Substrate processing apparatus

Abstract

To provide a substrate processing apparatus capable of coping with various processings.SOLUTION: The substrate processing apparatus 100 includes a chamber 11, a substrate holder 200, and a turning mechanism 320. The chamber 11 has an opening 12 through which the inside and the outside communicate with each other and the substrate W is carried in and out. The substrate holder 200 is disposed in the chamber 11 and holds the substrates W one by one. The turning mechanism 320 turns the substrate holder 200 to move the substrate holder 200 among a plurality of processing positions Q at which the substrate W is processed with the processing liquid in the chamber 11.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present invention relates to a substrate processing apparatus. [Background technology]

[0002] Conventionally, substrate processing apparatuses for processing substrates have been known. Substrate processing apparatuses are preferably used in the manufacture of semiconductor substrates. Substrate processing apparatuses process substrates using a processing liquid such as a chemical solution. Known substrate processing apparatuses include a single-wafer type substrate processing apparatus that processes substrates one by one, and a batch type substrate processing apparatus that processes multiple substrates by immersing them in a processing tank at once. For example, Patent Document 1 describes a single-wafer type substrate processing apparatus that includes a holding and rotating unit that holds and rotates the substrates, and a discharging unit that discharges a processing liquid onto the substrates being rotated by the holding and rotating unit.

[0003] In single-wafer substrate processing equipment, substrates are processed by holding them horizontally and rotating them one by one, while supplying processing liquid to the rotating substrates. Generally, single-wafer substrate processing equipment can be made smaller than batch-type substrate processing equipment, which makes it possible to reduce the amount of processing liquid consumed. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] Japanese Patent Publication No. 2020-126886 Summary of the Invention [Problem to be solved by the invention]

[0005] However, in conventional single-wafer substrate processing apparatuses, each chamber generally has only one processing position, making it difficult to accommodate a variety of processes.

[0006] The present invention has been made in view of the above-mentioned problems, and an object of the present invention is to provide a substrate processing apparatus that can handle a variety of processes. [Means for solving the problem]

[0007] According to one aspect of the present invention, a substrate processing apparatus includes a chamber, a substrate holding unit, and a rotation mechanism. The chamber has an entrance communicating the interior with the exterior and through which substrates are loaded and unloaded. The substrate holding unit is disposed within the chamber and holds the substrates one by one. The rotation mechanism rotates the substrate holding unit to move the substrate holding unit among a plurality of processing positions within the chamber where the substrates are processed with a processing liquid.

[0008] In one embodiment, the substrate processing apparatus includes an immersion tank disposed at the processing position, for storing the processing liquid, and for accommodating the substrate and immersing the substrate in the processing liquid.

[0009] In one embodiment, the substrate holder rotates about a pivot axis, and the processing positions are located on concentric circles around the pivot axis.

[0010] In one embodiment, the substrate holder is capable of rotating one or more revolutions around the rotation axis.

[0011] In one embodiment, the number of the plurality of processing positions is three or more. The substrate holder transports the substrate to the plurality of processing positions in sequence in a predetermined rotation direction around the rotation axis.

[0012] In one embodiment, the substrate processing apparatus includes a support member. The support member is disposed inside the chamber and supports the substrate. A support position where the support member is disposed is provided inside the chamber. The support position is located closer to the entrance / exit than the plurality of processing positions. The substrate holder transports the substrate from the support position to the processing position.

[0013] In one embodiment, the plurality of processing positions include a first processing position and a second processing position, wherein the substrate is processed at the first processing position with a first processing liquid, and the substrate is processed at the second processing position with a second processing liquid different from the first processing liquid.

[0014] In one embodiment, the processing liquid includes a chemical liquid, and the plurality of processing positions include at least two processing positions that process the substrate with the same chemical liquid.

[0015] In one embodiment, the entrance / exit is provided for each of the at least two processing positions.

[0016] In one embodiment, the substrate holder processes at least two of the substrates in parallel by sequentially transporting the substrates to the at least two processing positions.

[0017] In one embodiment, the plurality of processing positions include a first processing position, a second processing position, and a third processing position. The processing liquid includes a first chemical liquid, a second chemical liquid different from the first chemical liquid, and a rinse liquid. At the first processing position, the substrate is processed with the first chemical liquid. At the second processing position, the substrate is processed with the second chemical liquid. At the third processing position, the substrate is processed with the rinse liquid.

[0018] In one embodiment, the substrate processed at the first processing position is rinsed, and the substrate processed at the second processing position is rinsed at one of the third processing positions.

[0019] In one embodiment, a plurality of the third processing positions are provided, including a third processing position for rinsing the substrate processed at the first processing position and a third processing position for rinsing the substrate processed at the second processing position.

[0020] In one embodiment, the substrate holder holds the substrate horizontally and includes a base disposed above the substrate and a plurality of chuck pins protruding downward from the base to hold the periphery of the substrate.

[0021] In one embodiment, the substrate processing apparatus includes an immersion tank, a processing liquid supply unit, and a lifting mechanism. The immersion tank is disposed at the processing position, stores the processing liquid, and accommodates the substrate to immerse the substrate in the processing liquid. The processing liquid supply unit supplies the processing liquid to the immersion tank. The lifting mechanism moves the substrate holding unit and the immersion tank relative to each other in the vertical direction. The lifting mechanism immerses the substrate in the processing liquid by moving the substrate holding unit or the immersion tank while the processing liquid is stored in the immersion tank.

[0022] In one embodiment, the substrate holder rotatably holds the substrate, and while the substrate holder rotates the substrate, the lifting mechanism immerses the substrate in the treatment liquid stored in the immersion tank.

[0023] In one embodiment, while the processing liquid supply unit supplies the processing liquid toward the substrate, the lifting mechanism immerses the substrate in the processing liquid stored in the immersion tank. [Effects of the Invention]

[0024] According to the present invention, it is possible to provide a substrate processing apparatus that can handle a variety of processes. [Brief explanation of the drawings]

[0025] [Figure 1] FIG. 1 is a schematic plan view of a substrate processing apparatus according to a first embodiment. [Figure 2] FIG. 1 is a block diagram of a substrate processing apparatus according to a first embodiment. [Figure 3] FIG. 2 is a flowchart of a substrate processing method according to the first embodiment. [Figure 4]FIG. 2 is a schematic view of a substrate processing unit in the substrate processing apparatus of the first embodiment. [Figure 5] 2 is a schematic view showing the structure around a substrate holding unit and a moving mechanism of the substrate processing apparatus according to the first embodiment. FIG. [Figure 6] FIG. 4 is a flowchart of a substrate processing method at one processing position according to the first embodiment. [Figure 7] 5A to 5C are schematic views for explaining a substrate processing method at one processing position in the first embodiment. [Figure 8] 5A to 5C are schematic views for explaining a substrate processing method at one processing position in the first embodiment. [Figure 9] 5A to 5C are schematic views for explaining a substrate processing method at one processing position in the first embodiment. [Figure 10] FIG. 10 is a flowchart of a substrate processing method for the substrate processing apparatus of the first modified example. [Figure 11] FIG. 10 is a flowchart of a substrate processing method at one processing position according to a first modified example. [Figure 12] FIG. 10 is a schematic plan view of a substrate processing apparatus according to a second embodiment. [Figure 13] FIG. 10 is a flowchart of a substrate processing method according to a second embodiment. [Figure 14] FIG. 10 is a schematic plan view of a substrate processing apparatus according to a third embodiment. [Figure 15] FIG. 2 is a schematic plan view showing the inside of one chamber. [Figure 16] FIG. 10 is a flowchart of a substrate processing method according to a third embodiment. [Figure 17] FIG. 10 is a schematic view of a substrate processing unit in a substrate processing apparatus according to a third embodiment. [Figure 18] FIG. 11 is a schematic diagram for explaining a rinsing process at a processing position Q4 according to the third embodiment. [Figure 19] FIG. 10 is a schematic plan view showing the inside of one chamber of a substrate processing apparatus according to a second modified example. [Figure 20] FIG. 11 is a schematic plan view showing the inside of one chamber of a substrate processing apparatus according to a third modified example. [Figure 21]FIG. 10 is a flowchart of a substrate processing method according to a third modified example. [Figure 22] FIG. 11 is a schematic plan view showing the inside of one chamber of a substrate processing apparatus according to a fourth modified example. [Figure 23] FIG. 10 is a flowchart of a substrate processing method according to a fourth modified example. [Figure 24] FIG. 10 is a schematic plan view of a substrate processing apparatus according to a fourth embodiment. [Figure 25] FIG. 10 is a flowchart of a substrate processing method according to a fourth embodiment. [Figure 26] FIG. 10 is a schematic view of a substrate processing unit in a substrate processing apparatus according to a fifth embodiment. [Figure 27] FIG. 10 is a schematic view of a substrate processing unit in a substrate processing apparatus according to a fifth embodiment. [Figure 28] FIG. 10 is a flowchart of a substrate processing method according to a fifth embodiment. [Figure 29] FIG. 11 is a flowchart of a substrate processing method at processing positions Q1 and Q2 according to a fifth embodiment. [Figure 30] 10A and 10B are schematic views for explaining a substrate processing method at a processing position Q1 according to a fifth embodiment. [Figure 31] 10A and 10B are schematic views for explaining a substrate processing method at a processing position Q1 according to a fifth embodiment. [Figure 32] 10A and 10B are schematic views for explaining a substrate processing method at a processing position Q1 according to a fifth embodiment. [Figure 33] 10A and 10B are schematic views for explaining a substrate processing method at a processing position Q1 according to a fifth embodiment. [Figure 34] 10A and 10B are schematic views for explaining a substrate processing method at a processing position Q1 according to a fifth embodiment. [Figure 35] 10A and 10B are schematic views for explaining a substrate processing method at a processing position Q1 according to a fifth embodiment. [Figure 36] 13A and 13B are schematic views for explaining a substrate processing method at the processing position Q2 according to the fifth embodiment. [Figure 37] 13A and 13B are schematic views for explaining a substrate processing method at the processing position Q2 according to the fifth embodiment. [Figure 38]13A and 13B are schematic views for explaining a substrate processing method at the processing position Q2 according to the fifth embodiment. [Figure 39] FIG. 13 is a flowchart of a substrate processing method according to a fifth modified example of the fifth embodiment. [Figure 40] FIG. 13 is a flowchart of a substrate processing method at processing positions Q1 and Q2 according to a fifth modified example. [Figure 41] FIG. 13 is a schematic plan view of a substrate processing unit in a substrate processing apparatus according to a sixth embodiment. [Figure 42] FIG. 13 is a schematic view showing the structure around a cleaning tank in a substrate processing apparatus according to a sixth embodiment. [Figure 43] FIG. 13 is a schematic plan view of a substrate processing unit in a substrate processing apparatus according to a seventh embodiment. [Figure 44] FIG. 13 is a schematic view showing a substrate processing apparatus according to a sixth modified example. [Figure 45] FIG. 13 is a schematic view showing a substrate processing apparatus according to a seventh modified example. [Figure 46] FIG. 13 is a schematic view showing a substrate processing apparatus according to an eighth modified example. [Figure 47] FIG. 13 is a flowchart of a substrate processing method at one processing position according to an eighth modified example. [Figure 48] FIG. 13 is a schematic view showing a substrate processing apparatus according to a ninth modified example. [Figure 49] FIG. 23 is a schematic view showing a substrate processing apparatus according to a tenth modified example. [Figure 50] FIG. 22 is a schematic view showing a substrate processing apparatus according to an eleventh modified example. [Figure 51] FIG. 23 is a schematic view showing a substrate processing apparatus according to a twelfth modified example. [Figure 52] FIG. 23 is a schematic view showing a substrate processing apparatus according to a thirteenth modified example. [Figure 53] FIG. 23 is a schematic view showing a substrate processing apparatus according to a fourteenth modified example. [Figure 54] FIG. 23 is a schematic view showing a substrate processing apparatus according to a fifteenth modified example. [Figure 55] FIG. 23 is a schematic plan view of a substrate processing unit in a substrate processing apparatus according to a sixteenth modification. [Figure 56]FIG. 23 is a schematic plan view of a substrate processing unit in a substrate processing apparatus according to a seventeenth modified example. DETAILED DESCRIPTION OF THE INVENTION

[0026] Hereinafter, an embodiment of a substrate processing apparatus according to the present invention will be described with reference to the drawings. In the drawings, identical or corresponding parts are designated by the same reference numerals, and description thereof will not be repeated. In this specification, to facilitate understanding of the invention, mutually orthogonal X-, Y-, and Z-axes may be described. In this embodiment, the X- and Y-axes are parallel to the horizontal direction, and the Z-axis is parallel to the vertical direction. To facilitate understanding, processing liquid may be hatched in the drawings.

[0027] (First embodiment) A substrate processing apparatus 100 according to a first embodiment of the present invention will be described with reference to Figures 1 to 9. Figure 1 is a schematic plan view of the substrate processing apparatus 100 according to the first embodiment.

[0028] The substrate processing apparatus 100 processes a substrate W. The substrate processing apparatus 100 processes the substrate W by performing at least one of etching, surface treatment, property imparting, treatment film formation, removal of at least a portion of a film, and cleaning on the substrate W.

[0029] The substrate W is used as a semiconductor substrate. The substrate W includes a semiconductor wafer. For example, the substrate W has a substantially circular disk shape. Here, the substrate processing apparatus 100 processes the substrates W one by one.

[0030] 1, the substrate processing apparatus 100 includes a plurality of substrate processing units 10, a plurality of load ports LP, an indexer robot IR, a center robot CR, and a controller 101. The controller 101 controls the indexer robot IR and the center robot CR. The controller 101 includes a control unit 102 and a memory unit 104.

[0031] Each load port LP accommodates a plurality of stacked substrates W. The indexer robot IR transports the substrates W between the load port LP and the center robot CR. The center robot CR transports the substrates W between the indexer robot IR and the substrate processing units 10. Each substrate processing unit 10 discharges a processing liquid onto the substrate W to process the substrate W. The processing liquid includes, for example, a chemical liquid, a rinse liquid, a remover liquid, and / or a water repellent agent.

[0032] Specifically, the substrate processing units 10 form a plurality of towers arranged on both sides in the Y direction across a passage 111 through which the center robot CR passes in a plan view. Each tower includes a plurality of (e.g., three) substrate processing units 10 stacked one above the other.

[0033] The substrate processing apparatus 100 also includes a processing liquid cabinet (not shown) that supplies processing liquid to all of the substrate processing units 10 included in the substrate processing apparatus 100. The processing liquid cabinet has a pump, a nozzle, a filter, and / or a tank for circulating the processing liquid.

[0034] The control device 101 controls various operations of the substrate processing apparatus 100. The control device 101 causes the substrate processing unit 10 to process the substrate W.

[0035] The control device 101 includes a control unit 102 and a storage unit 104. The control unit 102 has a processor. The control unit 102 has, for example, a central processing unit (CPU). Alternatively, the control unit 102 may have a general-purpose computer.

[0036] The memory unit 104 stores data and computer programs. The data includes recipe data. The recipe data includes information indicating a plurality of recipes. Each of the plurality of recipes defines the processing content and processing procedure for the substrate W. The control unit 102 executes the computer program stored in the memory unit 104 to perform substrate processing operations.

[0037] The storage unit 104 includes a main storage device and an auxiliary storage device. The main storage device is, for example, a semiconductor memory. The auxiliary storage device is, for example, a semiconductor memory and / or a hard disk drive. The storage unit 104 may include removable media. The control unit 102 executes computer programs stored in the storage unit 104 to perform substrate processing operations.

[0038] Continuing to refer to Figure 1, the substrate processing unit 10 will be described. As shown in Figure 1, the substrate processing unit 10 includes a chamber 11, a substrate holder 200, a moving mechanism 300 (see Figure 2), and an immersion tank 400.

[0039] The chamber 11 is substantially box-shaped and has an internal space. The chamber 11 accommodates a substrate W. Here, the substrate processing apparatus 100 is a single-wafer type that processes substrates W one by one. The substrate W is accommodated in the chamber 11 and processed therein. The chamber 11 accommodates a substrate holder 200, a moving mechanism 300 (see FIG. 2), and an immersion tank 400. An opening 12 is formed at a predetermined position on the side wall that separates the inside and outside of the chamber 11 (here, the passage 111) of the chamber 11, through which the center robot CR loads and unloads the substrate W. The opening 12 connects the inside of the chamber 11 with the passage 111, and the substrate W is loaded and unloaded through the opening 12. A shutter 13 that opens and closes the opening 12 is provided at a predetermined position on the side wall of the chamber 11. The opening 12 is an example of the "entrance / exit" in the present invention.

[0040] The substrate holding unit 200 holds the substrates W. Specifically, the substrate holding unit 200 holds the substrates W one by one. The substrate holding unit 200 holds the substrates W horizontally with the top surface (front surface) of the substrate W facing upward and the bottom surface (back surface) of the substrate W facing vertically downward. The substrate holding unit 200 also rotates the substrate W while holding it. For example, the top surface (front surface) of the substrate W has a layered structure with a recess formed therein. The detailed structure of the substrate holding unit 200 will be described later.

[0041] The moving mechanism 300 (see FIG. 2) moves the substrate holding part 200. Specifically, the moving mechanism 300 rotates the substrate holding part 200. The moving mechanism 300 rotates the substrate holding part 200 about a rotation axis L200 extending in the vertical direction. The rotation axis L200 may be located inside or outside the substrate holding part 200 in a plan view. In this embodiment, the substrate holding part 200 is formed in a generally rectangular shape in a plan view, having a base end 200a and a tip end 200b. The rotation axis L200 is located at the base end 200a of the substrate holding part 200. The tip end 200b of the substrate holding part 200 is located above the substrate W to hold the substrate W.

[0042] The moving mechanism 300 also moves the substrate holding unit 200 in the vertical direction. That is, the moving mechanism 300 raises and lowers the substrate holding unit 200. The moving mechanism 300 includes, for example, a ball screw mechanism and an electric motor that provides a driving force to the ball screw mechanism. The detailed structure of the moving mechanism 300 will be described later.

[0043] The substrate processing unit 10 has a plurality of processing positions Q for processing substrates W with a processing liquid. The plurality of processing positions Q are provided in the chambers 11. In this embodiment, a plurality of (here, two) processing positions Q are provided in each chamber 11.

[0044] For example, at least one of the plurality of processing positions Q immerses the substrate W in the processing liquid at the processing position Q. In this embodiment, the substrate W is immersed in the processing liquid at each processing position Q. Specifically, the substrate processing unit 10 has an immersion tank 400 disposed at each processing position Q. The immersion tank 400 stores the processing liquid.

[0045] The multiple processing positions Q are located on a concentric circle C200 centered on the pivot axis L200 of the substrate holding unit 200. In other words, the distances from the pivot axis L200 to the multiple processing positions Q are approximately equal. Therefore, by rotating the substrate holding unit 200 about the pivot axis L200, the substrate W can be easily transferred to, for example, a member (here, the immersion tank 400) located at any of the processing positions Q.

[0046] Furthermore, for example, in each chamber 11, the multiple (here, two) processing positions Q include at least two processing positions Q that process the substrate W with the same chemical liquid. In this embodiment, in each chamber 11, all two processing positions Q process the substrate W with the same chemical liquid. Note that in this embodiment, the same chemical liquid means, for example, that the type and / or components of the chemical liquid are the same.

[0047] Furthermore, in this embodiment, the substrate holding part 200 transports at least two substrates W to at least two (here, two) processing positions Q where the substrates W are processed with the same chemical solution, thereby processing a plurality of (here, at least two) substrates W in parallel.

[0048] Furthermore, the openings 12 of the chamber 11 are provided for at least two (here, two) processing positions Q where substrates W are processed with the same chemical solution. Specifically, the chamber 11 has two openings 12. At least two (here, two) shutters 13 are provided, and the number of shutters 13 is the same as the number of openings 12. Each opening 12 is located between the center robot CR and the processing position Q when the center robot CR is placed at a predetermined position (for example, the position shown in FIG. 1).

[0049] In this embodiment, a substrate W is loaded into and unloaded from each opening 12. Specifically, one of the two processing positions Q is designated as processing position Q1, and the other of the two processing positions Q is designated as processing position Q2. One of the two openings 12 is designated as a first opening 12a, and the other of the two openings 12 is designated as a second opening 12b. At this time, a substrate W to be processed at processing position Q1 is loaded into the chamber 11 through the first opening 12a. The substrate W processed at processing position Q1 is unloaded from the chamber 11 through the first opening 12a. A substrate W to be processed at processing position Q2 is loaded into the chamber 11 through the second opening 12b. The substrate W processed at processing position Q2 is unloaded from the chamber 11 through the second opening 12b.

[0050] Next, the substrate processing apparatus 100 of the first embodiment will be described with reference to Fig. 2. Fig. 2 is a block diagram of the substrate processing apparatus 100 of the first embodiment.

[0051] 2, the control device 101 controls various operations of the substrate processing apparatus 100. The control device 101 controls the indexer robot IR, the center robot CR, the substrate holder 200, and the movement mechanism 300. Specifically, the control device 101 controls the indexer robot IR, the center robot CR, the substrate holder 200, and the movement mechanism 300 by transmitting control signals to the indexer robot IR, the center robot CR, the substrate holder 200, and the movement mechanism 300.

[0052] The control unit 102 controls the indexer robot IR to transfer the substrate W by the indexer robot IR.

[0053] The control unit 102 controls the center robot CR to transfer the substrate W by the center robot CR. For example, the center robot CR receives an unprocessed substrate W and carries the substrate W into one of the plurality of chambers 11. The center robot CR also receives a processed substrate W from the chamber 11 and carries the substrate W out.

[0054] The control unit 102 controls the substrate holding unit 200 to control the attachment and detachment of the substrate W, the start of rotation of the substrate W, changing of the rotation speed, and stopping of the rotation of the substrate W. For example, the control unit 102 can control the substrate holding unit 200 to change the rotation speed of the substrate holding unit 200. Specifically, the control unit 102 can change the rotation speed of the substrate W by changing the rotation speed of an electric motor 204 (described later) of the substrate holding unit 200.

[0055] The control unit 102 controls the moving mechanism 300 to change the angular position in the rotation direction of the substrate holding unit 200. For example, the control unit 102 controls the moving mechanism 300 to rotate the substrate holding unit 200 about the rotation axis L200, thereby transferring the substrate W between the center robot CR and the two processing positions Q.

[0056] The control unit 102 also controls the movement mechanism 300 to change the height position of the substrate holding unit 200. For example, the control unit 102 controls the movement mechanism 300 to move the substrate holding unit 200, thereby moving the substrate W between a first height position P1 (see FIG. 7) and a second height position P2 (see FIG. 4). The first height position P1 is the height position of the substrate W when it is transferred between the center robot CR and the substrate holding unit 200. The second height position P2 is the height position of the substrate W when it is immersed in the processing liquid stored in the immersion tank 400. In other words, when the substrate W is located at the first height position P1, it is in a non-immersed state where it is located outside the immersion tank 400. When the substrate W is located at the second height position P2, it is in an immersed state where it is located inside the immersion tank 400 and immersed in the processing liquid.

[0057] Next, a substrate processing method according to the first embodiment will be described with reference to FIG. 3. FIG. 3 is a flow diagram of the substrate processing method according to the first embodiment. The substrate processing method performed by the substrate processing apparatus 100 according to the first embodiment includes steps S101 to S109. Steps S101 to S109 are executed by the control unit 102. In the first embodiment, although not particularly limited, a rinse liquid is used as the processing liquid, and the substrates W are subjected to a rinse process. However, a chemical liquid may also be used as the processing liquid. For ease of understanding, hereinafter, the multiple substrates W may be referred to as the first substrate W1, the second substrate W2, and so on, in the order in which they are loaded into the chamber 11.

[0058] 3, in step S101, the first substrate W1 is loaded into the chamber 11 and held by the substrate holding part 200. Specifically, the control part 102 controls the center robot CR to load the first substrate W1 supported by the arm of the center robot CR into the chamber 11. At this time, the substrate holding part 200 is located at the processing position Q1, and the first substrate W1 is loaded into the chamber 11 through the first opening 12a.

[0059] Then, the control unit 102 controls the center robot CR and the substrate holding unit 200 to transfer the first substrate W1 from the center robot CR to the substrate holding unit 200. As a result, the substrate holding unit 200 holds the first substrate W1.

