Package Structure

Abstract

The present invention provides a semiconductor package structure, LED device, and packaging method. The package structure includes a substrate, a transparent cover, and a fence connected to the substrate. The fence, the transparent cover, and the substrate form a mounting area. The fence includes an outer retaining wall and an inner retaining wall, a groove between the outer retaining wall and the inner retaining wall, and a sealing member installed in the groove. The transparent cover covers the inner retaining wall and the mounting area and is inserted into the groove. The LED package structure includes a protective member installed on the edge of the transparent cover. The protective member has a sealing portion that seals the gap between the transparent cover and the outer retaining wall, or a contact portion that is connected to the sealing portion and abuts against the upper edge of the transparent cover. The LED package structure of the present invention combines the advantages of semi-inorganic packages and all-inorganic packages, overcoming the localized limitations of both and improving hermeticity and stability.

Description

[Technical Field]

[0001] The present invention relates to the field of semiconductor packaging technology, and in particular to a packaging structure, an LED device and a packaging method. [Background technology]

[0002] Semiconductor packaging technology is very important for the performance of semiconductor devices, but existing technologies have the following problems:

[0003] UV-LED packaging has problems such as poor airtightness, difficulty in calculating the amount of adhesive used, high light loss, and weak welding, which can easily lead to UV-LED device failure.In addition, UV-LEDs are invisible to the naked eye when in use, making it difficult to tell whether they are working or not.

[0004] When LED products are in operation, heat dissipation problems are likely to occur, so a heat dissipation device is usually added. When using a heat dissipation device, an insulating layer is used to prevent short circuits, but the insulating layer is easily removed, making short circuits more likely to occur, and the series and parallel connection circuits on the board are already fixed, so this is not very applicable.

[0005] 3D TOF (3 Dimensions Time Of Flight) devices are light-emitting device devices that combine a new generation of distance measurement and 3D imaging technology. The current package structure of light-emitting device devices mainly includes a substrate, a package body, a transparent member, and a light-emitting device. The transparent member includes a transparent layer and a diffusion layer, and the diffusion layer includes a diffusion structure, which refracts the laser into a large-angle beam to protect human eyes. For this purpose, a photoelectric detection device is installed inside the internal storage cavity. However, since the diffusion layer is easily peeled off, the photoelectric detection device can detect whether the diffusion layer is peeled off, but cannot accurately detect whether some areas of the diffusion layer are damaged, so the photoelectric detection device cannot reliably protect human eyes. Summary of the Invention [Problem to be solved by the invention]

[0006] In order to overcome at least one of the problems existing in the above-mentioned existing technologies, the present invention provides a packaging structure, an LED device, and a packaging method to achieve better hermeticity and stability, ensure the reliability of the packaging structure, and at the same time, improve the sealing effect of the semiconductor device and increase the light output rate of the semiconductor device. [Means for solving the problem]

[0007] A package structure comprising a substrate, a light-emitting element, and a fence connected to the substrate and a transparent lid, wherein the light-emitting element is an LED chip, the substrate has a front and a back surface facing each other, the light-emitting element is fixed to the front surface of the substrate, and the transparent lid is connected to the fence.

[0008] Preferably, the fence is surrounded by a transparent lid and the substrate to form a mounting area, the fence includes an outer retaining wall and an inner retaining wall, there is a groove between the outer retaining wall and the inner retaining wall, the packaging structure further includes a sealing member installed in the groove, the transparent lid covers the inner retaining wall and the mounting area, and the transparent lid is inserted and connected into the groove and contacts the sealing member, the packaging structure further includes a protective member installed on the edge of the transparent lid, the protective member has a sealing portion used to seal the gap between the transparent lid and the outer retaining wall, and an abutment portion connected to the sealing portion and abutting the upper end of the transparent lid.

[0009] Preferably, a welding layer is installed on the bottom of the transparent cover, a first circuit layer is installed on the front of the substrate, the first circuit layer includes a pattern used for connecting with the welding layer, the first circuit layer further includes a welding plate to be welded to the LED chip, a shielded package cavity is formed between the transparent cover and the substrate, the LED chip is installed in the package cavity and welded to the welding plate, and the welding layer is welded to the pattern of the first circuit layer.

[0010] Preferably, the fence has an inner wall, and at least a portion of the top of the LED chip has a mounting groove penetrating the top part of the fence, the mounting groove having a groove bottom surface and groove side walls, the packaging structure further includes a positioning block installed in the mounting groove, the bottom surface of the transparent cover abutting against the bottom surface of the mounting groove, the side surfaces of the transparent cover abutting against the multiple positioning blocks, the side surfaces of the transparent cover forming a sealant groove with the bottom surface and side walls of the mounting groove, the packaging structure further includes a sealant installed in the sealant groove and covering the transparent cover.

[0011] Preferably, a first circuit layer is disposed on the front surface of the substrate, the light emitting device is disposed on the front surface of the substrate and is connected to the first circuit layer, the fence is disposed on the front surface of the substrate and includes a first portion and a second portion on the front surface separated by the substrate, the first portion and the second portion are respectively arranged as anode conductors and cathode conductors connected to the electrical signal detection module, and the anode conductors and cathode conductors are disposed around the light emitting device and the first circuit layer, and the transparent cover includes a light-transmitting conductive layer, a diffusion layer and a light-transmitting layer which are stacked, and the light-transmitting conductive layer is connected to the anode conductor and the cathode conductor.

[0012] The package structure further includes a fluorescent material, which is disposed on at least one of the support structure and the transparent cover, and which is used to obtain visible light by a fluorescent reaction that occurs when the fluorescent material is irradiated with light emitted by the LED chip.

[0013] Preferably, the substrate is a multi-layer substrate, and the multi-layer substrate comprises:

[0014] a first substrate having a front surface and a back surface facing each other, a first circuit layer disposed on the front surface, a second circuit layer disposed on the back surface, the first circuit layer and the second circuit layer being electrically connected, the first circuit layer including a first circuit anode and a first circuit cathode;

[0015] a ring-shaped package body disposed on the front surface of the first substrate and surrounding the periphery of the first circuit anode and the first circuit cathode;

[0016] a second substrate, which is connected to the second circuit layer on the back surface of the first circuit by a welding process and has a heat dissipation layer on its back surface;

[0017] Preferably, a first circuit layer is installed on the front surface of the substrate, the first circuit layer including a plurality of sets of anode welding disks and cathode welding disks; and a second circuit layer is installed on the rear surface of the substrate, the second circuit layer including anode terminals and cathode terminal sets corresponding to the plurality of sets of anode welding disks and cathode welding disks, the anode terminals of one set being symmetrical with the cathode terminals and installed on opposite sides of the rear surface of the substrate, the anode terminals being arranged in a linearly spaced arrangement and equidistant on the same side of the rear surface of the substrate, and the cathode terminals being arranged in a linearly spaced arrangement and equidistant on the other side of the rear surface of the substrate and facing each of the anode terminals, each anode welding disk being electrically connected to one of the anode terminals through an anode conductive hole that passes through the substrate, and each cathode welding disk being electrically connected to one of the cathode terminals through a cathode conductive hole that passes through the substrate.

[0018] A plurality of the LED chips are installed, and each of the LED chips is electrically connected to one set of the anode welding plate and the cathode welding plate.

[0019] Preferably, the present invention further includes an optical window component, the optical window component including a transparent lid and a metal tube cap, the metal tube cap is welded to the periphery of the transparent lid, the transparent lid and the metal tube cap are fixed in the mounting groove, and the bottoms of the transparent lid and the metal tube cap are both abutted against the bottom surface of the mounting groove, and are surrounded by the transparent lid, the metal tube cap, the front surface of the substrate and the fence, etc. to form an accommodating cavity for accommodating the LED chip, and the surfaces of the transparent lid and the metal tube cap are surrounded by the wall surface of the mounting groove to form a sealant groove, the packaging structure further includes a sealant, and the sealant is installed in the sealant groove.

[0020] Preferably, the inner wall of the fence is coated with a reflective layer that reflects light emitted by the light-emitting element, and the inner wall is inclined from the first end surface toward the light-emitting element and forms an included angle of more than 0° but less than 90° with the first end surface. [Effects of the Invention]

[0021] The packaging structure provided by the present invention has consistent packaging adhesive volume, good conformity, excellent airtightness, low light loss, strong welding, black light visibility, and safety in use. [Brief explanation of the drawings]

[0022] In order to more clearly explain the technical means in the embodiments of the present invention, the drawings used in the embodiments will be briefly described below. It goes without saying that the drawings described below are only some embodiments of the present invention, and those skilled in the art can obtain other drawings based on these drawings without any creative work.

[0023] [Figure 1] 1 is a structural schematic diagram of an LED package structure provided by an embodiment of the present invention;

[0024] [Figure 1-a] 3 is another structural schematic diagram of an LED package structure provided by an embodiment of the present invention;

[0025] [Figure 1-b] 3 is another structural schematic diagram of an LED package structure provided by an embodiment of the present invention;

[0026] [Figure 1-c] 3 is another structural schematic diagram of an LED package structure provided by an embodiment of the present invention;

[0027] [Figure 1-d] 3 is another structural schematic diagram of an LED package structure provided by an embodiment of the invention.

[0028] [Figure 1-e] 3 is another structural schematic diagram of an LED package structure provided by an embodiment of the present invention;

[0029] [Figure 2] 1 is a schematic diagram of a fence in an LED package structure provided by an embodiment of the present invention.

[0030] [Figure 3] 3 is another structural schematic diagram of an LED package structure provided by an embodiment of the present invention;

[0031] [Figure 4] 4 is a flowchart of a packaging method for an LED package structure provided by an embodiment of the present invention.

[0032] [Figure 5] 1 is a schematic cross-sectional view of an organic packaging structure provided by the prior art;

[0033] [Figure 6] 1 is a schematic cross-sectional view of a semi-inorganic packaging structure provided by the prior art;

[0034] [Figure 7] 1 is a cross-sectional schematic diagram of an all-inorganic package structure provided by the prior art.

[0035] [Figure 8] 1 is a cross-sectional schematic diagram of an all-inorganic package structure provided by an embodiment of the present invention.

[0036] [Figure 9] 1 is a cross-sectional schematic diagram of an all-inorganic package structure provided by an embodiment of the present invention.

[0037] [Figure 10] 1 is a cross-sectional view of an LED package structure provided by an embodiment of the present invention.

[0038] [Figure 11] 1 is a perspective view of an LED package structure provided by an embodiment of the present invention;

[0039] [Figure 12] 1 is a cross-sectional view of an LED package structure provided by an embodiment of the present invention.

[0040] [Figure 13] 1 is a perspective view of an LED package structure provided by an embodiment of the present invention;

[0041] [Figure 14] 4 is a flowchart of an LED packaging method provided by an embodiment of the present invention.

[0042] [Figure 15] 3 is a flowchart of a substrate manufacturing step in an LED packaging method provided by an embodiment of the present invention.

[0043] [Figure 16] 4 is a flowchart showing the step of mounting an LED chip on the front surface of the substrate in the LED packaging method provided by the embodiment of the present invention.

[0044] [Figure 17]4 is a flowchart showing a step of placing a sealant in the sealant groove in an LED packaging method according to an embodiment of the present invention.

[0045] [Figure 18] 4 is a flowchart of an LED packaging method provided by an embodiment of the present invention.

[0046] [Figure 19] 1 is a cross-sectional view of a package structure of a light emitting device provided by an embodiment of the present invention;

[0047] [Figure 20] 1 is a top view of a light-emitting device package structure provided by an embodiment of the present invention, which does not include a transparent member and a conductive adhesive;

[0048] [Figure 21] 1 is a top view of a package structure of a light emitting device provided by an embodiment of the present invention;

[0049] [Figure 22] 1 is a cross-sectional view of an LED device provided by an embodiment of the present invention.

[0050] [Figure 23] 1 is a perspective view of an LED device provided by an embodiment of the present invention;

[0051] [Figure 24] 1 is a schematic diagram of an LED device provided by an embodiment of the present invention, which does not include a light-transmitting member.

[0052] [Figure 25] 1 is another schematic diagram of an LED device provided according to an embodiment of the present invention, which does not include a light-transmitting member.

[0053] [Figure 26] 1 is a cross-sectional view of an LED device provided by an embodiment of the present invention.

[0054] [Figure 27] 1 is a perspective view of an LED device provided by an embodiment of the present invention;

[0055] [Figure 28] 1 is a cross-sectional view of an LED device provided by an embodiment of the present invention.

[0056] [Figure 29] 1 is a perspective view of an LED device provided by an embodiment of the present invention;

[0057] [Figure 30] 2 is a flowchart of a first embodiment of an LED packaging method provided by an embodiment of the present invention.

[0058] [Figure 31] 3 is a flowchart illustrating a step of installing a phosphor on at least one of a support and a transparent member in an LED packaging method according to an embodiment of the present invention.

[0059] [Figure 32] 3 is a flowchart illustrating a step of installing a phosphor on at least one of a support and a transparent member in an LED packaging method according to an embodiment of the present invention.

[0060] [Figure 33] 35 is a cross-sectional view of the LED device provided by one embodiment of the present invention, taken along line AA of FIG. 34.

[0061] [Figure 33a] 2 is a schematic cross-sectional view of a circuit layer of an LED device provided by an embodiment of the present invention.

[0062] [Figure 34] 1 is a perspective view of an LED device provided according to an embodiment of the present invention;

[0063] [Figure 35] 1 is a cross-sectional view of an LED device provided according to another embodiment of the present invention.

[0064] [Figure 36] 3 is a top view of a first substrate and a third welding portion in an LED device provided by an embodiment of the present invention. FIG.

[0065] [Figure 37] 4 is a cross-sectional view of a second substrate, a first weld, a second weld, and a fourth weld in an LED device provided by an embodiment of the present invention. FIG.

[0066] [Figure 38] 3 is a top view of a second substrate in an LED device provided by an embodiment of the present invention. FIG.

[0067] [Figure 39] 1 is a flowchart of a first embodiment of a method for manufacturing a multi-layer substrate provided by an embodiment of the present invention.

[0068] [Figure 40] 42 is a schematic cross-sectional view of an LED device provided by one embodiment of the present invention, and is also a cross-sectional view taken along line AA in FIG. 41.

[0069] [Figure 41] 1 is a schematic overhead view of an LED device according to an embodiment of the present invention;

[0070] [Figure 42] 1 is a schematic rear structure diagram of an LED device provided according to an embodiment of the present invention.

[0071] [Figure 43] 43 is a schematic cross-sectional view taken along line BB in FIG. 42.

[0072] [Figure 44] 43 is a schematic cross-sectional view taken along line CC in FIG. 42.

[0073] [Figure 45] 1 is a schematic diagram showing the positional relationship between the anode and cathode welding plates on the front side of the substrate of an LED device provided by an embodiment of the present invention, the projection on the rear side of the substrate, and the anode and cathode terminals on the rear side of the substrate.

[0074] [Figure 45a] 3 is a schematic diagram of a rectangular circuit pattern formed by an anode welding plate and a cathode welding plate on the front surface of a substrate of an LED device provided by an embodiment of the present invention.

[0075] [Figure 46] 2 is a schematic structural diagram of a first circuit layer or a second circuit layer of an LED device provided according to an embodiment of the present invention;

[0076] [Figure 47] 2 is a schematic diagram showing the connection relationship of four LED chip circuits of an LED device provided by an embodiment of the present invention, which are independent of each other;

[0077] [Figure 47a] 1 is a schematic diagram of four parallel-connected LED chips of an LED device provided according to an embodiment of the present invention.

[0078] [Figure 47b] 1 is a schematic diagram of an LED device according to an embodiment of the present invention, which is matched with a peripheral circuit to realize parallel connection of four LED chips;

[0079] [Figure 48] 1 is a schematic diagram of four LED chips connected in series in an LED device provided according to an embodiment of the present invention;

[0080] [Figure 48a] 1 is a schematic diagram of an LED device according to an embodiment of the present invention, matching the LED device with a peripheral circuit to realize a series connection of four LED chips;

[0081] [Figure 49] 1 is a schematic diagram of four LED chips connected in series and parallel in an LED device provided according to an embodiment of the present invention.

[0082] [Figure 49a] 11 is a schematic diagram showing a series-parallel connection of four LED chips shown in FIG. 10 achieved by matching an LED device provided according to an embodiment of the present invention with a peripheral circuit.

[0083] [Figure 50] 10 is a schematic diagram of another example of a series-parallel connection of four LED chips in an LED device provided according to an embodiment of the present invention;

[0084] [Figure 50a] 51 is a schematic diagram showing the series-parallel connection of four LED chips shown in FIG. 50 achieved by matching an LED device provided by an embodiment of the present invention with a peripheral circuit.

[0085] [Figure 51] 1 is a schematic overhead view of the structure of an LED device provided by an embodiment of the present invention;

[0086] [Figure 51a] 52 is a schematic diagram of the shape of an anode welding disk and a cathode welding disk of an LED device provided by FIG. 51.

[0087] [Figure 52] 52 is a rear structural schematic diagram of the LED device provided by FIG. 51.

[0088] [Figure 53] 1 is a schematic overhead view of an LED device according to another embodiment of the present invention;

[0089] [Figure 54] 54 is a schematic rear structure diagram of the LED device provided by FIG. 53.

[0090] [Figure 55]1 is a cross-sectional view of an LED device provided by an embodiment of the present invention.

[0091] [Figure 56] 1 is a top view of a glass solder connected to a metal tube cap in an LED device provided by an embodiment of the present invention. FIG.

[0092] [Figure 57] 1 is a top view of a glass solder connected to a metal tube cap in an LED device provided by an embodiment of the present invention. FIG.

[0093] [Figure 58] 1 is a top view of a glass solder connected to a metal tube cap in an LED device provided by an embodiment of the present invention. FIG.

[0094] [Figure 59] 1 is a cross-sectional view of an LED device according to an embodiment of the present invention, in which a light-transmitting member is connected to a metal tube cap with glass solder.

[0095] [Figure 60] 1 is a cross-sectional view of an LED device according to an embodiment of the present invention, in which a light-transmitting member is connected to a metal tube cap with glass solder.

[0096] [Figure 61] 10 is a cross-sectional view of an LED device provided by Example 9 of the present invention, and also a cross-sectional view of an LED device in a method for fabricating an LED device in Example 10 of the present invention.

[0097] [Figure 62] 10 is an overhead view of the substrate and fence member (having a circular outer shape) in an LED device provided by Example 9 of the present invention, and is also an overhead view of the substrate and fence member (having a circular outer shape) in Example 10.

[0098] [Figure 63]10 is an overhead view of the substrate and fence member (with a rectangular outer shape) in an LED device provided by Example 9 of the present invention, and is also an overhead view of the substrate and fence member (with a rectangular outer shape) in Example 10.

[0099] [Figure 64] 10 is a schematic cross-sectional view of an LED device according to Example 9 of the present invention, in which a fence member and a substrate are integrally molded, and also a schematic cross-sectional view of an LED device according to Example 10 of the present invention, in which a fence member and a substrate are integrally molded.

[0100] [Figure 65] This is a schematic cross-sectional view of the fence member and the translucent member in the LED device provided by Example 9 of the present invention, which are integrally molded, and also a schematic cross-sectional view of the fence member and the translucent member in Example 10.

[0101] [Figure 66] 9 is a schematic diagram of a method for manufacturing an LED device according to Example 9 of the present invention and light emitted from a light-emitting element in the LED device is reflected at different included angles α; and FIG. 10 is a schematic diagram of a method for manufacturing an LED device according to Example 10 of the present invention and light emitted from a light-emitting element in the LED device is reflected at different included angles α.

[0102] [Figure 67] 9 is a schematic diagram of a method for manufacturing an LED device according to Example 9 of the present invention, and light emitted from the light-emitting element in the LED device is reflected by fence members with different included angles α; and FIG. 10 is a schematic diagram of a method for manufacturing an LED device according to Example 10 of the present invention, and light emitted from the light-emitting element in the LED device is reflected at different included angles α.

[0103] [Figure 68] 1 is a cross-sectional view of a LED device according to an embodiment of the present invention; FIG.

[0104] [Figure 68a] FIG. 10 is a cross-sectional view of a second packaging method for a reflecting ring in an embodiment.

[0105] [Figure 68b] FIG. 10 is a cross-sectional view of a second packaging method for a reflecting ring in an embodiment.

[0106] [Figure 68c] FIG. 10 is a cross-sectional view of a third packaging method for a reflecting ring in an embodiment.

[0107] [Figure 68d] 1 is a perspective view of a reflecting ring (having a circular outer shape) in an embodiment.

[0108] [Figure 68e] 1 is a top view of a reflecting ring (having a rectangular outer shape) in an embodiment.

[0109] [Figure 69] 1 is a cross-sectional view of an LED device according to an embodiment of the present invention; FIG.

[0110] [Figure 69a] 1 is a top view of an LED device in which the outer shape of a tube cap member is circular in an embodiment.

[0111] [Figure 69b] 1 is a top view of an LED device in which the outer shape of a tube cap member in an embodiment is rectangular.

[0112] [Figure 69c] FIG. 1 is a cross-sectional view of an LED device using a hemispherical lens in an embodiment.

[0113] [Figure 70] 3A and 3B are schematic ray diagrams illustrating a method for fabricating an LED device according to an embodiment of the present invention, and light emitted from a light-emitting element in the LED device is reflected at different included angles α; DETAILED DESCRIPTION OF THE INVENTION

[0114] In order to clarify the objectives, technical means and advantages of the present invention, the present invention will be described in more detail below with reference to the drawings and examples. The specific embodiments described herein are only used to interpret the present invention, and are not used to limit the present invention.

[0115] Terms such as "installed" and "connected" should be understood broadly, and may refer to, for example, being directly installed or connected, or being indirectly installed or connected via an intermediate element, member or structure.

[0116] Furthermore, in the embodiments of the present invention, terms indicating orientation or positional relationships, such as "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," and "outer," are terms based on the orientation or positional relationships shown in the drawings or on the usual arrangement or usage state, and are intended merely for the convenience and ease of explanation of the present invention. They do not indicate or imply that the structures, features, devices, or elements described must have a specific orientation or positional relationship, or that they must be performed with a specific orientation structure and operation. Therefore, they should not be understood as limiting the present invention. In the description of the present invention, unless otherwise specified, the meaning of "plurality" may be understood to mean two or more than two.

[0117] In specific embodiments, the specific technical features and examples described can be combined in any suitable manner as long as they do not conflict with each other, for example, different specific technical features / examples can be combined to form different embodiments, and in order to avoid unnecessary repetition, the present invention will not separately describe various possible combinations of each specific technical feature / example. Example 1:

[0118] As shown in Figures 1 and 3, the present invention includes a substrate 1, a transparent cover 2, and a fence 3 (see Figure 2), the fence 3 is connected to the substrate 1, specifically, the fence 3 is a copper fence, the substrate 1 is a ceramic substrate, an LED chip 6 (UV-LED chip in this embodiment) is connected to the substrate 1, and the fence 3 is surrounded by the transparent cover 2 and the substrate 1 to form a mounting area 7, the transparent cover 2 is a glass lens, and can be made of quartz glass or sapphire glass, the fence 3 includes an outer retaining wall 32 and an inner retaining wall 31, The outer retaining wall 32 and the inner retaining wall 31 are both fences, which can be rectangular or circular. There is a groove 33 between the outer retaining wall 32 and the inner retaining wall 31. The LED chip package structure further includes a sealing member 5 installed in the groove 33. The transparent cover 2 covers the inner retaining wall 31 and the mounting area. The transparent cover 2 is inserted into and connected to the groove 33 and is connected to the sealing member 5. The LED package structure further includes a protective member 4, which is installed on the edge of the transparent cover 2. The protective member 4 is connected to a sealing part 41. The protective member 4 has a contact portion 43, and the sealing portion 41 seals the gap between the transparent cover 2 and the outer retaining wall 32. The contact portion 43 contacts the upper end of the transparent cover 2 and is connected to the sealing portion 41. In a specific application, the protective member 4 is a metal protective member, and metal materials can be used for both. In this embodiment, the protective member 4 and the substrate 1 can be welded (laser welding in this embodiment). The welding connection method is strong and can effectively prevent the glass lens from coming off. In addition, since the metal protective member is installed on the glass lens, it is not directly welded to the substrate 1, but is made of copper. The sealing part 41 is welded to the outer retaining wall 32 of the fence, and seals the gap between the transparent cover 2 and the outer retaining wall 32, preventing the sealing member 5 from being exposed to UV rays. This tightens the bond between the glass lens and the ceramic substrate, enhancing the airtightness. As long as there are no cracks in the weld, the airtightness will be even higher. Even if there are cracks, the airtightness can be guaranteed through the sealing member 5 installed in the groove 33. This provides double protection for airtightness, and while retaining the advantages of the inorganic packaging process, it overcomes its localized nature. Even if the glass lens is cracked during welding or later use, it can still meet the requirements.The installation of the sealing member 5 improves the filling effect of the contact gap between the ceramic substrate and the glass lens, improving the airtightness of the LED package structure. The sealing member 5 also protects against UV radiation through the shielding effect of the inner and outer retaining walls 31 and 32, and the sealing effect of the sealing portion 41 and the abutting portion 43, effectively preventing the glass lens from coming off. This advantage is utilized while overcoming the limitations of the semi-inorganic packaging process. The LED package structure provided by this embodiment of the present invention tightly bonds the transparent cover 2 (glass lens in this embodiment) and the substrate 1 (ceramic substrate in this embodiment), providing good airtightness. This realizes a semi-inorganic packaging process, solving the problem of the transparent cover 2 coming off due to adhesive failure in semi-inorganic packages under long-term UV light exposure. It also combines the advantages of semi-inorganic and all-inorganic packaging, overcoming the limitations of both, ensuring the airtightness of UV-LED products, improving the durability of UV-LED devices, and providing better stability and practical value.

[0119] In a specific application, the substrate 1 is a ceramic substrate, which includes a ceramic layer, an internal circuit 11, an internal conductive hole 12, and a bottom circuit 13, a copper fence is installed on one side of the ceramic layer, and the internal circuit is located inside the inner retaining wall 31, whereby the internal circuit and the bottom circuit are connected by installing the internal conductive hole 12 in the ceramic layer, and the bottom circuit, the internal circuit, and the copper fence are bonded to the ceramic layer through a DPC process (direct plating copper), and the UV-LED chip is located inside the inner retaining wall 31 and connected to the internal circuit 11. In another embodiment, the ceramic substrate further includes a heat dissipation part 14 located at the bottom.

[0120] In some examples of this embodiment, a plurality of the protective members 4 are installed, and some of the plurality of protective members 4 cover the upper surface of the transparent cover 2, and the distance between the end faces of the two opposing abutting portions 43 located on the upper surface of the transparent cover 2 does not exceed the distance between the side walls of the two opposing grooves 33 of the inner retaining wall 31. That is, the recess width of the upper surface of the metal fitting block located on the upper surface of the glass lens does not exceed the distance between the side walls of the inner retaining wall 31 facing the two grooves 33 (i.e., the two inner walls of the inner retaining wall 31). In other examples of this embodiment, four protective members 4 may be installed, and they may be installed at four corners of the transparent cover 2 or at the middle positions of the four sides of the transparent cover 2, and some of them cover the upper surface of the transparent cover 2. In another embodiment, two protective members 4 may be installed, and they are installed symmetrically facing each other on the sides of the transparent cover 2. In other embodiments, the number of protective members 4 may be three, six, or other numbers. The sealing member 5 is hidden between the substrate 1 and the transparent cover 2 (glass lens) of the protective member 4 (metal block fitting). The side portion of the light emitted from the UV chip is blocked by the inner retaining wall 31 of the fence 3 (copper fence). Furthermore, the hollow width of the upper surface of the metal fitting block located on the upper surface of the glass lens does not exceed the distance between the side walls facing the two grooves 33 of the inner retaining wall 31. Therefore, when the external UV light is reflected back, it is blocked by the fitting metal block of the glass lens and the copper fence. This prevents the sealing member from being affected by UV light, further improving reliability and ensuring the airtightness of the UV-LED product.

[0121] In this embodiment, as shown in FIG. 1 and FIG. 3, the sealing member 5 has an inner sealing portion 51, an outer sealing portion 52 and a horizontal sealing portion 53, the transparent cover 2 includes a top cover portion 21 and a vertical portion 22, the vertical portion 22 is connected to the outer periphery of the top cover portion 21, the inner sealing portion 51 is respectively joined to the inner retaining wall 31 and the inside of the transparent cover 2, the outer sealing portion 52 is respectively joined to the outer retaining wall 32 and the outside of the vertical portion 22 of the transparent cover 2, and the horizontal sealing portion 53 is respectively joined to the recess The bottom of the groove 33 is connected to the bottom of the transparent cap 2. One end of the horizontal sealing portion 53 is connected to the outer sealing portion 52, and the other end of the horizontal sealing portion 53 is connected to the inner sealing portion 51. The sealing member has a mounting groove, which is surrounded by the inner sealing portion 51, the outer sealing portion 52, and the horizontal sealing portion 53 to form a mounting groove for mounting the transparent cap 2. That is, both sides of the mounting groove are the inner sealing portion 51 and the outer sealing portion 52, respectively, and the bottom of the mounting groove is the horizontal sealing portion 53. The vertical portion 22 is tightly connected to the inner wall of the mounting groove, eliminating gaps and improving airtightness. In some examples of this embodiment, as shown in FIG. 1A, the upper ends of the inner sealing portion 51 and the inner retaining wall 31 do not coincide. That is, a certain gap is provided between the upper ends of the inner sealing portion 51 and the outer sealing portion 52. The gap is provided in advance according to the characteristics of the material, providing sufficient thermal expansion space for the sealing member 5. 1-b, the width of the sealing member 5 is the same as the width of the vertical portion 22 of the transparent cover 2, i.e., the sealing member 5 only has one horizontal sealing portion 53, resulting in a compact package structure and improved stability. In another example, as shown in FIGS. 1-c and 1-d, at least one side of the vertical portion 22 of the transparent cover 2 is joined to the retaining wall of the fence 3, and the joint between the vertical portion 22 and the retaining wall serves as a positioning point when installing the transparent cover 2, making installation easier. Therefore, as shown in FIG. 1-c, the sealing member only has an outer sealing portion 52 and a horizontal sealing portion 53. Therefore, as shown in FIG. 1-d, the sealing member only has an inner sealing portion 51 and a horizontal sealing portion 53.

[0122] In a specific application, the sealing member 5 is preformed in a mold and then inserted into the groove 33. The transparent cover 2 is then inserted into the groove 33 and abuts against the sealing member 5. Alternatively, the sealing member 5 can be formed by applying a certain amount of fluid adhesive to the bottom of the groove 33. That is, the liquid adhesive is applied, and the transparent cover 2 is then inserted into the groove 33 and then dried and solidified. When the sealing member 5 is formed in this manner, the inner and outer retaining walls 31 and 32 can effectively prevent the adhesive from overflowing into or out of the cup of the substrate 1, preventing the overflowed adhesive from affecting the product parameters and airtightness. Specifically, the sealing member 5 is made of silica gel, epoxy resin, or other packaging adhesive. In conventional packaging processes, the adhesive on the copper fence surface and the overflowed adhesive in the cup of the substrate 1 turn yellow and become ineffective when exposed to UV light for a long time, affecting the product parameters and airtightness. Therefore, the only option is to fill the gaps with a non-fluid material. However, the LED package structure provided by the present invention can fill the gaps using a fluid or non-fluid material (i.e., pre-formed in a mold), overcoming the limitations of filler material selection during the conventional packaging process, improving applicability, and reducing package costs.

[0123] In some examples of this embodiment, the protective member 4 further includes a fixing portion 42, which is connected to the sealing portion 41 and fixedly connected to the outer retaining wall 32. In this embodiment, the fixing portion 42 is integrally connected to the sealing portion 41, the inside of the sealing portion 41 is joined to the vertical portion 22, and the inner retaining wall of the abutting portion 43 is joined to the upper end of the outer cover portion 21, that is, both inner surfaces of the protective member 4 are joined to the transparent cover 2, thereby improving the protective effect. In other examples, the fixing portion 42 partially overlaps the outer retaining wall 32 and partially overlaps the upper end surface of the outer retaining wall 32, thereby supporting the protective member 4 in the vertical direction, making welding easier and stronger. 1-e, the fixing portion 42 partially overlaps the side surface of the outer retaining wall 32 facing the groove 33, and the end surface of the fixing portion 42 abuts the sealing member 5, i.e., the sealing member 5 supports the protective member 4, which facilitates welding. At the same time, the sealing member 5 is compressed and slightly deformed, so that the sealing member 5 can be sufficiently compressed when the protective member 4 is installed, minimizing the installation gap and enhancing the airtightness of the package structure. In another embodiment, a gap is provided between the end surface of the fixing portion 42 and the sealing member 5, so that the abutment portion 43 is sufficiently abutted against the upper surface of the transparent cover 2, preventing the transparent cover 2 from loosening.

