Multi-zone lamp heating for chemical vapor deposition.

Abstract

The embodiments disclosed herein include a lamp module for a semiconductor processing chamber. In one embodiment, the lamp module plate comprises a back plate, a first ring extending from the back plate, a second ring extending from the back plate, and a third ring extending from the back plate. In one embodiment, the lamp module further comprises a first plurality of lamps between the first ring and the second ring, a second plurality of lamps between the second ring and the third ring, and a third plurality of lamps configured to emit infrared radiation that propagates into the third ring.

Description

[Technical field]

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS This application claims priority to U.S. Patent Application No. 17 / 733,685, filed April 29, 2022, the entire contents of which are incorporated herein by reference.

[0002] FIELD OF THE DISCLOSURE

[0002] Embodiments relate to the field of semiconductor manufacturing, and in particular to a chemical vapor deposition chamber having at least three heating zones. [Background technology]

[0003] In semiconductor manufacturing processes, control of substrate temperature is important to achieve the required process uniformity across the substrate. For example, careful control of wafer temperature may be required to achieve high process uniformity during chemical vapor deposition (CVD) processes. Typically, the substrate is heated using heat lamps. The lamps irradiate the substrate through an enclosure, i.e., the heater is outside the chamber. To allow thermal energy to pass through the enclosure, the enclosure is a material that is transparent to infrared radiation. For example, the enclosure may include quartz, etc. Similarly, lamps and an enclosure may be provided on the backside of the chamber to heat the backside of the substrate. To achieve improved temperature uniformity, the substrate may be rotated.

[0004] In existing CVD tools, a reflector is used to focus infrared radiation toward the surface of the substrate. In some cases, the reflector may include a first zone and a second zone. The first zone is focused on an outer region of the substrate, and the second zone is focused on a central region of the substrate. While two zones have some advantages, it may be desirable to allow for finer control of the substrate temperature than is possible with a two-zone reflector. Summary of the Invention

[0005] The embodiments disclosed herein include a lamp module for a semiconductor processing chamber. In one embodiment, the lamp module comprises a back plate, a first ring extending from the back plate, a second ring extending from the back plate, and a third ring extending from the back plate. In one embodiment, the lamp module further comprises a first plurality of lamps between the first ring and the second ring, a second plurality of lamps between the second ring and the third ring, and a third plurality of lamps configured to emit infrared radiation that propagates into the third ring.

[0006] The embodiments disclosed herein further include a semiconductor processing tool. In one embodiment, the semiconductor processing tool includes a pedestal for supporting a substrate, a first enclosure covering the pedestal, a second enclosure below the pedestal, and a first lamp module covering the first enclosure, the first lamp module including three or more heating zones, and a second lamp module below the second enclosure, the second lamp module including multiple heating zones.

[0007] The embodiment may further comprise a semiconductor processing tool. In one embodiment, the semiconductor processing tool comprises a pedestal for supporting a substrate, a first enclosure covering the pedestal, a second enclosure below the pedestal, and a first lamp module covering the first enclosure. In one embodiment, the first lamp module comprises a back plate, a first ring extending from the back plate, a second ring extending from the back plate, a third ring extending from the back plate, a first plurality of lamps between the first ring and the second ring, a second plurality of lamps between the second ring and the third ring, and a third plurality of lamps configured to emit infrared radiation that propagates into the third ring. In one embodiment, the semiconductor processing tool further comprises a second lamp module below the second enclosure, the second lamp module comprising a plurality of heating zones. [Brief description of the drawings]

