Low-content PcBN grade with a high metal content in the binder

Abstract

A polycrystalline cubic boron nitride (PcBN) composition is provided that includes a cBN hard phase of about 60 volume % to about 80 volume % based on the total volume of the PcBN composition and a ceramic binder phase of about 20 volume % to about 40 volume % based on the total volume of the PcBN composition. The ceramic binder phase includes an AlN phase, an Al2O3 phase, at least one Co(x)W(y)B(z) phase, and a stoichiometric (ss) titanium nitride (TiN), titanium carbonitride (TiCN), or a combination of TiN and TiCN. A sintered PPcBN compact, a cutting tool, and a related manufacturing method of the compact manufactured using the PcBN composition are further presented.

Description

Technical Field

[0001] The present disclosure relates to a polycrystalline cubic boron nitride (PcBN) composition having a ceramic binder with a high metal content. The present application further relates to a sintered PcBN compact, a cutting tool, and related methods for manufacturing the compact, which include the PcBN composition.

Background Art

[0002] Cubic boron nitride (cBN) is an ultra-abrasive hard material and is often associated with the formation of BN compacts for cutting applications and / or machining applications. Certain ceramic materials such as alumina (Al2O3), titanium nitride (TiN), titanium carbide (TiC), titanium carbonitride (TiCN), silicon nitride (Si3N4), etc. can be blended with cBN and further processed to improve the resistance of cBN to physical wear and cracking. However, such ceramic materials may not have sufficient fracture toughness, hardness, and / or heat resistance to function optimally when machining hard materials. Furthermore, existing PcBN-based compacts used for manufacturing cutting tools may still exhibit rapid wear and cracking, followed by subsequent chipping.

[0003] In the turning of hard parts, in particular, in order to prevent tool breakage during interrupted cutting, it is necessary to improve fracture toughness. Unreacted tungsten carbide (WC) particles generated during grinding can function as crack propagation paths. Conventional PcBN compacts containing one or more of stoichiometric (ss) TiN, TiCN, AlN, and Al2O3 usually have a sintered structure composed of a ceramic bonding phase consisting of cBN particles, TiN, and TiCN particles, and Al2O3 embedded and fixed in a TiN and TiCN ceramic bonding phase matrix. Al2O3 is generally found as small isolated spots within the TiN and TiCN ceramic bonding phase matrix, or sometimes adjacent to cBN particles. In the microstructure, small white WC-Co islands or particles can often also be seen. This is usually present as a by-product of the grinding body, called mill debris in metallurgy. Fracture toughness can be increased by converting WC mill debris into a tougher phase by chemical reaction with added Co. Nevertheless, a good ceramic bonding phase plays an important role in achieving consistent operable performance and usually requires active grinding of the ceramic binder to reach the optimal target particle size.

[0004] To produce the PcBN material used in tool manufacturing, cBN powder can usually first be mixed with the base material of the ceramic binder by forming a grinding slurry composition of the mixed components with a grinding liquid (e.g., water, solvent, alcohol, or any mixture thereof). Subsequently, for example, usually with any of a ball mill, an attritor mill, or a planetary mill, the composition is generally mixed for several hours to form a grinding slurry blend.

[0005] Thereafter, the grinding slurry blend may be subjected to, for example, vacuum drying, air drying, freeze drying, or spray drying, and the powder blend is then subjected to a high-pressure high-temperature (HPHT) sintering and solidification operation.

[0006] The central motivation for the grinding operation is to promote a good ceramic binder distribution and good wettability between the cBN powder and the ceramic binder powder components. Importantly, adjusting the mixing components to suit the grinding operation is fundamental and key to strengthening the physical soundness of the ground components.

[0007] Desirable ceramic binder distribution and good wettability quality are essential parameters for obtaining PcBN-based tools that do not break when cutting or machining ferrous metals, for example. As a drawback, when the distribution and wettability of the ceramic binder are considerably inferior to the standards and quality, pores and cracks may unnecessarily occur as a result of the sensitivity of the final sintered PcBN body, which is harmful to the manufactured PcBN compact.

[0008] Therefore, in view of the above, there is a need for a PcBN composition with enhanced physical properties to manufacture robust and high-quality tools with excellent performance for cutting and machining difficult-to-cut materials.

Summary of the Invention

[0009] A polycrystalline cubic boron nitride (PcBN) composition is provided. The PcBN composition contains a cBN hard phase of about 60 vol% to about 80 vol% based on the total volume of the PcBN composition. Further, the composition has a ceramic binder phase of about 20 vol% to about 40 vol% based on the total volume of the PcBN composition. The ceramic binder phase includes an AlN phase, an Al2O3 phase, and at least one tough Co(x)W(y)B(z) phase.

[0010] Optionally, the ceramic binder phase includes stoichiometric (ss) titanium nitride (TiN), titanium carbonitride (TiCN), or a combination thereof.

[0011] Optionally, the ceramic binder phase includes stoichiometric or near-stoichiometric TiNO, TiCNO, or a combination thereof.

[0012] Optionally, the cBN particles have a particle size in the range of about 3 microns to about 6 microns.

[0013] Optionally, the cBN particles have a particle size in the range of about 2 microns to about 4 microns.

[0014] Optionally, the Co particles have a particle size in the range of about 0.1 micron to about 1 micron.

[0015] Optionally, the tungsten carbide (WC) particles have a particle size in the range of about 0.1 micron to about 1 micron.

[0016] Optionally, (x) is 1, (y) is 2, (z) is 2, and at least one Co(x)W(y)B(z) toughening phase contains CoW2B2.

[0017] Optionally, (x) is 1, (y) is 1, (z) is 1, and at least one Co(x)W(y)B(z) toughening phase contains CoWB.

[0018] Optionally, based on the total weight of the PcBN composition, the amount of aluminum is in the range of about 3 wt% to about 6 wt%, the amount of cobalt is in the range of about 0.9 wt% to about 2.5 wt%, and the amount of tungsten is in the range of about 5 wt% to about 8 wt%.

[0019] Furthermore, a method for manufacturing a sintered polycrystalline cubic boron nitride (PcBN) compact is provided, which includes pulverizing a powder mixture containing (i) a cBN hard phase of about 60 vol% to about 80 vol% based on the total volume of the powder mixture and (ii) a powder for forming a hard component of a ceramic binding phase of about 20 vol% to about 40 vol% based on the total volume of the powder mixture with a pulverizer containing at least tungsten carbide (WC) therein to form a powder blend, generating mill debris. Next, the formed powder mixture is dried. Finally, the components of the powder blend are reacted under high pressure and high temperature (HPHT) conditions to form an AlN phase, an Al2O3 phase, and at least one tough Co(x)W(y)B(z) phase in the ceramic binding phase.

[0020] Optionally, drying of the powder blend includes vacuum drying, air drying, freeze drying, or spray drying.

[0021] Optionally, milling is carried out using one or more solvents including ethanol, methanol, isopropanol, butanol, cyclohexanol, acetone, hexane, heptane, toluene, water, or any combination thereof as a milling slurry of the powder blend.

[0022] Optionally, the HPHT conditions include a pressure in the range of about 4 gigapascals (GPa) to about 8 GPa and a temperature in the range of about 1100 °C to about 1800 °C.

[0023] Optionally, after drying the powder blend, the powder blend is introduced into a heat-resistant metal cup.

[0024] Furthermore, a cutting tool incorporating the PcBN composition is provided.

[0025] Moreover, a compact incorporating the PcBN composition is provided.

