Equipment for inspecting electronic semiconductor devices

Abstract

The present invention relates to an apparatus 1 for testing an electronic semiconductor component 102a formed on a substrate 101 with a test gas, the component having a sensor layer 104 for detecting gaseous substances. In this case, the apparatus 1 comprises a chamber 2 enclosing an internal space 3 that is either evacuated or pressurized, a holding device 4 for holding the substrate 101; a nozzle 8, 800 for injecting a test gas toward a sensor layer 104 of an electronic semiconductor element 102a formed on a substrate 101 held by a holding device 4; It is proposed that it is located in the inner space 3.

Description

[Technical Field]

[0001] The present invention relates to an apparatus for testing electronic semiconductor devices. Furthermore, the present invention relates to a method for testing electronic semiconductor devices. [Background technology]

[0002] The electronic semiconductor element has a sensor layer for detecting gaseous substances and can be used to detect gaseous substances. If the gaseous substance contains a specific component, an electrical signal is generated by the electronic semiconductor element. For contact of the electronic semiconductor element, the electronic semiconductor element has a contact surface for electronically contacting the electronic semiconductor element in addition to the sensor layer. The contact surface is also called a contact pad. Such electronic semiconductor elements are used as sensors for various purposes, for example, for leak detection. Such electronic semiconductor elements can be used, in particular, to analyze the chemical composition of gases. Such sensors are also called gas sensors or chemical gas sensors.

[0003] Such electronic semiconductor devices can be manufactured based on semiconductor technology. For this purpose, a thin disk, i.e., a wafer, is used as a base substrate, on which sensitive layers are formed in multiple steps, resulting in the step-by-step formation of the electronic semiconductor device. The intermediate products that are manufactured before the finished electronic semiconductor device is obtained also fall under the category of electronic semiconductor device.

[0004] The disk can be made of, for example, silicon, ceramic, or glass. In this case, the susceptor layer is applied so that multiple electronic semiconductor elements can be formed on the wafer. In many cases, these electronic semiconductor elements are small compared to the dimensions of the wafer in the planar direction. In this way, multiple electronic semiconductor elements are processed simultaneously in each of the often complex manufacturing steps for manufacturing multiple electronic semiconductor elements, so sufficient productivity can be ensured. However, each process step is tedious and therefore expensive.

[0005] Therefore, preferably, the functionality of all pre-processing intermediate products and finished electronic semiconductor devices is tested as far as possible during and after the individual process steps of the electronic semiconductor device, i.e., before costly dicing, i.e., separation, and packaging, i.e., before encapsulation, in order to enable the immediate rejection of defective electronic semiconductor devices.

[0006] To test intermediate products of the previous process and the finished electronic semiconductor components, these contact surfaces are contacted with special probes and subsequently operated by the connected electronic device. Depending on the type of electronic semiconductor component to be manufactured, it may be important or necessary for the test to be performed in a vacuum environment. Suitable examples for this exist in the prior art.

[0007] Rapid digitalization and the networking of digital components, described by keywords such as the "Internet of Things" ("IoT") and Industry 4.0, require an increasing number of sensors to be able to understand the current situation at every location and react accordingly.

[0008] EP 3486639 describes an apparatus called a prober, which shows the basic structure of a testing device and can be used to test electronic semiconductor elements, which are not, however, gas sensors.

[0009] In order to be able to test finished electronic semiconductor components and intermediate products of such components used as gas sensors on their substrates, i.e., even before separation, according to the prior art, the electronic semiconductor components and intermediate products are transported into a test environment, which is completely filled with a test gas. Since wafer movement is often necessary to individually contact each electronic semiconductor component, such a test environment requires space for mechatronic movement and contact systems. Therefore, the test equipment in which such a test environment is formed requires a large space.

[0010] If the entire test environment is filled with the test gas, i.e., the fluid to be detected, at the required composition, a large amount of test gas is required—compared to the size of the sensor layer of the electronic semiconductor device. On the other hand, which is clearly a bigger problem, the test gas will naturally reach and deposit on all surfaces present in the test environment, such as the surfaces of other components, parts, and materials. In this case, the test gas or its components can penetrate into the components, parts, or materials. This deposition, as well as the infiltration, can change the properties of the components, parts, and materials. This change in properties at least significantly reduces the performance of the test device and causes drift, i.e., a gradual change in the initial position. If corrosive gases are used as test gases, surrounding components may also be damaged. This deposition and infiltration can be addressed with dedicated test gas pump technology. However, this requires a large-scale design of the pump system and requires long suction times. However, this wastes time and energy, increases costs, and reduces the efficiency of the test, thereby reducing the manufacturing efficiency of electronic semiconductor devices. [Prior art documents] [Patent documents]

[0011] [Patent Document 1] European Patent No. 3486639 Summary of the Invention [Problem to be solved by the invention]

[0012] The object of the present invention is to overcome the drawbacks of the prior art, in particular to provide an installation for testing electronic semiconductor components which requires less test gas than the prior art. [Means for solving the problem]

[0013] This problem is solved by the features of claims 1 and 15. Advantageous configurations of the invention result from the features of the dependent claims.

[0014] According to the present invention, an apparatus for testing an electronic semiconductor component formed on a substrate with a test gas, the electronic semiconductor component having a sensor layer for detecting gaseous substances, is proposed, the apparatus comprising a chamber enclosing an internal space that is either vacuumed or pressurized. a holding device for holding the substrate; a nozzle for injecting a test gas toward a sensor layer of an electronic semiconductor element formed on a substrate held by the holding device; are placed in the interior space.

[0015] Injecting the test gas toward the sensor layer of the semiconductor component allows for the use of smaller amounts of test gas. When using the inventive arrangement, it is not necessary to fill the entire test environment, i.e., the entire interior space of the arrangement, with the test gas. Rather, it is sufficient for only the sensor layer to come into contact with the test gas. This is ensured by the present invention, in that the flow of test gas is directed toward the sensor layer of the electronic semiconductor component, which is held on a holding device. The use of the inventive arrangement significantly improves the efficiency and measurement accuracy when testing semiconductor components to be used as gas sensors. Furthermore, flexibility is improved when the chemical composition of the test gas must be changed. Deposition of the test gas on components, parts, and / or materials of the inventive arrangement is suppressed, thereby reducing drift. The test gas reaches the sensor surface and, from this surface, reaches the interior space of the chamber. The test gas can then be exhausted from the chamber via an outlet. Therefore, the contact time of the test gas with components, parts, and / or materials other than the substrate supporting the electronic semiconductor component is short. A pump, for example, can be provided to exhaust the test gas from the interior space of the chamber.

[0016] The substrate may be a wafer, for example made of silicon, ceramic, or glass. An electronic semiconductor element is formed on the substrate. The electronic semiconductor element has a sensor layer for detecting gaseous substances. In this case, a variety of electronic semiconductor elements may be formed on the substrate. The substrate has an upper surface and a lower surface. The electronic semiconductor element is formed on this surface. The electronic semiconductor element has a sensor layer. The sensor layer is spaced from the boundary of the electronic semiconductor element via a region surrounding the sensor. Furthermore, the electronic semiconductor element has a plurality of contact surfaces for connection by contact elements. Preferably, the contact surfaces are formed spaced from the boundary of the electronic semiconductor element and the sensor layer. Preferably, the contact surfaces are located outside the surrounding region. The contact surfaces may be arranged around the sensor layer.

