high efficiency and low power consumption, they can lead to energy efficiency and energy conservation, fostering innovative companies and promoting industrial development.

Claims

1. performing a hydrogen atom introduction process for introducing hydrogen atoms into the silicon sample; forming a Schottky electrode on one surface of the silicon sample after the hydrogen atom introduction treatment and an ohmic layer on the other surface to fabricate a diode; performing DLTS measurements on the diode; and Evaluating the carbon concentration of the silicon sample based on the measurement results obtained by the DLTS measurement; Including, the measurement results include a measurement result regarding a density of trap levels caused by complexes formed by at least carbon atoms and hydrogen atoms, The formation of the Schottky electrode is carried out by introducing the silicon sample after the hydrogen atom introduction treatment into a deposition apparatus and performing a deposition treatment using a deposition material for forming a Schottky electrode; and the method for evaluating the carbon concentration of a silicon sample further includes, before introducing the silicon sample after the hydrogen atom introduction treatment, performing a vapor deposition process using a pretreatment vapor deposition material that is the same vapor deposition material as the Schottky electrode formation vapor deposition material or a vapor deposition material of the same type in the vapor deposition device, thereby depositing the pretreatment vapor deposition material in at least a part of the vapor deposition device.

2. 2. The method for evaluating a carbon concentration in a silicon sample according to claim 1, wherein the silicon sample is n-type silicon, and the Schottky electrode is an Au electrode.

3. The metal impurity content of the Au electrode is 9 μg / mm ２ The method for evaluating the carbon concentration of a silicon sample according to claim 2, wherein the carbon concentration is less than 1000 ppm.

4. 4. The method for evaluating the carbon concentration of a silicon sample according to claim 3, wherein the metal impurity is Al.

5. 5. The method for evaluating the carbon concentration of a silicon sample according to claim 4, wherein the vapor deposition apparatus in which the vapor deposition process for depositing the pretreatment vapor deposition material is performed is a vapor deposition apparatus in which an Al-containing vapor deposition material has been placed and a vapor deposition process has been performed.

6. 2. The method for evaluating a carbon concentration in a silicon sample according to claim 1, wherein a deposition processing time for forming the Schottky electrode is 4 minutes or more and 10 minutes or less.

7. 2. The method for evaluating a carbon concentration in a silicon sample according to claim 1, wherein the measurement result regarding the density of trap levels caused by complexes formed of at least carbon atoms and hydrogen atoms is a measurement result regarding the density of at least one trap level selected from the group consisting of Ec-0.10 eV, Ec-0.13 eV, and Ec-0.15 eV.

8. 2. The method for evaluating a carbon concentration in a silicon sample according to claim 1, wherein the measurement result regarding the density of trap levels caused by complexes formed of at least carbon atoms and hydrogen atoms is a measurement result regarding the density of trap levels at Ec-0.15 eV.

9. 2. The method for evaluating a carbon concentration in a silicon sample according to claim 1, wherein the hydrogen atom introduction treatment includes contacting the silicon sample with nitric acid and hydrofluoric acid.

10. Evaluating the carbon concentration of a silicon wafer manufactured in a silicon wafer manufacturing process to be evaluated by the method according to any one of claims 1 to 9; and Evaluating the degree of carbon contamination in the silicon wafer manufacturing process to be evaluated based on the results of the evaluation; A method for evaluating a silicon wafer manufacturing process, comprising:

11. Evaluating a silicon wafer manufacturing process by the evaluation method according to claim 10; and manufacturing silicon wafers in a silicon wafer manufacturing process in which the degree of carbon contamination has been determined to be at an acceptable level as a result of the evaluation, or in a silicon wafer manufacturing process in which the degree of carbon contamination has been determined to exceed the acceptable level as a result of the evaluation, after performing a carbon contamination reduction treatment on the silicon wafer manufacturing process; A method for manufacturing a silicon wafer, comprising:

12. growing a silicon single crystal ingot; Evaluating the carbon concentration of a silicon sample cut out from the silicon single crystal ingot by the method according to any one of claims 1 to 9; Determining the manufacturing conditions of a silicon single crystal ingot based on the results of the evaluation; and growing a silicon single crystal ingot under determined manufacturing conditions; A method for producing a silicon single crystal ingot, comprising:

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