[0060] Next, in step S102, the first substrate W1 is treated with the treatment liquid. Specifically, the control unit 102 controls the movement mechanism 300 to lower the substrate holding unit 200. As a result, the first substrate W1 is immersed in the treatment liquid previously stored in the immersion tank 400. In other words, the movement mechanism 300 immerses the first substrate W1 in the treatment liquid by moving (lowering) the substrate holding unit 200 while the treatment liquid is stored in the immersion tank 400. In this embodiment, a predetermined amount of treatment liquid is stored in the immersion tank 400 before step S102 is performed.

[0061] At this time, in this embodiment, the transfer mechanism 300 immerses the first substrate W1 in the processing liquid stored in advance in the immersion tank 400 while the substrate holder 200 is rotating the first substrate W1.

[0062] Then, the control unit 102 controls the substrate holding unit 200 to release the first substrate W1 from its hold. Thereafter, the control unit 102 controls the movement mechanism 300 to raise the substrate holding unit 200. At this time, the first substrate W1 is immersed in the processing liquid.

[0063] Next, in step S103, the substrate holding part 200 is rotated. Specifically, the control part 102 controls the moving mechanism 300 to rotate the substrate holding part 200 by a predetermined angle. As a result, the substrate holding part 200 moves to the processing position Q2.

[0064] Next, in step S104, the second substrate W2 is loaded into the chamber 11 and held by the substrate holding part 200. Specifically, the control part 102 controls the center robot CR to load the second substrate W2 supported by the arm of the center robot CR into the chamber 11. At this time, the substrate holding part 200 is located at the processing position Q2, and the second substrate W2 is loaded into the chamber 11 through the second opening 12b.

[0065] Then, the control unit 102 controls the center robot CR and the substrate holding unit 200 to transfer the second substrate W2 from the center robot CR to the substrate holding unit 200. As a result, the substrate holding unit 200 holds the second substrate W2.

[0066] Next, in step S105, the second substrate W2 is treated with the treatment liquid. Specifically, the control unit 102 controls the moving mechanism 300 to lower the substrate holder 200. As a result, the second substrate W2 is immersed in the treatment liquid stored in advance in the immersion tank 400. Therefore, the first substrate W1 and the second substrate W2 are treated in parallel. The method for immersing the second substrate W2 in the treatment liquid is the same as the method for immersing the first substrate W1 in the treatment liquid in step S102.

[0067] Then, the control unit 102 controls the substrate holding unit 200 to release the second substrate W2 from its hold. Thereafter, the control unit 102 controls the movement mechanism 300 to raise the substrate holding unit 200. At this time, the second substrate W2 is immersed in the processing liquid.

[0068] Next, in step S106, the substrate holding part 200 is rotated. Specifically, the control part 102 controls the moving mechanism 300 to rotate the substrate holding part 200 by a predetermined angle in the opposite direction to step S103. As a result, the substrate holding part 200 moves to the processing position Q1.

[0069] Next, in step S107, the first substrate W1 is held by the substrate holding part 200 and carried out to the outside of the chamber 11. Specifically, when a predetermined time has elapsed since the start of processing the first substrate W1 with the processing liquid in step S102, the control part 102 controls the moving mechanism 300 to lower the substrate holding part 200. Then, the control part 102 controls the substrate holding part 200 to hold the first substrate W1. Thereafter, the control part 102 controls the moving mechanism 300 to raise the substrate holding part 200.

[0070] The control unit 102 then controls the center robot CR and the substrate holding unit 200 to transfer the first substrate W1 from the substrate holding unit 200 to the center robot CR. Thereafter, the control unit 102 controls the center robot CR to unload the first substrate W1 supported by the arm of the center robot CR to the outside of the chamber 11. At this time, the substrate holding unit 200 is located at the processing position Q1, and the first substrate W1 is unloaded to the outside of the chamber 11 through the first opening 12a.

[0071] Next, in step S108, the substrate holding part 200 is rotated. Specifically, the control part 102 controls the moving mechanism 300 to rotate the substrate holding part 200 by a predetermined angle in the same direction as in step S103. As a result, the substrate holding part 200 moves to the processing position Q2.

[0072] Next, in step S109, the second substrate W2 is held by the substrate holding part 200 and carried out to the outside of the chamber 11. Specifically, when a predetermined time has elapsed since the start of processing the second substrate W2 with the processing liquid in step S105, the control part 102 controls the moving mechanism 300 to lower the substrate holding part 200. Then, the control part 102 controls the substrate holding part 200 to hold the second substrate W2. Thereafter, the control part 102 controls the moving mechanism 300 to raise the substrate holding part 200.

[0073] The control unit 102 then controls the center robot CR and the substrate holding unit 200 to transfer the second substrate W2 from the substrate holding unit 200 to the center robot CR. Thereafter, the control unit 102 controls the center robot CR to unload the second substrate W2 supported by the arm of the center robot CR to the outside of the chamber 11. At this time, the substrate holding unit 200 is located at the processing position Q2, and the second substrate W2 is unloaded to the outside of the chamber 11 through the second opening 12b.

[0074] In this way, the processing for the first substrate W1 and the second substrate W2 is completed.

[0075] In this embodiment, as described above, there are multiple processing positions Q in one chamber 11. Therefore, it is possible to perform a variety of processes compared to when there is only one processing position Q in one chamber 11. For example, as described above, two substrates W can be processed in parallel. It is also possible, for example, to process one substrate W at multiple processing positions Q.

[0076] The substrate processing apparatus 100 also has a rotation mechanism 320 that moves the substrate holding part 200 between a plurality of processing positions Q within the chamber 11. Therefore, it is possible to reduce the number of substrate holding parts 200 compared to, for example, providing a substrate holding part 200 for each processing position. Furthermore, because the number of substrate holding parts 200 can be reduced, it is possible to prevent the substrate processing apparatus 100 from becoming larger.

[0077] As described above, the substrate processing apparatus 100 also includes an immersion tank 400 that stores a processing liquid and immerses the substrate W in the processing liquid. Therefore, when processing the substrate W with the processing liquid, there is no need to continuously supply the processing liquid to the substrate W, and therefore, even when a long processing time is required, an increase in the amount of processing liquid consumed can be suppressed. Furthermore, since there is no need to continuously supply the processing liquid to the substrate W, even when, for example, processing with the same processing liquid is performed in multiple chambers 11 at the same time, it is possible to suppress overlapping of the timing at which the processing liquid is supplied from the processing liquid cabinet (not shown). Therefore, the amount of liquid delivered per unit time from the processing liquid cabinet can be suppressed from increasing, and the processing liquid cabinet can be made smaller.

[0078] Furthermore, since the substrates W are immersed one by one in the immersion bath 400 for processing, it is possible to prevent particles from adhering (transferring) to one substrate W from another.

[0079] As described above, the plurality of processing positions Q are located on a concentric circle C200 centered on the pivot axis L200. Therefore, the substrate holder 200 can easily move between the plurality of processing positions Q.

[0080] As described above, the plurality of processing positions Q includes at least two (here, two) processing positions Q that process substrates W with the same chemical solution. Therefore, for example, it is possible to perform the same processing on at least two substrates W in parallel.

[0081] Furthermore, as described above, the openings 12 are provided for at least two processing positions Q. Therefore, unlike when one opening 12 is provided for a plurality of processing positions Q, it is possible to prevent the distance from each processing position Q to the opening 12 from becoming long. This reduces the time required to unload the substrate W.

[0082] Furthermore, as described above, the lifting mechanism 310 (moving mechanism 300) immerses the substrate W in the processing liquid by moving the substrate holder 200 when the processing liquid is stored in the immersion tank 400. Therefore, the processing time can be shortened compared to, for example, when the substrate W is placed in the immersion tank 400 when no processing liquid is stored, and then the processing liquid is supplied and stored in the immersion tank 400.

[0083] Furthermore, it is not necessary to replace the processing liquid in the immersion tank 400 every time the substrate W is immersed, which further reduces the consumption of the processing liquid.

[0084] Furthermore, as described above, while the substrate holder 200 is rotating the substrate W, the lifting mechanism 310 (moving mechanism 300) immerses the substrate W in the processing liquid stored in advance in the immersion tank 400. Therefore, air present between the lower surface Wb of the substrate W and the surface of the processing liquid is easily discharged radially outward from the substrate W. This makes it easy to immerse the substrate W in the processing liquid.

[0085] Next, the substrate processing unit 10 in the substrate processing apparatus 100 of the first embodiment will be described with reference to Figures 4 and 5. Figure 4 is a schematic diagram of the substrate processing unit 10 in the substrate processing apparatus 100 of the first embodiment. Figure 5 is a schematic diagram showing the structure around the substrate holding part 200 and the moving mechanism 300 of the substrate processing apparatus 100 of the first embodiment. Note that in Figure 4 and subsequent figures, due to limitations on drawing size, the various supply parts and discharge parts may be entirely drawn inside the chamber 11, but some of the various supply parts and discharge parts are located outside the chamber 11.

[0086] 4, the substrate processing unit 10 of the first embodiment has the processing position Q1 and the processing position Q2, as described above. In this embodiment, the processing position Q1 and the processing position Q2 have the same configuration. Therefore, only one of the processing positions Q will be described, and the description of the other processing position Q will be omitted.

[0087] Specifically, the substrate processing unit 10 includes the chamber 11, substrate holder 200, moving mechanism 300, and immersion tank 400 described above, as well as a blower unit 14, a cup 450, and an immersion tank support 500. For example, one chamber 11, one substrate holder 200, one moving mechanism 300, one blower unit 14, and one immersion tank support 500 are provided for one substrate processing unit 10. Meanwhile, one immersion tank 400 and one cup 450 are provided for one processing position Q. The blower unit 14 and the cup 450 are controlled by the control unit 102.

[0088] The blower unit 14 is disposed at the top or upper portion of the chamber 11. For example, the blower unit 14 is disposed on the ceiling of the chamber 11. The blower unit 14 sends air into the chamber 11. The blower unit 14 includes, for example, a fan filter unit (FFU). A downflow (descending flow) is formed in the chamber 11 by the blower unit 14 and an exhaust device (not shown).

[0089] The immersion tank 400 stores a processing liquid. Specifically, the immersion tank 400 is a container-like tank with an open top, and the processing liquid is stored in an inner space 400a of the immersion tank 400. The immersion tank 400 also accommodates a substrate W. The substrate W is immersed in the processing liquid stored in the immersion tank 400. As a result, the substrate W is processed by the processing liquid.

[0090] The immersion tank 400 has, for example, a substantially circular shape in a plan view. The immersion tank 400 may have a cylindrical shape with a bottom. The immersion tank 400 is supported in a horizontal position by the immersion tank support part 500. The immersion tank 400 may also be installed in a horizontal position on the bottom surface (bottom wall) of the chamber 11. For example, the immersion tank 400 may be made of silicon carbide (SiC) or stainless steel. Alternatively, the immersion tank 400 may be made of aluminum coated with a fluororesin. The fluororesin may include, for example, polytetrafluoroethylene (PTFE).

[0091] As shown in FIG. 5, the immersion tank 400 has a bottom wall 401 and a side wall 402. The bottom wall 401 may have a circular shape in a plan view. The side wall 402 is connected to the bottom wall 401. The side wall 402 may be connected to an end (peripheral edge) of the bottom wall 401. The side wall 402 extends upward from the bottom wall 401. The bottom wall 401 and the side wall 402 form an inner space 400a of the immersion tank 400. In other words, the inner space 400a is a space surrounded by the bottom wall 401 and the side wall 402.

[0092] More specifically, the side wall 402 has an inner circumferential surface 402a, an outer circumferential surface 402b, and an upper surface 402c. The inner circumferential surface 402a forms an inner space 400a. The outer circumferential surface 402b is disposed outside the inner circumferential surface 402a. The upper surface 402c connects the upper end of the inner circumferential surface 402a to the upper end of the outer circumferential surface 402b. The upper surface 402c is inclined downward toward the outside.

[0093] In the first embodiment, a support table 410 is provided on the bottom wall 401 of the immersion tank 400. The support table 410 supports the substrate W. The support table 410 protrudes above the upper surface of the bottom wall 401. The support table 410 is not particularly limited, but may have, for example, a cylindrical shape. Furthermore, a plurality of support tables 410 are provided on the bottom wall 401. The support table 410 and the bottom wall 401 may be integrally formed. In other words, the support table 410 and the bottom wall 401 may be a single member.

[0094] The cup 450 is disposed around the immersion tank 400. In this embodiment, the cup 450 and the immersion tank 400 are integrally formed. In other words, the cup 450 and the immersion tank 400 are a single member.

[0095] The cup 450 is disposed outside the side wall 402 of the immersion tank 400, at a predetermined distance from the side wall 402. Specifically, the cup 450 has a bottom wall 451 and a side wall 452. The bottom wall 451 is connected to the bottom wall 401 or the side wall 402 of the immersion tank 400. The side wall 452 is connected to the peripheral edge of the bottom wall 451. The side wall 452 has a lower wall portion 452a and an upper wall portion 452b. The lower wall portion 452a extends upward from the bottom wall 451. The upper wall portion 452b slopes inward and upward from the upper end of the lower wall portion 452a. The bottom wall 451 and side wall 452 of the cup 450, together with the side wall 402 of the immersion tank 400, form an inner space 450a of the cup 450.

[0096] The cup 450 collects the processing liquid scattered around the substrate W due to, for example, the rotation of the substrate W. In addition, an exhaust device (not shown) may be connected to the cup 450, and the gas in the inner space 450a may be exhausted to the outside of the chamber 11.

[0097] The immersion tank support unit 500 supports the immersion tank 400. In this embodiment, the immersion tank support unit 500 supports the immersion tank 400 and the cup 450. The immersion tank support unit 500 has a support plate 502. The support plate 502 has a plate shape and is arranged in a horizontal position. The support plate 502 may be fixed, for example, to the side wall of the chamber 11 or to the upper surface of a support column or the like of the immersion tank support unit 500. In this embodiment, the support plate 502 is fixed to the side wall of the chamber 11 and divides the interior of the chamber 11 into an upper space and a lower space. The support plate 502 supports the immersion tank 400 in a horizontal position. A through hole 502a is formed at a predetermined position of the support plate 502, penetrating the support plate 502 in the thickness direction. A screw shaft 311 (described later) of the movement mechanism 300 is inserted into the through hole 502a.

[0098] 4, the substrate processing apparatus 100 has a first supply unit 30, a second supply unit 40, a first discharge unit 50, and a second discharge unit 60. The first supply unit 30, the second supply unit 40, the first discharge unit 50, and the second discharge unit 60 are controlled by a control unit 102. The first supply unit 30 and the second supply unit 40 are examples of the "processing liquid supply unit" in the present invention.

[0099] The first supply unit 30 supplies the processing liquid to the immersion tank 400. The first supply unit 30 supplies the processing liquid from above the immersion tank 400. In this embodiment, the first supply unit 30 is capable of ejecting the processing liquid toward the upper surface Wa of the substrate W held by the substrate holding unit 200.

[0100] Specifically, first supply unit 30 has first chemical liquid pipe 31, second chemical liquid pipe 32, rinse liquid pipe 33, common pipe , on-off valve 35, on-off valve , on-off valve 37, and nozzle .

[0101] First chemical liquid pipe 31, second chemical liquid pipe 32, rinse liquid pipe 33, and common pipe 34 are tubular members through which the processing liquid flows.

[0102] The first chemical liquid is supplied from a supply source to first chemical liquid piping 31. The downstream end of first chemical liquid piping 31 is connected to common piping 34. Opening / closing valve 35 is provided in first chemical liquid piping 31 and opens and closes the flow path within first chemical liquid piping 31. Opening / closing valve 35 adjusts the opening degree of first chemical liquid piping 31 to adjust the flow rate of the first chemical liquid supplied to first chemical liquid piping 31.

[0103] The first chemical liquid is not particularly limited, but may include, for example, phosphoric acid, SPM (sulfuric acid / hydrogen peroxide mixture), or ozone water. SPM is a sulfuric acid / hydrogen peroxide mixture in which sulfuric acid and hydrogen peroxide are mixed. In this embodiment, the first chemical liquid is phosphoric acid. The first chemical liquid may be, for example, SC1 (a mixture of ammonia water, hydrogen peroxide, and water), or an organic solvent.

[0104] The second chemical liquid is supplied from a supply source to second chemical liquid pipe 32. The downstream end of second chemical liquid pipe 32 is connected to common pipe 34. Opening / closing valve 36 is provided in second chemical liquid pipe 32 and opens and closes the flow path within second chemical liquid pipe 32. Opening / closing valve 36 adjusts the opening degree of second chemical liquid pipe 32 to adjust the flow rate of the second chemical liquid supplied to second chemical liquid pipe 32.

[0105] The second chemical liquid is not particularly limited, but may include, for example, DHF (dilute hydrofluoric acid), phosphoric acid, SPM (sulfuric acid / hydrogen peroxide mixture), or ozone water. In this embodiment, the second chemical liquid is phosphoric acid or DHF (dilute hydrofluoric acid) having a concentration different from that of the first chemical liquid. The second chemical liquid may be, for example, SC1 (a mixture of ammonia water, hydrogen peroxide, and water), or an organic solvent.

[0106] A rinse liquid is supplied from a supply source to the rinse liquid pipe 33. The downstream end of the rinse liquid pipe 33 is connected to a common pipe 34. An on-off valve 37 is provided in the rinse liquid pipe 33 and opens and closes the flow path in the rinse liquid pipe 33. The on-off valve 37 adjusts the opening of the rinse liquid pipe 33 to adjust the flow rate of the rinse liquid supplied to the rinse liquid pipe 33.

[0107] Examples of the rinse liquid include deionized water (DIW), carbonated water, electrolytic ionized water, ozone water, ammonia water, diluted hydrochloric acid water (for example, about 10 ppm to 100 ppm), and reduced water (hydrogen water). In this embodiment, the rinse liquid is deionized water (DIW).

[0108] Each of the opening / closing valves 35 to 37 includes a valve body (not shown) having a valve seat provided therein, a valve element that opens and closes the valve seat, and an actuator (not shown) that moves the valve element between an open position and a closed position.

[0109] The downstream end of the common pipe is connected to the nozzle 38. The common pipe distributes the processing liquid to the nozzle .

[0110] The nozzle 38 discharges the processing liquid. In this embodiment, the nozzle 38 discharges the processing liquid toward the upper surface Wa of the substrate W held by the substrate holding unit 200. The nozzle 38 can also discharge the processing liquid into the immersion bath 400 when the substrate holding unit 200 is not holding a substrate W. The nozzle 38 is provided on a spin base 201 (described later) of the substrate holding unit 200. The nozzle 38 is disposed, for example, in the center of the spin base 201. In this embodiment, the nozzle 38 is disposed on the rotation axis AX1 of the spin base 201. The nozzle 38 may be formed separately from the spin base 201 or may be formed as part of the spin base 201. In addition, when the nozzle 38 is formed separately from the spin base 201, for example, a through-hole extending in the vertical direction may be formed in the center of the spin base 201, and the nozzle 38 may be disposed in the through-hole of the spin base 201. In this case, the nozzle 38 may be fixed to the housing 205.

[0111] The second supply unit 40 supplies the processing liquid to the immersion tank 400. The second supply unit 40 supplies the processing liquid from below the immersion tank 400. In this embodiment, the second supply unit 40 is capable of ejecting the processing liquid toward the lower surface Wb of the substrate W held by the substrate holding unit 200.

[0112] Specifically, second supply unit 40 has first chemical liquid pipe 41, second chemical liquid pipe 42, rinse liquid pipe 43, common pipe 44, on-off valve 45, on-off valve 46, on-off valve 47, and nozzle 48.

[0113] First chemical liquid pipe 41, second chemical liquid pipe 42, rinse liquid pipe 43, and common pipe 44 are annular members through which the processing liquid flows.

[0114] The first chemical liquid is supplied from a supply source to first chemical liquid pipe 41. The downstream end of first chemical liquid pipe 41 is connected to common pipe 44. Opening / closing valve 45 is provided in first chemical liquid pipe 41 and opens and closes the flow path within first chemical liquid pipe 41. Opening / closing valve 45 adjusts the opening degree of first chemical liquid pipe 41 to adjust the flow rate of the first chemical liquid supplied to first chemical liquid pipe 41.

[0115] The second chemical liquid is supplied from a supply source to second chemical liquid pipe 42. The downstream end of second chemical liquid pipe 42 is connected to common pipe 44. Opening / closing valve 46 is provided in second chemical liquid pipe 42 and opens and closes the flow path within second chemical liquid pipe 42. Opening / closing valve 46 adjusts the opening degree of second chemical liquid pipe 42 to adjust the flow rate of the second chemical liquid supplied to second chemical liquid pipe 42.

[0116] A rinse liquid is supplied from a supply source to the rinse liquid pipe 43. The downstream end of the rinse liquid pipe 43 is connected to a common pipe 44. An open / close valve 47 is provided in the rinse liquid pipe 43 and opens and closes the flow path in the rinse liquid pipe 43. The open / close valve 47 adjusts the opening of the rinse liquid pipe 43 to adjust the flow rate of the rinse liquid supplied to the rinse liquid pipe 43.

[0117] Each of the opening / closing valves 45 to 47 includes a valve body (not shown) having a valve seat provided therein, a valve element that opens and closes the valve seat, and an actuator (not shown) that moves the valve element between an open position and a closed position.

[0118] The downstream end of the common pipe 44 is connected to the nozzle 48. The common pipe 44 distributes the processing liquid to the nozzle 48.

[0119] The nozzle 48 ejects the processing liquid. In this embodiment, the nozzle 48 ejects the processing liquid toward the lower surface Wb of the substrate W held by the substrate holding part 200. The nozzle 48 can also eject the processing liquid into the immersion tank 400 when the substrate holding part 200 is not holding the substrate W. The nozzle 48 is disposed in the center of the immersion tank 400. The tip (upper end) of the nozzle 48 protrudes upward from the upper surface of the bottom wall 401 of the immersion tank 400. The nozzle 48 may be formed separately from the immersion tank 400, or may be formed as part of the immersion tank 400.

[0120] The first discharge unit 50 discharges the treatment liquid stored in the immersion tank 400 to the outside of the immersion tank 400. In this embodiment, the first discharge unit 50 discharges the treatment liquid stored in the immersion tank 400 to the outside of the chamber 11.

[0121] Specifically, the first discharge unit 50 has a common pipe 51, a drainage pipe 52, a return pipe 53, an on-off valve 54, and an on-off valve 55. The common pipe 51, the drainage pipe 52, and the return pipe 53 are tubular members through which the treatment liquid flows.

[0122] The upstream end of the common pipe 51 is connected to the bottom wall 401 of the immersion tank 400. The common pipe 51 is in communication with the inner space 400a of the immersion tank 400. The processing liquid of the immersion tank 400 flows into the common pipe 51. The downstream end of the common pipe 51 is connected to a drain pipe 52 and a return pipe 53.

[0123] The drainage pipe 52 drains the processing liquid from the common pipe 51. For example, the drainage pipe 52 circulates the processing liquid from the common pipe 51 to a drain tank (not shown). The opening / closing valve 54 is provided in the drainage pipe 52 and opens and closes the flow path in the drainage pipe 52.

[0124] The return pipe 53 returns the processing liquid from the common pipe 51 to a processing liquid cabinet (not shown) provided in the substrate processing apparatus 100. The processing liquid returned to the processing liquid cabinet is reused. This reduces the amount of processing liquid used, thereby reducing the environmental impact. The opening / closing valve 55 is provided in the return pipe 53 and opens and closes the flow path in the return pipe 53.

[0125] In addition, each of the opening / closing valves 54 and 55 includes a valve body (not shown) having a valve seat provided therein, a valve element that opens and closes the valve seat, and an actuator (not shown) that moves the valve element between an open position and a closed position.

[0126] The second discharge unit 60 discharges the processing liquid in the cup 450 to the outside of the cup 450. In this embodiment, the second discharge unit 60 discharges the processing liquid in the cup 450 to the outside of the chamber 11.

[0127] Specifically, the second discharge unit 60 has a drainage pipe 61 and an on-off valve 62. The drainage pipe 61 is a tubular member through which the treatment liquid flows.