[0017] During use of the equipment of the present invention for testing electronic semiconductor devices, the internal space is either depressurized or pressurized. The pressure in the internal space during testing is different from atmospheric pressure. This pressure is also called chamber pressure. Preferably, the internal space is depressurized. For example, the internal space is 10 -5 The test gas can be reduced to a pressure of 0.1 mbar or less. Under the chamber pressure, the test gas is a gas. One or more devices for delivering the test gas to the nozzle can be provided. The test gas can be delivered to the sensor layer of the held semiconductor element at a pressure called the test pressure. Preferably, the test pressure is higher than the chamber pressure. The test pressure can be controlled independently of the chamber pressure.

[0018] The test gas can be generated in the nozzle itself. For this purpose, it can be proposed that the components of the test gas to be generated are fed separately to the nozzle. For example, the test gas can be generated in the nozzle from a first gas and a second gas. Each of the two gases can be fed to the nozzle by one or more devices for feeding gases.

[0019] The test gas may be a mixture of gases. The test gas may include a gaseous substance, but this is not a requirement. The gaseous substance is the substance that must be detected by the sensor layer.

[0020] Preferably, the nozzle has a first nozzle opening. The test gas flows out of the nozzle through the first nozzle opening. It may be proposed that the nozzle is configured for injecting a shielding gas or for aspirating a test gas. To this end, the nozzle may have a second nozzle opening in addition to the first nozzle opening. The shielding gas may flow out of the nozzle through the second nozzle opening, or the test gas may flow into the nozzle after contacting the sensor layer. In this case, the second nozzle opening may be formed coaxially with the first nozzle opening. In this case, the second nozzle opening may be formed around the first nozzle opening. In this case, the second nozzle opening may be separated from the first nozzle opening by a nozzle bridge. The nozzle may have another nozzle opening, for example a third nozzle opening. Similarly, the other nozzle opening may be formed coaxially with the first and second nozzle openings. Each of these openings may be used for injecting another gas or for aspirating a gas or gas mixture. Preferably, the nozzle has a nozzle body. The first nozzle opening is formed in the nozzle body. The first nozzle opening may also be formed in the nozzle body. In one embodiment, the nozzle body has at least one connection. A test gas may be fed to the nozzle through the connection. The gas may be fed to the nozzle by a device for feeding gas at the connection. The nozzle may have only one connection. The test gas is fed to the nozzle through this connection. Alternatively, it may be proposed that the nozzle body has exactly two connections. In this case, the first connection may be used to feed the test gas, and the second connection may not be used. If the test gas in the nozzle must be generated from a first gas and a second gas, the first connection may be used to feed the first gas, and the second connection may be used to feed the second gas. The nozzle body may have another connection. A shielding gas may be fed to the nozzle through another connection.

[0021] The shielding gas may be delivered to the held semiconductor device at a pressure referred to as the shielding gas pressure. Preferably, the shielding gas pressure is higher than the chamber pressure. The shielding gas pressure may be controlled independently of the chamber pressure. The physical state of the shielding gas may differ from the physical state of the test gas, for example, related to at least one of the following characteristics: gas composition, pressure, temperature, humidity, flow rate, and volumetric flow rate.

[0022] The nozzle body may be symmetrical with respect to its outer shape. However, the nozzle body may also be symmetrical overall, i.e., not only with respect to its outer shape. In this case, the axis of symmetry may be the longitudinal axis of the nozzle body. A symmetric nozzle body may have two connections. One of these connections may be used to supply the test gas or, if the test gas must be generated from the first gas and the second gas within the nozzle, may be used to supply the first gas. If the test gas is supplied via the first connection, the second connection may not be used. If the test gas must be generated from the first gas and the second gas within the nozzle, the second connection may be used to supply the second gas. An insert may be formed in the nozzle body to enable mixing of the first gas and the second gas to form the test gas. This nozzle insert may have one or more components for delivering the first gas and / or the second gas.

[0023] The material forming the nozzle body can be selected from a variety of materials, depending on the material, the nozzle can be adapted to different test conditions, for example different test gases, test pressures and / or chamber pressures.

[0024] According to the present invention, a holding device is provided for holding the substrate. Preferably, the holding device is configured so that the lower surface of the substrate abuts on the holding device. For this purpose, the holding device can have a holding surface. The upper surface of the substrate having the electronic semiconductor element does not face the holding surface and is therefore exposed. Therefore, the sensor layer of the electronic semiconductor element is also exposed. When the electronic semiconductor element is arranged on a substrate and this substrate is held by the holding device, the electronic semiconductor element is also called a held semiconductor element.

[0025] The proposed nozzle of the present invention is used to inject a test gas toward a sensor layer of an electronic semiconductor component. To enable directed injection of the first test gas, the nozzle is preferably positioned facing the holding device and spaced apart from the holding device. In this case, the distance between the nozzle and the holding device is preferably configured such that a gap is formed between the nozzle and the holding device when the holding device holds the substrate. In other words, this means that the nozzle preferably does not contact either the held semiconductor component or the substrate. However, in one embodiment, it may be proposed that the nozzle contact the held semiconductor component or the substrate, although this is not beneficial. Undesired contact between the nozzle on the one hand and the held semiconductor component or the held substrate on the other hand could damage the held substrate and / or the held semiconductor component, or the held substrate and / or the held semiconductor component could be contaminated by material components of the nozzle. Therefore, in many cases, contact between the nozzle and the held semiconductor component or the held substrate must be absolutely avoided.

[0026] It can be provided that when the holding device holds a substrate, the first nozzle opening is arranged facing the held semiconductor element, and when the holding device holds a substrate and the nozzle has a second nozzle opening, it can be provided that the first nozzle opening and the second nozzle opening are arranged facing the held semiconductor element.

[0027] Preferably, the nozzle body has a first front surface facing the holding device. A first nozzle opening is formed in the first front surface. If the nozzle has a second nozzle opening, the second nozzle opening is also preferably formed in the first front surface of the nozzle body. The vertical distance between the first front surface of the nozzle body and the sensor layer of the held semiconductor element should be as small as possible. Preferably, the vertical distance between the first front surface of the nozzle body and the sensor layer of the held semiconductor element is greater than 0 and less than 0.1 mm.

[0028] The nozzle body may have a second front surface opposite the first front surface. A flow path may extend between the first and second front surfaces. An inspection gas is delivered to the first nozzle opening through this flow path. A window may be formed in the second front surface. This window allows observation of the held semiconductor element. For this observation, an optical device, for example, a microscope, may be provided. The optical device may be located outside the chamber. The window may be located in the center of the second front surface. Through the window, the continuous flow path, and the first nozzle opening, the positioning of the held semiconductor element may be observed. In particular, the positioning of the contact device and / or the held semiconductor element below the nozzle may be observed. This observation is possible from above.