[0124] In this embodiment of the present invention, the height of the inner retaining wall 31 does not match the height of the outer retaining wall 32, and the groove 33 located between the inner retaining wall 31 and the outer retaining wall 32 is specifically described in detail in the following two embodiments 1a and 1b.

[0125] Example 1a:

[0126] When the height of the inner retaining wall 31 is defined as a first height and the height of the outer retaining wall 32 is defined as a second height, the first height is higher than the second height. That is, the inner retaining wall 31 is higher than the outer retaining wall 32. As shown in Figures 1 and 2, the groove 33 between the inner retaining wall 31 and the outer retaining wall 32 forms a "J"-shaped (hook-shaped) cross-section with the inner retaining wall 31, the bottom of the groove 33, and the outer retaining wall, or a sealing member 5 is inserted into it. The cross-section of the sealing member 5 can also be "J"-shaped (hook-shaped), the fixed portion 42 is connected to one end of the sealing portion 41, and the abutment portion 43 is connected to the other end of the sealing portion 41, the cross-section of the protective member 4 forms a Z-shape, and the fixed portion 42 is both joined to the upper end of the outer retaining wall 32 and the upper end of the outer sealing portion 52. In this embodiment, the upper end of the outer retaining wall 32 and the upper end of the outer sealing portion 52 are coincident, and the airtightness is improved by sealing the top of the outer retaining wall 32 and the outer sealing portion 52 with a metal protective member.

[0127] Example 1b:

[0128] The height of the inner retaining wall 31 is designated as a first height, and the height of the outer retaining wall 32 is designated as a second height. This is an alternative to the above embodiment, but in this embodiment, the first height is lower than the second height. As shown in Figure 3, the inner retaining wall 31 is lower than the outer retaining wall 32, and the groove 33 is formed between the inner retaining wall 31 and the outer retaining wall 32. The outer side of the sealing portion 41 is connected to the outer retaining wall 32, and the sealing portion 41 is in contact with the outer sealing portion 52. The sum of the heights of the sealing portion 41 and the outer sealing portion 52 is equal to the height of the outer retaining wall 32. The bottom wall of the fixing portion 42 is connected to the upper end of the outer retaining wall 32, and the fixing portion 42 is in contact with the sealing portion 41 and the abutment portion 43, respectively. The cross section of the protective member 4 is T-shaped, improving airtightness.

[0129] The first embodiment of the present invention further provides a packaging method used in the LED package structure, which is used in the above LED package structure, and as shown in FIG. 4, includes the following steps:

[0130] In step S401, a base plate 1 having a fence 3 is manufactured, and an outer retaining wall 32 and an inner retaining wall 31 are installed on the fence 3, with a groove 33 formed between the outer retaining wall 32 and the inner retaining wall 31.

[0131] The substrate 1 is a ceramic substrate, and the fence 3 is a copper fence. The internal circuit 11, external circuit, internal conductive hole 12, and fence 3 are formed on the ceramic substrate using a DPC (Direct Plating Copper) process, which includes laser drilling, vacuum plating, die casting, circuit exposure, circuit development, plating hole filling, polishing, sandblasting, die casting, copper fence fabrication and exposure, copper fence development, copper plated fence, polishing, film removal, copper / titanium removal, electrical measurement, surface treatment, etc. In another embodiment, a heat dissipation part 14 for heat dissipation can be formed at the bottom of the substrate.

[0132] As can be understood, the fence 3 manufactured in the above steps has an outer retaining wall 32 and an inner retaining wall 31 formed thereon, and a groove 33 is formed between the outer retaining wall 32 and the inner retaining wall 31.As can be seen from the above explanation, if the height of the inner retaining wall 31 is defined as the first height and the height of the outer retaining wall 32 is defined as the second height, in some embodiments of this embodiment, the first height is higher than the second height, and in other embodiments, the first height is lower than the second height.

[0133] Specifically, the packaging method further includes a chip eutectic step, in which a welding agent is applied to the internal circuit of the substrate 1 (ceramic substrate), and the LED chip 6 is welded to the area with the welding agent, wherein the welding agent for the LED chip 6 is a gold-tin alloy, and the welding agent acts as a eutectic medium, tightly bonding the LED chip 6 and the substrate 1 when the eutectic occurs, and nickel-gold plating is applied to the ceramic substrate circuit, with the nickel thickness being greater than 3 μm and the gold thickness being greater than 0.05 μm. The packaging method further includes a chip eutectic step, in which the substrate 1 (ceramic substrate) on which the LED chip 6 has been solidified is placed in a eutectic furnace to firmly bond the LED chip 6 and the ceramic substrate, wherein the temperature of the eutectic furnace is at least 300°C to 340°C, and protection is provided by a nitrogen atmosphere during the eutectic process.

[0134] In S402, the sealing member 5 is placed in the groove 33.

[0135] The sealing member 5 is formed in advance using a mold and then fitted into the groove 33. In one example, a certain amount of fluid thermosetting adhesive is directly applied to the bottom of the groove 33 and dried to form the sealing member 5. The fluid adhesive is a liquid adhesive, and the sealing member 5 formed in this manner requires subsequent drying and solidification. The cooperation of the inner retaining wall 31 and the outer retaining wall 32 effectively prevents the adhesive from overflowing into the cup of the substrate 1 or outside the substrate 1, preventing the overflowing adhesive from affecting the product parameters and airtightness. By using a fluid or non-fluid material (i.e., pre-formed in a mold) to fill the gap between the transparent cover 2 and the fence 3, it is possible to overcome the local limitations in the selection of filling materials in the conventional packaging process, improve applicability, and reduce packaging costs.

[0136] In step S403, the transparent cover 2 is placed over the inner retaining wall 31 and the mounting area 7, and is inserted into the groove 33 and abuts against the sealing member 5.

[0137] As can be seen from the above description, in one embodiment, the transparent cover 2 includes a top cover portion 21 and a vertical portion 22 connected to the outer periphery of the top cover portion 21, and in order to improve the airtightness of the package structure, the sealing member 5 is filled into the gap between the transparent cover 2 and the fence 3 through the above steps.

[0138] In step S404, the protective member 4 is installed on the edge of the transparent cover 2, and the sealing portion 41 of the protective member 4 covers the space between the transparent cover 2 and the outer retaining wall 32, and the abutment portion 43 is abutted against the upper end of the transparent cover 2, thereby fixedly connecting the protective member 4 to the outer retaining wall 32.

[0139] In one embodiment, the abutment portion 43 of the protective member 4 covers the upper surface of the transparent cover 2 and is positioned on the upper surface of the transparent cover 2, and the distance between the two opposing abutment portions 43 does not exceed the distance between the side walls of the two opposing grooves 33 of the inner retaining wall 31. Through the above step, the sealing member 5 is prevented from being exposed to UV light under the shielding of the inner retaining wall 31 and the outer retaining wall 32 and under the sealing action of the sealing portion 41 and the abutment portion 43, thereby improving the reliability of the package structure and ensuring the airtightness of the UV-LED product.

[0140] As can be seen from the above description, in some examples, the protective member 4 can be installed in the fixing portion 42, and the fixing portion 42 can be fixedly connected to the outer retaining wall 32 to tightly bond the transparent cover 2 (glass lens) and the ceramic substrate. In this embodiment, the protective member 4 is a metal protective member, and the fixing portion 42 is integrally connected to the sealing portion 41, both of which are made of metal. In this embodiment, the fixing portion 42 and the substrate 1 can be laser welded. Using a welding connection method makes it very strong and effectively prevents the glass from peeling off. In some examples, the fixing portion 42 of the protective member 4 is installed on the upper end surface of the outer retaining wall 32, with some overlapping, so that the protective member 4 has vertical support, making welding convenient and strong.

[0141] In another example, the fixing portion 42 of the protective member 4 can be installed within the groove 33, so that the fixing portion 42 and the outer retaining wall 32 overlap at a portion of the side facing the groove 33, and the sealing member 5 can be compressed when the protective member 4 is installed. The compression of the sealing member 5 will cause a slight deformation, thereby minimizing the installation gap and enhancing the airtightness of the package structure. In another embodiment, when the protective member 4 is installed, the abutment portion 43 is sufficiently abutted against the upper surface of the transparent cover 2, leaving a gap between the protective member 4 and the sealing member 5 to prevent the transparent cover 2 from loosening.

[0142] The LED package structure provided by the first embodiment of the present invention includes a fence 3 on the substrate 1, the fence 3 having an outer retaining wall 32 and an inner retaining wall 31, a groove 33 between the outer retaining wall 32 and the inner retaining wall 31, a sealing member 5 can be installed in the groove 33, the transparent cover 2 covers the inner retaining wall 31 and the mounting area 7, and the transparent cover 2 is inserted into the groove 33 and contacts the sealing member 5, the protective member 4 is installed on the edge of the transparent cover 2, and the sealing portion 41 of the protective member 4 seals the gap between the transparent cover 2 and the outer retaining wall 32, and the abutting portion 43 and the When the upper end of the transparent cover 2 is abutted, and under the shielding of the inner retaining wall 31 and the outer retaining wall 32, and the sealing part 41 and the abutting part 43, the sealing member can avoid exposure to UV light, tightly bonding the transparent cover 2 to the substrate 1, improving airtightness, and realizing semi-inorganic packaging and all-inorganic packaging processes, solving the problem of the transparent cover 2 falling off due to the adhesive failure in the semi-inorganic package under long-term exposure to UV light, and combining the advantages of both semi-inorganic packaging and all-inorganic packaging, it guarantees the airtightness of UV-LED products, improves the durability and stability of UV-LED equipment. Example 2:

[0143] As shown in Figures 8 and 9, the all-inorganic LED package structure provided by the embodiment of the present invention includes a package substrate 100 (substrate), an LED chip 200, and a light-transmitting housing 300 (transparent cover). The package substrate 100 (substrate) has a front surface 101 and a back surface 102 facing each other. A first circuit layer 110 is installed on the front surface 101 of the package substrate 100 (substrate). The first circuit layer 110 includes a first circuit pattern 111 and a welding plate 112, and the welding plate 112 is used to weld the LED chip 200. A welding layer 350 is provided on the bottom of the translucent housing 300 (transparent cover), and the welding layer 350 is welded to the first circuit pattern 111. A sealed package cavity is formed between the translucent housing 300 (transparent cover) and the package substrate 100 (substrate). The LED chip 200 is installed in the package cavity and welded to the welding plate 112. The top and side surfaces of the translucent housing 300 are both transparent to light. The welding layer 350 provided on the bottom of the translucent housing 300 (transparent cover) can be tightly and firmly bonded to the package substrate 100 (substrate). The package structure in this embodiment is made of silica gel, silicone resin, or epoxy resin. This allows for an all-inorganic packaging process without using organic materials such as cellulose acetate, PEG, or PEG-1. This eliminates the risk of adhesives turning yellow or falling off, which occurs in organic or semi-inorganic packaging. At the same time, since both the sides and the front of the translucent housing 300 (transparent lid) are translucent, even if the translucent housing 300 (transparent lid) has four sides, the above package structure can achieve five-sided light emission (when the translucent housing 300 is rectangular). This not only significantly improves the luminous efficiency of the UV-LED package, but also improves its reliability. Furthermore, because no organic materials are used, it overcomes the drawback that organic materials turn yellow and lose their viscosity when exposed to UN light with a wavelength of less than 350 nm.The all-inorganic LED package structure provided by this embodiment has obvious advantages in UV-LED products with a wavelength peak value of 350 nm or less. The translucent housing 300 (transparent lid) can be made of inorganic glass material, and a welding layer 350 is provided at the bottom to weld the translucent housing 300 (transparent lid) to the package substrate 100, thereby achieving a tight bond and avoiding the risk of yellowing and falling off, thereby improving product reliability and user experience.

[0144] Specifically, the light-transmitting housing 300 (transparent lid) may be a glass lens, the welding layer 350 may be a metal layer (metal welding agent) formed on the bottom of the light-transmitting housing 300 (transparent lid) by plating, and the first circuit pattern 111 may be a metal layer formed on the front surface 101 of the package substrate 100 by plating, thereby reducing manufacturing costs. In another embodiment, the welding layer 350 may also be a glass welding agent formed on the bottom of the light-transmitting housing 300 (transparent lid), and the first circuit pattern 111 may be a metal layer formed on the front surface 101 of the package substrate 100 by plating. By welding the light-transmitting housing 300 to the first circuit pattern using a glass welding agent and metal sealing technology, light transmittance is improved and the light-blocking effect of the welding layer 350 on the LED chip is reduced. The welding layer 350 may cover the bottom surface of the light-transmitting housing 300 (transparent lid), and of course, the welding layer 350 may extend to a predetermined distance on the inner and outer surfaces of the light-transmitting housing 300 (transparent lid). In this embodiment, the first circuit pattern is used for welding the light-transmitting housing 300 (transparent cover) and is not used for electrical conductivity.

[0145] Specifically, the transparent housing 300 (transparent cover) covers the top and sides of the LED chip, and both the top and sides can emit light, resulting in a good lighting effect. In this embodiment, the transparent housing 300 (transparent cover) has a top light-emitting surface and four side light-emitting surfaces, and the outer shape of the transparent housing 300 (transparent cover) can be rectangular (quadrilateral), achieving a five-sided lighting effect.

[0146] Specifically, the package substrate 100 (substrate) can be a ceramic substrate, which has good reliability and low application cost.

[0147] Specifically, the metal layer (welding layer 350) can be a eutectic metal layer, or the metal layer can be a non-eutectic metal layer. If the metal layer is a eutectic metal layer, the metal layer and the first circuit pattern 111 can be joined using a process such as eutectic welding, and the welding reliability is high. If the metal layer is a non-eutectic metal layer, the light-transmitting housing 300 (transparent cover) and the package substrate 100 (ceramic substrate) can be tightly bonded using reflux welding or high-temperature drying, thereby achieving an all-inorganic packaging process. Even when the all-inorganic LED package structure is used in UV-LED products, there is no risk of the glass lens falling off.

[0148] Specifically, the metal layer can be a gold-tin alloy layer or a silver layer, which has high reliability and good welding effect with the first circuit pattern 111 .

[0149] Specifically, the light-transmitting housing 300 (transparent cover) may be a quartz glass housing or a sapphire glass housing, which has good light transmittance. The outer shape of the light-transmitting housing 300 may be rectangular or circular, and the front surface may be flat or spherical.

[0150] Specifically, the first circuit pattern 111 is a metal layer formed on the front surface of the package substrate 100 (substrate) by plating, which is easy to manufacture.

[0151] Specifically, the first circuit pattern 111 has a closed shape, and the welding layer 350 contacts the first circuit pattern 111 to form a closed welding area, the first circuit pattern 111 has a rectangular ring shape, the outer shape of the light-transmitting housing 300 (transparent lid) can be rectangular, the bottom surface of the light-transmitting housing 300 (transparent lid) has a corresponding rectangular ring shape, and the welding layer 350 on the bottom edge of the light-transmitting housing 300 (transparent lid) is located exactly on the first circuit pattern 111. The bottom edge of the light-transmitting housing 300 (transparent lid) can be located completely above the first circuit pattern 111, that is, the bottom edge of the light-transmitting housing 300 (transparent lid) is located in the projection area of ​​the front surface 101 of the package substrate 100 (substrate) and is completely within the range of the first circuit pattern 111.

[0152] Alternatively, the first circuit pattern 111 may have a semi-closed shape, and the welding layer 350 may contact the first circuit pattern 111 to form a semi-closed welding area.

[0153] Specifically, the welding layer 350 is also a glass welding material formed on the bottom of the light-transmitting housing 300, and can be connected to the glass welding material by metal sealing technology, resulting in high product reliability.

[0154] Specifically, the vertical cross section of the light-transmitting housing 300 (transparent cover) may be an "n" shape, and the light-transmitting housing 300 (transparent cover) may be configured to emit light from five sides. Of course, the outer shape of the light-transmitting housing 300 may also be polygonal, rounded (see FIG. 9), etc.

[0155] Specifically, the height of the bottom of the translucent housing 300 (transparent cover) can be made equal to or lower than the bottom of the LED chip 200, so that the welding layer 350 at the bottom of the translucent housing 300 (transparent cover) does not block the light from the LED chip 200, thereby further improving the light effect.

[0156] Specifically, a second circuit layer 120 is installed on at least one of the rear surface 102 and the interior of the package substrate 100 (substrate), and the welding plate 112 is connected to the second circuit layer 120 through conductive holes (filled with conductive material 130) installed in the package substrate 100 (substrate), thereby satisfying the circuit wiring requirements. In this embodiment, the second circuit layer 120 is installed on the rear surface 102 of the package substrate 100 (substrate), and the package substrate 100 is manufactured using a DPC (Direct Plating Copper) process using a ceramic substrate, with circuits on both the front and rear surfaces, and the welding plate 112 of the front circuit (first circuit layer 110) and the rear circuit (second circuit layer 120) are connected by internal conductive holes.

[0157] In this embodiment, the LED chip 200 can be a flip chip, and the electrodes of the flip chip can be a gold-tin alloy or the like.

[0158] The present invention further provides an all-inorganic LED packaging method, which is used to package the above all-inorganic LED packaging structure, and includes the following steps:

[0159] This is a step of manufacturing the LED chip 200, the package substrate 100 (substrate) having the first circuit pattern 111 and the welding plate 112 on the front side, and the light-transmitting housing 300 having the welding layer 350 on the bottom side.

[0160] The LED chip 200 is placed on the front surface 101 of the package substrate 100 and welded to the welding disk 112, which is an LED chip welding step.

[0161] and a fixing step of the light-transmitting housing, which includes covering the LED chip 200 with the light-transmitting housing 300, placing the welding layer 350 at the bottom of the light-transmitting housing 300 on the first circuit pattern 111, and connecting the welding layer 350 and the first circuit pattern 111 by welding or drying process.

[0162] Specifically, the welding disk 112 is a metal-tin alloy, and the first circuit pattern 111 can be plated with nickel and gold, where the thickness of the nickel layer is greater than 3 μm and the thickness of the gold layer is greater than 0.05 μm.

[0163] In this embodiment, the LED chip 200 welding step includes a die bonding step and a eutectic step.

[0164] Specifically, the die bonding step of the chip includes a step of placing a welding agent acting as a eutectic medium on the front surface 101 of the package substrate 100 (substrate) and fixing the LED chip 200 to the front surface 101 of the package substrate 100 (substrate) where the welding agent is located.

[0165] Specifically, the eutectic step includes a step of performing eutectic welding on the LED chip 200 together with the package substrate 100 (substrate) in a eutectic furnace, and the temperature of the eutectic furnace has at least one temperature range, the temperature being 300°C to 340°C, and the eutectic furnace uses a nitrogen atmosphere in the eutectic.

[0166] Specifically, the fixing of the light-transmitting housing includes installing solder on the first circuit layer 110 and covering the light-transmitting housing 300 on the first circuit pattern 111 of the first circuit layer 110 .

[0167] In a specific application, the welding layer 350 can be a gold-tin alloy, and is fixed to the first circuit pattern 111 by using a eutectic welding process with solder as the welding additive.

[0168] Alternatively, the welding layer 350 can be a gold-tin alloy, and is fixed to the first circuit pattern 111 by a high-temperature drying process or a reflux welding process using silver paste or solder paste.

[0169] Alternatively, the welding layer 350 can be made of a non-eutectic metal, and is fixed to the first circuit pattern 111 using silver paste or solder paste through a high temperature drying process or a reflux welding process.

[0170] Specifically, the peak wavelength of the LED chip 200 is less than 350 nm.

[0171] In specific applications, the all-inorganic LED packaging method can refer to the following steps:

[0172] LED chip welding step (chip die bonding step): The circuit (including at least the first circuit layer 110) of the package substrate 100 (substrate, in this embodiment a ceramic substrate) is plated with a nickel-gold alloy, with the nickel plating thickness being greater than 3 μm and the gold plating thickness being greater than 0.05 μm. A welding aid is applied to the first circuit layer 110 on the front surface 101 of the package substrate 100 (substrate). The LED chip 200 is positioned on the welding aid, and the electrodes are aligned with the welding disk 112 (the welding disk 112 is a gold-tin alloy) to secure the LED chip 200 to the package substrate 100. If a eutectic welding method is used, the welding aid can be a eutectic medium, which can tightly bond the LED chip 200 and the welding disk 112.

[0173] Eutectic welding step: The package substrate 100 (substrate) on which the LED chip 200 is fixed is subjected to eutectic welding in a eutectic furnace to firmly bond the LED chip 200 to the package substrate 100 (substrate). The temperature of the eutectic furnace has at least one temperature range, which is 300°C to 340°C, and the welding is protected by an atmosphere (inert gas such as nitrogen) during the eutectic welding, so that the welding quality is better.

[0174] Covering the glass lens: Solder is applied to the first circuit layer 110 on the surface of the package substrate 100 where it will contact the glass lens (translucent housing 300), and the glass lens covers the surface of the package substrate 100 (substrate).

[0175] Welding stage: The ceramic substrate covered with the glass lens is tightly bonded to the ceramic substrate through a eutectic furnace, reflux welding, or high-temperature drying. (If the metal at the bottom of the glass lens is a gold-tin alloy, it can be welded using the eutectic process, with solder as the welding aid. High-temperature drying or reflux welding can also be used for welding, with silver paste or solder paste being used. If the plated metal at the bottom of the glass lens is silver or another metal that cannot form a eutectic, high-temperature drying or reflux welding can be used for welding, with silver paste or solder paste being used.)

[0176] The all-inorganic LED package structure provided by this embodiment of the present invention does not use organic materials such as silica gel, silicone resin, or epoxy resin, and can therefore use an all-inorganic packaging process, eliminating the risk of adhesives turning yellow or lenses falling off in organic or semi-inorganic packages. At the same time, both the sides and front of the translucent housing 300 can emit light. Therefore, if the translucent housing 300 has four sides, the package structure can achieve five-sided emission (if the translucent housing 300 is rectangular). This not only significantly improves the luminous efficiency of the UV-LED package, but also its reliability. The absence of organic materials avoids the drawbacks of organic materials turning yellow and losing viscosity when exposed to UV light with a wavelength of 350 nm or less. The LED package structure provided by this embodiment has clear advantages over UV products with a peak wavelength of 350 nm or less. The translucent housing 300 (transparent cover) can be made of inorganic materials, eliminating the risk of yellowing and lens falling off, resulting in high product reliability and a good user experience.

[0177] Example 3 includes Example 3a and Example 3b.

[0178] Example 3a:

[0179] 10 and 11, an LED package structure 100 provided by the present invention includes a substrate 10, an LED chip 20, a support 30 (fence), a positioning block 40, a transparent member 50 (transparent cover), and an encapsulant 60. Specifically, the substrate 10 has a front and a back surface facing each other, and the LED chip 20 is fixed to the front surface of the substrate 10. The support 30 (fence) is ring-shaped and has an inner wall, a top, and a bottom. The bottom of the support 30 (fence) is placed on the front surface of the substrate 10, and the support 30 (fence) surrounds the LED chip 20. The inner side of the support 30 (fence) is the side of the support 30 that faces the LED chip 20, and at least a portion of the inner wall of the support 30 (fence) above the LED chip is provided with a mounting groove 31 that penetrates the top of the support 30 (fence), and the positioning block 40 is installed in the mounting groove 31. The translucent member 50 (transparent lid) is installed in the mounting groove 31, and the bottom surface of the translucent member 50 (transparent lid) abuts against the groove bottom surface 311 of the mounting groove 31 and faces the LED chip 20. The side surface 51 of the translucent member 50 abuts against the multiple positioning blocks 40, thereby realizing positioning relative to the abutment member 50 (transparent lid). The side surface 51 of the translucent member 50 forms a sealing groove (not shown) together with the groove bottom surface 311 and groove side walls 312 of the mounting groove 31. The sealant 60 is installed in the sealing groove from the upper opening of the sealing groove and does not cover the translucent member 50. That is, the sealant 60 is disposed between the side surface 51 of the transparent member 50 and the groove bottom surface 311 and groove side surface of the mounting groove 31. Therefore, when measuring the thickness of the sealant 60, the height of the sealing groove is first measured, then the distance between the sealant 60 and the groove top is measured, and finally, the amount of sealant contained in the sealing groove can be obtained through a simple calculation. The thickness of the sealant 60 can be measured by measuring the height of the transparent member 50 (transparent cover) immersed in the sealant 60 or by inserting it into the unsolidified sealant 60 to measure the depth of the sealant 60. This makes measurement very convenient and also allows the amount of sealant contained in the sealing groove to be accurately calculated, thereby ensuring the sealing effect of the sealant and improving product consistency.Therefore, by first installing the sealant and then installing the transparent member on the support base in the prior art, the sealant is installed in the sealed space in the LED structure, which avoids the problem of making it difficult to measure the sealant thickness. In addition, this installation eliminates the need to install a bottom sealant on the transparent member 50 (transparent cover) and the groove bottom surface 311 of the mounting groove 31, and the transparent member 50 (transparent cover) does not receive an upward buoyancy force from the bottom sealant against the transparent member 50 (transparent cover), thereby avoiding upward pressure on the transparent member 50 due to its own repulsive force. This avoids the problem of a sealed space being formed as soon as the bottom sealant and the translucent member 50 (transparent lid) come into contact with each other, and further avoids the problem in the prior art of the translucent member 50 (transparent lid) floating up due to an increase in air pressure inside the sealed space caused by air compression inside the sealed space. This avoids the problem in the prior art of the translucent member 50 (transparent lid) floating up and causing bubbles and pores in the sealant 60 when the sealant 60 is placed between the bottom surface of the translucent member 50 (transparent lid) and the groove bottom surface 311 of the mounting groove 31, and further improves the sealing effect of the LED package structure 100.

[0180] In one embodiment, a first circuit layer 11 is disposed on the front surface of the substrate 10 , and the LED chip 20 is connected to the first circuit layer 11 .

[0181] In one embodiment, the LED chip 20 can be a flip chip, a normal chip, or a vertical chip. A welding agent is placed on the first circuit layer 11 on the front side of the substrate 10, and the LED chip is then placed on the welding agent to connect the LED chip 20 to the substrate 10.

[0182] In one embodiment, the substrate 10 has a second circuit layer 12 on the back surface thereof, and a conductive hole 13 penetrating the front and back surfaces of the substrate 10. The first circuit layer 11 and the base are connected to the second circuit layer 12 through the conductive hole 13, thereby realizing a connection between the LED chip 20 and the first circuit layer 11 and the second circuit layer 12.

[0183] In a specific application, the first circuit layer 11 and the second circuit layer 12 can be formed on the substrate 10 using a DPC (Direct Plating Copper) process.

[0184] Preferably, the substrate 10 is integrally formed with the support 30 (fence), which makes manufacturing very convenient.

[0185] Preferably, the bottom of the transparent member 50 (transparent cover) is placed on the groove bottom surface 311 of the mounting groove 31, and the top of the transparent member 50 is higher than the height of the positioning block 40, so that the positioning block 40 can avoid blocking the sealant 60 at a certain position between the transparent member 50 and the groove side wall 312 of the mounting groove 31, and ensure that the sealant 60 can bond between the transparent member 50 and the support base 30 (fence), thereby ensuring the adhesion and sealing effect of the sealant 60.

[0186] In one embodiment, the light-transmitting member 50 (transparent cover) is made of quartz or sapphire, but the present invention does not limit the specific material of the light-transmitting member 50 as long as it has a light-transmitting effect. For example, the light-transmitting member 50 can be made of plastic such as PMMA (polymethyl methacrylate). In this embodiment, the light-transmitting member 50 can be square (see FIGS. 10 and 11) or hemispherical (see FIGS. 12 and 13). However, the shape of the light-transmitting member 50 is not limited thereto and can be any shape that does not affect light transmission, such as a rectangle or a bulb shape.

[0187] Preferably, the positioning blocks 40 are arranged at equal intervals along the circumferential direction of the sealing groove, so as to more accurately position the transparent member 50 (transparent cover), to better form the sealing groove, and to enhance the sealing effect of the LED package structure 100.

[0188] In one embodiment, as shown in Figures 10 and 11, the support base 30 (fence) is hollow rectangular, the transparent member 50 is square, and can be laid flat in the mounting groove 31. The number of positioning blocks can be four, and the first sides of the four positioning blocks 40 are all abutted against the support base 30 (fence) and are installed equidistantly along the circumferential direction of the groove side wall 312 of the mounting groove 31. That is, the four positioning blocks 40 can be installed at the midpoints of the four sides of the mounting groove 31, respectively. In one embodiment, as shown in Figures 12 and 13, the support base 30 (fence) is hollow and circular, and the transparent member 50 is hemispherical and is mounted in the mounting groove 31. The number of positioning blocks can be three, and the first sides of the three positioning blocks 40 all abut against the support base 30 (fence). The three positioning blocks 40 are installed equidistantly around the central axis of the support base 30, and the angles formed by the connection between every two positioning blocks 40 and the central axis of the support base 30 (fence) are all 120°.

[0189] Preferably, the bottom of the positioning block 40 is placed on the groove bottom surface 311 of the mounting groove 31, the positioning block 40 has a first side surface (not shown) and a second side surface (not shown) facing each other, the first side surface of the positioning block 40 abuts the groove side wall 312 of the mounting groove 31, the outer periphery of the transparent member 50 abuts the second side surface of the positioning block 40, the height of the positioning block 40 is lower than the top of the mounting groove 31, and the sealant 60 covers the top of the positioning block 40 to prevent the positioning block 40 from blocking the sealant 60 at a certain position between the transparent member 50 and the groove side wall 312 of the mounting groove 31. This ensures that the transparent member 50 and the support 30 can be connected through the sealant 60, and ensures the adhesion and sealing effect of the sealant 60.

[0190] In one embodiment, the support base 30 (fence) has a plurality of positioning grooves (not shown) facing the mounting groove 31, and the plurality of positioning grooves are used to accommodate the positioning block 40, facilitating positioning of the positioning block 40. The connection method between the positioning block 40 and the support base 30 of the present invention is not limited to this, and it is sufficient if the positioning block 40 can be installed on the support base 30 (fence). For example, it is understood that the positioning block 40 and the support base 30 may be integrally formed.

[0191] Specifically, the height of the sealant 60 is higher than that of the positioning block 40, and the sealant 60 covers the positioning block 40, thereby preventing the positioning block 40 from blocking the sealant 60 at a position between the transparent member 50 and the groove side wall 312 of the mounting groove 31. This ensures that the transparent member 50 and the support base 30 can be connected through the sealant 60, and ensures the adhesive bonding and sealing effect of the sealant 60.

[0192] It should be noted that, under the condition that the positioning blocks 40 can restrict the position of the transparent member 50, the fewer the number of the positioning blocks 40, the better. This is because, as the number of the positioning blocks 40 is reduced, the volume occupied by the positioning blocks 40 in the mounting groove 31 is reduced, and the volume of the sealing groove is increased, allowing more sealant 60 to be applied, and the bonding area between the transparent member 50 and the support base 30 (fence) is increased, thereby improving the sealing effect of the LED package structure 100. In a specific application, as shown in FIGS. 10 and 11 , when the transparent member 50 is square and placed flat in the mounting groove 31, the number of positioning blocks 40 can be four, and the four positioning blocks 40 are respectively installed at the midpoints of the four sides of the transparent member 50. As shown in FIGS. 12 and 13 , when the transparent member 50 is hemispherical and placed in the mounting groove 31, the number of positioning blocks 40 can be three, and the three positioning blocks 40 are respectively installed at equal distances along the circumference of the transparent member 50.

[0193] It should be noted that, under the condition that the positioning block 40 can restrict the position of the transparent member 50, the smaller the size of the positioning block 40, the better. This is because, as the volume of the positioning block 40 becomes smaller, the volume of the mounting groove 31 occupied by the positioning blocks 40 becomes smaller, and the volume of the sealing groove becomes larger, which increases the amount of sealant 60 that can be applied, and further increases the adhesive bonding area between the transparent member 50 and the support base 30 (fence), thereby improving the sealing effect of the LED package structure 100.

