Adjustable base

Abstract

A pedestal assembly for a substrate processing system configured to perform bulk deposition on a substrate is configured to be raised and lowered. The pedestal assembly includes a stem portion, a base plate portion disposed on the stem portion, and a pumping ring assembly. The base plate portion is configured to support the substrate. The pumping ring assembly is disposed around the base plate portion and includes a lower pumping ring and an upper pumping ring disposed above the lower pumping ring. The pumping ring assembly is configured to define an annular volume such that an annular volume radially outward from the pumping ring assembly is separated by the pumping ring assembly from a volume defined below the base plate portion of the pedestal assembly.

Description

[Technical Field]

[0001] [CROSS-REFERENCE TO RELATED APPLICATIONS] This application claims the benefit of U.S. Provisional Patent Application No. 63 / 413,837, filed October 6, 2022. The above-referenced applications are incorporated herein by reference in their entireties.

[0002] FIELD OF THE DISCLOSURE The present disclosure relates to pedestal designs for substrate processing systems. [Background technology]

[0003] The background discussion provided herein is intended to present the contents of the present disclosure generally. Work by the currently named inventors within the scope of what is described in this Background section, as well as aspects of the description that may not otherwise be considered prior art at the time of filing, are not admitted, expressly or impliedly, as prior art against the present disclosure.

[0004] Substrate processing tools typically have multiple stations for performing deposition, etching, and other processes on substrates, such as semiconductor wafers. Examples of processes that may be performed on a substrate include chemical vapor deposition (CVD) processes, chemically enhanced plasma vapor deposition (CEPVD) processes, plasma-enhanced chemical vapor deposition (PECVD) processes, sputtering physical vapor deposition (PVD) processes, atomic layer deposition (ALD), and plasma-enhanced ALD (PEALD). Further examples of processes that may be performed on a substrate include etching processes (e.g., chemical etching, plasma etching, reactive ion etching, etc.) and cleaning processes.

[0005] During processing, the substrate is placed on a substrate support, such as an electrostatic chuck (ESC) or pedestal, in a processing chamber. Process gases are introduced into the processing chamber, and in some instances, a plasma is struck within the processing chamber. The process gases are introduced using a gas distribution device, such as a showerhead. Summary of the Invention

[0006] A pedestal assembly for a substrate processing system configured to perform bulk deposition on a substrate is configured to be raised and lowered. The pedestal assembly includes a stem portion, a base plate portion disposed on the stem portion, and a pumping ring assembly. The base plate portion is configured to support the substrate. The pumping ring assembly is disposed around the base plate portion and includes a lower pumping ring and an upper pumping ring disposed above the lower pumping ring. The pumping ring assembly is configured to define an annular volume such that an annular volume radially outward from the pumping ring assembly is separated by the pumping ring assembly from a volume defined below the base plate portion of the pedestal assembly.

[0007] In another feature, the pedestal assembly further includes a cover ring configured to be supported on the base plate portion when the pedestal assembly is in the raised position, the cover ring including an inner edge configured to overlap and extend above an outer edge of a substrate when the substrate is disposed on the base plate portion. The upper pumping ring is configured to support the cover ring when the pedestal assembly is in the lowered position. The upper pumping ring includes a ledge extending radially inward, the cover ring being supported on the ledge. The upper pumping ring includes an inner annular recess defined in the ledge, the cover ring being supported in the inner annular recess.

[0008] In another feature, the pedestal assembly further includes a backside purge volume defined between the base plate portion and the cover ring below an outer edge of the substrate and an inner edge of the cover ring. The pedestal assembly further includes a plurality of holes defined in an upper surface of the base plate portion within the backside purge volume. The plurality of holes is configured to supply a purge gas to the backside purge volume. The pedestal assembly further includes a plurality of holes defined in the upper pumping ring. The plurality of holes is configured to allow reactants to flow from the deposition volume above the base plate portion to a volume defined below the base plate portion.

[0009] In another feature, the pedestal assembly includes a gap defined between an upper pumping ring and a lower pumping ring. The gap is configured to allow reactants to flow radially outward from below the lower pumping ring to an annular volume radially outer of the pumping ring assembly. The lower pumping ring is generally "C" shaped. The lower pumping ring includes an annular body and legs extending radially outward from upper and lower ends of the annular body.

[0010] In another feature, a processing chamber assembly includes a pedestal assembly. The processing chamber assembly further includes a first section defining a volume below the base plate portion. A radially outer annular volume of the pumping ring assembly is defined between an inner surface of the first section and an outer surface of the lower pumping ring. The processing chamber assembly further includes a top plate disposed on the first section. The top plate defines a deposition volume above the base plate portion. The lower pumping ring is attached to a lower surface of the top plate.