[0008] [Figure 1A]FIG. 2 is a cross-sectional view of a semiconductor processing tool having an upper lamp including three zones, according to one embodiment. [Figure 1B] 1 is a cross-sectional view of a semiconductor processing tool having three top zones and three bottom zones according to one embodiment. [Diagram 2] FIG. 2 is a perspective view of a lamp module including three lamp zones according to one embodiment. [Figure 3A] FIG. 2 is a plan view of a lamp module including three lamp zones according to one embodiment. [Figure 3B] 3B is a plan view of the lamp module in FIG. 3A further illustrating the location of lamps for a third zone of the lamp module according to one embodiment. FIG. [Figure 3C] FIG. 3C is a cross-sectional view of the lamp module in FIG. 3B along line CC' according to one embodiment. [Figure 4A] 1 is a graph of lamp zone intensity over radius of a substrate according to one embodiment. [Figure 4B] 1 is a graph of lamp zone intensity for top and bottom lamps over the radius of a substrate according to one embodiment. [Figure 4C] 1 is a graph of lamp zone intensity for three top lamp zones and three bottom lamp zones according to one embodiment. [Diagram 5] FIG. 2 is a block diagram of an exemplary computer system that may be used with a processing tool according to one embodiment. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0009] The system described herein includes a chemical vapor deposition chamber having at least three heating zones. In the following description, numerous specific details are described to provide a thorough understanding of the embodiments. It will be apparent to one skilled in the art that the embodiments can be practiced without these specific details. In other instances, well-known aspects are not described in detail so as not to unnecessarily obscure the embodiments. Furthermore, it should be understood that the various embodiments shown in the accompanying drawings are illustrative representations and are not necessarily drawn to scale.

[0010] As mentioned above, current lamp module configurations for semiconductor manufacturing tools are generally limited to two lamp zones. While two lamp zones allow some control over temperature uniformity, it is desirable to allow even greater control over substrate temperature. Accordingly, embodiments disclosed herein include semiconductor manufacturing tools that include three or more lamp zones. For example, a lamp module can be used that focuses infrared light from multiple lamps onto three regions of an underlying substrate. For example, infrared light can be focused onto an edge region, a middle region, and a center region of the substrate. To achieve better temperature uniformity, the substrate can be on a rotatable susceptor.

[0011] In other embodiments, a multi-zone lamp module may be provided on the backside of the substrate. In some embodiments, a backside reflector may focus infrared light at an interface between zones of a frontside lamp module. For example, a backside zone may be focused at an interface between a first zone and a second zone of a frontside lamp module. In such embodiments, improved thermal uniformity across the surface of the substrate may be achieved.

[0012] In one embodiment, a multi-zone lamp module can include multiple rings extending from a base plate. As used herein, the terms "extend up," "extends up," "extend from," and "extends from" can refer to a first structure having a plane that intersects with a plane of a second structure. In some cases, the planes can be substantially orthogonal to each other, but the two planes need not be orthogonal in all cases. The first ring can be an outer ring. The second ring can be within the first ring, and the third ring can be within the second ring. Lamps can be provided between the rings. The rings and backplate can be configured to focus thermal energy from the lamps onto specific regions of the substrate (e.g., outer, middle, and center regions).

[0013] 1, a cross-sectional view of a semiconductor manufacturing tool 100 is shown, according to one embodiment. In one embodiment, the semiconductor manufacturing tool 100 (or tool 100 for short) may comprise any type of semiconductor manufacturing tool that may require precise substrate temperature control. In one embodiment, the tool 100 may be a chemical vapor deposition (CVD) tool. Other tools 100 that may be used are atomic layer deposition (ALD) tools, rapid thermal processing (RTP) tools, etc. In the illustrated embodiment, the tool 100 is shown without plasma capabilities. However, it should be appreciated that the tool 100 may also be equipped with the capability to use plasma to perform various process types.

[0014] In one embodiment, the tool 100 can include a chamber body 120. The chamber body 120 can include any suitable material, such as stainless steel. In one embodiment, a coating can be provided over an interior surface of the chamber body 120 (not shown). For example, the coating can be a chamber seasoning layer or a protective layer. In one embodiment, gas 121 can enter the tool 100 through a first portion of the chamber body 120 and gas 122 can exit the tool through a second portion of the chamber body 120. Although gases 121 and 122 are shown entering and exiting through the chamber body 120, it should be appreciated that gases can enter or exit the chamber through any portion of the tool 100 depending on the type of tool 100 used.

