Method and apparatus for processing a substrate - Patents.com

Abstract

Provided herein are methods and apparatus for processing a first substrate and a second substrate. For example, a method for processing a substrate using extended spectroscopic ellipsometry (ESE) includes directing a beam from an extended spectroscopic ellipsometer toward a first surface of the first substrate and toward a second surface of a second substrate different from the first substrate, determining in situ ESE data from each of the first and second surfaces during processing of the first and second substrates, measuring phase and amplitude changes in the determined in situ ESE data, and simultaneously using complex dielectric function, optical conductivity, and electron correlation from the measured changes in phase and amplitude of the in situ ESE data to determine one or more parameters of the first surface of the first substrate and the second surface of the second substrate.

Description

[Technical field]

[0001]

[0001] Embodiments of the present disclosure generally relate to methods and apparatus for processing substrates. More particularly, embodiments of the present disclosure relate to surface / interface characterization of semiconductor substrate processes. [Background technology]

[0002]

[0002] The manufacture of a substrate (wafer) may include one or more processes. For example, the manufacture of a substrate may include using one or more deposition processes (e.g., physical vapor deposition (PVD), chemical vapor deposition (CVD), atomic layer deposition (ALD), etc.), one or more bonding processes, one or more cleaning processes, one or more etching processes (e.g., wet etching, dry etching, etc.), and one or more polishing processes (e.g., chemical mechanical polishing (CMP) or other suitable polishing processes). Conventional methods and apparatuses are configured for surface / interface characterization to detect the cleanliness of a target surface. However, such methods and apparatuses are typically configured to perform surface / interface characterization at the end (completion) of each process, which may be highly destructive to the target surface. Summary of the Invention

[0003]

[0003] Provided herein are methods and apparatus for processing a substrate. In some embodiments, the method for processing a substrate includes directing a beam from an extended spectroscopic ellipsometer toward a first surface of a first substrate and toward a second surface of a second substrate different from the first substrate, determining in-situ ESE data from each of the first and second surfaces during processing of the first and second substrates, measuring phase and amplitude changes in the determined in-situ ESE data, and simultaneously using a complex dielectric function, optical conductivity, and electron correlation from the measured changes in phase and amplitude of the in-situ ESE data to determine one or more parameters of the first surface of the first substrate and the second surface of the second substrate.

[0004] According to at least some embodiments, a non-transitory computer-readable storage medium has stored therein instructions that, when executed by a processor, perform a method for processing a substrate using extended spectroscopic ellipsometry (ESE), the method for processing a substrate includes directing a beam from an extended spectroscopic ellipsometer toward a first surface of a first substrate and toward a second surface of a second substrate different from the first substrate, determining in situ ESE data from each of the first and second surfaces during processing of the first and second substrates, measuring changes in phase and amplitude in the determined in situ ESE data, and simultaneously using a complex dielectric function, optical conductivity, and electron correlation from the measured changes in phase and amplitude of the in situ ESE data to determine one or more parameters of the first surface of the first substrate and the second surface of the second substrate.

[0005]

[0005] According to at least some embodiments, an apparatus for processing a substrate includes a processing platform for processing the substrate, and an extended spectroscopic ellipsometer operably connected to the processing platform, the extended spectroscopic ellipsometer configured to direct a beam from the extended spectroscopic ellipsometer toward a first surface of a first substrate and toward a second surface of a second substrate different from the first substrate, determine in situ ESE data from each of the first and second surfaces during processing of the first and second substrates, measure changes in phase and amplitude in the determined in situ ESE data, and determine one or more parameters of the first surface of the first substrate and the second surface of the second substrate using simultaneously a complex dielectric function, optical conductivity, and electron correlation from the measured changes in phase and amplitude of the in situ ESE data.

[0006]

[0006] Other and further embodiments of the present disclosure are described below.

