Gas injection device, substrate processing device, and thin film deposition method

Abstract

The present invention relates to a gas injection device, a substrate processing device, and a thin film deposition method, and more particularly, to a gas injection device, a substrate processing device, and a thin film deposition method for injecting a gas onto a substrate to deposit a thin film. A gas injection device according to an embodiment of the present invention includes a first gas supply path and a second gas supply path provided separately, and a first plate having a first gas supply port and a second gas supply port respectively connected to the first gas supply path and the second gas supply path, and a second plate spaced apart from the first plate and having a plurality of openings arranged so as to be staggered from the first gas supply port and the second gas supply port.

Description

Technical Field

[0001] The present invention relates to a gas injection device, a substrate processing device, and a thin film deposition method, and more particularly, to a gas injection device, a substrate processing device, and a thin film deposition method for depositing a thin film by injecting a gas onto a substrate.

Background Art

[0002] Generally, a semiconductor element or a display device is manufactured by depositing various substances in a thin film form on a substrate and patterning the same. For this purpose, different processes in various stages such as a deposition process, an etching process, a cleaning process, and a drying process are performed.

[0003] Here, the deposition process is a process for forming a thin film having properties required for a semiconductor element or a display device on a substrate. Such a deposition process is generally performed by a substrate processing device that forms a thin film on a substrate by injecting a process gas using a gas injection device having a plurality of injection ports to cause a chemical reaction.

[0004] Thus, when forming a thin film on a substrate using a gas injection device having a plurality of injection ports, ensuring the uniformity of deposition is a very important problem. For this reason, while the need for a gas injection device having an improved aperture structure for depositing a uniform thin film is increasing.

Prior Art Documents

Patent Documents

[0005]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0006] The present invention provides a gas injection device, a substrate processing device, and a thin film deposition method capable of depositing a uniform thin film.

Means for Solving the Problem

[0007] The gas injection device according to an embodiment of the present invention includes a first gas supply path and a second gas supply path that are provided separately, and a first plate having a first gas supply port and a second gas supply port respectively connected to the first gas supply path and the second gas supply path, and a second plate that is spaced apart from the first plate and has a plurality of openings arranged so as to be staggered with the first gas supply port and the second gas supply port.

[0008] The second plate may be arranged at a distance of 1 to 3 mm from the first plate.

[0009] The opening may include a first opening formed on the first plate side and a second opening connected to the first opening and having a diameter larger than that of the first opening.

[0010] The diameter of the first opening may be 1 to 3 mm.

[0011] The diameter of the second opening may be 10 to 14 mm.

[0012] The opening may further include a third opening connecting the first opening and the second opening between the first opening and the second opening.

[0013] The third opening may have a shape in which the cross-section becomes larger as it proceeds toward the second opening.

[0014] The length of the second opening may be 25 to 75 mm.

[0015] The thickness of the second plate may be 35 to 100 mm.

[0016] The openings may be arranged at intervals of 12 to 20 mm.

[0017] The first opening and the second opening may have different lengths from each other.

[0018] The length of the first opening may be even longer than that of the second opening.

[0019] The length of the second opening may be even longer than that of the first opening.

[0020] Further, a substrate processing apparatus according to an embodiment of the present invention includes a chamber, a substrate support device disposed inside the chamber for supporting a substrate disposed in the chamber, a gas injection device according to any one of claims 1 to 13 disposed inside the chamber for injecting gas toward the substrate support device, and a power supply device connected to the gas injection device for supplying power to the gas injection device.

[0021] The first plate and the second plate are electrically insulated from each other, and the power supply device may be connected to the second plate to supply power to the second plate.

[0022] The power supply device may supply power to the first plate and the second plate.

[0023] Further, a thin film deposition method according to an embodiment of the present invention is a thin film deposition method for depositing a thin film using any one of the gas injection devices described above, in which a first gas is supplied through the first gas supply path and a second gas is supplied through the second gas supply path to deposit a thin film on a substrate.