[0015] In one embodiment, a substrate support 115 and a susceptor 117 are provided in the tool 100. The substrate support 115 and the susceptor 117 are configured to hold and / or secure the substrate 110. For example, the substrate 110 may be a semiconductor substrate, such as a silicon wafer. The substrate 110 may have any suitable form factor. For example, the diameter of the substrate 110 may be 300 mm, 450 mm, or any standard wafer form factor. Additionally, other substrates 110 may be used in the tool 100. For example, in some embodiments, a glass substrate, a ceramic substrate, or the like may be used. In one embodiment, the substrate support 115 and the susceptor 117 may be configured to rotate. Rotation allows for improved temperature uniformity across the substrate 110.

[0016] The susceptor 117 may include any type of chuck structure for securing the substrate 110. In some embodiments, the susceptor 117 may include an electrostatic chuck (ESC) structure. In such embodiments, the substrate 110 is secured to the susceptor 117 by electrostatic forces. Other embodiments may include a vacuum chuck structure for the susceptor 117. In one embodiment, the susceptor 117 and the substrate support 115 may include a quartz material or another material that is at least substantially transparent to infrared radiation. As such, in some embodiments, the backside of the substrate 110 may also be heated.

[0017] In one embodiment, the tool 100 can include an upper enclosure 125. The upper enclosure 125 may sometimes be referred to as a lid or a chamber lid. The upper enclosure 125 can be formed from a material that is at least substantially transparent to infrared radiation. For example, the upper enclosure 125 may include quartz, or the like. In the illustrated embodiment, the upper enclosure 125 has curved surfaces and is dome-shaped. In other embodiments, the upper enclosure 125 can be substantially flat. That is, the upper enclosure 125 need not have a dome-shaped structure in some embodiments.

[0018] In one embodiment, the tool 100 may also include a bottom enclosure 127. The bottom enclosure 127 may cover a bottom surface of the tool 100. The bottom enclosure 127 may include a material that is at least substantially transparent to infrared radiation. As such, lamps on the bottom side of the tool 100 may be used to heat the bottom surface of the substrate 110. In one embodiment, the bottom enclosure 127 may be coupled to the substrate support 115. More specifically, the substrate support 115 may pass through the bottom enclosure 127. The bottom enclosure 127 is coupled to the substrate support 115 in a configuration that allows the substrate support 115 to rotate freely.

[0019] In one embodiment, the lamps 130 may be provided outside the interior volume of the tool 100, which may refer to the volume defined by the top enclosure 125, the chamber body 120, and the bottom enclosure 127. That is, the lamps 130 are not provided within the interior volume of the tool 100 where substrate processing is performed. In the illustrated embodiment, three lamps 130A-130C are provided over the top surface of the top enclosure 125. Each of the three lamps 130A-130C represents a different lamp region. That is, although a single lamp is shown for each region, it should be appreciated that each region may include multiple lamps 130.

[0020] In one embodiment, a first lamp 130A may be focused onto an outer region of the substrate 110. A second lamp 130B may be focused onto a middle region of the substrate 110, and a third lamp 130C may be focused onto a central region of the substrate 110. In the illustrated embodiment, a line from the lamp 130 to the substrate 110 depicts the perfect focusing of the infrared light onto a particular region of the substrate. However, it should be appreciated that the infrared light from the lamps 130 may overlap one another to some extent, as described in more detail below.

[0021] In the illustrated embodiment, the lamps 130 are shown to focus infrared radiation at the lamps 130 themselves; that is, the lamp module arrangement is omitted for simplicity. It should be appreciated that a lamp module arrangement may surround each of the lamps 130. The lamp module arrangement is described in more detail below.

[0022] In the illustrated embodiment, three front side lamp zones are shown, however, it should be appreciated that other embodiments may include more than two lamp zones. For example, a lamp module configuration may include four or more zones to provide more extensive control of temperature across the surface of the substrate 110.

