Electrostatic Discharge Protection System for Microdevices

Abstract

The present disclosure discloses an electrostatic discharge (ESD) protection system for a micro device. The ESD protection system includes a pixel driving circuit electrically connected to at least one micro LED pixel for controlling the micro LED pixel to be turned on or off, and a first ESD protection unit configured in an external circuit outside the pixel driving circuit. The first ESD protection unit includes at least one unidirectional transient voltage suppressor. A cathode of the unidirectional transient voltage suppressor is connected to a first level voltage (Vdd), and an anode of the unidirectional transient voltage suppressor is connected to a second level voltage (Vcom). The micro LED pixel is connected to the second level voltage (Vcom). The present disclosure can protect the micro LED pixel from damage caused by electrostatic discharge. Various embodiments include an ESD protection system for a display panel with a micro LED pixel array.

Description

[Technical field]

[0001] Technical Field The present disclosure relates generally to display devices and techniques, and more specifically to electrostatic discharge protection systems for microdevices. [Background technology]

[0002] background

[0002] Display technology is becoming increasingly important in today's commercial electronic devices. These display panels are widely used in stationary large screens such as liquid crystal display televisions (LCD TVs) and organic light emitting diode televisions (OLED TVs), as well as in portable electronic devices such as laptops, smartphones, tablets, and wearable electronic devices.

[0003]

[0003] Electrostatic discharge (ESD) is one of the most common threats to the reliability of electronic components. An ESD-related event occurs when a finite amount of charge is transferred from one object to another, such as from a human body to a micro device. This process leads to a very large current flowing through the micro device in a very short time. In fact, more than 35% of chip damage can be attributed to an ESD-related event. Common failures due to ESD include contact damage, current leakage, short circuits, gate oxide breakdown, and burnout. ESD failures are either unpredictable or not easy to diagnose after failures occur.

[0004]

[0004] Furthermore, designing on-chip ESD structures to protect integrated circuits from ESD stress is a high priority task in the semiconductor industry. With the continuous advances in metal-oxide semiconductor and other processing technologies, ESD-induced failures become more and more prominent. In fact, many semiconductor companies around the world are struggling to meet the increasingly stringent ESD protection requirements for various electronics applications, and it is certain that the availability of effective and robust ESD protection solutions will become an important and essential element for the prosperity and commercialization of the electronics industry.

[0005]

[0005] In addition, micro light emitting diode (LED) panels have been widely researched worldwide. However, micro LEDs lack ESD protection, which may lead to damage to the micro LED panels and limit their implementation and reliability. Summary of the Invention [Means for solving the problem]

[0006] overview

[0006] There is a need for improved display designs that help to ameliorate and address the shortcomings of conventional display systems, such as those discussed above. In particular, there is a need for display panels with improved stability and reliability that have better images.

[0007]

[0007] In some embodiments, an integrated circuit (IC) chip requires protection against ESD at all pins of the packaged device. The ESD clamp is ideally in a high impedance state with a tolerable capacitive load and is triggered only when an ESD pulse is detected, thereby protecting the input / output (I / O) circuitry. When an ESD pulse occurs on an IC pad, the protection device clamps most of the ESD current energy to the ground bus. The clamp device needs to be fully compatible with the I / O function.

[0008]

[0008] Various embodiments include a display panel with an integrated micro LED array. A display panel typically includes an array of pixel light sources (e.g., LEDs, OLEDs) electrically coupled to corresponding pixel drive circuits (e.g., FETs). The micro LED panel includes an IC backplane and a micro LED array electrically formed on the IC backplane.

[0009]

[0009] In some embodiments, the present disclosure provides an ESD protection system for micro devices, especially for micro LED panels, to solve the problem that micro LED panels are always damaged by external electrostatic discharge.

[0010]

[0010] To achieve the above objectives, some exemplary embodiments of the present disclosure provide an electrostatic discharge (ESD) protection system for a micro device, the system including: a pixel driving circuit electrically connected to at least one micro LED pixel for controlling the on or off of the micro LED pixel, the pixel driving circuit being formed on a semiconductor substrate; and a first ESD protection unit formed in an external circuit outside the semiconductor substrate.

[0011]

[0011] In some exemplary embodiments or any combination of exemplary embodiments of the ESD protection system for a micro device, a first end of the first ESD protection unit is connected to a first level voltage (Vdd), a second end of the first ESD protection unit is connected to a second level voltage (Vcom), and the micro LED pixel is connected to the second level voltage (Vcom).

[0012] In some exemplary embodiments or any combination of exemplary embodiments of the ESD protection system for a micro device, the cathode of the micro LED pixel is connected to a second level voltage (Vcom).

[0013]

[0013] In some exemplary embodiments or any combination of exemplary embodiments of the ESD protection system for a micro device, the system further includes one or more pad units, each of the pad units including a first pad and a second pad electrically connected to the first pad, a first pad unit of the multiple pad units connected to a second level voltage (Vcom) and a second end of the first ESD protection unit, and a second pad unit of the multiple pad units connected to the first voltage (Vdd) and a first end of the first ESD protection unit.

[0014]

[0014] In some exemplary embodiments or any combination of exemplary embodiments of the micro device ESD protection system, the pixel driving circuit is in an integrated circuit (IC) substrate, a first pad of each of the pad units is in the IC substrate, and a second pad of each of the pad units is in an external circuit.

[0015] In some exemplary embodiments or any combination of exemplary embodiments of the ESD protection system for a micro device, the external circuitry is in a flexible printed circuit board.

[0016] In some exemplary embodiments or any combination of exemplary embodiments of the ESD protection system for a micro device, the first level of voltage (Vdd) is higher than the second level of voltage (Vcom).

[0017]

[0017] In some exemplary embodiments or any combination of exemplary embodiments of the ESD protection system for a micro device, the first level voltage (Vdd) is a positive voltage and the second level voltage (Vcom) is a negative voltage.

[0018]

[0018] In some exemplary embodiments or any combination of exemplary embodiments of the micro device ESD protection system, at least one micro LED pixel is a micro LED pixel array, and a pixel drive circuit controls the on or off of each micro LED pixel in the micro LED pixel array.

[0019] In some exemplary embodiments or any combination of exemplary embodiments of the ESD protection system for a micro device, the micropixel driving circuit is connected to a first level voltage (Vdd) and to the microLED pixel.

[0020]

[0020] In some exemplary embodiments or any combination of exemplary embodiments of the ESD protection system for a micro device, the system further includes a second ESD protection unit electrically connected to a third level voltage (Vss) and the first level voltage (Vdd).

[0021] In some exemplary embodiments or any combination of exemplary embodiments of the ESD protection system for a micro device, the second ESD protection unit is a power rail ESD clamp.

[0022]

[0022] In some exemplary embodiments or any combination of exemplary embodiments of the ESD protection system of the micro device, the second ESD protection unit includes a plurality of second ESD sub-clamps, a first end of each of the second ESD sub-clamps is connected to a third level voltage (Vss), a second end of each of the second ESD sub-clamps is connected to a first level voltage (Vdd), and the second ESD sub-clamps are connected in parallel with each other.

[0023]

[0023] In some exemplary embodiments or any combination of exemplary embodiments of the ESD protection system for a micro device, the first level voltage (Vdd) is higher than the second level voltage (Vcom), and the third level voltage (Vss) is higher than the second level voltage (Vcom).

[0024]

[0024] In some exemplary embodiments or any combination of exemplary embodiments of the micro device ESD protection system, the second level voltage (Vcom) is a negative voltage, the first level voltage (Vdd) is a positive voltage, and the third level voltage (Vss) is zero.

[0025]

[0025] In some exemplary embodiments or any combination of exemplary embodiments of the ESD protection system for a micro device, the micro device is selected from a micro inorganic LED device or a micro organic LED device, and the micro LED pixel is selected from an inorganic micro LED or an organic micro LED.

[0026]

[0026] In some exemplary embodiments or any combination of exemplary embodiments of the ESD protection system for a micro device, the system further includes a third ESD protection unit, a first end of the third ESD protection unit is connected to a first level voltage (Vdd) and a second end of the third ESD protection unit is connected to a fourth level voltage (Vss).

[0027] In some exemplary embodiments or any combination of exemplary embodiments of the ESD protection system for a micro device, the third ESD protection unit is connected to an input / output (IO) circuit.

[0028]

[0028] In some exemplary embodiments or any combination of exemplary embodiments of the ESD protection system of the micro device, the third ESD protection unit includes at least two third ESD sub-clamps, which are connected in series with each other.

[0029]

[0029] In some exemplary embodiments or any combination of exemplary embodiments of the micro device ESD protection system, a first end of the micro pixel driving circuit is connected to a fourth level voltage (Vdd'') and a second end of the micro pixel driving circuit is connected to the micro LED pixel.

[0030]

[0030] In some exemplary embodiments or any combination of exemplary embodiments of the ESD protection system for a micro device, the system further includes a fourth ESD protection unit, a first end of the fourth ESD protection unit is connected to a fourth level voltage (Vdd'') and a second end of the fourth ESD protection unit is connected to a third level voltage (Vss).

[0031] In some exemplary embodiments or any combination of exemplary embodiments of the ESD protection system for a micro device, the third level voltage (Vss) is lower than the fourth level voltage (Vdd'').

[0032] In some exemplary embodiments or any combination of exemplary embodiments of the ESD protection system for a micro device, the pixel drive circuit includes at least one switch.

[0033] In some exemplary embodiments or any combination of exemplary embodiments of the ESD protection system for a micro device, the first ESD protection unit includes at least one unidirectional transient voltage suppressor.

[0034]

[0034] In some exemplary embodiments or any combination of exemplary embodiments of the ESD protection system for a micro device, the cathode of the unidirectional transient voltage suppressor is connected to a first level voltage (Vdd) and the anode of the unidirectional transient voltage suppressor is connected to a second level voltage (Vcom).

[0035]

[0035] In some exemplary embodiments or any combination of exemplary embodiments of the ESD protection system for a micro device, the system further includes one or more pad units, each of the pad units including a first pad and a second pad electrically connected to the first pad, a first pad unit of the multiple pad units connected to a second level voltage (Vcom) and an anode of the unidirectional transient voltage suppressor, and a second pad unit of the multiple pad units connected to the first voltage (Vdd) and a cathode of the unidirectional transient voltage suppressor.

[0036] In some exemplary embodiments or any combination of exemplary embodiments of the ESD protection system for a micro device, the first ESD protection unit includes at least one bidirectional transient voltage suppressor.

