Substrate processing apparatus

Abstract

To provide a technique capable of reducing power consumption in a substrate processing apparatus.SOLUTION: The substrate processing apparatus includes a chamber, an exhaust system configured to exhaust a gas in the chamber, the exhaust system including a vacuum pump, a dry pump, and an exhaust pipe connecting the vacuum pump and the dry pump, a first heat transfer member covering an outer wall of the chamber, a second heat transfer member covering an outer wall of the vacuum pump, and a heat transfer line configured to thermally connect the first heat transfer member and the second heat transfer member to the exhaust pipe and transfer heat of the chamber and the vacuum pump from the first heat transfer member and the second heat transfer member to the exhaust pipe.SELECTED DRAWING: Figure 2

Description

[Technical Field]

[0001] SUMMARY OF THE INVENTION An exemplary embodiment of the present disclosure relates to a substrate processing apparatus. [Background technology]

[0002] A technique in which a chamber of a plasma processing apparatus has a heater is disclosed in Patent Document 1. A technique in which a plasma etching apparatus has a dry pump is disclosed in Patent Document 2. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Publication No. 2019-192725 [Patent Document 2] Japanese Patent Application Publication No. 2019-153686 Summary of the Invention [Problem to be solved by the invention]

[0004] The present disclosure provides a technique that can reduce power consumption in a substrate processing apparatus. [Means for solving the problem]

[0005] In one exemplary embodiment of the present disclosure, a substrate processing apparatus includes: a chamber; an exhaust system configured to exhaust gas from the chamber, the exhaust system including a vacuum pump, a dry pump, and an exhaust pipe connecting the vacuum pump and the dry pump; a first heat transfer member covering an outer wall of the chamber; a second heat transfer member covering an outer wall of the vacuum pump; and a heat transfer line configured to thermally connect the first heat transfer member and the second heat transfer member to the exhaust pipe and to transfer heat of the chamber and the vacuum pump from the first heat transfer member and the second heat transfer member to the exhaust pipe. [Effects of the Invention]

[0006] According to one exemplary embodiment of the present disclosure, a technique can be provided that can reduce power consumption in a substrate processing apparatus. [Brief explanation of the drawings]

[0007] [Figure 1] FIG. 1 is a diagram illustrating an example of the configuration of a plasma processing system. [Figure 2] FIG. 1 is a diagram illustrating an example of the configuration of a plasma processing apparatus. [Figure 3] 3A and 3B are diagrams illustrating an example of the configuration of a first heat transfer member and its surrounding structure. [Figure 4] 5A and 5B are diagrams illustrating a configuration example of a second heat transfer member and its surrounding structure. [Figure 5] 10A and 10B are diagrams illustrating a configuration example of a third heat transfer member and its surrounding structure. [Figure 6] FIG. 2 is a diagram illustrating an example of the configuration of an exhaust pipe having a heater and a temperature sensor. [Figure 7] 10A and 10B are diagrams illustrating an example of a configuration in which a gap is provided between the first heat transfer member and the side wall of the chamber. [Figure 8] FIG. 10 is a diagram illustrating an example in which the first heat transfer member is configured to cover the upper wall of the chamber. [Figure 9] 10 is a diagram illustrating a configuration example in which a gap is provided between the first heat transfer member and the upper wall of the chamber. FIG. [Figure 10] FIG. 1 is a diagram for explaining an example of the configuration of a substrate processing system. [Figure 11] FIG. 10 is a diagram illustrating an example in which the first heat transfer member is configured to cover the upper wall of the vacuum transfer chamber. [Figure 12] 10A and 10B are diagrams illustrating an example of a configuration in which a gap is provided between the first heat transfer member and the upper wall of the vacuum transfer chamber. DETAILED DESCRIPTION OF THE INVENTION

[0008] Hereinafter, each embodiment of the present disclosure will be described.

[0009] In one exemplary embodiment, there is provided a substrate processing apparatus comprising: a chamber; an exhaust system configured to exhaust gas from the chamber, the exhaust system including a vacuum pump, a dry pump, and an exhaust pipe connecting the vacuum pump and the dry pump; a first heat transfer member covering an outer wall of the chamber; a second heat transfer member covering an outer wall of the vacuum pump; and a heat transfer line configured to thermally connect the first heat transfer member and the second heat transfer member to the exhaust pipe and to transfer heat of the chamber and the vacuum pump from the first heat transfer member and the second heat transfer member to the exhaust pipe.

[0010] In one exemplary embodiment, the outer wall of the chamber includes a heater.

[0011] In one exemplary embodiment, the vacuum pump includes a heater.

[0012] In one exemplary embodiment, the first heat transfer member is positioned in contact with an outer wall of the chamber.

[0013] In one exemplary embodiment, the first heat transfer member is positioned such that a gap is formed between the first heat transfer member and the outer wall of the chamber.

[0014] In one exemplary embodiment, the heating element further includes a first heat insulating member covering the first heat conducting member, and a second heat insulating member covering the second heat conducting member.

[0015] In one exemplary embodiment, the device further comprises a thermal insulator covering the heat transfer line.

[0016] In one exemplary embodiment, the exhaust system further comprises a temperature sensor configured to measure the temperature of the exhaust piping, and a heater configured to heat the exhaust piping based on the measurement result of the temperature sensor.

