Gas distribution device for improving mixing uniformity

Abstract

The gas distribution apparatus described herein includes a mixing plate adjacent to a backplate of the showerhead. The mixing plate has a rear surface and a front surface that define a thickness of the mixing plate. The mixing plate has a mixing channel with upper and lower portions that define a length of the mixing channel, and at least two gas inlets fluidly connected to the upper portion of the mixing channel. The gas distribution apparatus also includes a mixer disposed in the thickness of the mixing plate in the upper portion of the mixing channel. The mixer has a top plate, a mixer stem extending from the top plate, and a plurality of blades positioned along the length of the mixer stem. Also provided is a processing chamber including the gas distribution apparatus described herein.

Description

[Technical Field]

[0001]

[0001] The present disclosure relates generally to an apparatus for introducing gases into and out of a processing chamber. More specifically, embodiments of the present disclosure are directed to an apparatus for introducing an improved, uniformly mixed gas into a processing chamber. [Background technology]

[0002]

[0002] In the fields of semiconductor processing, flat panel display processing, and other electronic device processing, vapor deposition processes have played an important role in depositing materials onto substrates (also called wafers). As electronic device geometries continue to shrink and device densities increase, feature sizes and aspect ratios are becoming more stringent, e.g., feature sizes of about 0.07 μm and aspect ratios of 10 or greater.

[0003] During atomic layer deposition (ALD) processing, reactant gases are introduced into a processing chamber containing a substrate. Typically, a region of the substrate is contacted with a first reactant, which adsorbs to the substrate surface. The substrate is then contacted with a second reactant, which reacts with the first reactant to form a deposited material. To ensure that reaction occurs only at the substrate surface, a purge gas may be introduced between each delivery of reactant gas.

[0004]

[0004] In some processes, multiple gases are used for a variety of reasons. For example, in a chemical vapor deposition (CVD) process, two reactive gases may be mixed in the processing region of a processing chamber while a third gas is added as a diluent or catalyst. Furthermore, in some processes, additional gases may be introduced after processing to treat the deposited film or to clean the processing chamber.

[0005]

[0005] When multiple gases are introduced into a processing chamber through a single injection point (e.g., through a showerhead), gas mixing uniformity behind the injection point is important to ensure uniform gas distribution at the substrate surface. In many showerhead designs, gases injected through the showerhead are non-uniformly mixed, resulting in non-uniform deposition gas distribution at the substrate surface and non-uniform deposition processes.

[0006]

[0006] Therefore, there is a need in the art for an apparatus for introducing an improved, uniformly mixed gas into a processing chamber. Summary of the Invention

[0007] One or more embodiments of the present disclosure are directed to a gas distribution apparatus. The gas distribution apparatus includes a mixing plate adjacent to a backplate of a showerhead. The mixing plate has a rear surface and a front surface that define a thickness of the mixing plate, and a mixing channel including an upper portion and a lower portion that define a length of the mixing channel. The upper portion has a first inner diameter, and the lower portion has a second inner diameter that is unequal to the first inner diameter. The mixing plate further includes at least two gas inlets fluidly connected to the upper portion of the mixing channel. The gas distribution apparatus also includes a mixer disposed in the thickness of the mixing plate in the upper portion of the mixing channel. The mixer has a top plate and a mixer stem extending from the top plate. The mixer stem includes a top and a bottom that define a length of the mixer stem. The top of the mixer stem abuts the top plate and extends into the upper portion of the mixing channel. The mixer includes a plurality of blades positioned along the length of the mixer stem.

[0008]

[0008] An additional embodiment of the present disclosure is directed to a processing chamber. The processing chamber includes a chamber body having a top wall, a bottom wall, and at least one sidewall that define a processing space. The processing chamber also includes a mixing plate adjacent to the backplate of the showerhead. The mixing plate has a rear surface and a front surface that define a thickness of the mixing plate, and a mixing channel including an upper portion and a lower portion that define a length of the mixing channel. The upper portion has a first inner diameter and the lower portion has a second inner diameter unequal to the first inner diameter. The mixing plate further includes at least two gas inlets fluidly connected to the upper portion of the mixing channel. The processing chamber also includes a mixer disposed in the thickness of the mixing plate in the upper portion of the mixing channel. The mixer has a top plate and a mixer stem extending from the top plate. The mixer stem includes a top and a bottom defining a length of the mixer stem. The top of the mixer stem contacts the top plate and extends into the upper portion of the mixing channel. The mixer includes a plurality of blades positioned along the length of the mixer stem. The processing chamber further includes a substrate support spaced from the front plate of the showerhead.

