Wafer handling end effector configured to selectively lift a wafer from its top surface, a probe system including the wafer handling end effector, and a method of utilizing the wafer handling end effector

Abstract

Disclosed herein are a wafer-handling end effector, a probe system including the wafer-handling end effector, and a method of utilizing the wafer-handling end effector. The wafer-handling end effector is configured to selectively lift a wafer from an upper surface of the wafer and includes a blade, a surface extension, and an attachment mechanism. The blade defines a wafer-facing blade side and includes a gas distribution manifold in fluid communication with the wafer-facing blade side. The surface extension defines a wafer-facing extension side extending away from the blade. The surface extension extends at least partially around the wafer-facing blade side and includes at least three protruding regions protruding from the wafer-facing extension side and configured to physically contact the upper surface of the wafer. The attachment mechanism is configured to selectively attach the surface extension to the blade and selectively detach the surface extension from the blade.

Description

[Technical Field]

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS This application claims priority to U.S. Patent Application No. 18 / 506,935, filed November 10, 2023, and U.S. Provisional Patent Application No. 63 / 431,433, filed December 9, 2022, the contents of which are incorporated herein by reference in their entireties.

[0002] The present invention generally relates to a wafer handling end effector configured to selectively lift a wafer from its top surface, a probe system including the wafer handling end effector, and / or a method of utilizing the wafer handling end effector. [Background technology]

[0003] Wafer handling end effectors configured to selectively lift wafers from their top surfaces may be utilized by wafer handling robots to grasp, grip, lift, and / or transport wafers to and from semiconductor manufacturing equipment, sorting equipment, and / or testing equipment. Some conventional wafer handling end effectors configured to selectively lift wafers from their top surfaces are configured to contact the wafer within an edge exclusion zone of the wafer and may be configured to transport only wafers of a particular size or diameter, such as 100 millimeter (mm) diameter wafers, 200 mm diameter wafers, and / or 300 mm diameter wafers.

[0004] Other conventional wafer handling end effectors configured to selectively lift a wafer from its top surface are configured to contact a central region of the wafer containing the integrated circuit devices. Such wafer handling end effectors may be effective for selectively lifting wafers of various different sizes or diameters. However, these wafer handling end effectors may only be used with certain wafers, under certain conditions, and / or at certain steps during the manufacture of integrated circuit devices. For example, such wafer handling end effectors may contact and potentially damage the integrated circuit devices.

[0005] In some environments, it may be desirable for a particular wafer handling robot to transport wafers of different sizes by selectively lifting the wafer from its top surface and / or without contacting the integrated circuit devices formed on the wafer, however, it is generally not possible to use a single conventional wafer handling end effector for multiple wafer sizes.

[0006] Therefore, converting a particular wafer handling robot from carrying one wafer size to carrying a different wafer size typically requires replacing the wafer handling end effector for one wafer size with a wafer handling end effector for the different wafer size. This is a time-consuming process that requires removing the wafer handling end effector for one wafer size from the wafer handling robot, attaching the wafer handling end effector for the different wafer size to the wafer handling robot, and then training the wafer handling robot to operate correctly with the end effector for the different wafer size. Therefore, there is a need for an improved wafer handling end effector, a probe system including an improved wafer handling end effector, and / or a method utilizing the improved wafer handling end effector. Summary of the Invention

[0007] Disclosed herein are a wafer-handling end effector, a probe system including the wafer-handling end effector, and a method of utilizing the wafer-handling end effector. The wafer-handling end effector is configured to selectively lift a wafer from an upper surface of the wafer via pressure and includes a blade, a surface extension, and an attachment mechanism. The blade defines a wafer-facing blade side and includes a gas distribution manifold in fluid communication with the wafer-facing blade side. The surface extension defines a wafer-facing extension side that extends away from the blade. The surface extension extends at least partially around the wafer-facing blade side and includes at least three protruding regions that protrude from the wafer-facing extension side. The at least three protruding regions are configured to physically contact the upper surface of the wafer when the end effector selectively lifts the wafer. The attachment mechanism is configured to selectively attach the surface extension to the blade and selectively detach the surface extension from the blade.

[0008] The probe system is configured for testing wafers including integrated circuit devices and includes a chuck, a signal generating and signal analyzing assembly, a probe assembly, a wafer handling robot, and a pressurized gas source. The chuck defines a support surface configured to support the wafer, and the signal generating and signal analyzing assembly is configured to generate test signals and receive resulting signals. The probe assembly is configured to receive the test signals from the signal generating and signal analyzing assembly and provide the test signals to the integrated circuit devices and / or receive result signals from the integrated circuit devices and provide the result signals to the signal generating and signal analyzing assembly. The wafer handling robot is configured to position the wafer within the probe system, and the pressurized gas source is configured to selectively supply a flow of pressurized gas to the gas distribution manifold to generate a pressure that selectively lifts the wafer.

[0009] The method includes separating a first surface extension from a blade of the wafer-handling end effector, the first surface extension defining a first wafer-facing extension side with a surface area of ​​the extension facing the first wafer. The method also includes attaching a second surface extension to the blade of the wafer-handling end effector, the second surface extension defining a second wafer-facing extension side with a surface area of ​​the second wafer-facing extension different from the first wafer-facing extension surface area. [Brief explanation of the drawings]

[0010] [Figure 1] 1 is a schematic diagram illustrating an example of a probe system including a wafer handling end effector according to the present disclosure. [Figure 2] FIG. 1 is a schematic side view of an example wafer handling end effector according to the present disclosure. [Figure 3] FIG. 1 is a schematic top view of an example wafer handling end effector according to the present disclosure. [Figure 4] FIG. 1 is a schematic side view of an example wafer handling end effector according to the present disclosure. [Figure 5] FIG. 1 is a schematic top view of an example wafer handling end effector according to the present disclosure. [Figure 6] FIG. 1 is a cross-sectional view schematically illustrating an example of a wafer handling end effector according to the present disclosure. [Figure 7] 1 is a flowchart illustrating an example method of utilizing a wafer handling end effector according to the present disclosure. DETAILED DESCRIPTION OF THE INVENTION

[0011] 1-7 illustrate an example of a probe system 10, wafer handling end effector 100, and / or method 300 according to the present disclosure. In each of FIGS. 1-7, elements that serve similar or at least substantially similar purposes are numbered identically, and these elements may not be described in detail herein with reference to each of FIGS. 1-7. Similarly, while not all elements are numbered in each of FIGS. 1-7, their associated reference numbers may be used herein for consistency. Elements, components, and / or features described herein with reference to one or more of FIGS. 1-7 may be included in and / or utilized in any of FIGS. 1-7 without departing from the scope of the present disclosure.

[0012] In general, elements that may be included in a particular embodiment are shown with solid lines, and optional elements may be shown with dashed lines, although elements shown with solid lines need not be required for all embodiments and may be omitted in some embodiments without departing from the scope of the present disclosure.

[0013] 1 is a schematic diagram illustrating an example of a probe system 10 including a wafer-handling end effector 100 according to the present disclosure. As shown by the solid lines in FIG. 1, the probe system 10 includes a chuck 20, a signal generating and analyzing assembly 30, a probe assembly 40, and a wafer-handling robot 50.

[0014] The chuck 20 may define a support surface 22 configured to support a wafer 74. Examples of the chuck 20 include a shielded chuck, an electrically shielded chuck, a vacuum chuck, and / or a temperature-controlled chuck. Examples of the wafer 74 include a semiconductor wafer, a silicon wafer, a type III-V semiconductor wafer, and / or any suitable substrate on which an integrated circuit device 75 may be formed and / or defined.

[0015] The signal generating and signal analyzing assembly 30 may be configured to generate the test signal 32 and / or receive the result signal 34. Examples of the signal generating and signal analyzing assembly 30 include a test signal generator, a function generator, an electrical signal generator, an optical signal generator, a result signal receiver, a result signal analyzer, an electrical signal detector, an electrical signal analyzer, an optical detector, and / or an optical signal analyzer.

[0016] Probe assembly 40 may be configured to receive test signals 32 from signal generating and signal analyzing assembly 30 and provide the test signals to integrated circuit devices 75 on wafer 74. Additionally or alternatively, probe assembly 40 may be configured to receive result signals 34 from integrated circuit devices 75 and provide the result signals to signal generating and signal analyzing assembly 30. Integrated circuit devices 75 may manufacture and / or generate the result signals at least in part in response to receiving the test signals.

[0017] In some examples of the probe system 10, the probe assembly 40 may receive both the test signal 32 and the result signal 34. In other examples of the probe system 10, the probe assembly 40 may receive one of the test signal 32 or the result signal 34, and the other of the test signal 32 or the result signal 34 may be transmitted to the signal generating and signal analyzing assembly 30 via another structure, such as the chuck 20. The probe assembly 40 may include one or more probes 42, such as an electric probe, a contact probe, an electromagnetic probe, an optical probe, and / or a non-contact probe.

