Line beam light source radiation device and equipment

Abstract

The line beam light source emitting device includes a plurality of vertical cavity surface emitting laser chips (101) and a circuit board (102), the circuit board (102) including a driving circuit, each vertical cavity surface emitting laser chip (101) including a light emitting area, the light emitting area of ​​each vertical cavity surface emitting laser chip (101) including a first edge and a second edge, the vertical cavity surface emitting laser chips (101) arranged in parallel along the first edge of the light emitting area and fixed to the circuit board (102), the first pole and the second pole of each vertical cavity surface emitting laser chip (101) respectively connected to the driving circuit, each vertical cavity surface emitting laser chip (101) connected by the driving circuit, the driving circuit driving the laser emission of each vertical cavity surface emitting laser chip (101), the reliability of the line beam light source emitting device can be improved and power attenuation can be reduced when the temperature change range of the operating environment is relatively large.

Description

[Technical Field]

[0001] [CROSS-REFERENCE TO RELATED APPLICATIONS] This application claims priority to a Chinese patent application for the invention "Line beam light source emitting device and apparatus" filed with the State Intellectual Property Office of the People's Republic of China on August 18, 2022, bearing application number 202210993240.0, the entire contents of which are incorporated herein by reference.

[0002] FIELD OF THE INVENTION This application relates to the field of laser technology, and more particularly to line beam light source emitting devices and instruments. [Background technology]

[0003] With the rapid development of laser technology, people are constantly using lasers to perform distance detection, depth detection, laser communication, laser illumination, etc. in industrial or electronic fields, and lasers can be tailored into line beams according to actual needs.

[0004] In the related art, a high-power line beam device of several kilowatts is generally constructed using multiple edge-emitting lasers (abbreviated as EELs), and multiple lasers are emitted by the multiple EELs to form a light source such as a bright line beam, cross beam, or planar beam, thereby achieving the purposes of illumination, detection, and communication.

[0005] However, because the spectral shift coefficient of the EEL due to temperature changes is relatively large, when the temperature difference in the operating environment is relatively large, the spectral position collected by the device will change, further affecting the accuracy of detection and communication.In addition, the power attenuation situation over a wide temperature range of the EEL is relatively serious, even reaching 50%.As a result, when the temperature change range of the operating environment is large, the solutions in the related art have problems of low reliability and large power attenuation. Summary of the Invention [Problem to be solved by the invention]

[0006] The objective of the present application is to provide a line beam light source radiation device and equipment that can improve the reliability of the line beam light source radiation device and reduce power decay when the temperature change range of the operating environment is relatively large. [Means for solving the problem]

[0007] The embodiment of the present application is implemented as follows.

[0008] A first aspect of an embodiment of the present application provides a line beam light source emitting device, the device including a plurality of Vertical Cavity Surface Emitting Laser (VCSEL) chips, a printed circuit board (PCB), the circuit board including a driving circuit; Each of the vertical cavity surface emitting laser chips includes a light emitting region, the light emitting region includes a plurality of light emitting points, and each of the light emitting points is used to emit a laser beam; an emission area of ​​each of the vertical cavity surface emitting laser chips includes a first edge and a second edge, and a length of the first edge is greater than a length of the second edge; The vertical cavity surface-emitting laser chips are arranged in parallel along a first edge of the light-emitting region and fixed to the circuit board, and a first pole and a second pole of each of the vertical cavity surface-emitting laser chips are respectively connected to the drive circuit, and the drive circuit drives laser emission of each of the vertical cavity surface-emitting laser chips.

[0009] Optionally, the light emitting area of ​​each said vertical cavity surface emitting laser chip is a rectangular area.

[0010] Optionally, the apparatus further comprises a sub-heat sink; the sub-heat sink is fixed to the circuit board, and the vertical cavity surface emitting laser chips are arranged in parallel along a first edge of the light emitting region and coupled to the sub-heat sink; The first pole and / or the second pole of each of the vertical cavity surface emitting laser chips is connected to the driving circuit by the sub-heat sink.

[0011] Optionally, a first surface of the sub-heatsink has a plurality of pads, and the sub-heatsink further has a plurality of vias, and a second surface of the sub-heatsink abuts a top surface of the circuit board; Each of the pad groups includes one first pad, each of the via groups includes a first via, and each of the first vias is provided with a first conductive path; Each of the first vias penetrates the sub-heat sink, the size of each of the first pads is larger than the size of each of the first vias, and each of the first vias is used to connect a first pole of each of the vertical cavity surface emitting laser chips to a circuit on the circuit board.

[0012] Optionally, each of said pad groups further comprises at least one second pad, and each of said via groups further comprises at least one second via, a second conductive path being provided within each of said second vias; Each of the second pads is located on at least one side of each of the first pads, and each of the second pads is not connected to each of the first pads; Each of the second vias penetrates the sub-heat sink, the size of each of the second pads is larger than the size of each of the second vias, and each of the second vias is used to connect a second pole of each of the vertical cavity surface emitting laser chips to a circuit on the circuit board.

[0013] Optionally, the apparatus further comprises an optical shaping module; The optical shaping module is provided on one side of the light-emitting area of ​​each of the vertical cavity surface-emitting laser chips, and is used to collimate and / or homogenize the laser emitted from each of the vertical cavity surface-emitting laser chips in a first direction and / or a second direction, and the first direction and the second direction are perpendicular to each other.

[0014] Optionally, first poles of each of the vertical cavity surface emitting laser chips are both connected to a first common point on the drive circuit, and second poles of each of the vertical cavity surface emitting laser chips are both connected to a second common point on the drive circuit.

[0015] Optionally, a first pole of the first vertical cavity surface-emitting laser chip and a second pole of the second vertical cavity surface-emitting laser chip are connected to a third common point on the drive circuit, such that the first vertical cavity surface-emitting laser chip and the second vertical cavity surface-emitting laser chip are connected in series, where the first vertical cavity surface-emitting laser chip and the second vertical cavity surface-emitting laser chip are two adjacently arranged vertical cavity surface-emitting laser chips among each of the vertical cavity surface-emitting laser chips.

[0016] Optionally, a length of a second edge of the light emitting region of each said vertical cavity surface emitting laser chip is not less than 30 micrometers and not more than 100 micrometers.

[0017] A second aspect of the present invention provides a line beam light source emitting device, the device including a housing and the line beam light source emitting device according to the first aspect, the housing being used to fix the line beam light source emitting device. [Effects of the Invention]

[0018] Beneficial effects of embodiments of the present application include:

[0019] An embodiment of the present application provides a line beam light source emitting device, the line beam light source emitting device including a plurality of VCSEL chips and a PCB, the PCB including a driving circuit. Each VCSEL chip includes a light emitting area, the light emitting area including a plurality of light emitting points, each of which is used to emit a laser. The light emitting area of ​​each VCSEL chip includes a first edge and a second edge. The VCSEL chips are arranged in parallel along the first edge of the light emitting area and fixed to the PCB, and the first pole and the second pole of each VCSEL chip are respectively connected to the driving circuit, and the driving circuit drives the laser emission of each VCSEL chip.

[0020] However, the first pole and the second pole of each VCSEL chip can be connected to the driving circuit, respectively, and each VCSEL chip is connected via the driving circuit. When the first pole and the second pole of each VCSEL chip are connected to the driving circuit, each VCSEL chip can be connected to the driving circuit, and the driving circuit can supply power to each VCSEL chip and control parameters such as the time, frequency, and intensity at which each VCSEL chip emits laser light. Because the bottom surface of the VCSEL chip is fixed to the top surface of the PCB, the first pole of each VCSEL chip can be directly connected to the driving circuit on the PCB, thus shortening the current conduction path and reducing the parasitic inductance when each VCSEL chip is operating, so that the line beam light source emitting device can obtain a short pulse width.