[0009]

[0009] So that the above-mentioned features of the present disclosure can be understood in detail, a more particular description of the present disclosure, briefly summarized above, can be had by reference to embodiments, some of which are illustrated in the accompanying drawings. It should be noted, however, that the present disclosure may admit of other equally effective embodiments, and therefore the accompanying drawings illustrate only typical embodiments of the disclosure and should not be considered as limiting the scope of the present disclosure. The embodiments described herein are illustrated by way of example and not by way of limitation in the accompanying drawings, in which like reference numerals indicate similar elements. [Brief explanation of the drawings]

[0010] [Figure 1] 1 illustrates a gas distribution apparatus according to one or more embodiments of the present disclosure. [Figure 2]

[0011] 2 illustrates a processing chamber including the gas distribution system shown in FIG. [Figure 3]

[0012] 2 shows an enlarged view of region III of the gas distribution device shown in FIG. 1; [Figure 4]

[0013] 1 illustrates a mixer in accordance with one or more embodiments of the present disclosure. DETAILED DESCRIPTION OF THE INVENTION

[0011]

[0014] Before describing some example embodiments of the present disclosure, it is to be understood that the present disclosure is not limited to the details of construction or process steps set forth in the following description. The present disclosure is capable of other embodiments and of being practiced or carried out in various ways.

[0012]

[0015] The term "about," as used herein, means "approximately" or "almost," and refers to a variation of no more than ±15% of a numerical value in relation to a stated numerical value or range. For example, values ​​that vary by ±14%, ±10%, ±5%, ±2%, or ±1% would meet the definition of about.

[0013]

[0016] As used herein and in the appended claims, the term "substrate" or "wafer" refers to a surface or portion of a surface upon which a process acts. Those skilled in the art will also understand that, unless the context specifically dictates otherwise, a reference to a substrate may refer to only a portion of the substrate. Additionally, when referring to deposition on a substrate, it can refer to both a bare substrate and a substrate with one or more films or features deposited or formed thereon.

[0014]

[0017] As used herein, "substrate" refers to any substrate or material surface formed on a substrate on which film processing occurs during a manufacturing process. For example, substrate surfaces that can be processed include materials such as silicon, silicon oxide, strained silicon, silicon-on-insulator (SOI), carbon-doped silicon oxide, amorphous silicon, doped silicon, germanium, gallium arsenide, glass, sapphire, and any other materials such as metals, metal nitrides, metal alloys, and other conductive materials, depending on the application. Substrates include, but are not limited to, semiconductor wafers. Substrates may also be exposed to pretreatment processes to polish, etch, reduce, oxidize, hydroxylate (or otherwise create or graft target chemical moieties to impart chemical functionality), anneal, and / or bake the substrate surface. In addition to processing directly on the surface of the substrate itself, in this disclosure, any of the disclosed film processing steps may also be performed on an underlying layer formed on the substrate, as disclosed in more detail below, and the term "substrate surface" is intended to include this underlying layer, as the context indicates. Thus, for example, if a film / layer or partial film / layer is deposited on a substrate surface, the exposed surface of the newly deposited film / layer would be the substrate surface. What a given substrate surface comprises will depend on what materials are being deposited as well as the particular chemistry used.

[0015]

[0018] As used herein and in the appended claims, the terms "precursor," "reactant," "reactive gas," and the like are used interchangeably and refer to any gas species capable of reacting with the substrate surface.

[0016]

[0019] As used herein, "atomic layer deposition" or "cyclic deposition" refers to the sequential exposure of two or more reactive compounds to deposit layers of material on a substrate surface. A substrate or portions of a substrate are separately exposed to two or more reactive compounds introduced into a reaction zone of a processing chamber. In a time-domain ALD process, exposure to each reactive compound is separated by a time delay to allow each compound to adhere to and / or react on the substrate surface and then be purged from the processing chamber. These reactive compounds are said to be sequentially exposed to the substrate. In a spatial ALD process, various portions of the substrate surface, or materials on the substrate surface, are simultaneously exposed to two or more reactive compounds such that any given point on the substrate is not substantially simultaneously exposed to multiple reactive compounds. As used herein and in the appended claims, the term "substantially" as used in this context means that, as understood by those skilled in the art, small portions of a substrate may be simultaneously exposed to multiple reactive compounds due to diffusion, and this simultaneous exposure is unintentional.

[0017]

[0020] In one aspect of a time-domain ALD process, a first reactive gas (i.e., a first precursor or compound A) is pulsed into the reaction zone, followed by a first time delay. Then, a second precursor or compound B is pulsed into the reaction zone, followed by a second delay. During each time delay, a purge gas (e.g., argon) is introduced into the process chamber to purge the reaction zone or otherwise remove any residual reactive compound or reaction by-products from the reaction zone. Alternatively, a purge gas may flow continuously throughout the deposition process, with only the purge gas flowing during the time delay between pulses of reactive compound. Reactive compounds are alternately pulsed until a desired film or film thickness is formed on the substrate surface. In either scenario, an ALD process pulsing compound A, purge gas, compound B, and purge gas constitutes one cycle. A cycle can begin with either compound A or compound B and continue with each sequence of the cycle until a film of the desired thickness is obtained.

