Gas distribution assembly and substrate processing apparatus

Abstract

To provide a gas distribution assembly and a substrate processing apparatus.SOLUTION: The gas distribution assembly is used in a substrate processing apparatus, the substrate processing apparatus comprises a base and a reaction chamber, the reaction chamber is configured to accommodate a substrate, the base is configured to place the substrate, and the gas distribution assembly is configured to distribute gas to a surface of the substrate; The gas distribution assembly includes at least one output module, the output module includes a gas chamber, at least one gas inlet, and a pulse valve located between the gas chamber and the gas inlet, the gas chamber is connected to the at least one gas inlet, and the pulse valve is in one to-one correspondence with the gas inlet and is located at an end of the gas inlet connected to the gas chamber.SELECTED DRAWING: Figure 5

Description

[Technical Field]

[0001] TECHNICAL FIELD This application is in the field of semiconductor manufacturing equipment, and more particularly, relates to gas distribution assemblies and substrate processing equipment. [Background technology]

[0002] The substrate processing apparatus includes a gas distribution assembly, a reaction chamber, and a base. The base includes wafers for manufacturing chips and base substrates for manufacturing display panels, and the substrate processing includes dry etching, thin film deposition, dry cleaning, etc. Thin film deposition includes chemical vapor deposition (CVD), physical vapor deposition (PVD), and atomic layer deposition (ALD).

[0003] When a substrate processing apparatus is in operation, a substrate is placed on the base 10, the reaction chamber 20 accommodates the substrate, and the gas distribution assembly 30 is connected to the gas source 40 to introduce gas into the reaction chamber 20 to perform the substrate processing described above. As shown in FIG. 1 , the substrate processing apparatus is used to fabricate a film layer by ALD, where the gas distribution assembly 30 includes a nozzle 31, which is connected to the gas source 40 via a conduit, and a control valve 32 is installed in the conduit to control communication between the gas source 40 and the nozzle 31. When a conventional substrate processing apparatus is in operation, different types of gases, e.g., a first gas and a second gas, must be introduced alternately into the reaction chamber 20. Because the control valve 32 is installed in the conduit, gas remaining in the conduit and nozzle 31 behind the control valve 32 must be evacuated before the gas is replaced. Because a large amount of gas needs to be evacuated, it is easy for the gases to remain, resulting in mixing of the gases introduced before and after within one cycle T, as shown in FIG. 2 . After the mixed first gas and second gas undergo a chemical reaction in a gaseous state, the product is deposited on the surface of the substrate, which reduces the uniformity of the film layer formed by atomic layer deposition. Summary of the Invention

[0004] It is an object of the present application to provide a gas distribution assembly and substrate processing apparatus that improves deposition quality and product yield.

[0005] In order to achieve the above object, the present application provides a gas distribution assembly for use in a substrate processing apparatus, the substrate processing apparatus including a base and a reaction chamber, the reaction chamber configured to accommodate a substrate, the base configured to place the substrate, the gas distribution assembly configured to distribute a gas to a surface of the substrate, the gas distribution assembly comprising: The gas distribution assembly includes at least one output module, the output module including a gas chamber, at least one intake port, and a pulse valve located between the gas chamber and the intake port, the gas chamber being connected to at least one of the intake ports, the pulse valve being in one-to-one correspondence with the intake port and located at one end of the intake port connected to the gas chamber, and when the gas distribution assembly includes multiple intake ports, the multiple intake ports are distributed on a plane or a curved surface; Distributing gas to the surface of the substrate includes transporting gas in the gas chamber to the reaction chamber through the inlet when the pulse valve is opened.

[0006] Optionally, the switching frequency of the pulse valve is 100 Hz or higher.

[0007] Optionally, the switching frequency of the pulse valve is adjustable.

[0008] Optionally, the pulse valve includes a separator layer and an actuator, and the separator layer can be deformed or displaced under the action of the actuator to open or close the pulse valve; Opening the pulse valve includes moving the separator layer away from the one end of the intake port that is connected to the gas chamber, thereby connecting the gas chamber to the intake port, and closing the pulse valve includes closing the one end of the intake port that is connected to the gas chamber, by the separator layer.

[0009] Optionally, the depth of the air inlet is less than 5mm.

[0010] Optionally, the output module further includes an air pressure control unit for controlling the air pressure in the gas chamber.

[0011] Optionally, the gas distribution assembly further includes an input module for connecting to a gas source device; the air pressure control unit includes an air pressure sensor and a flow rate controller, the flow rate controller is installed between the input module and the gas chamber, and the air pressure sensor is configured to detect the air pressure in the gas chamber and output a pressure signal; The flow controller is configured to adjust the flow rate of gas delivered from the input module to the gas chamber in response to the pressure signal, including increasing the inhalation flow rate when the air pressure value corresponding to the pressure signal is lower than a predetermined value, and decreasing the inhalation flow rate when the air pressure value corresponding to the pressure signal is higher than a predetermined value.

[0012] Optionally, at least a portion of the output module further includes a plasma generator disposed within the gas chamber.

[0013] Optionally, the plasma generator includes two working electrodes that are opposed to and spaced apart from each other, each of the two working electrodes including a discharge electrode, and at least one of the working electrodes further includes a dielectric film, the dielectric film being disposed on the opposite side of the discharge electrode; The two working electrodes are configured to allow at least some of the gas in the gas chamber to pass between the two working electrodes.

[0014] Optionally, at least a portion of the gas chamber includes an evaporation chamber for containing a solid or liquid evaporation source, the evaporation chamber having an opening facing the pulse valve.

[0015] Optionally, a plurality of the output modules include the evaporation chambers, and the pulse valves can be independently switched between at least two of the output modules having the evaporation chambers.

