Manufacturing apparatus for display panel

Abstract

To provide a manufacturing apparatus for a display panel, capable of applying a laser beam accurately only to a micro-LED and increasing the uniformity of the applied pressure.SOLUTION: A manufacturing apparatus for a display panel is provided. The manufacturing apparatus for a display panel according to an embodiment includes a support part to which a display substrate is fixed, a mask that defines an opening part corresponding to a transmission region of the laser beam, a pressing part including a pressing member that presses the mask, and a laser irradiation part that is disposed on a front surface of the support part and irradiates the display substrate with laser light through the mask. The mask includes a base layer that transmits the laser light, and a light-blocking pattern layer disposed on the base layer and including the opening part.SELECTED DRAWING: Figure 7

Description

[Technical Field]

[0001] The present invention relates to a display panel manufacturing apparatus. [Background technology]

[0002] Micro LED is an ultra-small inorganic light-emitting material that emits light by itself without a backlight. Specifically, Micro LED is about one-tenth the length and one-hundredth the area of ​​an organic light-emitting diode chip. For example, Micro LED refers to an ultra-small LED with width, length, and height ranging from about 10μm to 100μm.

[0003] Micro LEDs can be manufactured by growing multiple chips on a growth substrate such as a wafer using an epitaxial process, etc. The manufactured micro LEDs are usually transferred to an intermediate substrate and then transferred to a target substrate to be used as a display module.

[0004] The micro LED transfer process can use a laser transfer method in which a laser beam is irradiated onto the back of the relay substrate (multiple micro LEDs are arranged on the front of the relay substrate) to transfer the micro LEDs on the relay substrate to the target substrate.

[0005] However, the laser transfer method has a problem in that the laser beam irradiated onto the backside of the relay substrate passes through the areas between the micro LEDs and the outer area of ​​the relay substrate, and is therefore also applied to the target substrate in areas other than the micro LEDs. When the laser beam is applied to the target substrate, the temperature of the target substrate rises, causing damage to the target substrate. [Prior art documents] [Patent documents]

[0006] [Patent Document 1] Patent No. 6691576 specification [Patent Document 2] Korean Patent Publication No. 2022-0097716 [Patent Document 3] U.S. Patent Application Publication No. 2021-0398938 Summary of the Invention [Problem to be solved by the invention]

[0007] The problem to be solved by the present invention is to provide a display panel manufacturing device that can reflect a laser beam irradiated to the surrounding area other than the micro LED, so that the laser beam can be accurately applied only to the micro LED, and can increase the uniformity of the pressure force generated by pressing the laser-transmitting member.

[0008] The objectives of the present invention are not limited to those mentioned above, and other technical objectives not mentioned will be clearly understood by those skilled in the art from the following description. [Means for solving the problem]

[0009] According to one embodiment of the present invention, a display panel manufacturing apparatus includes a support portion on which a display substrate is mounted, a mask defining an opening corresponding to a transmission region of a laser beam and a pressure portion including a pressure member for pressing the mask, and a laser irradiation portion disposed in front of the support portion and irradiating the display substrate with laser light through the mask, the mask including a base layer that transmits the laser light and a light-shielding pattern layer disposed on the base layer and including the opening.

[0010] The pressure member may be disposed on the mask, include a light-transmitting member and an elastic member overlapping each other in a thickness direction, form a sealed space between the light-transmitting member and the elastic member, and further include a gas pressure regulator for adjusting the gas pressure in the sealed space.

[0011] The elastic member is disposed on the mask, and when the gas pressure in the sealed space increases, the elastic member expands to pressurize the mask.

[0012] The pressurizing member may further include a gas conduit connected between the gas pressure regulator and the sealed space.

[0013] The mask may be a photomask, and the photomask may include a transparent or semitransparent flat plate-shaped base layer and a light-blocking pattern layer disposed on the base layer and having a light-blocking pattern with light-blocking properties.

[0014] The photomask may be disposed opposite the display substrate.

[0015] The photomask may be disposed so as to face the laser irradiation unit.

[0016] The light-blocking pattern may include openings formed in areas corresponding to display areas where light emitting elements are arranged on the display substrate.

[0017] The light-blocking pattern may include openings formed in areas corresponding to the light-emitting elements arranged on the display substrate.

[0018] The mask may further include a mounting member attached to an outer surface of the mask to support the mask.

[0019] The mask may be a metal mask, and the metal mask assembly may include a transparent or semi-transparent flat plate-shaped light-transmitting layer and a reflective metal mask having an opening disposed on the base layer.

[0020] The opening may be formed in a region corresponding to a display region where light emitting elements are arranged on the display substrate.

[0021] The openings may be formed in areas corresponding to light emitting elements arranged on the display substrate.

[0022] According to an embodiment, an apparatus for manufacturing a display panel includes: a support portion on which a display substrate is mounted; a light-transmitting plate disposed in front of the support portion; a pressurizing member for pressing the light-transmitting plate; a pressure unit including a reflective mask disposed on the light-transmitting plate and defining openings corresponding to transmission regions of a laser beam; and a light-absorbing member for absorbing the laser beam reflected by the reflective mask; and a laser irradiation unit disposed in front of the light-transmitting plate and irradiating the laser beam onto the display substrate through the light-transmitting plate, wherein the reflective mask is disposed at an angle to an upper surface of the light-transmitting plate, and the light-absorbing member is disposed parallel to the mask.

[0023] The pressure applying unit may include an optical member disposed between the reflective mask and the light absorbing member, for focusing light onto the light absorbing member.

[0024] The opening may be formed in a region corresponding to a display region where light emitting elements are arranged on the display substrate.

[0025] The openings may be formed in areas corresponding to light emitting elements arranged on the display substrate.

[0026] The opening may have a first side and a second side opposite to the first side, and may be a trapezoid or a parallelogram in which a first angle formed between the first side and one surface of the reflective mask and an angle formed between the one surface of the reflective mask and the second side are different from each other.

[0027] The opening may include a first side and a second side opposite to the first side, and may be an isosceles trapezoid in which a first angle formed between the first side and one surface of the reflective mask is the same as an angle formed between the one surface of the reflective mask and the second side, or the first side and the second side may have curvature.

[0028] According to an embodiment, an apparatus for manufacturing a display panel includes: a support portion on which a display substrate is mounted; a light-transmitting plate disposed in front of the support portion; a pressurizing member for pressing the light-transmitting plate; a pressurizing unit including a reflective mask disposed on the light-transmitting plate and defining openings corresponding to transmission regions of a laser beam; and a light-absorbing member for absorbing the laser beam reflected by the reflective mask; and a laser irradiation unit disposed in front of the light-transmitting plate and irradiating laser beams onto the display substrate through the light-transmitting plate, wherein the laser beams may be divergent beams. [Effects of the Invention]

[0029] According to the display panel manufacturing apparatus of the embodiment, the laser beam irradiated to the peripheral area other than the micro LEDs is reflected by the reflective member of the light-transmitting plate, so that the laser beam can be applied precisely only to the micro LEDs, and the uniformity of the pressure applied to the micro LEDs can be improved, thereby preventing manufacturing defects in the target substrate and the display panel and improving manufacturing efficiency.

[0030] The effects of the embodiments are not limited to the above examples, and a wider variety of effects are included in this specification. [Brief explanation of the drawings]

[0031] [Figure 1] 1 is a plan view of a display device according to an embodiment. [Figure 2] FIG. 2 is a plan view schematically illustrating a light-emitting region of each pixel according to an embodiment. [Figure 3] FIG. 10 is a plan view schematically illustrating a light-emitting region of each pixel according to another embodiment. [Figure 4] 3 is a cross-sectional view according to one embodiment, schematically illustrating a cross section taken along line AA' in FIG. 2. FIG. [Figure 5] FIG. 5 is an enlarged view schematically illustrating the first light-emitting region of FIG. 4. [Figure 6] FIG. 6 is a cross-sectional view specifically showing the light-emitting element of FIG. 5. [Figure 7]1 is a side cross-sectional view schematically illustrating a display panel manufacturing apparatus according to an embodiment. [Figure 8] FIG. 8 is a front view schematically showing the upper surface of the manufacturing apparatus shown in FIG. [Figure 9] 9 is a front view showing the shape of the light-shielding layer of the photomask shown in FIGS. 7 and 8. FIG. [Figure 10] 1 is a side cross-sectional view illustrating a method for transferring a micro LED using a manufacturing apparatus according to an embodiment. FIG. [Figure 11] 1 is a side cross-sectional view illustrating a method for transferring a micro LED using a manufacturing apparatus according to an embodiment. FIG. [Figure 12] 1 is a side cross-sectional view illustrating a method for transferring a micro LED using a manufacturing apparatus according to an embodiment. FIG. [Figure 13] 10 is a side cross-sectional view schematically illustrating a display panel manufacturing apparatus according to another embodiment. [Figure 14] 14 is a side cross-sectional view showing a method for transferring a micro LED using the display panel manufacturing apparatus of FIG. 13. FIG. [Figure 15] 10 is a side cross-sectional view schematically illustrating a display panel manufacturing apparatus according to another embodiment. [Figure 16] 16 is a front view showing the shape of the light-shielding layer of the photomask shown in FIG. 15. FIG. [Figure 17] 17 is a side cross-sectional view showing a method for transferring a micro LED using the manufacturing apparatus shown in FIG. 16. FIG. [Figure 18] 10 is a side cross-sectional view schematically illustrating a display panel manufacturing apparatus according to another embodiment. [Figure 19] 19 is a side cross-sectional view showing a method for transferring a micro LED using the display panel manufacturing apparatus of FIG. 18. FIG. [Figure 20] 10 is a side cross-sectional view schematically illustrating a display panel manufacturing apparatus according to another embodiment. [Figure 21] 21 is a side cross-sectional view showing a method for transferring a micro LED using the display panel manufacturing apparatus of FIG. 20. FIG. [Figure 22] 10 is a side cross-sectional view schematically illustrating a display panel manufacturing apparatus according to another embodiment. [Figure 23]23 is a side cross-sectional view showing a method for transferring a micro LED using the display panel manufacturing apparatus of FIG. 22. [Figure 24] 10 is a side cross-sectional view schematically illustrating a display panel manufacturing apparatus according to another embodiment. [Figure 25] 25 is a side cross-sectional view showing a method for transferring a micro LED using the display panel manufacturing apparatus of FIG. 24. FIG. [Figure 26a] 25 is a cross-sectional view of a metal mask according to one embodiment of FIG. 24. [Figure 26b] 25 is a cross-sectional view of a metal mask according to one embodiment of FIG. 24. [Figure 26c] 25 is a cross-sectional view of a metal mask according to one embodiment of FIG. 24. [Figure 26d] 25 is a cross-sectional view of a metal mask according to one embodiment of FIG. 24. [Figure 27] 10 is a side cross-sectional view schematically illustrating a display panel manufacturing apparatus according to another embodiment. [Figure 28] 28 is a side cross-sectional view showing a method for transferring a micro LED using the display panel manufacturing apparatus of FIG. 27. [Figure 29a] FIG. 28 is a cross-sectional view of a metal mask according to one embodiment of FIG. 27. [Figure 29b] FIG. 28 is a cross-sectional view of a metal mask according to one embodiment of FIG. 27. [Figure 29c] FIG. 28 is a cross-sectional view of a metal mask according to one embodiment of FIG. 27. [Figure 29d] FIG. 28 is a cross-sectional view of a metal mask according to one embodiment of FIG. 27. [Figure 30] 10 is a side cross-sectional view schematically illustrating a display panel manufacturing apparatus according to another embodiment. [Figure 31] 31 is a side cross-sectional view showing a method for transferring a micro LED using the display panel manufacturing apparatus of FIG. 30. FIG. [Figure 32] 10 is a side cross-sectional view schematically illustrating a display panel manufacturing apparatus according to another embodiment. [Figure 33] 33 is a side cross-sectional view showing a method for transferring a micro LED using the display panel manufacturing apparatus of FIG. 32. [Figure 34]10 is a side cross-sectional view schematically illustrating a display panel manufacturing apparatus according to another embodiment. [Figure 35] 35 is a side cross-sectional view showing a method for transferring a micro LED using the display panel manufacturing apparatus of FIG. 34. [Figure 36a] FIG. 34 is a cross-sectional view of a metal mask according to one embodiment of FIG. 33. [Figure 36b] FIG. 34 is a cross-sectional view of a metal mask according to one embodiment of FIG. 33. DETAILED DESCRIPTION OF THE INVENTION

[0032] The advantages and features of the present invention, as well as methods for achieving them, will become clearer with reference to the following detailed embodiments in conjunction with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below, and can be realized in various different forms. The present embodiments are provided solely for the purpose of complete disclosure of the present invention and to fully convey the scope of the invention to those skilled in the art to which the present invention pertains. The present invention is defined solely by the scope of the claims.

[0033] When elements or layers are referred to as being "on" other elements or layers, this includes all cases where other layers or elements are directly on or between the other elements. The same reference numerals refer to the same components throughout the specification. The shapes, sizes, ratios, angles, numbers, etc. disclosed in the drawings for explaining the embodiments are merely examples, and the present invention is not limited to the details shown in the drawings.

[0034] Although terms such as "first" and "second" are used to describe various components, it is understood that these components are not limited by these terms. These terms are used merely to distinguish one component from another. Therefore, it is understood that a "first" component referred to below may be a "second" component within the technical concept of the present invention.

[0035] The features of the various embodiments of the present invention may be partially or fully combined or combined with each other, and various technical interlocking and driving mechanisms may be possible, and each embodiment may be implemented independently of the others or in conjunction with each other.

[0036] Hereinafter, specific embodiments will be described with reference to the accompanying drawings.

[0037] FIG. 1 is a plan view of a display device according to an embodiment.