[0021] When the driving circuit of the PCB supplies power to each VCSEL chip, the VCSEL chip can be powered on and operated to emit laser light. The VCSEL chips are arranged in parallel along the first edge of their light-emitting regions, i.e., along the length of their light-emitting regions, so that the light-emitting regions of the VCSEL chips in the line beam light source emitting device form a long light-emitting region along the first edge. When laser light is emitted by this long light-emitting region, the laser light emitted from the line beam light source emitting device can form a line beam. By arranging the VCSEL chips in parallel along the first edge of their light-emitting regions, it is further ensured that the divergence angle in the slow axis direction of the laser light emitted from the line beam light source emitting device is not affected. This allows the line beam light source emitting device to emit laser light at a higher power, thereby achieving a high power.

[0022] The VCSEL chip has a very small spectral shift coefficient with temperature changes, and its power attenuation is relatively low within a wide temperature range, generally less than 20%. Since the line beam light source emitting device provided in the embodiments of the present application uses a VCSEL chip, the line beam light source emitting device has a relatively small spectral shift coefficient with temperature changes, and its power attenuation is also relatively low within a wide temperature range. Thus, when the temperature change range of the operating environment is relatively large, the reliability of the line beam light source emitting device can be improved and the power attenuation can be reduced.

[0023] Furthermore, when using the line beam light source emitting device to perform distance detection, depth detection, or laser communication, it is necessary to use one receiving device to receive the laser emitted from each VCSEL chip. Since the line beam light source emitting device has relatively low power attenuation over a wide temperature range, the laser emitted from the line beam light source emitting device can be received by a receiving device with relatively low precision, thereby improving the versatility and universality of the line beam light source emitting device.

[0024] In this way, the reliability of the line beam light source radiation device can be improved and power attenuation can be reduced when the temperature change range of the operating environment is large, and the versatility and universality of the line beam light source radiation device can also be improved. [Brief explanation of the drawings]

[0025] In order to more clearly explain the technical solutions in the embodiments of the present application, the following briefly introduces drawings that need to be used in the embodiments. However, the following drawings are only for illustrating some embodiments of the present application and should not be regarded as limiting the scope. It should be understood that a person skilled in the art can derive other drawings based on these drawings without any creative efforts. [Figure 1] 1 is a schematic diagram of the structure of a first type of line beam light source radiation device provided in an embodiment of the present application; [Figure 2] 1 is a schematic diagram of the structure of two types of line beam light source radiation devices provided in the embodiments of the present application; [Figure 3] 1A and 1B are schematic diagrams illustrating the structure of three types of line beam light source radiation devices provided in the embodiments of the present application. [Figure 4] 1 is a schematic diagram of the structure of a fourth type of line beam light source radiation device provided in an embodiment of the present application; [Figure 5] 1 is a schematic diagram of the structure of the fifth type of line beam light source radiation device provided in the embodiments of the present application. [Figure 6] 1 is a schematic diagram of the structure of the sixth type of line beam light source radiation device provided in the embodiment of the present application. [Figure 7] 1 is a schematic diagram of the structure of the seventh type of line beam light source radiation device provided in the embodiment of the present application. [Figure 8] 1 is a schematic diagram of the structure of the eighth type of line beam light source radiation device provided in the embodiment of the present application. [Figure 9] 1 is a schematic diagram of the structure of the ninth type of line beam light source radiation device provided in the embodiment of the present application. [Figure 10] 1 is a schematic diagram of the structure of the tenth type of line beam light source radiation device provided in the embodiment of the present application. [Figure 11] 1 is a schematic diagram of the structure of the eleventh type of line beam light source radiation device provided in the embodiment of the present application. [Figure 12] 1 is a schematic diagram of the structure of the eleventh type of line beam light source radiation device provided in the embodiment of the present application. [Figure 13] 1 is a schematic diagram of the structure of a line beam light source radiation device provided in an embodiment of the present application; [Figure 14] 1 is a flowchart of a packaging method for a line beam light source radiation device provided in an embodiment of the present application. DETAILED DESCRIPTION OF THE INVENTION

[0026] In order to make the objectives, technical solutions and advantages of the embodiments of the present application clearer, the technical solutions of the embodiments of the present application will be described clearly and completely in accordance with the drawings in the embodiments of the present application, but it is clear that the described embodiments are only a part of the embodiments of the present application, and are not all of the embodiments of the present application. Generally, the assemblies of the embodiments of the present application described and shown in the drawings can be arranged and designed in different configurations.

[0027] Therefore, the detailed description of the embodiments of the present application provided in the drawings below does not limit the scope of the claimed application, but merely illustrates selected embodiments of the present application. Based on the embodiments of the present application, all other embodiments that can be devised by a person skilled in the art without any creative effort are within the scope of protection of the present application.

[0028] It should be noted that in the following drawings, like symbols and letters indicate like items, and therefore, once an item is defined in one drawing, it need not be further defined and interpreted in subsequent drawings.

[0029] In addition, in the description of this application, the orientations and positional relationships indicated by terms such as "center," "up," "down," "left," "right," "vertical," "horizontal," "inside," and "outside" are orientations and positional relationships based on the drawings or orientations and positional relationships generally used when using the product of the invention, and are merely for the convenience and simplification of the description of this application. They do not indicate or imply that the devices or elements referred to necessarily have a specific direction or are configured or operated in a specific orientation, and therefore cannot be understood as limiting this application. Furthermore, terms such as "first," "second," and "third" are merely used for distinction and explanation, and cannot be understood as indicating or implying relative importance.

[0030] Additionally, terms such as "horizontal" and "vertical" mean that a member is absolutely horizontal, not suspended, and may be slightly tilted. For example, "horizontal" simply means that the orientation is more horizontal than "vertical," meaning that the structure is not necessarily perfectly horizontal and may be slightly tilted.

[0031] In the description of this application, unless otherwise specified, the terms "install," "mount," "connect," and "connect" should be understood in a broad sense, and may mean, for example, fixedly connected, detachably connected, or integrally connected, mechanically connected, electrically connected, directly connected, or indirectly connected via an intermediate medium, or the interiors of two elements may be in communication with each other. Those skilled in the art will be able to understand the specific meanings of the above terms in this application depending on the specific case.

[0032] In related art, multiple EELs are typically used to form a high-power line beam device (several kilowatts), which then emits multiple lasers to form a bright line beam, cross beam, or planar beam, thereby achieving illumination, detection, and communication purposes. However, because the spectral shift coefficient of EELs is relatively large with temperature changes, large temperature differences in the operating environment can cause the spectral position collected by the device to shift, further affecting the accuracy of detection and communication. Furthermore, EELs suffer from severe power attenuation over a wide temperature range, even reaching 50% power attenuation. Furthermore, EELs typically only have a few light-emitting points that achieve high peak power, and the failure of some of the light-emitting points on the EEL can result in significant performance attenuation. Therefore, when the operating environment experiences a large temperature change range, the solutions in related art suffer from low reliability and significant power attenuation.

[0033] In addition, conventional VCSEL chips are generally rectangular chips, and the width and length of the light-emitting region of such chips are equal and generally large. As a result, the beam parameter product (BPP) of such VCSEL chips is large, making it difficult to realize a line beam light source.

[0034] Therefore, an embodiment of the present application provides a line-beam light source radiation device, the line-beam light source radiation device including a plurality of VCSEL chips and a PCB, the PCB including a driving circuit, each VCSEL chip including a light-emitting area, the light-emitting area including a plurality of light-emitting points, each light-emitting point being used to emit a laser, the light-emitting area of ​​each VCSEL chip including a first edge and a second edge, the VCSEL chips being arranged in parallel along the first edge of the light-emitting area and fixed to the PCB, the first pole and the second pole of each VCSEL chip being respectively connected to the driving circuit, and the driving circuit driving the laser emission of each VCSEL chip, can achieve the effects of improving reliability of the line-beam light source radiation device and reducing power attenuation when the temperature change range of the operating environment is relatively large.

[0035] Although the embodiments of the present application will be described taking the line beam light source emitting device applied to the electronics field as an example, this does not mean that the embodiments of the present application can only be applied to the electronics field to emit a line beam light source.

[0036] The line beam light source radiation device provided in the embodiment of the present application will be explained in detail below.