[0018] The wafer handling robot 50 is configured to position the wafer 74 within the probe system 10 and includes a wafer handling end effector 100. An example of a wafer handling robot 50 includes a robot arm, a motor, a servo motor, a stepper motor, and / or a motor controller. An example of a wafer handling end effector 100 (also referred to herein as end effector 100) is described in more detail herein.

[0019] 1 , the probe system 10 may include a wafer cassette docking port 70. The wafer cassette docking port 70 may be configured to receive a wafer cassette 72 that may contain, house, and / or store a plurality of wafers 74. An example of a wafer cassette docking port 70 includes any suitable port, surface, actuator, and / or receptacle that may be shaped, sized, and / or designed to receive, detect the presence of, and / or support the wafer cassette 72. An example of a wafer cassette 72 includes a suitable container and / or housing sized and / or configured to enclose and / or contain the wafers 74.

[0020] As shown by the dashed lines in FIG. 1 , the probe system 10 may include a pressurized gas source 60. The pressurized gas source 60 may be configured to supply or selectively supply a pressurized gas flow 62 to the end effector 100, such as, for example, the end effector's gas distribution manifold 150. The pressurized gas source 60 generates a pressure that may be utilized to selectively lift the wafer 74 with the end effector. Examples of the pressurized gas source 60 include a pressurized gas tank, a compressor, and / or a blower. Examples of the pressurized gas flow 62 include a flow of air, a flow of dry air, and / or a flow of inert gas.

[0021] 1, the support surface 22 of the chuck 20 faces generally upward and supports the wafer 74 such that the top surface 76 of the wafer 74 also faces upward. With this in mind, and as described in more detail herein, the wafer-facing end effector side 104 of the end effector 100 faces generally downward, toward the support surface 22, and / or toward the top surface 76 of the wafer 74, at least when the end effector selectively lifts the wafer, as will be described in more detail herein.

[0022] During operation of the probe system 10, the wafer handling robot 50 may be configured to retrieve a wafer 74 from the wafer cassette 72 and place the wafer on the support surface 22 of the chuck 20. This involves positioning the end effector 100 above the wafer 74 in the wafer cassette 72 and providing a pressurized gas flow 62 to the gas distribution manifold 150 to generate pressure, thereby enabling the end effector to selectively lift and / or attach to the wafer, thereby coupling the wafer to the end effector and allowing it to move with the end effector. While the pressurized gas flow is provided to the gas distribution manifold, the wafer handling robot 50 may transport the wafer above the support surface 22 and then release the wafer from the end effector by stopping the flow of the pressurized gas flow. The probe system 10 may then test the operation of one or more integrated circuit devices 75 on the wafer 74, for example, by providing test signals 32 to the integrated circuit devices and / or receiving result signals 34 from the integrated circuit devices. Following testing of the one or more integrated circuit devices, the wafer handling robot 50 may transfer the wafer 74 from the support surface 22 of the chuck 20 to the wafer cassette 72. This process may be repeated any suitable number of times to test the movement of any suitable number of wafers from the wafer cassette 72. With the above in mind, the end effector 100 may be sized and / or shaped to fit within the wafer cassette 72, for example, the gap between two adjacent wafers disposed within the wafer cassette.

[0023] The wafer handling end effector 100 is configured to generate pressure and / or lift the wafer 74 by flowing a pressurized gas flow 62 between the wafer handling end effector and the wafer, thereby creating a low-pressure region between the end effector and the wafer. This phenomenon can be explained by the Bernoulli effect and / or the cyclonic effect. As mentioned above, it may be desirable to utilize the probe system 10 with wafers 74 of various sizes or diameters. However, and as also mentioned above, conventional wafer handling end effectors configured to lift the wafer from its top surface may not be able to reliably lift wafers of multiple sizes, as described herein with reference to FIG. 1 .

[0024] With the above in mind, FIGS. 2-6 illustrate one example of a wafer handling end effector 100 that may be utilized in a probe system 10 according to the present disclosure. The wafer handling end effector 100 of FIGS. 2-6 may include and / or be a more detailed view of the wafer handling end effector 100 shown in FIG. 1. With this in mind, any of the structures, functions, and / or features disclosed herein with respect to the wafer handling end effector 100 of FIGS. 2-6 may be included in and / or utilized with the wafer handling end effector 100 and / or probe system 10 of FIG. 1 without departing from the scope of the present disclosure. Similarly, any of the structures, functions, and / or features disclosed herein with respect to the wafer handling end effector 100 and / or probe system 10 of FIG. 1 may be included in and / or utilized with the wafer handling end effector 100 of FIGS. 2-6 without departing from the scope of the present disclosure.

[0025] As collectively shown in FIGS. 2-6 , the end effector 100 includes a blade 120, a surface extension 200, and an attachment mechanism 260. The blade 120 defines a wafer-facing blade side 122 and includes a gas distribution manifold 150 in fluid communication with the wafer-facing blade side 122. The surface extension 200 defines a wafer-facing extension side 210 that extends away from the blade 120. As shown, the surface extension 200 extends at least partially around the wafer-facing blade side 122 and includes at least three protruding regions 240 that protrude from the wafer-facing extension side 210. As shown in FIG. 6 , the protruding regions 240 can be configured to physically contact the top surface 76 of the wafer 74 when the end effector selectively lifts the wafer. As described in more detail herein, the attachment mechanism 260 is configured to selectively attach the surface extension 200 to the blade 120 and to enable and / or facilitate selective detachment of the surface extension 200 from the blade 120.

[0026] Because the attachment mechanism 260 is configured to selectively attach and detach the surface extension 200 to and from the blade 120, the end effector 100 can accommodate a variety of different wafer sizes, i.e., diameters, that are not possible with conventional wafer handling end effectors that lift wafers from the top surface of the wafer. For example, the first surface extension 201, as shown in FIGS. 2-3, may be configured to lift relatively small wafers, such as 200 mm wafers, while the second surface extension 202, as shown in FIGS. 4-5, may be configured to lift relatively large wafers, such as 300 mm wafers. With this in mind, a method of utilizing the wafer handling end effector may include transitioning the wafer handling end effector from the configuration shown in FIGS. 2-3 to the configuration shown in FIGS. 4-5 by detaching the first surface extension 201 from the blade 120 and attaching the second surface extension 202 to the blade 120. The first surface extension, together with the surface area of ​​the extension facing the first wafer, may define a first wafer-facing extension side 210, and the second surface extension, together with the surface area of ​​the extension facing the second wafer, may define a second wafer-facing extension side 210. The surface area of ​​the extension facing the second wafer may be different from the surface area of ​​the extension facing the first wafer. In particular, in the example of FIGS. 2-5, the surface area of ​​the extension facing the second wafer may be larger than the surface area of ​​the extension facing the first wafer. This allows the end effector 100 configured as shown in FIGS. 4-5 to lift wafers with larger diameters compared to end effectors configured as shown in FIGS. 2-3.

[0027] 2, 4, and 6, the wafer-facing blade side 122 may define a blade-to-wafer overlap region 124, and the wafer-facing extension side 210 may define an extension-to-wafer overlap region 212. The blade-to-wafer overlap region 124 and the extension-to-wafer overlap region 212 may together define an overall overlap region 102 of the end effector 100, which may be configured to face and overlap the top surface 76 of the wafer 74 when the end effector selectively lifts the wafer. To reliably generate pressure and thereby enable reliable lifting of the wafer by the end effector, the overall size or area of ​​the overlap region 102 should correspond to, be based on, and / or be proportional to the size, diameter, or area of ​​the top surface 76 of the wafer 74. As shown by the transitions between the configurations shown in Figures 2-3 and 4-5, the blade 120 can accommodate surface extensions 200 of various sizes, so that the overall size or area of ​​the overlap region 102 can be adjusted as needed and / or based on the size of the wafer 74, thereby enabling and / or facilitating the lifting of wafers of correspondingly different sizes or diameters by the end effector 100.

[0028] The end effector 100 according to the present disclosure may provide additional and / or alternative advantages over conventional wafer handling end effectors configured to lift wafers from their upper surface. For example, adapting a conventional wafer handling robot using an end effector configured to lift wafers from their upper surface to a different wafer size typically requires completely removing the conventional end effector and replacing it with a different conventional end effector. As previously discussed, this process requires re-training the conventional wafer handling robot for the new end effector, significantly increasing the cost and / or downtime associated with removing and replacing the conventional end effector. In contrast to conventional end effectors, the wafer handling end effector 100 according to the present disclosure includes a blade 120 and a separately detachable surface extension 200. Adapting the end effector 100 to a different wafer size simply requires attaching the appropriate surface extension 200 to the blade 120. The blade 120 is never detached or removed from the wafer handling robot. Therefore, if a different surface extension 200 is fitted to the blade 120, the wafer handling robot does not need to be re-taught, reducing the cost and downtime associated with the changeover.

