Photosensitive resin composition, photosensitive resin film, photosensitive dry film, pattern forming method, display device, and micro-led display
A photosensitive resin composition with specific components addresses blue light transmission issues in micro LED displays by selectively absorbing blue light and transmitting red or green light, enhancing display clarity and color representation.
Patent Information
- Application Number
- JP2024067918
- Authority / Receiving Office
- JP · JP
- Patent Type
- Applications
- Current Assignee / Owner
- Filing Date
- 2024-04-19
- Publication Date
- 2025-10-30
AI Technical Summary
Existing micro LED displays face issues with clarity due to blue light transmission through quantum dot-containing photoresist cured films, which hinders full color representation, as blue light not converted by quantum dots passes through and emerges to the surface.
A photosensitive resin composition comprising an acrylic resin with a (meth)acryloyl group, a dye with a specific absorption wavelength, an oxime-based photoradical generator, a surfactant, and a solvent, which forms a coating that selectively absorbs blue light and allows transmission of red or green light, enhancing lithography resolution and blue light absorption properties.
The composition enables the formation of a coating that effectively absorbs blue light not converted by quantum dots, allowing only red or green light to be extracted, thereby improving the clarity and color representation in micro LED displays.
Smart Images

Figure 2025164121000001_ABST
Abstract
Description
[Technical Field]
[0001] The present invention relates to a photosensitive resin composition, a photosensitive resin film, a photosensitive dry film, a pattern forming method, a display device, and a micro LED display. [Background technology]
[0002] Various methods have been proposed to create displays with red, green, and blue subpixels. One method involves converting light from an LED array from shorter wavelength blue light to longer wavelength red and green light through a color conversion structure. Quantum dots are used to perform this color conversion.
[0003] In recent years, these LED arrays have become micro-sized, and micro LED displays using them have attracted attention. One method for forming a color conversion structure on an LED array is a lithography process using a photosensitive material (Patent Document 1). However, if the transmittance of the exposure wavelength during the lithography process to form a pattern is ensured, when blue LED light is irradiated from below onto the cured film, the blue light that is not color-converted by the quantum dots passes through and emerges to the surface, resulting in a lack of clarity in the display (this is because the absorbance of quantum dots is generally greater than the exposure wavelength during the lithography process, which is greater than the blue LED light wavelength). [Prior art documents] [Patent documents]
[0004] [Patent Document 1] Patent Publication No. 2021-089347 Summary of the Invention [Problem to be solved by the invention]
[0005] A subpixel with a red-emitting quantum dot-containing photoresist cured film laminated on a blue LED, a subpixel with a green-emitting quantum dot-containing photoresist cured film laminated on a blue LED, and a subpixel consisting of a blue LED without these laminated films form the three primary colors and represent a full color as a single pixel. However, if the quantum dot-containing photoresist cured film transmits blue light, it becomes difficult to represent a full color. To solve this, it is necessary to develop a material that can form a blue light absorption layer selectively only on the red-emitting quantum dot-containing photoresist cured film and the green-emitting quantum dot-containing photoresist cured film (because if the quantum dot-containing photoresist cured film is laminated on a subpixel consisting of a blue LED without a laminated quantum dot-containing photoresist, the blue light cannot be extracted).
[0006] The present invention has been made in view of the above circumstances, and aims to provide a photosensitive resin composition that can easily form a coating having high lithography resolution and good blue light absorption properties, a photosensitive resin film and a photosensitive dry film obtained using the photosensitive resin composition, a pattern formation method using these, and a display device obtained using the photosensitive resin composition. [Means for solving the problem]
[0007] In order to solve the above problems, the present invention provides: A photosensitive resin composition for absorbing blue LED light transmitted through a quantum dot-containing cured photoresist film capable of emitting red or green fluorescence, comprising: (A) an acrylic resin having a (meth)acryloyl group in a side chain; (B) a dye having an absorption maximum wavelength in the range of 490 to 430 nm; (C) an oxime-based photoradical generator, (D) a surfactant, and (E) Solvent The present invention provides a photosensitive resin composition comprising:
[0008] Such a photosensitive resin composition can easily form a coating film having high lithography resolution and good blue light absorption properties.
[0009] The component (A) is preferably an alkali-insoluble resin having a weight average molecular weight Mw of 10,000 to 50,000, a double bond equivalent of ≦300 g / mol, and an acid value of ≦10 mgKOH / g.
[0010] If the weight average molecular weight of the (A) acrylic resin having a (meth)acryloyl group in the side chain is within the above range, the film thickness of the exposed area is less likely to decrease during development, and the solubility of the unexposed area is good.
[0011] The photosensitive resin composition preferably contains the component (B) in an amount of 0.5 to 15% by mass of the nonvolatile components.
[0012] If the dye content is within the above range, fine patterns can be formed while maintaining good absorption characteristics of blue LED light.
[0013] It is also preferred that the composition gives a cured film having a thickness of 1 to 10 μm and a transmittance of 2% or less at wavelengths of 450 to 470 nm, 80% or more at wavelengths of 515 to 535 nm, and 80% or more at wavelengths of 620 to 640 nm.
[0014] Such a material allows sufficient transmission of red and green light while exhibiting good absorption characteristics for blue light.
[0015] The present invention also provides a photosensitive resin film which is a dried product of the above photosensitive resin composition.
[0016] The photosensitive resin film of the present invention can be used to produce a photosensitive dry film.
[0017] The present invention also provides a photosensitive dry film comprising a support film and the above-described photosensitive resin film formed on the support film.
[0018] The photosensitive dry film of the present invention can easily form a coating having high lithography resolution and good blue light absorption properties.
[0019] Further, the present invention provides a pattern forming method, comprising the steps of: (i) applying the photosensitive resin composition onto a substrate having a pattern formed with a quantum dot-containing photoresist capable of emitting red or green fluorescence, to form a photosensitive resin film on the substrate; (ii) exposing the photosensitive resin film to light; and (iii) developing the exposed photosensitive resin film with a developer to dissolve and remove the unexposed areas, thereby forming a pattern with a film thickness of 1 to 10 μm on the quantum dot-containing photoresist; The present invention provides a pattern formation method comprising the steps of:
[0020] The photosensitive resin composition of the present invention can be used to form a pattern of a desired shape.
[0021] It is also preferable not to perform post-baking after the step (ii).
[0022] In this way, the underlying quantum dot-containing photoresist cured film is not subjected to unnecessary heat history.
[0023] Further, the present invention provides a pattern forming method, comprising the steps of: (i') a step of attaching the photosensitive resin coating of the photosensitive dry film to a substrate having a pattern formed with a quantum dot-containing photoresist capable of emitting red or green fluorescence, thereby forming the photosensitive resin coating on the substrate; (ii') exposing the photosensitive resin film to light; and (iii') A step of developing the exposed photosensitive resin film with a developer to dissolve and remove the unexposed areas, thereby forming a pattern with a film thickness of 1 to 10 μm on the quantum dot-containing photoresist. The present invention provides a pattern formation method comprising the steps of:
[0024] The photosensitive dry film of the present invention can be used to form a pattern of a desired shape.
