Architecture of a single process gas supply line

Abstract

An exemplary semiconductor processing system may include a lid plate. A gas splitter may be seated on the lid plate. The gas splitter can include a top surface and a plurality of side surfaces. The gas splitter can define a gas inlet, one or more gas outlets, and one or more gas lumens. The one or more gas lumens can extend between the gas inlet and each of the one or more gas outlets and fluidly couple the gas inlet to each of the one or more gas outlets. A first gas weld may extend to the gas inlet and may be fluidly coupled to the gas inlet. The gas panel can include a first fluid source and a second fluid source each fluidly coupled to the first gas weld. One or more second gas welds can extend between each of the one or more gas outlets and each one of a plurality of processing chambers and fluidly couple each of the one or more gas outlets to each one of the plurality of processing chambers.

Description

Technical Field

[0001] Cross - Reference to Related Applications

[0001] This application claims the benefit and priority of U.S. Patent Application No. 17 / 880,310, entitled "SINGLE PROCESS GAS FEED LINE ARCHITECTURE," filed on August 3, 2022, the entire content of which is incorporated herein by reference.

[0002]

[0002] This technology relates to semiconductor processes and equipment. More specifically, this technology relates to semiconductor processing systems and components.

Background Art

[0003]

[0003] In semiconductor processing systems, often a cluster tool is utilized to integrate multiple process chambers. With this configuration, multiple consecutive processing steps can be easily performed without removing the substrate from a controlled processing environment, or it may be possible to perform the same process on multiple substrates in a variable chamber at once. These chambers can include, for example, a venting chamber, a pre - treatment chamber, a transfer chamber, a chemical vapor deposition chamber, a physical vapor deposition chamber, an etching chamber, a measurement chamber, and other chambers. The combination of chambers within the cluster tool, and the operating conditions and parameters under which these chambers are operated, are selected to manufacture a particular structure using a specific process recipe and process flow.

[0004]

[0004] Often, the processing system includes a gas distribution system that can mix a number of process gases and / or deliver them to various chambers in other ways. The temperature and flow rate of these gases may need to be carefully controlled to achieve the desired deposition rate and to ensure a uniform flow of gas into each processing chamber.

[0005]

[0005] Accordingly, there is a need for an improved system and method that can be used to efficiently mix gases and / or deliver them to a processing chamber in other ways under desired conditions. These and other needs are addressed by the present technology.

Summary of the Invention

[0006]

[0006] An exemplary semiconductor processing system can include a plurality of processing chambers. Each processing chamber can define a processing region. The semiconductor processing system can include a lid plate positioned above the plurality of processing chambers. The semiconductor processing system can include a gas splitter seated on the lid plate. The gas splitter can include a top surface and a plurality of side surfaces. The gas splitter can define a single gas inlet, one or more gas outlets, and one or more gas lumens. One or more gas lumens can extend between the gas inlet and each of the one or more gas outlets and fluidly couple the gas inlet to each of the one or more gas outlets. A first gas weld can extend to the gas inlet and be fluidly coupled to the gas inlet. The first gas weld can deliver a mixed process gas to the plurality of processing chambers. At least one gas mixing valve can include a first valve inlet, a second valve inlet, and a valve outlet. The valve outlet can be coupled to an inlet end of the first gas weld. One or more second gas welds can extend between each of the one or more gas outlets and each one of the plurality of processing chambers and fluidly couple each of the one or more gas outlets to each one of the plurality of processing chambers.

[0007] In some embodiments, the system can include a gas panel that includes a first gas source fluidly coupled to a first valve inlet and a second gas source fluidly coupled to a second valve inlet. The system can include a gas heater disposed upstream of at least one mixing valve. The gas heater can be operable to preheat at least one of the mixed process gases. The system can include a bypass weld fluidly connected to a first gas weld proximate the gas panel. The system can include one or more orifices disposed between one or more gas outlets and a plurality of processing chambers. The one or more orifices can have an inner diameter smaller than the inner diameter of the fluid lines disposed upstream and downstream of each of the one or more orifices. The system can include from one to six heater jackets surrounding the first gas weld. The system can include a plurality of output manifolds seated on a lid plate. Each of the one or more second gas welds can be fluidly coupled to a respective one of the plurality of output manifolds.

[0008]

[0008] Some embodiments of the present technology may include a semiconductor processing system that can include a lid plate. The system can include a gas splitter seated on the lid plate. The gas splitter can include an upper surface and a plurality of side surfaces. The gas splitter can define a gas inlet. The gas splitter can define one or more gas outlets. The gas splitter can define one or more gas lumens that extend between the gas inlet and each of the one or more gas outlets and fluidly couple the gas inlet to each of the one or more gas outlets. The system can include a first gas weld that extends to the gas inlet and is fluidly coupled to the gas inlet. The first gas weld can deliver a mixed process gas to a plurality of processing chambers. The system can include a gas panel that includes a first fluid source and a second fluid source each fluidly coupled to the first gas weld. The system can include one or more second gas welds that extend between each of the one or more gas outlets and each one of a plurality of processing chambers and fluidly couple each of the one or more gas outlets to each one of the plurality of processing chambers.

[0009]

[0009] In some embodiments, the system can include a gas heater fluidly coupled to a first gas weld. The gas heater can be operable to preheat at least one of the mixed process gases. The system can include a bypass weld fluidly coupled to the first gas weld proximate to the gas panel. The system can include one or more orifices between the one or more gas outlets and the plurality of processing chambers. The one or more orifices can have an inner diameter smaller than the inner diameter of the fluid lines disposed upstream and downstream of each of the one or more orifices. The one or more orifices can be removable so as to be able to change the inner diameter of the one or more orifices. Each of the one or more orifices can have an inner diameter of from about 1.70 mm to about 2.40 mm. The system can include from one to six heater jackets surrounding the first gas weld. The system can include at least one gas mixing valve having a first valve inlet, a second valve inlet, and a valve outlet. The first valve inlet can be fluidly coupled to the gas heater, and the gas heater can be operable to heat the gas before being sent to the first valve inlet. The valve outlet can be coupled to the inlet end of the first gas weld.

[0010]

[0010] Some embodiments of the present invention can encompass a semiconductor processing method. The method can include introducing a mixed process gas into a first gas weld. The mixed process gas can include at least two process gases. The method can include flowing the mixed process gas into a gas splitter via a gas inlet. The method can include dividing the flow of the mixed process gas into a plurality of gas lumens defined by the gas splitter. The method can include flowing a portion of the mixed process gas into each of the processing chambers via a plurality of second gas welds coupled to the gas outlet ends of each of the plurality of gas lumens.

[0011]

[0011] In some embodiments, the method can include heating at least one of the mixed process gases before introducing the mixed process gas into the first gas weld. The method can include directing a bypass portion of the mixed process gas toward a bypass weld. The method can include flowing a bypass portion of the mixed process gas through a bypass foreline through the bypass weld. The method can include combining at least a first process gas and a second process gas to form the mixed process gas. The first process gas can include O2, and the second process gas can include TEOS. The method can include heating O2 before combining O2 and TEOS.

