Laser Parts

Abstract

A laser component is identified, comprising a semiconductor laser chip (1) having a laser facet (1a) with an active zone (11) and an optical element (2) arranged downstream of the semiconductor laser chip (1) at the laser facet (1a), the semiconductor laser chip (1) and the optical element (2) being joined to one another by a welded joint (3) without the use of welding consumables.

Description

[Technical field]

[0001] A laser component is disclosed, as well as a method for manufacturing the laser component. Summary of the Invention [Problem to be solved by the invention]

[0002] One problem to be solved is to identify laser components that are particularly cost-effective. A further problem to be solved is to identify laser components that are particularly resistant to aging. A further problem to be solved is, among other things, to specify a method for manufacturing such laser components. [Means for solving the problem]

[0003] A laser component is identified. In operation, the laser component generates electromagnetic radiation, in particular laser radiation. The laser component is configured to generate electromagnetic radiation having a wavelength in a wavelength range between infrared radiation and ultraviolet radiation.

[0004] According to at least one embodiment, the laser component comprises a semiconductor laser chip, which may be, for example, an edge-emitting semiconductor laser chip or a surface-emitting semiconductor laser chip.

[0005] The semiconductor laser chip, for example, has a semiconductor body, a reflective outer surface that forms a resonator, and electrical connection points for contacting the semiconductor laser chip.

[0006] The semiconductor laser chip comprises a laser facet from which the laser radiation generated by the semiconductor laser chip is emitted during operation. The laser facet is formed, for example, by an outer surface, i.e. a side or cover surface, of the semiconductor laser chip.

[0007] The laser facet comprises an active zone, which includes the area where electromagnetic radiation generated during operation of the semiconductor laser leaves the semiconductor laser, for example in the area of ​​the active zone where an active layer of the semiconductor laser chip is adjacent to a reflective layer of the semiconductor laser chip, which is part of the resonator of the semiconductor laser chip.

[0008] According to at least one embodiment of the laser component, the laser component comprises an optical element arranged downstream of the semiconductor laser chip at the laser facet, the optical element being in particular behind the laser facet of the semiconductor laser chip in the emission direction of the semiconductor laser chip.

[0009] This allows all, or at least a majority, of the laser radiation leaving the semiconductor laser chip to pass through the optical element and be optically affected.

[0010] The optical element may be, for example, an optical element for beam shaping by optical refraction. For example, the optical element may be a lens for subsequently focusing laser light. The optical element may also be a diffractive optical element (DOE) based on the principle of optical diffraction, and the beam shaping may be based on the principle of optical diffraction.

[0011] The optical elements are formed from materials that are transparent to laser radiation, such as glass, semiconductor materials and / or plastic materials.

[0012] No other components of the laser component are disposed between the laser facet and the optical element, however, a gap may be present between the laser facet and the optical element, which may be at least partially filled with air, for example.

[0013] According to at least one embodiment of the laser component, the semiconductor laser chip and the optical element are joined to one another by a welded joint, which in the following means a non-destructive, detachable mechanical connection that is created between two joining counterparts of the laser component under the action of heat and / or pressure.

[0014] The weld joint does not use welding consumables, which means that the weld joint is formed solely by the mating materials that are being joined together by the weld joint, so the mating materials are joined directly together without the use of welding consumables, adhesives, or other joining materials.

[0015] According to at least one embodiment of the laser component, the laser component has a semiconductor laser chip having a laser facet with an active zone and an optical element arranged downstream of the semiconductor laser chip at the laser facet, the semiconductor laser chip and the optical element being connected to each other by a welded joint without the use of welding consumables.

[0016] Laser components are especially subject to the following considerations: for example, in semiconductor laser elements operated in open atmosphere, adhesion of foreign matter to the laser facets is observed, which leads to degradation of the laser components due to a reduction in optical power. The adhesion can be caused by dust or suspended particles in the surrounding air.

[0017] The laser component described here is based on the idea that an arrangement of optical elements particularly close to the laser facet reduces, inhibits and / or prevents the deposition of foreign matter from the surrounding atmosphere. The use of welded joints allows the laser component to be produced in a particularly cost-effective manner without the need for joining materials. Furthermore, no other materials, such as, for example, joining materials, need to be optimized with respect to their optical and / or thermal properties, which allows a particularly simple and cost-effective production.

