Method for providing a wafer

Abstract

A method comprising providing an electrically insulating wafer having a first surface and a second surface for processing, and providing a layer on the first surface, the layer being non-metallic and electrically conductive for electrostatic clamping to an electrostatic chuck.

Description

[Background technology]

[0001] Electrostatic chucks are used to support wafers during the fabrication of circuits on the wafer, and it would be desirable to improve this technology for the fabrication of optical integrated circuits. [Brief explanation of the drawings]

[0002] [Figure 1] FIG. 1 is a flow diagram of the method described in the Examples. [Figure 2A] 1 shows a schematic cross-sectional side view of a structure during the implementation of a method according to an example. [Figure 2B] 2B shows a schematic top view of the structure of FIG. 2A. [Figure 2C] 1 shows a schematic cross-sectional side view of a structure during the implementation of a method according to an example. [Figure 2D] 2B shows a schematic bottom view of the structure of FIG. 2E. [Figure 2E] 1 shows a schematic cross-sectional side view of a structure during the implementation of a method according to an example. [Figure 2F] A schematic bottom view of the 2G structure is shown. [Figure 2G] 1 shows a schematic cross-sectional side view of a structure during the implementation of a method according to an example. [Figure 2H] 1 shows a schematic cross-sectional side view of a structure during the implementation of a method according to an example. [Figure 2I] 1 shows a schematic cross-sectional side view of a structure during the implementation of a method according to an example. [Figure 3] 10A-10C are schematic side cross-sectional views of various structures during the performance of a further example method; [Figure 4] 1A and 1B show schematic side cross-sectional views of various structures during the implementation of a further embodiment method. [Figure 5] 10A and 10B show schematic bottom views of structures during the implementation of a further embodiment method; DETAILED DESCRIPTION OF THE INVENTION

[0003] In the described example, the method includes providing an electrically insulating wafer. A layer is provided on a first surface (e.g., bottom surface) of the wafer. The layer is non-metallic, electrically conductive, and intended for electrostatic clamping to an electrostatic chuck. A second surface (e.g., top surface) of the wafer is intended for processing to fabricate circuits, such as, for example, photonic integrated circuits (PICs). Examples herein also relate to methods of fabricating devices, structures obtainable by the methods described herein, and devices obtainable by the methods described herein.

[0004] Electrostatic clamping of a wafer to an electrostatic chuck is used to reduce or prevent wafer displacement (e.g., rotation) during processing of the wafer surface, for example, to fabricate circuits. Such electrostatic clamping can cause less damage to the wafer than other clamping methods. However, electrostatic clamping can still damage the wafer and / or the circuit being fabricated. It has been found that such damage can result from interactions between the electric field applied for electrostatic clamping and the processing of the wafer (e.g., dry etching or plasma etching to fabricate circuits). Such damage is sometimes referred to as electrostatic damage. For example, electrostatic clamping in combination with plasma etching has been found to electrostatically damage and / or deform the wafer.

[0005] As explained in more detail in the examples below, it has been realized that the use of a non-metallic, conductive layer on the first surface of a wafer can reduce or prevent electrostatic damage. Reducing such electrostatic damage can improve the performance, reliability, and / or reproducibility of circuits fabricated on the wafer. It has also been recognized that the use of a non-metallic layer on the first surface of a wafer can reduce or prevent contamination of the circuits being fabricated and / or the wafer, for example, during etching for circuit fabrication. This contrasts with the use of a metal layer, which is susceptible to etching, during second surface processing. Furthermore, depending on the particular etchant used during second surface processing, the material of such a layer can reduce or avoid the need to replace layers on the first surface, which would otherwise require wafer release and reclamping, disrupting the manufacturing process. Reducing or avoiding the need to replace layers can reduce the time required for circuit fabrication and reduce circuit fabrication costs.

[0006] Before describing the examples in more detail, it is useful to clarify the meaning of some of the terms used herein. Further details of the various terms used herein are explained at the end of the description.