[0029] Blade 120 may include any suitable structure adapted, configured, designed, sized, and / or constructed to define a wafer-facing blade side 122, include a gas distribution manifold 150, and / or be operably attached to surface extension 200 via attachment mechanism 260. As shown in FIGS. 2-5 , blade 120 may include a blade attachment mechanism 134. Blade attachment mechanism 134 may be configured to facilitate operably attaching blade 120 to a wafer handling robot. Examples of blade attachment mechanism 134 include any suitable hole, receptacle, clamp, fastener, and / or hemispherical pan mechanism 135. The hemispherical pan mechanism may include an at least partially hemispherical recess, as best shown in FIGS. 2 and 4 .

[0030] The blade 120 may include and / or be an elongated blade 120 defining a longitudinal axis 136. The longitudinal axis 136 may extend from the blade attachment mechanism 134 into and / or through the blade-wafer overlap region 124.

[0031] The blade 120 also includes and / or defines an extension receiving area 138, and the surface extension 200 may periphery and / or surround the extension receiving area 138, at least in a plane extending parallel to the wafer-facing blade side 122. The extension receiving area 138 may have and / or define any suitable shape. By way of example, the extension receiving area 138 may be an arcuate extension receiving area, an at least partially circular extension receiving area, a polygonal extension receiving area, and / or an at least partially U-shaped extension receiving area.

[0032] In addition to the wafer-facing blade side 122, the blade 120 may define an opposite-wafer blade side 128 and / or a blade edge 130, which may extend between the wafer-facing blade side 122 and the opposite-wafer blade side 128. The blade edge 130 may form and / or define an extension-receiving area 138 of the blade 120. The wafer-facing blade side 122 may be a planar, or at least substantially planar, wafer-facing blade side. Similarly, the opposite-wafer blade side 128 may be a planar, or at least substantially planar, wafer-facing blade side. Such a configuration may enable and / or facilitate lifting of a wafer by the end effector 100 and / or insertion of the end effector into a wafer cassette, as described in more detail herein.

[0033] 2, 3, and 6, the blade 120 may define a blade thickness 132, or average blade thickness 132. Examples of blade thicknesses 132 include 0.5 mm or more, 0.75 mm or more, 1 mm or more, 1.25 mm or more, 1.5 mm or more, 1.75 mm or more, 2 mm or more, 2.5 mm or more, 3 mm or more, 3.5 mm or more, or 4 mm or more, 8 mm or less, 7 mm or less, 6 mm or less, 5 mm or less, 4.5 mm or less, 4 mm or less, 3.5 mm or less, 3 mm or less, 2.5 mm or less, and / or 2 mm or less.

[0034] The blade 120 and the surface extension 200 may be formed from and / or defined by any suitable material(s). The blade 120 is defined by a blade material, and the surface extension 200 is defined by an extension material. In some examples, the blade material may be the same as or similar to the extension material. In some examples, the extension material may be different from the blade material. In specific examples, the blade material may include and / or be a metal blade material, and the extension material may include and / or be a polymer extension material. Examples of polymer extension materials include polyetheretherketone, polyimide, and / or polyamide. The polymer extension material may enable and / or facilitate elastic deformation of the surface extension 200 when attaching the surface extension to the blade and / or when separating the surface extension from the blade. However, it is within the scope of this disclosure that the blade material and / or extension material may be defined by a metal, a polymer, a ceramic, and / or one or more other materials.

[0035] Gas distribution manifold 150 may include any suitable structure that is at least partially formed and / or defined within and / or by blade 120 and / or provides fluid communication with wafer-facing blade side 122 of blade 120. As an example, gas distribution manifold 150 may include a plurality of openings 152 that may be defined in the wafer-facing blade side, as best shown in FIGS. 2, 4, and 6.

[0036] 2 and 4, the openings 152 may be arranged in a plurality of concentric circles. In some examples, the plurality of concentric circles may include three, or optionally more than three, concentric circles. When the openings 152 are arranged in a plurality of concentric circles, a corresponding subset of the plurality of openings may be disposed within and / or define each concentric circle of the plurality of concentric circles.

[0037] 6 , the wafer-facing blade side 122 may define a wafer-facing blade side normal direction 126. Further, each opening 152 may extend from a plurality of corresponding fluid conduits 154, which may define a corresponding fluid flow axis 156 for the pressurized gas flow 62 to flow therethrough and / or to the wafer-facing blade side 122. Each corresponding fluid flow axis 156 may be oriented at a corresponding flow angle 158 relative to the wafer-facing blade side normal direction 126. Examples of flow angles 158 include at least 30 degrees, at least 35 degrees, at least 40 degrees, at least 45 degrees, at least 50 degrees, at least 55 degrees, at least 60 degrees, at most 80 degrees, at most 75 degrees, at most 70 degrees, at most 65 degrees, and / or at most 60 degrees.

[0038] When the openings 152 are arranged concentrically and the corresponding fluid flow axes 156 are oriented at the flow angle 158, the corresponding fluid flow axes of each fluid conduit within a given one of the concentric circles may extend at least partially along a conical surface. In other words, the fluid flow axes 156 of the fluid conduits 154 within a given concentric circle may all intersect at a common point and extend symmetrically and / or conically from the common point.

[0039] As best shown in FIGS. 2 and 4 , the blade 120 may include a wafer-present sensor opening 170. The wafer-present sensor opening may be defined within the blade-to-wafer overlap region 124. In other words, when the end effector selectively lifts the wafer, the wafer may extend across the wafer-present sensor opening 170. As best shown in FIGS. 3 and 5 , a wafer-present sensor 172 may be disposed within and / or near at least a portion of the wafer-present sensor opening 170 and configured to detect when the wafer crosses the wafer-present sensor opening and / or to detect the presence of the wafer through the wafer-present sensor opening. In other words, the wafer-present sensor may be configured to detect the wafer when the end effector selectively lifts the wafer. Examples of wafer-present sensors include optical sensors and / or capacitance sensors.

[0040] The surface extension 200 may include any suitable structure defining a wafer-facing extension side 210 and / or including at least three protruding regions 240. In some examples, the wafer-facing extension side 210 may include a planar, or at least substantially planar, wafer-facing extension side and / or may be planar, or at least substantially planar. In some examples, when the surface extension is operably attached to the blade via an attachment mechanism, the wafer-facing extension side may extend parallel to or coplanar with the wafer-facing blade side 122.

[0041] The surface extension 200 may define a wafer-facing extension side 214 and an extension edge 216 extending between the wafer-facing extension side 210 and the wafer-facing extension side 214. The wafer-facing extension side 214 may include a planar, or at least substantially planar, wafer-facing extension side 214, and / or may be a planar, or at least substantially planar, wafer-facing extension side 214, and / or may extend parallel, or at least substantially parallel, to the wafer-facing extension side 210.

[0042] 2, 4, and 6, the surface extension 200 may define an extension thickness, or average extension thickness 218. The extension thickness 218 may be measured between the extension side 210 facing the wafer and the extension side 214 facing away from the wafer. The extension thickness 218 may be equal to or similar to the blade thickness 132. Examples of ratios of the extension thickness 218 to the blade thickness 132 include at least 0.5, at least 0.6, at least 0.7, at least 0.8, at least 0.9, at least 1, at most 2, at most 1.8, at most 1.6, at most 1.4, at most 1.2, at most 1, and / or 1.

[0043] The surface extension 200 defines a blade receiving area 220 into which the blade 120 may extend, at least when the surface extension is operably attached to the blade via the attachment mechanism 260. The blade receiving area may be shaped such that the extended edge 216 of the surface extension 200 receives the extension receiving area 138 of the blade 120. With this in mind, the shape of the blade receiving area 220 may match or complement the shape of the extension receiving area 138. Examples of blade receiving area shapes include an arcuate blade receiving area, an at least partially circular blade receiving area, and / or an at least partially U-shaped blade receiving area.

[0044] The protruding regions 240 may include any suitable structure and / or shape that may protrude from the extension side 210 facing the wafer, that may protrude toward the wafer as the end effector selectively lifts the wafer, and / or that may be configured to physically contact the top surface of the wafer as the end effector selectively lifts the wafer. The surface extension 200 may include any suitable number of protruding regions 240, including three protruding regions, four protruding regions, five protruding regions, or six protruding regions. As shown in FIGS. 2 and 4 , the protruding regions 240 may be symmetrically arranged about the longitudinal axis 136 of the blade 120.

