Coating Method for Chamber Parts

Abstract

The embodiments disclosed herein include a component support for use in coating chamber components by chemical vapor deposition (CVD). The component support includes a contact rod configured to contact the chamber component at a fixed point located on the back side of the chamber component. The component support is configured to support the chamber component within the processing region while minimizing contact with the chamber component. The back-side fixed point reduces exposure of the fixed point to the reaction gas when the chamber component is installed.

Description

Technical Field

[0001]

[0001] Embodiments of the present disclosure generally relate to coating chamber components with a carbon-containing material within a chemical vapor deposition (CVD) chamber and a support for holding the chamber components therebetween.

Background Art

[0002]

[0002] Components that form a processing chamber used during the manufacture of semiconductor substrates may undergo various processing steps to make them usable. In some processes, chamber components such as susceptors and preheat rings undergo a CVD process to coat the components with a desired material. However, in the CVD process, it may be difficult to effectively coat each location of the component, which may affect the service life of the component and may also create additional weaknesses in the component body.

[0003]

[0003] Accordingly, there is a need for an improved method for coating chamber components using a CVD process.

Summary of the Invention

[0004]

[0004] In one embodiment, a method of coating a chamber component is provided. The method includes positioning a chamber component on a component support within a chamber body. One or more contact rods extending from the component support contact the back side of the chamber component only at one or more fixed points, the one or more fixed points being defined by one or more slots formed on the back side of the chamber component. The method further includes coating the chamber component with a carbon-containing material while the chamber component is supported on the component support. The back side of the chamber component faces the bottom surface of the chamber body.

[0005]

[0005] In another embodiment, a method of coating a chamber component is provided. The method includes positioning a chamber component on a component support within a chamber body. One or more contact rods extending from support rods of the component support contact the chamber component at one or more fixed points. The chamber component includes an inner portion forming a ring shape and an outer portion surrounding the inner portion. The inner portion extends away from the outer portion and forms a ledge such that one or more fixed points are located at corners formed in the chamber component, and the corners are defined as intersections of the ledge and the inner portion. The method further includes coating the chamber component with a carbon-containing material while the chamber component is supported on the component support. The chamber component faces the bottom surface of the chamber body.

[0006]

[0006] In yet another embodiment, a component support for a semiconductor processing chamber is provided. The component support for the semiconductor processing chamber includes a base and one or more legs coupled to the base, the legs extending away from an upper surface of the base. The component support for the semiconductor processing chamber further includes a support rod coupled to the base, the support rod extending away from the upper surface of the base. The component support for the semiconductor processing chamber further includes a support bar coupled to the legs and contact rods coupled to the support rod and to a side surface of the support rod. Each of the contact rods includes a contact point configured to contact a back side of the chamber component.

[0007]

[0007] To better understand the features of the present disclosure described above, the present disclosure summarized above will be described more specifically with reference to embodiments, some of which are illustrated in the accompanying drawings. However, it should be noted that the accompanying drawings illustrate only exemplary embodiments and should not be considered as limiting the scope, and other equally valid embodiments are also acceptable.

Brief Description of the Drawings

[0008]

Figure 1

Figure 2

Figure 3

Figure 4A

Figure 4B

Figure 5A

Figure 5B

Figure 6

Figure 7A

Figure 7B

Figure 8

DETAILED DESCRIPTION OF THE INVENTION

[0009]

[0019] For ease of understanding, wherever possible, the same reference numbers are used to denote the same elements common to the drawings. It is assumed that the elements and features of one embodiment can be beneficially incorporated into other embodiments without further elaboration.

[0010]

[0020] Embodiments of the present disclosure generally relate to a method for coating chamber components within chemical vapor deposition (CVD) and a component support suitable for supporting a chamber component while the chamber component is being coated. After undergoing a CVD coating process, chamber components (e.g., susceptors, preheat rings, among others within the chamber components) may have a thinner coating at the location where they contact a fixture (e.g., the component support). The location with the thinner coating is more susceptible to stress than other locations on the chamber component. When the chamber component is used in substrate manufacturing, such as within a CVD processing chamber, the reactive gas may interact with the region of the thinner coating, damaging the coating and adversely affecting the service life of the chamber component. The component support described herein is advantageously configured to contact the chamber component at a location on the chamber component selected to reduce the risk of component breakage at the location where it contacts the chamber component by having a fixed point for supporting the chamber component during coating.