[0007] Electrostatic clamping of a wafer clamps the wafer to the electrostatic chuck by applying an electric field to the electrostatic chuck, coupling the wafer and the electrostatic chuck together. The electric field causes portions of the wafer and the electrostatic chuck to be oppositely charged, resulting in electrostatic attraction and clamping of the wafer to the electrostatic chuck. The clamping force between the wafer and the chuck increases with increasing voltage between the chuck and the wafer.

[0008] A metal layer, as referred to herein, is a layer containing a metal material. A metal layer on the first surface of a wafer is outside the scope of the examples described herein. A metal material is considered to be a material formed by metallic bonds between particles of the material. A metallic bond is an electrostatic attraction between delocalized conduction electrons and positively charged ions of a metal element. In contrast, a nonmetallic material is any material that is not a metal material. Thus, a nonmetallic layer has the properties of the nonmetallic material from which it is formed. More specifically, the nonmetallic material of the layer on the first surface is a nonmetallic conductive material, such as a nonmetallic conductive material containing at least one metal element. For example, the layer may include iron-doped indium phosphide (Fe-InP).

[0009] A general description of the embodiments of the present specification will now be provided with reference to Figures 1-2I. Figure 1 is a flow diagram of a method 100 according to an embodiment. Figures 2A, 2C, 2E, 2G, 2H, and 2I each show a schematic cross-sectional side view of a structure during the implementation of the method according to an embodiment. Figure 2B shows a top view of the structure of Figure 2A. Figures 2D and 2F show schematic bottom views of the structures of Figures 2E and 2G, respectively. The method 100 includes providing 101 an electrically insulating wafer 202 having a first surface 204 and a second surface 206. The second surface 206 is intended for processing, e.g., to fabricate circuits. Next, the method 100 includes providing 103 a layer 208 on the first surface 204 (see Figure 2C). The layer 208 is non-metallic, electrically conductive, and intended for electrostatic clamping to an electrostatic chuck. Figure 2C also shows a structure 250 obtained by providing 103 the layer 208 on the first surface 204.

[0010] Next, the method 100 includes electrostatically clamping 105 the layer 208 to the electrostatic chuck 210 (see FIGS. 2D and 2E). The surface 212 of the layer 208 is in contact with and electrostatically clamped to the electrostatic chuck 210. In other examples not shown, the layer and / or the surface of the layer do not contact the electrostatic chuck while the layer is electrostatically clamped to the electrostatic chuck. In FIGS. 2D and 2E, the layer 208 is between the surface 212 of the layer 208 and the electrically insulating wafer 202. The electrostatic chuck 210 is electrostatically clamped to the layer 208 by applying a voltage to at least one of the electrostatic chuck 210 or the layer 208, coupling the layer 208 to the electrostatic chuck 210. Several different electrical configurations for the electrostatic clamp are contemplated, which are described below. First surface 204 and second surface 206 are planar before and after electrostatically clamping layer 208 to electrostatic chuck 210. In another example (not shown), first surface 204 and second surface 206 are planar before electrostatically clamping layer 208 to electrostatic chuck 210, and at least one of first surface or second surface 206 is not planar after electrostatically clamping layer 208 to electrostatic chuck 210. Planar first surface 204 and second surface 206 may improve the performance of circuits fabricated on second surface 206, the repeatability of fabrication of circuits on second surface 206, and / or the reliability of circuits on second surface 206. Figures 2D and 2E also show a structure 252 obtained by electrostatically clamping 105 layer 208 to electrostatic chuck 210.

[0011] The method 100 then includes fabricating 107 a circuit 214 on the second surface 206 of the electrically insulating wafer 202 (see FIGS. 2F and 2G). The layer 208 is electrostatically clamped to the electrostatic chuck 210 during fabrication of the circuit 214. In other embodiments not shown, the layer is removed from the electrostatic chuck to at least partially fabricate the circuit. Fabrication of the circuit will be described in more detail below. FIGS. 2F and 2G also show a structure 254 resulting from fabricating 107 the circuit 214 on the second surface 206.

[0012] Next, the method 100 includes removing 109 the electrostatic chuck 210 from the layer 208 (see FIG. 2H). The layer 208 is on the first surface 204 of the wafer 202. In other embodiments not shown, removing the electrostatic chuck from the layer also includes at least partially removing the layer from the wafer. Details of electrostatic chuck removal are described further below. FIG. 2H also shows a structure 256 resulting from removing 109 the electrostatic chuck 210 from the layer 208.

