Bolometer array, bolometer array unit, and light detection method

Abstract

To make it possible to suppress the influence of variations in the resistance values and resistance temperature change coefficient characteristics of a plurality of bolometers.SOLUTION: A bolometer array includes a plurality of bolometers and a substrate on which the plurality of bolometers are provided side by side. Each bolometer includes a first electrode, a second electrode provided across an inter-electrode region from the first electrode, a semiconducting carbon nanotube film connected to the first electrode and the second electrode, and a third electrode disposed apart from the semiconducting carbon nanotube film and capable of adjusting an electric field applied to the semiconducting carbon nanotube film in accordance with the characteristics of the semiconducting carbon nanotube film.SELECTED DRAWING: Figure 36

Description

[Technical Field]

[0001] The present disclosure relates to a bolometer array, a bolometer array unit, and a method of light detection. [Background technology]

[0002] It is widely known that bolometers are used to detect infrared radiation. For example, Patent Document 1 discloses a bolometer infrared detector having a carbon nanotube film containing semiconducting carbon tubes. Patent Document 1 also discloses that a plurality of elements can be arranged in an array to form a bolometer array. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Publication No. 2023-174027 Summary of the Invention [Problem to be solved by the invention]

[0004] In a bolometer having a semiconducting carbon nanotube film, the properties of the semiconducting carbon nanotube film change when the film is doped with a substance such as a protective film. In a bolometer array with multiple bolometers, the doping state of the semiconducting carbon nanotube film varies depending on the position of the bolometer. Such variations in the doping state cause variations in the carrier density of states, which in turn cause variations in the characteristics of the bolometer, such as the resistance value and the temperature coefficient of resistance, which may hinder improvement of detection performance.

[0005] An object of the present disclosure is to provide a bolometer array, a bolometer array unit, and a light detection method that solves the above-mentioned problems. [Means for solving the problem]

[0006] A bolometer array according to one embodiment of the present disclosure comprises a plurality of bolometers and a substrate on which the plurality of bolometers are arranged side by side, and each of the bolometers comprises a first electrode, a second electrode disposed on either side of the first electrode via an inter-electrode region, a semiconducting carbon nanotube film connected to the first electrode and the second electrode, and a third electrode disposed apart from the semiconducting carbon nanotube film and capable of adjusting an electric field applied to the semiconducting carbon nanotube film in accordance with the characteristics of the semiconducting carbon nanotube film.

[0007] A bolometer array unit according to an embodiment of the present disclosure includes a bolometer array according to an embodiment of the present disclosure and a control device capable of adjusting the voltage applied to the third electrode for each bolometer.

[0008] In a light detection method according to one embodiment of the present disclosure, a bolometer array includes a first bolometer and a second bolometer as bolometers, each of which includes a first electrode, a second electrode sandwiching an inter-electrode region between the first electrode and the second electrode, and a semiconducting carbon nanotube film connected to the first electrode and the second electrode, and an electric field applied to the semiconducting carbon nanotube film is adjusted according to the characteristics of the semiconducting carbon nanotube film. [Effects of the Invention]

[0009] According to the above aspect, it is possible to suppress the influence on the detection performance due to variations in the characteristics of the bolometer, such as the resistance value and the resistance temperature coefficient. [Brief explanation of the drawings]

[0010] [Figure 1] FIG. 1 is a schematic plan view illustrating an example of a bolometer array according to the present disclosure. [Figure 2] 1 is a schematic plan view showing an example of a bolometer included in a bolometer array according to the present disclosure. FIG. [Figure 3]3 is a schematic cross-sectional view showing an example of a bolometer included in the bolometer array according to the present disclosure, taken along the line AA in FIG. 2. FIG. [Figure 4] FIG. 2 is a schematic plan view including an inter-electrode region provided in a bolometer according to the present disclosure. [Figure 5] 10 is a flowchart illustrating an example of a method for manufacturing a bolometer array according to the present disclosure. [Figure 6] FIG. 2 is a schematic cross-sectional view showing an example of a bolometer array in the middle of being manufactured in step S1 of the method for manufacturing a bolometer array according to the present disclosure. [Figure 7] FIG. 10 is a schematic cross-sectional view showing an example of a bolometer array in the middle of being manufactured in step S2 of the method for manufacturing a bolometer array according to the present disclosure. [Figure 8] FIG. 10 is a schematic cross-sectional view showing an example of a bolometer array in the middle of being manufactured in step S3 of the method for manufacturing a bolometer array according to the present disclosure. [Figure 9] FIG. 10 is a schematic cross-sectional view showing an example of a bolometer array in the middle of being manufactured in step S4 of the manufacturing method of the bolometer array according to the present disclosure. [Figure 10] FIG. 10 is a schematic cross-sectional view showing an example of a bolometer array in the middle of being manufactured in step S5 of the method for manufacturing a bolometer array according to the present disclosure. [Figure 11] FIG. 10 is a schematic cross-sectional view showing an example of a bolometer array in the middle of being manufactured in step S6 of the manufacturing method of the bolometer array according to the present disclosure. [Figure 12] FIG. 10 is a schematic cross-sectional view showing an example of a bolometer array in the middle of being manufactured in step S7 of the manufacturing method of the bolometer array according to the present disclosure. [Figure 13] FIG. 10 is a schematic cross-sectional view showing an example of a bolometer array in the middle of being manufactured in step S8 of the manufacturing method of the bolometer array according to the present disclosure. [Figure 14] FIG. 10 is a schematic cross-sectional view showing an example of a bolometer array in the middle of being manufactured in step S9 of the manufacturing method of the bolometer array according to the present disclosure. [Figure 15]FIG. 10 is a schematic cross-sectional view showing an example of a bolometer array in the middle of being manufactured in step S10 of the manufacturing method of the bolometer array according to the present disclosure. [Figure 16] FIG. 10 is a schematic cross-sectional view showing an example of a bolometer array in the middle of being manufactured in step S11 of the manufacturing method of the bolometer array according to the present disclosure. [Figure 17] FIG. 10 is a schematic cross-sectional view showing an example of a bolometer array in the middle of being manufactured in step S12 of the method for manufacturing a bolometer array according to the present disclosure. [Figure 18] FIG. 10 is a schematic cross-sectional view showing an example of a bolometer array in the middle of being manufactured in step S13 of the manufacturing method of the bolometer array according to the present disclosure. [Figure 19] FIG. 2 is a schematic diagram including a third electrode of a bolometer included in a bolometer array according to the present disclosure. [Figure 20] FIG. 10 is a schematic longitudinal sectional view including a third electrode of a modified example of a bolometer included in the bolometer array according to the present disclosure. [Figure 21] FIG. 10 is a schematic longitudinal sectional view including a third electrode of a modified example of a bolometer included in the bolometer array according to the present disclosure. [Figure 22] FIG. 10 is a schematic longitudinal sectional view including a third electrode of a modified example of a bolometer included in the bolometer array according to the present disclosure. [Figure 23] FIG. 10 is a schematic longitudinal sectional view including a third electrode of a modified example of a bolometer included in the bolometer array according to the present disclosure. [Figure 24] FIG. 10 is a schematic longitudinal sectional view including a third electrode of a modified example of a bolometer included in the bolometer array according to the present disclosure. [Figure 25] FIG. 10 is a schematic longitudinal sectional view including a third electrode of a modified example of a bolometer included in the bolometer array according to the present disclosure. [Figure 26] FIG. 10 is a schematic longitudinal sectional view including a third electrode of a modified example of a bolometer included in the bolometer array according to the present disclosure. [Figure 27] FIG. 10 is a schematic cross-sectional view including a third electrode of a modified example of a bolometer included in the bolometer array according to the present disclosure. [Figure 28]FIG. 10 is a schematic cross-sectional view including a third electrode of a modified example of a bolometer included in the bolometer array according to the present disclosure. [Figure 29] FIG. 10 is a schematic cross-sectional view including a third electrode of a modified example of a bolometer included in the bolometer array according to the present disclosure. [Figure 30] FIG. 10 is a schematic cross-sectional view including a third electrode of a modified example of a bolometer included in the bolometer array according to the present disclosure. [Figure 31] FIG. 10 is a schematic cross-sectional view including a third electrode of a modified example of a bolometer included in the bolometer array according to the present disclosure. [Figure 32] FIG. 10 is a schematic cross-sectional view including a third electrode of a modified example of a bolometer included in the bolometer array according to the present disclosure. [Figure 33] 10A and 10B are schematic cross-sectional views showing modified examples of bolometers included in the bolometer array according to the present disclosure. [Figure 34] 10A and 10B are schematic cross-sectional views showing modified examples of bolometers included in the bolometer array according to the present disclosure. [Figure 35] FIG. 2 is a schematic diagram illustrating an example of a bolometer array unit according to the present disclosure. [Figure 36] 1 is a schematic cross-sectional view showing an example of a bolometer array according to the present disclosure. DETAILED DESCRIPTION OF THE INVENTION