[0017] In one exemplary embodiment, a substrate processing apparatus is provided, comprising: a chamber; piping; a heat transfer member covering an outer wall of the chamber; and a heat transfer line configured to thermally connect the heat transfer member to the piping and transfer heat of the chamber from the heat transfer member to the piping.

[0018] In one exemplary embodiment, the chamber includes a heater.

[0019] In one exemplary embodiment, the heat transfer member is positioned in contact with the outer wall of the chamber.

[0020] In one exemplary embodiment, the heat transfer member is positioned such that a gap is formed between the heat transfer member and the outer wall of the chamber.

[0021] In one exemplary embodiment, the device further includes a heat insulating member covering the heat transfer member.

[0022] In one exemplary embodiment, the device further comprises a thermal insulator covering the heat transfer line.

[0023] In one exemplary embodiment, a substrate processing apparatus is provided that includes a chamber, a vacuum pump configured to evacuate gas from the chamber, piping, a heat transfer member covering an outer wall of the vacuum pump, and a heat transfer line that thermally connects the heat transfer member to the piping and is configured to transfer heat of the vacuum pump from the heat transfer member to the piping.

[0024] In one exemplary embodiment, the vacuum pump includes a heater.

[0025] In one exemplary embodiment, the device further includes a heat insulating member covering the heat transfer member.

[0026] In one exemplary embodiment, the device further comprises a thermal insulator covering the heat transfer line.

[0027] Hereinafter, each embodiment of the present disclosure will be described in detail with reference to the drawings. In each drawing, the same or similar elements are designated by the same reference numerals, and redundant explanations will be omitted. Unless otherwise specified, the positional relationships, such as up, down, left, and right, will be described based on the positional relationships shown in the drawings. The dimensional ratios in the drawings do not represent actual ratios, and the actual ratios are not limited to the ratios shown in the drawings.

[0028] <An example of a plasma processing system> FIG. 1 is a diagram illustrating an exemplary configuration of a plasma processing system. In one embodiment, the plasma processing system includes a plasma processing device 1 and a control unit 2. The plasma processing system is an example of a substrate processing system, and the plasma processing device 1 is an example of a substrate processing device. The plasma processing device 1 includes a plasma processing chamber 10, a substrate support 11, and a plasma generation unit 12. The plasma processing chamber 10 has a plasma processing space. The plasma processing chamber 10 also has at least one gas supply port for supplying at least one processing gas to the plasma processing space and at least one gas exhaust port for exhausting gas from the plasma processing space. The gas supply port is connected to a gas supply unit 20 (described later), and the gas exhaust port is connected to an exhaust system 40 (described later). The substrate support 11 is disposed in the plasma processing space and has a substrate support surface for supporting a substrate.

[0029] The plasma generating unit 12 is configured to generate plasma from at least one processing gas supplied into the plasma processing space. The plasma formed in the plasma processing space may be capacitively coupled plasma (CCP), inductively coupled plasma (ICP), electron-cyclotron-resonance plasma (ECR plasma), helicon wave plasma (HWP), or surface wave plasma (SWP). Various types of plasma generating units may be used, including alternating current (AC) plasma generating units and direct current (DC) plasma generating units. In one embodiment, the AC signal (AC power) used in the AC plasma generating unit has a frequency in the range of 100 kHz to 10 GHz. Therefore, the AC signal includes a radio frequency (RF) signal and a microwave signal. In one embodiment, the RF signal has a frequency in the range of 100 kHz to 150 MHz.

[0030] The control unit 2 processes computer-executable instructions that cause the plasma processing apparatus 1 to perform various processes described in this disclosure. The control unit 2 may be configured to control each element of the plasma processing apparatus 1 to perform various processes described herein. In one embodiment, part or all of the control unit 2 may be included in the plasma processing apparatus 1. The control unit 2 may include a processing unit 2a1, a storage unit 2a2, and a communication interface 2a3. The control unit 2 may be implemented by, for example, a computer 2a. The processing unit 2a1 may be configured to read a program from the storage unit 2a2 and execute the read program to perform various control operations. The program may be stored in the storage unit 2a2 in advance or may be acquired via a medium when needed. The acquired program is stored in the storage unit 2a2 and read from the storage unit 2a2 by the processing unit 2a1 for execution. The medium may be various storage media readable by the computer 2a or a communication line connected to the communication interface 2a3. The processing unit 2a1 may be a CPU (Central Processing Unit). The storage unit 2a2 may include a random access memory (RAM), a read only memory (ROM), a hard disk drive (HDD), a solid state drive (SSD), or a combination thereof. The communication interface 2a3 may communicate with the plasma processing apparatus 1 via a communication line such as a local area network (LAN).

[0031] The following describes a configuration example of a capacitively coupled plasma processing apparatus as an example of the plasma processing apparatus 1. Fig. 2 is a diagram for explaining a configuration example of a capacitively coupled plasma processing apparatus.