[0026] Other systems, methods, features and advantages will be apparent to, or will become apparent to, those skilled in the art upon examination of the following figures and detailed description. All such additional systems, methods, features and advantages are intended to be included within this specification, are within the scope of the present disclosure, and are intended to be protected by the following claims. Nothing in this section shall be construed as a limitation upon the claims. Further aspects and advantages are described below in connection with embodiments of the present disclosure. It is to be understood that both the foregoing general description and the following detailed description of the present disclosure are exemplary and explanatory and are intended to provide further explanation of the disclosure as claimed.

[0027] The accompanying drawings, which are included to provide a further understanding of the subject matter and are incorporated in and constitute a part of this specification, illustrate embodiments of the subject matter and together with the description serve to explain the principles of the disclosure.

Brief Description of the Drawings

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DETAILED DESCRIPTION OF THE INVENTION

[0029] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which the presently described subject matter pertains.

[0030] When ranges of values, such as concentration ranges, percentage ranges, or ratio ranges, are provided, each intervening value, to one-tenth of the unit of the lower limit, between the upper and lower limits of the range, and any other recited value or intervening value within the recited range, is understood to be encompassed within the described subject matter, unless the context clearly dictates otherwise. The upper and lower limits of these narrower ranges may independently be included in the narrower ranges, and such embodiments are also encompassed within the described subject matter, subject to any specifically excluded limits within the recited range. When the recited range includes one or both of the limits, ranges excluding one or both of those included limits are also included in the described subject matter.

[0031] The following definitions define the parameters of the described subject matter.

[0032] As used in the specification of the present disclosure, the term "mild debris" generally refers to at least WC material formed from the grinding medium or the lining of the mill due to friction between cBN abrasive particles, pulverized bodies, and the pulverized lining. There are many factors that can determine the amount of mild debris that can be generated, and for example, it may include at least the volume and density of the grinding medium, the size of the jar, and the viscosity of the grinding slurry. Mild debris usually increases proportionally to the grinding time, cBN particle size, and mill grinding speed. When cBN particles are present in the mill, since the cBN particles are considerably harder and more rigid than the cemented WC particles, a considerable amount of mild debris can naturally be generated. WC particles are added to the blend for further processing by scraping, shaving, or wearing away WC particles from the cemented WC grinding medium. Thus, one method for measuring the particle size of WC obtained from mild debris is to employ a scanning electron microscope (SEM) image. This is actually done by measuring a size called the Feret diameter. Those skilled in the art will know that in order to determine the Feret diameter, a rectangle that completely surrounds the WC particles is first drawn. The length of the long side of the rectangle is the maximum Feret diameter. The length of the short side of the rectangle is the minimum Feret diameter. In this way, from a plurality of SEM images, the average maximum Feret diameter and the average minimum Feret diameter of the WC particles obtained from mild debris can be calculated, and finally, the particle size of the WC particles obtained from mild debris can be determined.

[0033] As used in the specification of the present disclosure, the term "PcBN compact" refers to a sintered product composed of a mass in which a plurality of wear-resistant superabrasive cBN particles are compressed, bonded, and accumulated in any of a self-bonding relationship, a bonding relationship by a bonding medium, or a combination of these bonding relationships. As used in the specification of the present disclosure, the term "PcBN composite compact" refers to a PcBN compact supported on a cemented WC substrate.

[0034] As used in the specification of the present disclosure, the term "particle" refers to discrete objects or a plurality of discrete objects. As used in the specification of the present disclosure, the term "particle" is also regarded as a crystal or a grain.

[0035] As used in the specification of the present disclosure, the terms "volume %" or "weight %" refer to a given volume percentage or weight percentage with respect to (I) the total volume or total weight of the PcBN composition, (II) the total volume of the powder mixture, or (III) the total weight of the PcBN compact, unless otherwise specified. When "volume %" or "weight %" is referred to in the present disclosure or the appended claims, it is also explicitly mentioned which volume percentage of (I), (II), or (III) it refers to in each given specific scenario.

[0036] Grades can be classified, for example, according to particle size. Different types of grades for different types of materials are defined as nano, ultrafine, submicron, fine, medium fine, medium coarse, coarse, and extra coarse. As used in the specification of the present disclosure, the term (I) "nano grade" is defined as a component of the CBN composition having a particle size of less than about 0.2 microns, (II) "ultrafine grade" is defined as a component of the CBN composition having a particle size of about 0.2 microns to about 0.5 microns, (III) "submicron grade" is defined as a component of the CBN composition having a particle size of about 0.5 microns to about 0.9 microns, (IV) "fine grade" is defined as a component of the CBN composition having a particle size of about 1.0 microns to about 1.3 microns, (V) "medium grade" is defined as a component of the CBN composition having a particle size of about 1.4 microns to about 2.0 microns, (VI) "medium coarse grade" is defined as a component of the CBN composition having a particle size of about 2.1 microns to about 3.4 microns, (VII) "coarse grade" is defined as a component of the CBN composition having a particle size of about 3.5 microns to about 5.0 microns, and (VIII) "extra coarse grade" is defined as a component of the CBN composition having a particle size greater than about 5.0 microns.

[0037] As used in the specification of the present disclosure, the term "ultra-polished superhard material" or simply "ultra-polished material" refers to a polishing material that exhibits excellent hardness and wear resistance and may exhibit a Knoop indentation hardness exceeding 2000, and is found in, but not limited to, single crystal diamond, polycrystalline diamond (PCD), thermally stable polycrystalline diamond, chemical vapor deposition (CVD) diamond, metal matrix diamond composites, ceramic matrix diamond composites, nanodiamond, cubic boron nitride (cBN), polycrystalline cubic boron nitride (PcBN), or any combination thereof. The term "abrasive" as used herein refers to any material used to wear away a softer material.

[0038] As used in the specification of the present disclosure, the term "about" means plus or minus 5% of the numerical values used in the claims and the present disclosure. Thus, "about" can be used to provide flexibility at the endpoints of a numerical range, and a given value may be "above" or "below" that given value. Thus, for example, a value of 50% can be, for example, 47.5% - 52.25%, 47.5% - 52.5%, 47.75% - 50%, 50% - 52.5%, 48% - 48.5%, 48% - 48.75%, 48% - 49%, 48% - 49.5%, 48% - 49.75%, 48% - 50%, 48% - 50.25%, 48% - 50.5%, 48% - 50.75%, 48% - 51%, 48% - 51.5%, 48% - 51.75%, 48% - 52%, 48% - 52.25%, 48% - 52.5%, 48.25% - 48.5%, 48.25% - 48.75%, 48.25% - 49%, 48.25% - 49.5%, 48.25% - 49.75%, 48.25% - 50%, 48.25% - 50.25%, 48.25% - 50.5%, 48.25% - 50.75%, 48.25% - 51%, 48.25% - 51.25%, 48.25% - 51.5%, 48.25% - 51.75%, 48.25% - 52%, 48.25% - 52.25%, 48.25% - 52.5%, 48.5% - 48.75%, 48.5% - 49%, 48.5% - 49.5%, 48.5% - 49.75%, 48.5% - 50%, 48.5% - 50.25%, 48.5% - 50.5%, 48.5% - 50.75%, 48.5% - 51%, 48.5% - 51.25%, 48.5% - 51.5%, 48.5% - 51.75%, 48.5% - 52%, 48.5% - 52.25%, 48.5% - 52.5%, 49% - 49.25%, 49% - 49.5%, 49% - 49.75%, 49% - 50%, 49% - 50.25%, 49% - 50.5%, 49% - 50.75%, 49% - 51%, 49% - 51.25%, 49% - 51.5%, 49% - 51.75%, 49% - 52%, 49% - 52.25%, 49% - 52.5% 49.5% - 49.75%, 49.5% - 50%, 49.5% - 50.25%, 49.5% - 50.5%, 49.5% - 50.75%, 49.5% - 51%, 49.5% - 51.5%, 49.5% - 51.75%, 49.5% - 52%, 49.5% - 52.25%, 49.Ranges that can be defined by ranges such as 5% to 52.5%, 49.75% to 50%, 49.75% to 50.25%, 49.75% to 50.5%, 49.75% to 50.75%, 49.75% to 51%, 49.75% to 51.25%, 49.75% to 51.5%, 49.75% to 51.75%, 49.75% to 52%, 49.75% to 52.25%, 49.75% to 52.5%, 50% to 50.25%, 50% to 50.5%, 50% to 50.75%, 50% to 51%, 50% to 51.25%, 50% to 51.5%, 50% to 52%, 50% to 52.25%, 50% to 52.5% may be intended to be included.