[0037] 1 is a schematic diagram of the structure of a line beam light source radiation device provided in the present application. Referring to FIG. 1, an embodiment of the present application provides a line beam light source radiation device, which includes a plurality of VCSEL chips 101 and a PCB 102, and the PCB 102 includes a driving circuit.

[0038] Each VCSEL chip 101 includes a light-emitting region, which includes a plurality of light-emitting points, each of which is used to emit a laser beam.

[0039] The light emitting area of ​​each VCSEL chip 101 includes a first edge and a second edge.

[0040] The VCSEL chips 101 are arranged in parallel along a first edge of the light-emitting area and fixed to the PCB 102, and the first pole and the second pole of each VCSEL chip 101 are respectively connected to the driving circuit, which drives the laser emission of each VCSEL chip 101.

[0041] Optionally, the length of the first edge is greater than the second edge, i.e., the light-emitting area of ​​each VCSEL chip 101 is a rectangular area. Thus, the first edge is a long side of the light-emitting area of ​​each VCSEL chip 101, and the second edge is a short side of the light-emitting area of ​​each VCSEL chip 101.

[0042] Optionally, the drive circuit may be a circuit printed on the top surface of the PCB 102, and the drive circuit may supply power to each VCSEL chip 101 to drive each VCSEL chip 101 to power on and operate, and when each VCSEL chip 101 is powered on and operating, each VCSEL chip 101 may emit laser light.

[0043] The driving circuitry can further control the output power of the laser emission of each VCSEL chip 101 and can control parameters such as the time, frequency, and intensity of the laser emission of each VCSEL chip 101 .

[0044] The driving circuit can further be used to connect to a power source, and the power source can output electrical energy to the driving circuit. The driving circuit can be any possible circuit, and the embodiments of the present application are not limited in this regard.

[0045] Each VCSEL chip 101 has a first pole and a second pole, the first pole of which faces the PCB 102, and the second pole of which is located on the same side as each light-emitting region. That is, the first pole of each VCSEL chip 101 is located on the bottom surface of the VCSEL chip 101, and the second pole of each VCSEL chip 101 is located on the top surface of the VCSEL chip 101.

[0046] Generally, if the first pole of the VCSEL chip 101 is the negative pole of the VCSEL chip 101, the second pole of the VCSEL chip 101 is the positive pole of the VCSEL chip 101, and if the first pole of the VCSEL chip 101 is the positive pole of the VCSEL chip 101, the second pole of the VCSEL chip 101 is the negative pole of the VCSEL chip 101.

[0047] Optionally, the length of the second edge of the light-emitting region of each VCSEL chip 101 is not less than 30 micrometers and not more than 100 micrometers. The diameter of each light-emitting point in the light-emitting region is not more than 33 micrometers. The length of the second edge of the light-emitting region of each VCSEL chip 101 may also be set to any other value according to actual needs.

[0048] In addition, the length of the first edge of the light-emitting region of each VCSEL chip 101 can be adjusted according to actual needs. Generally, the length of the first edge only needs to be longer than the length of the second edge. If it is necessary to increase the power of a single VCSEL chip 101, the length of the first edge can be set to be longer.

[0049] The VCSEL chips 101 are arranged in parallel along a first edge of the light-emitting region, that is, along the length of the light-emitting region.

[0050] 2, for example, a driving circuit QD may be further packaged in the PCB 102, and the driving circuit QD may supply power to each VCSEL chip 101. The driving circuit QD may be further connected to a power source to provide an operating voltage to the driving circuit QD through the power source, although the embodiments of the present application are not limited thereto. Each VCSEL chip 101 includes a light-emitting region 1011 and a wire bonding region 1012, and multiple light-emitting points may be distributed in the light-emitting region 1011. The direction x is the direction of the second edge of the light-emitting region 1011 of each VCSEL chip 101, and the direction y is the direction of the first edge of the light-emitting region 1011 of each VCSEL chip 101. That is, the two long sides of the light-emitting region 1011 are the first edges, and the two short sides of the light-emitting region 1011 are the second edges. Specifically, in FIG. 2, the two horizontal edges of the light-emitting region 1011 are the first edges, and the two vertical edges are the second edges. As can be seen from this, the VCSEL chips 101 are arranged in parallel along the first edges of their light-emitting regions 1011 and fixed to the PCB 102, and the VCSEL chips 101 are not in direct contact with each other but are spaced a certain distance apart.

[0051] The wire bonding area 1012 can represent the second pole of the VCSEL chip 101, and generally, the wire bonding area 1012 is used to create a jump wire on the PCB 102, specifically, a jump wire can be created between the wire bonding area 1012 and the driving circuit QD to connect the second pole of the VCSEL chip 101 to the driving circuit QD on the PCB 102.

[0052] It should be noted that when the driving circuit of the PCB 102 supplies power to each VCSEL chip 101, each VCSEL chip 101 can be powered on and operate to emit laser light. The VCSEL chips 101 are arranged in parallel along the first edge of their light-emitting areas, i.e., along the length of their light-emitting areas, so that the light-emitting areas of each VCSEL chip 101 in the line beam light source emitting device can be ensured to form a long light-emitting area in the direction of the first edge. When laser light is emitted by this long light-emitting area, a long light is emitted from the line beam light source emitting device. The laser thus formed forms a line beam, thereby achieving the purpose of the line beam light source emitting device emitting a line beam laser, and since the line beam light source emitting device has a plurality of VCSEL chips 101 arranged in parallel and the divergence angle of the laser emitted from the line beam light source emitting device in the slow axis direction is determined by the divergence angle of each VCSEL chip 101 itself, the size of the first edge of the light-emitting area of ​​each VCSEL chip 101 does not affect the divergence angle of the laser emitted from the line beam light source emitting device in the slow axis direction. Because the size of the first edge of a single VCSEL chip 101 is relatively small, typically 1 millimeter, the VCSEL chips 101 can be arranged in parallel along the first edge of their light-emitting areas, thereby further ensuring that the divergence angle of the laser emitted from the line beam light source emitting device in the slow axis direction is not affected, thereby increasing the power when the line beam light source emitting device emits a laser, and further realizing a high-power line beam light source emitting device. In addition, the power at which the line beam light source light emitting device emits laser can be increased by increasing the number of VCSEL chips 101 arranged in parallel, and the light emitting power of a single VCSEL chip 101 can be increased by increasing the length of the first edge of the light emitting region of each VCSEL chip 101, which can further increase the power at which the line beam light source light emitting device emits laser, but the embodiments of the present application are not limited thereto.

[0053] Furthermore, the VCSEL chip 101 has a very small spectral shift coefficient with temperature change, typically 0.07 nm / °C, and its power attenuation is also relatively low, typically less than 20%, within a wide temperature range, for example, (-40°C to 110°C). Because the line beam light source emitting device provided in the embodiments of the present application employs the VCSEL chip 101, the line beam light source emitting device has a relatively small spectral shift coefficient with temperature change and relatively low power attenuation within a wide temperature range. Thus, when the temperature change range of the operating environment is relatively large, the reliability of the line beam light source emitting device can be improved and power attenuation can be reduced.

[0054] Furthermore, when using the line beam light source emitting device to perform distance detection, depth detection, or laser communication, it is necessary to use one receiving device to receive the laser emitted from each VCSEL chip 101. Since the line beam light source emitting device has relatively low power attenuation over a wide temperature range, the laser emitted from the line beam light source emitting device can be received by a receiving device with relatively low precision, thereby improving the versatility and universality of the line beam light source emitting device.

[0055] The length of the second edge of the light-emitting region of each VCSEL chip 101 is between 30 micrometers and 100 micrometers, and the diameter of each light-emitting point is 33 micrometers or less. In this way, the light-emitting size in the fast axis direction of each VCSEL chip 101 can be reduced, and the beam quality of the laser emitted by each VCSEL chip 101 in the fast axis direction can be improved. Furthermore, since the size of the second edge of each VCSEL chip 101 is reduced, the overall size of each VCSEL chip 101 can be reduced, and the cost of each VCSEL chip 101 can be further reduced.