[0038] 1, a display device 10 according to an embodiment may be applied to various home appliances or Internet of Things devices such as smartphones, mobile phones, tablet PCs, PDAs (Personal Digital Assistants), PMPs (Portable Multimedia Players), televisions, game consoles, wristwatch-type electronic devices, head-mounted displays, personal computer monitors, notebook computers, vehicle navigation systems, vehicle instrument panels, digital cameras, camcorders, exterior billboards, electronic displays, medical devices, testing devices, refrigerators, washing machines, etc. In this specification, a television will be described as an example of a display device, and the television may have high resolution or ultra-high resolution such as HD, UHD, 4K, or 8K.

[0039] Furthermore, the display device 10 according to an embodiment can be classified into various types depending on the display method. For example, display devices can be classified into organic light-emitting display devices (OLEDs), inorganic light-emitting display devices (inorganic ELs), quantum dot light-emitting display devices (QEDs), micro-LEDs, nano-LEDs, plasma display devices (PDPs), field emission displays (FEDs), cathode ray tube displays (CRTs), liquid crystal displays (LCDs), electrophoretic display devices (EPDs), etc. Hereinafter, a micro-LED display device will be described as an example of the display device, and unless otherwise required, the micro-LED display device applied to the embodiment will be simply referred to as a display device. However, the embodiment is not limited to the micro-LED display device, and other display devices listed above or known in the art may be applied within the scope of sharing the technical concept.

[0040] In the following drawings, the first direction DR1 refers to the horizontal direction of the display device 10, the second direction DR2 refers to the vertical direction of the display device 10, and the third direction DR3 refers to the thickness direction of the display device 10. In this case, "left," "right," "upper," and "lower" refer to directions when the display device 10 is viewed from above. For example, "right side" refers to one side in the first direction DR1, "left side" refers to the other side in the first direction DR1, "upper side" refers to one side in the second direction DR2, and "lower side" refers to the other side in the second direction DR2. Furthermore, "upper" and "front" refer to one side in the third direction DR3, and "lower" and "rear" refer to the other side in the third direction DR3.

[0041] The display device 10 according to an embodiment may have a circular, oval, or square shape in plan view, for example, a square shape. Furthermore, if the display device 10 is a television, it may have a rectangular shape with its long side oriented horizontally. However, the display device 10 is not limited thereto, and its long side may be oriented vertically, or it may be rotatably installed so that its long side can be variably oriented horizontally or vertically.

[0042] The display device 10 may include a display area DPA and a non-display area NDA. The display area DPA may be an active area where an image is displayed. The display area DPA may have a square shape in plan view similar to the general shape of the display device 10, but is not limited to this and may also be circular or elliptical.

[0043] The display area DPA may include a plurality of pixels PX. The plurality of pixels PX are arranged in rows and columns. The shape of each pixel PX may be, but is not limited to, a rectangle or a square in plan view. It may also be a rhombus with each side tilted relative to one side of the display device 10. The plurality of pixels PX may include pixels PX of various colors. For example, but is not limited to, the plurality of pixels PX may include a first color pixel PX of red, a second color pixel PX of green, and a third color pixel PX of blue. The color pixels PX may be arranged alternately in a stripe or pen-tile pattern.

[0044] A non-display area NDA may be disposed around the display area DPA. The non-display area NDA may completely or partially surround the display area DPA. The display area DPA may have various shapes, such as a circle or a square. The non-display area NDA may be formed in a shape that surrounds the periphery of the display area DPA. The non-display area NDA may be configured as a bezel of the display device 10.

[0045] In the non-display area NDA, a driving circuit or driving element for driving the display area DPA may be disposed. In one embodiment, a pad unit may be provided on a display substrate of the display device 10 in the non-display area NDA disposed adjacent to the first side (bottom side in FIG. 1) of the display device 10, and an external device EXD may be mounted on the pad electrodes of the pad unit. Examples of the external device EXD include a connecting film, a printed circuit board, a driving chip DIC, a connector, a wiring connecting film, etc. In the non-display area NDA disposed adjacent to the second side (left side in FIG. 1) of the display device 10, a scan driver SDR formed directly on the display substrate of the display device 10 may be disposed.

[0046] FIG. 2 is a plan view schematically illustrating a light-emitting region of each pixel according to an embodiment.

[0047] 2, the pixels PX may be arranged in rows and columns and may be divided into a first color pixel PX (red), a second color pixel PX (green), and a third color pixel PX (blue). A fourth color pixel PX (white) may also be included.

[0048] The pixel electrode of the first color pixel PX is located in the first light-emitting area EA1 and can extend at least partially into the non-light-emitting area NEA. The pixel electrode of the second color pixel PX is located in the second light-emitting area EA2 and can extend at least partially into the non-light-emitting area NEA. The pixel electrode of the third color pixel PX is located in the third light-emitting area EA3 and can extend at least partially into the non-light-emitting area NEA. The pixel electrode of each pixel PX can be connected to any one switching element included in the corresponding pixel circuit through at least one insulating layer.

[0049] A plurality of light-emitting elements LE are disposed on the pixel electrodes of the first light-emitting area EA1, the second light-emitting area EA2, and the third light-emitting area EA3. Each light-emitting element LE may be formed of a micro LED. The light-emitting elements LE are disposed in the first light-emitting area EA1, the second light-emitting area EA2, and the third light-emitting area EA3, respectively. A first red color filter, a second green color filter, and a third blue color filter may be disposed on the first light-emitting area EA1, the second light-emitting area EA2, and the third light-emitting area EA3, respectively, where the plurality of light-emitting elements LE are disposed. A first organic layer FOL may be disposed in the non-light-emitting area NEA.

[0050] FIG. 3 is a plan view schematically showing a light-emitting region of each pixel according to another embodiment.

[0051] 3, the shape of each pixel PX is not limited to a rectangle or a square in plan view, but may also be a diamond shape with each side inclined relative to one side of the display device 10 to form a pentile structure. Therefore, in each pixel PX of the pentile structure, the first light-emitting region EA1 of the first color pixel PX, the second light-emitting region EA2 of the second color pixel PX, the third light-emitting region EA3 of the third color pixel PX, and the fourth light-emitting region EA4 of any one of the first to third color pixels PX may each be formed in a diamond shape.

[0052] The first to fourth light-emitting regions EA1 to EA4 of each pixel PX may have the same or different sizes or planar areas, and the number of light-emitting elements LE formed in each of the first to fourth light-emitting regions EA1 to EA4 may be the same or different.

[0053] The areas of the first light-emitting region EA1, the second light-emitting region EA2, the third light-emitting region EA3, and the fourth light-emitting region EA4 may be substantially the same, but are not limited to this and may be different from one another. The distance between the adjacent first light-emitting region EA1 and the second light-emitting region EA2, the distance between the adjacent second light-emitting region EA2 and the third light-emitting region EA3, the distance between the adjacent first light-emitting region EA1 and the third light-emitting region EA3, and the distance between the adjacent third light-emitting region EA3 and the fourth light-emitting region EA4 may be substantially the same, but may be different from one another. The embodiments of the present specification are not limited to this.

[0054] The first light-emitting region EA1 may emit the first light, the second light-emitting region EA2 may emit the second light, and the third light-emitting region EA3 and the fourth light-emitting region EA4 may emit the third light, but the embodiments of the present specification are not limited thereto. For example, the first light-emitting region EA1 may emit the second light, the second light-emitting region EA2 may emit the first light, and the third and fourth light-emitting regions EA3 and EA4 may emit the third light. Alternatively, the first light-emitting region EA1 may emit the third light, the second light-emitting region EA2 may emit the second light, and the first and fourth light-emitting regions EA3 and EA4 may emit the first light. Alternatively, at least one of the first to fourth light-emitting regions EA1 to EA4 may emit the fourth light. The fourth light may be light in the yellow wavelength band. That is, the main peak wavelength of the fourth light may be approximately 550 nm to 600 nm, but the embodiments of the present specification are not limited thereto.

[0055] Fig. 4 is a cross-sectional view according to an embodiment, schematically showing a cross section taken along line A-A' in Fig. 2. Fig. 5 is an enlarged view schematically showing the first light-emitting region in Fig. 4, and Fig. 6 is a cross-sectional view specifically showing the light-emitting device in Fig. 5.

[0056] 4 to 6, the display panel of the display device 10 may include a display substrate 20 and a wavelength conversion unit 30 disposed on the display substrate 20.

[0057] A barrier film BR may be disposed on the first substrate 110 of the display substrate 20. The first substrate 110 is made of an insulating material such as a polymer resin. For example, the first substrate 110 (sometimes referred to as the first substrate SUB) may be made of polyimide. The first substrate 110 may be a flexible substrate that allows bending, folding, rolling, and the like.

[0058] The barrier film BR is a film for protecting the thin film transistors T1, T2, and T3 and the light emitting element LEP from moisture that may penetrate through the first substrate 110, which is susceptible to moisture permeation. The barrier film BR is made of a plurality of inorganic films that are alternately stacked. For example, the barrier film BR may be formed of a multi-layer structure in which one or more inorganic films selected from the group consisting of silicon nitride, silicon oxynitride, silicon oxide, titanium oxide, and aluminum oxide are alternately stacked.

[0059] The transistors T1, T2, and T3 may be disposed on the barrier film BR. Each of the thin film transistors T1, T2, and T3 includes an active layer ACT1, a gate electrode G1, a source electrode S1, and a drain electrode D1.

[0060] Active layers ACT1, ACT2, and ACT3, source electrodes S1, S2, and S3, and drain electrodes D1, D2, and D3 of thin-film transistors T1, T2, and T3 may be disposed on the barrier film BR. The active layers ACT1, ACT2, and ACT3 of thin-film transistors T1, T2, and T3 may include polycrystalline silicon, single-crystalline silicon, low-temperature polycrystalline silicon, amorphous silicon, or an oxide semiconductor. The active layers ACT1, ACT2, and ACT3 overlapping with the gate electrodes G1, G2, and G3 in the third direction (Z-axis direction), which is the thickness direction of the first substrate 110, may be defined as channel regions. The source electrodes S1, S2, and S3 and the drain electrodes D1, D2, and D3 are regions not overlapping with the gate electrodes G1, G2, and G3 in the third direction (Z-axis direction), and may be conductive due to ions or impurities being doped into the silicon semiconductor or oxide semiconductor.

[0061] A gate insulating layer 130 may be disposed on the active layers ACT1, ACT2, and ACT3, the source electrodes S1, S2, and S3, and the drain electrodes D1, D2, and D3 of the thin film transistors T1, T2, and T3. The gate insulating layer 130 may be formed of an inorganic film, such as a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, a titanium oxide layer, or an aluminum oxide layer.

[0062] Gate electrodes G1, G2, and G3 of thin film transistors T1, T2, and T3 may be disposed on the gate insulating layer 130. The gate electrodes G1, G2, and G3 may overlap with the active layers ACT1, ACT2, and ACT3 in the third direction (Z-axis direction). The gate electrodes G1, G2, and G3 may be formed of a single layer or multiple layers made of any one of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu), or an alloy thereof.

[0063] A first interlayer insulating film 141 may be disposed on the gate electrodes G1, G2, and G3 of the thin film transistors T1, T2, and T3. The first interlayer insulating film 141 may be formed of an inorganic film, such as a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, a titanium oxide layer, or an aluminum oxide layer. The first interlayer insulating film 141 may be formed of a plurality of inorganic films.

[0064] A capacitor electrode CAE may be disposed on the first interlayer insulating film 141. The capacitor electrode CAE may overlap with the gate electrodes G1, G2, and G3 of the thin film transistors T1, T2, and T3 in the third direction (Z-axis direction). Because the first interlayer insulating film 141 has a predetermined dielectric constant, a capacitor may be formed by the capacitor electrode CAE, the gate electrodes G1, G2, and G3, and the first interlayer insulating film 141 disposed therebetween. The capacitor electrode CAE may be formed of a single layer or multiple layers made of any one of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu), or an alloy thereof.

[0065] A second interlayer insulating film 142 may be disposed on the capacitor electrode CAE. The second interlayer insulating film 142 may be formed of an inorganic film, such as a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, a titanium oxide layer, or an aluminum oxide layer. The second interlayer insulating film 142 may be formed of multiple inorganic films.

[0066] First anode connecting electrodes ANDE1 corresponding to the thin film transistors T1, T2, and T3 may be disposed on the second interlayer insulating film 142. Each of the first anode connecting electrodes ANDE1 may be connected to the drain electrodes D1, D2, and D3 of the thin film transistors T1, T2, and T3 through a first connecting contact hole ANCT1 penetrating the gate insulating layer 130, the first interlayer insulating film 141, and the second interlayer insulating film 142. The first anode connecting electrodes ANDE1 may be formed as a single layer or multiple layers made of any one of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu) or an alloy thereof.

[0067] A first planarization film 160 for planarizing steps caused by the thin film transistors T1, T2, and T3 may be disposed on each of the first anode connecting electrodes ANDE1. The first planarization film 160 may be formed of an organic film such as an acrylic resin, an epoxy resin, a phenolic resin, a polyamide resin, or a polyimide resin.

[0068] Second anode-connecting electrodes ANDE2 may be disposed on the first planarization layer 160 in correspondence with the first anode-connecting electrodes ANDE1. Each second anode-connecting electrode ANDE2 may be connected to each first anode-connecting electrode ANDE1 through a corresponding second connecting contact hole ANCT2 penetrating the first planarization layer 160. The second anode-connecting electrodes ANDE2 may be formed of a single layer or multiple layers made of any one of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu), or an alloy thereof.

[0069] A second planarization layer 180 may be disposed on the second anode connecting electrode ANDE2. The second planarization layer 180 may be formed of an organic film such as an acrylic resin, an epoxy resin, a phenolic resin, a polyamide resin, or a polyimide resin.

[0070] The light emitting element unit LEP may be formed on the second planarization layer 180. The light emitting element unit LEP may include a plurality of pixel electrodes PE1, PE2, and PE3, a plurality of light emitting elements LE, and a common electrode CE.