[0011] Various embodiments according to the present disclosure will be described below with reference to the drawings.

[0012] First Embodiment A first embodiment of a bolometer array and a light detection method according to the present disclosure will be described below.

[0013] (bolometer array) As shown in FIG. 1, the bolometer array 1 includes a plurality of bolometers 2 and a substrate 3 . The bolometer array 1 is a device for detecting infrared rays, and is applied to, for example, an uncooled infrared sensor. Each bolometer 2 is an element that serves as a pixel of the bolometer array 1 . For example, the wavelength band of the infrared light detected by the bolometer 2 may include 1 to 100 μm. Furthermore, for example, the wavelength band of the infrared light detected by the bolometer 2 may include the terahertz band.

[0014] A plurality of bolometers 2 are arranged in the plane of the substrate 3. For example, the substrate 3 may comprise an integrated readout circuit for reading out the change in electrical resistance from each bolometer 2 . The bolometer array 1 may also include a sealing member that seals the area where the plurality of bolometers 2 are placed so that the periphery of the plurality of bolometers 2 is kept in a vacuum.

[0015] In the present disclosure, the bolometers 2 are arranged along the first direction and the second direction. For example, the bolometers 2 are arranged at equal intervals in the first direction and the second direction. The first direction and the second direction are directions within a plane in which the plurality of bolometers 2 are arranged. The first direction and the second direction are orthogonal to each other. There is no particular limitation on the installation orientation of the bolometer 2. However, for convenience of explanation, the direction perpendicular to the first direction and the second direction is defined as the up-down direction (third direction).

[0016] Each bolometer 2 absorbs components in the detection band from among the wavelength bands contained in the light to be detected, converts them into heat, and outputs the temperature change due to the heat as an electrical signal. In other words, each bolometer 2 is an element that performs photoelectric conversion.

[0017] The lower limit of the element size of each bolometer 2 is determined by the size limit in the microfabrication process. Furthermore, the upper limit of the element size of each bolometer 2 is determined by the limit size required to maintain a hollow structure. The size of such a bolometer 2 in each of the first and second directions is, for example, 10 μm to 50 μm.

[0018] (bolometer) 2 and 3, the bolometer 2 is disposed on a substrate 3. As shown in Fig. 3, the bolometer 2 includes a first electrode 10, a second electrode 11, a sensor portion 12, a third electrode 13, a wiring portion 14, an insulating film 15, and a protective film 16. Furthermore, as shown in Fig. 2, the bolometer 2 includes four support legs 17.

[0019] (Configuration of the first electrode) The first electrode 10 is an electrode for passing a current between the first electrode 10 and the second electrode 11 via the sensor portion 12 . 4, the first electrode 10 may include a first base end 10a and a plurality of first extending portions 10b. When viewed from above, each of the plurality of first extending portions 10b extends from the first base end 10a. These first extending portions 10b are formed to be parallel to one another. FIG. 3 is a cross-sectional view of a portion where the first extending portion 10b is not provided. The first electrode 10 is made of a conductive material such as aluminum, copper, gold, or TiAlV.

[0020] The size of the first extending portion 10b may be any size within an appropriate range from the viewpoint of both the feasibility of microfabrication and the effective reduction of resistance, and the number of the first extending portions 10b may be any number within an appropriate range from the viewpoint of both the feasibility of microfabrication and the effective reduction of resistance. For example, the width of each of the first extending portions 10b is 0.2 μm to 20 μm, and preferably 0.2 μm to 1 μm. For example, the length of each of the first extending portions 10b is 20% to 99% of the element size of the bolometer 2, and preferably 30% to 70%. For example, the number of the first extending portions 10b is 2 to 30, and preferably 5 to 15.

[0021] (Configuration of second electrode) The second electrode 11 is an electrode for passing a current between the second electrode 11 and the first electrode 10 via the sensor portion 12. 4, the second electrode 11 may include a second base end 11a and a plurality of second extending portions 11b. When viewed from above, each of the plurality of second extending portions 11b extends from the second base end 11a. These second extending portions 11b are formed so as to be parallel to one another. These second extending portions 11b are formed so as to be parallel to one another. FIG. 3 is a cross-sectional view of a portion where the second extending portion 11b is not provided. The second electrode 11 is made of a conductive material such as aluminum, copper, gold, or TiAlV.

[0022] The size of the second extending portion 11b may be any size within an appropriate range from the viewpoint of both the feasibility of microfabrication and the effective reduction of resistance, and the number of the second extending portions 11b may be any number within an appropriate range from the viewpoint of both the feasibility of microfabrication and the effective reduction of resistance. For example, the width of each of the second extending portions 11b is 0.2 μm to 20 μm, and preferably 0.2 μm to 1 μm. For example, the length of each of the second extending portions 11b is 20% to 99% of the element size of the bolometer 2, and preferably 30% to 70%. For example, the number of the second extending portions 11b is 2 to 30, and preferably 5 to 15.

[0023] (area between electrodes) 4, the first extension portion 10b of the first electrode 10 is disposed between the two second extension portions 11b of the second electrode 11. Furthermore, the second extension portion 11b of the second electrode 11 is disposed between the two first extension portions 10b of the first electrode 10. In other words, the first electrode 10 and the second electrode 11 have a structure in which the multiple first extension portions 10b and the multiple second extension portions 11b are interlocked as a whole. The first extending portion 10b is disposed with a gap between the second extending portion 11b and the second base end 11a. The second extending portion 11b is disposed with a gap between the first extending portion 10b and the first base end 10a. As a result, a meandering interelectrode region 18 is formed between the first electrode 10 and the second electrode 11 when viewed from above. In the present disclosure, the term "meandering" refers to a wavy shape, including extending in a wavy manner. For example, the inter-electrode region 18 extends in the first direction, then repeatedly bends from one side of the first direction to the other and from the other side of the first direction to one side, and then extends in the second direction.