[0012]

[0012] The above techniques can provide many advantages over conventional systems and techniques. For example, the processing system can provide a multi-substrate processing capability that is far more scalable than conventional designs. Further, the processing system can provide an even flow rate split between multiple chambers while preventing cross-talk between the chambers. The processing system can use passive flow control devices to regulate the flow to the multiple chambers and can reduce power consumption. These and other embodiments will be described in more detail below in conjunction with their many advantages and features and the accompanying drawings.

[0013]

[0013] The nature and advantages of the disclosed technology can be further understood by reference to the remainder of the specification and the drawings.

Brief Description of the Drawings

[0014]

Figure 1

Figure 2

Figure 3

Figure 4

Figure 5

Figure 6

Figure 7

Figures 8A - 8B

Figure 9

Figure 10

[0015]

[0025] Some of the figures are included as schematic diagrams. It should be understood that the figures are for illustrative purposes only and should not be considered to be to scale unless a scale or ratio is specifically described. Further, as schematic diagrams, the figures are provided to aid understanding and may not include all aspects or information compared to a realistic representation and may include exaggerated material for illustrative purposes.

[0016]

[0026] In the accompanying drawings, similar components and / or features may be labeled with the same reference labels. Further, various components of the same type may be distinguished by attaching letters after the reference label to distinguish similar components. If only a first reference label is used in this specification, the description is applicable to any one of the similar components having the same first reference label, regardless of the letter.

[0017]

[0027] Substrate processing may include time-consuming processes for adding, removing, or otherwise modifying materials on a wafer or semiconductor substrate. By efficiently moving the substrate, waiting time can be reduced and the throughput of the substrate can be improved. To improve the number of substrates processed within a cluster tool, additional chambers can be incorporated within the mainframe. Transfer robots and processing chambers can be continuously added by lengthening the tool, but this may reduce space efficiency as the installation area of the cluster tool expands. Accordingly, the present technology can include a cluster tool with an increased number of processing chambers within a defined installation area. To accommodate the limited installation area around the transfer robot, the present technology can increase the number of processing chambers laterally outward from the robot. For example, some conventional cluster tools can include one or two processing chambers positioned around a section of a transfer robot located at the center to maximize the number of radial chambers around the robot. The present technology can expand this concept by incorporating additional chambers laterally outward as another row or group of chambers. For example, the present technology can be applied using a cluster tool that includes three, four, five, six, or more processing chambers accessible at each of one or more robot access positions.

[0018]

[0028] However, when additional process positions are added, the rate of reagents and / or precursors supplied to the processing system may be divided among the additional processing chambers, which may reduce the process rate, such as the deposition rate or etching rate. To ensure a uniform flow of gas to each chamber, conventional chambers can utilize a gas splitter that includes valves, mass flow controllers, and / or other active flow control devices to regulate the gas flow to each chamber. However, such active flow control devices can introduce additional complexity to the processing system. For example, timing differences between the operation of different active flow control devices can introduce non-uniformities among the various chambers. Additionally, active flow control devices may require a significant amount of power to operate the processing system, along with heating elements.

[0019]

[0029] The present technology can overcome these problems by providing a single process gas line to the gas splitter. For example, embodiments can include one or more valves that mix multiple process gases from a gas panel before reaching the gas splitter. Further, by delivering the process gas to the gas splitter via a single gas line, the processing system can utilize passive flow control devices to carefully regulate the gas flow to each processing chamber. Without using active flow control devices, passive flow control devices can reduce any discrepancies in flow / volume between processing chambers. By eliminating the need for valves and other active flow control devices, embodiments can reduce the power consumption of the processing system and eliminate problems associated with such devices, such as pressure spikes and timing discrepancies. The processing system can include a heater that actively heats one or more process gases not only to provide better temperature control but also to reduce the amount of heating elements within the system. The heater can be positioned adjacent to or near the outlet of the gas panel. This can reduce the power consumption of the processing system.

[0020]

[0030] In the remaining disclosure, while specific structures such as a four-position chamber system where the present structure and method may be employed are always identified, it will be readily understood that the present system and method are equally applicable to any number of structures and devices that can benefit from the described structural capabilities. Accordingly, the present technology should not be considered limited to use with only any specific structure. Further, while an exemplary tool system is described to provide a basis for the present technology, it should be understood that the present technology can be incorporated with any number of semiconductor processing chambers and tools that can benefit from some or all of the described processes and systems.

[0021]

[0031] FIG. 1 is a top view showing an embodiment of a substrate processing tool or processing system 100 for deposition, etching, baking, and curing chambers according to some embodiments of the present technology. In the figure, a set of front-opening unified pods 102 supply substrates of various sizes, which are received into the factory interface 103 by robot arms 104a and 104b, and are placed in a load lock or low-pressure holding region 106 before being delivered to one of the semiconductor processing regions 108 positioned in chamber systems or quad sections 109a-c, each having a transfer region fluidly coupled to a plurality of processing regions 108. Although a quad system is illustrated, it should be understood that stand-alone chambers, twin chambers, and other multi-chamber system incorporated platforms are equally encompassed by the present technology. A second robot arm 110 housed in the transfer chamber 112 can be used to reciprocally transport substrate wafers from the holding region 106 to the quad section 109, and the second robot arm 110 may be housed in a transfer chamber to which each of the quad section or the processing system can be connected. Each semiconductor processing region 108 may be equipped to perform a number of substrate processing steps including any number of deposition processes including cyclic layer deposition, atomic layer deposition, chemical vapor deposition, physical vapor deposition, as well as etching, pre-cleaning, annealing, plasma treatment, degassing, orientation, and other substrate processes.

[0022]

[0032] Each quad section 109 can include a transfer area that receives the substrate from the second robot arm 110 and delivers the substrate to the second robot arm 110. The transfer area of the chamber system may be aligned with a transfer chamber having the second robot arm 110. In some embodiments, the transfer area may be laterally accessible to the robot. In subsequent processes, the components of the transfer section can translate the substrate vertically in parallel to the processing area 108 thereabove. Similarly, the transfer area may also be operable to rotate the substrate between positions within each transfer area. The semiconductor processing area 108 can include any number of system components for depositing, annealing, curing, and / or etching a material film on a substrate or wafer. In one configuration, two sets of processing areas, such as the processing areas of quad sections 109a and 109b, can be used to deposit material on the substrate, and a third set of processing chambers, such as the processing chamber or area of quad section 109c, can be used to cure, anneal, or process the deposited film. In another configuration, all three sets of chambers, such as all of the illustrated twelve chambers, can be configured for both depositing and / or curing a film on the substrate.

[0023]

[0033] As illustrated in the figures, the second robotic arm 110 can include two arms for simultaneously delivering and / or retrieving a plurality of substrates. For example, each quad section 109 can include two accesses 107 along the surface of the housing of a transfer region that may be laterally aligned with the second robotic arm. The accesses can be defined along a surface adjacent to the transfer chamber 112. In some embodiments as illustrated, the first access may be aligned with a first substrate support of a plurality of substrate supports of the quad section. Further, the second access may be aligned with a second substrate support of a plurality of substrate supports of the quad section. The first substrate support may be adjacent to the second substrate support, and in some embodiments, the two substrate supports may define a first column of substrate supports. As illustrated in the exemplary configuration, a second column of substrate supports may be positioned laterally outward from the transfer chamber 112 behind the first column of substrate supports. The two arms of the second robotic arm 110 may be spaced apart such that the two arms can simultaneously enter the quad section or chamber system and transfer or retrieve one or two substrates to or from the substrate supports within the transfer region.