[0037]

[0037] Some exemplary embodiments of the present disclosure provide an electrostatic discharge (ESD) protection system for a micro device, the system including: a pixel driving circuit electrically connected to at least one micro LED pixel for controlling the on or off of the micro LED pixel, the pixel driving circuit being formed in a semiconductor substrate; and a first ESD protection unit formed in an external circuit outside the semiconductor substrate, a first end of the first ESD protection unit being connected to a third level voltage (Vss), a second end of the first ESD protection unit being connected to a second level voltage (Vcom), and the micro LED pixel being connected to the second level voltage (Vcom).

[0038]

[0038] In some exemplary embodiments or any combination of exemplary embodiments of the ESD protection system for a micro device, the cathode of the micro LED pixel is connected to a second level voltage (Vcom).

[0039]

[0039] In some exemplary embodiments or any combination of exemplary embodiments of the ESD protection system for a micro device, the system further includes one or more pad units, each of the pad units including a first pad and a second pad electrically connected to the first pad, a first pad unit of the multiple pad units being connected to a third level voltage (Vss) and a first end of the first ESD protection unit, and a second pad unit of the multiple pad units being connected to a second level voltage (Vcom) and a second end of the first ESD protection unit.

[0040]

[0040] In some exemplary embodiments or any combination of exemplary embodiments of the micro device ESD protection system, the pixel driving circuit is in an integrated circuit (IC) substrate, a first pad of each of the pad units is in the IC substrate, and a second pad of each of the pad units is in an external circuit.

[0041] In some exemplary embodiments or any combination of exemplary embodiments of the ESD protection system for a micro device, the external circuitry is in a flexible printed circuit board.

[0042] In some exemplary embodiments or any combination of exemplary embodiments of the ESD protection system for a micro device, the third level voltage (Vss) is higher than the second level voltage (Vcom).

[0043] In some exemplary embodiments or any combination of exemplary embodiments of the ESD protection system for a micro device, the second level voltage (Vcom) is a negative voltage and the third level voltage (Vss) is zero.

[0044]

[0044] In some exemplary embodiments or any combination of exemplary embodiments of the micro device ESD protection system, at least one micro LED pixel is a micro LED pixel array, and a pixel drive circuit controls the on or off of each of the micro LED pixels in the micro LED pixel array.

[0045]

[0045] In some exemplary embodiments or any combination of exemplary embodiments of the ESD protection system for a micro device, the first ESD protection unit includes at least two unidirectional transient voltage suppressors, each of the unidirectional transient voltage suppressors being separately connected to each of the micro LED pixels.

[0046] In some exemplary embodiments or any combination of exemplary embodiments of the ESD protection system for a micro device, the micro pixel drive circuit is connected to a first level voltage (Vdd) and to the micro LED pixel.

[0047]

[0047] In some exemplary embodiments or any combination of exemplary embodiments of the ESD protection system for a micro device, the system further includes a second ESD protection unit electrically connected to a third level voltage (Vss) and the first level voltage (Vdd).

[0048] In some exemplary embodiments or any combination of exemplary embodiments of the ESD protection system for a micro device, the second ESD protection unit is a power rail ESD clamp.

[0049]

[0049] In some exemplary embodiments or any combination of exemplary embodiments of the ESD protection system of the micro device, the second ESD protection unit includes a plurality of second ESD sub-clamps, a first end of each of the second ESD sub-clamps is connected to a third level voltage (Vss), a second end of each of the second ESD sub-clamps is connected to a first level voltage (Vdd), and the second ESD sub-clamps are connected in parallel with each other.

[0050]

[0050] In some exemplary embodiments or any combination of exemplary embodiments of the ESD protection system for a micro device, the first level voltage (Vdd) is higher than the second level voltage (Vcom), the third level voltage (Vss) is higher than the second level voltage (Vcom), and the first level voltage (Vdd) is higher than the third level voltage (Vss).

[0051]

[0051] In some exemplary embodiments or any combination of exemplary embodiments of the micro device ESD protection system, the second level voltage (Vcom) is a negative voltage, the first level voltage (Vdd) is a positive voltage, and the third level voltage (Vss) is zero.

[0052]

[0052] In some exemplary embodiments or any combination of exemplary embodiments of the ESD protection system of a micro device, the micro device is selected from a micro inorganic LED device or a micro organic LED device, and the micro LED pixel is selected from an inorganic micro LED or an organic micro LED.

[0053]

[0053] In some exemplary embodiments or any combination of exemplary embodiments of the ESD protection system for a micro device, the system further includes a third ESD protection unit, a first end of the third ESD protection unit is connected to a first level voltage (Vdd) and a second other end of the third ESD protection unit is connected to a third level voltage (Vss).

[0054] In some exemplary embodiments or any combination of exemplary embodiments of the ESD protection system for a micro device, the third ESD protection unit is connected to the IO circuitry.

[0055]

[0055] In some exemplary embodiments or any combination of exemplary embodiments of the ESD protection system of the micro device, the third ESD protection unit includes at least two third ESD sub-clamps, which are connected in series with each other.

[0056]

[0056] In some exemplary embodiments or any combination of exemplary embodiments of the micro device ESD protection system, a first end of the micropixel driving circuit is connected to a fourth level voltage (Vdd'') and a second end of the micropixel driving circuit is connected to the microLED pixel.

[0057]

[0057] In some exemplary embodiments or any combination of exemplary embodiments of the ESD protection system for a micro device, the system further includes a fourth ESD protection unit, a first end of the fourth ESD protection unit is connected to a fourth level voltage (Vdd'') and a second end of the fourth ESD protection unit is connected to a third level voltage (Vss).

[0058] In some exemplary embodiments or any combination of exemplary embodiments of the ESD protection system for a micro device, the third level voltage (Vss) is lower than the fourth level voltage (Vdd'').

[0059] In some exemplary embodiments or any combination of exemplary embodiments of the ESD protection system for a micro device, the pixel drive circuit includes at least one switch.

[0060] In some exemplary embodiments or any combination of exemplary embodiments of the ESD protection system for a micro device, the first ESD protection unit includes at least one unidirectional transient voltage suppressor.

[0061]

[0061] In some exemplary embodiments or any combination of exemplary embodiments of the ESD protection system for a micro device, the cathode of the unidirectional transient voltage suppressor is connected to a third level voltage (Vss) and the anode of the unidirectional transient voltage suppressor is connected to a second level voltage (Vcom).

[0062]

[0062] In some exemplary embodiments or any combination of exemplary embodiments of the ESD protection system for a micro device, the system further includes one or more pad units, each of the pad units including a first pad and a second pad electrically connected to the first pad, a first pad unit of the multiple pad units connected to a third level voltage (Vss) and a cathode of the unidirectional transient voltage suppressor, and a second pad unit of the multiple pad units connected to a second level voltage (Vcom) and an anode of the unidirectional transient voltage suppressor.

[0063] In some exemplary embodiments or any combination of exemplary embodiments of the ESD protection system for a micro device, the first ESD protection unit includes at least one bidirectional transient voltage suppressor.

[0064]

[0064] Some example embodiments of the present disclosure provide an electrostatic discharge (ESD) protection system for a micro device, the system including: a pixel driving circuit electrically connected to at least one micro LED pixel for controlling the on or off of the micro LED pixel, the pixel driving circuit formed in a semiconductor substrate; and a first ESD protection unit formed in an external circuit outside the semiconductor substrate, the first ESD protection unit including at least one first ESD protection element and a second ESD protection element, a first end of the first ESD protection element connected to a first level voltage (Vdd), a second end of the first ESD protection element connected to a second level voltage (Vcom), a first end of the second ESD protection element connected to a third level voltage (Vss), a second end of the second ESD protection element connected to the second level voltage (Vcom), and the micro LED pixel connected to the second level voltage (Vcom).

[0065]

[0065] In some exemplary embodiments or any combination of exemplary embodiments of the ESD protection system for a micro device, the cathode of the micro LED pixel is connected to a second level voltage (Vcom).

[0066]

[0066] In some exemplary embodiments or any combination of exemplary embodiments of the ESD protection system for a micro device, the system further includes one or more pad units, each of the pad units including a first pad and a second pad electrically connected to the first pad, the pad units including a first pad unit, a second pad unit, and a third pad unit, the first pad unit connected to a third voltage (Vss) and a first end of the second ESD protection element, the second pad unit connected to a second level voltage (Vcom) and a second end of the second ESD protection element, the second pad unit further connected to the second end of the first ESD protection element, and the third pad unit further connected to the first voltage (Vdd) and the first end of the first ESD protection element.

[0067]

[0067] In some exemplary embodiments or any combination of exemplary embodiments of the micro device ESD protection system, the pixel driving circuit is in an IC substrate, a first pad of each of the pad units is in the IC substrate, and a second pad of each of the pad units is in an external circuit.

[0068] In some exemplary embodiments or any combination of exemplary embodiments of the ESD protection system for a micro device, the external circuitry is in a flexible printed circuit board.

[0069]

[0069] In some exemplary embodiments or any combination of exemplary embodiments of the ESD protection system for a micro device, the first level voltage (Vdd) is higher than the second level voltage (Vcom), the third level voltage (Vss) is higher than the second level voltage (Vcom), and the first level voltage (Vdd) is higher than the third level voltage (Vss).

[0070]

[0070] In some exemplary embodiments or any combination of exemplary embodiments of the micro device ESD protection system, the second level voltage (Vcom) is a negative voltage, the first level voltage (Vdd) is a positive voltage, and the third level voltage (Vss) is zero.

[0071]

[0071] In some exemplary embodiments or any combination of exemplary embodiments of the ESD protection system for a micro device, at least one micro LED pixel is a micro LED pixel array, and a pixel drive circuit controls the on or off of each micro LED pixel in the micro LED pixel array.

[0072] In some exemplary embodiments or any combination of exemplary embodiments of the ESD protection system for a micro device, the micropixel driving circuit is connected to a first level voltage (Vdd) and to the microLED pixel.

[0073]

[0073] In some exemplary embodiments or any combination of exemplary embodiments of the ESD protection system for a micro device, the system further includes a second ESD protection unit electrically connected to a third level voltage (Vss) and the first level voltage (Vdd).

[0074] In some exemplary embodiments or any combination of exemplary embodiments of the ESD protection system for a micro device, the second ESD protection unit is a power rail ESD clamp.