[0016] Optionally, the gas distribution assembly includes a plurality of input modules for connecting to a gas source device; each said input module is connected to at least one said output module, and each said output module is connected to one said input module; Between at least two of the plurality of input modules, the pulse valves of the output modules connected to each of the at least two input modules can be switched independently.

[0017] Optionally, the gas distribution assembly includes a showerhead, and the inlet terminates at a terminal surface of the showerhead.

[0018] Optionally, the end surface is a flat, convex or concave surface, and distributing the plurality of air inlets on a flat or curved surface includes distributing the ends of the air inlets on the end surface.

[0019] Optionally, for each of the input modules, the ends of the inlets of the output modules connected to each of the input modules are uniformly distributed on the termination face of the showerhead.

[0020] Optionally, the plurality of input modules include a first input module and a second input module, and between the first input module and the second input module, the pulse valves of the output modules connected to the first input module and the second input module can be independently switched; In the output module connected to the first input module, the air intakes are distributed in a first strip-shaped region, and in the output module connected to the second input module, the air intakes are distributed in a second strip-shaped region; The first strip-shaped regions and the second strip-shaped regions are alternately arranged on a plane along the annular line, and the first strip-shaped regions and the second strip-shaped regions extend along the radial direction of the annular line.

[0021] Optionally, the gas distribution assembly further includes an exhaust port provided between the first strip-shaped region and the second strip-shaped region, the exhaust port being configured to be connected to an exhaust device to discharge gas from the reaction chamber, and the exhaust port being in the form of a strip extending radially along the annular line.

[0022] Optionally, the inlet and outlet are radial.

[0023] The present application further provides a substrate processing apparatus, a reaction chamber for accommodating a substrate; a base for placing the substrate; and a gas distribution assembly as described above for distributing gas to the surface of the substrate.

[0024] The gas distribution assembly and substrate processing apparatus disclosed herein have the following beneficial effects:

[0025] In the present application, a gas distribution assembly is used in a substrate processing apparatus, the substrate processing apparatus including a base and a reaction chamber, the reaction chamber configured to accommodate a substrate, the base configured to support the substrate, the gas distribution assembly configured to distribute gas to a surface of the substrate, and at least one output module, the output module including a gas chamber, at least one inlet, and a pulse valve located between the gas chamber and the inlet, the gas chamber connected to the at least one inlet, the pulse valve corresponding to the inlet one-to-one and located at one end of the inlet connected to the gas chamber. The volume of the inlet is significantly reduced relative to the interior and ducts of the entire gas distribution assembly, reducing the exhaust volume and ease of exhaust difficulty, thereby reducing residual gas in the reaction chamber and reducing mixing of gases introduced into the reaction chamber when the pulse valve is opened twice, thereby improving film formation quality and product yield.

[0026] Other features and advantages of the present application will be apparent from the following detailed description, or may be learned in part by the practice of the present application.

[0027] It is to be understood that the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the present disclosure. [Brief explanation of the drawings]

[0028] The drawings herein are incorporated into the specification and constitute a part of this specification, illustrate embodiments consistent with the present application, and are used together with the specification to interpret the principles of the present application. Obviously, the drawings in the following description are merely some embodiments of the present application, and those skilled in the art can obtain other drawings based on these drawings without creative efforts. [Figure 1] FIG. 1 is a schematic structural view of a conventional substrate processing apparatus. [Figure 2] 1 is a schematic diagram of the state of a first gas and a second gas in a conventional reaction chamber. [Figure 3] 1 is a structural schematic diagram of a gas distribution assembly according to an embodiment of the present application; [Figure 4] FIG. 2 is a schematic diagram showing connections between a plurality of intake ports and a gas chamber in an embodiment of the present application. [Figure 5] 1 is a structural schematic diagram of a substrate processing apparatus according to an embodiment of the present invention; [Figure 6] 2 is a schematic diagram of the state of a first gas and a second gas in a reaction chamber in an embodiment of the present application. [Figure 7A] 1 is a schematic diagram of a pulsed valve being closed in an embodiment of the present application; [Figure 7B] 1 is a schematic diagram of a pulsed valve being opened in an embodiment of the present application; [Figure 8A] FIG. 1 is a schematic diagram of a horizontally placed plasma generator according to an embodiment of the present application. [Figure 8B] FIG. 1 is a schematic diagram of a vertically placed plasma generator according to an embodiment of the present application. [Figure 9] 1 is a schematic diagram of a gas chamber having an evaporation chamber according to an embodiment of the present application. [Figure 10A] 1 is a schematic diagram of a substrate processing apparatus having a planar showerhead according to an embodiment of the present application. [Figure 10B] 1 is a schematic diagram of a substrate processing apparatus having a convex showerhead according to an embodiment of the present application. [Figure 10C] 1 is a schematic diagram of a substrate processing apparatus having a concave showerhead according to an embodiment of the present application. [Figure 11] 1 is a schematic diagram of a batch-type substrate processing apparatus according to an embodiment of the present invention; [Figure 12] FIG. 12 is a schematic development view of the AA cross section in FIG. DETAILED DESCRIPTION OF THE INVENTION

[0029]

[0013] Exemplary embodiments will now be described more fully with reference to the accompanying drawings. Exemplary embodiments may, however, be embodied in many forms and should not be construed as limited to the examples set forth herein; rather, these embodiments are provided so that this application will be thorough and complete, and will fully convey the concept of exemplary embodiments to those skilled in the art.

[0030] Furthermore, the described features, structures, or characteristics may be combined in any suitable manner in one or more embodiments. In the following description, numerous specific details are provided to provide a thorough understanding of the embodiments of the present application. However, those skilled in the art will understand that the technical solutions of the present application may be implemented without one or more of the specific details, or other methods, components, devices, steps, etc. may be used. In other instances, well-known methods, devices, implementations, or operations are not shown or described in detail to avoid obscuring aspects of the present application.

