Substrate processing method and substrate processing device

Abstract

To provide a substrate processing method capable of preventing decrease in kinetic energy of a processing liquid before collision with a substrate.SOLUTION: A substrate processing method includes a first single-side discharge step and a second single-side discharge step. In the first single-side discharge step, while discharge of a processing liquid from a second outer nozzle 31B, which is disposed above an inner tank 21 and discharges the processing liquid toward a substrate W held by a lifter 13, is stopped, a first outer nozzle 31A, which is disposed above the inner tank 21 so as to be located on an opposite side to the second outer nozzle 31B with respect to a vertical line passing through a center C1 of the substrate W when viewed in a direction perpendicular to the substrate W held by the lifter 13, discharges the processing liquid toward the substrate W held by the lifter 13. In the second single-side discharge step, while discharge of the processing liquid from the first outer nozzle 31A is stopped, the second outer nozzle 31B discharges the processing liquid toward the substrate W held by the lifter 13.SELECTED DRAWING: Figure 6C-E

Description

[Technical Field]

[0001] The present invention relates to a substrate processing method and a substrate processing apparatus for processing substrates, including, for example, semiconductor wafers, substrates for FPDs (Flat Panel Displays) such as liquid crystal displays and organic EL (electroluminescence) displays, substrates for optical disks, substrates for magnetic disks, substrates for magneto-optical disks, substrates for photomasks, ceramic substrates, and substrates for solar cells. [Background technology]

[0002] Patent Document 1 discloses that two shower nozzles are disposed above a processing tank, and processing liquid is discharged from the two shower nozzles in the form of showers toward substrates in the processing tank. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Laid-Open No. 2010-225832 Summary of the Invention [Problem to be solved by the invention]

[0004] In the substrate processing apparatus described in Patent Document 1, both shower nozzles eject processing liquid toward the substrate from opposite sides of the lifter, so the processing liquid ejected from one shower nozzle and the processing liquid ejected from the other shower nozzle collide before reaching the substrate, reducing the kinetic energy of the processing liquid before it collides with the substrate.

[0005] At least one embodiment of the present invention provides a substrate processing method and a substrate processing apparatus that can prevent a reduction in the kinetic energy of a processing liquid before it collides with a substrate. [Means for solving the problem]

[0006] One embodiment of the present invention provides a substrate processing method including: a substrate holding process in which a lifter, which is vertically movable between an upper position in which the substrate held by the lifter is positioned above an opening of an inner tank and a lower position in which the substrate held by the lifter is positioned in a storage space of the inner tank, holds the substrate in an upright position; a first one-sided discharge process in which, while causing a second outer nozzle, which is positioned above the inner tank and discharges processing liquid toward the substrate held by the lifter, to stop discharging processing liquid, a first outer nozzle, which is positioned above the inner tank so as to be located on the opposite side of the second outer nozzle with respect to a vertical line passing through the center of the substrate when viewed in a direction perpendicular to the substrate held by the lifter, to start discharging processing liquid; and a second one-sided discharge process in which, while causing the first outer nozzle to stop discharging processing liquid, the second outer nozzle starts discharging processing liquid.

[0007] In the above embodiment, at least one of the following features may be added to the substrate processing method.

[0008] The substrate processing method further includes a reciprocating step of vertically reciprocating the lifter within a range in which the processing liquid ejected from the first outer nozzle or the second outer nozzle continues to collide with the substrate while the first one-sided discharge step or the second one-sided discharge step is being performed, or while either the first one-sided discharge step or the second one-sided discharge step is being performed.

[0009] The substrate processing method further includes a liquid draining step of draining the processing liquid from the inner tank regardless of whether the first one-sided discharging step or the second one-sided discharging step is being performed.

[0010] The substrate processing method further includes, after the first one-sided discharge process and the second one-sided discharge process, a two-sided discharge process in which, with the lifter positioned at the lower position, discharge of the processing liquid from the inner tank is stopped while both the first outer nozzle and the second outer nozzle are caused to discharge the processing liquid.

[0011] The substrate processing method further includes an upflow forming process of causing a processing liquid nozzle, at least a portion of which is positioned in contact with the processing liquid in the inner tank and which ejects the processing liquid toward the storage space of the inner tank, to eject the processing liquid while the two-sided ejection process is being performed.

[0012] Another embodiment of the present invention includes an inner tank that has an opening through which a substrate passes vertically and a storage space that accommodates the substrate that has passed downward through the opening, and that stores a processing liquid to be supplied to the substrate in the storage space; a lifter that holds the substrate in an upright position; an elevation actuator that vertically moves the lifter between an upper position where the substrate held by the lifter is disposed above the opening of the inner tank and a lower position where the substrate held by the lifter is disposed in the storage space of the inner tank; a first outer nozzle and a second outer nozzle disposed above the inner tank so as to be located on opposite sides of a vertical line passing through the center of the inner tank, and configured to discharge a processing liquid toward the substrate held by the lifter, wherein the first outer nozzle and the second outer nozzle perform a first one-sided discharge process in which the first outer nozzle discharges the processing liquid when the second outer nozzle stops discharging the processing liquid, and a second one-sided discharge process in which the second outer nozzle discharges the processing liquid when the first outer nozzle stops discharging the processing liquid.

[0013] In the above embodiment, at least one of the following features may be added to the substrate processing apparatus.

[0014] The lifting actuator performs a reciprocating process of vertically reciprocating the lifter within a range in which the processing liquid ejected from the first outer nozzle or the second outer nozzle continues to collide with the substrate, whether the first one-side ejection process or the second one-side ejection process is being performed, or whether the first one-side ejection process or the second one-side ejection process is being performed.

[0015] The substrate processing apparatus further includes a drain valve that switches between an open state in which the processing liquid is discharged from the inner tank and a closed state in which the discharge of the processing liquid from the inner tank is stopped, and the drain valve performs a drain process to discharge the processing liquid from the inner tank regardless of whether the first one-sided discharge process or the second one-sided discharge process is being performed.