[0075]

[0075] In some exemplary embodiments or any combination of exemplary embodiments of the ESD protection system of the micro device, the second ESD protection unit includes a plurality of second ESD sub-clamps, a first end of each of the second ESD sub-clamps is connected to a third level voltage (Vss) and a second end of each of the second ESD sub-clamps is connected to a first level voltage (Vdd), and the second ESD sub-clamps are connected in parallel with each other.

[0076]

[0076] In some exemplary embodiments or any combination of exemplary embodiments of the ESD protection system of a micro device, the micro device is selected from a micro inorganic LED device or a micro organic LED device, and the micro LED pixel is selected from an inorganic micro LED or an organic micro LED.

[0077]

[0077] In some exemplary embodiments or any combination of exemplary embodiments of the ESD protection system for a micro device, the system further includes a third ESD protection unit, a first end of the third ESD protection unit is connected to a first level voltage (Vdd) and a second end of the third ESD protection unit is connected to a fourth level voltage (Vss).

[0078] In some exemplary embodiments or any combination of exemplary embodiments of the ESD protection system for a micro device, the third ESD protection unit is connected to the IO circuitry.

[0079]

[0079] In some exemplary embodiments or any combination of exemplary embodiments of the ESD protection system of the micro device, the third ESD protection unit includes at least two third ESD sub-clamps, which are connected in series with each other.

[0080]

[0080] In some exemplary embodiments or any combination of exemplary embodiments of the micro device ESD protection system, a first end of the micro pixel driving circuit is connected to a fourth level voltage (Vdd'') and a second end of the micro pixel driving circuit is connected to the micro LED pixel.

[0081]

[0081] In some exemplary embodiments or any combination of exemplary embodiments of the ESD protection system for a micro device, the system further includes a fourth ESD protection unit, a first end of the fourth ESD protection unit is connected to a fourth level voltage (Vdd'') and a second end of the fourth ESD protection unit is connected to a third level voltage (Vss).

[0082] In some exemplary embodiments or any combination of exemplary embodiments of the ESD protection system for a micro device, the third level voltage (Vss) is lower than the fourth level voltage (Vdd'').

[0083] In some exemplary embodiments or any combination of exemplary embodiments of the ESD protection system for a micro device, the pixel drive circuit includes at least one switch.

[0084]

[0084] In some exemplary embodiments or any combination of exemplary embodiments of the ESD protection system of the micro device, the first ESD protection unit includes at least one first unidirectional transient voltage suppressor and at least one second unidirectional transient voltage suppressor, wherein the cathode of the first unidirectional transient voltage suppressor is connected to a first level voltage (Vdd), the anode of the first unidirectional transient voltage suppressor is connected to a second level voltage (Vcom), the cathode of the second unidirectional transient voltage suppressor is connected to a third level voltage (Vss), and the anode of the second unidirectional transient voltage suppressor is connected to the second level voltage (Vcom).

[0085]

[0085] In some exemplary embodiments or any combination of exemplary embodiments of the ESD protection system for a micro device, the system further includes one or more pad units, each of the pad units including a first pad and a second pad electrically connected to the first pad, the pad units including a first pad unit, a second pad unit, and a third pad unit, the first pad unit connected to a third voltage (Vss) and a cathode of the second unidirectional transient voltage suppressor, the second pad unit connected to a second level voltage (Vcom) and an anode of the second unidirectional transient voltage suppressor, the second pad unit further connected to the anode of the first unidirectional transient voltage suppressor, and the third pad unit further connected to the first voltage (Vdd) and the cathode of the first unidirectional transient voltage suppressor.

[0086]

[0086] In some exemplary embodiments or any combination of exemplary embodiments of the ESD protection system of the micro device, the first ESD protection unit includes at least one first bidirectional transient voltage suppressor and a second bidirectional transient voltage suppressor.

[0087]

[0087] The display device and system designs disclosed herein provide reduced ESD damage, thereby improving the luminous efficiency and overall performance of the display system. Thus, implementing a display system with a microlens array can better meet the display requirements of augmented reality (AR) and virtual reality (VR), head-up displays (HUD), mobile device displays, wearable device displays, high-resolution projectors, and automotive displays compared to using traditional displays.

[0088]

[0088] It should be noted that the various embodiments described above can be combined with any other embodiment described herein. The features and advantages described herein are not all-inclusive, and many additional features and advantages will be apparent to those skilled in the art, particularly when considering the drawings, the specification, and the claims. Furthermore, it should be noted that the language used herein has been selected primarily for ease of reading and educational purposes, and may not have been selected to fully describe or define the scope of the subject matter of the present invention.

[0089] BRIEF DESCRIPTION OF THE DRAWINGS

[0089] In order to allow the present disclosure to be understood in more detail, a more specific description may be given by referring to the features of various embodiments, some of which are illustrated in the accompanying drawings. However, the accompanying drawings are merely illustrative of the relevant features of the present disclosure and therefore should not be considered as limiting, since the description may admit of other advantageous features.

[0090]

[0090] For convenience, "up" is used to mean away from the substrate of the light-emitting structure and "down" means toward the substrate, and other directional terms such as top, bottom, above, below, underneath, directly below, etc. should be interpreted accordingly. [Brief description of the drawings]

[0091] [Figure 1] FIG. 1 shows a schematic block diagram of an electrostatic discharge (ESD) protection system for a microdisplay according to some embodiments of the present disclosure, such as the first embodiment. [Diagram 2]

[0092] 1 shows a circuit diagram of an ESD protection system for a micro-display according to some embodiments of the present disclosure, such as the first embodiment. [Diagram 3]

[0093] 1 shows a circuit diagram of an ESD system according to some embodiments of the present disclosure, such as the first embodiment. [Figure 4]

[0094] 1 shows a schematic block diagram of an ESD system according to some embodiments of the present disclosure, such as the second embodiment. [Diagram 5]

[0095] 1 shows a circuit diagram of an ESD protection system according to some embodiments of the present disclosure, such as the second embodiment. [Figure 6]

[0096] 1 shows a circuit diagram of an ESD protection system according to some embodiments of the present disclosure, such as the second embodiment. [Figure 7]

[0097] 1 shows a schematic block diagram of an ESD protection system according to some embodiments of the present disclosure, such as the third embodiment. [Figure 8]

[0098] 1 shows a circuit diagram of an ESD protection system according to some embodiments of the present disclosure, such as the third embodiment. [Figure 9]

[0099] 1 shows a circuit diagram of an ESD system according to some embodiments of the present disclosure, such as the third embodiment. [Figure 10]

[0100] 1 shows a circuit diagram of an ESD protection system according to some embodiments of the present disclosure, such as the fourth embodiment. [Figure 11]

[0101] 1 shows a circuit diagram of an ESD system according to some embodiments of the present disclosure, such as the fourth embodiment. [Figure 12]

[0102] 1 shows a circuit diagram of an ESD protection system according to some embodiments of the present disclosure, such as the fifth embodiment. [Figure 13]

[0103] 1 shows a circuit diagram of an ESD system according to some embodiments of the present disclosure, such as the fifth embodiment. [Figure 14]

[0104] 1 shows a circuit diagram of an ESD protection system according to some embodiments of the present disclosure, such as the sixth embodiment. [Figure 15]

[0105] 1 shows a circuit diagram of an ESD system according to some embodiments of the present disclosure, such as the sixth embodiment. [Figure 16]

[0106] 1 illustrates a circuit diagram of an ESD protection unit according to some embodiments of the present disclosure. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0092]

[0107] According to common practice, the various features illustrated in the drawings may not be drawn to scale. Thus, dimensions of the various features may be arbitrarily expanded or reduced for clarity. Moreover, some drawings may not show all components of a given system, method, or device. Finally, like reference numbers may be used throughout the specification and drawings to denote like features.

[0093] Detailed Description

[0108] Numerous details have been described herein to provide a thorough understanding of the exemplary embodiments illustrated in the accompanying drawings. However, some embodiments may be practiced without many of those specific details, and the claims are limited only by the features and aspects specifically recited in the claims. Moreover, well-known processes, components, and materials have not been described in exhaustive detail so as not to unnecessarily obscure aspects related to the embodiments described herein.

[0094]

[0109] As described above, in order to solve the problems in the related art, some embodiments of the present disclosure provide an ESD protection system for a micro device. The ESD protection system for a micro device includes a pixel driving circuit electrically connected to at least one micro LED pixel for controlling the micro LED pixel to be turned on or off. The pixel driving circuit is formed in a semiconductor substrate, and a first ESD protection unit is formed in an external circuit outside the semiconductor substrate. The first ESD protection unit and the relationship between the first ESD protection unit and the pixel driving circuit are described below.

[0095]

[0110] EMBODIMENT 1

[0096]

[0111] To solve the problems in the related art, an ESD protection system for a micro device is provided in an embodiment of the present disclosure. Figure 1 shows a schematic block diagram of an electrostatic discharge (ESD) protection system for a micro display according to some embodiments of the present disclosure, for example, the first embodiment. Figure 2 shows a circuit diagram of an ESD protection system for a micro display according to some embodiments of the present disclosure, for example, the first embodiment and Figure 1. Figure 3 shows a circuit diagram of an ESD system according to some embodiments of the present disclosure, for example, the first embodiment.

[0097]

[0112] Referring to FIG. 1, the ESD protection system of the micro device includes a pixel driving circuit 01 and a first ESD protection unit 021. In some embodiments, the ESD protection system of the micro device also includes a second ESD protection unit 022, which will be further described below. The pixel driving circuit 01 is electrically connected to at least one micro LED pixel 00, such as a micro LED pixel array, and controls the on or off of the at least one micro LED pixel 00. The pixel driving circuit 01 is connected to a first level voltage 03 (Vdd) and the micro LED pixel 00. One end of the micro pixel driving circuit 01 is connected to the first level voltage 03 (Vdd), and the other end of the micro pixel driving circuit 01 is connected to the micro LED pixel 00. Referring to FIG. 3, in another embodiment, the pixel driving circuit 01 further includes at least one switch, for example switches 011, 012, and 013. The switches 011, 012, and / or 013 are preferably formed by transistors. The switches 011, 012, and 013 are connected in series to realize three-level control of the micro LED pixel on or off, so as to control the light emission intensity and light emission time. For example, the switches 011, 012, and 013 are connected in series to control the current of the micro pixel driving circuit 01 on or off, to control the PWM signal from the outside circuit on or off, and to control the scanning signal from the outside on or off, respectively. In some embodiments, in FIG. 3, the pixel driving circuit may be connected to a fourth level voltage 07 (Vdd'') instead of connecting to the first level voltage 03 (Vdd).