[0025] It is also preferable not to perform post-baking after the step (ii').
[0026] In this way, the underlying quantum dot-containing photoresist cured film is not subjected to unnecessary heat history.
[0027] The present invention also provides a display device comprising a blue LED, a pattern formed of a quantum dot-containing photoresist capable of emitting red or green fluorescence and provided on the blue LED, and a pattern consisting of a cured film of the above-mentioned photosensitive resin composition provided on the pattern, wherein the cured film absorbs blue LED light that has not been color-converted by the quantum dots, and only light converted to red or green is extracted from each subpixel.
[0028] The photosensitive resin composition of the present invention can be particularly suitably used for such applications.
[0029] In addition, the present invention provides a light-emitting device comprising a blue LED, a pattern formed of a quantum dot-containing photoresist capable of emitting red or green fluorescence and provided on the blue LED, and a pattern formed of a cured film of the above-mentioned photosensitive resin composition provided on the pattern, wherein the size of the pattern formed of the cured film is 0.01 mm 2 The present invention provides a micro LED display in which the cured coating absorbs blue LED light that has not been color-converted by the quantum dots, and only light that has been converted to red or green is extracted from each subpixel.
[0030] The photosensitive resin composition of the present invention can be particularly suitably used for such applications.
[0031] The present invention also provides a laminate comprising a quantum dot-containing photoresist capable of emitting red or green fluorescence and a cured film of the above-described photosensitive resin composition formed on the quantum dot-containing photoresist.
[0032] The laminate of the present invention can be suitably used in the manufacture of display devices and micro LED displays. [Effects of the Invention]
[0033] The photosensitive resin composition of the present invention can be used to easily form a fine, vertically-oriented pattern on a quantum dot-containing cured photoresist film by the pattern formation method of the present invention. Furthermore, the resulting cured film can absorb blue light that has passed through the quantum dot-containing cured photoresist film and selectively extract only red or green light, making it suitable for use in display devices such as micro LED displays. [Brief explanation of the drawings]
[0034] [Figure 1] FIG. 1 is a schematic diagram illustrating an example of the use and function of the photosensitive resin composition of the present invention. DETAILED DESCRIPTION OF THE INVENTION
[0035] As described above, there has been a demand for the development of a photosensitive resin composition that can easily form a coating having high lithography resolution and good blue light absorption properties, a photosensitive resin film and a photosensitive dry film obtained using the photosensitive resin composition, a pattern formation method using these, and a display device obtained using the photosensitive resin composition.
[0036] As a result of extensive research into achieving the above object, the present inventors have found that the above object can be achieved by a photosensitive resin composition containing specific components, and have thus completed the present invention.
[0037] That is, the present invention provides a photosensitive resin composition for absorbing blue LED light transmitted through a quantum dot-containing photoresist cured film capable of emitting red or green fluorescence, the photosensitive resin composition comprising: (A) an acrylic resin having a (meth)acryloyl group on the side chain; (B) a dye having an absorption maximum wavelength in the range of 490 to 430 nm; (C) an oxime-based photoradical generator; (D) a surfactant; and (E) a solvent.
[0038] The present invention will be described in detail below, but the present invention is not limited thereto.
[0039] [Photosensitive resin composition] The photosensitive resin composition of the present invention is a photosensitive resin composition for absorbing blue LED light transmitted through a quantum dot-containing cured photoresist film capable of emitting red or green fluorescence, and comprises (A) an acrylic resin having a (meth)acryloyl group on the side chain, (B) a dye having an absorption maximum wavelength in the range of 490 to 430 nm, (C) an oxime-based photoradical generator, (D) a surfactant, and (E) a solvent.
[0040] An example of the use and function of the photosensitive resin composition of the present invention will be described with reference to FIG. 1. As shown in FIG. 1, a quantum dot-containing photoresist cured film 2 is placed on a blue LED 3, and a cured film 1 of the photosensitive resin composition of the present invention is placed on top of that. Blue LED light 10 emitted from the blue LED 3 is converted into red fluorescence 20 by the quantum dots in the quantum dot-containing photoresist cured film 2. The red fluorescence 20 then passes through the cured film 1 of the photosensitive resin composition of the present invention and is emitted from the surface. Meanwhile, blue LED light 30 (a portion of the blue LED light 10) that has not been color-converted by the quantum dots is absorbed by a dye (B) in the cured film 1 of the photosensitive resin composition of the present invention, which has an absorption maximum wavelength in the range of 490 to 430 nm. In other words, the cured film 1 of the photosensitive resin composition of the present invention cuts out the remaining blue LED light that has not been color-converted, thereby enabling the selective and efficient extraction of red light. Note that while the above description focuses on the selective extraction of red light, the same applies to green light.
[0041] The photosensitive resin composition of the present invention preferably provides a cured film having a thickness of 1 to 10 μm, which has a transmittance of 2% or less at wavelengths of 450 to 470 nm, a transmittance of 80% or more at wavelengths of 515 to 535 nm, and a transmittance of 80% or more at wavelengths of 620 to 640 nm. Alternatively, the photosensitive resin composition of the present invention preferably provides a cured film having a thickness of 1 to 10 μm, which has a transmittance of 2% or less at at least a portion of wavelengths of 450 to 470 nm, a transmittance of 80% or more at at least a portion of wavelengths of 515 to 535 nm, and a transmittance of 80% or more at at least a portion of wavelengths of 620 to 640 nm. Such a composition exhibits good blue light absorption characteristics while adequately transmitting red and green light.
[0042] [(A) Acrylic resin having a (meth)acryloyl group in the side chain] The acrylic resin (acrylic acid ester or methacrylic acid ester polymer) (A) having a (meth)acryloyl group on the side chain used in the present invention is not particularly limited.
[0043] In the present invention, the weight-average molecular weight Mw of the (A) acrylic resin having a (meth)acryloyl group on the side chain is preferably in the range of 10,000 to 50,000, more preferably 15,000 to 40,000. When the weight-average molecular weight Mw of the (A) acrylic resin having a (meth)acryloyl group on the side chain is within this range, film thickness reduction in the exposed area is unlikely to occur during development, and the solubility of the unexposed area in organic solvents is good. The weight-average molecular weight is a value determined as a weight-average molecular weight (weight-average degree of polymerization) converted into polystyrene by GPC (gel permeation chromatography) analysis using toluene as a developing solvent.