[0045] The protruding region 240 may be configured to physically contact the top surface of the wafer in any suitable manner. For example, as best shown in Figures 1, 3, and 5, the protruding region 240 may be configured to physically contact the top surface 76 of the wafer 74 within an edge exclusion region 78 of the wafer 74. As used herein, the phrase "edge exclusion region" includes and / or may be an annular region within a threshold exclusion distance 79 from the outer periphery of the wafer and / or an annular region in which no integrated circuit devices 75 are present. Examples of threshold exclusion distances include up to 2 mm, up to 3 mm, up to 4 mm, or up to 5 mm.

[0046] When the end effector 100 includes a protruding region 240 configured to contact the top surface 76 of the wafer 74 within the edge exclusion region 78, the ability of the end effector 100 to utilize different surface extensions 200 and / or interchange one surface extension 200 with a different surface extension 200 may provide further advantages over conventional wafer handling end effectors configured to selectively lift a corresponding wafer from its top surface. As an example, as best shown by a comparison of Figures 3 and 5, the location of the protruding region 240 may be varied or selected for a given surface extension 200 such that the corresponding protruding region 240 contacts a corresponding wafer size or diameter within the corresponding edge exclusion region 78 of that wafer size.

[0047] As an example, the protruding regions 240 may be at least partially or completely disposed within an annular region corresponding to the shape of the corresponding edge exclusion region. Additionally, or alternatively, the protruding regions 240 may extend only within a region radially outward from the inner periphery of the edge of the corresponding edge exclusion region. Thus, as illustrated, the size and / or diameter of this annular region may vary based on the size and / or diameter of the wafer that a given surface extension is configured to lift.

[0048] 6 , the protrusion region 240 protrudes from the wafer-facing extension side 210 of the surface extension 200 by a protrusion distance 242. The end effector 100 utilizes positive airflow from the gas distribution manifold 150 to generate pressure to lift the wafer, causing the wafer to naturally suspend, or levitate, the end effector by a levitation distance. This levitation distance is defined by various parameters, including the surface area of ​​the entire overlap region 102, the weight of the wafer, and the flow rate of the positive airflow (i.e., pressurized gas flow 62). In other words, the end effector 100 may be configured to lift the wafer 74 without direct physical contact between the wafer-facing blade side 122 and the wafer and / or without direct physical contact between the wafer-facing extension side 210 and the wafer.

[0049] With this in mind, the protrusion distance 242 may be selected to be greater than the flying distance. Thus, pressure contacts the wafer against the protruding region 240, creating a static friction force between the protruding end 244 of the protruding region and the wafer. This static friction force resists sliding motion between the end effector and the wafer, holding the wafer on the end effector as it moves through the probe system. Examples of protrusion distances 242 include: 0.1 mm or greater, 0.2 mm or greater, 0.3 mm or greater, 0.4 mm or greater, 0.5 mm or greater, 0.6 mm or greater, 0.7 mm or greater, 0.8 mm or greater, 0.9 mm or greater, 1 mm or greater, 1.5 mm or less, 1.4 mm or less, 1.3 mm or less, 1.2 mm or less, 1.1 mm or less, 1 mm or less, 0.9 mm or less, 0.8 mm or less, 0.7 mm or less, 0.6 mm or less, and / or 0.5 mm or less.

[0050] The plurality of protruding ends 244 of the protruding region 240 may have and / or define any suitable shape and / or relative orientation. As one example, the plurality of protruding ends 244 may be planar, or at least substantially planar, of the plurality of protruding ends 244. As another example, the protruding end of each protruding region 240 may be coplanar, or at least substantially coplanar, with the protruding ends of each other protruding region 240, and / or may be parallel, or at least substantially parallel, to the extension side 210 facing the wafer.

[0051] As described above, the end effector 100 may be configured to utilize different surface extensions 200 of different sizes and / or shapes to facilitate lifting of wafers of different shapes, sizes, and / or diameters. With this in mind, in some examples, the end effector 100 may include multiple surface extensions 200, each configured to be individually and selectively attached to and / or separated from a blade 120 or a single blade 120. As an example, the multiple surface extensions 200 may include a first surface extension 201 shown in FIG. 2 and a second surface extension 202 shown in FIG. 4. In other words, the end effector 100 may include a first surface extension, such as the surface extension 200 shown in FIG. 2, and a second surface extension, such as the surface extension 200 shown in FIG. 4. It is within the scope of this disclosure that the end effector 100 may include additional surface extensions, such as three, four, five, six, or more surface extensions, each configured to be individually and selectively attached to and / or detached from the blade 120, such as to lift wafers of three, four, five, six, or more sizes and / or diameters.

[0052] In such a configuration, the attachment mechanism 260 may be configured to allow and / or facilitate selective attachment and detachment of the first surface extension or the second surface extension at a given time, although the end effector may not be configured to use both the first surface extension and the second surface extension simultaneously.

[0053] The first surface extension may define a shape of the first surface extension, and the second surface extension may define a shape of the second surface extension that differs from the shape of the first surface extension. For example, the first surface extension may be sized, shaped, and / or configured to lift a first wafer having a first diameter, such as, for example, 200 mm, and the second surface extension may be sized, shaped, and / or configured to lift a second wafer having a second diameter, such as, for example, 300 mm.

[0054] As described above, the protruding regions 240 may be configured to physically contact the top surface of the wafer within the wafer's edge exclusion zone. With this in mind, the first surface extension may include at least three first protruding regions, and the second surface extension may include at least three second protruding regions, with the relative orientation of the at least three first protruding regions being different from the relative orientation of the at least three second protruding regions. For example, the relative orientation of the at least three first protruding regions may be configured such that the at least three first protruding regions contact a 200 mm wafer within the corresponding edge exclusion zone of the 200 mm wafer, and the relative orientation of the at least three second protruding regions may be configured such that the at least three second protruding regions contact a 300 mm wafer within the corresponding edge exclusion zone of the 300 mm wafer.

[0055] In other words, the at least three first protruding regions may be positioned to contact an annular surface having an outer diameter of 200 mm and a width defined by the threshold exclusion zone distance, while the at least three second protruding regions may be positioned to contact an annular surface having an outer diameter of 300 mm and a width defined by the threshold exclusion zone distance. While wafers having outer diameters of 200 mm and 300 mm are used herein as examples, it is within the scope of this disclosure that the end effector 100 may be configured to lift wafers of other diameters and / or that the at least three protruding regions 240 may be configured to contact corresponding edge exclusion zones of wafers of other diameters. Examples of such other diameters include, but are not limited to, diameters or nominal diameters of 25 mm, 50 mm, 75 mm, 100 mm, 125 mm, 150 mm, 200 mm, 300 mm, and / or 450 mm.

[0056] The attachment mechanism 260 may include any suitable structure that may be adapted, configured, designed, shaped, sized, and / or constructed to enable and / or facilitate selective attachment of the surface extension 200 to the blade 120 and selective separation of the surface extension from the blade 120. Examples of attachment mechanisms 260 include catches, levers, cams, fasteners, keyed regions, protruding regions, recessed regions, friction fits, elastic fits, adhesive connections, magnetic connections, vacuum connections, and / or electrostatic connections, etc.

[0057] The overall overlap region 102 can define an overall overlap surface area that may be a threshold overlap percentage of the wafer surface area of ​​the top surface of the wafer. In other words, the end effector 100 may overlap the top surface of the wafer by a threshold overlap percentage. Examples of threshold overlap percentages include at least 50%, at least 55%, at least 60%, at least 65%, at least 70%, at least 75%, at least 80%, at least 85%, up to 95%, up to 92.5%, up to 90%, up to 87.5%, up to 85%, up to 82.5%, and / or up to 80%. The threshold overlap surface area and / or threshold overlap percentage may be selected to provide a desired normal force between the protruding region 240 and the top surface of the wafer when the end effector selectively lifts the wafer. For example, the threshold overlap surface area and / or threshold overlap percentage may be increased to increase normal force and / or decreased to decrease normal force.

[0058] The blade-to-wafer overlap area 124 may have and / or define a blade-to-wafer overlap area that is a threshold blade overlap percentage of the total overlap area. Examples of threshold blade overlap percentages include at least 25%, at least 30%, at least 35%, at least 40%, at least 45%, at least 50%, at least 55%, at least 60%, at least 65%, at least 70%, at least 75%, at least 80%, at least 85%, up to 95%, up to 90%, up to 85%, up to 80%, up to 75%, up to 70%, up to 65%, up to 60%, up to 55%, up to 50%, up to 45%, and / or up to 40%. The threshold blade overlap percentage may vary depending on the size of the surface extension 200.