[0098]

[0113] 2 and 1, in some embodiments, the first ESD protection unit 021 is configured in an external circuit outside the pixel driving circuit. The first ESD protection unit 021 includes at least one unidirectional transient voltage suppressor. The cathode of the unidirectional transient voltage suppressor is connected to a first level voltage 03 (Vdd), and the anode of the unidirectional transient voltage suppressor is connected to a second level voltage 04 (Vcom). In some embodiments, the first ESD protection unit 021 may include at least two unidirectional transient voltage suppressors, each of which is separately connected to each of the micro LED pixels.

[0099]

[0114] Referring to Fig. 3, in some embodiments, the system further includes at least one pad unit 061, 062, 063, 064. Each pad unit 061, 062, 063, 064 includes a first pad 0611, 0621, 0631, 0641 and a second pad 0612, 0622, 0632, 0642 electrically connected to the first pad 0611, 0621, 0631, 0641, respectively. The first pad unit 061 is connected to a third voltage 05 (Vss). The second pad unit 062 is connected to a second level voltage 04 (Vcom). Furthermore, the second pad unit 062 is further connected to an anode of a unidirectional transient voltage suppressor in the first ESD protection unit 021. The third pad unit 063 is further connected to the first voltage 03 (Vdd) and the cathode of the unidirectional transient voltage suppressor. Furthermore, the pixel driving circuit 01 is in a semiconductor substrate, such as an IC substrate. The first pads 0611, 0621, 0631, 0641 are in the IC substrate 300, and the second pads 0612, 0622, 0632, 0642 are in an external circuit outside the IC substrate 300. Furthermore, the external circuit can be in a flexible or non-flexible printed circuit board (FPC). In some embodiments, the pad units 063, 064 are connected to a third level voltage 05 (Vss) and a fourth level voltage 07 (Vdd''), respectively. The second pads 0632 and 0642 are configured to connect with another electrical element outside the pixel driving circuit 01, such as outside the IC substrate 300.

[0100]

[0115] EMBODIMENT 2

[0101]

[0116] Figure 4 shows a schematic block diagram of an ESD system according to some embodiments of the present disclosure, such as the second embodiment. Figure 5 shows a circuit diagram of an ESD protection system according to some embodiments of the present disclosure, such as the second embodiment and Figure 4. Figure 6 shows a circuit diagram of an ESD protection system according to some embodiments of the present disclosure, such as the second embodiment.

[0102]

[0117] Referring to FIG. 4, the ESD protection system of the micro device includes a pixel driving circuit 01 and a first ESD protection unit 021. The pixel driving circuit 01 is electrically connected to at least one micro LED pixel 00, such as a micro LED pixel array, and controls the micro LED pixel 00 to be on or off. The pixel driving circuit 01 is connected to a first level voltage 03 (Vdd) and the micro LED pixel 00. One end of the micro pixel driving circuit 01 is connected to the first level voltage 03 (Vdd), and the other end of the micro pixel driving circuit 01 is connected to the micro LED pixel 00. Referring to FIG. 6, in another embodiment, the pixel driving circuit 01 further includes at least one switch, for example, switches 011, 012, and 013. The switches 011, 012, and / or 013 are preferably formed by transistors. The switches 011, 012, and 013 are connected in series to realize a three-level control of the micro LED pixel to be on or off, so as to control the light emission intensity and light emission time. For example, the switches 011, 012, and 013 are connected in series to control the current of the micropixel driving circuit 01 on or off, to control the PWM signal from the outside circuit on or off, and to control the scanning signal from the outside on or off, respectively. In some embodiments, in FIG. 6, in another embodiment, the pixel driving circuit may be connected to a fourth level voltage 07 (Vdd″) instead of connecting to the first level voltage 03 (Vdd).

[0103]

[0118] 5 and 4, the first ESD protection unit 021 is configured in an external circuit outside the pixel driving circuit. The first ESD protection unit 021 includes at least one unidirectional transient voltage suppressor. The cathode of the unidirectional transient voltage suppressor is connected to a third level voltage 05 (Vss), and the anode of the unidirectional transient voltage suppressor is connected to a second level voltage 04 (Vcom). The micro LED pixel 00 is connected to the second level voltage 04 (Vcom). In some embodiments, the first ESD protection unit 021 may include at least two unidirectional transient voltage suppressors, each of which is separately connected to each of the micro LED pixels.

[0104]

[0119] 6, the system further includes at least one pad unit 061, 062, 063, 064. Each pad unit 061, 062, 063, 064 includes a first pad 0611, 0621, 0631, 0641 and a second pad 0612, 0622, 0632, 0642 electrically connected to the first pad 0611, 0621, 0631, 0641, respectively. One of the pad units 061 is connected to a third voltage 05 (Vss) and a cathode of a unidirectional transient voltage suppressor in the ESD protection unit 021, and another pad unit 062 is connected to a second level voltage 04 (Vcom) and an anode of the unidirectional transient voltage suppressor in the ESD protection unit 021. Furthermore, the pixel driving circuit 01 is in a semiconductor substrate, such as an IC substrate. The first pads 0611, 0621, 0631, 0641 are in the IC substrate 300, and the second pads 0612, 0622, 0632, 0642 are in an external circuit outside the IC substrate 300. Furthermore, the external circuit can be in a flexible or non-flexible printed circuit board (FPC). In some embodiments, the pad units 063, 064 are connected to a third level voltage 05 (Vss) and a fourth level voltage 07 (Vdd''), respectively. The second pads 0632 and 0642 are configured to connect with another electrical element outside the pixel driving circuit.

[0105]

[0120] EMBODIMENT 3

[0106]

[0121] Fig. 7 shows a schematic block diagram of an ESD protection system according to some embodiments of the present disclosure, such as the third embodiment. Fig. 8 shows a circuit diagram of an ESD protection system according to some embodiments of the present disclosure, such as the third embodiment and Fig. 7. Fig. 9 shows a circuit diagram of an ESD system according to some embodiments of the present disclosure, such as the third embodiment.

[0107]

[0122] Referring to FIG. 7, the ESD protection system of the micro device includes a pixel driving circuit 01 and a first ESD protection unit 021. The pixel driving circuit 01 is electrically connected to at least one micro LED pixel 00, such as a micro LED pixel array, and controls the micro LED pixel 00 to be on or off. The pixel driving circuit 01 is connected to a first level voltage 03 (Vdd) and the micro LED pixel 00. One end of the micro pixel driving circuit 01 is connected to the first level voltage 03 (Vdd), and the other end of the micro pixel driving circuit 01 is connected to the micro LED pixel 00. Referring to FIG. 9, in another embodiment, the pixel driving circuit 01 further includes at least one switch, for example, switches 011, 012, and 013. The switches 011, 012, and / or 013 are preferably formed by transistors. The switches 011, 012, and 013 are connected in series to realize a three-level control of the micro LED pixel to be on or off, so as to control the light emission intensity and light emission time. For example, the switches 011, 012, and 013 are connected in series to control the current of the micropixel driving circuit 01 on or off, to control the PWM signal from the outside circuit on or off, and to control the scanning signal from the outside on or off, respectively. In some embodiments, in FIG. 3, the pixel driving circuit may be connected to a fourth level voltage 07 (Vdd″) instead of being connected to the first level voltage 05 (Vdd).

[0108]

[0123] 8 and 7, the first ESD protection unit 021 is configured in an external circuit outside the pixel driving circuit. The first ESD protection unit 021 includes at least one first unidirectional transient voltage suppressor 0211 and at least one second unidirectional transient voltage suppressor 0212. The cathode of the first unidirectional transient voltage suppressor 0211 is connected to the first level voltage 03 (Vdd), and the anode of the first unidirectional transient voltage suppressor 0211 is connected to the second level voltage 04 (Vcom). In some embodiments, the first ESD protection unit 021 may include at least two first unidirectional transient voltage suppressors 0211, each of which is separately connected to each of the micro LED pixels 00. Further, the cathode of the second unidirectional transient voltage suppressor 0212 is connected to the third level voltage 05 (Vss), and the anode of the second unidirectional transient voltage suppressor 0212 is connected to the second level voltage 04 (Vcom). The micro LED pixel 00 is connected to the second level voltage 04 (Vcom). In some embodiments, the first ESD protection unit 021 may include at least two second unidirectional transient voltage suppressors 0212, each of which is separately connected to each of the micro LED pixels 00.

[0109]

[0124] 9, the system further includes at least one pad unit 061, 062, 063, 064. Each pad unit 061, 062, 063, 064 includes a first pad 0611, 0621, 0631, 0641 and a second pad 0612, 0622, 0632, 0642 electrically connected to the first pad 0611, 0621, 0631, 0641, respectively. The first pad unit 061 is connected to the third voltage 05 (Vss) and the cathode of the second unidirectional transient voltage suppressor 0212. The second pad unit 062 is connected to the second level voltage 04 (Vcom) and the anode of the second unidirectional transient voltage suppressor 0212. Furthermore, the second pad unit 062 is further connected to the anode of the first unidirectional transient voltage suppressor 0211. The third pad unit 063 is further connected to the first voltage 03 (Vdd) and the cathode of the first unidirectional transient voltage suppressor 0211. In some embodiments, the pad units 063, 064 are respectively connected to a third level voltage 05 (Vss) and a fourth level voltage (Vdd''). The second pads 0632 and 0642 are configured to connect with another electrical element outside the pixel driving circuit. Furthermore, the pixel driving circuit 01 is in a semiconductor substrate, such as an IC substrate. The first pads 0611, 0621, 0631, 0641 are in the IC substrate 300, and the second pads 0612, 0622, 0632, 0642 are in an external circuit outside the IC substrate 300. Additionally, the external circuitry may be in a flexible or non-flexible printed circuit board (FPC).

[0110]

[0125] EMBODIMENT 4

[0111]

[0126] 10 shows a circuit diagram of an ESD protection system according to some embodiments of the present disclosure, such as the fourth embodiment. FIG. 11 shows a circuit diagram of an ESD system according to some embodiments of the present disclosure, such as the fourth embodiment.

