How to set up a CVD reactor

Abstract

The present invention provides a method for storing layer properties and local variable values ​​(λ) in a storage location (5') where a layer is deposited on a substrate (7). i This relates to a method for predicting changes in the individual processing parameters (q i ) is changed, the individual parameters (q i ) changes, but also the value (λ i ) also varies. The method proposes depositing an initiation layer with individual initiation parameters of formulas (I), (I), and (II), and depositing a test layer with different test parameters of formulas (I), (I). From the detected initiation values ​​of formulas (II), (II) and test values ​​of formulas (III), (III), a sensitivity matrix (S i,j ), each element of which can be used to define layer properties and local variable values ​​(λ i ) for each individual parameter (q i ) is shown to show the effect of changing the sensitivity matrix (S i,j ) to achieve a specific target value of the formula (IV), (IV) i ) to preset the correction parameter (Δq i ) can also be calculated.

Description

[Technical Field]

[0001] The present invention relates to a method for predicting changes in target values ​​of layer properties of a layer or layer sequence deposited on multiple substrates arranged at different storage locations in a process chamber or changes in target values ​​of local variables affecting layer growth at the storage locations. The present invention further relates to a method for setting up an apparatus for simultaneously depositing a layer or multiple layers respectively on multiple substrates in a process chamber, where gases are supplied into the process chamber and / or temperatures are set in the process chamber according to predetermined process parameters, including individual parameters that can be individually assigned and individually changed for the different substrates.

[0002] The invention further relates to an apparatus with a control device for simultaneously depositing a respective layer or a layer sequence on a plurality of substrates, and to a method for simultaneously depositing a respective layer or a layer sequence on a plurality of substrates. [Background technology]

[0003] Patent Document 1 describes a method for simultaneously depositing multiple layers on multiple substrates. Different gases may be supplied to the process chamber through gas inlet elements positioned at different orientations. The floor of the process chamber is formed by a rotating susceptor around which multiple substrates are arranged. The substrates may be heated by a zone heating device, where the zones extend circumferentially around the center of rotation. To optimize layer uniformity, particularly layer thickness uniformity, a sensitivity matrix is ​​formed for the process parameters for supplying energy to the heating zones, which allows the process parameters to be varied.

[0004] US Patent No. 6,299,649 describes a method for optimizing layer properties of a sequence of layers deposited on a substrate: A coefficient matrix is ​​formed and an inverse matrix is ​​created therefrom.

[0005] US Pat. No. 6,299,499 also describes the setup of a sensitivity matrix for optimizing the deposition of a layer on a substrate.

[0006] Patent document 4 describes an apparatus for depositing a layer on a substrate. In preliminary tests, the effect of changes in process parameters on the layer properties is determined. Correction values ​​can then be formed from the inverse functions created.

[0007] US Pat. No. 5,649,393 describes a calibration method for correcting process parameters, in which a sensitivity matrix is ​​formed and then inverted.

[0008] Patent Documents 6 and 7 describe such a CVD reactor. A susceptor forming the floor of the process chamber carries a plurality of substrates arranged symmetrically around its center, which are coated by supplying process gas through a gas inlet element located in the center of the process chamber. For this purpose, the susceptor is heated from below by a heating device. The heating device is a cooled RF coil. A temperature-control gas may be supplied between the RF coil and the underside of the susceptor, and the temperature-control gas is supplied so as to individually influence the net heat transport from the heating device to the substrates. Thus, the heat flow to each substrate can be individually modified by individual parameters.

[0009] Patent Document 8 also describes such a CVD reactor. The susceptor forming the floor of the process chamber carries multiple substrate holders arranged symmetrically around its center, which rest on a gas cushion and carry one or more substrates. The gas cushion is generated by a temperature-control gas supplied to pockets in the susceptor that hold the substrate holders. The height of the gas cushion or the thermal conductivity of the temperature-control gas individually influences the heat transport from the heating device. For this purpose, the flow rate of the temperature-control gas can be individually set and changed using individual parameters. Patent Documents 9 and 10 describe a CVD reactor in which purge gas can be supplied separately to a feeder zone in front of the substrate, and the flow rate can be adjusted by individual parameters. [Prior art documents] [Patent documents]

[0010] [Patent Document 1] US Patent Application Publication No. 2018 / 0340259 [Patent Document 2] DE 10 2018 101 173 [Patent Document 3] WO 01 / 90434 [Patent Document 4] International Publication No. 02 / 092876 [Patent Document 5] US Patent Application Publication No. 2016 / 0336215 [Patent Document 6] DE 10 2019 104 433 A1 [Patent Document 7] DE 10 2020 107 517 A1 [Patent Document 8] DE 10 2018 124 957 A1 [Patent Document 9] DE 10 2014 104 218 A1 [Patent Document 10] DE 10 2020 123 326 A1 Summary of the Invention [Problem to be solved by the invention]

[0011] It has been observed that changing one of these individual parameters not only changes the value of the layer property of one or more layers deposited with the changed individual parameter, but also changes the value of the layer property of a layer or layer sequence deposited on a different substrate. Layer property is understood to mean any property of a layer or layer sequence deposited on a substrate. For example, a layer property is a layer thickness that is predetermined by the layer growth rate, which may also be measured on the deposited layer. Another layer characteristic can be its composition. For example, a layer can be doped or composed of more than one component, and the composition can be characterized by the amount of dopant incorporated into the layer or by the ratio of the elements that make up the layer. The layer can be a single-crystal layer of a compound semiconductor with more than one component, such as a GaAlN layer, where the ratio of Al to Ga varies depending on individual parameters. Alternatively, for example, when fabricating vertical-cavity surface-emitting lasers (VCSEL diodes), layer characteristics can be characteristics of the layer sequence. In this context, Bragg reflectors, each consisting of multiple layers, are deposited, and the layer thickness and layer configuration significantly influence the wavelength of the VCSEL diode. It has been observed that even small temperature differences or slight differences in growth rate between adjacent substrates in a process chamber can result in unacceptable wavelength deviations from the target wavelength. Altering the flow of cooling gas or the flow of the gas cushion supporting the substrate holder can affect the layer growth on adjacent substrates, because individually altered gas flows can lead to pressure nonuniformities in the process chamber or to dilution effects. These interdependencies are considered disadvantageous.

[0012] However, local variables in storage locations can also be influenced by parameters individually assigned to the storage locations. Such local variables are understood to be technically relevant environmental variables, such as temperature, in particular substrate temperature, gas flow rates or process gas partial pressures. If a local variable in one storage location is specifically changed using an individual parameter, the local variables in other storage locations also change. The local variables affect the layer deposition in each case.