[0024] For example, the width of the inter-electrode region 18 may be 500 nm or more and 3 μm or less. In the present disclosure, the "width of the interelectrode region 18" refers to the length of the interelectrode region 18 in the electrode opposing direction between the first electrode 10 and the second electrode 11.

[0025] (Sensor configuration) The sensor unit 12 receives infrared rays and detects an amount related to the intensity of the received infrared rays as a change in electrical resistance value. The sensor unit 12 has a function of converting the received infrared light into heat and changing the electrical resistance value between the first electrode 10 and the second electrode 11 in relation to the converted heat. The sensor section 12 includes a carbon nanotube film 12a and may also include a light receiving section 12b and a connection section 12c, which will be described later.

[0026] (Structure of carbon nanotube film) The carbon nanotube film 12a functions as an electrical resistor whose electrical resistance value changes in relation to heat. The carbon nanotube film 12a (semiconducting carbon nanotube film) is electrically connected to the first electrode 10 and the second electrode 11 in the inter-electrode region 18. Carbon nanotube film 12a is electrically connected to first electrode 10 and second electrode 11 across inter-electrode region 18 so as to extend along inter-electrode region 18. For example, the carbon nanotube film 12a may be filled over the entire inter-electrode region 18, thereby extending in a meandering shape in the inter-electrode region 18.

[0027] For example, the thickness of the carbon nanotube film 12a may be preferably 0.7 nm or more and 50 nm or less, more preferably 0.7 nm or more and 10 nm or less, and even more preferably 0.7 nm or more and 5 nm or less.

[0028] The carbon nanotube film 12a contains semiconducting carbon nanotubes. For example, the carbon nanotube film 12a may preferably contain 80% or more semiconducting carbon nanotubes, more preferably 90% or more semiconducting carbon nanotubes, and even more preferably 95% or more. At 95% or more, further improved properties can be expected. On the other hand, in the range of 90% to less than 95%, improved properties can be expected while reducing process costs.

[0029] For example, the carbon nanotube film 12a may contain semiconducting carbon nanotubes extracted by an electric field induced layer formation (ELF) method. The carbon nanotube film 12a may contain semiconducting carbon nanotubes extracted by other methods, but preferably contains semiconducting carbon nanotubes extracted by the ELF method. In this case, for example, a nonionic surfactant may be used in the ELF method for extracting the semiconducting carbon nanotubes, from the viewpoint of preventing adverse effects on the electrical characteristics of the bolometer 2.

[0030] For example, the length of one semiconducting carbon nanotube separated by the ELF method may be 10 nm to 1 μm.

[0031] For example, the semiconducting carbon nanotubes may be bundled in the carbon nanotube film 12a, and the length of the bundle may be about 100 nm to 10 μm.

[0032] For example, the carbon nanotube film 12a may include a carbon nanotube network film in which a plurality of carbon nanotubes are randomly oriented to form a network. In the present disclosure, the term "carbon nanotube network film" refers to a carbon nanotube film in which a plurality of carbon nanotubes are randomly oriented and form a network with each other.

[0033] The carbon nanotube film 12a is covered from above with a protective film 16. When the carbon nanotube film 12a is doped with a substance from the protective film 16, for example, its properties such as resistance value and temperature coefficient of resistance (TCR) change. The doping state of the carbon nanotube film 12 a varies depending on the position of the bolometer 2 on the substrate 3 . Therefore, the characteristics of such a carbon nanotube film 12 a differ depending on the position of the bolometer 2 on the substrate 3 .

[0034] (Configuration of the third electrode) The third electrode 13 is an electrode for adjusting the electric field applied to the carbon nanotube film 12a. 3, in this embodiment, the third electrode 13 is disposed below the carbon nanotube film 12a. That is, in this embodiment, the third electrode 13 is disposed so as to overlap the carbon nanotube film 12a when viewed from above (the third direction). The third electrode is made of a conductive material such as aluminum, copper, gold, or TiAlV.

[0035] The third electrode 13 is enclosed in a protective film 16 . In this embodiment, as will be described later, the protective film 16 includes a first lower-layer protective film 16a, a second lower-layer protective film 16b, a first upper-layer protective film 16c, and a second upper-layer protective film 16d. The third electrode 13 is provided on the first lower protective film 16a and is covered from above by the second lower protective film 16b. That is, in this embodiment, the third electrode 13 is located between the first lower protective film 16a and the second lower protective film 16b. Such third electrode 13 is formed in a plate shape with its front and back surfaces facing up and down, and is disposed apart from carbon nanotube film 12a without being in direct contact with it. The third electrode is insulated from the carbon nanotube film 12a by sandwiching the protective film 16 therebetween.

[0036] The third electrode 13 is connected to a control device 102 (described later) via a wiring section 14, and a voltage is applied to the third electrode 13 under the control of the control device 102. When a voltage is applied to third electrode 13, third electrode 13 forms an electric field with an electric field strength according to the voltage applied, that is, third electrode 13 adjusts the electric field applied to carbon nanotube film 12a. When the electric field strength applied to the carbon nanotube film 12a is changed, the properties of the carbon nanotube film 12a can be changed. That is, by adjusting the electric field applied to the carbon nanotube film 12a, the resistance value and temperature coefficient of resistance of the carbon nanotube film 12a can be adjusted. For example, the voltage applied to the third electrode 13 of each bolometer 2 can be adjusted individually, and variations in the characteristics of the carbon nanotube film 12a can be suppressed.

[0037] (Wiring configuration) 3, the wiring portion 14 includes a first contact portion 14a, a first wiring 14b, a second contact portion 14c, and a second wiring 14d. Also, as shown in FIG. 2, the wiring portion 14 includes a third contact portion 14e and a third wiring 14f.

[0038] The first contact portion 14a, the first wiring 14b, and the first electrode 10 may be an integral thin film. Similarly, the second contact portion 14c, the second wiring 14d, and the second electrode 11 may be an integral thin film. Similarly, the third contact portion 14e, the third wiring 14f, and the third electrode 13 may be an integral thin film. The wiring portion 14 is made of a conductive material such as aluminum, copper, gold, or TiAlV.

[0039] The first contact portion 14a is connected to the pad 3a of the substrate 3. The first contact portion 14a is disposed below the first electrode 10, the second electrode 11, and the carbon nanotube film 12a.

[0040] The first wiring 14b extends so as to connect the first electrode 10 and the first contact portion 14a. One end of the first wiring 14b is connected to the first base end 10a of the first electrode 10. The other end of the first wiring 14b is connected to the first contact portion 14a. The first wiring 14b is inclined upward from the other end to the one end.

[0041] Second contact portion 14c is connected to pad 3b of substrate 3. Second contact portion 14c is disposed below first electrode 10, second electrode 11, and carbon nanotube film 12a.

[0042] The second wiring 14d extends so as to connect the second electrode 11 and the second contact portion 14c. One end of the second wiring 14d is connected to the second base end 11a of the second electrode 11. The other end of the second wiring 14d is connected to the second contact portion 14c. The second wiring 14d is inclined upward from the other end to the one end.