[0024]

[0034] Any one or more of the described transfer regions can be incorporated with additional chambers separated from the manufacturing systems shown in different embodiments. It will be understood that additional configurations of deposition, etching, annealing, and curing chambers for material films are envisioned by the processing system 100. Further, any number of other processing systems that can incorporate a transfer system for performing any of the specific steps such as movement of substrates, etc. can be utilized with this technology. In some embodiments, a processing system that can provide access to a plurality of processing chamber regions while maintaining a vacuum environment in various sections such as the holding and transfer regions described above can enable performing processes in a plurality of chambers while maintaining a specific vacuum environment between individual processes.

[0025]

[0035] As described above, the processing system 100, or more specifically the quad-section or chamber system incorporated into the processing system 100 or another processing system, can include a transfer section positioned below the illustrated processing chamber region. FIG. 2 is a schematic isometric view showing the transfer section of an exemplary chamber system 200 according to some embodiments of the present technology. FIG. 2 may illustrate additional aspects or variations of the aspects of the transfer region described above and can include any of the components or characteristics described. The illustrated system can include a transfer region housing 205 that defines a transfer region that can be a chamber body as further described below and in which a number of components can be included. The transfer region can be further defined, at least in part, from above by a processing chamber or processing region fluidly coupled to the transfer region, such as the processing chamber region 108 illustrated in the quad-section 109 of FIG. 1. The sidewalls of the transfer region housing can define one or more access positions 207 through which a substrate can be delivered and retrieved by a second robotic arm 110 or the like as described above. The access position 207 can be a slit valve or other sealable access position that includes a door or other sealing mechanism to provide an airtight environment within the transfer region housing 205 in some embodiments. Two such access positions 207 are illustrated, but it should be understood that in some embodiments only a single access position 207 can be included, as well as access positions on multiple sides of the transfer region housing. Also, it should be understood that the illustrated transfer section can be sized to accommodate substrates of any size, including substrates of 200 mm, 300 mm, 450 mm, or larger or smaller, including substrates characterized by any number of shape dimensions or shapes.

[0026]

[0036] Within the transfer area housing 205, there may be a plurality of substrate supports 210 positioned around the transfer area volume. Although four substrate supports are illustrated, it should be understood that any number of substrate supports are equally encompassed by embodiments of the present technology. For example, about three, four, five, six, eight, or more substrate supports 210 may be accommodated in the transfer area according to embodiments of the present technology. The second robot arm 110 can transfer substrates to either or both of the substrate supports 210a or 210b through the access position 207. Similarly, the second robot arm 110 can retrieve substrates from these locations. Lift pins 212 can be protruded from the substrate supports 210 to enable the robot to access below the substrates. The lift pins may, in some embodiments, be fixed on the substrate support or at a position where the substrate support is recessed downward, or the lift pins may further move up and down through the substrate support. The substrate supports 210 may be movable in a parallel direction vertically and, in some embodiments, may extend up to a processing chamber area of a semiconductor processing system, such as the processing chamber area 108 positioned above the transfer area housing 205.

[0027]

[0037] The transfer area housing 205 may extend through an aperture of the transfer area housing as illustrated and can operate in conjunction with a laser, camera, or other monitoring device that protrudes or transmits through adjacent apertures, and can provide an access 215 for an alignment system that can determine whether the substrates being translated are properly aligned. The transfer area housing 205 can also include a transfer device 220 that can operate in many ways to position substrates and move substrates between various substrate supports. In one example, the transfer device 220 can move substrates on the substrate supports 210a and 210b to the substrate supports 210c and 210d, thereby potentially enabling additional substrates to be delivered into the transfer chamber. Additional transfer steps may include rotating substrates between substrate supports for additional processing in the processing area thereon.

[0028]

[0038] The transfer device 220 can include a central hub 225 that can include one or more shafts extending into the transfer chamber. An end effector 235 may be coupled to the shaft. The end effector 235 can include a plurality of arms 237 that extend radially or laterally outward from the central hub. Although a central body from which the arms extend has been illustrated, the end effector can further include, in various embodiments, separate arms each coupled to a shaft or the central hub. In embodiments of the present technology, any number of arms can be included. In some embodiments, the number of arms 237 may be the same as or equal to the number of substrate supports 210 included in the chamber. Thus, as illustrated, for four substrate supports, the transfer device 220 may include four arms extending from the end effector. The arms can be characterized by any number of shapes and profiles, such as a linear profile or an arcuate profile, and can include any number of distal profiles including hooks, rings, forks, or other designs for supporting the substrate and / or providing access to the substrate for, e.g., alignment or engagement.

[0029]

[0039] The end effector 235, or a component or portion of the end effector, can be used to contact the substrate during transfer or movement. Similar to the end effector, these components can also be made of, or can include, a number of materials including conductive and / or insulating materials. In some embodiments, the materials may be coated or plated to withstand contact with precursors or other chemicals that may enter the transfer chamber from the processing chamber above it.

[0030]

[0040] Furthermore, the material can be provided or selected to withstand other environmental characteristics such as temperature. In some embodiments, the substrate support may be operable to heat the substrate disposed on the support. The substrate support may be configured to raise the temperature of the surface or the substrate to a temperature of about 100 °C or more, about 200 °C or more, about 300 °C or more, about 400 °C or more, about 500 °C or more, about 600 °C or more, about 700 °C or more, about 800 °C or more, or above. Any of these temperatures may be maintained during the process, and thus, the components of the transfer device 220 may be exposed to any of these described or encompassed temperatures. Accordingly, in some embodiments, any material corresponding to these temperature conditions can be selected, including materials such as ceramics and metals that may be characterized by a relatively low coefficient of thermal expansion or other beneficial properties.

[0031]

[0041] The coupling of components can also be adapted for processes in high temperature and / or corrosive environments. For example, if the end effector and the end are each ceramic, the coupling can include a press joint, a snap joint, or other joints that may not include additional materials such as bolts that expand and contract with temperature and may cause cracking in the ceramic. In some embodiments, the end may be continuous with the end effector and may be integrally formed with the end effector. Any number of other materials that may facilitate the process or resistance during the process can be utilized and are similarly encompassed by the present technology. The transfer device 220 can include a number of components and configurations that can facilitate multi-directional movement of the end effector, including rotational movement, as well as vertical or lateral movement, in one or more ways using drive system components to which the end effector can be coupled.

[0032]

[0042] FIG. 3 is a schematic isometric view showing a transfer area of a chamber system 300 of an exemplary chamber system according to some embodiments of the present technology. The chamber system 300 may be similar to the transfer area of the chamber system 200 described above and may include similar components including any of the components, features, or configurations described above. FIG. 3 may also, together with the following figures, illustrate the coupling of specific components encompassed by the present technology.