[0032] The capacitively coupled plasma processing apparatus 1 includes a plasma processing chamber 10 (also simply referred to as the "chamber"), a gas supply unit 20, a power supply 30, and an exhaust system 40. The plasma processing apparatus 1 also includes a substrate support 11 and a gas inlet. The gas inlet is configured to introduce at least one process gas into the plasma processing chamber 10. The gas inlet includes a showerhead 13. The substrate support 11 is disposed within the plasma processing chamber 10. The showerhead 13 is disposed above the substrate support 11. In one embodiment, the showerhead 13 forms at least a portion of the ceiling of the plasma processing chamber 10. The plasma processing chamber 10 has a plasma processing space 10s defined by the showerhead 13, a sidewall 10a of the plasma processing chamber 10, and the substrate support 11. The plasma processing chamber 10 is grounded. The showerhead 13 and the substrate support 11 are electrically insulated from the housing of the plasma processing chamber 10.

[0033] The substrate support 11 includes a main body 111 and a ring assembly 112. The main body 111 has a central region 111a for supporting a substrate W and an annular region 111b for supporting the ring assembly 112. A wafer is an example of a substrate W. The annular region 111b of the main body 111 surrounds the central region 111a of the main body 111 in a plan view. The substrate W is disposed on the central region 111a of the main body 111, and the ring assembly 112 is disposed on the annular region 111b of the main body 111 so as to surround the substrate W on the central region 111a of the main body 111. Therefore, the central region 111a is also called a substrate support surface for supporting the substrate W, and the annular region 111b is also called a ring support surface for supporting the ring assembly 112.

[0034] In one embodiment, the main body 111 includes a base 1110 and an electrostatic chuck 1111. The base 1110 includes a conductive member. The conductive member of the base 1110 can function as a lower electrode. The electrostatic chuck 1111 is disposed on the base 1110. The electrostatic chuck 1111 includes a ceramic member 1111a and an electrostatic electrode 1111b disposed within the ceramic member 1111a. The ceramic member 1111a has a central region 111a. In one embodiment, the ceramic member 1111a also has an annular region 111b. Note that the annular region 111b may also be provided by another member surrounding the electrostatic chuck 1111, such as an annular electrostatic chuck or an annular insulating member. In this case, the ring assembly 112 may be disposed on the annular electrostatic chuck or the annular insulating member, or may be disposed on both the electrostatic chuck 1111 and the annular insulating member. Furthermore, at least one RF / DC electrode coupled to an RF power supply 31 and / or a DC power supply 32, which will be described later, may be disposed within the ceramic member 1111a. In this case, the at least one RF / DC electrode functions as a lower electrode. When a bias RF signal and / or a DC signal, which will be described later, is supplied to the at least one RF / DC electrode, the RF / DC electrode is also called a bias electrode. Note that the conductive member of the base 1110 and the at least one RF / DC electrode may function as multiple lower electrodes. Alternatively, the electrostatic electrode 1111b may function as a lower electrode. Therefore, the substrate support 11 includes at least one lower electrode.

[0035] The ring assembly 112 includes one or more annular members. In one embodiment, the one or more annular members include one or more edge rings and at least one cover ring. The edge rings are formed of a conductive or insulating material, and the cover rings are formed of an insulating material.

[0036] The substrate support 11 may also include a temperature adjustment module configured to adjust at least one of the electrostatic chuck 1111, the ring assembly 112, and the substrate to a target temperature. The temperature adjustment module may include a heater, a heat transfer medium, a flow passage 1110a, or a combination thereof. A heat transfer fluid such as brine or a gas flows through the flow passage 1110a. In one embodiment, the flow passage 1110a is formed in the base 1110, and one or more heaters are disposed in the ceramic member 1111a of the electrostatic chuck 1111. The substrate support 11 may also include a heat transfer gas supply configured to supply a heat transfer gas to a gap between the backside of the substrate W and the central region 111a.

[0037] The showerhead 13 is configured to introduce at least one processing gas from the gas supply unit 20 into the plasma processing space 10s. The showerhead 13 has at least one gas supply port 13a, at least one gas diffusion chamber 13b, and multiple gas inlets 13c. The processing gas supplied to the gas supply port 13a passes through the gas diffusion chamber 13b and is introduced into the plasma processing space 10s from the multiple gas inlets 13c. The showerhead 13 also includes at least one upper electrode. In addition to the showerhead 13, the gas introduction unit may also include one or more side gas injectors (SGIs) attached to one or more openings formed in the sidewall 10a.

[0038] The gas supply unit 20 may include at least one gas source 21 and at least one flow controller 22. In one embodiment, the gas supply unit 20 is configured to supply at least one process gas from a corresponding gas source 21 to the showerhead 13 via a corresponding flow controller 22. Each flow controller 22 may include, for example, a mass flow controller or a pressure-controlled flow controller. Additionally, the gas supply unit 20 may include at least one flow modulation device that modulates or pulses the flow rate of the at least one process gas.

[0039] The power supply 30 includes an RF power supply 31 coupled to the plasma processing chamber 10 via at least one impedance matching circuit. The RF power supply 31 is configured to supply at least one RF signal (RF power) to at least one lower electrode and / or at least one upper electrode. This generates a plasma from at least one processing gas supplied to the plasma processing space 10s. Therefore, the RF power supply 31 can function as at least a part of the plasma generation unit 12. Furthermore, by supplying a bias RF signal to the at least one lower electrode, a bias potential is generated on the substrate W, and ion components in the formed plasma can be attracted to the substrate W.