[0024] The thin film deposition method may supply at least one of the first gas and the second gas to deposit a thin film on a substrate by a chemical vapor deposition (CVD) method or an atomic layer deposition (ALD) method.

[0025] The thin film may include at least one of an IZO thin film in which indium (In) is doped into zinc oxide (ZnO), a GZO thin film in which gallium (Ga) is doped into zinc oxide (ZnO), an IGZO thin film in which indium (In) and gallium (Ga) are doped into zinc oxide (ZnO), a High-K thin film, a silicon dioxide (SiO2) thin film, and a silicon nitride (SiN) thin film.

Advantages of the Invention

[0026] According to an embodiment of the present invention, the uniformity of deposition can be improved by minimizing the interval between the openings for injecting the process gas.

[0027] In addition, a high-density plasma can be formed by using the hollow cathode effect, and thereby, a high-quality thin film can be formed.

Brief Description of the Drawings

[0028]

Figure 1

Figure 2

Figure 3

Modes for Carrying Out the Invention

[0029] Hereinafter, embodiments of the present invention will be described in more detail with reference to the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below and can be embodied in various different forms. The following embodiments are provided only to make the disclosure of the present invention complete and to fully inform those with ordinary knowledge of the scope of the invention.

[0030] Throughout the specification, when referring to one component such as a film, region, or substrate being "on" another component, it is to be interpreted that the one component may be in direct contact "on" the other component or that there may be yet other components intervening between them.

[0031] Also, relative terms such as "upper" or "lower" can be used herein to describe the relative relationship of one element to other elements, as shown in the drawings. It is to be understood that relative terms are intended to include other directions of the element in addition to the directions depicted in the figures. For purposes of illustrating the invention in detail, the drawings may be shown exaggerated, and in the figures, the same reference numerals indicate the same components.

[0032] FIG. 1 is a diagram schematically showing a substrate processing apparatus according to an embodiment of the present invention. Further, FIG. 2 is a diagram showing the layout structure of an opening in a gas injection device according to an embodiment of the present invention, and FIG. 3 is a diagram showing a state in which a supply port and an opening are formed in the gas injection device according to an embodiment of the present invention.

[0033] Referring to FIGS. 1 to 3, a substrate processing apparatus according to an embodiment of the present invention includes a chamber 10, a substrate support device 20 provided in the chamber 10 and disposed inside the chamber 10 to support a substrate S disposed in the chamber 10, a gas injection device 300 disposed inside the chamber 10 to inject gas into the substrate support device 20, and a power supply device 400 connected to the gas injection device 300 to supply power for generating plasma in the chamber 10 to the gas injection device. Further, the substrate processing apparatus may further include a control device (not shown) for controlling the power supply device 400.

[0034] Chamber 10 provides a predetermined reaction space and maintains it airtight. Chamber 10 may include a body 14 having a generally circular or square planar portion and side wall portions extending upward from the planar portion to have a predetermined reaction space, and a lid 12 generally circular or square and located above the body 14 to maintain the reaction space airtight. However, Chamber 10 is not limited thereto and may be fabricated in a variety of shapes corresponding to the shape of substrate S.

[0035] An exhaust port (not shown) is formed in a predetermined region on the lower surface of Chamber 10, and an exhaust pipe (not shown) connected to the exhaust port may be provided outside Chamber 10. Further, the exhaust pipe may be connected to an exhaust device (not shown). As the exhaust device, a vacuum pump such as a turbo molecular pump can be used. Therefore, the inside of Chamber 10 can be evacuated to a predetermined reduced-pressure atmosphere, for example, a predetermined pressure of 0.1 mTorr or less by the exhaust device. The exhaust pipe may be disposed not only on the lower surface of Chamber 10 but also on the side surface of Chamber 10 below the substrate support device 20 described later. Needless to say, a large number of exhaust pipes and accompanying exhaust devices may be further provided to shorten the evacuation time.