[0029] It may be proposed that the first nozzle opening is aligned with the sensor layer of the held semiconductor component. In this case, the term "aligned" means that there is an axis G perpendicular to the first nozzle opening and the surface of the sensor layer facing the first nozzle opening. Preferably, the axis G is perpendicular to the holding surface of the holding device. In this case, the first nozzle opening is aligned with the holding surface. Preferably, the shape of the nozzle opening is adapted to the shape of the electronic semiconductor component and / or the shape of the sensor layer of the electronic semiconductor component. It may be proposed that the first nozzle opening is rectangular. This is advantageous because many electronic semiconductor components are rectangular for reasons of efficient space utilization. Furthermore, the dimensions of the first nozzle opening, i.e., the dimensions in a plane parallel to the surface of the sensor layer, may also be adapted to the dimensions of the electronic semiconductor component and / or the sensor layer of the electronic semiconductor component. In this regard, the term "adapted" means that the test gas flow is directed only toward the held semiconductor component or only toward the sensor layer of the semiconductor component and the area surrounding the sensor layer.

[0030] It may be proposed that the second nozzle opening is formed facing the peripheral region of the held semiconductor element. Thus, a shielding gas can be delivered to the held semiconductor element. Preferably, the shielding gas is an inert gas, such as argon or nitrogen. The shielding gas must not contain any gaseous substances detected by the sensor layer. The shielding gas can perform a shielding function to prevent the infiltration of ambient gas. For this purpose, it is advantageous that the test gas flows out of the gap between the first nozzle connection and the held semiconductor element under a test pressure, both pressures being higher than the chamber pressure. Thus, the sensor layer, to which the test gas is directed, is isolated from the ambient gas.

[0031] The semiconductor element may have a contact surface that is spaced apart from the sensor layer via a spacing surface formed thereon, in which case the second nozzle opening faces the spacing surface.

[0032] Preferably, the nozzle has a nozzle wall, the thickness of the material of which decreases in the direction of the retaining device.

[0033] The nozzle may have a nozzle body. A first flow path is formed in the nozzle body. A test gas flows through the first flow path to the first nozzle opening. Preferably, the nozzle body is airtight to allow the test gas to be delivered without leakage. A second flow path may be formed in the nozzle body. A shielding gas flows through the second flow path to the second nozzle opening, or test gas drawn in through the second nozzle opening is discharged through the second flow path. A nozzle bridge may be formed in the nozzle body. The nozzle bridge separates the first flow path from the second flow path.

[0034] Returning the test gas through the second nozzle opening has various advantages. Returning the test gas allows for a detailed analysis of the test gas flowing past the held semiconductor element. For this purpose, the inventive system can include a gas analyzer. To draw the test gas, the gas analyzer can be arranged in a pipe connected to the nozzle. Furthermore, returning the test gas through the second nozzle opening also serves a shielding function, preventing ambient gas from seeping in from the interior space of the chamber. In addition to the test gas, ambient gas is also drawn through the second nozzle opening. By drawing the test gas and ambient gas together, the pressure of the test gas flowing through the gap between the nozzle and the held semiconductor element, which is slightly higher than the chamber pressure, is reduced. Therefore, returning the test gas through the second nozzle opening shields the sensor layer from the ambient gas. In this case, the ambient gas is the gas present in the interior space of the chamber, excluding the test gas and, if applicable, the shielding gas, as long as the test gas and the shielding gas do not flow out of the gap between the front face of the nozzle and the held semiconductor element.

[0035] The inventive device may have a mechanism for indicating and / or measuring the distance between the held semiconductor element, e.g., the sensor layer, and the nozzle. In particular, the inventive device may have a mechanism for indicating and / or measuring the distance between the held semiconductor element, e.g., the sensor layer, and the first front surface of the nozzle. The mechanism may be a height gauge or measuring device attached to the nozzle. The measuring mechanism may be, for example, a test needle. For example, it may be proposed that the movement of the nozzle toward the held semiconductor element is terminated when the test needle contacts the contact surface of the held semiconductor element. The structure of the test needle may correspond to the structure of the contact needle of a contact device. However, the measuring mechanism may also be, for example, a capacitive, inductive, or other sensor suitable for the above-mentioned task in the prior art.

[0036] Furthermore, the equipment of the present invention may have a positioning device for positioning the nozzle. Using the positioning device, the nozzle can be held and moved. Using the positioning device, the nozzle can be positioned facing the sensor layer of the held semiconductor element. Using this positioning device, the nozzle can be moved in the x, y, and z directions and rotated around an axis on the z coordinate. In this case, height positioning of the nozzle, i.e., positioning with respect to the z coordinate, is very important. Alternatively or additionally, the equipment of the present invention may have a positioning device for positioning the holding device. Using this positioning device, the holding device can be moved in the x, y, and z directions and rotated around an axis on the z coordinate. The positioning device may be a manipulator. If a positioning device for the nozzle is not provided, the nozzle can instead be held by a contact device, as described below.

[0037] The apparatus of the present invention may have a contact device for making electrical contact with the contact surfaces of the held semiconductor element. This contact device may be a so-called probe card. The contact device may have an opening through which the nozzle passes. Alternatively, the nozzle may be fixedly coupled to the contact device.

[0038] The contact device has contact needles, which contact the contact surfaces of the held semiconductor element. Therefore, it is advantageous for the front surface of the nozzle body facing the held semiconductor element to be as thin as possible. For this purpose, it is recommended that the nozzle body tapers toward its first front surface, thereby reducing its material thickness. This ensures that the contact needles of the contact device have sufficient space to move without contacting them, while simultaneously allowing for their alignment. Increasing the material thickness of the nozzle body from its first front surface toward its opposing second front surface is advantageous for achieving nozzle stabilization and for enabling—at a sufficient distance from the first front surface—the attachment of suitable, preferably standardized, fixing elements to the nozzle support structure.

[0039] The nozzle can be fixedly coupled to the contact device, for example via one or more connecting elements. In this case, the nozzle is preferably in a coordinated position relative to the contact device. In this way, collisions between the nozzle and the contact needle can be eliminated. It is not necessary to align the nozzle with a positioning device. Nor is a separate device for holding the nozzle necessary. However, the production of the contact device is costly.

[0040] The nozzle has one or more connections. The test gas, components of the test gas, or shielding gas can be fed into the nozzle separately via the connections. One line each can be provided for feeding the test gas, components of the test gas, and shielding gas to the connections. Preferably, the connection between the connection and the line is sealed by a sealing mechanism suitable for use under reduced pressure and / or increased pressure, for example.

[0041] The equipment of the present invention may have one or more mechanisms for adjusting the pressure of the chamber. In particular, the equipment of the present invention may have one or more mechanisms for reducing or increasing the pressure in the chamber. The mechanism for reducing the pressure may be a pump. The pump may be located outside the chamber. An opening used as an outlet may be provided in the chamber wall. Gas present in the internal space of the chamber may be discharged from this opening through a pipe by the pump.

[0042] The apparatus of the present invention may include one or more mechanisms for delivering the test gas, the first gas, and / or the second gas to the nozzle. For example, the test gas may be delivered to the nozzle via one or more lines by a pump. The apparatus of the present invention may include one or more mechanisms for delivering the shield gas to the nozzle. For example, the shield gas may be delivered to the nozzle via one or more lines by a pump.

[0043] The apparatus of the present invention may also include one or more mechanisms for discharging the test gas from the nozzle. For example, the test gas may be discharged from the nozzle through one or more pipes by a pump. Such a pump may be a suction pump.

[0044] The inventive system allows for the proper delivery of test gas and, optionally, shielding gas. The required gas volumes are very small. This allows for very fast changes in process parameters, such as test gas flow rate, chamber pressure, test pressure, test gas component concentration, and shielding gas flow rate. This list is merely illustrative. The inventive system allows for fast testing of a large number of electronic semiconductor devices under different test conditions.