[0194] Although the number and size of the positioning blocks 40 are limited in this embodiment, it is understood that the present invention does not limit the number and size of the positioning blocks 40, as long as the transparent member 50 (transparent cover) and the support base 30 (fence) can still be bonded together through the sealant 60. For example, if there are enough positioning blocks 40 to form a stepped shape around the mounting groove 31, the side surface 51 of the transparent member 50, the top surface of the positioning blocks 40, the groove bottom surface 311 of the mounting groove 31, and the groove sidewall 312 of the mounting groove 31 form a new sealing groove. In this case, the multiple positioning blocks 40 can still limit the thickness of the sealant 60 between the transparent member 50 (transparent cover) and each position of the sealing groove. The side sealing method still prevents the sealant 60 from applying upward pressure to the transparent member 50 (transparent cover), thereby avoiding the problem of bubbles and pores in the sealant 60 when the transparent member 50 rises.

[0195] Example 3b:

[0196] As shown in FIG. 14, the LED packaging method provided by the embodiment of the present invention is used to package the above-mentioned LED package structure 100, and as shown in FIG. 10 and FIG. 11, the LED packaging method includes the following steps:

[0197] In step S101, the substrate 10 is manufactured.

[0198] In step S102, a support 30 (fence) having a mounting groove 31 is installed on the substrate 10, and the support 30 is placed in front of the substrate 10. The support 30 is ring-shaped, and a space for mounting the LED chip 20 is formed in the center of the ring-shaped support 30. A positioning block 40 is installed in the mounting groove 31.

[0199] In step S103, the LED chip 20 is installed on the front surface of the substrate 10 and positioned in the central space of the support 30 (fence).

[0200] In step S104, the bottom and side surfaces of the light-transmitting member 50 (transparent cover) are respectively brought into contact with the groove bottom surface 311 of the mounting groove 31 and the positioning block 40, so that the side surface 51 of the light-transmitting member 50 and the groove bottom surface 311 and groove side wall 312 of the mounting groove 31 form a sealing groove.

[0201] Step S105 includes placing a sealant 60 in the sealing groove.

[0202] Specifically, in one embodiment, the support 30 (fence) is first formed into a ring shape, and then a mounting groove 31 is formed on at least a portion of the inner wall of the support 30 (fence) that penetrates the top of the support 30 (fence). The top of the substrate 10 is then connected to the bottom of the support 30 (fence). In another embodiment, the top of the substrate 10 and the bottom of the support 30 (fence) can be integrally formed (using direct copper plating technology), greatly simplifying manufacturing. A space for mounting the LED chip 20 is formed in the center of the support 30 (fence), and the mounting groove 31 is used to mount the translucent member 50 (transparent cover). The mounting groove 31 is positioned above the LED chip 20 to prevent interference between the translucent member 50 (transparent cover) and the LED chip 20.

[0203] Specifically, the method of installing the positioning block 40 in the mounting groove 31 of the support base 30 (fence) can be to first install a positioning groove within the mounting groove 31 and then install the positioning block 40 in the positioning groove. The positioning block 40 can also be installed directly by directly molding the positioning block 40 and the support base 30 (fence) together when manufacturing the support base 30 (fence). However, it is sufficient that the positioning block 40 can achieve a positioning effect for the translucent member 50 (transparent cover). It is understood that the installation method of the positioning groove and the positioning block 40 can be realized by artificial or mechanical structures, etc. For example, a smart manipulator can be installed to accurately install the positioning groove or positioning block 40 and accurately position the translucent member 50 (transparent cover), thereby further improving the sealing effect.

[0204] Preferably, a plurality of positioning blocks 40 are installed in the mounting groove 31 of the support 30 (fence) to realize the positioning of the translucent member 50 (transparent cover) in the mounting groove 31, and further, when the sealant 60 is installed, the thickness of the sealant 60 between the side surface 51 of the translucent member 50 (transparent cover) and the groove sidewall 312 of the mounting groove 31 can be controlled. When a plurality of positioning blocks 40 are installed at equal distances along the circumferential direction of the sealing groove, the positioning of the translucent member 50 is more accurate, the formation of the sealing groove is improved, and the sealing effect of the LED package structure 100 is enhanced.

[0205] Preferably, when manufacturing the support base 30 (fence) and the positioning block 40 and installing the sealant 60, the height of the positioning block 40 can be made lower than the top of the mounting groove 31 and the transparent member 50 (transparent cover), so that the sealant 60 covers the positioning block 40, and the height of the sealant 60 is made higher than the height of the positioning block 40, so that the positioning block 40 does not block the sealant 60 at a certain position between the transparent member 50 (transparent cover) and the groove side wall 312 of the mounting groove 31, and ensures that the sealant 60 can connect between the transparent member 50 (transparent cover) and the support base 30 (fence), and ensures the adhesion and sealing effect of the sealant 60.

[0206] Specifically, when the sealant 60 is installed between the side surface 51 of the translucent member 50 (transparent lid) and the sealing groove formed by the groove bottom surface 311 and groove sidewall 312 of the mounting groove 31, the translucent member 50 (transparent lid) is not subjected to the upward buoyancy force exerted by the sealant 60 on the translucent member 50 (transparent lid) and the upward pressure on the translucent member 50 (transparent lid) generated by the sealant 60's own repulsive force. This avoids the problem of bubbles and pores being generated in the sealant 60 due to the translucent member 50 (transparent lid) floating up when the sealant 60 is installed between the bottom surface of the translucent member 50 (transparent lid) and the groove bottom surface 311 of the mounting groove 31 in the prior art, and enhances the sealing effect of the LED package structure 100.

[0207] The sealant 60 is an adhesive with a bonding function, and it is understood that there are no limitations on the specific material of the sealant 60. Specifically, to ensure a sealing effect, the sealant 60 can be evenly applied within the sealing groove, and when the transparent member 50 descends to the bottom of the mounting groove 31, the internal air pressure increases, preventing leakage from weak points in the sealant 60. The method of disposing the sealant 60 within the sealing groove can be achieved by artificial or mechanical structures. For example, it is understood that a smart manipulator can be installed to evenly dispense the sealant 60 in a fixed amount, further improving the sealing effect.

[0208] In the best mode of this embodiment, as shown in FIG. 15, the substrate fabrication includes the following steps:

[0209] In step S1011, a ceramic substrate having a front surface and a back surface is prepared.

[0210] Step S1012 includes forming conductive holes through the front and rear surfaces of the substrate, and respectively installing a first circuit and a second circuit on the front and rear surfaces of the ceramic substrate through the conductive holes.

[0211] In the best mode of this embodiment, the step of installing the LED chip 20 on the front surface of the substrate 10 further includes the following steps, as shown in FIG.

[0212] In step S1031, a welding aid is placed on the front surface of the substrate 10.

[0213] In step S1032, the LED chip 20 is placed on the welding additive material.

[0214] Step S1033 includes eutecticizing the LED chip 20 and the substrate 10.

[0215] Specifically, a first circuit layer 11 is placed on the front surface of the substrate 10, the first circuit layer 11 is placed in a first welding plate, a welding additive is placed on the first welding plate, and then the LED chip 20 is placed on the welding additive, thereby achieving an electrical connection between the LED chip 20 and the first circuit layer 11. Usually, the first welding plate is formed at the same time as the first circuit layer 11 is fabricated. The placement of the welding additive causes the LED chip 20 and the substrate 10 to form a eutectic, thereby further strengthening the connection between the LED chip 20 and the substrate 10.

[0216] In the step of placing the first circuit layer 11, which is provided with a welding additive, on the front surface of the substrate 10, the first circuit layer 11 can be placed on the substrate 10 using a DPC (Direct Plating Copper) process. The same process is used to place the second circuit layer 12 on the back surface of the substrate 10, and conductive holes 13 are formed through the substrate 10 to connect the first circuit layer 11 and the second circuit layer 12 through the conductive holes 13, thereby connecting the LED chip 20 and the first and second circuit layers 11 and 12. The welding additive can be applied to the first circuit layer 11 using a spot application method. It is understood that spot application of the welding additive to the first circuit layer 11 can be achieved by artificial or mechanical methods. For example, a smart manipulator can be installed to uniformly apply the welding additive in a fixed amount, further improving the welding effect.

[0217] In specific applications, the first circuit layer 11 and the second circuit layer 12 are plated with nickel and gold to prevent the metal on the circuit from migrating or oxidizing and to improve the electrical conductivity and anti-oxidation performance, where the nickel plating thickness is greater than 3 μm and the gold plating thickness is greater than 0.05 μm, which ensures the electrical conductivity and anti-oxidation effects.

[0218] In one embodiment, the LED chip 20 is one of flip chips, normal chips, or vertical chips, and a welding agent is placed on the first circuit on the front side of the substrate 10, and then the LED chip is placed on the welding agent to connect the LED chip 20 to the substrate 10.

[0219] The eutectic method between the LED chip 20 and the substrate 10 can be performed by placing the connected LED chip 20 and substrate 10 in a eutectic furnace, which makes the bonding between the LED chip 20 and the substrate 10 stronger. In a specific application, when the welding disk is made of a gold-tin alloy, the temperature of the eutectic furnace has at least one temperature range, which is 300°C to 340°C, and the eutectic is protected by a nitrogen atmosphere.

[0220] In the best mode of this embodiment, the step of placing the sealant 60 in the sealing groove, as shown in FIG. 17, further includes the following steps:

[0221] In step S1051, the unsolidified sealant 60 is placed in the sealing groove, and the unsolidified sealant 60 covers the positioning block 40.

[0222] Step S1052 includes allowing the sealant 60 to solidify.

[0223] The unsolidified sealant 60 is covered on the positioning block 40 to prevent the positioning block 40 from blocking the sealant 60 at a certain position between the transparent member 50 (transparent cover) and the support base 30 (fence), ensuring that the transparent member 50 (transparent cover) and the support base 30 (fence) are connected by the sealant 60, thereby ensuring the bonding and sealing effect.

[0224] Specifically, the solidification method of the sealant 60 includes natural solidification, dry solidification, or UV light irradiation solidification of the unsolidified sealant 60. The solidification method of the sealant 60 is not limited to these, and it is understood that any method may be used as long as the sealant 60 can be solidified. For example, a sealant 60 that requires dry solidification is used by dry solidification, a sealant 60 that can be solidified by direct UV light irradiation is used by UV light solidification, and a corresponding solidification method is used for other types of sealant.

[0225] In this preferred embodiment, the unsolidified sealant 60 is covered by the positioning block 40, and the sealant 60 is solidified to ensure the adhesion and sealing effect of the sealant.

[0226] Example 3c:

[0227] 18, the substrate 10 may be fabricated first, or the LED chip 20 may be mounted on the front surface of the substrate 10, and then the support 30 (fence) and the positioning block 40 may be provided around the LED chip 20. That is, the embodiment of the present invention provides another LED packaging method, which includes the following steps:

[0228] In step S101, the substrate 10 is manufactured.

[0229] In step S102', the LED chip 20 is mounted on the front surface of the substrate 10.

[0230] In step S103', the substrate 10 is placed on a support 30 (fence) (which is ring-shaped and surrounds the LED chip 20) having a mounting groove 31 (in which a positioning block 40 is installed), and the support 30 is placed in front of the substrate 10.

[0231] In step S104, the bottom surface and side surface of the translucent member 50 (transparent cover) are abutted against the groove bottom surface 311 of the mounting groove 31 and the positioning block 40, respectively, so that the side surface 51 of the translucent member 50 (transparent cover) and the groove bottom surface 311 and groove side surface 312 of the mounting groove 31 form a sealing groove.

[0232] Step S105 includes placing a sealant 60 in the sealing groove.

[0233] Specifically, the difference from Example 3b is that in this example, the LED chip 20 is first installed and then the support base 30 is installed, which makes it inconvenient to manufacture the support base 30 (fence) using the DPC process. Therefore, in this example, when installing the support base 30 (fence), the support base 30 is first manufactured in a ring shape, and then a mounting groove 31 that penetrates the top of the support base 30 is installed on at least a part of the inner wall of the support base 30, and then the top of the substrate 10 and the bottom of the support base 30 (fence) are connected. However, the other steps of this example are the same as in Example 2, and as it is sufficient to refer to the description of Example 2, they will not be described again here.

[0234] In the LED package structure and LED packaging method provided by the present invention, the LED package structure 100 includes a substrate 10, an LED chip 20, a support 30 (fence), a positioning block 40, a transparent member 50 (transparent cover), and an encapsulant 60, wherein the substrate 10 has a front surface and a rear surface facing each other. The LED chip 20 is fixed to the front surface of the substrate 10, the support 30 (fence) is ring-shaped and surrounds the outer periphery of the LED chip 20, and the support 30 (fence) has a mounting groove 31 that penetrates the top and inner wall of the support 30 (fence), the mounting groove 31 has a groove bottom surface 311 and a groove side surface 312, and the positioning block 40 is installed in the mounting groove 31. The bottom surface of the transparent member 50 (transparent cover) forms a sealing groove together with the groove bottom surface 311 and groove side surface 312 of the mounting groove 31, and the sealant 60 is placed in the sealing groove.In the present invention, first, the transparent member 50 (transparent cover) is restricted by positioning it with the plurality of positioning blocks 40, and a sealing groove is formed by the side surface of the transparent member 50 (fence) and the groove bottom surface 311 and groove sidewall 312 of the mounting groove 31, thereby restricting the maximum amount of sealant that can be accommodated in the sealing groove. The sealant 60 is installed in the sealing groove from the upper opening of the sealing groove. That is, the sealant 60 is installed between the transparent member 50 (transparent cover) and the side surface 51 of the sealing groove, so that the sealant 60 is exposed to the outside. This avoids the problem of difficulty in measuring the thickness of the sealant when installing the sealant 60 in the sealing space in the LED package structure, which is caused by first installing the sealant and then installing the transparent member on the support. For example, when measuring the thickness of the sealant 60, the height of the sealing groove is first measured, and then the sealant 60 and the sealing groove top are measured. The distance between the transparent member 50 and the groove is measured, and the sealant dosage is obtained by simple calculation, making measurement very convenient. This installation eliminates the need to install a bottom sealant on the groove bottom 311 of the mounting groove 31 and the transparent member 50 (transparent cover). The bottom sealant is not subjected to an upward buoyancy force against the transparent member 50 (transparent cover), and the bottom sealant does not apply upward pressure to the transparent member 50 (transparent cover) due to its own repulsive force. This avoids the problem of a sealed area being formed as soon as the bottom sealant and the transparent member 50 come into contact with each other in the prior art. It also avoids the problem of the prior art where the air inside the sealed space is compressed, increasing the pressure inside the sealed area and causing the transparent member 50 (transparent cover) to float up. It also avoids the problem of bubbles and pores being generated in the sealant 60 when the transparent member 50 (transparent cover) floats up, which further enhances the sealing effect of the LED package structure 100. Example 4:

[0235] A 3D TOF (3-Dimensional Time-of-Flight) device is a light-emitting device that combines distance measurement and 3D imaging technologies. The current package structure of a light-emitting device device mainly includes a substrate, a package body, a transparent member, and a light-emitting element. The package body is ring-shaped and attached to the front of the substrate. The transparent member is attached to the top of the package body and is surrounded by the package body and substrate to form a receiving cavity in which the light-emitting element is received. The transparent member includes a transparent layer and a diffusion layer. The diffusion layer includes a diffusion structure to refract the laser light into a large-angle beam and protect the eyes. To ensure eye safety, a photoelectric detection device must be installed within the receiving cavity. The photoelectric detection device receives the laser light, reflects it through the diffusion layer, and converts the optical signal into an electrical signal, allowing the operator to determine whether the diffusion layer on the transparent member has fallen off.

[0236] However, there are several problems with the actual use of photoelectric detectors. First, the installation space is small, and the space available for the package to install the photoelectric detector is even smaller, which limits the selection of light-emitting element size. Second, the manufacturing and algorithm of the photoelectric detector are relatively complicated, time-consuming, and costly. Third, while VCSEL (vertical-cavity surface-emitting laser) light-emitting elements are mainly driven by pulse current, photoelectric detectors require bias voltage drive. Since the driving methods of the two are completely different, it is only necessary to install two types of driving integrated circuits in the package structure, which further improves manufacturing time and costs. Fourth, due to the size limitations of photoelectric detection devices, they cannot receive light reflected from only a portion of the diffusion layer, but not from the entire area. Furthermore, if the diffusion layer is damaged, the light will either be emitted directly through the transparent layer or reflected to another location and cannot be received by the photoelectric detection device. Therefore, the photoelectric detection device can only detect whether the diffusion layer is missing, and cannot accurately detect whether only a portion of the diffusion layer is damaged, so the photoelectric detection device cannot reliably protect human eyes.

[0237] A fourth embodiment of the present invention provides a packaging structure for a light emitting device. As shown in Figures 19 and 20, the packaging structure 100 includes a substrate 10, a light emitting device 20, a fence 30, and a transparent member 40 (transparent cover). A first circuit layer 11 is disposed on the front surface of the substrate 10. The light emitting device 20 is disposed on the front surface of the substrate 10, and the light emitting device 20 is connected to the first circuit layer 11. The fence 30 is disposed on the front surface of the substrate 10, and includes a first section and a second section spaced apart from each other on a portion of the front surface of the substrate 10. The first section and the second section are anode conductors 31 and cathode conductors 32, respectively, connected to an electrical signal detection module. The anode conductors 31 and cathode conductors 32 are disposed on the front surface of the substrate 10 with a gap therebetween, and the anode conductors 31 and cathode conductors 32 are disposed around the light emitting device 20 and the first circuit layer 11. The transparent member 40 (transparent cover) includes a transparent conductive layer 41, a diffusion layer 42, and a transparent layer 43, which are stacked together, and the transparent conductive layer 41 is connected to the anode conductor 31 and the cathode conductor 32. The light emitting element 20 is a laser element, and when electricity is applied to the first circuit layer 11, the laser light emitted from the light emitting element 20 is refracted by the transparent member 40 (transparent cover) and emitted to the outside. The diffusion layer has a diffusion structure, so when electricity is applied to the first circuit layer 11, the laser light emitted from the light emitting element 20 passes through the diffusion layer 42 and refracts the light beam at a larger angle before being emitted to the outside, preventing the laser light from shining into the human eye and protecting the eyes. To better protect human eyes, an operator can determine whether the diffusion layer 42 has fallen off or been damaged by detecting the light-transmitting conductive layer 41. The operator first applies electricity to the anode conductor 31 and the cathode conductor 32, and then obtains the resistance value of the light-transmitting conductive layer 41 using an electrical signal detection module connected to the anode conductor 31 and the cathode conductor 32. If the resistance of the light-transmitting conductive layer 41 cannot be detected, it can be determined that the diffusion layer 42 has fallen off or been damaged.If the resistance of the transparent conductive layer 41 can be detected and the resistance value is not within the normal range, it can be determined that the diffusion layer 42 and some areas of the transparent conductive layer 41 are damaged (damage to the transparent conductive layer 41 during product use means that most of the diffusion layer 42 is damaged). If the resistance of the transparent conductive layer 41 can be detected and the resistance value is within the normal range, it can be determined that the diffusion layer 42 has not fallen off and that some areas are not damaged. The present invention installs a conductive transparent conductive layer 41 on the diffusion layer 42, and detects whether the resistance value of the transparent conductive layer 41 is normal, thereby determining whether the diffusion layer 42 has fallen off or been damaged. Compared with the prior art, the present invention not only eliminates the need to manufacture a photoelectric detection device with a complicated algorithm and high manufacturing costs, but also eliminates the need to arrange an additional driving integrated circuit suitable for the driving method of the photoelectric detection device within the package structure, thereby reducing the time and cost of manufacturing and detection, shortening the work process, and improving the work efficiency of the product. Since there is no need to install a photoelectric detection device within the package space, the space occupied by the light emitting device is increased, allowing a larger size light emitting device to be installed within the package structure, increasing the options for chip size selection. Furthermore, while it can only be determined whether the diffusion layer is missing, the present invention can determine whether a portion of the diffusion layer is damaged through the magnitude of the resistance value, thereby better ensuring safety to human eyes.

[0238] It can be understood that the resistance of the transparent conductive layer 41 detected by the electrical signal detection module is first measured by the electrical signal detection module to measure the current and voltage passing through the transparent conductive layer 41, respectively, and then the resistance of the transparent conductive layer 41 is calculated to determine whether the diffusion layer 42 has fallen off or been damaged. Of course, the present invention can also directly determine whether the diffusion layer 42 has fallen off or been damaged by measuring the current and voltage passing through the transparent conductive layer 41 using the electrical signal detection module. If the current of the transparent conductive layer 41 cannot be detected, it can be determined that the diffusion layer 42 has fallen off. If the current of the transparent conductive layer 41 can be detected but the current or voltage is abnormal, it can be determined that some areas of the diffusion layer 42 and the transparent conductive layer 41 are damaged. If the current of the transparent conductive layer 41 can be detected and the current and voltage are within the normal range, it can be determined that the diffusion layer 42 has not fallen off and that some areas are not damaged.

[0239] It can be understood that whether the resistance value of the transparent conductive layer 41 is within the normal range can be achieved by comparing with big data, etc. For example, in a synchronous test, the resistance value of the transparent conductive layer has a certain data range, and if the resistance value of the transparent conductive layer is significantly different from this resistance value range, it can be determined that some areas of the diffusion layer and the transparent conductive layer in this package structure are damaged.

[0240] As shown in Figures 19, 20 and 21, in one embodiment, the back surface of the substrate 10 is provided with a second circuit layer 12 that is electrically connected to the first circuit layer 11, thereby facilitating circuit connection.

[0241] Preferably, as shown in FIG. 21 , the substrate 10 is provided with a third conductive hole 15 and a fourth conductive hole 16 penetrating the substrate 10, and the first circuit layer 11 includes an anode circuit 111 and a cathode circuit 112 connected to the anode and cathode of the light-emitting element 20, respectively, the anode circuit 111 is connected to the second circuit layer 12 through the third conductive hole 15, and the cathode circuit 112 is connected to the second circuit layer 12 through the fourth conductive hole 16.

[0242] Preferably, the first circuit layer 11 includes a driving integrated circuit (not shown), and the light-emitting device 20 is a VCSEL laser chip. The driving integrated circuit is connected to the VCSEL laser chip and the transparent conductive layer 41, and provides a pulse driving current to the VCSEL laser chip and the transparent conductive layer 41. Since an electrical signal detection module can be integrated into the driving integrated circuit, a separate driving integrated circuit is not required within the package structure, and the resistance value of the transparent conductive layer 41 can be detected, thereby reducing manufacturing time and costs. Of course, the light-emitting material in the package structure provided by the present invention is not limited to a VCSEL laser chip or a 3D TOF device. For example, the present invention can also be applied to a security device that needs to detect whether other diffusion layers are damaged.

[0243] As shown in Figures 20 and 21, the fence 30 is preferably provided with a first conductive hole 13 and a second conductive hole 14 penetrating the substrate 10, the anode conductor 31 is connected to the second circuit layer 12 through the first conductive hole 13, and the cathode conductor 32 is connected to the second circuit layer 12 through the second conductive hole 14, with the first conductive hole 13 being used for electrical connection between the anode conductor 31 and the second circuit layer 12 and the second conductive hole 14 being used for electrical connection between the cathode conductor 32 and the second circuit layer 12.

[0244] Preferably, a first mounting groove 311 is formed on the top of the anode conductor 31, and the first mounting groove 311 is disposed on at least a portion of the side wall of the anode conductor 31 above the light emitting device 20 and passes through the top of the anode conductor 31; a second mounting groove 321 is formed on the top of the cathode conductor 32, and the second mounting groove 321 is disposed on at least a portion of the side wall of the cathode conductor 32 above the light emitting device 20 and passes through the top of the cathode conductor 32; and the translucent member 40 (transparent cover) is fixed in the first mounting groove 311 and the second mounting groove 321, making the mounting of the translucent member 40 (transparent cover) more stable.

[0245] Preferably, the fences 30 are separated by a partition groove 33, and the anode conductor 31 and the cathode conductor 32 are symmetrically arranged across the partition groove 33. Separating the fences 30 by the partition groove 33 increases the distance between the anode conductor 31 and the cathode conductor 32, reducing the possibility of a short circuit between the anode conductor 31 and the cathode conductor 32, and the anode conductor 31 and the cathode conductor 32 are symmetrically arranged across the partition groove 33, improving the mounting stability of the translucent member 40 (transparent cover).

[0246] Preferably, the anode conductor 31 is shaped like a "Π", and the cathode conductor 32 is shaped like an inverted "Π", the opening of the anode conductor 31 and the opening of the cathode conductor 32 are arranged opposite each other, and at least a portion of the light emitting device 20 extends into at least one of the openings of the anode conductor 31 and the cathode conductor 32, thereby reducing the area of ​​the light emitting device 20 exposed to the outside, protecting the light emitting device 20, and further improving the durability of the light emitting device package structure 100.

[0247] An insulating material is placed in the partition groove 33 to reduce the possibility of short circuiting between the anode conductor 31 and the cathode conductor. The insulating material may be made of plastic, rubber, insulating adhesive, or other materials. The present invention does not specifically limit the insulating material as long as it can insulate the anode conductor 31 and the cathode conductor 32.

[0248] Preferably, the anode conductor 31 and the cathode conductor 32 are both made of copper. In practical application, the anode conductor 31 and the cathode conductor 32 are attached to the substrate 10 using a DPC (Direct Plating Copper) process. The DPC process can manufacture the substrate 10 at a low temperature of approximately 250 to 350°C, which avoids the adverse effects of high temperatures on the material or circuit structure and reduces the cost of the manufacturing process.

[0249] Regarding the light-transmitting member 40 (transparent lid), preferably, the light-transmitting member (transparent lid) 40 has a bottom surface facing the light-emitting element 20, the diffusion layer 42 is completely covered by the bottom surface of the light-transmitting layer 43, the light-transmitting conductive layer 41 is completely covered by the bottom surface of the diffusion layer 42, and the bottom surface of the light-transmitting conductive layer 41 is adhered to the bottom surface of the first mounting groove 311 and the bottom surface of the second mounting groove 321 by a conductive adhesive 50, thereby achieving fixation to the light-transmitting member 40 (transparent lid).

[0250] The conductive adhesive 50 is an adhesive having a certain level of conductive properties, and is usually composed mainly of a base resin and a conductive filler, i.e., conductive particles. The conductive adhesive 50 is made of materials such as epoxy resin, organic silicone resin, and polyimide resin. However, the present invention does not impose any restrictions on the conductive adhesive 50, as long as it does not affect the detection of the resistance of the transparent conductive layer 41 and the package structure 100.

[0251] In one embodiment, the light-transmitting conductive layer 41, the diffusion layer 42, and the light-transmitting layer 43 are all plate-shaped, and the light-transmitting member 40 (transparent lid) is also a flat plate (see FIG. 19). Of course, the present invention does not limit the specific shape of the light-transmitting member 40 (transparent lid). For example, the light-transmitting member 40 (transparent lid) may be a hollow bulb-shaped or hemispherical shape. It is sufficient that the diffusion layer 42 is covered by the bottom surface of the light-transmitting layer 43, and the light-transmitting conductive layer 41 covers the diffusion layer 42 to protect human eyes and enable detection of the diffusion layer 42.

[0252] Preferably, the light-transmitting conductive layer 41 is made of indium tin oxide (ITO). ITO has excellent electrical conductivity and light transmittance, so it forms a transparent conductive film on the bottom surface of the diffusion layer 42, and the light transmittance of the conductive film can reach 90%. Of course, the present invention does not limit the specific material of the light-transmitting conductive layer 41, and materials such as indium tin oxide, indium gallium tin oxide, or indium tin zinc oxide can be used as long as the resistance of the light-transmitting conductive layer 41 can be detected and the light-emitting device 20 can pass through the light-transmitting conductive layer 41. In actual application, the light-transmitting conductive layer 41 is covered on the bottom surface of the diffusion layer 42 by evaporation.

[0253] In an actual package, the diffusion layer 42 and the transparent layer 43, which are stacked together, are first fabricated, the conductive film 41 is then deposited on the bottom surface of the diffusion layer 42, and the substrate 10 is then fabricated. The anode conductor 31 and the cathode conductor 32, which are spaced apart, are then attached to the substrate 10 using DPC (Direct Plating Copper) technology. The light emitting device 20 is then fixed to the first circuit layer 11 using a eutectic process and connected to the first circuit layer 11 by wire bonding. A conductive adhesive is then applied to the first mounting groove 311 and the second mounting groove 321 to connect the transparent member 40 (transparent cover) and the fence 30, completing the entire package. During testing, an operator first applies electricity to the anode conductor 31 and the cathode conductor 32, and then uses an electrical signal detection module to check the transparent conductive layer 41 in the above manner to determine whether the diffusion layer 42 has fallen off or is damaged.

[0254] The present invention provides a package structure for a light emitting device, and the package structure 100 includes a substrate 10, a light emitting device 20, a fence 30, and a transparent member 40 (transparent cover), wherein a first circuit layer 11 is disposed on the front surface of the substrate 10, the light emitting device 20 is disposed on the front surface of the substrate 10, and the light emitting device 20 is connected to the first circuit layer 11, the fence 30 is disposed on the front surface of the substrate 10, and the fence 30 includes an anode conductor 31 and a cathode conductor 32, and the anode conductor 31 and the cathode conductor 32 are separated. The anode conductor 31 and the cathode conductor 32 are disposed on the outer periphery of the light emitting device 20 and the first circuit layer 11, and the transparent member 40 (transparent cover) includes a transparent conductive layer 41, a diffusion layer 42, and a transparent layer 43, which are stacked one on top of the other. The transparent conductive layer 41 is connected to the anode conductor 31 and the cathode conductor 32. When electricity is applied to the first circuit layer 11, the laser light emitted from the light emitting device 20 passes through the diffusion layer 42 and is refracted at a larger angle to exit, thereby protecting the eyes. An operator can first apply electricity to the anode conductor 31 and the cathode conductor 32 to measure the resistance of the transparent conductive layer 41 and determine whether the diffusion layer 42 has fallen off or been damaged. If the resistance of the transparent conductive layer 41 cannot be detected, it can be determined that the diffusion layer 42 has fallen off; if the resistance of the transparent conductive layer 41 can be detected but the resistance value is not within a normal range, it can be determined that there is damage to some areas of the acetic acid layer 42 and the transparent conductive layer 41; if the resistance of the transparent conductive layer 41 can be detected and the resistance value is within a normal range, it can be determined that the diffusion layer 42 has not fallen off and is not partially damaged. In the present invention, a conductive transparent conductive layer 41 is provided on the diffusion layer 42, and the resistance of the transparent conductive layer 41 is detected to determine whether it is normal to determine whether the diffusion layer 42 has fallen off or is damaged.Compared with the prior art, the present invention eliminates the need to manufacture a photoelectric detection device with a complicated algorithm and high cost, and also eliminates the need to install an extra driving integrated circuit suitable for the driving method of the photoelectric detection device in the package structure, thereby simplifying the packaging and detection method, saving the time and cost of manufacturing and detection, shortening the work process, and improving the work efficiency of the product. Since there is no need to install a photoelectric detection device in the package structure, the space occupied by the light emitting device is increased, allowing a larger light emitting device to be installed in the package structure, and the range of chip size options is wider. In addition, while the prior art could only determine whether the diffusion layer is missing, the present invention can determine whether a part of the diffusion layer is missing or damaged by judging the resistance value, thereby better ensuring the safety of human eyes. Example 5:

[0255] Example 5a:

[0256] 22 and 23, an embodiment of the present invention provides an LED device 100, which includes a support 10 (support structure), an LED chip 20, a translucent member 30 (transparent cover), and a phosphor. The support 10 (support structure) includes the fence and a substrate 11. Specifically, the support 10 (support structure) includes the substrate 11, which has a front surface and a rear surface facing each other. The LED chip 20 is fixed to the front surface of the substrate 11, and a receiving cavity 13 for receiving the LED chip 20 is formed between the translucent member 30 and the support 10 (support structure). The translucent member 30 is disposed in front of the substrate 11 and covers the LED chip 20. The phosphor is disposed in at least one of the support 10 (support structure) and the translucent member 30. When the phosphor is irradiated with light emitted from the LED chip 20, it fluoresces and generates visible light. When the LED chip 20 is operating, the light emitted from the LED chip 20 irradiates the phosphor material, causing the phosphor material to generate visible light. Therefore, by installing the phosphor material in the LED device 100 provided by the present invention, the operating state of the LED device 100 can be more easily observed, making production and use more convenient and allowing users to more easily observe the operating state of the LED device 100 and reducing the probability of safety accidents. In the prior art, there are mainly two methods for detecting the operating state of an LED device. One method is to install another chip that can generate visible light in the LED device. However, in actual production, if the visible light chip and the LED chip are connected in parallel, one chip may fail during use while the other works normally, which is likely to lead to incorrect judgment. If the visible light chip and the LED chip are connected in series, the visible light chip may fail during use but the ultraviolet chip may not, which will result in the LED device failing. This series connection design increases the risk of failure of the entire component. The other method involves adding a monitoring circuit to determine whether the equipment is operating normally based on the change in current and voltage in the equipment circuit, but adding a monitoring circuit is difficult and expensive.However, the present invention uses another visible light chip or monitoring circuit in the LED device, avoiding the problems of increased misjudgment rate, increased failure rate, and difficult and costly manufacturing due to the addition of a monitoring circuit, which are caused by the use of visible light chips in the prior art. Therefore, the LED device provided by this embodiment has greater advantages in actual use by users.