[0011] A substrate support for a substrate processing system configured to perform bulk deposition on a substrate includes a base plate portion and a pumping ring assembly. The base plate portion is configured to support a substrate. The pumping ring assembly is disposed around the base plate portion. The pumping ring assembly is configured to define an annular volume such that the annular volume radially outward of the pumping ring assembly is separated by the pumping ring assembly from a volume defined below the base plate portion of the substrate support.

[0012] In another feature, the pumping ring assembly includes a lower pumping ring and an upper pumping ring disposed above the lower pumping ring. The base plate portion includes an outward step. The substrate support further includes a cover ring configured to be supported on the outward step. The substrate support is configured to be raised and lowered. The cover ring is configured to be supported on the outward step when the substrate support is in the raised position and to be supported on the upper pumping ring when the substrate support is in the lowered position. The upper pumping ring includes a plurality of holes configured to allow reactants to flow from a deposition volume above the base plate portion to a volume defined below the base plate portion. A gap defined between the lower pumping ring and the upper pumping ring is configured to allow reactants to flow from below the upper pumping ring to an annular volume radially outer of the pumping ring assembly.

[0013] Further scope of applicability of the present disclosure will become apparent from the detailed description, claims, and drawings. The detailed description and specific examples are intended for illustrative purposes only and are not intended to limit the scope of the present disclosure. [Brief explanation of the drawings]

[0014] The present disclosure will become more fully understood from the detailed description of the invention and the accompanying drawings, in which:

[0015] [Figure 1] FIG. 1 is a functional block diagram of an exemplary substrate processing system having a cover ring according to the present disclosure.

[0016] [Figure 2] FIG. 2 illustrates an exemplary processing chamber, showerhead, and substrate support according to the present disclosure.

[0017] [Figure 3A] FIG. 3A illustrates a processing chamber assembly including a pedestal assembly according to the present disclosure.

[0018] [Figure 3B] FIG. 3B illustrates an exemplary pumping ring disposed around a pedestal assembly according to the present disclosure.

[0019] [Figure 3C] FIG. 3C illustrates an exemplary backside purge volume around the base plate portion of a pedestal assembly according to the present disclosure.

[0020] In the drawings, reference numbers may be reused to identify similar and / or identical elements. DETAILED DESCRIPTION OF THE INVENTION

[0021] A substrate processing tool has one or more process modules or chambers. For example, a multi-station module (e.g., a quad-station module (QSM)) has multiple stations for performing deposition, etching, and other processes on a substrate. Each station may perform a different process. In contrast, a single-station module has only a single station.

[0022] In some examples, a nucleation process (e.g., an atomic layer deposition (ALD) nucleation step) is performed in a first station of a multi-station module, while bulk fill / deposition steps are performed in other stations of the multi-station module. The optimal chamber dimensions and shapes and / or process parameters may be different for each step. For example, the optimal chamber pressure and temperature for the nucleation step may be lower than the optimal chamber pressure and temperature for the bulk deposition step. However, because the stations in the multi-station module share the same processing chamber, the processing chamber conditions may not be optimal for either the nucleation step or the bulk deposition step.

[0023] The process module according to the present disclosure has components optimized for the bulk deposition step of an ALD process. For example, the process module may be a single-station module configured to perform the bulk deposition step independently of the nucleation step. The nucleation step may be performed in a different module or tool prior to transfer to the process module. As a result, the nucleation step and the bulk deposition step can each be performed under optimal process conditions. While bulk deposition is described, the principles of the present disclosure may also be applied to other types of deposition.

[0024] The process module includes a substrate support (e.g., a pedestal with one or more heating zones), a carrier ring or cover ring, and one or more pumping rings disposed around the pedestal. The one or more pumping rings may include a lower pumping ring and an upper pumping ring. The cover ring extends above and overlaps the outer edge of the substrate to reduce deposition on the outer edge of the substrate. For example, an inert gas is supplied to a gap between the pedestal and the cover ring around the outer edge of the substrate. The outer edge of the cover ring overhangs the inner edge of the upper pumping ring. As a result, when the pedestal is lowered for substrate transfer, the cover ring is supported on the upper pumping ring. Conversely, when the pedestal is raised, the outer edge of the pedestal supports the cover ring.

[0025] 1, an example of a substrate processing system 100 having a processing chamber 104 according to the present disclosure is shown. As described in more detail below, the processing chamber 104 is comprised of an assembly of multiple sections or components (e.g., individually machined processing chamber sections). The processing chamber 104 is configured to improve pumping uniformity during purging.

[0026] The showerhead 108 is disposed within or at a portion of the upper surface of the processing chamber 104. A substrate 112 is disposed on a substrate support 116 (e.g., a pedestal configured for CVD and / or ALD deposition) during processing. For example, the substrate 112 is subjected to bulk deposition in an ALD process.