[0016] After the first one-sided discharge process and the second one-sided discharge process, the first outer nozzle and the second outer nozzle perform a two-sided discharge process in which both the first outer nozzle and the second outer nozzle discharge processing liquid while the drain valve is in the closed state and the lifter is positioned in the lower position.

[0017] The substrate processing apparatus further includes a processing liquid nozzle, at least a portion of which is positioned in contact with the processing liquid in the inner tank and which ejects the processing liquid toward the storage space of the inner tank, and the processing liquid nozzle performs an upflow forming process in which the processing liquid nozzle ejects the processing liquid while the two-side ejection process is being performed.

[0018] The substrate processing apparatus may include a plurality of valves, each of which switches between an open state that allows a processing liquid to pass downstream and a closed state that stops the processing liquid, and a control device that controls the states of the plurality of valves to switch each of the plurality of nozzles between a discharge execution state in which the processing liquid is discharged and a discharge stop state in which the processing liquid is stopped. In this case, the control device controls the states of the plurality of valves to cause the first outer nozzle, the second outer nozzle, etc. to perform a plurality of processes, such as a first one-sided discharge process and a second one-sided discharge process. The plurality of nozzles may include not only the first outer nozzle and the second outer nozzle, but also nozzles other than the first outer nozzle and the second outer nozzle, such as a processing liquid nozzle. [Brief explanation of the drawings]

[0019] [Figure 1] 1 is a schematic plan view showing a layout of a batch-type substrate processing apparatus according to an embodiment of the present invention. [Figure 2] 2 is a schematic diagram showing a cross section of the liquid processing tank taken along a vertical plane perpendicular to the front-rear direction. FIG. [Figure 3] 2 is a schematic view showing a cross section of the liquid treatment tank taken along a vertical plane perpendicular to the left-right direction. FIG. [Figure 4] FIG. 2 is a block diagram showing an electrical configuration of the substrate processing apparatus. [Figure 5] 10 is a flowchart illustrating an example of substrate processing performed by the substrate processing apparatus. [Figure 6A-B] FIG. 10 is a schematic diagram for explaining the same example. [Figure 6C-E] FIG. 10 is a schematic diagram for explaining the same example. [Figure 6F-G] FIG. 10 is a schematic diagram for explaining the same example. DETAILED DESCRIPTION OF THE INVENTION

[0020] Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.

[0021] FIG. 1 is a schematic plan view showing the layout of a batch-type substrate processing apparatus 1 according to one embodiment of the present invention.

[0022] The substrate processing apparatus 1 is a batch-type apparatus that collectively processes a plurality of substrates W. The substrate processing apparatus 1 includes a load port LP that holds carriers CA that accommodate disk-shaped substrates W such as semiconductor wafers, processing units 2 that treat the substrates W transferred from the load port LP with processing liquids such as chemicals and rinse liquids, a transfer system 8 that transfers the substrates W between the load port LP and the processing units 2, and a control device 3 that controls the substrate processing apparatus 1.

[0023] The processing unit 2 includes a plurality of liquid processing tanks 2L that store processing liquid in which a plurality of substrates W are immersed, and a drying processing tank 2d that dries the plurality of substrates W by a drying method such as reduced-pressure drying. Reduced-pressure drying is a drying method that evaporates liquid adhering to the substrates W by reducing the air pressure. The plurality of pairs of liquid processing tanks 2L are aligned linearly in the depth direction of the substrate processing apparatus 1 in a plan view (the left-right direction on the paper in FIG. 1). The drying processing tank 2d is disposed between the transfer system 8 and the plurality of liquid processing tanks 2L in the depth direction of the substrate processing apparatus 1 in a plan view.

[0024] The multiple liquid treatment tanks 2L may include a chemical treatment tank that performs chemical treatment on the multiple substrates W and a rinse treatment tank that performs a rinse treatment on the multiple substrates W that have been chemically treated in the chemical treatment tank, or may include a multi-treatment tank that performs both chemical treatment and rinse treatment. The multiple liquid treatment tanks 2L may include a chemical treatment tank, a rinse treatment tank, and a multi-treatment tank. Figure 1 shows an example in which all of the liquid treatment tanks 2L are multi-treatment tanks.

[0025] The transport system 8 includes a carrier transport device 9 that transports carriers CA between the load port LP and the processing unit 2 and accommodates a plurality of carriers CA, and a posture conversion robot 10 that loads and unloads a plurality of substrates W onto and from the carriers CA held by the carrier transport device 9 and changes the posture of the substrates W between a horizontal posture and a vertical posture. The posture conversion robot 10 performs a batch assembly operation in which a plurality of substrates W taken out from a plurality of carriers CA form one batch, and a batch release operation in which the plurality of substrates W included in one batch are placed into a plurality of carriers CA.

[0026] The transport system 8 further includes a main transport robot 11 that transports a plurality of substrates W between the posture conversion robot 10 and the processing unit 2, and a plurality of sub-transport robots 12 that transport a plurality of substrates W between the main transport robot 11 and the processing unit 2. Fig. 1 shows an example in which two sub-transport robots 12 and two pairs of liquid treatment tanks 2L are provided. The sub-transport robot 12 loads and unloads a plurality of substrates W into and from each of the two pairs of liquid treatment tanks 2L, and transports the plurality of substrates W between the two pairs of liquid treatment tanks 2L.

[0027] The main transport robot 11 receives a batch of substrates W consisting of a plurality of substrates W (for example, 50 substrates W) from the posture conversion robot 10, and transfers the received batch of substrates W to one of the plurality of auxiliary transport robots 12. The auxiliary transport robot 12 immerses the batch of substrates W received from the main transport robot 11 in a processing liquid in at least one liquid processing tank 2L. Thereafter, the main transport robot 11 receives the batch of substrates W from the auxiliary transport robot 12, and transfers the received batch of substrates W into the drying processing tank 2d.

[0028] Next, the liquid treatment tank 2L will be described.