[0036] On the other hand, a substrate S disposed in Chamber 10 for a substrate processing step, for example, a thin film deposition step, may be placed on the substrate support device 20. The substrate support device 20 may be provided with, for example, an electrostatic chuck so that such a substrate S can be placed and supported, and can adsorb and hold the substrate S by electrostatic force, or can support the substrate S by vacuum adsorption or mechanical force.

[0037] The substrate support device 20 may be provided in a shape corresponding to the shape of the substrate S, for example, a circular or rectangular shape. The substrate support device 20 may include a substrate support table 22 on which the substrate S is placed and a lifter 24 disposed below the substrate support table 22 for raising and lowering the substrate support table 22. Here, the substrate support table 22 may be made larger than the substrate S, and the lifter 24 may be provided to support at least one region of the substrate support table 22, for example, the central portion. When the substrate S is placed on the substrate support table 22, the substrate support table 22 can be moved so as to approach the gas injection device 300. Further, a heater (not shown) may be disposed inside the substrate support table 22. The heater generates heat at a predetermined temperature to heat the substrate support table 22 and the substrate S placed on the substrate support table 22, so that a thin film is uniformly deposited on the substrate S.

[0038] A gas supply device may be disposed on the lid 12 of the chamber 10. The gas supply device may be disposed so as to penetrate the lid 12 of the chamber 10, and may include a first gas supply unit 110 and a second gas supply unit 120 for supplying the first gas and the second gas to the gas injection device 300, respectively. Here, the first gas may contain a source gas, and the second gas may contain a reaction gas. However, the present invention is not limited thereto, and the first gas may contain a reaction gas, the second gas may contain a source gas, or at least one of the first gas and the second gas may contain a mixed gas in which a source gas and a reaction gas are mixed. Needless to say, at least one of the first gas and the second gas may be a purge gas. That is, the first gas supply unit 110 and the second gas supply unit 120 are not necessarily limited to supplying a single gas, and the first gas supply unit 110 and the second gas supply unit 120 may be configured to supply a plurality of gases simultaneously, or may be configured to supply a gas selected from among the plurality of gases.

[0039] The gas injection device 300 is disposed inside the chamber 10, for example, on the lower surface of the lid 12. Inside the gas injection device 300, a first gas supply path for injecting and supplying the first gas onto the substrate and a second gas supply path for injecting and supplying the second gas onto the substrate are formed. The first gas supply path and the second gas supply path are provided so as to be separated from each other independently, and the first gas and the second gas can be separated and supplied onto the substrate so as not to be mixed inside the gas injection device 300.

[0040] More specifically, the gas injection device 300 includes a first plate provided with a first gas supply path and a second gas supply path separated from each other, and a first gas supply port 312 and a second gas supply port 314 respectively connected to the first gas supply path and the second gas supply path, and a second plate 330 spaced apart from the first plate and having a plurality of openings 332 arranged so as to be staggered from the first gas supply port 312 and the second gas supply port 314.

[0041] The first plate may include an upper frame 310 and a lower frame 320. Here, the upper frame 310 is detachably coupled to the lower surface of the lid 12, and a part of the upper surface, for example, the central portion of the upper surface, is spaced apart from the lower surface of the lid 12 by a predetermined distance. Thereby, the first gas provided from the first gas supply unit 110 can diffuse in the space between the upper surface of the upper frame 310 and the lower surface of the lid 12. Also, the lower frame 320 is disposed at a certain interval from the lower surface of the upper frame 310. Thereby, the second gas provided from the second gas supply unit 120 can diffuse in the space between the upper surface of the lower frame 320 and the lower surface of the upper frame 310. The upper frame 310 and the lower frame 320 may be integrally formed so as to be connected along the outer peripheral surface and provided with a separation space inside, and it goes without saying that the outer peripheral surface may be sealed by the first sealing member 350. At this time, the first sealing member 350 may be formed of an insulating material for electrically insulating the upper frame 310 and the lower frame 320 from each other, or conversely, may be formed of a conductive material for electrically connecting the upper frame 310 and the lower frame 320 to each other.