[0027] Gas delivery system 120 includes gas sources 122-1, 122-2, and 122-N (collectively, gas sources 122) connected to valves 124-1, 124-2, and 124-N (collectively, valves 124) and mass flow controllers 126-1, 126-2, and 126-N (collectively, MFCs 126). MFCs 126 control the flow of gas from gas sources 122 to manifold 128, where the gases are mixed. The output of manifold 128 is fed to manifold 136. The output of manifold 136 is input to showerhead 108 (e.g., a multi-injector, multi-zone showerhead, as described in more detail below). Although manifolds 128 and 136 are shown, a single manifold may be used.

[0028] In some examples, the temperature of the substrate support 116 may be controlled using a resistive heater 144. In some examples, the resistive heaters 144 may be located in different heating zones, allowing for independent temperature control in each heating zone of the substrate support 116. The substrate support 116 may include coolant channels 146. The coolant channels 146 are supplied with a cooling fluid from a fluid storage 148 and a pump 150. Pressure sensors 152, 154 may be located in the manifold 128 or the manifold 136, respectively, to measure pressure. A valve 156 and a pump 158 may be used to evacuate (i.e., purge) reactants from the process chamber 104 and / or to control the pressure within the process chamber 104.

[0029] The controller 160 has a dose controller 162 that controls the dose provided by the showerhead 108. The controller 160 also controls gas delivery from the gas delivery system 120. The controller 160 controls the pressure in the processing chamber and / or the purging of reactants using valves 156 and pumps 158. The controller 160 controls the temperature of the substrate support 116 and the substrate 112 based on temperature feedback (e.g., feedback from a sensor (not shown) in the substrate support and / or a sensor (not shown) measuring the temperature of the coolant).

[0030] Although described as being configured to perform a deposition process, the substrate processing system 100 may also be configured to perform an etching process. In some examples, the substrate processing system 100 may be configured to perform etching on the substrate 112 in the same processing chamber 104 as the deposition process. Accordingly, the substrate processing system 100 may include an RF generation system 164 (e.g., a voltage source, a current source, etc.) configured to generate and supply RF power to one of a lower electrode (e.g., a base plate of the substrate support 116 as shown) and an upper electrode (e.g., the showerhead 108). The other of the lower electrode and the upper electrode may be DC grounded, AC grounded, or ungrounded.

[0031] By way of example only, the RF generation system 164 may include an RF generator 166 configured to generate an RF voltage supplied by a match and distribution network 168 to generate a plasma in the process chamber 104 to etch the substrate 112. In another example, the plasma may be generated inductively or remotely. As shown for illustrative purposes, the RF generation system 164 corresponds to a capacitively coupled plasma (CCP) system. However, the principles of the present disclosure may be implemented with other suitable systems, such as, by way of example only, a transformer coupled plasma (TCP) system, a CCP cathode system, or a remote microwave plasma generation / delivery system.

[0032] The substrate support 116 has a cover ring 170. In some examples, the inner edge of the cover ring 170 overlaps the outer edge of the substrate 112. In some examples, the substrate support 116 is lowered to transfer the substrate 112 into the processing chamber 104. For example, the substrate 112 is transferred onto lift pins (not shown in FIG. 1 ) that are exposed when the substrate support 116 is lowered. As described in more detail below, when the substrate support 116 is lowered, the cover ring 170 may be supported on a structure such as a pumping ring. The substrate support 116 is then raised to engage the substrate 112 and the cover ring 170.

[0033] In some examples, the processing chamber 104 is purged using one or more purge ports 180 (e.g., bottom purge ports) located on the bottom surface of the processing chamber 104. For example, the valves 156 and pumps 158 are controlled to selectively purge reactants downward through the processing chamber 104 and out of the purge ports 180. As described in more detail below, the processing chamber 104 and substrate support 116 according to the present disclosure are configured to improve the symmetry of the purge volume defined within the processing chamber 104 and promote uniform and annular distribution of pumping flow.

[0034] 2 illustrates an exemplary processing chamber 200 having a substrate support (i.e., pedestal) 204 according to the present disclosure. In some examples, the processing chamber 200 is comprised of an assembly of parts. In one example, the processing chamber 200 corresponds to a station of a single-station module. The processing chamber 200 is configured to provide reactants from a showerhead 206 to perform a bulk deposition step on a substrate 208 following a nucleation step performed in a different processing chamber. For example, following the nucleation step, the substrate 208 is transferred to a substrate support (i.e., pedestal) 212 disposed within the processing chamber 200.

[0035] In one example, the substrate 208 is transferred through a slot or other opening 214 in the sidewall of the processing chamber 200 when the pedestal 204 is in the lowered position. When the pedestal 204 is in the lowered position, the lift pins 216 extend above the upper surface of the pedestal 204, and the substrate 208 is placed on the lift pins 216 (e.g., using a transfer robot). The pedestal 204 is then raised to lift and support the substrate 208 to the raised position, as shown in FIG. 2 . In other words, the lift pins 216 are static (i.e., fixed) lift pins and do not rise and lower. Instead, the pedestal 204 is raised and lowered to position the substrate 208.