[0039] As used throughout this disclosure, the term "generally" has the meaning of "usually", "close to", or "in the vicinity or within the range of".

[0040] As used herein, the term "substantially" refers to the complete or almost complete range or degree of an action, characteristic, property, state, structure, item, or result.

[0041] As used herein, "spherical" refers to particles having a substantially "round" shape.

[0042] As used in the specification of the present disclosure, the term "fracture toughness" refers to the ability of a material to withstand crushing and / or crack propagation.

[0043] As used in the specification of the present disclosure, the term "high pressure high temperature (HPHT) sintering" generally refers to a process of heating under a pressure in the range of about 4 gigapascals (GPa) to about 8 GPa to minimize the surface area of a cBN-based particle system. This process is related to the formation of bonds between adjacent small cBN particles or cBN grains and the subsequent shrinkage of the aggregated cBN particles or cBN grains. By heating small cBN particles under pressure, the compression formation of a high-density bulk mass is carried out. Atoms in the small cBN particles diffuse across the boundaries of the cBN particles to fuse the small cBN particles together, thereby forming one solid high-density bulk piece.

[0044] Polycrystalline cubic boron nitride (PcBN) composition This disclosure is premised on presenting a polycrystalline cubic boron nitride (PcBN) composition, where the cBN hard phase reacts with a high level of metallic content of aluminum (Al), cobalt (Co), and tungsten (W) present within a ceramic binder phase. The ceramic binder is composed of stoichiometric (ss) titanium nitride (TiN), titanium carbonitride (TiCN), or a combination thereof, i.e., the ratio N / Ti or CN / Ti is substantially less than 1. The ceramic binder in the PcBN composition exhibits an improvement in fracture toughness by the reaction of Co in the ceramic binder with additional mill debris having tungsten carbide (WC) particles therein, at least. Without wishing to be bound by theory, unreacted WC particles (i.e., mill debris) generated during grinding have been assumed to function as crack propagation paths. The reader will understand that there are at least multiple advantages over simply adding a WC-containing powder. As a first issue, the mill debris is uniformly dispersed throughout the blend to which the mill debris is added. Secondly, the mill debris is very fine, typically less than about 1 micron. In fact, procuring, safely handling, and dispersing submicron powders is a rather difficult task in this problem, and thus the current subject matter seeks to avoid such issues. During high-pressure high-temperature (HPHT) sintering, Co in the ceramic binder reacts with WC particles obtained from the mill debris and boron in the cBN as described in paragraph ¶

[0046] , thereby forming at least one distinct tough Co(x)W(y)B(z) phase in the ceramic binder, and the cobalt no longer functions as a binder but instead functions as a hard phase. In other words, the cobalt in at least one tough Co(x)W(y)B(z) phase is no longer a metal. In one example, (x) is 1, (y) is 2, and (z) is 2, and at least one Co(x)W(y)B(z) tough phase includes CoW2B2. In another example, (x) is 1, (y) is 1, and (z) is 1, and at least one Co(x)W(y)B(z) tough phase includes CoWB. The individual phases further formed in the ceramic binder are at least an AlN phase and an Al2O3 phase. The mill body consists of 94 wt% WC and 6 wt% Co.Mild debris has the same composition as the pulverized body, namely 94 wt% WC and 6 wt% Co. However, generally, a cobalt content of 6 wt% is insufficient to form the tough CoW2B2 phase described above. Therefore, usually additional metallic cobalt is added to the grinding slurry. The carbon removed from WC is instead incorporated into the TiN / TiCN matrix of the ceramic binder.

[0045] The cBN hard phase can typically be present in an amount of about 60% to about 80% by volume based on the total volume of the PcBN composition. In some examples, the cBN hard phase is present in an amount of about 62% to about 80% by volume based on the total volume of the PcBN composition. In other examples, the cBN hard phase is present in an amount of about 65% to about 80% by volume based on the total volume of the PcBN composition. In still other examples, the cBN hard phase is present in an amount of about 67% to about 80% by volume based on the total volume of the PcBN composition. In yet other examples, the cBN hard phase is present in an amount of about 69% to about 80% by volume based on the total volume of the PcBN composition. In even other examples, the cBN hard phase is present in an amount of about 71% to about 80% by volume based on the total volume of the PcBN composition. In other examples, the cBN hard phase is present in an amount of about 73% to about 80% by volume based on the total volume of the PcBN composition. In other embodiments, the cBN hard phase is present in an amount of about 75% to about 80% by volume based on the total volume of the PcBN composition. In still other embodiments, the cBN hard phase is present in an amount of about 77% to about 80% by volume based on the total volume of the PcBN composition. In even other embodiments, the cBN hard phase is present in an amount of about 78% to about 80% by volume based on the total volume of the PcBN composition.

[0046] The cBN hard phase may also be present in an amount of about 60% to about 62% by volume, 60% to about 65% by volume, about 62% to about 65% by volume, about 65% to about 67% by volume, about 60% to about 67% by weight, about 60% to about 70% by weight, about 60% to about 72% by weight, about 60% to about 75% by weight, about 67% to about 69% by volume, about 69% to about 71% by volume, about 71% to about 73% by volume, about 67% to about 73% by volume, about 67% to about 75% by volume, about 67% to about 77% by volume, about 70% to about 75% by volume, about 70% to about 77% by volume, about 70% to about 79% by volume, about 73% to about 75% by volume, about 73% to about 77% by volume, or about 75% to about 77% by volume, based on the total volume of the PcBN composition.

[0047] The ceramic binder described in the specification of the present disclosure may generally be composed of at least one metal carbide, boride, nitride, carbonitride, or oxide selected from Group 4, Group 5, and Group 6 of the periodic table, or any combination thereof.

[0048] In certain embodiments, the ceramic binder is composed of stoichiometric (ss) TiN, TiCN, or a combination thereof. Without wishing to be bound by any particular theory, Ti-containing binders (e.g., TiN, TiCN) can function as ceramic binders and are generally thought to have a similar effect in improving the cutting ability of tools formed by compacts. In still other embodiments, the ceramic binder is composed of stoichiometric or non-stoichiometric TiNO, TiCNO, or a combination thereof.

[0049] The ceramic binder and grain growth inhibitor during sintering, such as vanadium carbide (VC), chromium carbide (Cr3C2), tantalum carbide (TaC), titanium carbide (TiC), zirconium carbide (ZrC), niobium carbide (NbC), etc., may be present in the PcBN composition in any possible combination that is compatible with and does not conflict with the objectives of the present subject matter.