[0029] Fig. 2 is a schematic diagram showing a cross section of liquid processing tank 2L taken along a vertical plane perpendicular to the front-rear direction. Fig. 3 is a schematic diagram showing a cross section of liquid processing tank 2L taken along a vertical plane perpendicular to the left-right direction. In Fig. 2, the direction perpendicular to the paper surface corresponds to the direction perpendicular to the substrate W held by lifter 13. Fig. 3 shows a cross section of liquid processing tank 2L taken along a vertical plane perpendicular to the left-right direction and passing through reference line L1. In Fig. 3, outer tank 22 is omitted.

[0030] As shown in FIG. 2, liquid processing tank 2L includes inner tank 21 that stores a processing liquid. Inner tank 21 includes a cylindrical peripheral wall 21p that extends vertically and a bottom wall 21b that closes the bottom of peripheral wall 21p. Peripheral wall 21p forms opening 21o through which substrates W to be processed pass vertically, and storage space 21s that stores the processing liquid to be supplied to substrates W that have passed downward through opening 21o. Storage space 21s extends downward from opening 21o. Multiple substrates W are placed in inner tank 21 and immersed in the processing liquid in inner tank 21. Liquid processing tank 2L may or may not include outer tank 22 that stores processing liquid that overflows from inner tank 21. FIG. 2 shows an example of the former.

[0031] The sub-transport robot 12 includes a lifter 13 that holds one or more substrates W in an upright position, and a lifting actuator 16 that moves the lifter 13 vertically. The lifting actuator 16 stops the lifter 13 at any position within a range from an upper position (the position indicated by the solid line in FIG. 2) to a lower position (the position indicated by the two-dot chain line in FIG. 2). The upper position is a position where the one or more substrates W held by the lifter 13 are entirely located above the opening 21o of the inner bath 21. The lower position is a position where the one or more substrates W held by the lifter 13 are entirely located inside the inner bath 21, i.e., in the storage space 21s.

[0032] An actuator is a device that converts driving energy, which may be electrical, fluid, magnetic, thermal, or chemical energy, into mechanical work. Actuators include electric motors (rotary motors), linear motors, air cylinders, and other devices. When the motion of the actuator differs from the motion of the object, a motion converter may be provided to convert the motion of the actuator into linear motion or rotation. When the actuator is an electric motor and moves the object linearly, the rotation of the electric motor may be converted into linear motion by a motion converter such as a ball screw and ball nut.

[0033] The lifter 13 is an example of a substrate holder that holds substrates W. The lifter 13 holds multiple substrates W of the same shape and size in an upright position, facing each other parallel or nearly parallel with a gap in the horizontal front-to-rear direction. The upright position is a position in which the substrates W are aligned along a vertical plane. If the multiple substrates W are parallel or nearly parallel, the lifter 13 may hold the multiple substrates W in a vertical position, or may hold the multiple substrates W in a position tilted relative to the vertical plane. When the lifter 13 holds the multiple substrates W, the centers C1 of the multiple substrates W are arranged along a straight line that extends horizontally in the front-to-rear direction.

[0034] The lifter 13 includes a plurality of support bars 14 arranged below the plurality of substrates W to be held, and a base plate 15 fixed to the plurality of support bars 14. FIG. 2 shows an example in which three support bars 14 are provided. The plurality of support bars 14 extend horizontally from the base plate 15. Each support bar 14 has a plurality of grooves that receive the plurality of substrates W one by one. The plurality of substrates W are placed on the plurality of support bars 14 so that the outer periphery of each substrate W fits into the groove of each support bar 14. This prevents the substrates W from tilting relative to the plurality of support bars 14, and keeps them in an upright position.

[0035] The substrate processing apparatus 1 includes two processing liquid nozzles 23 that discharge processing liquid into the inner bath 21, two individual pipes 24i that guide the processing liquid toward the two processing liquid nozzles 23, and a common pipe 24c that guides the processing liquid toward the two individual pipes 24i. The processing liquid flowing in the common pipe 24c is supplied to the two processing liquid nozzles 23 through the two individual pipes 24i. Each processing liquid nozzle 23 discharges the processing liquid from a discharge port 23p arranged in the inner bath 21, thereby supplying the processing liquid into the inner bath 21 and forming an upflow of the processing liquid in the processing liquid in the inner bath 21.

[0036] The substrate processing apparatus 1 includes a chemical liquid pipe 25p that guides a chemical liquid toward the two processing liquid nozzles 23, and a chemical liquid valve 25v that switches between an open state that allows the chemical liquid to pass through the chemical liquid pipe 25p flowing downstream and a closed state that stops the flow of the chemical liquid. The substrate processing apparatus 1 further includes a rinse liquid pipe 26p that guides a rinse liquid toward the two processing liquid nozzles 23, and a rinse liquid valve 26v that switches between an open state that allows the rinse liquid to pass through the rinse liquid pipe 26p flowing downstream and a closed state that stops the flow of the rinse liquid.

[0037] The chemical liquid pipe 25p and the rinse liquid pipe 26p are connected to two processing liquid nozzles 23 via a common pipe 24c and two individual pipes 24i. When the chemical liquid valve 25v is opened, that is, when the chemical liquid valve 25v is switched from a closed state to an open state, the two processing liquid nozzles 23 discharge the chemical liquid. Similarly, when the rinse liquid valve 26v is opened, the two processing liquid nozzles 23 discharge the rinse liquid.

[0038] The chemical liquid may be a liquid containing at least one of sulfuric acid, nitric acid, hydrochloric acid, hydrofluoric acid, phosphoric acid, acetic acid, ammonia water, hydrogen peroxide water, organic acid (e.g., citric acid, oxalic acid, etc.), organic alkali (e.g., TMAH: tetramethylammonium hydroxide, etc.), surfactant, and corrosion inhibitor, or may be other liquids. For example, the chemical liquid may be any of SC1 (a mixture of ammonia water, hydrogen peroxide water, and water), SC2 (a mixture of hydrochloric acid, hydrogen peroxide water, and water), and SPM (a mixture of sulfuric acid and hydrogen peroxide water).