[0011]

[0021] FIG. 1 is a schematic cross-sectional view of a chamber component coating (CCC) chamber with a first example of a component support according to an embodiment described herein. The CCC chamber 100 is configured to apply a coating of material onto chamber components, such as chamber components used within semiconductor processing chambers, particularly chemical vapor deposition (CVD) chambers, physical vapor deposition (PVD) chambers, plasma and vacuum processing chambers, ion implantation chambers, and the like. FIG. 2 is a schematic cross-sectional view of a chamber component coating (CCC) chamber with a second example of a component support according to an embodiment described herein. The CCC chamber 100 can be used with either of the component supports 105, 205. As shown, the CCC chamber 100 is configured to perform a CVD process, although in some embodiments, the CCC chamber 100 may be configured to perform another processing step, such as a processing step involving plasma or another deposition process. The CCC chamber 100 is configured to support one or more chamber components such that the components can be coated via a deposition process such as CVD.

[0012]

[0022] The CCC chamber 100 includes a chamber body 102 and a lid 106 coupled to the chamber body 102. The CCC chamber 100 includes one of the component supports 105, 205 disposed therein. The component supports 105, 205 are made of a graphite material or a silicon carbide material. In one embodiment, the component supports 105, 205 are coated with a carbon-containing material such as silicon carbide (SiC). The chamber body 102 and the chamber lid 106 surround the component support 105 within a processing region 120 defined within the chamber body 102. An exhaust port 156 is disposed through the chamber body 102. The exhaust port 156 is coupled to a vacuum pump 157. The vacuum pump 157 removes excess process gas or by-products from the processing region 120 through the exhaust port 156 during and / or after processing.

[0013]

[0023] A gas source 111 is connected to the CCC chamber 100 and includes one or more gas sources. The gas source 111 is configured to deliver one or more gases from the one or more gas sources to the processing region 120. Each of the one or more gas sources supplies a process gas (such as argon, hydrogen, or helium). In some embodiments, one or more of a carrier gas and an ionizable gas can be supplied into the processing region 120 together with one or more precursors. In some examples, a remote plasma source can be used to deliver plasma formed from the gas supplied from the gas source 111 to the CCC chamber 100 into the processing region 120 of the CCC chamber 100.

[0014]

[0024] The showerhead 112 can be disposed in the processing region 120 above the component supports 105, 205. The showerhead 112 includes an opening 118 for flowing a process gas or a gas into the processing region 120 from the gas supply source 111. The process gas is supplied to the CCC chamber 100 via the gas supply unit 114, and the process gas enters the plenum 116 defined above the showerhead 112 before flowing through the opening 118. In some embodiments, different process gases flowing simultaneously during the processing step enter the CCC chamber 100 via separate gas supply units and separate plenums before entering the processing region 120 through the showerhead 112.

[0015]

[0025] The CCC chamber 100 shown in FIG. 1 includes a component support 105. The CCC chamber 100 shown in FIG. 2 includes a component support 205. The component supports 105, 205 are configured to support one or more chamber components 107 during the CVD process executed in the CCC chamber 100. For example, the chamber component 107 can be any chamber component that requires a coating of a material that can be applied via a CVD or other process executed in the CCC chamber 100. In one example, the chamber component 107 is a susceptor. In another embodiment, the chamber component 107 is a ring such as a preheating ring, an edge ring, a shadow ring, a clamping ring, a cover ring, or other types of rings used in a semiconductor processing chamber. The chamber component 107 can also be a showerhead, a liner, a shield, a support shaft, etc.