[0045] The first nozzle opening is configured so that the flow of test gas flowing out of the first nozzle opening is directed only at one of the electronic semiconductor devices, i.e., the electronic semiconductor device to be tested. Electronic semiconductor devices adjacent to the electronic semiconductor device to be tested on the substrate are not or only minimally exposed to the test gas. This is a significant advantage for many applications compared to conventional techniques in which all electronic semiconductor devices formed on the substrate are exposed to the test gas throughout the entire period in the chamber.

[0046] The mechanism for adjusting the chamber pressure can ensure that the concentration of the test gas in the internal space of the chamber does not increase or decrease beyond a predetermined range. The mechanism for adjusting the chamber pressure can suck in the test gas that has flowed out of the first nozzle opening of the nozzle and contacted the held semiconductor element. Preferably, the mechanism for adjusting the chamber pressure is a pump. The test gas that flows out of the nozzle is immediately discharged by the pump after contacting the sensor layer of the held semiconductor element. Therefore, the overall test gas concentration in the chamber does not change. As a result, contamination and damage to mechanisms present in the chamber, such as mechatronic systems such as positioning devices, are avoided. This is a significant advantage.

[0047] Using the inventive arrangement, comparative measurements and calibrations can be easily performed using measuring devices known from the prior art. If the chamber is under reduced pressure, the measuring device can be a vacuum measuring device. For example, a residual gas analyzer ("RGA") can be attached to the chamber. Measurements can be performed under different pressures. In this case, the specific pressure is called a pressure level. Different pressures can be easily adjusted using the inventive arrangement. For this purpose, the inventive arrangement has an inlet. This inlet allows gas to be supplied to the chamber wall through an opening. The gas can be, for example, an ambient gas, such as ambient air, or a protective gas such as nitrogen or argon. The inlet can have one or more control devices, for example, a valve.

[0048] Furthermore, according to the present invention, a method is proposed for testing an electronic semiconductor component formed on a substrate, the component having a sensor layer for detecting gaseous substances, with a test gas using an apparatus having a chamber enclosing an internal space that is either depressurized or pressurized.

[0049] The equipment in question is: - positioning a nozzle relative to a sensor layer of an electronic semiconductor component to enable injection of a test gas towards the sensor layer; contacting a contact surface of the semiconductor element by a contact device; outputting a test signal by a contact device to a contact surface of the electronic semiconductor element while the test gas is injected by a nozzle onto the sensor layer.

[0050] The method of the present invention can be performed by the equipment of the present invention. Furthermore, the method of the present invention can include receiving a signal from the semiconductor component. This signal can be received by a connection device via a contact surface of the semiconductor component. The received signal can then be compared with a comparison value to determine whether the semiconductor component is defective.

[0051] Details of the method of the present invention have already been described in connection with the installation of the present invention, and reference is made to said description.

[0052] The invention will now be described in more detail with reference to the drawings, based on non-limiting embodiments. [Brief explanation of the drawings]

[0053] [Figure 1] 1 is a schematic plan view of a substrate on which a plurality of electronic semiconductor elements are formed; [Figure 2] FIG. 2 is a schematic plan view of the electronic semiconductor device shown in FIG. [Figure 3] 1 is a schematic configuration diagram of a first embodiment of the facility of the present invention. [Figure 4] FIG. 2 is a schematic plan view of a holding device holding a substrate. [Figure 5] FIG. 2 is a schematic plan view of a held semiconductor element. [Figure 6] 1 is a schematic view of a first nozzle of a first embodiment of the installation of the invention with a substrate held by a holding device, in this case the holding device is not shown; [Figure 6A] 3 is a schematic plan view of the nozzle as viewed from a first front face of the nozzle body. FIG. [Figure 6B] FIG. 2 is a schematic diagram of a portion of a nozzle. [Figure 6C] 1 is a schematic view of a first nozzle of a first embodiment of the apparatus of the invention with a substrate held by a holding device, the holding device not being shown in this case, in which two gases are supplied to the nozzle; [Figure 7] FIG. 1 is a detailed view of a first embodiment of the equipment of the present invention. [Figure 8] FIG. 4 is a schematic diagram showing the dimensions of a first nozzle opening. [Figure 9] 1 is a schematic diagram of a second nozzle with a substrate held by a holding device, in this case the holding device is not shown; [Figure 9A] FIG. 4 is a schematic plan view of the second nozzle as viewed from the first front surface of the nozzle body. [Figure 9B] FIG. 4 is a schematic diagram showing the dimensions of a first nozzle opening and the dimensions of a second nozzle opening. [Figure 10] FIG. 10 is a diagram of a second nozzle opening with a second nozzle used to supply a shielding gas. [Figure 11] 1 is a diagram of a second nozzle, in which the second nozzle opening is used to draw in the test gas. [Figure 12] FIG. 2 is a schematic diagram of a second embodiment of the installation of the present invention. [Figure 13A] 1 is a schematic diagram of a mechanism for measuring the distance between a nozzle and a held semiconductor element, in this case showing the mechanism before contact with the held semiconductor element. [Figure 13B]13B is a schematic diagram of the mechanism shown in FIG. 13A for measuring the distance between the nozzle and the held semiconductor element, in this case showing the mechanism when the held semiconductor element is in contact with the mechanism. DETAILED DESCRIPTION OF THE INVENTION

[0054] The x, y, and z coordinates shown in the figures represent a Cartesian coordinate system. An exemplary substrate 101 is shown in FIG. 1. A plurality of electronic semiconductor devices 102, 102a are formed on an upper surface 101a of the substrate 101a. The electronic semiconductor devices 102, 102a are separated from one another by a boundary 103. Generally, the semiconductor devices 102, 102a have the same structure, but this is not required. The electronic semiconductor devices 102, 102a form a rectangle defined by the boundary 103.

[0055] FIG. 2 shows an exemplary electronic semiconductor device 102a disposed on a substrate 101. The semiconductor device 102a includes a sensor layer 104 for detecting a gaseous substance and a contact surface 105 for electrical contact. The sensor layer 104 is spaced apart from the boundary 103 and the contact surface 105 of the semiconductor device 102a. A spacing surface 106 exists between the sensor layer 104 and the boundary 103. The contact surface 105 is also spaced apart from the boundary. In this case, a spacing surface 106a, which is a part of the spacing surface 106, is formed between the contact surface 105 and the sensor layer 104. Thus, a peripheral region 107 is adjacent to the sensor layer 104. The peripheral region 107 is surrounded by the boundary 103 and the contact surface 105 of the semiconductor device 102a and is part of the spacing surface 106. In FIG. 2, the peripheral region 107 is indicated by diagonal lines. The sensor layer 104 has a rectangular shape.

[0056] The first embodiment of the inventive apparatus 1 shown in Figure 3 comprises a chamber 2 enclosing an internal space 3. The chamber 2 comprises chamber inner walls, i.e., a bottom portion 2u, a wall portion 2s, and a top portion 2o. The wall portion 2s is fixedly connected to the bottom portion 2u. The top portion 2o is formed as a removable lid and can be removably fixed to the wall portion 2s. The contact surface between the wall portion 2s and the top portion is sealed by one or more sealing elements.

