Film formation device and film formation method

Abstract

To provide a film formation device and a film formation method, in which the generation of particles is reduced.SOLUTION: A film formation device includes a tubular processing container 10 that extends along a first axis (vertical axis) and accommodates a substrate, a first nozzle 31 that extends along the first axis and discharges a first processing gas, a second nozzle 32 that extends along the first axis at a position different in a peripheral direction of the processing container relative to the first nozzle and discharges a second processing gas that generates a reaction product by reaction with the first processing gas, and a shutter 81 that moves between a plurality of positions. The plurality of positions include a first position of blocking a second gas hole 32a and not blocking a first gas hole 31a, and a second position of blocking the first gas hole and not blocking the second gas hole. In the case of discharging the first processing gas from the first nozzle, the shutter is moved to the first position and in the case of discharging the second processing gas from the second nozzle, the shutter is moved to the second position.SELECTED DRAWING: Figure 2

Description

[Technical Field]

[0001] The present disclosure relates to a film forming apparatus and a film forming method. [Background technology]

[0002] A film forming apparatus is known that includes a gas nozzle that supplies a source gas into a processing chamber, and a gas nozzle that supplies a reaction gas that reacts with the source gas to produce a reaction product into the processing chamber (see, for example, Patent Documents 1 and 2). [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Laid-Open No. 2018-148099 [Patent Document 2] Japanese Patent Application Publication No. 2020-064949 Summary of the Invention [Problem to be solved by the invention]

[0004] The present disclosure provides a technique that can reduce particle generation. [Means for solving the problem]

[0005] a first nozzle extending along the first axis at a different circumferential position of the processing vessel from the first nozzle, the second nozzle having a second gas hole for discharging a second processing gas into the processing vessel, the second nozzle extending along the first axis at a different circumferential position of the processing vessel from the first nozzle, the second nozzle having a second gas hole for discharging a second processing gas that reacts with the first processing gas to produce a reaction product; a shutter that moves between a plurality of positions; a drive source that moves the shutter; and a controller that controls the drive source, wherein the plurality of positions include a first position that does not block the first gas hole but blocks the second gas hole, and a second position that blocks the first gas hole but does not block the second gas hole; and the controller controls the drive source to move the shutter to the first position when discharging the first processing gas from the first nozzle and to move the shutter to the second position when discharging the second processing gas from the second nozzle. [Effects of the Invention]

[0006] According to the present disclosure, particle generation can be reduced. [Brief explanation of the drawings]

[0007] [Figure 1] 1 is a vertical cross-sectional view showing a film forming apparatus according to an embodiment. [Figure 2] FIG. 3 is a diagram illustrating an example of a shutter of the film forming apparatus according to the embodiment. [Figure 3] FIG. 2 is a diagram showing a state in which the shutter is in a first position. [Figure 4] FIG. 10 is a diagram showing a state in which the shutter is in a second position. [Figure 5] FIG. 10 is a diagram showing a state in which the shutter is in a third position. [Figure 6] 2 is a flowchart illustrating a film forming method according to an embodiment. [Figure 7] 10A and 10B are diagrams illustrating a modified example of the shutter of the film forming apparatus according to the embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0008] Hereinafter, non-limiting exemplary embodiments of the present disclosure will be described with reference to the accompanying drawings. In all the accompanying drawings, the same or corresponding reference numerals are used to designate the same or corresponding members or components, and redundant descriptions will be omitted.

[0009] A film forming apparatus 1 according to an embodiment will be described with reference to FIGS. 1 to 5. FIG. 1 is a vertical cross-sectional view showing the film forming apparatus 1 according to the embodiment. FIG. 2 is a view showing an example of a shutter 81 of the film forming apparatus 1 according to the embodiment. FIG. 3 is a view showing a state in which the shutter 81 is in a first position. FIG. 4 is a view showing a state in which the shutter 81 is in a second position. FIG. 5 is a view showing a state in which the shutter 81 is in a third position. FIG. 1 corresponds to a cross-sectional view taken along line II in FIG. 2.