[0013] The present invention seeks to identify means by which these interdependencies can be reduced. A method for setting up a CVD reactor that minimizes deviations in the values ​​of layer properties deposited on adjacent substrates is identified. The same applies to deviations in local variables. Furthermore, a method is needed that allows prediction of how the target values ​​of layer properties or local variables will change in a stored location when one or more individual parameters are changed. The present invention is based on the objective of identifying how to set up an apparatus for the simultaneous deposition of layers or layer sequences at spatially different locations in a process chamber and characterizing the apparatus for this purpose, by developing the method described in the prior art mentioned in the introduction for predicting the change in values ​​using a sensitivity matrix. [Means for solving the problem]

[0014] This problem is solved by the invention described in the claims, whereby the dependent claims are not only advantageous developments of the invention described in the independent claims, but also independent solutions to the problem.

[0015] According to the invention, the method described in the introduction is further developed to form process parameters from parameters individually assigned to each storage location. These individual parameters have the same effect in each storage location assigned to them, so that, for example, changing a process parameter will affect the layer properties there in the same way as in any other storage location. Also, changing an individual parameter will affect the value of the layer properties in the other storage locations.

[0016] The starting point of the present invention is the recognition that a change in an individual parameter not only results in a change in the value of the layer property of a layer or layer sequence deposited with the changed individual parameter, but that this change will also lead to values ​​of the layer property of layers or layer sequences deposited on different substrates, and that a change in a local variable due to a local change in an individual parameter will also lead to local variables at other storage locations. The individual parameter may be any process parameter that can individually affect the value of a layer property of a substrate. The individual parameter may be a purge gas flow value, a temperature control gas flow value, a mechanical position of an object that affects the temperature in the process chamber, or a precursor mass flow rate, if this process parameter can be individually changed for at least a plurality of substrates or a plurality of substrate holders each carrying at least one substrate. The layer composition and, in particular, the incorporation of dopants can be affected by the precursor mass flow rate. The individual parameters may in particular be any mass flow rate or any energy flow rate such as heating power, etc. The value of the layer property may be the above-mentioned layer thickness, which depends on the growth rate and growth duration, the layer composition, or the wavelength, which depends on the layer thickness and the layer composition. The purpose of the method is first to make it possible to predict to what extent changes in individual parameters, which are primarily only locally effective, will affect the target values ​​of layer properties or local variables in other storage locations. A further object is to identify individual correction parameters, individual target parameters, or individual correction factors for correcting individual parameters provided by, for example, a recipe, such that the above-mentioned interdependencies are significantly reduced.

[0017] First, it is proposed to perform a preliminary test to quantify cross-reactivity. Thus, in the first preliminary test, a starting layer or a starting layer sequence can be simultaneously deposited on each of a plurality of first substrates using a first set of individual starting parameters. The individual starting parameters preferably have the same values ​​for all substrates or substrate holders. The layer property values ​​are determined based on the layer or layer sequence thus deposited. The layer property values ​​can be determined outside the process chamber. However, they can also be determined in situ during deposition, for example by observing the wavelength of light using a spectrometer. In one variant, instead of a layer property, a local variable such as the surface temperature of the substrate or the surface temperature of the substrate holder can be measured not only at each storage location but also during the deposition of the layer. In at least one second preliminary test, a test layer or test layer sequence is simultaneously deposited on each of a plurality of second substrates using a second set of individual parameters, i.e., test parameters, which differ from the starting parameters by at least one value. Preferably, the values ​​of the test parameters are the same except for one test parameter. The test parameters may differ from the starting parameters in that only one test parameter assigned to one substrate or substrate holder differs from the starting parameter, while the other test parameters are the same as the starting parameter. If the substrates or substrate holders are arranged symmetrically in the process chamber, it may be sufficient to perform only one second preliminary test in which only one test parameter differs from the starting parameters. In other cases, it may be necessary to perform a second preliminary test for each individual parameter of the set of individual parameters, preferably with only one test parameter different from the starting parameters in each run. The layer or layer sequence deposited in one or more second preliminary tests is then measured, optionally outside the process chamber, to determine test values ​​for the layer properties. In this variant, instead of a layer property, a local variable such as the surface temperature of the substrate or the surface temperature of the substrate holder can be measured not only at each storage location but also during the deposition of the layer. A sensitivity matrix is ​​created from these test parameters and test values. The elements of the sensitivity matrix can be the quotient of the difference values. If the second preliminary test is performed only once with the substrate or substrate holder symmetrically positioned, then the second preliminary test only needs to be performed once. This returns the elements of one column of the sensitivity matrix. The elements of the other columns are created by cyclic permutation. A quotient can be formed to create the elements of the sensitivity matrix. The quotient is composed of the difference value and a parameter difference, which is the difference between one test parameter and its starting value.

[0018] The difference value can be formed in various ways. In a preferred variant of the invention, a test response is calculated. For this purpose, a first difference between the start value and the average of all start values ​​and a second difference between the test value and the average of all test values ​​are formed. The difference value is then the difference between the first difference and the second difference. However, the difference value can also be the difference between the start value and the test value or it can include at least one of these two averages. The sensitivity matrix thus created is the basis for predicting the change in the target value due to changes in the individual parameters. For example, the sensitivity matrix can be used to predict not only the change in target value at the storage location to which the individual parameter is locally assigned, but also, for example, the growth rate of a layer deposited there or the temperature there. The sensitivity matrix can also be used to predict the change in the value of a layer property or local variable at any other storage location, i.e., how the individual parameter assigned to another storage location will affect the growth rate or temperature of a deposited layer at that other storage location.

[0019] The above-described method provides the basis for setting up an apparatus for simultaneous deposition of a layer or sequence of layers on a substrate located in a local storage location within a process chamber. In the next step, the sensitivity matrix is ​​inverted. The inverse sensitivity matrix and the starting values ​​of the layer properties can then be used to form correction parameters, individual target parameters, or individual correction factors. The individual parameters may be values ​​of gas flow or heat flow directed to substrates located at different locations within the same process chamber, or the positions of multiple objects that affect the gas flow or heat flow within the process chamber, each of which is individually assigned to a substrate or substrate holder and is individually movable. According to a preferred variant of the invention, a susceptor arranged in a process chamber has a plurality of storage locations for substrates or substrate holders arranged rotationally symmetrically around a center, and these storage locations are assigned individual parameters that influence the purge gas flow, heat flow or process gas flow to the substrate holders or storage locations. The individual correction parameters can be formed by multiplying the inverse sensitivity matrix by a vector containing the correction values. The correction values ​​can be the difference between the starting value and the target value of a layer property. For example, the target value can be a predetermined layer thickness, a predetermined layer configuration, or a predetermined characteristic wavelength (e.g., Bragg reflector) of a layer sequence. Alternatively, the target value can be a local variable, such as temperature or flow rate, or partial pressure of a process gas, that can be measured at the storage location. In the first preliminary test, individual parameters, such as the gas flow for generating the gas cushion and the temperature-control gas flow to each substrate holder, may have the same values. After performing the first preliminary test using the method described above, correction values ​​are first determined by forming the difference between the starting value and the target value. Correction parameters can then be formed by calculating a sensitivity matrix and its inverse. By correcting the starting parameters using these correction parameters, the same layer properties can be achieved in a subsequent process in which a layer or layer sequence is deposited using the corrected starting parameters. In particular, this method can be used to set local variables to a uniform value or to set them individually. The individual correction factor may be the sum of the starting parameter and the correction parameter divided by the starting value. Other individual parameters specified by the recipe may be manipulated, in particular multiplied by such correction factors, to adjust the layer property tolerances so as to reduce them. The above method is used in particular to operate the apparatus described in US Pat. No. 6,213,999 or US Pat. No. 6,213,999. Thus, the individual parameter may be the flow rate or composition of a gas flow that generates a gas cushion supporting a substrate holder that is heated from below by heating a susceptor with a heating device, or the individual parameter may be the flow rate or composition of a gas flow that can affect heat transport from the heating device to a susceptor that supports the substrate holder.