[0128] The drainage pipe 61 drains the processing liquid inside the cup 450. Specifically, the upstream end of the drainage pipe 61 is connected to the bottom wall 451 of the cup 450. The drainage pipe 61 is in communication with the inner space 450a of the cup 450. The processing liquid inside the cup 450 flows into the drainage pipe 61. For example, the drainage pipe 61 distributes the processing liquid to a drain tank (not shown). The opening / closing valve 62 is provided in the drainage pipe 61 and opens and closes a flow path inside the drainage pipe 61. The opening / closing valve 62 includes a valve body (not shown) having a valve seat provided therein, a valve element that opens and closes the valve seat, and an actuator (not shown) that moves the valve element between an open position and a closed position.

[0129] Next, the substrate holder 200 and the moving mechanism 300 will be further described with reference to FIG.

[0130] 5, the substrate holding unit 200 includes a spin base 201, a chuck pin 202, a shaft 203, an electric motor 204, and a housing 205. The spin base 201 is an example of the "base" in the present invention.

[0131] The chuck pins 202 are provided on a spin base 201 disposed above the substrate W. The chuck pins 202 chuck the substrate W. Typically, a plurality of chuck pins 202 are provided on the spin base 201. The chuck pins 202 protrude downward from the lower surface of the spin base 201. The chuck pins 202 have a pin-shaped portion extending in the vertical direction and a contact portion provided at the lower end of the pin-shaped portion and contacting the peripheral edge of the substrate W. Each chuck pin 202 is rotatable about a rotation axis AX2 (the central axis of each pin-shaped portion) extending in the vertical direction. The chuck pins 202 rotate about the rotation axis AX2 between a holding position where the substrate W is held and a non-holding position where the substrate W is not held.

[0132] The shaft 203 is a hollow shaft. The shaft 203 extends vertically along the rotation axis AX1. The spin base 201 is coupled to the lower end of the shaft 203. The substrate W is located below the spin base 201.

[0133] The spin base 201 is disk-shaped and supports the substrate W horizontally. The shaft 203 extends upward from the center of the spin base 201. The electric motor 204 applies a rotational force to the shaft 203. The electric motor 204 rotates the shaft 203 in a rotational direction, thereby rotating the substrate W and the spin base 201 around the rotation axis AX1. The housing 205 is substantially box-shaped and accommodates a portion of the shaft 203 and the electric motor 204. The electric motor 204 is attached to a predetermined position in the housing 205.

[0134] The substrate holder 200 also has a chuck drive mechanism 210 that rotates the multiple chuck pins 202. The chuck drive mechanism 210 is configured using known technology (for example, JP 2016-25186 A), and will therefore only be briefly described.

[0135] The chuck drive mechanism 210 includes a drive magnet 211, a driven magnet 212, and a lift plate 213. The drive magnet 211 is disposed within the housing 205. The drive magnet 211 is disposed around one circumference of the rotation axis AX1. The drive magnet 211 moves up and down relative to the housing 205 by a lift mechanism (not shown). The driven magnet 212 and the lift plate 213 are disposed within the spin base 201. The driven magnet 212 is fixed to the lift plate 213. The lift plate 213 is biased upward by a biasing member (not shown). The driven magnet 212 and the lift plate 213 are disposed around one circumference of the rotation axis AX1. The driven magnet 212 is disposed directly below the drive magnet 211. The lift plate 213 is provided with a cam or link mechanism that rotates the chuck pin 202 between a holding position and a non-holding position. As the drive magnet 211 moves up and down, the driven magnet 212 and the lifting plate 213 move up and down. As a result, the chuck pins 202 rotate between the holding position and the non-holding position, and the substrate W is held by the chuck pins 202 or the holding thereof is released.

[0136] The moving mechanism 300 includes a lifting mechanism 310 that moves the substrate holding part 200 in the vertical direction, and a turning mechanism 320 that turns the substrate holding part 200. The lifting mechanism 310 includes, for example, a screw shaft 311, a nut 312, an electric motor 313, and a drive belt 314.

[0137] The screw shaft 311 and the nut 312 constitute a ball screw mechanism. The screw shaft 311 extends vertically. The upper end of the screw shaft 311 is fixed to the housing 205 of the substrate holder 200. A screw groove is formed on the outer circumferential surface of the screw shaft 311.

[0138] The nut 312 has balls that come into contact with the thread groove of the screw shaft 311. The screw shaft 311 moves in the vertical direction as the nut 312 rotates about the central axis AX3 of the screw shaft 311. In this embodiment, the central axis AX3 coincides with the rotation axis L200.

[0139] The electric motor 313 has, for example, a motor body 313a, a motor shaft 313b, and a motor pulley 313c. The motor body 313a is fixed to a motor support member 321 (described later) of the turning mechanism 320. The motor pulley 313c is fixed to the tip of the motor shaft 313b.

[0140] The drive belt 314 is wound around the outer circumferential surfaces of the motor pulley 313c and the nut 312. The drive belt 314 transmits the rotational force of the motor pulley 313c to the nut 312. As a result, when the motor pulley 313c rotates, the nut 312 rotates. The screw shaft 311 is configured not to move in the horizontal direction.

[0141] In this movement mechanism 300, when the electric motor 313 of the lifting mechanism 310 is driven, the driving force of the electric motor 313 is transmitted to the nut 312 via the drive belt 314. Then, as the nut 312 rotates, the screw shaft 311 moves up and down in the vertical direction.

[0142] The turning mechanism 320 includes, for example, a motor support member 321 , an electric motor 322 , and a drive belt 323 .

[0143] The motor support member 321 supports the electric motor 313 of the lifting mechanism 310. The motor support member 321 has a support plate 321a and a pulley 321b fixed to the support plate 321a. The screw shaft 311 is inserted through the center of the pulley 321b. The motor support member 321 rotates (orbits) together with the electric motor 313 about the central axis AX3 of the screw shaft 311.

[0144] The electric motor 322 has, for example, a motor body 322a, a motor shaft 322b, and a motor pulley 322c. The motor body 322a is fixed to the support plate 502. The motor pulley 322c is fixed to the tip of the motor shaft 322b.

[0145] The drive belt 323 is wound around the motor pulley 322c and the pulley 321b of the motor support member 321. The drive belt 323 transmits the rotational force of the motor pulley 322c to the motor support member 321. As a result, when the motor pulley 322c rotates, the motor support member 321 rotates about the central axis AX3 (rotation axis L200).

[0146] In this moving mechanism 300, when the electric motor 322 is driven, the driving force of the electric motor 322 is transmitted to the motor support member 321 via the drive belt 323. Then, as the motor support member 321 rotates, the lifting mechanism 310 and the substrate holding part 200 rotate about the central axis AX3 (rotation axis L200).

[0147] Furthermore, movement mechanism 300 has shaft cover 330. Shaft cover 330 has bellows portion 330a that is expandable and contractible in the vertical direction, upper plate 330b that attaches the upper end of bellows portion 330a to housing 205 of substrate holding unit 200, and lower plate 330c that attaches the lower end of bellows portion 330a to support plate 502.

[0148] Next, a substrate processing method at one processing position Q according to the first embodiment will be described with reference to FIGS. 6 to 9. FIG. 6 is a flow diagram of the substrate processing method at one processing position Q according to the first embodiment. FIGS. 7 to 9 are schematic diagrams for explaining the substrate processing method at one processing position Q according to the first embodiment. The substrate processing method at one processing position Q of the substrate processing apparatus 100 according to the first embodiment includes steps S201 to S208. Steps S201 to S208 are executed by the control unit 102. Note that steps S201 and S202 correspond to, for example, step S101 above. Steps S203 and S204 correspond to, for example, step S102 above. Steps S205 to S208 correspond to, for example, step S107 above.

[0149] As shown in Fig. 6, in step S201, the substrate W is loaded into the chamber 11. Specifically, as shown in Fig. 7, the control unit 102 controls the center robot CR to load the substrate W supported by the arm of the center robot CR into the chamber 11. At this time, the substrate holder 200 is retracted to a height higher than the height position when transferring the substrate W. Note that the opening and closing valves 35 to 37, 45 to 47, 54, and 55 are in a closed state, and the opening and closing valve 62 is in an open state.

[0150] Next, in step S202, the substrate W is held. Specifically, the control unit 102 controls the movement mechanism 300 to move the substrate holding unit 200. Specifically, the control unit 102 controls the movement mechanism 300 to move (lower) the substrate holding unit 200 to a height position when the substrate W is transferred between the substrate holding unit 200 and the center robot CR.

[0151] Then, the control unit 102 controls the substrate holding unit 200 to hold the substrate W by the chuck pins 202. As a result, the substrate holding unit 200 rotatably holds the substrate W. At this time, the substrate W is located at the first height position P1. In other words, the substrate W is located outside the immersion tank 400 and is in a non-immersed state.

[0152] Next, in step S203, the substrate W is immersed in the processing liquid. Specifically, the control unit 102 controls the center robot CR to move the arm of the center robot CR to the outside of the chamber 11.

[0153] 8, the control unit 102 controls the moving mechanism 300 to move (lower) the substrate holder 200, thereby moving (lowering) the substrate W from the first height position P1 to the second height position P2. As a result, the substrate W is placed in the inner space 400a of the immersion tank 400. In this embodiment, a predetermined amount of processing liquid is stored in the immersion tank 400 before step S203 is performed.

[0154] At this time, in this embodiment, the transfer mechanism 300 immerses the first substrate W1 in the processing liquid stored in advance in the immersion tank 400 while the substrate holder 200 is rotating the first substrate W1.

[0155] At this time, while at least one of the first supply unit 30 and the second supply unit 40 supplies the processing liquid toward the first substrate W1, the movement mechanism 300 immerses the first substrate W1 in the processing liquid stored in advance in the immersion tank 400. In this embodiment, while both the first supply unit 30 and the second supply unit 40 supply the processing liquid toward the substrate W, the movement mechanism 300 immerses the first substrate W1 in the processing liquid stored in advance in the immersion tank 400. In step S102, it is preferable that at least the second supply unit 40 supplies the processing liquid toward the first substrate W1.

[0156] Thereafter, the control unit 102 controls the substrate holder 200 to release the substrate W from the chuck pins 202. As a result, the substrate W is supported by the plurality of support stages 410 in the immersion tank 400.

[0157] Next, in step S204, the substrate holding part 200 is raised. Specifically, as shown in Fig. 9, the control part 102 controls the movement mechanism 300 to move (raise) the substrate holding part 200. This makes the substrate holding part 200 rotatable.

[0158] Next, in step S205, the control unit 102 lowers the substrate holding unit 200. Specifically, the control unit 102 controls the movement mechanism 300 to move (lower) the substrate holding unit 200.

[0159] Next, in step S206, the substrate W is held and raised. Specifically, as shown in Fig. 8, the control unit 102 controls the substrate holding unit 200 to hold the substrate W with the chuck pins 202. Then, the control unit 102 controls the moving mechanism 300 to move (raise) the substrate holding unit 200. As a result, the substrate W becomes non-immersed.

[0160] Next, in step S207, the substrate W is dried as necessary. Specifically, the control unit 102 controls the substrate holder 200 to rotate the substrate W around the rotation axis AX1 by the chuck pins 202. This dries the substrate W. The rotation speed of the substrate W is not particularly limited, but is, for example, 1500 rpm to 2000 rpm or higher.

[0161] Next, in step S208, the substrate W is unloaded outside the chamber 11. Specifically, as shown in Fig. 7, the control unit 102 controls the substrate holding unit 200 and the center robot CR to release the substrate W from the substrate holding unit 200 and place the substrate W on the arm of the center robot CR. Then, the control unit 102 controls the center robot CR to unload the substrate W supported by the arm of the center robot CR outside the chamber 11.

[0162] In this way, the processing of the substrate W is completed at one processing position Q. Although the present embodiment has been described as an example in which the substrate W is dried in step S207, the substrate W does not necessarily have to be dried.

[0163] In this embodiment, as described above, the immersion tank 400 is provided with a support table 410 that supports the substrate W. Therefore, by placing the substrate W on the support table 410, the substrate holding part 200 does not need to continue to hold the substrate W during processing. Therefore, the substrate holding part 200 can move to, for example, another processing position Q to hold or transport another substrate W.

[0164] As described above, the substrate holding unit 200 has the spin base 201 disposed above the substrate W and a plurality of chuck pins 202 that protrude downward from the spin base 201 and hold the periphery of the substrate W. Therefore, the substrate W can be held from above, and the substrate W can be easily immersed in the processing liquid in the immersion tank 400.

[0165] Furthermore, as described above, while the second supply unit 40 is supplying the processing liquid toward the substrate W, the lifting mechanism 310 (moving mechanism 300) immerses the substrate W in the processing liquid stored in advance in the immersion tank 400. Therefore, air present between the lower surface Wb of the substrate W and the surface of the processing liquid is easily discharged radially outward from the substrate W by the processing liquid supplied from the second supply unit 40. This makes it easier to immerse the substrate W in the processing liquid.

[0166] Furthermore, while the first supply unit 30 is supplying the processing liquid toward the substrate W, the lifting mechanism 310 (moving mechanism 300) immerses the substrate W in the processing liquid previously stored in the immersion tank 400. Therefore, the upper surface Wa of the substrate W is wetted with the processing liquid supplied from the first supply unit 30, and the processing liquid stored in the immersion tank 400 is more likely to flow onto the upper surface Wa of the substrate W. Furthermore, since the timing at which the processing liquid comes into contact with the upper surface Wa of the substrate W (the timing at which processing begins) is earlier, the takt time can be shortened.

[0167] Furthermore, the first supply unit 30 has a nozzle 38 that ejects the processing liquid toward the upper surface Wa of the substrate W, and the nozzle 38 is provided on the spin base 201. Therefore, in a configuration in which the spin base 201 is provided above the substrate W, the processing liquid can be easily ejected onto the upper surface Wa of the substrate W.

[0168] Furthermore, the substrate holder 200 rotates the substrate W by rotating the spin base 201, and the nozzle 38 is disposed at the center of the spin base 201. Therefore, even when the spin base 201 rotates, for example, it is possible to prevent the nozzle 38 from moving (rotating) around the rotation axis AX1.

[0169] (First Modification) Next, a substrate processing apparatus 100 according to a first modified example of the first embodiment of the present invention will be described with reference to Figures 10 and 11. Figure 10 is a flow diagram of a substrate processing method for the substrate processing apparatus 100 of the first modified example. Unlike the first embodiment, the first modified example describes an example in which multiple processes are performed on a substrate W at one processing position Q. The structure of the substrate processing apparatus 100 of the first modified example is the same as that of the first embodiment.

[0170] The substrate processing method of the first modified example will be described with reference to Fig. 10. The substrate processing method by the substrate processing apparatus 100 of the first modified example includes steps S101 to S106, S301 to S303, S108, and S304 to S306. Steps S101 to S106, S301 to S303, S108, and S304 to S306 are executed by the control unit 102.

[0171] As shown in FIG. 10, steps S101 to S106 are executed in the same manner as in the first embodiment.

[0172] Next, in step S301, the first substrate W1 is held by the substrate holding part 200. Specifically, the control part 102 controls the moving mechanism 300 to lower the substrate holding part 200. Then, the control part 102 controls the substrate holding part 200 to hold the first substrate W1.

[0173] Next, in step S302, the first substrate W1 is treated with a treatment liquid (here, a rinse liquid). Specifically, the control unit 102 controls the first supply unit 30 and the second supply unit 40 to supply the treatment liquid to the first substrate W1. As a result, the first substrate W1 is rinsed.

[0174] Next, in step S303, the first substrate W1 is carried out to the outside of the chamber 11. Specifically, the control unit 102 controls the moving mechanism 300 to raise the substrate holder 200.

[0175] Then, in the same manner as in step S107, the control unit 102 controls the center robot CR and the substrate holding unit 200 to transfer the first substrate W1 from the substrate holding unit 200 to the center robot CR, and then transports the first substrate W1 outside the chamber 11.

[0176] Next, step S108 is executed in the same manner as in the first embodiment.

[0177] Next, in step S304, the second substrate W2 is held by the substrate holding part 200. Specifically, the control part 102 controls the moving mechanism 300 to lower the substrate holding part 200. Then, the control part 102 controls the substrate holding part 200 to hold the second substrate W2.

[0178] Next, in step S305, the second substrate W2 is treated with a treatment liquid (here, a rinse liquid). Specifically, the control unit 102 controls the first supply unit 30 and the second supply unit 40 to supply the treatment liquid to the second substrate W2. As a result, the second substrate W2 is rinsed.

[0179] Next, in step S306, the second substrate W2 is carried out to the outside of the chamber 11. Specifically, the control unit 102 controls the moving mechanism 300 to raise the substrate holder 200.

[0180] Then, in the same manner as in step S109, the control unit 102 controls the center robot CR and the substrate holding unit 200 to transfer the second substrate W2 from the substrate holding unit 200 to the center robot CR, and then transports the second substrate W2 outside the chamber 11.

[0181] Other aspects of the substrate processing method of the first modified example are similar to those of the first embodiment.

[0182] Next, a substrate processing method at one processing position Q according to the first modified example will be described with reference to Fig. 11. Fig. 11 is a flow chart of the substrate processing method at one processing position Q according to the first modified example. The substrate processing method at one processing position Q of the substrate processing apparatus 100 according to the first modified example includes steps S201 to S205, S401 to S404, and S208.

[0183] As shown in FIG. 11, steps S201 to S205 are executed in the same manner as in the first embodiment.

[0184] Next, in step S401, the substrate W is held. Specifically, the control unit 102 controls the substrate holding unit 200 to hold the substrate W by the chuck pins 202, as shown in FIG.

[0185] Next, in step S402, the substrate W is rinsed. Specifically, the control unit 102 controls the first supply unit 30 and the second supply unit 40 to discharge a rinse liquid toward the substrate W. At this time, the control unit 102 preferably controls the moving mechanism 300 to move (raise) the substrate holder 200, thereby separating the substrate W from the support table 410. Note that in step S402, the control unit 102 may switch the opening / closing valve 54 of the first discharge unit 50 from a closed state to an open state, thereby draining the processing liquid in the immersion tank 400. Alternatively, the chemical liquid in the immersion tank 400 may be replaced with the rinse liquid by discharging the rinse liquid while keeping the opening / closing valve 54 of the first discharge unit 50 closed.

[0186] Next, in step S403, the control unit 102 controls the substrate holder 200 to start rotating the substrate W.

[0187] Next, in step S404, the substrate W is dried. Specifically, the control unit 102 controls the first supply unit 30 and the second supply unit 40 to stop the discharge of the rinse liquid. As a result, the substrate W rotates without the rinse liquid being discharged, so that the rinse liquid is discharged from the substrate W and the substrate W is dried. The rotation speed of the substrate W is not particularly limited, but is, for example, 1500 rpm to 2000 rpm or higher.

[0188] Next, step S208 is executed in the same manner as in the first embodiment.

[0189] In this manner, the processing of the substrate W at one processing position Q is completed.

[0190] Other substrate processing methods at one processing position Q in the first modified example are similar to those in the first embodiment.

[0191] In the first modified example, as described above, a plurality of processes are performed on a substrate W at one processing position Q. Therefore, since a plurality of processes can be performed in a small space, an increase in the size of the substrate processing apparatus 100 can be prevented.

[0192] (Second embodiment) Next, a substrate processing apparatus 100 according to a second embodiment of the present invention will be described with reference to Figures 12 and 13. Figure 12 is a schematic plan view of the substrate processing apparatus 100 according to the second embodiment. In the second embodiment, unlike the first embodiment and the like, an example will be described in which a transfer table 150 is provided in the chamber 11. In this specification, "embodiments" refers to embodiments and modified examples.

[0193] 12, the substrate processing unit 10 has a transfer table 150. The transfer table 150 is a table for transferring the substrate W between the center robot CR and the substrate holder 200. The transfer table 150 supports the substrate W. The transfer table 150 is an example of the "support member" in the present invention.

[0194] Specifically, the transfer table 150 has a circular plate 150a and multiple (four in this example) protrusions 150b protruding upward from the plate 150a. The multiple protrusions 150b support the lower surface Wb of the substrate W. The multiple protrusions 150b are arranged, for example, on the periphery of the plate 150a at equal angular intervals (90° in this example) around the center of the plate 150a.

[0195] The substrate processing unit 10 has a plurality of processing positions Q and a transfer position R. The transfer position R is provided in the chamber 11. In this embodiment, each chamber 11 is provided with a plurality of (here, four) processing positions Q and one transfer position R. The transfer table 150 is disposed at the transfer position R. The transfer position R is an example of the "support position" in the present invention.

[0196] The processing positions Q and the transfer position R are located on a concentric circle C200. Therefore, by rotating about the rotation axis L200, the substrate holder 200 can easily transfer the substrate W to, for example, any member (here, the immersion tank 400) at any processing position Q and the transfer table 150 at the transfer position R.

[0197] In this embodiment, in each chamber 11, all four processing positions Q process the substrates W with the same chemical liquid.

[0198] In this embodiment, an opening 12 of the chamber 11 is provided for each transfer position R. That is, one opening 12 is provided for one transfer position R. Specifically, the chamber 11 has one opening 12. One shutter 13 is provided. The opening 12 is located between the center robot CR and the transfer position R when the center robot CR is placed in a predetermined position (for example, the position shown in FIG. 12).

[0199] In this embodiment, the substrates W to be processed at any of the processing positions Q are carried into the chamber 11 through the same opening 12. The substrates W processed at any of the processing positions Q are carried out of the chamber 11 through the same opening 12.

[0200] Other structures of the second embodiment are similar to those of the first embodiment.

[0201] Next, a substrate processing method according to a second embodiment will be described with reference to Fig. 13. Fig. 13 is a flow diagram of the substrate processing method according to the second embodiment. The substrate processing method by the substrate processing apparatus 100 according to the second embodiment includes steps S501 to S503, S102, S504 to S506, S105, and S507 to S513. In the second embodiment, similar to the first embodiment, a rinse liquid is used as the processing liquid, and the substrate W is subjected to a rinse process. However, a chemical liquid may be used as the processing liquid, or, similar to the first modified example, a chemical liquid and a rinse liquid may be used as the processing liquid.

[0202] 13, in step S501, the first substrate W1 is loaded into the chamber 11. Specifically, the control unit 102 controls the center robot CR to load the first substrate W1 into the chamber 11 and place it on the transfer table 150, and then causes the arm to retreat from the transfer position R. At this time, the substrate holder 200 is located at a position other than the transfer position R. Also, at this time, the first substrate W1 is loaded into the chamber 11 through the opening 12.

[0203] Next, in step S502, the control unit 102 controls the moving mechanism 300 to rotate the substrate holding unit 200 to the transfer position R. Then, the control unit 102 controls the moving mechanism 300 and the substrate holding unit 200 to cause the substrate holding unit 200 to hold the first substrate W1.

[0204] Next, in step S503, the control unit 102 controls the moving mechanism 300 to rotate the substrate holder 200 to, for example, the processing position Q1.

[0205] Next, step S102 is executed in the same manner as in the first embodiment.

[0206] In step S504, the second substrate W2 is carried into the chamber 11. Specifically, the control unit 102 controls the center robot CR to carry the second substrate W2 into the chamber 11 and place it on the transfer table 150, and then causes the arm to retreat from the transfer position R. At this time, the second substrate W2 is carried into the chamber 11 through the opening 12.

[0207] Next, in step S505, the control unit 102 controls the moving mechanism 300 to rotate the substrate holding unit 200 to the transfer position R. Then, the control unit 102 controls the moving mechanism 300 and the substrate holding unit 200 to cause the substrate holding unit 200 to hold the second substrate W2.

[0208] Next, in step S506, the control unit 102 controls the moving mechanism 300 to rotate the substrate holder 200 to, for example, the processing position Q2.

[0209] Next, step S105 is executed in the same manner as in the first embodiment.

[0210] Next, in step S507, the control unit 102 controls the moving mechanism 300 to rotate the substrate holding part 200 to the processing position Q1, and then controls the moving mechanism 300 and the substrate holding part 200 to hold the first substrate W1.

[0211] Next, in step S508, the control unit 102 controls the moving mechanism 300 to rotate the substrate holding unit 200 to the transfer position R. Then, the control unit 102 controls the moving mechanism 300 and the substrate holding unit 200 to place the first substrate W1 on the transfer table 150.

