Thin film deposition furnace tube, thin film deposition method, and processing device

Abstract

The present invention discloses a furnace tube for thin film deposition, comprising a process tube, a wafer boat arranged in the process tube and provided with a multi-layer support member along the length of the process tube, and a gas supply tube arranged in the process tube and provided with a multi-layer gas supply hole along the length of the process tube. A multi-layer exhaust hole is arranged along the length of the side wall of the process tube, and the distribution area of ​​the gas supply hole gradually decreases from top to bottom along the length of the side wall of the process tube, and the distribution area of ​​the exhaust hole gradually decreases from top to bottom along the length of the side wall of the process tube. This makes it possible to make the gas supply amount of the gas supply hole of each layer and the gas exhaust amount of the exhaust hole of each layer the same, and to keep the uniformity of the thin film deposited on the substrate of each layer constant.

Description

[Technical field]

[0001] The present invention relates to the technical field of semiconductor manufacturing, and more particularly to a furnace tube for thin film deposition, a thin film deposition method, and a processing apparatus. [Background technology]

[0002] As the size of semiconductor devices decreases, there is an increasing need for techniques to deposit thin films on larger substrate areas. Deposition of semiconductor thin films with more uniform composition and thickness is crucial for the production of high quality semiconductor devices. Currently, tube-assisted chemical vapor deposition (CVD) and tube-assisted atomic layer deposition (ALD) hold a large market share as methods for depositing semiconductor thin films.

[0003] In a conventional tube-based low pressure chemical vapor deposition (LPCVD) process, two or more volatile gas precursors react and dissociate at the substrate surface to form a thin film. However, the conventional tube-based deposition process is associated with a variety of factors, including gas flow distribution, substrate temperature, substrate pressure, and gas flow rate. Any changes in these factors during the process will result in inconsistent quality of the deposited film and equipment failure.

[0004] Currently, vertical tube ALD also suffers from the drawback of non-uniform gas injection into the gas supply tube. In addition, the design of the process tube in the tube is prone to defects that prevent the uniform distribution of gas precursors on the substrate surface. It is particularly important to improve the design of the gas supply tube and process tube using the vertical tube to achieve uniform distribution of gas precursors on the substrate surface.

[0005] In conclusion, to solve the above problems, a new design of the furnace tube needs to be proposed. Summary of the Invention

[0006] In view of the above-mentioned drawbacks of the conventional technology, the present invention aims to provide a furnace tube for thin film formation that can be used to solve the problem of non-uniform distribution of process gas on a substrate surface in the vertical furnace tube of the conventional technology.

[0007] In order to achieve the above and other related objects, the present invention provides a furnace tube for thin film deposition, the furnace tube comprising: A process tube; a wafer boat disposed within the process tube, the wafer boat having a multi-layer support member disposed along a length of the process tube for supporting multiple layers of substrates; a gas supply pipe disposed within the process tube, the gas supply pipe having multiple gas supply holes provided along a longitudinal direction of the process tube, the gas supply pipe having multiple gas supply holes in each layer corresponding to the substrate in each layer and supplying a process gas to the substrate in each layer; a plurality of exhaust holes disposed on a side wall of the process tube along a length direction of the side wall of the process tube, each of the exhaust holes corresponding to the substrates of each layer; The gas supply pipe is characterized in that the distribution area of ​​the multiple gas supply holes in the gas supply pipe gradually becomes smaller from top to bottom along the length direction of the side wall of the process tube, and the distribution area of ​​the multiple exhaust holes in the side wall of the process tube gradually becomes smaller from top to bottom along the length direction of the side wall of the process tube, so that the gas supply amount of the multiple gas supply holes in each layer and the gas exhaust amount of the multiple exhaust holes in each layer are respectively the same.

[0008] In one embodiment of the present invention, the exhaust holes of each layer are slit holes, facing the gas supply holes of each layer, and the heights of the slit holes of each layer are the same, and the lengths of the slit holes of each layer are gradually shortened from top to bottom along the longitudinal direction of the side wall of the process tube.

[0009] In one embodiment of the present invention, the exhaust holes in each layer are small holes and face the gas supply holes in each layer.

[0010] In one embodiment of the present invention, the exhaust holes in each layer are slit holes, and the slit holes in each layer are located on a circle on the side wall of the process tube.

[0011] In one embodiment of the invention, the plurality of exhaust holes in each layer are the same size, and the number of the plurality of exhaust holes in each layer gradually decreases from top to bottom along the length of the side wall of the process tube.

[0012] In one embodiment of the present invention, the number of the plurality of exhaust holes in each layer is the same, and the size of the plurality of exhaust holes in each layer gradually decreases from top to bottom along the length direction of the side wall of the process tube.

[0013] In one embodiment of the present invention, the lengths of the slit holes located on a circle in the side wall of the process tube gradually increase as they move away from the gas supply hole.

[0014] In one embodiment of the present invention, the size of the plurality of slit holes in each layer gradually decreases from top to bottom along the length direction of the side wall of the process tube.

[0015] In one embodiment of the invention, there are multiple sets of the gas supply tubes uniformly distributed around the circumference of the process tube.

[0016] In one embodiment of the present invention, the gas supply holes in each layer are small holes and have the same size, and the number of the gas supply holes in each layer gradually decreases from top to bottom along the length of the gas supply pipe.

[0017] In one embodiment of the present invention, the multiple gas supply holes in each layer are multiple small holes, the number of the multiple gas supply holes in each layer is the same, and the size of the multiple gas supply holes in each layer gradually decreases from top to bottom along the longitudinal direction of the gas supply pipe.

[0018] In one embodiment of the present invention, the gas supply holes in each layer are slit holes, and the length of the gas supply holes in each layer gradually decreases from top to bottom along the longitudinal direction of the gas supply pipe.

[0019] In one embodiment of the invention, at least one first suction port is disposed within the process tube.

[0020] In one embodiment of the invention, at least one second suction port is located on the outside of the process tube.

[0021] In one embodiment of the present invention, at least one pair of high frequency electrodes is disposed inside or outside the process tube, and the at least one pair of high frequency electrodes is provided with two insulating sleeves.

[0022] In one embodiment of the present invention, a liner tube which is a sleeve on the outside of the process tube; and a heating assembly, a sleeve on the outside of the liner tube, for heating the liner tube.

[0023] In one embodiment of the invention, at least one pair of radio frequency electrodes is disposed on the exterior of the liner tube.

[0024] The present invention further provides a method for forming a thin film using a furnace tube based on chemical vapor deposition (CVD), comprising the steps of: Step 1 of loading a plurality of substrates onto a multi-layer support member of a wafer boat, and then loading the wafer boat into a process tube, a sidewall of a gas supply pipe in the process tube is provided with multiple gas supply holes, and a process gas is supplied to each layer of substrates from bottom to top along a length direction of the process tube through the multiple gas supply holes, wherein a distribution area of ​​the multiple gas supply holes in the gas supply pipe is set to be gradually smaller from top to bottom along a length direction of a sidewall of the process tube, so that the amount of gas supplied to each layer of substrates in the process tube is the same; Step 2: depositing the process gas to form a thin film on the substrate surface of each layer; and step 3 of exhausting excess process gas through multiple exhaust holes provided on a side wall of the process tube, the distribution area of ​​the multiple exhaust holes on the side wall of the process tube being configured to gradually become smaller from top to bottom along the length direction of the side wall of the process tube, so that the exhaust amount of the substrate of each layer is the same, and the excess gas is discharged by a gas pump.