[0031] The present application will be described in more detail below with reference to the drawings and specific examples. The technical features of each embodiment of the present application described below can be combined with each other as long as they are not inconsistent. The embodiments described below with reference to the drawings are illustrative and are intended to help interpret the present application, but should not be construed as limiting the present application.

[0032] 3 and 4, an embodiment of the present application provides a gas distribution assembly 100. Referring to FIG. 5, the gas distribution assembly 100 is used in a substrate processing apparatus, the substrate processing apparatus including a base 200 and a reaction chamber 301, the reaction chamber 301 configured to accommodate a substrate 900, the base 200 being at least partially located within the reaction chamber 301, the base 200 being configured to support the substrate 900, and the gas distribution assembly 100 being configured to distribute gas to a surface of the substrate 900. The gas distribution assembly 100 is connected to a gas source device 400, and a gas source in the gas source device 400 is transported to the exposed surface of the substrate 900 in the reaction chamber 301 via the gas distribution assembly 100. The substrate processing apparatus further includes an exhaust device 500, the exhaust device 500 being connected to the reaction chamber 301 and configured to exhaust gas from the reaction chamber 301.

[0033] For example, the substrate processing apparatus may be used for processes such as ALD, deposition, etc., but is not limited thereto, and may be determined according to specific circumstances.

[0034] Illustratively, the substrate 900 is a single crystal silicon wafer, but is not limited thereto. The substrate 900 may be any substrate for mounting a semiconductor integrated circuit known to those skilled in the art, and the present application is not limited thereto. Illustratively, the substrate 900 may include at least one of semiconductor materials, such as silicon (e.g., single crystal silicon Si), silicon germanium (SiGe), germanium (Ge), gallium arsenide (GaAs), indium phosphide (InP), and silicon carbide (SiC). In some embodiments, the substrate 900 may be a single-layer structure, such as, but not limited to, a single-layer structure made of at least one of materials including silicon, germanium, and gallium arsenide. Alternatively, the substrate 900 may be a multi-layer structure, such as, for example, a stack of silicon and silicon germanium, a stack of silicon and silicon carbide, a composite substrate including a silicon-on-insulator (SOI), a germanium-on-insulator (GeOI), or a silicon germanium-on-insulator (SGOI). In other embodiments, the substrate 900 may be an insulating substrate. The insulating substrate may be made of a non-conductive material such as glass, plastic, or a sapphire wafer, or the substrate 900 may be an insulating dielectric material such as silicon dioxide (SiO), silicon nitride (SiN), or the like.

[0035] In the present application, the type of gas distributed to the surface of the substrate 900 by the gas distribution assembly 100 is not particularly limited. Exemplarily, the gas distribution assembly 100 may be connected to a gas source apparatus 400 for providing a gas source, which may be a process gas or a purge gas, and the gas source apparatus 400 may include, for example, a gas storage apparatus or a gas production apparatus, and the gas source may be an at least partially ionized gas, i.e., the gas source apparatus 400 may be a remote plasma source (RMS), and the gas source may include, but is not limited to, plasma, and is determined according to specific circumstances.

[0036] Furthermore, the gas raw material may be directly distributed by the gas distribution assembly 100, but is not limited to this. The gas raw material may be distributed after being subjected to processing such as heating, cooling, or mixing in the gas distribution assembly 100, or may be distributed after being (again) ionized into plasma in the gas distribution assembly 100 (as will be described in the examples below), and this is determined according to the specific circumstances.

[0037] 3 to 5, the gas distribution assembly 100 includes at least one output module 120, which includes a gas chamber 121, at least one inlet 122, and a pulse valve 123 located between the gas chamber 121 and the inlet 122. The gas chamber 121 is connected to the at least one inlet 122, and the pulse valve 123 corresponds to the inlet 122 one-to-one and is located at one end of the inlet 122 connected to the gas chamber 121. The inlet 122 is distributed on a flat or curved surface. Distributing the process gas to the surface of the substrate 900 includes transporting the process gas in the gas chamber 121 from the inlet 122 to the reaction chamber 301 when the pulse valve 123 is opened.

[0038] Generally, the gas distribution assembly 100 further includes an input module 110 configured to connect to the gas source apparatus 400, an output module 120 correspondingly communicating with the connected input module 110, and the connection between the input module 110 and the output module 120 includes the input module 110 being connected to a gas chamber 121. As shown in FIG. 3 , one input module 110 may be connected to at least one output module 120. As can be appreciated, one output module 120 is connected to one input module 110. This allows the gas source in the gas source apparatus 400 to be transported from the input module 110 to the correspondingly communicating output module 120 and then to the exposed surface of the substrate 900 in the reaction chamber 301.

[0039] In the embodiment shown in FIG. 3, the gas distribution assembly 100 includes multiple input modules 110, and one input module 110 is connected to multiple output modules 120, but is not limited to this. In some embodiments, the gas distribution assembly 100 includes one input module 110, and one or more output modules 120 are connected to the same input module 110. In some embodiments, the input modules 110 and the output modules 120 are connected in a one-to-one correspondence. In some embodiments, the number of output modules 120 connected to each input module 110 may be the same or different, and is determined according to the specific situation.

[0040] The output module 120 includes a gas chamber 121, at least one inlet 122, and a pulse valve 123 located between the gas chamber 121 and the inlet 122. The gas chamber 121 is connected to the at least one inlet 122, and the pulse valve 123 corresponds to the inlet 122 one-to-one and is located at one end of the inlet 122 connected to the gas chamber 121. That is, the front end of the pulse valve 123 is connected to the gas chamber 121, and the rear end of the pulse valve 123 is directly connected to the inlet 122. Preferably, the gas chamber 121 may be directly connected to the tip of the pulse valve 123, but is not limited thereto. Other components may also be provided between the gas chamber 121 and the tip of the pulse valve 123.