[0043] 2, the third contact portion 14e is connected to the pad 3c of the substrate 3. The third contact portion 14e is disposed below the first electrode 10, the second electrode 11, and the carbon nanotube film 12a.

[0044] The third wiring 14f extends to connect the third electrode 13 and the third contact portion 14e. One end of the third wiring 14f is connected to the edge of the third electrode 13. The other end of the third wiring 14f is connected to the third contact portion 14e. The third wiring 14f is inclined toward the information as it goes from the other end to the one end.

[0045] (Insulating film composition) The insulating film 15 is formed to cover the upper surface of the substrate 3 . The insulating film 15 has openings that expose the pads 3a, 3b, and 3c.

[0046] (Protective film composition) Protective film 16 covers carbon nanotube film 12a, first electrode 10, second electrode 11, third electrode 13, and wiring portion 14 in an integrated manner. The protective film 16 is a thin film made of an insulating material such as silicon nitride, silicon oxide, or resin. Moreover, protective film 16 may include first lower protective film 16a and second lower protective film 16b located below carbon nanotube film 12a, first electrode 10, second electrode 11, and wiring portion . Protective film 16 may include a lower protective film consisting of one layer below carbon nanotube film 12a, first electrode 10, second electrode 11, and wiring portion 14. Moreover, the protective film 16 includes a first upper-layer protective film 16c and a second upper-layer protective film 16d located above the carbon nanotube film 12a, the first electrode 10, the second electrode 11, and the wiring portion . Protective film 16 may include an upper protective film consisting of one layer located above carbon nanotube film 12a, first electrode 10, second electrode 11, and wiring portion 14.

[0047] The first lower protective film 16a is located below the second lower protective film 16b. A cavity 19 is located below the first lower protective film 16a. The lower surface of the first lower protective film 16a forms the ceiling of the cavity 19. Second lower protective film 16b is formed on first lower protective film 16a and is in contact with the lower surfaces of carbon nanotube film 12a, first electrode 10, second electrode 11, and wiring portion . In addition, the third electrode 13 is disposed between the first lower protective film 16a and the second lower protective film 16b.

[0048] First upper protective film 16c is located below second upper protective film 16d and is in contact with the top surfaces of carbon nanotube film 12a, first electrode 10, second electrode 11, and wiring portion . The second upper protective film 16d is formed on the first upper protective film 16c. The second upper protective film 16d is in contact with the lower part of the connection part 12c of the sensor part 12 from above.

[0049] The support legs 17 support the first electrode 10, the second electrode 11, the third electrode 13, and the sensor unit 12 in the air so that the first electrode 10, the second electrode 11, the third electrode 13, and the sensor unit 12 are spaced apart from the substrate 3. As shown in FIG. 3 , a cavity 19 is formed between the first electrode 10, the second electrode 11, the third electrode 13, and the sensor unit 12. The support legs 17 are formed using, for example, a part of the protective film 16 .

[0050] The bolometer 2 may include, as the support legs 17, a first support leg 17a, a second support leg 17b, and a third support leg 17c. For example, the first support leg 17a includes the first wiring 14b therein, and the first wiring 14b can also function as a framework for the first support leg 17a. For example, the second support leg 17b includes the second wiring 14d therein, and the second wiring 14d can also function as a framework for the second support leg 17b. For example, the third support leg 17c includes the third wiring 14f therein, and the third wiring 14f can also function as a framework for the third support leg 17c. In this embodiment, the fourth support leg 17d does not contain any wiring. The fourth support leg 17d may contain a framework. By providing the fourth support leg 17d, the shape of the bolometer 2 viewed from above becomes closer to a symmetrical shape with respect to the center of the bolometer 2, and the supporting posture of the bolometer 2 becomes stable.

[0051] When viewed from above, first support leg 17a and second support leg 17b are arranged in a first direction with carbon nanotube film 12a sandwiched therebetween. Also, when viewed from above, third support leg 17c and fourth support leg 17d are arranged in the second direction with carbon nanotube film 12a sandwiched therebetween. Therefore, as shown in FIG. 2, the carbon nanotube film 12a is supported from four directions by four support legs 17.

[0052] (Method of manufacturing a bolometer array) As shown in FIG. 5, the method for manufacturing the bolometer array 1 includes, for example, steps S1 to S13.

[0053] First, as shown in FIG. 6, the manufacturer prepares a substrate 3 on which a metal layer that will become the pads 3a, 3b, and 3c is provided and whose surface is covered with an insulating film 15 (step S1).

[0054] 7, the manufacturer forms pads 3a and 3b on the substrate 3 (step S2). The manufacturer also forms pad 3c in the same manner as pads 3a and 3b. The manufacturer forms openings in parts of the insulating film 15 to expose the metal layer that will become pads 3a and 3b.

[0055] Following the execution of step S2, the manufacturer forms a sacrificial layer 30 on the insulating film 15 (step S3), as shown in Fig. 8. The sacrificial layer 30 is a layer that will be removed in a later process to form the cavity 19. The sacrificial layer 30 is made of, for example, organic polyimide.

[0056] Following the execution of step S3, the manufacturer forms a first lower protective film 16a on the sacrificial layer 30 as shown in FIG. 9 (step S4).

[0057] Following step S4, the manufacturer forms the third electrode 13 on the first lower protective film 16a (step S5), as shown in FIG. 10. The manufacturer also forms the third contact portion 14e and the third wiring 14f along with the third electrode 13. For example, the manufacturer forms a metal film that will become the third electrode 13, the third contact portion 14e, and the third wiring 14f, and then patterns the metal film to form the third electrode 13, the third contact portion 14e, and the third wiring 14f. For example, the third electrode 13, the third contact portion 14e, and the third wiring 14f are formed from a conductive material such as copper, gold, or TiAlV.

[0058] Following the execution of step S5, the manufacturer forms a second lower protective film 16b on the first lower protective film 16a, as shown in FIG. 11 (step S6). The manufacturer forms the second lower protective film 16b so as to cover from above the third electrode 13 and the like formed in step S4.

[0059] Following the execution of step S6, the manufacturer forms openings (cell contacts) in the first lower protective film 16a and the second lower protective film 16b to expose the pads 3a and 3b (step S7), as shown in Fig. 12. The manufacturer also forms openings (cell contacts) in the first lower protective film 16a and the second lower protective film 16b to expose the pads 3c.

[0060] Following the execution of step S7, the manufacturer forms a metal film 31 (step S8), as shown in Fig. 13. The metal film 31 is a thin metal film for forming the first electrode 10, the second electrode 11, the first contact portion 14a, the first wiring 14b, the second contact portion 14c, and the second wiring 14d. For example, the metal film 31 is formed of a conductive material such as copper, gold, or TiAlV.

[0061] Following the execution of step S8, the manufacturer patterns the metal film 31 (step S9), as shown in Fig. 14. For example, as shown in Fig. 14, the portions indicated by the arrows are removed by patterning the metal film 31. The first electrode 10, the second electrode 11, and the wiring portion 14 are formed by patterning the metal film 31. For example, a meandering inter-electrode region 18 is formed by patterning the metal film 31.

[0062] Following the execution of step S9, the manufacturer deposits the carbon nanotube film 12a as shown in FIG. 15 (step S10). The carbon nanotube film 12a is formed at least in the inter-electrode region 18.