[0033]

[0043] The chamber system 300 can include a chamber body 305 or housing that defines a transfer area. Within the defined volume, as described above, there may be a plurality of substrate supports 310 disposed dispersedly around the chamber body. As will be further described below, each substrate support 310 may be movable vertically along the central axis of the substrate support between a first position illustrated in the figure and a second position where substrate processing can be performed. The chamber body 305 may define one or more accesses 307 that penetrate the chamber body. A transfer device 335 may be positioned within the transfer area and configured to engage and rotate a substrate between the substrate supports 310 within the transfer area as described above. For example, the transfer device 335 may be rotatable about the central axis of the transfer device to reposition the substrate. The transfer device 335 may also be laterally movable in some embodiments to further facilitate repositioning of the substrate at each substrate support.

[0034]

[0044] The chamber body 305 can include an upper surface 306 that can provide support for components above the system. The upper surface 306 can define a gasket groove 308 that can provide a location for installing a gasket that provides a hermetic seal for components thereon for vacuum processing. Unlike some conventional systems, the chamber system 300 and other chamber systems according to some embodiments of the present technology may include a transfer region opened within the processing chamber, and the processing region may be formed above the transfer region. Since the transfer device 335 forms a sweeping region, a support or structure for separating the processing region may not be available. As a result, the present technology can utilize an upper lid structure to form a separated processing region above the opened transfer region, as described below. Thus, in some embodiments, the sealing between the chamber body and components thereon may be performed only around the outer wall of the chamber body that defines the transfer region, and in some embodiments, internal coupling may not be necessary. The chamber body 305 can also define an aperture 315 that can facilitate the exhaust flow from the processing region of the upper structure. The upper surface 306 of the chamber body 305 can also define one or more gasket grooves around the aperture 315 for sealing with components above. Further, the aperture can provide a positioning feature that can facilitate the stacking of components in some embodiments.

[0035]

[0045] FIG. 4 is a schematic isometric view showing the structure above the chamber system 300 according to some embodiments of the present technology. For example, in some embodiments, a first lid plate 405 may be seated on the chamber body 305. The first lid plate 405 can be characterized by a first surface 407 and a second surface 409 opposite the first surface. The first surface 407 of the first lid plate 405 may be in contact with the chamber body 305 and can define a groove on one side that cooperates with the groove 308 described above to generate a gasket channel between components. The first lid plate 405 can also define an aperture 410 that can separate the region above the transfer chamber and form a processing region for substrate processing.

[0036]

[0046] The aperture 410 may be defined through the first lid plate 405 and may be at least partially aligned with the substrate support in the transfer region. In some embodiments, the number of apertures 410 may be equal to the number of substrate supports in the transfer region, and each aperture 410 may be axially aligned with the substrate support of a plurality of substrate supports. As will be further described below, the processing region may be at least partially defined by the substrate support when vertically raised to a second position within the chamber system. The substrate support may extend through the aperture 410 of the first lid plate 405. Thus, in some embodiments, the aperture 410 of the first lid plate 405 may be characterized by a diameter larger than the diameter of the associated substrate support. Depending on the amount of spatial clearance, the diameter may be larger by about 25% or less than the diameter of the substrate support, and in some embodiments, may be larger by about 20% or less, about 15% or less, about 10% or less, about 9% or less, about 8% or less, about 7% or less, about 6% or less, about 5% or less, about 4% or less, about 3% or less, about 2% or less, about 1% or less, or less than that of the substrate support, and a minimum gap distance may be provided between the substrate support and the aperture 410.

[0037]

[0047] The first lid plate 405 may also include a second surface 409 opposite the first surface 407. The second surface 409 may define a concave ledge 415 that may create an annular concave shelf penetrating the second surface 409 of the first lid plate 405. The concave ledge 415 may be defined around each aperture of the plurality of apertures 410 in some embodiments. The concave shelf can provide support for the lid stack components, as will be further described below. Further, the first lid plate 405 may define a second aperture 420 that may at least partially define a pumping channel from the components described above. The second aperture 420 may be axially aligned with the aperture 315 of the chamber body 305 described above.

[0038]

[0048] FIG. 5 is a schematic partial isometric view of a chamber system 300 according to some embodiments of the present technology. The figure may illustrate a partial cross-section through two processing regions and a transfer region of the chamber system. For example, the chamber system 300 may be a quad-section of the processing system 100 described above and may include any of the components described above or any component of any of the systems.

[0039]

[0049] The chamber system 300 can include a chamber body 305 that defines a transfer region 502 that extends within the chamber body 305 and includes a substrate support 310 that can be translated vertically as described above. A first lid plate 405 may seat on the chamber body 305 and may define an aperture 410 that provides access for a processing region 504 formed by additional chamber system components. A lid stack 505 may seat around each aperture or at least partially within each aperture, and the chamber system 300 can include a plurality of lid stacks 505 equal in number to the number of apertures 410 among the plurality of apertures. Each lid stack 505 may seat on the first lid plate 405 and may seat on a shelf created by a concave ledge that penetrates the second surface of the first lid plate. The lid stack 505 may at least partially define the processing region 504 of the chamber system 300.

[0040]

[0050] As shown, the processing region 504 may be vertically offset from the transfer region 502, but may be fluidly coupled to the transfer region. Further, the processing region may be separated from other processing regions. The processing region may be fluidly coupled to other processing regions through the transfer region from below, but the processing region may be fluidly separated from each other processing region from above. Each lid stack 505 may also be aligned with the substrate support in some embodiments. For example, as shown, the lid stack 505a may be aligned on the substrate support 310a, and the lid stack 505b may be aligned on the substrate support 310b. When raised to an operating position such as a second position, the substrate support can transfer the substrate to perform individual processing within an individual processing region. When in this position, as further described below, each processing region 504 may be at least partially defined from below by the associated substrate support in the second position.

[0041]

[0051] FIG. 5 is also a diagram showing an embodiment in which a second lid plate 510 may be included for the chamber system. The second lid plate 510 may be coupled to each lid stack that may be disposed between the first lid plate 405 and the second lid plate 510 in some embodiments. As will be described below, the second lid plate 510 may facilitate access to the components of the lid stack 505. The second lid plate 510 may define a plurality of apertures 512 that penetrate the second lid plate. Each aperture of the plurality of apertures may be defined to provide fluid access to a particular lid stack 505 or processing region 504. A remote plasma unit 515 may optionally be included in the chamber system 300 in some embodiments and may be supported on the second lid plate 510. In some embodiments, the remote plasma unit 515 may be fluidly coupled to each aperture 512 of the plurality of apertures through the second lid plate 510. A isolation valve 520 may be included along each fluid line to provide fluid control to each individual processing region 504. For example, as shown, aperture 512a can provide fluid access to lid stack 505a. Aperture 512a may also be axially aligned with any of the lid stack components and, in some embodiments, with the substrate support 310a, such that each component associated with an individual processing region may be axially aligned along a central axis passing through either the substrate support or a component associated with a particular processing region 504. Similarly, aperture 512b can provide fluid access to lid stack 505b and may be aligned, which includes an axial alignment with the lid stack components as well as the substrate support 310b in some embodiments.