[0056] In an embodiment of the present application, the line beam light source emitting device includes a plurality of VCSEL chips 101 and a PCB 102, and the PCB 102 includes a driving circuit. Each VCSEL chip 101 includes a light-emitting area, which includes a plurality of light-emitting points, each of which is used to emit a laser. The light-emitting area of ​​each VCSEL chip 101 includes a first edge and a second edge. The VCSEL chips 101 are arranged in parallel along the first edge of the light-emitting area and fixed to the PCB 102, and the first pole and the second pole of each VCSEL chip 101 are respectively connected to the driving circuit, and the driving circuit drives the laser emission of each VCSEL chip 101.

[0057] However, the first pole and the second pole of each VCSEL chip 101 can be connected to the driving circuit, respectively, and each VCSEL chip 101 is connected via the driving circuit. When the first pole and the second pole of each VCSEL chip 101 are connected to the driving circuit, each VCSEL chip 101 can be connected to the driving circuit, and the driving circuit can supply power to each VCSEL chip 101 and control parameters such as the time, frequency, and intensity at which each VCSEL chip 101 emits laser light. Because the bottom surface of the VCSEL chip 101 is fixed to the top surface of the PCB 102, the first pole of each VCSEL chip 101 can be directly connected to the driving circuit on the PCB 102, thereby shortening the current conduction path and reducing the parasitic inductance when each VCSEL chip 101 is operating, and thereby the line beam light source emitting device can obtain a short pulse width.

[0058] When the driving circuit of the PCB 102 supplies power to each VCSEL chip 101, each VCSEL chip 101 can be powered on and operate to emit laser light. The VCSEL chips 101 are arranged in parallel along the first edge of their light-emitting regions, i.e., along the length of their light-emitting regions, ensuring that the light-emitting regions of each VCSEL chip 101 in the line beam light source emitter form a long light-emitting region in the direction of the first edge. When laser light is emitted by this long light-emitting region, the laser light emitted from the line beam light source emitter can form a line beam. By arranging the VCSEL chips 101 in parallel along the first edge 101 of their light-emitting regions, it can be further ensured that the divergence angle in the slow axis direction of the laser light emitted from the line beam light source emitter is not affected. This allows the line beam light source emitter to emit laser light at a higher power, thereby achieving a high-power line beam light source emitter.

[0059] The VCSEL chip 101 has a very small spectral shift coefficient with temperature changes, and its power attenuation is relatively low within a wide temperature range, generally less than 20%. Since the line beam light source emitting device provided in the embodiments of the present application uses the VCSEL chip 101, the line beam light source emitting device has a relatively small spectral shift coefficient with temperature changes, and its power attenuation is also relatively low within a wide temperature range. In this way, when the temperature change range of the operating environment is relatively large, the reliability of the line beam light source emitting device can be improved and the power attenuation can be reduced.

[0060] Furthermore, when using the line beam light source emitting device to perform distance detection, depth detection, or laser communication, it is necessary to use one receiving device to receive the laser emitted from each VCSEL chip 101. Since the line beam light source emitting device has relatively low power attenuation over a wide temperature range, the laser emitted from the line beam light source emitting device can be received by a receiving device with relatively low precision, thereby improving the versatility and universality of the line beam light source emitting device.

[0061] In this way, the reliability of the line beam light source radiation device can be improved and power attenuation can be reduced when the temperature change range of the operating environment is large, and the versatility and universality of the line beam light source radiation device can also be improved.

[0062] In a possible implementation, in addition to FIG. 1, referring to FIG. 3, the line beam light source radiating device further includes a sub-heat sink 103 .

[0063] A sub-heat sink 103 is fixed to the PCB 102, and the VCSEL chips 101 are arranged in parallel along a first edge of the light-emitting area and bonded to the sub-heat sink 103.

[0064] The first pole and / or the second pole of each VCSEL chip 101 is connected to the driving circuit by a sub-heat sink 103 .

[0065] Optionally, the sub-heatsink 103 may be a DPC ceramic plate or a PCB plate, and the sub-heatsink 103 can be used to cool each VCSEL chip 101 and improve the heat dissipation capability of each VCSEL chip 101. The sub-heatsink 103 can also be used to separate the bottom of each VCSEL chip 101 from the top surface of the PCB 102, to prevent temperature changes in each VCSEL chip 101 from affecting the operation of a driving circuit of the PCB 102, or to prevent temperature changes in the driving circuit of the PCB 102 from affecting the operation of each VCSEL chip 101.

[0066] Optionally, the bottom surface of the sub-heatsink 103 may be bonded and fixed to the top surface of the PCB 102 with a welding material such as low-temperature solder or conductive adhesive, thereby fixing the sub-heatsink 103 to the PCB 102. Furthermore, the bottom surface of each VCSEL chip 101 may be bonded and fixed to the top surface of the sub-heatsink 103 along the direction of the first edge of the light-emitting region with a welding material such as low-temperature solder or conductive adhesive, so that the VCSEL chips 101 are arranged in parallel along the first edge of the light-emitting region and fixedly attached to the sub-heatsink 103.

[0067] The first pole and / or the second pole of each VCSEL chip 101 can be connected to the driving circuit by a jumper wire passing through the sub-heatsink 103 or by a conductive member provided on the sub-heatsink 103, but the embodiments of the present application are not limited thereto.

[0068] It should be noted that the lower surface of each VCSEL chip 101 is bonded and fixed to the top surface of the sub-heatsink 103 along the first edge of its light-emitting area, and the bottom surface of the sub-heatsink 103 is fixedly attached to the top surface of the PCB 102, so that each VCSEL chip 101 can be fixed to the PCB 102 along the first edge of its light-emitting area by the sub-heatsink 103, ensuring that the divergence angle in the slow-axis direction of the laser emitted from the line beam light source emitting device is not affected, thereby further increasing the power at which the line beam light source emitting device emits laser, thereby achieving a high power of the line beam light source emitting device. Furthermore, the heat dissipation ability of each VCSEL chip 101 is improved, preventing temperature changes of each VCSEL chip 101 from affecting the operation of the driving circuit of the PCB 102, preventing temperature changes of the driving circuit of the PCB 102 from affecting the operation of each VCSEL chip 101, and further improving the reliability of the line beam light source emitting device.

[0069] In a possible implementation, referring to FIG. 4 in addition to FIG. 3, the first surface of the sub-heatsink 103 has a plurality of pad groups, the sub-heatsink 103 further has a plurality of via groups, and the second surface of the sub-heatsink 103 abuts the top surface of the PCB 102.

[0070] Each pad group includes one first pad 104, each via group includes a first via, and each first via is provided with a first conductive path D1.

[0071] Each of the first vias penetrates the sub-heat sink 103, and the size of each of the first pads 104 is larger than the size of each of the first vias.

[0072] Each first via is used to connect the first pole of each VCSEL chip 101 to a circuit on the PCB 102 .

[0073] The number of each pad group is the same as the number of each VCSEL chip 101, and the number of each via group is the same as the number of each pad group.

[0074] Optionally, the first surface may be a top surface of the sub-heatsink 103 and the second surface may be a bottom surface of the sub-heatsink 103 .

[0075] The first pads 104 may have various shapes, such as star-shaped, triangular, rectangular, circular, etc., and the size of the first pads 104 can be adjusted according to actual needs. In general, the size of the first pads 104 may be slightly larger than the size of each VCSEL chip 101, and the embodiments of the present application are not limited thereto.

[0076] Each first via may have various shapes such as a star shape, a triangle shape, a rectangle shape, a circle shape, etc., and specifically, can be adjusted according to the pin shape of each VCSEL chip 101.

[0077] Optionally, each via group may include only one first via, or may include multiple first vias, and specifically, can be adjusted according to actual needs, and the embodiments of the present application are not limited in this regard.

[0078] When each via group includes only one first via, the center of each first pad overlaps with the center of each first via.

[0079] Each of the first pads 104 can be used to weld each of the VCSEL chips 101 to the sub-heatsink 103. The first pads 104 can also be used to connect the sub-heatsink 103 to a welding point provided on the top surface of the PCB 102 to fix the sub-heatsink 103 to the PCB 102.