[0007]

[0007] The embodiments of the present disclosure, briefly summarized above and described in more detail below, can be understood by reference to the exemplary embodiments of the present disclosure illustrated in the accompanying drawings. However, since the present disclosure is open to other equally effective embodiments, the accompanying drawings depict only typical embodiments of the present disclosure and therefore should not be considered as limiting the scope. [Brief description of the drawings]

[0008] [Figure 1] 1 is a flowchart of a method for processing a substrate in accordance with at least some embodiments of the present disclosure. [Diagram 2]

[0009] FIG. 1 is a diagram of an apparatus, according to at least some embodiments of the present disclosure. [Diagram 3]

[0010] 2 is a sequence diagram of the method of FIG. 1 in accordance with at least some embodiments of the present disclosure. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0009]

[0011] For ease of understanding, the same reference numbers have been used, where possible, to designate identical elements common to the figures. The figures are not drawn to scale and may be simplified for clarity. Elements and features of one embodiment may be beneficially incorporated in other embodiments without further recitation.

[0010]

[0012] Method and apparatus embodiments are provided herein. For example, the disclosed methods and apparatus are directed to surface / interface characterization of semiconductor substrate processes. For example, in at least some embodiments, the methods and apparatus described herein are configured to perform extended spectroscopic ellipsometry (ESE) in real time during one or more substrate fabrication processes, such as PVD, CVD, cleaning, wet / dry etching, polishing processes (e.g., chemical mechanical polishing processes), bonding (e.g., hybrid bonding), etc. For example, the methods and apparatus described herein may provide real-time measurements of surface / interface cleanliness using the complex dielectric function, optical conductivity, and electron correlation measured by ESE simultaneously. The complex dielectric function, optical conductivity, and electron correlation can be used to probe various surface conditions associated with hybrid bonds, such as the presence or absence of contaminants, contact angles of about 0-70°, bonding states such as -OH, -ON, and material compositions such as about 10% to about 30% SiCN. The methods and apparatus described herein provide that when an ESE is used to monitor one or more surfaces of interest in real time during one or more of the above-mentioned substrate manufacturing processes, as opposed to at the end of the substrate manufacturing process, damage to the surfaces of interest is significantly reduced, if not eliminated.

[0011]

[0013] FIG. 1 is a flowchart of a method 100 for processing a substrate, and FIG. 2 is a tool 200 (or apparatus) that can be used to perform the method 100, in accordance with at least some embodiments of the present disclosure.

[0012]

[0014] The method 100 may be performed in a tool 200 that includes any suitable processing chambers configured for one or more of physical vapor deposition (PVD), chemical vapor deposition (CVD), such as plasma enhanced CVD (PECVD), and / or atomic layer deposition (ALD), such as plasma enhanced ALD (PEALD) or thermal ALD (e.g., without plasma formation), a pre-clean chamber, a wet etch of a dry etch chamber, bonding (e.g., hybrid bonding or other bonding process), or a CMP chamber. An exemplary processing system that may be used to perform the inventive methods disclosed herein is commercially available from Applied Materials, Inc. of Santa Clara, Calif. Other processing chambers, including processing chambers available from other manufacturers, may also be suitably used in conjunction with the teachings presented herein.

[0013]

[0015] Tool 200 may be embodied in separate processing chambers that may be provided in a stand-alone configuration or as part of a cluster tool (such as the integrated tool described below with respect to FIG. 2). An example of an integrated tool is available from Applied Materials, Inc., Santa Clara, Calif. The methods described herein may be performed using other cluster tools having suitable associated processing chambers or in other suitable processing chambers. For example, in some embodiments, the methods of the present invention may be performed in an integrated tool such that there is limited or no vacuum / time interruption between processing steps. For example, reduced vacuum / time interruptions may limit or prevent contamination, oxidation, or surface termination changes of associated associated materials (such as oxides, nitrides, silicon carbonitride (SiCN), copper (Cu), etc.).

[0014]

[0016] The integrated tool includes a processing platform 201 (a vacuum-tight processing platform), a factory interface 204, and a controller 202. The processing platform 201 comprises multiple processing chambers, such as processing chambers 214A, 214B, 214C, 214D, operably connected to a transfer chamber 203 (a vacuum substrate transfer chamber). The factory interface 204 is operably connected to the transfer chamber 203 by one or more load lock chambers (two load lock chambers, such as load lock chambers 206A and 206B shown in FIG. 2).