[0063] Following the execution of step S10, the manufacturer forms a first upper protective film 16c as shown in FIG. 16 (step S11). Following the execution of step S11, the manufacturer forms a second upper protective film 16d as shown in FIG. 17 (step S12).

[0064] Following the execution of step S12, the manufacturer removes the sacrificial layer 30 (step S13), as shown in Fig. 18. For example, the sacrificial layer 30 may be removed using oxygen plasma. By removing the sacrificial layer 30, the bolometer array 1 with the cavities 19 is produced.

[0065] (Bolometer array operation) The operation of the bolometer array 1 of this embodiment will be described. When light to be detected is incident on the bolometer array 1, each of the bolometers 2 converts the light to be detected into heat. The generated heat warms the carbon nanotube film 12a. When the carbon nanotube film 12a is heated, the electrical resistance value of the carbon nanotube film 12a changes. The bolometer 2 electrically detects a change in the electrical resistance value of the carbon nanotube film 12a in the inter-electrode region 18 by passing a current between the first electrode 10 and the second electrode 11, and outputs the detection result.

[0066] Furthermore, in the bolometer array 1 of this embodiment, a voltage is applied to the third electrode 13 so that the characteristics of the bolometer 2 approach predetermined reference characteristics. When the voltage applied to the third electrode 13 is changed, there is a correlation between the change in the resistance value, which is one of the characteristics of the bolometer 2, and the change in the temperature coefficient of resistance, which is also one of the characteristics of the bolometer 2. Therefore, by adjusting the voltage applied to the third electrode 13, the resistance value and the temperature coefficient of resistance can be adjusted.

[0067] When multiple bolometers 2 are provided, the characteristics of each bolometer 2 (i.e., carbon nanotube film 12a) are different as described above. That is, the characteristics of each bolometer 2 are different from the preset reference characteristics (reference values ​​of resistance value and temperature coefficient of resistance). In this embodiment, a voltage is applied to the third electrode 13 so that the resistance value and the temperature coefficient of resistance become reference values ​​according to the bolometer 2 to which the third electrode 13 is provided. That is, in this embodiment, the voltage applied to the third electrode 13 of each bolometer 2 is set in accordance with the characteristics of the bolometer 2 .

[0068] A voltage is applied to the third electrode so that the resistance value and the resistance temperature coefficient become reference values, and the characteristics of each bolometer 2 are adjusted to the reference characteristics. Therefore, the detection results output from each bolometer 2 are less affected by variations in the characteristics of each bolometer 2.

[0069] In this way, the photodetection method using the bolometer array 1 of this embodiment adjusts the electric field applied to the carbon nanotube film 12a in accordance with the characteristics of the carbon nanotube film 12a. Therefore, the detection results obtained by the optical detection method using the bolometer array 1 of this embodiment are less affected by variations in the characteristics of the individual bolometers 2.

[0070] (Action and effect) The bolometer array 1 of this embodiment includes a plurality of bolometers 2 and a substrate 3 on which the plurality of bolometers 2 are arranged side by side. Each bolometer 2 includes a first electrode 10, a second electrode 11, a carbon nanotube film 12a, and a third electrode 13. The second electrode 11 is disposed on either side of the first electrode 10, sandwiching an inter-electrode region 18. The carbon nanotube film 12a is connected to the first electrode 10 and the second electrode 11. The third electrode 13 is disposed apart from the carbon nanotube film 12a. The third electrode 13 can adjust the electric field applied to the carbon nanotube film 12a according to the characteristics of the carbon nanotube film 12a.

[0071] The electric field applied to carbon nanotube film 12a changes depending on the voltage applied to third electrode 13. Furthermore, the properties of carbon nanotube film 12a, including the resistance value and the temperature coefficient of resistance, change depending on the electric field applied to carbon nanotube film 12a. Therefore, by changing the voltage applied to third electrode 13, the properties of carbon nanotube film 12a, including the resistance value and the temperature coefficient of resistance, can be adjusted. The bolometer array 1 of this embodiment includes the third electrode 13 as described above, and therefore the characteristics of the carbon nanotube film 12a, including the resistance value and the temperature coefficient of resistance, can be adjusted.

[0072] When a plurality of bolometers 2 are provided, the characteristics of each bolometer 2 (that is, the carbon nanotube film 12a) are different as described above. The bolometer array 1 of this embodiment can suppress such variations in the characteristics of the bolometers 2 by using the third electrodes 13. Therefore, the bolometer array 1 of this embodiment can suppress the influence on detection performance due to variations in the characteristics of the bolometers 2, such as the resistance value and the resistance temperature coefficient.

[0073] Furthermore, the photodetection method of this embodiment uses the bolometer array 1 to adjust the electric field applied to the carbon nanotube film 12a in accordance with the characteristics of the carbon nanotube film 12a. Therefore, the light detection method of this embodiment can suppress the influence on detection performance due to variations in the characteristics of the bolometer 2, such as the resistance value and the resistance temperature coefficient.

[0074] Each bolometer 2 also has support legs 17. The support legs 17 support the first electrode 10, the second electrode 11, and the carbon nanotube film 12a so that a cavity 19 is formed between the support legs 17 and the substrate 3. The bolometer 2 also includes, as support legs 17, a first support leg 17a containing a first wiring 14b connected to the first electrode 10, a second support leg 17b containing a second wiring 14d connected to the second electrode 11, and a third support leg 17c containing a third wiring 14f connected to the third electrode 13.

[0075] The bolometer array 1 and the light detection method of this embodiment support the carbon nanotube film 12a with three or more support legs, and therefore the bolometer array 1 and the light detection method of this embodiment can stably support the carbon nanotube film 12a.

[0076] Furthermore, each bolometer 2 includes, as the support leg 17, a fourth support leg 17d that does not include any wiring. The bolometer array 1 and the light detection method of this embodiment support the carbon nanotube film 12a with four or more support legs, which allows the bolometer array 1 and the light detection method of this embodiment to support the carbon nanotube film 12a more stably.

[0077] The bolometers 2 are arranged in a first direction and a second direction perpendicular to the first direction. When viewed from above perpendicular to the first and second directions, the first support leg 17a and the second support leg 17b are arranged in the first direction with the carbon nanotube film 12a sandwiched therebetween. When viewed from above, the third support leg 17c and the fourth support leg 17d are arranged in the second direction with the carbon nanotube film 12a sandwiched therebetween.

[0078] In the bolometer array 1 and the light detection method of this embodiment, the shape of the bolometer 2 viewed from above becomes closer to a symmetrical shape with respect to the center of the bolometer 2. Therefore, the bolometer array 1 and the light detection method of this embodiment can stabilize the supporting posture of the carbon nanotube film 12a.

[0079] Moreover, third electrode 13 is disposed so as to overlap at least a portion of carbon nanotube film 12a when viewed from above. In the bolometer array 1 and light detection method of this embodiment, the third electrode 13 and the carbon nanotube film 12a are arranged to overlap each other, so that the shape of the bolometer 2 when viewed from above can be made smaller.

[0080] (Variation) As shown in FIG. 19, in the first embodiment, the configuration in which the third electrode 13 is located below the carbon nanotube film 12a has been described. For example, the third electrode 13 may be disposed above the carbon nanotube film 12a as shown in Fig. 20. In this case, the third electrode 13 may be disposed between the first upper protective film 16c and the second upper protective film 16d, for example.