[0050] The ceramic bonding phase can typically be present in an amount of about 20% to about 40% by volume based on the total volume of the PcBN composition. In some examples, the ceramic bonding phase is present in an amount of about 22% to about 40% by volume based on the total volume of the PcBN composition. In other examples, the ceramic bonding phase is present in an amount of about 24% to about 40% by volume based on the total volume of the PcBN composition. In still other examples, the ceramic bonding phase is present in an amount of about 26% to about 40% by volume based on the total volume of the PcBN composition. In yet other examples, the ceramic bonding phase is present in an amount of about 28% to about 40% by volume based on the total volume of the PcBN composition. In still further examples, the ceramic bonding phase is present in an amount of about 30% to about 40% by volume based on the total volume of the PcBN composition. In yet further examples, the ceramic bonding phase is present in an amount of about 32% to about 40% by volume based on the total volume of the PcBN composition. In other embodiments, the ceramic bonding phase is present in an amount of about 34% to about 40% by volume based on the total volume of the PcBN composition. In still further embodiments, the ceramic bonding phase is present in an amount of about 36% to about 40% by volume based on the total volume of the PcBN composition. In yet further embodiments, the ceramic bonding phase is present in an amount of about 38% to about 40% by volume based on the total volume of the PcBN composition.

[0051] The ceramic bonding phase can also be present in an amount of about 20% to about 22%, about 22% to about 24%, about 24% to about 26%, about 26% to about 28%, about 20% to about 25%, about 20% to about 26%, about 20% to about 27%, about 20% to about 28%, about 20% to about 29%, about 20% to about 30%, about 25% to about 30%, 26% to about 30%, about 27% to about 30%, about 28% to about 30%, about 29% to about 30%, about 30% to about 32%, about 30% to about 35%, about 30% to about 37%, about 32% to about 34%, about 32% to about 35%, about 34% to about 36%, about 36% to about 38%, about 35% to about 40%, or about 38% to about 40% by volume based on the total volume of the PcBN composition.

[0052] The grain growth inhibitor can typically be present in an amount of about 1% to about 2% by volume, 1% to about 3% by volume, about 2% to about 5% by volume, about 5% to about 7% by volume, about 3% to about 7% by volume, about 7% to about 10% by volume, about 10.1% by volume, about 10.2% by volume, about 10.3% by volume, about 10.4% by volume, about 10.5% by volume, about 10.6% by volume, about 10.7% by volume, about 10.8% by volume, about 10.9% by volume, about 7% to about 20% by volume, about 10% to about 20% by volume, about 12% to about 20% by volume, about 15% to about 20% by volume, about 17% to about 20% by volume, about 10% to about 12% by volume, about 10% to about 15% by volume, about 10% to about 17% by volume, about 10% to 20% by volume, about 15% to about 20% by volume, or about 17% to about 20% by volume, based on the total volume of the PcBN composition.

[0053] The cBN particles can typically have a particle size in the range of about 2 microns to about 4 microns, or a particle size in the range of about 3 microns to about 6 microns. In some examples, the cBN particles have a particle size of about 2.5 microns to about 4 microns. In other examples, the cBN particles have a particle size of about 3 microns to about 4 microns. In still other examples, the cBN particles have a particle size of about 3.5 microns to about 4 microns. In yet other examples, the cBN particles have a particle size of about 3.5 microns to about 6 microns. In further other examples, the cBN particles have a particle size of about 4 microns to about 6 microns. In even further other examples, the cBN particles have a particle size of about 4.5 microns to about 6 microns. In still further other examples, the cBN particles have a particle size of about 5 microns to about 6 microns. In other embodiments, the cBN particles have a particle size of about 5.5 microns to about 6 microns.

[0054] The cBN particles are also in the range of about 2 microns to about 2.25 microns, about 2 microns to about 2.5 microns, about 2 microns to about 2.75 microns, about 2 microns to about 3 microns, about 2 microns to about 3.25 microns, about 2 microns to about 3.5 microns, about 2 microns to about 3.75 microns, about 2.5 microns to about 2.75 microns, about 2.5 microns to about 3 microns, about 2.5 microns to about 3.25 microns, 2.5 microns to about 3.5 microns, about 2.5 microns to about 3.75 microns, about 2.25 microns to about 2.5 microns, about 2.25 microns to about 2.75 microns, about 2.25 microns to about 3 microns, about 2.25 microns to about 3.25 microns, about 2.25 microns to about 3.5 microns, about 2.25 microns to about 3.75 microns, about 2.25 microns to about 4 microns, about 2.5 microns to about 3.25 microns, about 2.75 microns to about 3.25 microns, about 2.75 microns to about 3.5 microns, about 3 microns to about 3.25 microns, about 3 microns to about 3.5 microns, about 2.75 microns to about 3.75 microns, about 3 microns to about 3.5 microns, about 3 microns to about 3.75 microns, about 2.5 microns to about 4 microns, about 2.75 microns to about 4 microns, about 3.25 microns to about 4 microns, about 3.5 microns to about 4 microns, about 3.75 microns to about 4 microns, about 3 microns to about 4.25 microns, about 3 microns to about 4.5 microns, about 3 microns to about 4.75 microns, about 3 microns to about 5 microns, about 3 microns to about 5.25 microns, about 3 microns to about 5.5 microns, about 3 microns to about 5.75 microns, about 4 microns to about 4.25 microns, about 4 microns to about 4.5 microns, about 4 microns to about 4.75 microns, about 4 microns to about 5 microns, about 4 microns to about 5.25 microns, about 4 microns to about 5.5 microns, about 4 microns to about 5.75 microns, about 4.5 microns to about 4.75 microns, about 4.5 microns to about 5 microns, about 4.5 microns to about 5.25 microns, about 4.5 microns to about 5.5 microns, about 4.5 microns to about 5.75 microns, about 4.5 microns to about 6 microns, about 4.75 microns to about 5 microns, about 4.75 microns to about 5.25 microns, about 4.75 microns to about 5.5 microns, about 4.75 microns to about 5.75 microns, about 4.It may have a particle size of 75 microns to about 6 microns, about 5 microns to about 5.25 microns, about 5.25 microns to about 5.5 microns, about 5 microns to about 5.5 microns, or about 5 microns to about 5.75 microns.

[0055] WC particles in the mild debris may typically have a particle size in the range of about 0.1 micron to about 1 micron. In certain embodiments, the WC particles are about 0.1 micron to about 0.2 micron, about 0.2 micron to about 0.3 micron, about 0.3 micron to about 0.4 micron, about 0.1 micron to about 0.4 micron, 0.1 micron to about 0.5 micron, 0.2 micron to about 0.5 micron, 0.3 micron to about 0.5 micron, about 0.4 micron to about 0.5 micron, about 0.5 micron to about 0.6 micron, about 0.5 micron to about 0.7 micron, about 0.5 micron to about 0.8 micron, about 0.5 micron to about 0.9 micron, about 0.5 micron to about 1.0 micron, about 0.6 micron to about 0.7 micron, about 0.4 micron to about 0.7 micron, about 0.4 micron to about 0.8 micron, about 0.4 micron to about 0.9, about 0.4 micron to about 1.0 micron, about 0.7 micron to about 0.8 micron, about 0.8 micron to about 0.9 micron, about 0.1 micron to about 1.0 micron, about 0.2 micron to about 1.0 micron, about 0.3 micron to about 1.0 micron, about 0.4 micron to about 1.0 micron, about 0.6 micron to about 1.0 micron, about 0.7 micron to about 1.0 micron, about 0.8 micron to about 1.0 micron, or about 0.9 micron to about 1.0 micron.