[0044] In the present invention, the acrylic resin (A) having a (meth)acryloyl group in a side chain preferably has a double bond equivalent in the range of ≦300 g / mol, more preferably ≦280 g / mol. The double bond equivalent is the weight of the resin per acrylic group. If the double bond equivalent of the acrylic resin (A) having a (meth)acryloyl group in a side chain is within the above range, it is possible to form a pattern with a high crosslink density, high sensitivity, and good shape after development.
[0045] In the present invention, the acrylic resin (A) having a (meth)acryloyl group in a side chain is preferably an alkali-insoluble resin having an acid value of ≦10 mgKOH / g. When the alkali-insoluble resin has an acid value of ≦10 mgKOH / g, it contains almost no acid groups, so post-baking to destroy these acid groups is not required, and the underlying quantum dot-containing photoresist cured film is not subjected to unnecessary heat history.
[0046] In the present invention, the (A) acrylic resin having a (meth)acryloyl group in the side chain may be used alone or in combination of two or more. The (A) acrylic resin having a (meth)acryloyl group in the side chain preferably accounts for 40 to 99% by mass, more preferably 50 to 98% by mass, of the non-volatile components of the photosensitive resin composition.
[0047] (A) Examples of acrylic resins having a (meth)acryloyl group in the side chain include those manufactured by Negami Chemical Industries Co., Ltd. under the trade name "RA-3631P" and those manufactured by Taisei Fine Chemical Co., Ltd. under the trade name "8KQ-7060".
[0048] [(B) Dye] The dye (B) used in the present invention is not particularly limited as long as it has an absorption maximum wavelength in the range of 490 to 430 nm, but it is preferable that the dye has good solubility or dispersibility in the solvent (E) or the acrylic resin (A) having a (meth)acryloyl group in the side chain.
[0049] The maximum absorption wavelength is determined as follows. First, in UV-Vis (ultraviolet-visible) absorption measurement, a sample is irradiated with ultraviolet or visible light, and the amount of light absorbed by the sample (absorbance) is measured while the irradiated wavelength is continuously scanned. The measurement results are obtained as a graph (absorption spectrum) with wavelength on the horizontal axis and absorbance on the vertical axis, and the wavelength at the maximum value of the spectrum is defined as the maximum absorption wavelength.
[0050] Such dyes may be commercially available products, such as FDB-002 (maximum absorption wavelength: 431 nm), FDB-003 (maximum absorption wavelength: 438 nm), FDB-004 (maximum absorption wavelength: 445 nm), FDB-005 (maximum absorption wavelength: 452 nm), and FDB-006 (maximum absorption wavelength: 473 nm), all manufactured by Yamada Chemical Co., Ltd.; FS Yellow 1017 (maximum absorption wavelength: 443 nm), all manufactured by Arimoto Chemical Industry Co., Ltd.; and Dye 3 (maximum absorption wavelength: 464 nm) and Dye 4 (maximum absorption wavelength: 479 nm), all manufactured by Hayashibara Corporation.
[0051] The content of the dye (B) used in the present invention is preferably 0.5 to 15 mass %, more preferably 1 to 10 mass %, of the non-volatile components of the photosensitive resin composition. If the content of the dye is within the above range, fine patterns can be formed while maintaining good absorption properties of blue LED light.
[0052] [(C) Oxime-based photoradical generators] The oxime-based photoradical generator used in the present invention is not particularly limited as long as it is an oxime compound that can improve sensitivity during lithography.
[0053] Examples of the oxime compound include N-benzoyloxy-1-(4-phenylsulfanylphenyl)butan-1-one-2-imine, N-benzoyloxy-1-(4-phenylsulfanylphenyl)octan-1-one-2-imine, N-benzoyloxy-1-(4-phenylsulfanylphenyl)-3-cyclopentylpropan-1-one-2-imine, N-acetoxy-1-[9-ethyl-6-(2-methylbenzoyl)-9H-carbazol-3-yl]ethan-1-imine, N-acetoxy-1-[9- Examples of suitable compounds include ethyl-6-{2-methyl-4-(3,3-dimethyl-2,4-dioxacyclopentanylmethyloxy)benzoyl}-9H-carbazol-3-yl]ethan-1-imine, N-acetoxy-1-[9-ethyl-6-(2-methylbenzoyl)-9H-carbazol-3-yl]-3-cyclopentylpropan-1-imine, and N-benzoyloxy-1-[9-ethyl-6-(2-methylbenzoyl)-9H-carbazol-3-yl]-3-cyclopentylpropan-1-one-2-imine. Commercially available products such as Irgacure OXE01 and OXE02 (manufactured by BASF) and Adeka Arcles NCI-930 and NCI-730 (manufactured by ADEKA Corporation) may also be used.
[0054] The content of the oxime-based photoradical generator (C) used in the present invention is preferably 0.1 to 10 mass %, more preferably 0.5 to 7 mass %, of the non-volatile components of the photosensitive resin composition. When the content of the oxime-based photoradical generator is within the above range, fine patterns can be formed while maintaining good light-emitting properties.
[0055] [(D) Surfactant] The surfactant (D) used in the present invention is not particularly limited as long as it can improve the coatability, but silicone surfactants are preferred.
[0056] Examples of silicone surfactants include surfactants having a siloxane bond in the molecule, such as Toray Silicone DC3PA, SH7PA, DC11PA, SH21PA, SH28PA, SH29PA, SH30PA, and SH8400 (trade names: manufactured by Dow Corning Toray Co., Ltd.), KP321, KP322, KP323, KP324, KP326, KP340, and KP341 (manufactured by Shin-Etsu Chemical Co., Ltd.), and TSF400, TSF401, TSF410, TSF4300, TSF4440, TSF4445, TSF4446, TSF4452, and TSF4460 (manufactured by Momentive Performance Materials Japan, LLC).
[0057] The content of the surfactant (D) used in the present invention is preferably 0.001 to 0.7% by mass, more preferably 0.005 to 0.5% by mass, of the non-volatile components of the photosensitive resin composition. If the surfactant content is within the above range, a film with high flatness can be formed.
[0058] [(E) Solvent] The solvent (E) used in the present invention is not particularly limited as long as it can dissolve and disperse the above-mentioned components (A) to (D) and, if included, other various additives.
[0059] The (E) solvent is preferably an organic solvent, for example, ketones such as cyclohexanone, cyclopentanone, and methyl-2-n-pentyl ketone; alcohols such as 3-methoxybutanol, 3-methyl-3-methoxybutanol, 1-methoxy-2-propanol, and 1-ethoxy-2-propanol; ethers such as propylene glycol monomethyl ether, ethylene glycol monomethyl ether, propylene glycol monoethyl ether, ethylene glycol monoethyl ether, propylene glycol dimethyl ether, and diethylene glycol dimethyl ether; and esters such as propylene glycol monomethyl ether acetate, propylene glycol monoethyl ether acetate, ethyl lactate, ethyl pyruvate, butyl acetate, methyl 3-methoxypropionate, ethyl 3-ethoxypropionate, tert-butyl acetate, tert-butyl propionate, propylene glycol mono-tert-butyl ether acetate, and γ-butyrolactone. These may be used alone or in combination of two or more.