[0257] The LED device 100 can also be used for lamps that can emit invisible light, such as UV-LED lamps and infrared LED lamps, and when a fluorescent material that can produce a fluorescent reaction with the invisible light is installed, it can be understood that it is possible to detect the operating status of lamps such as UV-LED lamps and infrared LED lamps.

[0258] Specifically, in one embodiment, the support 10 further includes a package body 12 (fence), which is used to mount the translucent member 30 (i.e., a transparent cover; the translucent member 30 is installed higher than the top surface of the LED chip 20 to avoid interference between the translucent member 30 and the LED chip 20), thereby improving the sealing effect of the LED device 100 and enhancing the protection performance of the LED device 100. Preferably, the package body 12 (fence) is ring-shaped and has an inner wall, a top, and a bottom. The bottom of the package body 12 (fence) is placed in front of the substrate 11, and the package body 12 (fence) surrounds the outer periphery of the LED chip 20, forming the receiving cavity 13 surrounded by the translucent member 30, the package body 12 (fence), and the substrate 11. Preferably, the substrate 11 and the package body 12 (fence) can be integrally molded, which makes manufacturing very convenient.

[0259] Preferably, the translucent member 30 is connected to the package body 12 (fence) by an adhesive 40 mixed with the fluorescent material, or the fluorescent material is installed in at least one of the receiving cavities 12 (fence). When the LED chip 20 emits invisible light, it reacts with the fluorescent material to generate visible light, which is emitted to the outside through the translucent member 30, allowing the human eye to confirm the operating state of the LED device 100.

[0260] 22, a mounting groove 121 is preferably provided on the inner wall of the package body 12 (fence) at least in a portion above the LED chip 20, penetrating the top of the package body 12 (fence), and the translucent member 30 is fixed to the mounting groove 121 on at least one of the bottom and side surfaces with the adhesive 40 mixed with the phosphor material. By fixing the adhesive 40 mixed with the phosphor material in the mounting groove 121, not only the phosphor material can be fixed, but also the translucent member 30 can be fixed in the mounting groove 121.

[0261] Preferably, as shown in Figures 26 and 27, the phosphor is applied to a phosphor layer 50, which may be ring-shaped, bar-shaped, circular, or polygonal. Specifically, the phosphor layer 50 may be fabricated by mixing the phosphor with an adhesive, mixing the phosphor with other solidifiable liquids, or forming the phosphor layer 50 directly from the phosphor. However, the present invention does not impose any limitations on these methods, as long as the phosphor can be applied to at least one of the support and the transparent member and the user can observe visible light generated from the phosphor. The present invention does not impose any limitations on the coating thickness, width, or shape of the phosphor, as long as the user can observe visible light generated by the fluorescent reaction of the phosphor.

[0262] In one embodiment, the substrate 11 has a first circuit layer 111 on the front surface thereof for connection with the LED chip 20. A second circuit layer 112 is provided on the rear surface of the substrate 11, and a conductive hole 113 is provided in the substrate 11, penetrating the front and rear surfaces thereof. The first circuit layer 111 and the second circuit layer 112 are connected through the conductive hole 113, thereby realizing connection between the LED chip 20 and the first circuit layer 111 and the second circuit layer 112.

[0263] In a specific application, the first circuit layer 111 and the second circuit layer 112 can be formed on the substrate 11 by a DPC (Direct Plating Copper) process.

[0264] In one embodiment, the LED chip 20 can be either a flip chip, a normal chip, or a vertical chip. A welding aid can be placed on the first circuit layer 111 on the front side of the substrate 11, and the LED chip 20 can be placed on the welding aid to connect the LED chip 20 to the substrate 11.

[0265] 26 and 27, the first circuit layer 111 has a ring-shaped groove 115, and the phosphor material is disposed in the ring-shaped groove 115 to improve the placement of the phosphor material and prevent the flow of unsolidified liquid from affecting the normal operation of other components in the LED device 100, even if the phosphor layer 50 is not solidified. The phosphor layer 50 can be applied to the ring-shaped groove 115, or can be applied in a block shape on the ring-shaped groove 115, as long as the user can observe the visible light generated by the fluorescent reaction of the phosphor material.

[0266] In one embodiment, the light-transmitting member 30 (transparent cover) is made of quartz or sapphire. However, the present invention does not limit the specific material of the light-transmitting member 30 (transparent cover), as long as it can transmit light. For example, the light-transmitting member 30 is made of PMMA (polymethyl methacrylate). Preferably, the light-transmitting member 30 (transparent cover) has a square shape and can be laid flat in the mounting groove 121. At least one of the bottom or side surfaces of the light-transmitting member 30 (transparent cover) is connected to the groove surface of the mounting groove 121 with adhesive 40. When one of the bottom or side surfaces of the light-transmitting member 30 (transparent cover) is connected to the groove surface of the mounting groove 121 with adhesive 50, the other surface abuts against the groove surface of the mounting groove 121.

[0267] Regarding the phosphor, in one embodiment, the LED chip 20 is a UV-LED chip, and the phosphor is ultraviolet phosphor powder or other phosphor material capable of generating a fluorescent reaction with ultraviolet light. In another embodiment, the LED chip 20 is a high-energy infrared laser LED chip, and the phosphor is infrared phosphor powder or other phosphor material capable of generating a fluorescent reaction with high-energy infrared laser. Apart from the above-mentioned phosphor materials, the present invention does not place any restrictions on the specific material of the phosphor, as long as it is compatible with the installation of the LED chip, and the invisible light emitted from the LED chip can generate a fluorescent reaction to detect the operating state of the LED chip.

[0268] In practical applications, some phosphors have absorptivity, so to prevent the phosphor from absorbing the light emitted from the LED chip 20 and affecting the use of the LED device 100, a sufficient amount of phosphor must be ensured to generate visible light, and the concentration of the phosphor mixed into the adhesive 40 should be 5% to 10%.

[0269] As can be seen, the adhesive 40 mixed with the phosphor material is distributed on the front surface of the substrate 11 to form a ring shape (see FIG. 24) or a block shape (see FIG. 25), and is positioned on the package body 12 (fence) or on the inner wall of the package body 12 (fence). However, the present invention does not limit the application thickness, width, or shape of the adhesive 40 mixed with the phosphor material, as long as it allows the user to conveniently observe the visible light generated by the fluorescent reaction of the phosphor material, and has a viscous effect when adhering the translucent member 30 and the package body 12.

[0270] It should be noted that, although the preferred embodiment described above installs the phosphor in the mounting groove 121, in other embodiments the phosphor may be installed in the receiving cavity or even outside the receiving cavity. For example, the phosphor may be installed on the surface (outside or inside) of the transparent member 30 or on the front surface of the substrate 11, or may be installed between multiple layers of the transparent member 30. However, the present invention does not specifically limit the installation location of the phosphor, as long as the phosphor is installed in the LED device 100 and the light emitted from the phosphor and the LED chip 20 reacts to produce visible light that can be observed by a user.

[0271] As can be understood, the adhesive 40 is a paint with a bonding function, and if the LED chip 20 is a UV-LED chip, the adhesive 40 should be an adhesive that can withstand ultraviolet light, and is usually made of materials such as silica gel, epoxy resin, fluorine resin, etc. Of course, the present invention does not limit the specific material of the adhesive 40, as long as the durability of the adhesive satisfies the durability of the device.

[0272] The method of installing the fluorescent material in the LED device 100 is not limited to the method of mixing the fluorescent material into the adhesive 40, but may also be a method of installing a fluorescent block or fluorescent layer having the fluorescent material prepared by mixing the fluorescent material with a solidifiable liquid on at least one of the support base 10 (support base structure), the translucent member 30 (transparent cover), etc. It can be understood that in this embodiment, there is no limitation on the method of installing the fluorescent material, and it is sufficient as long as the fluorescent material can be fixed in the LED device 100 and the user can observe the visible light generated by the fluorescent material.

[0273] Example 5b:

[0274] As shown in Figures 26 and 27, Example 5b of the present invention provides an LED device 100, but differs from Example 5a in that the translucent member 30 in Example 5b is hemispherical and directly surrounds the LED chip 20, and the support 10 (support structure) does not include the package body 12 (fence) in Example 5a. This results in a simpler and more compact structure, better protection for the LED chip 20, and better moisture-blocking properties.

[0275] Specifically, the LED device 100 includes a support 10 (support structure), an LED chip 20, a light-transmitting member 30 (transparent cover), and a phosphor. The support 10 (support structure) includes a substrate 11, which has a front surface and a back surface facing each other. The LED chip 20 is installed on the front surface of the substrate 11, and the light-transmitting member 30 (transparent cover) is installed on the front surface of the substrate 11 and covers the LED chip 20. The phosphor is installed on at least one of the support 10 (substrate 11) and the light-transmitting member 30, and is used to generate visible light by a fluorescent reaction that occurs when irradiated with light emitted from the LED chip 20. When the LED chip 20 is operating, the light emitted from the LED chip 20 shines on the phosphor material, causing the phosphor material to generate visible light. Therefore, by installing the phosphor material in the LED device 100 provided by the present invention, the operating state of the LED device 100 can be easily monitored, thereby reducing the likelihood of a safety accident. In the prior art, there are two main methods for detecting the operating state of the current LED device 100. One method involves installing another visible light-generating chip within the device. However, in actual manufacturing, when the visible light chip and the LED chip are connected in parallel, one chip may fail during use while the other operates normally, which can easily lead to incorrect detection. When the visible light chip and the LED chip are connected in series, the visible light chip may fail during use while the ultraviolet chip does not, resulting in the LED device failing. This series connection design increases the risk of failure of the entire component. The other method involves adding a monitoring circuit to determine whether the device is operating normally based on changes in current and voltage in the device circuit, but adding a monitoring circuit is difficult and costly. However, the present invention uses another visible light chip or monitoring circuit in the LED device, which avoids the problems of the prior art, such as increased misjudgment rate and increased failure rate due to the use of a visible light chip, and the difficult and costly manufacturing process required to add a monitoring circuit, and the LED device provided by this embodiment has even greater advantages in actual use by users.

[0276] As can be understood, the light-transmitting member 30 is made of a light-resistant material such as silica gel, epoxy resin, fluororesin, etc. The light-transmitting member 30 is placed on the front surface of the substrate 11, and the light-transmitting member 30 can be directly molded onto the front surface of the substrate 11 using a mold (molding is also called press molding or compression molding).

[0277] Example 5c:

[0278] As shown in Figures 28 and 29, Example 3 of the present invention provides an LED device 100. The difference from Example 5a is that the package body 12 in Example 5c is a metal tube cap 14. The LED device 100 includes a support 10 (support structure), an LED chip 20, a light-transmitting member 30 (transparent lid), and a phosphor. The support 10 (support structure) includes a substrate 11 having a front and a back surface facing each other. The LED chip 20 is mounted on the front surface of the substrate 11. The light-transmitting member 30 and the support 10 form a receiving cavity 13 for receiving the light-transmitting member 30. The phosphor is mounted in at least one of the support 10 (support structure) and the light-transmitting member 30 (transparent lid). The phosphor generates visible light by fluorescent reaction when irradiated with light from the LED chip 20. When the LED chip 20 is operating, light emitted from the LED chip 20 is irradiated onto the phosphor material, which then generates visible light. Therefore, the LED device 100 provided by the present invention includes the phosphor material, allowing the user to detect the operating state of the LED device 100, making production and application much easier and allowing users to easily observe the operating state of the LED device, thereby reducing the likelihood of safety accidents. There are two main methods for detecting the operating state of LED devices in the prior art. One method involves installing another visible light-emitting chip within the device. However, in actual production, when the visible light chip and the LED chip are connected in parallel, one chip may fail while the other operates normally during use, which can easily lead to incorrect detection. Furthermore, when the visible light chip and the LED chip are connected in series, the visible light chip may fail while the ultraviolet chip does not, which significantly increases the risk of device failure. The other method involves adding a monitoring circuit to determine whether the equipment is operating normally based on the change in current and voltage in the equipment circuit, but adding a monitoring circuit is difficult and expensive.However, the present invention uses other visible light chips or monitoring circuits in LED devices, which avoids the problems of increased misjudgment rate, increased failure rate, and the difficulty and high cost of adding monitoring circuits that come with using other visible light chips, and therefore gives the device greater advantages in actual use by users.

[0279] Specifically, there are openings at both the top and bottom of the metal tube cap 14, the bottom of the metal tube cap 14 is placed in front of the substrate 11, the translucent member 30 (transparent lid) is connected to the top of the metal tube cap 14 and seals the opening at the top, the metal tube cap 14 surrounds the outside of the LED chip 20, and is surrounded by the translucent member 30 (transparent lid), the metal tube cap 14 and the substrate 11 to form the accommodating cavity 13, and the fluorescent material is installed on the front of the substrate 11 and inside the metal tube cap 14.

[0280] In one embodiment, the metal tube cap 14 includes a housing portion 141 and a first connecting portion 142 and a second connecting portion 143 extending from both ends of the housing portion 141 along a direction perpendicular to the longitudinal direction of the housing portion 141, the first connecting portion 142 being located at the upper end of the metal tube cap 14 and the second connecting portion 143 being located at the lower end of the metal tube cap 14, the first connecting portion 142 being used to connect to the translucent member 30 and the second connecting portion 143 being used to connect to the substrate 11.

[0281] Furthermore, the housing part 141 is ring-shaped, the first connecting part 142 extends from the housing part 141 into the housing part 141 in a direction perpendicular to the longitudinal direction of the housing part 141, the length of the first connecting part 142 is shorter than the length of the light-transmitting member 30, the second connecting part 143 extends from the housing part 141 to the outside of the housing part 141 in a direction perpendicular to the housing part 141, the first connecting part 142 surrounds the outer periphery of a part of the upper surface of the light-transmitting member 30, and the housing part 141 surrounds the outer periphery of the side surface of the light-transmitting member 30.

[0282] It can be seen that the translucent member 30 (transparent lid) and the upper end of the metal tube cap 14 can be connected by high-temperature sintering using glass solder as a medium, and that a welding layer 144 can be formed between the substrate 11 and the lower end of the metal tube cap 14 by welding.

[0283] Example 5d:

[0284] As shown in FIG. 30, embodiment 5d of the present invention provides an LED packaging method, which is used to package the LED device 100, and as shown in FIGS. 22 to 30, the LED packaging method includes the following steps:

[0285] In step S101, a support 10 (support structure) on which a substrate 11 is placed is fabricated.

[0286] In step S102, the LED chip 20 is mounted on the front surface of the substrate 11.

[0287] Step S103 includes placing a fluorescent material on at least one of the support base 10 (support base structure) and the translucent member 30 (transparent cover), and connecting the translucent member 30 (transparent cover) to the support base 10 (support base structure).

[0288] In the step of fabricating the support 10 (support structure) on which the substrate 11 is mounted, a first circuit layer 111 and a second circuit layer 112 used for connecting to the LED chip 20 are mounted on the front and back of the substrate 11, respectively. The first circuit layer 111 and the second circuit are mounted using the DPC (Direct Plating Copper) process. The second circuit layer 112 can be mounted on the back of the substrate 11, and the substrate 11 is provided with conductive holes 113 penetrating the substrate 11. The first circuit layer 111 and the second circuit layer 112 are connected through the conductive holes 113, thereby realizing the connection between the LED chip 20 and the first and second circuit layers 111 and 112 and facilitating the electrical connection to the LED chip 20 in the support 10 (support structure).

[0289] In specific applications, the first circuit layer 111 and the second circuit layer 112 are plated with nickel and gold to prevent metal migration and oxidation on the circuit and improve conductivity and oxidation resistance, with the nickel plating thickness being greater than 3 μm and the gold plating thickness being greater than 0.05 μm to ensure conductivity and oxidation resistance.

[0290] The step of placing the LED chip 20 on the front surface of the substrate 11 serves to secure the LED chip 20 to the substrate 11. In one embodiment, the LED chip 20 is a flip chip, and the first circuit layer 111 includes a welding plate, on which a welding aid is placed, and the LED chip 20 is placed on the welding aid to connect the LED chip 20 to the substrate. Under normal circumstances, the first welding plate is formed simultaneously when the first circuit layer 111 is fabricated. Preferably, the welding aid is applied to the first circuit layer 111 by spot application. It can be understood that spot application of the welding aid to the first circuit layer 111 can be achieved by combining an operator and a manipulator, for example, by installing a smart manipulator to apply the welding aid evenly and in a fixed amount, thereby further improving the welding effect.

[0291] To strengthen the bond between the LED chip 20 and the substrate 11, the ceramic substrate 11 with the chip fixed thereto is placed in a eutectic furnace to perform eutectic. In specific applications, if the welding disk is made of a gold-tin alloy, the temperature of the eutectic furnace can be set to at least one temperature range of 300°C to 340°C, and it is understood that a nitrogen atmosphere is used for protection during eutectic.

[0292] In the step of installing the fluorescent material on at least one of the support base 10 (support base structure) and the translucent member 30, the fluorescent material can be mixed with an adhesive and then applied to at least one of the support base 10 (support base structure) and the translucent member 30, or the fluorescent material can be mixed with a solidifiable liquid to prepare a fluorescent block with the fluorescent material and then installed on at least one of the support base 10 (support base structure) and the translucent member 30 (transparent cover), or the fluorescent material can be installed in the LED device 100 by directly forming a fluorescent layer 50, but it is sufficient as long as the fluorescent material can be fixed in the LED device 100 and the user can observe the visible light generated by the fluorescent material.

[0293] The adhesive is a coating material with a binding function, and may be made of materials such as silica gel, epoxy resin, or fluororesin. However, it should be understood that the present invention does not limit the specific material of the adhesive. Furthermore, the solidification method of the adhesive may include natural solidification by waiting for the adhesive to dry, drying solidification, or solidification by UV light irradiation. The solidification method of the adhesive is not limited to these, and it should be understood that any method that can solidify the adhesive is sufficient. For example, if the adhesive can be solidified by drying only, the drying solidification method should be used; if the adhesive can be solidified by direct UV light irradiation, the UV light solidification method should be used; and for other types of adhesives, the corresponding solidification method should be used.

[0294] Preferably, the fluorescent material is a fluorescent layer, and the fluorescent layer is in the form of a ring, bar, circle, polygon, or block of no particular shape distributed on at least one of the support base 10 and the transparent member 30 (transparent cover). However, the present invention does not limit the coating thickness, width, and shape of the fluorescent material, as long as the user can conveniently observe the visible light generated by the fluorescent reaction of the fluorescent material.

[0295] Regarding the step of connecting the translucent member 30 to the support base 10 (support base structure), the translucent member 30 and the support base 10 of different structural shapes and the connection method between the translucent member 30 and the support base 10 may be slightly different, but it is sufficient as long as the translucent member 30 (transparent cover) and the support base 10 can form an accommodating cavity 13 that can accommodate the translucent member 30 (transparent cover), or the translucent member 30 can be installed in front of the substrate 11 and cover the LED chip 20.

[0296] 22 to 25, a semi-inorganic packaging method is used to connect the translucent member 30 (transparent lid) and the support 10 (support structure). Specifically, after completing the manufacturing process of the substrate 11, the package body 12 to be connected to the substrate 11 must be manufactured. A mounting groove 121 is formed in at least a portion of the inner wall of the package body 12 above the LED chip 20, penetrating the top of the package body 12. The bottom of the package body 12 is then placed in front of the substrate 11 and the package body 12 is placed around the LED chip 20. The bottom of the translucent member 30 (transparent lid) is then placed in the mounting groove 121. At least one of the bottom and side of the translucent member 30 (transparent lid) is then fixed to the mounting groove 121 with an adhesive, and the adhesive is finally solidified. The installation position of the fluorescent material can be optimized according to the structural shapes of the light-transmitting member 30 and the support 10 (support structure), and in the first embodiment of the present invention, the fluorescent material can be mixed into the adhesive, and then the light-transmitting member 30 (transparent cover) and the fluorescent material can be uniformly fixed in the mounting groove 121, thereby installing the fluorescent material and simultaneously bonding the light-transmitting member 30 (transparent cover) to the package body 12. Preferably, the substrate 11 and the package body 12 can be integrally molded, which makes manufacturing more convenient.

[0297] As another preferred embodiment of the present invention, reference can be made to Example 2 of the present invention, in which, as shown in Figures 26 and 27, the light-transmitting member 30 and the support 10 are packaged and connected using an organic packaging method. Specifically, the light-transmitting member 30 (transparent cover) can be made of silica gel, epoxy resin, or fluororesin. After the phosphor material is installed in at least one of the support 10 (support structure) and the light-transmitting member 30 (transparent cover), the light-transmitting member 30 is directly molded onto the front surface of the substrate 11 through a mold to complete the connection between the light-transmitting member 30 and the support 10 (support structure). It can be understood that the location of the phosphor material can be adjusted depending on the specific structural shapes of the light-transmitting member 30 (transparent cover) and the support 10. In Example 2 of the present invention, a phosphor layer 50 containing the phosphor material is installed on the front surface of the substrate 11 to facilitate user observation. The fluorescent layer 50 is fabricated by mixing a fluorescent material with an adhesive, and may also be fabricated by mixing a fluorescent material with other liquids that can be solidified, but the present invention is not limited thereto, and it is sufficient that the fluorescent material can be attached to the substrate 11.

[0298] 28 and 29, an all-inorganic package is used to connect the translucent member 30 (transparent lid) and the support 10 (support structure). Specifically, the substrate 11 is fabricated, and then the package body 12 to be connected to the substrate 11 is fabricated. The package body 12 is a metal tube cap 14, and openings are formed at the top and bottom of the metal tube cap 14. After a fluorescent material is applied to at least one of the support 10 (support structure) and the translucent member 30, the top of the translucent member 30 and the package body are sintered at high temperature using glass solder to connect the translucent member 30 (transparent lid) and the support 10. The top opening of the metal tube cap 14 is sealed with the translucent member 30 to seal the LED device 100. Finally, the bottom of the metal tube cap 14 is welded to the front of the substrate 11 to form a weld layer 144.

[0299] As shown in FIG. 31, in another preferred embodiment of this embodiment, the step of disposing the fluorescent material on at least one of the support 10 (support structure) and the translucent member 30 further includes the following steps:

[0300] In step S1031, a first circuit layer 111 is disposed on the front surface of the substrate 11, a receiving groove is disposed on the first circuit layer 111, and a fluorescent material is mixed with an adhesive and filled into the receiving groove.

[0301] In this embodiment, the provision of a receiving groove allows the adhesive containing the phosphor material to be conveniently placed, and prevents the unsolidified adhesive from flowing and affecting other components of the LED device 100.

[0302] As shown in FIG. 32, in a preferred embodiment of the present invention, the fabrication of the phosphor material includes the following steps:

[0303] In step S1032, the fluorescent material is put into an adhesive.

[0304] In step S1033, the fluorescent material and adhesive are mixed.

[0305] Step S1034 includes removing air bubbles in the adhesive containing the fluorescent material.

[0306] Preferably, since the phosphor has absorption properties, the concentration of the phosphor mixed into the adhesive 40 can be controlled to 5% to 10% when adding the phosphor to the adhesive to avoid the absorption properties of the phosphor affecting the use of the LED device 100 with respect to the light emitted from the LED chip 20 and to ensure that the phosphor generates a sufficient amount of visible light. To ensure the concentration, the present invention provides a smart manipulator that can uniformly distribute the phosphor and adhesive in a fixed amount, thereby ensuring the light irradiation effect and detection effect of the LED device 100.

[0307] As can be understood, the mixing of the fluorescent material and the adhesive can be achieved by an artificial or mechanical structure. For example, a smart manipulator can be installed to mix the material uniformly, thereby further enhancing the luminous effect of the fluorescent material. The removal of air bubbles from the adhesive containing the fluorescent material can be achieved by an artificial or mechanical structure. For example, a degassing machine can be used to remove air bubbles, thereby further enhancing the luminous effect of the fluorescent material.

[0308] In this embodiment, the phosphor material and the adhesive are mixed together and air bubbles in the adhesive containing the phosphor material are removed, so that the mixture of the phosphor material and the adhesive is more uniform, which improves the luminous effect of the phosphor material and makes it easier for users to detect the operating status of the LED device 100.

[0309] In the LED device and LED packaging method provided by the present invention, the LED device 100 includes a support 10 (support structure), an LED chip 20, a light-transmitting member 30 (transparent cover), and a phosphor, wherein the support 10 includes a substrate 11 having a front and a back surface facing each other, and the LED chip 20 is fixed to the front surface of the substrate 11. The light-transmitting member 30 and the support 10 surround a receiving cavity 13 for receiving the light-transmitting member 30 (transparent cover), or the light-transmitting member 30 (transparent cover) is disposed in front of the substrate 11 and covers the LED chip 20. The phosphor is disposed in at least one of the support 10 (support structure) and the light-transmitting member 30, and generates visible light by a fluorescent reaction caused by illumination of the phosphor with light emitted from the LED chip 20. When the LED chip is operating, the light emitted from the LED chip is irradiated onto the phosphor material, which then generates visible light. Therefore, the LED device and LED packaging method provided by the present invention installs a phosphor material that can emit visible light through a fluorescent reaction with the light emitted from the LED chip to detect the operating state of the LED device, making both production and application very simple and convenient, allowing users to easily observe the operating state of the LED device and reducing the probability of safety accidents. In addition, the present invention avoids the problems that would arise if another visible light chip or monitoring circuit were used in the LED device, such as an increase in the rate of misjudgment due to the use of another visible light chip, an increase in the device failure rate, and the difficulty and cost of production required to add monitoring, making this device more advantageous in users' actual applications. Example 6:

[0310] 33 and 34, the present invention provides a multi-layer board, and the board 100 includes a first substrate 10, a package body 20, and a second substrate 50. The first substrate 10 has a front and a back surface facing each other. A first circuit layer 11 is provided on the front surface of the first substrate 10, and a second circuit layer 12 is provided on the back surface of the first substrate 10. The first circuit layer 11 is electrically connected to the second circuit layer 12. The first circuit layer 11 includes a first circuit anode 111 and a first circuit cathode 112. The package body 20 is ring-shaped and is provided on the front surface of the first substrate 10, surrounding the first circuit anode 111 and the first circuit cathode 112. The second substrate 50 is connected to the second circuit layer 12 on the back surface of the first substrate 10 by welding, and a heat dissipation layer 51 is provided on the back surface of the second substrate 50. The multi-layer substrate provided by the present invention, on the one hand, adds a second substrate 50 and provides a heat dissipation layer 51 on the second substrate 50, but does not provide a heat dissipation layer 52 on the rear surface of the first substrate 10, preventing the circuits on the rear surface of the first substrate 10 from contacting the heat dissipation device or heat dissipation layer 51. This eliminates the need for an insulating layer to prevent contact between the circuits and the heat dissipation device or heat dissipation layer, as in the prior art, and also solves the problem of the insulating layer falling off, which can cause anode-cathode short circuits or current leakage, as in the prior art. On the other hand, by providing interconnecting circuits on the front and rear surfaces of the first substrate 10, the circuits do not need to pass through the package body 20, eliminating the need for a through-hole in the package body 20 as in the prior art, and further solving the problem of the difficulty of effectively sealing the subsequent LED device 200 due to the provision of a through-hole. Therefore, the present invention not only achieves heat dissipation for high-power products, but also meets the demand for hermetic packaging of high-power LED products, reduces the risk of LED product failure, and improves product safety and reliability.

[0311] 34 to 36 , the first substrate 10 has a conductive hole 13 formed therein, the conductive hole 13 including at least two first conductive holes 131 and at least two second conductive holes 132. Preferably, the openings of the at least two first conductive holes 131 on the front surface of the first substrate 10 are located inside and outside the package 20, and the openings of the at least two second conductive holes 132 on the front surface of the first substrate 10 are located inside and outside the package 20, respectively. A conductive material is disposed in each of the first conductive holes 131 and the second conductive holes 132 to achieve electrical connection between the first conductive layer 11 and the second conductive layer. The conductive holes 13 penetrate the first substrate 10, eliminating the need for circuits to pass through the package body 20 and thus eliminating the need for notches on the package body 20 as in the prior art. This further satisfies the requirements for hermetic packaging of high-power LED products, reduces the risk of LED product failure, and improves product safety and reliability.

[0312] In one embodiment, as shown in FIG. 33a, a surface metal layer 11b is formed on the surface of the first substrate 10, covering the copper material 11a used to form the first circuit layer 11. This improves the oxidation resistance of the product and facilitates subsequent installation of the LED chip 30 on the surface of the first substrate 10. Specifically, the surface metal layer 11b (first circuit layer 11) is made of gold (Au), silver (Ag), nickel (Ni), palladium (Pd), etc. It should be noted that the LED chip 30 can be a flip chip, and the LED chip 30 can be fixed using a post-eutectic process. The surface metal layer 11b is preferably made of nickel and gold, with the nickel covered by gold. The nickel layer has a thickness of more than 3 μm, and the gold layer has a thickness of more than 0.05 μm. The LED chip 30 can be a horizontal or vertical chip, and is fixed using the LED chip 30 in a subsequent wire bonding process. The material of the surface metal layer 11b can be nickel, palladium, or gold. The nickel layer, palladium layer, and gold layer are stacked on the front of the first substrate 10 in this order, with the nickel layer being thicker than 3 μm, the palladium layer being thicker than 0.05 μm, and the gold layer being thicker than 0.05 μm.

[0313] In specific applications, the first substrate 10 can be made of ceramic materials, such as aluminum nitride ceramics (AlN), gallium nitride ceramics (GaN), aluminum oxide ceramics (Al2O3), silicon carbide ceramics (SiC), etc., to meet the heat dissipation and insulation requirements of LED devices, especially high-power LED devices. In specific applications, the thickness of the first substrate 10 can be 0.3 mm to 2.0 mm.

[0314] Regarding the first circuit layer 11 and the second circuit layer 12, as shown in Figures 34 to 36, the first circuit layer 11 further includes an electrode anode 113 and an electrode cathode 114, the electrode anode 113 and the electrode cathode 114 are disposed on the front surface of the first substrate 10, and the electrode anode 113 and the electrode cathode 114 are disposed around the outer periphery of the package body 20, so that there is no need to form a notch in the package body 20. The second circuit layer 12 includes a second circuit anode 121 and a second circuit cathode 122 that are spaced apart and insulated from each other, and the second circuit anode 121 and a second circuit cathode 122 is installed on the back surface of the first substrate 10, a second circuit anode 121 is installed below the electrode anode 113 and the first circuit anode 111, and the second circuit cathode 122 is located below the electrode cathode 114 and the first circuit cathode 112, the second circuit anode 121 is connected to the electrode anode 113 and the first circuit anode 111 respectively through at least two of the first conductive holes 131, and the second circuit cathode 122 is connected to the electrode cathode 114 and the first circuit cathode 112 respectively through at least two of the second conductive holes 132.

[0315] Specifically, there are at least two first conductive holes 131, the electrode anode 113 is located on the front surface of the first substrate 10 and covers one of the first conductive holes 131 (top end), the first circuit anode 111 is located on the front surface of the first substrate 10 and covers the other one of the first conductive holes 131 (top end), the second circuit anode 121 is located on the corresponding back surface of the first substrate 10, the second circuit anode 121 covers one of the first conductive holes 131 (bottom end), and the second circuit anode 121 covers the other one of the first conductive holes 131 (bottom end). Therefore, the second circuit anode 121 is connected to the electrode anode 113 and the first circuit anode 111 respectively through the first conductive hole 131, thereby realizing the connection between the electrode anode 113 and the first circuit anode 111. Similarly, there are at least two second conductive holes 132, the electrode cathode 114 is disposed on the front surface of the first substrate 10 and covers one of the second conductive holes 132 (top end), the first circuit cathode 112 is disposed on the front surface of the first substrate 10 and covers the other of the second conductive holes 132 (top end), the second circuit cathodes are disposed on the corresponding back surfaces of the first substrates 10, the second circuit cathode 122 covers one of the second conductive holes 132 (bottom end), and the second circuit cathode 122 covers the other of the second conductive holes 132 (bottom end). Therefore, the second circuit cathode 122 is connected to the electrode anode 114 and the first circuit cathode 112, respectively, through the second conductive holes 132, thereby realizing the connection between the electrode anode 114 and the first circuit anode 112.