[0023] In addition to front side infrared exposure, embodiments may also include back side heating. For example, a fourth lamp 130D and a fifth lamp 130E may be provided below the bottom enclosure 127. In the case of two back side lamps 130, the fourth lamp 130D may be focused on the outer region of the substrate 110, and the fifth lamp 130E may be focused on the central region of the substrate 110. As with the front side lamps 130A-130C, the lamp module configurations for the back side lamps 130D and 130E are omitted for simplicity.

[0024] In one embodiment, the radiation patterns of the front lamps 130A-130C can overlap with the radiation patterns of the back lamps 130D and 130E. In other embodiments, the back lamps 130D and 130E can be focused to overlap the interface between regions on the substrate. For example, the back lamp 130D can be focused on the interface between the outer region of the substrate 110 and the middle region of the substrate 110, and the back lamp 130E can be focused on the interface between the middle region of the substrate 110 and the center region of the substrate 110.

[0025] 1B, a cross-sectional view of a tool 100 according to a further embodiment is shown. In one embodiment, the tool 100 in FIG. 1B may be substantially similar to the tool 100 in the embodiment shown in FIG. 1A, except for an alternative backside lamp 130 having two sets of lamp zones (i.e., a central region on the substrate 110 and an outer region on the substrate 110). The backside lamp 130 may include more than two zones. For example, a first lamp 130D may be focused on the outer region of the substrate 110, a second lamp 130E may be focused on the middle region of the substrate 110, and a third lamp 130F may be focused on the central region of the substrate 110. In the illustrated embodiment, the focus of the backside lamp 130 approximately overlaps with the focus of the frontside lamp 130. In other embodiments, the backside lamp 130 may be focused on the interface between the upper regions of the substrate 110.

[0026] Referring now to FIG. 2, a perspective view of a lamp module 250 is shown, according to an embodiment. In an embodiment, the lamp module 250 can be used to focus light from multiple lamps onto different areas of a substrate (not shown in FIG. 2). That is, the lamp module 250 can include a reflector and one or more lamps. A lamp module may generally refer to a combination of a reflector element and a lamp element. For example, a lamp module can include one or more reflector zones and one or more lamps disposed within the one or more reflector zones. As described in more detail below, a reflector zone as used herein can be disposed between rings of reflectors. The lamp module 250 can be used on the front side of the tool 100 or on the back side of the tool 100. That is, similar to the embodiment shown in more detail above, the light from the lamp module 250 can pass through the top enclosure 125 or the bottom enclosure 127.

[0027] In one embodiment, the lamp module 250 can include a back plate 255. A number of rings can extend from the back plate 255. The combination of the contour of the back plate 255 and the shape of the rings can be used to focus the infrared light to a specific location on the substrate 110. In one embodiment, the lamp module 250 can include a material having a high reflectance of infrared radiation. For example, the reflectance of the lamp module 250 can be about 90% or more, about 95% or more, or about 98% or more. In one embodiment, the lamp module 250 can include a thin plating layer having a high infrared reflectance. For example, a gold plating film can be provided over the surface of the lamp module 250.

[0028] In one embodiment, a first ring 251 can extend up from a back plate 255. The first ring 251 can have an outer diameter substantially equal to the diameter of the back plate 255. The second ring 252 can be disposed within an inner diameter of the first ring 251. As shown, the thickness of the second ring 252 can be less than the thickness of the first ring 251. However, in other embodiments, the thickness of the first ring 251 can be substantially equal to the thickness of the second ring 252.

[0029] In one embodiment, the first lamp zone is provided between the first ring 251 and the second ring 252. For example, a plurality of first lamps 230A can be provided between the first ring 251 and the second ring 252. The first lamps 230A can be provided on the underlying back plate 255. In some embodiments, the area of ​​the back plate 255 between the first ring 251 and the second ring 252 can be contoured to focus the infrared radiation at a desired location on the substrate 110 (not shown in FIG. 2). In one embodiment, there can be 10 or more first lamps 2301 between the first ring 251 and the second ring 252. In a particular embodiment, there can be 16 first lamps 230A between the first ring 251 and the second ring 252.