[0081] 21, third electrodes 13 may be disposed both above and below carbon nanotube film 12a. In other words, bolometer 2 may include a plurality of third electrodes 13 arranged in the vertical direction with carbon nanotube film 12a sandwiched therebetween. By disposing third electrode 13 both above and below carbon nanotube film 12a, the electric field strength of the electric field applied to carbon nanotube film 12a becomes stronger than when there is only one third electrode 13.

[0082] 22, third electrode 13 may be arranged so that it partially overlaps second base end 11a of second electrode 11 when viewed from above. By arranging third electrode 13 so that it overlaps second electrode 11 when viewed from above, the distance between third electrode 13 and second electrode 11 is shorter than when third electrode 13 is arranged at the center between first base end 10a of first electrode 10 and second base end 11a of second electrode 11. Therefore, with the configuration shown in FIG. 22, the electric field strength of the electric field applied to carbon nanotube film 12a is increased. 22, third electrode 13 may be disposed above carbon nanotube film 12a, or may be disposed below carbon nanotube film 12a. In addition, the third electrode 13 may be disposed so as to partially overlap the first base end 10a of the first electrode 10 when viewed from above.

[0083] As shown in FIG. 23, the third electrode 13 may be disposed so as to entirely overlap the second base end 11a of the second electrode 11 when viewed from above. 23, third electrode 13 may be disposed below carbon nanotube film 12a, or may be disposed above carbon nanotube film 12a.

[0084] 24 to 26, the third electrode 13 may be formed to have a length that extends from the first base end 10a of the first electrode 10 to the second base end 11a of the second electrode 11 when viewed from above. In such a case, the third electrode 13 overlaps both the first base end 10a of the first electrode 10 and the second base end 11a of the second electrode 11 when viewed from above. Therefore, according to the configurations shown in FIGS. 24 and 25, the electric field strength of the electric field applied to the carbon nanotube film 12a is increased. As shown in FIG. 24, the third electrode 13 may be disposed above the carbon nanotube film 12a. As shown in FIG. 25, the third electrode 13 may be disposed below the carbon nanotube film 12a. As shown in FIG. 26, the third electrodes 13 may be disposed both above and below the carbon nanotube film 12a.

[0085] As shown in FIG. 27, the third electrode 13 may be disposed alongside the carbon nanotube film 12a in the second direction. In this way, by arranging the third electrode 13 alongside the carbon nanotube film 12a in the second direction, the size of the bolometer 2 in the vertical direction can be reduced.

[0086] As shown in FIG. 28, the third electrodes 13 may be disposed on both sides of the carbon nanotube film 12a in the second direction. According to the configuration shown in FIG. 28, the electric field strength of the electric field applied to the carbon nanotube film 12a is stronger than that of the configuration shown in FIG. 27 in which only one third electrode 13 is provided.

[0087] 29, the third electrode 13 may be disposed close to the second base end 11a of the second electrode 11. According to the configuration shown in No. 29, the electric field strength of the electric field applied to the carbon nanotube film 12a is stronger than when the third electrode 13 is positioned at the center position between the first base end 10a of the first electrode 10 and the second base end 11a of the second electrode 11. The third electrode may be disposed closer to the first base end 10a of the first electrode 10. Also, as shown in Figure 30, the third electrodes 13 may be arranged on both sides of the carbon nanotube film 12a in the second direction, each close to the first base end 10a of the first electrode 10 or the second base end 11a of the second electrode 11.

[0088] Also, as shown in Figure 31, the width of the third electrode 13 in a direction (first direction) perpendicular to the second direction may be greater than the distance between the first base end 10a of the first electrode 10 and the second base end 11a of the second electrode 11 (the width of the inter-electrode region 18). According to the configuration shown in Figure 31, the electric field strength of the electric field applied to the carbon nanotube film 12a is stronger than that of the configuration shown in Figure 27 because it is closer to both the first base end 10a of the first electrode 10 and the second base end 11a of the second electrode 11. As shown in FIG. 32, the third electrodes 13 may be disposed on both sides of the carbon nanotube film 12a in the second direction.

[0089] Second Embodiment A second embodiment of a bolometer array and a light detection method according to the present disclosure will be described below. In the description of this embodiment, the description of the same parts as those in the first embodiment will be omitted or simplified.

[0090] As shown in FIG. 33, the sensor section 12 of the bolometer 2 may include a light receiving section 12b and a connection section 12c.

[0091] The light receiving portion 12b is a portion at the top of the bolometer 2, separated from the carbon nanotube film 12a, and spreading out like a roof above the carbon nanotube film 12a. Light receiving portion 12b covers at least a part of the surface (one surface of substrate 3) on which first electrode 10, second electrode 11 and carbon nanotube film 12a are provided. For example, light receiving portion 12b may be formed to a size that covers first electrode 10, second electrode 11, and carbon nanotube film 12a when viewed from above. Also, light receiving portion 12b may be formed to a size that covers wiring portion 14 in addition to first electrode 10, second electrode 11, and carbon nanotube film 12a when viewed from above.

[0092] For example, the light receiving portion 12b is formed in a plate shape except for the portion where the connecting portion 12c is located. The light receiving portion 12b may also be made of a material such as silicon nitride or titanium nitride that has the function of converting received infrared light into heat.

[0093] The outer peripheral shape of the light receiving portion 12b may be rectangular or square. The light receiving portion 12b may have a through hole that penetrates in the vertical direction.

[0094] The connecting portion 12c extends from the light receiving portion 12b toward the carbon nanotube film 12a. The connecting portion 12c supports the light receiving portion 12b above the first electrode 10, the second electrode 11, and the carbon nanotube film 12a. The upper end of the connection portion 12c is thermally connected to the light receiving portion 12b. The lower end of connecting portion 12c is in contact with the surface of protective film 16, and is thereby thermally connected to carbon nanotube film 12a via protective film 16. Furthermore, connecting portion 12c may be further thermally connected to first electrode 10 and second electrode 11 via protective film 16. Specifically, the lower end of connection portion 12c may be in contact with a portion of the upper surface of protective film 16 that extends across the upper surface of carbon nanotube film 12a, the upper surface of first electrode 10, and the upper surface of second electrode 11.

[0095] For example, the connecting portion 12c may have an upper surface that is recessed downward from the light receiving portion 12b and a lower surface that protrudes downward relative to the upper surface, thereby extending recessed toward the carbon nanotube film 12a. For example, the connecting portion 12c may be integrally formed with the light receiving portion 12b using the same material.

[0096] The bolometer 2 may also include a reflective film 20 . For example, the position of the light receiving section 12b in the vertical direction may be such that the distance from the reflective film 20 to the light receiving section 12b is one-fourth of the target absorption wavelength. The position of the light receiving section 12b in the vertical direction may be such that the distance from the reflective film 20 to the light receiving section 12b is an integer multiple of 2 or more of one-fourth of the target absorption wavelength. The light receiving unit 12b may include a metal layer and two insulating layers sandwiching the metal layer in the vertical direction. In this case, for example, the distance from the reflective film 20 to the light receiving unit 12b is preferably such that the distance from the upper surface 20a of the reflective film 20 to the lower surface of the metal layer is one-fourth of the target absorption wavelength. The distance from the reflective film 20 to the light receiving section 12b may be such that the distance from the upper surface 20a of the reflective film 20 to the lower surface of the metal layer is an integer multiple of 2 or more of one-fourth of the target absorption wavelength.