[0316] Specifically, the front surface of the first substrate further includes a protective layer 14, which is a metal layer remaining around the periphery after the first circuit layer is fabricated by an etching process, and is similar in structure to the first circuit layer 11, except that this protective layer 14 does not have a conductive role but is left on the surface of the ceramic substrate to balance stress, prevent bending of the first substrate 10, and protect the substrate. A protective layer similar to protective layer 14 can also be installed on the back surface of the first substrate 10, and the back protective layer of the first substrate 10 can participate in welding the first substrate 10 to the second substrate 50.

[0317] Preferably, the conductive hole 13 is provided with a conductive metal connecting the first circuit layer 11 and the second circuit layer 12, and the conductive hole 13 has a conductive function, among which the conductive metal is a metal such as tungsten (W), titanium (Ti), nickel (Ni), chromium (Cr), copper (Cu) or an alloy thereof.

[0318] In a specific application, the diameter of the conductive holes 13 is set to 0.09 mm to 0.15 mm to ensure the conductive function of the conductive holes 13 while avoiding the impact of an excessively large diameter on the use of the first substrate 10. When the current passing through the first circuit layer 11 and the second circuit layer 12 is large, the number of the conductive holes 13 can be increased and the spacing between the individual conductive holes 13 can be set to be greater than 0.2 mm to prevent the ceramic substrate from bursting due to an insufficient spacing between the conductive holes 13.

[0319] Preferably, the gap between the second circuit anode 121 and the second circuit cathode 122 is filled with an insulating material to ensure insulation.

[0320] In a specific application, the first circuit layer 11, the second circuit layer 12 and the third welding portion 63 (described later) are all formed on the first substrate 10 by a DPC (Direct Plating Copper) process.

[0321] As shown in Figures 33 to 35, Figures 33, 33a, and 34 show an embodiment of an LED device including multiple chips, while Figure 35 shows another embodiment of an LED device applying only a single chip. The package body 20 is ring-shaped and has a top and a bottom. The bottom of the package body 20 is attached to the front surface of the first substrate 10. A mounting groove 21 is formed in the package body 20. A light-transmitting member 40 is attached to the mounting groove 21 to seal the opening of the mounting groove 21. The mounting groove 21 penetrates the package body 20 and is positioned on at least a portion of the inner wall and top of an LED chip 30 (described below). When the light-transmitting member 40 is attached to the mounting groove 21, the light-transmitting member 40, the package body 20, and the front surface of the first substrate 10 form a package cavity that accommodates the LED chip 30.

[0322] As can be understood, the package body 20 has a hollow stepped shape, and the stepped portion of the package body 20 forms the mounting groove 21. The package body 20 may have a single-layer stepped or multi-layered structure to accommodate the light-transmitting member 40 and a sealant used to secure the light-transmitting member 40. For example, if the package body 20 has a single-layered stepped structure (as shown in FIG. 33), the bottom surface of the light-transmitting member 40 is installed at the bottom of the mounting groove 21 via a sealant. For example, if the package body 20 has a double-layered stepped structure, the light-transmitting member 40 may be installed directly in the lower layer, and a sealant may be installed between the side of the light-transmitting member 40 and the side of the upper layer to secure the light-transmitting member 40 in the mounting groove 21. Of course, the package body 20 of the embodiment of the present invention may have a stepped structure, but the present invention is not limited to this. For example, the top of the package body 20 may be a flat surface, and the bottom surface of the light-transmitting member 40 may be welded to the top surface of the package body 20. The present invention does not limit the shape of the package body 20, and the package body 20 may be circular, rectangular, diamond-shaped, or the like, as long as the light-transmitting member 40 is installed in the mounting groove 21 and does not interfere with the use of the LED device.

[0323] In a specific application, the package body 20 can be made of copper, and nickel and gold layers can be laminated on the surface of the package body 20 to improve the corrosion resistance and wear resistance of the package body 20 and extend the service life of the package body 20. The height of the package body 20 can be 200 μm to 1200 μm, and the thickness of the nickel layer and the gold layer on the package body 20 can be greater than 3 μm and 0.05 μm, respectively.

[0324] 33, 37, and 38, in specific applications, both the first substrate 10 and the second substrate 50 can be ceramic substrates, and the second substrate 50 can be made of a ceramic material, such as aluminum nitride ceramic (AlN), gallium nitride ceramic (GaN), aluminum oxide ceramic (Al2O3), or silicon carbide ceramic (SiC), to meet the heat dissipation and insulation requirements of the LED device 200, especially a high-power LED device. In specific applications, the thickness of the second substrate 50 can be 0.3 mm to 2.0 mm.

[0325] Regarding the heat dissipation layer 51, preferably, the heat dissipation layer 51 includes a copper heat dissipation layer, a nickel heat dissipation layer, and a gold heat dissipation layer that are stacked together, and the thickness of the copper heat dissipation layer is 50 to 300 μm, the thickness of the nickel heat dissipation layer is greater than 3 μm, and the thickness of the gold heat dissipation layer is greater than 0.05 μm, thereby providing the heat dissipation layer 51 with excellent heat dissipation effect.

[0326] In one embodiment, a welding layer 60 is provided between the first substrate 10 and the second substrate 50, connecting the first substrate 10 and the second substrate 50. As shown in Figures 33 to 38, in one embodiment, the welding layer 60 includes a first welding portion 61 and a second welding portion 62 spaced apart from each other, the first welding portion 61 being located on the front side of the second substrate 50 corresponding to the second circuit anode 121, and the second welding portion 62 being located on the front side of the second substrate 50 corresponding to the second circuit cathode 122, the first welding portion 61 and the second welding portion 62 being welded to the second circuit anode 121 and the second circuit cathode 122, respectively, and the first welding portion 61 and the second welding portion 62 being insulated from each other. Thus, welding between the first substrate 10 and the second substrate 50 is achieved.

[0327] Preferably, the first welding portion 61 and the second circuit anode 121 have the same shape and size, and the second welding portion 62 and the second circuit cathode 122 have the same shape and size. This arrangement not only improves the connection between the first substrate 10 and the second substrate 50, but also prevents short circuit between the anode and the cathode due to slight misalignment between the first substrate 10 and the second substrate 50 when they are welded. Specifically, the first welding portion 61 and the second circuit anode 121 have the same shape and size along the direction perpendicular to the thickness direction of the first welding portion 61 and the second welding portion 62, and the second welding portion 62 and the second circuit cathode 122 have the same shape and size, but in the present invention, there are no restrictions on the shape, size, or thickness of the first welding portion 61, the second circuit anode 121, the second welding portion 62, and the second circuit cathode 122, as long as the first welding portion 61 and the second welding portion 62 perform the welding function and perform the functions of circuit conduction framing and welding for the second circuit anode 121 and the second circuit cathode 122.

[0328] Preferably, the welding layer 60 further includes a third weld 63, which is shaped like a sealed ring and surrounds the outer periphery of the second circuit layer 12. The third weld 63 are spaced apart and insulated from each other between the second circuit layer 12. Similarly, the welding layer 60 further includes a fourth weld 64, which is shaped like a sealed ring and surrounds the outer periphery of the first weld 61 and the second weld 62. The fourth weld 64 is spaced apart and insulated from each other between the first weld 61 and the second weld 62. The third weld 63 and the fourth weld 64 are surrounded by the back surface of the first substrate 10 and the front surface of the second substrate 50 to form a sealed space that accommodates the second circuit anode 121 and the second circuit cathode 122, thereby protecting the second circuit anode 121 and the second circuit cathode 122. The installation of the third weld 63 and the fourth weld 64 not only strengthens the connection strength between the first substrate 10 and the second substrate 50, but also surrounds the second circuit anode 121, the second circuit cathode 122, the first weld 61 and the second weld 62, reducing the possibility of moisture penetrating the second circuit anode 121 and the second circuit cathode 122, and improving the protection of the product.

[0329] Preferably, the third weld 63 and the fourth weld 64 have the same shape and size, which not only improves the connection between the first substrate 10 and the second substrate 50 but also prevents, to a certain extent, the anode-cathode seat phenomenon caused by slight misalignment between the first substrate 10 and the second substrate 50 when they are welded. Specifically, the third weld 63 and the fourth weld 64 have the same shape and size along a direction perpendicular to the thickness direction of the third weld 63 and the fourth weld 64. However, the present invention does not limit the specific shape, size, and thickness of the third weld 63 and the fourth weld 64 as long as they perform the welding function.

[0330] Preferably, in order to avoid a short circuit phenomenon due to slight misalignment between the first substrate 10 and the second substrate 50 when they are welded, the present invention limits the distance between the third weld 63 and the second circuit layer 12, the second circuit anode 121 and the second circuit cathode 122, the fourth weld 64 and the respective first weld 61 and second weld 62, and the first weld 61 and second weld 62, thereby reducing the possibility of a short circuit occurring. As shown in Figures 33, 36 and 37, in a specific application, the minimum distance W1 between the third weld 63 and the second circuit layer 12 is greater than 0.2 mm, the minimum distance W2 between the second circuit anode 121 and the second circuit cathode 122 is greater than 0.2 mm, the minimum distance between the fourth weld 64 and the first weld 61 is greater than 0.2 mm, the minimum distance between the fourth weld 64 and the second weld 62 is greater than 0.2 mm, and the minimum distance between the first weld 61 and the second weld 62 is greater than 0.2 mm.

[0331] Preferably, an insulating material is placed in the gap between the third welded portion 62 and the second circuit layer 12 to ensure insulation.

[0332] Preferably, the first circuit layer 11, the second circuit layer 12 and the welding layer 60 all include a copper metal layer, a nickel metal layer and a gold metal layer which are laminated together, wherein the thickness of the copper metal layer is 50 μm to 80 μm, the thickness of the nickel metal layer is greater than 3 μm, and the thickness of the gold metal layer is greater than 0.05 μm, so that the first circuit layer 11 and the second circuit layer 12 have a better electrical conductivity and the welding layer 60 has a better welding effect.

[0333] 33 and 34, the present invention provides an LED device 200, which includes the above-mentioned multi-layer substrate 100, and further includes a transparent member 40 and an LED chip 30, where the transparent member 40 is connected to the package body 20, and the LED chip 30 is installed on the front surface of the first substrate 10 and is electrically connected to the first circuit anode 111 and the first circuit cathode 112. The transparent member 40, the package body 20 and the front surface of the first substrate 10 form a package cavity that seals the LED chip 30.

[0334] As shown in Figures 33 and 34, the LED chip 30 is preferably integrated using a COB (Chip On Board) package. Conventional LED modules are typically integrated using an SMT (Surface Mounted Technology) chip bonding method, which requires a PCB to be first assembled, and the LED device must be mounted on the PCB. This method has three main problems. First, because the LED devices are individually welded to the PCB (Printed Circuit Board) with solder paste, heat generated from the chips in the LED device must be transferred through the solder paste and PCB to the heat dissipation device connected to the PCB. This lengthens the heat dissipation route, affecting the heat dissipation and durability of the product. Furthermore, an insulating layer must be added during PCB fabrication to prevent short circuits on the PCB, further reducing the thermal conductivity of the product. Second, when installing LED devices using SMT, a certain distance must be maintained between each device to prevent interference between LED devices due to chip bonding errors. However, the size of the LED devices themselves affects the size of the LED module, limiting product applications. Third, the large distance between LED devices reduces the optical power density per unit area. However, because the COB package integrates chips directly onto the substrate, compared to the conventional SMT method, the COB method does not require the use of solder paste, shortening the product's heat dissipation route and improving product heat dissipation. Furthermore, the need for large chip-to-chip distances is eliminated, avoiding chip bonding errors, resulting in a more compact product, improved optical power density, and improved usage efficiency.

[0335] Preferably, the LED chip 30 is a UV-LED chip, and the wavelength range of the UV-LED chip is from 100 nm to 350 nm. The present invention can realize heat dissipation for a large-power UV-LED device, meet the requirement for an airtight package for the large-power UV-LED device, reduce the risk of failure of the large-power UV-LED device, and improve product safety.

[0336] Preferably, the LED chip 30 is a flip chip, which makes it easy to integrate using COB technology, and the electrodes of the LED chip 30 can be made of gold-tin alloy, which makes it easy to mount the LED chip 30 on the first substrate 10.

[0337] In a specific application, the number and connection manner of the LED chips 30 can be set according to actual needs or the power supply of the LED device 200. For example, the number of the LED chips 30 can be 64, and the 64 LED chips 30 can be arranged in 8 rows and 8 columns on the front surface of the first substrate 10, with the LED chips 30 in each row being connected in series. It can be understood that in some embodiments, the series and parallel connections of the LED chips 30 can be 2*2 (2 in series, 2 in parallel), 3*3, 4*4, 5*5, 6*6, 7*7, 8*8, etc., but the present invention does not limit the number and connection manner of the LED chips 30 as long as it does not affect actual use.

[0338] 33, the transparent member 40 is made of quartz or sapphire. A gold-tin alloy is provided at the bottom of the transparent member 40, which is connected to the package body 20, to facilitate connection. The gold content is 80 wt%, the tin content is 20 wt%, and the melting point of the gold-tin alloy is 280°C.

[0339] As shown in Figure 39, a method for manufacturing a multi-layer substrate provided by an embodiment of the present invention can be used to fabricate the above-mentioned multi-layer substrate 100, and as shown in Figures 33 to 38, the method includes the following steps:

[0340] In step S101, a first substrate and a second substrate are fabricated, and then the first substrate and the second substrate are welded together.

[0341] In step S1011, a first substrate is manufactured.

[0342] A conductive hole is provided through the first substrate, avoiding the location where the package body is to be installed.

[0343] A first circuit layer and a second circuit layer are respectively disposed on the front and rear surfaces of the first substrate, and the first circuit layer and the second circuit layer are electrically connected through the conductive holes. The first circuit layer includes a first circuit anode and a first circuit cathode, and the second circuit layer includes a second circuit anode and a second circuit cathode.

[0344] A ring-shaped package body is disposed on the front surface of the first substrate, and the package body surrounds the first circuit anode and the first circuit cathode.

[0345] In step S1012, a second substrate is fabricated.

[0346] A metal layer is provided on the front surface of the second substrate, which is used for welding the second circuit layer on the rear surface of the first substrate, and a heat dissipation layer is provided on the rear surface of the second substrate.

[0347] In step S1013, the second substrate is connected to the first substrate.

[0348] The second circuit layer on the rear surface of the first substrate is connected to the front surface of the second substrate by a welding process to form a welding layer.

[0349] Preferably, the first substrate 10 and the second substrate 50 are made of ceramic materials, such as aluminum nitride ceramics (AlN), gallium nitride ceramics (GaN), aluminum oxide ceramics (Al2O3), and silicon carbide ceramics (SiC), to meet the heat dissipation and insulation requirements of LED devices, especially high-power LED devices. In practical applications, the first substrate 10 and the second substrate 50 are fabricated by tape casting and then cut and / or ground to the required size. In practical applications, the thickness of the first substrate 10 and the second substrate 50 is 0.3 mm to 2.0 mm.

[0350] Preferably, after completing the step of forming the conductive holes through the first substrate 10, the surface of the first substrate 10 is first metallized with a film to improve the surface performance of the first substrate 10.

[0351] Specifically, the conductive holes 13 are formed by drilling holes in the first substrate 10 using a method such as laser drilling or mechanical drilling, and then plating the holes with a conductive metal using a vacuum plating process to form the conductive holes 13. The conductive metal can be tungsten (W), titanium (Ti), nickel (Ni), chromium (Cr), copper (Cu), or other metals or alloys thereof. The diameter of the conductive holes 13 is set to 0.09 mm to 0.15 mm to ensure the conductivity of the conductive holes 13 while avoiding the impact of an excessively large diameter on the use of the first substrate 10. If the current passing through the first circuit layer 11 and the second circuit layer 12 is large, the number of conductive holes 13 can be increased, and the spacing between the individual conductive holes 13 can be set to be greater than 0.2 mm to prevent the ceramic substrate from bursting due to insufficient spacing between the conductive holes 13.

[0352] Specifically, a metal film can be formed on the surface of the first substrate 10 through a process such as vacuum plating or magnetron sputtering. The metal film can be tungsten (W), titanium (Ti), nickel (Ni), chromium (Cr), copper (Cu), or an alloy thereof. In a specific application, the metal can be a tungsten-titanium alloy (WTi), with a thickness of 0.1 μm. In a specific application, the metal film can be a nickel-chromium alloy (CrNi), with a thickness of 0.25 μm.

[0353] Specifically, a first circuit layer 11 and a second circuit layer 12 are provided on the front and back surfaces of the first substrate 10, respectively, and a heat dissipation layer is provided on the second substrate 50, all of which are provided on the first substrate 10 and the second substrate 50 using a DPC (Direct Plating Copper) process.

[0354] Preferably, the step of providing the first circuit layer 11 and the second circuit layer 12 includes plating the surface of the first substrate 10 with copper, pressing a dry film onto the copper-plated surface of the first substrate 10, forming patterns for the first circuit layer 11 and the second circuit layer 12 on the dry film, exposing and developing the first circuit layer 11 and the second circuit layer 12, etching the circuit to remove unnecessary copper, removing the dry film on the surface of the first substrate 10, and polishing the first substrate 10, the first circuit layer 11, and the second circuit layer 12. The copper plating thickness is 50 μm to 80 μm, and the purpose of pressing the dry film is to cover the copper surface of the first substrate 10 with the dry film so that the patterns for the first circuit layer 11 and the second circuit layer 12 can be engraved on the dry film. The first circuit layer 11 and the second circuit layer 12 are polished with a polishing belt to improve the flatness of the surfaces of the first substrate, the first circuit layer 11, and the second circuit layer 12. As can be appreciated, the welding layer 60 and heat dissipation layer 51 can also be applied to the first substrate 10 or the second substrate 50 in a similar step.

[0355] Preferably, the steps of placing a ring-shaped package body 20 on the front surface of the first substrate 10 include: sandblasting the package body 20, pressing a film onto the package body 20, exposing and developing the package body 20, plating the package body 20 to increase its thickness, polishing the surface of the package body 20, removing the dry film on the surface of the package body 20, and decoppering and detitaniumizing the package body 20. The sandblasting of the package body 20 removes impurities, streaks, and oxide layers from the surface of the package body 20, while also roughening the surface, thereby eliminating residual stress in the component and increasing the surface hardness of the base material. The polishing improves the surface flatness of the package body 20.

[0356] In a specific application, in order to improve the corrosion resistance and wear resistance of the package device 20 and extend the service life of the package body 20, the package body 20 can be made of steel material, and a nickel metal layer and a gold metal layer can be deposited on the surface of the package body 20. In practical application, the height of the package body 20 can be 200 μm to 1200 μm, the thickness of the metal layer deposited on the package body 20 can be greater than 3 μm, and the thickness of the gold metal layer can be greater than 0.05 μm.

[0357] Preferably, before installing the ring-shaped package body 20 on the front surface of the first substrate 10 or before installing the LED chip 30 on the front surface of the first substrate 10, a surface metal layer 11b can be installed on the copper surface 11a of the first substrate 10 (on which the heat dissipation layer 51 has already been installed) and the second substrate 50. This improves the oxidation resistance of the product and facilitates the subsequent installation of the first circuit layer 11 and the LED chip 30 on the surface of the first substrate 10. Specifically, the surface metal layer 11b can be made of gold (Au), silver (Ag), nickel (Ni), palladium (Pd), etc. It should be noted that the LED chip 30 can be a flip chip, and the LED chip 30 can be subsequently fixed through a eutectic process. The surface metal layer 11b is preferably made of nickel-gold, and the nickel layer is covered with a gold layer. The nickel layer is thicker than 3 μm, and the gold layer is thicker than 0.05 μm. The LED chip 30 can also be a horizontal or vertical chip, and is subsequently fixed by a wire bonding process. The material of the surface metal layer 11b is preferably nickel, palladium, and gold. A nickel layer, a palladium layer, and a gold layer are sequentially stacked on the front side of the first substrate 10, of which the nickel layer is thicker than 3 μm, the palladium layer is thicker than 0.05 μm, and the gold layer is thicker than 0.05 μm.

[0358] Preferably, the front surface of the second substrate 50 is connected to the rear surface of the first substrate 10 by the weld layer 60 using solder reflux welding or vacuum furnace welding, and the welding temperature can be adjusted according to the melting point of the solder. In practical applications, the specific material of the solder can be selected according to the specific processing method of the chip and the translucent member 40. For example, if the welding additives selected for the chip and the translucent member 40 are eutectic, and both have a gold content of 80 wt% and a tin content of 20 wt%, the solder can be a gold-tin alloy. For example, for products with a temperature of up to 280°C in the subsequent packaging, the solder can be a gold-tin alloy (Au80Sn20), which has a gold content of 80 wt% and a tin content of 20 wt%, and a melting point of 280°C. For example, for a product with a temperature of 360°C or less in the subsequent packaging, the solder can be a gold-tin alloy (Au88Sn12), with a gold content of 88 wt%, a tin content of 12 wt%, and a solder melting point of 361°C. This corresponds to a product with a temperature of 360°C in the subsequent packaging. It can be understood that the solder spot application to the first substrate 10 and the second substrate 50 can be achieved manually or mechanically. For example, a smart manipulator can be installed to further improve the welding effect.

[0359] As can be seen, the solder is applied to the front surface of the second substrate 50 and the back surface of the first substrate 10 respectively, and then formed into the welding layer 60 by welding. Specifically, the portion of the welding layer 60 corresponding to the rear surface of the first substrate 10 is a third welding portion 63, and the portion of the welding layer 60 corresponding to the front surface of the second substrate 50 is a first welding portion 61, a second welding portion 62, and a fourth welding portion 64. The first welding portion 61 corresponds to the second circuit anode 121 and is welded to the second circuit anode 121 in the second circuit layer 12. The welding portion 62 corresponds to the second circuit cathode 122 and is welded to the second circuit cathode 122 in the second circuit layer 12. The third welding portion 63 is located on the rear surface of the first substrate 10 and is ring-shaped, surrounding the outer peripheries of the second circuit anode 121 and the second circuit cathode 122. The fourth welding portion 64 corresponds to the third welding portion 63 and is ring-shaped, surrounding the outer peripheries of the first welding portion 61 and the second welding portion 62. Preferably, the thickness of the solder applied to the third welded portion 63 and the fourth welded portion 64 (i.e., the thickness of the solder applied to the third welded portion 63 and the fourth welded portion 64) is made equal to the thickness of the solder applied between the second circuit anode 121 and the first welded portion 61 and the thickness of the solder applied between the second circuit cathode 122 and the second welded portion 62 so that the solder is applied more uniformly around the second circuit anode 121 and the second circuit cathode 122. This reduces the possibility of moisture penetrating the second circuit anode 121 and the second circuit cathode 122, thereby improving the protective performance of the product. Of course, the present invention does not limit the specific shape, size, or thickness of each portion of the welded layer 60, i.e., the specific shape, size, and thickness to be applied, as long as it serves the purpose of welding.

[0360] Preferably, to avoid anode-cathode short circuiting due to slight misalignment between the first substrate 10 and the second substrate 50 during welding, the present invention limits the distances between the third weld 63 and the second weld 12, between the second circuit anode 121 and the second circuit cathode 122, between the fourth weld 64 and the first weld layer 60 and the second weld layer 60, and between the first weld layer 60 and the second weld layer 60 to reduce the possibility of short circuiting. In a specific application, the minimum distance W1 between the third weld 63 and the second circuit layer 12 can be greater than 0.2 mm, the minimum distance W2 between the second circuit anode 121 and the second circuit cathode 122 can be greater than 0.2 mm, the minimum distance W2 between the fourth weld 64 and the first weld 61 can be greater than 0.2 mm, the minimum distance between the fourth weld 64 and the second weld 62 can be greater than 0.2 mm, and the minimum distance between the first weld 61 and the second weld 62 can be greater than 0.2 mm. The multi-substrate manufacturing method provided by the present invention, on the one hand, adds a second substrate 50 and installs a heat dissipation layer 51 on the second substrate 50, rather than installing the heat dissipation layer 51 on the rear surface of the first substrate 10. This prevents the circuits on the rear surface of the first substrate 10 from coming into contact with the heat dissipation device or heat dissipation layer 51, eliminating the need for an insulating layer to prevent contact between the circuits and the heat dissipation device or heat dissipation layer as in the prior art, and further solving the problem of anode-cathode short circuits or leakage caused by the loss of an insulating layer as in the prior art. On the other hand, by installing circuits connecting the front and rear surfaces of the first substrate 10, it is not necessary for the circuits to penetrate the package body 20, eliminating the need for a through-hole in the package body 20 as in the prior art, and further avoiding the difficulty of effectively packaging the LED device with an airtight seal due to the installation of a through-hole. Therefore, this manufacturing method not only achieves heat dissipation for high-power LED products, but also meets the demand for airtight packaging for high-power LED products, reducing the risk of LED device failure and improving product safety and reliability.

[0361] The embodiment of the present invention further provides a packaging method for a package structure, the packaging method including a manufacturing method for a multi-layer substrate, and the manufacturing method for the multi-layer substrate can be referred to as follows.

[0362] In one embodiment, after fabricating the first substrate and the second substrate and completing the steps of welding the first substrate and the second substrate, the method for manufacturing the multi-layer substrate further includes the following steps:

[0363] Step S102 includes installing an LED chip on the front surface of the first substrate, connecting the LED chip to the first circuit anode and the first circuit cathode, installing a translucent member on the package body, and forming a package cavity for sealing the LED chip among the translucent member, the package body, and the front surface of the first substrate.

[0364] Preferably, the LED chip 30 is mounted on the front surface of the first substrate 10 using a COB (Chip On Board) packaging method. In conventional technology, LED chips are typically integrated using an SMT (Surface Mounted Technology) chip bonding method. This integration method requires a PCB (Printed Circuit Board) to first mount the LED device on the PCB. This method has three main problems. First, because the LED devices are individually welded to the PCB (Printed Circuit Board) with solder paste, heat generated from the chips in the LED device must be transferred through the solder paste and PCB to the heat dissipation device connected to the PCB. This lengthens the heat dissipation route, affecting the heat dissipation and durability of the product. Furthermore, an insulating layer must be added during PCB fabrication to prevent short circuits, further reducing the thermal conductivity of the product. Second, when using SMT, chips are spaced apart to prevent interference between LED devices due to chip bonding errors. However, the size of the chips themselves increases the product size, limiting its application. Third, the large distance between chips reduces the optical power density per unit area. However, because the COB package integrates chips directly onto the substrate, compared to the conventional SMT method, the COB method does not require solder paste, shortening the product's heat dissipation route and improving heat dissipation. Furthermore, the need for large chip spacing is eliminated, avoiding chip bonding errors, resulting in a more compact product, increased optical power density, and improved usage efficiency.

[0365] Preferably, the LED chip 30 is a flip chip, which makes it convenient to integrate it in COB mode.

[0366] To strengthen the connection between the LED chip 30 and the first substrate 10, the LED chip and the substrate are subjected to eutectic formation by placing the connected LED chip 30 and the first substrate 10 in a eutectic furnace. In specific applications, the temperature of the eutectic furnace is at least in the range of 280°C to 320°C, and a nitrogen atmosphere is introduced for protection during the eutectic formation.

[0367] In a specific application, the number and connection manner of the LED chips 30 can be set according to actual needs or the power supply of the LED device 200. For example, the number of the LED chips 30 can be 64, and the 64 LED chips 30 can be arranged in 8 rows and 8 columns on the front surface of the first substrate 10, with the LED chips 30 in each row being connected in series. It can be understood that in some embodiments, the series and parallel connections of the LED chips 30 can be 2*2 (2 in series, 2 in parallel), 3*3, 4*4, 5*5, 6*6, 7*7, 8*8, etc., but the present invention does not limit the number and connection manner of the LED chips 30 as long as it does not affect actual use.

[0368] In a specific application, in the step of installing the light-transmitting member 40 on the package body 20, the light-transmitting member 40 can be made of quartz or sapphire. In a specific application, a welding aid can be installed at the bottom of the light-transmitting member 40 connected to the package body 20 to facilitate connection, such as a gold-tin alloy, in which the gold content is 80 wt% and the tin content is 20 wt%, and the melting point of the gold-tin alloy is 280°C.

[0369] In an embodiment of the present invention, an LED device 200 is obtained by mounting an LED chip 30 and a translucent member 40 on the multi-layer substrate 100. This achieves heat dissipation for a high-power LED device, meets the demand for hermetic packaging of high-power LED products, reduces the risk of LED device failure, and improves product safety and reliability. The present invention also provides a multi-layer substrate, a manufacturing method thereof, and an LED device. The multi-layer substrate 100 includes a first substrate 10, a package body 20, an LED chip 30, a translucent member 40, and a second substrate 50. A second circuit layer 12 is mounted on the back surface of the first substrate 10, and the first circuit layer 11 is electrically connected to the second circuit layer 12. The first circuit layer 11 includes a first circuit anode 111 and a first circuit cathode 112. The package body 20 is ring-shaped and mounted on the front surface of the first substrate 10, surrounding the first circuit anode 111 and the first circuit cathode 112. The transparent member is connected to the package body, and a package cavity is formed between the transparent member, the package body, and the front surface of the first substrate. The LED chip is installed in the package cavity and connected to the first circuit anode and the first circuit cathode. The front surface of the second substrate 50 is connected to the rear surface of the first substrate 10 via a welding layer 60, and a heat dissipation layer 51 is installed on the rear surface of the second substrate 50. On the one hand, the present invention adds a second substrate 50 and installs the heat dissipation layer 51 on the second substrate 50, rather than installing the heat dissipation layer 51 on the rear surface of the first substrate 10, thereby preventing the circuit on the rear surface of the first substrate 10 from coming into contact with the heat dissipation device or heat dissipation layer 51. This eliminates the need for an insulating layer to prevent contact between the circuit and the heat dissipation device or heat dissipation layer as in the prior art, and also solves the problem of anode-cathode short circuits or current leakage caused by the removal of the insulating layer as in the prior art. On the other hand, by providing a circuit connecting the front and back surfaces of the first substrate 10, the circuit does not need to penetrate the package body 20, eliminating the need to provide a through-hole on the package body 20 as in the prior art, and further avoiding the problem of difficulty in effectively packaging the LED device in an airtight manner due to the provision of a through-hole.Therefore, this manufacturing method not only realizes heat dissipation for high-power products, but also meets the demand for airtight packaging for high-power LED products, reduces the risk of failure of the LED device, and improves the safety and reliability of the product.

[0370] Example 7 includes Example 7a, Example 7b, and Example 7c, and is detailed below.

[0371] Example 7a:

[0372] The present invention provides an LED device, and as shown in Figures 40 to 45, the LED device 100 includes a substrate 10 and a plurality of LED chips 20. The substrate 10 has a front surface and a back surface facing each other, a first circuit layer 11 is provided on the front surface of the substrate 10, and the first circuit layer 11 includes a plurality of sets of anode welding discs and cathode welding discs (anode welding discs 111 and cathode welding discs 112), and a second circuit layer 12 is provided on the back surface of the substrate 10, and the second circuit layer 12 includes a plurality of sets of anode terminals and cathode terminals (anode terminals 121 and cathode terminals 122). 42, the anode terminals 121 and the cathode terminals 122 are symmetrically arranged on opposite sides of the rear surface of the substrate 10, with the anode terminals 121 arranged in a linearly spaced array at equal intervals on the same side of the rear surface of the substrate 10, and the cathode terminals 122 arranged in a linearly spaced array at equal intervals on the other side of the rear surface of the substrate 10, corresponding to each anode terminal 121. Each anode welding disk 111 is electrically connected to one anode terminal 121 through an anode conductive hole 131 that penetrates the substrate 10. Each cathode welding disk 112 is electrically connected to one cathode terminal 122 through a cathode conductive hole 132 that penetrates the substrate 10. That is, each anode welding disk 111 is connected to each anode conductive hole 131 and each anode terminal 121, and each cathode welding disk 112 is connected to each cathode conductive hole 132 and each cathode terminal 122. Each LED chip 20 is electrically connected to a set of anode welding disks 111 and cathode welding disks 121 on the front of the substrate 10, and one LED chip 20 is connected to one set of anode welding disks 111 and cathode welding disks 121. Each LED chip 20 can be independently controlled through its corresponding anode terminal 121 and cathode terminal 122. That is, when electricity is applied to the anode terminals and cathode terminals 122 on the back of the substrate 10, the operator can independently control the LED chips 20 electrically connected to that set of anode terminals 121 and cathode terminals 122, for example, to light or turn off independently.In the present invention, one LED chip 20 is connected to the substrate 10 through a set of anode welding plates 111 and cathode welding plates 112, and each LED chip 20 is controlled independently. Therefore, the LED device 100 can not only package LED chips 20 of different voltages and different wavelengths, but also allows users to independently control a single LED chip 20 or multiple LED chips 20, allowing users to control the effective light emission of any one LED chip 20 according to the usage situation.