[0020] In embodiments of the present invention, it may be possible to provide for the modification of individual parameters to change not only one value but two values ​​simultaneously. For example, a temperature-control gas flow may affect both the substrate temperature and the growth rate, or may affect the layer composition simultaneously with the growth rate. A similar situation applies to the gas flow forming the gas cushion of a rotationally driven substrate holder. The gas flow variable may determine the temperature, growth rate, or layer composition. Several individual parameters affecting various values, such as temperature, growth rate, or layer composition, may also be set simultaneously. By applying the above method multiple times in succession, correction parameters can be created for multiple individual parameters. However, one can start with a set of starting parameters, perform preliminary tests with different sets of test parameters, and vary qualitatively different individual parameters with the different sets. Starting from an operating point of the system defined by the starting values, one can create a sensitivity matrix that shows the change in one or more values ​​when one or more individual parameters are varied.

[0021] The present invention further relates to an apparatus for depositing a layer or a sequence of layers on multiple substrates in a process chamber. The apparatus can include valves and mass flow controllers that are part of a gas mixing device. The process chamber is disposed within a reactor housing. Within the process chamber, a susceptor can have multiple storage locations for multiple substrates. Process gases supplied by the gas mixing device can be supplied into the process chamber using gas inlet elements according to a recipe stored in a controller. The controller is also configured to independently direct gas or heat flows to different substrates or substrate holders carrying one or more substrates according to individual parameters specified by the recipe. The control device should have correction coefficients for correcting the individual parameters. These can be stored in the memory of the control device. The control device is also set up so that the individual parameters provided by the recipe can be corrected by the correction coefficients. The control device can include a programmable microcomputer or microprocessor. The correction coefficients can be elements of a matrix, and typically the matrix consists of only diagonal elements. The individual parameters can be multiplied by this correction matrix.

[0022] The invention further relates to a method for depositing layers or layer sequences on a plurality of substrates, in which correction factors have been determined in the above manner and stored in a control device, the method being carried out using the individual parameters previously modified with the correction factors.

[0023] The system for depositing a layer on a substrate has individual parameters q i The change is driven by the value λ i When carrying out the method according to the invention, the starting parameter q i S can be understood as a vector.

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[0024] These starting parameters qi S In the first preliminary test, the starting value λ i S The layer properties with are determined and can also be understood as vectors.

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[0025] Starting value λ i S is the target value λ i Z The target value λ i Z is a specification, such as the wavelength that the Bragg reflector should have as a characteristic. Usually, all target values ​​have the same value. However, a target value may also be a local variable at a storage location where the substrate is stored in the process chamber. It may be, for example, the temperature. However, the term "target value" should generally be understood to mean the value of a layer property or a local variable at a storage location that is set for a given set (vector) of starting parameters.

[0026] The correction value Δλ is as follows: i An example of a method for determining the above will be described.

[0027] The correction values ​​Δλi are calculated from these target and starting values ​​using the following formula:

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[0028] The objective of this method is to determine the target parameter q for which a layer or sequence of layers can be deposited. i Z The target parameter is used to determine the layer properties of a layer or layer sequence, e.g., the wavelength, at a target value λ i Z The intermediate goal of the method is to reach the starting parameter q i S to the target parameter q i ZCorrection parameter Δq for calculating i The purpose is to determine:

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[0029] However, the method according to the invention also first calculates the value λ i This includes relevant preliminary steps that can only make predictions about changes in the

[0030] In the second preliminary test, the test parameter q i T is used and can also be understood as a vector.

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[0031] In this case, all but one element of the vector is maintained at the same value as the uniform parameter q. Only one element of the vector differs from all other elements of the vector by a parameter difference Δq from the uniform parameter q.

[0032] The uniform parameter preferably has the value of the starting parameter.

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[0033] By measuring the layer or layer sequence deposited during the second preliminary test, the test value λ i T is determined. This test value can also be thought of as a vector. Similarly, local variables can also be measured during the second pre-test.

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[0034] If the device has an asymmetric arrangement of storage locations on the board, it may be necessary to perform a second preliminary test corresponding to the number of storage locations, in which case different elements in each vector of test parameters differ from the uniform parameters. On the other hand, in the case of a symmetric arrangement, it is sufficient to determine only one column of the test value matrix. The other columns are then obtained by combining the test values ​​in the manner described above, i.e., by cyclic permutation.

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[0035] Sensitivity matrix S i,j can be generated from this test value matrix in a variety of ways, and the sensitivity matrix S i,j Each element of represents the change in the test value when changing an individual parameter.

[0036] In the first alternative, the sensitivity matrix S i,j To create S- The mean and test value λ T- The average of is used.

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[0037] The average value of these two, λ S- , λ T- From the test response λ i TA is formed as follows:

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[0038] Using these test responses, the sensitivity matrix S i,j becomes:

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[0039] Alternatively, the sensitivity matrix S i,j can also be calculated as follows:

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[0040] Alternatively, the sensitivity matrix S i,j can also be calculated as follows:

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[0041] Test parameter q i T Preferably, each corresponds to a uniformity parameter q0.

[0042] The sensitivity matrix S thus created i,j By using, for example, the value λ i It is possible to predict the following.

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[0043] Sensitivity matrix S i,j is the correction value Δλ i and the correction parameter Δq i Connect it as follows:

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[0044] Sensitivity matrix S i,j is the inverse sensitivity matrix S i,j -1 By inverting to

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[0045] Correction parameter Δq i The correction value Δλ i can be calculated directly from

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[0046] From this, the correction coefficient k i can be calculated as follows:

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[0047] Correction coefficient k i Using the target parameter q i Z can be calculated as follows, where q i S are the starting parameters specified in the recipe.