[0010] The film forming apparatus 1 is a batch-type apparatus that processes multiple substrates W at once. The substrates W are, for example, semiconductor wafers. The film forming apparatus 1 includes a processing chamber 10, a gas supply unit 30, a plasma generation unit 40, an exhaust unit 50, a heating unit 60, a movable wall 80, and a control unit 90.

[0011] The inside of the processing vessel 10 can be depressurized. The processing vessel 10 has a double-tube structure including an inner tube 11 and an outer tube 12. The inner tube 11 and the outer tube 12 are made of, for example, quartz.

[0012] The inner pipe 11 has a cylindrical shape extending along a vertical axis. The vertical axis is an example of a first axis. The inner pipe 11 is open at its lower end and closed at its upper end. Openings 11a and 11b are provided in a portion of the side wall of the inner pipe 11. Openings 11a and 11b face each other. Openings 11a and 11b have a rectangular shape extending along the vertical axis. The upper ends of openings 11a and 11b are located, for example, above the upper end of the boat 16. The lower ends of openings 11a and 11b are located, for example, below the lower end of the boat 16. A nozzle accommodating portion 13 is provided in a portion of the side wall of the inner pipe 11. The nozzle accommodating portion 13 is located at a different position in the circumferential direction of the inner pipe 11 from openings 11a and 11b. For example, nozzle accommodating portion 13 is provided at the 1 o'clock position, opening 11b is provided at the 3 o'clock position, and opening 11a is provided at the 9 o'clock position. Nozzle accommodating portion 13 has a shape in which a portion of the side wall of inner tube 11 bulges outward. Nozzle accommodating portion 13 accommodates first nozzle 31.

[0013] The outer pipe 12 covers the outside of the inner pipe 11. The outer pipe 12 has a cylindrical shape extending along a vertical axis. The outer pipe 12 has an open lower end and a closed upper end. The lower end of the outer pipe 12 is supported by a manifold 17.

[0014] The manifold 17 has a cylindrical shape. The manifold 17 is made of, for example, stainless steel. A flange 18 is provided at the upper end of the manifold 17. The flange 18 supports the lower end of the outer tube 12. A seal member 19 is provided between the flange 18 and the lower end of the outer tube 12. This maintains the interior of the outer tube 12 airtight. The seal member 19 is, for example, an O-ring. An annular support member 20 is provided on the inner wall of the upper part of the manifold 17. The support member 20 supports the lower end of the inner tube 11. An exhaust port 17a is provided on the side wall of the upper part of the manifold 17, above the support member 20. A lid 21 is airtightly attached to the opening at the lower end of the manifold 17 via a seal member 22 such as an O-ring. This airtightly closes the opening at the lower end of the processing vessel 10, i.e., the opening of the manifold 17. The lid 21 is made of, for example, stainless steel.

[0015] A rotating shaft 24 is provided in the center of the lid 21, penetrating through the lid 21 via a magnetic fluid seal 23. The lower part of the rotating shaft 24 is rotatably supported by an arm 25A of an elevation mechanism 25 made up of a boat elevator.

[0016] A rotating plate 26 is provided on the upper end of the rotating shaft 24. The boat 16 is placed on the rotating plate 26 via a quartz heat retention stand 27. The boat 16 rotates when the rotating shaft 24 is rotated. The boat 16 moves up and down integrally with the lid 21 when the lifting mechanism 25 is raised and lowered. This allows the boat 16 to be carried in and out of the processing vessel 10. The boat 16 can be accommodated within the processing vessel 10. The boat 16 holds multiple (e.g., 50 to 150) substrates W approximately horizontally with spacing between them in the vertical direction.

[0017] The gas supply unit 30 supplies various gases into the processing vessel 10. The gas supply unit 30 includes a first nozzle 31 and a second nozzle 32. The first nozzle 31 and the second nozzle 32 are made of, for example, quartz. The gas supply unit 30 may further include another gas nozzle.