[0059] 7 is a flow chart diagram illustrating an example method 300 for selectively lifting a wafer from its top surface and / or by pressure using a wafer handling end effector according to the present disclosure. Method 300 includes positioning a first wafer using the end effector in step 310 and detaching a first surface extension in step 320. Method 300 also includes attaching a second surface extension in step 330 and positioning a second wafer using the end effector in step 340.

[0060] In step 320, the separating step may include separating the first surface extension from the blade of the end effector. Examples of first surface extensions and blades are disclosed herein. The first surface extension, together with a surface area of ​​the extension facing the first wafer, may define a side of the extension facing the first wafer. In some examples, in step 320, the separating step includes elastically deforming the first surface extension.

[0061] In step 330, the attaching step may include attaching a second surface extension to the blade of the end effector. An example of a second surface extension is disclosed herein. The second surface extension, together with a surface area of ​​the extension facing the second wafer, may define a side of the extension facing the second wafer. The surface area of ​​the extension facing the second wafer may be different, smaller, and / or larger than the surface area of ​​the extension facing the first wafer. In some examples, in step 330, the attaching step may include elastically deforming the second surface extension. In some examples, in step 330, the attaching step may include attaching with, through, and / or utilizing an attachment mechanism of the end effector, examples of which are disclosed herein.

[0062] It is within the scope of this disclosure that method 300 may include performing the detaching step 320 and the attaching step 330 with the blade secured to a wafer handling robot, which may facilitate lifting the wafer after the attaching step 330 and / or performing the utilizing step 340 without the need or need to teach the robot first.

[0063] The utilizing step in step 340 may include using the end effector to position a first wafer in and / or relative to the probe system. The utilizing step in step 340 may include using the end effector to position a second wafer in and / or relative to the probe system. The first wafer may have a first diameter and the second wafer may have a second diameter different from the first diameter. The utilizing step in step 310 may occur before the separating step in step 320, and the utilizing step in step 340 may occur after the attaching step in step 330. Thus, the separating step in step 320 and the attaching step in step 330 may be used to adjust and / or adapt the end effector from a first wafer of a first diameter to a second wafer of a second diameter.

[0064] As used herein, the term "and / or" between a first entity and a second entity means either (1) the first entity, (2) the second entity, or (3) either the first entity or the second entity. Multiple entities listed with "and / or" should be construed in the same manner, i.e., "one or more" of the combined entities. Entities other than those specifically identified by the "and / or" clause may optionally be present, whether related to those specifically identified entities or not. Thus, as a non-limiting example, a reference to "A and / or B," when used in conjunction with an open-ended expression such as "comprising," may, in one embodiment, refer to A only (optionally including entities other than B), in another embodiment to B only (optionally including entities other than A), or in yet another embodiment to both A and B (optionally including other entities). These entities may refer to elements, actions, structures, steps, operations, values, etc.

[0065] As used herein, the phrase "at least one" when used in reference to a list of one or more entities should be understood to mean at least one entity selected from any one or more entities in the list of entities, but not necessarily including at least one of all entities specifically set forth in the list of entities, and not excluding any combination of entities in the list of entities. This definition also allows for the optional presence of entities other than those specifically identified in the list of entities to which the phrase "at least one" refers, whether or not related to those specifically identified entities. Thus, as a non-limiting example, "at least one of A and B" (or, synonymously, "at least one of A or B," or, synonymously, "at least one of A and / or B") may, in one embodiment, refer to at least one A (and optionally including entities other than A) in the absence of B (and optionally including entities other than B). In another embodiment, it may refer to at least one B (and optionally including entities other than A) in the absence of A (and optionally including entities other than A). In yet another embodiment, it refers to at least one (optionally including one or more) A and at least one (optionally including one or more) B (and optionally including other entities). In other words, the terms "at least one," "one or more," and "and / or" are open-ended expressions that function as both conjunctions and disjunctions. For example, the phrases "at least one of A, B, and C," "at least one of A, B, or C," "one or more of A, B, and C," "one or more of A, B, or C," and "A, B, and / or C" may each refer to A alone, B alone, C alone, A and B in combination, A and C in combination, B and C in combination, A, B, and C in combination, and optionally any of the above in combination with at least one other entity.

[0066] If a patent, patent application, or other reference is incorporated herein by reference and (1) defines a term in a manner that is inconsistent with either the unincorporated portion of this disclosure or the other incorporated reference, and / or (2) is otherwise inconsistent, then the unincorporated portion of this disclosure shall control and the term contained therein or the incorporated disclosure shall control only with respect to the reference in which the term is defined and / or the reference in which the incorporated disclosure originally resided.

[0067] As used herein, the terms "adapted" and "configured" mean that an element, component, or other subject matter is designed and / or intended to perform a particular function. Thus, use of the terms "adapted" and "configured" should not be interpreted to mean that a particular element, component, or other subject matter is merely "capable of" performing a particular function, but rather that the element, component, and / or other subject matter is specifically selected, created, implemented, utilized, programmed, and / or designed for the purpose of performing that function. Also, elements, components, and / or other subject matter that are described as adapted to perform a particular function may additionally or alternatively be described as being configured to perform that function, and vice versa.

[0068] As used herein, the phrases "for example," "as an example," and / or simply "example," when used with respect to one or more components, features, details, structures, embodiments, and / or methods according to the present disclosure, are intended to indicate that the described components, features, details, structures, embodiments, and / or methods are illustrative, non-exclusive examples of the components, features, details, structures, embodiments, and / or methods according to the present disclosure. As such, the described components, features, details, structures, embodiments, and / or methods are not intended to be limiting, essential, or exclusive / exhaustive. Other components, features, details, structures, embodiments, and / or methods, including structurally and / or functionally similar and / or equivalent components, features, details, structures, embodiments, and / or methods, are also within the scope of the present disclosure.

[0069] As used herein, "at least substantially," when modifying a degree or relationship, can include not only the "substantial" degree or relationship described, but also the entire range of the described degree or relationship. A substantial amount of a described degree or relationship can include at least 75% of the described degree or relationship. For example, an object at least substantially formed from a material includes an object in which at least 75% of the object is formed from that material, and also includes an object formed entirely from that material. As another example, a first length that is at least substantially the same as a second length includes a first length that is within 75% of the second length, and also includes a first length that is the same as the second length.

[0070] Illustrative, non-exclusive examples of wafer handling end effectors, probe systems, and methods according to the present disclosure are set forth in the enumerated paragraphs below. Individual steps of the methods described herein, including in the enumerated paragraphs below, may additionally or alternatively be referred to as "steps" for performing the described actions, and this is within the scope of the present disclosure.

[0071] A1 1. A wafer handling end effector configured to selectively lift a wafer from a top surface of the wafer via pressure, comprising: The end effector is a blade defining a blade side facing a wafer, the blade including a gas distribution manifold in fluid communication with the blade side facing the wafer; a surface extension defining a wafer-facing extension side extending away from the blade, the surface extension extending at least partially around the wafer-facing blade side, and the surface extension including at least three protruding regions protruding from the wafer-facing extension side; an attachment mechanism configured to selectively attach the surface extension to the blade and selectively detach the surface extension from the blade; Equipped with Optionally, a side of the blade facing the wafer defines a blade-to-wafer overlap area, and a side of the extension facing the wafer defines a extension-to-wafer overlap area, the blade-to-wafer overlap area and the extension-to-wafer overlap area together define an overall wafer overlap area of ​​the end effector, and further configured such that the overall wafer overlap area faces and overlaps a top surface of the wafer when the end effector selectively lifts the wafer; Optionally, the at least three protruding regions are configured to physically contact the top surface of the wafer when the end effector selectively lifts the wafer. End effector.

[0072] A2 1. The end effector of claim A1, The blade further comprises a blade mounting structure configured to facilitate operative mounting of the blade to a wafer handling robot.

[0073] A3 The end effector according to any one of paragraphs A1 to A2, The blade is an elongated blade defining a longitudinal axis.

[0074] A4 1. The end effector of claim A3, The longitudinal axis extends from the blade mounting structure of the blade to the blade-to-wafer overlap region.

[0075] A5 An end effector according to any one of paragraphs A1 to A4, The blade includes an extension receiving area, and further, a surface extension extends around the extension receiving area.

[0076] A6 1. The end effector of claim A5, The extension-receiving area comprises: (i) Arcuate extension-receiving region (ii) an at least partially circular extension-receiving region; (iii) an at least partially U-shaped extension-receiving region; (iv) Polygonal extension receiving region At least one of the following is true:

[0077] A7 The end effector according to any one of paragraphs A1 to A6, The wafer-facing blade side is a planar, at least substantially planar, wafer-facing blade side.