[0212] Next, in step S509, the control unit 102 controls the moving mechanism 300 to rotate the substrate holding part 200 to the processing position Q2, and then controls the moving mechanism 300 and the substrate holding part 200 to hold the second substrate W2.

[0213] Next, in step S510, the first substrate W1 placed on the transfer table 150 is carried out to the outside of the chamber 11. Specifically, the control unit 102 controls the center robot CR to have the center robot CR hold the first substrate W1 and then carry it out to the outside of the chamber 11. At this time, the first substrate W1 is carried out to the outside of the chamber 11 through the opening 12.

[0214] Next, in step S511, the control unit 102 controls the moving mechanism 300 to rotate the substrate holding unit 200 to the transfer position R. Then, the control unit 102 controls the moving mechanism 300 and the substrate holding unit 200 to place the second substrate W2 on the transfer table 150.

[0215] Next, in step S512, the moving mechanism 300 is controlled to rotate the substrate holding part 200 to one of the processing positions Q. Note that in step S512, it is only necessary for the substrate holding part 200 to retreat from the transfer position R, so the substrate holding part 200 may be rotated to a position other than the processing position Q (for example, a position between adjacent processing positions Q).

[0216] Next, in step S513, the second substrate W2 is carried out to the outside of the chamber 11. Specifically, the control unit 102 controls the center robot CR to have the center robot CR hold the second substrate W2 and then carry it out to the outside of the chamber 11. At this time, the second substrate W2 is carried out to the outside of the chamber 11 through the opening 12.

[0217] In this way, the processing for the first substrate W1 and the second substrate W2 is completed.

[0218] Other aspects of the substrate processing method of the second embodiment are the same as those of the first embodiment, etc. Note that, although the second embodiment has been described as an example in which two substrates W, the first substrate W1 and the second substrate W2, are processed in parallel, the present invention is not limited to this. The same number of substrates W as the number of processing positions Q (here, four) can be processed in parallel.

[0219] In this embodiment, as described above, a transfer position R is provided inside the chamber 11, where a transfer table 150 that supports a substrate W is disposed. Therefore, the substrate holding part 200 does not need to receive the substrate W directly from the center robot CR. Therefore, even while the substrate holding part 200 is operating, the center robot CR can transfer the substrate W to or receive it from the transfer table 150. Furthermore, even while the center robot CR is operating, the substrate holding part 200 can transfer the substrate W to or receive it from the transfer table 150. Therefore, when a substrate W is transferred between the center robot CR and the substrate holding part 200, waiting time for the center robot CR or the substrate holding part 200 can be reduced.

[0220] Other effects of the second embodiment are similar to those of the first embodiment.

[0221] (Third embodiment) Next, a substrate processing apparatus 100 according to a third embodiment of the present invention will be described with reference to Figures 14 to 18. Figure 14 is a schematic plan view of the substrate processing apparatus 100 according to the third embodiment. Figure 15 is a schematic plan view showing the inside of one chamber 11. In the third embodiment, unlike the first and second embodiments, an example will be described in which the substrate holding part 200 can rotate once around a rotation axis L200.

[0222] 14, in this embodiment, in a plan view, the number of substrate processing units 10 is, for example, four, but is not limited to four. Two substrate processing units 10 are disposed adjacent to each other. Furthermore, two adjacent substrate processing units 10 are disposed on either side of a passage 111 in the Y direction.

[0223] In this embodiment, similarly to the second embodiment, there are a plurality of (here, four) processing positions Q and a transfer position R within the chamber 11. An immersion tank 400 is disposed at the processing position Q, and a transfer table 150 is disposed at the transfer position R.

[0224] As in the second embodiment, the processing positions Q and the transfer position R are located on a concentric circle C200. For ease of understanding, the four processing positions Q may be referred to as processing position Q1, processing position Q2, processing position Q3, and processing position Q4. In this embodiment, processing position Q1, processing position Q2, processing position Q3, and processing position Q4 are arranged in this order in a clockwise direction from the transfer position R.

[0225] In this embodiment, the substrate holding part 200 can rotate one revolution (one lap) or more around the rotation axis L200.

[0226] In this embodiment, the processing positions Q are arranged over approximately one circumference around the pivot axis L200.

[0227] 15, in this embodiment, the substrate W is processed with the same chemical liquid at three of the four processing positions Q (e.g., processing positions Q1, Q2, and Q3). Furthermore, the substrate W is processed with a rinse liquid at the remaining processing position Q (e.g., processing position Q4). In this embodiment, the chemical liquid is an example of the "first processing liquid" of the present invention, and the rinse liquid is an example of the "second processing liquid" of the present invention.

[0228] Next, a substrate processing method according to a third embodiment will be described with reference to Fig. 16. Fig. 16 is a flow diagram of the substrate processing method according to the third embodiment. The substrate processing method by the substrate processing apparatus 100 according to the third embodiment includes steps S601 and S602, and steps S603 and S604 in addition to the substrate processing method according to the second embodiment. In the third embodiment, a chemical liquid and a rinse liquid are used as the processing liquid.

[0229] 16, steps S501 to S507 are performed in the same manner as in the second embodiment. As a result, the first substrate W1 is immersed at the processing position Q1, and the second substrate W2 is immersed at the processing position Q2. The substrate holder 200 holds the first substrate W1.

[0230] Next, in step S601, the control unit 102 controls the moving mechanism 300 to rotate the substrate holder 200 to a processing position Q4 (hereinafter, in this embodiment, may be referred to as a rinsing processing position).

[0231] Next, in step S602, the control unit 102 processes the first substrate W1 with a rinse liquid. At this time, the rinse process may be performed by immersing the first substrate W1 in the rinse liquid stored in the immersion tank 400. However, in this embodiment, as will be described later, the rinse process is performed without immersing the first substrate W1 in the rinse liquid.

[0232] Next, steps S508 to S510 are performed in the same manner as in the second embodiment, whereby the first substrate W1 is carried out to the outside of the chamber 11, and the substrate holding part 200 holds the second substrate W2.

[0233] Next, in step S603, the control unit 102 controls the moving mechanism 300 to rotate the substrate holding unit 200 to the processing position Q4 (rinsing processing position).

[0234] Next, in step S604, the control unit 102 processes the second substrate W2 with a rinse liquid in the same manner as in step S602.

[0235] Next, steps S511 to S513 are executed in the same manner as in the second embodiment.

[0236] In this way, the processing for the first substrate W1 and the second substrate W2 is completed.

[0237] Other aspects of the substrate processing method of the third embodiment are the same as those of the second embodiment. Note that, although the third embodiment has been described as an example in which two substrates W, the first substrate W1 and the second substrate W2, are processed in parallel, the present invention is not limited to this. The same number of substrates W as the number of processing positions Q (here, three) can be processed in parallel.

[0238] In this embodiment, as described above, the substrate holding part 200 can rotate one revolution (one revolution) or more around the rotation axis L200. This can prevent unnecessary movement of the substrate holding part 200. Specifically, the substrate holding part 200 can reach the multiple processing positions Q efficiently by rotating, for example, clockwise or counterclockwise as appropriate.

[0239] Furthermore, as described above, the substrate W is treated with a chemical liquid at the first treatment position (e.g., treatment positions Q1 to Q3), and is treated with a rinse liquid at the second treatment position (e.g., treatment position Q4). Therefore, unlike when treatment with a chemical liquid and treatment with a rinse liquid are performed at one treatment position Q, for example, the treatment liquid can be left stored in the immersion tank 400. In other words, it is not necessary to replace the treatment liquid in the immersion tank 400 every time a substrate W is immersed. This allows for further reduction in the amount of treatment liquid consumed.

[0240] Other effects of the third embodiment are the same as those of the second embodiment.

[0241] Next, the substrate processing unit 10 in the substrate processing apparatus 100 of the third embodiment will be further described with reference to Figure 17. Figure 17 is a schematic view of the substrate processing unit 10 in the substrate processing apparatus 100 of the third embodiment.

[0242] 17, the substrate processing unit 10 of the third embodiment has four processing positions Q, as described above. Processing positions Q1 to Q3 are configured similarly to the processing positions Q of the first and second embodiments. On the other hand, processing position Q4 is configured to be suitable for performing only a rinse process without performing a chemical process. It is also possible to perform a chemical process at processing position Q4.

[0243] The substrate processing unit 10 includes a cup 480. The cup 480 is disposed at a processing position Q4.

[0244] The cup 480 is a container-like structure with an open top, and accommodates the substrate W. The substrate W is subjected to a rinse process while placed in the cup 480.

[0245] The cup 480 has, for example, a substantially circular shape in a plan view. The cup 480 has a bottom wall 481 and a side wall 482. The bottom wall 481 may have a circular shape in a plan view. The side wall 482 is connected to the bottom wall 481. The side wall 482 may be connected to an end (peripheral edge) of the bottom wall 481. The side wall 482 extends upward from the bottom wall 481.

[0246] The side wall 482 has a structure similar to that of the side wall 402 of the cup 450. Specifically, the side wall 482 has a lower wall portion 482a and an upper wall portion 482b. The lower wall portion 482a extends upward from the bottom wall 481. The upper wall portion 482b slopes inward from the upper end of the lower wall portion 482a in an upward direction.

[0247] The cup 480 collects the processing liquid (here, the rinse liquid) that splashes around the substrate W due to, for example, the rotation of the substrate W. In addition, an exhaust device (not shown) may be connected to the cup 480, and the gas in the inner space of the cup 480 may be exhausted to the outside of the chamber 11.

[0248] The substrate processing apparatus 100 includes a third supply unit 70. The third supply unit 70 is controlled by a control unit 102.

[0249] The third supply unit 70 supplies the rinse liquid to the cup 480. The third supply unit 70 supplies the rinse liquid from below the cup 480. In the present embodiment, the third supply unit 70 is capable of ejecting the processing liquid toward the lower surface Wb of the substrate W held by the substrate holding unit 200.

[0250] Specifically, the third supply unit 70 includes a rinse liquid pipe 71 , an opening / closing valve 72 , and a nozzle 78 .

[0251] The rinse liquid pipe 71 is an annular member through which the rinse liquid flows.

[0252] A rinse liquid is supplied from a supply source to the rinse liquid pipe 71. The downstream end of the rinse liquid pipe 71 is connected to a nozzle 78.

[0253] The nozzle 78 ejects the rinse liquid. In this embodiment, the nozzle 78 ejects the processing liquid toward the lower surface Wb of the substrate W held by the substrate holding part 200. The nozzle 78 is disposed in the center of the cup 480. In this embodiment, the tip (upper end) of the nozzle 78 protrudes upward from the upper surface of the bottom wall 481 of the cup 480. The nozzle 78 may be formed separately from the cup 480, or may be formed as part of the cup 480.

[0254] The second discharge part 60 is connected to the bottom wall 481 of the cup 480. The second discharge part 60 discharges the processing liquid (here, the rinse liquid) in the cup 480 to the outside of the cup 480.

[0255] The on-off valve 72 is provided in the rinse liquid pipe 71 and opens and closes a flow path in the rinse liquid pipe 71. The on-off valve 72 adjusts the opening of the rinse liquid pipe 71 to adjust the flow rate of the rinse liquid supplied to the rinse liquid pipe 71. The on-off valve 72 also includes a valve body (not shown) with a valve seat provided therein, a valve element that opens and closes the valve seat, and an actuator (not shown) that moves the valve element between an open position and a closed position.

[0256] In this embodiment, by configuring the processing position Q4 (rinsing processing position) as described above, the configuration of the processing position Q4 where the rinsing processing is performed can be simplified.

[0257] The other configurations of the third embodiment are the same as those of the second embodiment.

[0258] Next, the rinsing process at the processing position Q4 (rinsing process position) of the third embodiment will be described with reference to Fig. 18. That is, steps S602 and S604 in Fig. 16 will be described. Fig. 18 is a schematic diagram for explaining the rinsing process at the processing position Q4 of the third embodiment.

[0259] 18, the substrate W is placed in the cup 480. Specifically, the control unit 102 controls the moving mechanism 300 to lower the substrate holder 200. As a result, the substrate W is positioned in the cup 480.

[0260] The control unit 102 then controls the substrate holding unit 200 to start rotating the substrate W. Thereafter, the control unit 102 switches the on-off valve 37 of the first supply unit 30 and the on-off valve 72 of the third supply unit 70 from a closed state to an open state. This causes the rinsing liquid to be discharged from the nozzles 38 and 78 toward the substrate W. The rinsing liquid discharged onto the upper surface Wa and lower surface Wb of the substrate W flows from the center to the periphery of the substrate W and is then discharged radially outward. The rinsing liquid discharged from the substrate W is received in the cup 480 and is discharged to the outside of the chamber 11 via the second discharge unit 60.

[0261] Then, the control unit 102 switches the on-off valve 37 and the on-off valve 72 from the open state to the closed state, thereby stopping the supply of the rinsing liquid to the substrate W.

[0262] Thereafter, after the rinse liquid has been discharged from the substrate W, the control unit 102 controls the substrate holder 200 to stop the rotation of the substrate W.

[0263] Then, the control unit 102 controls the moving mechanism 300 to raise the substrate holder 200.

[0264] (Second Modification) Next, a substrate processing apparatus 100 according to a second modified example of the third embodiment of the present invention will be described with reference to Fig. 19. Fig. 19 is a schematic plan view showing the inside of one chamber 11 of the substrate processing apparatus 100 according to the second modified example. In the second modified example, unlike the third embodiment, an example will be described in which a plurality of processing positions Q using a rinse liquid are provided.

[0265] As shown in FIG. 19, in the second modified example, a plurality of (four in this case) processing positions Q and a transfer position R are provided in the chamber 11, similar to the third embodiment.

[0266] In the second modified example, the substrate W is processed with the same chemical liquid at two of the four processing positions Q (e.g., processing position Q2 and processing position Q3). Furthermore, the substrate W is processed with a rinse liquid at the remaining two processing positions Q (e.g., processing position Q1 and processing position Q4). Thus, in the second modified example, the same number of processing positions Q using the rinse liquid as the number of processing positions Q using the chemical liquid are provided.

[0267] In the second modified example, for example, the first substrate W1 is processed at the processing positions Q2 and Q1, and the second substrate W2 is processed at the processing positions Q3 and Q4.

[0268] The other structures, other substrate processing methods, and effects of the second modified example are the same as those of the third embodiment. Although the second modified example describes an example in which the same chemical solution is used at processing positions Q2 and Q3, the present invention is not limited to this. For example, different chemical solutions may be used at processing positions Q2 and Q3.

[0269] (Third Modification) Next, a substrate processing apparatus 100 according to a third modified example of the third embodiment of the present invention will be described with reference to Figures 20 and 21. Figure 20 is a schematic plan view showing the inside of one chamber 11 of the substrate processing apparatus 100 of the third modified example. Unlike the third embodiment and the second modified example, the third modified example describes an example in which substrates W are processed using different types of chemical liquids (here, two types of chemical liquids).

[0270] As shown in FIG. 20, in the third modified example, the multiple processing positions Q include a first processing position (e.g., processing position Q1) for processing the substrate W with a first chemical liquid, a second processing position (e.g., processing position Q3) for processing the substrate W with a second chemical liquid different from the first chemical liquid, and a third processing position (e.g., processing position Q2 and processing position Q4) for processing the substrate W with a rinse liquid.

[0271] In the third modified example, the substrate W is processed using different types of chemical liquids. Specifically, the substrate W is processed using a first chemical liquid and a second chemical liquid. For example, at the processing position Q1, the substrate W is processed using the first chemical liquid. Also, for example, at the processing position Q2, the substrate W is processed using a rinse liquid. Also, for example, at the processing position Q3, the substrate W is processed using the second chemical liquid. Also, for example, at the processing position Q4, the substrate W is processed using a rinse liquid.

[0272] The third processing position also includes a third processing position (e.g., processing position Q2) that rinses the substrate W that has been processed at the first processing position (e.g., processing position Q1), and a third processing position (e.g., processing position Q4) that rinses the substrate W that has been processed at the second processing position (e.g., processing position Q3).

[0273] In the third modified example, the substrate holding part 200 transports the substrate W sequentially to a plurality of processing positions Q in a predetermined rotation direction (e.g., clockwise direction) around the rotation axis L200. Specifically, the substrate holding part 200 transports the substrate W sequentially to processing position Q1, processing position Q2, processing position Q3, processing position Q4, and transfer position R (see arrows I to V in FIG. 20).

[0274] The other structures of the third modified example are similar to those of the third embodiment.

[0275] In the third modified example, as described above, the substrate holding part 200 transports the substrate W sequentially to a plurality of processing positions Q in a predetermined rotation direction around the rotation axis L200. Therefore, it is possible to prevent unnecessary movement of the substrate holding part 200.

[0276] As described above, the substrate W is treated with a first chemical liquid at the first treatment position (e.g., treatment position Q1), treated with a second chemical liquid at the second treatment position (e.g., treatment position Q3), and treated with a rinse liquid at the third treatment position (e.g., treatment positions Q2, Q4). Thus, the substrate W can be treated with at least three treatment liquids in one chamber 11.

[0277] Furthermore, as described above, the multiple third processing positions (e.g., processing positions Q2, Q4) include a third processing position (e.g., processing position Q2) that rinses the substrate W processed at the first processing position (e.g., processing position Q1), and a third processing position (e.g., processing position Q4) that rinses the substrate W processed at the second processing position (e.g., processing position Q3). This prevents multiple chemical liquids from mixing in the rinse liquid. Furthermore, unlike when only one third processing position is provided that processes the substrate W with the rinse liquid, it is possible to prevent, for example, a waiting time from occurring at the third processing position before the rinse process.

[0278] Other effects of the third modified example are similar to those of the third embodiment.

[0279] Next, a substrate processing method according to a third modified example will be described with reference to Fig. 21. Fig. 21 is a flow diagram of the substrate processing method according to the third modified example. The substrate processing method by the substrate processing apparatus 100 according to the third modified example includes steps S701 to S706. Note that the method of rotating the substrate holder 200, and the method of holding and releasing the substrate W are the same as those in the above embodiment, and therefore description thereof will be omitted.

[0280] As shown in FIG. 21, in step S701, the substrate W is loaded into the chamber 11 in the same manner as in step S501.

[0281] Next, in step S702, the control unit 102 controls the moving mechanism 300, the substrate holding unit 200, etc. to immerse the substrate W in the first chemical liquid at the processing position Q1.

[0282] Next, in step S703, the control unit 102 controls the moving mechanism 300, the substrate holding unit 200, etc. to rinse the substrate W with the rinse liquid at the processing position Q2.

[0283] Next, in step S704, the control unit 102 controls the moving mechanism 300, the substrate holding unit 200, etc. to immerse the substrate W in the second chemical liquid at the processing position Q3.

[0284] Next, in step S705, the control unit 102 controls the moving mechanism 300, the substrate holding unit 200, etc. to rinse the substrate W with the rinse liquid at the processing position Q4.

[0285] Next, in step S706, the control unit 102 controls the moving mechanism 300, the substrate holding unit 200, the center robot CR, etc. to unload the substrate W from the chamber 11.

[0286] In this manner, the processing of the substrate W is completed.

[0287] Other aspects of the substrate processing method of the third modified example are similar to those of the third embodiment.

[0288] Although not described here, it is also possible to process multiple substrates W in parallel. For example, while a first substrate W1 is being immersed in the processing position Q3, a second substrate W2 may be immersed in the processing position Q1. In this case, two substrates W can be processed in parallel.

[0289] Alternatively, for example, an immersion tank 400 may be provided at processing positions Q2 and Q4 instead of the cup 480, and the substrates W may be rinsed by immersing them in a rinse liquid. In this case, four substrates W can be processed in parallel by advancing the processing position Q of the leading substrate W by one position each time the processing position Q of the leading substrate W is advanced by one position. In this way, it is possible to process the same number of substrates W in parallel as the number of processing positions Q where the immersion processing is performed (four in this case).

[0290] (Fourth Modification) Next, a substrate processing apparatus 100 according to a fourth modified example of the third embodiment of the present invention will be described with reference to Figures 22 and 23. Figure 22 is a schematic plan view showing the inside of one chamber 11 of the substrate processing apparatus 100 of the fourth modified example. Unlike the third modified example, the fourth modified example describes an example in which substrates W that have been processed using different types of chemical liquids are rinsed at one processing position Q.

[0291] 22, in the fourth modified example, the multiple processing positions Q include a first chemical liquid processing position (e.g., processing position Q1) for processing the substrate W with a first chemical liquid, a second chemical liquid processing position (e.g., processing position Q2) for processing the substrate W with a second chemical liquid, a third chemical liquid processing position (e.g., processing position Q3) for processing the substrate W with a third chemical liquid different from the first and second chemical liquids, and a rinse liquid processing position (e.g., processing position Q4) for processing the substrate W with a rinse liquid. Note that in the fourth modified example, the first chemical liquid processing position (processing position Q1) is an example of the "first processing position" of the present invention. The second chemical liquid processing position (processing position Q2) is an example of the "second processing position" of the present invention. The rinse liquid processing position (processing position Q4) is an example of the "third processing position" of the present invention.

[0292] Specifically, in the fourth modified example, the substrate W is processed using three different types of chemical liquids. Specifically, the substrate W is processed using a first chemical liquid, a second chemical liquid, and a third chemical liquid. For example, at the processing position Q1, the substrate W is processed using the first chemical liquid. Also, for example, at the processing position Q2, the substrate W is processed using the second chemical liquid. Also, for example, at the processing position Q3, the substrate W is processed using the third chemical liquid. And also, at the processing position Q4, the substrate W is processed using a rinse liquid.

[0293] Furthermore, at a rinsing liquid processing position (e.g., processing position Q4), the substrate W processed at the first chemical liquid processing position (e.g., processing position Q1) is rinsed, the substrate W processed at the second chemical liquid processing position (e.g., processing position Q2) is rinsed, and the substrate W processed at the third chemical liquid processing position (e.g., processing position Q3) is rinsed.

[0294] In the fourth variant, the substrate holding part 200 rotates around the pivot axis L200 to transport the substrate W to the transfer position R, processing position Q1, processing position Q4, processing position Q2, processing position Q4, processing position Q3, processing position Q4 and transfer position R in that order (see I to VII in Figure 22).

[0295] In the fourth modified example, although not shown, the first supply unit 30 and the second supply unit 40 are configured to be able to supply a third chemical liquid to the immersion tank 400, similar to the first chemical liquid and the second chemical liquid.

[0296] The other structures of the fourth modified example are similar to those of the third modified example.

[0297] In the fourth modified example, as described above, at one third processing position (e.g., processing position Q4), the substrate W processed at the first processing position (e.g., processing position Q1) is rinsed, and the substrate W processed at the second processing position (e.g., processing position Q2) is rinsed. Furthermore, in the fourth modified example, at one third processing position (e.g., processing position Q4), the substrate W processed at processing position Q3 is also rinsed. In other words, the rinse processing position (third processing position) is shared. Therefore, it is possible to prevent the number of rinse processing positions (third processing positions) from increasing. This prevents the chamber 11 from becoming larger and the number of parts from increasing.

[0298] Other effects of the fourth modified example are the same as those of the third modified example.

[0299] Next, a substrate processing method according to a fourth modified example will be described with reference to Fig. 23. Fig. 23 is a flow diagram of the substrate processing method according to the fourth modified example. The substrate processing method by the substrate processing apparatus 100 according to the fourth modified example includes steps S701, S702, S801 to S805, and S706.

[0300] As shown in FIG. 23, steps S701 and S702 are executed in the same manner as in the third modified example.

[0301] Next, in step S801, the control unit 102 controls the moving mechanism 300, the substrate holder 200, etc. to rinse the substrate W with the rinse liquid at the processing position Q4.

[0302] Next, in step S802, the control unit 102 controls the moving mechanism 300, the substrate holding unit 200, etc. to immerse the substrate W in the second chemical liquid at the processing position Q2.

[0303] Next, in step S803, the control unit 102 controls the moving mechanism 300, the substrate holding unit 200, etc. to rinse the substrate W with the rinse liquid at the processing position Q4.

[0304] Next, in step S804, the control unit 102 controls the moving mechanism 300, the substrate holding unit 200, etc. to immerse the substrate W in the third chemical liquid at the processing position Q3.