[0015]

[0017] In some embodiments, the factory interface 204 comprises a docking station 207 and a factory interface robot 238 that facilitates the transfer of one or more semiconductor substrates (wafers or tape frames). The docking station 207 is configured to receive one or more front opening unified pods (FOUPs) or tape frame cassettes. In the embodiment of FIG. 2, four FOUPs are shown, such as FOUPs 205A, 205B, 205C, and 205D. The factory interface robot 238 is configured to transfer substrates from the factory interface 204 to the processing platform 201 through load lock chambers, such as load lock chambers 206A and 206B. Each of the load lock chambers 206A and 206B has a first port connected to the factory interface 204 and a second port connected to the transfer chamber 203. The chambers 206A and 206B are connected to a pressure control system (not shown) that pumps down and evacuates the load lock chambers 206A and 206B to facilitate passage of substrates between the vacuum environment of the transfer chamber 203 and the substantially ambient (e.g., atmospheric) environment of the factory interface 204. The transfer chamber 203 has a vacuum robot 242 disposed therein. The vacuum robot 242 can transfer substrates 221 between the load lock chambers 206A, 206B and the processing chambers 214A, 214B, 214C, 214D.

[0016]

[0018] In some embodiments, processing chambers 214A, 214B, 214C, and 214D are connected to the transfer chamber 203. Processing chambers 214A, 214B, 214C, and 214D include at least ALD chambers, CVD chambers, PVD chambers, e-beam deposition chambers, electroplating, electroless (EEP) deposition chambers, pre-clean chambers (e.g., spin clean and dry chambers), wet etch chambers, dry etch chambers, UV chambers, bonders (pick and flip processes), and / or other chambers suitable for performing methods described herein.

[0017]

[0019] In some embodiments, one or more optional service chambers (shown as 216A and 216B) may be connected to the transfer chamber 203. The service chambers 216A and 216B may be configured to perform other substrate processes such as degassing and / or annealing (e.g., furnace, microwave heating), bonding (pick-and-flip process), chemical mechanical polishing (CMP), wafer cleaving, etching, plasma dicing, orientation, substrate metrology, cool down, etc.

[0018]

[0020] In at least some embodiments, an extended spectroscopic ellipsometer 250 is operably connected to the processing platform 201. For example, the extended spectroscopic ellipsometer 250 can be coupled to one or more of the processing chambers 214A, 214B, 214C, and 214D, and / or one or both of the service chambers 216A and 216B. For illustrative purposes, the extended spectroscopic ellipsometer 250 is shown operably coupled to the processing chambers 214A and 214D, and to the chamber 216A. For example, in at least some embodiments, the swing arms (not shown) of the processing chambers 214A, 214B, 214C, and 214D, and / or one or both of the chambers 216A and 216B can be configured to support the extended spectroscopic ellipsometer 250. In at least some embodiments, the extended spectroscopic ellipsometer 250 can be coupled to the factory interface 204, for example, for metrology / inspection.

[0019]

[0021] Under the control of the controller 202, the extended spectroscopic ellipsometer 250 is configured to perform extended spectroscopic ellipsometry (ESE). For example, in at least some embodiments, the extended spectroscopic ellipsometer 250 is configured to direct a beam toward a surface of a substrate to determine in situ data during substrate processing (e.g., performing one or more of the processes described above). In at least some embodiments, the extended spectroscopic ellipsometer 250 is configured to measure changes in the determined in situ data and determine various aspects of the surface of the substrate using simultaneously the complex dielectric function, optical conductivity, and electron correlation measured from changes in phase and amplitude of the in situ extended spectroscopic ellipsometry (ESE) data (in situ ESE data), as described in more detail below.

[0020]

[0022] The controller 202 controls the operation of the tool 200 using direct control of the processing chambers 214A, 214B, 214C, and 214D, or alternatively, by controlling a computer (or controller) associated with the processing chambers 214A, 214B, 214C, and 214D and the tool 200. During operation, the controller 202 enables data collection and feedback from each chamber and system to optimize the performance of the tool 200. The controller 202 generally includes a central processing unit 230, a memory 234, and support circuits 232. The central processing unit 230 may be any form of general-purpose computer processor available in an industrial setting. The support circuits 232 are conventionally connected to the central processing unit 230 and may include cache, clock circuits, input / output subsystems, power supplies, etc. Software routines, such as the processing methods described above, may be stored in memory 234 (e.g., a non-transitory computer-readable storage medium having instructions stored thereon) and, when executed by central processing unit 230, transfer to controller 202 (a special-purpose computer). Software routines may also be stored and / or executed by a second controller (not shown) located remotely from tool 200.