[0097] When light to be detected is incident on the bolometer 2 of this embodiment, the light receiving portion 12b converts the light to be detected into heat. The heat generated in the light receiving portion 12b is transmitted through the connecting portion 12c and the protective film 16 to heat the carbon nanotube film 12a. When the carbon nanotube film 12a is heated, the electrical resistance value of the carbon nanotube film 12a changes.

[0098] The bolometer 2 of this embodiment receives light to be detected by the light receiving portion 12b and converts the light into heat. Therefore, the bolometer 2 of this embodiment can ensure a wide light receiving area for light to be detected even when the third electrode 13 is disposed and the light receiving area inside the bolometer 2 is reduced. Similarly, even if the inter-electrode region 18 has a meandering shape, a large light receiving area for the light to be detected can be ensured.

[0099] (Variation) As shown in FIG. 34, the bolometer 2 may include an absorbing member 40 on the upper surface of the light receiving section 12b, which absorbs light in a wavelength band including the target absorption wavelength. For example, a thin film member that utilizes plasmon absorption can be used as the absorbing member 40. Plasmon absorption is the action of metal particles absorbing light of a specific wavelength. For example, a thin film member whose absorption wavelength can be changed by controlling the structure of a patch antenna can be used as a thin film member that utilizes plasmon absorption. Furthermore, a metal matching film, whose absorption wavelength can be changed by changing the thickness of the metal thin film, can be used as a thin film member that utilizes plasmon absorption. Furthermore, a thin film member in which the absorption wavelength can be changed by graphene can be used as a thin film member that utilizes plasmon absorption.

[0100] <Third embodiment> Hereinafter, an embodiment of the bolometer array unit according to the present disclosure will be described as a third embodiment. In the description of this embodiment, the description of the same parts as those in the first embodiment will be omitted or simplified.

[0101] As shown in FIG. 35, the bolometer array unit 100 of this embodiment includes a bolometer array 101 and a control device 102. The bolometer array 101 may be, for example, the bolometer array 1 described in the above embodiment. However, the bolometer array 101 may be any bolometer array that includes the carbon nanotube film 12a and the third electrode 13.

[0102] The control device 102 can adjust the voltage applied to the third electrode 13 for each bolometer 2. For example, the control device 102 may store in advance, as a table, voltage values ​​for setting the characteristics of the bolometer 2 as reference characteristics. The control device 102 adjusts the voltage applied to the third electrode 13 for each bolometer 2 based on the stored table.

[0103] It should be noted that the characteristics of the bolometer 2 may change over time. For this reason, the control device 102 may perform a maintenance operation to acquire the characteristics of the bolometer 2. The control device 102 may update the table using the characteristics of the bolometer 2 obtained through a maintenance operation.

[0104] <Fourth embodiment> A fourth embodiment of a bolometer array and a light detection method according to the present disclosure will now be described.

[0105] As shown in FIG. 36, the bolometer array 200 includes a plurality of bolometers 201 and a substrate 202 on which the plurality of bolometers 201 are arranged side by side. Each bolometer 201 includes a first electrode 203 , a second electrode 204 , a semiconducting carbon nanotube film 205 , and a third electrode 206 . The second electrode 204 is provided on either side of the first electrode 203 across the inter-electrode region. The semiconducting carbon nanotube film 205 is connected to the first electrode 203 and the second electrode 204 . The third electrode 206 is disposed at a distance from the semiconducting carbon nanotube film 205. The third electrode 206 can adjust the electric field applied to the semiconducting carbon nanotube film 205 in accordance with the characteristics of the semiconducting carbon nanotube film 205.

[0106] The photodetection method of this embodiment uses the bolometer array 200 to adjust the electric field applied to the semiconducting carbon nanotube film 205 in accordance with the characteristics of the semiconducting carbon nanotube film 205 .

[0107] The bolometer array 200 and the light detection method of this embodiment are provided with the third electrode 206, and are capable of adjusting the properties of the semiconducting carbon nanotube film 205, including the resistance value and the temperature coefficient of resistance. Therefore, the bolometer array 200 and the light detection method of this embodiment can suppress the influence on the detection performance due to variations in the characteristics of the bolometers 2, such as the resistance value and the resistance temperature coefficient.

[0108] Although the embodiments of the present disclosure have been described above, these embodiments are provided as examples and are not intended to limit the scope of the present disclosure. These embodiments can be implemented in various other forms, and various omissions, substitutions, and modifications can be made without departing from the spirit of the present disclosure. Furthermore, each embodiment can be combined with other embodiments as appropriate.

[0109] Some or all of the above-described embodiments can be described as, but are not limited to, the following supplementary notes.

[0110] (Appendix 1) a plurality of bolometers; a substrate on which a plurality of the bolometers are arranged; Equipped with Each of the bolometers comprises: A first electrode; a second electrode provided across an inter-electrode region from the first electrode; a semiconducting carbon nanotube film connected to the first electrode and the second electrode; a third electrode that is spaced apart from the semiconducting carbon nanotube film and that can adjust the electric field applied to the semiconducting carbon nanotube film in accordance with the characteristics of the semiconducting carbon nanotube film; Equipped with Bolometer array.

[0111] (Appendix 2) Each of the bolometers comprises: a support leg that supports the first electrode, the second electrode, and the semiconducting carbon nanotube film so that a cavity is formed between the support leg and the substrate; The support legs include: a first support leg including a first wiring connected to the first electrode; a second support leg including a second wiring connected to the second electrode; a third support leg including a third wiring connected to the third electrode; Equipped with 1. A bolometer array as described in Appendix 1.

[0112] (Appendix 3) Each of the bolometers includes a fourth support leg that does not include a wiring as the support leg. bolometer array as described in Appendix 2.

[0113] (Appendix 4) the bolometers are arranged in a first direction and a second direction perpendicular to the first direction, When viewed from a third direction perpendicular to the first and second directions, the first support leg and the second support leg are arranged in the first direction with the semiconducting carbon nanotube film sandwiched therebetween, and the third support leg and the fourth support leg are arranged in the second direction with the semiconducting carbon nanotube film sandwiched therebetween. bolometer array as described in Appendix 3.

[0114] (Appendix 5) the bolometers are arranged in a first direction and a second direction perpendicular to the first direction, the third electrode is disposed so as to at least partially overlap the semiconducting carbon nanotube film when viewed from a third direction perpendicular to the first direction and the second direction; 5. A bolometer array according to any one of appendices 1 to 4.

[0115] (Appendix 6) When viewed from the third direction, the third electrode is disposed so as to at least partially overlap with at least one of the first electrode and the second electrode. bolometer array as described in Appendix 5.

[0116] (Appendix 7) each of the bolometers includes a plurality of the third electrodes arranged in the third direction with the semiconducting carbon nanotube film sandwiched therebetween; 7. The bolometer array of claim 5 or 6.

[0117] (Appendix 8) the bolometers are arranged in a first direction and a second direction perpendicular to the first direction, the first electrode and the second electrode are arranged in the first direction with the semiconducting carbon nanotube film sandwiched therebetween, the third electrode is disposed alongside the semiconducting carbon nanotube film in the second direction. 5. A bolometer array according to any one of appendices 1 to 4.