[0040] In one embodiment, the RF power supply 31 includes a first RF generating unit 31a and a second RF generating unit 31b. The first RF generating unit 31a is coupled to at least one lower electrode and / or at least one upper electrode via at least one impedance matching circuit and is configured to generate a source RF signal (source RF power) for plasma generation. In one embodiment, the source RF signal has a frequency in the range of 10 MHz to 150 MHz. In one embodiment, the first RF generating unit 31a may be configured to generate multiple source RF signals having different frequencies. The generated one or more source RF signals are supplied to at least one lower electrode and / or at least one upper electrode.

[0041] The second RF generating unit 31b is coupled to at least one lower electrode via at least one impedance matching circuit and configured to generate a bias RF signal (bias RF power). The frequency of the bias RF signal may be the same as or different from the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency lower than the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency in the range of 100 kHz to 60 MHz. In one embodiment, the second RF generating unit 31b may be configured to generate multiple bias RF signals having different frequencies. The generated one or more bias RF signals are supplied to at least one lower electrode. In various embodiments, at least one of the source RF signal and the bias RF signal may be pulsed.

[0042] The power supply 30 may also include a DC power supply 32 coupled to the plasma processing chamber 10. The DC power supply 32 includes a first DC generator 32a and a second DC generator 32b. In one embodiment, the first DC generator 32a is connected to at least one lower electrode and configured to generate a first DC signal. The generated first DC signal is applied to the at least one lower electrode. In one embodiment, the second DC generator 32b is connected to at least one upper electrode and configured to generate a second DC signal. The generated second DC signal is applied to the at least one upper electrode.

[0043] In various embodiments, the first and second DC signals may be pulsed. In this case, a sequence of voltage pulses is applied to at least one lower electrode and / or at least one upper electrode. The voltage pulses may have a rectangular, trapezoidal, triangular, or combination thereof. In one embodiment, a waveform generator for generating a sequence of voltage pulses from the DC signal is connected between the first DC generator 32a and at least one lower electrode. Thus, the first DC generator 32a and the waveform generator constitute a voltage pulse generator. When the second DC generator 32b and the waveform generator constitute a voltage pulse generator, the voltage pulse generator is connected to at least one upper electrode. The voltage pulses may have either positive or negative polarity. Furthermore, the sequence of voltage pulses may include one or more positive voltage pulses and one or more negative voltage pulses within one period. The first and second DC generating units 32a and 32b may be provided in addition to the RF power supply 31, or the first DC generating unit 32a may be provided instead of the second RF generating unit 31b.

[0044] The exhaust system 40 may be connected to, for example, a gas exhaust port 10e provided at the bottom of the plasma processing chamber 10. The exhaust system 40 may include a pressure regulating valve and a vacuum pump. The pressure regulating valve regulates the pressure in the plasma processing space 10s. The vacuum pump may include a turbomolecular pump, a dry pump, or a combination thereof.

[0045] In one embodiment, the exhaust system 40 includes a vacuum pump 200, a dry pump 201, and an exhaust pipe 202 that connects the vacuum pump 200 and the dry pump 201. In one embodiment, the vacuum pump 200 may include a heater 210. A side wall 200a of the vacuum pump 200 is an example of an outer wall of the vacuum pump 200. The heater 210 may generate heat when power is supplied from a power supply unit.

[0046] The side wall 10a of the chamber 10 may have a heater 220. The side wall 10a of the chamber 10 is an example of an outer wall of the chamber 10. The heater 220 may be disposed inside the side wall 10a. The heater 220 may generate heat when power is supplied from a power supply unit.

[0047] In one embodiment, the plasma processing apparatus 1 includes a first heat transfer member 250, a second heat transfer member 251, a third heat transfer member 252, and a heat transfer line 253.

[0048] The first heat transfer member 250 is configured to cover the side wall 10a of the chamber 10. The first heat transfer member 250 has a heat transfer material. The heat transfer material of the first heat transfer member 250 may be aluminum or copper. In one embodiment, the first heat transfer member 250 has an annular shape that follows the outer circumferential surface of the side wall 10a. The first heat transfer member 250 is in surface contact with the outer circumferential surface of the side wall 10a. As shown in FIG. 3 , the first heat transfer member 250 is covered by a heat insulating member 260. The heat insulating member 260 covers the exposed portion of the first heat transfer member 250. The heat insulating member 260 covers the outer portion of the first heat transfer member 250. A heat conductive insulating member may be interposed between the first heat transfer member 250 and the side wall 10a. The first heat transfer member 250 may constitute a heat absorption portion that absorbs heat from the outer wall of the chamber 10.

[0049] As shown in FIG. 2, the second heat transfer member 251 is configured to cover the side wall 200a of the vacuum pump 200. The second heat transfer member 251 has a heat transfer material. The heat transfer material of the second heat transfer member 251 may be aluminum or copper. In one embodiment, the second heat transfer member 251 has an annular shape that follows the outer circumferential surface of the side wall 200a. As shown in FIG. 4, the second heat transfer member 251 is in surface contact with the outer circumferential surface of the side wall 200a. The second heat transfer member 251 is covered by a heat insulating member 261. The heat insulating member 261 covers an exposed portion of the second heat transfer member 251. The heat insulating member 261 covers an outer portion of the second heat transfer member 251. A heat conductive insulating member may be interposed between the second heat transfer member 251 and the side wall 200a. The second heat transfer member 251 may constitute a heat absorbing portion that absorbs heat from the outer wall of the vacuum pump 200 .