[0036] The processing chamber 200, showerhead 206, and pedestal 204 are each configured to minimize azimuthal asymmetry in a deposition zone 218 defined between the showerhead 206 and pedestal 204. For example, the deposition zone 218 is a symmetrical annular volume defined between a substrate-facing faceplate 220 below the showerhead 206, an annular inner surface 222 of the processing chamber 200, and the pedestal 204. Furthermore, the gap between the faceplate 220 and the pedestal 204 is minimized to maintain uniformity of process gas flow and distribution within the deposition zone 218.

[0037] The showerhead 206 has a base or head portion 226 and a stem portion 228. The stem portion 228 extends through an upper wall (e.g., a lid 230) of the processing chamber 200 and connects to the head portion 226. For example, the head portion 226 includes a faceplate 220, a backplate 232, and an intermediate plate 234 disposed between the faceplate 220 and the backplate 232. In this example, the faceplate 220 serves as the upper surface of the processing chamber 200.

[0038] The faceplate 220, backplate 232, and mid-plate 234 define at least three flow passages and plenums 238 within the head portion 226, providing radial adjustability and process configurability. For example, one or more plenums 238-1 are defined on the upper surface of the faceplate 220, plenum 238-2 are defined on the upper surface of the mid-plate 234, plenum 238-3 are defined on the upper surface of the backplate 232, and plenum 238-4 are defined radially outward of plenum 238-1 within the faceplate 220. Plenums 238-1, 238-2, 238-3, and 238-4 are collectively referred to as plenums 238.

[0039] As shown, a first flow path (shown as solid lines / arrows) 240 feeds gas through the stem 228 to a corresponding plenum defined in a central zone 242 of the faceplate 220. A second flow path (shown as dotted lines / arrows) 244 feeds gas through the stem 228 to a corresponding plenum defined in a radial or intermediate zone 246 of the faceplate 220. A third flow path (shown as dashed lines / arrows) 248 feeds gas through the stem 228 to a corresponding plenum defined in an outer or edge zone 250 of the faceplate 220. By way of example only, a first flow path 240 passes through the stem 228 and supplies gas to a central zone 242 via a central inlet 252-1, a second flow path 244 passes through the back plate 232 and the intermediate plate 234 and supplies gas to an intermediate zone 246 via a central inlet 252-2, and a third flow path 248 passes through the back plate 232 and the intermediate plate 234 and supplies gas to an edge zone 250 via an edge inlet 252-3.

[0040] The faceplate 220 includes a plurality of holes 254 that extend from the plenum 238 to the deposition zone 218 within the processing chamber 200. For example, gas in the first flow path 240 flows through the holes 254 in the central zone 242, gas in the second flow path 244 flows through the holes 254 in the middle zone 246, and gas in the third flow path 248 flows through the holes 254 in the edge zone 250.

[0041] The gases supplied to the central zone 242, the intermediate zone 246, and the edge zone 250 can be independently controlled to add or remove specific reactants (i.e., gases) from the corresponding regions of the substrate 208. For example, the gas mixture supplied to the deposition zone 218 to perform bulk deposition can include various reactive and non-reactive gases, such as argon (Ar), molecular hydrogen (H), tungsten hexafluoride (WF), and molecular nitrogen (N). In another example, other gases and gas mixtures can be supplied, such as diborane (C2H6), silane (SiH4), and the like. The amount of each gas supplied to each zone 242, 246, and 250 can be controlled (e.g., using individually controllable components of a gas control system, such as the gas control system 120) to tailor the deposition rate and film properties at different locations on the substrate 208. In other words, the amount of each gas supplied to each zone can be independently controlled.

[0042] 2 , gas supplied to the edge zone 250 via the third flow passage 248 is supplied only to the outermost holes 260 of the faceplate 220. In other words, the third flow passage 248 does not supply gas to the central zone 242 or the intermediate zone 246. For example, the holes 260 are in fluid communication with the plenums 238-3 and 238-4 defined in the edge zone 250 of the faceplate 220, but are not in fluid communication with the plenum 238-1 defined in the central zone 242 or the intermediate zone 246. As an example, the plenum 238-4 in the edge zone 250 is separated from the plenum 238-1 in the central zone 242 and the intermediate zone 246.

[0043] Conversely, plenum 238-1 may correspond to a single plenum defined in both central zone 242 and intermediate zone 246. As a result, gases supplied via both first flow path 240 and second flow path 244 are supplied to the same plenum 238-1. Gases supplied through first flow path 240 and second flow path 244 mix within plenum 238-1 and flow through holes 254.