[0042]

[0052] FIG. 6 is a schematic isometric plan view showing an embodiment of a semiconductor processing system 600 according to some embodiments of the present technology. This figure may include any of the components of the systems previously illustrated and described, and may show any further aspects of the systems described above. It should also be understood that the illustration may show exemplary components as seen in any of the quadrants 109 described above.

[0043]

[0053] The semiconductor processing system 600 can include a lid plate 605 similar to the second lid plate 510 described above. For example, the lid plate 605 may define a number of apertures similar to the apertures 512 that provide access to a number of processing chambers positioned below the lid plate 605. Each aperture of the plurality of apertures may be defined to provide fluid access to a particular lid stack, processing chamber, and / or processing area.

[0044]

[0054] The gas splitter 610 may be seated on the upper surface of the lid plate 605. For example, the gas splitter 610 may be disposed at the center between the apertures of the lid plate 605. In some embodiments, one or more polymers such as PEEK spacers and / or other insulating spacers may be provided between the bottom surface of the gas splitter 610 and the lid plate 605. The spacers may serve to reduce heat transfer between the gas splitter 610 and the lid plate 605, which may improve the process conditions (such as by reducing the amount of power required to heat the gas splitter 610) and / or may serve to reduce the power consumption of the system 600. The gas splitter 610 may be fluidly coupled to a first gas weld 615 that delivers one or more process gases such as precursors, plasma waste water, and / or purge gas from a number of gas sources to the gas splitter 610. For example, the first gas weld 615 may extend vertically from a gas source such as a gas panel positioned below the lid plate 605 and may pass through the feed-through plate 620. A portion of the first gas weld 615 above the feed-through plate 620 may be bent horizontally and can direct the gas towards the gas splitter 610. In some embodiments, the first gas weld 615 may be disposed within one or more heater jackets 661 that serve to prevent heat loss along the length of the first gas weld 615.

[0045]

[0055] As further described below, the gas splitter 610 can receive gas from the first gas weld 615 and can split the gas flow into a number of gas outputs, each of which joins with a respective one of a number of second welds 630. Each second weld 630 can deliver purge gas and / or process gas to an output manifold 635 associated with a particular processing chamber. For example, the output manifold 635 may be positioned over each aperture formed in the lid plate 605 and may be fluidly coupled to the lid stack components to deliver one or more gases to the processing regions of the respective processing chambers.

[0046]

[0056] The remote plasma unit 660 may be supported on the lid plate 605 and may be fluidly coupled to each output manifold 635. For example, each output manifold 635 may define a central aperture that may be fluidly coupled to the remote plasma unit 660 using a manifold assembly. The remote plasma unit 660 may be positioned above each output manifold 635. The remote plasma unit 660 can supply precursors, plasma wastewater, cleaning gas, and / or purge gas to the output manifold 635 for subsequent delivery to the processing chamber in film deposition, chamber cleaning, and / or other processing steps. The manifold assembly may include a central manifold that couples to the base of the remote plasma unit 660 and divides the flow from a single gas input of the remote plasma unit 660 into separate outlets to each output manifold 635. Each separate gas outlet of the central manifold may be coupled to a side manifold 675 that defines at least a portion of a dedicated flow path to one of the output manifolds 635. In some embodiments, a isolation valve 690 may be positioned between each of the side manifold 675 and the output manifold 635. The isolation valve 690 can provide fluid control to each processing chamber, prevent backflow of gas to the remote plasma unit 660, and prevent crosstalk between various processing chambers.

[0047]

[0057] FIG. 7 is a schematic cross-sectional top view showing the gas splitter 610. The gas splitter 610 can include a body having an upper surface 612 and a number of side surfaces 614. In some embodiments, the gas splitter 610 can be a monolithic structure in which any lumens and / or other apertures are machined into the structure. Such a design can eliminate the need for electron beam welding and / or other joining techniques that can present opportunities for gas leakage and / or uniformity issues. As shown, the gas splitter 610 is octagonal and has eight side surfaces 614, but in various embodiments other numbers of side surfaces 614 can be utilized to meet the requirements of a particular application. As just one example, the number of side surfaces can be reduced for systems having less than four processing chambers and increased for systems having more than four processing chambers. The gas splitter 610 can include a gas inlet 617 that can join with the outlet end of the first gas weld 615 (as best shown in FIG. 6), thereby enabling one or more mixed gases to flow from a gas source through the first gas weld 615 and into the gas splitter 610. In some embodiments, the gas inlet 617 can extend through the upper surface 612, but in other embodiments, the gas inlet 617 can extend through one of the side surfaces 614 of the gas splitter 610. By positioning the gas inlet 617 through the upper surface 612 of the gas splitter 610, a symmetric flow path can be provided to each of a number of gas lumens 606 defined within the gas splitter 610 from the gas inlet 617, which can help to evenly distribute the flow of the mixed gas to each processing chamber. In some embodiments, the first gas weld 615 can have a single outlet, whereby a single flow path can be more easily machined or otherwise formed to tight tolerances, thus further improving the uniformity of the flow through the first gas weld 615 (and thus the system 600). However, in some embodiments, a first gas weld that is split into a plurality of outlets can be utilized.

[0048]

[0058] As described above, the gas splitter 610 may define a number of gas lumens 606 that extend between the gas inlet 617 of the gas splitter 610 and the number of gas outlets 608 of the gas splitter 610, fluidly coupling the gas inlet 617 of the gas splitter 610 to the number of gas outlets 608 of the gas splitter 610. At least a portion of the gas lumens 606 can split a gas flow from a single gas inlet into a plurality of gas outlets 608, such that the gas splitter 610 includes more gas outlets 608 than gas inlets. As shown, four gas lumens 606 are fluidly coupled to the gas inlet 617, extend radially outward from the center of the gas splitter 610, and split the flow from the first gas weld 615 to deliver gas to four (or other number based on the number of processing chambers included in the system 600) different gas outlets 608. The gas lumens 606 may extend at regular and / or irregular angles from the gas inlet 617. For example, as shown, each gas lumen 606 is positioned at regular intervals such that the angle between each gas lumen 606 and the gas inlet 617 is equal, which may help maintain a substantially equal level of directed flow to each gas lumen 606 (and each subsequent processing chamber). The number of gas outlets 608 and / or gas lumens 606 may, in some embodiments, match the number of processing chambers of the processing system 600. In some embodiments, each gas outlet 608 may extend through a respective side surface 614 of the gas splitter 610. Each gas outlet 608 may be positioned in a different side surface / region of the gas splitter 610. The split configuration of the gas lumens 606 may enable a single gas source to provide an equal flow rate of gas through each of the four gas outlets 608 using a single first gas weld 615 (having a single outlet) and a single gas splitter 610.

[0049]

[0059] In some embodiments, the gas splitter 610 can include a heat source. For example, the heater cartridge 607 may be coupled to the body of the gas splitter 610 and / or may be embedded within the body of the gas splitter 610. In some embodiments, the heat cartridge 607 may be positioned at the center of the gas splitter 610, thereby providing a uniform temperature gradient across the gas splitter 610. By providing a heat source within the gas splitter 610, the system 600 can provide excellent temperature control and improve the quality and uniformity of the film deposition process. The heat source can heat the gas splitter 610 and / or maintain the heat of the process gas at a temperature of about 75 °C or higher, about 100 °C or higher, about 125 °C or higher, about 150 °C or higher, about 175 °C or higher, about 200 °C or higher, or above.