[0018]

[0021] In a spatial ALD processing embodiment, a first reactive gas and a second reactive gas (e.g., nitrogen gas) are simultaneously supplied to a reaction zone but separated by an inert gas curtain and / or a vacuum curtain, and the substrate is moved relative to the gas supply system so that any given point on the substrate is exposed to both the first reactive gas and the second reactive gas.

[0019]

[0022] Embodiments of the present disclosure are directed to gas distribution apparatuses for use in chemical vapor deposition (CVD) type processes. One or more embodiments of the present disclosure are directed to atomic layer deposition (ALD) processes and apparatus incorporating the gas distribution apparatuses described herein.

[0020]

[0023] Embodiments of the present disclosure provide gas inlets and mixers configured to improve mixing uniformity while minimizing system pressure drop. In some embodiments, uniformity is improved by describing improved inlet configurations. In some embodiments, uniformity is improved by providing a larger mixing space.

[0021]

[0024] In conventional processes, two gases are introduced into a mixer in a gas injector along with a carrier gas (e.g., argon). However, the gases do not mix well, resulting in high non-uniformity. For example, in a conventional injector assembly with three radial inlets evenly spaced around the inlet of the injector, the non-uniformity is high (e.g., up to 40%). In embodiments of the present disclosure, an injector inlet structure is provided that improves the non-uniformity of the gas mixture before introducing the mixture into a processing region above the substrate surface.

[0022]

[0025] In one or more embodiments, the feed gas carrying the chemical species from the mixing channel reaches the upper plenum (or lower plenum in a different configuration). The mixing channel is fluidly connected to a central region of the gas volume and has a mixer disposed therein to increase the gas flow temperature. The gas flows through the mixing channel and the mixer into the processing space. The processing gas interacts with the wafer surface to cause surface processing (deposition or etching). The processing gas, including by-products, is removed through an outlet. In this way, the mixer advantageously increases the temperature of the gas flow, eliminating the need for gas preheating and improving temperature uniformity within the processing chamber. The presence of the mixer in the mixing channel is effective in increasing the gas inflow rate and is cost-effective because an additional preheating system is not required. Furthermore, the mixer does not affect the precursor delivery time.

[0023]

[0026] 1 and 2, one or more embodiments of the present disclosure are directed to a gas distribution apparatus 100 configured to improve mixing uniformity while minimizing system pressure drop. In some embodiments, the gas distribution apparatus 100 includes a mixing plate 110 adjacent to a backplate 132 of a showerhead 130. The mixing plate 110 has a rear surface 112 and a front surface 114 that define a thickness of the mixing plate. The mixing plate 110 may have any suitable thickness. In some embodiments, the thickness of the mixing plate is in the range of 60 mm to 85 mm, including in the range of 60 mm to 80 mm, or in the range of 70 mm to 80 mm.

[0024]

[0027] The mixing plate 110 includes a mixing channel 120 having an upper portion 122 and a lower portion 124 that define the length of the mixing channel. The length of the mixing channel can be any suitable length. In some embodiments, the length of the mixing channel is in the range of 200 mm to 350 mm, including in the range of 225 mm to 325 mm or in the range of 250 mm to 300 mm.

[0025]

[0028] The upper portion 122 of the mixing channel 120 has a first inner diameter ID1, and the lower portion 124 of the mixing channel 120 has a second inner diameter ID2 that is not equal to the first inner diameter ID1. In embodiments of the present disclosure, providing a larger mixing space, such as when the first inner diameter ID1 is larger than the second inner diameter ID2, advantageously improves uniformity. In some embodiments, the first inner diameter ID1 is at least 1.5 times larger than the second inner diameter ID2. In some embodiments, the first inner diameter ID1 is twice as large as the second inner diameter ID2. In one or more specific embodiments, the first inner diameter ID1 is in a range of 20 mm to 40 mm, and the second inner diameter ID2 is in a range of 10 mm to 25 mm.

[0026]

[0029] In some embodiments of the present disclosure, an injector inlet structure is provided that improves gas mixing uniformity before the mixture is introduced into a processing region above the substrate surface. In some embodiments, the mixing plate 110 includes at least two gas inlets 125 that are fluidly coupled to the upper portion 122 of the mixing channel 120. In some embodiments, each of the at least two gas inlets 125 is configured to flow a different gas.

[0027]

[0030] In some embodiments, there are two gas inlets 125 arranged at equally spaced angles relative to the central axis 150A of the mixing channel 120. In some embodiments, there are two gas inlets 125 arranged on the same side of the central axis 150A of the mixing channel 120 as the mixing channel 120. In some embodiments, there are two gas inlets 125 arranged on the same side of the central axis 150A as the mixing channel 120, and the two gas inlets 125 arranged on the same side of the central axis 150A as the mixing channel 120 are also arranged at equally spaced angles relative to the central axis 150A of the mixing channel 120. In some embodiments, there are three gas inlets 125 arranged at equally spaced angles relative to the central axis 150A of the mixing channel 120 to create a swirl flow pattern.