[0018] According to at least one embodiment of the laser component, the distance between the optical element and the laser facet is at most 10 μm, in particular at most 7 μm or at most 1 μm. Distances of up to 500 nm are also possible. In particular, the minimum distance between the optical element and the laser facet is in the region of the active zone. It has been shown that such a small distance ensures a significant reduction or prevention of the deposition of foreign particles from the atmosphere on the laser facet.

[0019] According to at least one embodiment of the laser component, the optical element and the semiconductor laser chip are in direct contact with each other at the laser facet. For example, the direct contact between the two elements can be mediated by a weld joint, i.e., in this case, a weld joint is located between the optical element and the semiconductor laser chip, which mediates the direct physical contact of these two parts of the laser component.

[0020] According to at least one embodiment, the laser component comprises a carrier, to which the other laser components, in particular the semiconductor laser chip and the optical element, are attached. The carrier represents the mechanical support of the laser component. The optical element is connected to the semiconductor laser chip via the carrier, and a welded joint is arranged between the optical element and the carrier.

[0021] A welded joint can also be arranged between the optical element and the semiconductor laser chip, and these two parts do not have to be connected by a direct welded joint, in other words, it is also possible in particular to connect the optical element and the semiconductor laser chip via a carrier, with the welded joint being arranged only between the optical element and the carrier.

[0022] The carrier may have, on its outer surface facing the optical element, a material suitable for example for a weld joint, for example, the outer surface of the carrier facing the optical element may comprise a layer made of a metal oxide such as silicon dioxide and / or a semiconductor oxide, a glass and / or a glass ceramic, etc.

[0023] According to at least one embodiment of the laser component, the weld joint has a weld seam which extends in the connection area of ​​the optical element and the carrier and which includes the material of the optical element and the carrier.

[0024] According to at least one embodiment of the laser component, a weld joint is arranged between the optical element and the semiconductor laser chip. A weld joint can also be arranged between the optical element and the carrier of the laser component. However, it is also possible that the connection of these two parts of the laser component is only by a weld joint between the optical element and the semiconductor laser chip. The weld joint provides a direct physical contact between the optical element and the semiconductor laser chip.

[0025] The semiconductor laser chip may, for example, have a reflective layer comprising a metal oxide and / or a semiconductor oxide on the laser facet, and the reflective layer forms part of the resonator of the semiconductor laser chip. In particular, a welded joint can be formed with the materials of the optical element and the reflective layer.

[0026] For example, the reflective layer may include silicon dioxide, the optical element may be formed of or consist of glass, and the weld joint may include or consist of silicon dioxide, for example.

[0027] According to at least one embodiment of the laser component, the welded joint comprises a welded seam. The welded seam connects the materials in such a way that the materials are locked at the welded joint. By welded joint is understood the area where the parts are joined to each other. In particular, the welded seam is a welded joint along a connecting line or a connecting curve. In this case, the respective parts are only connected in a material-locking manner along the connecting line or connecting curve. In other words, the welded seam is spatially limited to the area of ​​the parts where the parts are joined to each other. However, the welded seam does not connect the opposing parts over the entire surface, in particular in a planar manner.

[0028] According to at least one embodiment of the laser component, the welded joint comprises a weld seam between the optical element and the semiconductor laser chip. In particular, the weld seam between the optical element and the semiconductor laser chip is the only connection between these two parts of the laser component. In particular, no additional joining material is used in the connection between the optical element and the semiconductor chip. The weld seam provides a direct physical contact between the optical element and the semiconductor laser chip.

[0029] According to at least one embodiment, the weld seam does not connect the optical element and the semiconductor laser chip in a planar manner, in other words, the weld seam is located along a spatially limited area, for example a line or a curve, between the optical element and the semiconductor laser chip.

[0030] According to at least one embodiment of the laser component, the weld joint extends in the connection area of ​​the optical element and the semiconductor laser chip and has a weld seam with the material of the optical element and the semiconductor laser chip. The weld seam extends, for example, along a curved line, so that a planar connection between the optical element and the semiconductor laser chip is generated by the weld joint. The weld seam may include several concentric and / or meandering curves, for example, arranged in a zigzag manner between the optical element and the semiconductor laser chip. In this way, a connection between the two parts that is as planar as possible can be generated.