[0013] The method 100 then includes removing 111 the layer 208 from the electrically insulating wafer 202 (transition from FIG. 2H or FIG. 2F and FIG. 2G to FIG. 2I). In various examples, the method includes at least partially removing the layer 208 from the electrically insulating wafer 202. FIG. 2I shows the layer 208 separated from the first surface 204 of the layer 202. In examples not shown, the layer is destroyed, physically altered, or chemically altered, thereby at least partially removing the layer. Removing the layer from the wafer and / or at least partially removing the layer from the wafer may include at least one of etching, polishing, or grinding the layer. Other techniques for removing or at least partially removing a layer are contemplated. FIG. 2I also illustrates an exemplary structure 258 obtained by removing 111 the layer 208 from the wafer 202.

[0014] A further embodiment will now be described with reference to FIG. 3. FIG. 3 schematically illustrates a cross-sectional side view of a structure during a method of a further embodiment. A layer 308 is on a first surface 304 of an electrically insulating wafer 302. Where features relating to FIG. 3 correspond to features described using FIGS. 2A-2I, reference numbers 100 higher than the corresponding reference numbers used in FIGS. 2A-2I are used (e.g., 202 in FIG. 2C is 302 in FIG. 3), and the corresponding descriptions for such features also apply herein. The layer 308 includes a portion 326 (e.g., a lower sublayer of the layer) that is an etch resist and is therefore resistant to a given etchant (e.g., used in circuit fabrication). In an embodiment not shown, the layer includes multiple portions (e.g., sublayers) that each function as an etch resist. Other configurations or arrangements of the multiple portions are contemplated. FIG. 3 also illustrates a structure 360 ​​in which the layer 308 includes a portion 326 that is an etch resist. Dashed lines are used to indicate boundaries between portions of the layer.

[0015] Further embodiments will now be described with reference to FIGS. 4A and 4B. FIGS. 4A and 4B schematically illustrate cross-sectional side views of a structure during a method of a further embodiment. Where features relating to FIGS. 4A and 4B correspond to features described using FIGS. 2A-2I, reference numbers 200 higher than the corresponding reference numbers used in FIGS. 2A-2I are used (e.g., 202 in FIG. 2C is 402 in FIG. 4B), and the corresponding descriptions for such features also apply herein. FIG. 4A illustrates providing a precursor 420 to a layer 408 and a wafer 402. The precursor includes a first portion 416 and a second portion 418. The method then includes doping at least one of the first portion 416 or the second portion 418 to form a layer 408 from the first portion 416 of the precursor 420 and a wafer 402 from the second portion 418 of the precursor 420 (layer 408 and wafer 402 shown in FIG. 4B). Doping may include implantation of ions into at least one of the first portion 416 or the second portion 418, or diffusion of ions into at least one of the first portion 416 or the second portion 418. Those skilled in the art will be familiar with such doping techniques. FIG. 4B shows a layer 408 formed from the first portion 416 and a wafer 402 formed from the second portion 418. FIG. 4B also shows a structure 462 obtained by doping at least one of the first portion 416 or the second portion 418 to form the layer 408 from the first portion 416 and the wafer 402 from the second portion 418.

[0016] A further embodiment will now be described with reference to FIG. 5. FIG. 5 schematically illustrates a bottom view of a structure during a method of a further embodiment. Where features relating to FIG. 5 correspond to features described using FIGS. 2A-2I, reference numbers 300 higher than the corresponding reference numbers used in FIGS. 2A-2I are used (e.g., 202 in FIG. 2C is 502 in FIG. 5), and the corresponding description for such features also applies herein. Layer 508 includes first portion 522 and second portion 524. First portion 522 and second portion 524 may be configured to reduce electrostatic damage to electrically insulating wafer 502, for example, by reducing the electric field gradient on the first or second surface. First portion 522 and second portion 524 may be configured to reduce bowing of wafer 502 due to electrostatic damage. Other configurations or arrangements of first portion 522 and second portion 524 in the illustrated configuration are envisioned, such as an array or mesh. FIG. 5 also illustrates structure 564 obtained by providing layer 508 on the first surface. Dashed lines are used to indicate boundaries between portions of layers.