[0039] The rinse liquid may be any of pure water (deionized water: DIW), carbonated water, electrolytic ionized water, hydrogen water, ozone water, and diluted hydrochloric acid water (for example, about 10 to 100 ppm), or may be any other liquid. Figure 2 shows an example in which the rinse liquid is pure water.

[0040] Although not shown, the chemical liquid valve 25v includes a valve body with an annular valve seat through which the chemical liquid passes, a valve element movable relative to the valve seat, and an actuator that moves the valve element between a closed position in which the valve element contacts the valve seat and an open position in which the valve element is separated from the valve seat. The same applies to other valves. The actuator may be a pneumatic actuator, an electric actuator, or another type of actuator. The control device 3 opens and closes the chemical liquid valve 25v by controlling the actuator. The content of this paragraph also applies to valves other than the chemical liquid valve 25v.

[0041] The substrate processing apparatus 1 includes a discharge pipe 27p that guides the processing liquid discharged from the inner tank 21, and a drain valve 27v that switches between an open state in which the processing liquid is discharged from the inner tank 21 to the discharge pipe 27p and a closed state in which the discharge of the processing liquid from the inner tank 21 to the discharge pipe 27p is stopped. The discharge pipe 27p is connected to a discharge port that opens at the bottom of the inner surface of the inner tank 21. When the liquid processing tank 2L includes an outer tank 22, the substrate processing apparatus 1 further includes a discharge pipe 28p that guides the processing liquid discharged from the outer tank 22, and a drain valve 28v that switches between an open state in which the processing liquid is discharged from the outer tank 22 to the discharge pipe 28p and a closed state in which the discharge of the processing liquid from the outer tank 22 to the discharge pipe 28p is stopped.

[0042] Next, the outer nozzle 31 that discharges the processing liquid above the inner tank 21 will be described.

[0043] As shown in FIG. 2, the substrate processing apparatus 1 includes two outer nozzles 31 that eject a processing liquid toward a substrate W held by a lifter 13. The two outer nozzles 31 are disposed above the inner bath 21, i.e., outside the inner bath 21. When viewed in a direction perpendicular to the substrate W held by the lifter 13, a vertical line passing through the center C1 of the substrate W is defined as a reference line L1. The two outer nozzles 31 are disposed on opposite sides of the reference line L1. When the lifter 13 holds multiple substrates W, if there is no processing liquid between the outer nozzles 31 and the substrate W, the processing liquid will hit all of the substrates W held by the lifter 13 regardless of which outer nozzle 31 ejects the processing liquid.

[0044] The two outer nozzles 31 are symmetrical with respect to the reference line L1. Therefore, the two outer nozzles 31 are disposed at the same height, and the horizontal distance from the reference line L1 to the outer nozzles 31 is the same for the two outer nozzles 31. The sizes of the two outer nozzles 31 are the same for the two outer nozzles 31. When one outer nozzle 31 is inverted with respect to the reference line L1, the shapes of the two outer nozzles 31 match. The two outer nozzles 31 eject the treatment liquid downward. The directions in which the two outer nozzles 31 eject the treatment liquid are opposite to each other with respect to the reference line L1 (see FIG. 6F).

[0045] At least one of the height of the outer nozzles 31 and the horizontal distance from the reference line L1 to the outer nozzles 31 may be different between the two outer nozzles 31. The sizes of the two outer nozzles 31 may be different from each other. The shape of one outer nozzle 31 may be different from the shape of the other outer nozzle 31 obtained by inverting it with respect to the reference line L1. The directions in which the two outer nozzles 31 eject the processing liquid do not have to be opposite to each other with respect to the reference line L1.

[0046] The outer nozzle 31 includes a plurality of outlets for discharging the processing liquid toward the substrates W held by the lifter 13. In FIG. 3, a plurality of dots drawn on the nozzle head 31h represent a plurality of outlets. All of the outlets are located above the inner bath 21. As described above, the lifter 13 holds the substrates W so that they are aligned in an upright position in the front-to-rear direction (the left-to-right direction on the paper in FIG. 3). At least one outlet is located at each of a plurality of outlet positions spaced apart in the front-to-rear direction. The outer nozzle 31 may discharge the processing liquid in a shower or mist form at each of the outlet positions, or in other forms. FIGS. 6D and 6E, which will be described later, show an example in which the outer nozzle 31 is a shower nozzle that discharges the processing liquid in a shower-like manner from one or more outlets at each outlet position so that the shower-like processing liquid is diffused only within a space spreading in a conical shape.

[0047] The outer nozzle 31 includes a linear nozzle tube 31t that guides the processing liquid to be discharged from a plurality of discharge ports. The nozzle tube 31t extends in the front-to-rear direction. The plurality of discharge ports may open on the outer peripheral surface of the nozzle tube 31t, or may open on the outer surface of a nozzle head 31h attached to the nozzle tube 31t. FIG. 3 shows an example of the latter. In this example, a plurality of nozzle heads 31h are attached to the nozzle tube 31t, each of which is arranged at a plurality of discharge positions. The processing liquid in the nozzle tube 31t is supplied to each nozzle head 31h and discharged from a plurality of discharge ports of each nozzle head 31h.

[0048] 2, the substrate processing apparatus 1 includes two rinse liquid pipes 32p that guide the rinse liquid toward the two outer nozzles 31, and two rinse liquid valves 32v that switch between an open state that allows the rinse liquid to flow downstream through the rinse liquid pipes 32p and a closed state that stops the rinse liquid. The rinse liquid pipes 32p are an example of processing liquid pipes that guide the processing liquid toward the outer nozzles 31. The rinse liquid valves 32v are an example of processing liquid valves that switch between an open state that allows the processing liquid to flow downstream through the processing liquid pipes and a closed state that stops the processing liquid.

[0049] When both rinse liquid valves 32v are open, both outer nozzles 31 eject the rinse liquid. When both rinse liquid valves 32v are closed, both outer nozzles 31 stop ejecting the rinse liquid. When one rinse liquid valve 32v is open, one outer nozzle 31 ejects the rinse liquid. When the other rinse liquid valve 32v is open, the other outer nozzle 31 ejects the rinse liquid. Therefore, the control device 3 can change the number of outer nozzles 31 ejecting the rinse liquid, which is an example of a processing liquid, by switching the states of the two rinse liquid valves 32v.