[0041] In some embodiments, as shown in FIG. 3, one gas chamber 121 is connected to one inlet 122. However, this is not limiting. As shown in FIG. 4, one gas chamber 121 may be connected to multiple inlets 122, and the number of inlets 122 connected to each gas chamber 121 may be the same or different, and can be determined according to specific circumstances. In the gas distribution assembly 100, the multiple inlets 122 are distributed in a planar manner, for example, in a plane. Distributing the process gas to the surface of the substrate 900 includes transporting the process gas in the gas chamber 121 from the inlet 122 to the reaction chamber 301 when the pulse valve 123 is opened. That is, the gas distribution assembly 100 introduces the gas into the reaction chamber 301 in a planar manner through the multiple inlets 122, thereby distributing the gas to the substrate 900 in a planar manner.

[0042] The gas inlets 122 in the gas distribution assembly 100 may be distributed in a plane to distribute gas to the substrate 900 in a planar manner, but are not limited to this. The gas inlets 122 may also be distributed in a curved manner, and specific curved distribution methods will be described in subsequent examples.

[0043] In conventional substrate processing apparatuses, because the control valve 32 is installed in the pipeline, it is necessary to discharge gas remaining in a portion of the pipeline and the nozzle 31 at the rear end of the control valve 32 before replacing the gas. However, since a large amount of gas needs to be discharged and tends to remain, the gases introduced before and after within one cycle T end up mixing with each other. After the mixed first gas and second gas undergo a chemical reaction in gaseous form, the product is deposited on the surface of the substrate, reducing the uniformity of the atomic layer deposition film layer.

[0044] In this embodiment, when the pulse valve 123 is opened, the gas in the gas chamber 121 is transported to the reaction chamber 301 through the inlet 122, allowing the gas distribution assembly 100 to distribute the gas to the surface of the substrate 900; when the pulse valve 123 is closed, the gas at the front end of the pulse valve 123, including but not limited to the gas in the gas chamber 121, cannot enter the reaction chamber 301, and the rear end of the pulse valve 123 is directly connected to the inlet 122, so there is only the inlet 122 at the rear end of the pulse valve 123. As shown in Figures 1 to 5, the volume of the intake port 122 is very small compared to the interior and ducts of the entire gas distribution assembly 100, and when the substrate processing apparatus is in operation, the reaction chamber 301 is always exhausted at negative pressure. By reducing the volume other than the reaction chamber 301, the exhaust volume is reduced and the exhaust difficulty is eased, thereby reducing the residual gas in the reaction chamber 301 and reducing the mixing of gases introduced into the reaction chamber 301 when the pulse valve 123 is opened twice, thereby improving the film formation quality and product yield.

[0045] In some embodiments, the switching frequency of the pulse valve 123 is 100 Hz or more, i.e., the switching period is 10 milliseconds or less. Optionally, the switching frequency is 10 kHz or less. For example, the switching period of the pulse valve 123 is 10 milliseconds, 1 millisecond, 10 microseconds, etc. The switching period of the pulse valve 123 is 10 milliseconds or less, i.e., the pulse valve 123 can achieve high-frequency switching.

[0046] Although the gas distribution assembly 100 may be configured to uniformly distribute gas onto the surface of the substrate 900 through the multiple inlets 122 each time the pulse valve 123 opens, due to factors such as the constant opening of the exhaust device 500 connected to the reaction chamber 301, temperature distribution variations in the substrate 900, and reaction consumption, the uniformity of the gas concentration distribution within the reaction chamber 301 decreases with the extension of the switching period. Therefore, the pulse valve 123 can achieve high-frequency switching, allowing the gas within the reaction chamber 301 to be exhausted and refreshed within a very short time, avoiding the deterioration of the uniformity of the gas concentration distribution within the reaction chamber 301 due to the extension of the switching period. This improves the overall uniformity of the process gas distribution within the reaction chamber 301 and further enhances the uniformity of the processing of the substrate 900.

[0047] Additionally, when the gas distribution assembly 100 alternately introduces two or more gases, the pulse valve 123 can achieve high frequency switching, which can improve the processing efficiency of the substrate 900. Illustratively, the process implemented by the substrate processing apparatus is ALD, and the pulse valve 123 of the gas distribution assembly 100 can be switched at high frequency to alternately provide two different process gases to the substrate 900, which can improve the deposition efficiency of the ALD.

[0048] Optionally, the switching frequency of the pulse valve 123 can be adjusted, so that the switching frequency of the pulse valve 123 can be specifically set according to the process conditions of the specific substrate 900 processing.

[0049] In some embodiments, the pulse valve 123 includes a separator layer 1231 and an actuator 1232, and the separator layer 1231 can be deformed or displaced under the action of the actuator 1232 to open or close the pulse valve 123. That is, the pulse valve 123 includes a separator valve, and the separator valve can achieve millisecond or microsecond level switching (e.g., a switching period of 10 microseconds to 10 milliseconds), thereby improving the processing uniformity of the substrate 900 and increasing the deposition efficiency.