[0373] Furthermore, in the prior art, the series-parallel connection between multiple LED chips 20 is fixed and cannot be changed, but in the present invention, each LED chip 20 can be controlled independently, so there is no fixed series-parallel connection method, and the series-parallel connection method can be changed depending on the circuit connected to the anode terminal 121 and the cathode terminal 122 (see explanation below). This improves the compatibility of the LED device 100, makes it easier to manage the LED device 100, and reduces the difficulty, time, and cost of manufacturing, thereby broadening the range of product applications and making it more adaptable.

[0374] 47-50 and 40-45, FIGS. 40-45 show an LED device having four LED chips 20, and FIG. 47 shows the independent electrical connections of the four LED chips 20. The four LED chips 20 are LED1, LED2, LED3, and LED4, respectively, and each LED chip 20 is connected in parallel to a Philips Zener chip 50 (see below). The anode welding plate 111 on the front of each substrate 10 is connected to the anode terminal 121 on the rear of the substrate 10 through the anode conductive hole 131, and the cathode welding plate 112 on the front of each substrate 10 is connected to the cathode terminal 122 on the rear of the substrate 10 through the cathode conductive hole 132. Each LED chip 20 is connected to a corresponding set of anode terminals 121 and cathode terminals 122 on the rear of the substrate 10, resulting in four anode terminals 121 and four cathode terminals. For ease of explanation, the anode terminals 121 are numbered 1, 3, 5, and 7, and the cathode terminals 122 are numbered 2, 4, 6, and 8. Therefore, both poles of LED1 are connected to terminals 1 and 2, respectively, both poles of LED2 are connected to terminals 3 and 4, both poles of LED3 are connected to terminals 5 and 6, respectively, and both poles of LED4 are connected to terminals 7 and 8, respectively. Each LED is controlled by a corresponding set of anode terminals 121 and cathode terminals 122; for example, LED1 is controlled by anode welding plate number 1 and cathode welding plate number 2, and LED2 is controlled by anode welding plate number 3 and cathode welding plate number 4.

[0375] The series connection of each LED chip 20 is realized through the printed circuit on the PCB circuit board, but there is no series-parallel connection between each LED chip 20 in the LED device 100 in this embodiment. When using a PCB, a matching circuit (for convenience of explanation, referred to as an external circuit herein) can be designed on the PCB according to the circuit design needs to form the required series-parallel connection between each LED chip.

[0376] 47a, 47b, and 40 to 45, Fig. 47a shows a schematic diagram in which the LED chips 20 are connected in parallel with one another, and the peripheral circuits (the peripheral circuits are shown as gray blocks in Figs. 47a and 47b) electrically connect the anode welding disks No. 1, No. 3, No. 5, and No. 7 to the cathode welding disks No. 2, No. 4, No. 6, and No. 8. This realizes the parallel connection of the LED chips 20.

[0377] Referring to Figures 48, 48a and 40 to 45, Figure 48 is a schematic diagram of each LED chip 20 connected in series, and through the peripheral circuit (the peripheral circuit is shown by gray blocks in Figures 48 and 48a), anode welding plate number 3 is electrically connected to cathode welding plate number 2, anode welding plate number 4 is electrically connected to cathode welding plate number 5, and anode welding plate number 6 is electrically connected to cathode welding plate number 7, thereby realizing the series connection of each LED chip 20.

[0378] Furthermore, referring to Figures 49 and 49a, through the peripheral circuit (the peripheral circuit diagram is shown by gray blocks in Figures 49 and 49a), anode welding plates number 1 and number 3 are electrically connected, anode welding plates number 5 and number 7 are electrically connected, cathode welding plates number 2 and number 4 are electrically connected, cathode welding plates number 6 and number 8 are electrically connected, and then cathode welding plate number 4 is electrically connected to anode welding plate number 5, thereby realizing a kind of series-parallel connection relationship for each LED chip 20.

[0379] Furthermore, as shown in Figures 50 and 50a, through the peripheral circuit (the peripheral circuit is shown by gray blocks in Figures 50 and 50a), anode welding disk number 1 is electrically connected to number 5, cathode welding disk number 4 is electrically connected to number 8, cathode welding disk number 2 is electrically connected to number 3, and cathode welding disk number 6 is electrically connected to number 7, thereby realizing another kind of series-parallel connection relationship for each LED chip 20.

[0380] Similar to the above example, other series-parallel connections can be realized through the peripheral circuit on the PCB board. The LED device 100 provided in this embodiment does not limit the series-parallel connection between the LED chips 20. Each LED chip 20 is provided with an independent anode and cathode terminal set, providing ample design space for the peripheral circuit, allowing it to be matched with different peripheral circuits and achieving a wide range of compatibility and applicability. Of course, the present invention does not limit the method for realizing the series-parallel connection between the LED chips 20. For example, multiple sets of anode and cathode terminal sets can be connected through a circuit equipped with switch diodes, and the user can control the on / off of the circuit through each switch diode, allowing the series-parallel connection between the LED chips 20 to be switched even when the circuit is fixed.

[0381] In this embodiment, there are four LED chips 20 arranged in a rectangular matrix, which has the advantages of good light emission uniformity. Each LED chip 20 is a Philips structure LED chip and can be a visible light emitting chip (e.g., a blue light LED chip) or a non-visible light emitting chip such as an infrared LED chip or an ultraviolet LED chip. In other embodiments, other numbers of LED chips 20 can be used. For example, the number of LED chips 20 can be n*n, where n is a natural number greater than or equal to 2, and the number of LED chips 20 can be 3*3 (9 chips in total) or 4*4 (16 chips in total). Arranging the LED chips 20 in a rectangular matrix like this has the advantages of compactness, high integration, and good light emission uniformity.

[0382] Specifically, the substrate 10 is provided with an anode conductive hole 131 and a cathode conductive hole 132 that penetrate the substrate 10, the anode conductive hole 131 and the cathode conductive hole 132 are filled with a conductive material, and the anode welding disk 111 is electrically connected to the anode conductive hole 131 and the anode terminal 121, and the cathode welding disk 112 is electrically connected to the cathode conductive hole 132 and the cathode terminal 122. This arrangement not only provides excellent conductivity, but is also simple and low-cost to manufacture. The anode conductive hole 131 and the cathode conductive hole 132 can be installed symmetrically so as to penetrate the substrate 10 vertically, making processing easier.

[0383] Specifically, as shown in Figures 41, 42, 45, and 45a, anode welding plates 111 and cathode welding plates 112 on the front surface of substrate 10 form a rectangular circuit pattern (see Figure 45a) on the front surface of substrate 10, with LED chips 20 uniformly distributed on the circuit pattern. The rectangular circuit pattern is more suitable for rectangular LED chips 20, allowing LED chips 20 to be more easily and uniformly installed on the circuit pattern. In one embodiment, the geometric center of the rectangle defined by the LED chip matrix consisting of LED chips 20 (see center 0 in Figure 41) overlaps with the geometric center of the circuit pattern, improving the symmetry of light emission of LED chip device 100. The circuit pattern includes a first edge area 13 and a second edge area 14 located on opposite sides of the circuit pattern, with anode conductive holes 131 located in the first area 13 on one side of the circuit pattern and cathode conductive holes 132 located in the second edge area 14 on the other side of the circuit pattern. The first edge area 13 and the second edge area 14 are located at the edges of the circuit pattern to prevent interference with the mounting position of the LED.

[0384] The circuit pattern has a gap 115 separating the anode welding disk 111 and the cathode welding disk 112 on the front of the substrate 10, and the gap 115 is at least 0.2 mm to ensure insulation between the welding disks. The anode conductive holes 131 are linearly arranged, and the cathode conductive holes 132 are also linearly arranged, and the anode conductive holes 131 and the cathode conductive holes 132 are arranged symmetrically with one another, which makes processing easier.

[0385] As shown in Figures 41 and 45a, to illustrate the correspondence between the anode welding plates 111 and cathode welding plates 112 on the front of the substrates 10 and the LED chips 20, the anode welding plates 111 on the front of the substrates 10 can be numbered as first anode welding plate 1P, second anode welding plate 2P, third anode welding plate 3P, and fourth anode welding plate 4P. Thus, if there are n anode welding plates 111, the nth anode welding plate 111 is nP. Similarly, the anode-cathode welding plates 112 on the front of the substrates 10 can be numbered as first cathode welding plate 1N, second cathode welding plate 2N, third cathode welding plate 3N, and fourth cathode welding plate 4N. Thus, if there are n cathode welding plates 112, the nth cathode welding plate is nN. The LED chips 20 can be numbered LED1, LED2, LED3, and LED4. Thus, if there are n LED chips, the nth LED chip is LEDn. 45a, one end of the nth anode welding plate 111 on the front side of the substrate 10 is connected to the anode of the corresponding nth LED chip LEDn, and the other end extends to the first edge area 13 to connect with the corresponding nth anode conductive hole 131. One end of the nth cathode welding plate 112 on the front side of the substrate 10 is connected to the cathode of the corresponding nth LED chip 20, and the other end extends to the second edge area 14 to connect with the corresponding nth cathode conductive hole 132. In Figure 6a, the thick dotted lines indicate the electrical connection lines ("hidden" here means imaginary) hidden in each welding disk (anode welding disk 111 and cathode welding disk 112), which are then extended outward as main lines to form the shape of each welding disk. Because there are no intersections between the welding disk patterns, the pattern of each welding disk is very simple, and each welding disk is extended as much as possible while maintaining an insulating gap to ensure sufficient contact with the electrodes of the LED chip 20 and ensure heat dissipation of the LED chip 20. In this embodiment, the hidden electrical connection lines in each welding disk pattern include at least one of horizontal and vertical connection lines and are not oblique or curved. Even when each welding disk extends outward in the form of electrical connection lines, they extend perpendicular to the hidden electrical connection lines, resulting in a block-like shape of each welding disk and a pattern composed of multiple connected rectangles. The outer edges of each welding disk are coincident, and the circuit pattern formed by each welding disk forms a rectangle.In this embodiment, such a design of each welding disk is advantageous for a simple design and easy manufacturing. It should be noted that in this embodiment, each LED chip 20 can be connected in parallel to a Zener chip 50, so that the electrical wiring hidden in each welding disk is also connected to the electrode of the Zener chip 50.

[0386] Specifically, Figure 45a shows a circuit pattern. In this embodiment, the circuit pattern is rotationally symmetrical with its geometric center as the symmetry point (i.e., the circuit pattern is rotated 180° around its rotation center and then superimposed on itself). This simplifies the design of the anode welding machine 111 and the cathode welding machine 112, making manufacturing easier. Furthermore, a first positioning mark 113 is further provided on the circuit pattern to mark the installation position of the LED device 100 during manufacturing or use of the LED device. The first positioning mark 113 forms a rectangular notch on the edge of the circuit pattern; in other examples, the first positioning mark 113 can also form a triangular, protruding, or other shaped notch on the edge of the circuit pattern. The first alignment mark 113 may define the cathode or arrangement direction of the LED device 100. For example, the first alignment mark 113 may define the left side (or bottom) of the LED device 100. When the LED chips 20 are fixed and installed in the LED device 100, the first alignment marks 113 of the LED devices 100 all face left (or bottom) to ensure good consistency during the die bonding process of each LED chip 20 and ensure that each LED device 100 is identical. In another example, the first alignment mark 113 may also mark the cathode direction of the LED chip 20. For example, the cathode direction of each LED chip 20 may be marked through the first alignment mark 113. It should be noted that the presence of the first alignment mark 113 does not strictly imply a symmetrical pattern rotated about the geometric center of the circuit pattern, and the first alignment mark 113 may not necessarily be present on the circuit pattern. For example, the first alignment mark 113 may be located on the package body 30 of the LED device 100. Therefore, the circuit pattern in this embodiment is rotationally symmetrical about its geometric center, and when the first positioning mark 113 is not taken into consideration or is ignored, the circuit pattern is similar to or approximately symmetrical to a pattern that is rotationally symmetrical about its geometric center. As shown in Figure 42, a second positioning mark 114 can also be provided on the back surface of the LED device 100, and in this embodiment, the second positioning mark 114 is provided on the heat dissipation layer 15.The second positioning mark 114 is mainly used to mark the cathode terminal 122, that is, the electrode terminal closest to the second positioning mark 114 is the cathode terminal 122. Because the heat dissipation layer 15 is mainly used for heat dissipation, the heat dissipation layer 15 placed near the second positioning mark 114 does not affect the circuit function of the LED device 100.

[0387] 45 , at least a portion of the anode terminal 121 on the rear surface of each substrate 10 is located behind the corresponding first edge area 13, and at least a portion of the cathode terminal 122 on the rear surface of each substrate 10 is located behind the corresponding second edge area 14. The projection of the anode welding plate 111 on the front surface of each substrate 10 onto the rear surface of the substrate 10 overlaps at least a portion of the anode terminal 121 on the rear surface of the corresponding substrate 10, and the projection of the cathode welding plate 112 on the front surface of each substrate 10 onto the rear surface of the substrate 10 overlaps at least a portion of the cathode terminal 122 on the rear surface of the corresponding substrate 10, and each anode conductive hole 131 and cathode conductive hole 132 are located in the overlapping area. Therefore, the anode welding plate 111 can be conveniently connected to the anode terminal 121 through the corresponding anode conductive hole 131, and the cathode welding plate can be conveniently connected to the cathode terminal 122 through the corresponding cathode conductive hole 132.

[0388] Furthermore, a heat dissipation layer 15 is disposed in the middle area on the rear surface of the substrate 10, with a plurality of anode terminals 121 disposed at linear intervals on one side of the heat dissipation layer 15 and a plurality of cathode terminals 122 disposed at linear intervals on the other side of the heat dissipation layer 15. This arrangement not only improves the heat dissipation performance of the LED device 100, but also positions the anode terminals 121 and cathode terminals 122 in the edge area on the rear surface of the substrate 10, thereby avoiding any influence when the anode terminals 121 and cathode terminals 122 are connected to peripheral circuits.

[0389] In actual application, the LED chip 20 can be a UV-LED chip, and the LED device 100 can use a 6060 / 6565 / 6868 / 7070 size product, with the length of the LED chip 20 being ≦52 mil. It should be understood that the above embodiment is for illustrative purposes only, and the present invention does not limit the specific type of LED chip 20 or the size of the LED 100 device. Of course, in this embodiment, since each LED chip 20 can be independently controlled, there is no limit to the number of LED chips 20; for example, one, two, three, or four LED chips 20 can be used, as long as the size of the LED device 100 is suitable for the actual application.

[0390] The substrate 10 can be made of a ceramic material, such as aluminum nitride ceramic (AlN), gallium nitride ceramic (GaN), aluminum oxide ceramic (Al2O3), or silicon carbide ceramic (SiC). Ceramic materials have excellent insulating and heat dissipation properties, and the first and second circuit layers 11 and 12 can be fabricated on the surface of the substrate 10 using a DPC (Direct Plating Copper) process. The DPC process can fabricate the substrate 10 at a temperature of only 250-350°C, thereby avoiding the adverse effects of high temperatures on the material or circuits and reducing manufacturing costs. Of course, the present invention does not limit the specific material of the substrate 10, as long as it does not affect the use of the LED device 100.

[0391] 46, the first circuit layer 11 preferably includes a first copper metal layer 11a, a first nickel metal layer 11b, and a first gold metal layer 11c, which are stacked together, with the first nickel metal layer 11b having a thickness greater than 3 μm and the first gold metal layer 11c having a thickness greater than 0.05 μm. The first nickel metal layer 11b and the first gold metal layer 11c can improve the corrosion resistance, wear resistance, and oxidation resistance of the first circuit layer 11, thereby reducing damage to the first circuit layer 11 from external environments such as acid, alkali, and humidity, and improving the durability of the first circuit layer 11.

[0392] Preferably, the second circuit layer 12 includes a first copper metal layer, a first nickel metal layer, and a first gold metal layer, which are stacked together, with the first nickel metal layer having a thickness of greater than 3 μm and the first gold metal layer having a thickness of greater than 0.05 μm. The first nickel metal layer and the first gold metal layer can improve the corrosion resistance, wear resistance, and oxidation resistance of the second circuit layer 12, reduce damage to the first circuit layer 12 from external environments such as acid, alkali, and humidity, and improve the durability of the first circuit layer 12.

[0393] Preferably, in this embodiment, the LED chip 20 is a flip chip (although in other embodiments, either a normal chip or a vertical chip can be used). Solder is placed on the first circuit layer 11 on the front of the substrate 10, and the LED chip 20 is then placed on the solder to connect the LED chip 20 to the substrate 10. The electrodes of the LED chip 20 are made of a gold-tin alloy, with the gold content being 80 wt% and the tin content being 20 wt%. The melting point of the gold-tin alloy is 280°C, so the LED chip 20 can be conveniently fixed to the first circuit layer 11.

[0394] In one embodiment, as shown in Figures 40, 41, 43, and 44, an LED device 100 includes a package body 30 and a transparent member 40. The package body 30 is ring-shaped and is installed on the front surface of the substrate 10, surrounding the LED chip 20 and the anode welding plate 111 and cathode welding plate 112 on the front surface of each set of substrates 10. There is a gap between the package body 30 and the circuit patterns formed by the anode welding plate 111 and cathode welding plate 112 to prevent short circuits. The transparent member 40 is connected to the package body 30, and the transparent member 40, package body 30, and the front surface of the substrate 10 form a package cavity that accommodates a first circuit layer 11.

[0395] Specifically, the package body 30 has a mounting groove 31 formed in the inner wall of the package body 30 and penetrating the top of the package body 30, and the bottom surface of the translucent member 40 is welded into the mounting groove 31 using a welding seating aid.

[0396] In one example, the package body 30 is made of a metal material and the light-transmitting member 40 is made of a glass material, and the contact portion between the light-transmitting member 40 and the package body 30 is formed with a gold-tin alloy using a glass plating process and then welded to the package body 30. In the prior art, the light-transmitting member and the package body typically use a semi-inorganic packaging method, which refers to a packaging method in which an organic silicon material is blended with an inorganic material such as glass and the light-transmitting member 40 and the package body 30 are bonded together using an adhesive. However, light such as UV light has a destructive effect on organic materials, and over long periods of use, the adhesive can become ineffective, causing voids between the light-transmitting member 40 and the package body 30 or causing the light-transmitting member 40 to fall off, which can affect the airtightness or durability of the product. In contrast, the light-transmitting member 40 and the package body 30 in the present invention are packaged using an all-inorganic packaging method, and do not use any organic materials that are easily affected by light such as UV light. This reduces the risk of pores forming or the light-transmitting member 40 peeling off, and improves the airtightness and durability of the product. In addition, the use of a welding method makes the product more durable than an adhesive bonding method.

[0397] Preferably, the gold content of the gold-tin alloy is 80 wt % and the tin content is 20 wt %, and the melting point of the gold-tin alloy is 280°C, which further improves the strength of the connection by metal welding.

[0398] Preferably, the mounting groove 31 is a stepped groove, which facilitates installation of the light-transmitting member 40 and prevents the light-transmitting member 40 from loosening or coming off. The mounting groove 31 can be single-layered or multi-layered. For example, if the package body 30 is single-layered (as shown in FIGS. 40 and 43), the bottom surface of the light-transmitting member 40 is attached to the bottom surface of the mounting groove 31 by welding material 41. Alternatively, if the package body 30 is double-layered (not shown), the light-transmitting member 40 is directly attached to the lower staircase, and at least one of the side and / or bottom surfaces of the light-transmitting member 40 is welded to the wall of the upper staircase to secure the light-transmitting member 40 to the package body 30. Of course, although the mounting groove 31 on the package body 30 in this embodiment is stepped, the present invention does not limit the specific shape of the mounting groove 31 on the package body 30. In another embodiment, the mounting groove 31 is not required, and the top of the package body 30 can be plate-shaped, with the bottom of the light-transmitting member 40 directly welded to the top of the package body 30. The present invention does not limit the cross-sectional shape of the package body 30, and for example, the cross-section of the package body 30 can be a hollow circle, square, diamond, etc., as long as the light-transmitting member 40 can be installed inside the package body 30 and the use of the LED device 100 is not affected.

[0399] Preferably, the surface lamination of the package body 30 comprises a third copper metal layer, a third nickel metal layer, and a third gold metal layer, with the third nickel metal layer being greater than 3 μm thick and the third gold metal layer being greater than 0.05 μm thick. The third nickel metal layer and the third gold metal layer can improve the corrosion resistance, wear resistance, and oxidation resistance of the package body 30, reduce damage to the package body 30 from external environments such as acid, alkali, and moisture, and improve the durability of the package body 30.

[0400] The transparent member 40 may be made of quartz, sapphire, or other suitable material. In specific applications, the transparent member 40 may be plate-shaped, arc-shaped, or hemispherical, as long as it does not affect the use of the LED device 100. The present invention does not limit the specific shape of the transparent member 40.

[0401] In this embodiment, the LED device 100 includes a plurality of Zener chips 50, each connected to a set of anode welding disk 111 and cathode welding disk 112, i.e., one LED chip 20 is connected in parallel to one Zener chip 50. The Zener chips 50 reduce the probability of electrostatic discharge damage to the LED chips 20 and protect the LED chips 20. Preferably, the Zener chips 50 are flip chips, and the electrodes of the Zener chips 50 are made of a gold-tin alloy, with the gold content being 80 wt% and the tin content being 20 wt%, and the melting point of the gold-tin alloy being 280°C, making it easy to fasten the Zener chips 50 to the first circuit layer 11.

[0402] In actual manufacturing, first, a welding agent or gold-tin solder (wherein the gold-tin alloy contains 80 wt% of gold and 20 wt% of tin, and the melting point of the gold-tin alloy is 280°C) is placed on the first circuit layer 11 of the substrate 10, and then the LED chip 20 and the Zener chip 50 are placed on the welding agent or gold-tin solder position, and then the LED chip 20 and the Zener chip 50 are welded and fixed to the first circuit layer 11, and then the welding agent or solder is placed in the mounting groove 31. A field (in which the gold content of the gold-tin alloy is 80 wt %, the tin content is 20 wt %, and the melting point of the gold-tin alloy is 280°C) is installed, and then the light-transmitting member 40 is welded and fixed to the package body 30. Finally, the semi-finished product that has gone through the above steps is fixed by eutectic fixing, which can improve the fastening strength. The eutectic process is carried out by putting the semi-finished product into a eutectic furnace, during which the temperature of the eutectic furnace is at least in the range of 280°C to 320°C, and nitrogen is used for protection during the eutectic process to further improve the fastness.

[0403] Example 7b:

[0404] As shown in Figures 51 and 51a, the difference between this embodiment and Example 7a is that the number of LED chips 20 in this embodiment is nine, with a 3*3 matrix distribution. The installation angle of the LED device 100 shown in Figures 51 and 51a is rotated 90° counterclockwise from Figures 41 and 42 described in Example 1, so the anode conductive holes 131 and cathode conductive holes 132 in Figures 51 and 51a are located on both the left and right sides. The anode terminals 121 and cathode terminals 122 on the back of the substrate 10 in Figure 52 are located on both the left and right sides. Because there are nine LED chips 20, there are also nine anode welding plates 111 and nine cathode welding plates 112 on the front of the substrate 10, nine anode terminals 121 and nine cathode terminals 122 on the back of the substrate 10, and nine anode conductive holes 131 and nine cathode conductive holes 132.

[0405] The circuit pattern consisting of the anode welding plate 111 and the cathode welding plate 112 is rotationally symmetrical with its geometric center as the point of symmetry. One end of the nth anode welding plate 111 is connected to the anode of the corresponding nth LED chip 20, and the other end extends to the first edge area 13 to connect to the corresponding nth anode conductive hole 131. One end of the nth cathode welding plate 112 is connected to the cathode of the corresponding nth LED chip 20, and the other end extends to the second edge area 14 to connect to the corresponding nth cathode conductive hole 132, where n is a natural number from 1 to 9.

[0406] The rest is the same as in Example 7a, and will not be described again in this example.

[0407] Example 7c:

[0408] 14 and 15, the difference between the LED device 100 provided by the present invention and Example 2 is that the number of LED chips 20 in this Example is 16, with a 4*4 matrix distribution. Because there are 16 LED chips 20, there are also 16 anode welding plates 111 and 16 cathode welding plates 112 on the front of the substrate 10, 16 anode terminals 121 and 16 cathode terminals 122 on the back of the substrate 10, and 16 anode conductive holes 131 and 16 cathode conductive holes 132.

[0409] The circuit pattern consisting of the anode welding plate 111 and the cathode welding plate 112 is rotationally symmetrical with its geometric center as the point of symmetry. One end of the nth anode welding plate 111 is connected to the anode of the corresponding nth LED chip 20, and the other end extends to the first edge area 13 to connect to the corresponding nth anode conductive hole 131. One end of the nth cathode welding plate 122 is connected to the cathode of the corresponding nth LED chip 20, and the other end extends to the second edge area 14 to connect to the corresponding nth cathode conductive hole 132, where n is a natural number from 1 to 16.

[0410] The rest is the same as in Example 7a, and will not be described again in this example.

[0411] The present invention provides an LED device, the LED device 100 including a substrate 10 and an LED chip 20, the substrate 10 having a front and a rear surface facing each other, a first circuit layer 11 disposed on the front surface of the substrate 10, the first circuit layer 11 including a plurality of sets of anode and cathode welding plates (anode welding plates 111 and cathode welding plates 112), a second circuit layer 12 disposed on the rear surface of the substrate 10, the second circuit layer 12 including a plurality of sets of anode and cathode welding plates (second anode terminals 121 and second cathode terminals 122), each anode terminal 121 being disposed corresponding to each anode terminal 111 and electrically connected to each anode terminal 111, and each cathode terminal 122 being disposed corresponding to each cathode welding plate 112 and electrically connected to each cathode welding plate 112. At least one LED chip 20 is connected to a set of anode welding disk 111 and cathode welding disk 112. The (one or more) LED chips 20 connected to a first anode welding disk 111 and cathode welding disk 112 of a set can be individually lit or closed. In the present invention, a set of anode welding disk 111 and cathode welding disk 112 is connected to at least one LED chip 20, and the LED device 100 can not only package LED chips of different voltages and different wavelengths, but also achieve independent control of a single LED chip or a set of multiple LED chips through different matching external circuits, allowing users to control the effective light emission of each LED chip according to usage scenarios. In the prior art, multiple LED chips are usually connected by fixed circuits, and when the series-parallel connection methods of the LED chips are different, the circuits on the substrate are also different. However, in the present invention, even if the series-parallel connection methods of the LED chips 20 are different, the circuit on the front of the substrate 10 remains the same, and different peripheral circuits can be introduced to realize different series-parallel connection relationships between multiple LED chips 20, thereby improving the compatibility of the LED device, facilitating management of the substrate structure type of the LED device, reducing manufacturing difficulty, time and cost, and broadening the range of product applications and making it more applicable.

[0412] Example 8 includes Example 8a and Example 8b.

[0413] Example 8a:

[0414] The present invention provides an LED device (all LED devices in this embodiment are package structures, specifically LED package structures), and as shown in Fig. 55, the LED device 100 includes a substrate 10, a fence 20, an LED chip 30, an optical window component 40, and an encapsulant 50. The fence 20 has a ring-shaped inner wall, a top, and a bottom, and the bottom of the fence 20 is placed on the front side of the substrate 10, and the LED chip 30 is fixed to the front side of the substrate 10. The fence 20 surrounds the outer periphery of the LED chip 30, and a mounting groove 21 is provided on the inner wall of the fence 20 at least partially above the LED chip 30, which passes through the top of the fence 20. The optical window component 40 includes a transparent member 41 (in this embodiment, the transparent members 41 are transparent caps) and a metal tube cap 42. The metal tube cap 42 is welded to the outside of the transparent member 41, and the transparent member 41 and the metal tube cap 42 are fixed in the mounting groove 21. The bottoms of the transparent member 41 and the metal tube cap 42 are both in contact with the bottom of the mounting groove 21, forming a receiving cavity for receiving the LED chip 30 surrounded by the transparent member 41, the metal tube cap 42, the front of the substrate 10, and the fence 20. The surfaces of the transparent member 41 and the metal tube cap 42 are surrounded by the wall of the mounting groove 21 to form a sealing groove. The sealant 50 is installed in the sealing groove and does not cover the transparent member 41.By welding the optical window component 40 to the fence 20 in the present invention, the possibility of the optical window component 40 peeling off is reduced, and the reliability of the product is improved. Furthermore, by providing protection for the welding position with the sealant 50, the possibility of oxidation and rust at the welding position is reduced. Furthermore, the sealant 50 has the function of filling the pores and cracks at the welding position, so that this installation can further improve the reliability and airtightness of the product. Compared with the single semi-inorganic package and all-inorganic package methods in the prior art, the packaging method combining the organic package and the inorganic package in the present invention has two types. The present invention has the advantage of fully integrating the packaging method. In addition, the bottom of the optical window component 40 is installed flat within the fence 20, so that the operator can accommodate LED chips 30 of different thicknesses by simply changing the height of the fence 20 during operation. Compared to the prior art method in which the metal tube cap has a lip extending from the back to block light rays, the present invention does not require a lip extending from the back, so the luminous efficiency of the product can be guaranteed while effectively reducing the versatility cost and difficulty of product parts, thereby improving the versatility of the metal tube cap 42 and reducing production costs.

[0415] 55, the substrate 10 has a first circuit layer 11 on the front side thereof for connection with the LED chip 30. Preferably, a second circuit layer 12 is provided on the rear side of the substrate 10, and the substrate 10 has conductive holes 13 penetrating the front and rear sides thereof, and the first circuit layer 11 and the second circuit layer 12 are connected through the conductive holes 13, thereby realizing connection between the LED chip 30 and the first circuit layer 11 and the second circuit layer 12. In a specific application, the first circuit layer 11 and the second circuit layer 12 are provided on the substrate 10 by a DPC (Direct Plating Copper) process.

[0416] Preferably, the first circuit layer 11 and the second circuit layer 12 are provided with a first metal layer and a second metal layer, the first metal layer being a nickel layer and the second metal layer being a gold layer, thereby improving the oxidation resistance, corrosion resistance and conductivity of the circuit. The thickness of the first metal layer is greater than 3 μm, and the thickness of the second metal layer is greater than 0.05 μm to ensure the conductivity and oxidation resistance effects.

[0417] Preferably, the fence 20 is welded to the substrate 10 or molded integrally with the substrate 10, which makes manufacturing very convenient. The installation groove 21 allows the optical window component 40 to be installed in the fence 20 in a snap-fit ​​manner, which not only improves the positioning effect of the optical window component 40 but also forms a sealing groove surrounded by the optical window component 40 and the fence 20 to install the sealant 50, thereby improving the airtightness of the LED device 100. The installation groove 21 has a stepped shape, which increases the contact area between the installation groove 21 and the sealant 50, and is the best embodiment for packaging the LED device 100. In other embodiments, the top of the fence 20 may have a flat surface, a single-layer stepped shape, or a multi-layer stepped shape (when the installation groove 21 has a multi-layer stepped structure, the sealant 50 can be replenished with adhesive multiple times to further improve airtightness), but the present invention is not limited thereto and is sufficient as long as the optical window component 40 can be installed in the fence 20.

[0418] The LED chip 30 may be a flip chip, a regular chip, or a vertical chip, and the present invention does not impose any limitations thereon. If the LED chip 30 is a flip chip, a welding additive is first applied to the surface of the substrate 10, and then the LED chip 30 is placed on the welding additive. Finally, the LED chip 30 and the substrate 10 are eutectic-bonded to achieve attachment of the LED chip 30. If the LED chip 30 is a regular chip or a vertical chip, a die-bonding adhesive is applied to the front of the substrate 10, then the LED chip 30 is placed on the die-bonding adhesive and dried at a high temperature to solidify the die-bonding adhesive on the front of the substrate 10. Finally, the LED chip 30 is attached by wire-bonding the electrodes of the LED chip 30 to the circuit on the substrate 10 using wire-bonding equipment.

[0419] Regarding the metal tube cap 42, as shown in Figures 55 to 60, preferably, the metal tube cap 42 can be welded to the fence 20, which improves the strength of the connection and enhances the reliability of the LED device 100.