[0071] The pixel electrodes PE1, PE2, and PE3 may include a first pixel electrode PE1, a second pixel electrode PE2, and a third pixel electrode PE3. The first pixel electrode PE1, the second pixel electrode PE2, and the third pixel electrode PE3 may serve as first electrodes of the light-emitting element LE and may be anode electrodes or cathode electrodes. The first pixel electrode PE1 is located in the first light-emitting area EA1 and may extend at least partially into the non-light-emitting area NEA. The second pixel electrode PE2 is located in the second light-emitting area EA2 and may extend at least partially into the non-light-emitting area NEA. The third pixel electrode PE3 is located in the third light-emitting area EA3 and may extend at least partially into the non-light-emitting area NEA. Referring to FIG. 5, the first pixel electrode PE1 may be connected to the first switching element T1 through the insulating layer 130, the second pixel electrode PE2 may be connected to the second switching element T2 through the insulating layer 130, and the third pixel electrode PE3 may be connected to the third switching element T3 through the insulating layer 130. Referring to FIG. 4, each pixel electrode PE (PE1 to PE3) may penetrate the second planarization film 180, the first planarization film 160, and the interlayer insulating film 140 (first and second interlayer insulating films 141 and 142) and be connected to each of the first to third switching elements T1 to T3 via each of the first anode connecting electrodes ANDE1 and each of the second anode connecting electrodes ANDE2.

[0072] The first pixel electrode PE1, the second pixel electrode PE2, and the third pixel electrode PE3 may be reflective electrodes. The first pixel electrode PE1, the second pixel electrode PE2, and the third pixel electrode PE3 may be made of Ti (Titanium), copper (Cu), or an alloy of Ti (Titanium) and copper (Cu). They may also have a stacked film structure of Ti (Titanium) and copper (Cu). In addition, the first pixel electrode PE1, the second pixel electrode PE2, and the third pixel electrode PE3 may have a stacked film structure in which a high work function material layer, such as titanium oxide (TiO2), indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), indium tin zinc oxide (ITZO), or magnesium oxide (MgO), and a reflective material layer, such as silver (Ag), magnesium (Mg), aluminum (Al), platinum (Pt), lead (Pd), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), lithium (Li), calcium (Ca), titanium (Ti), copper (Cu), or a mixture thereof, are stacked. The high work function material layer may be disposed above the reflective material layer and be closer to the light emitting element LE. The first pixel electrode PE1, the second pixel electrode PE2, and the third pixel electrode PE3 may have a multilayer structure such as, but not limited to, ITO / Mg, ITO / MgF, ITO / Ag, or ITO / Ag / ITO.

[0073] A bank BNL may be located on the first pixel electrode PE1, the second pixel electrode PE2, and the third pixel electrode PE3. The bank BNL may include an opening exposing the first pixel electrode PE1, an opening exposing the second pixel electrode PE2, and an opening exposing the third pixel electrode PE3, and may define a first light-emitting region EA1, a second light-emitting region EA2, a third light-emitting region EA3, and a non-light-emitting region NEA. That is, the exposed region of the first pixel electrode PE1 that is not covered by the bank BNL may be the first light-emitting region EA1. The exposed region of the second pixel electrode PE2 that is not covered by the bank BNL may be the second light-emitting region EA2. The exposed region of the third pixel electrode PE3 that is not covered by the bank BNL may be the third light-emitting region EA3. In addition, the region where the bank BNL is located may be the non-light-emitting region NEA.

[0074] The bank BNL may include an organic insulating material, such as an acrylic resin, an epoxy resin, a phenolic resin, a polyamide resin, a polyimide resin, an unsaturated polyester resin, a polyphenylene resin, a polyphenylene sulfide resin, or benzocyclobutene (BCB).

[0075] In one embodiment, the bank BNL may overlap the color filters CF1, CF2, and CF3 and the light blocking member BK of the wavelength converting unit 30, which will be described later. In an exemplary embodiment, the bank BNL may completely overlap the light blocking member BK. Also, the bank BNL may overlap the first color filter CF1, the second color filter CF2, and the third color filter CF3.

[0076] A plurality of light-emitting elements LE may be arranged on the first pixel electrode PE1, the second pixel electrode PE2, and the third pixel electrode PE3.

[0077] As shown in FIGS. 5 and 6, the light-emitting element LE may be disposed in each of the first light-emitting region EA1, the second light-emitting region EA2, and the third light-emitting region EA3. The light-emitting element LE may be a vertical light-emitting diode element extending in the third direction DR3. That is, the length of the light-emitting element LE in the third direction DR3 may be longer than the length in the horizontal direction. The horizontal length refers to the length in the first direction DR1 or the length in the second direction DR2. For example, the length of the light-emitting element LE in the third direction DR3 may be approximately 1 to 5 μm.

[0078] Each light emitting element LE may be a micro LED (micro light emitting diode). The light emitting element LE may include a connecting electrode 125, a first semiconductor layer SEM1, an electron blocking layer EBL, an active layer MQW, a superlattice layer SLT, a second semiconductor layer SEM2, and a third semiconductor layer SEM3 in the thickness direction of the display substrate 20, i.e., in the third direction DR3. The connecting electrode 125, the first semiconductor layer SEM1, the electron blocking layer EBL, the active layer MQW, the superlattice layer SLT, the second semiconductor layer SEM2, and the third semiconductor layer SEM3 may be sequentially stacked in the third direction DR3.

[0079] The light emitting device LE may have a cylindrical, disc, bridge, or rod shape in which the width is longer than the height, but is not limited thereto, and may have various shapes such as a rod, wire, tube, or polygonal prism shape such as a regular cube, rectangular cube, or hexagonal prism, or a shape extending in one direction with a partially inclined outer surface.

[0080] The connecting electrode 125 may be disposed on each of the pixel electrodes PE1, PE2, and PE3. In the following description, the light emitting element LE disposed on the first pixel electrode PE1 will be taken as an example.

[0081] The connecting electrode 125 is attached to the first pixel electrode PE1 and serves to apply an emission signal to the light emitting element LE. The connecting electrode 125 may be an ohmic connecting electrode. However, without being limited thereto, it may also be a Schottky connecting electrode. The light emitting element LE may include at least one connecting electrode 125. Although FIGS. 7 and 8 show the light emitting element LE including one connecting electrode 125, this is not limiting. Depending on the circumstances, the light emitting element LE may include more or no connecting electrodes 125. The description of the light emitting element LE described below is equally applicable even if the number of connecting electrodes 125 is changed or if other structures are further included.

[0082] When the light emitting element LE in the display device 10 according to an embodiment is electrically connected to the first pixel electrode PE1, the connecting electrode 125 can reduce the resistance between the light emitting element LE and the first pixel electrode PE1 and improve adhesion. The connecting electrode 125 can include a conductive metal oxide. For example, the connecting electrode 125 can be made of ITO. The connecting electrode 125 is connected to the underlying first pixel electrode PE1 by directly contacting the latter, and therefore is made of the same material as the first pixel electrode PE1. The connecting electrode 125 can also optionally include a reflective electrode made of a metal material with high reflectivity, such as aluminum (Al), or a diffusion barrier layer containing nickel (Ni). This can improve adhesion between the connecting electrode 125 and the first pixel electrode PE1, thereby improving contact characteristics.

[0083] 6, in an exemplary embodiment, the first pixel electrode PE1 may include a lower electrode layer P1, a reflective layer P2, and an upper electrode layer P3. The lower electrode layer P1 is disposed at the bottom of the first pixel electrode PE1 and may be electrically connected to the switching element. The lower electrode layer P1 may include a metal oxide, such as titanium oxide (TiO2), indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), indium tin zinc oxide (ITZO), or magnesium oxide (MgO).

[0084] The reflective layer P2 is disposed on the lower electrode layer P1 and reflects the light emitted from the light-emitting element LE upward. The reflective layer P2 may include a metal with high reflectivity, such as silver (Ag), magnesium (Mg), aluminum (Al), platinum (Pt), lead (Pd), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), lithium (Li), calcium (Ca), or a mixture thereof.

[0085] The upper electrode layer P3 is disposed on the reflective layer P2 and can be in direct contact with the light emitting element LE. The upper electrode layer P3 is disposed between the reflective layer P2 and the connecting electrode 125 of the light emitting element LE and can be in direct contact with the connecting electrode 125. As described above, the connecting electrode 125 is made of a metal oxide, and the upper electrode layer P3 is also made of a metal oxide, just like the connecting electrode 125.

[0086] The upper electrode layer P3 may be formed of titanium (Ti), copper (Cu), or an alloy of titanium and copper (Cu). It may also have a stacked film structure of titanium and copper (Cu). The upper electrode layer P3 may also include titanium oxide (TiO2), indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), indium tin zinc oxide (ITZO), or magnesium oxide (MgO). In an exemplary embodiment, when the connecting electrode 125 is made of ITO, the first pixel electrode PE1 has a multi-layer structure of ITO / Ag / ITO.

[0087] The first semiconductor layer SEM1 may be disposed on the connecting electrode 125. The first semiconductor layer SEM1 may be a p-type semiconductor and may include a semiconductor material having a chemical formula of AlxGayIn1-x-yN (0≦x≦1, 0≦y≦1, 0≦x+y≦1). For example, the first semiconductor layer SEM1 may be one or more of p-type doped AlGaInN, GaN, AlGaN, InGaN, AlN, and InN. The first semiconductor layer SEM1 is doped with a p-type dopant, and the p-type dopant may be Mg, Zn, Ca, Se, Ba, or the like. For example, the first semiconductor layer SEM1 may be p-GaN doped with p-type Mg. The thickness of the first semiconductor layer SEM1 may be in the range of 30 nm to 200 nm, but is not limited thereto.

[0088] The electron blocking layer EBL may be disposed on the first semiconductor layer SEM1. The electron blocking layer EBL may be a layer for suppressing or preventing excessive electrons from flowing into the active layer MQW. For example, the electron blocking layer EBL may be p-AlGaN doped with p-type Mg. The thickness of the electron blocking layer EBL may be in the range of 10 nm to 50 nm, but is not limited thereto. Alternatively, the electron blocking layer EBL may be omitted.

[0089] The active layer MQW can be disposed on the electron blocking layer EBL. The active layer MQW can emit light by recombination of electron-hole pairs in response to an electrical signal applied via the first semiconductor layer SEM1 and the second semiconductor layer SEM2.

[0090] The active layer MQW may include a material with a single or multiple quantum well structure. When the active layer MQW includes a material with a multiple quantum well structure, it may have a structure in which multiple well layers and barrier layers are alternately stacked. In this case, the well layers may be made of InGaN, and the barrier layers may be made of GaN or AlGaN, but are not limited thereto. The thickness of the well layers may be approximately 1 to 4 nm, and the thickness of the barrier layers may be 3 to 10 nm.

[0091] Alternatively, the active layer MQW may have a structure in which semiconductor materials with large band gap energy and semiconductor materials with small band gap energy are alternately stacked, and may include different Group III to V semiconductor materials depending on the wavelength band of the emitted light. The light emitted by the active layer MQW is not limited to the first light, and may also emit the second light (light in the green wavelength band) or the third light (light in the red wavelength band) depending on the case.

[0092] Specifically, the color of light emitted by the active layer MQW can change depending on the indium (In) content. For example, as the indium (In) content decreases, the wavelength band of the light emitted by the active layer shifts toward the red wavelength band, and as the indium (In) content increases, the wavelength band of the light emitted shifts toward the blue wavelength band. For example, when the indium (In) content is 15% or less, the active layer MQW can emit first light in the red wavelength band with a main peak wavelength ranging from approximately 600 nm to 750 nm. Alternatively, when the indium (In) content is 25%, the active layer MQW can emit second light in the green wavelength band with a main peak wavelength ranging from approximately 480 nm to 560 nm. Furthermore, when the indium (In) content is 35% or more, the active layer MQW can emit third light in the blue wavelength band with a main peak wavelength ranging from approximately 370 nm to 460 nm. An example in which the active layer MQW emits light in the blue wavelength band with a main peak wavelength ranging from approximately 370 nm to 460 nm will be described with reference to FIG.

[0093] A superlattice layer SLT may be disposed on the active layer MQW. The superlattice layer SLT may be a layer for relieving stress between the second semiconductor layer SEM2 and the active layer MQW. For example, the superlattice layer SLT may be formed of InGaN or GaN. The thickness of the superlattice layer SLT may be approximately 50 to 200 nm. The superlattice layer SLT may be omitted.

[0094] The second semiconductor layer SEM2 may be disposed on the superlattice layer SLT. The second semiconductor layer SEM2 may be an n-type semiconductor. The second semiconductor layer SEM2 may include a semiconductor material having a chemical formula of AlxGayIn1-x-yN (0≦x≦1, 0≦y≦1, 0≦x+y≦1). For example, the second semiconductor layer SEM2 may be one or more of n-type doped AlGaInN, GaN, AlGaN, InGaN, AlN, and InN. The second semiconductor layer SEM2 is doped with an n-type dopant, and the n-type dopant may be Si, Ge, Sn, or the like. For example, the second semiconductor layer SEM2 may be n-GaN doped with n-type Si. The thickness of the second semiconductor layer SEM2 may be in the range of 2 μm to 4 μm, but is not limited thereto.

[0095] The third semiconductor layer SEM3 may be disposed on the second semiconductor layer SEM2. The third semiconductor layer SEM3 may be disposed between the second semiconductor layer SEM2 and the common electrode CE. The third semiconductor layer SEM3 may be an undoped semiconductor. The third semiconductor layer SEM3 may include the same material as the second semiconductor layer SEM2 and may be a material that is not doped with an n-type or p-type dopant. In an exemplary embodiment, the third semiconductor layer SEM3 may be at least one of undoped InAlGaN, GaN, AlGaN, InGaN, AlN, and InN, but is not limited thereto.

[0096] A planarization layer PLL may be disposed on the bank BNL and the plurality of pixel electrodes PE1, PE2, and PE3. The planarization layer PLL may planarize a lower step so that a common electrode CE (described later) may be formed. The planarization layer PLL may be formed to a predetermined height so that at least a portion, for example, an upper portion, of the plurality of light-emitting elements LE may protrude above the planarization layer PLL. That is, the height of the planarization layer PLL based on the top surface of the first pixel electrode PE1 may be smaller than the height of the light-emitting elements LE.