[0018] The first nozzle 31 has an L-shape that penetrates the side wall of the manifold 17 inward, bends upward, and extends vertically along the vertical axis. The vertical portion of the first nozzle 31 is housed in the nozzle housing portion 13. A plurality of first gas holes 31a are provided in the vertical portion of the first nozzle 31. The plurality of first gas holes 31a are provided at predetermined intervals along the extension direction of the first nozzle 31. Each of the first gas holes 31a is oriented toward the center of the inner tube 11, for example.

[0019] A supply line L1 is connected to the first nozzle 31. A dichlorosilane (DCS) gas supply source G1, a mass flow controller F1, and an on-off valve V1 are provided on the supply line L1, in this order from upstream to downstream in the gas flow direction. DCS gas is an example of a first process gas. The supply timing of the DCS gas from the supply source G1 is controlled by the on-off valve V1, and the flow rate is adjusted to a predetermined value by the mass flow controller F1. The DCS gas flows from the supply line L1 into the first nozzle 31 and is discharged toward the center of the inner tube 11 through a plurality of first gas holes 31a.

[0020] A supply line L2 is connected to the first nozzle 31. A nitrogen (N2) gas supply source G2, a mass flow controller F2, and an on-off valve V2 are provided on the supply line L2, in this order from upstream to downstream in the gas flow direction. Nitrogen gas is an example of a first purge gas. The supply timing of the nitrogen gas from the supply source G2 is controlled by the on-off valve V2, and the flow rate is adjusted to a predetermined value by the mass flow controller F2. The nitrogen gas flows from the supply line L2 into the first nozzle 31 and is discharged toward the center of the inner tube 11 through multiple first gas holes 31a.

[0021] The second nozzle 32 is provided at a different position in the circumferential direction of the inner tube 11 relative to the first nozzle 31. The second nozzle 32 has an L-shape that penetrates inward through the side wall of the manifold 17, bends upward, and extends vertically along the vertical axis. The vertical portion of the second nozzle 32 is provided in the plasma generation space 41a. A plurality of second gas holes 32a are provided in the vertical portion of the second nozzle 32. The plurality of second gas holes 32a are provided at predetermined intervals along the extension direction of the second nozzle 32. Each second gas hole 32a is oriented toward the center of the inner tube 11, for example.

[0022] A supply line L3 is connected to the second nozzle 32. On the supply line L3, an ammonia (NH3) gas supply source G3, a mass flow controller F3, and an on-off valve V3 are provided, in that order from upstream to downstream in the gas flow direction. Ammonia gas is an example of a second process gas. The supply timing of the ammonia gas from the supply source G3 is controlled by the on-off valve V3, and the flow rate is adjusted to a predetermined value by the mass flow controller F3. The ammonia gas flows from the supply line L3 into the second nozzle 32 and is discharged toward the center of the inner tube 11 through multiple second gas holes 32a.

[0023] A supply line L4 is connected to the second nozzle 32. A nitrogen gas supply source G4, a mass flow controller F4, and an on-off valve V4 are provided on the supply line L4, in that order from upstream to downstream in the gas flow direction. Nitrogen gas is an example of a second purge gas. The supply timing of the nitrogen gas from the supply source G4 is controlled by the on-off valve V4, and the flow rate is adjusted to a predetermined value by the mass flow controller F4. The nitrogen gas flows from the supply line L4 into the second nozzle 32 and is discharged toward the center of the inner tube 11 through multiple second gas holes 32a.

[0024] The plasma generating unit 40 includes a plasma box 41 , a pair of plasma electrodes 42 and 43 , a power supply line 44 , and an RF power supply 45 .

[0025] The plasma box 41 is provided on a part of the side wall of the inner tube 11 so as to cover the opening 11b. The plasma box 41 airtightly closes the opening 11a. The plasma box 41 extends to the outside of the outer tube 12. The plasma box 41 is formed of, for example, quartz. The plasma box 41 defines a plasma generation space 41a that is isolated from the space outside the processing vessel 10. The plasma generation space 41a communicates with the inside of the inner tube 11. A vertical portion of the second nozzle 32 is provided in the plasma generation space 41a.