[0056] Co particles can typically have a particle size in the range of about 0.1 micron to about 1 micron. In certain embodiments, the Co particles have a particle size of about 0.1 micron to about 0.2 micron, about 0.2 micron to about 0.3 micron, about 0.3 micron to about 0.4 micron, about 0.1 micron to about 0.4 micron, about 0.1 micron to about 0.5 micron, about 0.2 micron to about 0.5 micron, about 0.3 micron to about 0.5 micron, about 0.4 micron to about 0.5 micron, about 0.5 micron to about 0.6 micron, about 0.5 micron to about 0.7 micron, about 0.5 micron to about 0.8 micron, about 0.5 micron to about 0.9 micron, about 0.5 micron to about 1.0 micron, about 0.6 micron to about 0.7 micron, about 0.4 micron to about 0.7 micron, about 0.4 micron to about 0.8 micron, about 0.4 micron to about 0.9 micron, about 0.4 micron to about 1.0 micron, about 0.7 micron to about 0.8 micron, about 0.8 micron to about 0.9 micron, about 0.1 micron to about 1.0 micron, about 0.2 micron to about 1.0 micron, about 0.3 micron to about 1.0 micron, about 0.4 micron to about 1.0 micron, about 0.6 micron to about 1.0 micron, about 0.7 micron to about 1.0 micron, about 0.8 micron to about 1.0 micron, or about 0.9 micron to about 1.0 micron.

[0057] To determine a specific cBN particle size or a specific Co particle size, one of ordinary skill in the art can typically employ either dynamic digital image analysis (DIA), static laser light scattering (SLS) also known as laser diffraction, or visual measurement by an electron microscope, a technique known as image analysis and light obscuration. Each method covers a characteristic size range that can be measured. These ranges overlap partially. However, the results of measuring the same sample also depend on the specific method used and can all be different. It would be easy for one of ordinary skill in the art who wants to determine the particle size or particle size distribution to know whether each of the methods mentioned is generally carried out and practiced. Accordingly, the reader is referred to, for example, (i) "Dynamic Digital Image Analysis, Laser Diffraction, Sieve Analysis", Retch Technology, and (ii) the scientific publication "Graphical Comparison of Image Analysis Data and Laser Diffraction Particle Size Distribution Measurement Data Obtained from the Measurement of Nonspherical Particle Systems" by Kelly et al., AAPS PharmSciTech. August 18, 2006, Volume 7(3), Article Number 69, in order to obtain further insights into, for example, each procedure and methodology. Note that all of these documents are hereby incorporated by reference in their entirety into this specification.

[0058] A shaped body ideally containing a cemented WC substrate with a support is known in the metallurgy art as a shaped body with a support. Alternatively, the manufacturing process can be carried out without the presence of a cemented WC substrate with a support, in which case the recovered shaped body is known in the metallurgy art as a supportless shaped body. FIGS. 1A and 1B respectively show exemplary shapes of a supportless shaped body 10 and a shaped body 20 with a support. The shaped body 20 with a support shown in FIG. 1B typically includes a body 30 made of sintered cBN particles, which body 30 is supported on a cemented WC substrate 35 and further fixed within a matrix of a ceramic binder material bonded via a transition interface. Optionally, these can be manufactured as a self - supporting / supportless PCBN material. Co in the ceramic binder reacts with WC present at least in the added mill debris having WC therein and boron in body 30, and thus forms at least one distinct tough Co(x)W(y)B(z) phase during the HPHT sintering and densification operation further described in paragraphs ¶

[0079] -

[0080] . In one example, (x) is 1, (y) is 2, (z) is 2, and at least one Co(x)W(y)B(z) tough phase includes CoW2B2. In another example, (x) is 1, (y) is 1, (z) is 1, and at least one Co(x)W(y)B(z) tough phase includes CoWB. The individual phases further formed in the ceramic binder are at least an AlN phase and an Al2O3 phase. Based on the total weight of the PcBN shaped body, the amount of aluminum may range from about 3 wt% to about 6 wt%, the amount of cobalt may range from about 0.9 wt% to about 2.5 wt%, and the amount of tungsten may range from about 5 wt% to about 8 wt%. The supportless shaped body 10 shown in FIG. 1A similarly includes a body 15 containing sintered cBN particles. In both the supportless shaped body 10 shown in FIG. 1A and the shaped body 20 with a support shown in FIG. 1B, the sintered bodies 15, 30 are composed of a plurality of wear - resistant cBN particles that are compressed and bonded. Each of the plurality of cBN particles includes a plurality of sub - particles.Each sub-particle may typically exhibit a size in the range of less than about 1 micron to about 2 microns, alternatively about 0.1 micron to about 1.5 microns, when typically measured with a particle property evaluation system manufactured by Microtrac. A typical exemplary discrete cBN particle having a particle size of about 1 micron to about 2 microns may contain, for example, about 10 to about 5000 sub-particles.

[0059] Method for manufacturing a sintered polycrystalline cubic boron nitride (PcBN) compact Referring now to FIG. 2, this figure shows a flow diagram 200 illustrating each process step for manufacturing a PcBN compact for use in a tool, in accordance with an exemplary embodiment of the present subject matter.

[0060] In step 202, the exemplary process 200 includes mixing powders to form a hard component of (i) a cBN hard phase of about 60 vol% to about 80 vol% based on the total volume of the powder mixture and (ii) a ceramic binder phase of about 20 vol% to about 40 vol% based on the total volume of the formed powder mixture, the pulverized body containing at least tungsten carbide (WC) therein.

[0061] In step 204, the desired particle size of the cBN powder and the ceramic binder powder can be produced by subjecting the powder mixture, together with a metal binder in the ceramic binder, generally for several hours (e.g., 8, 16, 32, 64 hours) to a grinding process at ambient conditions (i.e., for example, at 25 °C, 298.15 K and a pressure of 101.325 kPa) in a ball mill, an attritor mill, or a planetary mill to form a powder blend and generate mill debris having at least WC therein. The general purpose of mixing by the grinding operation is to promote a good ceramic binder distribution and good wettability between the cBN component and the ceramic binder powder mixture, thereby forming a powder blend. Optionally, the cBN powder and the ceramic binder powder can be crushed or otherwise finely comminuted before being ground together with the metal binder.

[0062] As will be apparent to those skilled in the art, the grinding in step 204 is carried out by first adding a grinding liquid to the cBN and ceramic binder powder to form a grinding slurry. The grinding liquid may be water, ethanol, methanol, isopropanol, butanol, an alcohol such as cyclohexanol, an organic solvent such as hexane, heptane, acetone, toluene, or a water, alcohol mixture, an alcohol and solvent mixture, or any combination thereof.

[0063] Process 200 can include a drying operation in step 206. The ground powder blend can be dried using any conventional technique such as vacuum drying, air drying, freeze drying, or spray drying to substantially remove, for example, the solvent in the ground slurry by evaporation.

[0064] Process 200 may also optionally include, in step 208, charging the dried powder blend into a heat-resistant metal cup.

[0065] Next, step 200 may include an HPHT sintering and solidification operation in step 210. A heat-resistant metal cup containing the dried powder blend can be placed within the HPHT cell, and HPHT sintering conditions can be applied to form a sintered PcBN compact for use in the tools disclosed herein. Step 210 can include sintering at a pressure ranging from about 4 gigapascals (GPa) to about 8 GPa, about 5 GPa to about 8 GPa, about 6 GPa to about 8 GPa, about 7 GPa to about 8 GPa, about 5 GPa to about 6 GPa, about 5 GPa to about 7 GPa, or about 6 GPa to about 7 GPa, and at a temperature in the range of about 1100 °C to about 1500 °C, about 1100 °C to about 1600 °C, about 1100 °C to about 1700 °C, about 1100 °C to about 1800 °C, about 1200 °C to about 1500 °C, about 1200 °C to about 1600 °C, about 1200 °C to about 1700 °C, about 1200 °C to about 1800 °C, about 1300 °C to about 1400 °C, about 1300 °C to about 1500 °C, about 1300 °C to about 1600 °C, about 1300 °C to about 1700 °C, about 1300 °C to about 1800 °C, about 1400 °C to about 1500 °C, about 1400 °C to about 1600 °C, about 1500 °C to about 1600 °C, about 1500 °C to about 1700 °C, about 1500 °C to about 1800 °C, about 1600 °C to about 1800 °C, or about 1700 °C to about 1800 °C.