[0050] Next, the electrical configuration of the substrate processing apparatus 1 will be described.

[0051] 4 is a block diagram showing the electrical configuration of the substrate processing apparatus 1. The substrate processing apparatus 1 includes a control device 3 that controls the electrical and electronic devices provided in the substrate processing apparatus 1. The control device 3 includes at least one computer that can communicate with each other. The computer includes a computer main body 3a and a peripheral device 3d connected to the computer main body 3a.

[0052] The computer main body 3a includes a CPU 3b (central processing unit) that executes various commands, and a memory 3c that stores information to be transmitted and received between the CPU 3b. The peripheral device 3d includes a storage 3e that stores information to be transmitted and received between the memory 3c, such as a program P, a reader 3f that reads information from removable media RM, and a communication device 3g that communicates with other devices such as a host computer HC. The memory 3c and the storage 3e are both examples of storage devices that store information to be transmitted and received between the CPU 3b.

[0053] The control device 3 is connected to an input device 3h and a display device 3i. The input device 3h is operated when an operator such as a user or a maintenance technician inputs information into the substrate processing apparatus 1. The information is displayed on the screen of the display device 3i. The input device 3h may be any one of a keyboard, a pointing device, and a touch panel, or may be a device other than these. The substrate processing apparatus 1 may be provided with a touch panel display that serves as both the input device 3h and the display device 3i.

[0054] The CPU 3b executes a program P stored in the storage 3e. The program P in the storage 3e may be one that has been pre-installed in the control device 3, or may be one that has been sent from a removable medium RM to the storage 3e via a reader 3f, or may be one that has been sent from an external device such as a host computer HC via a communication device 3g to the storage 3e.

[0055] The memory 3c is a volatile memory that retains its memory only when power is supplied. The storage 3e and the removable medium RM are non-volatile memories that retain their memory even when power is not supplied. The storage 3e is, for example, a magnetic storage device such as a hard disk drive. The removable medium RM is, for example, an optical disk such as a compact disk or a semiconductor memory such as a memory card. The removable medium RM is an example of a computer-readable recording medium on which the program P is recorded. The removable medium RM is a non-transitory tangible recording medium.

[0056] The storage 3e stores a plurality of recipes RC. The recipes RC are information that specifies the processing content, processing conditions, and processing procedures for the substrates W. The plurality of recipes RC differ from one another in at least one of the processing content, processing conditions, and processing procedures for the substrates W. The control device 3 controls the substrate processing apparatus 1 so that the substrates W are processed in accordance with the recipes RC specified by the host computer HC. The control device 3 is programmed to execute each of the processes described below. The programs P that execute each of the processes described below may be stored in either the storage 3e or the removable medium RM.

[0057] Next, an example of processing of the substrate W performed by the substrate processing apparatus 1 will be described.

[0058] Figure 5 is a flowchart for explaining this example. Figures 6A, 6B, 6C, 6D, 6E, 6F, and 6G are schematic diagrams for explaining this example. Hereinafter, one outer nozzle 31 may be referred to as the first outer nozzle 31A, and the other outer nozzle 31 may be referred to as the second outer nozzle 31B. The rinse liquid valve 32v corresponding to the first outer nozzle 31A may be referred to as the first rinse liquid valve 32A, and the rinse liquid valve 32v corresponding to the second outer nozzle 31B may be referred to as the second rinse liquid valve 32B.

[0059] When substrates W are processed in the substrate processing apparatus 1, as shown in Figures 6A and 6B, at least one substrate W is held by the lifter 13, and with the chemical liquid pooled in the inner bath 21, the lifting actuator 16 moves the lifter 13 from the upper position to the lower position (step S1 in Figure 5). When the lifter 13 is placed in the lower position, all of the substrates W held by the lifter 13 move into the inner bath 21 and are placed below the surface of the chemical liquid in the inner bath 21. This performs a chemical liquid supplying step (step S2 in Figure 5) in which the chemical liquid is supplied to the entire front and back surfaces of the substrates W.

[0060] After a predetermined time has elapsed since the lifter 13 was placed in the lower position, a drainage step is started to drain the processing liquid from the inner bath 21 while the lifter 13 is in the lower position (step S3 in FIG. 5). Specifically, the drainage valve 27v is opened to start draining the processing liquid from the inner bath 21. This reduces the amount of chemical liquid in the inner bath 21, and the surface (upper surface) of the chemical liquid in the inner bath 21 begins to descend. When a predetermined time has elapsed since the drainage of the chemical liquid began, the surface of the chemical liquid in the inner bath 21 descends to a position between the upper end and the lower end of the substrate W, and the substrate W becomes partially exposed from the chemical liquid in the inner bath 21, as shown in FIG. 6C.

[0061] After the substrates W are partially exposed from the chemical solution in the inner bath 21, as shown in FIG. 6D, a first one-side discharge step (step S4 in FIG. 5) is performed in which the first outer nozzle 31A is caused to discharge pure water while the second outer nozzle 31B stops discharging pure water. Specifically, with the drain valve 27v open and the second rinse liquid valve 32B closed, the first rinse liquid valve 32A is opened to cause the first outer nozzle 31A to start discharging pure water. Some of the pure water discharged from the first outer nozzle 31A collides with all of the substrates W held by the lifter 13 in the lower position and then accumulates in the inner bath 21. The remaining pure water accumulates in the inner bath 21 without colliding with the substrates W. The flow rate of the pure water supplied from the first outer nozzle 31A to the inner bath 21 is smaller than the flow rate of the processing liquid discharged from the inner bath 21. Therefore, the processing liquid in the inner bath 21 continues to decrease while the first outer nozzle 31A is discharging pure water.