[0025] The present invention further provides a method for forming a thin film using a furnace tube based on chemical vapor deposition (CVD), comprising the steps of: Step 1 of loading a plurality of substrates onto a multi-layer support member of a wafer boat, and then loading the wafer boat into a process tube, a sidewall of a gas supply pipe in the process tube being provided with multiple gas supply holes, and supplying process gas to each layer of substrates from bottom to top along the length direction of the process tube through the multiple gas supply holes, wherein a distribution area of ​​the multiple gas supply holes in the gas supply pipe is set to be gradually smaller from top to bottom along the length direction of the sidewall of the process tube, so that the amount of gas supplied to each layer of substrates in the process tube is the same; Step 2: dissociating the process gas into plasma by a radio frequency electrode and depositing the plasma to form a thin film on the substrate surface for each layer; and step 3 of exhausting excess process gas through multiple exhaust holes provided on a side wall of the process tube, the distribution area of ​​the multiple exhaust holes on the side wall of the process tube being gradually reduced from top to bottom along the length direction of the side wall of the process tube, so that the exhaust amount of the substrate for each layer is the same, and the excess gas is discharged by a gas pump.

[0026] The present invention further provides a method for forming a thin film using a furnace tube based on atomic layer deposition (ALD). a step 1 of loading a plurality of substrates onto a multi-layer support member of a wafer boat, and then loading the wafer boat into a process tube, a sidewall of a gas supply pipe in the process tube being provided with multiple gas supply holes, and a first process gas is supplied to each layer of substrates from bottom to top along a length direction of the process tube through the multiple gas supply holes, wherein a distribution area of ​​the multiple gas supply holes in the gas supply pipe is set to be gradually smaller from top to bottom along a length direction of a sidewall of the process tube, so that an amount of gas supplied to each layer of substrates in the process tube is the same; Step 2: a side wall of the process tube is provided with multiple exhaust holes, and a first process gas is adsorbed on the substrate surface of each layer, the distribution area of ​​the multiple exhaust holes on the side wall of the process tube is configured to be gradually reduced from top to bottom along the length direction of the side wall of the process tube, and excess first process gas is exhausted through the multiple exhaust holes, so that the exhaust amount of the substrate of each layer is the same, and the excess first process gas is discharged through a gas pump; Step 3: supplying a purge gas through the gas supply pipe to purge the inside of the process tube; supplying a second process gas to the substrates of each layer from bottom to top along the length of the process tube through the gas supply holes of multiple layers, so that the amount of gas supplied to the substrates of each layer in the process tube is the same; Step 5: reacting the second process gas with the first process gas adsorbed on the substrate surface of each layer to form a film on the substrate surface of each layer, and exhausting the remaining second process gas through the multiple exhaust holes of each layer, so that the exhaust amount of the substrate of each layer is the same, and the remaining second process gas is exhausted by a gas pump; Step 6: supplying a purge gas through a gas supply pipe to purge the inside of the process tube; and Step 7 of repeating Steps 1 to 6 above until the film formed on the substrate surface of each layer reaches a certain thickness.

[0027] The present invention further provides a method for forming a thin film using a furnace tube based on atomic layer deposition (ALD). a step 1 of loading a plurality of substrates onto a multi-layer support member of a wafer boat, and then loading the wafer boat into a process tube, a sidewall of a gas supply pipe in the process tube being provided with multiple gas supply holes, and a first process gas is supplied to each layer of substrates from bottom to top along a length direction of the process tube through the multiple gas supply holes, wherein a distribution area of ​​the multiple gas supply holes in the gas supply pipe is set to be gradually smaller from top to bottom along a length direction of a sidewall of the process tube, so that an amount of gas supplied to each layer of substrates in the process tube is the same; Step 2, in which a multi-layer exhaust hole is provided on a side wall of the process tube, and a first process gas is adsorbed on the substrate surface of each layer, the distribution area of ​​the multiple exhaust holes on the side wall of the process tube is configured to gradually decrease from top to bottom along the length direction of the side wall of the process tube, and excess first process gas is exhausted through the multiple exhaust holes, so that the exhaust amount of the substrate of each layer in the process tube is the same, and the excess first process gas is exhausted through a gas pump; Step 3: supplying a purge gas through the gas supply pipe to purge the inside of the process tube; Step 4: dissociating the second process gas into a second plasma by the action of a high frequency electrode, and supplying the second plasma to the substrates of each layer from bottom to top along the length direction of the process tube through the gas supply holes of multiple layers, so that the amount of gas supplied to the substrates of each layer in the process tube is the same; Step 5: reacting the second plasma with the first process gas adsorbed on the substrate surface of each layer to form a film on the substrate surface of each layer, and discharging the remaining second plasma through the multiple exhaust holes of each layer, so that the exhaust amount of the substrate of each layer is the same, and the remaining second plasma is discharged by a gas pump; Step 6 of supplying a purge gas through the gas supply pipe to purge the inside of the process tube; and Step 7 of repeating Steps 1 to 6 above until the film formed on the substrate surface of each layer reaches a certain thickness.

[0028] In one embodiment of the present invention, when the first process gas is supplied in step 1, a high frequency power source is turned on, and the first process gas is dissociated into a first plasma by the action of a high frequency electrode before the first process gas is supplied to the gas supply pipe, and the first plasma is supplied to the substrates of each layer from bottom to top along the length direction of the process tube through the gas supply holes of multiple layers, thereby making the amount of gas supplied to the substrates of each layer in the process tube the same.

[0029] The present invention further comprises a processing device. The processing device of the present invention comprises: a holding device for holding the part to be machined; a punching device disposed on the holding device for punching holes in the part; a control device electrically connected to the punching device, the punching device being movable along the length of the part under the action of the control device and configured to control the punching positions and / or punching sizes of the punching device so that a distribution area of ​​a plurality of holes in the part becomes gradually smaller from top to bottom along the length of a sidewall of the part; A drive device connected to the holding device for rotating the part is provided.

[0030] In one embodiment of the present invention, the holding device further comprises clamp structures removably disposed on both ends thereof for clamping a plurality of the parts to be processed.

[0031] The present invention further provides a gas supply tube for a thin film deposition furnace tube. The gas supply pipe of the present invention is provided with multiple gas supply holes along the length, and the distribution area of ​​the multiple gas supply holes gradually becomes smaller from top to bottom along the length of the side wall of the gas supply pipe, so that when gas is supplied from bottom to top, the gas supply amount of the multiple gas supply holes in each layer is the same.

[0032] The present invention further provides a process tube for a furnace tube for thin film deposition. The side wall of the process tube of the present invention is provided with multiple exhaust holes along the length direction, and the distribution area of ​​the multiple exhaust holes gradually decreases from top to bottom along the length direction of the side wall of the process tube, so that the exhaust amount of the multiple exhaust holes in each layer is the same.

[0033] In one embodiment of the present invention, the exhaust holes of each layer are slit holes, the height of the slit holes of each layer is the same, and the length of the slit holes of each layer gradually decreases from top to bottom along the longitudinal direction of the side wall of the process tube.

[0034] In one embodiment of the present invention, the exhaust holes in each layer are small holes and have the same size, and the number of the exhaust holes in each layer gradually decreases from top to bottom along the length of the sidewall of the process tube.

[0035] In one embodiment of the present invention, the exhaust holes in each layer are small holes, the number of the exhaust holes in each layer is the same, and the size of the exhaust holes in each layer gradually decreases from top to bottom along the length of the side wall of the process tube.