[0060] As the (E) solvent, propylene glycol monomethyl ether acetate, propylene glycol monomethyl ether, cyclopentanone, and mixed solvents thereof are preferred, as they have excellent solubility for the (A) acrylic resin having a (meth)acryloyl group on the side chain.
[0061] From the viewpoint of compatibility and viscosity of the photosensitive resin composition, the content of the component (E) is preferably 25 to 85 mass %, more preferably 35 to 75 mass %, based on the total amount of the photosensitive resin composition.
[0062] [Other additives] The photosensitive resin composition of the present invention may contain other additives in addition to the above-mentioned components, such as a photopolymerizable compound such as a polyfunctional (meth)acrylate, for the purpose of increasing the crosslinking density and forming a pattern with a good shape after development.
[0063] [Silane coupling agents] The photosensitive resin composition of the present invention is preferably, but not limited to, free of a silane coupling agent. Without the addition of a silane coupling agent, the viscosity of the photosensitive resin composition increases over time, further reducing the risk of deterioration in storage stability. The reason for this increase in viscosity over time is not fully understood, but it is thought to be due to crosslinking of hydroxyl groups in the side chains of the acrylic resin.
[0064] [Photosensitive resin film] The photosensitive resin film of the present invention is a dried product of the above-mentioned photosensitive resin composition.
[0065] [Pattern Forming Method Using Photosensitive Resin Composition] The pattern forming method using the photosensitive resin composition of the present invention is (i) applying the photosensitive resin composition onto a substrate having a pattern formed with a quantum dot-containing photoresist capable of emitting red or green fluorescence, to form a photosensitive resin film on the substrate; (ii) exposing the photosensitive resin film to light; and (iii) developing the exposed photosensitive resin film with a developer to dissolve and remove the unexposed areas, thereby forming a pattern with a film thickness of 1 to 10 μm on the quantum dot-containing photoresist; Includes.
[0066] It is also preferable not to perform post-baking after the step (ii).
[0067] In step (i), the photosensitive resin composition is applied to a substrate having a pattern formed with a quantum dot-containing photoresist capable of emitting red or green fluorescence, to form a photosensitive resin film on the substrate. The photosensitive resin film is a dried product of the photosensitive resin composition.
[0068] The coating method may be a known method, such as dipping, spin coating, roll coating, etc. The coating amount can be appropriately selected depending on the purpose.
[0069] Here, in order to efficiently carry out the photocuring reaction, the solvent and the like may be evaporated in advance by preheating (prebaking) as necessary. Prebaking can be carried out, for example, at 60 to 120°C for about 1 minute to 1 hour.
[0070] Next, in step (ii), the photosensitive resin film is exposed to light. The exposure is preferably carried out with light having a wavelength of 10 to 600 nm, more preferably with light having a wavelength of 190 to 500 nm. Examples of light having such wavelengths include light of various wavelengths generated by a radiation generator, such as ultraviolet light such as g-line, h-line, and i-line, and far ultraviolet light (248 nm, 193 nm). Of these, light having a wavelength of 248 to 436 nm is particularly preferred. The exposure dose is 10 to 10,000 mJ / cm. 2 is preferred.
[0071] The exposure may be performed through a photomask. The photomask may be, for example, a photomask having a desired pattern cut out therein. The material of the photomask is not particularly limited, but is preferably one that blocks light of the wavelengths described above. For example, a photomask having a chromium light-shielding film is preferably used, but is not limited thereto.
[0072] Next, in step (iii), after exposure, the film is developed with a developer to form a pattern. Preferred examples of the developer include organic solvents such as alcohols such as IPA, ketones such as cyclohexanone, and glycols such as propylene glycol monomethyl ether. Examples of development methods include conventional methods, such as a dip method in which a patterned substrate is immersed in a developer, a paddle method in which the developer is dispensed with a paddle, and a spray method in which the developer is applied with a spray. By developing in this manner, the unexposed areas are dissolved and removed, forming a pattern. Thereafter, washing, rinsing, drying, etc. are performed as necessary to obtain a cured film having the desired pattern.
[0073] [Photosensitive dry film] The photosensitive dry film of the present invention comprises a support film and a photosensitive resin coating obtained from a photosensitive resin composition formed on the support film.
[0074] The photosensitive dry film (support film and photosensitive resin film) is solid, and since the photosensitive resin film does not contain a solvent, there is no risk of bubbles caused by the evaporation remaining inside the photosensitive resin film or between it and the uneven substrate.
[0075] Furthermore, at high temperatures, the viscosity and fluidity of the photosensitive resin film are closely related, and the photosensitive resin film can exhibit appropriate fluidity within an appropriate viscosity range, allowing it to penetrate deep into narrow gaps and strengthen adhesion to the substrate by softening the resin. Therefore, from the viewpoint of the fluidity of the photosensitive resin film, the viscosity of the photosensitive resin film at high temperatures is preferably 10 to 5,000 Pa·s, and more preferably 30 to 2,000 Pa·s, at 80°C. In the present invention, the viscosity is measured using a rotational viscometer.
[0076] When the photosensitive dry film of the present invention is adhered to a substrate having an uneven surface, the photosensitive resin film conforms to the uneven surface to achieve high flatness. In particular, the photosensitive resin composition of the present invention has softening properties, which allows for even higher flatness. Furthermore, when the photosensitive resin film is adhered to the substrate in a vacuum environment, the occurrence of gaps can be more effectively prevented.
[0077] The photosensitive dry film of the present invention can be produced by applying the photosensitive resin composition to a support film and drying it to form a photosensitive resin film. A film coater typically used for producing adhesive products can be used as the photosensitive dry film production equipment. Examples of the film coater include a comma coater, a comma reverse coater, a multicoater, a die coater, a lip coater, a lip reverse coater, a direct gravure coater, an offset gravure coater, a three-roll bottom reverse coater, and a four-roll bottom reverse coater.
[0078] A photosensitive dry film can be produced by applying the photosensitive resin composition to a predetermined thickness onto a support film as it is unwound from the unwinding shaft of the film coater and passed through the coater head of the film coater. The film is then passed through a hot air circulating oven at a predetermined temperature and time, and dried on the support film to form a photosensitive resin film. If necessary, the photosensitive dry film can be passed through a laminating roll at a predetermined pressure together with a protective film unwound from another unwinding shaft of the film coater to bond the photosensitive resin film on the support film to the protective film. The photosensitive dry film with a protective film can then be produced by winding the film onto the winding shaft of the film coater. In this case, the temperature is preferably 50 to 120°C, the time is preferably 1 to 100 minutes, and the pressure is preferably 0.01 to 5 MPa.