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[0048] The individual parameters specified in the recipe are then corrected by the correction coefficients k in the subsequent manufacturing process. i It may be multiplied by

[0049] The present invention also provides two different target values ​​λ i Z , λ' i Z wherein each of the two or more target values ​​may be a layer property of a substrate placed at several different containment locations within a process chamber, or may be a local physical variable that affects layer growth at each instance, such as an environmental property of the containment location. i Z The second target value λ' may be a layer characteristic such as layer thickness or Bragg mirror wavelength. i Z may be a local variable in the storage location, for example a temperature, for example the substrate temperature. To implement such a method variant, the above-described method can be executed several times in succession. In a first variant, the starting parameter q i SIn the first preliminary test with a set of i S , λ' i S may be determined. In subsequent preliminary tests, the individual parameters q i is modified in the above way to obtain the first sensitivity matrix S i,j is obtained, which is used to calculate the first individual parameter q i The first value λ when i and the second sensitivity matrix S' i,j is obtained, which is used to calculate the second individual parameter q i The second value λ' when i It is possible to predict changes in These types of variations can be used to determine, for example, the variation of layer thickness or layer growth rate through the thickness of the gas cushion, and the variation of the surface temperature of the substrate through the temperature control gas flow.

[0050] Also, two (or more) different parameters q i and q i However, there are two or more different target values ​​λ i Z , λ' i Z These parameters are, for example, the gas used to rotate the substrate holder (rotational gas flow) and the temperature control gas, and these two parameters can have different effects on both the layer thickness and the temperature. A further object of the method is to optionally consider the influence of multiple parameters on only one target value (e.g., layer thickness). For this purpose, a single matrix S is calculated for the gas that generates the rotation. i,j is determined, and one matrix S' is calculated for the temperature-controlled gas. i,jThen, for example, the parameters of the temperature control gas are determined / adjusted in a manner (not the subject of the present method) such that a desired substrate temperature profile is obtained under a predetermined initial temperature deviation. The effect of changing the parameters of the temperature control gas on the target layer thickness is then calculated using the matrix S' i,j Predict using. This initially unintended and undesired secondary effect of the temperature control gas on the target layer thickness is then corrected by the correction value Δλ i and minimize the matrix S in Eq. 18 with the correction parameters for the rotating gas flow. i,j -1 This can be taken into account when determining the correction value for the gas that produces the rotation using

[0051] Therefore, it is also provided that a second test layer or a second test layer sequence is deposited simultaneously with a third set of second test parameters, which are assigned to another individual parameter different from the first test parameters, in order to predict changes in the values ​​of the layer properties or local variables in one or more further third preliminary tests on a plurality of third substrates. For example, in the second preliminary test, the mass flow rate of the gas generating the gas cushion on which the substrate holder rests or the mass flow rate of the gas rotating the substrate holder can be changed. The relevant values ​​can be the layer thickness and / or the temperature. When depositing a second test layer, the mass flow rate of the temperature control gas can be changed. Again, a layer thickness and / or temperature can be determined as a value. A second test value of the same layer property, e.g., the same layer thickness or layer configuration, is then measured on the second test layer or test layer sequence, or a second local variable, such as the temperature of the substrate, is measured. In this way, it is possible to predict the extent to which two different parameters, such as the mass flow rate of the gas generating the gas cushion and the mass flow rate of the temperature control gas, can affect the same layer property or the same local variable to different degrees.

[0052] However, the above method can also be performed several times in succession, with the starting value determined for each initial preliminary test after each process step is completed. [Brief explanation of the drawings]

[0053] Hereinafter, an embodiment of the present invention will be described with reference to the accompanying drawings. [Figure 1] FIG. 1 is a plan view of a susceptor 3 of a CVD reactor. [Figure 2] FIG. 2 is a cross section taken along line II-II in FIG. DETAILED DESCRIPTION OF THE INVENTION

[0054] An exemplary embodiment of an apparatus for carrying out a method of coating a semiconductor substrate, in particular with a semiconductor layer, has a reactor housing 1, which may be evacuated and in which a process chamber 2 is arranged, and which may be made of stainless steel.

[0055] Below the upper wall of the housing 1 is a process chamber ceiling 14, which in this embodiment can be cooled, for which cooling channels form a cooling device 15. In the middle of the process chamber 2 is a gas inlet element 9, which has gas delivery orifices for the delivery of process gases. The process gases can be, for example, hydrides of main group V elements and organometallic compounds of main group III elements. These are supplied into the process chamber 2 through the central gas inlet element 9, along with a carrier gas. The process gases and carrier gas flow radially from the inside to the outside through the process chamber 2. A gas outlet element 10 extends around the outer edge of the susceptor 3. Exhaust gases can be exhausted from the process chamber 2 through this gas outlet element 10 using a vacuum pump (not shown).

[0056] The floor of the process chamber 2 opposite the process chamber ceiling 14 is formed by the upper surface 3 ′ of the susceptor 3 .

[0057] On the upper surface 3' of the susceptor 3 there are a number of storage locations 5', each for one substrate, which are arranged symmetrically around the center of the susceptor 3. It is also possible to place a number of substrates in each storage location 5'.

[0058] In the illustrated embodiment, there are multiple pockets 4, each having a bottom surface to which a supply line 8 opens. Within each pocket 4 is a substrate holder 5 that carries a substrate 7. By supplying gas to the supply line 8, a gas cushion 6 is formed between the underside of the substrate holder 5 and the bottom surface of the pocket 4, which keeps the substrate holder 5 suspended and drives it to rotate about its axis. In other embodiments of the invention, the substrates 7 may be placed directly on the susceptor 3, so that the susceptor 3 simply has multiple storage locations for the substrates 7.

[0059] A sealing plate 12 extends below the lower surface 3" of the susceptor 3. A gap 13 is formed between the lower surface 3" and the sealing plate 12. Supply lines 16, 17 open into the gap 13 at different radial positions. The orifice 16' is located radially inward of an arc line that extends around the rotation axis 20 of the susceptor 3 and passes through the radially inner edge of the pocket 4. A second orifice 17' of the supply line 17 is located below the pocket 4. In other exemplary embodiments of the present invention, these orifices 16', 17' need not be present, or only one of these orifices 16', 17' may be present.

[0060] Below the sealing plate 12 is a spiral coil forming the heating device 11. The coil is used to generate a high frequency magnetic field that generates eddy currents in the susceptor 3, thereby heating the susceptor 3. The coil of the heating device 11 is hollow. A coolant may flow through the cavity in the heating device 11. In other embodiments of the present invention, the heating device may be a resistance heater that heats the susceptor 3, or a radiant heater that heats the susceptor 3 by thermal radiation.

[0061] Supply lines 8, 16, 17 are connected to a gas mixing system having a mass flow controller 18 and a valve 19, with the valve 19 and mass flow controller 18 being controlled by a controller 22. The controller 22 may comprise a microcontroller or microprocessor having a memory containing a program that controls the mass flow controller 18 and the valve 19 according to the program also stored in the memory.