[0028]

[0031] In embodiments where the mixing plate 110 has two gas inlets 125, at least one of the two gas inlets 125 is radially aligned with the upper portion 122 of the mixing channel 120. In other embodiments where the mixing plate 110 has two gas inlets 125, each of the two gas inlets 125 is radially aligned with the upper portion 122 of the mixing channel 120. In some embodiments, there are three gas inlets 125, and each of the three gas inlets 125 comprises three inlets radially aligned with the upper portion 122 of the mixing channel 120. Stated another way, in embodiments where there are three gas inlets 125, and each of the three gas inlets 125 comprises three inlets radially aligned with the upper portion 122 of the mixing channel 120, there are nine gas inlets 125 radially aligned with the upper portion 122 of the mixing channel 120.

[0029]

[0032] In embodiments where the mixing plate 110 has two gas inlets 125, at least one of the two gas inlets 125 is tangentially aligned with the upper portion 122 of the mixing channel 120. In other embodiments where the mixing plate 110 has two gas inlets 125, each of the two gas inlets 125 is tangentially aligned with the upper portion 122 of the mixing channel 120. In some embodiments, there are three gas inlets 125, and each of the three gas inlets 125 includes three inlets that are tangentially aligned with the upper portion 122 of the mixing channel 120. Stated another way, in embodiments where there are three gas inlets 125, and each of the three gas inlets 125 includes three inlets that are tangentially aligned with the upper portion 122 of the mixing channel 120, there are nine gas inlets 125 that are tangentially aligned with the upper portion 122 of the mixing channel 120.

[0030]

[0033] The gas distribution apparatus further includes a mixer 150 disposed within the thickness of the mixing plate 110 in the upper portion 122 of the mixing channel 120. The mixer 150 includes a top plate 152 and a mixer stem 154 extending from the top plate 152. The top plate 152 includes a top surface 152A and a bottom surface 152B that define the thickness of the top plate 152. The top plate 152 may have any suitable thickness. In some embodiments, the thickness of the top plate 152 is in the range of 4 mm to 10 mm, including in the range of 5 mm to 9 mm, or in the range of 6 mm to 8 mm.

[0031]

[0034] In some embodiments, the top plate 152 of the mixer 150 includes at least one upper inlet 151 that extends through the thickness of the top plate 152 into the mixing channel 120. In some embodiments, the at least one upper inlet 151 is configured to flow a different gas than one of the at least two gas inlets 125. In some embodiments, the at least one upper inlet 151 is configured to flow a different gas than each of the at least two gas inlets 125.

[0032]

[0035] The mixer stem 154 includes a top portion 155 and a bottom portion 156 that define the length of the mixer stem. The mixer stem 154 may be any suitable shape. The length of the mixer stem may be any suitable length. In some embodiments, the length of the mixer stem is in the range of 60 mm to 150 mm, including in the range of 70 mm to 140 mm, or in the range of 80 mm to 130 mm, or in the range of 90 mm to 120 mm.

[0033]

[0036] In some embodiments, the upper portion 155 of the mixer stem 154 abuts the top plate 152 and extends into the upper portion 122 of the mixing channel 120. In certain embodiments, the upper portion 155 of the mixer stem 154 has a flat surface that abuts the bottom surface of the top plate 152.

[0034]

[0037] The mixer stem 154 is positioned inside the mixing channel 120 to increase the gas flow temperature. The mixer stem 154 can have any shape and / or size to fit inside the mixing channel 120. The mixer stem 154 can be, for example, straight, circular, square, oval, rectangular, or elliptical. Furthermore, the overall shape of the mixer stem 154 can be configured with repeating units that are parallel, perpendicular, or concentric to one another. In one or more embodiments, the mixer stem 154 has an overall shape that is substantially free of dead space that would impede gas flow. As used herein and in the appended claims, the term "substantially free of dead space" means that the gas flow is impeded by dead space by less than about 10%, less than about 5%, or less than about 1%.

[0035]

[0038] In some embodiments, the mixer stem 154 is located at the entrance to the upper portion 122 of the mixing channel 120. In some embodiments, the mixer stem 154 is located entirely within the upper portion 122 of the mixing channel 120. In some embodiments, the top 155 of the mixer stem 154 abuts the top plate 152 and extends into the upper portion 122 of the mixing channel 120, and the bottom 156 of the mixer stem 154 extends into the upper portion 122 of the mixing channel 120. In other embodiments, the top 155 of the mixer stem 154 abuts the top plate 152 and extends into the upper portion 122 of the mixing channel 120, and the bottom 156 of the mixer stem 154 extends into the lower portion 124 of the mixing channel 120.