[0021]

[0023] With continued reference to FIG. 1, method 100 uses ESE to characterize the surface / interface cleanliness (e.g., endpoint sensing) of one or more surfaces of a substrate. For example, as discussed above, the inventors have found that complex dielectric functions, photoconductivity, and electron correlation can be used to probe various surface conditions associated with hybrid bonding, such as the presence or absence of contaminants, contact angles from about 0 to about 70°, bonding states such as -OH, -ON, and material compositions such as about 10% to about 30% SiCN. The surface condition can be measured by a range of parameters, such as bond strength (e.g., about 0.5 to about 2 J / m 2This provides significant advantages in terms of device performance and yield because the results can be directly correlated to downstream reliability performance such as . For example, performance and yield can be identified early, before the substrate is completed as a device, as opposed to the traditional method of testing performance and yield after assembly (packaging). For example, the controller 202 uses the raw ellipsometry data (e.g., ψ (amplitude) and Δ (phase)) to extract the dielectric functions of the material (e.g., ε1 and ε2) and the following equations (1)-(3): ρ ≡ tan Ψ exp(iΔ) ≡ r p / r s .....,(1) ε1=n 2 -k 2 .....,(2) and ε2=2nk.....(3) For hybrid bonding, the dielectric surface properties can be an important indicator for achieving high bonding strength. In ellipsometry, the ratio of the amplitude (Ψ) and phase difference (Δ) is directly related to the complex dielectric function (ε = ε1 + iε2). This direct relationship is evident in Eq. (1), where the two ellipsometric parameters (Ψ, Δ) are directly related to the p-polarized reflectivity (r p ) and s-polarized reflectance (r s The reflectivity depends on the refractive index (n) and extinction coefficient (k) of the material, and the relationship between these two parameters and the complex dielectric function is shown in equations (2) and (3).

[0022]

[0024] Initially, one or more substrates are loaded into one or more of the four FOUPs 205A, 205B, 205C, and 205D. For example, in at least some embodiments, a top substrate 301 and a bottom substrate 303 may be loaded into FOUP 205A. The top substrate 301 and the bottom substrate 303 may be made of one or more suitable materials. For example, the top substrate 301 and the bottom substrate 303 may be made of Cu embedded in one of silicon carbonitride (SiCN) or silicon oxide (SiO2). For example, in at least some embodiments, the top substrate 301 may be a component tape frame wafer made from silicon carbonitride (SiCN) and the bottom substrate 303 may be made from silicon oxide (SiO2). One or more dies 305 (e.g., a plurality of dies 305) may be disposed on the top surface of the top substrate 301.

[0023]

[0025] Next, in at least some embodiments, an optional cleaning process may be performed on the top substrate 301 and the bottom substrate 303. For example, in at least some embodiments, the top substrate and the bottom substrate may be transferred from the FOUP 205A through one of the load lock chambers 206A and 206B to one of the service chambers 216A and 216B (e.g., service chamber 216A). In at least some embodiments, the method 100 includes a cleaning process (wet cleaning and spin drying) that includes performing a wet cleaning and spin drying process (see 300 in FIG. 3) on the top substrate 301 and the bottom substrate 303. The cleaning process shown at 300 may include using at least one of an acid, a base, a solvent, or deionized water. For example, if a thorough / rough cleaning of the substrate is required, in at least some embodiments, an acid, a base, and / or a solvent may be used.

[0024]

[0026] An optional degassing process (see 302 in FIG. 3) may then be performed on one or more of the substrates. For example, in at least some embodiments, the top substrate 301 and the bottom substrate 303 may be transferred from the service chamber 216A to the service chamber 216B. To reduce costs and increase throughput, multiple top and bottom substrates may be processed in bulk during the degassing process 302.

[0025]

[0027] The top substrate 301 and the bottom substrate 303 may then be transferred to the processing chamber 214A where one or more plasma and cleaning processes may be performed on the top substrate 301 and the bottom substrate 303. In at least some embodiments, the processing chamber 214A may be configured to perform one or more plasma and / or cleaning processes (see 304 in FIG. 3) for activating and / or cleaning (e.g., wet cleaning and spin drying) the top substrate 301 and the bottom substrate 303. The cleaning process shown at 304 may include using at least one of an acid, a base, a solvent, or deionized water. For example, if a gentle / mild cleaning of the substrate is required, deionized water (DI water) may be used in at least some embodiments.