[0017] The various embodiments herein will now be described without reference to the figures.

[0018] In various embodiments, a layer on the first surface of a wafer improves the performance of a circuit fabricated on the second surface of the wafer. For example, the layer may increase the reproducibility of manufacturing the circuit on the second surface of the wafer. The stiffness of the layer may be greater than the stiffness of the wafer. The heat capacity of the layer may be greater than the heat capacity of the wafer. The greater stiffness and / or heat capacity of the layer compared to the wafer may reduce the effects of mechanical forces or temperature changes, respectively, on the circuit on the second surface of the wafer, thereby improving the performance of the circuit. Portions of the layer may have anti-reflective properties. Anti-reflective properties may be desirable for PICs, for example, to reduce losses due to light leaking from the PIC. The material of the layer may also be selected to be compatible with the wafer. For example, the thermal conductivity of the wafer may be the same as the thermal conductivity of the layer and / or the thermal expansion coefficient of the wafer may be the same as the thermal expansion coefficient of the layer. The dry etching resistance of the wafer may be the same as the dry etching resistance of the layer. The plasma etching resistance of the wafer may be the same as the plasma etching resistance of the layer. Etch resistance herein is measured, for example, as the volume of material etched per unit time and is dependent on the etching technique. When comparisons of thermal conductivity, thermal expansion coefficient, and etch resistance are made herein, the same conditions, such as pressure or etching solution, are assumed. The same herein means less than at least one of 1, 2, 5, 10, 20, or 50 percent more or less. Having the same thermal conductivity, thermal expansion coefficient, dry etch resistance, wet etch resistance, and / or plasma etch resistance of the layer and wafer can simplify wafer processing, simplify the fabrication of circuits on the second surface of the wafer, and / or improve the performance of the circuits on the second surface of the wafer.

[0019] In various embodiments, providing a layer and / or providing an electrically insulating wafer may involve techniques for at least partially forming a substrate, waveguide, semiconductor portion, or electrode, including at least one of surface passivation, photolithography, ion implantation, etching, dry etching, ion etching, wet etching, buffered oxide etching, plasma ashing, heat treatment, annealing, thermal oxidation, chemical vapor deposition, atomic layer deposition, laser lift-off, electrochemical deposition, electroplating, physical vapor deposition, or chemical-mechanical polishing. As one skilled in the art will appreciate, etching may be used to remove at least a portion of a layer, but not all of the layer.

[0020] In various embodiments, the method includes epitaxially forming at least a portion of a layer on the first surface. The layer can be epitaxially formed using metalorganic vapor phase epitaxy (MOVPE) or molecular beam epitaxy (MBE). Other epitaxy techniques are contemplated. The method can include bonding at least a portion of the layer to the first surface. Bonding can include, for example, forming a chemical bond, forming a mechanical bond, fusion bonding, thermocompression of gold, anodic bonding, heat treatment, photocuring, exposure to a catalyst, and / or application of pressure. Other bonding techniques are contemplated.

[0021] Processing the second surface can include, for example, various techniques for bonding layers to the second surface, etching, and / or other techniques, for example, to fabricate a circuit. Fabricating a circuit on the second surface can include at least one of etching, epitaxy, dry etching, plasma etching, or lithography. For example, fabricating a circuit can include at least one of etching at least a portion of the second surface to at least partially form the circuit, etching at least a portion of an etching precursor to the circuit to at least partially form the circuit, the etching precursor being on the second surface, etching, lithography at least a portion of the second surface to at least partially form the circuit, lithography at least a portion of a lithography precursor to the circuit to at least partially form the circuit, the lithography precursor being on the second surface, epitaxially forming at least a portion of the circuit on the second surface, or epitaxially forming a precursor to the circuit on the second surface. The precursor is a precursor to the circuit. The etching precursor is, for example, an etching resist. The lithographic precursor is, for example, a lithographic resist.