[0031] For example, the weld joint may be spaced from the active zone and run only along one side of the active zone.

[0032] According to at least one embodiment of the laser component, the weld seam laterally surrounds the active zone, the weld seam being guided laterally around the active zone in the plane of the connection area of ​​the optical element and the semiconductor laser chip.

[0033] In this case, the active zone can be sealed with a weld seam that laterally surrounds the active zone, so that the active zone is laterally surrounded by the weld seam, the optical element and the semiconductor laser chip, which prevents foreign matter from accumulating in the active zone.

[0034] According to at least one embodiment of the laser component, the laser component does not have a sealed housing, which means, for example, that the laser component can comprise a non-sealed housing or that the laser component does not comprise any housing and the components of the laser component can be arranged together, for example, on a laser component carrier.

[0035] In particular, the arrangement of the optical elements at a short distance from the laser facet allows the absence of a sealed housing, which allows the production of a particularly compact and cost-effective laser component.

[0036] Further disclosed is a method for producing a laser component. In particular, the laser components described herein can be produced by this method. This means that all features disclosed for the laser component are also disclosed for the method and vice versa.

[0037] In accordance with at least one embodiment of the method, a semiconductor laser chip is first provided having a laser facet with an active zone.

[0038] According to at least one embodiment of the method, an optical element is provided, the optical element being disposed on the laser facet.

[0039] According to at least one embodiment of the method, in a further method step the semiconductor laser chip and the optical element are joined in the connection region by a welding process, the welding process being performed without consumables.

[0040] According to at least one embodiment of the method, the method comprises: providing a semiconductor laser chip having a laser facet with an active zone; Providing an optical element; Positioning an optical element at the laser facet; and bonding the semiconductor laser chip and the optical element at the connection area by a welding process that is performed without the use of welding consumables.

[0041] The semiconductor laser chip and the optical element can be directly connected at the interface between the semiconductor laser chip and the optical element by a welding process.

[0042] Alternatively or additionally, the optical element can be joined by a welding process in the connection area between the optical element and the carrier after the semiconductor laser chip is joined to the carrier, and the semiconductor laser chip and the optical element can be indirectly joined via the carrier after being joined to the carrier.

[0043] According to at least one embodiment of the method, the step of joining the semiconductor laser chip and the optical element in the connection area by a welding process includes the step of creating a weld seam. In particular, the weld seam between the optical element and the semiconductor laser chip is the only connection between these two parts of the laser component. In particular, no additional joining material is used in the connection between the optical element and the semiconductor chip.

[0044] According to at least one embodiment of the method, the weld seam is not generated in a planar manner between the optical element and the semiconductor laser chip. Specifically, the weld seam is generated in a spatially limited area (e.g., along a line or curve) between the optical element and the semiconductor laser chip.

[0045] According to at least one embodiment of the method, the welding process is carried out by focused laser light in the connection area. For this purpose, the laser light is, for example, guided through an optical element and focused at the interface between the parts to be joined. This creates a high power density area at the interface, where the joining partners are locally melted. The laser light is then moved, for example, along a curve, to create a weld seam made of the materials of the joining partners.

[0046] For example, a fusing process can be used, such as that used for glass bonding offered by Primoceler. However, alternative laser welding processes can also be used. If the optical element is attached to the carrier by a weld joint, the laser can also be focused through the carrier to the interface with the optical element, if the carrier material is suitable.

[0047] In the following, the laser components described herein and the methods described herein are explained in more detail with reference to example embodiments and associated figures. [Brief description of the drawings]

[0048] [Figure 1A] 1 is a schematic diagram further illustrating a first exemplary embodiment of the method described herein and a first exemplary embodiment of the laser component described herein. [Figure 1B] 1 is a schematic diagram illustrating in further detail a first exemplary embodiment of the method described herein and a first exemplary embodiment of the laser component described herein. [Figure 2A] 2 is a schematic diagram illustrating in further detail a second exemplary embodiment of the method described herein and a second exemplary embodiment of the laser component described herein. [Figure 2B] 2 is a schematic diagram illustrating in further detail a second exemplary embodiment of the method described herein and a second exemplary embodiment of the laser component described herein. [Diagram 3]1 is a schematic diagram illustrating in further detail a third exemplary embodiment of the method described herein and a third exemplary embodiment of the laser component described herein. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0049] In the figures, elements having the same, similar or similar function are provided with the same reference symbols. The canvas drawings and the proportions of the elements shown in the drawings should be treated as not being to scale. Rather, individual elements may be depicted exaggeratedly larger in order to enhance visibility and / or comprehension.