[0050] The separator layer 1231 can be deformed or displaced under the action of the actuator 1232. For example, the actuator 1232 and the separator layer 1231 may be formed integrally, and the actuator 1232 may vibrate to drive the deformation or displacement of the separator layer 1231; alternatively, the actuator 1232 and the separator layer 1231 may be formed separately, and the actuator 1232 may vibrate to collide with or press against the separator layer 1231, thereby deforming the separator layer 1231. However, this is not limited to this, and it is sufficient that the actuator 1232 can alternately open and close one end of the separator layer 1231 that is connected to the gas chamber 121 of the intake port 122. Alternatively, the separator layer 1231 may be a thin metal film such as stainless steel, and the actuator 1232 may be, for example, a piezoelectric actuator or an electromagnetic actuator, but is not limited thereto, as long as the separator layer 1231 is deformable and the actuator 1232 can be controlled to drive the separator layer 1231 at high frequency to operate it.

[0051] The pulse valves 123 correspond one-to-one to the intake ports 122 and are located at one end of the intake port 122 connected to the gas chamber 121. Opening the pulse valve 123 involves moving the separator layer 1231 away from the end connected to the gas chamber 121 of the intake port 122 to connect the gas chamber 121 to the intake port 122, and closing the pulse valve 123 involves closing the end connected to the gas chamber 121 of the intake port 122 by the separator layer 1231. Illustratively, referring to FIG. 7A, when the pulse valve 123 is closed, the separator layer 1231 seals and covers one end of the inlet 122 connected to the gas chamber 121, preventing gas in the gas chamber 121 from entering the reaction chamber 301 through the inlet 122; and referring to FIG. 7B, when the pulse valve 123 is opened, the separator layer 1231 connects the gas chamber 121 to the inlet 122, at least away from the one end of the inlet 122 connected to the gas chamber 121, allowing gas in the gas chamber 121 to enter the reaction chamber 301 through the inlet 122; the gas flow path is indicated by the arrow in the figure.

[0052] The pulse valve 123 may include a separator valve, but is not limited to this. The pulse valve 123 may include other electrically controlled valves as long as they can achieve high-speed switching on the order of milliseconds or microseconds.

[0053] In some embodiments, the depth of the inlet 122 is less than 5 mm. Preferably, the depth of the inlet 122 is less than 3 mm, and preferably, the depth of the inlet 122 is less than 1 mm. As can be seen, the smaller the volume of the inlet 122, the smaller the volume outside the reaction chamber 301, the smaller the amount of gas that needs to be evacuated between the two intakes in the reaction chamber 301, the lower the difficulty of evacuation, the shorter the evacuation time, the less residual gas in the reaction chamber 301, and the less mixing of gases introduced into the reaction chamber 301 when the pulse valve 123 is opened twice. Therefore, by making the depth of the inlet 122 less than 5 mm, for example, 1 to 5 mm, or 1 to 3 mm, the quality of the film deposition can be improved.

[0054] In some embodiments, the output module 120 further includes an air pressure control unit 124, which is configured to control the air pressure in the gas chamber 121. As can be understood, before the pulse valve 123 is opened, the reaction chamber 301 is in a stable negative pressure state. After the pulse valve 123 is opened, the amount of gas introduced into the reaction chamber 301 through the inlet 122 is related to the air pressure difference between the gas chamber 121 and the reaction chamber 301. The pulse valve 123 opens and closes intermittently, and the gas in the gas chamber 121 is introduced into the reaction chamber 301 through the inlet 122. The air pressure control unit 124 can adjust the air pressure in the gas chamber 121 to reduce the fluctuation of the air pressure in the gas chamber 121, thereby stabilizing the amount of air intake at each intake of the inlet 122. Therefore, by controlling the air pressure in the gas chamber 121, the multiple inlets 122 in the gas distribution assembly 100 can be uniformly suctioned, which is advantageous for achieving uniform and stable distribution of gas onto the surface of the substrate 900.

[0055] As shown in FIG. 3, the gas distribution assembly 100 further includes an input module 110 for connecting to the gas source device 400, and the air pressure control unit 124 includes an air pressure sensor 1241 and a flow controller 1242, the flow controller 1242 is installed between the input module 110 and the gas chamber 121, the air pressure sensor 1241 is configured to detect the air pressure in the gas chamber 121 and output a pressure signal, and the flow controller 1242 is configured to adjust the flow rate of gas delivered from the input module 110 to the gas chamber 121 in response to the pressure signal.

[0056] The air pressure sensor 1241 may be provided in the gas chamber 121, but is not limited to this, as long as it can detect the air pressure in the gas chamber 121 and output a pressure signal. In the embodiment shown in FIG. 3, the air pressure control unit 124 further includes a feedback circuit for transmitting the pressure signal to the flow controller 1242, but is not limited to this, and as long as it can transmit the pressure signal to the flow controller 1242, the pressure signal may be transmitted by a method such as wireless communication. The flow controller 1242 may include, for example, an adjustable valve provided in a pipe connecting the gas chamber 121 and the input module 110, but is not limited to this, as long as it can adjust the flow rate of gas transported from the input module 110 to the gas chamber 121 in response to the pressure signal.

[0057] The flow controller 1242 controls the flow rate between the input module 110 and the gas chamber 121 in real time based on the air pressure in the gas chamber 121, i.e., increases the intake flow rate when the air pressure value corresponding to the pressure signal is lower than a predetermined value, and decreases the intake flow rate when the air pressure value corresponding to the pressure signal is higher than a predetermined value, thereby controlling and stabilizing the air pressure in the gas chamber 121 and further improving the reaction uniformity in the reaction chamber 301.

[0058] 3, 8A, and 8B, at least a portion of the output module 120 further includes a plasma generator 125, which is installed in the gas chamber 121. By installing the plasma generator 125 in the gas chamber 121, the plasma generator 125 can ionize the gas raw material, and the input module 110 does not need to be connected to a plasma source, and the output module 120 can provide plasma, thereby reducing the cost and volume of the substrate processing apparatus. Alternatively, the input module 110 can be connected to the plasma source, i.e., the gas source device 400 is the plasma source, and the gas raw material can be re-ionized in the gas chamber 121 and then input into the reaction chamber 301 through the inlet 122 and distributed to the surface of the substrate 900.