[0050] As shown in FIG. 2, the third heat transfer member 252 is configured to cover the outer wall 202a of the exhaust pipe 202. The third heat transfer member 252 has a heat transfer material. The heat transfer material of the third heat transfer member 252 may be aluminum or copper. In one embodiment, the third heat transfer member 252 has an annular shape that follows the outer peripheral surface of the outer wall 202a. As shown in FIG. 5, the third heat transfer member 252 is in surface contact with the outer peripheral surface of the outer wall 202a. The third heat transfer member 252 may be disposed on a portion of the exhaust pipe 202. The third heat transfer member 252 is covered by a heat insulating member 262. The heat insulating member 262 covers an exposed portion of the third heat transfer member 252. The heat insulating member 262 covers an outer portion of the third heat transfer member 252. A heat conductive insulating member may be interposed between the third heat transfer member 252 and the outer wall 202a. The third heat transfer member 252 may constitute a heat supplying section that supplies heat to the outer wall of the exhaust pipe 202 .

[0051] As shown in FIG. 2, the heat transfer line 253 thermally connects the first heat transfer member 250 and the second heat transfer member 251 to the exhaust pipe 202. In one embodiment, the heat transfer line 253 connects the first heat transfer member 250 and the second heat transfer member 251 to the third heat transfer member 252. The heat transfer line 253 includes a heat transfer material. The heat transfer material of the heat transfer line 253 may be aluminum or copper. In one embodiment, the heat transfer line 253 has a linear shape. As shown in FIGS. 3, 4, and 5, the heat transfer line 253 is covered with a heat insulating member 263. The heat insulating member 263 covers the exposed portion of the heat transfer line 253. The heat insulating member 263 covers the entire outer circumferential surface of the heat transfer line 253. The heat transfer line 253 may constitute a heat transfer unit.

[0052] <An example of plasma treatment> A plasma process is performed in the plasma processing apparatus 1. The plasma process includes an etching process in which a film on a substrate W is etched using plasma. In one embodiment, the plasma process is performed by a control unit 2 in the plasma processing apparatus 1.

[0053] In the plasma processing apparatus 1 shown in FIG. 2, first, the substrate W is carried into the chamber 10 by a transfer arm, placed on the substrate support portion 11 by a lifter, and held on the substrate support portion 11 by suction.

[0054] Next, a processing gas is supplied to the plasma processing space 10s by the gas supply unit 20 through the shower head 13. The processing gas supplied at this time includes a gas that generates active species necessary for etching the substrate W.

[0055] A source RF signal for generating plasma is supplied to the upper electrode and / or lower electrode by the RF power supply 31 of the plasma generating unit 12. A bias signal for attracting ion components in the plasma to the substrate is supplied to the lower electrode by the RF power supply 31 or DC power supply 32. The atmosphere in the plasma processing space 10s is exhausted from the gas exhaust port 10e by the exhaust system 40, and the inside of the plasma processing space 10s is depressurized. In this way, plasma is generated from the processing gas on the substrate support 11 in the plasma processing space 10s, and the substrate W is etched.

[0056] During plasma processing, the heater 220 heats the outer wall of the chamber 10. This prevents gas components in the chamber 10 from depositing on the inner wall of the chamber 10. The heater 210 heats the outer wall of the vacuum pump 200. This prevents gas components passing through the vacuum pump 200 from depositing on the inner wall of the vacuum pump 200. Heat from the chamber 10 is absorbed by the first heat transfer member 250 and transferred to the third heat transfer member 252 through the heat transfer line 253. The heat from the chamber 10 includes heat generated by the heater 220 and heat generated by plasma generation. Heat from the vacuum pump 200 is absorbed by the second heat transfer member 251 and transferred to the third heat transfer member 252 through the heat transfer line 253. The heat of the vacuum pump 200 includes heat generated by the heater 210, heat generated by plasma generation, and heat generated by operation of the vacuum pump 200, and is supplied to the exhaust pipe 202 from the third heat transfer member 252. In this way, the exhaust pipe 202 is heated, and gas components passing through the exhaust pipe 202 are prevented from depositing on the inner wall of the exhaust pipe 202.

[0057] According to this exemplary embodiment, the plasma processing apparatus 1 includes a first heat transfer member 250 covering the outer wall of the chamber 10, a second heat transfer member 251 covering the outer wall of the vacuum pump 200, and a heat transfer line 253 that thermally connects the first heat transfer member 250 and the second heat transfer member 251 to the exhaust pipe 202 and is configured to transfer heat from the chamber 10 and the vacuum pump 200 from the first heat transfer member 250 and the second heat transfer member 251 to the exhaust pipe 202. As a result, the exhaust pipe 202 is heated using the heat from the chamber 10 and the vacuum pump 200, and the generation of deposits on the inner wall of the exhaust pipe 202 is suppressed. Since the heat from the chamber 10 and the vacuum pump 200 is used to heat the exhaust pipe 202 in this manner, power consumption in the plasma processing apparatus 1 can be reduced.