[0062] After a predetermined time has elapsed since the first outer nozzle 31A started discharging pure water, as shown in FIG. 6E, a second one-side discharging process (step S5 in FIG. 5) is performed in which the first outer nozzle 31A stops discharging pure water while the second outer nozzle 31B starts discharging pure water. Specifically, the first rinse liquid valve 32A is closed to stop discharging pure water from the first outer nozzle 31A. Simultaneously or thereafter, with the drain valve 27v open, the second rinse liquid valve 32B is opened to start discharging pure water from the second outer nozzle 31B. Some of the pure water discharged from the second outer nozzle 31B collides with all the substrates W held by the lifter 13 in the lower position and then accumulates in the inner bath 21. The remaining pure water accumulates in the inner bath 21 without colliding with the substrates W. The flow rate of pure water supplied from the second outer nozzle 31B to the inner bath 21 is smaller than the flow rate of pure water discharged from the inner bath 21.

[0063] When the second outer nozzle 31B is discharging pure water, the lifting actuator 16 may perform a reciprocating step in which the lifter 13 is moved vertically back and forth within a range in which the pure water discharged from the second outer nozzle 31B continues to collide with the substrate W, or may perform a stationary step in which the lifter 13 is kept stationary at the lower position. This is also true when the first outer nozzle 31A is discharging pure water. The thick arrows in FIGS. 6D and 6E indicate that the lifter 13 is moved vertically back and forth. The reciprocating step may be performed when one of the first outer nozzle 31A and the second outer nozzle 31B is discharging pure water, and the stationary step may be performed when the other of the first outer nozzle 31A and the second outer nozzle 31B is discharging pure water.

[0064] The flow rate of the pure water discharged from the second outer nozzle 31B may be equal to, or greater than, or less than, the flow rate of the pure water discharged from the first outer nozzle 31A. The time during which the first outer nozzle 31A is discharging pure water and the second outer nozzle 31B has stopped discharging pure water may be equal to, or greater than, or less than, the time during which the second outer nozzle 31B is discharging pure water and the first outer nozzle 31A has stopped discharging pure water.

[0065] In this way, when one of the first outer nozzle 31A and the second outer nozzle 31B is ejecting deionized water, the other of the first outer nozzle 31A and the second outer nozzle 31B stops ejecting deionized water. This prevents the deionized water ejected from the first outer nozzle 31A and the deionized water ejected from the second outer nozzle 31B from weakening each other's momentum. Furthermore, most of the deionized water ejected from the second outer nozzle 31B and impinging on the substrate W impinges on the substrate W at a position different from the position at which the deionized water ejected from the first outer nozzle 31A impinged on the substrate W. This allows the deionized water to directly impinge on a wider area within the front and back surfaces of the substrate W.

[0066] When a predetermined time has elapsed since the second outer nozzle 31B started to discharge pure water, the drain valve 27v is closed (step S6 in FIG. 5) while the second rinse liquid valve 32B is open, and the first rinse liquid valve 32A is opened (step S7 in FIG. 5). Furthermore, the rinse liquid valve 26v is opened (step S8 in FIG. 5), and the two processing liquid nozzles 23 start to discharge pure water.

[0067] Closing the drain valve 27v ends the draining process. Opening the rinse liquid valve 26v starts the upflow forming process of storing the processing liquid in the inner tank 21. The first rinse liquid valve 32A may be opened simultaneously with closing the drain valve 27v, or may be opened before or after closing the drain valve 27v. The same applies to the rinse liquid valve 26v. The rinse liquid valve 26v may be opened simultaneously with opening the first rinse liquid valve 32A, or may be opened before or after opening the first rinse liquid valve 32A.

[0068] Since the second rinse liquid valve 32B is open, when the first rinse liquid valve 32A is opened, both the first outer nozzle 31A and the second outer nozzle 31B eject pure water, as shown in FIG. 6F. This starts the bilateral ejection process. When the first outer nozzle 31A and the second outer nozzle 31B eject pure water while the drain valve 27v is closed, the pure water accumulates in the inner tank 21. In this state, the pure water ejected from the two processing liquid nozzles 23 also accumulates in the inner tank 21. Therefore, the amount of pure water in the inner tank 21 increases at a faster rate than when only the first outer nozzle 31A and the second outer nozzle 31B eject pure water.

[0069] 6G, the surface of the pure water in the inner bath 21 moves upward as the pure water in the inner bath 21 increases. When the surface of the pure water in the inner bath 21 reaches a position higher than the upper end of the substrate W held by the lifter 13, which is in the lower position, the first rinse liquid valve 32A, the second rinse liquid valve 32B, and the rinse liquid valve 26v are closed. These valves may be closed simultaneously or separately. Two of the first rinse liquid valve 32A, the second rinse liquid valve 32B, and the rinse liquid valve 26v may be closed simultaneously, and the remaining one may be closed at a different time.

[0070] After the first outer nozzle 31A, the second outer nozzle 31B, and the processing liquid nozzle 23 stop discharging the pure water, the first outer nozzle 31A and the second outer nozzle 31B are alternately discharged again while discharging the pure water from the inner bath 21, and the pure water is then stored in the inner bath 21 until the surface of the pure water reaches a position above the upper end of the substrate W. That is, a repeating step (step S9 in FIG. 5) is performed, which performs one cycle from the liquid draining step (step S3 in FIG. 5) to the upflow forming step (step S8 in FIG. 5). Therefore, this cycle is performed twice. The steps from the liquid draining step (step S3 in FIG. 5) to the repeating step (step S9 in FIG. 5) correspond to a rinse liquid supplying step in which pure water, an example of a rinse liquid, is supplied to the substrate W.

[0071] After the final upflow forming step (step S8 in FIG. 5) has been performed, with at least one substrate W held by the lifter 13 and pure water remaining in the inner bath 21, the lifting actuator 16 moves the lifter 13 from the lower position to the upper position (step S10 in FIG. 5). As a result, all of the substrates W held by the lifter 13 move upward away from the surface of the pure water in the inner bath 21 and out of the inner bath 21. The substrates W held by the lifter 13 are then transported to the drying processing tank 2d (see FIG. 1) and dried in the drying processing tank 2d.

[0072] Next, the effects of this embodiment will be described.