[0112]

[0127] Referring to FIG. 10, the ESD protection system of the micro device includes a pixel driving circuit 01 and a first ESD protection unit 021. The pixel driving circuit 01 is electrically connected to at least one micro LED pixel 00, such as a micro LED pixel array, and controls the micro LED pixel 00 to be on or off. The pixel driving circuit 01 is connected to a first level voltage 03 (Vdd) and the micro LED pixel 00. One end of the micro pixel driving circuit 01 is connected to the first level voltage 03 (Vdd), and the other end of the micro pixel driving circuit 01 is connected to the micro LED pixel 00. Referring to FIG. 11, in another embodiment, the pixel driving circuit 01 further includes at least one switch, for example, switches 011, 012, and 013. The switches 011, 012, and / or 013 are preferably formed by transistors. The switches 011, 012, and 013 are connected in series to realize a three-level control of the micro LED pixel to be on or off, so as to control the light emission intensity and light emission time. For example, the switches 011, 012, and 013 are connected in series to control the current of the micropixel driving circuit 01 on or off, to control the PWM signal from the outside circuit on or off, and to control the scanning signal from the outside on or off, respectively. In some embodiments, in FIG. 11, the pixel driving circuit may be connected to a fourth level voltage 07 (Vdd″) instead of being connected to the first level voltage 03 (Vdd).

[0113]

[0128] Referring to FIG. 10, the first ESD protection unit 021 is configured in an external circuit outside the pixel driving circuit. The first ESD protection unit 021 includes at least one bidirectional transient voltage suppressor. One end of the bidirectional transient voltage suppressor is connected to a first level voltage 03 (Vdd), and the other end of the bidirectional transient voltage suppressor is connected to a second level voltage 04 (Vcom). In some embodiments, the first ESD protection unit 021 may include at least two bidirectional transient voltage suppressors, each of which is separately connected to each of the micro LED pixels. In some embodiments, the bidirectional transient voltage suppressor may be conductive at both ends of the bidirectional transient voltage suppressor. The bidirectional transient voltage suppressor may be selected from conventional bidirectional transient voltage suppressors, which is understandable to those skilled in the art and will not be further described herein.

[0114]

[0129] Referring to Fig. 11, the system further includes at least one pad unit 061, 062, 063, 064. Each pad unit 061, 062, 063, 064 includes a first pad 0611, 0621, 0631, 0641 and a second pad 0612, 0622, 0632, 0642 electrically connected to the first pad 0611, 0621, 0631, 0641, respectively. The first pad unit 061 is connected to a third voltage 05 (Vss). The second pad unit 062 is connected to a second level voltage 04 (Vcom). Furthermore, the second pad unit 062 is further connected to one end of a bidirectional transient voltage suppressor in the first ESD protection unit 021. The third pad unit 063 is further connected to the first voltage 03 (Vdd) and the other end of the bidirectional transient voltage suppressor. Furthermore, the pixel driving circuit 01 is in a semiconductor substrate, such as an IC substrate. The first pads 0611, 0621, 0631, 0641 are in the IC substrate 300, and the second pads 0612, 0622, 0632, 0642 are in an external circuit outside the IC substrate 300. Furthermore, the external circuit can be in a flexible or non-flexible printed circuit board (FPC). In some embodiments, the pad units 063, 064 are connected to a third level voltage 05 (Vss) and a fourth level voltage 07 (Vdd''), respectively. The second pads 0632 and 0642 are configured to connect with another electrical element outside the pixel driving circuit 01, such as outside the IC substrate 300.

[0115]

[0130] EMBODIMENT 5

[0116]

[0131] 12 shows a circuit diagram of an ESD protection system according to some embodiments of the present disclosure, such as the fifth embodiment. FIG. 13 shows a circuit diagram of an ESD system according to some embodiments of the present disclosure, such as the fifth embodiment.

[0117]

[0132] Referring to FIG. 12, the ESD protection system of the micro device includes a pixel driving circuit 01 and a first ESD protection unit 021. The pixel driving circuit 01 is electrically connected to at least one micro LED pixel 00, such as a micro LED pixel array, and controls the micro LED pixel 00 to be on or off. The pixel driving circuit 01 is connected to a first level voltage 03 (Vdd) and the micro LED pixel 00. One end of the micro pixel driving circuit 01 is connected to the first level voltage 03 (Vdd), and the other end of the micro pixel driving circuit 01 is connected to the micro LED pixel 00. Referring to FIG. 13, in another embodiment, the pixel driving circuit 01 further includes at least one switch, for example, switches 011, 012, and 013. The switches 011, 012, and / or 013 are preferably formed by transistors. The switches 011, 012, and 013 are connected in series to realize a three-level control of the micro LED pixel to be on or off, so as to control the light emission intensity and light emission time. For example, the switches 011, 012, and 013 are connected in series to control the current of the micropixel driving circuit 01 on or off, to control the PWM signal from the outside circuit on or off, and to control the scanning signal from the outside on or off, respectively. In some embodiments, in FIG. 13, in another embodiment, the pixel driving circuit may be connected to a fourth level voltage 07 (Vdd″) instead of being connected to the first level voltage 03 (Vdd).

[0118]

[0133] Referring to FIG. 12, the first ESD protection unit 021 is configured in an external circuit outside the pixel driving circuit. The first ESD protection unit 021 includes at least one bidirectional transient voltage suppressor. One end of the bidirectional transient voltage suppressor is connected to a third level voltage 05 (Vss), and the other end of the bidirectional transient voltage suppressor is connected to a second level voltage 04 (Vcom). The micro LED pixel 00 is connected to the second level voltage 04 (Vcom). In some embodiments, the first ESD protection unit 021 may include at least two bidirectional transient voltage suppressors, each of which is separately connected to each of the micro LED pixels.

[0119]

[0134] 13, the system further includes at least one pad unit 061, 062, 063, 064. Each pad unit 061, 062, 063, 064 includes a first pad 0611, 0621, 0631, 0641 and a second pad 0612, 0622, 0632, 0642 electrically connected to the first pad 0611, 0621, 0631, 0641, respectively. One of the pad units 061 is connected to a third voltage 05 (Vss) and one end of a bidirectional transient voltage suppressor in the ESD protection unit 021, and another pad unit 062 is connected to a second level voltage 04 (Vcom) and the other end of the bidirectional transient voltage suppressor in the ESD protection unit 021. Furthermore, the pixel driving circuit 01 is in a semiconductor substrate, such as an IC substrate. The first pads 0611, 0621, 0631, 0641 are in the IC substrate 300, and the second pads 0612, 0622, 0632, 0642 are in an external circuit outside the IC substrate 300. Furthermore, the external circuit can be in a flexible or non-flexible printed circuit board (FPC). In some embodiments, the pad units 063, 064 are connected to a third level voltage 05 (Vss) and a fourth level voltage 07 (Vdd''), respectively. The second pads 0632 and 0642 are configured to connect with another electrical element outside the pixel driving circuit.

[0120]

[0135] EMBODIMENT 6

[0121]

[0136] 14 shows a circuit diagram of an ESD protection system according to some embodiments of the present disclosure, such as the sixth embodiment. FIG. 15 shows a circuit diagram of an ESD system according to some embodiments of the present disclosure, such as the sixth embodiment.

[0122]

[0137] Referring to FIG. 14, the ESD protection system of the micro device includes a pixel driving circuit 01 and a first ESD protection unit 021. The pixel driving circuit 01 is electrically connected to at least one micro LED pixel 00, such as a micro LED pixel array, and controls the micro LED pixel 00 to be on or off. The pixel driving circuit 01 is connected to a first level voltage 03 (Vdd) and the micro LED pixel 00. One end of the micro pixel driving circuit 01 is connected to the first level voltage 03 (Vdd), and the other end of the micro pixel driving circuit 01 is connected to the micro LED pixel 00. Referring to FIG. 15, in another embodiment, the pixel driving circuit 01 further includes at least one switch, for example, switches 011, 012, and 013. The switches 011, 012, and / or 013 are preferably formed by transistors. The switches 011, 012, and 013 are connected in series to realize a three-level control of the micro LED pixel to be on or off, so as to control the light emission intensity and light emission time. For example, the switches 011, 012, and 013 are connected in series to control the current of the micropixel driving circuit 01 on or off, to control the PWM signal from the outside circuit on or off, and to control the scanning signal from the outside on or off, respectively. In some embodiments, in FIG. 15, the pixel driving circuit may be connected to a fourth level voltage 07 (Vdd″) instead of being connected to the first level voltage 05 (Vdd).

[0123]

[0138] Referring to FIG. 14, the first ESD protection unit 021 is configured in an external circuit outside the pixel driving circuit. The first ESD protection unit 021 includes at least one first ESD protection element and a second ESD protection element, where the first ESD protection element is a first bidirectional transient voltage suppressor 0211 and the second ESD protection element is a second bidirectional transient voltage suppressor 0212. One end of the first bidirectional transient voltage suppressor 0211 is connected to a first level voltage 03 (Vdd), and the other end of the first bidirectional transient voltage suppressor 0211 is connected to a second level voltage 04 (Vcom). In some embodiments, the first ESD protection unit 021 may include at least two first bidirectional transient voltage suppressors 0211, where each of the bidirectional transient voltage suppressors 0211 is separately connected to each of the micro LED pixels. Furthermore, one end of the second bidirectional transient voltage suppressor 0212 is connected to the third level voltage 05 (Vss), and the other end of the second bidirectional transient voltage suppressor 0212 is connected to the second level voltage 04 (Vcom). The micro LED pixel 00 is connected to the second level voltage 04 (Vcom). In some embodiments, the first ESD protection unit 021 may include at least two second bidirectional transient voltage suppressors 0212, each of which is separately connected to each of the micro LED pixels.

[0124]

[0139] 15, the system further includes at least one pad unit 061, 062, 063, 064. Each pad unit 061, 062, 063, 064 includes a first pad 0611, 0621, 0631, 0641 and a second pad 0612, 0622, 0632, 0642 electrically connected to the first pad 0611, 0621, 0631, 0641, respectively. The first pad unit 061 is connected to a third voltage 05 (Vss) and one end of a second bidirectional transient voltage suppressor 0212. The second pad unit 062 is connected to a second level voltage 04 (Vcom) and the other end of the second bidirectional transient voltage suppressor 0212. Furthermore, the third pad unit 063 is further connected to the first voltage 03 (Vdd) and one end of the first bidirectional transient voltage suppressor 0211, and the second pad unit 062 is further connected to the other end of the first bidirectional transient voltage suppressor 0211. In some embodiments, the pad units 063, 064 are respectively connected to a third level voltage 05 (Vss) and a fourth level voltage (Vdd''). The second pads 0632 and 0642 are configured to connect with another electrical element outside the pixel driving circuit. Furthermore, the pixel driving circuit 01 is in a semiconductor substrate, such as an IC substrate. The first pads 0611, 0621, 0631, 0641 are in the IC substrate 300, and the second pads 0612, 0622, 0632, 0642 are in an external circuit outside the IC substrate 300. Additionally, the external circuitry may be in a flexible or non-flexible printed circuit board (FPC).