[0042] The first gas supply path may be formed such that the first gas provided from the first gas supply unit 110 diffuses in the space between the lower surface of the lid 12 and the upper frame 310 and is supplied into the chamber 10 through the upper frame 310 and the lower frame 320. At this time, the first gas supply port 312 may be formed by being connected to the first gas supply path, or may be formed by penetrating the upper frame 310 and the lower frame 320 so as to be isolated from the space between the upper surface of the lower frame 320 and the lower surface of the upper frame 310 at the lower part of the space between the upper surface of the upper frame 310 and the lower surface of the lid 12.

[0043] Further, the second gas supply path may be formed such that the second gas provided from the second gas supply unit 120 diffuses in the space between the lower surface of the upper frame 310 and the upper surface of the lower frame 320 and then penetrates through the lower frame 320 and is supplied into the chamber 10. At this time, the second gas supply port 322 may be formed by being connected to the second gas supply path, or may be formed to penetrate through the lower frame 320 at the lower part of the space between the lower surfaces of the upper frame 310.

[0044] Thereby, the first gas supply path and the second gas supply path cannot communicate with each other, and the first gas and the second gas can be separated and supplied downward from the gas supply device through the first plate.

[0045] The second plate 330 may be disposed spaced apart below the lower frame 320. That is, the second plate 330 is disposed at a certain interval D1 from the lower surface of the lower frame 320. Thereby, the first gas and the second gas supplied downward through the first plate can diffuse in the space between the upper surface of the second plate 330 and the lower surface of the lower frame 320. The lower frame 320 and the second plate 330 may be integrally formed such that they are connected along the outer peripheral surface and a separation space is provided inside, or may have a structure in which the outer peripheral surface is sealed by the second sealing member 360. At this time, the second sealing member 360 may be formed of an insulating material for electrically insulating the lower frames 320 from each other, or conversely, may be formed of a conductive material for electrically connecting the lower frame 320 and the second plate 330 to each other.

[0046] Here, the second plate 330 may be disposed spaced below the first plate by a distance at which the plasma sheath region that can be formed on the surface of the first plate, i.e., the lower surface of the lower frame 320, overlaps with the plasma sheath region that can be formed on the surface of the second plate 330, i.e., the upper surface of the second plate 330. Here, the plasma sheath region means a dark field region where positive (+) ions are concentrated between the plasma and the surface of the structure and there is energy exchange, but almost no plasma is formed.

[0047] If the plasma sheath region that can be formed on the lower surface of the lower frame 320 and the plasma sheath region that can be formed on the upper surface of the second plate 330 do not overlap, plasma can be formed between the plasma sheath regions. However, in the embodiment of the present invention, by separating and arranging the lower frame 320 and the second plate 330 by a distance at which the plasma sheath region that can be formed on the lower surface of the lower frame 320 overlaps with the plasma sheath region that can be formed on the upper surface of the second plate 330, it is possible to prevent plasma from being generated between the lower surface of the lower frame 320 and the upper surface of the second plate 330.

[0048] On the one hand, as described above, since the first gas and the second gas supplied downward through the first plate need to diffuse in the space between the lower surface of the lower frame 320 and the upper surface of the second plate 330, the lower surface of the lower frame 320 and the upper surface of the second plate 330 must be separated by an interval that allows the gas to flow smoothly. For this reason, the second plate 330 may be arranged at an interval of 1 to 3 mm from the first plate. If the second plate 330 is arranged at an interval of within 1 mm from the first plate, the gas cannot flow smoothly in the space between the lower surface of the lower frame 320 and the upper surface of the second plate 330. If the interval is more than 3 mm, plasma will be generated in the space between the lower surface of the lower frame 320 and the upper surface of the second plate 330, resulting in particles, which will lead to process defects.