[0016]

[0026] The component supports 105 and 205 are supported within the processing region 120 of the CCC chamber 100. In one embodiment, the component supports 105 and 205 are supported by a part of the chamber body 102. In another embodiment, the component supports 105 and 205 are coupled to the sidewall 104 of the chamber body 102 or otherwise supported by the sidewall 104 of the chamber body 102. As shown in FIG. 1, the component support 105 is removably coupled to the sidewall 104 via a sidewall fixture 110. As shown in FIG. 2, the component support 205 is directly coupled to the sidewall 104. In some embodiments, the component supports 105 and 205 are directly coupled to the sidewall 104. In other embodiments, the component supports 105 and 205 are coupled to the sidewall 104 via the sidewall fixture 110. The sidewall fixture 110 extends from the sidewall 104 to the component supports 105 and 205.

[0017]

[0027] As shown in FIGS. 1 and 2, the component supports 105 and 205 are suspended above the bottom surface 122 of the chamber body 102. The component supports 105 and 205 are suspended between the lid 106 and the bottom surface 122 within the processing region 120 by being coupled via the sidewall fixture 110 or directly to the sidewall 104. In other embodiments that can be combined with other embodiments described herein, the component supports 105 and 205 are disposed directly on the bottom surface 122 or on another support disposed on the bottom surface 122. In one example that can be combined with other embodiments described herein, the component supports 105 and 205 are permanently disposed within the processing region 120. In another example that can be combined with other embodiments described herein, the component supports 105 and 205 can be easily removed from the processing region 120.

[0018]

[0028] In FIG. 1, only one component support 105 within the CCC chamber 100 is illustrated, but one or more component supports 105 can be disposed within the CCC chamber 100. In FIG. 2, only one component support 205 within the CCC chamber 100 is illustrated, but one or more component supports 205 can be disposed within the CCC chamber 100.

[0019]

[0029] During the process, the component supports 105 and 205 hold one or more chamber components 107 during the CVD process. In one embodiment that can be combined with other embodiments described herein, the chamber component 107 is made of a graphite material. In another embodiment, the chamber component 107 is made of silicon carbide (SiC). Using the CVD process, the chamber component 107 is coated with a material. For example, the chamber component 107 is coated with a carbon-containing material. As an example, the carbon-containing material may be silicon carbide (SiC) or tantalum carbide (TaC). It is also envisioned that the carbon-containing material is laminated on the chamber component 107 from layers of the same or different carbon-containing materials.

[0020]

[0030] Coating the chamber component 107 with a material improves the durability of the chamber component 107 by increasing the strength and hardness of the chamber component and reducing wear. Furthermore, coating the chamber component 107 can improve the chemical resistance and high-temperature resistance of the chamber component 107. Also, the coating enables improvement of thermal shock resistance, reduction of the coefficient of thermal expansion, improvement of the thermal conductivity, and reduction of the density, thereby improving the service life of the chamber component 107.

[0021]

[0031] The component supports 105 and 205 contact the chamber component 107 at the fixed points 124. The contact area of each fixed point 124 with the chamber component 107 is about 0.2 mm 2 to about 100 mm 2 . Therefore, it is difficult to coat the material on the chamber component 107 at the fixed points 124. Thus, as detailed below, the component supports 105 and 205 contact the chamber component 107 at the fixed points 124 at locations where the stress applied to the fixed points 124 via the reaction gas and plasma during semiconductor processing is reduced.

[0022]