[0026] The plasma electrode 42 is provided on the outside of one of the portions of the plasma box 41 that extend along the radial direction of the inner tube 11. The plasma electrode 43 is provided on the outside of the other of the portions of the plasma box 41 that extend along the radial direction of the inner tube 11. The plasma electrodes 42 and 43 are arranged opposite each other. The plasma electrodes 42 and 43 have a rectangular shape that extends along the vertical axis. A power supply line 44 is connected to the plasma electrodes 42 and 43.

[0027] The power supply line 44 electrically connects the plasma electrode 42 to the RF power supply 45 and also electrically connects the plasma electrode 43 to the RF power supply 45 .

[0028] The RF power supply 45 supplies RF power to the pair of plasma electrodes 42, 43. The frequency of the RF power is, for example, 13.56 MHz. When ammonia gas is supplied from the second nozzle 32 and RF power is supplied from the RF power supply 45 to the pair of plasma electrodes 42, 43, plasma is generated from the ammonia gas in the plasma generation space 41a.

[0029] The exhaust unit 50 includes an exhaust line 51, a pressure adjustment valve 52, and a vacuum pump 53. The exhaust line 51 is connected to the exhaust port 17a. Gas inside the processing vessel 10 is exhausted from the exhaust port 17a to the exhaust line 51. The exhaust line 51 is provided with the pressure adjustment valve 52 and the vacuum pump 53, in this order, from the upstream side to the downstream side in the gas flow direction. The exhaust unit 50 adjusts the pressure inside the processing vessel 10 with the pressure adjustment valve 52, while exhausting the gas inside the processing vessel 10 with the vacuum pump 53.

[0030] The heating unit 60 has a heater 61. The heater 61 has a cylindrical shape and is provided around the outer tube 12. The heater 61 is provided on the base plate 28. The heater 61 heats each substrate W in the inner tube 11. The heating unit 60 may have a heat insulating material.

[0031] The movable wall 80 has a shutter 81 and a drive source 82 .

[0032] The shutter 81 is provided within the inner tube 11. The shutter 81 is provided along the inner wall of the inner tube 11. The shutter 81 has a cylindrical shape. The shutter 81 has a circular shape in a plan view perpendicular to the vertical axis. The shutter 81 has a first slit 81a, a second slit 81b, and a third slit 81c. The first slit 81a, the second slit 81b, and the third slit 81c have rectangular shapes extending along the vertical axis. The upper ends of the first slit 81a, the second slit 81b, and the third slit 81c are located above the upper end of the boat 16, for example. The lower ends of the first slit 81a, the second slit 81b, and the third slit 81c are located below the lower end of the boat 16, for example. The width W11 of the first slit 81a may be wider than the opening width W21 of the nozzle accommodating portion 13. The width W12 of the second slit 81b may be wider than the width W22 of the opening 11b. The width W13 of the third slit 81c may be wider than the width W23 of the opening 11a. The first slit 81a, the second slit 81b, and the third slit 81c are provided at different positions in the circumferential direction of the inner tube 11. For example, the first slit 81a is provided in the 1 o'clock direction, the second slit 81b is provided in the 3 o'clock direction, and the third slit 81c is provided in the 9 o'clock direction.

[0033] The driving source 82 rotates the shutter 81 to move the shutter 81 between a plurality of positions. The driving source 82 includes, for example, a motor. The plurality of positions include a first position, a second position, and a third position.

[0034] 3, the first position is a position where the shutter 81 does not block the first gas hole 31a, blocks the second gas hole 32a, and does not block the opening 11a. The first position may be a position where at least a portion of the first slit 81a is at the same rotational angle position as the first nozzle 31, and the second nozzle 32 and second slit 81b are at different rotational angle positions.