[0036]

[0039] In some embodiments, the mixer 150 includes a plurality of blades 158 positioned along the length of the mixer stem. The mixer 150 may have any suitable number of blades 158 along the length of the mixer stem. In some embodiments, the blades 158 occupy a range of 90° to 270° of a circle and are positioned at various z-direction positions along the length of the mixer stem. In some embodiments, one or more of the plurality of blades 158 are oriented at an angle of 180° in the z-direction relative to the length of the mixer stem. In some embodiments, there are two to eight blades 158 evenly spaced apart along the length of the mixer stem. In one or more specific embodiments, there are three to six blades 158 evenly spaced apart along the length of the mixer stem. In some embodiments, there are four blades 158 evenly spaced apart along the length of the mixer stem.

[0037]

[0040] In some embodiments, the front plate 138 and back plate 132 of the showerhead 130 are spaced apart to form a gas volume 135. In some embodiments, the front plate 138 of the showerhead 130 has an inner surface 137 adjacent the gas volume and an outer surface 139 including a plurality of apertures 136 extending therethrough. In some embodiments, the gas volume has a central region 135A and an outer region 135B that define a length of the gas volume 135. In one or more embodiments, the mixing channel 120 is fluidly connected to the central region 135A of the gas volume 135.

[0038]

[0041] In one or more embodiments, the backplate 132 of the showerhead 130 is angled toward the frontplate 138 at the outer region 135B of the gas volume 135 to form a funnel shape. For example, in some embodiments, the backplate 132 of the showerhead 130 tapers toward the frontplate 138 at the outer region 135B of the gas volume 135 so that the showerhead 130 is conical or funnel-shaped. In such embodiments, the frontplate 138 has a width that is greater than the width of the backplate 132.

[0039]

[0042] In one or more embodiments, the showerhead 130 is funnel-shaped, and the mixing channel 120 creates a swirl of the gas volume 135 that spirals outward from a central region 135A toward an outer region 135B. In some embodiments, the swirl helps to mix the gases within the gas volume 135.

[0040]

[0043] In some embodiments, the showerhead 130 further includes at least one sidewall 134 that connects the front plate 138 to the back plate 132 and defines the outer periphery 133 of the outer region 135B of the gas volume 135. In some embodiments, the at least one sidewall 134 is an insulator that electrically isolates the front plate 138 from the back plate 132. The insulator can be any insulator known to one of ordinary skill in the art.

[0041]

[0044] In other embodiments, not shown, the showerhead 130 does not include any sidewalls 134 , so that the front plate 138 directly interfaces with the back plate 132 and defines the gas volume 135 .

[0042]

[0045] In one or more embodiments, the gas distribution apparatus 100 includes a substrate support 222, or pedestal, spaced from the front plate 138 of the showerhead 130. In some embodiments, the substrate support 222 includes a heater (not shown). In some embodiments, the substrate support 222 holds a substrate 224. The temperature of the substrate 224 and the substrate processing region 226 may be controlled in part by the substrate support 222. The substrate support 222 may be thermally coupled to a cooling / heating unit (not shown) that adjusts the temperature of the substrate support 222 and the substrate 224, for example, to between about −100° C. and about 100° C.

[0043]

[0046] In some embodiments, to generate a plasma in the gas volume 135, one of the front plate 138 and the back plate 132 is connected to an RF power source (not shown), and the other of the front plate 138 and the back plate 132 is connected to an electrical ground. The plasma may be ignited either in the gas volume 135 or in the substrate processing region 226 below the showerhead 130. In one or more embodiments, the plasma exists in the gas volume 135 to generate precursors from the inflow of process gases that has passed through the mixing channel 120, which includes the mixer 150. Typically, an alternating voltage in the radio frequency (RF) range is applied between the back plate 132 and the front plate 138 of the showerhead 130 to ignite a plasma in the gas volume 135 during deposition. The RF power source generates a high RF frequency of 13.56 MHz, but may also generate other frequencies, either alone or in combination with the 13.56 MHz frequency.

[0044]

[0047] In some embodiments, the RF energy provided by the RF power source may be in the frequency range of about 2 MHz to about 60 MHz, or alternatively, non-limiting frequencies such as 2 MHz, 13.56 MHz, 27.12 MHz, or 60 MHz may be used. In some embodiments, multiple RF power sources (i.e., two or more RF power sources) may be provided to provide RF energy at multiple of the above frequencies.

[0045]

[0048] Additional embodiments of the present disclosure are directed to a processing chamber 200 including a gas distribution apparatus 100 configured to improve mixing uniformity while minimizing system pressure drop. In some embodiments, the processing chamber 200 includes a chemical vapor deposition (CVD) apparatus. Referring to FIG. 2 , the processing chamber 200 includes a chamber body 201 having a top wall 204, a bottom wall 206, and at least one sidewall 208 that define a processing space 212. In some embodiments, the processing chamber 200 further includes the gas distribution apparatus 100 described herein. The processing chamber 200 also includes a substrate support 222 spaced apart from the front plate 138 of the showerhead 130.