[0420] In one embodiment, as shown in Figures 55 to 59, the metal tube cap 42 includes a housing part 421, which is shaped like a tube shell and is welded to the outside of the translucent member 41 (transparent cover). Compared to the conventional method in which the metal tube cap 42 is extended to the back and connected to the translucent member 41, the embodiment of the present invention reduces the blocking and reflection of LED light, giving the LED device 100 a better light-emitting efficiency, and by increasing the welding area between the metal tube cap 42 and the translucent member 41, the welding between the metal tube cap 42 and the translucent member 41 becomes stronger.

[0421] Preferably, the inner wall of the tube shell of the housing part 421 may have a shape such as a rectangle (see FIG. 2), a circle (see FIGS. 3 and 4), etc., but the present invention does not limit this as long as it is compatible with the light-transmitting member 41 during actual operation. Similarly, the outer wall of the tube shell of the housing part 421 may have a shape such as a circle (see FIG. 3), a rectangle (see FIGS. 2 and 4), etc., but the present invention does not limit this as long as it is compatible with the LED device 100.

[0422] In one embodiment, as shown in Figures 55 and 59, the bottom of the metal tube cap 42 (i.e., the bottom of the housing part 421) has a welding part 422 extending away from the translucent member 41, and the metal tube cap 42 is welded to the bottom of the mounting groove 21 by the welding part 422, thereby making the connection between the optical window component 40 and the fence 20 more solid. Furthermore, compared with the prior art method in which the metal tube cap 42 extends to the back side to connect to the fence 20, this embodiment of the present invention can reduce the shading and reflection of LED light, which not only gives the LED device 100 a better light-emitting efficiency, but also has a shading effect on the sealant 50 in the sealing groove, thereby reducing the impact of LED light on the sealant 50, extending the time for achieving the airtight effect, and improving the durability of the LED device 100.

[0423] 55 to 60, the transparent member 41 (transparent cover) and the metal tube cap 42 are welded together with a glass solder 60, thereby enhancing the strength of the weld between the transparent member 41 and the metal tube cap 42. Of course, the present invention does not limit the welding material as long as it can weld the transparent member 41 and the metal tube cap 42. Furthermore, the height of the glass solder 60 is higher than the height of the metal tube cap 42, and the metal tube cap 42 covers the surface far away from the substrate 10. This increases the welding area, further improving the strength of the connection between the transparent member 41 and the metal tube cap 42, and improving the transitional smoothness between the metal tube cap 42 and the transparent member 41, making it easier for users to use.

[0424] Preferably, the welding portion 422 abuts against the sidewall of the mounting groove 21, and the glass solder 60 or the metal tube cap 42 forms the sealing groove with the sidewall of the mounting groove 21, allowing the sealant 50 to completely cover the welding portion 422 and improve the airtightness of the LED device 100. Furthermore, the sealant 50 can also cover the glass solder 60 and the metal tube cap 42, thereby better covering the welding positions between the metal tube cap 42 and the transparent member 41 and the welding positions between the metal tube cap 42 and the fence 20, thereby providing protection for the welding positions, reducing the possibility of oxidation and rust at the welding positions, and filling any pores or cracks at the welding positions with the sealant 50, thereby further improving the reliability and airtightness of the product.

[0425] Preferably, the metal tube cap 42 is made of Kovar alloy, which can achieve a tight mechanical connection between two materials within a certain temperature range, thereby improving the connection between the light-transmitting member 41 and the fence 20.

[0426] Regarding the light-transmitting member 41 (transparent cover), as shown in Figures 55, 59 and 60, in one embodiment, the other height of the light-transmitting member 41 is higher than the height of the metal tube cap 42, so that the glass solder 60 can better cover the surface of the metal tube cap 42, improving the flatness of the welding surface between the light-transmitting member 41 and the metal tube cap 42 and improving aesthetics. Furthermore, since the sealant 50 does not cover the front of the light-transmitting member 41, it can avoid affecting the optical effect.

[0427] In one embodiment, the light-transmitting member 41 (transparent cover) can be made of quartz or sapphire, but the present invention does not limit the specific material of the light-transmitting member 41 as long as it has a light-transmitting effect. For example, the light-transmitting member 41 can be made of PMMA (polymethyl methacrylate). In the present invention, the light-transmitting member 41 is square (see FIG. 59) or hemispherical (see FIG. 60). Of course, the shape of the light-transmitting member 41 is not limited to these and can be any shape that does not affect light transmission. For example, it can be rectangular or bulb-shaped.

[0428] The sealant 50 can be understood to be a paint that has a viscous property and can be solidified. When the LED chip 30 is a UV-LED chip, the sealant 50 is a UV-resistant adhesive, which is an adhesive made of materials such as silica gel, epoxy resin, and fluororesin. Of course, the present invention does not limit the specific material of the sealant 50, as long as the service life of the sealant 50 satisfies the service life of the device.

[0429] Example 8b:

[0430] 55 to 57, the present invention provides an LED packaging method, which is used to package the above-mentioned LED device 100 (the LED device 100 in this embodiment is a package structure, specifically an LED package structure). The LED packaging method is as follows.

[0431] In step S101, the substrate 10 is manufactured.

[0432] In step S102, a fence 20 (ring-shaped with a space for mounting the LED chip 30 in the center) having a mounting groove 21 is installed on the substrate 10, and the fence 20 is placed in front of the substrate 10.

[0433] In step S103 , the LED chip 30 is installed on the front surface of the substrate 10 and positioned in the central space of the fence 20 .

[0434] In step S104, the metal pipe cap 42 is welded to the outer periphery of the light-transmitting member 41 (transparent lid).

[0435] In step S105, the metal tube cap 42 and the light-transmitting member 41 are fixed in the mounting groove 21, and the bottoms of the metal tube cap 42 and the light-transmitting member 41 are abutted against the bottom surface of the mounting groove 21, forming a sealing groove surrounded by the surfaces of the metal tube cap 42 and the light-transmitting member 41 and the wall surface of the mounting groove 21.

[0436] Step S106 includes placing a sealant 50 in the sealing groove.

[0437] During the fabrication of the substrate 10, a first circuit layer 11 and a second circuit layer 12 for connection with the LED chip 30 can be provided on the front and back surfaces of the substrate 10, respectively. The first circuit layer 11 and the second circuit layer 12 can be fabricated using a DPC (Direct Plating Copper) process. The second circuit layer 12 is provided on the back surface of the substrate 10, and conductive holes 13 are formed in the substrate 10, connecting the first circuit layer 11 and the second circuit layer 12 through the conductive holes 13. This allows connection between the LED chip 30 and the first and second circuit layers 11 and 12, and also facilitates electrical connection to the LED chip 30.

[0438] In specific applications, a nickel metal layer and a gold metal layer are plated on the first circuit layer 11 and the second circuit layer 12 to prevent the metal layers on the circuit from being washed away or oxidized and to improve conductivity and oxidation resistance, where the nickel metal layer is thicker than 3 μm and the gold metal layer is thicker than 0.05 μm to ensure conductivity and wide participation effects.

[0439] Preferably, the metal tube cap 42 and the translucent member 41 are fixed in the mounting groove 21 by first welding the translucent member 41 to the metal tube cap 42, and then laser welding the metal tube cap 42 into the mounting groove 21 of the fence 20, which can improve the strength of the connection, reduce the possibility of the translucent member 41 falling off, and enhance the reliability of the LED device 100.

[0440] The LED packaging method provided by the present invention fully combines the advantages of both organic and inorganic packaging methods. By welding the optical window component 40 to the fence 20 in the present invention, not only can the possibility of the optical window component 40 falling off be reduced, but also the reliability of the product be improved. Furthermore, by adding a sealant 50 to protect the welding position, the possibility of oxidation and rust at the welding position can be reduced. The sealant 50 has the function of filling any voids or cracks at the welding position, which further improves the reliability and airtightness of the product. Furthermore, by installing the bottom of the optical window component 40 flat within the fence 20 in the present invention, the operator can simply adjust the height of the fence 20 during operation to accommodate LED chips 30 of different thicknesses. This ensures the light emission rate of the product, while effectively reducing the cost and difficulty of versatility of the product components, thereby improving the versatility of the product and facilitating its industrial use.

[0441] In one of the best modes of this embodiment, the step of installing the LED chip 30 on the front surface of the substrate 10 further includes the following steps:

[0442] In step S1031, a welding aid is placed on the front surface of the substrate 10.

[0443] In step S1032, the LED chip 30 is placed on the welding aid.

[0444] Step S1033 includes eutecticizing the LED chip 30 and the substrate 10.

[0445] Preferably, the welding aid is a gold-tin alloy, which has excellent weldability. Of course, in actual manufacturing, the LED chip 30 is directly mounted on the substrate 10 without using a welding aid, and then the LED chip 30 and the substrate 10 are eutectic-formed to reduce manufacturing difficulty and cost.

[0446] Among them, the method of forming a eutectic between the LED chip 30 and the substrate 10 involves placing the substrate 10 on which the LED chip 30 is mounted in a eutectic furnace to form a eutectic. Since the melting point of gold-tin alloy is 280°C, the temperature of the eutectic furnace should be set to at least 280°C to 340°C. During the eutectic process, a vacuum furnace or nitrogen atmosphere is used to reduce the welding voids of the LED chip 30 and prevent the LED chip 30 from being heated to high temperatures.

[0447] Preferably, the welding aid is applied to the front surface of the substrate 10 in a spot application manner. As can be understood, the spot application of the welding aid to the front surface of the substrate 10 can be realized by an artificial or mechanical structure. For example, a smart manipulator can be installed to uniformly apply a fixed amount of welding aid, thereby further improving the welding effect.

[0448] In this embodiment, the flip chip is attached to the substrate 10 by a welding aid, and the LED chip 30 and the substrate 10 are more firmly bonded by eutectic, thereby improving the reliability of the LED device 100 .

[0449] In one of the best modes of this embodiment, the step of mounting the LED chip 30 on the front surface of the substrate 10 further includes the following steps:

[0450] In step S1034, a die bonding adhesive is applied to the front surface of the substrate 10.

[0451] In step S1035, the LED chip 30 is placed on the die bonding adhesive, and the die bonding adhesive is dried at a high temperature to solidify.

[0452] Step S1036 includes connecting the electrodes of the LED chip 30 to the circuit of the substrate 10 by wire bonding using wire bonding equipment.

[0453] The die bonding provides a more solid adhesive bond between the LED chip 30 and the substrate 10. If the LED chip 30 is a normal chip, the die bonding adhesive can be an insulating adhesive or a silver adhesive. If the LED chip 30 is a vertical chip, the die bonding adhesive can be a silver adhesive.

[0454] Preferably, for convenience of wire bonding operation, a nickel metal layer, a palladium metal layer and a gold metal layer can be formed on the first circuit layer 11, of which the nickel metal layer has a thickness of more than 3 μm, the palladium metal layer has a thickness of more than 0.05 μm, and the gold metal layer has a thickness of more than 0.05 μm, to ensure welding, electrical conductivity and anti-oxidation effects.

[0455] In this embodiment, a normal chip or a vertical chip is mounted on the substrate 10 using a die bonding adhesive, and the die bonding adhesive is solidified by drying at high temperature, which makes the connection between the LED chip 30 and the substrate 10 more solid and improves the reliability of the LED chip device 100.

[0456] In one of the best modes of this embodiment, the step of welding the metal pipe cap 42 to the outer periphery of the light-transmitting member 41 further includes the following steps.

[0457] In step S1041, the metal pipe cap 42 is punched.

[0458] In step S1042, the metal tube cap 42 and the light-transmitting member 41 are placed in a positioning mold.

[0459] In step S1043, the molten glass solder 60 is injected into the gap between the metal tube cap 42 and the light-transmitting member 41 by a press device.

[0460] Step S1044 includes placing the metal tube cap 42 and the light-transmitting member 41 in a high-temperature furnace to sinter and mold them.

[0461] In a specific application, the positioning die includes a positioning block, which is used to position the metal pipe cap 42 by abutting it against the light-transmitting member 41, but of course the present invention is not limited to this as long as positioning can be achieved. For example, the positioning die includes positioning grooves for the metal pipe cap 42 and the light-transmitting member 41, and the metal pipe cap 42 and the light-transmitting member 41 are placed in the positioning grooves and abut against the groove surfaces of the positioning grooves to position the metal pipe cap 42 relative to the light-transmitting member 41.

[0462] In this embodiment, the metal tube cap 42 and the translucent member 41 are first welded together with glass solder 60, and then the metal tube cap 42 and the translucent member 41 are sintered to form a solid connection between the metal tube cap 42 and the translucent member 41. This makes it possible to reduce the possibility of the translucent member 41 falling off, and improves the reliability of the LED device 100.

[0463] In one of the best modes of this embodiment, the step of placing the sealant 50 in the sealing groove further includes the following steps:

[0464] In step S1061, the solidified sealant 50 is placed in the sealing groove, and the transparent member 41 is not covered.

[0465] Step S1062 includes solidifying the sealant 50.

[0466] As can be understood, the sealant 50 refers to a coating material that can be solidified or adhered, and may be made of materials such as silica gel, epoxy resin, or fluororesin. However, the present invention does not limit the specific material of the sealant 50. Furthermore, the solidification method of the sealant 50 includes natural solidification, drying, or UV light irradiation solidification. Of course, the solidification method of the sealant 50 is not limited to these, and any method may be used as long as the sealant 50 can be solidified. For example, a sealant 50 that requires drying should use the drying solidification method, and if it can be solidified by direct UV light irradiation, for example, UV light irradiation solidification should be used. Other types of sealants 50 should use the corresponding solidification method.

[0467] In a specific application, the unsolidified sealant 50 is placed in the sealing groove, which can be achieved by an artificial or mechanical structure, for example, by installing a smart manipulator to accurately place the sealant 50 in a predetermined amount, thereby effectively reducing the possibility of the sealant 50 covering the transparent member 41.

[0468] In this embodiment, the sealant 50 is installed in the sealing groove to prevent the translucent member 41 from being covered, thereby reducing light loss and enhancing the light-emitting efficiency of the LED device 100. The sealant 50 also covers the welding position between the metal tube cap 42 and the fence 20, thereby providing protection for the welding position and reducing the possibility of oxidation and rust at the welding position. Furthermore, the sealant 50 can fill any pores or cracks at the welding position, further improving the reliability and airtightness of the product.

[0469] The present invention provides an LED device and an LED packaging method, wherein the LED device 100 includes a substrate 10, a fence 20, an LED chip 30, an optical window component 40, and an encapsulant 50. The LED chip 30 is fixed to the front surface of the substrate 10, and the fence 20 is ring-shaped and has an inner wall, a top, and a bottom. The bottom of the fence 20 is placed on the front surface of the substrate 10 and surrounds the LED chip 30. At least a portion of the inner wall of the fence 20 above the LED chip 30 has a mounting groove 21 that penetrates the top of the fence 20. The optical window component 40 includes a transparent member 41 and a metal tube cap 42. The metal tube cap 42 is welded to the outside of the transparent member 41, and the transparent member 41 and the metal tube cap 41 are fixed in the mounting groove 21. The bottoms of the transparent member 41 and the metal tube cap 42 are both in contact with the bottom of the mounting groove 21. A receiving cavity for receiving the LED chip 30 is formed by the transparent member 41, the metal tube cap 42, the front of the substrate 10, and the fence 20. A sealing groove is formed by the surfaces of the transparent member 41 and the metal tube cap 42 and the wall of the mounting groove 21. The sealant 50 is installed in the sealing groove and does not cover the transparent member 41 (transparent cover).Compared with the single semi-inorganic package and all-inorganic package methods of the prior art, the present invention combines an organic package with an inorganic package to fully combine the advantages of the two packaging methods. The present invention welds the optical window component 40 to the fence 20, thereby reducing the possibility of the optical window component 40 falling off and improving product reliability. The addition of sealant 50 provides protection for the welded position, reducing the possibility of oxidation and rust at the welded position. The sealant 50 also fills any pores or cracks at the welded position, further improving product reliability and airtightness. The present invention also installs the bottom of the optical window component 40 flush within the fence 20, allowing the operator to adjust the height of the fence 20 during assembly to accommodate LED chips 30 of different thicknesses. This ensures the luminous efficiency of the product while reducing the cost and difficulty of product versatility, improving product versatility, and facilitating industrial use. Example 9:

[0470] 61 to 64, an embodiment of the present invention provides an LED device, the LED device including a device body, the device body including a substrate 1, a light emitting element 2, a fence member 3 (all of which are fences in the present invention), and a light-transmitting element 4 (all of which are transparent lids in the present invention), the fence member 3 is connected to the substrate 1 and the light-transmitting element 4, and is surrounded by the substrate 1, the fence 3, and the light-transmitting element 4 to form a package cavity 5, the substrate 1 has a first end face 11 and a second end face 12 facing each other, the light emitting element 2 is mounted on the first end face of the substrate 1 and is located in the package cavity 5, the light emitting element 2 faces the light-transmitting element 4, the fence member 3 has an inner wall, and a reflective layer 32 is disposed on the inner wall of the fence member 3 to reflect light emitted from the light emitting element 2, the first end face 11 of the inner wall of the fence member 3 is inclined in a direction away from the light emitting element 2, and forms an angle of 0<α<90° with the first end face 11. In the LED device provided by the present invention, a light emitting element 2 is installed in the package cavity 5, which is formed by the translucent element 4, the fence member 3, and the substrate 1. The inner wall of the fence member 3 is not perpendicular to the first end face 11, so that the included angle α is formed between the inner wall of the fence member 3 and the first end face 11. The reflective layer 32 is installed on the fence member 3 facing the inner wall surface of the package cavity 5. Light emitted from the light emitting element 2 is reflected by the reflective layer 32, which forms the included angle α with the first end face. Under the action of the reflective layer 32, most of the lateral light rays from the light emitting element 2 are reflected to and emerge from the translucent element 4, effectively reflecting the light to reduce light loss and improve the light emitting efficiency of the LED device.

[0471] Specifically, as shown in Figures 61 to 63, the fence element 3 is cylindrical, the outer size of the upper end of the cylinder is larger than the outer size of the lower end of the cylinder, the inner wall of the fence 3 is installed at an angle relative to the first end face 11, the outer wall of the fence element 3 is perpendicular to the first end face 11, and the vertical cross section of the side wall of the fence element 3 forms a right-angled trapezoid, with the included angle α being the included angle between the hypotenuse and the base of the right-angled trapezoid. Compared to conventional vertical fence elements 3, the fence element 3 having the included angle α relative to the first end face 11 can more effectively reflect the light emitted from the light-emitting element 2 and reduce light loss.

[0472] Specifically, the fence member 3 is made of silicon or quartz, which reduces the cost. As shown in Fig. 62, the fence member 3 has a circular trapezoidal outer shape, or as shown in Fig. 63, the fence member 3 has a rectangular trapezoidal outer shape. The outer shape of the fence member 3 can be set according to specific circumstances, and the inner wall of the fence member 3 has a sloped shape, which improves smoothness.

[0473] Specifically, the reflective layer 32 is a metal layer that is uniformly covered on the inner wall of the fence member 3, or the reflective layer 32 is a metal layer that is covered only on a portion of the fence member 3. By using the metal layer as the reflective layer 32, it has high reflectivity, a simple manufacturing process, and excellent heat resistance and light resistance.

[0474] Specifically, the metal layer is a silver layer or an aluminum layer plated on the inner wall of the fence member 3 by vacuum sputtering or vapor deposition. When the aluminum layer comes into contact with air, it forms dense aluminum oxide, providing stable performance, so the aluminum layer is used here as the reflective layer 32.

[0475] Specifically, the included angle α is between 30° and 60°. According to the Fresnel principle (i.e., a material exhibits different reflection and refraction effects at different distances and angles), when the light emitted from the light emitting element 2 passes through the light-transmitting element 4 perpendicularly, the Fresnel reflection of the light-transmitting element 4 is weak, and the light reflection of the light-transmitting element 4 is also weak. When the light passes through the light-transmitting element 4 non-perpendicularly, the included angle α between the reflective layer 32 and the first end surface 11 is too large or too small. In either case, the Fresnel reflection of the light-transmitting element 4 will be enhanced, that is, the light reflection of the light-transmitting element 4 will also be strengthened. Therefore, the weaker the Fresnel reflection on the light-transmitting element 4, the higher the transmittance of light transmitted through the light-transmitting element 4. When the included angle α between the reflective layer 32 and the first end face 11 is between 30° and 60°, the light transmittance of the light-transmitting element 4 will be high, and within this angle range, the fence member 3 will have a good light reflection effect.

[0476] Specifically, the included angle α is 45°. As shown in Figure 66, ray A is a schematic diagram showing the reflection path of the light ray emitted from the light-emitting element 2 at the translucent element 4 when the included angle α is 75°, ray B is a schematic diagram showing the reflection path of the light ray emitted from the light-emitting element 2 at the translucent element 4 when the included angle α is 60°, ray C is a schematic diagram showing the reflection path of the light ray emitted from the light-emitting element 2 at the translucent element 4 when the included angle α is 45°, ray D is a schematic diagram showing the reflection path of the light ray emitted from the light-emitting element 2 at the translucent element 4 when the included angle α is 30°, and ray E is a schematic diagram showing the reflection path of the light ray emitted from the light-emitting element 2 at the translucent element 4 when the included angle α is 15°. As shown in Figure 67, ray A is a schematic diagram showing the reflection path of the light ray emitted from the light-emitting element 2 on the reflective layer 32 of the fence member 3 when the included angle α is 75°; ray B is a schematic diagram showing the reflection path of the light ray emitted from the light-emitting element 2 on the reflective layer 32 of the fence member 3 when the included angle α is 60°; ray C is a schematic diagram showing the reflection path of the light ray emitted from the light-emitting element 2 on the reflective layer 32 of the fence member 3 when the included angle α is 45°; ray D is a schematic diagram showing the reflection path of the light ray emitted from the light-emitting element 2 on the reflective layer 32 of the fence member 3 when the included angle α is 30°; and ray E is a schematic diagram showing the reflection path of the light ray emitted from the light-emitting element 2 on the reflective layer 32 of the fence member 3 when the included angle α is 15°. As can be seen from the figure, when the included angle α between the reflective layer 32 and the first end face 11 is 45°, the light ray C passes through the light-transmitting element 4 almost perpendicularly, and the Fresnel reflection of the light-transmitting element 4 is minimized and the light transmittance is maximized. However, if the included angle α is greater than or smaller than 45°, the Fresnel reflection of the light-transmitting element 4 will be increased. Therefore, in this embodiment, the included angle α between the reflective layer 32 and the first end face 11 is set to 45° as the best option.

[0477] Specifically, as shown in Figure 61, a substrate surface circuit 13 is installed between the light-emitting element 2 and the first end face 11, and a substrate back circuit 14 is installed on the second end face 12, and the substrate 1 has a conductive hole 15 that penetrates the first end face 11 and the second end face 12, and the substrate surface circuit 13 and the substrate back circuit 14 are electrically connected by the conductive hole 15, making it compact.

[0478] Specifically, the substrates on the substrate surface circuit 13 and the substrate back circuit 14 are plated with a nickel-gold plating layer or a nickel-palladium-gold plating layer, and the substrate surface circuit 13 and the substrate back circuit 14 are manufactured by a copper plating process, and the nickel thickness in the nickel-gold plating layer is greater than 3 μm, and the gold thickness is greater than 0.05 μm, and the nickel thickness in the nickel-palladium-gold plating layer is greater than 3 μm, the palladium thickness is greater than 0.05 μm, and the gold thickness is greater than 0.05 μm, and the substrate surface circuit 13 also has a fence welding layer 17 and a tip welding layer 16 used for welding the light-emitting element 2. At the same time, a metal reflective layer is coated on some areas of the substrate surface circuit 13 other than the welding layer 16 and the fence welding layer 17 by vacuum sputtering or vapor deposition. The metal reflective layer 32 can be an aluminum or silver reflective layer. When the aluminum layer comes into contact with air, it forms dense aluminum oxide, which has stable performance. In addition, the reflectivity of aluminum against ultraviolet rays is more than 90%, so aluminum coating is chosen here.

[0479] Specifically, the light-emitting element 2 is a UV chip with a Philips structure, and the electrode of the UV chip is a gold-tin alloy. The gold-tin alloy has physical characteristics such as a moderate welding temperature and good welding strength, making it suitable for eutectic bonding between the chip and the substrate.

[0480] Specifically, the light-transmitting element 4 can be a glass lens, which is made of quartz or sapphire and therefore resistant to wear. The glass lens can be a flat lens, or a spherical or hemispherical lens. As shown in Fig. 61, both the front and back surfaces of the glass lens are coated with a reflection-increasing film 41 that can enhance ultraviolet transmittance. The reflection-increasing film 41 is made of magnesium fluoride or silicon dioxide and improves the transmittance of ultraviolet light.

[0481] Specifically, as shown in Figure 64, the fence member 3 can be molded integrally with the base plate 1, and the base plate 1 with an integral fence can avoid the risk of the product losing its airtightness due to poor adhesion or welding when the fence is attached or welded to a separate base plate, making it highly practical.

[0482] Specifically, as shown in Figure 61, the upper end of the fence member 3 has a lens welding layer 31 used for welding the light-transmitting element 4, and adhesive or solder (forming the lens welding layer 31) is applied to the contact surface between the upper end of the fence member 3 and the light-transmitting element 4, and the light-transmitting element 4 is fixedly connected to the fence member 3 by the adhesive or solder. Alternatively, as shown in Figure 65, the fence member 3 and the light-transmitting element 4 can be molded integrally, which simplifies the process steps.

[0483] In the LED device provided by the present invention, the light-emitting element 2 is installed in a package cavity 5 surrounded by the light-transmitting element 4, the fence element 3, and the substrate 1, the inner wall of the fence element 3 is installed at an angle with respect to the first end face 11, the inner wall of the fence element 3 and the first end face 11 form the included angle α, and the fence element 3 is installed with the reflective layer 32 facing the inner surface of the package cavity 5, so that the reflective layer 32 can effectively reflect the light emitted from the light-emitting element 2, reduce light loss, and improve the light-emitting efficiency of the LED device.

[0484] Example 10:

[0485] As shown in FIGS. 61 to 70, the manufacturing method (packaging method) of the LED device (LED package structure) provided by the present invention includes the following steps:

[0486] This is the step of fabricating a substrate 1 having a first end surface 11 and a second end surface 12 facing each other.

[0487] This is the step of fixing the light emitting element 2 to the first end surface 11 of the substrate 1 .

[0488] This is the step of installing a fence member 3 (all fences in this embodiment) surrounding the light emitting element 2 on the first end surface 11 of the substrate 1 .

[0489] A reflective surface 6 is installed in the space enclosed by the fence member 3 to reflect a portion of the light emitted from the light-emitting element 2, the reflective surface 6 is tilted outward from the first end face 11 toward the space, and the included angle between the reflective surface 6 and the first end face 11 is set to 0<α<90°.

[0490] In addition, the method includes the steps of fixedly connecting a light-transmitting element 4 (in this embodiment, both are transparent caps) to the fence member 3, facing the light-transmitting element 4 toward the light-emitting element 2, and forming a package cavity 5 surrounded by the light-transmitting element 4, the fence member 3, and the substrate 1. In the method for manufacturing an LED device and the LED device provided by the present invention, a reflective surface 6 is provided in the space formed by the fence member 3 to reflect a portion of the light emitted from the light-emitting element 2, forming a package cavity 5 surrounded by the light-transmitting element 4, the fence member 3, and the substrate 1, and the light-emitting element 2 is positioned in the package cavity 5. The light emitted from the light-emitting element 2 is reflected by the reflective surface 6, which has an included angle α with the first end face 11, thereby improving the light emission efficiency of the LED device and effectively reducing light loss.

[0491] Specifically, the method for manufacturing an LED device and the LED device provided by the present invention will be described in more detail below with reference to the drawings, taking Examples 10a and 10b as examples.

[0492] Example 10a:

[0493] The manufacturing method (packaging method) of the LED device (packaging structure) provided by the present invention includes the following steps.

[0494] This is the step of fabricating a substrate 1 having a first end surface 11 and a second end surface 12 facing each other.

[0495] This is the step of fixing the light emitting element 2 to the first end surface 11 of the substrate 1 .

[0496] This is the step of installing a fence member 3 (all fences in this embodiment) surrounding the light emitting element 2 on the first end surface 11 of the substrate 1 .

[0497] The method includes installing a reflective surface 6 in the space surrounded by the fence member 3, which reflects a portion of the light emitted from the light emitting element 2. In this embodiment 10a, the included angle between the inner wall of the fence member 3 and the first end face 11 is set to 0<α<90°. After the fence member 3 is installed, a reflective layer 32 is installed on the inner wall of the fence member 3, so that the surface of the reflective layer 32 becomes the reflective surface 6.

[0498] The light-transmitting element 4 is fixedly connected to the fence member 3, and the light-transmitting element 4 (in this embodiment, both are transparent lids) is faced toward the light-emitting element 2 to form a package cavity 5 surrounded by the light-transmitting element 4, the fence member 3, and the substrate 1.

[0499] In the LED device provided in Example 10a of the present invention, the light emitting element 2 is installed in a package cavity 5 surrounded by the translucent element 4, the fence element 3, and the substrate 1. The inner wall of the fence element 3 is installed non-perpendicular to the first end face 11, the inner wall of the fence element 3 and the first end face 11 form the reflection angle α, and the fence element 3 is installed with the reflective layer 32 facing the inner wall surface of the package cavity 5. The light emitted from the light emitting element 2 is reflected by the reflective layer 32, which forms an angle α with the first end face. Due to the action of the reflective layer 32, most of the lateral light emitted from the light emitting element 2 is reflected by the translucent element 4 and then exits the translucent element 4, effectively reflecting the light emitted from the light emitting element 2, thereby reducing light loss and improving the light emitting efficiency of the LED device. In this embodiment, the LED device includes the substrate 1, the light emitting element 2, the fence member 3, the light-transmitting element 4, and the package cavity 5, and the light emitting element 2 is positioned in the package cavity 5, which is formed by being surrounded by the light-transmitting element 4, the fence member 3, and the substrate 1. In this embodiment, the package cavity 5 is empty except for the two light emitting elements installed therein. The inner wall of the fence member 3 is installed at an angle relative to the first end face 11, the outer wall of the fence member 3 is perpendicular to the first end face 11, the vertical cross section of the side wall of the fence member 3 forms a right-angled trapezoid, the included angle α between the inner wall of the fence member 3 and the first end face 11 is equal to the included angle between the hypotenuse and the base of the right-angled trapezoid, and as shown in Figure 61, a reflective layer 32 is installed on the inner wall surface of the fence member 3 facing the package cavity 5, and the reflective layer 32 may cover the entire inner wall surface of the fence member 3 or only a part of the inner wall surface of the fence member 3. The reflective layer 32 is a metal layer coated on the inner wall of the fence member 3, which is an aluminum layer, and the thickness of the reflective layer may be greater than 50 nm.The light emitted from the light-emitting element 2 is reflected by the reflective layer 32, which has an included angle α with the first end face 11. Due to the reflective effect of the reflective layer 32, most of the lateral light emitted from the light-emitting element 2 is reflected by the translucent element 4 and exits from the translucent element 4, thereby improving the light-emitting efficiency of the LED device and reducing light loss.