[0125]

[0140] According to the above-mentioned embodiments 1 to 6, in some embodiments, the ESD protection system further includes a second ESD protection unit, a third ESD protection unit, and a fourth ESD protection unit.

[0126]

[0141] Further referring to FIG. 1-FIG. 15, the system includes a second ESD protection unit 022 electrically connected to the third level voltage 05 (Vss) and the first level voltage 03 (Vdd). The second ESD protection unit 022 is a power rail ESD clamp. Referring to FIG. 3, 6, 9, 11, 13, and 15, the second ESD protection unit 022 includes at least two second ESD sub-clamps. The second ESD sub-clamps are preferably connected in parallel with each other, where one end of each second ESD sub-clamp is connected to the third level voltage 05 (Vss), and the other end of each second ESD sub-clamp is connected to the first level voltage 03 (Vdd).

[0127]

[0142] The first level voltage 03 (Vdd) is preferably higher than the second level voltage 04 (Vcom). The third level voltage 05 (Vss) is higher than the second level voltage 04 (Vcom), and the first level voltage 03 (Vdd) is higher than the first level voltage 03 (Vss). The second level voltage 04 (Vcom) is a negative voltage and is applied to the micro LED pixel 00 because the micro LED pixel 00 cannot operate under high voltage values. In some embodiments, it is preferred that the second level voltage (Vcom) 04 is a negative voltage, the third level voltage (Vss) 05 is zero, and the first level voltage (Vdd) 03 is a positive voltage. For example, the voltage of Vdd can be 1V to 3V, the voltage of Vdd'' can be 1V to 2V, the voltage of Vss can be 0V, and the voltage of Vcom can be -5V to 0V.

[0128]

[0143] 3, 6, 9, 11, 13 and 15, the system further includes a third ESD protection unit 023. One end of the third ESD protection unit 023 is connected to the first level voltage 03 (Vdd), and another end of the third ESD protection unit 023 is connected to the third level voltage 05 (Vss).

[0129]

[0144] In some embodiments, an input / output (IO) circuit 06 for receiving a signal from outside is formed beside the pixel driving circuit 01. A third ESD protection unit 023 for providing ESD protection to the IO circuit 06 is connected to the IO circuit 06. The IO circuit 06 may be formed around the pixel driving circuit 01 or around the micro LED pixel 00 in another embodiment. The third ESD protection unit 023 includes at least two third ESD sub-clamps 0231 and 0232 connected in series with each other, for example as shown in FIG. 3. In some examples, the third ESD sub-clamp 0231 is a PMOS and the third ESD sub-clamp 0232 is an NMOS. One end of one third ESD sub-clamp 0231 is connected to the first level voltage 03 (Vdd), and the other end of the third ESD sub-clamp 0231 is connected to another third ESD sub-clamp 0232, which is connected to the third level voltage 05 (Vss). Furthermore, the gate and source of the third ESD sub-clamp 0231 are connected to the first level voltage 03 (Vdd), the drain of the third ESD sub-clamp 0231 is connected to the source of the third ESD sub-clamp 0232, and the gate and drain of the third ESD sub-clamp 0232 are connected to the third level voltage 05 (Vss). The IO circuit 06 is connected to the drain of the third ESD sub-clamp 0231 and the source of the third ESD sub-clamp 0232.

[0130]

[0145] 3, 6, 9, 11, 13 and 15, in another embodiment, the ESD protection system further includes a fourth ESD protection unit 024. One end of the fourth ESD protection unit 024 is connected to a fourth level voltage 07 (Vdd''), and the other end of the fourth ESD protection unit 024 is connected to a third level voltage 05 (Vss).

[0131]

[0146] In some embodiments, preferably, the first level voltage 03 (Vdd) is higher than the second level voltage 04 (Vcom). The first level voltage 03 (Vdd) is higher than the fourth level voltage 07 (Vdd''). The third level voltage 05 (Vss) is higher than the second level voltage 04 (Vcom). And the first level voltage 03 (Vdd) is higher than the third level voltage 05 (Vss). The second level voltage 04 (Vcom) is preferably a negative voltage and is applied to the micro LED pixel 00 because the micro LED pixel 00 cannot operate under high voltage values. Furthermore, preferably, the first level voltage 03 (Vdd) is a positive voltage, the fourth level voltage 07 (Vdd'') is a positive voltage, and the third level voltage 05 (Vss) is zero. For example, the voltage of Vdd can be 1V to 3V, the voltage of Vdd'' can be 1V to 2V, the voltage of Vss can be 0V, and the voltage of Vcom can be -5V to 0V.

[0132]

[0147] FIG. 16 shows a circuit diagram of an ESD protection unit according to some embodiments of the present disclosure. In some embodiments, the second ESD protection unit 022, the third ESD protection unit 023, and the fourth ESD protection unit 024 are power rail ESD clamps, which can be seen in FIG. 16. FIG. 16 is an example diagram of a power pin ESD network consisting of grounded gate n-channel metal oxide semiconductor field effect transistor (MOSFET) devices. In some embodiments, the structure 022L on the left side of FIG. 16 is the actual power clamp, and the structure 022R on the right side of FIG. 16 illustrates the principle of a power clamp ESD protection system. A grounded gate n-channel metal oxide semiconductor (NMOS) ESD network such as 022L is a network for complementary metal oxide semiconductor (CMOS) technology. Typically, it is an n-channel MOSFET with the MOSFET drain connected to the power pin 1602 of V′DD, which also has its gate and source connected to the ground power rail 1604. This circuit remains “off” in normal operation. When the signal pin 1602 exceeds the MOSFET snapback voltage, the circuit discharges to the V'SS power rail. In some examples, the snapback voltage is the voltage applied to a transistor when avalanche breakdown or impact ionization in the transistor provides enough base current to turn the transistor on. When the voltage on the signal pin 1602 falls below ground potential, the MOSFET drain biases the p-well or p-substrate region to achieve electrostatic protection purposes.

[0133]

[0148] In these embodiments, the micro LED pixel 00 can be replaced by a micro LED pixel array, and the pixel driving circuit 01 controls the on or off of each of the micro LED pixels in the micro LED pixel array. A first ESD protection unit 021 is preferably connected to each micro LED pixel.

[0134]

[0149] In some embodiments, the micro device with one or more ESD protection units, such as those shown in FIGS. 3, 6, 9, 11, 13, and 15, is selected from one of a micro-inorganic LED device and / or a micro-organic LED device. In some embodiments, the micro-LED pixel 00 is selected from an inorganic micro-LED or an organic micro-LED. For example, the micro device may be a micro-display panel. The micro-LED display panel includes a micro-LED array forming a pixel array, such as a 640*480 pixel array. In some embodiments, the length of the micro-LED display panel may not exceed 100, 200, 300, 400, or 500 microns, and the width of the micro-LED display panel may not exceed 100, 200, 300, 400, or 500 microns. In some embodiments, the length of the micro-LED display panel may not exceed 1 cm, and the width of the micro-LED display panel may not exceed 1 cm. In some embodiments, the length of the micro-LED display panel may not exceed 2 cm, and the width of the micro-LED display panel may not exceed 2 cm. In some embodiments, the length of the micro LED display panel cannot exceed 10 cm, and the width of the micro LED display panel cannot exceed 10 cm. In some embodiments, the length of the micro LED display panel cannot exceed 20 cm, and the width of the micro LED display panel cannot exceed 20 cm. The micro LED display panel also includes an IC backside. The micro LED display panel includes a micro LED array including a plurality of inorganic micro LEDs for showing a display image. The micro LED array is electrically connected and coupled to the IC backside. The second ESD protection unit 022, the third ESD protection unit 023, the fourth ESD protection unit 024, and the pixel driving circuit 01 are formed in the IC backside. The first ESD protection unit 021 is formed in an external circuit board, such as an external FPC board, outside the IC backside 300 and independent from the IC backside.In some embodiments, the first ESD protection unit 021 is configured to protect the micro LED pixel and the pixel driving circuit under electrostatic discharge conditions. The first ESD protection unit 021 can avoid current leakage of the pixel driving circuit and other circuits in the backside of the IC, and avoid damage to the micro LED pixel.

[0135]

[0150] In some embodiments, the ESD protection unit is a part of the IC circuit for protecting the IC circuit under electrostatic discharge conditions. The ESD protection unit can prevent current leakage of the IC circuit in the backside of the IC.

[0136]

[0151] Here, the micro LED can be selected from inorganic LED or organic LED. On the back of the IC, the micro LED array is electrically connected to an electrode connection area, and a signal line area is formed around the electrode connection area. The back of the IC receives a signal such as image data from the outside through the signal line, and thereby controls the corresponding micro LED to emit light. The back of the IC generally uses an 8-bit digital-to-analog converter (DAC). The 8-bit DAC has 256 display levels, each level corresponding to one gray level, that is, the 8-bit DAC can provide 256 different gray levels. Any level among the 256 gray levels can be applied to the micro LED, so that a gray level ranging from 0 to 255 can be displayed by one pixel. Optionally, the luminance value of the micro LED can be controlled by the voltage amplitude or current amplitude of the signal obtained by the back of the IC, and the gray level can be indicated by the time interval, for example, the pulse width, of the signal.

[0137]

[0152] Those skilled in the art will appreciate that the microdisplay panel is not limited to the structures described above and may include more or fewer components than those shown, or some components may be combined, or different components may be utilized.

[0138]

[0153] It is understood by those skilled in the art that all or some of the steps for implementing the above-mentioned embodiments may be implemented by hardware, or may be implemented by a program that instructs related hardware. The program may be stored in a flash memory, a conventional computer device, a central processing module, a coordinating module, etc.

[0139]

[0154] The above description is merely an embodiment of the present disclosure, and the present disclosure is not limited to those embodiments. Any modifications, equivalent replacements, and improvements made without departing from the concept and principle of the present disclosure shall fall within the protection scope of the present disclosure.