[0057] The internal space 3 can be depressurized or pressurized. A holding device 4 for holding a substrate 101 is arranged in the internal space 3. The holding device 4 is also called a chuck. The holding device 4 has a holding surface 40. A lower surface 101b of the substrate 101 abuts against the holding surface 40 (see FIGS. 4 and 6). In this case, the illustrated semiconductor element 102a abuts against the holding surface 40 at a known position. In this case, a first substrate portion of the substrate 101 abuts against a first holding area 41 of the holding surface 40. A sensor layer 104 of the semiconductor element 102a is formed on the first substrate portion. A second substrate portion abuts against a second holding area 42 of the holding surface 40. A spacing surface 106 is formed on the second substrate portion. FIG. 5 shows a portion of the holding surface 40. The semiconductor element 102a is held by this portion. In this case, the first holding area 41 and the second holding area 42 are indicated by dashed lines. The diagonally shaded third holding area 43 surrounding the first holding area 41 is the area where the third substrate portion of the substrate 101 corresponds to the holding surface 40. This third substrate portion includes a peripheral area 107 of the semiconductor element 102a. The holding device 4 is disposed on a positioning device 5 called a stage. The holding device 4 can be moved in the x-, y-, and z-axis directions by the positioning device 5 and can rotate around a rotation axis located on the z-axis. The holding surface 40 of the holding device 4 can be positioned by the positioning device 5 so that the vertical axis of the first holding area lies on axis G. The held semiconductor element is also positioned by the holding surface so that the vertical axis of the held semiconductor element lies on axis G. In this case, the term vertical axis refers to the z coordinate.

[0058] Furthermore, a contacting device 6 is arranged in the interior space 3 for electrically contacting the semiconductor element at a contact surface 105. This contacting device may be a probe card. The contacting device 6 is supported by a support 7. The contacting device 6 has contact needles 61 (see FIG. 7). The contacting device 6 faces the holding surface 40 of the holding device 4. When the substrate 101 is held by the holding device 4, the contact needles 61 can be aligned with the contact surface 105 of the semiconductor element 102 so that the contact needles 61 are in electrical contact with the contact surface 105. The contacting device 6 has openings 62 (see FIG. 7). The openings 62 allow observation of the semiconductor element 102 by an optical device 9 arranged outside the camera 2—for example, according to the prior art as described in FIG. 5 of EP 3486639. Power is supplied to the contacting device 6 via an electric cable 64. Furthermore, signals can be transmitted to or received by the contacting device 6 via the cable 64. An electrical cable 64 can be laid into the interior space 3 of the chamber through a sealed penetration 63 in the wall 2s.

[0059] Furthermore, a nozzle 8 is arranged in the internal space 3. The nozzle 8 has a nozzle body 81 and a surrounding nozzle wall portion 82 (see FIGS. 6 and 6A). The nozzle wall portion 82 includes a flow path 83. An inspection gas is delivered to a first front surface 81a of the nozzle body 81 through the flow path 83. A first nozzle opening 84 is formed in the first front surface 81a. The inspection gas can be discharged from the flow path 83, i.e., the nozzle body 81, through the first nozzle opening 84 (arrow B). It can be seen in FIG. 6 that the nozzle body 81 tapers toward its first front surface 81a. It can also be seen that the material thickness of the nozzle wall portion 82 decreases toward the first front surface 81a. Thus, the nozzle body 81 has a tapered shape. A window 85 is formed in a second front surface 81b of the nozzle body 81 opposite the first front surface 81a. The window 85 allows the held semiconductor inspection device 102a to be observed by an optical device 9. The flow passage 83 extends from the second front surface 81b to the first front surface 81a of the nozzle body 81. The nozzle body 81 of the nozzle 8 is symmetrical about a vertically extending axis G (see FIGS. 6 and 6A). In this case, the longitudinal axis of the flow passage 83, the longitudinal axis of the first front surface 81a, the longitudinal axis of the first nozzle opening 84, and the longitudinal axis of the second front surface 81b lie on the axis G. In this case, the term vertical axis refers to the z coordinate.

[0060] Furthermore, the nozzle 8 has a first supply channel 86 for delivering gas to the channel 83 of the nozzle body 81 (see FIGS. 6 and 6C). In the first variation shown in FIG. 6, the test gas is delivered through the first supply channel. In the second variation shown in FIG. 6C, the first gas is delivered through the first supply channel 86. In the illustrated embodiment of the inventive device 1, the nozzle 8 also has a second supply channel 87. In this second variation, the second supply channel 87 can be used to deliver a second gas to the channel 83 of the nozzle body 81, or, as in the first variation, is not used if no second gas is delivered. The first supply channel 86 terminates in the region of the nozzle wall 82 that abuts the second front face 81b of the nozzle body 81. Similarly, the second supply channel 87 terminates in the region of the nozzle wall 82 that abuts the second front face 81b of the nozzle body 81. In the second variation, the first gas and the second gas are mixed with the test gas in the flow path 83. In FIG. 6C, the first gas is labeled "Gas 1" and the second gas is labeled "Gas 2." The test gas or the first gas is delivered to the nozzle 8 via a connection 11 sealed by a sealing member 12 and a pipe 205 connected to the first supply flow path 86 via the connection 11. In the second variation, the second gas is delivered to the nozzle 8 via a connection 14 sealed by a sealing member 15 and a pipe 16 connected to the second supply flow path 87 via the connection 14. However, as in the first variation, the second gas does not have to be delivered. In this case, the second supply flow path 87 is closed at the connection 14 as shown in connection with the first variation.

[0061] The two supply channels are formed in a circumferential flange 88. The flange 88 has an outer surface 88a, which faces the holding surface 40 of the holding device 4. In a first embodiment of the inventive installation 1, the nozzle 8 is supported by the outer surface 88a on the contact device via a connecting element 10 (FIG. 7).

[0062] The nozzle body 81 extends through the opening 62 of the contact device. In this case, the first front surface 81a of the nozzle body 81 and, together with this first front surface 81a, the first nozzle opening 84 are arranged opposite the holding surface 40 of the holding device 4. In this case, a distance D is formed between the first front surface 81a of the nozzle body 81 and the holding device 4. This distance is selected so that the nozzle does not come into contact with the holding device 4 and the semiconductor element 102 when the substrate 101 is held by the holding device 4. A distance C between the front surface 81a of the nozzle body 81 and the sensor layer 104 of the held semiconductor element 102a is smaller than the distance D. The distance C is in the range from 0 to 0.1 mm. In this case, the distance D corresponds to the sum of the distance C and the thickness of the held semiconductor element 102a. The distances C, D, and the thickness of the held semiconductor element 102a each correspond to a z-coordinate. This z-coordinate corresponds to the vertical direction.

[0063] The nozzle 8 is spaced apart from the holding surface 40 and, when the holding surface 40 holds the substrate 101, is spaced apart from the held semiconductor element 102a. A gap 17 is therefore formed between the first front surface 81a of the nozzle body 81 and the semiconductor element 102a. The test gas can flow out of the sensor layer 104 through the gap 17 (arrow H). The gap 17 forms an outflow area. The size of the gap 17 is determined by the distance C and should be as small as possible.