[0032] Figure 3 is a rear view of a susceptor according to an embodiment described in this specification. The component support 105 is configured to support a chamber component 107 (e.g., susceptor 302) within the CCC chamber 100. The back side 304 is opposite to the front side 305 of the susceptor 302. The front side 305 is configured to support a substrate during semiconductor processing. The back side 304 of the susceptor 302 includes one or more slots 306. The slots 306 are formed to partially penetrate the susceptor 302. The slots 306 are configured to define the fixed points 124 of the component support 105. The slots 306 are radially arranged around the center point 308 of the susceptor 302. Although three slots 306 are illustrated in FIG. 3, any number of slots 306 may be formed on the back side 304 of the susceptor 302. The shape of the slots 306 is not limited to the shape of the slots 306 shown in FIG. 3. For example, the slots 306 may have a circular, linear, triangular, square, rectangular, or other suitable shape. Each slot 306 may have a different shape and / or orientation. By disposing the slots 306 and the fixed points 124 on the back side 304 of the susceptor 302, the exposure of the fixed points 124 to the reaction gas is reduced. The contact of the reaction gas with the back side 304 of the susceptor 302 is limited. A support shaft region overlaps the back side 304 of the susceptor 302. The support shaft region is defined as the region where the support shaft in the semiconductor processing chamber contacts the susceptor 302. The support shaft region overlaps the slots 306. Therefore, due to the coverage by the support shaft region, the exposure of the fixed points 124 to the reaction gas is reduced. As a result, the service life of the susceptor 302 is extended.

[0023]

[0033] FIG. 4A is a rear view of the preheating ring 402 according to the embodiment described in this specification. The component support 105 is configured to support the chamber component 107 (for example, the preheating ring 402) within the CCC chamber 100. The back side 401 of the preheating ring 402 is opposite to the front side 403 of the preheating ring 402. When installed in a semiconductor processing chamber for substrate manufacturing, the back side 401 faces towards the bottom of the chamber and away from the processing region. In one embodiment, the preheating ring 402 is designed to be positioned around the substrate support. The preheating ring 402 facilitates the preheating of the process gas when the process gas enters the processing region 120 and flows over the preheating ring 402. The preheating ring 402 includes an annular region 404 that defines the inner circumference 406 of the preheating ring 402. The outer circumference 408 is radially outside of the inner circumference 406. The inner circumference 406 and the outer circumference 408 define the preheating ring 402. The back side 401 of the preheating ring 402 includes an inner portion 410 and an outer portion 412.

[0024]

[0034] FIG. 4B is an isometric view of a part of the preheating ring according to the embodiment described in this specification. The outer portion 412 extends away from the inner portion 410. The outer portion 412 forms a ledge 414 that extends away from the inner portion 410. The corner 418 is defined as the intersection of the ledge 414 and the inner portion 410. The corner 418 forms a complete circle around the preheating ring 402. The fixing points 124 are located at the corners 418 of the preheating ring 402. Although two fixing points 124 are illustrated in FIG. 4B, any number of fixing points 124 can be formed along the corners 418 of the preheating ring 402. The corner 418 contacts another surface of the semiconductor processing chamber during installation. In this way, the fixing points 124 on the corner 418 are covered. By covering the fixing points 124 and locating them on the back side 401 of the preheating ring 402, the exposure of the reaction gas at the fixing points 124 is reduced. The contact of the reaction gas on the back side 401 of the preheating ring 402 is limited. Therefore, the service life of the preheating ring 402 is extended.

[0025]

[0035] FIG. 5A is a schematic side view of an example of a component support that supports a susceptor according to an embodiment described in this specification. FIG. 5B is a schematic perspective view of an example of a component support according to an embodiment described in this specification. The component support 105 is configured to support a chamber component 107 such as the susceptor 302 shown in FIG. 3. The component support 105 includes a base 502, support rods 504, support bars 506, legs 508, and contact rods 510. The support rods 504 and the legs 508 are coupled to the base 502. The support rods 504 and the legs 508 extend away from the upper surface 503 of the base 502 in a vertical direction. The upper surface 503 is horizontal. As shown in FIG. 1, in one embodiment, the base 502 is coupled to the side wall 104 via a side wall fixture 110. In another embodiment, the base 502 is positioned on the bottom surface 122 of the chamber body 102.