[0049] In addition, the second plate 330 has a plurality of openings 332 arranged so as to be staggered from the aforementioned first gas supply port 312 and second gas supply port 322. That is, as shown in FIG. 2, in the second plate 330, when the first plate and the second plate 330 are viewed from above or below, a plurality of openings 332 are formed so as not to overlap with either the first gas supply port 312 or the second gas supply port 322. Such a plurality of openings 332 may be formed so as to be respectively arranged between the first gas supply port 312 and the second gas supply port 322 along at least one direction when the first plate and the second plate 330 are viewed from above or below. Further, the plurality of openings 332 may be formed so as to be respectively arranged at the central positions between the first gas supply port 312 and the second gas supply port 322 along at least one direction.

[0050] If the opening 332 is arranged so as to overlap with the first gas supply port 312 and the second gas supply port 314, most of the gas supplied from the first gas supply port 312 and the second gas supply port 314 should pass through the opening 332 arranged to overlap with the first gas supply port 312 and the second gas supply port 314 and be ejected respectively. However, not all of the gas ejected downward through the opening 332, and some gas does not directly eject into the opening 332, but flows into the space between the lower surface of the lower frame 320 and the upper surface of the second plate 330, and there is a risk of stagnating in the space. Since such stagnated gas hinders the smooth flow of the gas and causes the formation of particles, in the present invention, a plurality of openings 332 may be formed in the second plate 330 so as to be arranged to be alternately displaced from the first gas supply port 312 and the second gas supply port 322 respectively.

[0051] Such an opening 332 may include a first opening 333 formed on the first plate side respectively and a second opening 335 connected to the first opening 333 and having a diameter larger than that of the first opening 333, as shown in FIG. 3. That is, each opening 332 may include a first opening 333 formed at a predetermined length H1 from the upper surface of the second plate 330 and a second opening 335 formed at a predetermined length H2 from the lower surface of the second plate 330. At this time, the first opening 333 is an inlet of gas, and the gas diffused in the space between the lower surface of the lower frame 320 and the upper surface of the second plate 330 flows into the opening 332 through the first opening 333. On the contrary, the second opening 335 is an outlet of gas, and the gas flowing into the opening 332 is jetted to the lower side of the second plate 330 through the second opening 335. The first opening 333 is arranged to be staggered from the first gas supply port 312 and the second gas supply port 322, and the second opening 335 may be formed to extend downward from the first opening 333 so as to have a diameter larger than that of the first opening 333. On the other hand, each opening 332 may further include a third opening 334 connecting the first opening 333 and the second opening 335 between the first opening 333 and the second opening 335.

[0052] The first opening 333 guides the gas diffused between the lower surface of the lower frame 320 and the upper surface of the second plate 330 to the lower second opening 335. Such a first opening 333 has a diameter D2 selected to uniformly guide the gas diffused between the lower surface of the lower frame 320 and the upper surface of the second plate 330 to each second opening 335. At this time, the first opening 333 may have a diameter D2 capable of forming a plasma sheath region inside. That is, the first opening 333 can form a plasma sheath region where all the plasma sheath regions that can be formed on the inner surface of the second plate 330 forming the first opening 333 overlap and almost no plasma is formed inside. For this purpose, the first opening 333 may have a diameter D2 of 1 to 3 mm. If the diameter D2 of the first opening 333 is formed to be less than 1 mm, the gas cannot flow smoothly through the first opening 333, and if it is formed such that the diameter D2 exceeds 3 mm, plasma will be generated in the first opening 333, resulting in a risk of blockage by particles. Such a first opening 333 may be formed to have a length H1 of 10 to 25 mm from the upper surface of the second plate 330.