[0080] Each first via may be used to insert a pin of each VCSEL chip 101, or may be used to insert a first pole of each VCSEL chip 101. Alternatively, a conducting wire may be placed in each first via to connect the first pole of each VCSEL chip 101 to the drive circuit, and a jump wire may be created from each first via to connect the first pole of each VCSEL chip 101 to the drive circuit.

[0081] Optionally, a first end of the first conductive path D1 is connected to the first pad 104 and the first pole of the VCSEL chip 101, respectively, and a second end of the first conductive path D1 is connected to the top surface of the PCB 102.

[0082] The first conductive path D1 may be a conductive path made of copper foil, copper pillar, copper wire, or any other conductive material disposed in each first via 105.

[0083] In addition, the second end of the first conductive path D1 being connected to the top surface of the PCB 102 may specifically mean that the second end of the first conductive path D1 is connected to a driving circuit printed on the top surface of the PCB 102.

[0084] FIG. 5 is a schematic diagram of the structure of the VCSEL chip 101, sub-heatsink 103, and PCB 102 specifically provided in an embodiment of the present application. As shown in FIG. 5( a), at this time, each VCSEL chip 101 has not yet been attached to the sub-heatsink 103, and the sub-heatsink 103 is attached to the PCB 102. The sub-heatsink 103 includes a plurality of first pads 104, each of which corresponds to one first via 105, and the first conductive path D1 is attached to the first via 105. When each VCSEL chip 101 is fixed and attached to the sub-heatsink 103 in this manner, a structure such as that shown in FIG. 5( b) can be obtained. Specifically, the first pole and / or pin of each VCSEL chip 101 is connected to the first conductive path D1 in each first via 105, and then a welding material such as low-temperature solder or conductive adhesive is injected into each first via 105, or the pin or welding point of each VCSEL chip 101 is welded to each first pad 104 with a welding material such as low-temperature solder or conductive adhesive, thereby bonding and fixing each VCSEL chip 101 to the sub-heatsink 103.

[0085] The first conductive path D1 is made of a conductive material, and a first end of the first conductive path D1 is connected to the first pad 104 and the first pole of the VCSEL chip 101, and a second end of the first conductive path D1 is connected to the driving circuit on the top surface of the PCB 102. Because the first conductive path D1 and the first pad 104 are both conductive, the first conductive path D1 can connect the first pole of the VCSEL chip 101 to the driving circuit. Because the first conductive path D1 is located in each of the first vias 105, the first pole of the VCSEL chip 101 can be connected to the driving circuit directly through the sub-heatsink 103, thereby shortening the current conduction path and reducing the parasitic inductance of each VCSEL chip 101 when it is operating. This enables the line beam light source radiating device to obtain a short pulse width and further reduces the power attenuation of the line beam light source radiating device when the temperature of the operating environment changes significantly.

[0086] In a possible implementation, referring to FIG. 6, each pad group further includes at least one second pad 106, each via group further includes at least one second via, and a second conductive path D2 is provided within each second via.

[0087] Each of the second pads 106 is located on at least one side of the first pad 104 , and each of the second pads 106 is not connected to each of the first pads 104 .

[0088] Each second via penetrates the sub-heat sink 103, the size of each second pad 106 is larger than the size of each second via, and each second via is used to connect the second pole of each VCSEL chip 101 to a circuit on the PCB 102.

[0089] The second pad 106 may have various shapes such as star-shaped, triangular, rectangular, circular, etc., the size of the second pad 106 can be adjusted according to actual needs, and each second via may also have various shapes such as star-shaped, triangular, rectangular, circular, etc., and the embodiments of the present application are not limited thereto.

[0090] Optionally, each via group may include only one second via, or may include multiple second vias, and specifically, can be adjusted according to actual needs, and the embodiments of the present application are not limited in this regard.

[0091] When each via group includes one second via, the center of each second pad 106 overlaps with the center of each first via.

[0092] Each second pad 106 can be connected to a welding point provided on the top surface of the PCB 102 and used to fix the sub-heatsink 103 onto the PCB 102; having more welding points between the sub-heatsink 103 and the PCB 102 can further increase the maximum tension or thrust that can be withstood between the sub-heatsink 103 and the PCB 102, thereby ensuring the stability of the sub-heatsink 103 fixed onto the PCB 102.

[0093] In addition, a conductive wire can be placed in each second via to connect the second pole of each VCSEL chip 101 to the drive circuit, and a jump wire can be created from each second via to connect the second pole of each VCSEL chip 101 to the drive circuit.

[0094] Optionally, a first end of the second conductive path D2 is connected to the second pad 106 and the second pole of the VCSEL chip 101, respectively, and a second end of the second conductive path D2 is connected to the top surface of the PCB 102.

[0095] The second conductive path D2 may be a conductive path made of copper foil, copper pillar, copper wire, or any other conductive material provided in each second via.

[0096] Specifically, the second end of the second conductive path D2 being connected to the top surface of the PCB 102 may mean that the second end of the second conductive path D2 is connected to a driving circuit printed on the top surface of the PCB 102.

[0097] As shown in FIG. 6 , the first end of the second conductive path D2 is connected to the second pad 106 and the second pole of the VCSEL chip 101, respectively. Specifically, this means that a conductive wire L is connected from the second pole of the VCSEL chip 101 to the top surface of the VCSEL chip 101 and the second pad 106 in the manner of creating a jumper wire, and both the second conductive path D2 and the second pad 106 are conductive. In this way, the interconnection between the first end of the second conductive path D2, the second pad 106, and the second pole of the VCSEL chip 101 is realized.

[0098] For example, as shown in FIG. 7( a), each second pad 106 is located on one side of a first pad 104, and the number of the second pads 106 is the same as the number of the first pads 104. Each second pad 106 further includes two second vias 107, and the second conductive path D2 may be mounted in the second vias 107. As can be seen from FIG. 7( a), a conductive wire L is provided between the top surface of each VCSEL chip 101 and the second vias 107, i.e., a conductive wire L is provided between the second pole of each VCSEL chip 101 and the second vias 107, so as to connect the second pole of each VCSEL chip 101 to the corresponding driving circuit.

[0099] For example, as shown in FIG. 7(b), each second pad 106 is located on both sides of the first pad 104, and the number of second pads 106 on each side is the same as the number of first pads 104. Each second pad 106 further includes a second via 107, and the second conductive path D2 may be mounted in the second via 107. As can be seen from FIG. 7(b), a conductive wire L can be provided between the second pole of each VCSEL chip 101 and the second via 107 to connect the second pole of each VCSEL chip 101 to the corresponding driving circuit.

[0100] The second conductive path D2 is made of a conductive material, and a first end of the second conductive path D2 is connected to the second pad 106 and the first pole of the VCSEL chip 101, respectively, and a second end of the second conductive path D2 is connected to the driving circuit on the top surface of the PCB 102. Since the second conductive path D2 and the first pad 106 are both conductive, the second conductive path D2 can thus connect the second pole of the VCSEL chip 101 to the driving circuit. Because the lower surface of each VCSEL chip 101 is fixed to the uppermost surface of the sub-heatsink 103, it is necessary to create a jump wire between the second pole of each VCSEL chip 101 and the driving circuit, bypassing the sub-heatsink 103, to connect the second pole of each VCSEL chip 101 and the driving circuit. However, the second conductive path D2 is provided in each second via 107, so that a very short conductive wire L can be connected from the second pole of the VCSEL chip 101 to the second pad 106 and / or the second conductive path D2, directly penetrating the sub-heatsink 103, to connect the second pole of the VCSEL chip 101 and the driving circuit. In this way, the current conduction path can be shortened and the parasitic inductance when each VCSEL chip 101 is operating can be reduced, thereby enabling the line beam light source radiation device to obtain a short pulse width. In a possible implementation, the sub-heat sink 103 is fixed onto the PCB 102 by welding points provided on the top surface of the PCB 102 .

[0101] Optionally, multiple welding points can be provided on the top surface of the PCB 102 to weld the bottom surface of the sub-heatsink 103 to the top surface of the PCB 102, thus increasing the maximum tension or thrust that can be withstood between the sub-heatsink 103 and the PCB 102, thereby ensuring the stability of the sub-heatsink 103 fixed on the PCB 102.