[0062] In the exemplary embodiment, gas flow can be individually supplied to each of the five pockets through individual supply lines 8, each supporting a substrate holder 5 on a gas cushion 6. Therefore, the controller 22 can be used to individually adjust the gas cushion 6 of every substrate holder 5. The mass flow rate of the gas forming the gas cushion 6 can be used to individually adjust the height of the gas cushion 6, thereby adjusting the distance of the substrate holder 5 from the bottom of the pocket 4. This gas mass flow rate not only affects the surface temperature of the substrate 7 carried by the substrate holder 5. A change in the mass flow rate also dilutes the process gas above the substrate 7, because the gas supplied into the pocket 4 flows into the process chamber 2 through the edge gap between the substrate holder 5 and the pocket 4 wall. This affects the growth rate of the layer deposited on the substrate 7, resulting in different thicknesses of the layer deposited on the substrate.

[0063] By changing the temperature of the substrate 7, the layer structure of the ternary or quaternary semiconductor layer deposited on the substrate can be changed.

[0064] In this embodiment, at least one gas supply line 16, 17 opens below each substrate holder 5, allowing gas to be supplied to the gap 13. In operation, as the susceptor 3 rotates about its axis 20, gas can be supplied through the orifices 16', 17' in synchronization with the rotation of the susceptor 3. The gas flow through the gap 13 can be individually varied to change the heat transfer between the heated susceptor 3 and the cooling coil 11. As a result, the change in heat flow changes the temperature of the substrate 7.

[0065] Valves 19 and mass flow controllers 18 can be used to supply gas mixtures with different heat transfer properties, for example, an adjustable mixture of nitrogen and hydrogen, to supply lines 8, 16, 17. By selecting the mixture ratio, heat transport by thermal conduction can be adjusted individually beneath each of the multiple substrates 7, either towards the substrate holder 5 or away from the susceptor 3.

[0066] A further temperature control gas, which may be a mixture of two gases with different heat transfer properties, can be supplied through an optional supply line 23 which opens radially inward of the substrates 7 at the upper surface 3' of the susceptor 3 with orifices 23'. Again, each substrate 7 is assigned an orifice 23' from which an individual gas mixture or individual gas flow is supplied to the process chamber 2.

[0067] In an apparatus and / or method variation, a reactive gas can also be supplied to orifice 23'.

[0068] The invention relates both to devices having four of the above-mentioned supply lines 8, 16, 17, 23, and to devices having only one or fewer than four of the above-mentioned four supply lines 8, 16, 17, 23. In principle, it is sufficient to carry out the method if only one set of the above-mentioned supply lines is provided.

[0069] Precise control of the growth rate and material composition of each substrate 7 is crucial in the fabrication of VCSEL diodes. These variables directly affect the wavelength of light emitted by the diode. The layer sequence deposited on the substrate 7 forms a Bragg mirror. Here, material composition, which is determined by temperature, is a key variable. Additionally, individual layer thickness, which is determined by growth rate, is also a key variable. Even slight variations between individual wafers can lead to poor results in fabrication. However, the method is not limited to fabricating layer sequences for forming Bragg mirrors, but is also effective for fabricating other configurations of layers or layer sequences.

[0070] It has been found that changing one of the gas flows through the supply lines 8, 16, 17, 23 not only affects the material composition and / or growth rate of the layer or layer sequence deposited on the corresponding substrate 7, but also affects the material composition and / or growth rate on the other substrates 7 due to cross-effects.

[0071] These gas flow rates and / or gas mixture ratios are referred to herein as individual parameters. Material compositions and / or growth rates are referred to herein as values.

[0072] One of the objectives of the present invention is to determine a target value λ for material composition, layer thickness, or wavelength in the case of VCSEL diodes. i Z In order to achieve this, target parameters q for individual parameters specified by the recipe, such as gas flow rates and gas mixture ratios, are calculated. i Z The key is to find out.

[0073] 1 is a method for setting up a CVD reactor in which a layer sequence forming a Bragg mirror with the most uniform wavelength possible is deposited on a substrate 7, wherein in a first preliminary test, an uncompensated flow of a temperature-controlled gas is supplied through at least one of the above-mentioned supply lines 8, 17, 16, 23. For example, the following gas flow rates are set with a uniformity parameter q0:

[0074] For example, the following gas flow rate is calculated using the uniformity parameter λ i is set.

number

[0075] The five substrates in the exemplary embodiment are then measured to determine the wavelength of the Bragg reflector. i S The next wavelength of is determined.

number

[0076] In a second preliminary test, another five substrates are coated with a layer sequence, but with different gas flow rates. At least one gas flow rate is reduced by a parameter difference Δq. For example, the following set of test parameters is used:

number

[0077] Furthermore, these substrates were measured for the wavelength of Bragg reflection, with the following test values ​​λ i T is measured.

number

[0078] Mean starting value λ S- and the average value of the test value λ T- is determined using Equations 9 and 10. Using these average values ​​and the measured wavelength, the test response λ is calculated according to Equation 11. i TA is determined.

[0079] When depositing the layer sequence in the second preliminary test, the gas flow rate of 400 sccm was changed to 150 sccm by Δq. The sensitivity matrix S i,j The columns have the following format:

number

[0080] In the exemplary embodiment, since the substrate holder 5 and orifices 16', 17', 8', 23' are arranged symmetrically with respect to the axis of rotation 20, a change to one of the individual parameters assigned to the plurality of substrates 7 can be assumed to be the same as a change to the individual parameter assigned to each of the plurality of substrates 7. The sensitivity matrix S i,j Other columns of can be achieved by cyclic permutations as shown in the following table. [Table 1]

[0081] inverse sensitivity matrix S i,j -1 By forming the correction parameter Δq i is calculated using the above method, and the correction value Δλ i is specified in Equation 19.

number

[0082] These correction parameters Δq i , the target parameter q is calculated in the form of a corrected flow rate to the orifices 8', 16', 17', and 23' using the relationships specified in Equations 19 and 20. i Z can be set.

[0083] These correction values ​​Δλ i and the target parameter q i Z may be stored in the memory of the controller 22.

[0084] In a variation of the method, a second starting value λ′ is determined after a first preliminary test performed using, for example, the parameter vector specified in Equation 21. i S A vector can also be established from the first value λ iis the Bragg reflection and the second value λ' i may be a temperature. i T may be determined after a second preliminary test conducted using, for example, the test parameters specified in Equation 23. A second sensitivity matrix S' is then calculated in a manner similar to that described above. i,j After the second inverse sensitivity matrix is ​​created, further correction values, correction parameters, etc. can be calculated using the method described above.