[0053] The third opening 334 serves to smoothly reach the gas supplied through the first opening 333 from below the first opening 333 to the second opening 335. Such a third opening 334 may have a shape in which the cross-section increases from the lower end of the first opening 333 to the upper end of the second opening 335, whereby the gas supplied through the first opening 333 can be smoothly guided through the third opening 334 without stagnation and reach the second opening 335 smoothly. However, the third opening 334 is not an essential component, and when the third opening 334 is omitted, the second opening 335 may be directly connected to the lower side of the first opening 333.

[0054] The second opening 335 is formed by being connected to the lower side of the first opening 333 or the lower side of the third opening 334. The second opening 335 generates plasma using a hollow cathode effect that vibrates electrons within the cylindrical electrode. That is, the second opening 335 provides a large surface area to promote plasma ionization of the gas flowing into the second opening 335, generating a high-density plasma.

[0055] Such a second opening 335 may have a diameter D3 of 10 to 14 mm. If the diameter D3 of the second opening 335 is formed to be less than 10 mm, it is difficult to produce a hollow cathode effect, so a high-density plasma cannot be formed. Also, if the diameter D3 of the second opening 335 exceeds 14 mm, the spacing between the second openings 335 becomes wide and a uniform thin film cannot be deposited. When the spacing between the second openings 335 becomes wide, the gas ejected from each second opening 335 concentrates on a predetermined position on the substrate S, which causes deposition unevenness. However, if the spacing between the second openings 335 is narrowed, the gas ejected from each second opening 335 can overlap on the substrate S, and as a result, an even more uniform thin film can be deposited. In order to deposit a uniform thin film on the substrate S, the second openings 335 need to be arranged at intervals of 12 to 20 mm. When controlling the diameter D3 of the second opening 335 to be 14 mm or less, the second openings 335 can be arranged at intervals of 12 to 20 mm, improving the uniformity of deposition.

[0056] On the one hand, the second opening 335 may have a length H2 of 25 to 75 mm. That is, the second opening 335 may be formed with a length H2 of 25 to 75 mm upward from the lower surface of the second plate 330. If the length H2 of the second opening 335 is formed to be less than 25 mm, a sufficient hollow cathode effect cannot be produced. On the contrary, if the length H2 of the second opening 335 exceeds 75 mm, the ions generated in the second opening 335 may collide with the inner surface of the second plate 330 forming the second opening 335, and there is a risk of damage to the hole due to sputtering. Therefore, the second opening 335 can have a length H2 of 25 to 75 mm.

[0057] As described above, the first opening 333 may be formed with a length H1 of 10 to 25 mm. Also, the second opening 335 may have a length H2 of 25 to 75 mm. Therefore, the second plate 330 can be formed with a thickness of 35 to 100 mm. If the second plate 330 is formed with a thickness of less than 35 mm, the second plate 330 may sag due to its own weight. If it is formed with a thickness exceeding 100 mm, the weight increases and it occupies an excessively large space in the chamber 10, resulting in poor structural efficiency. Therefore, the second plate 330 may be formed with a thickness of 35 to 100 mm.

[0058] On the one hand, within the range where the second plate 330 has a set thickness, the length H1 of the first opening 333 and the length H2 of the second opening 335 may be adjusted respectively. That is, the length H1 of the opening 333 and the length H2 of the second opening 335 may be adjusted to be different from each other or the same as each other.

[0059] For example, within the range where the second plate 330 has a set thickness, in order to increase the plasma density, the length H1 of the first opening 333 may be formed to be even longer than the length H2 of the second opening 335. If the thickness of the second plate 330 is set to a thickness of 35 to 100 mm and the length H2 of the second opening 335 is set to 25 mm, in order to increase the plasma density, the first opening 333 may be set to be formed with a length H1 that is greater than 25 mm and less than or equal to 75 mm.

[0060] Also, within the range where the second plate 330 has a set thickness, in order to decrease the plasma density, the length H1 of the first opening 333 may be formed to be even shorter than the length H2 of the second opening 335, that is, the length H2 of the second opening 335 may be formed to be even longer than the length H1 of the first opening 333. If the thickness of the second plate 330 is set to a thickness of 35 to 100 mm and the length H2 of the second opening 335 is set to 25 mm, in order to decrease the plasma density, the first opening 333 may be set to be formed with a length H1 that is 10 mm or more and less than 25 mm.