[0066] The specific sintering pressure and sintering temperature ranges are selected such that the ceramic binder phase is sufficiently melted. The sintered PcBN compact can include cBN particles uniformly or substantially uniformly dispersed within the ceramic binder phase. During the HPHT sintering and solidification process, Co in the ceramic binder reacts with WC particles obtained from the mill debris and boron in the body 30 as described above in paragraph ¶

[0046] , thereby forming at least one individual tough Co(x)W(y)B(z) phase. In one example, (x) is 1, (y) is 2, (z) is 2, and at least one Co(x)W(y)B(z) tough phase includes CoW2B2. In another example, (x) is 1, (y) is 1, (z) is 1, and at least one Co(x)W(y)B(z) tough phase includes CoWB. The individual phases further formed in the ceramic binder are at least an AlN phase and an Al2O3 phase.

[0067] Those skilled in the art will likely be familiar with how the HPHT sintering and densification process for forming cBN is generally carried out. Thus, for example, readers are referred to U.S. Patent No. 5,512,235, U.S. Patent No. 10,196,314, and U.S. Patent No. 10,252,947 in order to gain further insights into various HPHT sintering processes, techniques, and methodologies. These documents are hereby incorporated by reference in their entirety.

[0068] In step 210, after the HPHT sintering and densification operation is completed, the obtained PcBN compact can be machined to form a disk of the PcBN compact. Machining may be performed through processes generally known in the art to form suitable cutting tools. Here, machining may appropriately include electrical discharge machining (EDM), electrical discharge grinding (EDG), or other processes to form the PcBN compact into a desired shape. Suitable shapes can include, for example, triangles from 80° to 120°, thereby effectively forming tips for use in various cutting and machining applications after brazing the disk to a cemented carbide tool body.

[0069] The compacts formed using the PcBN compositions described herein can advantageously be used in the manufacture of cutting tools. In some embodiments, PcBN compacts manufactured using the PcBN compositions can be used to form cutting insert blanks for the general machining of metals and metal alloys. Thus, the PcBN compacts formed according to step 200 can be used, for example, in the machining of difficult-to-machine metals or metal alloys. For example, in such scenarios, the PcBN compacts formed according to step 200 can be formed into cutting tools for machining high-strength alloys. In other embodiments, PcBN compacts can be used to manufacture interrupted cutting tools such as, for example, face end mills and / or milling inserts.

[0070] In summary, the PcBN compact formed by adopting the PcBN composition of the present specification can provide improved wear resistance and excellent abrasion resistance, thereby greatly improving the cutting performance and machining performance. As a result, ultimately, it can bring about a valuable extension of the life of the cutting tool manufactured in this way.

Examples

[0071] The following examples are described to provide those skilled in the art with a complete disclosure and description of the manufacturing and use methods of the described subject matter, and are not intended to limit the scope that the inventors consider to be their disclosure, nor are they intended to represent that the following experiments are all or the only experiments conducted. Although efforts have been made to ensure accuracy with respect to the numerical values used, some experimental errors and deviations need to be taken into account.

[0072] Example 1 Phase identification by X-ray diffraction (XRD) spectrum and scanning electron microscope (SEM), and image analysis of a sintered polycrystalline cubic boron nitride (PcBN)-based compression material

[0073] X-ray diffraction (XRD) spectra were performed on the sintered PcBN-based compact materials disclosed herein to identify the different phases present in the PcBN-based compact body materials. Figures 3 and 4 show exemplary XRD spectra for the case of using either (i) a TiN ceramic binder (exemplary compact body material 1) or (ii) a stoichiometric (ss) TiCN ceramic binder (exemplary compact body material 2), respectively. These materials were produced by standard methodological procedures for manufacturing PcBN-based compacts. The TiN and ss TiCN ceramic binder materials and cBN were mixed in ethanol to first form a grinding slurry, and then to ensure a uniform distribution of cBN and to produce a desired level of cemented WC / Co debris, it was usually milled in an attritor mill for at least 8 hours. In the final PcBN-based compact body, an additional amount of cobalt was added sufficient to ensure the formation of the desired Co(x)W(y)B(z) phase. Thereafter, the resulting grinding slurry was dried by vacuum drying, air drying, freeze drying or spray drying. The dried PcBN material supported on the resulting carbide substrate was further processed by subjecting the PcBN material to an HPHT operation by applying the high pressure high temperature (HPHT) reaction parameters described in paragraph ¶

[0079] . The resulting sintered PcBN compact body was ground to size, cut into a suitable shape such as a triangle of 80° - 120°, brazed to a carbide tool body, and finally formed into a cutting tool.

[0074] From the XRD spectra of FIGS. 3 and 4, it was confirmed that the exemplary compacting material 1 and the exemplary compacting material 2 contain a cBN, TiN or ss TiCN ceramic bonding phase. The Co(x)W(y)B(z) phase is identified as existing as crystalline CoW2B2. As seen in FIGS. 3 and 4, the cBN phase is identified as a peak appearing at about 7000 intensity counts on the y-axis and about 43° on the x-axis (00-035-1365 in FIG. 3 and 00-025-1033 in FIG. 4). In FIG. 3, the TiN phase is represented by peaks appearing at about 1000, 2500, 4500 and 6000 intensity counts on the y-axis, and about 36°, 42°, 62°, 73° and 77° on the x-axis (00-038-1420 in FIG. 3). In FIG. 4, the ss TiC 0.7 N 0.3 phase is represented by peaks identified at about 1000, 2000, 3000, 6000 and 6800 intensity counts on the y-axis and about 36°, 42°, 62°, 73° and 77° on the x-axis (00-042-1489 in FIG. 4). The CoW2B2 phase is observed to have multiple peaks in FIGS. 3 and 4 (04-004-0327 in FIG. 3 and 00-025-1082 in FIG. 4). Finally, phases further identified in the analysis of the XRD spectra include at least titanium boride (TiB2, 00-008-0121 in FIG. 3 and 00-008-0121 in FIG. 4), aluminum nitride (AlN, 04-006-2061 in FIG. 3 and 00-025-1133 in FIG. 4), and aluminum oxide (Al2O3, 00-005-0712 in FIG. 3 and 00-010-0173 in FIG. 4).

[0075] Scanning electron microscope (SEM) images of the sintered PcBN-based compacts disclosed in this specification were also prepared to identify the constituent components of the compacts. FIGS. 5A and 5B are scanning electron microscope (SEM) images showing the microstructure of an exemplary PcBN-based sintered compact containing a titanium nitride (TiN) ceramic binder at magnifications of 2000 times and 10000 times, respectively. Similarly, FIGS. 6A and 6B are scanning electron microscope (SEM) images showing the microstructure of an exemplary PcBN-based sintered body equally containing an ss titanium carbonitride (TiCN) ceramic binder at magnifications of 2000 times and 10000 times, respectively. In the SEM images, the cBN particles are identified as dark regions reflected by the numbers 500 in FIGS. 5A and 5B and the numbers 600 in FIGS. 6A and 6B. Aluminum, which is a relatively bright metal, is identified as a relatively dark gray region reflected by the numbers 502 in FIGS. 5A and 5B and the numbers 602 in FIGS. 6A and 6B. The titanium-containing regions are identified as brighter gray regions reflected by the numbers 504 in FIGS. 5A and 5B and the numbers 604 in FIGS. 6A and 6B. Finally, both Co and W appear as bright white regions reflected by the numbers 506A and 506 in FIGS. 5A and 5B, and the numbers 606A and 606 in FIGS. 6A and 6B, respectively.