[0085] In an exemplary embodiment of the present invention, the value λ i , for example, the Bragg reflection or the layer thickness or the temperature measured during the method can be calculated by two different individual parameters λ i For example, these values ​​λ i can be influenced by both the mass flow rate creating the gas cushion 6 and the mass flow rate of the temperature control gas flowing through the gap 13. i are the various individual parameters q i In this variant, the second test value λ' i T is also determined, and the second sensitivity matrix S' i,j is calculated in a similar way. Using this, various individual parameters q i is the value λ i The extent of the impact can vary.

[0086] Parameter optimization involves one or two inverse matrices S i,j -1 This can be done by forming

[0087] The preceding notes describe the inventions contained in the application as a whole, each of which independently advances the prior art through at least the following combinations of features, any two, some, or all of which combinations of features may themselves be combined:

[0088] In a first preliminary test, the starting layer or starting layer sequence is determined by the individual starting parameter q i S are simultaneously deposited on each of the plurality of first substrates 7 by a first set of Starting value λ of layer properties i S is determined based on the starting layer or starting layer sequence, or the starting value of the local variable λ i S is measured when depositing the starting layer or starting layer sequence, In one or more second preliminary tests, a test layer or test layer sequence is i T are simultaneously deposited on each of the plurality of second substrates 7 by a second set of Test value λ of layer properties i T is determined based on the test layer or test layer sequence, or the test value λ of the local variable i T is measured when depositing a test layer or test layer sequence, and At least one sensitivity matrix S i,j but at least the test value λ of the layer property or local variable i T The sensitivity matrix S is formed from i,j Each element of is a layer property or local variable value λ i Each individual parameter q i 2. A method for representing the effect of a change in

[0089] 1. A method for setting up an apparatus for simultaneously depositing layers or layer sequences onto substrates 7 located in different storage locations 5′ in a process chamber 2, comprising: According to the method of claim 1, at least one sensitivity matrix S i,j is formed, and the sensitivity matrix S i,j The inverse sensitivity matrix S is obtained by inverting i,j -1 is formed and the value λ i A specific target value of λ i Z To achieve this, the inverse sensitivity matrix S i,j-1 Using the individual correction parameters Δq i , individual target parameters q i Z , or the way in which individual correction factors are formed.

[0090] Individual parameter q i are values ​​of gas or heat flow directed to substrates 7 located at different storage locations 5' within the same process chamber 2.

[0091] The apparatus has a plurality of substrate holders 5 of identical design, each carrying one or more substrates 7, and has an individual parameter q i affecting purge gas flow, heat flow, or process gas flow to the substrate holder (5).

[0092] When the first preliminary test is performed, the individual starting parameters q i S have the same value as each other.

[0093] In one or more second preliminary tests, each individual test parameter q i T Only one of the individual test parameters q i T and differs by a parameter difference Δq.

[0094] The substrates 7, or the substrate holders 5 carrying the substrates 7, or the storage locations for storing the substrate holders 5 and the substrates 7 are arranged symmetrically in the process chamber 2, and a second preliminary test is performed only once, during which the individual test parameters q i T Only one of the individual test parameters q is identical to the others. i T and the test value λ of the layer properties obtained from it differs by the parameter difference Δq. i T The sensitivity matrix S i,j The first column of the sensitivity matrix S i,j The remaining columns of are test values ​​λ iT The method is characterized in that the compound is formed by the cyclic permutation of

[0095] The quotient of the difference value and the parameter difference Δq is the sensitivity matrix S i,j and the difference values ​​are used to form the elements of the test value λ i T and the starting value λ i S The average value of λ - The difference between the test value λ i T and the starting value λ i S or the test value λ i T and the test value λ i T The average value of λ - The difference between the starting value λ and i S and the starting value λ i S The average value of λ - and the difference between ...

[0096] Individual correction parameter Δq i is the inverse sensitivity matrix S i,j -1 Correction value Δλ i and / or the individual correction values ​​Δλ i is the starting value λ i S and the target value λ i Z and / or the individual correction coefficient k i is the starting parameter q i S and the correction parameter Δq i The sum of the values ​​λ and i S The method is characterized in that the quotient is obtained by dividing by

[0097] Individual parameter q i is the flow rate or composition of the gas flow that generates the gas cushion 6 carrying the substrate holder 5 that is heated from below by heating the susceptor 3 by the heating device 11, and / or the individual parameter qi is the flow rate or composition of the gas flow that can affect the heat transfer between the temperature control device 11 and the susceptor 3, and / or the individual parameter q i is a gas flow of a process gas containing elements that constitute or dope the layer or layer sequence to be deposited.

[0098] By applying the method according to any of the preceding claims several times in succession, it is possible to obtain the same or different target values ​​λ i Z and different individual parameters q i Multiple sensitivity matrices S for i,j is formed.

[0099] In order to predict the change in the second value λ′ of a local variable affecting the layer properties or layer growth of a layer or layer sequence deposited on a plurality of substrates 7 arranged in spatially separated storage locations 5′ in the process chamber 2, an individual starting parameter q S The starting value λ obtained by the first set of i S is used, and in one or more further third preliminary tests, a second test layer or a second test layer sequence is i T Another individual parameter q i The second test parameter q' assigned to i T and a second test value λ' of the layer property is simultaneously deposited on each of the plurality of third substrates 7 by a third set of i T is determined based on the second test layer or the second test layer sequence, or a second test value λ' of the local variable i T is measured during a second test layer or a second test layer sequence, and at least one second sensitivity matrix S' i,j is the second test value λ' of the layer property or local variable i T each element of which is a second target value λ' of the layer property or local variable iZ Other individual parameters q for each of i Determine the impact of each change.

[0100] In the first application, the individual parameters q' i is the gas flow that generates a gas cushion supporting the local substrate holder 5, and the target value λ' i Z is the layer thickness of at least one layer of the layer or layer sequence, and then in a second application of the method, the individual parameters q i is the gas flow that affects the heat transport from the heating device 11 to the substrate 7, and the target value λ' i Z is the temperature of the substrate 7 when the layer is deposited or is also the layer thickness of the layer or at least one layer of the layer sequence.

[0101] Individual parameters provided by the recipe, q i Correction coefficient k to correct i The device is characterized in that the above is stored in the control device 22.

[0102] The sensitivity matrix S according to any of the preceding claims i,j or the inverse sensitivity matrix S i,j -1 is the correction coefficient k i 10. An apparatus configured and used to determine:

[0103] Individual parameter q i is a correction coefficient k determined in particular according to any one of claims 1 to 12 i The method according to claim 1, wherein the correction is performed by

[0104] A control program for controlling the valves (19) and mass flow controllers (18) of the apparatus according to claim 13 or 14 to carry out the method according to claim 15.