[0102] In a possible implementation, a welding point corresponding to each of the first pads 104 and each of the second pads 106 is provided on the top surface of the PCB 102, and each welding point is connected to a driving circuit.

[0103] It should be noted that the welding points on the top surface of the PCB 102 can be connected to the driving circuit, and each welding point corresponds to the first pad 104 and the second pad 106. Thus, when the sub-heatsink 103 is fixed to the PCB 102 by each welding point, each welding point is welded to the corresponding first pad 104 and second pad 106. The first pad 104 and the second pad 106 correspond to the first conductive path D1 and the second conductive path D2, respectively. In this way, the first pole of each VCSEL chip 101 can be directly electrically connected to the welding point on the PCB board through each first pad 104 and each second pad 106, that is, the first pole of each VCSEL chip 101 can be directly electrically connected to the welding point on the PCB board through the first conductive path D1 and the second conductive path D2, thus shortening the current conduction path and reducing the parasitic inductance when each VCSEL chip 101 is operating, thereby obtaining a short pulse width.

[0104] In a possible implementation, referring to FIG. 8, the apparatus further comprises an optical shaping module 108 .

[0105] An optical shaping module 108 is provided on one side of the light-emitting area of ​​each VCSEL chip 101 and is used to shape the laser emitted from each VCSEL chip 101 in a first direction and / or a second direction.

[0106] Optionally, the first direction and the second direction are perpendicular to each other. Generally, the first direction may be a slow-axis direction of the optical shaping module 108, and the second direction may be a fast-axis direction of the optical shaping module 108, and specifically, the slow-axis direction of the optical shaping module 108 is defined as being parallel to a direction of a first edge of the light-emitting area of ​​each VCSEL chip 101, and the fast-axis direction of the optical shaping module 108 is defined as being parallel to a direction of a second edge of the light-emitting area of ​​each VCSEL chip 101.

[0107] Furthermore, when the direction of the second edge of the light-emitting region of each VCSEL chip 101 is perpendicular to a horizontal plane, the first direction may be horizontal and the second direction may be vertical, and the embodiments of the present application are not limited thereto.

[0108] Optionally, shaping the laser emitted from each VCSEL chip 101 specifically means collimating and / or homogenizing the laser emitted from each VCSEL chip 101. The embodiments of the present application are not limited thereto.

[0109] Optionally, the optical shaping module 108 is specifically used to collimate the laser emitted from the light-emitting region of each VCSEL chip 101 in the first direction and homogenize the laser emitted from the light-emitting region of each VCSEL chip 101 in the second direction, so as to form the laser emitted by the optical shaping module 108 into a line beam.

[0110] It is noted that the optical shaping module 108 is disposed on one side of the light-emitting area of ​​each VCSEL chip 101, so that the laser emitted from each VCSEL chip 101 can enter the optical shaping module 108, and pass through the optical shaping module 108 to collimate the laser emitted from the light-emitting area of ​​each VCSEL chip 101 in the first direction and homogenize the laser emitted from the light-emitting area of ​​each VCSEL chip 101 in the second direction, so that the lasers emitted by the optical shaping module 108 can be kept parallel to each other, and the light intensity of each part of the emitted line beam can be made similar, that is, the line beam light source emitting device can make the laser emitted by the optical shaping module 108 form a more effective line beam.

[0111] In addition, since the length of the second edge of the light-emitting region of each VCSEL chip 101 is between 30 micrometers and 100 micrometers, and the diameter of each light-emitting point is 33 micrometers or less, when the laser is incident on the optical shaping module 108, if the optical shaping module 108 shapes the laser in the fast axis direction, i.e., the second direction, a narrower line beam can be obtained, and the quality of the line beam emitted from the line beam light source emission device can be further improved.

[0112] In a possible implementation, the optical shaping module 108 may include a collimating lens group and a homogenizing lens.

[0113] The collimating lens group and the homogeneous lens can both be disposed on one side of the light-emitting area of ​​each VCSEL chip 101 .

[0114] The distance between the collimating lens group and the light-emitting region of each VCSEL chip 101 may be smaller than the distance between the homogeneous lens and the light-emitting region of each VCSEL chip 101 .

[0115] Optionally, the collimating lens group is used to make the divergence angle of the laser emitted from each light-emitting point in the first direction 0.3° or less.

[0116] The homogenizing lens is used to achieve homogenization of the laser beam emitted from each light emitting point in the second direction over an angle of 10° to 30°.

[0117] As an example, collimation and homogenization of the laser beam emitted from each VCSEL chip 101 in the first direction and the second direction can be achieved by the following four methods.

[0118] In the first method, referring to FIG. 9, the collimating lens group may include one collimating lens 1081, and the homogenizing lens may be a homogenizing lens 1082. As shown in FIG. 9, this solution uses one collimating lens 1081 in the fast axis direction to adjust the divergence angle of the laser emitted from each VCSEL chip 101 to <0.3°, and uses one homogenizing lens 1082 in the slow axis direction to achieve a homogenization effect where the laser emitted from the homogenizing lens 1082 has an angle of 10° to 30°. Specifically, the laser emitted from each VCSEL chip 101 first enters a collimating lens 1081, and then the laser that enters a homogenizing lens 1082 is a light beam that adjusts the divergence angle of the laser emitted from each VCSEL chip 101 to less than 0.3° by the collimating lens 1081, and then the homogenizing lens 1082 achieves a homogenization effect of an angle of 10° to 30°, thereby ensuring that the finally emitted laser is a line beam.

[0119] The minimum homogenization angle that the homogenizing lens 1082 achieves in the slow axis direction is the divergence angle of each VCSEL chip 101, and the maximum homogenization angle can be determined by the numerical aperture of the homogenizing lens 1082. This solution is relatively simple and requires fewer lenses, reducing the cost of the line beam light source radiation device.

[0120] 10 , the collimating lens group may include two collimating lenses 1081, and the homogenous lens may be a homogenous lens 1082. As shown in FIG. 10 , this solution uses two collimating lenses 1081 in the fast axis direction to adjust the divergence angle of the laser beam emitted from each VCSEL chip 101 to less than 0.3°. Because two collimating lenses 1081 are used, the laser beam emitted from each VCSEL chip 101 first needs to be incident on two collimating lenses 1081 once, and then incident on the homogenous lens 1082 to achieve a homogenization effect, ensuring that the final emitted laser beam is a line beam. In this way, not only can a better collimating effect be achieved, but the further focusing of the two collimating lenses 1081 can also achieve an optical path compression effect. That is, when the beam is collimated by the two collimating lenses 1081, a better collimating effect and optical path compression effect can be achieved within a shorter focal length.

[0121] In a third method, referring to FIG. 11 , the collimating lens group may include one collimating lens 1083, and the homogenizing lens may be a homogenizing lens 1084. The collimating lens 1083 may be used solely for the purpose of optical path compression, and the homogenizing lens 1084 may be a lens having an aspheric surface in the direction of the linear generatrix of the microcylinder. As shown in FIG. 11 , when the laser beam emitted from each VCSEL chip 101 enters the collimating lens 1083, the collimating lens 1083 only performs the function of optical path compression, while the homogenizing lens 1084 can simultaneously perform the functions of collimating the laser beam in the fast axis direction and homogenizing the laser beam in the slow axis direction, thereby ensuring that the final emitted laser beam is a line beam. In this manner, the effects of collimation, optical path compression, and homogenization can be simultaneously achieved.

[0122] In a fourth manner, referring to FIG. 12 , the optical shaping module 108 may further include a reflecting mirror 1085, the collimating lens group may include one collimating lens 1081, and the homogenous lens may be a homogenous lens 1082. As shown in FIG. 12 , in this solution, the plane on which the optical shaping module 108 is located may be perpendicular to the plane on which each VCSEL chip 101 is located. Specifically, the reflecting mirror 1085 first changes the optical path of the laser beam emitted from each VCSEL chip 101, and the laser beam emitted from each VCSEL chip 101 is reflected by the collimating lens 1081. The laser beam incident on the homogenous lens 1082 is then adjusted by the collimating lens 1081 to a divergence angle of less than 0.3°. The homogenizing effect of the homogenizing lens 1082 is then achieved at an angle of 10° to 30°, thereby ensuring that the final emitted laser beam is a line beam. In this way, the reflecting mirror 1085 can change the optical path of the laser, shortening the distance the laser travels in the process of collimating and homogenizing the laser, thereby reducing the volume of the optical shaping module 108 and further reducing the volume of the line beam light source radiation device.