[0035] 4, the second position is a position where the shutter 81 blocks the first gas hole 31a, does not block the second gas hole 32a, and does not block the opening 11a. The second position may be a position where the first nozzle 31 and the first slit 81a are at different rotational angle positions, and at least a portion of the second slit 81b is at the same rotational angle position as the second nozzle 32.

[0036] 5, the shutter 81 is at a position where the first gas hole 31a, the second gas hole 32a, and the opening 11a are not blocked. The third position may be a position where at least a portion of the first slit 81a is at the same rotational angle position as the first nozzle 31, and at least a portion of the second slit 81b is at the same rotational angle position as the second nozzle 32.

[0037] The control unit 90 is an electronic circuit such as a CPU (Central Processing Unit), FPGA (Field Programmable Gate Array), ASIC (Application Specific Integrated Circuit), etc. The control unit 90 executes various control operations described in this specification by executing instruction codes stored in a memory or by being a circuit designed for a specific application.

[0038] 3 to 6, the operation of the film forming apparatus 1 when performing the film forming method according to the embodiment will be described. Fig. 6 is a flowchart showing the film forming method according to the embodiment. The film forming method according to the embodiment is performed under the control of a control unit 90.

[0039] First, the control unit 90 executes the loading step S1. In the loading step S1, the lifting mechanism 25 loads the boat 16 holding the substrates W into the processing vessel 10. Next, the lid 21 airtightly closes and seals the opening at the bottom of the processing vessel 10. Next, the exhaust unit 50 reduces the pressure inside the processing vessel 10, and the heating unit 60 adjusts the temperature of the substrates W to a film formation temperature.

[0040] Next, the control unit 90 executes the purge process S2. In the purge process S2, the drive source 82 moves the shutter 81 to the third position (see FIG. 5), and the gas supply unit 30 discharges nitrogen gas from the first nozzle 31 and the second nozzle 32 into the inner pipe 11. In the third position, the first gas hole 31a and the second gas hole 32a are not blocked. In this case, nitrogen gas can be discharged from both the first nozzle 31 and the second nozzle 32. Therefore, nitrogen gas can be discharged into the inner pipe 11 at a high flow rate. As a result, the time required to purge the processing vessel 10 can be shortened. In the third position, the opening 11a is not blocked. In this case, the nitrogen gas discharged into the inner pipe 11 is exhausted to the exhaust port 17a through the opening 11a.

[0041] Next, the control unit 90 executes the adsorption step S3. In the adsorption step S3, the drive source 82 moves the shutter 81 to the first position (see FIG. 3 ), and the gas supply unit 30 discharges DCS gas from the first nozzle 31 into the inner tube 11. In the first position, the first gas hole 31 a is not blocked by the shutter 81. In this case, DCS gas is discharged from the first nozzle 31 toward the substrate W. In the first position, the second gas hole 32 a is blocked by the shutter 81. In this case, diffusion of the DCS gas discharged from the first nozzle 31 into the plasma box 41 can be reduced. This reduces the deposition of a silicon nitride film in the plasma box 41 and the second nozzle 32. As a result, the generation of particles can be reduced. On the other hand, if a silicon nitride film is deposited in the plasma box 41, for example, the silicon nitride film deposited in the plasma box 41 may be peeled off by sputtering due to plasma generated from ammonia gas in the nitriding step S5, thereby generating particles. In the first position, the opening 11a is not blocked. In this case, the DCS gas discharged into the inner tube 11 is exhausted to the exhaust port 17a through the opening 11a. In the adsorption step S3, the gas supply unit 30 may discharge nitrogen gas from the second nozzle 32 at a small flow rate that does not affect the process. In this case, back-diffusion of DCS gas into the supply line L3 and the supply line L4 can be reduced.

[0042] Next, the control unit 90 executes a purging step S4. The purging step S4 may be the same as the purging step S2.