[0058] In the above embodiment, as shown in FIG. 6 , the exhaust system 40 may include a temperature sensor 300 and a heater 301. The temperature sensor 300 is configured to measure the temperature of the exhaust pipe 202. The temperature sensor 300 may be a thermoelectric conversion power supply type temperature sensor. The heater 301 is configured to heat the exhaust pipe 202. The heater 301 may be disposed between the heat insulating member 262 and the third heat transfer member 252. The control unit 2 may control the amount of heat generated by the heater 301 based on the detection result of the temperature sensor 300. The control unit 2 may control the heater 301 so that the exhaust pipe 202 reaches a given temperature. The control unit 2 may cause the heater 301 to generate heat when the exhaust pipe 202 is below the given temperature. This allows the temperature of the exhaust pipe 202 to be actively controlled. Furthermore, when the heat supplied from the chamber 10 and the vacuum pump 200 to the exhaust pipe 202 is insufficient, the heater 301 can be made to generate heat to warm the exhaust pipe 202 .

[0059] 7, the first heat transfer member 250 may be configured so that a gap 270 is formed between the first heat transfer member 250 and the side wall 10a of the chamber 10. In this case, heat from the chamber 10 is absorbed by the first heat transfer member 250 through the gap 270 and transferred to the exhaust pipe 202 through the heat transfer line 253.

[0060] The second heat transfer member 251 may be configured so that a gap is formed between the second heat transfer member 251 and the outer wall of the vacuum pump 200. In this case, heat from the vacuum pump 200 is absorbed by the second heat transfer member 251 through the gap and is transferred to the exhaust pipe 202 through the heat transfer line 253.

[0061] 8, the first heat transfer member 250 may be configured to cover the upper wall 10b of the chamber 10. The first heat transfer member 250 may be configured to cover the shower head (upper electrode) 13 of the chamber 10. The first heat transfer member 250 is in surface contact with the upper wall 10b of the chamber 10. The first heat transfer member 250 is covered by a heat insulating member 260. The first heat transfer member 250 is thermally connected to the exhaust pipe 202 by a heat transfer line 253. As shown in FIG. 9, the first heat transfer member 250 may be configured to cover the upper wall 10b of the chamber 10 while forming a gap 280 between the first heat transfer member 250 and the upper wall 10b of the chamber 10.

[0062] The first heat transfer member 250 and the second heat transfer member 251 may be thermally connected to a pipe other than the exhaust pipe 202 by a heat transfer line 253. For example, the first heat transfer member 250 and the second heat transfer member 251 may be thermally connected to another pipe leading to the internal space of the chamber 10 of the plasma processing apparatus 1. The other pipe may be a pipe on which measuring instruments such as a pressure gauge are provided. In this way, heat from the chamber 10 or the vacuum pump 200 is supplied to the other pipe.

[0063] The chamber whose outer wall is covered with the first heat transfer member 250 is not limited to the plasma processing chamber 10, but may be any other chamber of the substrate processing apparatus.

[0064] 10 is a diagram illustrating an example of the configuration of the substrate processing apparatus PS in this case. The substrate processing apparatus PS includes substrate processing modules PM1 to PM4 (hereinafter also collectively referred to as "substrate processing modules PM"), a transfer module TM, load lock modules LLM1 and LLM2 (hereinafter also collectively referred to as "load lock modules LLM"), a loader module LM, and load ports LP1 to LP3 (hereinafter also collectively referred to as "load ports LP"). A controller CT controls each component of the substrate processing apparatus PS to perform a given process on a substrate W.

[0065] The substrate processing modules PM perform processes such as etching, trimming, film formation, annealing, doping, lithography, cleaning, and ashing on substrates W therein. Some of the substrate processing modules PM may be a capacitively coupled plasma processing apparatus 1 as shown in FIG. 2. That is, at least one of the substrate processing modules PM1 to PM4 may be coupled to a capacitively coupled plasma generation unit. Some of the substrate processing modules PM may be an inductively coupled plasma processing apparatus. That is, at least one of the substrate processing modules PM1 to PM4 may be coupled to an inductively coupled plasma generation unit. Some of the substrate processing modules PM may be a measurement module that may measure the thickness of a film formed on the substrate W or the dimensions of a pattern formed on the substrate W using, for example, an optical technique.

[0066] The transfer module TM transfers substrates W between substrate processing modules PM or between the substrate processing modules PM and the load lock modules LLM. The substrate processing modules PM and the load lock modules LLM are arranged adjacent to the transfer module TM. As shown in FIG. 11 , the transfer module TM includes a vacuum transfer chamber 350 and a transfer apparatus 351 that transfers substrates W. The transfer apparatus 351 is arranged within the vacuum transfer chamber 350. The vacuum transfer chamber 350 may include a heater. The vacuum transfer chamber 350 is spatially isolated from or connected to the substrate processing modules PM and the load lock modules LLM by openable and closable gate valves 352.

[0067] As shown in FIG. 10, the load lock modules LLM1 and LLM2 are provided between the transfer module TM and the loader module LM. The load lock module LLM can switch its internal pressure between atmospheric pressure and vacuum. "Atmospheric pressure" may be the pressure outside each module included in the substrate processing apparatus PS. "Vacuum" may be a pressure lower than atmospheric pressure, for example, a medium vacuum of 0.1 Pa to 100 Pa. The load lock module LLM transfers a substrate W from the loader module LM, which is at atmospheric pressure, to the transfer module TM, which is at vacuum, and also transfers the substrate W from the transfer module TM, which is at vacuum, to the loader module LM, which is at atmospheric pressure.