[0036] In one embodiment of the present invention, the exhaust holes in each layer are slit holes, and the slit holes in each layer are located on a circle on the side wall of the process tube.

[0037] In one embodiment of the present invention, the size of the plurality of exhaust holes in each layer is the same and the number of the plurality of exhaust holes in each layer gradually decreases from top to bottom along the length of the sidewall of the process tube, or the number of the plurality of exhaust holes in each layer is the same and the size of the plurality of exhaust holes in each layer gradually decreases from top to bottom along the length of the sidewall of the process tube.

[0038] In one embodiment of the present invention, the slit holes located on a circle in the side wall of the process tube have different sizes.

[0039] In one embodiment of the present invention, the size of the plurality of slit holes in each layer gradually decreases from top to bottom along the length direction of the side wall of the process tube.

[0040] As described above, the furnace tube for thin film deposition of the present invention has the following advantageous effects compared to the prior art.

[0041] In the film-forming furnace tube of the present invention, the gas supply tube is provided with multiple gas supply holes, and the side wall of the process tube is provided with multiple exhaust holes. The distribution area of ​​the multiple gas supply holes gradually becomes smaller from top to bottom along the length direction of the side wall of the process tube, and the distribution area of ​​the multiple exhaust holes gradually becomes smaller from top to bottom along the length direction of the side wall of the process tube. This ensures that the gas supply amount of the multiple gas supply holes in each layer in the process tube is the same, and the exhaust amount of the multiple exhaust holes in each layer is the same, thereby ensuring the uniformity of the thin film formed on the substrate in each layer in the process tube. [Brief description of the drawings]

[0042] [Figure 1] FIG. 1 shows a schematic diagram of a furnace tube according to a first embodiment of the present invention. [Diagram 2] 2A and 2B respectively show top views of the furnace tube of FIG. 1 at positions AA' and BB' of the first embodiment without multiple radio frequency electrodes. [Diagram 3] 3A and 3B show top views of the furnace tube of FIG. 1 at locations AA' and BB', respectively, of a first embodiment in which multiple radio frequency electrodes are added within the process tube. [Figure 4] 4A and 4B show top views of the furnace tube of FIG. 1 at positions AA' and BB', respectively, of a first embodiment in which multiple radio frequency electrodes are added outside the process tube. [Diagram 5]5A and 5B respectively show top views of the core tube of FIG. 1 at positions AA' and BB' of a first embodiment in which multiple radio frequency electrodes are added outside the liner tube. [Figure 6A] FIG. 6A shows a schematic diagram of multiple gas supply holes in a gas supply pipe according to a first embodiment of the present invention. [Figure 6B] FIG. 6B shows a schematic diagram of various shapes of multiple gas feed holes provided by the present invention. [Figure 6C] FIG. 6C shows a schematic diagram of multiple gas feed holes in a gas feed tube in another embodiment of the present invention. [Figure 7] FIG. 7 shows a schematic diagram of a furnace tube according to a second embodiment of the present invention. [Figure 8] FIG. 8 shows a schematic diagram of a furnace tube according to a third embodiment of the present invention. [Figure 9A] FIG. 9A shows a schematic diagram of a furnace tube according to a fourth embodiment of the present invention. [Figure 9B] FIG. 9B shows a top view of the fourth embodiment of the present invention at the CC' position in FIG. 9A. [Figure 10] 10A, 10B, and 10C respectively show top views of several sets of gas delivery tubes provided by the present invention. [Figure 11] FIG. 11 shows a schematic logic diagram of a supply gas switch according to an eighth embodiment of the present invention. [Figure 12] FIG. 12 shows a schematic diagram of a processing apparatus according to a ninth embodiment of the present invention. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0043] Hereinafter, the embodiments of the present invention will be described through specific examples. Those skilled in the art can easily understand other advantages and effects of the present invention from the contents disclosed in this specification. The present invention can also be implemented or applied by other different specific embodiments. The details of this specification can be modified or changed based on different views and applications without departing from the spirit of the present invention.

[0044] Please refer to Figures 1 to 12. It should be noted that the drawings provided in this embodiment only show the basic concept of the present invention in a schematic manner. The drawings are not drawn according to the number, shape, and size of parts in an actual implementation, but only show parts related to the present invention. The shape, number, and proportion of each part in an actual implementation can be changed arbitrarily, and the layout of parts can also be made more complicated.

[0045] First embodiment The present invention provides a furnace tube for thin film deposition. Specifically, as shown in FIG. 1, FIG. 2A, and FIG. 6A, the furnace tube includes a process tube 1, a wafer boat, a gas supply pipe 2, a liner tube 3, and a heating assembly 4. The wafer boat is disposed in the process tube 1 along the longitudinal direction of the process tube 1 together with a multi-layer support member to support a multi-layer substrate (not shown in the accompanying drawings). The gas supply pipe 2 is disposed in the process tube 1. The gas supply pipe 2 is provided with multi-layer gas supply holes 201 along the longitudinal direction of the process tube 1. The multiple gas supply holes 201 in each layer correspond to the substrates in each layer, and supply process gas to the substrates in each layer. The furnace tube can have one or more gas supply pipes 2. Also, a corresponding number of gas supply pipes 2 are provided according to process requirements. For example, three types of process gases are used when growing a SiON film, so three gas supply pipes 2 are provided. Each type of process gas corresponds to one gas supply pipe. Two types of process gases are used when growing a SiN film, so two gas supply pipes 2 are provided. The sidewall of the process tube 1 is provided with multiple layers of exhaust holes 101 along its length. The multiple exhaust holes 101 of each layer correspond to the substrate of each layer. The distribution area of ​​the multiple gas supply holes 201 gradually becomes smaller from top to bottom along the length direction of the sidewall of the process tube 1. Also, the distribution area of ​​the multiple exhaust holes 101 gradually becomes smaller from top to bottom along the length direction of the sidewall of the process tube 1. Here, the distribution area of ​​the multiple gas supply holes 201 is the sum of the areas of one or more gas supply holes 201. At each position along the length direction of the gas supply pipe 2, the distribution area of ​​the multiple gas supply holes 201 is the sum of the areas of one or more gas supply holes 201 in the circumferential direction of the gas supply pipe 2 at that position. Similarly, the distribution area of ​​the multiple exhaust holes 101 is the sum of the areas of one or more exhaust holes 101. At each position along the length direction of the sidewall of the process tube 1, the distribution area of ​​the multiple exhaust holes 101 is the sum of the areas of one or more exhaust holes 101 in the circumferential direction of the process tube 1 at that position.With this design, the gas supply amount of the multiple gas supply holes 201 of each layer is the same, and the gas replacement amount of the multiple gas exhaust holes 101 of each layer is the same, so that the gas is distributed uniformly on the substrate of each layer, and the uniformity of the film deposited on the substrate of each layer is obtained. The liner tube 3 is a sleeve on the outside of the process tube 1. The heating assembly 4 is disposed on the outside of the liner tube 3 and heats the liner tube 3.

[0046] In the first embodiment, as shown in FIG. 1, the exhaust holes 101 in each layer are slit holes, the heights of the slit holes 101 in each layer are the same, and the length of the slit holes 101 in each layer gradually decreases from top to bottom along the length direction of the side wall of the process tube 1. As shown in FIG. 2A, the exhaust holes 101 in each layer are arranged to face the gas supply holes 201 in each layer. As can be seen from the top views in the AA' and BB' directions shown in FIG. 2A and FIG. 2B, the length of the slit holes 101 in each layer gradually decreases from top to bottom along the length direction of the side wall of the process tube 1. In addition, the opening angle α of the slit hole 101 at the upper position AA' of the process tube 1 is larger than the opening angle β of the slit hole 101 at the lower position BB' of the process tube 1. As a result, the distribution area of ​​the exhaust holes 101 gradually decreases from top to bottom along the length direction of the side wall of the process tube 1. By exhausting gas so that the exhaust amount of the substrate of each layer is uniform, the exhaust amount of the substrate of each layer in the process tube 1 is the same.