[0044] As shown, the processing chamber 200 is an assembly made up of a first section (e.g., an upper section) 264, a second section (e.g., a lower section) 268, and a third section (e.g., a bottom plate) 272. For example, the first section 264, the second section 268, and the third section 272 are independently machined aluminum sections that are brazed together to form the processing chamber 200. The processing chamber 200 may also include a fourth section (e.g., a top plate or section) 276 configured to engage the showerhead 206 and the lid 230 to define the deposition zone 218.

[0045] The pedestal 204 according to the present disclosure is configured to support a cover ring 280. The cover ring 280 includes an inner edge or lip that extends over and overlaps / covers the outer edge of the substrate 208. In this manner, the cover ring 280 reduces deposition on the outer edge of the substrate 208. When the pedestal 204 is lowered, the cover ring 280 is supported on a ledge 282, such as the inner edge of an upper pumping ring (not shown in FIG. 2), as shown in detail below in FIG. 3A.

[0046] FIG. 3A illustrates a processing chamber assembly 300 including a pedestal or pedestal assembly 304 according to the present disclosure. In some examples, as illustrated in more detail in the present disclosure, the processing chamber assembly 300 is comprised of multiple sections, such as a first section 308-1, a second section 308-2, and a third section 308-3 (collectively referred to as sections 308). For clarity of illustration, some details shown in FIG. 2 (e.g., showerhead 206, lift pins 216, etc.) have been omitted from FIG. 3A. Various manifolds, plenums or internal volumes, and channels defined within section 308 are shown with dashed lines. While illustrated as three sections (e.g., independently machined and brazed together), in other examples, the assembly 300 may be comprised of fewer or more than three sections and / or may be formed by a different fabrication method (e.g., additive manufacturing). A fourth section 310 or top plate (eg, corresponding to fourth section 276) may be provided on first section 308-1.

[0047] The first section 308-1 defines a generally annular plenum or volume around the base assembly 304, including an intermediate portion 312-1 and an upper portion 312-2 (collectively referred to as the first volume 312, together with the lower portion 312-3). For example, the intermediate portion 312-1 surrounds the stem portion 318 of the base assembly 304 below the base plate portion 320 of the base assembly 304. The diameter of the intermediate portion 312-1 is generally the same as the diameter of the base plate portion 320 (or, as shown, is slightly larger than the diameter of the base plate portion 320). The upper portion 312-2 surrounds the base plate portion 320. The upper portion 312-2 may have a stepped configuration. In other words, as shown, the outer diameter of the upper portion 312-2 projects radially outward by more than one time relative to the base plate portion 320. The upper portion 312-2 functions as a first manifold or first stage of manifolding.

[0048] First section 308-1 may include one or more slots 322-1 and 322-2 (collectively referred to as slots 322) that provide access to first volume 312. For example, slot 322-1, as described above, provides access for a substrate to be transferred onto pedestal assembly 304, while slot 322-2 may function as a sight glass that allows visual access to first volume 312, pedestal assembly 304, etc.

[0049] The second section 308-2 defines multiple plenums or volumes, such as a lower portion 312-3 of the first volume 312, an annular second volume 324, and an annular third volume 328. The lower portion 312-3 and the second volume 324 are defined on an upper surface of the second section 308-2. For example, the lower portion 312-3 is continuous with the middle portion 312-1 and surrounds the stem portion 318. The second volume 324 is positioned radially outward of the lower portion 312-3. The second volume 324 functions as a second manifold or a second stage of manifolding. Meanwhile, the third volume 328 is defined on a lower surface of the second section 308-2. For example, the third volume 328 has a generally "L"-shaped cross section. The third volume 328 functions as a third manifold or a third stage of manifolding.

[0050] In some examples, a purge plate 330 (e.g., an annular or disk-shaped plate) is provided in the lower portion 312-3 around the stem portion 318. The purge plate 330 separates the first volume 312 from a bottom purge port 332 that extends through the second section 308-2 and the third section 308-3. The purge plate 330 includes a plurality of holes or annular slots 334. Meanwhile, the third volume 328 is in fluid communication with a main pumping port 336 through the third section 308-3.

[0051] The upper portion 312-2 of the first volume 312, the second volume 324, and the third volume 328 correspond to the first, second, and third stages of the manifold, respectively, and provide internal pumping passageways through the first, second, and third sections 304 of the assembly 300. The various channels 340 extending between and fluidly connecting the upper portion 312-2 and the second volume 324, the second volume 324 and the third volume 328, etc., may be arranged in a circular pattern. For example, the channels 340 may include a plurality of holes formed in the first section 308-1 and the second section 308-2.

[0052] The upper portion 312-2 of the first volume 312, the second volume 324, the third volume 328, and the second channel 340 define an internal pumping passageway that provides a first flow path 342 for evacuating reactants from a deposition volume 344 above the pedestal assembly 304 to the primary pumping port 336. For example, as shown, the first flow path 342 is positioned radially outward of the lower portion 312-1 of the first volume 312 and the base plate portion 320 of the pedestal assembly 304. The components defining the first flow path 342 are configured to improve pumping uniformity and symmetry and reduce backside deposition on the pedestal assembly 304. Meanwhile, the bottom purge port 332 optionally provides additional pumping / purge flow out of the first volume 312 via an additional flow path 348 out of the first volume 312.