[0050]

[0060] The gas exiting the gas outlet 608 of the gas splitter 610 can pass through the inlet end of the second weld 630 in order to be delivered to the respective output manifolds 635. For example, the inlet end of each second weld 630 may be coupled to each side 614 of the gas splitter 610 to fluidly couple the second weld 630 to one of the gas outlets 608. The gas splitter 610 can also include one or more passive flow control devices that can be used to adjust the flow rate to each processing chamber. For example, the gas splitter 610 can include a number of choke plates 621. In addition to enabling adjustment of the flow rate for each chamber, the choke plates 621 can function as passive flow control devices that allow downstream components (including output welds, manifolds, lid stacks, etc.) to be changed or replaced without the need for further flow rate adjustment. Each choke plate 621 may be positioned at the joint surface between one of the second welds 630 and each one of the gas outlets 608 of the gas splitter 610. For example, the aperture of each gas outlet 608 of the gas splitter 610 may include a choke plate 621. As shown in the figure, each gas outlet 608 may define a slot that allows the choke plate 621 to be removed from and inserted into the joint surface between the gas outlet 608 and the second weld 630, and / or can be included in other ways. FIG. 8A is a schematic isometric view showing one embodiment of a choke plate 621 fixed to the gas outlet 608 of the gas splitter 610 (however, in some embodiments, alternatively or additionally, the inlet end of the second weld 630 can include a choke plate). The choke plate 621 can be received and fixed within a slot formed in the gas outlet 608. In some embodiments, as shown in the schematic cross-sectional top view of FIG. 8B, one or more O-rings can be used to seal the joint surface and prevent gas flowing through the choke plate 621 from leaking from the joint surface. Each choke plate 621 may define a central orifice 623 that is used to choke the flow of gas to each processing chamber.For example, the central orifice 623 of each choke plate 621 may have a reduced aperture size relative to the gas lumen 606 and the second weld 630. As shown, the upstream side of the central orifice 623 may have a smaller diameter than the downstream side of the central orifice 623. For example, the diameter of the central orifice 623 may be tapered and / or may increase rapidly in diameter from the upstream side to the downstream side of the choke plate 621. In other embodiments, the central orifice 623 may have a constant diameter across the thickness of the choke plate 621. By reducing the diameter of the central orifice 623 relative to the diameter of the gas lumen 606 / gas outlet 608 and the second weld 630, the central orifice 623 can function as a passive flow control device that allows downstream components (including output welds, manifolds, lid stacks, etc.) to be changed or replaced without the need for further flow regulation. Each central orifice 623 may have an inner diameter of from about 1.70 mm to about 2.40 mm, such as from about 1.80 mm to about 2.30 mm, from about 1.80 mm to about 2.10 mm, or from about 2.00 mm to about 2.30 mm. The diameter of the central orifice 623 may be the same or different across each choke plate 621. For example, if there are flow rate and / or deposition rate mismatches in one or more of the chambers, the choke plates 621 associated with one or more of the chambers can be replaced with choke plates 621 having central orifices 623 of different diameters. The difference in diameter can help correct any such mismatches to provide a more uniform flow rate and / or deposition rate across each processing chamber. In some embodiments, the system 600 can include a number of different choke plates 621 having central orifices 623 of different diameters. For example, a number of different choke plates 621 having diameters spaced apart by one or more intervals can be provided that allow the flow rate to each chamber to be carefully adjusted to the desired accuracy.The diameter intervals of the various central orifices 623 are from about 0.005 mm to 0.1 mm, from about 0.00725 mm to 0.075 mm, from about 0.01 mm to 0.05 mm, or from about 0.02 mm to 0.04 mm, and the smaller the interval, the higher the adjustment accuracy. The number and intervals of the central orifices 623 of the choke plate 621 provided with the system 600 may depend on the adjustment range of the flow rate and / or deposition rate mismatches and / or the desired uniformity accuracy.

[0051]

[0061] As described above, the first gas welding portion 615 may be coupled to a gas source such as the gas panel 695. FIG. 9 is a partial schematic isometric view showing the gas panel 695 and related components of the semiconductor processing system 600 according to some embodiments of the present technology. The first gas welding portion 615 may include a first gas welding portion inlet 618. The first gas welding portion 615 may extend to and be fluidly coupled to at least one gas mixing valve 680 such as the first gas welding portion inlet 618. The at least one gas mixing valve 680 may have a first valve inlet 681, a second valve inlet 682, and a valve outlet 683. The at least one gas mixing valve 680 can control the flow (on / off, flow rate, etc.) of each gas flowing into the first gas welding portion 615 and can be used to mix a plurality of gases before delivering the process gas to the gas splitter 610. The valve outlet 683 may be in fluid connection with the first gas welding portion inlet 618 of the first gas welding portion 615. It is contemplated that more than two valve inlets through which more than two process gases flow may be in fluid connection with the first gas welding portion inlet 618 of the first gas welding portion 615 via the at least one gas mixing valve 680. That is, a plurality of gas mixing valves can mix more than two process gases.

[0052]

[0062] As described above, the processing system 600 can include a gas panel 695. The gas panel 695 can include a first gas source 696 and a second gas source 697. The first gas source 696 may be fluidly coupled to the first valve inlet 681 by one or more welds or the like. The outlet of the first gas source 691 may be fluidly coupled directly or indirectly to the first gas weld 615 via one or more welds having an outlet that fluidly connects to the first gas weld 615. The second gas source 697 may be fluidly coupled to the second valve inlet 682 by one or more welds or the like. For example, the outlet of the second gas source 697 may be fluidly coupled to the first gas weld 615. One or more gas heaters 685 may be disposed upstream of one or more gas mixing valves. Each gas heater 685 can include an inlet and an outlet. The inlet may be coupled to the outlet of one or more gas sources, and the outlet of the gas heater 685 may be coupled to one of the valve inlets. This can enable one or more gases to flow through a gas heater 685 that can heat the gas to a desired temperature for a given processing step. As shown, the inlet of the gas heater 685 may be coupled to the outlet of the first gas source 696, and the outlet of the gas heater 685 may be coupled to the first valve inlet 681. The gas heater 685 can heat the first gas delivered from the first gas source 696 before delivering the first gas to the first valve inlet 681. The first gas and the second gas (supplied by the second gas source 697) may be mixed within the mixing valve 680 and may be flowed into the first gas weld 615 (via the valve outlet 683) for delivery to the gas splitter 610 and the processing chamber. In certain embodiments, the first gas may be an oxygen-containing precursor and / or a nitrogen-containing precursor, and the second gas may be a silicon-containing precursor, although other gas combinations are possible in various embodiments. The silicon-containing precursor may be, or may include, but is not limited to, tetraethyl orthosilicate (“TEOS”), silane, disilane, or other silicon-containing materials.The oxygen-containing precursor may be, for example, diatomic oxygen, ozone, or other oxygen-containing materials, or may include them. The nitrogen-containing precursor may incorporate oxygen, water, alcohol, or other materials. For example, in one embodiment, the first gas may be O2 that is heated before being mixed with TEOS (the second gas) and delivered to the gas splitter 610 for distribution to various processing chambers.