[0079] The support film used in the photosensitive dry film of the present invention may be a single-layer film consisting of a single film or a multilayer film consisting of multiple laminated films. Examples of materials for the film include synthetic resin films such as polyethylene, polypropylene, polycarbonate, and polyethylene terephthalate. Among these, polyethylene terephthalate is preferred, as it has moderate flexibility, mechanical strength, and heat resistance. These films may also be subjected to various treatments such as corona treatment or release agent coating. Commercially available products are available, such as Cerapeel WZ (RX) and Cerapeel BX8 (R) (manufactured by Toray Advanced Film Co., Ltd.), E7302 and E7304 (manufactured by Toyobo Co., Ltd.), Purex G31 and Purex G71T1 (manufactured by Teijin DuPont Films Co., Ltd.), PET38x1-A3, PET38x1-V8, and PET38x1-X08 (manufactured by Nippa Corporation).
[0080] The protective film may be the same as the support film described above, but polyethylene terephthalate and polyethylene, which have appropriate flexibility, are preferred. Commercially available products can be used for these, and examples of polyethylene terephthalate include those already exemplified, and examples of polyethylene include GF-8 (manufactured by Tamapoly Corporation) and PE Film 0 Type (manufactured by Nippa Corporation).
[0081] The thickness of each of the support film and the protective film is preferably 10 to 100 μm, more preferably 25 to 50 μm, from the viewpoints of stability in the production of the photosensitive dry film and prevention of curling around the core.
[0082] [Pattern formation method using photosensitive dry film] The pattern forming method using the photosensitive dry film of the present invention comprises the steps of: (i') a step of attaching the photosensitive resin coating of the photosensitive dry film to a substrate having a pattern formed with a quantum dot-containing photoresist capable of emitting red or green fluorescence, thereby forming the photosensitive resin coating on the substrate; (ii') exposing the photosensitive resin film to light; and (iii') A step of developing the exposed photosensitive resin film with a developer to dissolve and remove the unexposed areas, thereby forming a pattern with a film thickness of 1 to 10 μm on the quantum dot-containing photoresist. Includes.
[0083] It is also preferable not to perform post-baking after the step (ii').
[0084] First, in step (i'), a photosensitive dry film is used to bond the photosensitive resin film to a substrate having a pattern formed with a quantum dot-containing photoresist capable of emitting red or green fluorescence, thereby forming a photosensitive resin film on the substrate. That is, the photosensitive resin film of the photosensitive dry film is bonded to the substrate, thereby forming a photosensitive resin film on the substrate. Furthermore, if the photosensitive dry film has a protective film, the protective film is peeled off from the photosensitive dry film, and then the photosensitive resin film of the photosensitive dry film is bonded to the substrate. The bonding can be performed, for example, using a film bonding device.
[0085] The film laminating device is preferably a vacuum laminator. For example, the protective film of the photosensitive dry film is peeled off, and the exposed photosensitive resin film is adhered to the substrate on a table at a predetermined temperature using a laminating roll at a predetermined pressure in a vacuum chamber at a predetermined vacuum level. The temperature is preferably 60 to 120°C, the pressure is preferably 0 to 5.0 MPa, and the vacuum level is preferably 50 to 500 Pa.
[0086] In order to efficiently carry out the photocuring reaction of the photosensitive resin film and to improve the adhesion between the photosensitive resin film and the substrate, pre-baking may be carried out as necessary. Pre-baking can be carried out, for example, at 60 to 120°C for about 1 minute to 1 hour.
[0087] As in the case of the pattern formation method using the photosensitive resin composition, the photosensitive resin film attached to the substrate can be patterned by undergoing the steps of (ii') exposing the photosensitive resin film to light and (iii') developing the exposed photosensitive resin film with a developer to dissolve and remove the unexposed areas to form a pattern. Note that the support film of the photosensitive dry film is peeled off before the development step depending on the process.
[0088] By using the photosensitive resin composition and dry film of the present invention, a pattern can be easily and selectively formed on a pattern formed with a quantum dot-containing photoresist capable of emitting red or green fluorescence.
[0089] [Display devices and micro LED displays] The present invention also provides a display device comprising a blue LED, a pattern formed of a quantum dot-containing photoresist capable of emitting red or green fluorescence and provided on the blue LED, and a pattern consisting of a cured film of the above-mentioned photosensitive resin composition provided on the pattern, wherein the cured film absorbs blue LED light that has not been color-converted by the quantum dots, and only light converted to red or green is extracted from each subpixel.
[0090] The resist for forming the hardened coating can be selected from known negative or positive resists, preferably negative resists. For example, the composition described in JP-A-2021-089347 is preferred.
[0091] Furthermore, the present invention provides a method for manufacturing a photosensitive resin composition comprising: a blue LED; a pattern formed on the blue LED using a quantum dot-containing photoresist capable of emitting red or green fluorescence; and a pattern formed on the pattern using a cured film of the photosensitive resin composition, the pattern having a size of 0.01 mm. 2 The present invention provides a micro LED display in which the cured coating absorbs blue LED light that has not been color-converted by the quantum dots, and only light that has been converted to red or green is extracted from each subpixel.
[0092] The display device of the present invention is a display device such as a micro LED display, characterized in that the cured film obtained by the above-mentioned pattern formation method absorbs blue LED light that has not been color-converted by quantum dots, and extracts only light converted to red or green from each subpixel. The present invention is also applicable to mini LEDs.
[0093] [Laminate] The present invention also provides a laminate comprising a quantum dot-containing photoresist capable of emitting red or green fluorescence and a cured film of the photosensitive resin composition formed on the quantum dot-containing photoresist. The laminate of the present invention can be suitably used in the manufacture of display devices and micro LED displays. [Example]
[0094] The present invention will be described in more detail below with reference to examples and comparative examples, but the present invention is not limited to the following examples.
[0095] [1] Preparation of photosensitive resin composition and its evaluation [Examples 1 to 6 and Comparative Examples 1 to 12] Each component was blended according to the blending amounts shown in Tables 1 to 3, then stirred and mixed at room temperature, and microfiltered through a 1.0 μm glass filter to obtain photosensitive resin compositions (PGMEA solutions) of Examples 1 to 6 and Comparative Examples 1 to 12. In the tables, the total solid content (components other than (E) solvent) is shown to be 100.