[0061] On the other hand, it goes without saying that the length H1 of the first opening 333 and the length H2 of the second opening 335 may be formed to be the same as each other. In this way, by forming the length H1 of the first opening 333 and the length H2 of the second opening 335 to be different from each other or the same as each other, the plasma can be adjusted to a desired density.

[0062] The power supply device 400 may be connected to the gas injection device 300 in order to supply power for generating plasma in the chamber 10 to the gas injection device. That is, the power supply device 400 can supply RF power for generating plasma in the chamber 10.

[0063] Here, the power supply device 400 may be connected to the second plate 330 to supply RF power only to the second plate 330, and the first plate may be grounded. At this time, the first plate and the second plate 330 may be insulated by a second sealing member 360 formed of an insulating material. Thus, when the power supply device 400 supplies RF power to the second plate 330 and the first plate is grounded, the first plate and the second plate 330 form electrodes for generating capacitively coupled plasma (CCP), respectively. Also, the substrate support 22 may be grounded in the same way, and capacitively coupled plasma can be generated between the second plate 330 and the support 22.

[0064] In contrast, it goes without saying that the power supply device 400 can supply power to the first plate and the second plate 330. In this case, the second sealing member 360 may be formed of a conductive material so that the power supply device 400 supplies RF power to the first plate or the second plate 330, or the power supply device 400 supplies RF power to the first plate and the second plate 330, respectively. At this time, the same RF power may be supplied to the first plate and the second plate 330. Thus, if the power supply device 400 supplies the same RF power to the first plate and the second plate 330, the plasma sheath region formed between the first plate and the second plate 330 becomes narrower than when the first plate described above is grounded. Therefore, a relatively high-density capacitively coupled plasma can be generated between the grounded substrate support 22.

[0065] By using such a substrate processing apparatus of the present invention, a thin film can be deposited on the substrate S by a chemical vapor deposition (CVD) method or an atomic layer deposition (ALD) method. At this time, the thin film deposited by the chemical vapor deposition method or the atomic layer deposition method may include at least one of an indium (In)-doped indium zinc oxide (IZO) thin film, a gallium (Ga)-doped gallium zinc oxide (GZO) thin film, and an indium (In) and gallium (Ga)-doped indium gallium zinc oxide (IGZO) thin film, a thin film having a high dielectric constant (High-K), a silicon dioxide (SiO2) thin film, and a silicon nitride (SiN) thin film on zinc oxide (ZnO).

[0066] First, when depositing a thin film on the substrate S by the chemical vapor deposition method, the source gas and the reaction gas may be simultaneously supplied onto the substrate S. At this time, the first gas may contain the source gas, and the second gas may contain the reaction gas. However, the present invention is not limited thereto, and the first gas may contain the reaction gas and the second gas may contain the source gas, or at least one of the first gas and the second gas may contain a mixed gas in which the source gas and the reaction gas are mixed. Needless to say, at least one of the first gas and the second gas may be a purge gas. At this time, by supplying RF power to the gas injection device 300 via the power supply device 400, plasma can be formed in the chamber 10 to improve the deposition efficiency.

[0067] On the one hand, when depositing a thin film on the substrate S by atomic layer deposition, the source gas and the reaction gas may be alternately supplied onto the substrate S. At this time, the first gas may contain the source gas, and the second gas may contain the reaction gas, or the first gas may contain the reaction gas and the second gas may contain the source gas. Needless to say, at least one of the first gas and the second gas may be a purge gas. At this time, the step of supplying the source gas, the step of supplying the purge gas, the step of supplying the reaction gas, and the step of supplying the purge gas form one process cycle, and the process cycle can be repeated a plurality of times to deposit a thin film on the substrate S. At this time, by supplying RF power to the gas injection device 300 via the power supply device 400, plasma can be formed in the chamber 10, which is performed in the step of supplying the reaction gas and can improve the deposition efficiency.