[0078] A8 The end effector according to any one of paragraphs A1 to A7, The blade defines a blade side opposite the wafer and a blade edge extending between the blade side facing the wafer and the blade side opposite the wafer.

[0079] A9 10. The end effector of claim A8, The side of the blade opposite the wafer is a planar, or at least substantially planar, side of the blade opposite the wafer.

[0080] A10 The end effector according to any one of paragraphs A8 to A9, The blade edge defines an extension-receiving area of ​​the blade.

[0081] A11 The end effector according to any one of paragraphs A8 to A10, The blade defines a blade thickness, or average blade thickness, between the side of the blade facing the wafer and the side of the blade opposite the wafer.

[0082] A12 1. The end effector of claim A11, The blade thickness is at least one of the following: (i) 0.5 millimeters (mm) or more, 0.75 mm or more, 1 mm or more, 1.25 mm or more, 1.5 mm or more, 1.75 mm or more, 2 mm or more, 2.5 mm or more, 3 mm or more, 3.5 mm or more, or 4 mm or more. (ii) 8 mm or less, 7 mm or less, 6 mm or less, 5 mm or less, 4.5 mm or less, 4 mm or less, 3.5 mm or less, 3 mm or less, 2.5 mm or less, and / or 2 mm or less;

[0083] A13 The end effector according to any one of paragraphs A1 to A12, The blade is defined by a blade material; the surface extensions are defined by an extension material; Optionally, said elongated material is the same as said blade material; Optionally, said elongated material is different from said braid material.

[0084] A14 1. The end effector of claim A13, The blade material is at least one of a metal blade material, a polymer blade material, and a ceramic blade material.

[0085] A15 The end effector according to any one of paragraphs A13 to A14, The elongated material is at least one of a metallic elongated material, a polymeric elongated material, and a ceramic elongated material.

[0086] A16 The end effector according to any one of paragraphs A1 to A15, The gas distribution manifold includes a plurality of openings defined in the side of the blade facing the wafer.

[0087] A17 10. The end effector of claim A16, The plurality of openings are arranged in a plurality of concentric circles.

[0088] A18 10. The end effector of claim A17, The plurality of concentric circles includes at least three concentric circles.

[0089] A19 An end effector according to any one of paragraphs A17 to A18, A corresponding subset of the plurality of openings is disposed within each of the plurality of concentric circles.

[0090] A20 An end effector according to any one of paragraphs A16 to A19, the blade side facing the wafer defines a blade side normal direction facing the wafer; the plurality of openings extending from a plurality of corresponding fluid conduits; each fluid conduit in the plurality of corresponding fluid conduits defines a corresponding fluid flow axis; Furthermore, the corresponding fluid flow axes of the respective fluid conduits are oriented at corresponding flow angles relative to a direction normal to the blade side facing the wafer.

[0091] A21 1. The end effector of paragraph A20, comprising: The corresponding flow angle is at least one of the following: (i) 30 degrees or more, 35 degrees or more, 40 degrees or more, 45 degrees or more, 50 degrees or more, 55 degrees or more, or 60 degrees or more. (ii) 80 degrees or less, 75 degrees or less, 70 degrees or less, 65 degrees or less, or 60 degrees or less.

[0092] A22 The end effector according to any one of paragraphs A20 to A21, the plurality of openings are arranged in a plurality of concentric circles; Furthermore, the corresponding flow angles of the respective fluid conduits of the respective openings within a given one of the plurality of concentric circles extend at least partially along a conical surface.

[0093] A23 The end effector according to any one of paragraphs A16 to A22, The gas distribution manifold is configured to supply a pressurized gas flow to the side of the blade facing the wafer through a plurality of openings.

[0094] A24 The end effector according to any one of paragraphs A1 to A23, The gas distribution manifold is configured to allow a wafer handling end effector to selectively lift a wafer via at least one of a Bernoulli effect and a cyclonic effect.

[0095] A25 An end effector according to any one of paragraphs A1 to A24, The blade further includes a wafer present sensor opening defined within an overlap region of the blade and wafer.

[0096] A26 1. The end effector of paragraph A25, The end effector further comprises a wafer presence sensor configured to detect the wafer as the end effector selectively lifts the wafer.

[0097] A27 An end effector according to any one of paragraphs A1 to A26, The side of the extension facing the wafer is flush, or at least substantially flush, with the side of the blade facing the wafer.

[0098] A28 An end effector according to any one of paragraphs A1 to A27, The wafer-facing extension side is the side of the extension that faces a planar wafer.

[0099] A29 An end effector according to any one of paragraphs A1 to A28, The side of the extension facing the wafer extends parallel, or at least substantially parallel, to the side of the blade facing the wafer.

[0100] A30 An end effector according to any one of paragraphs A1 to A29, The surface extension defines a side of the extension opposite the wafer and an extension edge extending between the side of the extension facing the wafer and the side of the extension opposite the wafer.

[0101] A31 1. The end effector of paragraph A30, comprising: The side of the extension opposite the wafer is a planar, or at least substantially planar, side of the extension opposite the wafer.

[0102] A32 An end effector according to any one of paragraphs A30 to A31, The surface extension defines the extension thickness between the side of the extension facing the wafer and the side of the extension facing away from the wafer, or the average extension thickness.

[0103] A33 1. The end effector of paragraph A32, The blade has an extension thickness to blade thickness ratio of at least one of the following: (i) 0.5 or greater, 0.6 or greater, 0.7 or greater, 0.8 or greater, 0.9 or greater, or 1 or greater. (ii) 2 or less, 1.8 or less, 1.6 or less, 1.4 or less, 1.2 or less, or 1 or less.

[0104] A34 An end effector according to any one of paragraphs A1 to A33, The surface extension defines a blade receiving area, and the blade extends into the blade receiving area.

[0105] A35 1. The end effector of paragraph A34, The blade receiving area is at least one of the following: (i) Arcuate blade receiving area. (ii) an at least partially circular blade receiving area; (iii) an at least partially U-shaped blade receiving area;

[0106] A36 An end effector according to any one of paragraphs A34 to A35, The blade receiving area is shaped to receive the extension receiving area of ​​the blade.

[0107] A37 An end effector according to any one of paragraphs A34 to A36, The blade receiving area is defined by an extending edge of a surface extension.

[0108] A38 An end effector according to any one of paragraphs A1 to A37, The at least three projecting regions include three, four, five, or six projecting regions.

[0109] A39 An end effector according to any one of paragraphs A1 to A38, The end effector has at least three protruding regions that protrude toward the wafer when selectively lifting the wafer.

[0110] A40 An end effector according to any one of paragraphs A1 to A39, The at least three protruding regions are symmetrically arranged about the longitudinal axis of the blade.

[0111] A41 The end effector according to any one of paragraphs A1 to A40, The at least three protruding regions are configured to physically contact the top surface of the wafer within the edge exclusion region of the wafer.

[0112] A42 1. The end effector of paragraph A41, The edge exclusion region of the wafer is defined as an annular region within a threshold exclusion distance from the outer periphery of the wafer, optionally the threshold exclusion distance is up to 2 mm, up to 3 mm, up to 4 mm, or up to 5 mm.

[0113] A43 An end effector according to any one of paragraphs A1 to A42, The at least three protruding regions protrude from the extension side facing the wafer by a threshold protrusion distance, optionally the threshold protrusion distance is at least one of the following: (i) 0.1 mm or more, 0.2 mm or more, 0.3 mm or more, 0.4 mm or more, 0.5 mm or more, 0.6 mm or more, 0.7 mm or more, 0.8 mm or more, 0.9 mm or more, or 1 mm or more. (ii) 1.5 mm or less, 1.4 mm or less, 1.3 mm or less, 1.2 mm or less, 1.1 mm or less, 1 mm or less, 0.9 mm or less, 0.8 mm or less, 0.7 mm or less, 0.6 mm or less, or 0.5 mm or less;

[0114] A44 An end effector according to any one of paragraphs A1 to A43, When the end effector selectively lifts the wafer, the at least three protruding regions are configured to resist sliding movement relative to the wafer by static friction forces between the wafer and the protruding ends of each of the at least three protruding regions.

[0115] A45 An end effector according to any one of paragraphs A1 to A44, The protruding end of each of the at least three protruding regions is a planar, or at least substantially planar, protruding end.

[0116] A46 An end effector according to any one of paragraphs A1 to A45, The protruding ends of each of the at least three protruding regions are flush with the protruding ends of each of the at least three protruding regions.

[0117] A47 An end effector according to any one of paragraphs A1 to A46, the end effector includes a plurality of surface extensions; Further, each surface extension of the plurality of surface extensions is configured to be individually and selectively attached to and separated from the blade via the attachment mechanism.

[0118] A48 An end effector according to any one of paragraphs A1 to A47, The surface extension is a first surface extension, and the end effector further includes a second surface extension.