[0073] In this embodiment, while the second outer nozzle 31B stops discharging the processing liquid, the first outer nozzle 31A discharges the processing liquid toward the substrate W held on the lifter 13. Thereafter, while the first outer nozzle 31A stops discharging the processing liquid, the second outer nozzle 31B discharges the processing liquid toward the substrate W held on the lifter 13. This prevents the processing liquid discharged from the first outer nozzle 31A and the processing liquid discharged from the second outer nozzle 31B from colliding with each other before reaching the substrate W, thereby preventing a decrease in the kinetic energy of the processing liquid before colliding with the substrate W. Furthermore, if the total time for discharging the processing liquid toward the substrate W is the same, the consumption of the processing liquid can be reduced compared to when the processing liquid is discharged from both the first outer nozzle 31A and the second outer nozzle 31B.

[0074] In this embodiment, while one of the first outer nozzle 31A and the second outer nozzle 31B stops discharging the processing liquid, the lifter 13 is moved back and forth vertically, and the processing liquid is discharged from the other of the first outer nozzle 31A and the second outer nozzle 31B toward the substrate W held by the lifter 13. The lifter 13 reciprocates between an upper turn-back position and a lower turn-back position. Regardless of which position the lifter 13 is located within this range, the processing liquid discharged from the first outer nozzle 31A or the second outer nozzle 31B directly collides with the substrate W. This makes it possible to expand the area over which the processing liquid directly collides with the substrate W, allowing the processing liquid to directly collide with a wider area on the front and back surfaces of the substrate W.

[0075] In this embodiment, the processing liquid in the inner bath 21 is discharged whether the first one-sided discharging process or the second one-sided discharging process is being performed. When a rinsing liquid is discharged toward a substrate W having a chemical liquid attached thereto, the chemical liquid mixes with the rinsing liquid that collides with the substrate W. The processing liquid that collides with the substrate W may contain foreign matter such as particles. By discharging the processing liquid in the inner bath 21, it is possible to discharge from the inner bath 21 a processing liquid that contains impurities, that is, a liquid or solid different from the processing liquid discharged from the first outer nozzle 31A or the second outer nozzle 31B, and to make it difficult for such processing liquid to reattach to the substrate W.

[0076] In this embodiment, after the first one-sided discharging step and the second one-sided discharging step, both the first outer nozzle 31A and the second outer nozzle 31B are caused to discharge the processing liquid while stopping the discharge of the processing liquid from the inner tank 21. Since the discharge of the processing liquid from the inner tank 21 is stopped, the processing liquid accumulates in the inner tank 21. Furthermore, since both the first outer nozzle 31A and the second outer nozzle 31B discharge the processing liquid, the processing liquid in the inner tank 21 increases at a faster rate than when one of the first outer nozzle 31A and the second outer nozzle 31B stops discharging the processing liquid.

[0077] When the first outer nozzle 31A and the second outer nozzle 31B are ejecting the processing liquid, the lifter 13 is located in the lower position, and the substrate W is placed in the storage space 21s of the inner bath 21. Therefore, the processing liquid ejected from the first outer nozzle 31A and the second outer nozzle 31B can be caused to collide with the substrate W, and the processing liquid accumulated in the inner bath 21 can be brought into contact with the substrate W. Furthermore, since the processing liquid is ejected from the first outer nozzle 31A or the second outer nozzle 31B while being discharged from the inner bath 21, and then the processing liquid is accumulated in the inner bath 21, at least a portion of the substrate W can be placed in processing liquid that is free of or contains few impurities. This allows the substrate W to be efficiently processed with the processing liquid.

[0078] In this embodiment, while the discharge of the processing liquid from the inner bath 21 is stopped, not only are both the first outer nozzle 31A and the second outer nozzle 31B caused to eject the processing liquid, but the processing liquid nozzle 23, which is positioned so that at least a portion of the processing liquid comes into contact with the processing liquid in the inner bath 21, also ejects the processing liquid. Therefore, the processing liquid in the inner bath 21 increases at a faster rate than when only the first outer nozzle 31A and the second outer nozzle 31B eject the processing liquid. This makes it possible to shorten the time required for the processing liquid to accumulate in the inner bath 21, and therefore the time required for processing the substrates W.

[0079] Next, another embodiment will be described.

[0080] One or both of the two outer nozzles 31 may discharge the processing liquid not only when the lifter 13 is located in the lower position but also when the lifter 13 is located in a position other than the lower position. Alternatively, one or both of the two outer nozzles 31 may discharge the processing liquid only when the lifter 13 is located in a position other than the lower position.

[0081] 5, if the substrate W can be sufficiently treated in the first cycle from the liquid draining step (step S3 in FIG. 5) to the upflow forming step (step S8 in FIG. 5), the second cycle does not need to be performed. Alternatively, the third or subsequent cycles may be performed.

[0082] The discharge of the processing liquid from the inner bath 21 may be stopped during either the first one-side discharging step (step S4 in FIG. 5) or the second one-side discharging step (step S5 in FIG. 5). That is, the processing liquid may be discharged from one of the two outer nozzles 31 while the discharge of the processing liquid from the inner bath 21 is stopped. In the processing of the substrate W shown in FIG. 5, the draining step may be stopped simultaneously with or before the start of the first one-side discharging step.

[0083] After the first one-side discharge process and the second one-side discharge process, the processing liquid may be stored in the inner tank 21 with the lifter 13 in the lower position by causing both outer nozzles 31 to stop discharging the processing liquid while causing both processing liquid nozzles 23 to discharge the processing liquid.

[0084] After the first one-sided discharging step and before the second one-sided discharging step, the treatment liquid may be discharged from both outer nozzles 31. In this case, it is preferable that the time during which both outer nozzles 31 discharge the treatment liquid is shorter than the time during which one outer nozzle 31 (the first outer nozzle 31A or the second outer nozzle 31B) discharges the treatment liquid. This is because the consumption of the treatment liquid can be reduced.

[0085] Any two or more of the above-mentioned features may be combined. Any two or more of the above-mentioned steps may be combined.