[0026]

[0028] Next, at 102, the method 100 includes directing a beam from the extended spectroscopic ellipsometer toward a first surface of a first substrate and a second surface of a second substrate different from the first substrate. For example, at 102, under the control of the controller 202, the extended spectroscopic ellipsometer 250 is configured to direct a beam toward an upper surface of the top substrate 301 and an upper surface of the bottom substrate 303.

[0027]

[0029] Next, at 104, the method 100 includes determining in situ ESE data, e.g., the phase (Δ) and amplitude (Ψ) of the beam (or the reflected beam) from each of the first and second surfaces during processing of the first and second substrates. For example, in at least some embodiments, the extended spectroscopic ellipsometer 250 can direct the beam at one or more suitable angles to detect a particular surface condition. The beam can be directed at an angle of incidence (angle of incidence) of about 0 to about 80° relative to the upper surface of the top substrate 301 and the upper surface of the bottom substrate 303. For example, in at least some embodiments, the angle of incidence can be about 20° to about 80°. In at least some embodiments, the angle of incidence can be about 45° to about 50°. The photon energy of the beam can be about 0.6 eV to about 10 eV. For example, in at least some embodiments, the photon energy of the beam can be about 3.2 eV to about 6 eV, and in at least some embodiments, about 3.3 eV.

[0028]

[0030] Next, method 100 includes measuring a change in the determined in situ ESE data. For example, at 106, method 100 includes measuring a change in phase and amplitude of the determined in situ ESE data. For example, in at least some embodiments, at 106, controller 202 can measure a change in phase (Δ) and amplitude (Ψ) of the reflected beam. For example, under control of controller 202, controller 202 measures the phase and amplitude of the transmitted beam and measures the change in phase and amplitude of the reflected beam detected by extended spectroscopic ellipsometer 250.

[0029]

[0031] Next, at 108, the method includes determining one or more parameters of the first surface of the first substrate and the second surface of the second substrate from the changes in phase (Δ) and amplitude (Ψ) measured from the in situ ESE data using the complex dielectric function, optical conductivity, and electron correlation simultaneously. For example, in at least some embodiments, the controller 202 uses the complex dielectric function, optical conductivity, and / or electron correlation obtained from the changes in phase (Δ) and amplitude (Ψ) of the reflected beam to determine the presence or absence of contamination, hydrophilicity (contact angle), and various other surface conditions of the top surface of the top substrate 301 and the top surface of the bottom substrate 303. For example, electron correlation can be used to obtain important information about surfaces, interfaces, and / or defects, each of which has rich physical properties. For example, different surface treatments of the same dielectric will have different electron correlations, resulting in a unique spectrum of complex dielectric functions that can be easily correlated to downstream bonding performance. For example, the imaginary part of the complex dielectric function, ε2, is proportional to the optical absorptivity and optical conductivity of the material. Changes in the complex dielectric function, in which the real and imaginary parts are interdependent, can reflect differences in manufacturing conditions and / or material performance.

[0030]

[0032] If the controller 202 then determines that the surface condition of either the top surface of the top substrate 301 and the top surface of the bottom substrate 303 (which can be correlated to downstream bonding performance) is at an appropriate pre-defined figure-of-merit (e.g., value, etc.), the top substrate 301 and the bottom substrate can be transferred, for example, to one or more of the processing chambers 214B-214D and / or the service chambers 216A and 216B for further processing, as described in more detail below. Conversely, if the controller 202 determines that the surface condition on the top surface of the top substrate 301 and the top surface of the bottom substrate 303 has not reached an appropriate pre-defined figure-of-merit, extended processing (e.g., plasma and cleaning processing or another suitable process) can be performed on the top substrate 301 and the bottom substrate 303.