[0026]

[0036] The support bar 506 is coupled to the legs 508. In one embodiment, the support bar 506 is curved. The support bar 506 may be curved toward the chamber component 107. In another embodiment, the support bar 506 is straight. The support bar 506 includes one or more contact rods 510 coupled thereto. For example, as shown in FIGS. 5A and 5B, two contact rods 510 are coupled to the support bar 506. The support rod 504 includes a contact rod 510 coupled to the side surface 507 of the support rod 504. The support rod 504 is arranged at a distance from the chamber component 107 greater than that of the support bar 506. In one embodiment, the support bar 506 includes two contact rods 510 and the support rod 504 includes one contact rod 510.

[0027]

[0037] Each of the contact rods 510 is configured to contact the back side 304 of the susceptor 302 at individual fixed points 124 to support the susceptor 302. The component support 105 is configured to support the susceptor 302 such that the back side 304 faces the upper surface 503 of the base 502. The back side 304 also faces the bottom surface 122 of the chamber body 102 (see FIG. 1). In other words, the component support 105 is configured to support the susceptor 302 such that the back side 304 is substantially perpendicular, for example within 10 degrees, to the upper surface 503 of the base 502 and the bottom surface 122 of the chamber body 102.

[0028]

[0038] The number of contact rods 510 corresponds to the number of slots 306 on the susceptor 302. The contact rods 510 are arranged at an angle with respect to the upper surface 503 of the base 502 (i.e., at an angle with respect to the horizontal plane). For example, the contact rods 510 can be arranged at an angle with respect to the upper surface 503 of the base 502 such that the contact rods 510 extend away from the upper surface 503. Due to the angle of the contact rods 510, the susceptor 302 can be more securely held with minimal contact on the susceptor 302. The angle of the contact rods 510 is from about 5° to about 95°. With the contact rods 510, the susceptor 302 can be kept in contact with the component support 105. The contact points 512 located at the ends of the contact rods 510 are shaped such that the susceptor 302 can be kept in contact with the contact rods 510. The contact points 512 are positioned to contact the slots 306. Due to the weight of the susceptor 302, the contact rods 510 can support the susceptor 302 disposed thereon. The contact points 512 can be any one of circular, rectangular, triangular, square, or other shapes suitable for contacting the slots 306 of the susceptor 302. In some embodiments that can be combined with other embodiments described herein, the bases 502 of two adjacent component supports 105 can be coupled to each other. In this way, a plurality of susceptors 302 can be held. Although three contact rods 510 are shown in FIGS. 5A and 5B, the number of contact rods 510 can be adjusted to correspond to the number of slots 306 on the susceptor 302.

[0029]

[0039] FIG. 6 is a flow diagram of a method of supporting chamber components within a chamber component coating (CCC) chamber during a coating process according to an embodiment described herein. For ease of explanation, method 600 will be described with reference to CCC chamber 100 shown in FIG. 1, although other chambers suitable for coating chamber components can be used with method 600. Method 600 will be described with reference to the coating of chamber component 107 while supported on component support 105. Chamber component 107 may be susceptor 302 as shown in FIG. 3. In one embodiment, component support 105 may be as shown in FIGS. 5A and 5B, or may have other suitable configurations.

[0030]

[0040] In step 601, susceptor 302 is positioned on component support 105. Component support 105 is disposed within processing region 120 of CCC chamber 100. Susceptor 302 includes one or more slots 306 (see FIG. 3) disposed on back side 304 of susceptor 302. Slots 306 are aligned with contact rods 510 of component support 105. Contact points 512 of contact rods 510 contact slots 306 to support susceptor 302 within processing region 120. Contact points 512 contact slots 306 at fixed points 124. Fixed point 124 is the only location on susceptor 302 where contact occurs. Component support 105 is configured such that fixed point 124 is on back side 304 of susceptor 302. It is envisioned that more than one susceptor 302 will be positioned on other component supports 105 disposed within processing region 120 for subsequent coating steps.

[0031]

[0041] In step 602, the susceptor 302 is coated with a material inside the processing region 120. The susceptor 302 is coated with a carbon-containing material such as silicon carbide or tantalum carbide. Coating the susceptor 302 with a carbon-containing material is to protect the susceptor 302 from the reaction gas in subsequent processing steps. For example, a carbon-containing gas source supplies a carbon-containing gas accompanied by a carrier gas. The carrier gas may be a single gas or a mixed gas. The carbon-containing gas is processed at a temperature higher than 1000°C to 1500°C under atmospheric pressure or reduced pressure.