[0030] In one embodiment, the third ring 253 can be disposed within an inner diameter of the second ring 252. The third ring 253 can have a thickness substantially equal to a thickness of the second ring 252. In other embodiments, the third ring 253 can have a different thickness than the second ring 252. In one embodiment, the heights of the first ring 251, the second ring 252, and the third ring 253 can be substantially uniform. In other embodiments, one or more of the first ring 251, the second ring 252, and the third ring 253 can have different heights.

[0031] In one embodiment, the second lamp zone can be provided between the second ring 252 and the third ring 253. For example, a plurality of second lamps 2302 can be provided between the second ring 252 and the third ring 253. In some embodiments, the second lamp zone can include four or more second lamps 230B. In a particular embodiment, the second lamp zone can include eight second lamps 230B.

[0032] In one embodiment, the second lamp 230B is provided between the covers 257. The covers 257 may be a portion of the lamp module 250 that covers the top surface of the third lamp (not shown in FIG. 2). The infrared light from the third lamp may propagate laterally into the region of the lamp module 250 within the third ring 253. The third ring 253 then guides the infrared light to the central region of the underlying substrate 110 (not shown in FIG. 2). That is, in some embodiments, there may be no lamps physically located within the inner diameter of the third ring 253.

[0033] 3A, a plan view of a lamp module 350 is shown, according to one embodiment. In one embodiment, the lamp module 350 can have a surface that has a high reflectivity of infrared radiation. For example, the lamp module 350 can be gold plated, or the like. In one embodiment, the lamp module 350 comprises a set of three rings extending from a circular back plate. For example, a first ring 351 is on an outer edge surface of the back plate 355, a second ring 352 is disposed within an inner diameter of the first ring 351, and a third ring 352 is disposed within an inner diameter of the second ring 352. The rings 351, 352, and 353 can be substantially similar to the rings 251, 252, and 253 described in more detail above.

[0034] In one embodiment, a plurality of first lamps 330A may be provided over the back plate 355A between the first ring 351 and the second ring 352. The orientation of the first lamps 3301 may be determined by their location around the back plate 355A. That is, the rotational orientation of each of the first lamps 330A may be different from each other. In certain embodiments, the centerline of each of the first lamps 330A may not be orthogonal to the first ring 351 and / or the second ring 352. In one embodiment, the back plate 355A may also be contoured to improve focusing of the reflected infrared radiation. For example, the back plate 355A may be curved in some embodiments. In the illustrated embodiment, a set of 14 first lamps 330A is shown. However, it should be appreciated that any number of first lamps 330A may be included according to various embodiments.

[0035] In one embodiment, a plurality of second lamps 330B may be provided between the second ring 352 and the third ring 353. The second lamps 330B may be oriented such that the centerline of each second lamp 330B is perpendicular to both the third ring 353 and the second ring 352. In one embodiment, the second lamps 330B may be provided over a back plate 355B. The back plate 355B may be contoured (not shown in FIG. 3A) to improve reflection of infrared radiation to the underlying substrate 110. In one embodiment, eight second lamps 330B are shown. However, in other embodiments, fewer or more second lamps 330B may be used.

[0036] In one embodiment, the second lamp 330B can be isolated relative to the area of ​​the backplate 355B adjacent the covers 357. For example, a pair of two covers 357 can separate the second lamp 330B on the left of the lamp module 350 from the second lamp 330B on the right of the lamp module 350. The covers 357 can cover a lamp (not shown) that directs light into the center of the third ring 353, as described in more detail below.

[0037] In one embodiment, a window 360 may be provided through the lamp module 350. In one embodiment, the window 360 may have a length greater than the width of the window 360. The elongated shape allows a sensor (not shown) to scan linearly through the lamp module. In combination with the rotating substrate 110, the sensor may provide a spatial map of sensed values. For example, the sensor may be a temperature sensor such as a pyrometer. This allows the exact temperature of the entire substrate to be determined using the window 360. In one embodiment, the window 360 may intersect one or more of the rings 351, 352, and 353. In the illustrated embodiment, the window 360 intersects the second ring 352 and the third ring 353. In other embodiments, the first ring 351 may intersect or partially intersect the window 360.