[0086] Although the embodiments of the present invention have been described in detail, these are merely examples used to clarify the technical contents of the present invention, and the present invention should not be construed as being limited to these examples. The spirit and scope of the present invention are limited only by the appended claims. [Explanation of symbols]

[0087] 1: substrate processing apparatus, 2: processing unit, 2L: liquid processing tank, 2d: drying processing tank, 3: control device, 3a: computer main body, 3b: CPU, 3c: memory, 3d: peripheral device, 3e: storage, 3f: reader, 3g: communication device, 3h: input device, 3i: display device, 8: transport system, 9: carrier transport device, 10: posture conversion robot, 11: main transport robot, 12: sub-transport robot, 13: lifter, 14: support bar, 15: base plate, 16: lifting actuator, 21: inner tank, 21b: bottom wall, 21o: opening, 21p: peripheral wall, 21s: storage space, 22: outer tank, 23: processing liquid nozzle, 23p: discharge port, 24c: common piping, 24i: Individual piping, 25p: chemical piping, 25v: chemical valve, 26p: rinse piping, 26v: rinse valve, 27p: discharge piping, 27v: drain valve, 28p: discharge piping, 28v: drain valve, 31: outer nozzle, 31A: first outer nozzle, 31B: second outer nozzle, 31h: nozzle head, 31t: nozzle tube, 32A: first rinse valve, 32B: second rinse valve, 32p: rinse piping, 32v: rinse valve, CA: carrier, C1: center, HC: host computer, L1: reference line, LP: load port, P: program, RC: recipe, RM: removable media, S1 to S10: steps, W: substrate

Claims

1. a substrate holding step of holding the substrate in an upright position by the lifter, which is vertically movable between an upper position where the substrate held by the lifter is disposed above an opening of the inner tank and a lower position where the substrate held by the lifter is disposed in a storage space of the inner tank; a first one-sided discharging step of discharging the processing liquid from a first outer nozzle, which is disposed above the inner tank so as to be located on the opposite side of the second outer nozzle with respect to a vertical line passing through the center of the substrate when viewed in a direction perpendicular to the substrate held by the lifter, while causing a second outer nozzle, which is disposed above the inner tank and discharging the processing liquid toward the substrate held by the lifter, to discharge the processing liquid; a second one-sided discharge step of causing the second outer nozzle to discharge the processing liquid while causing the first outer nozzle to stop discharging the processing liquid.

2. 2. The substrate processing method of claim 1, further comprising a reciprocating step of vertically reciprocating the lifter within a range in which the processing liquid ejected from the first outer nozzle or the second outer nozzle continues to collide with the substrate while the first one-sided ejection step or the second one-sided ejection step is being performed, or while either the first one-sided ejection step or the second one-sided ejection step is being performed.

3. 3. The substrate processing method according to claim 1, further comprising a liquid draining step of draining the processing liquid from the inner tank regardless of whether the first one-sided discharging step or the second one-sided discharging step is being performed.

4. 4. The substrate processing method according to claim 3, further comprising, after the first one-sided discharging process and the second one-sided discharging process, a double-sided discharging process of causing both the first outer nozzle and the second outer nozzle to discharge the processing liquid while stopping discharge of the processing liquid from the inner tank with the lifter positioned at the lower position.

5. 5. The substrate processing method according to claim 4, further comprising an upflow forming step of causing a processing liquid nozzle, at least a portion of which is arranged in a position where it comes into contact with the processing liquid in the inner tank and which discharges the processing liquid toward the storage space of the inner tank, to discharge the processing liquid while the both-side discharge step is being performed.

6. an inner tank that defines an opening through which a substrate passes vertically and a storage space that accommodates the substrate that has passed downward through the opening, and that stores a processing liquid to be supplied to the substrate in the storage space; a lifter for holding the substrate in an upright position; an elevation actuator that vertically moves the lifter between an upper position where the substrate held by the lifter is disposed above the opening of the inner tank and a lower position where the substrate held by the lifter is disposed in the storage space of the inner tank; a first outer nozzle and a second outer nozzle that are disposed above the inner tank so as to be located on opposite sides of a vertical line passing through the center of the substrate when viewed in a direction perpendicular to the substrate held by the lifter, and that discharge a processing solution toward the substrate held by the lifter; The first outer nozzle and the second outer nozzle perform a first one-sided discharge process in which the first outer nozzle discharges the processing liquid when the second outer nozzle stops discharging the processing liquid, and a second one-sided discharge process in which the second outer nozzle discharges the processing liquid when the first outer nozzle stops discharging the processing liquid.

7. 7. The substrate processing apparatus of claim 6, wherein the lifting actuator performs a reciprocating process of vertically reciprocating the lifter within a range in which the processing liquid ejected from the first outer nozzle or the second outer nozzle continues to collide with the substrate when the first one-sided ejection process or the second one-sided ejection process is being performed, or when either the first one-sided ejection process or the second one-sided ejection process is being performed.

8. the substrate processing apparatus further includes a drain valve that switches between an open state in which the processing liquid is discharged from the inner bath and a closed state in which the processing liquid is stopped from being discharged from the inner bath; 8. The substrate processing apparatus according to claim 6, wherein the drain valve performs a drain step of discharging the processing liquid from the inner tank regardless of whether the first one-sided discharge step or the second one-sided discharge step is being performed.

9. 9. The substrate processing apparatus according to claim 8, wherein, after the first one-sided discharge process and the second one-sided discharge process, the first outer nozzle and the second outer nozzle perform a double-sided discharge process in which both the first outer nozzle and the second outer nozzle discharge processing liquid while the drain valve is in the closed state and the lifter is positioned at the lower position.

10. the substrate processing apparatus further includes a processing liquid nozzle disposed at a position where at least a portion thereof is in contact with the processing liquid in the inner bath and configured to discharge the processing liquid toward the storage space of the inner bath; The substrate processing apparatus according to claim 9 , wherein the processing liquid nozzle performs an upflow forming step of discharging the processing liquid while the both-side discharging step is being performed.

Images