[0050] A first exemplary embodiment of the method described herein will now be described in more detail according to the schematic cross-sectional view of FIG. 1A.

[0051] In the method, a semiconductor laser chip 1 is first provided. The semiconductor laser chip 1 is, for example, an edge-emitting or surface-emitting semiconductor laser chip. The semiconductor laser chip has a laser facet 1a through which laser radiation generated in the semiconductor laser chip 1 exits the semiconductor laser chip during operation.

[0052] A reflective layer 12 is formed on the laser facet 1a. The reflective layer 12 forms part of the resonator of the semiconductor laser chip 1. The reflective layer 12 comprises, for example, alternating layers of metal oxides and / or semiconductor oxides, in particular with different refractive indices.

[0053] For example, the outermost layer of the reflective layer may be formed of a material such as silicon dioxide.

[0054] Also provided is an optical element 2. The optical element 2 may be provided for beam shaping of the laser radiation, for example by refraction and / or diffraction. In the exemplary embodiment of Fig. 1A, the optical element 2 is, for example, made of glass.

[0055] The optical element 2 is arranged as close as possible to the laser facet 1a, the distance d between the laser facet and the optical element 2 being at most 10 μm, in particular at most 7 μm.

[0056] A laser 5 is also provided for generating laser radiation 7. The laser radiation 7 is, for example, focused via an optical system 6 onto the interface between the semiconductor laser chip 1 and the optical element 2, such that a weld joint 3 is formed in the first connection region 41 after the molten material has solidified.

[0057] The schematic diagram of Fig. 1B shows a front view through the optical element to a first connection area 41 between the optical element 2 and the semiconductor laser chip 1. As is evident from Fig. 1B, the weld joint 3 is formed along a weld seam 31 running as a serpentine curve in order to create a particularly large connection area 41 in terms of surface area. In the exemplary embodiment of Figs. 1A and 1B, the weld seam 31 extends above the active zone 11 arranged at the lower end of the laser facet 1a.

[0058] This results in a laser component having a semiconductor laser chip 1 with a laser facet 1a with an active zone 11. An optical element 2 is arranged downstream of the semiconductor laser chip 1 at the laser facet 1a, and the semiconductor laser chip and the optical element 2 are joined by a weld joint 3. The weld joint 3 is free of welding consumables.

[0059] The weld joint 3 provides direct physical contact between the semiconductor laser chip 1 and the optical element.

[0060] The weld joint 3 extends in a first connection region 41 between the optical element 2 and the semiconductor laser chip 1 and has a weld seam 31 comprising the materials of both components. Here, the semiconductor laser chip 1 is provided with a reflective layer 12 on the laser facet 1a, the material of which forms the weld joint 3 with the material of the optical element.

[0061] The laser component has no sealed housing and at most one unsealed housing 9 .

[0062] Further exemplary embodiments of the methods and laser components described herein are described in relation to the schematic diagrams of Figures 2A and 2B.

[0063] 1A and 1B, here the active zone 11 is surrounded laterally by at least one weld seam 31. This means that the active zone 11 is surrounded laterally, for example in the plane of the first connection region 41, by at least one weld seam 31.

[0064] 2A and 2B, the active zone 11 is surrounded by two weld seams 31 forming the weld joint 3. The weld seams 31 run concentrically. This allows a particularly mechanically stable connection to be formed between the optical element 2 and the semiconductor laser chip 1.

[0065] By surrounding the active zone 11 by the weld seam 31 the laser facets are well protected against contamination, especially in the active zone 11 .

[0066] A third exemplary embodiment of the method and laser component described herein is described with reference to the schematic diagram of Fig. 3. In this exemplary embodiment, the weld joint has a weld seam 31 that extends in a second joint area 42 between the optical element 2 and the carrier 8 and includes the materials of the optical element 2 and the carrier 8. The carrier 8 may have, for example, on its upper side facing the optical element 2, a layer made of glass or glass ceramic.