[0068] As described above, according to the embodiment of the present invention, the interval between the openings for injecting the process gas can be minimized to improve the deposition uniformity. In addition, a high-density plasma can be formed by using the hollow cathode effect, and thus, a high-quality thin film can be formed.

[0069] As described above, the preferred embodiments of the present invention have been described and illustrated using specific terms. However, these terms are merely for clearly explaining the present invention, and it is obvious that various changes and modifications can be made to the embodiments of the present invention and the described terms without departing from the technical idea and scope of the claims. These modified embodiments should not be individually understood as departing from the idea and scope of the present invention, and should be said to belong within the scope of the claims of the present invention.

Claims

1. A first plate provided with a first gas supply path and a second gas supply path separated from each other, and having a first gas supply port and a second gas supply port respectively connected to the first gas supply path and the second gas supply path; A second plate spaced apart from the first plate and having a plurality of openings arranged so as to be staggered with the first gas supply port and the second gas supply port; A gas injection device comprising:

2. The gas injection device according to claim 1, wherein the second plate is arranged at a distance of 1 to 3 mm from the first plate.

3. The openings are: A first opening formed on the first plate side; A second opening connected to the first opening and having a diameter larger than that of the first opening; The gas injection device according to claim 1, comprising:

4. The gas injection device according to claim 3, wherein the diameter of the first opening is 1 to 3 mm.

5. The gas injection device according to claim 3, wherein the diameter of the second opening is 10 to 14 mm.

6. The openings further comprise: A third opening connecting the first opening and the second opening between the first opening and the second opening;

7. The gas injection device according to claim 6, wherein the third opening has a shape in which the cross section increases as it proceeds toward the second opening.

8. The gas injection device according to claim 3, wherein the length of the second opening is 25 to 75 mm.

9. The gas injection device according to claim 1, wherein the thickness of the second plate is 35 to 100 mm.

10. The gas injection device according to claim 1, wherein the openings are arranged at intervals of 12 to 20 mm.

11. The gas injection device according to claim 3, wherein the first opening and the second opening have different lengths.

12. The gas injection device according to claim 11, wherein the length of the first opening is longer than that of the second opening.

13. The gas injection device according to claim 11, wherein the length of the second opening is longer than that of the first opening.

14. A chamber; A substrate support device disposed inside the chamber for supporting a substrate disposed in the chamber; The gas injection device according to any one of claims 1 to 13, disposed inside the chamber for injecting gas toward the substrate support device; A power supply device connected to the gas injection device to supply power to the gas injection device, A substrate processing apparatus comprising:

15. The first plate and the second plate are electrically insulated from each other, The substrate processing apparatus according to claim 14, wherein the power supply device is connected to the second plate and supplies power to the second plate.

16. The substrate processing apparatus according to claim 14, wherein the power supply device supplies power to the first plate and the second plate.

17. A thin film deposition method of depositing a thin film using the gas injection device according to any one of claims 1 to 13, A thin film deposition method of supplying a first gas through the first gas supply path and supplying a second gas through the second gas supply path to deposit a thin film on a substrate.

18. The thin film deposition method according to claim 17, wherein at least one of the first gas and the second gas is supplied to deposit a thin film on a substrate by a chemical vapor deposition (CVD) method or an atomic layer deposition (ALD) method.

19. The thin film includes at least one of an IZO thin film in which indium (In) is doped into zinc oxide (ZnO), a GZO thin film in which gallium (Ga) is doped into zinc oxide (ZnO), an IGZO thin film in which indium (In) and gallium (Ga) are doped into zinc oxide (ZnO), a High-K thin film, a silicon dioxide (SiO ２ ) thin film, and a silicon nitride (SiN) thin film, and is the thin film deposition method according to claim 17.

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