[0022] The circuitry may be at least one of a PIC or an electrical integrated circuit (IC). Other circuits are also contemplated. The circuitry may include at least one of silicon, gallium, germanium, lithium niobate, graphene, indium, or an alloy, oxide, nitride, or phosphide of at least one of such. Those skilled in the art will readily understand how to fabricate the circuitry on the second surface using techniques such as, for example, metalorganic vapor deposition, surface passivation, photolithography, ion implantation, etching, dry etching, ion etching, wet etching, buffered oxide etching, plasma ashing, heat treatment, annealing, thermal oxidation, chemical vapor deposition, atomic layer deposition, physical vapor deposition, molecular beam epitaxy, laser lift-off, electrochemical deposition, electroplating, or chemical-mechanical polishing.

[0023] The circuit may be a PIC or for a PIC. The circuit may be formed using a general-purpose optical platform. A general-purpose optical platform uses standardized processes and / or standardized optical components to manufacture optical components. Forming a circuit using a general-purpose optical platform may be easier, cheaper, faster, and have wider applications. A commercially available material platform for PICs is indium phosphide. Optically active and passive functions may be integrated on the same chip by fabricating the PIC using an indium phosphide (InP) general-purpose platform. Other material platforms, such as silicon, gallium arsenide, or lithium niobium, may be used as the platform for the PIC. A PIC may contain hundreds of components integrated on a single chip.

[0024] Examples herein relate to methods of fabricating a device, including any of the methods described herein. Further examples relate to devices obtained by the methods described herein. The devices may be electronic and / or optical devices. The first and second surfaces of a wafer obtained by a method described herein may be planar relative to wafers obtained by other methods not described herein. Devices obtained by methods described herein may have improved performance compared to devices obtained by known techniques not described herein.

[0025] Certain terms, techniques, and features of the present specification will now be detailed.

[0026] The electrostatic chuck herein may be a Coulomb-type electrostatic chuck or a Johnsen-Rahbek-type electrostatic chuck. A Coulomb-type electrostatic chuck includes an electrode and an electrical insulator. The electrical insulator is configured to be between the electrode and the wafer when the electrostatic chuck is clamped to the wafer. A Johnsen-Rahbek-type electrostatic chuck includes an electrode and a dielectric. The dielectric is configured to be between the electrode and the wafer when the electrostatic chuck is clamped to the wafer. The electrostatic chuck may include a monopole, a dipole, or a dipole for applying an electric field, and such electrostatic chucks may be referred to as monopolar, bipolar, or bipolar electrostatic chucks, respectively. Electrostatic clamping and / or fabricating circuits on an electrostatically clamped wafer may include flowing a fluid over the wafer. The fluid may be an inert gas, such as helium. Electrostatic clamping by applying an electric field to the electrostatic chuck may include applying an electromotive force to one or more electrodes of the electrostatic chuck. The electromotive force for electrostatic clamping while there is no fluid flow over the wafer is, for example, greater than at least one of 400 volts, 500 volts, 700 volts, 1000 volts, 1500 volts, 5000 volts, or 10,000 volts. The electromotive force applied to one or more electrodes of the electrostatic chuck for electrostatic clamping with fluid flow over the wafer is, for example, greater than at least one of 700 volts, 800 volts, 1000 volts, 1500 volts, 5000 volts, or 10,000 volts. Volts (V) are defined as kilogram meters squared per second and amperes cubed (kg m 2 ·s -3 A -1 ). The electrostatic chuck may be detached (or electrostatically unclamped) from the layer by reducing the electric field applied to the electrostatic chuck or at least one of the layer, for example, reducing the electromotive force applied to the electrode(s) of the electrostatic chuck. A mechanical force can be used to remove the electrostatic chuck from the layer.

[0027] Wafers herein may also be considered slices, substrates, or chips. The term wafer is used herein to refer to a relatively thin (e.g., planar) portion of material, which may be crystalline. A wafer may be a crystalline semiconductor or dielectric disk for use in a semiconductor foundry, such as a 300 millimeter disk of silicon. A wafer may be a crystalline InP disk for use in a semiconductor foundry. A wafer may be a 25 millimeter, 51 millimeter, 76 millimeter, 100 millimeter, 200 millimeter, or 300 millimeter diameter disk.