[0046]

[0049] In one or more embodiments, as shown in FIG. 2 , the process chamber 200 is controlled by a controller 290. In an exemplary embodiment, the controller 290 includes a hard disk drive, a floppy disk drive, and a processor. The processor includes a single-board computer (SBC), analog and digital input / output boards, interface boards, and stepper motor controller boards. Various components of the process chamber 200 conform to the Versa Modular European (VME) standard, which defines the dimensions and types of boards, card cages, and connectors. The VME standard also defines the bus structure as having a 16-bit data bus and a 24-bit address bus.

[0047]

[0050] The controller 290 controls all activity in the process chamber 200. The controller executes system control software, which is a computer program stored on a computer-readable medium, which may be a hard disk drive or other type of memory. The computer program includes sets of instructions that dictate the timing, mixture of gases, chamber pressure, chamber temperature, RF power levels, susceptor position, and other parameters of a particular process. Other computer programs stored on other memory devices, including, for example, a floppy disk or other suitable drive, may also be used to instruct the system controller.

[0048]

[0051] The controller 290 includes a central processing unit (CPU) 292, a memory 294, one or more support circuits 296 used to control processing sequences and regulate gas flows, and an input / output (I / O) 298. The CPU 292 may be any form of general-purpose computer processor that may be used in an industrial environment. Software routines may be stored in the memory 294 (e.g., random access memory, read-only memory, floppy or hard disk drive, or other form of digital storage). The support circuits 296 are typically coupled to the CPU 292 and may include cache, clock circuits, an input / output system, a power supply, etc.

[0049]

[0052] The memory 294 may include one or more of transient memory (e.g., random access memory) and non-transient memory (e.g., storage). The processor's memory 294 or computer-readable medium may be, for example, one or more of readily available memory such as random access memory (RAM), read-only memory (ROM), a floppy disk, a hard disk, or any other form of local or remote digital storage. The memory 294 may hold a set of instructions operable by the processor to control system parameters and components.

[0050]

[0053] The processes may generally be stored in memory 294 as software routines that, when executed by a processor, cause the process chamber to perform the processes of the present disclosure. The software routines may also be stored and / or executed by a second processor (not shown) that is remote from the hardware controlled by the processor. Some or all of the methods of the present disclosure may also be performed in hardware. Thus, the processes may be implemented in software and executed using a computer system in hardware (e.g., an application specific integrated circuit or other type of hardware implementation), or a combination of software and hardware. The software routines, when executed by a processor, transform a general-purpose computer into a special-purpose computer (controller 290) that controls the operation of the chamber to perform the processes.

[0051]

[0054] The controller 290 of some embodiments is configured to interact with hardware to perform programmed functions. For example, the controller 290 may be configured to control one or more valves, motors, actuators, power supplies, etc.

[0052]

[0055] In some embodiments, a controller 290 is coupled to the chamber apparatus 221. The controller has one or more configurations for controlling various functions and processes. In some embodiments, the configuration is selected from a first configuration for rotating the substrate support about a central axis, a second configuration for providing a flow of gas into a non-plasma processing region, a third configuration for providing a flow of gas into a plasma processing region, a fourth configuration for providing power to the plasma processing region to ignite a plasma, and / or a fifth configuration for pulsing power to the plasma processing region to generate on and off times for the plasma processing region.

[0053]

[0056] One or more embodiments of the present disclosure are directed to a method for depositing a film on a substrate. In one or more embodiments, the method includes flowing one or more of a precursor, an oxidizer, or a reducer through a showerhead having a front plate and a back plate spaced apart to form a gas volume, the front plate having an inner surface adjacent the gas volume and an outer surface including a plurality of apertures extending therethrough, the gas volume having a central region, an outer region, and an inlet fluidly connected to the central region of the gas volume, the inlet having an inner and outer side and a mixer disposed inside the inlet for increasing the gas flow temperature. The flow is then delivered from the showerhead front plate to a substrate, and a film is formed on the substrate. In some embodiments, the mixer increases the flow temperature without affecting the time it takes to deliver the flow.

[0054]

[0057] According to one or more embodiments, the substrate is subjected to processing before and / or after layer formation. This processing can be performed in the same chamber or in one or more separate processing chambers. In some embodiments, the substrate is moved from the first chamber to a separate second chamber for further processing. The substrate can be moved directly from the first chamber to the separate processing chamber, or it can be moved from the first chamber to one or more transfer chambers and then to the separate processing chamber. Thus, the processing equipment can include multiple chambers in communication with a transfer station. This type of equipment is sometimes referred to as a "cluster tool" or a "clustered system," among other terms.