[0096] [Table 1]
[0097] [Table 2]
[0098] [Table 3]
[0099] In Tables 1 to 3, A-1 is the product name "RA-3631P" manufactured by Negami Chemical Industries Co., Ltd. (acrylic resin with Mw: 18,000, acid value: 5 mg KOH / g, double bond equivalent: 250 g / mol), A-2 is the product name "8KQ-7060" manufactured by Taisei Fine Chemical Co., Ltd. (acrylic resin with Mw: 33,000, acid value: 10 mg KOH / g, double bond equivalent: 260 g / mol), and A'-1 is the product name "PH-9001" manufactured by Taisei Fine Chemical Co., Ltd. (urethane resin with Mw: 20,000, acid value: 41 mg KOH / g, double bond equivalent: 890 g / mol).
[0100] In Tables 1 to 3, B-1 is FDB-002 (maximum absorption wavelength: 431 nm) manufactured by Yamada Chemical Industry Co., Ltd., B-2 is FS Yellow 1017 (maximum absorption wavelength: 443 nm) manufactured by Arimoto Chemical Industry Co., Ltd., B-3 is FDB-005 (maximum absorption wavelength: 452 nm) manufactured by Yamada Chemical Industry Co., Ltd., B-4 is FDB-006 (maximum absorption wavelength: 473 nm) manufactured by Yamada Chemical Industry Co., Ltd., B'-1 is FDB-009 (maximum absorption wavelength: 402 nm) manufactured by Yamada Chemical Industry Co., Ltd., B'-2 is FDG-001 (maximum absorption wavelength: 503 nm) manufactured by Yamada Chemical Industry Co., Ltd., and B'-3 is FDR-001 (maximum absorption wavelength: 604 nm) manufactured by Yamada Chemical Industry Co., Ltd.
[0101] In Tables 1 to 3, C-1 is the product name "Irgacure OXE01" (oxime ester type) manufactured by BASF, C-2 is the product name "ADEKA Arcles NCI-730" (oxime ester type) manufactured by ADEKA Corporation, C'-1 is the product name "Irgacure 184" (hydroxyalkylphenone type) manufactured by BASF, C'-2 is the product name "Irgacure 819" (acylphosphine oxide type) manufactured by BASF, and C'-3 is the product name "Irgacure 369" (aminoalkylphenone type) manufactured by BASF.
[0102] [ka]
[0103] In Tables 1 to 3, D-1 is the product name "KP341" (polyether type silicone surfactant) manufactured by Shin-Etsu Chemical Co., Ltd.
[0104] In Tables 1 to 3, A'-2 was synthesized as follows. 265.0 g (1.00 mol) of the following compound (S-5) was added to a 3 L flask equipped with a stirrer, thermometer, nitrogen purge device, and reflux condenser, followed by the addition of 2,000 g of toluene and heating to 70°C. 1.0 g of a toluene solution of chloroplatinic acid (platinum concentration 0.5% by mass) was then added, followed by the addition of 164.9 g (0.85 mol) of the following compound (S-1) and the following compound (S-2) (y 1 453.0 g (0.15 mol) of methyl methyl silyl ether (H2O3) (manufactured by Shin-Etsu Chemical Co., Ltd.) was added dropwise over 1 hour (total hydrosilyl groups / total alkenyl groups = 1 / 1 (molar ratio)). After the addition was completed, the mixture was heated to 100°C and aged for 6 hours. Then, toluene was distilled off from the reaction solution under reduced pressure to obtain Resin A'-2 with a Mw of 65,000.
[0105] [ka]
[0106] In Tables 1 to 3, the photoacid generator F-1 used was "CPI-210S" manufactured by San-Apro Co., Ltd.
[0107] [ka]
[0108] In Tables 1 to 3, the epoxy crosslinking agent G-1 is as follows: [ka]
[0109] [2] Preparation of photosensitive dry film Using a die coater as the film coater and a polyethylene terephthalate film (38 μm thick) as the support film, each of the photosensitive resin compositions listed in Tables 1 to 3 was applied onto the support film. The film was then dried by passing it through a hot air circulating oven (4 m long) set at 80°C for 5 minutes, forming a photosensitive resin film on the support film to a thickness of 5 μm, thereby obtaining a photosensitive dry film. A polyethylene film (50 μm thick) was laminated onto the photosensitive resin film as a protective film at a pressure of 1 MPa using a laminating roll, producing a photosensitive dry film with a protective film. When peeling off the protective film from the produced dry film, if the photosensitive resin film was found to have adhered to the protective film and peeled off from the base film in even one place, it was marked with an "X," and if there was no problem, it was marked with an "O." The results are shown in Tables 4 to 9.
[0110] [3] Transmittance of each wavelength of the cured film The protective film was peeled off from the photosensitive dry film with the protective film attached, and the degree of vacuum in the vacuum chamber was set to 80 Pa using a vacuum laminator TEAM-100RF (manufactured by Takatori Corporation), and the photosensitive resin film on the support film was adhered to a glass wafer. The temperature condition was 100°C. After returning to normal pressure, the substrate was removed from the vacuum laminator, and the support film was peeled off. Next, to improve adhesion to the substrate, the substrate was pre-baked on a hot plate at 100°C for 2 minutes. The obtained photosensitive resin film was exposed to light through a mask using an i-line stepper NSR-2205i11D (manufactured by Nikon Corporation). After irradiation, spray development was performed with PGMEA for 20 seconds, and an island pattern with sides of 4 cm was formed. At that time, the transmittance of the cured film was measured at 450 to 470 nm, 515 to 535 nm, and 620 to 640 nm using a spectrophotometer U-3900H (manufactured by Hitachi High-Tech Science Corporation). If the transmittance at 450 to 470 nm was 2% or less, the transmittance at 515 to 535 nm was 80% or more, and the transmittance at 620 to 640 nm was 80% or more, it was marked with ○, and if it did not satisfy these criteria, it was marked with ×. The results are shown in Tables 4 to 9.
[0111] [4] Pattern formation and its evaluation First, a substrate was prepared with a pattern formed from a quantum dot-containing photoresist capable of emitting red or green fluorescence. A'-2: F-1: S-BE030 (maximum fluorescence wavelength 635 nm) manufactured by Shoei Chemical Co., Ltd.; G-1: CHIMASSORB 119FL (BASF); IRGANOX 3114 (BASF); and cyclopentanone were mixed in the following ratios: 100:1:100:30:0.1:0.1:231. The mixture was then stirred and mixed at room temperature and microfiltered through a 1.0 μm glass filter to obtain quantum dot-containing photoresist R. Alternatively, quantum dot-containing photoresist G was obtained by replacing the S-BE030 with S-BE029 (maximum fluorescence wavelength 535 nm) manufactured by Shoei Chemical Co., Ltd. Next, quantum dot-containing photoresist R or G was coated onto a glass substrate using a spin coater to a thickness of 10 μm. Next, the substrate was prebaked on a hot plate at 100°C for 2 minutes. The resulting film was exposed to light through a mask using an i-line stepper NSR-2205i11D (Nikon Corporation). After irradiation, the substrate was spray-developed with PGMEA for 60 seconds to form an island pattern with sides of 4 cm. The substrate was then post-cured in an oven at 150°C for 2 hours while purging with nitrogen, producing a substrate with a pattern formed from the underlying quantum dot-containing photoresist capable of emitting red or green fluorescence.