[0053] The pedestal assembly 304 according to the present disclosure supports a cover ring 352. For example, the top surface of the base plate portion 320 has an outward step 354 configured to support the cover ring 352. The cover ring 352 includes an inner rim or edge 356 that extends over and overlaps / covers the outer edge of a substrate 360 ​​placed on the pedestal assembly 304. The inner edge 356 of the cover ring 352 reduces deposition on the outer edge of the substrate 360.

[0054] The base assembly 304 includes a lower pumping ring 364-1 and an upper pumping ring 364-2 (collectively referred to as a pumping ring assembly or pumping ring 364) disposed around the outer edge of the base plate portion 320. For example, the pumping ring 364 is annular. The pumping ring 364 separates the upper portion 312-2 of the first volume 312 from the middle portion 312-1. The pumping ring 364 is configured to regulate the flow of reactants from the deposition volume 344 to the upper portion 312-2 via the first flow passage 342. As a result, when the primary pumping port 336 is activated to evacuate the deposition volume 344 as described above, reactants are drawn through the pumping ring 364, then through the second volume 324 and the third volume 328, and into the upper portion 312-2.

[0055] As shown in FIG. 3A and in more detail in FIG. 3B , the upper pumping ring 364-2 is attached to the bottom surface of the top plate 310 (e.g., between the top plate 310 and the first section 308-1). For example, the upper pumping ring 364-2 is attached to the top plate 310 by fasteners such as screws. The upper pumping ring 364-2 includes a ledge (e.g., a step or protrusion extending radially inward) 368 disposed below the outer edge of the cover ring 352. As a result, when the pedestal assembly 304 is lowered to facilitate transfer of the substrate 360 ​​to or from the base plate portion 320, the cover ring 352 is supported on the ledge 368. For example, the ledge 368 may define an inner annular recess 372 configured to support the cover ring 352.

[0056] 3B, the ledge 368 includes a plurality of openings or holes 376. The holes 376 are disposed around the periphery of the ledge 368. The holes 376 allow reactants to flow from above the upper pumping ring 364-2 (i.e., the deposition volume 344), through the upper pumping ring 364-2, and to below the upper pumping ring 364 (i.e., the first volume 312).

[0057] Meanwhile, the lower pumping ring 364-1 is attached to the upper surface of the first section 308-1 within the upper portion 312-2 of the first volume 312. For example, the lower pumping ring 364-1 is generally "C" shaped and includes a radially inner vertical portion (e.g., an annular body portion) 378 and horizontal legs 380 extending radially outward from the upper and lower ends of the body portion 378. The upper portion 312-2 of the first volume 312 is defined between the outer surface of the lower pumping ring 364-1 and the inner surface of the first section 308-1.

[0058] A flow path or gap 382 (e.g., a horizontal gap) is defined between the upper surface of the lower pumping ring 364-1 and the lower surface of the upper pumping ring 364-2. The gap 382 allows reactants to flow radially outward between the pumping rings 364 to the upper portion 312-2.

[0059] 3C with continued reference to Figures 3A and 3B, an annular backside purge volume or gap 384 is defined between an outer surface 386 of the base plate portion 320 and an inner surface 388 of the cover ring 352. Within the purge volume 384, a portion of the outward step 354 has a plurality of holes 390 circumferentially disposed therein. The holes 390 are positioned within the backside purge volume 384 below the outer edge of the substrate 360 ​​and the inner edge 356 of the cover ring 352.

[0060] A gas (e.g., a purge gas or an inert gas, such as argon) is supplied to the backside purge volume 384 through holes 390. For example, the gas may be supplied to one or more plenums 392 defined in the base plate portion 320 (as shown in FIG. 3B ) and from the plenums 392, through holes 390, into the backside purge volume 384. The gas supplied to the backside purge volume 384 in this manner pressurizes the backside purge volume 384 and prevents reactants from flowing between the outer edge of the substrate 360 ​​and the cover ring 352, thereby reducing backside deposition.

[0061] Additionally, surface deposition (i.e., top surface volume) at the outermost edge (e.g., outermost 1 mm, bevel area, etc.) of the substrate 360 ​​is reduced or eliminated. Typically, substrate handling components contact the outermost edge of the substrate 360 ​​during transfer. Contact between the substrate handling components and the deposition material at the edge of the substrate 360 ​​can cause particles of the deposition material to flake off. Therefore, providing purge gas to the backside purge volume 384 can prevent deposition on the outermost edge and / or bevel of the substrate 360 ​​and reduce the potential for particle generation.