[0067] In this exemplary embodiment, a welded joint 3 may also be formed between the optical element 2 and the semiconductor laser chip 1, as described in the exemplary embodiment of Figures 1A, 1B, 2A and 2B. Furthermore, in this exemplary embodiment, the distance d between the optical element 2 and the semiconductor laser 12 may be selected to be slightly larger than in the exemplary embodiment in which the optical element and the semiconductor laser chip 1 are directly joined by a welded joint disposed therebetween. This allows for a larger tolerance when associating the optical element 2 with the semiconductor laser chip 1.

[0068] The close or direct arrangement of the optical element 2 against the laser facet 1a thus insulates the laser facet from the surrounding air, which may contain harmful molecules. This prevents the accumulation of foreign particles on the laser facet and makes hermetic sealing of the laser component unnecessary. This allows a particularly cost-effective production of laser components that are characterized by a high ageing stability.

[0069] The scope of the carrier is not limited by the description based on the exemplary embodiment, but the invention may include any combination of features of the invention, including combinations of features set forth in the claims, whether the combinations of features are explicitly set forth in the claims or disclosed by the description of the exemplary embodiment, and even features not set forth in the claims, even if the features are novel.

[0070] This patent application claims priority from German patent application No. 10 2022 103 260.4, the disclosure of which is incorporated herein by reference. [Explanation of symbols]

[0071] 1. Semiconductor laser chip 1a Laser Facet 11. Active Zone 12 Reflective layer 2. Optical elements 3 Welded joints 31 Welding seam 41 First Connection Area 42 Second Connection Area 5. Laser 6 Optical system 7. Laser Light 8. Career 9. Cabinet D Distance

Claims

1. a semiconductor laser chip (1) having a laser facet (1a) with an active zone (11); an optical element (2) arranged downstream of the semiconductor laser chip (1) on the laser facet (1a), the semiconductor laser chip (1) and the optical element (2) are joined together by a welded joint (3) without the use of welding consumables; The welded joint (3) comprises a weld seam (31). Laser parts.

2. The distance between the optical element (2) and the laser facet (1a) is at most 10 μm; 2. The laser component of claim 1.

3. the semiconductor laser chip (1) and the optical element (2) are in direct contact with each other at the laser facet (1a); 3. A laser component according to claim 1 or 2.

4. Further comprising a carrier (8), The semiconductor laser chip (1) and the optical element (2) are connected to each other via a carrier (8), and the welded joint (3) is disposed between the optical element (2) and the carrier (8). The laser component according to any one of claims 1 to 3.

5. the weld joint (3) extends to a second connection area (42) between the optical element (2) and the carrier (8) and comprises a weld seam (31) comprising material of the optical element (2) and the carrier (8).

5. A laser component according to claim 4.

6. The welded joint (3) is disposed between the semiconductor laser chip (1) and the optical element (2). A laser component according to any one of claims 1 to 5.

7. the weld seam (31) extends to a first connection area (41) between the optical element (2) and the semiconductor laser chip (1) and comprises material of the optical element (2) and the semiconductor laser chip (1). A laser component according to any one of claims 1 to 6.

8. the weld seam (31) laterally surrounds the active zone (11); 8. A laser component according to claim 7.

9. Does not have a sealed housing; A laser component according to any one of the preceding claims.

10. The semiconductor laser chip (1) comprises, on the laser facet (1a), a reflective layer (12) comprising a metal oxide and / or a semiconductor oxide, A laser component according to any one of the preceding claims.

11. 1. A method of manufacturing a laser component, comprising: Providing a semiconductor laser chip (1) having a laser facet (1a) with an active zone (11); Providing an optical element (2); Positioning said optical element (2) at said laser facet (1a); bonding the semiconductor laser chip (1) and the optical element (2) at connection areas (41, 42) by a welding process, the welding process is performed without the use of welding consumables; 13. The method of claim 12, wherein the step of joining the semiconductor laser chip (1) and the optical element (2) at the connection area (41, 42) by means of a welding process comprises creating a weld seam (31).

12. The welding process is performed by a laser beam (7) focused on the connection area (41, 42), The method of claim 11.

13. In said connection areas (41, 42) material is melted to form a welded joint (3) after solidification. The method of claim 12.

14. Producing a laser component according to any one of claims 1 to 10, The method according to any one of claims 11 to 13.

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