[0059] 8A and 8B, the plasma generator 125 includes two working electrodes that are opposed to and spaced apart, each of which includes a discharge electrode 1251, and at least one of the working electrodes further includes a dielectric film 1252 that is disposed on the opposite side of the discharge electrode 1251. In other words, the plasma generator 125 is a dielectric barrier discharge (DBD) plasma generator 125.

[0060] Optionally, the dielectric film 1252 is formed on the entire outer surface of the discharge electrode 1251 .

[0061] The two discharge electrodes 1251 may be connected to a high-frequency voltage source. The two working electrodes are arranged so that at least a portion of the gas in the gas chamber 121 can pass between them. For example, as shown in FIG. 8A , the two working electrodes are both installed on the side walls of the gas chamber 121. The gas passes through the space between the two working electrodes, is ionized, and then enters the reaction chamber 301 through the inlet 122 when the pulse valve 123 is opened. Alternatively, as shown in FIG. 8B , the two working electrodes are installed one behind the other in the gas flow path in the gas chamber 121. Both working electrodes include a hollow portion. For example, the two working electrodes are formed in a ring or mesh shape. The gas passes through the hollow portion of one working electrode, enters the space between the two working electrodes, is ionized, passes through the hollow portion of the other working electrode, and then enters the reaction chamber 301 through the inlet 122 when the pulse valve 123 is opened. However, the present invention is not limited to this, and any other arrangement is possible as long as the gas can pass between the two electrodes.

[0062] The plasma generator 125 may be a dielectric barrier discharge plasma generator 125, with two working electrodes connected to a high-frequency power supply, but is not limited to this. Other types of plasma generators 125 may be provided in the output module 120 as long as they can ionize gas and generate plasma.

[0063] Furthermore, it should be noted that the plasma generator 125 is installed within the gas chamber 121 of the gas distribution assembly 100, and whether or not the substrate processing apparatus including the gas distribution assembly 100 further includes another plasma generator 125 is not specifically limited in the present application.

[0064] 9, at least a portion of the gas chamber 121 includes an evaporation chamber 1211 configured to accommodate a solid or liquid evaporation source, the evaporation chamber 1211 having an opening facing the pulse valve 123. This allows the gas distribution assembly 100 to be configured to deposit a thin film on the substrate 900.

[0065] In some embodiments, the gas chambers 121 of the multiple output modules 120 include evaporation chambers 1211, and the pulse valves 123 can be independently switched between at least two output modules 110 having evaporation chambers 1211. For example, the multiple output modules 120 include a first output module 120a and a second output module 120b, and the pulse valves 123 can be independently switched between the first output module 120a and the second output module 120b. This allows the evaporation chambers 1211 of the first output module 120a and the second output module 120b to accommodate different evaporation sources, thereby enabling the deposition of a composite thin film on the substrate 900. As can be understood, the composite thin film may be a thin film formed by alternating layers of two types of materials, but is not limited to this. The multiple output modules 120 may include first to Nth output modules, and the pulse valves 123 therebetween may be independently switched. The gas distribution assembly 100 may be used to deposit a composite thin film on the substrate 900 in which N types of materials are alternately layered, where N≧3.

[0066] Optionally, the gas distribution assembly 100 further includes a temperature controller 126 configured to control the temperature of the evaporation source contained within the evaporation chamber 1211, thereby causing a physical and / or chemical reaction in the evaporation source to generate gas, which is introduced into the reaction chamber 301 via the intake port 122 when the pulse valve 123 is opened.

[0067] Preparing gases in the gas chamber 121 simplifies the construction of the gas distribution assembly 100 compared to solutions in which gases are directly introduced via the input module 110. Also, producing gases directly in the gas chamber 121 is suitable for providing chemically unstable gases and gases that are difficult to store. In some embodiments, the gas chamber 121 includes an evaporation chamber 1211, and a plasma generator 125 is disposed within the gas chamber 121, thereby enabling the gas distribution assembly 100 to be used for plasma-assisted deposition processes.

[0068] In one embodiment of the present application, the gas distribution assembly 100 includes a plurality of input modules 110, each of which is configured to connect to a gas source device 400, and each of which is connected to at least one output module 120, and each of which is connected to one input module 110, and among at least two of the plurality of input modules 110, the pulse valves 123 of the output modules 120 connected to each of the at least two input modules 110 can be independently switched. Thus, by controlling the pulse valves 123 of the output modules 120 connected to the at least two input modules 110 to be alternately switched, the gas distribution assembly 100 can alternately introduce different gases into the reaction chamber 301.

[0069] In one embodiment, the gas distribution assembly 100 includes a plurality of input modules 110, and among each input module 110, the pulse valves 123 of the output modules 120 connected to each of the input modules 110 can be switched independently; alternatively, the plurality of input modules 110 may be divided into a plurality of groups, each group including one or more input modules 110, and among the input modules 110 of each group, the pulse valves 123 of the output modules 120 connected to each of the input modules 110 of each group can be switched independently, but this is not limited to this; it is sufficient that among at least two input modules 110, the pulse valves 123 of the output modules 120 connected to each of the at least two input modules 110 can be switched independently.

[0070] For example, as shown in Figures 3 and 5, the gas distribution assembly 100 includes two input modules 110, a first input module 110a and a second input module 110b, respectively. The gas source device 400 connected to the first input module 110a provides a first gas, and the gas source device 400 connected to the second input module 110b provides a second gas. Within one cycle period T, the pulse valve 123 of the output module 120 connected to the first input module 110a is controlled to open at time t1 and close at time t2, and the pulse valve 123 of the output module 120 connected to the second input module 110b is controlled to open at time t3 and close at time t4, thereby enabling the gas distribution assembly 100 to alternately introduce the first gas and the second gas into the reaction chamber 301.