[0118] (Appendix 9) a width of the third electrode in the first direction is greater than an inter-electrode distance between the first electrode and the second electrode; 10. The bolometer array of claim 8.

[0119] (Appendix 10) A bolometer array according to any one of Supplementary Notes 1 to 9; a control device capable of adjusting a voltage to be applied to the third electrode for each of the bolometers; Equipped with Bolometer array unit.

[0120] (Appendix 11) the bolometer array includes a first bolometer and a second bolometer as bolometers; Each of the bolometers A first electrode; a second electrode provided across an inter-electrode region from the first electrode; a semiconducting carbon nanotube film connected to the first electrode and the second electrode; Equipped with adjusting the electric field applied to the semiconducting carbon nanotube film according to the characteristics of the semiconducting carbon nanotube film; Light detection methods.

[0121] (Appendix 12) each of the bolometers is provided with a third electrode that is spaced apart from the semiconducting carbon nanotube film and that is capable of adjusting an electric field applied to the semiconducting carbon nanotube film in accordance with the characteristics of the semiconducting carbon nanotube film; 12. The optical detection method of claim 11.

[0122] (Appendix 13) Each of the bolometers comprises: a support leg that supports the first electrode, the second electrode, and the semiconducting carbon nanotube film so that a cavity is formed between the support leg and a substrate; The support legs include: a first support leg including a first wiring connected to the first electrode; a second support leg including a second wiring connected to the second electrode; a third support leg including a third wiring connected to the third electrode; Equipped with 13. The optical detection method of claim 12.

[0123] (Appendix 14) Each of the bolometers includes a fourth support leg that does not include a wiring as the support leg. 14. The optical detection method of claim 13.

[0124] (Appendix 15) the bolometers are arranged in a first direction and a second direction perpendicular to the first direction, When viewed from a third direction perpendicular to the first and second directions, the first support leg and the second support leg are arranged in the first direction with the semiconducting carbon nanotube film sandwiched therebetween, and the third support leg and the fourth support leg are arranged in the second direction with the semiconducting carbon nanotube film sandwiched therebetween. 15. The optical detection method of claim 14.

[0125] (Appendix 16) the bolometers are arranged in a first direction and a second direction perpendicular to the first direction, the third electrode is disposed so as to at least partially overlap the semiconducting carbon nanotube film when viewed from a third direction perpendicular to the first direction and the second direction; 16. The light detection method according to any one of appendices 12 to 15.

[0126] (Appendix 17) When viewed from the third direction, the third electrode is disposed so as to at least partially overlap with at least one of the first electrode and the second electrode. 17. The optical detection method of claim 16.

[0127] (Appendix 18) each of the bolometers includes a plurality of the third electrodes arranged in the third direction with the semiconducting carbon nanotube film sandwiched therebetween; 18. The optical detection method of claim 16 or 17.

[0128] (Appendix 19) the bolometers are arranged in a first direction and a second direction perpendicular to the first direction, the first electrode and the second electrode are arranged in the first direction with the semiconducting carbon nanotube film sandwiched therebetween, the third electrode is disposed alongside the semiconducting carbon nanotube film in the second direction. 16. The light detection method according to any one of appendices 12 to 15.

[0129] (Appendix 20) a width of the third electrode in the first direction is greater than an inter-electrode distance between the first electrode and the second electrode; 19. The optical detection method of claim 19.

[0130] (Appendix 21) 21. The light detection method according to any one of claims 12 to 20, wherein the voltage applied to the third electrode is adjusted for each of the bolometers. [Explanation of symbols]

[0131] 1 Bolometer array 2 Bolometer 3. Circuit Board 3a pad 3b pad 3c pad 10 1st electrode 11 Second electrode 12 Sensor section 12a Carbon nanotube film (semiconducting carbon nanotube film) 12b Light receiving part 12c connection 13 Third electrode 14 Wiring section 14a First contact part 14b First wiring 14c Second contact part 14d Second wiring 14e Third Contact 14f 3rd wiring 15 insulating film 16 Protective film 16a 1st lower layer protective film 16b 2nd lower layer protective film 16c 1st upper layer protective film 16d 2nd upper layer protective film 17 Support legs 17a 1st support leg 17b Second support leg 17c 3rd support leg 17d 4th support leg 18 Interelectrode area 19 Cavity 100 Bolometer Array Unit 101 Bolometer Array 102 Control device 200 bolometer array 201 Bolometer 202 Substrate 203 1st electrode 204 2nd electrode 205 Semiconducting carbon nanotube film 206 3rd electrode

Claims

1. a plurality of bolometers; a substrate on which a plurality of the bolometers are arranged; Equipped with Each of the bolometers comprises: A first electrode; a second electrode provided across an inter-electrode region from the first electrode; a semiconducting carbon nanotube film connected to the first electrode and the second electrode; a third electrode that is spaced apart from the semiconducting carbon nanotube film and that can adjust the electric field applied to the semiconducting carbon nanotube film in accordance with the characteristics of the semiconducting carbon nanotube film; Equipped with Bolometer array.

2. Each of the bolometers comprises: a support leg that supports the first electrode, the second electrode, and the semiconducting carbon nanotube film so that a cavity is formed between the support leg and the substrate; The support legs include: a first support leg including a first wiring connected to the first electrode; a second support leg including a second wiring connected to the second electrode; a third support leg including a third wiring connected to the third electrode; Equipped with 2. The bolometer array of claim 1.

3. Each of the bolometers includes a fourth support leg that does not include a wiring as the support leg.

3. The bolometer array of claim 2.

4. the bolometers are arranged in a first direction and a second direction perpendicular to the first direction, When viewed from a third direction perpendicular to the first direction and the second direction, the first support leg and the second support leg are arranged in the first direction with the semiconducting carbon nanotube film sandwiched therebetween, and the third support leg and the fourth support leg are arranged in the second direction with the semiconducting carbon nanotube film sandwiched therebetween.

4. The bolometer array of claim 3.

5. the bolometers are arranged in a first direction and a second direction perpendicular to the first direction, the third electrode is disposed so as to at least partially overlap the semiconducting carbon nanotube film when viewed from a third direction perpendicular to the first direction and the second direction; 5. The bolometer array according to claim 1.

6. When viewed from the third direction, the third electrode is disposed so as to at least partially overlap with at least one of the first electrode and the second electrode.

6. The bolometer array of claim 5.

7. each of the bolometers includes a plurality of the third electrodes arranged in the third direction with the semiconducting carbon nanotube film sandwiched therebetween; 6. The bolometer array of claim 5.

8. the bolometers are arranged in a first direction and a second direction perpendicular to the first direction, the first electrode and the second electrode are arranged in the first direction with the semiconducting carbon nanotube film sandwiched therebetween, the third electrode is disposed alongside the semiconducting carbon nanotube film in the second direction; 5. The bolometer array according to claim 1.

9. A bolometer array according to any one of claims 1 to 4; a control device capable of adjusting a voltage applied to the third electrode for each of the bolometers; Equipped with Bolometer array unit.

10. the bolometer array includes a first bolometer and a second bolometer as bolometers; Each of the bolometers A first electrode; a second electrode provided across an inter-electrode region from the first electrode; a semiconducting carbon nanotube film connected to the first electrode and the second electrode; Equipped with adjusting the electric field applied to the semiconducting carbon nanotube film according to the characteristics of the semiconducting carbon nanotube film; Light detection methods.

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