[0500] Specifically, in Example 10a, the included angle α between the reflective layer 32 and the first end face 11 is set to 30° to 60°. Due to the Fresnel principle (i.e., a material exhibits different reflection and refraction effects at different distances and angles), when the light emitted from the light-emitting element 2 passes vertically through the translucent element 4, the Fresnel reflection of the translucent element 4 is weak, and the reflection of the translucent element 4 to the light is also weak. When the light passes through the light-transmitting element 4 non-perpendicularly and the included angle α between the reflective layer 32 and the first end face 11 is too large or too small, the Fresnel reflection of the light-transmitting element 4 is enhanced, that is, the light-transmitting element 4 has a strong reflection. Therefore, the weaker the Fresnel reflection on the light-transmitting element 4, the higher the light transmittance of the light-transmitting element 4. When the included angle α between the reflective layer 32 and the first end face 11 is between 30° and 60°, the light transmittance of the light-transmitting element 4 is relatively high. As shown in Figure 67, ray A is a schematic diagram showing the reflection path of the light ray emitted from the light-emitting element 2 on the reflective layer 32 of the fence member 3 when the included angle α is 75°; ray B is a schematic diagram showing the reflection path of the light ray emitted from the light-emitting element 2 on the reflective layer 32 of the fence member 3 when the included angle α is 60°; ray C is a schematic diagram showing the reflection path of the light ray emitted from the light-emitting element 2 on the reflective layer 32 of the fence member 3 when the included angle α is 45°; ray D is a schematic diagram showing the reflection path of the light ray emitted from the light-emitting element 2 on the reflective layer 32 of the fence member 3 when the included angle α is 30°; and ray E is a schematic diagram showing the reflection path of the light ray emitted from the light-emitting element 2 on the reflective layer 32 of the fence member 3 when the included angle α is 15°.As shown in Figure 70, ray A is a schematic diagram showing the reflection path of the light ray emitted from the light-emitting element 2 in the translucent element 4 when the included angle α is 75°, ray B is a schematic diagram showing the reflection path of the light ray emitted from the light-emitting element 2 in the translucent element 4 when the included angle α is 60°, ray C is a schematic diagram showing the reflection path of the light ray emitted from the light-emitting element 2 in the translucent element 4 when the included angle α is 45°, ray D is a schematic diagram showing the reflection path of the light ray emitted from the light-emitting element 2 in the translucent element 4 when the included angle α is 30°, and ray E is a schematic diagram showing the reflection path of the light ray emitted from the light-emitting element 2 in the translucent element 4 when the included angle α is 15°. As can be seen from the figure, when the included angle α between the reflective layer 32 and the first end face 11 is 45°, the light ray C passes through the light-transmitting element 4 almost perpendicularly, and the Fresnel reflection of the light-transmitting element 4 is minimized and the light transmittance is maximized. However, if the included angle α is greater than or smaller than 45°, the Fresnel reflection of the light-transmitting element 4 will be increased. Therefore, in this embodiment 10a, the included angle α between the reflective layer 32 and the first end face 11 is optimally set to 45°.

[0501] Specifically, in Example 10a, the substrate 1 is a ceramic substrate, and when the substrate 1 is manufactured, as shown in FIG. 61, a substrate surface circuit 13 is provided on a first end surface 11 of the substrate 1, a substrate back surface circuit 14 is provided on a second end surface 12 of the substrate 1, and a conductive hole 15 is provided on the substrate 1 to electrically connect the substrate surface circuit 13 and the substrate back surface circuit 14, and the conductive hole 15 penetrates the first end surface 11 and the second end surface 12, and the substrate on the substrate surface circuit 13 and the substrate back surface circuit 14 is The substrate surface is fabricated using a copper plating process, and a nickel-gold or nickel-palladium-gold plating layer is coated on the substrate surface using an electroless gold plating process to better bond the light emitting device 2 to the substrate 1, with the nickel thickness in the nickel-gold layer being greater than 3 μm and the gold thickness being greater than 0.05 μm, and the nickel thickness in the nickel-palladium-gold plating layer being greater than 3 μm, the palladium thickness being greater than 0.05 μm, and the gold thickness being greater than 0.05 μm. The substrate surface circuit 13 further has a fence welding layer 17 and a tip welding layer 16 used for welding the light emitting device 2. At the same time, a metal reflective layer is coated on some areas of the substrate surface circuit 13 other than the welding layer 16 and the fence welding layer 17 using a vacuum sputtering or evaporation method, and the metal reflective layer can be an aluminum or silver reflective layer. The aluminum layer forms dense aluminum oxide when exposed to air, providing stable performance, and aluminum has an ultraviolet reflectivity of greater than 90%.

[0502] Specifically, in Example 10a, when the light-emitting element 2 is fixedly connected to the first end surface 11 of the substrate 1, the following steps are included: (1) spot-coating a welding additive that serves as a eutectic medium on the tip welding layer 16, and placing the light-emitting element 2 in the welding additive; and (2) placing the substrate 1 with the light-emitting element 2 placed thereon in a eutectic furnace to form a eutectic, thereby firmly bonding the light-emitting element 2 and the substrate 1, wherein the temperature of the eutectic furnace is at least in the range of 300°C to 340°C, and during the eutectic, a nitrogen atmosphere is used for protection, or the eutectic environment is in a vacuum state, to prevent the LED device from being oxidized at high temperatures.

[0503] Specifically, in Example 10a, the light-emitting element 2 is a UV chip with a Philips structure, and the electrode of the UV chip is a gold-tin alloy. The gold-tin alloy has physical characteristics such as a moderate welding temperature and strong welding, making it suitable for eutectic formation between the chip and the substrate.

[0504] Specifically, in Example 10a, as shown in Figure 61, when installing the fence member 3 surrounding the light-emitting element 2 on the first end surface 11 of the substrate 1, the fence member 3 is manufactured in advance, and then adhesive or solder is applied to the contact surface between the fence member 3 and the substrate 1. The fence member 3 is then installed on the first end surface 11 of the substrate 1 to ensure a stable connection between the substrate 1 and the fence member 3. However, it should be noted that in other examples, when the fence member 3 is made of a non-metallic material and is to be welded with solder, a metallization treatment must be performed on the lower end contact surface of the fence member 3 in advance, and the metallization treatment is a gold-tin alloy plating treatment.

[0505] Specifically, in Example 10a, as shown in Figures 61 and 62, the outer shape of the fence member 3 is a circular trapezoid, or as shown in Figures 61 and 63, the outer shape of the fence member 3 is a square trapezoid. The shape of the fence member 3 can be manufactured according to actual needs, and the outer shape of the fence member 3 can be installed according to specific circumstances. The inner wall of the fence member 3 is sloped, which facilitates light reflection.

[0506] Specifically, in Example 10a, as shown in Figure 64, the fence member 3 can be molded integrally with the base plate 1, and the base plate 1 with an integral fence can avoid the risk of the product losing its airtightness due to poor adhesion or welding when the fence is attached or welded to a separate base plate, which is highly practical.

[0507] 61, the upper end of the fence member 3 has a lens welding layer 31 used for welding the light-transmitting element 4, and adhesive or solder (forming the welding layer 31) is applied to the contact surface between the upper end of the fence member 3 and the light-transmitting element 4, and the fence member 3 is fixedly connected to the light-transmitting element 4 by adhesive or solder. Alternatively, as shown in FIG. 65, the fence member 3 and the light-transmitting element 4 can be integrally molded, simplifying the process steps. Specifically, in Example 10a, as shown in FIG. 61, both the front and back of the light-transmitting element 4 are coated with a reflection-enhancing film 41 used to improve light transmittance. The reflection-enhancing film 41 can be made of magnesium fluoride or silicon dioxide, which effectively improves ultraviolet light transmittance.

[0508] Specifically, in Example 10a, the fence member 3 can be made of silicon or quartz material, and the light-transmitting element 4 can be a glass lens, which can be made of quartz or sapphire material and has excellent wear resistance.

[0509] Specifically, in embodiment 10a, the glass lens can be a flat lens, or can be a spherical or hemispherical lens to meet different light requirements.

[0510] Specifically, in Example 10a, the fence member 3 and the substrate 1 on which the light-transmitting element 4 is installed can be tightly bonded by high-temperature drying or light solidification, which is highly reliable.

[0511] Example 10b:

[0512] The method (packaging method) for fabricating an LED device (packaging structure) provided by the present invention 10b includes the following steps:

[0513] This is the step of fabricating a substrate 1 having a first end surface 11 and a second end surface 12 facing each other.

[0514] This is the step of fixing the light emitting element 2 to the first end surface 11 of the substrate 1 .

[0515] This is the step of installing the fence member 3 (all fences in this embodiment) surrounding the light emitting element 2 on the first end surface of the substrate 1.

[0516] A reflective surface 6 is installed in the space surrounded by the fence member 3 to reflect some of the light rays emitted from the light emitting element 2. Specifically, in this embodiment, a reflective ring 7 is installed in the space surrounded by the fence member 3, the reflective ring 7 surrounds the light emitting element 2, the lower end of the reflective ring 7 is brought close to the substrate 1, the lower end of the reflective ring 7 is made larger than the upper end of the reflective ring 7, and the reflective ring 7 is directed toward the inner wall of the light emitting element 2 to form the reflective surface 6.

[0517] In addition, the method includes a step of fixedly connecting a light-transmitting element 4 (in this embodiment, both are transparent lids) to the fence member 3, facing the light-transmitting element 4 toward the light-emitting element 2, and forming a package cavity 5 surrounded by the light-transmitting element 4, the fence member 3, and the substrate 1.

[0518] The LED device provided in Example 10b of the present invention has a reflective ring 7 for reflecting light rays, and the reflective ring 7 is installed in the package cavity 5 surrounded by the translucent element 4, the fence member 3 and the substrate 1. The inner wall of the reflective ring 7 is installed at an angle with respect to the first end face 11, and an included angle α is formed between the inner wall of the reflective ring 7 and the first end face 11. The light rays emitte...

Claims

1. A package structure comprising: a substrate; a light-emitting element; and a fence connected to a transparent lid and a base, wherein the light-emitting element is an LED chip; the substrate has a front surface and a back surface facing each other; the light-emitting element is fixed to the front surface of the substrate; and the transparent lid is connected to the fence.

2. 2. The package structure of claim 1, wherein the fence is surrounded by a transparent cover and the substrate to form a mounting area, the fence includes an outer retaining wall and an inner retaining wall, and a groove is formed between the outer retaining wall and the inner retaining wall, the package structure further includes a sealing member installed in the groove, the transparent cover covers the inner retaining wall and the mounting area, and the transparent cover is inserted and connected into the groove and is in contact with the sealing member, the package structure further includes a protective member installed on the edge of the transparent cover, and the protective member has a sealing portion used to seal the gap between the transparent cover and the outer retaining wall, and an abutment portion connected to the sealing portion and abutting the upper end of the transparent cover.

3. 3. The packaging structure of claim 2, wherein a plurality of the protective members are installed, the plurality of protective members cover a portion of the surface of the transparent lid, and the distance between the end faces of the two opposing abutment portions on the upper surface of the transparent lid is smaller than the distance between the two opposing side walls of the inner retaining wall facing the grooves.

4. The packaging structure described in claim 2, characterized in that the sealing member has an inner sealing portion used to join the inner retaining wall and the inside of the transparent lid, an outer sealing portion used to join the outer retaining wall and the outside of the transparent lid, and a lateral sealing portion used to join the bottom of the groove and the bottom of the transparent lid, one end of the lateral sealing portion being connected to the outer sealing portion and the other end of the lateral sealing portion being connected to the inner sealing portion, and the inner sealing portion, the outer sealing portion, and the lateral sealing portion being surrounded by the inner sealing portion, the lateral sealing portion, and the lateral sealing portion to form an installation cavity used to install the transparent lid.

5. The package structure of claim 4, characterized in that the transparent lid includes a top lid portion and a vertical portion connected to the outer periphery of the top lid portion, one side of the inner sealing portion is joined to the inside of the vertical portion, the other side of the inner sealing portion is joined to the side of the inner retaining wall, and the vertical portion is joined to the horizontal sealing portion.

6. The packaging structure described in claim 2, characterized in that the protective member further includes a fixing portion connected to the sealing portion and fixedly connected to the outer retaining wall, the fixing portion overlapping a portion of the outer retaining wall, and the fixing portion overlapping a portion of the upper end surface or the side surface facing the groove of the outer retaining wall.

7. The packaging structure described in claim 6, characterized in that when the height of the inner retaining wall is a first height and the height of the outer retaining wall is a second height, the first height is higher than the second height, the fixing portion is fixed to one end of the sealing portion, and the abutment portion is connected to the other end of the sealing portion.

8. The packaging structure described in claim 6, characterized in that when the height of the inner retaining wall is a first height and the height of the outer retaining wall is a second height, the first height is higher than the second height, the outer side of the sealing portion is joined to the outer retaining wall, and the fixing portion is respectively connected to the sealing portion and the abutment portion.

9. 2. The package structure of claim 1, wherein a welding layer is installed on the bottom of the transparent cover, a first circuit layer is installed on the front surface of the substrate, the first circuit layer includes a first circuit pattern used for connecting with the welding layer, and the first circuit layer further includes a welding disk used for welding to the LED chip, a sealed package cavity is formed between the transparent cover and the substrate, and the LED chip is installed in the package cavity and welded to the welding disk.

10. The welding layer is a metal layer formed on the bottom of the transparent cover by plating, and the first circuit pattern is a metal layer formed on the front surface of the substrate by plating; or 10. The package structure of claim 9, wherein the welding layer is a glass solder formed on the bottom of the transparent cover, and the first circuit pattern is a metal layer formed on the front surface of the substrate in a plating manner.

11. 10. The package structure according to claim 9, wherein the first circuit pattern has a sealed shape, and the welding layer and the first circuit pattern are joined to form a sealed welding area.

12. 10. The package structure of claim 9, wherein a second circuit layer is installed on at least one of the rear surface and the interior of the substrate, and the welding plate is connected to the second circuit layer through a conductive hole installed on the substrate.

13. 2. The package structure of claim 1, wherein the fence is ring-shaped and has an inner wall, a top, and a bottom, the bottom of the fence is placed on the front of the substrate, the fence surrounds the outer periphery of the LED chip, and the inner wall of the fence is located above the LED chip. A mounting groove is provided at least partially through the top of the fence, the mounting groove has a groove bottom and groove side walls. The package structure further includes a positioning block installed in the mounting groove, a bottom surface of the transparent cover abuts against the groove bottom of the mounting groove and faces the LED chip, side surfaces of the transparent cover abut against the positioning blocks, and the side surfaces of the transparent cover, the groove bottom, and groove side walls of the mounting groove form a sealing groove. The package structure further includes a sealant installed in the sealing groove and covering the transparent cover.

14. The package structure according to claim 13 , wherein the plurality of positioning blocks are arranged at equal intervals along the circumferential direction of the sealing groove.

15. 14. The packaging structure of claim 13, wherein the bottom of the positioning block is installed on the bottom surface of the mounting groove, the positioning block has a first side surface and a second side surface facing each other, the first side surface of the positioning block abuts against a side wall of the mounting groove, and the outer periphery of the transparent cover abuts against the second side surface of the positioning block.

16. The package structure according to claim 13, wherein the bottom of the transparent cover is placed on the groove bottom surface of the mounting groove, and the top of the transparent cover is higher than the height of the positioning block.

17. The package structure according to claim 13 , wherein the height of the positioning block is lower than the top of the mounting groove, and the sealant covers the top of the positioning block.

18. 14. The package structure of claim 13, wherein a first circuit is provided on the front surface of the substrate, the LED chip is connected to the first circuit, a second circuit is provided on the back surface of the substrate, a conductive hole is provided on the substrate through the front and back surfaces, and the first circuit and the second circuit are connected by the conductive hole.

19. 14. The package structure of claim 13, wherein a first circuit layer is disposed on a front surface of the substrate, the light emitting device is disposed on the front surface of the substrate and the light emitting device is connected to the first circuit layer, the fence is disposed on the front surface of the substrate and includes a first portion and a second portion disposed on the front surface of the substrate with a gap therebetween, the first portion and the second portion respectively serve as anode conductors and cathode conductors connected to an electrical signal detection module, and the anode conductors and cathode conductors are disposed around the light emitting device and the first circuit layer, and the transparent cover includes a light-transmitting conductive layer, a diffusion layer and a light-transmitting layer which are stacked, and the light-transmitting conductive layer is connected to the anode conductor and the cathode conductor.

20. the transparent conductive layer is made of indium tin oxide, the fence is separated by a partition groove, the anode conductor and the cathode conductor are arranged symmetrically with respect to the partition groove so as to face each other, an insulating material is arranged in the partition groove, the anode conductor is shaped like a "Π", the cathode conductor is shaped like an inverted "Π", the opening of the anode conductor is arranged to face the opening of the cathode conductor, at least a portion of the light emitting element extends into at least one of the opening of the anode conductor and the opening of the cathode conductor, a first mounting groove is formed on the top of the anode conductor, and the first mounting groove is formed on at least a part of the side wall of the anode conductor above the light emitting element.

20. The package structure of claim 19, wherein: a first mounting groove is disposed on the top of the anode conductor and penetrates the top of the cathode conductor; a second mounting groove is disposed on the top of the cathode conductor, the second mounting groove is disposed on at least a portion of a side wall of the cathode conductor above the light emitting device and penetrates the top of the cathode conductor; the transparent cover is fixed to the first mounting groove and the second mounting groove, the transparent cover has a bottom surface facing the light emitting device; the diffusion layer covers the entire bottom surface of the translucent layer; the translucent conductive layer covers the entire bottom surface of the diffusion layer, and the bottom surface of the translucent conductive layer is adhered to the bottom surfaces of the first mounting groove and the second mounting groove with a conductive adhesive.

21. 21. The package structure of claim 19, wherein a second circuit layer is disposed on the back surface of the substrate, the second circuit layer is electrically connected to the first circuit layer, the substrate is provided with a first conductive hole and a second conductive hole penetrating the substrate, the anode conductor is connected to the second circuit layer through the first conductive hole, and the cathode conductor is connected to the second circuit layer through the second conductive hole, a driving integrated circuit is disposed on the first circuit layer, the light emitting element is a VCSEL laser chip, and the driving integrated circuit is connected to the VCSEL laser chip and the light-transmitting conductive layer.

22. The fence and the substrate support structure, the substrate is installed in the fence, the transparent cover is installed in front of the substrate and covers the LED chip; The package structure further includes a fluorescent material, the fluorescent material being disposed on at least one of the support structure and the transparent cover, and the fluorescent material is used for emitting visible light by fluorescent reaction when illuminated by light emitted from the LED chip. The LED package structure according to claim 1 .

23. 23. The package structure of claim 22, wherein the transparent lid encases the LED chip, the fence is ring-shaped and has an inner wall, a top, and a bottom, the bottom of the fence is placed in front of the substrate, the fence surrounds the outer periphery of the LED chip, and a receiving cavity is formed by being surrounded by the transparent lid, the fence, and the substrate.

24. The package structure of claim 23, wherein the transparent lid is adhered to the fence with an adhesive mixed with the fluorescent material, or the fluorescent material is placed in the receiving cavity.

25. 24. The package structure of claim 23, wherein an inner wall of the fence has a mounting groove positioned above the LED chip and at least a portion of which penetrates the top of the fence, and at least one of the bottom and side of the transparent cover is fixed to the mounting groove with an adhesive mixed with the phosphor material.

26. 26. The package structure of claim 22, wherein the fluorescent material is a fluorescent layer, the fluorescent layer is ring-shaped, bar-shaped, circular or polygonal, and the fluorescent material is installed on the front surface of the substrate or on the inner wall of the fence.

27. 26. The package structure of claim 22, wherein a first circuit is provided on the front surface of the substrate, a ring-shaped groove is provided in the first circuit, and the fluorescent material is provided in the ring-shaped groove.

28. 24. The package structure of claim 23, wherein the fence is a metal tube cap, the upper and lower ends of which have openings, the bottom of the metal tube cap is placed on the upper surface of the substrate, the transparent cover is connected to the upper end of the metal tube cap and seals the upper opening, and the fluorescent material is installed inside the metal tube cap on the front side of the substrate.

29. The substrate is a multi-layer substrate, and the multi-layer substrate comprises: a first substrate having a front surface and a back surface facing each other, a first circuit layer disposed on the front surface, a second circuit layer disposed on the back surface, the first circuit layer and the second circuit layer being electrically connected, the first circuit layer including a first circuit anode and a first circuit cathode; a ring-shaped package body disposed on the front surface of the first substrate and surrounding the periphery of the first circuit anode and the first circuit cathode; 2. The package structure according to claim 1, further comprising: a second substrate, the second substrate being connected to the second circuit layer on the back surface of the first circuit by a welding process, the second substrate having a heat dissipation layer on its back surface.

30. 30. The package structure of claim 29, wherein the first circuit layer further includes an electrode anode and an electrode cathode, the electrode anode and the electrode cathode being disposed around the outer periphery of the package body; the second circuit layer includes second circuit anodes and second circuit cathodes spaced apart and insulated from each other; the first substrate is provided with conductive holes, the conductive holes including at least two first conductive holes and at least two second conductive holes, the openings of the at least two first conductive holes on the front surface of the first substrate being located inside and outside the package body, respectively; the openings of the at least two second conductive holes on the front surface of the first substrate being located inside and outside the package body, respectively; a conductive material is disposed in each of the first conductive holes and second conductive holes; the second circuit anode is connected to the electrode anode and the first circuit anode through the at least two first conductive holes, respectively; and the second circuit cathode is connected to the electrode cathode and the first circuit cathode through the at least two second conductive holes, respectively.

31. 31. The package structure of claim 30, wherein a welding layer is provided between the first substrate and the second substrate, connecting the first substrate and the second substrate, the welding layer including a first welding portion and a second welding portion, the first welding portion and the second welding portion being welded to the second circuit anode and the second circuit cathode, respectively, and the first welding portion and the second welding portion being insulated.

32. 32. The package structure of claim 31, wherein the first welding portion and the second circuit anode have the same shape and size, the second welding portion and the second circuit cathode have the same shape and size, and the first substrate and the second substrate are both ceramic substrates.

33. 32. The packaging structure of claim 31, wherein the welding layer further includes a third welding portion, the third welding portion having a sealed ring shape and surrounding the outer periphery of the second circuit layer, and the third welding portion and the second circuit layer are isolated and insulated from each other.

34. 34. The package structure of claim 33, wherein an insulating material is filled in a gap between the second circuit anode and the second circuit cathode, and an insulating material is filled in a gap between the third welding portion and the second circuit layer.

35. 34. The package structure of claim 33, wherein the minimum spacing between the third weld and the second circuit layer is greater than 0.2 mm, the minimum spacing between the second circuit anode and the second circuit cathode is greater than 0.2 mm, the minimum spacing between the first weld and the second weld is greater than 0.2 mm, and the hole diameter of each of the first conductive holes and second conductive holes is 0.09 mm to 0.15 mm.

36. 36. The package structure of claim 29, wherein the heat dissipation layers are a copper heat dissipation layer, a nickel heat dissipation layer, and a gold heat dissipation layer that are stacked together, the copper heat dissipation layer having a thickness of 50 to 300 μm, the nickel heat dissipation layer having a thickness greater than 3 μm, and the gold heat dissipation layer having a thickness greater than 0.05 μm.

37. 37. An LED device comprising the multi-layer substrate according to claim 29, further comprising a light-transmitting member and an LED chip, wherein the light-transmitting member is connected to the package body, the LED chip is installed on a front surface of the first substrate and is electrically connected to the first circuit anode and the first circuit cathode, and the light-transmitting member, the package body, and the front surface of the first substrate form a package cavity that seals the LED chip.

38. a first circuit layer is disposed on the front surface of the substrate, the first circuit layer including a plurality of sets of anode welding disks and cathode welding disks; a second circuit layer is disposed on the rear surface of the substrate, the second circuit layer including anode terminal and cathode terminal sets corresponding to the plurality of sets of anode welding disks and cathode welding disks, the anode terminals and cathode terminals of one set being symmetrically disposed on opposite sides of the rear surface of the substrate, the anode terminals being linearly spaced apart and disposed at equal distances on the same side of the rear surface of the substrate; the cathode terminals being linearly spaced apart and disposed at equal distances on the other side of the rear surface of the substrate and facing the anode terminals one by one; each anode welding disk being electrically connected to one anode terminal through an anode conductive hole penetrating the substrate; and each cathode welding disk being electrically connected to one cathode terminal through a cathode conductive hole penetrating the substrate; 2. The package structure according to claim 1, wherein the LED chips are arranged in a plurality of pieces, and each of the LED chips is electrically connected to a set of the anode welding plate and the cathode welding plate.

39. 39. The package structure of claim 38, wherein the LED chips are flip chips, the number of the LED chips is n*n, where n is a natural number greater than or equal to 2, and the LED chips are arranged in a rectangular matrix.

40. the anode welding disks and the cathode welding disks form a rectangular circuit pattern on the front surface of the substrate, the LED chips are uniformly distributed on the circuit pattern, the circuit pattern includes a first edge area and a second edge area respectively located on opposite sides of the circuit pattern, each of the anode conductive holes is located in the first edge area, each of the cathode conductive holes is located in the second edge area, one end of the nth anode welding disk is connected to the anode of the corresponding nth LED chip, and the other end extends to the first edge area to connect with the corresponding nth anode conductive hole; one end of the nth cathode welding disk is connected to the cathode of the corresponding nth LED chip, and the other end extends to the second edge area to connect with the corresponding nth cathode conductive hole; The projection of each of the anode welding plates on the rear surface of the substrate has at least a partial overlapping area with a corresponding anode terminal, and the projection of each of the cathode welding plates on the rear surface of the substrate has at least a partial overlapping area with a corresponding cathode terminal, and each of the anode conductive holes and cathode conductive holes is located in each of the overlapping areas.

40. The package structure of claim 39.

41. 41. The package structure of claim 40, wherein the circuit pattern has a gap separating the anode welding plate and the cathode welding plate on the front of each substrate, the gap being at least 0.2 mm, the anode conductive holes are linearly arranged, the cathode conductive holes are linearly arranged, and the anode conductive holes and the cathode conductive holes are symmetrically arranged so as to correspond to one another.

42. 42. The package structure according to claim 38, further comprising a package body disposed on the front surface of the substrate and a light-transmitting member disposed on the package body, the package body being ring-shaped and surrounding the LED chip and each set of anode and cathode welding plates, and the light-transmitting member covering the top of the LED chip.

43. 43. The package structure of claim 42, wherein the package body has a mounting groove formed on an inner wall of the package body and penetrating a top of the package body, the bottom surface of the translucent member is welded onto the mounting groove with a welding aid, and the substrate is a ceramic substrate.

44. 42. The package structure of claim 38, further comprising a heat dissipation layer disposed in the middle area of ​​the rear surface of the substrate, the anode terminals being spaced apart from one another on one side of the heat dissipation layer, and the cathode terminals being spaced apart from one another on the other side of the heat dissipation layer.

45. 41. The package structure of claim 40, wherein the circuit pattern is rotationally symmetrical about its geometric center, and a first positioning mark is provided on the circuit pattern.

46. 42. The package structure of claim 38, wherein each of the LED chips is connected in parallel to one Philips-structure Zener chip, and each of the Zener chips is electrically connected to one set of the anode welding plate and the cathode welding plate.

47. 42. The package structure of claim 38, wherein at least one of the first circuit layer and the second circuit layer includes a first copper metal layer, a first nickel metal layer, and a first gold metal layer that are stacked together, the first nickel metal layer having a thickness greater than 3 μm, and the first gold metal layer having a thickness greater than 0.05 μm.

48. 2. The package structure of claim 1, wherein the fence is ring-shaped and has an inner wall, a top, and a bottom, the bottom of the fence being placed on the front surface of the substrate, the fence surrounding the outer periphery of the LED chip, and the inner wall of the fence having a mounting groove penetrating the top of the fence located at least partially above the LED chip; the package structure includes an optical window component, the optical window component including a transparent lid and a metal tube cap, the metal tube cap being welded to the outer periphery of the transparent lid and fixed in the mounting groove, and the bottoms of the transparent lid and the metal tube cap both abut against the bottom surface of the mounting groove; an accommodating cavity for accommodating the LED chip is formed by the transparent lid, the metal tube cap, the front surface of the substrate, and the fence, and a sealing groove is formed by the surface of the transparent lid or the metal tube cap and the wall surface of the mounting groove; the package structure further includes a sealant, which is placed in the mounting groove.

49. 49. The package structure of claim 48, wherein the height of the transparent lid is greater than the height of the metal tube cap.

50. The transparent lid and the metal tube cap are welded together with glass solder, 50. The package structure of claim 48 or 49, wherein the height of the glass solder is higher than the height of the metal tube cap and covers the surface of the metal tube cap away from the substrate.

51. 51. The packaging structure of claim 50, wherein the bottom of the metal tube cap extends away from the transparent lid to form a weld, and the metal tube cap is welded to the mounting groove by the weld.

52. The packaging structure of claim 51, wherein the welding portion abuts against the groove sidewall of the mounting groove, the glass solder or metal tube cap and the groove sidewall of the mounting groove form the sealing groove, and the sealant covers the glass solder and the metal tube cap.

53. 2. The package structure of claim 1, further comprising: a device body including a substrate, a light emitting device, the fence, and a transparent lid; the fence is connected to the substrate and the transparent lid, and the substrate, the fence, and the transparent lid form a package cavity surrounded by the substrate, the fence, and the transparent lid; the substrate has a first end face and a second end face facing each other; the light emitting device is mounted on the first end face of the substrate and is located within the package cavity, the light emitting device facing the transparent lid; the fence has an inner wall, on which a reflective layer is plated to reflect light emitted from the light emitting device, the inner wall is inclined from the first end face toward a direction away from the light emitting device, and forms an included angle of 0<α<90° with the first end face.

54. 54. The packaging structure of claim 53, wherein the fence is cylindrical, the outer size of the upper end of the cylinder is larger than the outer size of the cylinder, the inner wall of the fence is installed at an angle relative to the first end face, the reflective layer is a metal layer that uniformly covers the inner wall of the fence, or the reflective layer is a metal layer that covers only a portion of the inner wall of the fence, the metal layer is an aluminum layer, and the included angle is 30° to 60°, or the included angle is 45°.

55. 54. The package structure of claim 53, wherein a substrate surface circuit is installed between the light-emitting element and the first end face, a substrate back circuit is installed on the second end face, the substrate has a conductive hole penetrating the first end face and the second end face, the substrate surface circuit and the substrate back circuit are electrically connected by the conductive hole, and the substrate surface circuit and the substrate back circuit are coated with a nickel-gold plating layer or a nickel-palladium-gold plating layer on the substrate surface circuit and the substrate back circuit.

56. 54. The package structure of claim 53, wherein the transparent cover is a glass lens, which is a flat lens or a spherical or hemispherical lens, and the surface of the glass lens is coated with a reflection-enhancing film to improve ultraviolet transmittance.

57. The package of the package structure according to claim 53 comprises: fabricating a substrate having a first end surface and a second end surface facing each other; fixing a light emitting device to a first end surface of the substrate; providing a fence on a first end surface of the substrate to surround the light emitting device; a reflecting surface that reflects a portion of the light emitted from the light emitting device is disposed within the space enclosed by the fence, the reflecting surface being inclined outward from the first end surface toward the space, and an included angle between the reflecting surface and the first end surface being set to 0<α<90°; and a step of fixedly connecting a transparent lid to the fence and facing the light-emitting element so that the transparent lid is surrounded by the light-transmitting element, the fence, and the substrate to form a package cavity.

58. 58. The packaging method for a packaging structure of claim 57, wherein the included angle between the inner wall of the fence and the first end face is set to 0<α<90°, and after the fence is installed, a reflective layer is coated on the inner wall, and the surface of the reflective layer becomes the reflective surface.

59. A packaging method for a package structure described in claim 57 or claim 58, characterized in that before a transparent cover is fixedly connected to the fence, the fence is installed, and then a reflective ring is installed in the space surrounded by the fence, the lower end of the reflective ring is brought close to the substrate, the lower end of the reflective ring is made smaller than the upper end of the reflective ring, the outer shape of the reflective ring is made into a circular trapezoid or a square trapezoid, and the reflective ring is faced toward the light-emitting element, so that the inner wall becomes the reflective surface.

60. A packaging method for a package structure as described in claim 57, characterized in that a tube cap member is installed as the fence, the tube cap member is integrally molded from a metal material, and has a tube cap sheet and a tube cap side wall integrally connected to the tube cap sheet, and the tube cap sheet is bonded and connected to the substrate, so that the inner wall of the tube cap member becomes the reflective surface.

61. 61. The packaging method for a packaging structure according to claim 60, wherein the outer shape of the tube cap side wall is a circular trapezoid or a square trapezoid, the outer size of the lower end of the tube cap side wall is smaller than the outer size of the upper end of the tube cap side wall, and the included angle between the tube cap side wall and the first end face is set to 0<α<90°.

62. 62. The packaging method for a packaging structure of claim 61, wherein the outer size of the tube cap sheet is larger than the outer size of the upper end of the tube cap side wall, and the difference in outer size between the tube cap sheet and the upper end of the tube cap side wall is ≧0.2 mm.

63. 62. A packaging method for a package structure described in any one of claims 57 to 61, characterized in that, when manufacturing the substrate, a substrate surface circuit is installed on a first end surface of the substrate, a substrate back circuit is installed on a second end surface of the substrate, a conductive hole is opened in the substrate to connect the substrate surface circuit and the substrate back circuit, and the conductive hole penetrates the first end surface and the second end surface.

64. 62. The packaging method for a package structure according to any one of claims 57 to 61, wherein the transparent cover is a glass lens, and a reflection enhancing film is provided on the surface of the glass lens to improve light transmittance.

65. 62. The packaging method of claim 57, wherein the included angle between the reflecting surface and the first end surface is set to 30° to 60°.

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