[0305] Next, in step S805, the control unit 102 controls the moving mechanism 300, the substrate holding unit 200, etc. to rinse the substrate W with the rinse liquid at the processing position Q4.

[0306] Next, step S706 is executed in the same manner as in the third modified example.

[0307] In this manner, the processing of the substrate W is completed.

[0308] Other aspects of the substrate processing method of the fourth modified example are the same as those of the third modified example.

[0309] Although not described here, it is also possible to process multiple substrates W in parallel. For example, while the first substrate W1 is being immersed at the processing position Q2, the second substrate W2 may be immersed at the processing position Q1. Alternatively, while the first substrate W1 is being immersed at the processing position Q3, the second substrate W2 may be immersed at the processing position Q2, and the third substrate W3 may be immersed at the processing position Q1.

[0310] (Fourth embodiment) Next, a substrate processing apparatus 100 according to a fourth embodiment of the present invention will be described with reference to Figures 24 and 25. Figure 24 is a schematic plan view of the substrate processing apparatus 100 according to the fourth embodiment. Unlike the first embodiment, the fourth embodiment describes an example in which substrates W are processed one by one in one chamber 11.

[0311] As shown in FIG. 24, in this embodiment, as in the third embodiment, for example, four substrate processing units 10 are provided in plan view, although this is not particularly limited thereto.

[0312] In this embodiment, similar to the first embodiment, there are a plurality of (here, two) processing positions Q in the chamber 11. However, the chamber 11 is not provided with a transfer position R. That is, in this embodiment, the substrate processing unit 10 does not have a transfer table 150.

[0313] In this embodiment, similar to the first embodiment, a plurality of (here, two) processing positions Q are located on a concentric circle C200. Hereinafter, for ease of understanding, the two processing positions Q may be referred to as processing position Q1 and processing position Q2. Processing position Q1 is located adjacent to the opening 12. On the other hand, processing position Q2 is located farther from the opening 12 than processing position Q1.

[0314] In this embodiment, for example, the substrate W is processed with a chemical liquid at the processing position Q1, while the substrate W is processed with a rinse liquid at the processing position Q2.

[0315] Next, a substrate processing method according to a fourth embodiment will be described with reference to Fig. 25. Fig. 25 is a flow diagram of the substrate processing method according to the fourth embodiment. The substrate processing method by the substrate processing apparatus 100 according to the fourth embodiment includes steps S901, S902, S703, and S706. Note that the method of rotating the substrate holder 200, and the method of holding and releasing the substrate W are the same as those in the above embodiments, and therefore description thereof will be omitted.

[0316] 25, in step S901, similarly to step S101, the substrate W is carried into the chamber 11. Then, similarly to step S101, the substrate W is held.

[0317] Next, in step S902, the control unit 102 controls the moving mechanism 300, the substrate holder 200, etc. to immerse the substrate W in the chemical solution at the processing position Q1. At this time, the substrate W is placed on the support table 410, for example, as in the first embodiment, etc.

[0318] Next, in step S703, the control unit 102 controls the moving mechanism 300, the substrate holding unit 200, etc. to rinse the substrate W with the rinse liquid at the processing position Q2.

[0319] Next, in step S706, the control unit 102 controls the moving mechanism 300, the substrate holding unit 200, the center robot CR, etc. to unload the substrate W from the chamber 11.

[0320] In this manner, the processing of the substrate W is completed.

[0321] Other aspects of the substrate processing method of the fourth embodiment are similar to those of the first embodiment and the like.

[0322] In the fourth embodiment, for example, an example has been described in which the substrate W is placed on the support table 410 when the substrate W is immersed in the chemical solution in step S902, but the present invention is not limited to this. For example, when the substrate W is immersed in the chemical solution stored in the immersion tank 400, the substrate W may be immersed for a predetermined time while being held by the substrate holder 200. In this case, the support table 410 does not have to be provided in the immersion tank 400. Also, in this case, the substrate W may be immersed while being rotated by the substrate holder 200. With this configuration, the substrate W can be immersed in a state in which the processing solution is convecting, thereby enabling the substrate W to be processed more uniformly.

[0323] In the fourth embodiment, as described above, the chemical treatment and the rinse treatment are performed at separate processing positions, so there is no need to replace the treatment liquid stored in the immersion tank 400 every time a treatment is performed.

[0324] Other effects of the fourth embodiment are similar to those of the first embodiment and the like.

[0325] (Fifth embodiment) Next, a substrate processing apparatus 100 according to a fifth embodiment of the present invention will be described with reference to Figures 26 to 38. Figure 26 is a schematic diagram of a substrate processing unit 10 in the substrate processing apparatus 100 of the fifth embodiment. In the fifth embodiment, unlike the above embodiments, an example will be described in which a lower substrate holding part 20 is provided at a processing position Q.

[0326] 26, in the fifth embodiment, the substrate processing unit 10 has a lower substrate holding part 20. The lower substrate holding part 20 is controlled by a control part 102. The lower substrate holding part 20 is disposed at at least one processing position Q.

[0327] The lower substrate holding part 20 horizontally holds the substrate W. The lower substrate holding part 20 horizontally holds the substrate W so that the upper surface Wa of the substrate W faces upward and the lower surface Wb of the substrate W faces vertically downward. In addition, the lower substrate holding part 20 rotates the substrate W while holding it.

[0328] For example, the lower substrate holding unit 20 may be a clamping type that clamps the edge of the substrate W. Alternatively, the lower substrate holding unit 20 may have any mechanism that holds the substrate W from its lower surface Wb. For example, the lower substrate holding unit 20 may be a vacuum type. In this case, the lower substrate holding unit 20 holds the substrate W horizontally by sucking the central portion of the lower surface Wb of the substrate W, which is the surface on which devices are not formed, against its upper surface. Alternatively, the lower substrate holding unit 20 may be a combination of a clamping type that brings multiple chuck pins into contact with the peripheral edge surface of the substrate W, and a vacuum type.

[0329] For example, the lower substrate holding part 20 includes a spin base 21, a chuck member 22, a shaft 23, an electric motor 24, and a housing 25. The chuck member 22 is provided on the spin base 21. The chuck member 22 chucks the substrate W. Typically, the spin base 21 is provided with a plurality of chuck members 22.

[0330] The shaft 23 is a hollow shaft. The shaft 23 extends vertically along the rotation axis AX4. The spin base 21 is coupled to the upper end of the shaft 23. The substrate W is placed above the spin base 21.

[0331] The spin base 21 is disk-shaped and supports the substrate W horizontally. The shaft 23 extends downward from the center of the spin base 21. The electric motor 24 applies a rotational force to the shaft 23. The electric motor 24 rotates the shaft 23 in a rotational direction, thereby rotating the substrate W and the spin base 21 around the rotation axis AX4. The housing 25 surrounds the shaft 23 and the electric motor 24.

[0332] The substrate processing unit 10 has a cup 490. The cup 490 is arranged to surround the periphery of the lower substrate holding part 20. The cup 490 collects the processing liquid splashed from the substrate W. The cup 490 moves up and down. For example, the cup 490 moves up vertically to the side of the substrate W during the period in which the processing liquid is supplied to the substrate W. In this case, the cup 490 collects the processing liquid splashed from the substrate W due to the rotation of the substrate W. Furthermore, when the period in which the processing liquid is supplied to the substrate W ends, the cup 490 moves down vertically from the side of the substrate W. The cup 490 is controlled by the control part 102.

[0333] Furthermore, a second discharge unit 60 and a fourth supply unit 140 are provided at processing position Q where lower substrate holding unit 20 and cup 490 are disposed. Second discharge unit 60 is connected to the lower part of cup 490. Second discharge unit 60 discharges the processing liquid in cup 490 to the outside of cup 490.

[0334] Fourth supply unit 140 has a structure similar to that of second supply unit 40. Specifically, fourth supply unit 140 includes first chemical liquid pipe 141, second chemical liquid pipe 142, rinse liquid pipe 143, common pipe 144, on-off valve 145, on-off valve 146, on-off valve 147, and nozzle 148.

[0335] Nozzle 148 of fourth supply unit 140 protrudes upward from the center of spin base 21 and discharges the processing liquid toward substrate W. Other configurations of first chemical liquid pipe 141, second chemical liquid pipe 142, rinsing liquid pipe 143, common pipe 144, on / off valve 145, on / off valve 146, on / off valve 147, and nozzle 148 are similar to the configurations of first chemical liquid pipe 41, second chemical liquid pipe 42, rinsing liquid pipe 43, common pipe 44, on / off valve 45, on / off valve 46, on / off valve 47, and nozzle 48 of second supply unit 40.

[0336] The substrate processing apparatus 100 includes a fifth supply unit 80 and a sixth supply unit 85. The fifth supply unit 80 and the sixth supply unit 85 are controlled by a control unit .

[0337] The fifth supply unit 80 supplies a gas to the substrate W. In this embodiment, the fifth supply unit 80 supplies the gas toward the upper surface Wa of the substrate W held by the substrate holding unit 200 or the lower substrate holding unit 20. The gas supplied by the fifth supply unit 80 is not particularly limited, but is preferably an inert gas such as nitrogen gas (N2 gas), helium gas (He gas), or argon gas (Ar gas). In this embodiment, the gas supplied by the fifth supply unit 80 is nitrogen gas.

[0338] The fifth supply unit 80 has a gas pipe 81 and an on-off valve 82. The gas pipe 81 is a tubular member through which an inert gas flows. The inert gas is supplied to the gas pipe 81 from a supply source. The downstream end of the gas pipe 81 is connected to the nozzle 38. The gas pipe 81 flows the inert gas through the nozzle 38.

[0339] The on-off valve 82 is provided in the gas pipe 81 and opens and closes the flow path in the gas pipe 81. The on-off valve 82 adjusts the opening degree of the gas pipe 81 to adjust the flow rate of the inert gas supplied to the gas pipe 81.

[0340] In this embodiment, the nozzle 38 has a flow path through which the inert gas passes, in addition to a flow path through which the liquid from the first supply unit 30 passes. The nozzle 38 ejects the inert gas toward the upper surface Wa of the substrate W held by the substrate holding unit 200 or the lower substrate holding unit 20.

[0341] The sixth supply unit 85 supplies gas to the substrate W. In this embodiment, the sixth supply unit 85 supplies gas toward the lower surface Wb of the substrate W held by the substrate holding unit 200 or the lower substrate holding unit 20. The gas supplied by the sixth supply unit 85 is the same as the gas supplied by the fifth supply unit 80.

[0342] The sixth supply unit 85 has a gas pipe 86 and an on-off valve 87. The gas pipe 86 is a tubular member through which an inert gas flows. The inert gas is supplied to the gas pipe 86 from a supply source. The downstream end of the gas pipe 86 is connected to a nozzle 148. The gas pipe 86 flows the inert gas to the nozzle 148.

[0343] The on-off valve 87 is provided in the gas pipe 86 and opens and closes the flow path in the gas pipe 86. The on-off valve 87 adjusts the opening degree of the gas pipe 86 to adjust the flow rate of the inert gas supplied to the gas pipe 86.

[0344] In this embodiment, the nozzle 148 is formed with a flow path through which an inert gas passes, in addition to a flow path through which the liquid from the fourth supply unit 140 passes. The nozzle 148 ejects the inert gas toward the lower surface Wb of the substrate W held by the substrate holding unit 200 or the lower substrate holding unit 20. Note that the downstream end of the gas pipe 86 may circulate the inert gas through a gap (not shown) around the nozzle 148, so that the inert gas is ejected from around the nozzle 148 onto the lower surface Wb of the substrate W.

[0345] 27 is a schematic diagram of the substrate processing unit 10 in the substrate processing apparatus 100 of the fifth embodiment. As shown in Fig. 27, the substrate processing apparatus 100 includes a seventh supply section 90. The seventh supply section 90 is controlled by a control section 102.

[0346] The seventh supply unit 90 supplies the processing liquid to the substrate W. In this embodiment, the seventh supply unit 90 supplies the processing liquid toward the upper surface Wa of the substrate W held by the substrate holding unit 200.

[0347] Specifically, the seventh supply unit 90 includes a second chemical liquid pipe 91 , a rinse liquid pipe 92 , a common pipe 93 , an on-off valve 94 , an on-off valve 95 , a nozzle 96 , and a nozzle moving mechanism 97 .

[0348] The second chemical liquid pipe 91, the rinse liquid pipe 92, and the common pipe 93 are tubular members through which the processing liquid flows.

[0349] The second chemical liquid is supplied from a supply source to second chemical liquid piping 91. The downstream end of second chemical liquid piping 91 is connected to common piping 93. Opening / closing valve 94 is provided in second chemical liquid piping 91 and opens and closes the flow path within second chemical liquid piping 91. Opening / closing valve 94 adjusts the opening degree of second chemical liquid piping 91 to adjust the flow rate of the second chemical liquid supplied to second chemical liquid piping 91.

[0350] A rinse liquid is supplied from a supply source to the rinse liquid pipe 92. The downstream end of the rinse liquid pipe 92 is connected to a common pipe 93. An open / close valve 95 is provided in the rinse liquid pipe 92 and opens and closes the flow path in the rinse liquid pipe 92. The open / close valve 95 adjusts the opening of the rinse liquid pipe 92 to adjust the flow rate of the rinse liquid supplied to the rinse liquid pipe 92.

[0351] In addition, each of the opening / closing valves 94 and 95 includes a valve body (not shown) having a valve seat provided therein, a valve element that opens and closes the valve seat, and an actuator (not shown) that moves the valve element between an open position and a closed position.

[0352] The downstream end of the common pipe 93 is connected to the nozzle 96. The common pipe 93 distributes the processing liquid to the nozzle 96.

[0353] The nozzle 96 discharges the processing liquid. In this embodiment, the nozzle 96 discharges the processing liquid toward the upper surface Wa of the substrate W held by the lower substrate holding part 20.

[0354] The nozzle movement mechanism 97, for example, raises and lowers the nozzle 96. For example, the nozzle movement mechanism 97 includes a ball screw mechanism and an electric motor that provides a driving force to the ball screw mechanism. Furthermore, the nozzle movement mechanism 97, for example, horizontally rotates the nozzle 96 around an axis (not shown) that extends vertically. For example, the nozzle movement mechanism 97 includes an electric motor.

[0355] The seventh supply unit 90 may include a first chemical liquid pipe that supplies the first chemical liquid, and an opening / closing valve that opens and closes the flow path in the first chemical liquid pipe.

[0356] In this embodiment, as shown in Fig. 26, the immersion tank 400 is not provided with a support stand 410. However, the immersion tank 400 may be provided with a support stand 410.

[0357] Next, a substrate processing method of the fifth embodiment will be described with reference to FIG. 28. FIG. 28 is a flow diagram of the substrate processing method of the fifth embodiment. The substrate processing method by the substrate processing apparatus 100 of the fifth embodiment includes steps S901 and S1001 to S1005. Here, an example will be described in which the structure of this embodiment described with reference to FIG. 26 is applied to the chamber structure described in the fourth embodiment with reference to FIG. 24. However, the structure of this embodiment may also be applied to the chamber structures of other embodiments, etc. Note that the method of rotating the substrate holder 200, and the method of holding and releasing the substrate W are the same as those of the above embodiments, and therefore will not be described here.

[0358] As shown in FIG. 28, step S901 is executed in the same manner as in the fourth embodiment.

[0359] Next, in step S1001, the control unit 102 controls the moving mechanism 300, the substrate holding unit 200, etc. to immerse the substrate W in the first chemical liquid at the processing position Q1.

[0360] Next, in step S1002, the control unit 102 controls the moving mechanism 300, the substrate holding unit 200, etc. to rinse the substrate W with the rinse liquid at the processing position Q1.

[0361] Next, in step S1003, the control unit 102 controls the moving mechanism 300, the substrate holding unit 200, the lower substrate holding unit 20, etc. to process the substrate W held by the lower substrate holding unit 20 at the processing position Q2 with the second chemical liquid. Note that at the processing position Q2, the substrate W is not immersed in the chemical liquid.

[0362] Next, in step S1004, the control unit 102 controls the moving mechanism 300, the substrate holding unit 200, the lower substrate holding unit 20, etc. to rinse the substrate W with the rinse liquid at the processing position Q2. Note that at the processing position Q2, the substrate W is not immersed in the rinse liquid.

[0363] Next, in step S1005, the control unit 102 controls the moving mechanism 300, the substrate holding unit 200, the center robot CR, etc. to unload the substrate W from the chamber 11.

[0364] In this manner, the processing of the substrate W is completed.

[0365] Other aspects of the substrate processing method of the fifth embodiment are similar to those of the fourth embodiment and the like.

[0366] Next, the substrate processing method at the processing positions Q1 and Q2 of the fifth embodiment will be further described with reference to FIGS. 27 and 29 to 38. FIG. 29 is a flow diagram of the substrate processing method at the processing positions Q1 and Q2 of the fifth embodiment. FIGS. 30 to 35 are schematic views for explaining the substrate processing method at the processing position Q1 of the fifth embodiment. FIGS. 36 to 38 are schematic views for explaining the substrate processing method at the processing position Q2 of the fifth embodiment. The substrate processing method at the processing positions Q1 and Q2 of the substrate processing apparatus 100 of the fifth embodiment includes steps S1101 to S1116. Step S1101 corresponds to, for example, step S901 described above. Steps S1102 to S1104 correspond to, for example, step S1001 described above. Steps S1105 to S1107 correspond to, for example, step S1002 described above. Step S1111 corresponds to, for example, step S1003 described above. Step S1112 corresponds to, for example, the above step S1004. Steps S1115 and S1116 correspond to, for example, the above step S1005.

[0367] 29, in step S1101, similarly to step S901, the substrate W is loaded into the chamber 11 and held therein. Note that the on-off valves 35 to 37, 45 to 47, 55, 82, 87, 94, 95, and 145 to 147 are closed, and the on-off valves 54 and 62 are open.

[0368] Next, in step S1102, the first chemical liquid is stored in the immersion tank 400. Specifically, as shown in FIG. 30 , the control unit 102 controls the moving mechanism 300 to lower the substrate holder 200 and move the substrate W into the inner space 400a of the immersion tank 400.

[0369] Then, the control unit 102 switches the on-off valve 54 from an open state to a closed state. The control unit 102 also switches the on-off valves 35 and 45 from a closed state to an open state. As a result, the first chemical liquid is discharged from the nozzle 38 toward the upper surface Wa of the substrate W, and the first chemical liquid is discharged from the nozzle 48 toward the lower surface Wb of the substrate W.

[0370] At this time, the control unit 102 controls the substrate holder 200 to rotate the substrate W. The rotation speed of the substrate W is not particularly limited, but is, for example, 100 rpm or more and 500 rpm or less.

[0371] The first chemical liquid then flows down from the upper surface Wa and the lower surface Wb of the substrate W and is stored in the immersion tank 400.

[0372] In step S1102, the first chemical liquid is discharged onto the substrate W while the substrate W is being rotated, so that the first chemical liquid quickly spreads over the entire upper surface Wa and lower surface Wb of the substrate W. This makes it possible to prevent, for example, a difference in processing time with the first chemical liquid between the center and the outer periphery of the substrate W.

[0373] Next, in step S1103, the substrate W is immersed in the first chemical liquid. Specifically, as shown in Fig. 31, when a predetermined time has elapsed since the start of supply of the first chemical liquid, the control unit 102 switches the on-off valve 35 and the on-off valve 45 from the open state to the closed state. At this time, the liquid level of the first chemical liquid is higher than the upper surface Wa of the substrate W, and the substrate W is immersed in the first chemical liquid. In other words, the substrate W is located inside the immersion tank 400 and is immersed in the processing liquid.

[0374] Furthermore, the control unit 102 controls the substrate holding unit 200 to stop the rotation of the substrate W. Note that the control unit 102 does not have to stop the rotation of the substrate W. That is, the control unit 102 may continue the rotation of the substrate W. In this case, the rotation speed of the substrate W is not particularly limited, but may be slower than the rotation speed in step S1102. The rotation speed of the substrate W may be, for example, not less than several tens of rpm and not more than several hundred rpm.

[0375] Next, in step S1104, the first chemical liquid is discharged from the immersion tank 400. Specifically, as shown in Fig. 32, when a predetermined time has elapsed since the control unit 102 switched the on-off valve 35 and the on-off valve 45 from the open state to the closed state, the control unit 102 switches the on-off valve 55 from the closed state to the open state. As a result, the first chemical liquid in the immersion tank 400 returns to the processing liquid cabinet. Note that in step S1104, the control unit 102 may also switch the on-off valve 54 from the closed state to the open state to discharge the first chemical liquid.

[0376] Furthermore, when discharging the first chemical liquid from the immersion tank 400, the control unit 102 changes the on-off valve 35 from a closed state to an open state. This causes the first chemical liquid to be discharged from the nozzle 38 onto the upper surface Wa of the substrate W. This prevents the upper surface Wa of the substrate W from drying, thereby preventing the pattern from collapsing and the generation of particles. The amount of the first chemical liquid discharged from the nozzle 38 is less than the amount of the first chemical liquid discharged from the first discharge unit 50.

[0377] At this time, the control unit 102 controls the substrate holder 200 to rotate the substrate W. The rotation speed of the substrate W is not particularly limited, but is, for example, 100 rpm or more and 500 rpm or less.

[0378] Next, in step S1105, the discharge of the rinse liquid is started. Specifically, as shown in Fig. 33, when a predetermined time has elapsed since the discharge of the first chemical liquid started, the control unit 102 switches the on-off valve 54 from a closed state to an open state and switches the on-off valve 55 from an open state to a closed state. At this time, the control unit 102 switches the on-off valve 35 from an open state to a closed state and switches the on-off valve 37 from a closed state to an open state. As a result, the processing liquid discharged onto the upper surface Wa of the substrate W is switched from the first chemical liquid to the rinse liquid. Also, at this time, the control unit 102 switches the on-off valve 47 from a closed state to an open state. As a result, the rinse liquid is discharged from the nozzle 48 onto the lower surface Wb of the substrate W.

[0379] Next, in step S1106, the substrate W is rinsed. Specifically, as shown in Fig. 34, the control unit 102 maintains the on-off valve 37, the on-off valve 47, and the on-off valve 54 in an open state. As a result, the upper surface Wa and the lower surface Wb of the substrate W are rinsed.

[0380] At this time, it is preferable to raise the substrate W. Specifically, the control unit 102 moves the substrate holder 200 to a third height position P3 where the substrate W faces the side wall 452 of the cup 450 in the horizontal direction.

[0381] Furthermore, for example, after raising the substrate W to the third vertical position P3, the control unit 102 may increase the rotation speed of the substrate W. The rotation speed of the substrate W is not particularly limited, but is, for example, 1500 rpm to 2000 rpm or higher.

[0382] Next, in step S1107, when a predetermined time has elapsed since the discharge of the rinsing liquid was started in step S1105, the control unit 102 controls the substrate holding unit 200 to stop the rotation of the substrate W. Thereafter, the control unit 102 stops the discharge of the rinsing liquid by switching the on-off valve 37 and the on-off valve 47 from the open state to the closed state. As a result, the upper surface Wa of the substrate W becomes covered with the rinsing liquid (see FIG. 35). This prevents the upper surface Wa of the substrate W from drying, thereby preventing the generation of particles and the like. Then, as shown in FIG. 35, the control unit 102 controls the moving mechanism 300 to raise the substrate holding unit 200.

[0383] Next, in step S1108, the control unit 102 controls the moving mechanism 300 to rotate the substrate holding part 200. As a result, the substrate holding part 200 is positioned at the processing position Q2. Note that the substrate W is rotated with its upper surface Wa covered with the rinse liquid.

[0384] 36 , the control unit 102 controls the moving mechanism 300, the substrate holding unit 200, and the lower substrate holding unit 20 to transfer the substrate W between the substrate holding unit 200 and the lower substrate holding unit 20. As a result, the substrate W is transferred from the substrate holding unit 200 to the lower substrate holding unit 20.

[0385] Next, in step S1110, the control unit 102 controls the lower substrate holding unit 20 to start rotating the substrate W.