[0031]

[0033] For example, in at least some embodiments, the remaining contaminant layer may require additional processing, such as processing in a pre-cleaning chamber, to remove the contaminant, and the ESE can be used again to monitor the contaminant layer during the pre-cleaning process until the contaminant layer is completely removed from the top surface of the top substrate 301 and the top surface of the bottom substrate 303. In such an embodiment, the vacuum robot 242 can transfer the top substrate 301 and the bottom substrate 303 from the processing chamber 214A to the processing chamber 214D, for example, to perform a pre-cleaning process, such as to remove one or more contaminants as described above. Thus, once transferred to the processing chamber 214D, one or more pre-cleaning processes can be performed. For example, the pre-cleaning process can be any process suitable to facilitate removal of any material from the top surface of the top substrate 301 and the top surface of the bottom substrate 303, as described above. In at least some embodiments, the top substrate 301 and the bottom substrate 303 can be exposed to a fluorine-containing precursor and a hydrogen-containing precursor in a two-part dry chemical cleaning process. In some embodiments, fluorine-containing precursors may include nitrogen trifluoride (NF3), hydrogen fluoride (HF), diatomic fluorine (F2), monoatomic fluorine (F), fluorine-substituted hydrocarbons, combinations thereof, etc. In some embodiments, hydrogen-containing precursors may include atomic hydrogen (H), diatomic hydrogen (H2), ammonia (NH3), hydrocarbons, partially halogen-substituted hydrocarbons, combinations thereof, etc. In some embodiments, O2-based precursors may be used to remove organic contaminants and in combination with reducing (N2 / H2-based) precursors to remove Cu oxides that may have formed under previous O2 treatments.

[0032]

[0034] Continuing to refer to FIG. 3, as described above, if the controller 202 determines that the surface condition of either the top surface of the top substrate 301 or the top surface of the bottom substrate 303 is within an appropriate predetermined figure of merit, further processing of the top substrate 301 and the bottom substrate 303 may be performed.

[0033]

[0035] For example, in at least some embodiments, the method 100 may include performing an ultraviolet process to harden the first substrate after performing at least one of a plasma process or a cleaning process. In some embodiments, the ultraviolet process may also be performed before the plasma process or the cleaning process. For example, an ultraviolet process may be performed on the top substrate (see 306 in FIG. 3). The ultraviolet may be applied to the bottom surface of the top substrate, but in some embodiments, it may be applied to the top surface or both the top and bottom surfaces of the top substrate. In at least some embodiments, the ultraviolet process may also be used to harden the bottom substrate 303 (e.g., as well as the top substrate 301). The ultraviolet process facilitates bonding processes, e.g., removing the die from the top surface of the top substrate 301.

[0034]

[0036] Next, in at least some embodiments, the method 100 may include performing a bonding process after performing the UV process. For example, the bonding process may include picking up a die (e.g., die 305) from a first surface of a first substrate (e.g., a top surface of the top substrate 301) and placing the die on a second surface of a second substrate (e.g., a top surface of the bottom substrate 303). The bonding process may be performed as many times as the number of dies present on the top surface of the top substrate 301.

[0035]

[0037] Next, the method 100 may include performing an annealing process after performing the bonding process. For example, an annealing process may be performed to anneal the bottom substrate 303 (see 310 in FIG. 3) after all of the dies 305 are placed on the top surface of the bottom substrate. The annealing process facilitates fixing of the dies to the top surface of the bottom substrate 303. As mentioned above, multiple bottom substrates may be processed in bulk to reduce costs and increase throughput.

[0036]

[0038] Additionally, the controller 202 can use the extended spectroscopic ellipsometer 250 during any of the processes prior to and / or subsequent to 102-108. For example, the extended spectroscopic ellipsometer 250 can be used as described herein during a cleaning process, a degassing process, a bonding process, a UV process, and / or an annealing process.

[0037]

[0039] While the forgoing is directed to embodiments of the present disclosure, other and further embodiments of the present disclosure may be devised without departing from the basic scope thereof.

Claims

1. 1. A method for processing a first substrate and a second substrate using enhanced spectroscopic ellipsometry (ESE), comprising: Directing a beam from an extended spectroscopic ellipsometer toward a first surface of a first substrate and toward a second surface of a second substrate different from the first substrate; determining in situ ESE data from each of the first surface and the second surface during processing of the first substrate and the second substrate; Measuring phase and amplitude changes within the determined in situ ESE data; determining one or more parameters of the first surface of the first substrate and the second surface of the second substrate simultaneously using a complex dielectric function, optical conductivity, and electron correlation from the measured changes in phase and amplitude of the in situ ESE data; A method comprising:

2. The method of claim 1 , wherein the in situ ESE data comprises changes in phase and amplitude of a reflected beam.

3. 10. The method of claim 1, wherein determining one or more parameters of the first surface of the first substrate and the second surface of the second substrate comprises at least one of a level of contamination, a surface bonding condition, a contact angle, or a material composition.