[0047] As shown in Figures 2A and 2B, at least one first suction port 102 is disposed in the process tube 1. When performing a film formation process by atomic layer deposition (ALD), it is necessary to purge the inside of the process tube 1 by flowing a purge gas after exhausting the remaining process gas with a gas pump. At this time, the gas pump connected to the first suction port 102 can be opened to quickly extract the purge gas through the first suction port 102, thereby improving the processing efficiency. A plurality of first suction ports 102 can be provided uniformly distributed along the inner circumference of the process tube 1.

[0048] At least one second suction port 103 is disposed on the outside of the process tube 1. A plurality of second suction ports 103 may be provided, uniformly distributed along the outer circumference of the process tube 1. When a film formation process is performed by chemical vapor deposition (CVD) or atomic layer deposition (ALD), the remaining process gas in the process tube 1 is exhausted by a gas pump through the second suction port 103. Therefore, when a film formation process is performed by chemical vapor deposition (CVD), only the second suction port 103 may be provided and the first suction port 102 may be omitted. When a thin film formation process is performed by atomic layer deposition (ALD), only the second suction port 103 may be provided. In order to improve the processing efficiency, it is preferable to further provide the first suction port 102.

[0049] In another embodiment of the present invention, as shown in Fig. 3A and Fig. 3B, a pair of high-frequency electrodes 5 is provided inside the process tube 1. Two insulating sleeves 6 are attached to the outside of the pair of high-frequency electrodes 5, respectively. Among these, the material of the insulating sleeves 6 can be any one of quartz, silicon, alumina or other ceramics, or silicon carbide. The frequency of the RF electrodes (high-frequency electrodes) is set to 10 to 30 MHz. Z The rated power can be 0.5 to 5 kW, and the applied power can be 0.1 to 3 kW.

[0050] 4A and 4B, in another embodiment of the present invention, a pair of high-frequency electrodes 5 is provided on the outside of the process tube 1. Two insulating sleeves 6 are attached to the outside of the pair of high-frequency electrodes 5, respectively. The material of the insulating sleeves 6 can be any one of quartz, silicon, alumina, other ceramics, or silicon carbide.

[0051] In yet another embodiment of the present invention, a set of radio frequency electrodes 5 are provided on the outside of the liner tube 3, as shown in Figures 5A and 5B.

[0052] In the first embodiment, as shown in FIG. 6A, the gas supply holes 201 in each layer of the gas supply pipe 2 are small holes, and the size of the small holes 201 in each layer is the same. The size of each small hole is d1. In addition, the number of the small holes 201 in each layer gradually decreases from top to bottom along the length direction of the gas supply pipe 2. As a result, the distribution area of ​​the gas supply holes 201 gradually decreases from top to bottom along the length direction of the side wall of the gas supply pipe 2. Since the supply gas is supplied from bottom to top, the gas flow rate on the lower side of the gas supply pipe 2 is larger than the gas flow rate on the upper side of the gas supply pipe 2. As a result, the gas supply to the substrate of each layer becomes uneven. Therefore, the number of small holes of the gas supply holes 201 in each layer gradually decreases from top to bottom along the length direction of the gas supply pipe 2, so that the amount of gas supplied to the substrate of each layer becomes the same.

[0053] In another embodiment of the present invention, the gas supply holes 201 of each layer are small holes, the number of small holes of the gas supply holes 201 of each layer is the same, and the size of the small holes of the gas supply holes 201 of each layer gradually decreases from top to bottom along the length direction of the gas supply pipe 2. This ensures that the amount of gas supplied to the substrate of each layer is the same.

[0054] As shown in FIG. 6B, the shape of the small holes of the gas supply holes 201 in each layer can be any of square, circular, elliptical, triangular, quadrilateral, trapezoidal, pentagonal, polygonal holes, and the like.

[0055] In yet another embodiment of the present invention, as shown in Fig. 6C, the gas supply holes 201 in each layer are slit holes, and the length of the slit holes 201 in each layer gradually decreases from top to bottom along the length direction of the gas supply pipe 2. The length of the slit hole 201 located at the upper end of the gas supply pipe 2 is d2, the length of the slit hole 201 located at the center of the gas supply pipe 2 is d3, and the length of the slit hole 201 located at the lower end of the gas supply pipe 2 is d4, where d2>d3>d4. This makes the amount of gas supplied to the substrate of each layer equal.

[0056] In summary, the gas supply pipe 2 supplies a uniform amount of gas to each layer of substrates from bottom to top along the length of the process tube 1, thereby ensuring that the amount of gas supplied to each layer of substrates within the process tube 1 is the same.

[0057] Second embodiment As shown in FIG. 7, the second embodiment provides a furnace tube for thin film deposition that differs from the first embodiment in the following respects.

[0058] The exhaust holes 101 of each layer are small holes, and are arranged to face the gas supply holes 201 of each layer. As shown in FIG. 7, the size of the small holes of the exhaust holes 101 of each layer is the same, and the number of small holes of the exhaust holes 101 of each layer gradually decreases from top to bottom along the length direction of the side wall of the process tube 1. As a result, the distribution area of ​​the exhaust holes 101 gradually decreases from top to bottom along the length direction of the side wall of the process tube 1. That is, the size of the small holes of the exhaust holes 101 of each layer is the same, and the density of the small holes of the exhaust holes 101 of each layer located at the upper part of the side wall of the process tube 1 is greater than the density of the small holes of the exhaust holes 101 of each layer located at the lower part of the side wall of the process tube 1. The present embodiment also aims to make the exhaust amount of the substrates of each layer in the process tube 1 the same by exhausting gas using an exhaust method that makes the amount of gas exhausted from the substrates of each layer uniform.

[0059] The other settings in this embodiment are the same as those in the first embodiment, so the description will be omitted.

[0060] Third embodiment As shown in FIG. 8, the third embodiment provides a furnace tube for thin film deposition that is distinguished from the first embodiment in the following respects.

[0061] The exhaust holes 101 of each layer are small holes, and are arranged to face the gas supply holes 201 of each layer. As shown in FIG. 8, the number of small holes of the exhaust holes 101 of each layer is the same, and the size of the small holes of the exhaust holes 101 of each layer gradually decreases from top to bottom along the length direction of the side wall of the process tube 1. As a result, the distribution area of ​​the exhaust holes 101 gradually decreases from top to bottom along the length direction of the side wall of the process tube 1. Here, the size d5 of the small holes of the exhaust holes 101 of each layer located at the upper part of the side wall of the process tube 1 is larger than the size d6 of the small holes of the exhaust holes 101 of each layer located at the lower part of the side wall of the process tube 1. The present embodiment also aims to make the exhaust amount of the substrates of each layer in the process tube 1 the same by exhausting gas using an exhaust method that makes the amount of gas exhausted from the substrates of each layer uniform.

[0062] The other settings in this embodiment are the same as those in the first embodiment, so the description will be omitted.

[0063] Fourth embodiment As shown in FIGS. 9A and 9B, the fourth embodiment provides a furnace tube for thin film deposition that is distinguished from the second or third embodiment in the following respects.