[0097] The planarization layer PLL may include an organic material to planarize underlying steps. For example, the planarization layer PLL may include an acrylic resin, an epoxy resin, a phenolic resin, a polyamide resin, a polyimide resin, an unsaturated polyester resin, a polyphenylene resin, a polyphenylene sulfide resin, or benzocyclobutene (BCB).

[0098] A common electrode CE may be disposed on the planarization layer PLL and the plurality of light emitting elements LE. Specifically, the common electrode CE may be disposed on one surface of the first substrate 110 on which the light emitting elements LE are formed, and may be disposed over the entire display area DPA and non-display area NDA. The common electrode CE is disposed to overlap each of the light emitting areas EA1, EA2, and EA3 in the display area DPA, and has a thin thickness to allow light to be emitted.

[0099] The common electrode CE may be disposed directly on the top and side surfaces of the light emitting elements LE. The common electrode CE may be in direct contact with the second semiconductor layer SEM2 and the third semiconductor layer SEM3 on the side surfaces of the light emitting elements LE. As shown in FIG. 6, the common electrode CE may be a common layer that covers the light emitting elements LE and is commonly connected to the light emitting elements LE. Since the conductive second semiconductor layer SEM2 has a patterned structure for each light emitting element LE, the common electrode CE may be in direct contact with the side surfaces of the second semiconductor layer SEM2 of each light emitting element LE so that a common voltage is applied to each light emitting element LE.

[0100] The common electrode CE is disposed over the entire first substrate 110 and receives a common voltage, and therefore may include a material having low resistance. The common electrode CE is also formed to a thin thickness to facilitate light transmission. For example, the common electrode CE may include a material having low resistance, such as aluminum (Al), silver (Ag), or copper (Cu). The thickness of the common electrode CE may be, but is not limited to, approximately 10 Å to 200 Å.

[0101] The light emitting element LE may receive a pixel voltage or an anode voltage from the pixel electrode via the connecting electrode 125, and may receive a common voltage via the common electrode CE. The light emitting element LE may emit light at a predetermined brightness depending on the voltage difference between the pixel voltage and the common voltage.

[0102] In this embodiment, by arranging multiple light-emitting elements LE, i.e., inorganic light-emitting diodes, on the pixel electrodes PE1, PE2, and PE3, the drawback of organic light-emitting diodes, which are vulnerable to external moisture and oxygen, can be eliminated, thereby improving the lifespan and reliability.

[0103] In addition, a first organic layer FOL can be disposed on the bank BNL disposed in the non-light-emitting area NEA.

[0104] The first organic layer FOL may overlap the non-emitting area NEA and be arranged in a non-overlapping state with the emitting areas EA1, EA2, and EA3. The first organic layer FOL may be arranged directly on the bank BNL and spaced apart from the adjacent pixel electrodes PE1, PE2, and PE3. The first organic layer FOL may be arranged entirely on the first substrate 110 and may be arranged to surround the emitting areas EA1, EA2, and EA3. The first organic layer FOL may be arranged in a lattice shape overall.

[0105] In the manufacturing process described below, the first organic layer FOL can serve to detach the plurality of light-emitting elements LE that are in contact with the first organic layer FOL in the non-light-emitting area NEA. When the first organic layer FOL is irradiated with laser light, it absorbs energy, causing an instantaneous increase in temperature and ablation. Therefore, the plurality of light-emitting elements LE that are in contact with the upper surface of the first organic layer FOL can be detached from the upper surface of the first organic layer FOL.

[0106] The first organic layer FOL may include a polyimide-based compound. The polyimide-based compound of the first organic layer FOL may include a cyano group to absorb light with a wavelength of 308 nm, e.g., laser light. In an exemplary embodiment, the first organic layer FOL and the bank BNL may each include a polyimide-based compound or may include different polyimide-based compounds. For example, the bank BNL may be made of a polyimide-based compound that does not include a cyano group, and the first organic layer FOL may be made of a polyimide-based compound that includes a cyano group. The transmittance of the first organic layer FOL to laser light with a wavelength of 308 nm may be lower than that of the bank BNL. The transmittance of the bank BNL may be about 60% or more, and the transmittance of the first organic layer FOL may be 0%. Alternatively, the absorptance of the first organic layer FOL to laser light with a wavelength of 308 nm may be 100%. The first organic layer FOL has a thickness in the range of about 2 Å to 10 μm. When the thickness of the first organic layer FOL is 2 Å or more, the absorptance of laser light with a wavelength of 308 nm can be improved. When the thickness of the first organic layer FOL is 10 μm or less, the step between the first organic layer FOL and the first pixel electrode PE1 can be prevented from becoming large, and the light-emitting element LE can be easily bonded onto the pixel electrode in the process described below.

[0107] The wavelength converting portion 30 may be disposed on the light emitting element portion LEP (FIG. 4). The wavelength converting portion 30 may include a partition wall PW, a wavelength converting layer QDL, color filters CF1, CF2, and CF3, a light blocking member BK, and a protective layer PTL.

[0108] The partition walls PW are arranged on the common electrode CE in the display area DPA and, together with the banks BNL, can partition a plurality of light-emitting areas EA1, EA2, and EA3. The partition walls PW are arranged to extend in the first direction DR1 and the second direction DR2, and form a grid pattern across the entire display area DPA. The partition walls PW do not overlap with the plurality of light-emitting areas EA1, EA2, and EA3, but may overlap with the non-light-emitting area NEA.

[0109] The partition wall PW may include a plurality of openings OP1, OP2, and OP3 exposing the underlying common electrode CE. The openings OP1, OP2, and OP3 may include a first opening OP1 overlapping the first light-emitting region EA1, a second opening OP2 overlapping the second light-emitting region EA2, and a third opening OP3 overlapping the third light-emitting region EA3. Here, the openings OP1, OP2, and OP3 correspond to the light-emitting regions EA1, EA2, and EA3. That is, the first opening OP1 corresponds to the first light-emitting region EA1, the second opening OP2 corresponds to the second light-emitting region EA2, and the third opening OP3 corresponds to the third light-emitting region EA3.

[0110] The partition walls PW can provide a space for the first and second wavelength conversion layers QDL1 and QDL2 to be formed. To this end, the partition walls PW have a predetermined thickness, for example, a thickness of 1 μm to 10 μm. To ensure the predetermined thickness, the partition walls PW can include an organic insulating material. The organic insulating material can include, for example, an epoxy resin, an acrylic resin, a cardo resin, or an imide resin.

[0111] The first wavelength-converting layer QDL1 may be disposed within each of the first openings OP1. The first wavelength-converting layer QDL1 may have a dot-shaped island pattern spaced apart from each other. The first wavelength-converting layer QDL1 may include a first base resin BRS1 and first wavelength-converting particles WCP1. The first base resin BRS1 may include a light-transmitting organic material. For example, the first base resin BRS1 may include an epoxy-based resin, an acrylic-based resin, a cardo-based resin, or an imide-based resin. The first wavelength-converting particles WCP1 may be quantum dots (QDs), quantum rods, fluorescent materials, or phosphorescent materials. For example, quantum dots may be particulate materials that emit a specific color when electrons transition from the conduction band to the valence band.

[0112] The quantum dots may be semiconductor nanocrystals. The quantum dots have a specific band gap depending on their composition and size, and can absorb light and then emit light with a specific wavelength. Examples of the quantum dot semiconductor nanocrystals include group IV nanocrystals, group II-VI compound nanocrystals, group III-V compound nanocrystals, group IV-VI nanocrystals, or combinations thereof.

[0113] The first wavelength conversion layer QDL1 may be formed in the first opening OP1 of the first light-emitting area EA1. The first wavelength conversion layer QDL1 may convert or shift the peak wavelength of incident light to light with another specific peak wavelength and then emit the light. The first wavelength conversion layer QDL1 may convert a portion of the blue light emitted from the light-emitting element LE into light similar to red, which is the first light. The first wavelength conversion layer QDL1 may emit light similar to red, which is the first light, and the red light may be converted into the first light, red, through the first color filter CF1.

[0114] The second wavelength conversion layer QDL2 may be disposed within each of the second openings OP2. The second wavelength conversion layer QDL2 may have a dot-shaped island pattern spaced apart from each other. For example, the second wavelength conversion layer QDL2 may be disposed overlapping the second light-emitting region EA2. The second wavelength conversion layer QDL2 may include a second base resin BRS2 (not shown, but corresponding to BRS1) and second wavelength-converting particles WCP2 (not shown, but corresponding to WCP1). The second base resin BRS2 may include a translucent organic material. Therefore, the second wavelength conversion layer QDL2 can convert or shift the peak wavelength of incident light to light with a different specific peak wavelength and emit the light. The second wavelength conversion layer QDL2 can convert a portion of the blue light emitted from the light-emitting element LE into light similar to green, which is the second light. By emitting light similar to green, the second wavelength conversion layer QDL2 can convert the light into red, which is the first light, via the second color filter CF2.

[0115] In the third light-emitting area EA3, only a transparent organic material is formed in the third opening OP3, allowing the blue light emitted from the light-emitting element LE to be directly emitted through the third color filter CF3.

[0116] The color filters CF1, CF2, and CF3 may be disposed on the partition wall PW and the first and second wavelength conversion layers QDL1 and QDL2. The color filters CF1, CF2, and CF3 may be disposed to overlap the openings OP1, OP2, and OP3 and the first and second wavelength conversion layers QDL1 and QDL2. The color filters CF1, CF2, and CF3 may include a first color filter CF1, a second color filter CF2, and a third color filter CF3.

[0117] The first color filter CF1 may be disposed overlapping the first light-emitting area EA1. The first color filter CF1 may also be disposed overlapping the first opening OP1 on the partition wall PW. The first color filter CF1 may transmit the first light emitted from the light-emitting element LE and absorb or block the second and third lights. For example, the first color filter CF1 may transmit light in the blue wavelength band and absorb or block light in other wavelength bands such as green and red.

[0118] The second color filter CF2 may be disposed overlapping the second light-emitting area EA2. The second color filter CF2 may also be disposed overlapping the second opening OP2 of the partition wall PW. The second color filter CF2 may transmit the second light and absorb or block the first and third lights. For example, the second color filter CF2 may transmit light in the green wavelength band and absorb or block light in other wavelength bands such as blue and red.

[0119] The third color filter CF3 may be disposed overlapping the third light-emitting area EA3. The third color filter CF3 may also be disposed over the third opening OP3 of the partition wall PW. The third color filter CF3 may transmit the third light and absorb or block the first and second lights. For example, the third color filter CF3 may transmit light in the red wavelength band and absorb or block light in other wavelength bands such as blue and green.

[0120] The planar area of ​​each of the color filters CF1, CF2, and CF3 may be larger than the planar area of ​​each of the light-emitting regions EA1, EA2, and EA3. For example, the first color filter CF1 may be larger than the planar area of ​​the first light-emitting region EA1. The second color filter CF2 may be larger than the planar area of ​​the second light-emitting region EA2. The third color filter CF3 may be larger than the planar area of ​​the third light-emitting region EA3. However, without being limited thereto, the planar area of ​​each of the color filters CF1, CF2, and CF3 may be the same as the planar area of ​​each of the light-emitting regions EA1, EA2, and EA3.

[0121] Referring to FIG. 5, a light-blocking member BK may be disposed on the partition wall PW. The light-blocking member BK may overlap the non-light-emitting area NEA to block light transmission. The light-blocking member BK may be disposed in a generally lattice pattern on a plane, similar to the banks BNL or the partition wall PW. The light-blocking member BK may be disposed to overlap the banks BNL, the first organic layer FOL, and the partition wall PW, but may not overlap the light-emitting areas EA1, EA2, and EA3.

[0122] In one embodiment, the light blocking member BK may include an organic light blocking material and may be formed by coating the organic light blocking material and exposing it to light. The light blocking member BK may include a dye or pigment having light blocking properties and may be a black matrix. At least a portion of the light blocking member BK may overlap the adjacent color filters CF1, CF2, and CF3, and the color filters CF1, CF2, and CF3 may be disposed on at least a portion of the light blocking member BK.

[0123] A protective layer PTL is disposed on the plurality of color filters CF1, CF2, CF3 and the light blocking member BK. The protective layer PTL is disposed at the top of the display device 10 and can protect the plurality of color filters CF1, CF2, CF3 and the light blocking member BK below. One surface of the protective layer PTL, for example, the lower surface, can be in contact with the upper surfaces of the plurality of color filters CF1, CF2, CF3 and the light blocking member BK, respectively.

[0124] The protective layer PTL may include an inorganic insulating material to protect the color filters CF1, CF2, and CF3 and the light-blocking member BK. For example, the protective layer PTL may include, but is not limited to, silicon oxide (SiOx), silicon nitride (SiNx), silicon oxynitride (SiOxNy), aluminum oxide (AlxOy), aluminum nitride (AlN), etc. The protective layer PTL has a predetermined thickness, for example, in the range of 0.01 to 1 μm, but is not limited to this.

[0125] Hereinafter, a display panel manufacturing apparatus that presses and attaches a plurality of light emitting elements LE, i.e., micro LEDs, arranged on the pixel electrodes PE1, PE2, and PE3 of the display substrate 20 will be specifically described.

[0126] 7 is a side cross-sectional view schematically illustrating an apparatus for manufacturing a display panel according to an embodiment, and FIG. 8 is a front view schematically illustrating an upper surface of the apparatus shown in FIG.

[0127] 7 and 8, a display panel manufacturing apparatus can bond two or more bonding targets to each other using a laser beam. The bonding targets can be bonded to each other and electrically connected. The bonding targets can be a substrate, a film, a display panel, a touch panel, a printed circuit board, a flexible circuit board, or a semiconductor element such as a light-emitting element. In the following, an example will be described in which the first bonding target is a display substrate 20 and the second bonding target is a light-emitting element LE.