[0062] The foregoing description is merely exemplary in nature and is not intended to limit the disclosure, its application, or uses. The broad teachings of the present disclosure can be implemented in a variety of forms. Thus, while the present application includes specific examples, the true scope of the present disclosure is not limited thereto, as other variations will become apparent upon study of the drawings, the specification, and the following claims. It should be understood that one or more steps in a method may be performed in a different order (or simultaneously) without altering the principles of the present disclosure. Furthermore, although each embodiment is described as having particular features, any one or more of the features described with respect to any embodiment of the present disclosure can be implemented in any of the other embodiments and / or combined with any of the features of the other embodiments, even if the combination is not expressly described. In other words, the above-described embodiments are not mutually exclusive, and it is within the scope of the present disclosure to substitute one or more embodiments for one another.

[0063] Spatial and functional relationships between elements (e.g., between modules, circuit elements, semiconductor layers) are described using various terms, such as "connected," "engaged," "coupled," "adjacent," "next to," "on," "above," "below," and "mounted." When a first and second element are described in the above disclosure, unless expressly described as "direct," the relationship may be a direct relationship in which no other intervening elements exist between the first and second elements, or an indirect relationship in which one or more intervening elements exist (either spatially or functionally) between the first and second elements. In this specification, the phrase "at least one of A, B, and C" should be interpreted as meaning the logical OR (A or B or C) using the non-exclusive logical OR, and not as meaning "at least one of A, at least one of B, and at least one of C."

[0064] In some implementations, the controller is part of a system, which may be part of the examples described above. Such systems may include semiconductor processing equipment, such as one or more processing tools, one or more chambers, one or more processing platforms, and / or specific processing components (e.g., wafer pedestals, gas flow systems, etc.). These systems may be integrated with electronics for controlling the operation of the system before, during, and after processing of semiconductor wafers or substrates. This electronics may be referred to as a “controller,” which may control various components or subcomponents of one or more systems. Depending on the processing requirements and / or type of system, the controller may be programmed to control any of the processes disclosed herein, such as delivery of process gases, temperature settings (e.g., heating and / or cooling), pressure settings, vacuum settings, power settings, radio frequency (RF) generator settings, RF matching circuit settings, frequency settings, flow rate settings, fluid delivery settings, position and motion settings, wafer loading and unloading into and out of the tool, and wafer loading and unloading into and out of other transport tools and / or load locks connected or interfacing with the particular system.

[0065] Broadly speaking, a controller may be defined as electronic equipment having various integrated circuits, logic, memory, and / or software that, for example, receive instructions, issue instructions, control operations, enable cleaning operations, enable endpoint metrology, etc. Integrated circuits may include chips in the form of firmware that store program instructions, digital signal processors (DSPs), chips defined as application-specific integrated circuits (ASICs), and / or one or more microprocessors or microcontrollers that execute program instructions (e.g., software). Program instructions may be instructions communicated to the controller in the form of various personalizations (or program files) that define operational parameters for performing a particular process on or for a semiconductor wafer or for a system. The operational parameters, in some embodiments, may be part of a recipe defined by a process engineer to accomplish one or more processing steps during the fabrication of one or more layers, materials, metals, oxides, silicon, silicon dioxide, surfaces, circuits, and / or dies of a wafer.

[0066] In some implementations, the controller may be part of, or coupled to, a computer integrated with, coupled to, or otherwise networked to the system, or a combination thereof. For example, the controller may be all or part of a host computer system in the “cloud” or at a fab that allows remote access to wafer processing. This computer may provide remote access to the system to monitor the current progress of manufacturing operations, review the history of past manufacturing operations, and review trends or performance criteria from multiple manufacturing operations to modify parameters of a current process, set up processing steps following a current process, or initiate a new process. In some examples, a remote computer (e.g., a server) may provide process recipes to the system over a network, which may include a local network or the Internet. The remote computer may include a user interface that allows input or programming of parameters and / or settings, which are then communicated to the system from the remote computer. In some examples, the controller receives instructions in the form of data defining parameters for each processing step performed during one or more operations. It should be understood that the parameters may be specific to the type of process being performed or the type of tool the controller is configured to interface with or control. Thus, as described above, the controller may be distributed, such as by including one or more separate controllers networked together and working toward a common purpose, such as the processes and controls described herein. An example of a controller distributed for such purposes includes one or more integrated circuits on the chamber that communicate with one or more integrated circuits located remotely (e.g., at the platform level or as part of a remote computer) combined to control the processes on the chamber.

[0067] Without limitation, exemplary systems may include a plasma etch chamber or module, a deposition chamber or module, a spin rinse chamber or module, a metal plating chamber or module, a clean chamber or module, a bevel edge etch chamber or module, a physical vapor deposition (PVD) chamber or module, a chemical vapor deposition (CVD) chamber or module, an atomic layer deposition (ALD) chamber or module, an atomic layer etch (ALE) chamber or module, an ion implantation chamber or module, a track chamber or module, and any other semiconductor processing system associated with or that may be used in the fabrication and / or production of semiconductor wafers.