[0032]

[0042] In some embodiments, after step 602, the susceptor 302 is installed in a semiconductor processing chamber. The semiconductor processing chamber may be a chamber used for manufacturing a semiconductor substrate. The susceptor 302 can be used to support a substrate in the semiconductor processing chamber. The susceptor 302 can be exposed to a reaction gas in the semiconductor processing chamber. The location of the fixed point 124 on the back side 304 of the susceptor 302 serves to reduce the exposure of the fixed point 124 to the reaction gas. For example, the support shaft region defines the location where the support shaft contacts the susceptor 302 and covers the fixed point 124. The support shaft region overlaps with the slot 306. The contact of the reaction gas on the back side 304 of the susceptor 302 is restricted. Therefore, if the carbon-containing material is not sufficiently coated at the fixed point 124, the reaction gas is less likely to damage the susceptor 302 at the fixed point 124. As a result, the service life of the susceptor 302 is extended.

[0033]

[0043] FIG. 7A is a schematic perspective view of another example of a component support for supporting a preheating ring according to an embodiment described herein. FIG. 7B is a schematic top view of another example of a component support according to an embodiment described herein. In one example, the component support is a component support 205 configured to support a chamber component 107 such as the preheating ring 402 shown in FIGS. 4A and 4B. The component support 205 includes a support rod 702 and one or more contact rods 704 extending from the support rod 702. The contact rod 704 is coupled to the support rod 702. For example, the contact rod 704 may be welded to the support rod 702 or screwed to the support rod 702. The support rod 702 may be directly coupled to the side wall 104. Alternatively, a support seated on the bottom surface 122 of the chamber body 102 is coupled to the support rod 702 to position the component support 205 within the processing region 120.

[0034]

[0044] The support rod 702 is disposed within the processing region 120 of the CCC chamber 100 (see FIG. 2). The support rod 702 includes a first portion 706 and a second portion 708. The first portion 706 and the second portion 708 are joined at a meeting point 710. The meeting point 710 is horizontal within the CCC chamber 100. The support rod 702 may be positioned on one or both of the first portion 706 and the second portion 708.

[0035]

[0045] In one embodiment that can be combined with other embodiments described herein, as shown in FIG. 7A, the first portion 706 and the second portion 708 are non-parallel to each other. In another embodiment that can be combined with other embodiments described herein, the first portion 706 and the second portion 708 are parallel and are connected at the meeting point 710 to form a flat plate. One or more contact rods 704 extend from the support rod 702. The one or more contact rods 704 are arranged at an angle with respect to the vertical axis 712. A pair of contact rods 704 is configured to support the preheating ring 402. However, it is assumed that a single contact rod 704 is suitable for supporting the preheating ring 402. The contact rod 704 contacts the corner 418 (see FIG. 4B) on the back side 401 of the preheating ring 402 at the fixed point 124. The number of contact rods 704 corresponds to the number of fixed points 124. The angle of the contact rod 704 enables the preheating ring 402 to be more securely held on the corner 418 while minimizing contact with the preheating ring 402. The angle of the contact rod 704 is from about 10° to about 90° with respect to the vertical axis 712. The contact rod 704 can keep the preheating ring 402 in contact with the component support 205.