[0038] 3B, a plan view of a lamp module 350 is shown according to a further embodiment. In one embodiment, the lamp module 350 in FIG. 3B may be substantially similar to the lamp module 350 in FIG. 3A with the addition of a third lamp 330C. As shown, the third lamp 330C may be positioned between the second ring 352 and the third ring 353. As shown by the dotted line, the third lamp 330C may be provided below the cover 357. In one embodiment, a pair of the third lamps 330C are provided below each of the covers 357. However, it should be appreciated that any number of lamps may be provided below each of the covers 357. As shown on the right side of the lamp module 350, a window 360 may pass between the pair of the third lamps 330C.

[0039] As shown by the arrow coming from the third lamp 330C, the infrared radiation may be guided from under the cover 357 into a region within the third ring 353. That is, an opening may be provided through the third ring 353 to accommodate the propagation of the infrared radiation from the third lamp 330C. In one embodiment, the back plate 355C may be contoured to focus the infrared radiation onto a desired region of the underlying substrate 110. In some embodiments, the infrared radiation from the first lamp 330A may be focused onto an outer region of the substrate 110, the infrared radiation from the second lamp 330B may be focused onto a middle region of the substrate 110, and the infrared radiation from the third lamp 330C may be focused onto a central region of the substrate 110.

[0040] 3C, a cross-sectional view of the lamp module 350 in FIG. 3B along line CC' is shown, according to one embodiment. In addition to the lamp module 350, a susceptor 317 and a substrate 310 are shown below the lamp module 350. In one embodiment, an enclosure may also be provided between the lamp module 350 and the substrate 310 (not shown). The susceptor 317 and substrate 310 may be rotated, as indicated by the curved arrow around the susceptor 317.

[0041] In one embodiment, the lamp module 350 can include a back plate 355. As shown, a number of rings extend from the back plate 355. A first ring 351 is around the periphery of the back plate 355. A second ring 352 and a third ring 353 are also provided in the lamp module 350. In the illustrated embodiment, only the left side of the second ring 352 and the third ring 353 are shown because a window 360 passes through the opposite ends of the rings 352 and 353. In one embodiment, a cover 357 is provided over the back plate 355 between the second ring 352 and the third ring 353. A first lamp 330A is shown in the lamp module 350. It should be appreciated that a second lamp 330B and a third lamp 330C are provided outside the plane illustrated in FIG. 3C.

[0042] In one embodiment, the sensor 361 can be configured to be inserted through the window 360. The sensor 361 can be a temperature sensor such as a pyrometer. In one embodiment, the sensor 361 is configured to scan across the rotating substrate 310, as indicated by the double arrow adjacent to the sensor 361. By rotating the substrate 310 and linearly scanning the sensor 361, a map of the entire surface of the substrate 310 can be provided. The temperature information from the sensor 361 can be used as a feedback signal to control the power of the first lamp 330A, the second lamp 330B, and the third lamp 330C.

[0043] 3A-3C, the lamp module 350 is configured to be an upper lamp module, i.e., infrared radiation from the lamps 330 passes through the top enclosure 125 of the tool 100. Of course, it should be appreciated that a similar lamp module 350 can be used to expose a bottom surface of a substrate to infrared radiation, i.e., the lamp module 350 can be configured to emit infrared radiation through the bottom enclosure 127 of the tool 100.

[0044] 4A, a graph of lamp intensity across the radius of a substrate is shown, according to one embodiment. As shown, there are three peaks 440A-C. Each peak can correspond to one zone of the lamp module. For example, peak 440A can be in the outer region of the substrate, peak 440B can be in the middle region of the substrate, and peak 440C can be in the center region of the substrate. In one embodiment, peaks 440A-C can partially overlap one another. The overlapping nature of peaks 440A-C can result in a smoother temperature profile. However, it should be appreciated that a completely flat profile across the radius of the substrate may not be possible with just the top lamp module.

[0045] Thus, embodiments disclosed herein can include a bottom lamp module that also provides infrared radiation to the substrate from the backside. In certain embodiments, the bottom lamp module can emit infrared radiation that is complementary to the top peaks 440A-C. An example of one such complementary peak is shown in FIG. 4B.