[0028] Although a wafer as referred to herein may be, for example, a single layer of the same homogeneous material, in other examples, it is contemplated that a wafer may instead include one or more sublayers or portions, each deposited or formed independently of one another (e.g., one after the other during a manufacturing process to form a stack of layers that together can be considered a wafer). A wafer may, for example, include portions of different materials due to manufacturing.

[0029] The wafers herein may be semiconductors, III-V semiconductors, polymers, and / or dielectrics. The wafers may include at least one of silicon, gallium, germanium, lithium niobate, graphene, and indium, or alloys, oxides, nitrides, or phosphides of at least one of such materials. The wafers may include an electrical insulator, which may be an electrically insulating material and / or an electrically insulating structure. The wafers may reduce or prevent electrical crosstalk and / or ionic and / or electronic conductance between the first and second surfaces. The electrical conductivity of the wafers at 20°C (293 Kelvin) may be less than at least one of 0.00001 siemens / meter, 0.0001 siemens / meter, 0.001 siemens / meter, 0.01 siemens / meter, 0.1 siemens / meter, 1 siemens / meter, and 10 siemens / meter. Siemens per meter (S / m) is the unit of ampere-squared seconds per kilogram per cubic meter (kg -1 m -3 ·s3 A 2 The electrical resistance of the wafer at 20°C (293 Kelvin) can exceed at least one of 0.1 ohm-meter, 1 ohm-meter, 10 ohm-meter, 100 ohm-meter, 1000 ohm-meter, 10,000 ohm-meter, or 100,000 ohm-meter. An ohm-meter (Ω·m) is kilogram·cubic meter per ampere-squared per second-cubed (kg·m 3 ·s -3 A -2 ).

[0030] While a layer described herein can be, for example, a single layer of the same homogeneous material, in other examples, it is contemplated that a layer may instead include one or more sublayers or portions, each deposited or formed independently of one another (e.g., one after the other during a manufacturing process to form a stack of sublayers that together can be considered a layer). A layer may have subportions of different materials, for example, due to manufacturing. The subportions of a layer may have different dopant concentrations.

[0031] A metallic element herein is an element that is not hydrogen, helium, boron, carbon, nitrogen, oxygen, fluorine, neon, silicon, phosphorus, sulfur, chlorine, argon, germanium, arsenic, selenium, bromine, krypton, antimony, tellurium, iodine, xenon, or radon. A metallic element can be considered an element that is a metallic material when separated at 293 Kelvin. Examples of metallic elements include indium, gallium, tin, lithium, niobium, zinc, and iron. Metalloid elements are not considered metallic elements.

[0032] The non-metallic conductive material may include, for example, at least one of a semiconductor, a dielectric, an n-type semiconductor, a metalloid, a III-V semiconductor, silicon, gallium, germanium, lithium niobate, graphene, and indium, or an alloy, oxide, nitride, or phosphide of at least one of the foregoing. The wafer may include indium phosphide, and the layer may include n-doped indium phosphide. Semimetals herein include boron, silicon, germanium, arsenic, antimony, and tellurium. The non-metallic conductive material may be a conductive material and / or a conductive structure. In some examples, the electrical conductivity of the layer does not reduce or prevent electrical crosstalk and / or significant conductance of ions and / or electrons across the layer. The electrical conductivity of the layer at 20°C (293 Kelvin) may exceed at least one of 0.1 siemens / meter, 1 siemens / meter, 10 siemens / meter, 100 siemens / meter, 1000 siemens / meter, 10,000 siemens / meter, or 100,000 siemens / meter. Siemens / meter (S / m) is defined as kilogram per cubic meter per ampere squared per second cubed (kg -1 m -3 ·s 3 A 2 ). The electrical resistance of the layer at 20°C (293 Kelvin) can be less than at least one of 0.00001 ohm-meter, 0.0001 ohm-meter, 0.001 ohm-meter, 0.01 ohm-meter, 0.1 ohm-meter, 1 ohm-meter, or 10 ohm-meters. An ohm-meter (Ω·m) is equal to kilogram·cubic meter per ampere-squared per second-cubed (kg·m 3 ·s -3 A -2 ).