[0112] The protective film was peeled off from the photosensitive dry film with the protective film attached. Using a vacuum laminator TEAM-100RF (manufactured by Takatori Corporation), the vacuum level in the vacuum chamber was set to 80 Pa. The photosensitive resin film on the support film was then adhered to a substrate bearing a pattern formed with the quantum dot-containing photoresist capable of emitting red or green fluorescence. The temperature condition was 100°C. After returning to normal pressure, the substrate was removed from the vacuum laminator and the support film was peeled off. Next, to enhance adhesion to the substrate, the substrate was prebaked at 100°C for 2 minutes on a hot plate. The resulting photosensitive resin film was exposed to light via a mask using an i-line stepper NSR-2205i11D (manufactured by Nikon Corporation) to form a square island pattern with a 1:1 pitch between adjacent patterns. After irradiation, spray development was performed with PGMEA for 20 seconds, forming a pattern on the quantum dot-containing photoresist cured film. The formed island patterns with sides of 50 μm, 20 μm, 10 μm, 5 μm, and 3 μm were then observed using a scanning electron microscope (SEM). The smallest pattern size that was not connected to adjacent island patterns (with a 1:1 pitch) was determined as the limiting resolution. Patterns whose resolution did not reach 50 μm were marked with an "X." The perpendicularity of the patterns was also evaluated, with perpendicular patterns marked with an "O" and patterns with tapered shapes or poor openings marked with an "X." The results are shown in Tables 4 to 9.
[0113] [5] Chromaticity measurement Using a substrate with a pattern formed from the quantum dot-containing photoresist capable of emitting red or green fluorescence, island patterns measuring 4 cm on a quantum dot-containing photoresist cured film were formed using the photosensitive resin compositions of Examples 1 to 6 and Comparative Examples 1 to 12 in the same manner as described above. Subsequently, chromaticity measurements were performed from the front side of the substrate using a spectroradiometer MK350S PREMIUM (manufactured by UPRtek) while irradiating the backside of the substrate with blue LED light. The result was marked red when x≧0.5 (red region), green when y≧0.5 (green region), and × otherwise. The result of measuring the chromaticity of the substrate itself with a pattern formed from the quantum dot-containing photoresist capable of emitting red fluorescence was designated Ref. R, and the result of measuring the chromaticity of the substrate itself with a pattern formed from the quantum dot-containing photoresist capable of emitting green fluorescence was designated Ref. G. The results are shown in Tables 4 to 9.
[0114] [6] Light resistance test Using the substrate used in the above color measurement, the illuminance was measured at 65 W / m using an Atlas Suntest XLS+ manufactured by Toyo Seiki Seisakusho Co., Ltd. 2 A sunlight lightfastness test was conducted for 500 hours at an ambient temperature of 100°C, and the chromaticity was measured again. A change in x or y before and after the lightfastness test of ≥ 0.03 was marked with an ×, and a change of less than 0.03 was marked with an ◯. The chromaticity measurement results for the substrate itself, which had a pattern formed with a quantum dot-containing photoresist capable of emitting red fluorescence, were marked Ref. R, and the chromaticity measurement results for the substrate itself, which had a pattern formed with a quantum dot-containing photoresist capable of emitting green fluorescence, were marked Ref. G. The results are shown in Tables 4 to 9.
[0115] [7] Adhesion test A cross-cut peel test (JISK5400) was carried out using the substrates used in the color measurement. As a result, if there was even one peeled area, it was marked with "x", and if there was no peeled area, it was marked with "o". The results are shown in Tables 4 to 9.
[0116] [Table 4]
[0117] [Table 5]
[0118] [Table 6]
[0119] [Table 7]
[0120] [Table 8]
[0121] [Table 9]
[0122] As shown in Tables 4 to 9, Examples 1 to 6, which are photosensitive resin compositions of the present invention, were able to be easily peeled from the protective film, selectively cut blue LED light, form vertical patterns with high resolution, and had good and sustained blue light absorption properties and good adhesion. On the other hand, Comparative Examples 1 to 12, which are photosensitive resin compositions lacking any one of (A) an acrylic resin having a (meth)acryloyl group in the side chain, (B) a dye having an absorption maximum wavelength in the range of 490 to 430 nm, and (C) an oxime-based photoradical generator, all exhibited poor pattern formation, sustained blue light absorption properties, and adhesion. Comparative Examples 1 to 8 also exhibited poor peeling from the protective film.
[0123] From the above results, it can be seen that the photosensitive resin composition of the present invention has lithography performance that allows it to form good photosensitive coatings and photosensitive dry films and to easily form fine, highly vertical patterns on a quantum dot-containing cured photoresist film. Furthermore, the resulting cured film absorbs the blue light that has passed through the quantum dot-containing cured photoresist film, allowing only red or green light to be selectively and efficiently extracted, and is endowed with high light resistance that does not affect chromaticity, making it suitable for use in display devices such as micro LED displays.
[0124] This specification includes the following inventions.
[0125] [1]: A photosensitive resin composition for absorbing blue LED light transmitted through a quantum dot-containing photoresist cured film capable of emitting red or green fluorescence, characterized in that the photosensitive resin composition contains: (A) an acrylic resin having a (meth)acryloyl group in the side chain; (B) a dye having an absorption maximum wavelength in the range of 490 to 430 nm; (C) an oxime-based photoradical generator; (D) a surfactant; and (E) a solvent.
[0126] [2]: The photosensitive resin composition according to [1] above, wherein the component (A) is an alkali-insoluble resin having a weight-average molecular weight Mw of 10,000 to 50,000, a double bond equivalent of ≦300 g / mol, and an acid value of ≦10 mg KOH / g.
[0127] [3]: The photosensitive resin composition according to the above [1] or [2], wherein the component (B) is contained in an amount of 0.5 to 15% by mass in the non-volatile components of the photosensitive resin composition.
[0128] [4]: The photosensitive resin composition according to any one of the above [1] to [3], which gives a cured film having a thickness of 1 to 10 μm, and having a transmittance of 2% or less at wavelengths of 450 to 470 nm, a transmittance of 80% or more at wavelengths of 515 to 535 nm, and a transmittance of 80% or more at wavelengths of 620 to 640 nm.
[0129] [5]: A photosensitive resin film, which is a dried product of the photosensitive resin composition according to any one of [1] to [4] above.
[0130] [6]: A photosensitive dry film comprising a support film and the photosensitive resin film according to [5] above formed on the support film.