[0046] 4B, a fourth peak 440D and a fifth peak 440E are shown. The fourth peak 440D may be located between the first peak 440A and the second peak 440B, and the fifth peak 440E may be located between the second peak 440B and the third peak 440C. Thus, the temperature drop at the interface between the regions can be accommodated by backside illumination.

[0047] In Fig. 4C, a similar graph of intensity over the radius of the substrate is shown according to an additional embodiment. Instead of having a backside lamp module with two zones, the backside lamp module is provided with three zones. In such an embodiment, the fourth peak 440D may be outside the first peak 440A, the fifth peak 440E may be between the first peak 440A and the second peak 440B, and the sixth peak 440F may be between the second peak 440B and the third peak 440C.

[0048] The computer system 500 may include a computer program product or software 522 having a non-transitory machine-readable medium having stored thereon instructions that can be used to program the computer system 500 (or other electronic devices) to perform processes according to the embodiments. A machine-readable medium includes any mechanism for storing or transmitting in a form readable by a machine (e.g., a computer). For example, machine-readable (e.g., computer-readable) media may include machine (e.g., computer) readable storage media (e.g., read-only memory (ROM), random access memory (RAM), magnetic disk storage media, optical storage media, flash memory devices, etc.), machine (e.g., computer) readable transmission media (electrical, optical, acoustic, or other forms of propagated signals (e.g., infrared signals, digital signals, etc.)), and the like.

[0049] In one embodiment, computer system 500 includes a system processor 502, a main memory 504 (e.g., read only memory (ROM), flash memory, dynamic random access memory (DRAM), such as synchronous DRAM (SDRAM) or Rambus DRAM (RDRAM)), a static memory 506 (e.g., flash memory, static random access memory (SRAM), etc.), and a secondary memory 518 (e.g., a data storage device), which communicate with each other via a bus 530.

[0050] The system processor 502 represents one or more general-purpose processing devices, such as a microsystem processor, a central processing unit, etc. More specifically, the system processor may be a multiple instruction set computing (CISC) microsystem processor, a reduced instruction set computing (RISC) microsystem processor, a very long instruction word (VLIW) microsystem processor, a system processor implementing other instruction sets, or a combination of instruction sets. The system processor 502 may also be one or more special-purpose processing devices, such as an application specific integrated circuit (ASIC), a field programmable gate array (FPGA), a digital signal system processor (DSP), a network system processor, etc. The system processor 502 is configured to execute processing logic 526 for performing the operations described herein.

[0051] The computer system 500 may further include a system network interface device 508 for communicating with other devices or machines. The computer system 500 may also include a video display unit 510 (e.g., a liquid crystal display (LCD), a light emitting diode display (LED), or a cathode ray tube (CRT)), an alphanumeric input device 512 (e.g., a keyboard), a cursor control device 514 (e.g., a mouse), and a signal generating device 516 (e.g., a speaker).

[0052] The secondary memory 518 may include a machine-accessible storage medium 532 (or more specifically, a computer-readable storage medium) on which is stored one or more sets of instructions (e.g., software 522) embodying any one or more of the methods or functions described herein. The software 522 may also reside, completely or at least partially, within the main memory 504 and / or the system processor 502 during its execution by the computer system 500, with the main memory 504 and the system processor 502 also constituting machine-readable storage media. The software 522 may further be transmitted and received over the network 520 via a system network interface device 508. In one embodiment, the network interface device 508 may operate using RF, optical, acoustic, or inductive coupling.

[0053] While the machine-accessible storage medium 532 is shown to be a single medium in the exemplary embodiment, the term "machine-readable storage medium" should be taken to include a single medium or multiple media (e.g., a centralized or distributed database and / or associated caches and servers) that store one or more sets of instructions. The term "machine-readable storage medium" should also be taken to include any medium capable of storing or encoding a set of instructions for execution by a machine and that cause the machine to perform any one or more of the methods. Thus, the term "machine-readable storage medium" should be taken to include, but not limited to, solid-state memories and optical and magnetic media.