[0140]

[0155] Further embodiments include various subsets of the above embodiments, including combinations or rearrangements of the embodiments shown in Figures 1-16 into various other embodiments.

[0141]

[0156] Although the detailed description includes many details, they should not be construed as limiting the scope of the invention, but merely as describing different examples and aspects of the invention. It should be understood that the scope of the invention includes other embodiments not discussed in detail above. For example, the approach described above can also be applied to the integration of functional devices other than LEDs and OLEDs with control circuits other than pixel driving circuits. Examples of devices other than LEDs include vertical cavity surface emitting lasers (VCSELs), photodetectors, microelectromechanical systems (MEMS), silicon photonic device, power electronic devices, and distributed feedback lasers (DFBs). Examples of other control circuits include current drivers, voltage drivers, transimpedance amplifiers, and logic circuits.

[0142]

[0157] The foregoing description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the embodiments described herein and variations thereof. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the general principles defined herein may be applied to other embodiments without departing from the spirit or scope of the subject matter disclosed herein. Thus, the present disclosure is not intended to be limited to the embodiments shown herein, but is to be accorded the widest scope consistent with the following claims and the principles and novel features disclosed herein.

[0143]

[0158] Features of the present invention may be implemented in, using, or with the aid of a computer program product, such as a storage medium or computer-readable storage medium having instructions stored therein that can be used to program a processing system to perform any of the features presented herein. Storage media include, but are not limited to, high-speed random access memories, such as DRAM, SRAM, DDR, RAM, or other random access solid-state memory devices, and may also include non-volatile memories, such as one or more magnetic disk storage devices, optical disk storage devices, flash memory devices, or other non-volatile solid-state storage devices. Memory optionally includes one or more storage devices located remotely from the CPU. The memory, or alternatively, a non-volatile memory device within the memory, includes a non-transitory computer-readable storage medium.

[0144]

[0159] Stored on any machine-readable medium, features of the present invention may be embodied in software and / or firmware for controlling the hardware of a processing system and for enabling the processing system to utilize the results of the present invention and interact with other mechanisms. Such software or firmware may include, but is not limited to, application code, device drivers, operating systems, and execution environments / containers.

[0145]

[0160] It will be understood that although terms such as "first" and "second" may be used herein to describe various elements or steps, these elements or steps are not to be limited by these terms, but are used only to distinguish one element or step from another.

[0146]

[0161] The terms used herein are for the purpose of describing particular embodiments only and are not intended to limit the scope of the claims. When used in the description of the embodiments and in the appended claims, the singular forms "a," "an," and "the" are intended to include the plural forms unless the context clearly dictates otherwise. As used herein, the term "and / or" is understood to refer to and include any and all possible combinations of one or more of the associated listed items. As used herein, the terms "comprises" and / or "comprising" are further understood to specify the presence of stated features, integers, steps, operations, elements, and / or components, but do not exclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and / or groups thereof.

[0147]

[0162] As used herein, the term "if" may be interpreted to mean "when" or "as soon as" or "in response to determining" or "in accordance with a determination that" or "in response to detecting" the stated condition precedent is true, depending on the context. Similarly, the phrases "determined (that the stated condition precedent is true)" or "if (the stated condition precedent is true)" or "when (the stated condition precedent is true)" may be interpreted to mean "upon determining" or "in response to determining" or "in accordance with a determination that" or "upon detecting" or "in response to detecting" the stated condition precedent is true, depending on the context.

[0148]

[0163] The foregoing description has been described with reference to specific embodiments for explanatory purposes. However, the above illustrative discussion is not intended to be exhaustive or to limit the scope of the claims to the precise forms disclosed. Many modifications and variations are possible in light of the above teachings. The embodiments have been chosen and described to best explain the principles of operation and practical applications, thereby enabling others skilled in the art to best utilize the invention and various embodiments.

Claims

1. 1. An electrostatic discharge (ESD) protection system for a micro device, comprising: a pixel drive circuit electrically connected to at least one micro LED pixel for controlling the on or off of the micro LED pixel, the pixel drive circuit being formed in a semiconductor substrate; a first ESD protection unit formed in an external circuit outside the semiconductor substrate.

2. 2. The micro device ESD protection system of claim 1, wherein a first end of the first ESD protection unit is connected to a first level voltage (Vdd), a second end of the first ESD protection unit is connected to a second level voltage (Vcom), and the micro LED pixel is connected to the second level voltage (Vcom).

3. 3. The micro device ESD protection system of claim 2, wherein the cathode of the micro LED pixel is connected to the second level voltage (Vcom).

4. 3. The ESD protection system of claim 2, wherein the system further comprises one or more pad units, each of the pad units including a first pad and a second pad electrically connected to the first pad, a first pad unit of the pad units being connected to the second level voltage (Vcom) and the second end of the first ESD protection unit, and a second pad unit of the pad units being connected to the first voltage (Vdd) and the first end of the first ESD protection unit.

5. 5. The ESD protection system of claim 4, wherein the pixel driving circuit is in an integrated circuit (IC) substrate, the first pad of each of the pad units is in the IC substrate, and the second pad of each of the pad units is in the external circuit.

6. The micro device ESD protection system of claim 5 , wherein the external circuit is in a flexible printed circuit board.

7. 3. The micro device ESD protection system of claim 2, wherein the first level voltage (Vdd) is greater than the second level voltage (Vcom).

8. 8. The micro device ESD protection system of claim 7, wherein the first level voltage (Vdd) is a positive voltage and the second level voltage (Vcom) is a negative voltage.

9. 3. The micro device ESD protection system of claim 2, wherein the at least one micro LED pixel is a micro LED pixel array, and the pixel drive circuit controls the on or off of each of the micro LED pixels in the micro LED pixel array.

10. 3. The micro device ESD protection system of claim 2, wherein the micro pixel drive circuit is connected to the first level voltage (Vdd) and to the micro LED pixel.

11. 3. The ESD protection system of claim 2, wherein the system further comprises a second ESD protection unit electrically connected to a third level voltage (Vss) and to the first level voltage (Vdd).

12. The micro device ESD protection system of claim 11 , wherein the second ESD protection unit is a power rail ESD clamp.

13. 12. The ESD protection system of claim 11, wherein the second ESD protection unit includes a plurality of second ESD sub-clamps, a first end of each of the second ESD sub-clamps is connected to the third level of voltage (Vss), a second end of each of the second ESD sub-clamps is connected to the first level of voltage (Vdd), and the second ESD sub-clamps are connected in parallel with each other.

14. 12. The micro device ESD protection system of claim 11, wherein the first level voltage (Vdd) is greater than the second level voltage (Vcom) and the third level voltage (Vss) is greater than the second level voltage (Vcom).

15. 15. The micro device ESD protection system of claim 14, wherein the second level voltage (Vcom) is a negative voltage, the first level voltage (Vdd) is a positive voltage, and the third level voltage (Vss) is zero.

16. 10. The micro device ESD protection system of claim 1, wherein the micro device is selected from a micro inorganic LED device or a micro organic LED device, and the micro LED pixel is selected from an inorganic micro LED or an organic micro LED.

17. 3. The ESD protection system of claim 2, wherein the system further comprises a third ESD protection unit, a first end of the third ESD protection unit being connected to the first level voltage (Vdd) and a second end of the third ESD protection unit being connected to a fourth level voltage (Vss).

18. 20. The micro device ESD protection system of claim 17, wherein the third ESD protection unit is connected to an input / output (IO) circuit.

19. 20. The ESD protection system of claim 18, wherein the third ESD protection unit includes at least two third ESD sub-clamps, the third ESD sub-clamps being connected in series with each other.

20. 3. The micro device ESD protection system of claim 2, wherein a first end of the micro pixel driving circuit is connected to a fourth level voltage (Vdd'') and a second end of the micro pixel driving circuit is connected to the micro LED pixel.

21. 21. The ESD protection system of claim 20, wherein the system further comprises a fourth ESD protection unit, a first end of the fourth ESD protection unit being connected to the fourth level voltage (Vdd'') and a second end of the fourth ESD protection unit being connected to a third level voltage (Vss).

22. 22. The micro device ESD protection system of claim 21, wherein the third level voltage (Vss) is lower than the fourth level voltage (Vdd'').

23. The micro device ESD protection system of claim 1 , wherein the pixel drive circuit includes at least one switch.

24. The micro device ESD protection system of claim 2 , wherein the first ESD protection unit includes at least one unidirectional transient voltage suppressor.

25. 25. The micro device ESD protection system of claim 24, wherein a cathode of the unidirectional transient voltage suppressor is connected to the first level voltage (Vdd) and an anode of the unidirectional transient voltage suppressor is connected to the second level voltage (Vcom).

26. 25. The ESD protection system of claim 24, wherein the system further comprises one or more pad units, each of the pad units including a first pad and a second pad electrically connected to the first pad, a first pad unit of the pad units being connected to the second level voltage (Vcom) and to the anode of the unidirectional transient voltage suppressor, and a second pad unit of the pad units being connected to the first voltage (Vdd) and to the cathode of the unidirectional transient voltage suppressor.

27. The micro device ESD protection system of claim 2 , wherein the first ESD protection unit includes at least one bidirectional transient voltage suppressor.

28. 1. An electrostatic discharge (ESD) protection system for a micro device, comprising: a pixel drive circuit electrically connected to at least one micro LED pixel for controlling the on or off of the micro LED pixel, the pixel drive circuit being formed in a semiconductor substrate; a first ESD protection unit formed in an external circuit outside the semiconductor substrate, a first end of the first ESD protection unit being connected to a third level voltage (Vss), a second end of the first ESD protection unit being connected to a second level voltage (Vcom), and the micro LED pixel being connected to the second level voltage (Vcom).

29. 30. The micro device ESD protection system of claim 28, wherein the cathode of the micro LED pixel is connected to the second level voltage (Vcom).

30. 30. The ESD protection system of claim 28, wherein the system further comprises one or more pad units, each of the pad units including a first pad and a second pad electrically connected to the first pad, a first pad unit of the pad units being connected to the third level voltage (Vss) and the first end of the first ESD protection unit, and a second pad unit of the pad units being connected to the second level voltage (Vcom) and the second end of the first ESD protection unit.

31. 31. The micro device ESD protection system of claim 30, wherein the pixel drive circuit is in an integrated circuit (IC) substrate, the first pad of each of the pad units is in the IC substrate, and the second pad of each of the pad units is in the external circuit.