[0053]

[0063] As described above, various weld joints may be surrounded by a heater jacket such as the heater jacket 661. In an embodiment, the first gas weld joint 615 may be surrounded by one to six heater jackets, for example, one to five heater jackets, one to four heater jackets, one to three heater jackets, or one to two heater jackets. For example, the first gas weld joint 615 and / or other components (including the second weld joint 630) may each include one or more dedicated heater jackets 661. This may enable the use of any number of heater jackets 661 to fit the contour of the components surrounded by the jacket, and may simplify the manufacture, installation, and / or maintenance of the heater jackets 661 and / or the components surrounded by the jacket. Each heater jacket 661 can insulate all or part of each region of the gas delivery architecture to maintain the process gas at a desired temperature. For example, the process gas can be heated proximate to the gas panel 695 (via a gas heater 685, etc.) and / or within the gas splitter 610 (using a heater cartridge 607). The heater jacket 661 can help maintain the temperature of the heated process gas and can help reduce the power consumption of the processing system 600. The architecture of this embodiment may require fewer heating jackets than the prior art.

[0054]

[0064] The processing system 600 can include a bypass weld 665 proximate to the gas panel 695. The bypass weld 665 can be used to divert process gas from the processing chamber to the exhaust system. The process gas may be diverted from the processing chamber for any number of reasons. For example, the flow rate of the process gas to various chambers may be adjusted by diverting a portion of the process gas from one or more processing chambers, e.g., to equalize the flow to each chamber. In another example, the process gas can be diverted from each processing chamber while the gas panel or other gas source ramps up the flow rate of the process gas to full flow. This diversion of the process gas can be carried out such that only the full flow is reliably delivered to the chamber, which can help improve control of the deposition rate within each processing chamber. As shown, the bypass weld 665 may be coupled to the first input weld 615 downstream and / or downstream of at least one mixing valve 680. A bypass valve 666 may be positioned on the first gas weld 615 and / or fluidly coupled to the first gas weld 615 in other ways. The bypass valve 666 can include a valve inlet fluidly coupled to the gas panel 695. The bypass valve 666 may have a first bypass valve outlet and a second bypass valve outlet. The first bypass valve outlet may be in fluid communication with the first input weld 615. The second bypass valve outlet may be in fluid communication with the foreline 667 and / or the gas panel. Depending on whether it is necessary to divert the process gas, the bypass valve 666 can be opened to send some or all of the process gas to the bypass weld 665. The bypass valve 666 can be closed and / or otherwise actuated to allow gas to flow through the first bypass valve outlet to the first input weld 615. The bypass weld 665 may be in fluid communication with the foreline 667. The foreline 667 can pump out gas and particulates and / or otherwise exhaust them when the process gas is diverted from the processing chamber.

[0055]

[0065] FIG. 10 is a diagram showing the steps of an exemplary semiconductor processing method 1000 according to some embodiments of the present technology. This method can be executed using various processing systems including processing systems 100 and 600. The processing system can include any of the components, characteristics, or configurations described above. Method 1000 can include a number of optional steps that may or may not be particularly relevant to some embodiments of the methods according to the present technology.

[0056]

[0066] Method 1000 can be executed to heat, mix, and distribute process gas across various chambers to achieve a uniform flow rate and / or deposition rate. In optional step 1005, method 1000 can include combining at least a first process gas and a second process gas to form a mixed process gas. As described above, the process gas can include a silicon-containing precursor, an oxygen-containing precursor, and / or a nitrogen-containing precursor. However, it is envisioned that any combination of process gases can be combined. In one embodiment, the first process gas can be TEOS and the second process gas can be diatomic oxygen. As will be understood by those skilled in the art, other process gases or combinations of process gases can be used depending on the desired process being executed in the processing system.

[0057]

[0067] In step 1010, method 1000 can include heating at least one of at least two process gases before introducing the mixed process gas into the first gas welding section. For example, at least one gas can be passed through a gas heater to heat the gas. It is also possible to heat the mixed process gas, but in some embodiments, it is assumed that it may be desirable to heat only less than all of the process gases in the mixed process gas. For example, the second gas is heated (until the gases are combined to form a mixture), and the first gas is not heated. In other words, the heating step can be performed before and / or after combining the gases. The specific heating arrangement can be selected based on the properties or characteristics of the process gas delivered to the processing chamber. For example, when some individual process gases and / or the mixed process gas are heated, the properties of the gas and / or mixture may change. Further, in a high flow rate recipe, the heater jacket alone may not be sufficient to heat the gas to the desired temperature, and the use of a heater proximate to the gas panel may be required. In embodiments where the process gas includes TEOS and diatomic oxygen, the oxygen can be heated, but the TEOS may not be heated.

[0058]

[0068] In step 1015, method 1000 can include introducing a mixed process gas into the first gas welding section. The mixture can include at least two process gases. As described above, there may be a plurality of input welding sections to the gas splitter. However, in an embodiment, a single gas splitter, such as the first gas welding section, can supply all of the required mixed process gas. Further, the first gas welding section can have a plurality of outlets coupled to the gas splitter, and each outlet can send the same or a similar mixed process gas to the gas splitter. In step 1020, method 1000 can include flowing the mixed process gas into the gas splitter through a gas inlet. In step 1025, method 1000 can include dividing the flow of the mixed process gas into a plurality of gas lumens defined by the gas splitter. In step 1030, method 1000 can include flowing a portion of the mixed process gas into each processing chamber through a plurality of second gas welding sections coupled to the gas outlet ends of each of the plurality of gas lumens. In an embodiment, a portion of the mixed process gas can be delivered to each respective processing chamber.

[0059]

[0069] In optional step 1035, method 1000 can include directing a bypass portion of the mixed process gas toward the foreline. The gas can be bypassed using one or more welds and / or valves within and / or proximate to the gas panel and / or other gas source(s) (one or more). In optional step 1240, method 1200 can include flowing a bypass portion of the mixed process gas through a bypass weld and into the foreline and / or other destination. Each processing station can share a common bypass weld through which the bypass portion of the mixed process gas flows away from the processing system. The bypass of the gas can occur before the gas is heated, mixed, and / or flowed (e.g., before steps 1005, 1010, and / or 1015). For example, one or more of the gases can be bypassed to adjust the flow rate of the process gas to various chambers and / or to achieve another purpose until the gas source increases the flow rate of the process gas to the full flow rate.

[0060]

[0070] By using a single process feed weld in the gas splitter, a more uniform flow can be delivered to each processing chamber. Further, by using a single process weld, at the outlet of the gas splitter, multiple individual valves associated with the split portions of the feed are not required. A single valve controlling the flow of the process gas can reduce the potential for pressure spikes and / or timing mismatches associated with multiple valves. Along with adjustment of the orifice size, the more uniform flow can result in a more uniform deposition rate among the multiple processing chambers. Further, by using a single valve, the amount of power required by the system is reduced. Finally, by heating upstream of the inlet to the single process feed weld, the heating can be better controlled and the required power can be further reduced.