[0068] As described above, depending on the process step or steps being performed by the tool, the controller may communicate with one or more of other tool circuits or modules, other tool components, cluster tools, other tool interfaces, adjacent tools, nearby tools, tools located throughout the factory, a main computer, other controllers, or tools used in material transport to bring containers of wafers into and out of tool locations and / or load ports within a semiconductor fabrication factory.

Claims

1. 1. A pedestal assembly for a substrate processing system configured to perform bulk deposition on a substrate, comprising: the base assembly is configured to be raised and lowered; The base assembly includes: A stem portion and a base plate portion provided on the stem portion, the base plate portion configured to support the substrate; a pumping ring assembly disposed around the base plate portion; the pumping ring assembly includes: (i) a lower pumping ring; and (ii) an upper pumping ring disposed above the lower pumping ring; A base assembly, wherein the pumping ring assembly is configured to define an annular volume radially outward of the pumping ring assembly such that the annular volume is separated by the pumping ring assembly from a volume defined below the base plate portion of the base assembly.

2. 10. The base assembly of claim 1, a cover ring configured to be supported on the base plate portion when the pedestal assembly is in a raised position; The cover ring includes an inner edge configured to overlap and extend above an outer edge of the substrate when the substrate is positioned on the base plate portion.

3. The pedestal assembly of claim 2 , wherein the upper pumping ring is configured to support the cover ring when the pedestal assembly is in a lowered position.

4. 4. The base assembly of claim 3, the upper pumping ring includes a radially inwardly extending ledge; The cover ring is supported on the ledge.

5. 5. The base assembly of claim 4, the upper pumping ring includes an inner annular recess defined in the ledge; The cover ring is supported within the inner annular recess.

6. 4. The pedestal assembly of claim 3, further comprising a backside purge volume defined between the base plate portion and the cover ring below the outer edge of the substrate and the inner edge of the cover ring.

7. 7. The base assembly of claim 6, a plurality of holes defined in an upper surface of the base plate portion within the backside purge volume; the plurality of holes are configured to supply a purge gas to the backside purge volume.

8. 10. The base assembly of claim 1, further comprising a plurality of holes defined in the upper pumping ring; The plurality of holes are configured to allow reactants to flow from a deposition volume above the base plate portion to the volume defined below the base plate portion.

9. 9. The base assembly of claim 8, a gap defined between the upper pumping ring and the lower pumping ring; The gap is configured to allow reactants to flow radially outward from below the lower pumping ring assembly to the annular volume radially outside the lower pumping ring assembly.

10. 10. The pedestal assembly of claim 9, wherein the lower pumping ring is generally "C" shaped.

11. 11. The pedestal assembly of claim 10, wherein the lower pumping ring includes an annular body portion and legs extending radially outward from upper and lower ends of the annular body portion.

12. A processing chamber assembly comprising the pedestal assembly of claim 1 .

13. 13. The processing chamber assembly of claim 12, a first section defining the volume below the base plate portion; The processing chamber assembly, wherein the annular volume radially outer of the pumping ring assembly is defined between an inner surface of the first section and an outer surface of the lower pumping ring.

14. 14. The processing chamber assembly of claim 13, a top plate disposed on the first section; The top plate defines a deposition volume above the base plate portion.

15. 15. The processing chamber assembly of claim 14, wherein the lower pumping ring is attached to a lower surface of the top plate.

16. 1. A substrate support for a substrate processing system configured to perform bulk deposition on a substrate, comprising: a base plate portion configured to support the substrate; a pumping ring assembly disposed about the base plate portion, the pumping ring assembly configured to define an annular volume radially outward of the pumping ring assembly such that the pumping ring assembly separates the annular volume from a volume defined below the base plate portion of the substrate support.

17. 17. The substrate support of claim 16, wherein the pumping ring assembly includes: (i) a lower pumping ring; and (ii) an upper pumping ring disposed above the lower pumping ring.

18. 18. The substrate support of claim 17, the base plate portion includes an outward step; The substrate support further comprises a cover ring configured to be supported on the outward step.

19. 20. The substrate support of claim 18, the substrate support is configured to be raised and lowered; The substrate support, wherein the cover ring is configured to (i) be supported on the outward step when the substrate support is in a raised position, and (ii) be supported on the upper pumping ring when the substrate support is in a lowered position.

20. 18. The substrate support of claim 17, the upper pumping ring has a plurality of holes; the plurality of holes are configured to allow reactants to flow from a deposition volume above the base plate portion to the volume defined below the base plate portion; a gap defined between the lower pumping ring and the upper pumping ring configured to allow reactants to flow from below the upper pumping ring into the annular volume radially outward of the pumping ring assembly;

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