[0119] A49 1. The end effector of paragraph A48, comprising: The end effector is configured such that the attachment mechanism can selectively attach and detach one or only one of the first surface extension and the second surface extension to and from the blade at a given time.

[0120] A50 An end effector according to any one of paragraphs A48 to A49, The first surface extension defines a first surface extension shape, and the second surface extension defines a second surface extension shape that is different from the shape of the first surface extension.

[0121] A51 An end effector according to any one of paragraphs A48 to A50, The first surface extension is sized to enable the end effector to selectively lift a first wafer having the first diameter, and the second surface extension is sized to enable the end effector to selectively lift a second wafer having a second diameter different from the first diameter.

[0122] A52 An end effector according to any one of paragraphs A48 to A51, The first surface extension is sized to enable the end effector to selectively lift one of a 25 mm diameter wafer, a 50 mm diameter wafer, a 75 mm diameter wafer, a 100 mm diameter wafer, a 125 mm diameter wafer, a 150 mm diameter wafer, a 200 mm diameter wafer, a 300 mm diameter wafer, or a 450 mm diameter wafer, and the second surface extension is sized to enable the end effector to selectively lift another one of a 25 mm diameter wafer, a 50 mm diameter wafer, a 75 mm diameter wafer, a 100 mm diameter wafer, a 125 mm diameter wafer, a 150 mm diameter wafer, a 200 mm diameter wafer, a 300 mm diameter wafer, or a 450 mm diameter wafer.

[0123] A53 An end effector according to any one of paragraphs A48 to A52, The first surface extension includes at least three first projecting regions, and the second surface extension includes at least three second projecting regions, and further, the relative orientation of the at least three first projecting regions is different from the relative orientation of the at least three second projecting regions.

[0124] A54 1. The end effector of paragraph A53, The relative orientations of the at least three first protruding regions are configured so that the at least three first protruding regions contact any one of a 25 mm diameter wafer, a 50 mm diameter wafer, a 75 mm diameter wafer, a 100 mm diameter wafer, a 125 mm diameter wafer, a 150 mm diameter wafer, a 200 mm diameter wafer, a 300 mm diameter wafer, or a 450 mm diameter wafer within an edge exclusion region of the corresponding wafer, and the relative orientations of the at least three second protruding regions are configured so that the at least three second protruding regions contact any one of a 25 mm diameter wafer, a 50 mm diameter wafer, a 75 mm diameter wafer, a 100 mm diameter wafer, a 125 mm diameter wafer, a 150 mm diameter wafer, a 200 mm diameter wafer, a 300 mm diameter wafer, or a 450 mm diameter wafer within an edge exclusion region of the corresponding wafer.

[0125] A55 An end effector according to any one of paragraphs A1 to A54, The attachment mechanism includes at least one of a catch, a lever, a cam, a fastener, a keyed area, a protruding area, a recessed area, a friction fit, a resilient fit, an adhesive connection, a magnetic connection, a vacuum connection, and an electrostatic connection.

[0126] A56 An end effector according to any one of paragraphs A1 to A55, The total overlap surface area of ​​the total overlap region of the wafer is a threshold overlap percentage of the wafer surface area of ​​the top surface of the wafer, the threshold overlap percentage being at least one of the following: (i) At least 50%, at least 55%, at least 60%, at least 65%, at least 70%, at least 75%, at least 80%, or at least 85%. (ii) up to 95%, up to 92.5%, up to 90%, up to 87.5%, up to 85%, up to 82.5%, or up to 80%.

[0127] A57 An end effector according to any one of paragraphs A1 to A56, When the end effector selectively lifts the wafer, the total overlapping surface area across the wafer overlap region is selected to provide a desired normal force between the at least three protruding regions and the top surface of the wafer.

[0128] A58 An end effector according to any one of paragraphs A1 to A57, The blade-to-wafer overlap area has a blade-to-wafer overlap area that is a threshold blade overlap area percentage of the total overlap area, and further, the threshold blade overlap area percentage is at least one of the following: (i) At least 25%, at least 30%, at least 35%, at least 40%, at least 45%, at least 50%, at least 55%, at least 60%, at least 65%, at least 70%, at least 75%, at least 80%, or at least 85%. (ii) up to 95%, up to 90%, up to 85%, up to 80%, up to 75%, up to 70%, up to 65%, up to 60%, up to 55%, up to 50%, up to 45%, or up to 40%.

[0129] A59 An end effector according to any one of paragraphs A1 to A58, It is sized to fit within a gap in a wafer cassette configured to accommodate multiple wafers.

[0130] A60 An end effector according to any one of paragraphs A1 to A59, The end effector is configured to lift the wafer without direct physical contact with at least one of the following: (i) Direct physical contact between the blade side facing the wafer and the wafer. (ii) Direct physical contact of the wafer with the side of the extension facing the wafer.

[0131] A61 The end effector according to any one of paragraphs A1 to A60, The end effector includes the wafer.

[0132] B1 1. A probe system configured for testing a wafer including integrated circuit devices, comprising: The probe system comprises: a chuck defining a support surface configured to support the wafer; a signal generation and signal analysis assembly configured to generate a test signal and receive a resulting signal; (i) receiving the test signal from the signal generating and signal analyzing assembly and providing the test signal to the integrated circuit device; (ii) receiving a result signal from the integrated circuit device and providing the result signal to the signal generating and signal analyzing assembly; a probe assembly configured to perform at least one of: a wafer handling robot configured to position the wafer within the probe system; Equipped with The wafer handling robot includes the end effector described in any one of paragraphs A1 to A61.

[0133] B2 10. The probe system of claim 8, further comprising: The probe system further comprises a wafer cassette docking port configured to receive a wafer cassette containing the wafer.

[0134] B3 1. The probe system of claim B2, The wafer handling robot is configured to do at least one of the following: (i) transferring the wafer from the wafer cassette to the chuck; (ii) transferring the wafer from the chuck to the wafer cassette;

[0135] B4 The probe system according to any one of paragraphs B1 to B3, The system further comprises a pressurized gas source configured to selectively supply a flow of pressurized gas to the gas distribution manifold to generate a pressure that selectively lifts the wafer.

[0136] B5 The probe system according to any one of paragraphs B1 to B4, At least one of the following: (i) The support surface faces upward. (ii) The top surface of the wafer faces upward. (iii) The blade side facing the wafer faces downward. (iv) The side of the extension facing the wafer faces downward.

[0137] C1 1. A method utilizing a wafer handling end effector configured to selectively lift a wafer from a top surface of the wafer via pressure, comprising: separating a first surface extension from a blade of the wafer handling end effector, the first surface extension defining a first wafer-facing extension side along with a surface area of ​​the extension facing the first wafer; attaching a second surface extension to the wafer handling end effector blade, the second surface extension defining a second wafer-facing extension side with a second wafer-facing extension surface area different from the first wafer-facing extension surface area; Includes.

[0138] C2 The method of paragraph C1, comprising: (i) the separating step includes the step of elastically deforming the first surface extension. (ii) the attaching step includes the step of elastically deforming the second surface extension.

[0139] C3 The method of any one of paragraphs C1-C2, comprising: The attaching step includes attaching via a mounting mechanism of a wafer handling end effector.

[0140] C4 The method of any one of paragraphs C1 to C3, comprising: The separating and attaching steps are performed while the blade is secured to a wafer handling robot.

[0141] C5 The method of any one of paragraphs C1 to C4, comprising: After the step of attaching, the step of lifting the wafer is further included, and further includes the step of performing the wafer lifting without first teaching the robot.

[0142] C6 The method of any one of paragraphs C1 to C5, The method includes, prior to the separating step, using the end effector to position a first wafer of a first diameter, and further includes, after the attaching step, using the end effector to position a second wafer of a second diameter different from the first diameter.

[0143] C7 The method of any one of paragraphs C1 to C6, comprising: The wafer handling end effector includes any suitable structure of the end effector described in any one of paragraphs A1-A61. [Industrial Applicability]

[0144] The end effectors, probe systems, and methods disclosed herein are applicable to the semiconductor manufacturing and testing industries.

[0145] The above disclosure is believed to encompass multiple distinct inventions with independent utility. While each of these inventions is disclosed in a preferred form, the specific embodiments disclosed and illustrated herein are not to be construed in a limiting sense, as numerous variations are possible. The subject matter of the inventions includes all novel and non-obvious combinations and subcombinations of the various elements, features, functions and / or properties disclosed herein. Similarly, when a claim refers to an element "a" or "the first," or the equivalent, such claim should be understood to include the incorporation of one or more of such elements, and does not require or exclude more than one of such elements.