[0033] It will be understood that any feature described in connection with any one of the embodiments may be used alone or in combination with the other features described, and in combination with one or more other features of any of the embodiments, or in any other combination of any of the embodiments. Furthermore, equivalents and modifications not described above may also be employed without departing from the scope of the appended claims.

Claims

1. providing an electrically insulating wafer including a first surface and a second surface for processing; providing a layer on the first surface; The method wherein the layer is non-metallic, electrically conductive, and for electrostatic clamping to an electrostatic chuck.

2. The method of claim 1 , comprising epitaxially forming at least a portion of the layer on the first surface.

3. The method of claim 1 or 2, comprising bonding at least a portion of the layer to the first surface.

4. The method according to any one of claims 1 to 3, wherein the layer comprises a non-metallic conductive material containing at least one metallic element.

5. The method of any one of claims 1 to 4, wherein the layer comprises at least one of a semiconductor, a III-V semiconductor, an n-doped semiconductor, or a dielectric.

6. The method of any one of claims 1 to 5, comprising electrostatically clamping the layer to the electrostatic chuck.

7. 7. The method of claim 6, wherein the first surface and the second surface are planar after electrostatically clamping the layer to the electrostatic chuck.

8. The method of claim 6 or 7, further comprising removing the electrostatic chuck from the layer.

9. The method of any one of claims 1 to 8, comprising fabricating a circuit on the second surface.

10. etching at least a portion of the second surface to at least partially form the circuit; etching at least a portion of an etching precursor into the circuitry to at least partially form the circuitry, the etching precursor being on the second surface; lithographically lithographing at least a portion of the second surface to at least partially form the circuitry; lithographing at least a portion of a lithographic precursor to the circuitry to at least partially form the circuitry, the lithographic precursor being on the second surface; epitaxially forming at least a portion of the circuitry on the second surface; or epitaxially forming a precursor to the circuitry on the second surface; The method of claim 9 , comprising at least one of:

11. 11. The method of claim 9 or 10, wherein the circuit is at least one of an integrated circuit or an optical integrated circuit.

12. The method includes etching; The method of any one of claims 1 to 11, wherein the layer comprises an etch resist.

13. The method according to any one of claims 1 to 12, wherein the thermal conductivity of the electrically insulating wafer is the same as the thermal conductivity of the layer.

14. The method according to any one of the preceding claims, wherein the thermal expansion coefficient of the electrically insulating wafer is the same as the thermal expansion coefficient of the layer.

15. the dry etching resistance of the wafer is the same as the dry etching resistance of the layer; or the resistance to plasma etching of the electrically insulating wafer is the same as the resistance to plasma etching of the layer; The method according to any one of claims 1 to 14, comprising at least one of:

16. providing a precursor of the layer and the electrically insulating wafer, the precursor including a first portion and a second portion; doping at least one of the first or second portions of the precursor to form the layer from the first portion of the precursor and the electrically insulating wafer from the second portion of the precursor.

17. The method according to any one of the preceding claims, wherein the stiffness of the layer is greater than the stiffness of the electrically insulating wafer.

18. The method according to any one of the preceding claims, wherein the heat capacity of the layer is greater than the heat capacity of the electrically insulating wafer.

19. at least partially removing the layer from the electrically insulating wafer; or The method of any one of claims 1 to 18, comprising removing the layer from the electrically insulating wafer.

20. The method of any one of claims 1 to 19, wherein part of the layer has anti-reflective properties.

21. The method of any one of claims 1 to 20, wherein the electrically insulating wafer comprises at least one of a dielectric, a semiconductor, a III-V semiconductor, silicon, or indium phosphide.

22. the electrically insulating wafer comprises indium phosphide; The method of any one of claims 1 to 21, wherein the layer comprises n-doped indium phosphide.

23. A structure obtained by the method according to any one of claims 1 to 22.

24. 1. A method of manufacturing a device, comprising: A method comprising the method of any one of claims 1 to 22.

25. A device obtained by the method of claim 24.

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