[0071] By adopting the gas distribution assembly 100 according to the embodiment of the present application, the volume of the rear end of the pulse valve 123 is significantly reduced, which reduces the exhaust volume and eases the exhaust difficulty. As a result, the residual gas in the reaction chamber 301 is reduced, and the mixing of the gases introduced into the reaction chamber 301 when the pulse valve 123 is opened twice, i.e., before and after the opening, reduces, and the mixing rate of the first gas and the second gas is reduced. As shown in FIG. 6, the pulse valve 123 can realize high-frequency switching, which avoids the deterioration of the uniformity of the gas concentration distribution in the reaction chamber 301 due to the extended switching period, and improves the overall uniformity of the process gas distribution in the reaction chamber 301, thereby further improving the film formation quality and product yield.

[0072] Illustratively, the substrate processing apparatus includes a gas distribution assembly 100, and the substrate processing apparatus is configured to perform atomic layer deposition on a substrate 900. For example, when performing atomic layer deposition of a titanium nitride (TiN) film layer, the first gas is titanium chloride (TiCl4) and the second gas is ammonia (NH3), where the output module 120 connected to the first input module 110a and the output module 120 connected to the second input module 110b alternately introduce TiCl4 and NH3 into the reaction chamber 301, thereby achieving atomic layer deposition of a TiN film layer on the surface of the substrate 900, thereby improving the thickness uniformity of the film layer and the deposition efficiency.

[0073] Illustratively, a plasma generator 125 is installed in the gas chamber 121 of the output module 120 for introducing the second gas, and the plasma generator 125 ionizes at least a portion of the second gas to generate plasma, thereby realizing plasma-assisted atomic layer deposition and further improving the efficiency of atomic layer deposition.

[0074] The substrate processing apparatus includes a gas distribution assembly 100 and is configured to perform atomic layer deposition on a substrate 900. The film layer of the atomic layer deposition is not limited to TiN, and the specific film layer may vary depending on the circumstances. A plasma generator 125 may be installed in any one of the gas chambers 121 connected to any one of the multiple input modules 110 to achieve plasma-assisted atomic layer deposition and further improve the efficiency of the atomic layer deposition. For example, a plasma generator 125 may be installed in each gas chamber 121, or in all gas chambers 121 connected to some of the multiple input modules 110, or in some of the multiple gas chambers 121 connected to one input module 110, depending on the circumstances. It should be understood that the above embodiments are merely illustrative and that other installation methods for the plasma generator 125 may be used, and the specific embodiments are not exhaustive.

[0075] 10A-10C , the gas distribution assembly 100 includes a showerhead 127, and the inlet 122 is located within the showerhead 127. As can be appreciated, the end surface 1271 of the showerhead 127 can be a flat surface, and the inlet 122 is located within the showerhead 127, e.g., the inlet 122 is a through-hole within the showerhead 127, and the separator layer 1231 covers one end of the through-hole where it connects to the gas chamber 121, with the end of the through-hole located on the end surface 1271 of the showerhead 127.

[0076] In one embodiment, the ends of all the inlets 122 are uniformly distributed on the end surface 1271 of the showerhead 127, for example, in an array distribution or a ring arrangement. In one embodiment, all the inlets 122 have the same size, but this is not limiting, and the sizes of the inlets 122 may be partially the same or all different, and the distribution of the inlets 122 may not be uniform and may be set based on the process performed by the substrate processing apparatus.

[0077] In some embodiments, the plurality of input modules 110 includes a first input module 110a and a second input module 110b, both of which are connected to the gas source device 400, and each of the first input module 110a and the second input module 110b is connected to at least one output module 120, and each output module 120 is connected to one of the first input module 110a and the second input module 110b, and Between the first input module 110a and the second input module 110b, the pulse valves 123 of the output modules 120 connected to the first input module 110a and the second input module 110b can be independently switched, where the ends of the inlets 122 of the output modules 120 connected to the first input module 110a are uniformly distributed on the end face 1271 of the showerhead 127, and the ends of the inlets 122 of the output modules 120 connected to the second input module 110b are uniformly distributed on the end face 1271 of the showerhead 127. This allows the gas distribution assembly 100 to alternately and uniformly introduce two types of gases into the reaction chamber 301, but is not limited thereto. The number of input modules 110 may be more than two, and for each input module 110, the ends of the inlets 122 of the output modules 120 connected to each input module 110 are uniformly distributed on the end face 1271 of the showerhead 127, as determined according to specific circumstances.

[0078] 10A to 10C, the gas distribution assembly 100 is applied to a substrate processing apparatus, which includes the gas distribution assembly 100 and a base 200 for supporting a substrate 900. Optionally, the base 200 can move toward or away from the gas distribution assembly 100. The reaction chamber 301 includes a space located between the base 200 and the end surface 1271. The reaction chamber 301 typically communicates with an exhaust device 500 (shown in FIG. 5 ). The exhaust device 500 provides negative pressure to exhaust gas from the reaction chamber 301. The arrows in the figures indicate the direction of gas flow when the exhaust device 500 exhausts gas from the reaction chamber 301. The gas exhausted by the exhaust device 500 includes gas from the reaction chamber 301 and the gas in the inlet 122.

[0079] Illustratively, the end surface 1271 is flat, convex, or concave, and the ends of the intake ports 122 are located on the end surface 1271, as shown in Figures 10A, 10B, and 10C, respectively, so that the ends of the intake ports 122 are distributed in a flat or curved surface.