[0105] All disclosed features are essential to the invention (both by themselves and in combination with one another). The disclosure of the present application incorporates in its entirety the disclosures of the relevant / additional priority documents (copies of earlier applications), with the intention of incorporating the features of these documents into the claims of the present application. The dependent claims are characterized by independent, inventive further developments of the prior art, even without the features of the claims cited therein, in particular for the purpose of filing a divisional application based on these claims. The invention specified in each claim may additionally have one or more features specified in the preceding description, particularly those designated by reference signs and / or specified in the sign explanations. The present invention also relates in particular to embodiments in which individual features set forth in the preceding description are not implemented, insofar as they are clearly unnecessary for the respective intended use or can be replaced by other means having the same technical effect. [Explanation of symbols]

[0106] 1 Reactor housing 2. Process chamber 3 Susceptor 3' top surface 3” bottom side 4 pockets 5' Storage location 5 PCB holder 6 Gas Cushion 7. Circuit Board 8 Supply Lines 8' orifice 9 Gas inlet element 10 Gas outlet element 11 Heating device 12 sealing plate 13 Gap 14 Process chamber ceiling 15 Cooling device 16 Supply Line 16' Orifice 17 Supply Line 17' Orifice 18 Mass Flow Controller 19 Valve 20 Rotation axis 21 Rotation axis 22 Control device 23 Supply Line 23' Orifice λ i value λ' i Second Value λ i S Start Value λ' i S Second starting value λ i Z Target value λ' i Z Second target value λ i TA Test Response Δλ i Correction Value λ i T Test Value λ' i T Second test value λ - Average λ S- Average of the starting values λ T- Average test value q i Individual Parameters q i S Start parameters q i T Test parameters q' i T First test parameter q i Z Target Parameters Δq i Correction parameters q0 uniform parameter Δq parameter difference S i,j Sensitivity Matrix S' i,j Second sensitivity matrix S i,j -1 inverse sensitivity matrix ki Correction Factor

Claims

1. The layer property values ​​(λ) of a layer or layer sequence deposited on a plurality of substrates (7) arranged in spatially separated storage locations (5') within the process chamber (2) are ｉ ) or the value of the local variables (λ) that affect the layer growth in the storage location (5'). ｉ ) a change in The value of the layer property of the layer to be deposited (λ ｉ ) or the value of the local variable (λ ｉ variable process parameters supplying gas to the process chamber (2) and / or setting the temperature of the process chamber (2) to affect the In the preliminary test, at least one sensitivity matrix (S ｉ，ｊ ) is formed, and the sensitivity matrix (S ｉ，ｊ ) are the values ​​of the layer properties (λ ｉ ) or the value of the local variable (λ ｉ ) showing the effect of changing the processing parameters on each of The processing parameters are individually assigned to each of the storage locations (5') as parameters (q ｉ ) is formed by The individual parameters (q ｉ ) has the same effect on layer properties there or on local variables there, The individual parameters (q ｉ ) changes the value (λ) in the other storage location (5'). ｉ ) also affecting the

2. In a first preliminary test, the individual starting parameters (q ｉ Ｓ simultaneously depositing an initiation layer or an initiation layer sequence on each of a plurality of first substrates (7) using a first set of The starting value of the layer property (λ ｉ Ｓ ) is determined based on the starting layer or starting layer sequence, or the starting value (λ) of the local variable ｉ Ｓ ) is measured when depositing the starting layer or starting layer sequence; In the second preliminary test, the individual test parameters (q ｉ Ｔ simultaneously depositing a test layer or test layer sequence onto each of a plurality of second substrates (7) using a second set of The test values ​​of the layer properties (λ ｉ Ｔ ) is determined based on a test layer or test layer sequence, or the test value (λ) of the local variable ｉ Ｔ ) is measured when depositing a test layer or test layer sequence; and The sensitivity matrix (S ｉ，ｊ ) at least the test value (λ) of the layer property or the local variable ｉ Ｔ 2. The method of claim 1, wherein the polymer is formed from:

3. 1. A method for setting up an apparatus for simultaneously depositing layers or layer sequences onto substrates (7) located in spatially separated storage locations (5') within a process chamber (2), comprising: The method according to claim 1 or 2 provides at least one sensitivity matrix (S ｉ，ｊ ) is formed, The sensitivity matrix (S ｉ，ｊ ) to obtain the inverse sensitivity matrix (S ｉ，ｊ －１ ) is formed, and The value (λ ｉ ) given target value (λ ｉ Ｚ ) to achieve the individual parameters (q ｉ ) to correct the individual correction parameters (Δq ｉ ), individual target parameters (q ｉ Ｚ ) or the individual correction coefficients are the inverse sensitivity matrix (S ｉ，ｊ －１ ) is formed using the method.

4. The individual parameters (q ｉ 4. The method according to claim 1, wherein the values ​​of the gas flow or heat flow directed to substrates (7) located in different storage locations (5') within the same process chamber (2) are used.

5. The apparatus has a plurality of substrate holders (5) of the same design, each of the substrate holders (5) carrying one or more substrates (7), and the individual parameters (q ｉ 5. The method according to claim 1, wherein the flow of purge gas, heat or process gas to each of the substrate holders (5) is influenced by the flow of purge gas, heat or process gas.

6. When performing the first preliminary test, the individual starting parameters (q ｉ Ｓ 6. The method according to claim 2, wherein the values ​​of the first and second variables have the same value.

7. In one or more of the second preliminary tests, the individual test parameters (q ｉ Ｔ ) is independent of all other individual test parameters (q ｉ Ｔ 7. The method according to claim 2, wherein the difference (Δq) is different from the parameter (Δq) by a parameter difference (Δq).

8. The substrate (7), the substrate holder (5) supporting the substrate (7), or a storage location for storing the substrate holder (5) and the substrate (7) are arranged symmetrically within the process chamber (2), and the individual test parameters (q ｉ Ｔ a single second preliminary test is performed in which only one parameter difference (Δq) is different from the other identical individual test parameters; The sensitivity matrix (S ｉ，ｊ ) the first column of the table contains the test values ​​(λ) of the layer properties obtained from the second preliminary test. ｉ Ｔ ) and the sensitivity matrix (S ｉ，ｊ ) are the remaining columns of the test values ​​(λ ｉ Ｔ 8. The method according to claim 2, wherein the cyclic substitution of

9. The sensitivity matrix (S ｉ，ｊ The quotients of the difference values ​​and the parameter differences (Δq) are used to form the elements of the test values ​​(λ ｉ Ｔ ) and the starting value (λ ｉ Ｓ ) average value (λ － ) and the test value (λ ｉ Ｔ ) and the starting value (λ ｉ Ｓ ) or the test value (λ ｉ Ｔ ) and the test value (λ ｉ Ｔ ) average value (λ － ) and the starting value (λ ｉ Ｓ ) and the starting value (λ ｉ Ｓ ) average value (λ － 9. The method according to claim 2, wherein the difference is the difference between the difference between the

10. The inverse sensitivity matrix (S ｉ，ｊ －１ ) to the correction value (Δλ ｉ ) to obtain the individual correction parameters (Δq ｉ ) is formed, and / or the individual correction values ​​(Δλ ｉ ) is the starting value (λ ｉ Ｓ ) and the target value (λ ｉ Ｚ ) and / or the individual correction coefficient (k ｉ ) is the starting parameter (q ｉ Ｓ ) and the correction parameter (Δq ｉ ) and the sum of the starting value (λ ｉ Ｓ 10. The method according to claim 3, wherein the quotient is a division by .