[0128] The display panel manufacturing apparatus may include a support unit 200, a pressure unit 300, and a laser irradiation unit 500.

[0129] The support part 200 has an upper surface parallel to a plane defined by a first direction DR1 and a second direction DR2 perpendicular to each other, and the display substrate 20 on which the plurality of light emitting elements LE are arranged is mounted.

[0130] The support member 200 may be a loading plate and may be formed in a polygonal flat plate shape, such as a square or a rectangle. The support member 200 may also be formed in a flat plate shape, such as a circle or an oval. An example in which the support member 200 is formed in a square flat plate shape will be described below. In one embodiment, the support member 200 can fix the display substrate 20.

[0131] The laser irradiation unit 500 is disposed in front of the support unit 200 (described later) and irradiates the display substrate 20 with laser light via the pressure unit 300. The laser irradiation unit 500 may be disposed on the uppermost surface of the manufacturing apparatus. The laser irradiation unit 500 irradiates laser light toward the support unit 200 on the lower surface, and the light irradiated from the laser irradiation unit 500 is applied to a plurality of light emitting elements LE arranged on the display substrate 20.

[0132] The laser irradiation unit 500 may include a laser light source 510 and an optical system 530 .

[0133] The laser light source 510 is a device capable of generating laser light using energy supplied from an external source, and can be configured to generate laser light from, for example, a solid-state laser such as a YAG laser, ruby ​​laser, glass laser, YVO4 laser, LD laser, or fiber laser, a liquid laser such as a dye laser, a CO2 laser, an excimer laser (such as an ArF laser, KrF laser, XeCl laser, or XeF laser), a gas laser such as an Ar laser or a He-Ne laser, a semiconductor laser, or a free electron laser.

[0134] The optical system 530 may include a plurality of lenses and may perform optical dispersion to receive the laser beam in the form of a beam from the laser light source 510 and perform area heating on a predetermined area.

[0135] The laser light emitted from the optical system 530 is irradiated onto the light emitting elements LE arranged on the display substrate 20 mounted on the support 200, and can heat a predetermined region of the light emitting elements LE.

[0136] The pressure unit 300 may be disposed in front of the support unit 200 and spaced apart from the support unit 200 in the third direction DR3. The pressure unit 300 may press the display substrate 20 and the light emitting element LE on the support unit 200.

[0137] The pressure applying unit 300 may include a photomask 310 , a mounting member 315 , and a pressure applying member 350 .

[0138] The photomask 310 may be formed of multiple layers. The photomask 310 may include a base layer 311 and a light-shielding pattern layer 312. The photomask 310 may further include a protective layer 313 on the light-shielding pattern layer 312, but the protective layer 313 may be omitted.

[0139] The base layer 311 is formed as a transparent or semi-transparent flat plate made of at least one transparent material such as glass, quartz, silicon, etc. The laser beam passes through the base layer 311 from the front and back surfaces, which are opposite to each other.

[0140] The light-shielding pattern layer 312 is disposed on the back surface, which is one surface of the base layer 311, and includes a pattern having light-shielding or reflective properties. The thickness of the light-shielding pattern layer 312 is not particularly limited, but may be in the range of 80 nm to 180 nm. If the layer is too thin, it becomes difficult to obtain the desired light-shielding or reflective properties, and if the layer is too thick, it becomes difficult to process the light-shielding pattern with high precision.

[0141] The light-shielding pattern layer 312 is not particularly limited as long as it is a material having light-shielding properties, and examples thereof include chromium (Cr), chromium oxynitride (CrON), chromium nitride (CrN), molybdenum silicide oxide (MoSiO), molybdenum silicide oxynitride (MoSiON), tantalum oxide (TaO), tantalum silicide oxide (TaSiO), etc. In one embodiment, chromium (Cr) is selected as the light-shielding pattern layer 312.

[0142] The light-shielding pattern layer 312 includes an opening. A laser beam can pass through the opening. Therefore, the opening can define a transmission area of ​​the laser beam. Here, light irradiated from the laser irradiation unit 500 passes through the light-shielding pattern layer 312 through one opening corresponding to the display area DPA of the display substrate 20 and is applied to a plurality of light-emitting elements LE arranged on the display substrate 20.

[0143] The light-shielding pattern layer 312 can be disposed on the rear surface of the base layer 311 so as to face the light-emitting element LE.

[0144] The protective layer 313 is disposed on the base layer 311 on which the light-shielding pattern layer 312 is provided, and protects the surface of the light-shielding pattern layer 312 to prevent damage to the light-shielding pattern. The thickness of the protective layer 313 is not particularly limited, but may be in the range of about 2 to 3 μm. The protective layer 313 may be made of a transparent or translucent material, including a transparent material, such as a transparent resin.

[0145] The mounting member 315 is attached to the outer rear surface of the photomask 310. For example, the mounting member 315 may be attached to the outer rear surface of the base layer 311. The mounting member 315 may be, for example, any one of an electrostatic chuck, an adhesive chuck, a vacuum chuck, and a porous vacuum chuck. The mounting member 315 may also be, but is not limited to, a clamp. The mounting member 315 does not overlap with the path of the laser light.

[0146] The pressure member 350 may include a light-transmitting plate 351 , an elastic body 352 , a gas pressure regulator 353 , a gas conduit 354 and a holding frame 355 .

[0147] The light-transmitting plate 351 and the elastic body 352 are attached so that their ends overlap the holding frame 355 in the thickness direction. Therefore, when the holding frame 355 is moved downward, the light-transmitting plate 351 and the elastic body 352 attached to the holding frame 355 also move downward, pressing and applying pressure to the photomask 310 located below.

[0148] A sealed space 350-S may be formed between the light-transmitting plate 351 and the elastic body 352.

[0149] The light-transmitting plate 351 may be formed in a rectangular plane having a long side in a first direction and a short side in a second direction intersecting the first direction. A corner where the long side in the first direction and the short side in the second direction intersect may be formed at a right angle. The planar shapes of the light-transmitting plate 351 and the elastic body 352 are not limited to a rectangle, and may be formed in other polygonal, circular, or elliptical shapes.

[0150] The light-transmitting plate 351 is made of a rigid light-transmitting material and transmits the laser light emitted from the laser irradiation unit 500. Here, light-transmitting can be defined as transmitting 80% or more of the light energy of the laser light emitted from the laser irradiation unit 500. For example, the light-transmitting plate 351 is made of a material that exhibits a light transmittance of about 80% or more for light in a wavelength range of about 250 nm to 5 μm, but is not limited thereto.

[0151] The light-transmitting plate 351 is made of any material that can withstand the pressure inside the sealed space 350-S, for example, a pressure of about 0.1 MPa to about 5 MPa based on the gauge pressure. The light-transmitting plate 351 is made of materials such as tempered glass, quartz, acrylic, metal oxide or semi-metal oxide, for example, silicon oxide, aluminum oxide, etc., but is not limited thereto.

[0152] The elastic body 352 is formed of an elastic, light-transmitting material, and can transmit the laser light emitted from the laser irradiation unit 500. For example, the elastic body 352 may be formed of a silicon multilayer, a silicon-PET (polyethylene terephthalate) laminated layer, PDMS (polydimethylsiloxane), etc., but is not limited thereto.

[0153] The elastic body 352 expands downward, that is, toward the photomask 310, due to the pressure inside the sealed space 350-S, generating a pressure in the downward direction.

[0154] The gas pressure regulator 353 can supply gas to the sealed space 350-S between the light-transmitting plate 351 and the elastic body 352 to generate a pressure force.

[0155] The gas pressure regulator 353 can supply a gas that is inert or has very low chemical reactivity and is transparent to a laser beam, such as nitrogen (N), helium (He), neon (Ne), argon (Ar), carbon dioxide (CO), or a mixture thereof, to the sealed space 350-S. Hereinafter, such a gas that is inert or has very low chemical reactivity will be referred to as a neutral gas.

[0156] The gas pressure regulator 353 may include a reservoir for storing gas, a gas pump for pressurizing and supplying the gas, and a gas valve for regulating the flow of the gas. The gas pump may be configured to supply the gas into the enclosed space 350-S at a pressure increased compared to the pressure outside the enclosed space 350-S.

[0157] When the pressure inside the sealed space 350-S is sufficiently high, the gas valve can stop the supply of gas and close the sealed space 350-S so that the internal pressure of the sealed space 350-S is maintained. The gas valve can be, for example, but is not limited to, a ball valve, a globe valve, a gate valve, a control valve, etc.

[0158] The gas conduit 354 connects the gas pressure regulator 353 and the sealed space 350-S and provides a path for gas to travel between the gas pressure regulator 353 and the sealed space 350-S. The gas conduit 354 allows gas to travel between the gas pressure regulator 353 and the sealed space 350-S.

[0159] In one embodiment, the gas conduit 354 is formed to penetrate the holding frame 355, but is not limited thereto. For example, the gas conduit 354 may be formed to penetrate the elastic body 352.

[0160] The holding frame 355 can fix both ends of the light-transmitting plate 351 and the elastic body 352 .

[0161] FIG. 9 is a front view showing the shape of the light-shielding layer of the photomask shown in FIGS.

[0162] Referring to Figures 7 and 9, the light-shielding pattern layer 312 of the photomask 310 may be arranged in an outer region of the photomask 310 that overlaps with the non-display region NDA, which is the outer region of the display substrate 20, except for the display region DPA of the display substrate 20 in which multiple light-emitting elements LE are arranged.

[0163] The light-blocking pattern layer 312 is disposed on one surface of the base layer 311 , and the light-blocking pattern layer 312 may include openings 312 -O corresponding to the display areas DPA of the display substrate 20 .

[0164] 10 to 12 are side cross-sectional views illustrating a method for transferring a micro LED using a manufacturing apparatus according to an embodiment.

[0165] Referring to FIG. 10, a pressure member 350 is disposed in front of a photomask 310 and can move toward the display substrate 20 .

[0166] The photomask 310 may be disposed on the display substrate 20. The openings 312-O defined by the light-blocking pattern layer 312 of the photomask 310 may be aligned with the display area DPA of the display substrate 20. The photomask 310 is lighter and more mobile than the pressure member 350, making it easier to align with the display substrate 20 and improving accuracy.

[0167] The gas pressure regulator 353 opens the gas valve, and gas is filled into the sealed space 350-S between the transparent plate 351 and the elastic body 352 through the gas conduit 354. As the gas is filled into the sealed space 350-S, the pressure inside the sealed space 350-S increases, and the elastic body 352 expands downward, i.e., toward the display substrate 20, generating a downward pressure.

[0168] The elastic body 352 expands downward when filled with gas, and uniform pressure is applied to the surface of the light emitting element LE arranged on the display substrate 20. In contrast, if the light-transmitting plate 351 presses the display substrate 20 on the photomask 310 without the elastic body 352, thermal deformation occurs in the light-transmitting plate 351 due to laser light irradiation, and the pressure applied to the display substrate 20 becomes less uniform.

[0169] 11, the laser irradiation unit 500 irradiates laser light toward the lower surface of the photomask 310. The light irradiated from the laser irradiation unit 500 passes through the openings 312-O defined by the light-blocking pattern layer 312 and is applied to the plurality of light-emitting elements LE arranged on the display substrate 20. That is, only the laser light that passes through the openings 312-O corresponding to the display area DPA can be applied to the plurality of light-emitting elements LE arranged on the display substrate 20.

[0170] In contrast, the laser light applied to the light-shielding pattern layer 312 corresponding to the non-display area NDA of the display substrate 20 cannot pass through the light-shielding pattern layer 312. Therefore, it is possible to block or suppress damage to the display substrate 20 that may occur when the laser light is irradiated onto the non-display area NDA of the display substrate 20, which does not require bonding.

[0171] 12, when laser irradiation by laser irradiation unit 500 is completed, gas pressure regulator 353 can discharge gas from sealed space 350-S to reduce the pressure in sealed space 350-S. When the pressure in sealed space 350-S is reduced, elastic body 352, which has expanded downward, returns to its original state, reducing the pressure.

[0172] Thereafter, the plate transport member 320 can move the light-transmitting plate 351 in a direction away from the display substrate 20 .

[0173] According to an embodiment, even in the case of a display substrate 20 with a large area, uniform pressure distribution is possible during bonding of the light emitting elements LE on the display substrate 20 using a laser.

[0174] FIG. 13 is a side cross-sectional view schematically showing a display panel manufacturing apparatus according to another embodiment, and FIG. 14 is a side cross-sectional view showing a micro LED transfer method using the display panel manufacturing apparatus of FIG.

[0175] 13 and 14, this differs from the display panel manufacturing apparatus described with reference to Figures 7 to 12 in that the light-shielding pattern layer 312 of the photomask 310 is arranged to face the laser irradiation unit 500. Descriptions that overlap with the embodiment of Figures 7 to 12 will be omitted.

[0176] 13, the photomask 310 may be formed of multiple layers. The photomask 310 may include a base layer 311 and a light-shielding pattern layer 312. The photomask 310 may further include a protective layer 313 on the light-shielding pattern layer 312, although the protective layer 313 may be omitted.

[0177] The base layer 311 may be disposed to face the support part 200. The base layer 311 is formed in the shape of a transparent or translucent flat plate including at least one transparent material such as glass, quartz, silicon, etc. The laser beam passes through the base layer 311 from the front and back surfaces, which are opposite to each other.

[0178] The base layer 311 may be planar and cover the entire display substrate 20 .

[0179] The light-shielding pattern layer 312 is disposed on one surface of the base layer 311 and includes a pattern having light-shielding properties. The light-shielding pattern layer 312 can be disposed on the front surface of the base layer 311 so as to face the laser irradiation unit 500. The thickness of the light-shielding pattern layer 312 is not particularly limited, but can have a film thickness in the range of 80 nm to 180 nm. If the layer is too thin, it becomes difficult to obtain the desired light-shielding properties, and if the layer is too thick, it becomes difficult to process the light-shielding pattern with high precision.