[0064] The first nozzle opening 84 faces the sensor layer 104 of the held semiconductor element 102a and is spaced apart from this sensor layer 104. In this case, the dimensions F1, F2 of the first nozzle opening in a plane parallel to the sensor layer 104 may correspond to the dimensions E1, E2 of the sensor layer 104 or may be larger than the dimensions E1, E2 of the sensor layer 104 (see FIG. 8 ). In this case, the dimensions of the first nozzle opening 84 are designed so that, on the one hand, the test gas flowing out through the nozzle opening 84 reaches only the sensor layer 104 or only the sensor layer 104 and the surrounding area 107, and, on the other hand, the flowing out test gas completely covers the sensor layer 104. In FIG. 8 , it can be seen that the shape of the first nozzle opening 84 corresponds to the shape of the sensor layer 104.

[0065] FIG. 8 shows the held semiconductor element 102a and the first front surface 81a of the nozzle. In this case, the nozzle wall portion 82 starting from the first front surface 81a is indicated by diagonal lines. It can be seen that the dimensions F1 and F2 of the first nozzle opening 84 are larger than the dimensions E1 and E2 of the sensor layer 104. However, the dimensions F1 and F2 of the first nozzle opening are smaller than the dimensions of the held semiconductor element 102a. The dimensions F1 and F2 of the first nozzle opening 84 correspond to the dimensions of the peripheral region 107 plus the dimensions E1 and E2 of the sensor layer 104. Therefore, the nozzle opening does not extend across the contact surface 105. In this case, the dimensions E1 and F1 correspond to the x-coordinate, and the dimensions E2 and F2 correspond to the y-coordinate.

[0066] When the substrate is not held by the holding device 4 , the first nozzle opening 84 faces the first holding region 41 of the holding surface 40 .

[0067] A sealed opening is formed in the chamber 2, which allows for the adjustment of the vacuum or pressure in the interior space 3. In a first embodiment of the installation 1 of the invention, a device for adjusting the vacuum is provided.

[0068] The equipment 1 of the present invention has an inlet 18. Ambient gas can be sent to the internal space 3 of the chamber 2 through the inlet 18. The ambient gas can be an inert gas. The inlet 18 has a throttle valve 181 and a block valve 182. These two valves are arranged outside the chamber 2. A sealed opening 183 is formed in the chamber wall. The ambient gas can reach the internal space 3 from the inlet 18 through the opening 183 (arrow ZL). The inlet 18 has one pipe or a series of multiple pipes. The opening 183 is formed in the bottom surface 2u of the chamber 2.

[0069] Furthermore, the equipment 1 of the present invention has an outlet 19, by which the reduced pressure in the internal space 3 can be adjusted and maintained. The outlet has a pump 191 and a control valve 192. The pump 191 and the control valve 192 are arranged outside the chamber 2. A sealed opening 193 is formed in the wall of the chamber. Gas can be discharged from the internal space 3 through the opening 193 to the outlet 19 by the pump 191 (arrow AL). The outlet 19 has one pipe or a series of multiple pipes. The opening 193 is formed in the bottom surface 2u of the chamber 2.

[0070] Furthermore, the equipment 1 of the present invention includes a supply device 20 for the test gas. The supply device 20 includes one pipe or a series of pipes. The supply device 20 includes a throttle valve 201 and a block valve 202. These valves are arranged outside the chamber 2. A sealed penetration 203 is formed in the chamber wall for the piping of the supply device 20. A first gas ("gas 1") is fed to the first supply passage 86 via the piping of the supply device 20. The penetration 203 is formed in the wall 2s of the chamber 2.

[0071] If a second gas (Gas 2) is supplied to the nozzle, the installation 1 of the invention has a second supply device, the structure of which can correspond to the supply device 20 for Gas 1, except that Gas 2 is sent to the second supply device 87. The pipe 16 is part of the second supply device.

[0072] The inventive installation 1 may comprise a measuring device 21. In the illustrated first embodiment of the inventive installation 1, the measuring device 21 is arranged in the interior space 3 of the chamber 2. However, the measuring device 21 may also be arranged outside the chamber 2. The measuring device 21 may be used to measure process parameters. For example, the measuring device 21 may be used to measure the concentration of a test gas or a composition of a test gas, or the pressure in the interior space 3, or the flow rate and / or volumetric flow rate of the test gas, or a composition of the test gas. The measuring device 21 may also be integrated into the supply device 20 as shown in FIG. 3.

[0073] A door 22 that can be used as an entrance door is formed in the wall portion 2s. The contact surface between the wall portion 2s on which the door 22 is formed and the door 22 is sealed by one or more sealing elements. This door allows access to the interior space 3. A window 23 is formed in one or more wall portions 2s. In this case, the contact surface between the wall portion 2s on which the window 23 is formed and the window 23 is sealed by one or more sealing elements. In the first embodiment of the inventive installation 1 shown in Figure 3, only one window 23 is provided. The window 23 allows observation of the interior space 3, of the devices present in the interior space 3, and of the substrate 101 carrying the semiconductor element 102.

[0074] The lid of the chamber 2 is formed with a central opening 24 that is sealed by an insert 25. In this case, the interface between the insert 25 and the lid is sealed by one or more sealing elements. The insert has a sealed window 26 through which the semiconductor component 102 can be observed by the optical device 9.

[0075] 9-11 show the second nozzle 800. The arrangement and orientation of the second nozzle 800 within the interior space 3 corresponds to the arrangement of the nozzle 8. The structure of the second nozzle 800 corresponds to the structure of the nozzle 8, except for the second nozzle opening 889 and the associated modifications of the nozzle 800 relative to the nozzle 8. The second nozzle opening 889 and the associated modifications are described below.

[0076] The nozzle 800 has a nozzle body 881 and a surrounding nozzle wall portion 882 (see FIG. 9). The nozzle wall portion 882 encloses a first flow path 883 and a second flow path 8831. An inspection gas is delivered to a first front surface 881a of the nozzle body 881 through the first flow path 883. A shielding gas is delivered to the first front surface 881a of the nozzle body 881 through the second flow path 8831 (see FIG. 10), or an inspection gas is discharged from the first front surface 881a through the second flow path 8831 (see FIG. 11). A first nozzle opening 884 is formed in the first front surface 881a. The inspection gas can flow out of the first flow path 883, i.e., from the nozzle body 881, through the first nozzle opening 884 (arrow B). Furthermore, a second nozzle opening 889 is formed in the first front surface 881a. Shielding gas can be flowed out of second flow path 8831, i.e., out of nozzle body 881, through second nozzle opening 889 (FIG. 10), or test gas can also be flowed into nozzle body, i.e., into flow path 8832, through second nozzle opening 889 (FIG. 11). First nozzle opening 884 and second nozzle opening 889 are separated from each other by nozzle bridge 890. Nozzle bridge 890 also separates first flow path 883 from second flow path 8831.

[0077] As in the case of the nozzle 8, the nozzle body 881 of the second nozzle 800 tapers toward its first front surface 881a. The thickness of the material of the nozzle wall portion 882 also tapers toward the first front surface 881a. Thus, the nozzle body 881 similarly has a tapered shape. A window 885 is formed in a second front surface 881b of the nozzle body 881, which faces the first front surface 881a. The window 885 allows the held semiconductor element 102a to be observed by the optical device 9. The first flow path 883 extends from the second front surface 881b of the nozzle body 881 to the first front surface 881a. The nozzle body 881 of the nozzle 800 is a nozzle body symmetrical in its outer shape with respect to an axis G that extends vertically (see FIG. 9 ). In this case, the longitudinal axis of the first flow channel 883, the longitudinal axis of the first front surface 881a, the longitudinal axis of the first nozzle opening 884, the longitudinal axis of the second nozzle opening 889, and the longitudinal axis of the second front surface 881b lie on axis G. In this case, the term vertical axis refers to the z coordinate.