[0076] Example 2 Cutting of surface-treated 8620 steel (case-hardened 8620 steel) using a sintered polycrystalline cubic boron nitride (PCBN)-based compact material

[0077] The workpiece made of surface-treated 8620 steel was cut with a PcBN-based compact material manufactured as described above in paragraph ¶

[0087] . (i) A conventional grade containing at least about 65% by volume based on the total volume of the PcBN composition, about 22% to 23% by volume of TiN based on the total volume of the PcBN composition, 5% by weight of Al, 2.6% by weight of W, and 0.15% by weight of Co based on the total weight of the PcBN composition, which is the conventional grade shown by the asterisk (*) in Table 1 having the XRD spectrum shown in Fig. 7A (formulation A), and (ii) a grade of the present invention containing at least about 65% by volume based on the total volume of the PcBN composition, about 21% to 22% by volume of TiN based on the total volume of the PcBN composition, 5% by weight of Al, 6.4% by weight of W, and 1.4% by weight of Co based on the total weight of the PcBN composition, which is the grade of the present invention measured by EDS analysis (formulation B in Table 1 having the XRD spectrum shown in Fig. 7B), were compared.

[0078] In Table 1, for both (i) the conventional grade and (ii) the grade of the present invention indicated by the asterisk (*), the cBN particle size ranged from about 2 microns to about 4 microns. The feed rate of the surface-treated 8620 steel was 0.2 mm / revolution, the depth of cut of the surface-hardened 8620 steel was 0.15 mm, and the cutting speed of the surface-treated 8620 steel was 200 m / min. The results obtained were as follows. In the case of a light interruption, the conventional grade failed due to chipping after an average of 0.39 linear km of cutting. On the other hand, the grade of the present invention was excellent and failed due to chipping after an average of 0.44 linear km of cutting. In the case of a severe interruption, the conventional grade failed due to chipping at an average of 0.34 linear km. In contrast, the grade of the present invention also functioned better this time and failed due to chipping at an average of 0.41 linear km.

[0079] Additional formulations were tested, e.g., the conventional grade C (formulation C) indicated by an asterisk (*) having a TiN binder with the XRD spectrum shown in FIG. 7C and the conventional grade E (formulation E) similarly indicated by an asterisk (*) having a TiCN binder with the XRD spectrum shown in FIG. 7E were compared with the inventive grade D (formulation D) and the inventive grade F (formulation F) having the XRD spectra shown in FIGS. 7D and 7F, respectively, as shown in Table 1.

[0080] As shown in Table 1, the tendency obtained was that, generally, the materials of the present invention showed longer tool life in the severe interrupted cutting test compared to the respective conventional compositions.

[0081] In conclusion, the data obtained demonstrate that the inventive grades are clearly superior to the conventional grades. TIFF2025518744000002.tif55170

[0082] Although the present disclosure has been described in relation to its embodiments, it will be understood by those skilled in the art that additional, deletion, modification, and substitution not specifically described may be made without departing from the spirit and scope of the present disclosure as defined in the appended claims.

[0083] Regarding the use of substantially any plural and / or singular terms herein, those skilled in the art can convert from plural to singular and / or from singular to plural as appropriate for the context and / or application. Various singular / plural permutations are not explicitly described herein for clarity.

[0084] The subject matter described in this specification may also refer to different components that are included within or connected to other different components. It should be understood that the architectures shown in this way are merely illustrative, and in fact, many other architectures that achieve the same functionality can be implemented. In a conceptual sense, any arrangement of components to achieve the same function is effectively "associated" so that the desired functionality is achieved. Thus, in this specification, any two components combined to achieve a particular functionality can be considered to be "associated" with each other so that the desired functionality is achieved, regardless of the architecture or intermediate components. Similarly, any two components thus associated can also be considered to be "operably connected" or "operably coupled" to each other to achieve the desired functionality, and any two components that can be associated in this way can also be considered to be "operably couplable" to each other to achieve the desired functionality. Specific examples of operably couplable include, but are not limited to, components that can physically fit and / or physically interact, and / or components that can wirelessly interact and / or are wirelessly interacting, and / or components that logically interact and / or are logically interactable.

[0085] One or more components may be referred to in this specification as "configured to", "configured by", "configurable to", "operable / operates to", "adapted / adaptable", "capable", "adaptable / to adapt", etc. One skilled in the art will recognize that such terms (e.g., "configured to") generally can include, in the context where there is no other requirement, active components and / or inactive components and / or standby components.

[0086] While specific embodiments of the subject matter described herein have been shown and described, based on the teachings herein, changes and modifications can be made without departing from the subject matter described herein and its broader aspects, and thus it will be apparent to those skilled in the art that the appended claims are intended to cover all such changes and modifications that fall within the true spirit and scope of the subject matter described herein. In general, the terms used herein, and especially in the appended claims (e.g., the body of the appended claims), will be understood by those skilled in the art to generally be intended as "open" terms (e.g., the term "comprising" should be interpreted as "comprising but not limited to", the term "having" should be interpreted as "having at least", and the term "including" should be interpreted as "including but not limited to").

[0087] If a specific numerical recitation of an introduced claim is intended, such intent will be expressly recited in the claim, and it will be further understood by those skilled in the art that if no such recitation is present, no such intent exists. For example, by way of illustration, the following appended claims may include the use of introductory phrases such as "at least one" and "one or more" to introduce claim recitations. However, the use of such phrases should not be construed to limit any particular claim that includes such an introduced claim recitation to a claim that includes only such a single recitation, and the same holds true for the use of definite articles used to introduce claim recitations, even if the introduction of a claim recitation by an indefinite article such as "a" or "an" is such that the same claim includes an indefinite article such as "one or more" or "at least one" and "a" or "an" (e.g., "a" and / or "an" should generally be interpreted to mean "at least one" or "one or more").

[0088] Furthermore, even if the claim recitation of a particular numerical value introduced is explicitly recited, one of ordinary skill in the art will recognize that such a recitation should typically be construed to mean at least the recited numerical value (e.g., a bare recitation without other modifiers such as "two recitations" typically means at least two recitations, or two or more recitations).

[0089] Furthermore, when conventions similar to "at least one of A, B, and C, etc." are used, generally, such a configuration is intended in the sense that one of ordinary skill in the art will understand the convention (e.g., "a system having at least one of A, B, and C" includes, but is not limited to, a system having only A, only B, only C, both A and B, both A and C, both B and C, and / or both A, B, and C). When conventions similar to "at least one of A, B, or C, etc." are used, generally, such a configuration is intended in the sense that one of ordinary skill in the art will understand the convention (e.g., "a system having at least one of A, B, or C" includes, but is not limited to, a system having only A, only B, only C, both A and B, both A and C, both B and C, and / or both A, B, and C). One of ordinary skill in the art will further understand that disjunctive words and / or phrases presenting two or more alternative terms should generally be understood to contemplate the possibility of including one of the terms, any of the terms, or both terms, unless the context indicates otherwise in the specification, the claims, or the drawings. For example, the phrase "A or B" is typically understood to include the possibilities of "A" or "B" or "A and B".

[0090] Regarding the appended claims, those skilled in the art will understand that the operations described therein can generally be performed in any order. Also, although various operation flows are shown in sequence, it should be understood that the various operations may be performed in an order other than the illustrated order, or may be performed simultaneously. Examples of such alternative orderings can include, unless otherwise indicated by the context, orderings of repetition, interleaving, interruption, rearrangement, incrementation, preparation, supplementation, simultaneity, reversal, or other variations. Further, terms such as "in response to", "related to", or other past-tense adjectives generally do not intend to exclude such variations unless otherwise indicated by the context.