[0146] The following claims are believed to be directed to one of the disclosed inventions and to particularly point out certain novel and unobvious combinations and subcombinations. Inventions embodied in other combinations and subcombinations of features, functions, elements and / or properties may be claimed by amending the present claims or by presenting new claims in this or a related application. Such modified or new claims, whether directed to a different invention or the same invention, or whether different, broader, narrower, or equal in scope to the original claims, are deemed to be encompassed within the inventive subject matter of this disclosure. [Explanation of symbols]

[0147] 10 Probe System 20. Chuck 30 Signal Generation and Signal Analysis Assembly 32 Test Signal 34 Result Signal 40 Probe Assembly 50 Wafer Handling Robot 60 Pressurized gas source 62 Pressurized Gas Flow 70 Wafer cassette docking port 72 wafer cassette 74 wafers 75 Integrated Circuit Devices 100 Wafer Handling End Effector 120 blades 200 Surface extension 260 Mounting mechanism

Claims

1. 1. A wafer handling end effector configured to selectively lift a wafer from a top surface of the wafer via pressure, comprising: The end effector is a blade defining a blade side facing a wafer, the blade including a gas distribution manifold in fluid communication with the blade side facing the wafer; a surface extension defining a wafer-facing extension side extending away from the blade, the surface extension extending at least partially around the wafer-facing blade side, the surface extension further including at least three protruding regions protruding from the wafer-facing extension side, the at least three protruding regions configured to physically contact the top surface of the wafer when the end effector selectively lifts the wafer; an attachment mechanism configured to selectively attach the surface extension to the blade and selectively detach the surface extension from the blade; The end effector comprises:

2. the end effector includes a plurality of surface extensions; Further, each surface extension in the plurality of surface extensions is configured to be individually and selectively attached to and separated from the blade via the attachment mechanism. The end effector of claim 1 .

3. the surface extension is a first surface extension; the end effector includes a second surface extension; The end effector is further configured such that the attachment mechanism is capable of selectively attaching and detaching only one of the first surface extension and the second surface extension to and from the blade at a given time. The end effector of claim 1 .

4. (i) the first surface extension defines a first surface extension shape and the second surface extension defines a second surface extension shape that is different from the shape of the first surface extension; (ii) the first surface extension includes at least three first projected regions and the second surface extension includes at least three second projected regions, and the relative orientation of the at least three first projected regions is different from the relative orientation of the at least three second projected regions; The end effector of claim 3 , wherein the end effector is at least one of:

5. the blade includes an extension receiving area, and further, the surface extension extends around the extension receiving area. The end effector of claim 1 .

6. The extension-receiving area comprises: (i) Arcuate extension-receiving region (ii) an extension-receiving region that is at least partially circular; (iii) an at least partially U-shaped extension-receiving region; (iv) Polygonal extension-receiving region The end effector of claim 5 , wherein the end effector is at least one of:

7. the wafer-facing blade side is an at least substantially planar wafer-facing blade side; The end effector of claim 1 .

8. the blade defines a blade side opposite the wafer and a blade edge extending between the blade side facing the wafer and the blade side opposite the wafer; the blade side opposite the wafer is an at least substantially planar blade side opposite the wafer; Further, the blade edge defines an extension receiving area for the blade. The end effector of claim 1 .

9. The blade is defined by a blade material; the surface extension is defined by an extension material different from the blade material; The end effector of claim 1 .

10. the gas distribution manifold including a plurality of openings defined in a blade side facing the wafer; The end effector of claim 1 .

11. the blade side facing the wafer defines a blade side normal direction facing the wafer; the plurality of openings extending from a plurality of corresponding fluid conduits; each fluid conduit in the plurality of corresponding fluid conduits defines a corresponding fluid flow axis; further, the corresponding fluid flow axes of the respective fluid conduits are oriented at corresponding flow angles relative to a direction normal to the blade side facing the wafer; Further, the corresponding flow angle is at least 30 degrees and at most 80 degrees. The end effector of claim 10.

12. the plurality of openings are arranged in a plurality of concentric circles; Further, the corresponding flow angle of each fluid conduit of each opening within a given one of the plurality of concentric circles extends at least partially along a conical surface. The end effector of claim 11 .

13. the gas distribution manifold is configured to supply a pressurized gas flow to a side of the blade facing the wafer through the plurality of openings. The end effector of claim 10.

14. the gas distribution manifold is configured to cause the wafer handling end effector to selectively lift the wafer via at least one of a Bernoulli effect and a cyclonic effect. The end effector of claim 1 .

15. the wafer-facing extension side is at least substantially coplanar with the wafer-facing blade side; The end effector of claim 1 .

16. the wafer-facing extension side extends at least substantially parallel to the wafer-facing blade side; The end effector of claim 1 .

17. the at least three protruding regions are configured to make physical contact with the top surface of the wafer within an edge exclusion region of the wafer. The end effector of claim 1 .

18. When the end effector selectively lifts the wafer, the at least three protruding regions are configured to resist sliding motion relative to the wafer via static friction forces between the wafer and respective protruding ends of the at least three protruding regions. The end effector of claim 1 .

19. the at least three protruding regions are configured to protrude toward the wafer when the end effector selectively lifts the wafer; The end effector of claim 1 .

20. The attachment mechanism comprises at least one of a catch, a lever, a cam, a fastener, a keyed area, a protruding area, a recessed area, a friction fit, a resilient fit, an adhesive connection, a magnetic connection, a vacuum connection, and an electrostatic connection. The end effector of claim 1 .

21. the side of the blade facing the wafer defines an overlap area between the blade and the wafer; the side of the extension facing the wafer defines an overlap region between the extension and the wafer; the blade-to-wafer overlap region and the extension-to-wafer overlap region together define an overall wafer overlap region of the end effector, and the overall wafer overlap region is configured to face and overlap a top surface of the wafer when the end effector selectively lifts the wafer. The end effector of claim 1 .

22. the blade-to-wafer overlap region has a blade-to-wafer overlap region area that is a threshold blade overlap region percentage of the total overlap surface area in the total wafer overlap region; Further, the threshold blade overlap area percentage is at least 25% and at most 95%. The end effector of claim 21.

23. the surface extension is a first surface extension; the end effector includes a second surface extension; The end effector is further configured such that the attachment mechanism is capable of selectively attaching and detaching only one of the first surface extension and the second surface extension to and from the blade at a given time. The end effector of claim 1 .

24. the first surface extension defines a shape of the first surface extension; further, the second surface extension defines a shape of the second surface extension that is different from the shape of the first surface extension. The end effector of claim 23.

25. the first surface extension is sized to enable the end effector to selectively lift a first wafer having a first diameter; Further, the second surface extension is sized to enable the end effector to selectively lift a second wafer having a second diameter different from the first diameter. The end effector of claim 23.

26. the first surface extension includes at least three first projecting regions; the second surface extension includes at least three second projecting regions; Furthermore, the relative orientation of the at least three first projected regions is different from the relative orientation of the at least three second projected regions. The end effector of claim 23.

27. 1. A probe system configured for testing a wafer including integrated circuit devices, comprising: The probe system comprises: a chuck defining a support surface configured to support the wafer; a signal generation and signal analysis assembly configured to generate a test signal and receive a resulting signal; (i) receiving the test signal from the signal generating and signal analyzing assembly and providing the test signal to the integrated circuit device; (ii) receiving a result signal from the integrated circuit device and providing the result signal to the signal generation and signal analysis assembly; a probe assembly configured to perform at least one of: a wafer handling robot configured to position the wafer within the probe system; Equipped with The wafer handling robot includes the end effector according to any one of claims 1 to 26. Probe system.

28. the probe system includes a pressurized gas source configured to selectively supply a flow of pressurized gas to the gas distribution manifold to generate a pressure that selectively lifts the wafer; Further provided are:

28. The probe system of claim 27.

29. 1. A method utilizing a wafer handling end effector configured to selectively lift a wafer from a top surface of the wafer via pressure, comprising: separating a first surface extension from a blade of the wafer handling end effector, the first surface extension defining a first wafer-facing extension side along with a surface area of ​​the extension facing the first wafer; attaching a second surface extension to the wafer handling end effector blade, the second surface extension defining a second wafer-facing extension side with a second wafer-facing extension surface area different from the first wafer-facing extension surface area; A method comprising:

30. (i) the separating step includes elastically deforming the first surface extension; (ii) the attaching step includes elastically deforming the second surface extension; 30. The method of claim 29, comprising at least one of:

31. using an end effector to position the first wafer at a first diameter prior to the separating step; and after the attaching step, using an end effector to position a second wafer of a second diameter different from the first diameter.

31. The method of claim 30.

32. performing the separating and attaching steps while the blade is secured to a wafer handling robot.

30. The method of claim 29.

Images