[0068] The loader module LM has a transport device for transporting substrates W, and transports substrates W between the load lock module LLM and the load port LP. A FOUP (Front Opening Unified Pod) capable of storing, for example, 25 substrates W, or an empty FOUP can be placed inside the load port LP. The loader module LM removes substrates W from the FOUP in the load port LP and transports them to the load lock module LLM. The loader module LM also removes substrates W from the load lock module LLM and transports them to the FOUP in the load port LP.

[0069] The controller CT controls each component of the substrate processing apparatus PS to perform a given process on the substrate W. The controller CT stores a recipe in which the process procedure, process conditions, transport conditions, etc. are set, and controls each component of the substrate processing apparatus PS to perform the given process on the substrate W in accordance with the recipe. The controller CT may also have some or all of the functions of the controller 2 shown in FIG.

[0070] 11 , in one embodiment, the first heat transfer member 250 is configured to cover the upper wall 350a of the vacuum transfer chamber 350. The first heat transfer member 250 is in surface contact with the upper wall 350a of the vacuum transfer chamber 350. The first heat transfer member 250 is covered by a heat insulating member 260. The first heat transfer member 250 may have a configuration that can be separated into multiple parts. The first heat transfer member 250 may be thermally connected to the exhaust pipe 202 of the plasma processing apparatus 1 via a heat transfer line 253. According to this example, heat generated in the vacuum transfer chamber 350 can be supplied to the exhaust pipe 202. The first heat transfer member 250 may be thermally connected to a pipe other than the exhaust pipe 202 in the substrate processing apparatus PS via the heat transfer line 253.

[0071] As shown in FIG. 12, the first heat transfer member 250 may be configured to cover the top wall 350a of the vacuum transfer chamber 350 while forming a gap 400 between the first heat transfer member 250 and the top wall 350a of the vacuum transfer chamber 350.

[0072] In the above-described embodiment, the first heat transfer member 250 may be configured to cover the outer walls of multiple chambers. For example, the first heat transfer member 250 may be configured to cover two or three of the side wall 10a of the chamber 10, the top wall 10b of the chamber 10, and the top wall 350a of the vacuum transfer chamber 350. The first heat transfer member 250 may be configured to cover the outer walls of chambers other than the chamber 10 and the vacuum transfer chamber 350 in the substrate processing apparatus.

[0073] The vacuum pump whose outer wall is covered with the second heat transfer member 251 is not limited to the vacuum pump 200 of the plasma processing apparatus 1, and may be another vacuum pump of the substrate processing apparatus. For example, the substrate processing apparatus PS may have a vacuum pump configured to exhaust gas from the vacuum transfer chamber 350 or the load lock module LLM, and the second heat transfer member 251 may be configured to cover the outer wall of the vacuum pump. The second heat transfer member 251 may be thermally connected to the exhaust pipe 202 via the heat transfer line 253. The second heat transfer member 251 may be thermally connected to a pipe other than the exhaust pipe 202 in the substrate processing apparatus PS via the heat transfer line 253. Furthermore, the second heat transfer member 251 may be configured to cover the outer walls of multiple vacuum pumps.

[0074] The above-described embodiment may be applied to a substrate processing apparatus that does not use plasma.

[0075] Embodiments of the present disclosure further include the following aspects.

[0076] (Appendix 1) a chamber; an exhaust system configured to exhaust gas from the chamber, the exhaust system including a vacuum pump, a dry pump, and an exhaust pipe connecting the vacuum pump and the dry pump; a first heat transfer member covering an outer wall of the chamber; a second heat transfer member covering an outer wall of the vacuum pump; a heat transfer line configured to thermally connect the first heat transfer member and the second heat transfer member to the exhaust piping and to transfer heat of the chamber and the vacuum pump from the first heat transfer member and the second heat transfer member to the exhaust piping; Substrate processing equipment.

[0077] (Appendix 2) the outer wall of the chamber includes a heater; 2. The substrate processing apparatus according to claim 1.

[0078] (Appendix 3) the vacuum pump includes a heater; 3. The substrate processing apparatus according to claim 1 or 2.

[0079] (Appendix 4) the first heat transfer member is disposed so as to be in contact with an outer wall of the chamber; 4. The substrate processing apparatus according to claim 1,

[0080] (Appendix 5) the first heat transfer member is disposed so as to form a gap between the first heat transfer member and an outer wall of the chamber. 4. The substrate processing apparatus according to claim 1,

[0081] (Appendix 6) a first heat insulating member covering the first heat transfer member; Further comprising a second heat insulating member covering the second heat transfer member. 6. The substrate processing apparatus according to claim 1,

[0082] (Appendix 7) Further provided is a heat insulating member covering the heat transfer line. 7. The substrate processing apparatus according to claim 1,

[0083] (Appendix 8) a temperature sensor configured to measure a temperature of the exhaust piping; a heater configured to heat the exhaust pipe based on the measurement result of the temperature sensor, 8. The substrate processing apparatus according to claim 1,

[0084] (Appendix 9) a chamber; Piping and a heat transfer member covering an outer wall of the chamber; a heat transfer line configured to thermally connect the heat transfer member to the piping and transfer heat of the chamber from the heat transfer member to the piping. Substrate processing equipment.