[0091] Those skilled in the art will understand that the specific exemplary processes and / or apparatuses and / or techniques described above represent more general processes and / or apparatuses and / or techniques taught elsewhere in this specification, such as in the claims submitted with this specification and / or elsewhere in this application.

[0092] Although various aspects and embodiments are disclosed herein, other aspects and embodiments will be apparent to those skilled in the art. The various aspects and embodiments disclosed herein are for illustrative purposes only and are not intended to be limiting, and the true scope and spirit are indicated by the following claims.

[0093] The exemplary embodiments described in the detailed description, drawings, and claims are not meant to be limiting. Other embodiments can be utilized and other changes can be made without departing from the spirit or scope of the subject matter presented herein.

[0094] When a range of values is provided, unless a different clear indication is given in the context, each intervening value between the upper and lower limits of that range, down to one tenth of the unit of the lower limit, and any other stated value or intervening value within the stated range is to be understood as being included in this disclosure. The upper and lower limits of these narrower ranges that may be independently included within a narrower range are also included within this disclosure, but may be subject to change to any specifically excluded limits within the stated range. When the stated range includes one or both of the limits, ranges excluding one or both of those included limits are also included in this disclosure.

[0095] One of ordinary skill in the art will recognize that the components (e.g., operations), devices, objects, and accompanying discussions described herein are used as examples for clarity of concepts, and that various configuration changes are contemplated. Accordingly, as used herein, the specific exemplifications described and the accompanying discussions are intended to be representative of their more general classes. In general, the use of any particular exemplary instance is intended to be representative of its class and should not be construed as limiting to exclude any particular components (e.g., operations), devices, and objects.

[0096] Furthermore, for example, any sequence and / or temporal order of the systems and methods described herein are illustrative and should not be construed as being inherently limiting. Thus, it should be understood that process steps may be shown and described in an order or temporal order, but they are not necessarily limited to being performed in a particular order or temporal order. For example, steps in such a process or method may generally still be within the scope of this disclosure while being performed in various different sequences and orders.

[0097] Finally, the application publications and / or patents discussed herein are provided only with respect to disclosures prior to the filing date of the disclosed disclosure. No part of this specification should be construed as an admission that the disclosed disclosure has no right to antedate such disclosure by virtue of prior disclosure.

Claims

1. A polycrystalline cubic boron nitride (PcBN) composition, comprising from about 60 vol% to about 80 vol% of a cBN hard phase based on the total volume of the PcBN composition, and from about 20 vol% to about 40 vol% of a ceramic binder phase based on the total volume of the PcBN composition and the ceramic binder phase comprises an AlN phase, Al ２ O ３ phase, and at least one ductile Co(x)W(y)B(z) phase A polycrystalline cubic boron nitride (PcBN) composition.

2. The PcBN composition according to claim 1, wherein the ceramic binder phase comprises stoichiometric (ss) titanium nitride (TiN), titanium carbonitride (TiCN), or a combination thereof.

3. The PcBN composition according to claim 1, wherein the ceramic binder phase comprises stoichiometric or near-stoichiometric TiNO, TiCNO, or a combination thereof.

4. The PcBN composition according to claim 1, wherein the cBN particles have a particle size in the range of about 3 microns to about 6 microns.

5. The PcBN composition according to claim 4, wherein the cBN particles have a particle size in the range of about 2 microns to about 4 microns.

6. The PcBN composition according to claim 1, wherein the Co particles have a particle size in the range of about 0.1 micron to about 1 micron.

7. The PcBN composition according to claim 1, wherein the tungsten carbide (WC) particles have a particle size in the range of about 0.1 micron to about 1 micron.

8. (x) is 1, (y) is 2 and (z) is 2, and at least one Co(x)W(y)B(z) ductile phase is CoW ２ B ２The PCBN composition according to claim 1, comprising

9. The PCBN composition according to claim 1, wherein (x) is 1, (y) is 1 and (z) is 1, and at least one Co(x)W(y)B(z) toughening phase contains CoWB.

10. The PCBN composition according to claim 1, wherein based on the total weight of the PCBN composition, the amount of aluminum is in the range of about 3 wt% to about 6 wt%, the amount of cobalt is in the range of about 0.9 wt% to about 2.5 wt%, and the amount of tungsten is in the range of about 5 wt% to about 8 wt%.

11. A method for manufacturing a sintered polycrystalline cubic boron nitride (PCBN) compact, comprising Crushing a powder mixture, wherein the powder mixture contains powders that form (i) a cBN hard phase of about 60 vol% to about 80 vol% based on the total volume of the powder mixture and (ii) a hard component of a ceramic bonding phase of about 20 vol% to about 40 vol% based on the total volume of the powder mixture, and crushing the powder mixture with a crusher containing at least tungsten carbide (WC) to form a powder blend and generate mill debris; Drying the powder blend; Reacting the components of the powder blend under high pressure and high temperature (HPHT) conditions to form an AlN phase, an Al ２ O ３ phase, and at least one tough Co(x)W(y)B(z) phase in the ceramic bonding phase; A method for manufacturing a sintered PCBN compact, comprising

12. The method for manufacturing a sintered PCBN compact according to claim 11, wherein the ceramic bonding phase contains stoichiometric (ss) titanium nitride (TiN), titanium carbonitride (TiCN), or a combination thereof.

13. The method for manufacturing a sintered PCBN compact according to claim 11, wherein the ceramic bonding phase contains stoichiometric or near-stoichiometric TiNO, TiCNO, or a combination thereof.

14. The method for manufacturing a sintered PcBN compact according to claim 11, wherein the cBN particles have a particle size in the range of about 3 microns to about 6 microns.

15. The method for manufacturing a sintered PcBN compact according to claim 14, wherein the cBN particles have a particle size in the range of about 2 microns to about 4 microns.

16. The method for manufacturing a sintered PcBN compact according to claim 11, wherein the Co particles have a particle size in the range of about 0.1 micron to about 1 micron.

17. The method for manufacturing a sintered PcBN compact according to claim 11, wherein the tungsten carbide (WC) particles in the mill debris have a particle size in the range of about 0.1 micron to about 1 micron.

18. The method for manufacturing a sintered PcBN compact according to claim 11, wherein drying the powder blend includes vacuum drying, air drying, freeze drying, or spray drying.

19. The method for manufacturing a sintered PcBN compact according to claim 11, wherein the grinding is performed using one or more solvents including ethanol, methanol, isopropanol, butanol, cyclohexanol, acetone, hexane, heptane, toluene, water, or any combination thereof as a grinding slurry for the powder blend.

20. The method for manufacturing a sintered PcBN compact according to claim 11, wherein the HPHT conditions include a pressure in the range of about 4 gigapascals (GPa) to about 8 GPa and a temperature in the range of about 1100 °C to about 1800 °C.

21. (x) is 1, (y) is 2, and (z) is 2, and at least one Co(x)W(y)B(z) toughening phase is CoW ２ B ２ The method for manufacturing a sintered PcBN compact according to claim 11, including.

22. The method for manufacturing a sintered PcBN compact according to claim 11, wherein (x) is 1, (y) is 1, (z) is 1, and at least one Co(x)W(y)B(z) toughening phase contains CoWB.

23. The method for manufacturing a sintered PcBN compact according to claim 11, wherein based on the total weight of the PcBN compact, the amount of aluminum is in the range of about 3 wt% to about 6 wt%, the amount of cobalt is in the range of about 0.9 wt% to about 2.5 wt%, and the amount of tungsten is in the range of about 5 wt% to about 8 wt%.

24. The method for manufacturing a sintered PcBN compact according to claim 11, further comprising charging the powder blend into a heat-resistant metal cup after drying the powder blend.

25. A cutting tool comprising the PcBN composition according to claim 1.

26. A compact comprising the PcBN composition according to claim 1.

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