[0064] As shown in Figure 9A, the exhaust holes 101 in each layer are a number of small holes. As shown in Figure 9B, the exhaust holes 101 in each layer are arranged on a circle on the side wall of the process tube 1.

[0065] In one embodiment, the number of exhaust holes 101 in each layer is the same, and the size of the exhaust holes 101 in each layer gradually decreases from top to bottom along the length of the sidewall of the process tube 1. In another embodiment, the size of the exhaust holes 101 in each layer is the same, and the number of exhaust holes 101 in each layer gradually decreases from top to bottom along the length of the sidewall of the process tube 1.

[0066] 9B is a cross-sectional view taken along the CC' position in FIG. 9A, in which the lengths of the multiple slit holes 101 arranged on a circle in the sidewall of the process tube 1 gradually increase from near the gas supply hole 201 toward the direction away from the gas supply hole 201. The length l1 of the slit hole 101 close to the gas supply hole 201 is shorter than the length l2 of the slit hole 101 far from the gas supply hole 201.

[0067] The third embodiment shown in Fig. 8 can be combined with the fourth embodiment shown in Fig. 9A and Fig. 9B. That is, the size of the exhaust hole 101 in each layer gradually decreases from top to bottom along the length direction of the side wall of the process tube 1, and the length of the multiple slit holes 101 located on the circle in the side wall of the process tube 1 gradually increases from near the gas supply hole 201 to the direction away from the gas supply hole 201. It is also an object to make the exhaust amount of the substrates of each layer in the process tube 1 the same by exhausting the gas using an exhaust method that makes the amount of gas exhausted from the substrates of each layer uniform.

[0068] 10A to 10C, in the fourth embodiment, the furnace tube of the present invention includes a plurality of sets of gas supply pipes 2, which are uniformly distributed along the circumference of the process tube 1. Several sets of high-frequency electrodes 5 are provided corresponding to the several sets of gas supply pipes 2.

[0069] As shown in Fig. 10A, a set of gas supply pipes 2 and a set of high-frequency electrodes 5 are provided. As shown in Fig. 10B, two sets of gas supply pipes 2 are symmetrically arranged on both sides of the process tube 1, and two sets of high-frequency electrodes 5 are provided corresponding to the two sets of gas supply pipes 2. As shown in Fig. 10C, three sets of gas supply pipes 2 are evenly arranged along the circumference of the process tube 1, and the angle between two adjacent sets of gas supply pipes 2 is 120 degrees. Three sets of high-frequency electrodes 5 are provided corresponding to the three sets of gas supply pipes 2.

[0070] The other settings of this embodiment are the same as those of the second or third embodiment, so a description thereof will be omitted.

[0071] Fifth embodiment The present invention also provides a method for forming a thin film by chemical vapor deposition (CVD) using the furnace tube, which is realized based on the furnace tube of the first to fourth embodiments. Specifically, the method for forming a thin film includes the following steps: Step 1: Place multiple substrates on a multi-layer support member of a wafer boat, and load the wafer boat into a process tube 1. A gas supply method with a uniform gas supply amount is adopted to supply process gas to each layer of substrates from bottom to top along the length of the process tube 1 through gas supply pipe 2, so that the amount of gas supplied to each layer of substrates in the process tube 1 is the same. Step 2: A thin film deposition process is performed on the substrate surface for each layer. Step 3: A plurality of exhaust holes 101 are provided on the side wall of the process tube 1, and the remaining process gas is exhausted from the plurality of exhaust holes 101 using an exhaust method that equalizes the exhaust amount for each layer of substrate in the process tube 1, thereby making the exhaust amount for each layer of substrate in the process tube 1 uniform, and the remaining process gas is discharged by a gas pump.

[0072] The method for forming a thin film by chemical vapor deposition (CVD) using the furnace tube of the present invention will be described below with reference to forming silicon oxide on a substrate as an example, however, the embodiments may be embodied in various forms and should not be construed as being limited to the embodiments set forth herein.

[0073] In step 10, a plurality of substrates are placed on a multi-layer support member of a wafer boat, and then the wafer boat is placed inside the process tube 1. The temperature inside the process tube 1 is 700°C to 800°C, and a gas supply method with a uniform gas supply amount is adopted to supply a process gas of SiH with a flow rate of 0 to 1 slm. 2 Cl 2 and process gas N with a flow rate of 0 to 1 slm 2 O is supplied to each layer of substrates from bottom to top along the length of the process tube 1 via a gas supply pipe 2 so that the amount of gas supplied to each layer of substrates in the process tube 1 is the same. Step 20: Process gas SiH2 Cl 2 and process gas N 2 O is deposited on the substrate surface to form a thin film for each layer. Step 30: A plurality of exhaust holes 101 are provided on the side wall of the process tube 1, and the remaining process gas SiH is exhausted from the plurality of exhaust holes 101 by an exhaust method that uniformly exhausts the amount of exhaust for each layer of the substrate. 2 Cl 2 and process gas N 2 By exhausting O, the amount of exhaust for each layer of substrate in the process tube 1 is made the same, and the remaining process gas SiH 2 Cl 2 and process gas N 2 Discharge O with a gas pump.

[0074] Sixth embodiment The present invention also provides a method for forming a thin film by chemical vapor deposition (CVD) using the furnace tube, which is realized based on the furnace tube of the first to fourth embodiments. Specifically, the method for forming a thin film includes the following steps: Step 1: Place multiple substrates on a multi-layer support member of a wafer boat, and load the wafer boat into a process tube 1. A gas supply method with a uniform gas supply amount is adopted to supply process gas to each layer of substrates from bottom to top along the length of the process tube 1 through gas supply pipe 2, so that the amount of gas supplied to each layer of substrates in the process tube 1 is the same. Step 2: The process gas is dissociated into plasma by the action of the high frequency electrode 5, followed by deposition of a thin film on the substrate surface for each layer. Step 3: A plurality of exhaust holes 101 are provided on the side wall of the process tube 1, and the remaining process gas is exhausted from the plurality of exhaust holes 101 using an exhaust method that equalizes the exhaust amount for each layer of substrate in the process tube 1, thereby making the exhaust amount for each layer of substrate in the process tube 1 uniform, and the remaining process gas is discharged by a gas pump.

[0075] Seventh embodiment The present invention also provides a thin film deposition method based on atomic layer deposition (ALD) using a furnace tube, which is realized based on the furnace tube of the first to fourth embodiments. Specifically, the thin film deposition method includes the following steps. Step 1: Place multiple substrates on a multi-layer support member of a wafer boat, and load the wafer boat into a process tube 1. A first process gas is supplied to each layer of substrates from bottom to top along the length of the process tube 1 through a gas supply pipe 2 using a gas supply method with a uniform gas supply amount, so that the amount of gas supplied to each layer of substrates in the process tube 1 is the same. Step 2: The first process gas is adsorbed onto the surface of each layer of substrate, a multi-layer exhaust hole 101 is provided on the side wall of the process tube 1, and excess first process gas is exhausted from the multi-layer exhaust hole 101 so that the exhaust amount of each layer of substrate in the process tube 1 is equal, and the excess first process gas is discharged from the gas pump. Step 3: Supply purge gas through the first gas supply pipe 2 to purge the inside of the process tube 1. Step 4: Using a gas supply method with uniform gas supply volume, supply the second process gas to each layer of substrates along the length of the process tube 1 from bottom to top via the second gas supply pipe 2, so that the amount of gas supplied to each layer of substrates in the process tube 1 is the same. Step 5: The second process gas is reacted with the first process gas adsorbed on the substrate surface of each layer to form a film on the substrate surface of each layer, and the remaining second process gas is exhausted through multiple exhaust holes in each layer, so that the exhaust amount of the substrate for each layer is the same, and the remaining second process gas is exhausted by a gas pump. Step 6: Supply purge gas through the second gas supply pipe 2 to purge the inside of the process tube 1. Step 7: Repeat steps 1 to 6 above until the film formed on the substrate surface for each layer reaches a certain thickness.