[0078] The second nozzle opening 889 is spaced apart from and surrounds the first nozzle opening via a nozzle bridge 890 (see FIG. 9A ). The second nozzle opening 889 is formed coaxially with the first nozzle opening. The edge of the second nozzle opening 889 facing the first nozzle opening 884 is the inner edge 889i of the second nozzle opening. The edge of the second nozzle opening 889 facing the first nozzle opening 884 is the outer edge 889a of the second nozzle opening. The shape of the inner edge 889i matches the shape of the edge of the first nozzle opening, but the dimensions of the inner edge 889i along the x and y coordinates are larger. This forms the nozzle bridge 890. The shape of the outer edge 889a matches the shape of the inner edge 889i of the second nozzle opening, but the dimensions of the outer edge 889a along the x and y coordinates are larger than the dimensions of the inner edge 889i.

[0079] Like nozzle 8, second nozzle 800 has a first supply passage 889 for delivering process gas to first passage 883 of nozzle body 881. Additionally, nozzle 800 has a second supply or exhaust passage 887. In a first variation, second supply or exhaust passage 887 can be used to deliver second gas from second passage 8831 of nozzle body 881 (in which case second supply or exhaust passage 887 is an exhaust passage). Alternatively, in a second variation, second supply or exhaust passage 887 can be used to deliver test gas to second passage 8831 of nozzle body 881 (in which case second supply or exhaust passage 887 is a supply passage). First supply passage 886 terminates at a region of nozzle wall portion 882 that abuts second front surface 881b of nozzle body 881. Similarly, the second supply or discharge flow path 887 terminates in the region of the nozzle wall portion 882 that abuts the second front surface 881b of the nozzle body 881. In the first variation (FIG. 10) and the second variation (FIG. 11), the test gas is fed to the nozzle 800 via a connection 11 sealed by a sealing portion 12 and a pipe 205 connected to the first supply flow path 886 via this connection 11. In the first variation, the shielding gas is fed to the nozzle 800 via a connection 14 sealed by a sealing portion 15 and a pipe 16 connected to the second supply or discharge flow path 887 via this connection 14. In the second variation, the test gas is fed from the nozzle 800 via a connection 14 sealed by a sealing portion 15 and a pipe 16 connected to the second supply or discharge flow path 887 via this connection 14. For this purpose, a suction pump may be provided.

[0080] The first supply channel 886 and the second supply or discharge channel 887 are formed in a circumferential flange 888. The flange 888 has an outer surface 888a that faces the holding surface 40 of the holding device 4. In a first embodiment of the inventive installation 1, the nozzle 800 is supported on the contact device by the outer surface 888a via the connecting element 10, as shown in Figure 7 in relation to the nozzle 8.

[0081] The nozzle body 881 extends through the opening 62 of the contact device. In this case, a first front surface 881a of the nozzle body 881, and together with this first front surface 881a, a first nozzle opening 884 and a second nozzle opening 889, are arranged facing the holding surface 40 of the holding device 4. In this case, as shown in FIG. 6B in connection with the nozzle 8, a distance is formed between the first front surface 881a of the nozzle body 881 and the holding device 4. This distance is selected so that the nozzle 800 does not come into contact with the holding device 4 and the semiconductor element 102 when the substrate 101 is held by the holding device 4. The distance C between the front surface 881a of the nozzle body 881 and the sensor layer 104 of the held semiconductor element 102a is smaller than the distance D. Similarly, the distance C is in the range greater than 0 and less than 0.1 mm. In this case, the distance D corresponds to the sum of the distance C and the thickness of the held semiconductor element 102a. The distances C, D, and the thickness of the held semiconductor element 102a each correspond to the z coordinate. The z coordinate corresponds to the vertical direction.

[0082] The nozzle 800 is spaced apart from the holding surface 40 and, when the holding surface 40 holds the substrate 101, is spaced apart from the held semiconductor element 102a. Therefore, a gap 17 is formed between the first front surface 881a of the nozzle body 881 and the semiconductor element 102a. The size of the gap 17 is determined by the distance C and must be as small as possible. In a first variation, the test gas—which reaches the gap 17 through the first nozzle opening (arrow B)—and the shielding gas—which reaches the gap 17 through the second opening (arrow S)—flow out through the gap 17 (arrow H in FIG. 10 ). The gap 17 then forms an outflow region. In a second variation, after the test gas flows out of the first nozzle opening 884, the test gas reaches the gap 17 (arrow B in FIG. 11 ) and then flows into the nozzle 800 through the second nozzle opening 889 (arrow K). In this case, ambient gas also flows from the interior space 3 into the nozzle 800 via the second nozzle opening 889 (arrow L).

[0083] The first nozzle opening 884 and the second nozzle opening 889 face the sensor layer 104 of the held semiconductor element 102a and are spaced apart from this sensor layer 104. FIG. 9B shows the held semiconductor element 102a and the first front surface 881a of the nozzle 800. In this case, the nozzle wall portion 882 starting from the first front surface 881a, i.e., including the nozzle bridge 890, is shown with diagonal lines. It can be seen that the dimensions F1 and F2 of the first nozzle opening 884 are larger than the dimensions E1 and E2 of the sensor layer 104. The dimensions F1′ and F2′ of the inner edge 889i of the second nozzle opening 889 are larger than the dimensions F1 and F2 of the first nozzle opening. However, the dimensions F1 and F2 of the first nozzle opening are smaller than the dimensions of the held semiconductor element 102a. The dimensions F1 and F2 of the first nozzle opening correspond to the dimensions of the peripheral region 107 plus the dimensions E1 and E2 of the sensor layer 104. Thus, first nozzle opening 884 and second nozzle opening 889 do not extend across contact surface 105. In this case, dimensions E1, F1, and F1′ correspond to the x coordinate, and dimensions E2, F2, and F2′ correspond to the y coordinate.

[0084] The second embodiment of the equipment of the present invention shown in FIG. 12 corresponds to the first embodiment, except that the nozzle 8 is not fixed to the contact device 6. Therefore, the connecting element 10 is not necessary. Instead, a positioning device 13 is provided in the second embodiment. The nozzle 8 is movable in the x, y, and z directions by the positioning device 13 and is rotatable around an axis on the z coordinate. As shown in FIG. 8, the nozzle 8 can be positioned by the positioning device 13 so that its first front surface faces the holding surface 40 at a predetermined distance D or faces the sensor layer 104 of the held semiconductor element at a predetermined distance C. The positioning device 13 can be fixed to the wall portion 2s of the chamber 2.