[0386] 27 , the control unit 102 controls the seventh supply unit 90 to move the nozzle 96 above the substrate W. Then, the control unit 102 switches the on-off valve 94 and the on-off valve 146 from a closed state to an open state, thereby discharging the second chemical liquid from the nozzle 96 toward the upper surface Wa of the substrate W and discharging the second chemical liquid from the nozzle 148 toward the lower surface Wb of the substrate W. At this time, the control unit 102 controls the seventh supply unit 90 to move the nozzle 96 back and forth in the horizontal direction between a position above the center of the substrate W and a position above the peripheral edge of the substrate W.

[0387] Thereafter, when a predetermined time has elapsed since the supply of the second chemical liquid to the substrate W started, the control unit 102 stops the supply of the second chemical liquid by switching the opening / closing valve 94 and the opening / closing valve 146 from an open state to a closed state.

[0388] 37, the control unit 102 switches the on-off valve 95 and the on-off valve 147 from the closed state to the open state. As a result, the rinsing liquid is discharged from the nozzle 96 toward the upper surface Wa of the substrate W, and the rinsing liquid is discharged from the nozzle 148 toward the lower surface Wb of the substrate W. Note that in step S1112, the nozzle 96 is located above the center of the substrate W.

[0389] Thereafter, when a predetermined time has elapsed since the supply of the rinsing liquid to the substrate W started, the control unit 102 switches the on-off valve 95 and the on-off valve 147 from the open state to the closed state, thereby stopping the supply of the rinsing liquid.

[0390] Next, in step S1113, the substrate W is dried. Specifically, as shown in FIG. 38, the control unit 102 switches the on-off valve 82 and the on-off valve 87 from a closed state to an open state. As a result, an inert gas is discharged from the nozzle 38 toward the upper surface Wa of the substrate W, and an inert gas is discharged from the nozzle 148 toward the lower surface Wb of the substrate W. The control unit 102 also maintains the rotation of the substrate W by the lower substrate holding unit 20. As a result, the rinse liquid on the substrate W is blown away by the inert gas and centrifugal force, and the substrate W is dried. Thereafter, the control unit 102 controls the lower substrate holding unit 20 to stop the rotation of the substrate W.

[0391] Next, in step S1114, the control unit 102 controls the moving mechanism 300, the substrate holding unit 200, and the lower substrate holding unit 20 to transfer the substrate W between the substrate holding unit 200 and the lower substrate holding unit 20. As a result, the substrate W is transferred from the lower substrate holding unit 20 to the substrate holding unit 200.

[0392] Next, in step S1115, the control unit 102 controls the moving mechanism 300 to rotate the substrate holding unit 200. As a result, the substrate holding unit 200 moves from the processing position Q2 to the processing position Q1.

[0393] Next, in step S1116, the control unit 102 causes the substrate W to be unloaded from the chamber 11 in the same manner as in step S1005.

[0394] In this manner, the processing of the substrate W is completed.

[0395] In the fifth embodiment, by configuring the processing position Q2 as described above, it is possible to perform immersion processing and processing by a general single-wafer apparatus (non-immersion processing) on ​​the substrate W within one chamber 11.

[0396] Furthermore, the processing liquid is discharged from the first supply unit 30 and the second supply unit 40 toward the upper surface Wa and lower surface Wb of the substrate W, thereby storing the processing liquid in the immersion tank 400. Therefore, the processing of the upper surface Wa and lower surface Wb of the substrate W can be progressed while the processing liquid is stored. Furthermore, the time required for storing the processing liquid in the immersion tank 400 can be prevented from becoming too long.

[0397] Furthermore, while the substrate holder 200 is rotating the substrate W, the first supply unit 30 and the second supply unit 40 eject the processing liquid toward the substrate W, and the processing liquid is stored in the immersion tank 400. Therefore, the rotation of the substrate W causes the processing liquid ejected onto the substrate W to spread evenly over the substrate W. This makes it possible to prevent uneven processing.

[0398] Furthermore, when the first discharge unit 50 discharges the processing liquid in the immersion tank 400, the first supply unit 30 ejects the processing liquid toward the substrate W. This prevents the substrate W from drying out when the processing liquid in the immersion tank 400 is discharged. Furthermore, when the substrate W is rotating, it prevents the processing liquid that has bounced off the sidewall 402 of the immersion tank 400 from adhering to the substrate W. These features prevent the generation of particles.

[0399] The other steps and other effects of the fifth embodiment are the same as those of the first to fourth embodiments.

[0400] In the fifth embodiment, an example has been described in which step S1111 is performed after the rotation of the substrate W is started in step S1110, but step S1110 may be performed during step S1111, for example.

[0401] In the fifth embodiment, an example has been described in which the substrate W is subjected to a rinsing process and a drying process while held by the lower substrate holding part 20, but the present invention is not limited to this. For example, the substrate W may be subjected to a rinsing process and / or a drying process while held by the substrate holding part 200.

[0402] In the fifth embodiment, an example has been described in which the rinse liquid is supplied from the seventh supply unit 90 to the upper surface Wa of the substrate W, but the present invention is not limited to this. For example, the rinse liquid may be supplied from the first supply unit 30 to the upper surface Wa of the substrate W.

[0403] Furthermore, after starting the discharge of the rinse liquid in step S1105, when rinsing the substrate W in step S1106, the on-off valve 54 may be closed to store the rinse liquid in the immersion tank 400. In this case, the rinse liquid may be allowed to overflow from the immersion tank 400. By allowing the rinse liquid to overflow from the immersion tank 400 in this manner, the cup 450 provided around the immersion tank 400 can be cleaned with the overflowed rinse liquid.

[0404] (Fifth Modification) Next, a substrate processing apparatus 100 according to a fifth modified example of the fifth embodiment of the present invention will be described with reference to Figures 39 and 40. Figure 39 is a flow diagram of a substrate processing method according to the fifth modified example of the fifth embodiment. In the fifth modified example, unlike the fifth embodiment, an example will be described in which a rinse process is not performed at processing position Q1. The substrate processing method using the substrate processing apparatus 100 according to the fifth modified example includes steps S901, S1001, S1201, and S1003 to S1005. The structure of the fifth modified example is similar to that of the fifth embodiment.

[0405] As shown in FIG. 39, step S901 is executed in the same manner as in the fifth embodiment.

[0406] Next, in step S1001, the control unit 102 controls the moving mechanism 300, the substrate holding unit 200, etc. to immerse the substrate W in the first chemical liquid at the processing position Q1.

[0407] Next, in step S1201, the control unit 102 controls the moving mechanism 300, the substrate holding unit 200, the lower substrate holding unit 20, etc. to rinse the substrate W with the rinse liquid at the processing position Q2.

[0408] Next, steps S1003 to S1005 are executed in the same manner as in the fifth embodiment.

[0409] In this manner, the processing of the substrate W is completed.

[0410] Other aspects of the substrate processing method of the fifth modified example are the same as those of the fifth embodiment.

[0411] Next, a substrate processing method at processing positions Q1 and Q2 according to the fifth modified example will be further described with reference to Figure 40. Figure 40 is a flow diagram of the substrate processing method at processing positions Q1 and Q2 according to the fifth modified example. Steps S1101, S1301, S1302, S1111, S1112, and S1116 correspond to, for example, steps S901, S1001, S1201, S1003, S1004, and S1005, respectively.

[0412] As shown in FIG. 40, step S1101 is executed in the same manner as in the fifth embodiment.

[0413] Next, in step S1301, the substrate W is immersed in the first chemical liquid. At this time, the substrate W is immersed in the first chemical liquid, for example, in the same manner as in step S203 of the first embodiment or steps S1102 and S1103 of the fifth embodiment. In the fifth modified example, the substrate W is immersed in the first chemical liquid that has been stored in advance in the immersion tank 400, similar to step S203 of the first embodiment.

[0414] Then, when a predetermined time has elapsed since the start of immersion of the substrate W in the first chemical liquid, the control unit 102 controls the moving mechanism 300 to raise the substrate holder 200 and move the substrate W above the immersion tank 400. At this time, the upper surface Wa of the substrate W is covered with the first chemical liquid.

[0415] Next, step S1108 is executed in the same manner as in the fifth embodiment. Note that the substrate W is rotated with its upper surface Wa covered with the first chemical liquid. This prevents the upper surface Wa of the substrate W from drying, thereby preventing the generation of particles and the like.

[0416] Next, steps S1109 and S1110 are executed in the same manner as in the fifth embodiment, whereby the substrate W is rotated while being held by the lower substrate holding part 20.

[0417] Next, in step S1302, the substrate W is rinsed in the same manner as in step S1112 of the fifth embodiment.

[0418] Next, steps S1111 to S1116 are executed in the same manner as in the fifth embodiment.

[0419] In the fifth modified example, as described above, the rinse process is not performed at the processing position Q1. Therefore, similar to step S203 in the first embodiment, the substrate W can be immersed in the first chemical liquid stored in advance in the immersion tank 400. Therefore, it is not necessary to replace the processing liquid in the immersion tank 400 every time the substrate W is immersed. This makes it possible to further reduce the consumption of the processing liquid.

[0420] The other steps and other effects of the fifth modified example are similar to those of the fifth embodiment.

[0421] (Sixth embodiment) Next, a substrate processing apparatus 100 according to a sixth embodiment of the present invention will be described with reference to Figures 41 and 42. Figure 41 is a schematic plan view of a substrate processing unit 10 in the substrate processing apparatus 100 of the sixth embodiment. Figure 42 is a schematic view showing the structure around a cleaning tank 600 in the substrate processing apparatus 100 of the sixth embodiment. In the sixth embodiment, unlike the above embodiments, an example will be described in which a cleaning tank 600 is provided in the substrate processing unit 10.

[0422] 41 and 42, the substrate processing unit 10 has a cleaning tank 600. The cleaning tank 600 is a tank for cleaning the chuck pins 202 of the substrate holder 200. The cleaning tank 600 stores a rinse liquid (DIW in this case).

[0423] The cleaning tank 600 stores a rinse liquid. The cleaning tank 600 is a container-like tank with an open top, and accommodates some of the chuck pins 202. The chuck pins 202 of the substrate holding unit 200 are immersed in the rinse liquid stored in the cleaning tank 600 without holding a substrate W. As a result, the chuck pins 202 are cleaned by the rinse liquid. In this embodiment, the substrate holding unit 200 rotates the spin base 201 about the rotation axis AX1 with the chuck pins 202 immersed in the rinse liquid. This improves the cleaning effect on the chuck pins 202.

[0424] The cleaning tank 600 has a structure similar to that of the immersion tank 400. Specifically, the cleaning tank 600 has a bottom wall 601 and a side wall 602. The configurations of the bottom wall 601 and the side wall 602 are similar to the configurations of the bottom wall 401 and the side wall 402 of the immersion tank 400.

[0425] The substrate processing apparatus 100 includes an eighth supply unit 170. The eighth supply unit 170 is controlled by the control unit .

[0426] The eighth supply unit 170 supplies the rinse liquid to the cleaning tank 600. The eighth supply unit 170 supplies the rinse liquid from below the cleaning tank 600.

[0427] The eighth supply unit 170 has a structure similar to that of the third supply unit 70. Specifically, the eighth supply unit 170 has a rinse liquid pipe 171, an on-off valve 172, and a nozzle 178. The nozzle 178 is connected to the bottom wall 601 of the cleaning tank 600 and discharges the rinse liquid into the cleaning tank 600. Other configurations of the rinse liquid pipe 171, the on-off valve 172, and the nozzle 178 are similar to the configurations of the rinse liquid pipe 71, the on-off valve 72, and the nozzle 78 of the third supply unit 70.

[0428] The substrate processing apparatus 100 also includes a second discharge unit 60. The second discharge unit 60 is connected to the lower part of the cleaning tank 600. The second discharge unit 60 discharges the rinse liquid in the cleaning tank 600 to the outside of the cleaning tank 600.

[0429] The substrate processing unit 10 has a cleaning position CW. The cleaning position CW is provided in a chamber 11. In this embodiment, each chamber 11 is provided with a plurality of (here, three) processing positions Q, one transfer position R, and one cleaning position CW. The cleaning tank 600 is disposed in the cleaning position CW.

[0430] The processing positions Q, the transfer position R, and the cleaning position CW are located on a concentric circle C200. Therefore, by rotating about the rotation axis L200, the substrate holder 200 can transfer the substrate W to a member (here, the immersion tank 400) located at the processing position Q and to the transfer table 150 located at the transfer position R, and can also accommodate some of the chuck pins 202 in the cleaning tank 600 located at the cleaning position CW.

[0431] In this embodiment, the processing position Q1, processing position Q2, transfer position R, processing position Q3, and cleaning position CW are arranged in this order from one side to the other in the X direction. That is, the cleaning position CW and the cleaning tank 600 are arranged at the farthest position from the position (transfer position R) where the substrate W is transferred between the center robot CR and the cleaning tank 600. Note that in this embodiment, the distance from the transfer position R to the cleaning position CW is the same as the distance from the transfer position R to the processing position Q1.

[0432] In this embodiment, the substrate W is processed with a first chemical liquid at the processing position Q1, with a second chemical liquid at the processing position Q2, and with a rinse liquid at the processing position Q3.

[0433] Next, a substrate processing method according to this embodiment will be briefly described.

[0434] When the substrate W is carried into the transfer position R, the substrate holder 200 holds the substrate W at the transfer position R.

[0435] Then, the substrate holder 200 immerses the substrate W in the first chemical liquid at the processing position Q1, and releases the substrate W from its hold.

[0436] Thereafter, the substrate holder 200 immerses the chuck pins 202 in a rinse liquid at the cleaning position CW to clean the chuck pins 202 .

[0437] After holding the substrate W at the processing position Q1, the substrate holding part 200 immerses the substrate W in the rinse liquid at the processing position Q3 and then releases the substrate W from its holding state.

[0438] Thereafter, the substrate holder 200 immerses the chuck pins 202 in a rinse liquid at the cleaning position CW to clean the chuck pins 202 .

[0439] After holding the substrate W at the processing position Q3, the substrate holding part 200 immerses the substrate W in the second chemical liquid at the processing position Q2, and then releases the substrate W from its holding state.

[0440] Thereafter, the substrate holder 200 immerses the chuck pins 202 in a rinse liquid at the cleaning position CW to clean the chuck pins 202 .

[0441] After holding the substrate W at the processing position Q2, the substrate holder 200 immerses the substrate W in the rinse liquid at the processing position Q3, and then releases the substrate W from its holding state.

[0442] Thereafter, the substrate holder 200 immerses the chuck pins 202 in a rinse liquid at the cleaning position CW to clean the chuck pins 202 .

[0443] Then, the substrate holder 200 places the substrate W at the transfer position R after holding the substrate W at the processing position Q3.

[0444] Thereafter, the substrate holder 200 immerses the chuck pins 202 in a rinse liquid at the cleaning position CW to clean the chuck pins 202 .

[0445] In this manner, the substrate W is processed and the chuck pins 202 are cleaned.

[0446] Other aspects of the substrate processing method of the sixth embodiment are similar to those of the first to fifth embodiments.

[0447] As described above, this embodiment is provided with a cleaning tank 600 for cleaning the chuck pins 202 that hold the substrate W. This makes it possible to remove chemicals and the like adhering to the chuck pins 202. This makes it possible to prevent, for example, multiple chemicals from mixing in the immersion tank 400.

[0448] Other effects of the sixth embodiment are similar to those of the first to fifth embodiments.

[0449] Although the sixth embodiment has been described as an example in which one substrate W is processed, the present invention is not limited to this. For example, the same number of substrates W as the number of processing positions Q (here, two) can be processed in parallel.

[0450] In the sixth embodiment, an example has been described in which the chuck pins 202 are cleaned each time the substrate W is immersed in the chemical liquids (first chemical liquid, second chemical liquid) and the rinse liquid, but the present invention is not limited to this. For example, the chuck pins 202 may be cleaned only after the substrate W is immersed in the chemical liquids. Also, for example, the chuck pins 202 may be cleaned only after the substrate W is immersed in the rinse liquid. Also, for example, the chuck pins 202 may be cleaned each time processing of one substrate W is completed.

[0451] Seventh embodiment Next, a substrate processing apparatus 100 according to a seventh embodiment of the present invention will be described with reference to Fig. 43. Fig. 43 is a schematic plan view of a substrate processing unit 10 in the substrate processing apparatus 100 according to the seventh embodiment. In the seventh embodiment, unlike the first to sixth embodiments, a substrate holding part 200A is provided in addition to the substrate holding part 200 in the substrate processing unit 10.

[0452] As shown in FIG. 43, in this embodiment, there are multiple (four in this case) processing positions Q in the chamber 11. Similar to the third embodiment and the like, the multiple processing positions Q are located on a concentric circle C200 (not shown in FIG. 43). The multiple processing positions Q are arranged around approximately one circumference of the rotation axis L200. For example, the multiple processing positions Q are arranged at 90° intervals. In this embodiment, processing positions Q1, Q2, Q3, and Q4 are arranged in clockwise order. Furthermore, processing position Q4 is located closer to the opening 12 than the other three processing positions Q. In other words, processing position Q4 is located opposite the opening 12. Processing position Q4 is the position into which the substrate W is loaded.

[0453] In this embodiment, for example, at processing position Q1, the substrate W is processed using a first chemical liquid. Also, for example, at processing position Q2, the substrate W is processed using a rinse liquid. Also, for example, at processing position Q3, the substrate W is processed using a second chemical liquid. Also, at processing position Q4, the substrate W is processed using a rinse liquid.

[0454] In this embodiment, the substrate processing unit 10 is provided with a substrate holding part 200A in addition to the substrate holding part 200.

[0455] The substrate holding part 200A is rotatable about a pivot axis L200A. By rotating about the pivot axis L200A, the substrate holding part 200A can, for example, transfer a substrate W between processing positions Q3 and Q4. The pivot axis L200A is located on the opposite side of the pivot axis L200 with respect to a line (not shown) connecting processing positions Q3 and Q4. Furthermore, processing positions Q3 and Q4 are located on concentric circles centered on the pivot axis L200A.

[0456] The structure of the substrate holding part 200A is similar to that of the substrate holding part 200, and therefore a description thereof will be omitted. The substrate processing unit 10 is also provided with a moving mechanism (not shown) that moves the substrate holding part 200A. The structure of the moving mechanism that moves the substrate holding part 200A is similar to that of the moving mechanism 300 that moves the substrate holding part 200, and therefore a description thereof will be omitted.

[0457] Next, a brief description will be given of the substrate processing method of this embodiment. Note that the substrate holding parts 200 and 200A are appropriately retracted to positions where they do not interfere with (contact with) each other.

[0458] The substrate holder 200 receives the substrate W from the center robot CR at the processing position Q4 and holds the substrate W.

[0459] Then, the substrate holder 200 immerses the substrate W in the first chemical liquid at the processing position Q1.

[0460] Thereafter, the substrate holder 200 rinses the substrate W at the processing position Q2.

[0461] Then, the substrate holding part 200 immerses the substrate W in the second chemical liquid at the processing position Q3, and releases the hold on the substrate W. The substrate holding part 200 retreats to, for example, the processing position Q1.

[0462] Thereafter, the substrate holder 200A holds the substrate W at the processing position Q3, and then rinses the substrate W at the processing position Q4.

[0463] Then, the substrate holder 200A transfers the substrate W to the center robot CR at the processing position Q4.

[0464] In this manner, the substrate W is processed.

[0465] Other aspects of the substrate processing method of the seventh embodiment are similar to those of the first to sixth embodiments.

[0466] In this embodiment, as described above, the substrate W is handed over to the center robot CR by the substrate holder 200A that is not immersed in the first chemical liquid. Therefore, the substrate W can be transported out in a state where contamination of the substrate W is further suppressed.

[0467] Other effects of the seventh embodiment are similar to those of the first to sixth embodiments.

[0468] Although the seventh embodiment has been described with reference to an example in which one substrate W is processed, the present invention is not limited to this. A plurality of (for example, three) substrates W can be processed in parallel.

[0469] Furthermore, in the seventh embodiment, an example in which the transfer position R is not provided has been described, but the present invention is not limited to this. For example, the transfer position R may be provided between the processing positions Q1 and Q4. In this case, the substrate holding part 200 may move the substrate W from the transfer position R to the processing position Q4 via the processing positions Q1, Q2, and Q3, and the substrate holding part 200A may move the substrate W from the processing position Q4 to the transfer position R.

[0470] (Sixth Modification) Next, a substrate processing apparatus 100 according to a sixth modified example of the present invention will be described with reference to Fig. 44. Fig. 44 is a schematic diagram showing the substrate processing apparatus 100 according to the sixth modified example. Unlike the above-described embodiment, the sixth modified example describes an example in which the processing liquid in the immersion tank 400 is heated. Note that, although the following description will be given with some modifications to the first embodiment, the sixth modified example can also be applied to other embodiments, etc.

[0471] 44, the substrate processing apparatus 100 includes a heater 610 that heats the processing liquid. The heater 610 heats the processing liquid in the immersion tank 400. Specifically, the heater 610 is disposed, for example, inside the bottom wall 401 of the immersion tank 400. The heater 610 may be disposed, for example, so as to be in contact with the bottom surface of the bottom wall 401 of the immersion tank 400. The heater 610 is disposed, for example, around the entire circumference of the nozzle 48. The heater 610 heats the immersion tank 400, thereby heating the processing liquid stored in the immersion tank 400.

[0472] The control unit 102 controls the heater 610. The control unit 102 controls the heater 610 to heat the processing liquid in the immersion tank 400 to a predetermined temperature. Specifically, the control unit 102 controls the on / off of the heater 610 to maintain the processing liquid in the immersion tank 400 at the predetermined temperature. In this case, the substrate processing apparatus 100 has, for example, a temperature sensor (not shown) that measures the temperature of the immersion tank 400 or the temperature of the processing liquid. Note that in the sixth modification, the first supply unit 30 and the second supply unit 40 are preferably provided with heaters (not shown) that heat the processing liquid to a predetermined temperature.

[0473] In the sixth modification, as described above, by providing the heater 610 that heats the processing liquid in the immersion tank 400, it is possible to prevent a decrease in the temperature of the processing liquid in the immersion tank 400. Therefore, even when performing immersion processing for a long period of time, for example, it is possible to prevent a decrease in the temperature of the processing liquid. Furthermore, by heating the processing liquid in the immersion tank 400 to a predetermined temperature, it is possible to process the substrate W with the processing liquid at a constant temperature, for example.

[0474] Other configurations and other effects of the sixth modified example are similar to those of the first to seventh embodiments.

[0475] (Seventh Modification) Next, a substrate processing apparatus 100 according to a seventh modified example of the present invention will be described with reference to Fig. 45. Fig. 45 is a schematic diagram showing the substrate processing apparatus 100 according to the seventh modified example. Unlike the above-described embodiments, the seventh modified example will be described as an example in which a concentration sensor 630 is provided to detect the concentration of the processing liquid stored in the immersion tank 400.

[0476] In the seventh modification, for example, the substrate W is immersed in a processing liquid stored in advance in an immersion tank 400. In the seventh modification, the first supply unit 30 has a first chemical liquid pipe 31, a rinse liquid pipe 33, a common pipe 34, an on-off valve 35, an on-off valve 37, and a nozzle 38. Note that in the seventh modification, the second chemical liquid pipe 32 and the on-off valve 36 may or may not be provided.

[0477] In the seventh modification, the first chemical liquid is, for example, dilute hydrofluoric acid (DHF). The dilute hydrofluoric acid is a mixed liquid of hydrofluoric acid and DIW at a mixing ratio of, for example, 3:1. The dilute hydrofluoric acid is stored in the immersion tank 400. The second chemical liquid is, for example, hydrofluoric acid (HF). The concentration of the hydrofluoric acid is, for example, 49%.

[0478] In the seventh modification, the substrate processing apparatus 100 has a concentration sensor 630 and a fourth discharge unit 190. The fourth discharge unit 190 discharges the first chemical liquid stored in the immersion tank 400 to the outside of the immersion tank 400. Note that the first chemical liquid flows through the fourth discharge unit 190 when detecting the concentration of the first chemical liquid stored in the immersion tank 400.

[0479] The fourth discharge section 190 has a common pipe 191, a drainage pipe 192, a return pipe 193, an on-off valve 194, and an on-off valve 195. The common pipe 191, the drainage pipe 192, the return pipe 193, the on-off valve 194, and the on-off valve 195 have the same configurations as the common pipe 51, the drainage pipe 52, the return pipe 53, the on-off valve 54, and the on-off valve 55 of the first discharge section 50, and therefore a description thereof will be omitted.