[0180] The light-shielding pattern layer 312 is not particularly limited as long as it is a material having light-shielding properties, and examples thereof include chromium (Cr), chromium oxynitride (CrON), chromium nitride (CrN), molybdenum silicide oxide (MoSiO), molybdenum silicide oxynitride (MoSiON), tantalum oxide (TaO), tantalum silicide oxide (TaSiO), etc. In one embodiment, chromium (Cr) is selected for the light-shielding pattern layer 312.

[0181] The light-shielding pattern layer 312 includes an opening. A laser beam can pass through the opening. Therefore, the opening can define a transmission area for the laser beam. Here, light irradiated from the laser irradiation unit 500 passes through the opening of the light-shielding pattern layer 312 and is applied to a plurality of light-emitting elements LE arranged on the display substrate 20.

[0182] If the light-shielding pattern layer 312 is farther from the light-emitting element LE, diffraction of light occurs at the boundary of the opening, and an error may occur between the opening and the transmission area of ​​the laser beam.

[0183] The protective layer 313 is disposed on the base layer 311 on which the light-shielding pattern layer 312 is provided, and protects the surface of the light-shielding pattern layer 312 to prevent damage to the light-shielding pattern. The thickness of the protective layer 313 is not particularly limited, but may be in the range of about 2 to 3 μm. The protective layer 313 may be made of a transparent or translucent material, including a transparent material, such as a transparent resin.

[0184] The mounting member 315 may be attached to one outer surface of the photomask 310. For example, the mounting member 315 may be attached to the front outer surface of the protective layer 313. The mounting member 315 may be, for example, any one of an electrostatic chuck, an adhesive chuck, a vacuum chuck, and a porous vacuum chuck. The mounting member 315 may also be, but is not limited to, a clamp. The mounting member 315 does not overlap with the path of the laser light.

[0185] 14, the gas pressure regulator 353 opens the gas valve and fills the sealed space 350-S between the transparent plate 351 and the elastic body 352 with gas through the gas conduit 354. As the gas fills the sealed space 350-S, the internal pressure of the sealed space 350-S increases and expands downward, i.e., toward the display substrate 20, generating a downward pressure.

[0186] The elastic body 352 expands downward when filled with gas, and a uniform pressure is applied to the surface of the light emitting element LE arranged on the display substrate 20 .

[0187] The laser irradiation unit 500 irradiates laser light toward the light-transmitting plate 351 on the lower surface. The light irradiated from the laser irradiation unit 500 passes through the openings 312-O defined by the light-blocking pattern layer 312 and is applied to the plurality of light-emitting elements LE arranged on the display substrate 20. That is, only the laser light that passes through the openings 312-O corresponding to the display area DPA can be applied to the plurality of light-emitting elements LE arranged on the display substrate 20.

[0188] FIG. 15 is a side cross-sectional view that schematically shows a display panel manufacturing apparatus according to another embodiment, and FIG. 16 is a front view that shows the shape of the light-shielding layer of the photomask shown in FIG.

[0189] 15 and 16 differ from those of FIGS. 7 to 11 in that the light-blocking pattern layer 312 of the photomask 310 has openings corresponding to the regions between the light-emitting elements LE, excluding the regions corresponding to the light-emitting elements LE arranged on the display substrate 20. Descriptions overlapping with those of the embodiments of FIGS. 7 to 12 will be omitted.

[0190] The light-shielding pattern layer 312 of the photomask 310 may be disposed in an outer region of the photomask 310 overlapping with the non-display region NDA, which is an outer region of the display substrate 20, except for the display region DPA of the display substrate 20 where the plurality of light-emitting elements LE are arranged.

[0191] 15 and 16, the photomask 310 may be formed of multiple layers. The photomask 310 may include a base layer 311 and a light-shielding pattern layer 312. The photomask 310 may further include a protective layer 313 on the light-shielding pattern layer 312, although the protective layer 313 may be omitted.

[0192] The base layer 311 may be disposed to face the support part 200. The base layer 311 may be formed as a transparent or translucent flat plate made of at least one transparent material such as glass, quartz, silicon, etc. The laser beam passes through the base layer 311 from the front and back surfaces, which are opposite to each other.

[0193] The light-shielding pattern layer 312 is disposed on the back surface, which is one surface of the base layer 311, and includes a pattern having light-shielding properties. The thickness of the light-shielding pattern layer 312 is not particularly limited, but may have a film thickness in the range of 80 nm to 180 nm. If the layer is too thin, it becomes difficult to obtain the desired light-shielding properties, and if the layer is too thick, it becomes difficult to process the light-shielding pattern with high precision.

[0194] The light-shielding pattern layer 312 is not particularly limited as long as it is a material having light-shielding properties, and examples thereof include chromium (Cr), chromium oxynitride (CrON), chromium nitride (CrN), molybdenum silicide oxide (MoSiO), molybdenum silicide oxynitride (MoSiON), tantalum oxide (TaO), tantalum silicide oxide (TaSiO), etc. In one embodiment, chromium (Cr) is selected for the light-shielding pattern layer 312.

[0195] The light-blocking pattern layer 312 may be arranged on the base layer 311 to correspond to a non-display area NDA, which is an outer area of ​​the display substrate 20, excluding a display area DPA of the display substrate 20 where a plurality of light-emitting elements LE are arranged. In addition, the light-blocking pattern layer 312 may be arranged on the base layer 311 to correspond to an area between the light-emitting elements LE, excluding an area corresponding to the light-emitting elements LE arranged on the display substrate 20. That is, the light-blocking pattern layer 312 may include a plurality of openings 312-OS corresponding to each of the plurality of light-emitting elements LE arranged on the display substrate 20.

[0196] In other words, the light-shielding pattern layer 312 is arranged on the back surface, which is one surface of the flat, plate-shaped base layer 311, and the light-shielding pattern layer 312 may include a plurality of light-shielding pattern layers 312 that can irradiate laser light only to a plurality of light-emitting elements LE arranged on the display substrate 20.

[0197] FIG. 17 is a side cross-sectional view showing a transfer method of a micro LED using the manufacturing apparatus shown in FIG.

[0198] 16 and 17, the pressure member 350 can expand the elastic body 352 toward the display substrate 20 and press the light emitting elements LE arranged on the display substrate 20 against the display substrate 20.

[0199] The laser irradiation unit 500 irradiates the display substrate 20 with laser light through the photomask 310. In particular, the laser irradiation unit 500 irradiates the laser light in the direction of the support unit 200 on the lower surface, and the light irradiated from the laser irradiation unit 500 passes through each of the plurality of openings 312-OS of the photomask 310 and is applied to each of the plurality of light-emitting elements LE arranged on the display substrate 20.

[0200] In contrast, the laser light applied to the light-shielding pattern layer 312 of the photomask 310 cannot pass through the light-shielding pattern layer 312. Therefore, of the laser light irradiated from the laser irradiation unit 500, only the light that has passed through each of the plurality of openings 312-OS of the light-shielding pattern layer 312 can be applied to each of the plurality of light-emitting elements LE arranged on the display substrate 20. In other words, only the laser light that has passed through each of the plurality of openings 312-OS of the photomask 310 can be applied to each of the plurality of light-emitting elements LE arranged on the display substrate 20.

[0201] FIG. 18 is a side cross-sectional view schematically showing a display panel manufacturing apparatus according to another embodiment, and FIG. 19 is a side cross-sectional view showing a micro LED transfer method using the display panel manufacturing apparatus of FIG.

[0202] 18 and 19, this differs from the display panel manufacturing apparatus described with reference to Figures 15 to 17 in that the light-shielding pattern layer 312 of the photomask 310 is arranged to face the laser irradiation unit 500. Descriptions that overlap with the embodiment of Figures 15 to 17 will be omitted.

[0203] 18 and 19, the light-shielding pattern layer 312 is disposed on one surface of the base layer 311 and includes a pattern having light-shielding properties. The light-shielding pattern layer 312 may be disposed on the front surface of the base layer 311 so as to face the laser irradiation unit 500. The thickness of the light-shielding pattern layer 312 is not particularly limited, but may be in the range of 80 nm to 180 nm. If the layer is too thin, it becomes difficult to obtain the desired light-shielding properties, and if the layer is too thick, it becomes difficult to process the light-shielding pattern with high precision.

[0204] The light-shielding pattern layer 312 is not particularly limited as long as it is a material having light-shielding properties, and examples thereof include chromium (Cr), chromium oxynitride (CrON), chromium nitride (CrN), molybdenum silicide oxide (MoSiO), molybdenum silicide oxynitride (MoSiON), tantalum oxide (TaO), tantalum silicide oxide (TaSiO), etc. In one embodiment, chromium (Cr) is selected for the light-shielding pattern layer 312.

[0205] The light-shielding pattern layer 312 may be arranged on the base layer 311 to correspond to a non-display area NDA, which is an outer area of ​​the display substrate 20, excluding a display area DPA of the display substrate 20 in which a plurality of light-emitting elements LE are arranged. In addition, the light-shielding pattern layer 312 may be arranged on the base layer 311 to correspond to areas between the light-emitting elements LE, excluding areas corresponding to each of the plurality of light-emitting elements LE arranged on the display substrate 20. That is, the light-shielding pattern layer 312 may include a plurality of openings 312-OS corresponding to each of the plurality of light-emitting elements LE arranged on the display substrate 20.

[0206] In other words, the light-shielding pattern layer 312 is disposed on one surface of the flat base layer 311 , and may include light-shielding pattern layers 312 corresponding to the light-emitting elements LE arranged on the display substrate 20 .

[0207] FIG. 20 is a side cross-sectional view schematically showing a display panel manufacturing apparatus according to another embodiment, and FIG. 21 is a side cross-sectional view showing a micro LED transfer method using the display panel manufacturing apparatus of FIG.

[0208] 20 and 21, the display panel manufacturing apparatus differs from the display panel manufacturing apparatus described with reference to Figures 13 and 14 in that it includes a metal mask assembly 1310 instead of a photomask 310. Descriptions that overlap with the embodiment of Figures 13 and 14 will be omitted.

[0209] 20 and 21, the pressure applying unit 300 may include a metal mask assembly 1310, a mounting member 1315, a mask frame 1320, and a pressure applying member 350.

[0210] The metal mask assembly 1310 may include a transparent layer 1311 and a metal mask 1312. The transparent layer 1311 is formed in the shape of a transparent or translucent flat plate including at least one transparent material such as glass, quartz, silicon, etc. The transparent layer 1311 may also be formed of a silicon multilayer, a silicon-PET (polyethylene terephthalate) laminate layer, PDMS (polydimethylsiloxane), etc.

[0211] In the light-transmitting layer 1311, the laser light passes through the front and back surfaces, which are opposite to each other.

[0212] The metal mask 1312 may be an open mask having a light-blocking pattern disposed on one surface of the light-transmitting layer 1311. For example, the metal mask 1312 may be disposed on the front surface of the light-transmitting layer 1311 so as to face the laser irradiation unit 500.

[0213] The material of the metal mask 1312 is not particularly limited as long as it reflects the laser light, but examples thereof include metal materials such as aluminum.

[0214] The metal mask 1312 may have an area larger than the range of the laser irradiated from the laser irradiating unit 500. The metal mask 1312 includes one opening. The laser beam can pass through the opening. Therefore, the opening can define a transmission area of ​​the laser beam. Here, the light irradiated from the laser irradiating unit 500 passes through one opening of the metal mask 1312 corresponding to the display area DPA of the display substrate 20 and is applied to the plurality of light emitting elements LE arranged on the display substrate 20.

[0215] The mounting member 1315 may be attached to one outer surface of the transparent layer 1311. For example, the mounting member 1315 may be disposed on the front outer surface of the transparent layer 1311. The mounting member 1315 may be, for example, any one of an electrostatic chuck, an adhesive chuck, a vacuum chuck, and a porous vacuum chuck. The mounting member 1315 may also be, but is not limited to, a clamp. The mounting member 1315 does not overlap with the path of the laser light.

[0216] The mask frame 1320 may be attached to one surface of the outside of the metal mask 1312. For example, the mask frame 1320 may be attached to the front surface of the metal mask 1312. The mask frame 1320 does not overlap with the path of the laser light.

[0217] The pressure member 350 is disposed in front of the metal mask assembly 1310 and can move toward the display substrate 20 .

[0218] The pressure member 350 may include a light-transmitting plate 351 , an elastic body 352 , a gas pressure regulator 353 , a gas conduit 354 , and a holding frame 355 .

[0219] The gas pressure regulator 353 opens the gas valve, and fills the sealed space 350 -S between the light-transmitting plate 351 and the elastic body 352 with gas via the gas conduit 354 .

[0220] As the gas is filled into the sealed space 350-S, the pressure inside the sealed space 350-S increases, causing the elastic body 352 to expand downward, that is, toward the display substrate 20, thereby generating a pressure in the downward direction.

[0221] The elastic body 352 expands downward when filled with gas, and can pressurize the light-transmitting layer 1311 through the opening of the metal mask assembly 1310 .

[0222] The metal mask assembly 1310 can be disposed on the display substrate 20. Also, the openings defined by the metal mask 1312 of the metal mask assembly 1310 can be aligned with the display area DPA of the display substrate 20. Because the metal mask assembly 1310 is lighter than the pressure member 350, it can be easily aligned with the display substrate 20, thereby improving alignment accuracy.

[0223] FIG. 22 is a side cross-sectional view schematically showing a display panel manufacturing apparatus according to another embodiment, and FIG. 23 is a side cross-sectional view showing a micro LED transfer method using the display panel manufacturing apparatus of FIG.

[0224] 22 and 23 differ from those in Figures 20 and 21 in that a metal mask 1312 of a metal mask assembly 1310 has a plurality of openings corresponding to the regions between the light-emitting elements LE, excluding the regions corresponding to the plurality of light-emitting elements LE arranged on the display substrate 20. Descriptions overlapping with those in Figures 20 and 21 will be omitted.