[0036]

[0046] The component support 205 is configured to support the preheating ring 402 such that the back side 401 faces (or is substantially perpendicular to) the bottom surface 122 of the chamber body 102 (see FIG. 1). The contact point 714 located at the end of the contact rod 704 is shaped such that the preheating ring 402 remains in contact with the contact rod 704. The contact point 512 is positioned to contact the corner 418. Due to the weight of the preheating ring 402, the contact rod 704 can support the preheating ring 402 disposed thereon. The contact point 714 may be any one of circular, rectangular, triangular, square, or other shapes suitable for contacting the corner 418 of the preheating ring 402. In some embodiments that can be combined with other embodiments described herein, a plurality of support rods 702 may be disposed within the processing region 120. Thereby, a plurality of susceptors 302 can be held. In FIGS. 5A and 5B, four contact rods 704 are illustrated, but the number of contact rods 704 can be adjusted to correspond to the number of predetermined fixed points 124 on the preheating ring 402. In FIGS. 5A and 5B, two preheating rings 402 are illustrated, but the number of preheating rings 402 can be adjusted and is not limited by FIGS. 5A and 5B.

[0037]

[0047] FIG. 8 is a flow diagram of a method of supporting chamber components within a chamber component coating (CCC) chamber during a coating process according to an embodiment described herein. For ease of explanation, the method 800 will be described with reference to the CCC chamber 100 shown in FIG. 2, but other chambers suitable for coating chamber components can be used with the method 800. The method 800 will be described with reference to the coating of the chamber component 107 while being supported by the component support 205. The chamber component 107 may be the preheating ring 402 as shown in FIGS. 4A and 4B. The component support 205 may be as shown in FIGS. 7A and 7B, or may have other suitable configurations.

[0038]

[0048] In step 801, the preheating ring 402 is positioned on the component support 205. The component support 205 is disposed within the processing region 120 of the CCC chamber 100. The preheating ring 402 includes a corner 418 disposed on the back side 401 of the preheating ring 402. The contact rod 704 of the component support 205 contacts the corner 418 of the preheating ring 402. The contact point 714 of the contact rod 704 contacts the corner 418 to support the preheating ring 402 within the processing region 120. The contact point 714 contacts the corner 418 at the fixed point 124. The fixed point 124 is the only location where contact occurs on the preheating ring 402. The component support 205 is configured such that the fixed point 124 is on the back side 401 of the preheating ring 402. It is envisioned that more than one preheating ring 402 is positioned on other contact rods 704 arranged along the support rod 702 within the processing region 120.

[0039]

[0049] In step 802, the preheating ring 402 is coated with a material inside the processing region 120. The preheating ring 402 is coated with a carbon-containing material such as silicon carbide or tantalum carbide. Coating the preheating ring 402 with a carbon-containing material is to protect the preheating ring 402 from the reaction gas in subsequent processing steps. For example, a carbon-containing gas source supplies a carbon-containing gas with a carrier gas. The carrier gas may be a single gas or a mixed gas. The carbon-containing gas is processed at a temperature higher than 1000°C to 1500°C under atmospheric pressure or reduced pressure.

[0040]

[0050] In some embodiments, after step 602, the preheat ring 402 is installed in the semiconductor processing chamber. The semiconductor processing chamber may be a chamber used for manufacturing a semiconductor substrate. The preheat ring 402 can be exposed to a reaction gas within the semiconductor processing chamber. By positioning the fixed point 124 on the back side 401 of the preheat ring 402, it serves the function of reducing the exposure of the fixed point 124 to the reaction gas. The contact of the reaction gas with the back side 401 of the preheat ring 402 is restricted. Therefore, if the carbon-containing material does not sufficiently coat the fixed point 124, the reaction gas is less likely to damage one or more preheat rings 402 at the fixed point 124. As a result, the service life of the preheat ring 402 is extended.

[0041]

[0051] In summary, embodiments of the present disclosure relate to a component support for use in coating chamber components by chemical vapor deposition (CVD). The component support includes a contact rod configured to contact the chamber component at a fixed point located on the back side of the chamber component. The component support is configured to support the chamber component within the processing region while minimizing contact with the chamber component. The back-side fixed point reduces the exposure of the fixed point to the reaction gas when the chamber component is installed. Therefore, if the carbon-containing material does not sufficiently coat the fixed point, the reaction gas is less likely to damage the component at the fixed point. As a result, the service life of the chamber component is extended.

[0042]

[0052] Although the foregoing content is directed to embodiments of the present invention, it is possible to devise other further embodiments of the present invention without departing from its basic scope as determined by the following claims.