[0043] Next, the control unit 90 executes the nitriding step S5. In the nitriding step S5, the drive source 82 moves the shutter 81 to the second position (see FIG. 4), and the gas supply unit 30 discharges ammonia gas from the second nozzle 32 into the inner tube 11. In the nitriding step S5, the RF power supply 45 supplies RF power to the pair of plasma electrodes 42, 43 to generate plasma from the ammonia gas in the plasma generation space 41a. In the second position, the second gas holes 32a are not blocked by the shutter 81. In this case, ammonia gas is discharged from the second nozzle 32 toward the substrate W. In the second position, the first gas holes 31a are blocked by the shutter 81. In this case, diffusion of the ammonia gas discharged from the second nozzle 32 into the first nozzle 31 can be reduced. Therefore, reaction products generated by the reaction between the DCS gas and the ammonia gas are less likely to accumulate in the first nozzle 31. As a result, generation of particles can be reduced. In the second position, the opening 11a is not blocked. In this case, the ammonia gas discharged into the inner pipe 11 is exhausted to the exhaust port 17a through the opening 11a. In the nitriding step S5, the gas supply unit 30 may discharge nitrogen gas from the first nozzle 31 at a small flow rate that does not affect the process. In this case, back-diffusion of ammonia gas into the supply line L1 and the supply line L2 can be reduced.

[0044] Next, the control unit 90 executes the determination step S6. In the determination step S6, the control unit 90 determines whether the purging step S2, the adsorption step S3, the purging step S4, and the nitriding step S5 have been performed the set number of times. If the number of times has not reached the set number (NO in the determination step S6), the control unit 90 executes the purging step S2, the adsorption step S3, the purging step S4, and the nitriding step S5 again. If the number of times has reached the set number of times (YES in the determination step S6), the control unit 90 proceeds to the unloading step S7. Thus, in the film forming method according to the embodiment, the purging step S2, the adsorption step S3, the purging step S4, and the nitriding step S5 are repeated until the number of times has reached the set number, thereby forming a silicon nitride film on the substrate W.

[0045] Next, the control unit 90 executes the unloading process S7. In the unloading process S7, the exhaust unit 50 exhausts gas from the processing vessel 10 to raise the pressure inside the processing vessel 10 to atmospheric pressure, and the cooling unit (not shown) cools the temperature inside the processing vessel 10 to the unloading temperature. Then, the lifting mechanism 25 unloads the boat 16 from the processing vessel 10.

[0046] As described above, according to the embodiment, the control unit 90 controls the drive source 82 to move the shutter 81 to the first position when DCS gas is discharged from the first nozzle 31, and to move the shutter 81 to the second position when ammonia gas is discharged from the second nozzle 32. In this case, diffusion of DCS gas into the plasma box 41 when DCS gas is discharged from the first nozzle 31 can be reduced. This makes it difficult for reaction products resulting from the reaction between DCS gas and ammonia gas to accumulate in the second nozzle 32 and the plasma box 41. Furthermore, diffusion of ammonia gas into the first nozzle 31 when ammonia gas is discharged from the second nozzle 32 can be reduced. This makes it difficult for reaction products resulting from the reaction between DCS gas and ammonia gas to accumulate in the first nozzle 31. As a result, particle generation can be reduced.

[0047] The embodiments disclosed herein should be considered to be illustrative in all respects and not restrictive, and the above-described embodiments may be omitted, substituted, or modified in various ways without departing from the scope and spirit of the appended claims.

[0048] In the above embodiment, the shutter 81 has a circular shape in a plan view perpendicular to the vertical axis. However, the present disclosure is not limited to this. FIG. 7 is a diagram showing a modified example of the shutter 81 of the film forming apparatus 1 according to the embodiment. As shown in FIG. 7, the shutter 81 may have an arc shape in a plan view perpendicular to the vertical axis.

[0049] In the above embodiment, the first nozzle 31 is accommodated in the nozzle accommodating portion 13, and the second nozzle 32 is provided in the plasma generation space 41a. However, the present disclosure is not limited to this. For example, the first nozzle 31 and the second nozzle 32 may be accommodated in the nozzle accommodating portion 13. In this case, the film forming apparatus 1 does not need to include the plasma generation unit 40.