[0225] The metal mask 1312 of the metal mask assembly 1310 may overlap the non-display area NDA, which is an outer area of ​​the display substrate 20, except for the display area DPA of the display substrate 20 where the plurality of light emitting elements LE are arranged.

[0226] The metal mask 1312 may be a fine metal mask having a light-blocking pattern disposed on one surface of the transparent layer 1311. For example, the metal mask 1312 may be disposed on the front surface of the transparent layer 1311 so as to face the laser irradiation unit 500.

[0227] The metal mask 1312 may be arranged to correspond to a non-display area NDA, which is an outer area of ​​the display substrate 20, excluding a display area DPA of the display substrate 20 where a plurality of light-emitting elements LE are arranged. The metal mask 1312 may also be arranged on the transparent layer 1311 to correspond to each of the areas between the light-emitting elements LE, excluding areas corresponding to each of the light-emitting elements LE arranged on the display substrate 20. That is, the metal mask 1312 may include a plurality of openings 1312-OS corresponding to each of the light-emitting elements LE arranged on the display substrate 20.

[0228] In other words, the metal mask 1312 is disposed on one surface of the flat, plate-shaped transparent layer 1311 , and the metal mask 1312 may include metal masks 1312 corresponding to the light emitting elements LE arranged on the display substrate 20 .

[0229] The metal mask 1312 may have a slope on the side of the opening 1312-OS. The width of the opening 1312-OS may differ from the width at the top and bottom of the metal mask 1312. For example, the opening 1312-OS of the metal mask 1312 may be wider at the top.

[0230] The pressure member 350 is disposed in front of the metal mask assembly 1310 and can move toward the display substrate 20 .

[0231] The pressure member 350 may include a light-transmitting plate 351 , an elastic body 352 , a gas pressure regulator 353 , a gas conduit 354 and a holding frame 355 .

[0232] The gas pressure regulator 353 opens the gas valve, and fills the sealed space 350 -S between the light-transmitting plate 351 and the elastic body 352 with gas via the gas conduit 354 .

[0233] As the gas is filled into the sealed space 350-S, the pressure inside the sealed space 350-S increases, causing the elastic body 352 to expand downward, that is, toward the display substrate 20, generating a pressure in the downward direction.

[0234] The elastic body 352 may expand downward by filling with gas, and pressurize the light-transmitting layer 1311 through the metal mask assembly 1310. When expanding downward, the elastic body 352 may have an uneven shape along the plurality of openings 1312-OS of the metal mask assembly 1310. For example, the elastic body 352 may be relatively concave downward in areas overlapping the plurality of openings 1312-OS of the metal mask assembly 1310, and relatively convex upward in areas overlapping the pattern between the plurality of openings 1312-OS.

[0235] FIG. 24 is a side cross-sectional view schematically showing a display panel manufacturing apparatus according to another embodiment, and FIG. 25 is a side cross-sectional view showing a micro LED transfer method using the display panel manufacturing apparatus of FIG.

[0236] 24 and 25, the display panel manufacturing apparatus may include a support unit 200, a pressure unit 300, and a laser irradiation unit 500. The support unit 200 and the laser irradiation unit 500 have been described with reference to FIGS. 7 to 11, and therefore detailed description thereof will be omitted.

[0237] 24 and 25, the pressure unit 300 may include a pressure plate 2310, a plate transfer member 2320, a reflective mask 2330, a mask frame 2340, an optical member 2350, and a light absorbing member 2360.

[0238] The pressure plate 2310 is disposed in front of the support part 200, spaced apart from the support part 200 in the third direction DR3, and at least one of the outer peripheral surface in the side direction of the pressure plate 2310, the outer parts of the front and rear sides is connected to the side plate transfer member 2320.

[0239] The pressure plate 2310 is formed as a transparent or translucent flat plate made of at least one transparent material such as glass, quartz, silicon, etc. The pressure plate 2310 transmits laser light applied to the front and rear surfaces, which are opposite to each other.

[0240] The pressure plate 2310 can be moved toward the display substrate 20 by the plate moving member 2320 or in the opposite direction away from the display substrate 20. The pressure plate 2310 can be moved toward the display substrate 20 by the plate moving member 2320 and pressurize the plurality of light-emitting elements LE arranged on the display substrate 20 toward the display substrate 20.

[0241] The plate transfer member 2320 is disposed on at least one side of the pressure plate 2310 and is connected to at least one of the outer peripheral surface of the pressure plate 2310 in the side direction, and the outer portions of the front and rear sides.

[0242] The plate transfer member 2320 includes at least one transfer module, and can move toward the support unit 200 or in the opposite direction away from the support unit 200 using the at least one transfer module. To this end, the plate transfer member 2320 is connected to a pressure plate 2310 disposed in front of the support unit 200 and can move the pressure plate 2310 toward the display substrate 20 or in the opposite direction away from the display substrate 20. The plate transfer member 2320 moves the pressure plate 2310 toward the display substrate 20, and the pressure plate 2310 can press the light emitting elements LE arranged on the display substrate 20 against the display substrate 20. The transfer module of the plate transfer member 2320 may include at least one conveyor, motor, chain, roller, gear, etc.

[0243] The reflective mask 2330 is disposed on one surface of the pressure plate 2310 and may be an open mask including a light-blocking pattern. The reflective mask 2330 may be disposed between the pressure plate 2310 and the laser irradiation unit 500. The reflective mask 2330 may be disposed so as to be tilted relative to the pressure plate 2310. For example, the reflective mask 2330 may be disposed so that the distance between the reflective mask 2330 and the pressure plate 2310 increases from one end to the other. In the example of FIG. 24 , the plane of the pressure plate 2310 is aligned along a predetermined direction. For example, the plane of the pressure plate 2310 is aligned along the direction in which the light-emitting elements LE are arranged. Meanwhile, the direction formed by one end and the other end of the reflective mask 2330 facing each other across the opening intersects with the predetermined direction of the plane of the pressure plate 2310. In other words, the direction formed by the one end and the other end of the reflective mask 2330 forms a predetermined angle with respect to the predetermined direction of the plane of the pressure plate 2310.

[0244] The reflective mask 2330 is not particularly limited as long as it is made of a material that reflects laser light, but examples thereof include metal materials such as aluminum.

[0245] The reflective mask 2330 may have an area larger than the area of ​​the laser irradiated from the laser irradiator 500. The reflective mask 2330 includes one opening. The laser beam can pass through the opening. Therefore, the opening can define a transmission area of ​​the laser beam. Here, the light irradiated from the laser irradiator 500 passes through one opening corresponding to the display area DPA of the display substrate 20 by the reflective mask 2330 and is applied to the plurality of light emitting elements LE arranged on the display substrate 20.

[0246] The reflective mask 2330 may overlap the outer region of the pressure plate 2310 in the thickness direction, except for the display region DPA of the display substrate 20 where the light emitting elements LE are arranged, and the outer region of the pressure plate 2310 corresponding to the non-display region NDA of the display substrate 20.

[0247] The mask frame 2340 is attached to one outer surface of the reflective mask 2330 to support the reflective mask 2330. For example, the mask frame 2340 may be attached to the front surface of the reflective mask 2330. The mask frame 2340 does not overlap with the path of the laser light.

[0248] Optical member 2350 and light absorbing member 2360 may be arranged parallel to the tilted direction of reflection mask 2330. Optical member 2350 and light absorbing member 2360 may be arranged tilted at a preset tilt so as to face the direction in which reflection mask 2330 is arranged. For example, light absorbing member 2360 is arranged on the path of light irradiated from laser irradiation unit 500 and reflected by reflection mask 2330. Light absorbing member 2360 and optical member 2350 are arranged so as not to overlap with the path of light irradiated from laser irradiation unit 500.

[0249] Optical element 2350 serves to focus incident light and may include one or more lenses. Optical element 2350 is disposed between reflective mask 2330 and light absorbing element 2360 so as to be tilted toward the direction in which light absorbing element 2360 is disposed. That is, optical element 2350 is disposed at a position where it can receive light reflected by reflective mask 2330 and focus the received light, and light absorbing element 2360 is disposed at a position where it can absorb the focused light.

[0250] Because the light is focused by optical element 2350 , light absorbing element 2360 can have an area smaller than opening 2330 -O of reflective mask 2330 .

[0251] According to an embodiment, a portion of the laser irradiated from the laser irradiator 500 is applied to the display area DPA of the display substrate 20 through the opening 2330-O of the reflective mask 2330, and a portion of the laser irradiated from the laser irradiator 500 may be applied to and reflected by the reflective mask 2330 corresponding to the non-display area NDA of the display substrate 20. The light reflected from the reflective mask 2330 is focused via the optical member 2350 and absorbed by the light absorbing member 2360. Therefore, of the laser light irradiated from the laser irradiator 500, only light that has passed through one opening 2330-O corresponding to the display area DPA of the display substrate 20 can be applied to the plurality of light emitting elements LE arranged on the display substrate 20. In other words, only the laser light that has passed through the opening 2330-O corresponding to the display area DPA can be applied to the plurality of light emitting elements LE arranged on the display substrate 20.

[0252] 26a-26d are cross-sectional views of a metal mask according to one embodiment of FIG.

[0253] 26a to 26d, the reflective mask 2330 has one opening 2330-O. The side of the opening 2330-O of the reflective mask 2330 may be inclined. The opening 2330-O of the reflective mask 2330 may have a first side S1 and a second side S2. The first side S1 and the second side S2 face each other. In other words, the reflective mask 2330 has the first side S1 and the second side S2 facing each other at the opening 2330-O, and are inclined.

[0254] 26a and 26b, a first angle θ1 formed between one surface of the reflective mask 2330 and a first side surface S1 and a second angle θ2 formed between one surface of the reflective mask 2330 and a second side surface S2 may be different from each other. For example, the opening of the reflective mask 2330 may be trapezoidal or parallelogram-shaped.

[0255] As shown in Figure 26a, the first angle θ1 formed between one surface of the reflective mask 2330 and the first side surface S1 may be an obtuse angle greater than 90 degrees, and the second angle θ2 formed between one surface of the reflective mask 2330 and the second side surface S2 may be an acute angle less than 90 degrees. Alternatively, as shown in Figure 26b, the first angle θ1 formed between one surface of the reflective mask 2330 and the first side surface S1 may be an obtuse angle greater than 90 degrees, and the second angle θ2 formed between one surface of the reflective mask 2330 and the second side surface S2 may be a right angle.

[0256] 26c and 26d, the first angle θ1 formed between one surface of the reflective mask 2330 and the first side surface S1 and the second angle θ2 formed between one surface of the reflective mask 2330 and the second side surface S2 may be the same. As shown in Fig. 26c, the first angle θ1 formed between one surface of the reflective mask 2330 and the first side surface S1 and the second angle θ2 formed between one surface of the reflective mask 2330 and the second side surface S2 are obtuse angles greater than 90 degrees and may be the same. For example, the opening of the reflective mask 2330 may be an isosceles trapezoid.

[0257] 26d, the first angle θ1 formed between one surface of the reflective mask 2330 and the first side surface S1, and the second angle θ2 formed between one surface of the reflective mask 2330 and the second side surface S2 are obtuse angles exceeding 90 degrees, but the inclined surface may have a curvature. The inclination becomes gentler as it goes up, but this is not limited to this.

[0258] FIG. 27 is a side cross-sectional view schematically showing a display panel manufacturing apparatus according to another embodiment, and FIG. 28 is a side cross-sectional view showing a micro LED transfer method using the display panel manufacturing apparatus of FIG.

[0259] 27 and 28, the display panel manufacturing apparatus differs from that shown in Figures 24 and 25 in that a reflective mask 2330 has a plurality of openings corresponding to regions between the plurality of light-emitting elements LE, excluding regions corresponding to the light-emitting elements LE arranged on the display substrate 20. Descriptions of the embodiment shown in Figures 27 and 28 that overlap with the embodiment shown in Figures 24 to 25 will be omitted.

[0260] The reflective mask 2330 is disposed on one side of the pressure plate 2310 and may be a fine pattern mask including a light-blocking pattern. The reflective mask 2330 may be disposed between the pressure plate 2310 and the laser irradiation unit 500. The reflective mask 2330 may be disposed so as to be inclined with respect to the pressure plate 2310. For example, the reflective mask 2330 may be disposed so that the distance between the reflective mask 2330 and the pressure plate 2310 becomes longer from one end to the other end.

[0261] The reflective mask 2330 is not particularly limited as long as it is made of a material that reflects laser light, but examples thereof include metal materials such as aluminum.

[0262] The reflective mask 2330 may have an area larger than the range of the laser irradiated from the laser irradiation unit 500. The reflective mask 2330 may be disposed to overlap in the thickness direction with the non-display area NDA, which is an outer area of ​​the display substrate 20, excluding the display area DPA of the display substrate 20 on which the plurality of light-emitting elements LE are arranged. Furthermore, the reflective mask 2330 may be formed on the pressure plate 2310 to correspond to the areas between the light-emitting elements LE, excluding the areas corresponding to the plurality of light-emitting elements LE arranged on the display substrate 20. That is, the reflective mask 2330 may include a plurality of openings 2330-OS corresponding to the plurality of light-emitting elements LE arranged on the display substrate 20.

[0263] The plurality of openings 2330-OS of the reflective mask 2330 can be aligned and arranged so as to overlap with the plurality of light-emitting elements LE in the thickness direction, respectively. Therefore, the reflective mask 2330 can irradiate laser light only onto the light-emitting elements LE arranged on the display substrate 20, and can prevent the laser light from irradiating the display substrate 20 corresponding to the separation spaces between the light-emitting elements LE.

[0264] 29a-29d are cross-sectional views of the metal mask according to one embodiment of FIG.

[0265] 29a to 29d, the reflective mask 2330 has openings 2330-OS arranged in regions corresponding to the light-emitting elements LE arranged on the display substrate 20. The sides of the openings 2330-OS of the reflective mask 2330 may be inclined. Each of the openings 2330-OS of the reflective mask 2330 may have a first side surface SS1 and a second side surface SS2. The first side surface SS1 and the second side surface SS2 face each other. In other words, the reflective mask 2330 has the first side surface S1 and the second side surface S2 facing each other, in each of the openings 2330-OS.