[0085] 13A and 13B show an embodiment of a mechanism for measuring the distance between a held semiconductor element and the nozzle 8. This measuring mechanism is fixed to the nozzle 8 (not shown) and includes a test needle 27 and a contact element 28. The test needle 27 intersects with the contact element 28 (FIG. 13A). Similarly, the contact element 28 may be needle-shaped. The test needle 27 and the contact element 28 are electrically connected at the intersecting point. The test needle 27, connected to the connection portion 29, and the contact element 28, connected to the connection portion 30, are part of an electrical circuit. The test needle 27 has a tip that extends—relative to its main body—inclined toward the held semiconductor element, for example, at an angle of 45° to the main body of the test needle. When the nozzle 8 and the test needle 27 together with the nozzle 8 move toward the held semiconductor element 102a, the tip comes into contact with a contact surface 105. For this reason, the contact surface 105 is formed on the held semiconductor element 102a.

[0086] FIG. 13A shows the initial state. In this state, the tip of the test needle 27 does not contact the contact surface 105. The distance between the nozzle and the held semiconductor element is large. To reduce this distance, the nozzle moves along the z-coordinate on the axis G toward the held semiconductor element 102a, and the tip of the test needle 27 contacts the contact surface 105 (see FIG. 13B). When the tip contacts the contact surface, the contact between the test needle 27 and the contact element 28 at the intersection position is terminated. When the obliquely extending tip of the test needle 27 contacts the contact surface, the tip bends. The tip slides along the x-coordinate and / or z-coordinate. Because the contact element 28 no longer contacts the test needle, the electrical connection between the test needle 27 and the contact element 28 is terminated. The electrical circuit is interrupted. This interruption can be detected, for example, by software. At this time, the movement of the nozzle along the z-coordinate is stopped.

[0087] The sliding movement is easily visible from above by an optical device 9, e.g., a microscope. Unlike conventional evaluations of vertical distance, which can be problematic, this lateral movement is a very good indicator of the achievement of contact between the test needle 27 and the held semiconductor element. [Explanation of symbols]

[0088] 1 equipment 2 chambers 2o Top section 2s Wall section 2u bottom part 3. Interior space 4 Holding device 40 Holding surface 41 1st holding area 42 Second holding area 43 Third holding area 5 Positioning device 6 Contact device 61 Contact needle 62 Opening 63 Penetration 64 Electrical Cable 7 Support part 8 nozzles 81 Nozzle body 81a First front surface of nozzle body 81b second front surface of nozzle body 82 Nozzle wall 83 Flow path 84 First nozzle opening 85 Windows 86 First supply channel 87 Second supply channel 88 flange 88a Exterior 9 Optical equipment 10 Connecting Elements 11 Connection 12 Sealed part 13 Positioning device 14 Connection 15 Sealed part 16 Piping 17 Gap 18 Inlet 181 Throttle valve 182 Block valve 183 Opening 19 Outlet 191 Pump 192 Control valve 193 Opening 20 Feeding device 201 Throttle valve 202 Block valve 203 Penetration 205 Piping 21 Measuring equipment 22 Door 23 Window 24 Opening 25 Insert section 26 Windows 27 Test needle 28 Contact Elements 29 Connection 30 Connection 800 Second Nozzle 881 Nozzle body 881a Nozzle body first front face 881b Nozzle body second front face 882 Nozzle wall 883 First Channel 8831 Second flow path 884 No. 1 nozzle opening 885 windows 886 First supply channel 887 Second supply or discharge flow path 888 flange 888a Exterior 889 Second nozzle opening 889i inner edge 889a outer edge 890 Nozzle Bridge 101 Substrate 101a Top surface of the substrate 101b Bottom surface of the board 102 Semiconductor elements 102a Exemplary semiconductor device 103 Semiconductor element boundary 104 Sensor Layer 105 Contact surface 106 Spacing Surface 106a Spacing plane 107 Surrounding Area

Claims

1. An apparatus (1) for testing an electronic semiconductor element (102a) formed on a substrate (101) with a test gas, the apparatus having a sensor layer (104) for detecting a gaseous substance, the apparatus comprising: The equipment (1) has a chamber (2) enclosing an internal space (3) that is under reduced or increased pressure; a holding device (4) for holding the substrate (101); a nozzle (8, 800) for injecting a test gas towards a sensor layer (104) of an electronic semiconductor component (102a) formed on a substrate (101) held by a holding device (4); The equipment is arranged in the interior space (3).

2. 2. The installation according to claim 1, characterized in that the nozzle (800) is formed for injecting a shielding gas or for sucking a test gas.

3. The nozzle (8, 800) comprises a nozzle body (81, 881) having a first nozzle opening (84, 884); 3. The installation according to claim 1 or 2, characterized in that the first nozzle opening (84, 884) is arranged opposite the sensor layer (104).

4. 4. The apparatus of claim 3, wherein the first nozzle opening (84, 884) is aligned with the sensor layer (104).

5. The nozzle body (81, 881) has a first front surface (81a, 881a), and a first nozzle opening (84, 884) is formed in the first front surface (81a, 881a), 5. The apparatus according to claim 3, wherein a distance (C) from the sensor layer (104) of the electronic semiconductor element (102a) to the first front surface (81a, 881a) of the nozzle body (81, 881) is greater than 0 mm and less than 0.1 mm.

6. 6. The installation according to claim 5, characterized in that the nozzle body (81, 881) has a flow passage (83, 883) which extends to a first front face (81a, 881a) and in which a first nozzle opening (84, 884) is formed.

7. The nozzle (800) has a second nozzle opening (889) for injecting a shielding gas or for drawing in a test gas; 7. The arrangement according to any one of claims 2 to 6, characterized in that the second nozzle opening (889) is formed in the nozzle body (881) of the nozzle.

8. 8. The installation according to claim 7, characterized in that the nozzle opening (889) is formed around the first nozzle opening (884) forming a nozzle bridge (890).

9. The electronic semiconductor element (102a) has a contact surface (105), which is spaced apart from the sensor layer (104) while forming a spacing surface (106a); 9. The installation according to claim 7 or 8, characterized in that the second nozzle opening faces the spacing surface (106a).

10. 10. Installation according to any one of the preceding claims, characterized in that the nozzle (8, 800) tapers in the direction of the holding device (4).

11. 11. The installation according to claim 1, wherein the nozzle (8, 800) has a nozzle wall (82, 882), the material thickness of which decreases in the direction of the holding device (4).

12. The installation according to any one of claims 1 to 11, wherein the installation has a mechanism for indicating or measuring, or for indicating and measuring, the distance between the sensor layer (104) and the nozzle (8).

13. An installation according to any one of the preceding claims, wherein the installation comprises a positioning device (13) for positioning the nozzle (8).

14. The installation has a contact device (6) for electrically contacting the semiconductor element (102a) to the contact surface (105), 14. Installation according to any one of the preceding claims, characterized in that the nozzle (8, 800) is connected to a contacting device (6).

15. A method for testing an electronic semiconductor device (102a) formed on a substrate (101) having a sensor layer (104) for detecting a gaseous substance with a test gas using an equipment (1) having a chamber (2) surrounding an internal space (3) under reduced pressure or pressure, comprising: - positioning a nozzle (8, 800) relative to the sensor layer (104) of the electronic semiconductor component (102a) to enable the injection of a test gas towards said sensor layer (104); - contacting the contact surface (105) of the semiconductor element (102a) by means of a contacting device (6); - outputting a test signal by a contact device (6) to a contact surface of the electronic semiconductor element (102a) while a test gas is injected by a nozzle (8, 800) onto the sensor layer (104).

Images