[0480] The concentration sensor 630 detects the concentration of the first chemical liquid stored in the immersion tank 400. Specifically, the concentration sensor 630 is provided in the common pipe 191 of the fourth discharge unit 190. When the first chemical liquid in the immersion tank 400 passes through the common pipe 191, the concentration sensor 630 detects the concentration of the first chemical liquid. The detection result of the concentration sensor 630 is transmitted to the control unit 102.

[0481] The control unit 102 switches the on-off valve 194 from a closed state to an open state for a predetermined time, for example, when the substrate W is not being processed. As a result, the first chemical liquid in the immersion tank 400 passes through the common pipe 191, and the concentration sensor 630 detects the concentration of the first chemical liquid.

[0482] The control unit 102 determines whether the concentration of the first chemical liquid is within a predetermined range.

[0483] If the concentration of the first chemical liquid is lower than a predetermined range, the control unit 102 switches the on-off valve 46 from a closed state to an open state for a predetermined time. This causes the second chemical liquid (hydrofluoric acid) to be supplied into the immersion tank 400, and the concentration of the first chemical liquid in the immersion tank 400 increases. The time for which the on-off valve 46 is kept open is determined based on the concentration of the first chemical liquid.

[0484] On the other hand, if the concentration of the first chemical liquid is higher than the predetermined range, the control unit 102 switches the on-off valve 47 from a closed state to an open state for a predetermined time. This causes DIW to be supplied into the immersion tank 400, and the concentration of the first chemical liquid in the immersion tank 400 decreases. The time for which the on-off valve 47 is kept open is determined based on the concentration of the first chemical liquid.

[0485] In the eighth modification, when the second chemical liquid or DIW is supplied into the immersion tank 400, the control unit 102 immerses the chuck pin 202 in the immersion tank 400 and rotates it about the rotation axis AX1, thereby agitating the processing liquid in the immersion tank 400.

[0486] In the seventh modification, as described above, by providing a concentration sensor 630 that detects the concentration of the chemical liquid in the immersion tank 400, it is possible to determine whether the concentration of the chemical liquid in the immersion tank 400 is lower or higher than a predetermined range. Therefore, if the concentration of the chemical liquid in the immersion tank 400 decreases, the concentration of the chemical liquid can be increased. Also, if the concentration of the chemical liquid in the immersion tank 400 increases, the concentration of the chemical liquid can be decreased. Therefore, the substrate W can be treated with a chemical liquid having a concentration within a predetermined range.

[0487] Other configurations and other effects of the seventh modified example are similar to those of the first to seventh embodiments.

[0488] (Eighth Modification) Next, a substrate processing apparatus 100 according to an eighth modified example of the present invention will be described with reference to Figures 46 and 47. Figure 46 is a schematic diagram showing the substrate processing apparatus 100 according to the eighth modified example. In the eighth modified example, unlike the above-described embodiment, an example in which an outer cup 460 is provided will be described. Note that, although the following description will be given with some modifications to the first embodiment, the eighth modified example can also be applied to other embodiments.

[0489] As shown in FIG. 46, the substrate processing apparatus 100 includes a ninth supply unit 160 and a fifth supply unit 80.

[0490] The ninth supply unit 160 supplies the drying liquid to the substrate W. In the eighth modification, the ninth supply unit 160 supplies the drying liquid toward the upper surface Wa of the substrate W held by the substrate holding unit 200. The drying liquid is, for example, IPA (isopropyl alcohol).

[0491] The ninth supply unit 160 has a drying liquid pipe 161 and an on-off valve 162. The drying liquid pipe 161 is a tubular member through which the drying liquid flows. The drying liquid is supplied from a supply source to the drying liquid pipe 161. The downstream end of the drying liquid pipe 161 is connected to the nozzle 38. The drying liquid pipe 161 flows the drying liquid to the nozzle 38.

[0492] The on-off valve 162 is provided in the drying liquid pipe 161 and opens and closes the flow path in the drying liquid pipe 161. The on-off valve 162 adjusts the opening degree of the drying liquid pipe 161 to adjust the flow rate of the drying liquid supplied to the drying liquid pipe 161.

[0493] In the eighth modification, the nozzle 38 has a flow path through which the drying liquid passes, in addition to the flow path through which the liquid from the first supply unit 30 passes. The nozzle 38 ejects the drying liquid toward the upper surface Wa of the substrate W held by the substrate holding unit 200.

[0494] In the eighth modified example, the substrate processing apparatus 100 further includes an outer cup 460 on the outside of the cup 450. The outer cup 460 is arranged around the cup 450. In the eighth modified example, the outer cup 460, the cup 450, and the immersion tank 400 are integrally formed. In other words, the outer cup 460, the cup 450, and the immersion tank 400 are a single member.

[0495] The outer cup 460 is disposed outside the side wall 452 of the cup 450, at a predetermined distance from the side wall 452. Specifically, the outer cup 460 has a bottom wall 461 and a side wall 462. The bottom wall 461 is connected to the bottom wall 451 or the side wall 452 of the cup 450. The side wall 462 is connected to the peripheral edge of the bottom wall 461. The side wall 462 has a lower wall portion 462a and an upper wall portion 462b. The lower wall portion 462a extends upward from the bottom wall 461. The upper wall portion 462b is inclined inward and upward from the upper end of the lower wall portion 462a. The bottom wall 461 and side wall 462 of the outer cup 460 and the side wall 452 of the cup 450 form an inner space 460a of the outer cup 460.

[0496] The outer cup 460 collects the drying liquid scattered around the substrate W due to, for example, the rotation of the substrate W. The outer cup 460 is also connected to the gas exhaust unit 130, and the gas in the inner space 460a is exhausted to the outside of the chamber 11. The gas exhaust unit 130 includes, for example, an exhaust pipe and an exhaust fan disposed inside the exhaust pipe.

[0497] The substrate processing apparatus 100 has a third discharge unit 180. The third discharge unit 180 discharges the drying liquid in the exterior cup 460 to the outside of the exterior cup 460. In the eighth modification, the third discharge unit 180 discharges the drying liquid in the exterior cup 460 to the outside of the chamber 11. Specifically, the third discharge unit 180 has a drainage pipe 181 and an open / close valve 182. The third discharge unit 180 has the same configuration as the second discharge unit 60, and therefore a description thereof will be omitted.

[0498] The control unit 102 controls the ninth supply unit 160, the fifth supply unit 80, and the third discharge unit 180.

[0499] Next, a substrate processing method at one processing position Q according to the eighth modified example will be described with reference to Figures 46 and 47. Figure 47 is a flow chart of the substrate processing method at one processing position Q according to the eighth modified example. The substrate processing method by the substrate processing apparatus 100 according to the eighth modified example includes steps S201, S202, S1102 to S1106, S1201 to S1203, and S208.

[0500] As shown in Fig. 47, steps S201 and S202 are executed in the same manner as in the first embodiment. After step S202, the process proceeds to step S1102.

[0501] Next, steps S1102 to S1106 are executed in the same manner as in the fifth embodiment.

[0502] Next, in step S1401, the discharge of the rinsing liquid is stopped and the discharge of the drying liquid is started. Specifically, the control unit 102 switches the on-off valve 37 and the on-off valve 47 from an open state to a closed state, and switches the on-off valve 162 from a closed state to an open state. As a result, the supply of the rinsing liquid to the substrate W is stopped, but the drying liquid is supplied.

[0503] Next, in step S1402, the substrate W is raised. Specifically, as shown in Fig. 46, the control unit 102 moves the substrate holding unit 200 to a fourth height position P4 where the substrate W faces the side wall 462 of the outer cup 460 in the horizontal direction.

[0504] Next, in step S1403, gas is supplied to the substrate W. Specifically, the control unit 102 switches the on-off valve 162 from an open state to a closed state, and switches the on-off valve 82 from a closed state to an open state. As a result, the drying liquid is no longer supplied to the substrate W, but an inert gas is supplied. Then, the substrate W is dried.

[0505] When a predetermined time has elapsed since the supply of the inert gas started, the control unit 102 switches the on-off valve 82 from the open state to the closed state. Thereafter, the control unit 102 controls the substrate holding unit 200 to stop the rotation of the substrate W.

[0506] Next, step S208 is executed in the same manner as in the first embodiment.

[0507] Other configurations of the eighth modified example and other substrate processing methods are similar to those of the first to seventh embodiments.

[0508] In the eighth modification, as described above, the exterior cup 460 is provided around the cup 450, and when drying the substrate W, the substrate W is placed at a height position (fourth height position P4) horizontally facing the side wall 462 of the exterior cup 460. Therefore, the substrate W can be dried at a height position of the exterior cup 460 where the first chemical liquid and / or the second chemical liquid does not flow in. This makes it possible to prevent, for example, mist of the first chemical liquid and / or the second chemical liquid from adhering to the substrate W and causing adverse effects.

[0509] Other effects of the eighth modified example are similar to those of the first to seventh embodiments.

[0510] (Ninth Modification) Next, a substrate processing apparatus 100 according to a ninth modification of the present invention will be described with reference to Fig. 48. Fig. 48 is a schematic diagram showing a substrate processing apparatus 100 according to the ninth modification. In the ninth modification, unlike the first to seventh embodiments, an example will be described in which a brush 620 is provided in the immersion tank 400. Note that, although the following description will be given with some modifications to the first embodiment, the ninth modification can also be applied to embodiments other than the first embodiment.

[0511] 48, the substrate processing apparatus 100 has a brush 620. The brush 620 is disposed in the immersion bath 400. The brush 620 is provided to clean the lower surface Wb of the substrate W.

[0512] Brush 620 may include, for example, a porous material such as a sponge. Brush 620 may also include, for example, a resin such as polyvinyl alcohol (PVA). Brush 620 may also be configured by combining a plurality of members. Brush 620 may also include a plurality of bristles.

[0513] The brush 620 is fixed to the upper surface 401a of the bottom wall 401 of the immersion tank 400. The brush 620 comes into contact with the lower surface Wb of the substrate W to clean the lower surface Wb of the substrate W while the substrate W is immersed in the processing liquid stored in the immersion tank 400.

[0514] The brush 620 comes into contact with the rotating substrate W to clean the substrate W. The brush 620 is disposed, for example, on an extension of the rotation axis AX1 of the substrate holder 200. In other words, the brush 620 is disposed in an area including the center of the upper surface of the bottom wall 401 of the immersion tank 400. The brush 620 is disposed radially outward from the center of the bottom wall 401. The brush 620 is formed, for example, in a substantially fan-like, strip-like, or linear shape in plan view. In the ninth modification, the nozzle 48 is disposed at a position offset from the center of the bottom wall 401 of the immersion tank 400. The brush 620 may be formed, for example, in a circular shape in plan view.

[0515] In the ninth modified example, for example, in step S102 of the processing flow, the lower surface Wb of the substrate W is cleaned by the brush 620. At this time, in the ninth modified example, while the substrate W is being rotated by the substrate holder 200, the brush 620 comes into contact with the lower surface Wb of the substrate W to clean the lower surface Wb of the substrate W. Note that cleaning of the substrate W by the brush 620 does not have to be performed during processing with a chemical liquid, and may be performed during rinsing processing with a rinse liquid.

[0516] In the ninth modified example, as described above, the brush 620 is provided on the upper surface 401a of the bottom wall 401 of the immersion tank 400, and the brush 620 comes into contact with the lower surface Wb of the substrate W to clean the lower surface Wb of the substrate W while the substrate W is immersed in the processing liquid stored in the immersion tank 400. Therefore, since the brush 620 comes into contact with the substrate W while it is immersed in the processing liquid, the cleaning effect can be improved.

[0517] As described above, the substrate holder 200 rotates the substrate W with the lower surface Wb of the substrate W in contact with the brush 620. This further improves the cleaning effect. Furthermore, by rotating the substrate W, the brush 620 can easily clean substantially the entire lower surface Wb of the substrate W.

[0518] Other configurations, substrate processing methods, and effects of the ninth modified example are similar to those of the first to seventh embodiments.

[0519] (Tenth Modification) Next, a substrate processing apparatus 100 according to a tenth modified example of the present invention will be described with reference to Fig. 49. Fig. 49 is a schematic diagram showing the substrate processing apparatus 100 according to the tenth modified example. Unlike the ninth modified example, the tenth modified example describes an example in which a brush 620 is brought into contact with the upper surface Wa of the substrate W.

[0520] 49, the substrate processing apparatus 100 includes a brush 620, a brush holder 250 that holds the brush 620, and a brush moving mechanism 760 that moves the brush holder 250. The brush holder 250 and the brush moving mechanism 760 are controlled by the control unit 102.

[0521] In the tenth modification, the brush 620 is provided to clean the upper surface Wa of the substrate W. The brush 620 cleans the substrate W by coming into contact with the substrate W while rotating.

[0522] Brush holder 250 has spin base 251, shaft 253, electric motor 254, and housing 255. Brush 620 is attached to the lower surface of spin base 251. Brush 620 is arranged on an extension of rotation axis AX5 of shaft 253. In other words, brush 620 is arranged in an area including the center of the lower surface of spin base 251. In the tenth modification, brush 620 is attached to substantially the entire lower surface of spin base 251.

[0523] The spin base 251, shaft 253, electric motor 254 and housing 255 are configured in the same manner as the spin base 201, shaft 203, electric motor 204 and housing 205 of the substrate holder 200, and therefore description thereof will be omitted.

[0524] The brush moving mechanism 760 moves the brush holding part 250 separately from the substrate holding part 200. Specifically, the brush moving mechanism 760 moves the brush holding part 250 in the vertical direction. That is, the brush moving mechanism 760 raises and lowers the brush holding part 250. The brush moving mechanism 760 also rotates the brush holding part 250 about the rotation axis AX6. The brush moving mechanism 760 includes, for example, a ball screw mechanism and an electric motor that provides a driving force to the ball screw mechanism.

[0525] Specifically, the brush moving mechanism 760 may be configured similarly to the moving mechanism 300, for example. The brush moving mechanism 760 includes, for example, an elevator mechanism 770 that moves the brush holder 250 in the up-down direction and a pivot mechanism (not shown) that pivots the brush holder 250. The elevator mechanism 770 includes, for example, a screw shaft 771, a nut, an electric motor, and a drive belt (none of which are shown). The screw shaft 771 and the nut (not shown) form a ball screw mechanism. The screw shaft 771 extends vertically. The upper end of the screw shaft 771 is fixed to the housing 255 of the brush holder 250. The elevator mechanism 770 and the pivot mechanism (not shown) of the brush moving mechanism 760 are configured similarly to the elevator mechanism 310 and the pivot mechanism 320 of the moving mechanism 300, and therefore will not be described here.

[0526] The substrate processing apparatus 100 has a lower substrate holding part 800. The lower substrate holding part 800 is controlled by the control part 102. The lower substrate holding part 800 holds the substrate W horizontally. Specifically, the lower substrate holding part 800 has a base 801 and a chuck member 802.

[0527] The base 801 is placed in the immersion tank 400. The base 801 has a generally cylindrical shape. An upper surface 801a of the base 801 extends horizontally. The lower surface Wb of the substrate W comes into contact with the upper surface 801a of the base 801. The base 801 is formed at a height such that the upper surface Wa of the substrate W is lower than the liquid level of the processing liquid when the substrate W is placed on the upper surface 801a.

[0528] The chuck member 802 is provided on the base 801. The chuck member 802 chucks the substrate W. For example, the chuck pin 802a transfers the substrate W between the chuck pin 802a and the chuck pin 202 of the substrate holder 200. In addition, in the tenth modification, when the chuck member 802 chucks the substrate W, the lower surface Wb of the substrate W contacts the upper surface 801a of the base 801 or is slightly separated from the upper surface 801a of the base 801.

[0529] A plurality of chuck members 802 are provided on the base 801. Each chuck member 802 has a chuck pin 802a protruding upward from the base 801, a driven portion 802b, and a connecting shaft 802c. The connecting shaft 802c connects the chuck pin 802a and the driven portion 802b. The connecting shaft 802c extends horizontally. The chuck pin 802a, the driven portion 802b, and the connecting shaft 802c may be formed of separate members or may be formed of a single member.

[0530] The chuck pin 802a has a pin-shaped portion and a contact portion that is provided at the upper end of the pin-shaped portion and that comes into contact with the peripheral edge of the substrate W. The follower portion 802b is moved up and down by a chuck driving mechanism 810, which will be described later. Specifically, the follower portion 802b swings around a connecting shaft 802c.

[0531] Furthermore, the driven part 802b is fixed to the connecting shaft 802c, and the chuck pin 802a is fixed to the connecting shaft 802c. Therefore, the driven part 802b and the chuck pin 802a swing together. Therefore, when the driven part 802b swings around the connecting shaft 802c, the chuck pin 802a swings around the connecting shaft 802c. In the tenth modification, when the driven part 802b swings up and down, the chuck pin 802a swings in the radial direction of the substrate W. When the chuck pin 802a swings inward in the radial direction of the substrate W, the chuck pin 802a comes into contact with the substrate W and holds the substrate W. On the other hand, when the chuck pin 802a swings outward in the radial direction of the substrate W, the chuck pin 802a moves away from the substrate W and releases its hold on the substrate W.

[0532] Although not shown, the base 801 has an internal space formed therein in which the follower part 802b can swing.

[0533] The substrate processing apparatus 100 includes a chuck driving mechanism 810 that swings the chuck pins 802a. The chuck driving mechanism 810 is controlled by the control unit 102. The chuck driving mechanism 810 includes a driving magnet 811, a driven magnet 812, and a lifting plate 813.

[0534] The driving magnet 811 is disposed below the driven part 802b of the chuck member 802. For example, the driving magnet 811 is disposed below the base 801 or between the base 801 and the support plate 502. In the tenth modification, an accommodation space 400b is formed below the immersion tank 400, and the driving magnet 811 is accommodated in the accommodation space 400b. In a plan view, the driving magnet 811 is disposed around the entire circumference of the center line (not shown) of the base 801.

[0535] The lifting plate 813 supports the driving magnet 811. Specifically, the lifting plate 813 is a circular plate. The driving magnet 811 is fixed to the lifting plate 813 along its entire circumference. The lifting plate 813 is housed in the housing space 400b. The lifting plate 813 is moved up and down relative to the immersion tank 400 by a lifting mechanism (not shown).

[0536] The driven magnet 812 is fixed to the driven part 802b. The driven magnet 812 is disposed directly above the drive magnet 811. The driven magnet 812 is also disposed so as to repel the drive magnet 811. Specifically, the driven magnet 812 and the drive magnet 811 are disposed so that the surfaces facing each other have the same polarity.

[0537] When the lifting plate 813 and the drive magnet 811 move upward, the driven magnet 812 swings upward. As a result, the chuck pin 802a swings radially outward from the substrate W. On the other hand, when the lifting plate 813 and the drive magnet 811 move downward, the driven magnet 812 swings downward due to its own weight. As a result, the chuck pin 802a swings radially inward from the substrate W.

[0538] In the tenth modified example, for example, in step S102 of the processing flow, the lower surface Wb of the substrate W is cleaned by the brush 620. At this time, in the tenth modified example, with the substrate W held by the lower substrate holding part 800, the brush 620 rotates and comes into contact with the upper surface Wa of the substrate W to clean the upper surface Wa of the substrate W.

[0539] In the tenth modification, as described above, by providing the brush holding part 250 and the lower substrate holding part 800, the upper surface Wa of the substrate W can be easily cleaned.

[0540] The other substrate processing methods and other effects of the tenth modification are similar to those of the ninth modification.

[0541] (Eleventh Modification) Next, a substrate processing apparatus 100 according to an eleventh modified example of the present invention will be described with reference to Fig. 50. Fig. 50 is a schematic diagram showing a substrate processing apparatus 100 according to the eleventh modified example. In the eleventh modified example, unlike the tenth modified example, a brush 620 is attached to the substrate holding part 200.

[0542] 50, the substrate processing apparatus 100 has a brush 620. In the eleventh modification, the brush 620 is fixed to the lower surface of the spin base 201 of the substrate holding unit 200. That is, the brush 620 is held by the substrate holding unit 200 and moved by the moving mechanism 300. Note that in the eleventh modification, the brush holding unit 250 and the brush moving mechanism 760 are not provided.

[0543] Similar to the tenth modification, the brush 620 is provided to clean the upper surface Wa of the substrate W. The brush 620 cleans the substrate W by coming into contact with the substrate W while rotating.

[0544] Brush 620 is attached to almost the entire bottom surface of spin base 201. In FIG. 50, brush 620 is not provided in the center of spin base 201 to avoid nozzle 38, but it is possible to provide brush 620 in the center of spin base 201 by adjusting, for example, the shape or inner diameter of the outlet of nozzle 38. If brush 620 is not provided in the center of spin base 201, spin base 201 can be moved horizontally while rotating brush 620.

[0545] In the eleventh modification, similarly to the tenth modification, a lower substrate holding part 800 and a heater 610 are provided. The heater 610 is disposed inside the base 801 of the lower substrate holding part 800, for example.

[0546] In the eleventh modification, an exterior cup 460 and a third discharge portion 180 are provided, similarly to the eighth modification.

[0547] In the eleventh modification, as described above, the brush 620 is fixed to the spin base 201 of the substrate holding unit 200. Therefore, unlike the tenth modification, there is no need to provide the brush holding unit 250 that holds the brush 620 and the brush moving mechanism 760 that moves the brush holding unit 250. This simplifies the device configuration.

[0548] The other substrate processing methods and other effects of the eleventh modified example are similar to those of the first to seventh embodiments.

[0549] (12th Modification) Next, a substrate processing apparatus 100 according to a twelfth modified example of the present invention will be described with reference to Fig. 51. Fig. 51 is a schematic diagram showing the substrate processing apparatus 100 according to the twelfth modified example. In the twelfth modified example, unlike the first to seventh embodiments, an example will be described in which the substrate processing apparatus 100 has a lid 710. Note that, although the following description will be given with some modifications to the sixth modified example, the twelfth modified example can also be applied to embodiments other than the sixth modified example.

[0550] 51, the substrate processing apparatus 100 has a lid 710 and a lid moving mechanism 750 that moves the lid 710. The lid 710 covers the inner peripheral edge 452c of the cup 450. Specifically, the cup 450 has the inner peripheral edge 452c that forms an opening through which the substrate W can pass. The inner peripheral edge 452c is formed by the upper end of the upper wall portion 452b of the side wall 452.

[0551] The lid 710 has, for example, a plate 711 in the form of a plate and a cylindrical portion 712. The plate 711 has, for example, a circular shape. The cylindrical portion 712 protrudes downward from the lower surface of the plate 711.

[0552] The plate 711 has a diameter larger than the diameter of the inner peripheral edge 452c of the cup 450. When placed on the cup 450, the plate 711 covers the upper part of the inner peripheral edge 452c. The cylindrical portion 712 has a diameter (outer diameter) smaller than the diameter of the inner peripheral edge 452c of the cup 450. When inserted inside (radially inward) the cup 450, the cylindrical portion 712 covers the inside of the inner peripheral edge 452c. In the twelfth modified example, the cylindrical portion 712 is formed in the up-down direction from the upper end of the side wall 452 of the cup 450 to the upper end of the side wall 402 of the immersion tank 400.

[0553] The lid moving mechanism 750 moves the lid 710 separately from the substrate holder 200. Specifically, the lid moving mechanism 750 moves the lid 710 in the vertical direction. That is, the lid moving mechanism 750 raises and lowers the lid 710. The lid moving mechanism 750 also rotates the lid 710 about a rotation axis AX7. The lid moving mechanism 750 includes, for example, a ball screw mechanism and an electric motor that provides a driving force to the ball screw mechanism.

[0554] Specifically, the lid moving mechanism 750 may be configured similarly to, for example, the moving mechanism 300. The lid moving mechanism 750 has, for example, a support 751 that supports the lid 710, and a screw shaft 752. The lid moving mechanism 750 also has a nut, an electric motor, a drive belt, and a shaft cover (none of which are shown). The screw shaft 752, nut, electric motor, drive belt, and shaft cover of the lid moving mechanism 750 are configured similarly to those of the moving mechanism 300, so their description will be omitted. The lid moving mechanism 750 also has a turning mechanism (not shown) that turns the screw shaft 752 and the drive motor around a rotation axis AX7, which is the central axis of the screw shaft 752. This makes it possible to retract the lid 710 from a position directly above the substrate W.