32. 32. The micro device ESD protection system of claim 31, wherein the external circuitry is in a flexible printed circuit board.

33. 30. The micro device ESD protection system of claim 28, wherein the third level voltage (Vss) is greater than the second level voltage (Vcom).

34. 34. The micro device ESD protection system of claim 33, wherein the second level voltage (Vcom) is a negative voltage and the third level voltage (Vss) is zero.

35. 30. The micro device ESD protection system of claim 28, wherein the at least one micro LED pixel is a micro LED pixel array, and the pixel drive circuit controls the on or off of each of the micro LED pixels in the micro LED pixel array.

36. 36. The micro device ESD protection system of claim 35, wherein the first ESD protection unit includes at least two unidirectional transient voltage suppressors, each of the unidirectional transient voltage suppressors separately connected to each of the micro LED pixels.

37. 30. The micro device ESD protection system of claim 28, wherein the micropixel drive circuit is connected to a first level voltage (Vdd) and to the micro LED pixel.

38. 30. The micro device ESD protection system of claim 28, wherein the system further comprises a second ESD protection unit electrically connected to the third level voltage (Vss) and to a first level voltage (Vdd).

39. 40. The micro device ESD protection system of claim 38, wherein the second ESD protection unit is a power rail ESD clamp.

40. 39. The ESD protection system of claim 38, wherein the second ESD protection unit includes a plurality of second ESD sub-clamps, a first end of each of the second ESD sub-clamps being connected to the third level of voltage (Vss) and a second end of each of the second ESD sub-clamps being connected to the first level of voltage (Vdd), and the second ESD sub-clamps being connected in parallel with each other.

41. 39. The micro device ESD protection system of claim 38, wherein the first level voltage (Vdd) is greater than the second level voltage (Vcom), the third level voltage (Vss) is greater than the second level voltage (Vcom), and the first level voltage (Vdd) is greater than the third level voltage (Vss).

42. 42. The micro device ESD protection system of claim 41, wherein the second level voltage (Vcom) is a negative voltage, the first level voltage (Vdd) is a positive voltage, and the third level voltage (Vss) is zero.

43. 30. The micro device ESD protection system of claim 28, wherein the micro device is selected from a micro inorganic LED device or a micro organic LED device, and the micro LED pixel is selected from an inorganic micro LED or an organic micro LED.

44. 30. The ESD protection system of claim 28, wherein the system further includes a third ESD protection unit, a first end of the third ESD protection unit being connected to a first level voltage (Vdd) and a second other end of the third ESD protection unit being connected to the third level voltage (Vss).

45. 45. The micro device ESD protection system of claim 44, wherein the third ESD protection unit is connected to IO circuitry.

46. 45. The ESD protection system of claim 44, wherein the third ESD protection unit includes at least two third ESD sub-clamps, the third ESD sub-clamps being connected in series with each other.

47. 30. The micro device ESD protection system of claim 28, wherein a first end of the micro pixel drive circuit is connected to a fourth level voltage (Vdd'') and a second end of the micro pixel drive circuit is connected to the micro LED pixel.

48. 48. The micro device ESD protection system of claim 47, wherein the system further comprises a fourth ESD protection unit, a first end of the fourth ESD protection unit being connected to the fourth level voltage (Vdd'') and a second end of the fourth ESD protection unit being connected to the third level voltage (Vss).

49. 49. The micro device ESD protection system of claim 48, wherein the third level voltage (Vss) is lower than the fourth level voltage (Vdd'').

50. 30. The micro device ESD protection system of claim 28, wherein the pixel drive circuit includes at least one switch.

51. 30. The micro device ESD protection system of claim 28, wherein the first ESD protection unit includes at least one unidirectional transient voltage suppressor.

52. 52. The micro device ESD protection system of claim 51 , wherein a cathode of the unidirectional transient voltage suppressor is connected to the third level voltage (Vss) and an anode of the unidirectional transient voltage suppressor is connected to the second level voltage (Vcom).

53. 52. The ESD protection system of claim 51 , wherein the system further comprises one or more pad units, each of the pad units including a first pad and a second pad electrically connected to the first pad, a first pad unit of the pad units being connected to the third level voltage (Vss) and to a cathode of the unidirectional transient voltage suppressor, and a second pad unit of the pad units being connected to the second level voltage (Vcom) and to an anode of the unidirectional transient voltage suppressor.

54. 30. The micro device ESD protection system of claim 28, wherein the first ESD protection unit includes at least one bidirectional transient voltage suppressor.

55. 1. An electrostatic discharge (ESD) protection system for a micro device, comprising: a pixel drive circuit electrically connected to at least one micro LED pixel for controlling the on or off of the micro LED pixel, the pixel drive circuit being formed in a semiconductor substrate; a first ESD protection unit formed in an external circuit outside the semiconductor substrate, the first ESD protection unit including at least a first ESD protection element and a second ESD protection element, a first end of the first ESD protection element being connected to a first level voltage (Vdd), a second end of the first ESD protection element being connected to a second level voltage (Vcom), a first end of the second ESD protection element being connected to a third level voltage (Vss), a second end of the second ESD protection element being connected to the second level voltage (Vcom), and the micro LED pixel being connected to the second level voltage (Vcom).

56. 56. The micro device ESD protection system of claim 55, wherein the cathode of the micro LED pixel is connected to the second level voltage (Vcom).

57. The system further includes one or more pad units, each of the pad units including a first pad and a second pad electrically connected to the first pad, the pad units including a first pad unit, a second pad unit, and a third pad unit; the first pad unit is connected to the third voltage (Vss) and to the first end of the second ESD protection element; the second pad unit is connected to the second level voltage (Vcom) and to the second end of the second ESD protection element; the second pad unit is further connected to the second end of the first ESD protection element; 56. The micro device ESD protection system of claim 55, wherein the third pad unit is further connected to the first voltage (Vdd) and to the first end of the first ESD protection element.

58. 58. The micro device ESD protection system of claim 57, wherein the pixel driving circuit is in an IC substrate, the first pad of each of the pad units is in the IC substrate, and the second pad of each of the pad units is in the external circuit.

59. 60. The micro device ESD protection system of claim 58, wherein the external circuitry is in a flexible printed circuit board.

60. 56. The micro device ESD protection system of claim 55, wherein the first level voltage (Vdd) is greater than the second level voltage (Vcom), the third level voltage (Vss) is greater than the second level voltage (Vcom), and the first level voltage (Vdd) is greater than the third level voltage (Vss).

61. 61. The micro device ESD protection system of claim 60, wherein the second level voltage (Vcom) is a negative voltage, the first level voltage (Vdd) is a positive voltage, and the third level voltage (Vss) is zero.

62. 56. The micro device ESD protection system of claim 55, wherein the at least one micro LED pixel is a micro LED pixel array, and the pixel drive circuit controls the on or off of each of the micro LED pixels in the micro LED pixel array.

63. 56. The micro device ESD protection system of claim 55, wherein the micropixel drive circuit is connected to the first level voltage (Vdd) and to the micro LED pixel.

64. 56. The micro device ESD protection system of claim 55, wherein the system further comprises a second ESD protection unit electrically connected to the third level voltage (Vss) and to the first level voltage (Vdd).

65. 65. The micro device ESD protection system of claim 64, wherein the second ESD protection unit is a power rail ESD clamp.

66. 65. The ESD protection system of claim 64, wherein the second ESD protection unit includes a plurality of second ESD sub-clamps, a first end of each of the second ESD sub-clamps being connected to the third level of voltage (Vss) and a second end of each of the second ESD sub-clamps being connected to the first level of voltage (Vdd), and the second ESD sub-clamps being connected in parallel with each other.

67. 56. The micro device ESD protection system of claim 55, wherein the micro device is selected from a micro inorganic LED device or a micro organic LED device, and the micro LED pixel is selected from an inorganic micro LED or an organic micro LED.

68. 56. The micro device ESD protection system of claim 55, wherein the system further comprises a third ESD protection unit, a first end of the third ESD protection unit being connected to the first level voltage (Vdd) and a second end of the third ESD protection unit being connected to a fourth level voltage (Vss).

69. 69. The micro device ESD protection system of claim 68, wherein the third ESD protection unit is connected to IO circuitry.

70. 69. The micro device ESD protection system of claim 68, wherein the third ESD protection unit includes at least two third ESD sub-clamps, the third ESD sub-clamps being connected in series with each other.

71. 56. The micro device ESD protection system of claim 55, wherein a first end of the micro pixel drive circuit is connected to a fourth level voltage (Vdd″) and a second end of the micro pixel drive circuit is connected to the micro LED pixel.

72. 72. The ESD protection system of claim 71, wherein the system further comprises a fourth ESD protection unit, a first end of the fourth ESD protection unit being connected to the fourth level voltage (Vdd'') and a second end of the fourth ESD protection unit being connected to a third level voltage (Vss).

73. 73. The micro device ESD protection system of claim 72, wherein the third level voltage (Vss) is less than the fourth level voltage (Vdd'').

74. 56. The micro device ESD protection system of claim 55, wherein the pixel drive circuit includes at least one switch.

75. 56. The ESD protection system of claim 55, wherein the first ESD protection unit includes at least one first unidirectional transient voltage suppressor and at least one second unidirectional transient voltage suppressor, a cathode of the first unidirectional transient voltage suppressor connected to the first level of voltage (Vdd), an anode of the first unidirectional transient voltage suppressor connected to the second level of voltage (Vcom), a cathode of the second unidirectional transient voltage suppressor connected to the third level of voltage (Vss), and an anode of the second unidirectional transient voltage suppressor connected to the second level of voltage (Vcom).

76. The system further includes one or more pad units, each of the pad units including a first pad and a second pad electrically connected to the first pad, the pad units including a first pad unit, a second pad unit, and a third pad unit; the first pad unit is connected to the third voltage (Vss) and to the cathode of the second unidirectional transient voltage suppressor; the second pad unit is connected to the second level voltage (Vcom) and to the anode of the second unidirectional transient voltage suppressor; the second pad unit is further connected to the anode of the first unidirectional transient voltage suppressor; 76. The micro device ESD protection system of claim 75, wherein the third pad unit is further connected to the first voltage (Vdd) and to the cathode of the first unidirectional transient voltage suppressor.

77. 76. The micro device ESD protection system of claim 75, wherein the first ESD protection unit includes at least one of a first bidirectional transient voltage suppressor and a second bidirectional transient voltage suppressor.

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