[0266] 29a and 29b, a first angle θ1 formed between one surface of the reflective mask 2330 and the first side surface SS1 and a second angle θ2 formed between one surface of the reflective mask 2330 and the second side surface SS2 may be different from each other.

[0267] As shown in Figure 29a, the first angle θ1 formed between one surface of the reflective mask 2330 and the first side surface SS1 may be an obtuse angle greater than 90 degrees, and the second angle θ2 formed between one surface of the reflective mask 2330 and the second side surface SS2 may be an acute angle less than 90 degrees. Alternatively, as shown in Figure 29b, the first angle θ1 formed between one surface of the reflective mask 2330 and the first side surface S1 may be an obtuse angle greater than 90 degrees, and the second angle θ2 formed between one surface of the reflective mask 2330 and the second side surface S2 may be a right angle.

[0268] 29c and 29d, the first angle θ1 formed between one surface of the reflective mask 2330 and the first side surface S1 and the second angle θ2 formed between one surface of the reflective mask 2330 and the second side surface S2 may be the same. As shown in FIG. 29c, the first angle θ1 formed between one surface of the reflective mask 2330 and the first side surface S1 and the second angle θ2 formed between one surface of the reflective mask 2330 and the second side surface S2 are obtuse angles greater than 90 degrees and may be the same. As shown in FIG. 29d, the first angle θ1 formed between one surface of the reflective mask 2330 and the first side surface S1 and the second angle θ2 formed between one surface of the reflective mask 2330 and the second side surface S2 are obtuse angles greater than 90 degrees, but the inclined surface may have a curvature. The inclination becomes gentler as it goes up, but this is not limited to this.

[0269] 30 is a side cross-sectional view schematically showing a display panel manufacturing apparatus according to another embodiment, and FIG. 31 is a side cross-sectional view showing a micro LED transfer method using the display panel manufacturing apparatus of FIG.

[0270] 30 and 31, the display panel manufacturing apparatus differs from that shown in Figures 24 and 25 in that it does not include an optical member 2350. Descriptions that overlap with the embodiment shown in Figures 24 and 25 will be omitted.

[0271] 30 and 31 , the light absorbing member 2360 absorbs the laser light reflected from the reflection mask 2330. The light absorbing member 2360 may be disposed at a predetermined inclination so as to face the direction in which the reflection mask 2330 is disposed. For example, the light absorbing member 2360 is disposed on the path of light that is emitted from the laser irradiation unit 500 and reflected by the reflection mask 2330. The light absorbing member 2360 is disposed so as not to overlap with the path of the light that is emitted from the laser irradiation unit 500.

[0272] The light absorbing member 2360 may have an area larger than the opening 2330 -O of the reflective mask 2330 .

[0273] 32 is a side cross-sectional view schematically showing a display panel manufacturing apparatus according to another embodiment, and FIG. 33 is a side cross-sectional view showing a micro LED transfer method using the display panel manufacturing apparatus of FIG.

[0274] 32 and 33, the display panel manufacturing apparatus differs from that of Figures 30 and 31 in that a reflective mask 2330 is arranged to correspond to the areas between the light-emitting elements LE, excluding the areas corresponding to each of the plurality of light-emitting elements LE arranged on the display substrate 20. In the embodiment of Figures 32 and 33, descriptions that overlap with the embodiment of Figures 30 and 31 will be omitted.

[0275] The reflective mask 2330 is disposed on one side of the pressure plate 2310 and may be a fine pattern mask including a light-blocking pattern. The reflective mask 2330 may be disposed between the pressure plate 2310 and the laser irradiation unit 500. The reflective mask 2330 may be disposed at a predetermined inclination relative to the pressure plate 2310. For example, the reflective mask 2330 may be disposed such that the distance between the reflective mask 2330 and the pressure plate 2310 increases from one end to the other.

[0276] The reflective mask 2330 may have an area larger than the range of the laser irradiated from the laser irradiation unit 500. The reflective mask 2330 may be disposed to overlap in the thickness direction with the non-display area NDA, which is an outer area of ​​the display substrate 20, excluding the display area DPA of the display substrate 20 on which the plurality of light-emitting elements LE are arranged. Furthermore, the reflective mask 2330 may be formed on the pressure plate 2310 to correspond to the areas between the light-emitting elements LE, excluding the areas corresponding to the plurality of light-emitting elements LE arranged on the display substrate 20. That is, the reflective mask 2330 may include a plurality of openings 2330-OS corresponding to the plurality of light-emitting elements LE arranged on the display substrate 20.

[0277] The plurality of openings 2330-OS of the reflective mask 2330 can be aligned and arranged so as to overlap with the plurality of light-emitting elements LE in the thickness direction, respectively. Therefore, the reflective mask 2330 can irradiate laser light only onto the light-emitting elements LE arranged on the display substrate 20, and can prevent the laser light from irradiating the display substrate 20 corresponding to the separation spaces between the light-emitting elements LE.

[0278] 34 is a side cross-sectional view schematically showing a display panel manufacturing apparatus according to another embodiment, and FIG. 35 is a side cross-sectional view showing a micro LED transfer method using the display panel manufacturing apparatus of FIG.

[0279] 34 and 35, the display panel manufacturing apparatus differs from that shown in FIGS. 24 and 25 in that a reflective mask 2330 is arranged parallel to a plate transfer member 2320, and that a plurality of light absorbing members 2360 are arranged at a predetermined inclination relative to the reflective mask 2330. In the embodiment shown in FIGS. 34 and 35, descriptions that overlap with those of the embodiment shown in FIGS. 24 and 25 will be omitted.

[0280] 34 and 35, the laser irradiation unit 500 can irradiate divergent light emitted from a laser light source 510 in multiple directions.

[0281] The pressure unit 300 may include a pressure plate 2310, a plate transfer member 2320, a reflective mask 2330, a mask frame 2340, and a light absorbing member 2360. The pressure plate 2310 and the plate transfer member 2320 have been described with reference to Figures 24 and 25, so detailed description thereof will be omitted.

[0282] The reflective mask 2330 includes one opening 2330-O. The plane of the reflective mask 2330 and the plane of the pressure plate 2310 are generally parallel to each other. A laser beam can pass through the opening 2330-O. Therefore, the opening 2330-O can define a transmission area for the laser beam. Here, light irradiated from the laser irradiation unit 500 passes through the opening 2330-O of the reflective mask 2330 and is applied to a plurality of light emitting elements LE arranged on the display substrate 20.

[0283] The reflective mask 2330 is attached to the pressure plate 2310 so as to overlap it in the thickness direction. The reflective mask 2330 is disposed apart from the pressure plate 2310, but is not limited to this.

[0284] The smaller the size of the opening 2330 -O of the reflective mask 2330 , the farther the reflective mask 2330 is from the pressure plate 2310 and the closer the reflective mask 2330 can be positioned to the laser irradiation unit 500 .

[0285] Light absorbing member 2360 absorbs the laser light reflected from reflective mask 2330. Light absorbing member 2360 can be placed on reflective mask 2330 by a mounting member.

[0286] The light absorbing member 2360 can be placed at a predetermined inclination so as to face the traveling direction of the laser light reflected from the reflection mask 2330 by the mounting member.

[0287] Therefore, the laser light applied to the reflective mask 2330 is reflected in the direction of the light absorbing member 2360. Therefore, of the laser light irradiated from the laser irradiation unit 500, only the light that has passed through the openings of the reflective mask 2330 can be applied to the plurality of light-emitting elements LE arranged on the display substrate 20. In other words, only the laser light that has passed through the openings 2330-O of the reflective mask 2330 can be applied to the plurality of light-emitting elements LE arranged on the display substrate 20.

[0288] 36a and 36b are cross-sectional views of a metal mask according to one embodiment of FIG.

[0289] 36a and 36b, the first angle θ1 formed between one surface of the reflective mask 2330 and the first side surface S1 and the second angle θ2 formed between one surface of the reflective mask 2330 and the second side surface S2 may be the same. As shown in FIG. 36a, the first angle θ1 formed between one surface of the reflective mask 2330 and the first side surface S1 and the second angle θ2 formed between one surface of the reflective mask 2330 and the second side surface S2 are obtuse angles exceeding 90 degrees and may be the same. As shown in FIG. 36b, the first angle θ1 formed between one surface of the reflective mask 2330 and the first side surface S1 and the second angle θ2 formed between one surface of the reflective mask 2330 and the second side surface S2 are obtuse angles exceeding 90 degrees, but the inclined surface may have a curvature. The inclination becomes gentler as it goes up, but this is not limited to this.

[0290] Although the present invention has been described above with reference to the accompanying drawings, those skilled in the art will understand that the present invention can be embodied in other specific forms without changing the technical spirit or essential features of the present invention. Therefore, it should be understood that the above-described embodiment is illustrative in all respects and is not limiting. [Explanation of symbols]

[0291] 10 Display device 20 Display board 200 Support part 300 Pressure unit 351 Translucent Plate 2320 Plate transfer member 330 Reflective material 2360 Light-absorbing materials 315 Mounting member 500 Laser irradiation unit

Claims

1. a support portion on which the display board is mounted; a pressing unit including a mask defining an opening corresponding to a transmission region of the laser beam and a pressing member for pressing the mask; a laser irradiation unit disposed in front of the support unit and configured to irradiate the display substrate with laser light through the mask; The mask includes a base layer that transmits laser light, and a light-shielding pattern layer that is disposed on the base layer and includes the openings.

2. 2. The display panel manufacturing apparatus of claim 1, wherein the pressure member is disposed on the mask and includes a light-transmitting member and an elastic member overlapping each other in a thickness direction, forming an airtight space between the light-transmitting member and the elastic member, and further including a gas pressure regulator that adjusts the gas pressure in the airtight space.

3. 3. The display panel manufacturing apparatus according to claim 2, wherein the elastic member is disposed on the mask, and when the gas pressure in the sealed space increases, the elastic member expands to pressurize the mask.

4. 3. The display panel manufacturing apparatus of claim 2, wherein the pressure member further comprises a gas conduit connected between the gas pressure regulator and the sealed space.

5. the mask is a photomask, The photomask is a transparent or translucent flat plate-like base layer; and The display panel manufacturing apparatus according to claim 1 , further comprising a light-shielding pattern layer disposed on the base layer and having a light-shielding pattern with light-shielding properties.

6. The display panel manufacturing apparatus according to claim 5 , wherein the photomask is disposed so as to face the display substrate.

7. The display panel manufacturing apparatus according to claim 5 , wherein the photomask is disposed so as to face the laser irradiation unit.

8. 6. The display panel manufacturing apparatus according to claim 5, wherein the light-shielding pattern includes an opening formed in an area corresponding to a display area in which light-emitting elements of the display substrate are arranged.

9. 6. The display panel manufacturing apparatus according to claim 5, wherein the light-shielding pattern includes openings formed in areas corresponding to light-emitting elements arranged on the display substrate.

10. 3. The display panel manufacturing apparatus according to claim 2, further comprising a mounting member attached to an outer surface of the mask to support the mask.

11. the mask is a metal mask assembly; The metal mask assembly includes: a transparent or translucent flat plate-shaped light-transmitting layer; and The display panel manufacturing apparatus according to claim 1 , further comprising a metal mask disposed on the base layer, the metal mask having a reflective property and an opening.

12. 12. The display panel manufacturing apparatus according to claim 11, wherein the opening is formed in a region corresponding to a display region in which light emitting elements are arranged on the display substrate.

13. The display panel manufacturing apparatus according to claim 11 , wherein the openings are formed in areas corresponding to light emitting elements arranged on the display substrate.

14. a support portion on which the display board is mounted; a pressure unit including a light-transmitting plate disposed on the front surface of the support unit, a pressure member that presses the light-transmitting plate, a reflection mask that defines an opening corresponding to a transmission region of a laser beam and is disposed on the light-transmitting plate, and a light-absorbing member that absorbs the laser light reflected by the reflection mask; and a laser irradiation unit disposed on a front surface of the light-transmitting plate and configured to irradiate the display substrate with laser light through the light-transmitting plate; The display panel manufacturing apparatus, wherein the reflective mask is disposed so as to be inclined relative to an upper surface of the light-transmitting plate, and the light-absorbing member is disposed parallel to the reflective mask.

15. The display panel manufacturing apparatus of claim 14 , wherein the pressure unit further comprises an optical member disposed between the reflective mask and the light absorbing member, the optical member focusing light to advance to the light absorbing member.

16. 15. The display panel manufacturing apparatus according to claim 14, wherein the opening is formed in a region corresponding to a display region in which light emitting elements are arranged on the display substrate.

17. The display panel manufacturing apparatus according to claim 14 , wherein the openings are formed in areas corresponding to light emitting elements arranged on the display substrate.

18. 15. The display panel manufacturing apparatus of claim 14, wherein the opening includes a first side and a second side opposite to the first side, and is a trapezoid or parallelogram in which a first angle formed between the first side and one surface of the reflective mask and an angle formed between the one surface of the reflective mask and the second side are different from each other.

19. 15. The display panel manufacturing apparatus of claim 14, wherein the opening includes a first side and a second side opposite to the first side, and is an isosceles trapezoid in which a first angle formed between the first side and one surface of the reflective mask and an angle formed between the one surface of the reflective mask and the second side are the same, or the first side and the second side have curvature.

20. a support portion on which the display board is mounted; a pressure unit including a light-transmitting plate disposed on the front surface of the support unit, a pressure member that presses the light-transmitting plate, a reflection mask that defines an opening corresponding to a transmission region of a laser beam and is disposed on the light-transmitting plate, and a light-absorbing member that absorbs the laser light reflected by the reflection mask; and a laser irradiation unit disposed on a front surface of the light-transmitting plate and configured to irradiate the display substrate with laser light through the light-transmitting plate; The display panel manufacturing apparatus, wherein the laser light is diverging light.

Images