[0123] In a possible embodiment, the first poles of each VCSEL chip 101 are all connected to a first common point on the drive circuit, and the second poles of each VCSEL chip 101 are all connected to a second common point on the drive circuit.

[0124] In this case, each VCSEL chip 101 can be connected to the drive circuit, and the VCSEL chips 101 are connected in parallel.

[0125] It should be noted that by connecting each VCSEL chip 101 in parallel, the series resistance and parasitic inductance in the circuit formed by each VCSEL chip 101 can be reduced, thereby reducing the pulse width and rise time in the line beam light source radiation device.

[0126] In a possible embodiment, the first pole of the first VCSEL chip 101 and the second pole of the second VCSEL chip 101 are connected to a third common point on the drive circuit, connecting the first VCSEL chip 101 and the second VCSEL chip 101 in series.

[0127] Optionally, the first VCSEL chip 101 and the second VCSEL chip 101 are two VCSEL chips 101 arranged adjacent to each other among the VCSEL chips 101.

[0128] In this case as well, each VCSEL chip 101 can be connected to the corresponding drive circuit, and the VCSEL chips 101 are connected in series with each other.

[0129] Furthermore, when the line beam light source radiation device provided in the embodiment of the present application is used to realize short pulse laser detection, such as depth detection and distance detection, the required pulse width is small, and thus a method of connecting each VCSEL chip 101 in parallel can be selected.

[0130] FIG. 13 is a schematic diagram of the structure of a line beam light source emitting device provided in an embodiment of the present application. Referring to FIG. 13, the line beam light source emitting device includes a housing 109 and a line beam light source emitting device in each method embodiment.

[0131] Optionally, a housing 109 is used to secure the line beam source emitter.

[0132] Optionally, the structure of the housing 109 may be any structure capable of fixing the line beam light source emitting device, and the structure of the housing 109 shown in FIG. 13 is only an example and does not represent that the housing 109 in the line beam light source emitting device provided in the embodiments of the present application can only have the structure of the housing 109 shown in FIG. 12.

[0133] 14 is a flowchart of a method for packaging a line beam light source radiation device provided in an embodiment of the present application. Referring to FIG. 14, the method includes the following steps 2001 to 2005.

[0134] In step 2001, the bottom surface of each VCSEL chip is sequentially bonded to a first pad of a sub-heat sink along a first edge of the light-emitting area.

[0135] Optionally, the first pole of each VCSEL chip is located on a bottom surface of each VCSEL chip, such that when the bottom surface of each VCSEL chip is sequentially coupled to a first pad of the sub-heatsink along a first edge of the light-emitting area, the first pole of each VCSEL chip contacts the first pad.

[0136] The sub-heat sink is further provided with a first conductive path in the first via, and the first conductive path is connected to the first pad, so that the first pole of each VCSEL chip is also connected to the first conductive path.

[0137] As an example, the bottom surface of each VCSEL chip may be sequentially bonded to the first pad of the sub-heat sink according to a preset position.

[0138] For example, the preset positions may be positions that ensure that after bonding each VCSEL chip to each first pad, the position error between each VCSEL chip is equal to or less than a position error threshold, and the angular error between each VCSEL chip is equal to or less than an angular error threshold.

[0139] The position error may be an error in the spacing between the VCSEL chips along three axes, X, Y, and Z, which are perpendicular to each other. In general, the plane on which the X and Y axes lie may be parallel to the top and / or bottom surfaces of the VCSEL chips, and the Z axis may be perpendicular to the plane on which the X and Y axes lie, i.e., the Z axis may be perpendicular to the top and / or bottom surfaces of the VCSEL chips. However, the embodiments of the present application are not limited thereto.

[0140] The angle error may be an error between the pitch angle (Pitch) of each VCSEL chip rotating around the X axis, the yaw angle (Yaw) of each VCSEL chip rotating around the Y axis, and the roll angle (Roll) of each VCSEL chip rotating around the Z axis. Generally, three plane angles formed by the three axes X, Y, and Z can be used as reference angles, but the embodiments of the present application are not limited thereto.

[0141] The position error threshold and the angle error threshold may be set by a person skilled in the art according to actual needs, and the embodiment of the present application is not limited thereto.

[0142] It should be noted that, in general, the position error threshold and the angle error threshold can be made as small as possible, so that when each VCSEL chip is bonded to each first pad, the position error between each VCSEL chip in the three axes of X, Y, and Z is small, and the errors between the pitch angle, yaw angle, and roll angle of each VCSEL chip relative to the three axes of X, Y, and Z are small, thereby improving the quality of the line beam emitted from the line beam light source emission device.

[0143] Furthermore, since the bottom surface of each VCSEL chip is sequentially bonded to the first pad of the sub-heatsink along the first edge of the light-emitting area, i.e., arranged in parallel along the length direction of the light-emitting area, it is possible to ensure that the light-emitting area of ​​each VCSEL chip in the line beam light source radiation device forms a long light-emitting area in the direction of the first edge. When laser is emitted through this long light-emitting area, the laser emitted from the line beam light source radiation device can form a line beam, and the purpose of the line beam light source radiation device to emit a line beam laser can be realized. Furthermore, since multiple VCSEL chips are arranged in parallel in the line beam light source radiation device, the power when the line beam light source radiation device emits laser can be increased, and thus high power can be achieved for the line beam light source radiation device.

[0144] In step 2002, the wire bonding area on the top surface of each VCSEL chip is connected to the second pad of the sub-heat sink by making a jumper wire.

[0145] Optionally, the wire bonding area 1012 can represent the second pole of the VCSEL chip 101, and thus the wire bonding area on the top surface of each VCSEL chip is connected to the second pad of the sub-heatsink in a manner that creates a jumper wire, i.e., connecting the second pole of the VCSEL chip 101 to the second pad of the sub-heatsink.

[0146] The sub-heatsink is further provided with a second conductive path in a second via, the second conductive path being connected to the second pad, and the second pole of each VCSEL chip is also connected to the second conductive path.

[0147] It should be noted that each second conductive path penetrates the sub-heatsink through a second via and is connected to the second pad. Thus, by connecting the wire bonding area on the top surface of each VCSEL chip to the second pad on the sub-heatsink by creating a jumper wire, the second electrode of each VCSEL chip can be connected to the driving circuit directly through the sub-heatsink. This shortens the current conduction path and reduces the parasitic inductance when each VCSEL chip 101 is operating, thereby enabling the line beam light source radiation device to obtain a short pulse width.

[0148] In step 2003, the bottom surface of the sub-heat sink on which each VCSEL chip is packaged is bonded to the top surface of the PCB to form a light source module.

[0149] Optionally, the light source module includes each VCSEL chip, a PCB, and a sub-heat sink.

[0150] When the bottom surface of the sub-heatsink on which each VCSEL chip is packaged is bonded to the top surface of the PCB, the second end of the first conductive path in the sub-heatsink is connected to the top surface of the PCB, i.e., the second end of the first conductive path is connected to the driving circuit printed on the top surface of the PCB, and the second end of the first conductive path in the sub-heatsink is connected to the top surface of the PCB, i.e., the second end of the first conductive path is connected to the driving circuit printed on the top surface of the PCB.

[0151] The first pole of each VCSEL chip is also connected to the first conductive path, and the second pole of the VCSEL chip 101 is connected to the second pad of the sub-heatsink, thus achieving the purpose of connecting the first pole of each VCSEL chip and the second pole of each VCSEL chip to the driving circuit printed on the top surface of the PCB.