[0050] In the above embodiment, the first process gas is DCS gas and the second process gas is ammonia gas, but the present disclosure is not limited thereto. The first process gas and the second process gas may be different gases as long as they react with each other to produce a reaction product. [Explanation of symbols]

[0051] 1 Film deposition equipment 10 Processing container 11 Inner tube 12 Outer tube 31 No. 1 nozzle 31a First gas hole 32 Second nozzle 32a Second gas hole 80 Movable wall 81 Shutter 82 Drive source 90 Control Unit

Claims

1. a cylindrical processing vessel extending along a first axis and configured to accommodate a substrate; a first nozzle extending along the first axis and having a first gas hole through which a first process gas is discharged into the process vessel; a second nozzle extending along the first axis at a different circumferential position of the processing vessel from the first nozzle, the second nozzle having a second gas hole for discharging a second processing gas into the processing vessel, the second processing gas reacting with the first processing gas to generate a reaction product; a shutter that moves between a plurality of positions; a drive source that moves the shutter; a control unit that controls the drive source; Equipped with the plurality of positions include a first position that does not block the first gas hole but blocks the second gas hole, and a second position that blocks the first gas hole but does not block the second gas hole, the control unit controls the drive source to move the shutter to the first position when the first process gas is discharged from the first nozzle, and to move the shutter to the second position when the second process gas is discharged from the second nozzle. Film deposition equipment.

2. the shutter is provided in the processing vessel along an inner wall of the processing vessel, the drive source rotates the shutter to move the shutter between the first position and the second position; The film forming apparatus according to claim 1 .

3. the shutter has a first slit and a second slit spaced apart from each other in a circumferential direction of the processing vessel, the first position is a position where at least a portion of the first slit is at the same rotational angle position as the first nozzle, the second position is a position where at least a portion of the second slit is at the same rotational angle position as the second nozzle; The film forming apparatus according to claim 2 .

4. the first nozzle is configured to discharge a first purge gas from the first gas hole; the second nozzle is configured to discharge a second purge gas from the second gas hole; the control unit causes the second nozzle to discharge the second purge gas when discharging the first process gas from the first nozzle, and causes the first nozzle to discharge the first purge gas when discharging the second process gas from the second nozzle. The film forming apparatus according to claim 1 .

5. the first nozzle is configured to discharge a first purge gas from the first gas hole; the second nozzle is configured to discharge a second purge gas from the second gas hole; the plurality of positions includes a third position that does not block the first gas hole and the second gas hole; the control unit moves the shutter to the third position when the first purge gas is discharged from the first nozzle and the second purge gas is discharged from the second nozzle. The film forming apparatus according to claim 1 .

6. An opening is formed in a sidewall of the processing vessel, a plasma box provided on a part of a sidewall of the processing vessel so as to cover the opening of the processing vessel and defining a plasma generation space isolated from a space outside the processing vessel; The second gas hole is provided in the plasma generation space. The film forming apparatus according to claim 1 .

7. a cylindrical processing vessel extending along a first axis and configured to accommodate a substrate; a first nozzle extending along the first axis and having a first gas hole through which a first process gas is discharged into the process vessel; a second nozzle extending along the first axis at a different circumferential position of the processing vessel from the first nozzle, the second nozzle having a second gas hole for discharging a second processing gas into the processing vessel, the second processing gas reacting with the first processing gas to generate a reaction product; a shutter that moves between a plurality of positions; a drive source that moves the shutter; A film forming method performed in a film forming apparatus comprising: the plurality of positions include a first position that does not block the first gas hole but blocks the second gas hole, and a second position that blocks the first gas hole but does not block the second gas hole, moving the shutter to the first position and discharging the first process gas from the first nozzle; moving the shutter to the second position and discharging the second process gas from the second nozzle; having Film formation method.

Images