[0061]

[0071] In the foregoing description, for purposes of explanation, numerous details have been set forth in order to provide an understanding of various embodiments of the present technology. However, it will be apparent to one of ordinary skill in the art that certain embodiments can be practiced without some of these details or with additional details.

[0062]

[0072] Although several embodiments have been disclosed, those skilled in the art will recognize that various modifications, alternative structures, and equivalents can be used without departing from the gist of the embodiments. Further, to avoid unnecessarily obscuring the present technology, some well-known processes and elements have not been described. Therefore, the above description should not be construed as limiting the scope of the present technology.

[0063]

[0073] It should be understood that when a range of values is provided, unless the context clearly indicates otherwise, each intervening value, to the minimum part of the unit of the lower limit, between the upper and lower limits of that range is also specifically disclosed. Any narrower range between any of the recited values or the intervening values not recited in the recited range and any other recited value or intervening value in the recited range is also included. The upper and lower limits of these smaller ranges may independently be included in or excluded from the range, and each range in which one, or both, of the limiting values is included, or neither is included, is also included within the present technology, subject to any specifically excluded limiting value in the recited range. When one or both of the limiting values are included in the recited range, ranges excluding one or both of those included limiting values are also included.

[0064]

[0074] As used in this specification and the appended claims, the singular forms "a", "an", and "the" include plural references unless the context clearly dictates otherwise. Thus, for example, reference to "a lid" includes a plurality of the above lid plates, reference to "the gas splitter" includes reference to one or more gas splitters well known to those skilled in the art and their equivalents, and the like.

[0065]

[0075] Also, as used in this specification and the following claims, the terms "comprise," "comprising," "contain," "containing," "include," and "including" specify the presence of the stated features, integers, components, or steps, but do not preclude the presence or addition of one or more other features, integers, components, steps, acts, or groups.

Claims

1. A semiconductor processing system, comprising: a plurality of processing chambers, each processing chamber defining a processing area; a lid plate positioned above the plurality of processing chambers; a gas splitter seated on the lid plate, the gas splitter including an upper surface and a plurality of side surfaces; a single gas inlet; one or more gas outlets; one or more gas lumens extending between the single gas inlet and each of the one or more gas outlets, fluidly coupling the single gas inlet to each of the one or more gas outlets; a gas splitter defining the above; a first gas weld extending to the single gas inlet and fluidly coupled to the single gas inlet, the first gas weld delivering a mixed process gas to the plurality of processing chambers; at least one gas mixing valve having a first valve inlet, a second valve inlet, and a valve outlet, the valve outlet being coupled to an inlet end of the first gas weld; one or more second gas welds extending between each of the one or more gas outlets and one of the plurality of processing chambers, fluidly coupling each of the one or more gas outlets to one of the plurality of processing chambers; A semiconductor processing system comprising the above.

2. A gas panel including a first gas source fluidly coupled to the first valve inlet and a second gas source fluidly coupled to the second valve inlet; The semiconductor processing system according to claim 1, further comprising the above.

3. A gas heater disposed upstream of the at least one mixing valve and operable to preheat at least one of the mixed process gases; The semiconductor processing system according to claim 1, further comprising the above.

4. A bypass weld fluidly connected to the first gas weld proximate the gas panel; The semiconductor processing system according to claim 1, further comprising the above.

5. One or more orifices disposed between the one or more gas outlets and the plurality of processing chambers, each of the one or more orifices having an inner diameter smaller than an inner diameter of fluid lines disposed upstream and downstream of each of the one or more orifices; The semiconductor processing system according to claim 1, further comprising the above.

6. One to six heater jackets surrounding the first gas weld The semiconductor processing system according to claim 1, further comprising

7. A plurality of output manifolds seated on the lid plate, wherein each of the one or more second gas welding parts is fluidly coupled to one of the plurality of output manifolds The semiconductor processing system according to claim 1, further comprising

8. A semiconductor processing system, comprising A lid plate; A gas splitter seated on the lid plate, including an upper surface and a plurality of side surfaces, A gas inlet; One or more gas outlets; One or more gas lumens extending between each of the gas inlet and the one or more gas outlets and fluidly coupling the gas inlet to each of the one or more gas outlets A gas splitter defining; A first gas welding part extending to the gas inlet and fluidly coupled to the gas inlet, for delivering a mixed process gas to a plurality of processing chambers A gas panel including a first fluid source and a second fluid source each fluidly coupled to the first gas welding part; One or more second gas welding parts extending between each of the one or more gas outlets and one of the plurality of processing chambers and fluidly coupling each of the one or more gas outlets to one of the plurality of processing chambers A semiconductor processing system comprising

9. A gas heater fluidly connected to the first gas welding part, operable to preheat at least one of the mixed process gases The semiconductor processing system according to claim 8, further comprising

10. A bypass welding part fluidly connected to the first gas welding part proximate to the gas panel The semiconductor processing system according to claim 8, further comprising

11. One or more orifices between the one or more gas outlets and the plurality of processing chambers, each of the one or more orifices including an inner diameter smaller than the inner diameter of the fluid lines disposed upstream and downstream of each of the one or more orifices The semiconductor processing system according to claim 10, further comprising

12. The one or more orifices are removable so that the inner diameter of the one or more orifices can be changed The semiconductor processing system according to claim 11

13. Each of the one or more orifices includes an inner diameter of from about 1.70 mm to about 2.40 mm, The semiconductor processing system according to claim 12.

14. One to six heater jackets surrounding the first gas welding part The semiconductor processing system according to claim 8, further comprising.

15. At least one gas mixing valve having a first valve inlet, a second valve inlet, and a valve outlet, The first valve inlet is fluidly connected to a gas heater, and the gas heater is operable to heat the gas before it is sent to the first valve inlet, The valve outlet is coupled to an inlet end of the first gas welding part. At least one gas mixing valve The semiconductor processing system according to claim 8, further comprising.

16. A semiconductor processing method, Introducing a mixed process gas into a first gas welding part, the mixed process gas including at least two process gases, introducing the mixed process gas into the first gas welding part; Flowing the mixed process gas into a gas splitter through a gas inlet; Dividing the flow of the mixed process gas into a plurality of gas lumens defined by the gas splitter; Flowing a portion of the mixed process gas into respective processing chambers through a plurality of second gas welding parts coupled to gas outlet ends of each of the plurality of gas lumens Including, method.

17. Heating at least one of the mixed process gases before introducing the mixed process gas into the first gas welding part The semiconductor processing method according to claim 16, further comprising.

18. Directing a bypass portion of the mixed process gas to a bypass welding part; Flowing the bypass portion of the mixed process gas into a bypass foreline through the bypass welding part The semiconductor processing method according to claim 16, further comprising.

19. Combining at least a first process gas and a second process gas to form the mixed process gas The semiconductor processing method according to claim 16, further comprising.

20. The first process gas contains O ２ and the second process gas contains TEOS, O ２ Before combining with TEOS, heating O ２ including The semiconductor processing method according to claim 19.

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