[0076] Atomic layer deposition (ALD) process mainly includes silicon oxide, silicon nitride, metal atomic layer deposition, etc. The thin film forming method by atomic layer deposition (ALD) using the furnace tube of the present invention is shown below by taking silicon nitride as an example.

[0077] In step 10, a plurality of substrates are placed on a multi-layer support member of a wafer boat, and then the wafer boat is placed inside the process tube 1. The temperature inside the process tube 1 is 400°C to 650°C, and a process gas Si with a flow rate of 0 to 3 slm is supplied to each layer of substrates from bottom to top along the length of the process tube 1 through the first gas supply pipe 2. 2 Cl 6 or SiH 2 Cl 2 Therefore, the gas supply to the substrates of each layer in the process tube 1 is the same. In step 20, the substrate surface of each layer is 2 Cl 6 or SiH 2 Cl 2 The side wall of the process tube 1 is provided with a plurality of exhaust holes 101, and the remaining process gas Si is exhausted from the plurality of exhaust holes 101 by a uniform exhaust method from the substrate of each layer. 2 Cl 6 or SiH 2 Cl 2 By exhausting the same amount of process gas for each layer, the amount of exhaust gas for each layer is equalized. 2 Cl 6 or SiH 2 Cl 2 is discharged through a gas pump. In step 30, purge gas nitrogen is supplied through the first gas supply pipe 2 to purge the inside of the process tube 1 at a flow rate of 1 to 15 slm. In step 40, a process gas NH with a flow rate of 0 to 5 slm is supplied by a gas supply method having a uniform gas supply amount. 3 is supplied to each layer of substrates through a second gas supply pipe 2 from bottom to top along the length direction of the process tube 1, thereby making the amount of gas supplied to each layer of substrates in the process tube 1 the same. In step 50, the process gas NH 3 The Si adsorbed on the substrate surface of each layer 2 Cl 6 or SiH 2 Cl 2 The silicon nitride film is formed on the surface of each layer of the substrate by chemical reaction with the silicon nitride film. The remaining process gas NH 3 By exhausting the gas from the multi-layer exhaust hole 101, the amount of exhaust for each layer of the substrate becomes the same, and the remaining process gas NH 3 is discharged through the gas pump. In step 60, the inside of the process tube 1 is purged by supplying purge gas nitrogen through the second gas supply pipe 2. The flow rate of nitrogen is 1 to 15 slm. In step 70, the above steps 10 to 60 are repeated until the film formed on the substrate surface for each layer reaches a certain thickness.

[0078] According to the above method, when a silicon oxynitride thin film is deposited based on atomic layer deposition (ALD) using the furnace tube of the present invention, the temperature in the process tube 1 is 400° C. to 650° C., and the first process gas is Si 2 Cl 6 or SiH 2 Cl 2 The second process gas is NH 3 The third process gas is N with a flow rate of 0 to 5 slm. 2 It can be O.

[0079] According to the above method, when the furnace tube of the present invention is used for depositing a silicon oxide thin film based on atomic layer deposition (ALD), the temperature in the process tube 1 is 200°C to 600°C, and the first process gas is Si 2 Cl 6 The second process gas is H with a flow rate of 0 to 5 slm. 2 It can be O.

[0080] According to the above method, when the furnace tube of the present invention is used for forming an alumina thin film based on atomic layer deposition (ALD), the temperature in the process tube 1 is 300°C to 600°C, and the first process gas is TiCl 4 The second process gas is O with a flow rate of 0 to 5 slm. 3 It can be said that:

[0081] According to the above method, when a titanium nitride thin film is deposited by atomic layer deposition (ALD) using the furnace tube of the present invention, the temperature in the process tube 1 is 300°C to 600°C, and the first process gas is TiCl 4 The second process gas is NH 3 It can be said that:

[0082] Eighth embodiment As shown in Figure 11, the present invention also provides a method for forming a thin film based on atomic layer deposition (ALD) using multiple furnace tubes, which is realized based on the multiple furnace tubes of the above first to fourth embodiments. Specifically, the method for forming a thin film includes the following steps: Step 1: A plurality of substrates are placed on a multi-layer support member of a wafer boat, and then the wafer boat is placed inside a process tube 1. As shown in Fig. 11, at time t1, a first process gas is supplied to each layer of substrates from bottom to top along the length direction of the process tube 1 through a first gas supply pipe 2 by a uniform gas supply method, so that the amount of gas supplied to each layer of substrates in the process tube 1 is the same. Step 2: The first process gas is adsorbed onto the surface of the substrate of each layer, and multiple exhaust holes 101 are provided on the side wall of the process tube 1. Using an exhaust method that uniforms the amount of exhaust for each layer of substrate, the excess first process gas is exhausted from the multiple exhaust holes 101, thereby making the amount of exhaust for each layer of substrate in the process tube 1 uniform, and the excess first process gas is discharged by a gas pump. Step 3: As shown in FIG. 11, at time t2, a purge gas is supplied from the first gas supply pipe 2 to purge the inside of the process tube 1. Step 4: As shown in FIG. 11, at time t3, the second process gas is dissociated into a second plasma by the action of the high-frequency electrode 5, and the second plasma is supplied to each layer of substrates from bottom to top along the length direction of the process tube 1 through the second gas supply pipe 2 by a uniform supply method, so that the supply to each layer of substrates in the process tube 1 is uniform. Step 5: The second plasma reacts with the first process gas adsorbed on the substrate surface of each layer to form a thin film on the substrate surface of each layer, and the remaining second plasma is exhausted from the exhaust holes 101 of each layer using an exhaust method that uniforms the exhaust amount of the substrates of each layer, so that the exhaust amount of the substrates of each layer in the process tube 1 becomes uniform, and the remaining second plasma is discharged by the gas pump. Step 6: As shown in FIG. 11, at time t4, a purge gas is supplied from the second gas supply pipe 2 to purge the inside of the process tube 1. Step 7: Repeat steps 1 to 6 above until the film formed on the substrate surface for each layer reaches a certain thickness.

[0083] In another embodiment, in the above step 1, the high frequency power is turned on when the first process gas is supplied. Before the first process gas is supplied to the first gas supply pipe 2, the first process gas is dissociated into a first plasma by the action of the high frequency electrode 5. The first plasma is supplied to the substrates of each layer from bottom to top along the length direction of the process tube 1 through the gas supply pipe 2 in a uniform supply manner, so that the supply to the substrates of each layer in the process tube 1 is uniform.

[0084] Ninth embodiment 12, since the drilling techniques for the process tube 1 and the gas supply pipe 2 described in the first to eighth embodiments are relatively complicated, the present invention also provides a processing device for processing the above-mentioned process tube 1 and the gas supply pipe 2. The material of the process tube 1 and the gas supply pipe 2 may be quartz or silicon carbide.