[0131] [7]: A pattern formation method, comprising the steps of: (i) applying the photosensitive resin composition according to any one of [1] to [4] above onto a substrate having a pattern formed of a quantum dot-containing photoresist capable of emitting red or green fluorescence, and forming a photosensitive resin film on the substrate; (ii) exposing the photosensitive resin film to light; and (iii) developing the exposed photosensitive resin film with a developer to dissolve and remove unexposed areas, thereby forming a pattern having a film thickness of 1 to 10 μm on the quantum dot-containing photoresist.
[0132] [8]: The pattern forming method according to the above [7], wherein post-baking is not performed after the step (ii).
[0133] [9]: A pattern formation method comprising the steps of: (i') attaching the photosensitive resin film of the photosensitive dry film described in [6] above onto a substrate having a pattern formed of a quantum dot-containing photoresist capable of emitting red or green fluorescence, thereby forming the photosensitive resin film on the substrate; (ii') exposing the photosensitive resin film to light; and (iii') developing the exposed photosensitive resin film with a developer to dissolve and remove unexposed areas, thereby forming a pattern having a film thickness of 1 to 10 μm on the quantum dot-containing photoresist.
[0134]
[10] : The pattern forming method according to the above [9], wherein post-baking is not performed after the step (ii').
[0135]
[11] : A display device comprising: a blue LED; a pattern formed of a quantum dot-containing photoresist capable of emitting red or green fluorescence and provided on the blue LED; and a pattern formed of a cured film of the photosensitive resin composition described in any one of [1] to [4] above and provided on the pattern; wherein the cured film absorbs blue LED light that has not been color-converted by the quantum dots, and only light converted to red or green is extracted from each subpixel.
[0136]
[12] : A blue LED, a pattern formed of a quantum dot-containing photoresist capable of emitting red or green fluorescence and provided on the blue LED, and a pattern formed of a cured film of the photosensitive resin composition described in any one of [1] to [4] above and provided on the pattern, wherein the size of the pattern formed of the cured film is 0.01 mm 2 A micro LED display characterized in that the cured coating absorbs blue LED light that has not been color-converted by the quantum dots and extracts only light converted to red or green from each subpixel.
[0137]
[13] : A laminate comprising a quantum dot-containing photoresist capable of emitting red or green fluorescence and a cured film of the photosensitive resin composition according to any one of [1] to [4] above formed on the quantum dot-containing photoresist.
[0138] The present invention is not limited to the above-described embodiments. The above-described embodiments are merely examples, and anything that has substantially the same configuration as the technical idea described in the claims of the present invention and that exhibits similar effects is included within the technical scope of the present invention. [Explanation of symbols]
[0139] 1...cured film 1 of the photosensitive resin composition of the present invention, 2...Quantum dot-containing photoresist cured film, 3...Blue LED, 10, 30...blue LED light, 20...red fluorescent.
Claims
1. A photosensitive resin composition for absorbing blue LED light transmitted through a quantum dot-containing cured photoresist film capable of emitting red or green fluorescence, comprising: (A) an acrylic resin having a (meth)acryloyl group in a side chain; (B) a dye having an absorption maximum wavelength in the range of 490 to 430 nm; (C) an oxime-based photoradical generator, (D) a surfactant, and (E) Solvent A photosensitive resin composition comprising:
2. 2. The photosensitive resin composition according to claim 1, wherein the component (A) is an alkali-insoluble resin having a weight-average molecular weight Mw of 10,000 to 50,000, a double bond equivalent of ≦300 g / mol, and an acid value of ≦10 mg KOH / g.
3. 2. The photosensitive resin composition according to claim 1, wherein the component (B) is contained in an amount of 0.5 to 15% by mass of the nonvolatile components of the photosensitive resin composition.
4. 2. The photosensitive resin composition according to claim 1, which gives a cured film having a thickness of 1 to 10 μm and having a transmittance of 2% or less in wavelengths of 450 to 470 nm, a transmittance of 80% or more in wavelengths of 515 to 535 nm, and a transmittance of 80% or more in wavelengths of 620 to 640 nm.
5. A photosensitive resin film, which is a dried product of the photosensitive resin composition according to any one of claims 1 to 4.
6. A photosensitive dry film comprising a support film and the photosensitive resin film according to claim 5 formed on the support film.
7. A pattern formation method, comprising: (i) applying the photosensitive resin composition according to any one of claims 1 to 4 onto a substrate having a pattern formed with a quantum dot-containing photoresist capable of emitting red or green fluorescence, to form a photosensitive resin film on the substrate; (ii) exposing the photosensitive resin film to light; and (iii) A step of developing the exposed photosensitive resin film with a developer to dissolve and remove the unexposed areas, thereby forming a pattern with a film thickness of 1 to 10 μm on the quantum dot-containing photoresist. A pattern forming method comprising the steps of:
8. 8. The pattern formation method according to claim 7, wherein post-baking is not performed after the step (ii).
9. A pattern formation method, comprising: (i') a step of attaching the photosensitive resin coating of the photosensitive dry film according to claim 6 onto a substrate having a pattern formed of a quantum dot-containing photoresist capable of emitting red or green fluorescence, thereby forming the photosensitive resin coating on the substrate; (ii') exposing the photosensitive resin film to light; and (iii') A step of developing the exposed photosensitive resin film with a developer to dissolve and remove the unexposed areas, thereby forming a pattern with a film thickness of 1 to 10 μm on the quantum dot-containing photoresist. A pattern forming method comprising the steps of:
10. 10. The pattern formation method according to claim 9, wherein post-baking is not performed after the step (ii').
11. 10. A display device comprising: a blue LED; a pattern formed of a quantum dot-containing photoresist capable of emitting red or green fluorescence and provided on the blue LED; and a pattern formed of a cured film of the photosensitive resin composition according to claim 1 and provided on the pattern; wherein the cured film absorbs blue LED light that has not been color-converted by the quantum dots, and only light converted to red or green is extracted from each subpixel.
12. A method for manufacturing a photosensitive resin composition according to claim 1, comprising: a blue LED; a pattern formed of a quantum dot-containing photoresist capable of emitting red or green fluorescence and provided on the blue LED; and a pattern formed of a cured film of the photosensitive resin composition according to claim 1, provided on the pattern; wherein the size of the pattern formed of the cured film is 0.01 mm. 2 A micro LED display characterized in that the cured coating absorbs blue LED light that has not been color-converted by the quantum dots, and only light converted to red or green is extracted from each subpixel.
13. A laminate comprising a quantum dot-containing photoresist capable of emitting red or green fluorescence and a cured film of the photosensitive resin composition according to any one of claims 1 to 4 formed on the quantum dot-containing photoresist.
Citation Information
Patent Citations
Photosensitive resin composition, photosensitive resin coating, photosensitive dry film, pattern forming method, and light emitting element
JP2021089347A