[0055]

[0058] Generally, a cluster tool is a modular system with multiple chambers that perform various functions, including substrate center detection and orientation, degassing, annealing, deposition, and / or etching. According to one or more embodiments, the cluster tool includes at least a first chamber and a central transfer chamber. The central transfer chamber may house a robot capable of transferring substrates back and forth between processing chambers and load lock chambers. The transfer chamber is typically maintained under vacuum and provides an intermediate stage for transferring substrates back and forth from one chamber to another and / or to a load lock chamber located at the front end of the cluster tool. Two well-known cluster tools that may be adapted for the present invention are the Centura® and Endura®, both available from Applied Materials, Inc. of Santa Clara, California. However, the exact arrangement and combination of chambers may be varied to perform specific steps of the processes described herein. Other processing chambers that can be used include, but are not limited to, cyclical layer deposition (CLD), atomic layer deposition (ALD), chemical vapor deposition (CVD), physical vapor deposition (PVD), etching, pre-cleaning, chemical cleaning, thermal treatments such as RTP, plasma nitridation, degassing, alignment, hydroxylation, and other substrate processing. Performing processing in a chamber on a cluster tool can avoid surface contamination of the substrate from atmospheric impurities without oxidation prior to deposition of subsequent films.

[0056]

[0059] According to one or more embodiments, the substrate is continuously under vacuum or "load-lock" conditions and is not exposed to ambient air as it moves from one chamber to the next. The transfer chamber is therefore under vacuum and "pumped down" under vacuum pressure. An inert gas may be present in the processing chamber or the transfer chamber. In some embodiments, an inert gas is used as a purge gas to remove some or all of the reactants. According to one or more embodiments, a purge gas is injected at the outlet of the deposition chamber to prevent reactants from moving from the deposition chamber to the transfer chamber and / or additional processing chambers. Thus, the flow of inert gas forms a curtain at the outlet of the chamber.

[0057]

[0060] Substrates can be processed in a single-substrate deposition chamber, where a single substrate is loaded, processed, and unloaded before another substrate is processed. Substrates can also be processed in a continuous manner, where multiple substrates are individually loaded into a first portion of the chamber, moved through the chamber, and unloaded from a second portion of the chamber, similar to a conveyor system. The geometry of the chamber and associated conveyor system can form a linear or curved path. Additionally, the processing chamber can be a carousel, where multiple substrates move about a central axis and are exposed to processes such as deposition, etching, annealing, cleaning, etc., along the path of the carousel.

[0058]

[0061] During processing, the substrate may be heated or cooled. Such heating or cooling may be achieved by any suitable means, including, but not limited to, changing the temperature of the substrate support and flowing heated or cooled gases over the substrate surface. In some embodiments, the substrate support includes a heater / cooler that can be controlled to conductively change the substrate temperature. In one or more embodiments, the gas used (either reactive or inert) is heated or cooled to locally change the substrate temperature. In some embodiments, a heater / cooler is positioned within the chamber adjacent to the substrate surface to convectively change the substrate temperature.

[0059]

[0062] The substrate may also be stationary or rotating during processing. A rotating substrate may rotate (about the substrate axis) continuously or in discontinuous steps. For example, the substrate may rotate throughout the entire process or may rotate in small increments between exposures to various reactive or purge gases. Rotating the substrate (continuously or in steps) during processing may help minimize the effects of, for example, local variations in gas flow profiles, producing a more uniform deposition or etching.

[0060]

[0063] Spatially relative terms such as "beneath," "below," "lower," "above," and "upper" may be used herein for ease of description to describe the relationship of one element or feature to another element or feature illustrated in the figures. It will be understood that the spatially relative terms are intended to encompass various orientations of the device during use or operation in addition to the orientation depicted in the figures. Thus, for example, if the device in the figures is turned over, an element described as "below" or "beneath" another element or feature would then be located "above" the other element or feature. Thus, the exemplary term "below" can encompass both an orientation of above and below. The device may be otherwise oriented (rotated 90 degrees or to another orientation), and the spatially relative descriptions used herein can be interpreted accordingly.

[0061]

[0064] In the context of describing the materials and methods discussed herein (particularly in the context of the claims which follow), the use of "a" and "an," "the," and similar referents should be construed to encompass both the singular and the plural unless otherwise indicated herein or clearly contradicted by context. The recitation of ranges of values ​​herein is merely intended to serve as a shorthand method of referring individually to each separate value falling within the range, unless otherwise indicated herein, and each separate value is incorporated herein as if it were individually listed. All methods described herein can be performed in any suitable order unless otherwise indicated herein or clearly contradicted by context. The use of any and all examples, or exemplary language (e.g., "such as") provided herein, is intended merely to better describe the materials and methods and does not limit the scope unless otherwise specified in the claims. No language in this document should be construed as indicating any non-claimed element as essential to the practice of the disclosed materials or methods.

[0062]

[0065] Throughout this document, references to "one embodiment," "a particular embodiment," "one or more embodiments," or "an embodiment" mean that a particular feature, structure, material, or characteristic described in connection with an embodiment is included in at least one embodiment of the present disclosure. Thus, the appearances of the phrases "in one or more embodiments," "a particular embodiment," "in one embodiment," or "in an embodiment" in various places throughout this document are not necessarily all referring to the same embodiment of the present disclosure. In one or more embodiments, the particular features, structures, materials, or characteristics may be combined in any suitable manner.