[0555] Furthermore, the cup 450 is connected to the gas exhaust part 130, and the gas in the inner space 450a is exhausted to the outside of the chamber 11.

[0556] In the twelfth modified example, for example, in step S102 of the processing flow, the control unit 102 controls the substrate holding unit 200 to place the substrates W on the multiple support stages 410. As a result, the substrates W are immersed in the processing liquid stored in the immersion tank 400. The control unit 102 also controls the substrate holding unit 200 to retract the substrate holding unit 200 upward from the cup 450.

[0557] Then, the control unit 102 controls the lid moving mechanism 750 to place the lid 710 on the cup 450 .

[0558] In the twelfth modification, as described above, the substrate processing apparatus 100 includes the lid 710 that covers the inner peripheral edge 452c of the cup 450. This prevents gas above the immersion tank 400 from being drawn into the inner space 450a of the cup 450. This prevents the temperature of the processing liquid in the immersion tank 400 from decreasing due to the airflow drawn into the inner space 450a.

[0559] As described above, the lid moving mechanism 750 is provided to move the lid 710 separately from the substrate holder 200. Therefore, the lid 710 can be easily moved so as to cover the inner peripheral edge 452c of the immersion tank 400.

[0560] Other configurations, substrate processing methods, and effects of the twelfth modified example are similar to those of the first to seventh embodiments.

[0561] (13th Modification) Next, a substrate processing apparatus 100 according to a thirteenth modified example of the present invention will be described with reference to Fig. 52. Fig. 52 is a schematic diagram showing the substrate processing apparatus 100 according to the thirteenth modified example. Unlike the twelfth modified example, the thirteenth modified example describes an example in which a lid 720 is used to suppress a decrease in the temperature of the processing liquid while the substrate W is held by the substrate holder 200.

[0562] 52, the substrate processing apparatus 100 includes a lid 720 and a lid moving mechanism 750 that moves the lid 720. The lid 720 covers the inner peripheral edge 452c of the cup 450. Specifically, the lid 720 has a cylindrical shape. The lid 720 extends in the vertical direction.

[0563] The lid 720 has a diameter (outer diameter) smaller than the inner peripheral edge 452c of the cup 450. When inserted inside (radially inward) of the cup 450, the lid 720 covers the inside of the inner peripheral edge 452c. The lid 720 is formed in the up-down direction from the upper end of the side wall 452 of the cup 450 to the upper end of the side wall 402 of the immersion tank 400. In other words, the lid 720 covers the inlet of the inner space 450a.

[0564] Furthermore, the lid 720 has an inner diameter larger than the diameter of the spin base 201. This allows the spin base 201 to be placed inside the lid 720. The rest of the configuration of the lid 720 is the same as that of the cylindrical portion 712 of the lid 710.

[0565] The lid moving mechanism 750 moves the lid 720. Specifically, the lid moving mechanism 750 moves the lid 720 in the vertical direction. That is, the lid moving mechanism 750 raises and lowers the lid 720. The lid moving mechanism 750 also rotates the lid 720 about the rotation axis AX7. The support portion 751 of the lid moving mechanism 750 is fixed to, for example, the outer peripheral surface of the lid 720. The other configuration of the lid moving mechanism 750 is the same as that of the twelfth modified example.

[0566] In the thirteenth modified example, unlike the twelfth modified example, the immersion tank 400 is not provided with a support stand 410 .

[0567] In the thirteenth modified example, for example, prior to step S102 or the like of the processing flow, the control unit 102 controls the lid moving mechanism 750 to insert the lid 720 into the inside of the cup 450. As a result, in step S102 or the like, the lid 720 covers the inside of the inner peripheral edge 452c of the cup 450, and the substrate W is immersed in the processing liquid while being held by the substrate holding unit 200.

[0568] The other configurations, substrate processing methods, and effects of the thirteenth modified example are similar to those of the twelfth modified example.

[0569] (14th Modification) Next, a substrate processing apparatus 100 according to a fourteenth modification of the present invention will be described with reference to Fig. 53. Fig. 53 is a schematic diagram showing the substrate processing apparatus 100 according to the fourteenth modification. In the fourteenth modification, unlike the twelfth and thirteenth modifications, an example will be described in which a lid moving mechanism 750 is not provided.

[0570] As shown in FIG. 53, the substrate processing apparatus 100 has a lid 730. Unlike the thirteenth modification, the fourteenth modification does not include a lid moving mechanism 750. The lid 730 covers the inner peripheral edge 452c of the cup 450. The upper end of the lid 730 is fixed to the housing 205 of the substrate holder 200. In the fourteenth modification, the lid 730 surrounds the periphery of the spin base 201. Other configurations of the lid 730 are the same as those of the lid 720 of the thirteenth modification.

[0571] In the fourteenth modification, for example, in step S102 of the processing flow, the lid 730 covers the inside of the inner periphery 452c of the cup 450, and the substrate W held by the substrate holder 200 is immersed in the processing liquid.

[0572] In the fourteenth modification, as described above, the lid 730 is provided on the substrate holder 200. Therefore, there is no need to provide a lid moving mechanism 750 for moving the lid 730.

[0573] The other configurations, substrate processing methods, and effects of the fourteenth modification are similar to those of the thirteenth modification.

[0574] (15th Modification) Next, a substrate processing apparatus 100 according to a fifteenth modified example of the present invention will be described with reference to Fig. 54. Fig. 54 is a schematic diagram showing the substrate processing apparatus 100 according to the fifteenth modified example. In the fifteenth modified example, unlike the twelfth to fourteenth modified examples, an example will be described in which the spin base 201 also serves as a lid. Note that, although the following description will be given with some modifications to the fourteenth modified example, the fifteenth modified example can also be applied to embodiments other than the fourteenth modified example.

[0575] 54, the spin base 201 of the substrate holding unit 200 also serves as a lid. Unlike the twelfth to fourteenth modifications, the fifteenth modification does not include the lids 710 to 730 or the lid moving mechanism 750 in the substrate processing apparatus 100. In the fifteenth modification, the spin base 201 covers the inner peripheral edge 452c of the cup 450. In the fifteenth modification, the spin base 201 has a diameter (outer diameter) slightly smaller than the inner diameter of the inner peripheral edge 452c of the cup 450. Therefore, the gap between the outer peripheral surface of the spin base 201 and the inner peripheral edge 452c of the cup 450 in the fifteenth modification is smaller than the gap between the outer peripheral surface of the spin base 201 and the inner peripheral edge 452c of the cup 450 in the sixth modification.

[0576] In the fifteenth modification, as described above, the spin base 201 also serves as the lid, so that an increase in the number of parts can be suppressed.

[0577] The other configurations, substrate processing methods, and effects of the fifteenth modification are the same as those of the fourteenth modification.

[0578] (16th Modification) Next, a substrate processing apparatus 100 according to a sixteenth modification of the present invention will be described with reference to Fig. 55. Fig. 55 is a schematic plan view of a substrate processing unit 10 in the substrate processing apparatus 100 according to the sixteenth modification. Unlike the first to seventh embodiments, the sixteenth modification describes an example in which a damming member 960 is provided to block the processing liquid on the upper surface Wa of the substrate W.

[0579] 55, the substrate processing unit 10 includes a processing tank 900. The processing tank 900 prevents the processing liquid from scattering around. Unlike the immersion tank 400, the processing tank 900 does not store the processing liquid.

[0580] The processing tank 900 has the same structure as the immersion tank 400. Specifically, the processing tank 900 has a bottom wall 901 and a side wall 902. The configurations of the bottom wall 901 and the side wall 902 are the same as the configurations of the bottom wall 401 and the side wall 402 of the immersion tank 400.

[0581] The processing tank 900 has support columns 911. The support columns 911 support the substrate W. Specifically, the support columns 911 support the lower surface Wb of the substrate W delivered from the substrate holder 200. The support columns 911 protrude above the upper surface of the bottom wall 901. The support columns 911 are not particularly limited, but may have, for example, a cylindrical shape. A plurality of the support columns 911 are provided on the bottom wall 901. The plurality of support columns 911 are arranged, for example, on the periphery of the bottom wall 901. The support columns 911 and the bottom wall 901 may be formed integrally.

[0582] The substrate processing unit 10 also includes a damming mechanism 950. The damming mechanism 950 includes a damming member 960 and a lifting mechanism 970 that moves the damming member 960 up and down.

[0583] The damming member 960 blocks the processing liquid on the upper surface Wa of the substrate W. In other words, the damming member 960 prevents the processing liquid from overflowing from the upper surface Wa of the substrate W. Specifically, the damming member 960 has a ring-shaped contact portion 961 and a support plate 962 that supports the contact portion 961.

[0584] The contact portion 961 contacts the periphery of the substrate W around the entire circumference. The contact portion 961 protrudes upward from the support plate 962. In the sixteenth modified example, the contact portion 961 has a cylindrical shape. The upper surface of the contact portion 961 is an inclined surface that extends upward radially outward. A lower portion of the upper surface of the contact portion 961 contacts the substrate W and holds the substrate W. At least an upper portion of the upper surface of the contact portion 961 blocks the processing liquid.

[0585] The support plate 962 is, for example, a plate member having a circular shape. The support plate 962 is arranged horizontally. The support plate 962 horizontally supports the contact portion 961. The support plate 962 also has a through-hole 962a through which the support post 911 is inserted. The support plate 962 is configured to be able to move up and down along the support post 911.

[0586] The lifting mechanism 970 is not particularly limited, but may include, for example, a shaft 971 and an actuator (not shown) that moves the shaft 971 in the up and down direction. The lifting mechanism 970 also includes a case 972 that houses the actuator and the like, and a bellows part 973 that covers the periphery of the shaft 971 and is expandable and contractible in the vertical direction. The upper end of the shaft 971 is fixed to the lower surface of the support plate 962 of the damming member 960. The lifting mechanism 970 may be configured similarly to the lifting mechanism 310 of the movement mechanism 300, for example.

[0587] Next, a substrate processing method using the damming member 960 of the sixteenth modification will be briefly described.

[0588] The substrate holder 200 places the substrate W that it is holding onto the support columns 911, and releases the hold on the substrate W. Then, the substrate holder 200 retreats upward. At this time, the damming member 960 is in a lowered state.

[0589] Then, the lifting mechanism 970 lifts the damming member 960. As a result, the contact portion 961 of the damming member 960 comes into contact with the periphery of the substrate W over one circumference.

[0590] Thereafter, the first supply unit 30 stops discharging the chemical liquid after discharging the chemical liquid onto the upper surface Wa of the substrate W for a predetermined time, thereby causing the upper surface Wa of the substrate W to be covered with the chemical liquid.

[0591] Then, when a predetermined time has elapsed since the chemical solution was discharged onto the upper surface Wa of the substrate W, the lifting mechanism 970 lowers the damming member 960. As a result, the substrate W is transferred from the damming member 960 to the support column 911.

[0592] Thereafter, the substrate holder 200 holds the substrate W and transports the substrate W to another processing position Q.

[0593] In this manner, the substrate W is processed using the damming member 960.

[0594] Other aspects of the substrate processing method of the sixteenth modification are similar to those of the first to seventh embodiments.

[0595] In the sixteenth modification, as described above, the damming member 960 is provided, thereby making it possible to prevent the chemical liquid on the upper surface Wa of the substrate W from dropping from the substrate W.

[0596] Other effects of the sixteenth modified example are similar to those of the first to seventh embodiments.

[0597] (17th Modification) Next, a substrate processing apparatus 100 according to a seventeenth modification of the present invention will be described with reference to Fig. 56. Fig. 56 is a schematic plan view of the substrate processing unit 10 in the substrate processing apparatus 100 of the seventeenth modification. Unlike the sixteenth modification, the seventeenth modification describes an example in which the lower surface Wb of the substrate W is processed.

[0598] 56, the substrate processing unit 10, like the sixteenth modification, has a processing tank 900. However, unlike the sixteenth modification, the processing tank 900 does not have the support columns 911.

[0599] The substrate processing unit 10 has a substrate processing stage 980 that supports a substrate W. The substrate processing stage 980 has a table 981 that supports the substrate W, and a protrusion 982.

[0600] The table 981 has, for example, a circular shape in a plan view. The table 981 has an upper surface 981a. The upper surface 981a has, for example, a diameter slightly larger than that of the substrate W. Although not particularly limited, in the seventeenth modified example, the table 981 is formed in a substantially T-shape in a side view.

[0601] The protrusion 982 is provided on the upper surface 981a of the table 981. The protrusion 982 protrudes upward from the upper surface 981a of the table 981. The protrusion 982 supports the substrate W. Specifically, the protrusion 982 supports the lower surface Wb of the substrate W handed over from the substrate holder 200. The protrusion 982 is not particularly limited, but may have, for example, a cylindrical shape. Furthermore, a plurality of protrusions 982 are provided on the upper surface 981a. The plurality of protrusions 982 are arranged, for example, on the peripheral portion of the bottom wall 901. Note that the protrusions 982 and the table 981 may be formed integrally.

[0602] Here, the protrusions 982 are formed to a predetermined height. In the seventeenth modification, the processing liquid is held between the upper surface 981a of the table 981 and the lower surface Wb of the substrate W. The height of the protrusions 982 is, for example, equal to or less than the thickness of the processing liquid when the processing liquid is held by surface tension. Specifically, the height of the protrusions 982 is equal to or greater than several hundred μm and equal to or less than several mm.

[0603] In the seventeenth modification, the nozzle 48 of the second supply unit 40 passes through the table 981 in the vertical direction. Therefore, the nozzle 48 can eject the processing liquid onto the upper surface 981a of the table 981.

[0604] Next, a substrate processing method using the substrate processing table 980 of the seventeenth modification will be briefly described.

[0605] The substrate holding part 200 places the substrate W that it is holding on the substrate processing stage 980. At this time, the substrate W may be placed on the substrate processing stage 980 in a state where a chemical liquid is present on the substrate processing stage 980. Alternatively, the substrate W may be placed on the substrate processing stage 980 in a state where no chemical liquid is present on the substrate processing stage 980, and the chemical liquid may be supplied between the lower surface Wb of the substrate W and the upper surface 981a of the substrate processing stage 980 while the substrate holding part 200 holds the substrate W.

[0606] Then, the substrate holder 200 releases the hold of the substrate W. As a result, the substrate W is held by the surface tension of the chemical liquid or the protrusions 982. At this time, the lower surface Wb of the substrate W is covered with the chemical liquid.

[0607] Then, when a predetermined time has elapsed since the chemical liquid came into contact with the lower surface Wb of the substrate W, the substrate holding part 200 holds the substrate W.

[0608] Thereafter, the substrate holding part 200 holds the substrate W and transports the substrate W to another processing position Q. At this time, a chemical liquid may be discharged from the nozzle 48. With this configuration, it becomes easier to move the substrate W upward from the substrate processing table 980.

[0609] In this manner, the substrate W is processed using the substrate processing table 980.

[0610] Other aspects of the substrate processing method of the seventeenth modification are similar to those of the first to seventh embodiments.

[0611] In the seventeenth modification, as described above, by providing the substrate processing stage 980 having the protrusions 982, for example, only the lower surface Wb of the substrate W can be processed with a chemical solution.

[0612] Other effects of the seventeenth modified example are similar to those of the sixteenth modified example and the like.

[0613] The embodiments of the present invention have been described above with reference to the drawings. However, the present invention is not limited to the above embodiments and can be embodied in various forms without departing from the spirit and scope of the present invention. Furthermore, various inventions can be formed by appropriately combining multiple components disclosed in the above embodiments. For example, some components may be omitted from all components shown in the embodiments. Furthermore, components from different embodiments may be appropriately combined. The drawings mainly show each component in a schematic manner to facilitate understanding. The thickness, length, number, spacing, etc. of each component shown may differ from the actual thickness, length, number, spacing, etc. of each component shown in the above embodiments due to the convenience of drawing. Furthermore, the materials, shapes, dimensions, etc. of each component shown in the above embodiments are merely examples and are not particularly limited. Various modifications are possible within a scope that does not substantially deviate from the effects of the present invention.

[0614] For example, in the above-described embodiment and the like, an example has been described in which the lifting mechanism 310 moves the substrate holding unit 200, but the present invention is not limited to this. For example, the lifting mechanism 310 may move the immersion tank 400. In other words, the lifting mechanism 310 may move the substrate holding unit 200 and the immersion tank 400 relative to each other. In this case, the lifting mechanism 310 may move either the substrate holding unit 200 or the immersion tank 400, or may move both the substrate holding unit 200 and the immersion tank 400.

[0615] Furthermore, for example, in the fifth embodiment, an example has been described in which the substrate W is rotated when the processing liquid is discharged onto the substrate W, but the present invention is not limited to this. The substrate W does not have to be rotated when the processing liquid is discharged onto the substrate W.

[0616] Furthermore, for example, in the first embodiment, an example has been described in which a drying liquid and a gas are not discharged onto the substrate W when drying the substrate W, but the present invention is not limited to this. In the first embodiment etc., a drying liquid and / or a gas may be discharged when drying the substrate W.

[0617] In the above-described embodiments, the first chemical liquid, the second chemical liquid, and the rinse liquid are ejected from the same nozzle (for example, nozzle 38, nozzle 48), but the present invention is not limited to this. For example, a nozzle for ejecting the first chemical liquid, a nozzle for ejecting the second chemical liquid, and a nozzle for ejecting the rinse liquid may be provided separately.

[0618] In the above-described embodiment and the like, an example has been described in which the chuck pin 202 is driven by the chuck driving mechanism 210 having the driving magnet 211, the driven magnet 212, and the lifting plate 213, but the present invention is not limited to this. The chuck driving mechanism that drives the chuck pin 202 is not particularly limited. For example, a motor (chuck driving mechanism) that rotates the chuck pin 202 may be provided in the spin base 201.

[0619] Furthermore, for example, in the twelfth to fifteenth modifications, examples have been described in which the lid 710, 720, 730, or spin base 201 is used to suppress a decrease in the temperature of the processing liquid, but the present invention is not limited to this. For example, the flow path of the exhaust pipe of gas exhaust unit 130 may be closed, or the exhaust fan may be stopped. In this case, too, gas can be prevented from being drawn into inner space 450a of cup 450, thereby suppressing a decrease in the temperature of the processing liquid in immersion tank 400.

[0620] Furthermore, for example, in the fifth embodiment, an example has been described in which the processing liquid is stored in the immersion tank 400 by being discharged toward the substrate W, but the present invention is not limited to this. For example, in other embodiments and modifications, the processing liquid may be stored in the immersion tank 400 by being discharged toward the substrate W.

[0621] Furthermore, for example, in the sixth embodiment, an example has been described in which the chuck pin 202 is cleaned by immersing the chuck pin 202 in the rinse liquid stored in the cleaning tank 600, but the present invention is not limited to this. For example, the chuck pin 202 may be cleaned by spraying the rinse liquid onto the chuck pin 202 using a spray nozzle.

[0622] Furthermore, for example, in the tenth and eleventh modifications, an example has been described in which the chuck member 802 is provided to hold the substrate W by swinging about a connecting shaft 802c extending in the horizontal direction, but the present invention is not limited to this. For example, the chuck member 802 may be configured to hold the substrate W by rotating about an axis extending in the vertical direction, similar to the chuck pin 202 of the substrate holder 200.

[0623] In the above-described embodiment, the substrate W is processed in a horizontal state, but the present invention is not limited to this. For example, the substrate W may be processed in a vertical or tilted state. [Industrial Applicability]

[0624] The present invention is suitably used in a substrate processing apparatus. [Explanation of symbols]

[0625] 11: Chamber 12: Opening (entrance / exit) 30: First supply unit (processing liquid supply unit) 40: Second supply unit (processing liquid supply unit) 100: Substrate processing apparatus 150: Transfer table (support member) 200, 200A: Board holding part 201: Spin Base (Base) 202: Zipper pin 310: Lifting mechanism 320: Swivel mechanism 400: Immersion tank 410: Support stand C200: Concentric circles L200, L200A: Rotation axis Q: Processing position Q1: Processing position Q2: Processing position Q3: Processing position Q4: Processing position R: Handover position (support position) W: Substrate

Claims

1. a chamber having an entrance / exit through which the substrate is loaded and unloaded, the entrance / exit communicating the inside and outside of the chamber; a substrate holder disposed in the chamber and configured to hold the substrates one by one; a rotation mechanism that rotates the substrate holder to move the substrate holder among a plurality of processing positions in the chamber where the substrate is processed with a processing liquid; A substrate processing apparatus comprising:

2. The substrate processing apparatus according to claim 1 , further comprising an immersion tank disposed at the processing position, for storing the processing liquid, and for accommodating the substrate and immersing the substrate in the processing liquid.

3. The substrate processing apparatus according to claim 2 , wherein the immersion tank is provided with a support table for supporting the substrate.

4. the substrate holder pivots about a pivot axis; 4. The substrate processing apparatus according to claim 1, wherein the plurality of processing positions are positioned on concentric circles centered on the pivot axis.

5. The substrate processing apparatus according to claim 4 , wherein the substrate holder is capable of rotating one or more revolutions about the rotation axis.

6. The plurality of processing positions are provided in a number of three or more, The substrate processing apparatus according to claim 5 , wherein the substrate holder transports the substrate to the plurality of processing positions in sequence in a predetermined rotation direction about the rotation axis.

7. a support member disposed inside the chamber and supporting the substrate; a support position in which the support member is disposed is provided inside the chamber; the support position is located closer to the entrance than the plurality of processing positions; 4. The substrate processing apparatus according to claim 1, wherein the substrate holder transports the substrate from the support position to the processing position.

8. the plurality of processing positions include a first processing position and a second processing position; treating the substrate with a first treatment liquid at the first treatment position; 4. The substrate processing apparatus according to claim 1, wherein the substrate is processed at the second processing position with a second processing liquid that is different from the first processing liquid.

9. the treatment liquid includes a chemical solution, 4. The substrate processing apparatus according to claim 1, wherein the plurality of processing positions include at least two processing positions that process the substrate with the same chemical solution.

10. The substrate processing apparatus according to claim 9 , wherein the entrance is provided for each of the at least two processing positions.

11. the plurality of processing positions include a first processing position, a second processing position, and a third processing position; the processing liquid includes a first chemical liquid, a second chemical liquid different from the first chemical liquid, and a rinse liquid; treating the substrate with the first chemical solution at the first treatment position; treating the substrate with the second chemical solution at the second treatment position; 4. The substrate processing apparatus according to claim 1, wherein the substrate is processed with the rinse liquid at the third processing position.

12. At one of the third processing positions, rinsing the substrate processed at the first processing position; The substrate processing apparatus of claim 11 , further comprising: a rinsing process for the substrate processed at the second processing position.

13. a plurality of the third processing positions are provided, The plurality of third processing locations include: a third processing position for rinsing the substrate processed at the first processing position; the third processing position for rinsing the substrate processed at the second processing position; The substrate processing apparatus of claim 11 , comprising:

14. The substrate holder includes: Holding the substrate horizontally; 4. The substrate processing apparatus according to claim 1, further comprising: a base disposed above the substrate; and a plurality of chuck pins protruding downward from the base to hold the periphery of the substrate.

15. an immersion tank disposed at the processing position, storing the processing liquid, and accommodating the substrate so as to immerse the substrate in the processing liquid; a processing liquid supply unit that supplies the processing liquid to the immersion tank; a lifting mechanism that moves the substrate holder and the immersion tank relative to each other in the up and down direction; Equipped with 4. The substrate processing apparatus according to claim 1, wherein the lifting mechanism immerses the substrate in the processing liquid by moving the substrate holder or the immersion tank while the processing liquid is stored in the immersion tank.

16. the substrate holder rotatably holds the substrate; The substrate processing apparatus according to claim 15 , wherein the lifting mechanism immerses the substrate in the processing liquid stored in the immersion tank while the substrate holder rotates the substrate.

17. The substrate processing apparatus according to claim 15 , wherein the lifting mechanism immerses the substrate in the processing liquid stored in the immersion tank while the processing liquid supply unit supplies the processing liquid toward the substrate.

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