11. The individual parameters (q ｉ 11. The method according to claim 1, wherein the gas flow rate or composition of the gas flow generates a gas cushion (6) carrying the substrate holder (5), the substrate holder (5) being heated from below by heating the susceptor (3) with a heating device (11).

12. The individual parameters (q ｉ 12. The method according to claim 1, wherein the temperature control device (11) and the susceptor (3) are the flow rate or composition of the gas flow, which can affect the heat transfer between the temperature control device (11) and the susceptor (3).

13. The individual parameters (q ｉ 13. The method according to claim 1, wherein the first gas flow is a process gas flow containing elements that constitute or dope the layer or layer sequence to be deposited.

14. 1. A method for setting up an apparatus for simultaneously depositing a layer or a layer sequence on a layer or a layer sequence deposited on a substrate (7) located in a spatially separate storage location (5') in a process chamber (2), or a method for setting up local variables influencing layer growth in said storage location (5'), comprising: By applying the method according to any one of claims 3 to 14 several times in succession, the same or different target values ​​(λ ｉ Ｚ ) and different individual parameters (q ｉ ) for multiple sensitivity matrices (S ｉ，ｊ ) is formed.

15. A second value (λ') of a layer property of a layer or layer sequence deposited on a plurality of substrates (7) arranged in spatially separated storage locations (5') within said process chamber (2). ｉ ), or a second value of a local variable (λ' ｉ ) to predict the change in the individual starting parameters (q ｉ Ｓ The starting value (λ) obtained by the first set of ｉ Ｓ ) is used, and in one or more further third preliminary tests, a second test layer or a second test layer sequence is used with another individual parameter (q ｉ ) assigned to the first test parameter (q ｉ Ｔ ) a second test parameter (q′ ｉ Ｔ ) are simultaneously deposited onto each of a plurality of third substrates (7), A second test value of the layer property (λ' ｉ Ｔ ) is determined based on the second test layer or the second test layer sequence, or a second test value (λ') of the local variable is determined based on the second test layer or the second test layer sequence. ｉ Ｔ ) is measured during deposition of the second test layer or the second test layer sequence; and The second test value (λ') of the layer property or the local variable ｉ Ｔ ) to obtain at least one second sensitivity matrix (S′ ｉ，ｊ ) is formed, and the second sensitivity matrix (S' ｉ，ｊ ) is the second target value (λ') of the layer property or the local variable. ｉ Ｚ ) for each of the other individual parameters (q ｉ 15. The method of claim 3, wherein the effect of each change in

16. In one or more further third preliminary tests, the values ​​of the layer properties (λ ｉ ) to predict the change in the second test layer or second test layer sequence, another individual parameter (q ｉ ) assigned to the first test parameter (q ｉ Ｔ ) a second test parameter (q′ ｉ Ｔ ) are simultaneously deposited onto each of a plurality of third substrates (7), A second test value (λ') of the same layer property ｉ Ｔ ) is determined based on the second test layer or second test layer sequence, or a second test value (λ') of the same local variable is determined based on the second test layer or second test layer sequence. ｉ Ｔ ) is measured during deposition of the second test layer or second test layer sequence; and At least one second sensitivity matrix (S' ｉ，ｊ ) is the second test value (λ') of the layer property or the same local variable ｉ Ｔ ) and the second sensitivity matrix (S' ｉ，ｊ ) is the target value (λ') of the layer property or the local variable. ｉ Ｚ ) for each of the other individual parameters (q ｉ 16. The method of claim 3, wherein the effect of each of the changes in

17. In a first application of the method, the individual parameters (q′ ｉ ) is the gas flow that generates a gas cushion that locally supports the substrate holder (5), and the target value (λ' ｉ Ｚ ) is the layer thickness of said layer or at least one layer of said layer sequence, and In a subsequent second application of the method, the individual parameters (q ｉ ) is a gas flow that affects the heat transport from the heating device (11) to the substrate (7), and the target value (λ' ｉ Ｚ 17. The method according to claim 14, 15 or 16, characterized in that: t is the temperature of the substrate (7) when the layer is deposited or the layer thickness of the layer or at least one layer of the layer sequence.

18. An apparatus for depositing a layer or a sequence of layers on a plurality of substrates (7) in a process chamber (2), comprising: a gas mixing device with valves and mass flow controllers; the process chamber (2) arranged in a reactor housing (1); a susceptor (3) arranged in the process chamber and comprising storage locations for a plurality of substrates (7); and a gas inlet element (9) for introducing process gases provided by the gas mixing device according to a recipe stored in a control device (22), The control device (22) calculates the individual parameters (q ｉ ) according to which gas or heat flows are set up to be directed independently of one another onto different substrates (7) or onto a substrate holder (5) carrying one or more substrates (7), The individual parameters (q ｉ ) for correcting the correction coefficient (k ｉ ) is stored in the control device (22), and the correction coefficient (k ｉ ) to calculate the individual parameters (q ｉ ) is corrected, and the correction coefficient (k ｉ 17. An apparatus, characterized in that: the temperature is determined by a method according to any one of claims 1 to 16.

19. 20. A method for simultaneously depositing one layer or a sequence of layers on each of a plurality of substrates (7) in a process chamber (2) using an apparatus according to claim 18, comprising the steps of: supplying gas to the process chamber (2) and / or setting the temperature within said process chamber (2) according to predetermined process parameters; The process parameters are individually variable individual parameters (q ｉ ), The individual parameters (q ｉ ) is changed by changing one of the individual parameters (q ｉ The value of the layer property (λ) of the layer or layer sequence deposited ｉ ), but also the values ​​(λ) of the layer properties of a layer or layer sequence deposited on another substrate (7). ｉ ) or the individual parameters (q ｉ ) affects the value of the local variable (λ) that influences the layer growth at the storage location (5') of the substrate. ｉ ), but also causes a change in a local variable in another storage location (5'), The individual parameters (q ｉ ) is determined in particular according to any of claims 1 to 16. ｉ ) is corrected by the method.

20. A control program for the valve (19) and mass flow controller (18) of the apparatus according to claim 18 for carrying out the method according to claim 19.

21. A method or device or control program characterized by one or more of the characteristic features of any of claims 1 to 20.

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