[0063]

[0066] Although the disclosure herein has been described with reference to particular embodiments, it is to be understood that these embodiments are merely illustrative of the principles and applications of the disclosure. It will be apparent to those skilled in the art that various modifications and variations can be made to the disclosed method and apparatus without departing from the spirit and scope of the disclosure. Therefore, the disclosure is intended to cover modifications and variations that come within the scope of the appended claims and their equivalents.

Claims

1. 1. A gas distribution device comprising: a mixing plate adjacent to the back plate of the showerhead, a mixing plate having a rear surface and a front surface defining a thickness of the mixing plate, the mixing plate having a mixing channel including an upper portion and a lower portion defining a length of the mixing channel, the upper portion having a first inner diameter and the lower portion having a second inner diameter unequal to the first inner diameter, the mixing plate including at least two gas inlets in fluid communication with the upper portion of the mixing channel; a mixer disposed in the thickness of the mixing plate in the upper portion of the mixing channel, a mixer having a top plate and a mixer stem extending from the top plate, the mixer stem including a top and a bottom defining a length of the mixer stem, the top of the mixer stem contacting the top plate and extending into the upper portion of the mixing channel, the mixer including a plurality of blades positioned along the length of the mixer stem; a gas distribution device comprising:

2. Two gas inlets are located on the same side of the mixing channel relative to a central axis of the mixing channel. The gas distribution apparatus of claim 1 .

3. Two gas inlets are arranged at equal angles relative to the central axis of the mixing channel. The gas distribution apparatus of claim 1 .

4. Three inlets are arranged at equally spaced angles relative to the central axis of the mixing channel to create a swirl flow pattern. The gas distribution apparatus of claim 1 .

5. each of the at least two gas inlets is configured to flow a different gas; The gas distribution apparatus of claim 1 .

6. At least one of the two gas inlets is radially aligned with the upper portion of the mixing channel. The gas distribution apparatus of claim 1 .

7. three gas inlets, each of the three gas inlets including three inlets radially aligned with the upper portion of the mixing channel; 7. The gas distribution apparatus of claim 6.

8. the first inner diameter is at least 1.5 times larger than the second inner diameter; The gas distribution apparatus of claim 1 .

9. The first inner diameter is twice as large as the second inner diameter. The gas distribution apparatus of claim 8.

10. The first inner diameter is in the range of 20 mm to 40 mm, and the second inner diameter is in the range of 10 mm to 25 mm.

10. The gas distribution apparatus of claim 9.

11. one or more of the plurality of blades are oriented at an angle of 180° in the z-direction relative to the length of the mixer stem; The gas distribution apparatus of claim 1 .

12. A number of blades ranging from 3 to 6 are evenly spaced along the length of the mixer stem. The gas distribution apparatus of claim 1 .

13. the front plate and the back plate of the showerhead are spaced apart to form a gas volume; The gas distribution apparatus of claim 1 .

14. the front plate having an inner surface adjacent the gas volume and an outer surface including a plurality of apertures extending therethrough; 14. The gas distribution apparatus of claim 13.

15. the gas volume having a central region and an outer region that define a length of the gas volume; 15. The gas distribution apparatus of claim 14.

16. 1. A processing chamber comprising: a chamber body having a top wall, a bottom wall, and at least one sidewall defining a processing space; a mixing plate adjacent to the back plate of the showerhead, a rear surface and a front surface that define a thickness of the mixing plate; a mixing channel including an upper portion and a lower portion defining a length of the mixing channel; the upper portion has a first inner diameter and the lower portion has a second inner diameter unequal to the first inner diameter; a mixing plate including at least two gas inlets in fluid communication with the upper portion of the mixing channel; a mixer disposed in the thickness of the mixing plate in the upper portion of the mixing channel; a top plate and a mixer stem extending from the top plate; the mixer stem includes a top and a bottom defining a length of the mixer stem, the top of the mixer stem contacting the top plate and extending into the upper portion of the mixing channel; a mixer including a plurality of blades positioned along the length of the mixer stem; a substrate support spaced from a front plate of the showerhead; a processing chamber comprising:

17. The two gas inlets are arranged on the same side of the mixing channel with respect to the central axis of the mixing channel or are arranged at equally spaced angles with respect to the central axis of the mixing channel.

17. The processing chamber of claim 16.

18. Three inlets are arranged at equally spaced angles relative to the central axis of the mixing channel to create a swirl flow pattern.

17. The processing chamber of claim 16.

19. At least one of the two gas inlets is radially aligned with the upper portion of the mixing channel.

17. The processing chamber of claim 16.

20. the front plate and the back plate of the showerhead are spaced apart to form a gas volume; the front plate having an inner surface adjacent the gas volume and an outer surface having a plurality of apertures extending therethrough, the gas volume having a central region and an outer region defining a length of the gas volume; 17. The processing chamber of claim 16.

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