[0085] The processing device includes a holding device 100, a punching device 300, a control device 400, and a driving device 500. The holding device 100 is used to hold a part to be processed. A punching device 300 for punching holes in the part is provided on the holding device 100. The control device 400 is electrically connected to the punching device 300, and the punching device 300 is movable along the length direction of the part by the operation of the control device 400. The control device 400 is configured to control the punching position and / or the punching size of the punching device 300, so that the distribution area of ​​the holes on the part gradually decreases from top to bottom along the length direction of the side wall of the part. The driving device 500 is connected to the holding device 100 and drives the part to rotate.

[0086] In one embodiment, the drilling device 300 may be a laser device.

[0087] In one embodiment, a holding device 100 is used to hold a process tube 1, which is a sleeve on the holding device 100. The processing equipment is also provided with clamping structures 200, which are removably disposed on both ends of the holding device 100, for clamping small workpieces. In this embodiment, the clamping structures 200 are used to clamp a gas supply pipe 2.

[0088] The present invention specifically and in detail discloses the relevant technology through the above embodiments and related drawings, and those skilled in the art can appropriately implement it. However, the above description is for explaining the present invention, and does not limit the present invention. The protection scope of the present invention is defined by the appended claims. The number of components is changed, or the components described herein are replaced with equivalent components, also fall within the scope of the present invention.

Claims

1. A furnace tube for thin film deposition, A process tube; a wafer boat disposed within the process tube, the wafer boat having a multi-layer support member disposed along a length of the process tube for supporting multiple layers of substrates; a gas supply pipe disposed within the process tube, the gas supply pipe having multiple gas supply holes provided along a longitudinal direction of the process tube, the gas supply pipe having multiple gas supply holes in each layer corresponding to the substrate in each layer and supplying a process gas to the substrate in each layer; a multi-layer exhaust hole disposed on the side wall of the process tube along a length direction of the side wall of the process tube, the multiple exhaust holes of each layer corresponding to the substrates of each layer; a distribution area of ​​the plurality of gas supply holes in the gas supply pipe gradually becomes smaller from top to bottom along the length direction of a side wall of the process tube, and a distribution area of ​​the plurality of exhaust holes in the side wall of the process tube gradually becomes smaller from top to bottom along the length direction of the side wall of the process tube, so that the gas supply amount of the plurality of gas supply holes in each layer and the gas exhaust amount of the plurality of exhaust holes in each layer are respectively the same.

2. 2. The furnace tube for thin film formation according to claim 1, wherein the exhaust holes of each layer are slit holes facing the gas supply holes of each layer, the heights of the slit holes of each layer are the same, and the lengths of the slit holes of each layer gradually become shorter from top to bottom along the longitudinal direction of the side wall of the process tube.

3. 2. The furnace tube for thin film deposition according to claim 1, wherein the exhaust holes in each layer are small holes facing the gas supply holes in each layer.

4. 2. The furnace tube for thin film deposition according to claim 1, wherein the exhaust holes in each layer are slit holes, and the slit holes in each layer are positioned on a circle in the side wall of the process tube.

5. 5. The furnace tube for thin film deposition according to claim 3, wherein the exhaust holes in each layer are the same size, and the number of the exhaust holes in each layer gradually decreases from top to bottom along the length direction of the side wall of the process tube.

6. 5. The furnace tube for thin film formation according to claim 3, wherein the number of the exhaust holes in each layer is the same, and the size of the exhaust holes in each layer gradually decreases from top to bottom along the longitudinal direction of the side wall of the process tube.

7. 5. The furnace tube for thin film deposition according to claim 4, wherein the lengths of the plurality of slit holes positioned on a circle in the side wall of the process tube gradually increase as the distance from the gas supply hole increases.

8. 8. The furnace tube for thin film deposition according to claim 7, wherein the size of the plurality of slit holes in each layer gradually decreases from top to bottom along the length direction of the side wall of the process tube.

9. 2. The furnace tube for thin film deposition according to claim 1, comprising a plurality of sets of said gas supply pipes uniformly distributed around a circumference of said process tube.

10. 2. The furnace tube for thin film formation according to claim 1, wherein the gas supply holes in each layer are small holes of the same size, and the number of the gas supply holes in each layer gradually decreases from top to bottom along the longitudinal direction of the gas supply pipe.

11. 2. The thin film deposition furnace tube of claim 1, wherein the gas supply holes in each layer are small holes, the number of the gas supply holes in each layer is the same, and the size of the gas supply holes in each layer gradually decreases from top to bottom along the longitudinal direction of the gas supply pipe.

12. 2. The furnace tube for thin film deposition according to claim 1, wherein the gas supply holes in each layer are slit holes, and the length of the gas supply holes in each layer gradually decreases from top to bottom along the longitudinal direction of the gas supply pipe.

13. The furnace tube for thin film deposition according to claim 1 , wherein at least one first suction port is disposed within the process tube.

14. The furnace tube for thin film deposition according to claim 1 , wherein at least one second suction port is disposed outside the process tube.

15. 2. The furnace tube for thin film deposition according to claim 1, wherein at least one pair of high frequency electrodes is disposed inside or outside said process tube, and at least one pair of high frequency electrodes is provided with two insulating sleeves.

16. a liner tube which is a sleeve on the outside of the process tube; 10. The furnace tube of claim 1 further comprising a heating assembly, the heating assembly being a sleeve on the outside of the liner tube for heating the liner tube.

17. 17. The furnace tube for thin film deposition according to claim 16, wherein at least one pair of high frequency electrodes is disposed outside the liner tube.

18. A method for forming a thin film using a furnace tube based on chemical vapor deposition (CVD), comprising the steps of: Step 1: loading a plurality of substrates onto a multi-layer support member of a wafer boat, and then loading the wafer boat into a process tube, a sidewall of a gas supply pipe in the process tube is provided with multiple gas supply holes, and a process gas is supplied to each layer of substrates from bottom to top along a length direction of the process tube through the multiple gas supply holes, wherein a distribution area of ​​the multiple gas supply holes in the gas supply pipe is set to be gradually smaller from top to bottom along a length direction of a sidewall of the process tube, so that an amount of gas supplied to each layer of substrates in the process tube is the same; Step 2: depositing the process gas to form a thin film on the substrate surface of each layer; a step 3 of exhausting excess process gas through multiple exhaust holes provided in a side wall of the process tube, the distribution area of ​​the multiple exhaust holes in the side wall of the process tube being configured to gradually become smaller from top to bottom along the longitudinal direction of the side wall of the process tube, thereby making the exhaust amount of the substrate of each layer the same, and the excess gas being discharged by a gas pump.

19. A method for forming a thin film using a furnace tube based on chemical vapor deposition (CVD), comprising the steps of: Step 1: loading a plurality of substrates onto a multi-layer support member of a wafer boat, then loading the wafer boat into a process tube, a gas supply pipe in the process tube having a sidewall with multiple gas supply holes, and supplying process gas to each layer of substrates from bottom to top along the length of the process tube through the multiple gas supply holes, wherein a distribution area of ​​the multiple gas supply holes in the gas supply pipe is set to be gradually smaller from top to bottom along the length of the sidewall of the process tube, so that the amount of gas supplied to each layer of substrates in the process tube is the same; Step 2: dissociating the process gas into plasma by a radio frequency electrode and depositing the plasma to form a thin film on the substrate surface for each layer; a step 3 of exhausting excess process gas through multiple exhaust holes provided in a side wall of the process tube, the distribution area of ​​the multiple exhaust holes in the side wall of the process tube being configured to gradually become smaller from top to bottom along a longitudinal direction of the side wall of the process tube, thereby making the exhaust amount of the substrate of each layer the same, and the step 3 of discharging the excess gas by a gas pump.