4. 10. The method of claim 1 , wherein directing the beam comprises directing the beam toward the first surface of the first substrate and toward the second surface of the second substrate at an angle of incidence of about 20° to about 80°.

5. 10. The method of claim 1 , wherein directing the beam comprises directing the beam toward the first surface of the first substrate and toward the second surface of the second substrate at an angle of incidence of about 45° to about 50°.

6. The method of claim 1 , wherein the beam has a photon energy of about 0.6 eV to about 10 eV.

7. The method of claim 1 , wherein the beam has a photon energy of about 3.2 eV to about 6 eV.

8. The first substrate and the second substrate are made of silicon carbonitride (SiCN) or silicon oxide (SiO ２ 8. The method of claim 1 , further comprising embedding Cu in one of the first and second electrodes.

9. 10. The method of claim 1, wherein processing the first substrate and the second substrate comprises performing at least one of a plasma process or a cleaning process that is part of a hybrid bonding process.

10. 10. The method of claim 9, further comprising performing an ultraviolet process to harden the first substrate after performing the at least one of the plasma process or the cleaning process.

11. 11. The method of claim 10, further comprising performing a bonding process after performing the ultraviolet process, the bonding process comprising picking up a die from the first surface of the first substrate and placing the die on the second surface of the second substrate.

12. 12. The method of claim 1, further comprising performing an annealing process after performing the bonding process.

13. 1. A non-transitory computer readable storage medium having stored thereon instructions that, when executed by a processor, perform a method for processing a first substrate and a second substrate using enhanced spectroscopic ellipsometry (ESE), the method comprising: Directing a beam from an extended spectroscopic ellipsometer toward a first surface of a first substrate and toward a second surface of a second substrate different from the first substrate; determining in situ ESE data from each of the first surface and the second surface during processing of the first substrate and the second substrate; Measuring phase and amplitude changes within the determined in situ ESE data; determining one or more parameters of the first surface of the first substrate and the second surface of the second substrate simultaneously using a complex dielectric function, optical conductivity, and electron correlation from the measured changes in phase and amplitude of the in situ ESE data; 1. A non-transitory computer-readable storage medium comprising:

14. 14. The non-transitory computer-readable storage medium of claim 13, wherein the in situ ESE data comprises changes in phase and amplitude of a reflected beam.

15. 14. The non-transitory computer-readable storage medium of claim 13, wherein determining the one or more parameters of the first surface of the first substrate and the second surface of the second substrate comprises at least one of a level of contamination, a surface bonding condition, a contact angle, or a material composition.

16. 14. The non-transitory computer-readable storage medium of claim 13, wherein directing the beam comprises directing the beam toward the first surface of the first substrate and toward the second surface of the second substrate at an angle of incidence of about 20° to about 80°.

17. 14. The non-transitory computer-readable storage medium of claim 13, wherein directing the beam comprises directing the beam toward the first surface of the first substrate and toward the second surface of the second substrate at an angle of incidence of about 45° to about 50°.

18. 14. The non-transitory computer readable storage medium of claim 13, wherein the beam has a photon energy of about 0.6 eV to about 10 eV.

19. 19. The non-transitory computer readable storage medium of claim 13, wherein the beam has a photon energy of about 3.2 eV to about 6 eV.

20. 1. An apparatus for processing a first substrate and a second substrate, comprising: a processing platform for processing a plurality of substrates; an extended spectroscopic ellipsometer (ESE) operably connected to the processing platform, Directing a beam from an extended spectroscopic ellipsometer toward a first surface of a first substrate and toward a second surface of a second substrate different from the first substrate; determining in situ ESE data from each of the first surface and the second surface during processing of the first substrate and the second substrate; Measuring phase and amplitude changes within the determined in situ ESE data; determining one or more parameters of the first surface of the first substrate and the second surface of the second substrate simultaneously using a complex dielectric function, optical conductivity, and electron correlation from the measured changes in phase and amplitude of the in situ ESE data; and an ESE configured to: An apparatus comprising:

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