[0054] In the above specification, certain exemplary embodiments have been described. It will be apparent that various modifications thereto can be made without departing from the scope of the following claims. The specification and drawings are therefore to be regarded in an illustrative rather than a restrictive sense.

Claims

1. 1. A lamp module for a semiconductor processing chamber, comprising: A back panel and a first ring extending from the back plate; a second ring extending from the back plate; a third ring extending from the back plate; a first plurality of lamps between the first ring and the second ring; a second plurality of lamps between the second ring and the third ring; a third plurality of lamps configured to emit infrared radiation that propagates into the third ring; and A lamp module comprising:

2. 10. The lamp module of claim 1, wherein the first plurality of lamps are oriented to illuminate an outer area of ​​a substrate positioned below the lamp module.

3. 10. The lamp module of claim 1, wherein the second plurality of lamps are oriented to illuminate an intermediate region of a substrate positioned below the lamp module.

4. 2. The lamp module of claim 1, wherein the third plurality of lamps are oriented to illuminate a central region of a substrate positioned below the lamp module.

5. 10. The lamp module of claim 1 configured for use in a chemical vapor deposition (CVD) chamber.

6. 2. The lamp module of claim 1, wherein the first plurality of lamps, the second plurality of lamps, and the third plurality of lamps are provided on the back plate.

7. 7. The lamp module of claim 6, wherein the backplate is configured to reflect light from the first plurality of lamps, the second plurality of lamps, and the third plurality of lamps away from the lamp module.

8. A window through the back plate The lamp module of claim 1 further comprising:

9. 9. The lamp module of claim 8, wherein the window passes through at least one of the second ring and the third ring.

10. 9. The lamp module of claim 8, wherein a pyrometer is positioned in the window, the pyrometer configured to scan laterally through the window.

11. a pedestal having a first surface and a second surface for supporting a substrate; a first enclosure facing the first surface of the pedestal; a second enclosure facing the second surface of the pedestal; and a first lamp module outside the first enclosure and the second enclosure, the first lamp module comprising three or more heating zones; a second lamp module on an opposite side of the first lamp module and outside the first and second enclosures, the second lamp module comprising a plurality of heating zones; A semiconductor processing tool comprising:

12. The three or more heating zones are a first zone for heating an outer region of a substrate disposed on the pedestal; a second zone for heating an intermediate region of the substrate disposed on the pedestal; a third zone for heating a central region of the substrate disposed on the pedestal; The semiconductor processing tool of claim 11 , comprising:

13. The semiconductor processing tool of claim 12 , wherein the plurality of heating zones on the second lamp module are directed to heat a backside of the substrate disposed on the pedestal.

14. The plurality of heating zones on the second lamp module include: a fourth heating zone configured to heat the substrate at an interface between the first zone and the second zone; and a fifth heating zone configured to heat the substrate at an interface between the second zone and the third zone; and The semiconductor processing tool of claim 13 , comprising:

15. The semiconductor processing tool of claim 11 , wherein the first enclosure and the second enclosure comprise quartz.

16. The semiconductor processing tool of claim 11 , wherein the pedestal is configured to rotate.

17. The semiconductor processing tool of claim 11 , wherein the semiconductor processing tool is a chemical vapor deposition (CVD) processing tool.

18. 1. A lamp module for a semiconductor processing chamber, comprising: A back panel and a plurality of lamp zones separated from one another by rings extending from the back plate; a plurality of lamps positioned within each of the plurality of lamp zones; A lamp module comprising:

19. 20. The lamp module of claim 18, wherein a first plurality of lamps are directed to irradiate an outer zone of a substrate positioned below the lamp module, a second plurality of lamps are directed to irradiate an intermediate zone of the substrate positioned below the lamp module, and a third plurality of lamps are directed to irradiate a central zone of the substrate positioned below the lamp module.

20. 20. The lamp module of claim 18 configured for use in a chemical vapor deposition (CVD) processing tool.

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