[0152] It should be noted that, because the first conductive paths are located in the first vias and the first vias pass through the sub-heatsink, when the bottom surface of the sub-heatsink on which the VCSEL chips are packaged is coupled to the top surface of the PCB, the second surface of the sub-heatsink abuts against the top surface of the PCB, and thus the first pole of each VCSEL chip can be connected to the driving circuit through the first conductive paths, thereby shortening the current conduction path and reducing the parasitic inductance when each VCSEL chip is operating, so that the line beam light source radiator can obtain a short pulse width, and further achieving the effect of reducing the power attenuation of the line beam light source radiator when the temperature change range of the operating environment is large.

[0153] In step 2004, based on the position and optical parameters of the packaged light source module, adjust the position and angle of the collimating lens group in the optical shaping module, and fix and mount the collimating lens group according to the adjusted position and angle.

[0154] Optionally, the optical parameters may include the divergence angle of the laser emitted from each VCSEL chip and any other parameters required when adjusting the position and angle of the collimating lens group in the optical shaping module.

[0155] Typically, the optical shaping module is located on one side of the light-emitting area of ​​each VCSEL chip.

[0156] Specifically, adjusting the position and angle of the collimating lens group may refer to adjusting the distance between the collimating lens group and the emission area of ​​each VCSEL chip, and the included angle between the collimating lens group and the emission area of ​​each VCSEL chip, to adjust an appropriate focal length, and further ensuring that the collimating lens group adjusts the divergence angle of the laser emitted from each VCSEL chip 101 to <0.3° at the adjusted position and angle.

[0157] In this way, since the optical shaping module is arranged on one side of the light-emitting area of ​​each VCSEL chip, the laser emitted from each VCSEL chip can enter the collimating lens group in the optical shaping module, and pass through the collimating lens group in the optical shaping module to collimate the laser emitted from the light-emitting area of ​​each VCSEL chip in the first direction, thus improving the quality of the line beam emitted by the line beam light source emitting device through the optical shaping module.

[0158] In step 2005, a homogeneous lens in the optical shaping module is fixedly attached to the side of the collimating lens group away from each VCSEL chip to obtain a packaged line beam light source radiation device.

[0159] Optionally, the position where the homogenizing lens is fixed may be determined according to the distance between the collimating lens group and the homogenizing lens. Generally, the position where the homogenizing lens is fixed may be a position where the homogenizing effect of the laser incident on the homogenizing lens 1082 is realized at an angle of 10° to 30°, or a position where the finally emitted laser becomes a line beam.

[0160] In addition, since the homogenous lens in the optical shaping module is fixedly attached to the side of the collimating lens group away from each VCSEL chip, the collimated laser emitted from the collimating lens group can be incident on the homogenous lens in the optical shaping module, and pass through the homogenous lens in the optical shaping module to homogenize the laser emitted from the light-emitting region of each VCSEL chip in the second direction, thus keeping the lasers emitted from the optical shaping module parallel to each other and making the light intensity of each part of the emitted line beam similar, thus improving the quality of the line beam emitted by the line beam light source emitting device through the optical shaping module.

[0161] The packaging method of the above line beam light source emitting device is similar in its implementation principle and technical effect to the line beam light source emitting device provided in the above embodiment, so the description is omitted here.

[0162] The above is merely a specific embodiment of the present application, and does not limit the scope of protection of the present application. Any modifications or substitutions that can be easily thought up by a person skilled in the art within the technical scope disclosed in the present application are included in the scope of protection of the present application. Therefore, the scope of protection of the present application should be based on the scope of protection of the claims.

[0163] The above is only a preferred embodiment of the present application, and does not limit the present application, and various modifications and variations are possible for those skilled in the art. Any modifications, equivalent replacements, improvements, etc. made within the spirit and principle of the present application should be included within the protection scope of the present application. [Explanation of symbols]

[0164] 101: VCSEL chip, 102: PCB, 103: sub-heat sink, 104: first pad, 105: first via, 106: second pad, 107: second via, 108: optical shaping module, 1081: collimating lens, 1082: homogeneous lens, 1083: collimating lens, 1084: homogeneous lens, 1085: reflector, 109: housing, D1: first conductive path, D2: second conductive path.

Claims

1. 1. A line beam light source emitting device, comprising: the device includes a plurality of vertical cavity surface emitting laser chips and a circuit board, the circuit board including a driving circuit; Each of the vertical cavity surface emitting laser chips includes a light emitting region, the light emitting region includes a plurality of light emitting points, and each of the light emitting points is used to emit a laser beam; an emission area of ​​each of the vertical cavity surface emitting laser chips includes a first edge and a second edge, and a length of the first edge is greater than a length of the second edge; the vertical cavity surface emitting laser chips are arranged in parallel along a first edge of the light emitting region and fixed to the circuit board, a first pole and a second pole of each of the vertical cavity surface emitting laser chips are respectively connected to the drive circuit, and the drive circuit drives laser emission of each of the vertical cavity surface emitting laser chips; A line beam light source radiation device characterized by:

2. The light emitting area of ​​each of the vertical cavity surface emitting laser chips is a rectangular area; 2. The line beam source radiation device according to claim 1.

3. the apparatus further includes a sub-heat sink; the sub-heat sink is fixed to the circuit board, and the vertical cavity surface emitting laser chips are arranged in parallel along a first edge of the light emitting region and coupled to the sub-heat sink; the first pole and / or the second pole of each of the vertical cavity surface emitting laser chips is connected to the drive circuit by the sub-heat sink; 2. The line beam source radiation device according to claim 1.

4. a first surface of the sub-heatsink having a plurality of pads, the sub-heatsink further having a plurality of vias, a second surface of the sub-heatsink abutting against an upper surface of the circuit board; Each of the pad groups includes one first pad, each of the via groups includes a first via, and each of the first vias is provided with a first conductive path; each of the first vias penetrates the sub-heat sink, a size of each of the first pads is larger than a size of each of the first vias, and each of the first vias is used to connect a first pole of each of the vertical cavity surface emitting laser chips to a circuit on the circuit board; 4. The line beam source radiation device according to claim 3.

5. Each of the pad groups further includes at least one second pad, and each of the via groups further includes at least one second via, with a second conductive path provided within each of the second vias; Each of the second pads is located on at least one side of each of the first pads, and each of the second pads is not connected to each of the first pads; each of the second vias penetrates the sub-heat sink, a size of each of the second pads is larger than a size of each of the second vias, and each of the second vias is used to connect a second pole of each of the vertical cavity surface emitting laser chips to a circuit on the circuit board; 5. The line beam source radiation device according to claim 4.

6. the apparatus further includes an optical shaping module; the optical shaping module is provided on one side of the light-emitting area of ​​each of the vertical cavity surface-emitting laser chips, and is used to collimate and / or homogenize the laser emitted from each of the vertical cavity surface-emitting laser chips in a first direction and / or a second direction, and the first direction and the second direction are perpendicular to each other; 2. The line beam source radiation device according to claim 1.

7. a first pole of each of the vertical cavity surface emitting laser chips is connected to a first common point on the drive circuit, and a second pole of each of the vertical cavity surface emitting laser chips is connected to a second common point on the drive circuit; 7. The line beam light source radiation device according to claim 1.

8. a first pole of the first vertical cavity surface-emitting laser chip and a second pole of the second vertical cavity surface-emitting laser chip are connected to a third common point on the drive circuit, so that the first vertical cavity surface-emitting laser chip and the second vertical cavity surface-emitting laser chip are connected in series, and the first vertical cavity surface-emitting laser chip and the second vertical cavity surface-emitting laser chip are two vertical cavity surface-emitting laser chips arranged adjacent to each other among the vertical cavity surface-emitting laser chips; 7. The line beam light source radiation device according to claim 1.

9. the length of the second edge of the light-emitting region of each of the vertical-cavity surface-emitting laser chips is not less than 30 micrometers and not more than 100 micrometers; 7. The line beam light source radiation device according to claim 1.

10. 1. A line beam source emitting device, comprising: The equipment includes a housing and a line beam light source emitting device according to any one of claims 1 to 9, the housing being used to fix the line beam light source emitting device.

1. A line beam light source radiation device comprising:

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