Claims

1. A method for coating a chamber component, comprising: positioning a chamber component on a component support within a chamber body, wherein one or more contact rods extending from the component support contact the back side of the chamber component only at one or more fixed points, and the one or more fixed points are defined by one or more slots formed on the back side of the chamber component; coating the chamber component with a carbon-containing material while the chamber component is supported on the component support, wherein the back side of the chamber component faces the bottom surface of the chamber body; A method as described above.

2. The method according to claim 1, further comprising positioning a second chamber component on the component support and coating the second chamber component with a carbon-containing material.

3. The method according to claim 1, further comprising positioning a second chamber component on a second component support within the chamber body and coating the second chamber component with a carbon-containing material.

4. The method according to claim 1, wherein the chamber component is a susceptor.

5. The method according to claim 1, wherein the back side of the chamber component is opposite to the front side of the chamber component configured to support a substrate within a semiconductor processing chamber.

6. The method according to claim 1, wherein the carbon-containing material is silicon carbide (SiC) or tantalum carbide (TaC).

7. The method according to claim 1, wherein the one or more contact rods are arranged at an angle with respect to a horizontal plane, and the angle of the one or more contact rods is from about 5° to about 95°.

8. The method according to claim 1, wherein each of the one or more contact rods includes a contact point configured to contact a slot on the back side of the chamber component, and the contact point has a circular, rectangular, triangular, or square shape.

9. The method according to claim 1, wherein the slot is located within a support shaft region located on the back side of the chamber component, and the support shaft region defines a region of the chamber component operable to contact a support shaft.

10. A method for coating a chamber component, comprising: Positioning a chamber component on a component support within a chamber body, wherein one or more contact rods extending from a support rod of the component support contact the chamber component at one or more fixed points, and the chamber component has an inner portion forming a ring shape, and an outer portion surrounding the inner portion, the inner portion extending away from the outer portion, and the one or more fixed points form a ledge such that the one or more fixed points are located at corners formed in the chamber component, the corners being defined as intersections of the ledge and the inner portion, the outer portion including, positioning a chamber component on a component support within a chamber body; and coating the chamber component with a carbon-containing material while the chamber component is supported on the component support, the chamber component facing the bottom surface of the chamber body, coating the chamber component with a carbon-containing material while the chamber component is supported on the component support including a method.

11. The method according to claim 10, further comprising positioning a second chamber component on the component support and coating the second chamber component with a carbon-containing material.

12. The method according to claim 10, further comprising positioning a second chamber component on a second component support within the chamber body and coating the second chamber component with a carbon-containing material.

13. The method according to claim 10, wherein the chamber component is a preheating ring.

14. The method according to claim 10, wherein the carbon-containing material is silicon carbide (SiC) or tantalum carbide (TaC).

15. The method according to claim 10, wherein the one or more contact rods are arranged at an angle with respect to a vertical axis, and the angle of the one or more contact rods is from about 10° to about 90°.

16. A component support for a semiconductor processing chamber, comprising a base, one or more legs coupled to the base, the legs extending away from an upper surface of the base, a support rod coupled to the base, the support rod extending away from an upper surface of the base, a support bar coupled to the legs, A contact rod coupled to the support rod and the side surface of the support rod, each including a contact point configured to contact the back side of the chamber component, and the contact rod A component support of a semiconductor processing chamber including.

17. The component support of a semiconductor processing chamber according to claim 16, wherein the contact point is configured to contact one or more slots formed on the back side of the chamber component.

18. The component support of a semiconductor processing chamber according to claim 17, wherein the back side of the chamber component is opposite to the front side of the chamber component configured to support a substrate in the semiconductor processing chamber.

19. The component support of a semiconductor processing chamber according to claim 16, wherein the support rod extends in a direction perpendicular to the upper surface from the upper surface of the base.

20. The component support of a semiconductor processing chamber according to claim 16, wherein the component support is a graphite material coated with silicon carbide.

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