[0085] (Appendix 10) the chamber includes a heater; 10. The substrate processing apparatus according to claim 9.

[0086] (Appendix 11) The heat transfer member is disposed so as to contact an outer wall of the chamber. 11. The substrate processing apparatus according to claim 9 or 10.

[0087] (Appendix 12) The heat transfer member is disposed so as to form a gap between the heat transfer member and an outer wall of the chamber. 11. The substrate processing apparatus according to claim 9 or 10.

[0088] (Appendix 13) Further provided is a heat insulating member covering the heat transfer member. 13. The substrate processing apparatus according to any one of claims 9 to 12.

[0089] (Appendix 14) Further provided is a heat insulating member covering the heat transfer line. 14. The substrate processing apparatus according to any one of claims 9 to 13.

[0090] (Appendix 15) a chamber; a vacuum pump configured to evacuate gas within the chamber; Piping and a heat transfer member covering an outer wall of the vacuum pump; a heat transfer line configured to thermally connect the heat transfer member to the piping and transfer heat of the vacuum pump from the heat transfer member to the piping, Substrate processing equipment.

[0091] (Appendix 16) the vacuum pump includes a heater; 16. The substrate processing apparatus of claim 15.

[0092] (Appendix 17) Further provided is a heat insulating member covering the heat transfer member. 17. The substrate processing apparatus according to claim 15 or 16.

[0093] (Appendix 18) Further provided is a heat insulating member covering the heat transfer line. 18. The substrate processing apparatus according to any one of claims 15 to 17.

[0094] The above embodiments are described for the purpose of explanation and are not intended to limit the scope of the present disclosure. Various modifications can be made to the above embodiments without departing from the scope and spirit of the present disclosure. For example, some components in one embodiment can be added to other embodiments. Also, some components in one embodiment can be replaced with corresponding components in other embodiments. [Explanation of symbols]

[0095] 1: plasma processing apparatus, 10: chamber, 10a: side wall, 200: vacuum pump, 201: dry pump, 202: exhaust pipe, 250: first heat transfer member, 251: second heat transfer member, 253: heat transfer line, W: substrate

Claims

1. a chamber; an exhaust system configured to exhaust gas from the chamber, the exhaust system including a vacuum pump, a dry pump, and an exhaust pipe connecting the vacuum pump and the dry pump; a first heat transfer member covering an outer wall of the chamber; a second heat transfer member covering an outer wall of the vacuum pump; a heat transfer line configured to thermally connect the first heat transfer member and the second heat transfer member to the exhaust piping and to transfer heat of the chamber and the vacuum pump from the first heat transfer member and the second heat transfer member to the exhaust piping; Substrate processing equipment.

2. the outer wall of the chamber includes a heater; The substrate processing apparatus according to claim 1 .

3. the vacuum pump includes a heater; The substrate processing apparatus according to claim 1 .

4. the first heat transfer member is disposed in contact with an outer wall of the chamber; The substrate processing apparatus according to claim 1 .

5. the first heat transfer member is disposed so as to form a gap between the first heat transfer member and an outer wall of the chamber; The substrate processing apparatus according to claim 1 .

6. a first heat insulating member covering the first heat transfer member; Further provided is a second heat insulating member covering the second heat transfer member. The substrate processing apparatus according to claim 1 .

7. Further provided is a heat insulating member covering the heat transfer line. The substrate processing apparatus according to claim 1 .

8. a temperature sensor configured to measure a temperature of the exhaust piping; a heater configured to heat the exhaust pipe based on the measurement result of the temperature sensor, The substrate processing apparatus according to claim 1 .

9. a chamber; Piping and a heat transfer member covering an outer wall of the chamber; a heat transfer line configured to thermally connect the heat transfer member to the piping and transfer heat of the chamber from the heat transfer member to the piping. Substrate processing equipment.

10. the chamber includes a heater; The substrate processing apparatus according to claim 9 .

11. The heat transfer member is disposed so as to contact an outer wall of the chamber. The substrate processing apparatus according to claim 9 .

12. The heat transfer member is disposed so as to form a gap between the heat transfer member and an outer wall of the chamber. The substrate processing apparatus according to claim 9 .

13. Further provided is a heat insulating member covering the heat transfer member. The substrate processing apparatus according to claim 9 .

14. Further provided is a heat insulating member covering the heat transfer line. The substrate processing apparatus according to claim 9 .

15. a chamber; a vacuum pump configured to evacuate gas within the chamber; Piping and a heat transfer member covering an outer wall of the vacuum pump; a heat transfer line configured to thermally connect the heat transfer member to the piping and transfer heat of the vacuum pump from the heat transfer member to the piping, Substrate processing equipment.

16. the vacuum pump includes a heater; The substrate processing apparatus according to claim 15 .

17. Further provided is a heat insulating member covering the heat transfer member. The substrate processing apparatus according to claim 15 .

18. Further provided is a heat insulating member covering the heat transfer line. The substrate processing apparatus according to claim 15 .

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