20. A thin film deposition method using a furnace tube based on atomic layer deposition (ALD), comprising: a step 1 of loading a plurality of substrates onto a multi-layer support member of a wafer boat, and then loading the wafer boat into a process tube, a sidewall of a gas supply pipe in the process tube being provided with multiple gas supply holes, and a first process gas is supplied to each layer of substrates from bottom to top along a length direction of the process tube through the multiple gas supply holes, the distribution area of ​​the multiple gas supply holes in the gas supply pipe being set so as to gradually become smaller from top to bottom along a length direction of a sidewall of the process tube, so that the amount of gas supplied to each layer of substrates in the process tube is the same; Step 2, a side wall of the process tube is provided with multiple exhaust holes, and a first process gas is adsorbed on the substrate surface of each layer, the distribution area of ​​the multiple exhaust holes on the side wall of the process tube is configured to be gradually reduced from top to bottom along the length direction of the side wall of the process tube, and excess first process gas is exhausted through the multiple exhaust holes, so that the exhaust amount of the substrate of each layer is the same, and the excess first process gas is discharged through a gas pump; Step 3: supplying a purge gas through the gas supply pipe to purge the inside of the process tube; Step 4: supplying a second process gas to the substrates of each layer from bottom to top along the length of the process tube through the gas supply holes of multiple layers, so that the gas supply amount to the substrates of each layer in the process tube is the same; Step 5: reacting the second process gas with the first process gas adsorbed on the substrate surface of each layer to form a film on the substrate surface of each layer, and exhausting the remaining second process gas through the multiple exhaust holes of each layer, so that the exhaust amount of the substrate of each layer is the same, and the remaining second process gas is exhausted by a gas pump; Step 6: supplying a purge gas through a gas supply pipe to purge the inside of the process tube; and step 7 of repeating steps 1 to 6 above until the film formed on the substrate surface for each layer reaches a certain thickness.

21. A thin film deposition method using a furnace tube based on atomic layer deposition (ALD), comprising: a step 1 of loading a plurality of substrates onto a multi-layer support member of a wafer boat, and then loading the wafer boat into a process tube, a sidewall of a gas supply pipe in the process tube being provided with multiple gas supply holes, and a first process gas is supplied to each layer of substrates from bottom to top along a length direction of the process tube through the multiple gas supply holes, the distribution area of ​​the multiple gas supply holes in the gas supply pipe being set so as to gradually become smaller from top to bottom along a length direction of a sidewall of the process tube, so that the amount of gas supplied to each layer of substrates in the process tube is the same; Step 2, in which a multi-layer exhaust hole is provided on the side wall of the process tube, and the first process gas is adsorbed on the substrate surface of each layer, the distribution area of ​​the multiple exhaust holes on the side wall of the process tube is configured to be gradually reduced from top to bottom along the length direction of the side wall of the process tube, and excess first process gas is exhausted through the multiple exhaust holes, so that the exhaust amount of the substrate of each layer in the process tube is the same, and the excess first process gas is exhausted through a gas pump; Step 3: supplying a purge gas through the gas supply pipe to purge the inside of the process tube; Step 4: dissociating the second process gas into a second plasma by the action of a high frequency electrode, and supplying the second plasma to the substrates of each layer through the gas supply holes of the process tube from bottom to top along the length direction of the process tube, so that the amount of gas supplied to the substrates of each layer in the process tube is the same; Step 5: reacting the second plasma with the first process gas adsorbed on the substrate surface of each layer to form a film on the substrate surface of each layer, and discharging the remaining second plasma through the multiple exhaust holes of each layer, so that the exhaust amount of the substrate of each layer is the same, and the remaining second plasma is discharged by a gas pump; Step 6: supplying a purge gas through the gas supply pipe to purge the inside of the process tube; and step 7 of repeating steps 1 to 6 above until the film formed on the substrate surface for each layer reaches a certain thickness.

22. 22. The method for forming a thin film using a furnace tube based on atomic layer deposition (ALD) according to claim 21, wherein in step 1, a high frequency power supply is turned on when the first process gas is supplied, the first process gas is dissociated into a first plasma by the action of a high frequency electrode before the first process gas is supplied to the gas supply pipe, and the first plasma is supplied to the substrate of each layer from bottom to top along the length direction of the process tube through the multi-layered gas supply holes, thereby making the amount of gas supplied to the substrate of each layer in the process tube the same.

23. a holding device for holding the part to be machined; a punching device disposed on the holding device for punching holes in the part; a control device electrically connected to the punching device, the punching device being movable along the length of the part under the action of the control device and configured to control the punching positions and / or punching sizes of the punching device so that a distribution area of ​​a plurality of holes in the part becomes gradually smaller from top to bottom along the length of a sidewall of the part; a drive device connected to the holding device for rotating the part, the drive device comprising:

24. 24. The processing apparatus of claim 23, further comprising clamping structures removably disposed on opposite ends of the holding device for clamping the part to be processed.

25. A gas supply pipe for a furnace tube for thin film formation, in which multiple gas supply holes are provided along the length direction, and the distribution area of ​​the multiple gas supply holes gradually becomes smaller from top to bottom along the length direction of the side wall of the gas supply pipe, so that when gas is supplied from bottom to top, the gas supply amount from the multiple gas supply holes in each layer is the same.

26. A process tube for a furnace tube for thin film deposition, the process tube having multiple exhaust holes arranged along the length of the side wall of the process tube, the distribution area of ​​the multiple exhaust holes gradually becoming smaller from top to bottom along the length of the side wall of the process tube, so that the exhaust volume of the multiple exhaust holes in each layer is the same.

27. 27. The process tube of a furnace tube for thin film formation as described in claim 26, wherein the exhaust holes of each layer are slit holes, the height of the slit holes of each layer is the same, and the length of the slit holes of each layer gradually becomes shorter from top to bottom along the longitudinal direction of the side wall of the process tube.

28. The process tube of a furnace tube for thin film deposition as described in claim 26, wherein the multiple exhaust holes in each layer are multiple small holes of the same size, and the number of multiple exhaust holes in each layer gradually decreases from top to bottom along the length direction of the side wall of the process tube.

29. 27. The process tube of a furnace tube for thin film formation as described in claim 26, wherein the multiple exhaust holes of each layer are multiple small holes, the number of the multiple exhaust holes of each layer is the same, and the size of the multiple exhaust holes of each layer gradually decreases from top to bottom along the longitudinal direction of the side wall of the process tube.

30. 27. The process tube of a furnace tube for thin film deposition according to claim 26, wherein the exhaust holes of each layer are slit holes, and the slit holes of each layer are located on a circle on the side wall of the process tube.

31. The process tube of a furnace tube for thin film formation as described in claim 30, wherein the size of the multiple exhaust holes in each layer is the same and the number of the multiple exhaust holes in each layer gradually decreases from top to bottom along the length direction of the side wall of the process tube, or the number of the multiple exhaust holes in each layer is the same and the size of the multiple exhaust holes in each layer gradually decreases from top to bottom along the length direction of the side wall of the process tube.

32. 31. The process tube of a furnace tube for thin film deposition according to claim 30, wherein the plurality of slit holes positioned on a circle in the side wall of the process tube have different sizes.

33. 33. The process tube of claim 32, wherein the size of the plurality of slit holes in each layer gradually decreases from top to bottom along the length direction of the side wall of the process tube.

Images