[0080] As can be understood, when the ends of the inlets 122 are distributed in a convex or concave shape, the extension directions of the plurality of inlets 122 are parallel to each other, and optionally, as shown in Figures 10A and 10C, when the gas distribution assembly 100 is applied to a substrate processing apparatus, the extension direction of the plurality of parallel inlets 122 is perpendicular to the surface of the substrate 900 placed on the base 200. In some examples, the extension direction of the plurality of inlets 122 is perpendicular to the tangent plane of the end face 1271 at the intersection with the end face 1271 as shown in Figure 10B, but is not limited thereto, and in some embodiments, the extension direction of the inlets 122 may be specifically set according to the process performed by the substrate processing apparatus.

[0081] Exemplarily, the reaction chamber 301 communicating with the exhaust device 500 includes the showerhead 127 and the outer edge of the base 200 forming a circumferential slit 103, the exhaust device 500 communicating with the reaction chamber 301 through the slit 103, and the exhaust device 500 being able to discharge gas from the reaction chamber 301 through the slit 103. In some embodiments, the substrate processing apparatus further includes a chamber body that houses the reaction chamber 301, and the exhaust device 500 is connected to the chamber body and communicates with the reaction chamber 301 through the slit 103.

[0082] 10A, the end surface 1271 of the showerhead 127 is flat, resulting in a simple structure. In the embodiment shown in FIG. 10B, the end surface 1271 of the showerhead 127 is convex, thereby increasing the width of the slit 103 without increasing the volume of the reaction chamber 301. This reduces the exhaust volume and improves exhaust efficiency, further reducing the degree of mixing between the gases introduced into the reaction chamber 301 twice. In the embodiment shown in FIG. 10C, the end surface 1271 of the showerhead 127 is concave, thereby improving the residence time of the gas in the reaction chamber 301 and the gas utilization rate. Furthermore, it can be seen that the narrower the slit 103, the lower the exhaust efficiency of the exhaust device 500 when exhausting gas from the reaction chamber 301.

[0083] When the end surface 1271 of the shower head 127 is a convex or concave surface, there are no particular limitations on whether the convex or concave surface is regular, as long as it is a convex or concave surface overall.

[0084] Referring to the embodiments shown in Figures 3, 11 and 12, the gas distribution assembly 100 includes a plurality of input modules 110, including a first input module 110a and a second input module 110b, and between the first input module 110a and the second input module 110b, the pulse valves 123 of the output modules 120 connected to each of the first input module 110a and the second input module 110b can be independently switched. In the output module 120 connected to the first input module 110a, the air intakes 122 are distributed in a first strip-shaped region 101, and in the output module 120 connected to the second input module 110b, the air intakes 122 are distributed in a second strip-shaped region 102, the first strip-shaped region 101 and the second strip-shaped region 102 being alternately arranged on a plane along a circular line, the first strip-shaped region 101 and the second strip-shaped region 102 extending in a radial direction of the circular line, which can pass through the cross section AA in Figure 11. Note that the first strip-shaped region 101 and the second strip-shaped region 102 extend in a radial direction of the circular line, which includes extending substantially in a radial direction of the circular line.

[0085] 11, the first strip-shaped region 101 and the second strip-shaped region 102 are rectangular, but are not limited thereto. In some embodiments, the first strip-shaped region 101 and the second strip-shaped region 102 may be fan-shaped, or the sides extending along the radial direction of the annular line of the first strip-shaped region 101 and the second strip-shaped region 102 may be curved. The shapes and sizes of the first strip-shaped region 101 and the second strip-shaped region 102 may be the same or different and are determined according to specific circumstances. The extension direction between the first strip-shaped region 101 and the second strip-shaped region 102 does not have to be along the radial direction of the annular line, and the extension directions of the two may be the same or different.

[0086] Optionally, the width of the annular line of the first strip-shaped region 101 and the second strip-shaped region 102 is smaller than that of the substrate 900. Optionally, the distribution range of the air intake ports 122 in the first strip-shaped region 101 and the second strip-shaped region 102 has a length along the radial direction of the annular line that is larger than that of the substrate 900.

[0087] Optionally, in the output module 120 connected to the first input module 110a, the air intakes 122 are arranged in the first strip-shaped region 101, for example, in a single row equidistantly along a circular line or in a matrix, in the radial direction along the circular line. Alternatively, in the output module 120 connected to the second input module 110b, the air intakes 122 are arranged in the second strip-shaped region 102, for example, in a single row equidistantly along a circular line or in a matrix, in the radial direction along the circular line. Optionally, the arrangement of the air intakes 122 in the first strip-shaped region 101 may be the same as or different from the arrangement of the air intakes 122 in the second strip-shaped region 102. Optionally, the arrangement of the air intakes 122 in the first strip-shaped region 101 and the arrangement of the air intakes 122 in the second strip-shaped region 102 may be uniform or non-uniform. This is not specifically limited in the present application.

[0088] In the gas distribution assembly 100, the plurality of input modules 110 may further include a third input module to an Nth input module and an output module 120 connected to each of them, where N>3, and the present application is not specifically limited thereto.

[0089] 11 and 12 , in one embodiment, the gas distribution assembly 100 further includes an exhaust port 128 provided between the first strip-shaped region 101 and the second strip-shaped region 102, and the exhaust port 128 is configured to be connected to an exhaust device 500 to exhaust gas from the reaction chamber 301. Optionally, an exhaust port 128 is provided between each pair of adjacent first strip-shaped regions 101 and second strip-shaped regions 102. Optionally, the exhaust port 128 is also strip-shaped or fan-shaped extending along the radial direction of the annular line. Optionally, the strip-shaped exhaust port 128 has a width along the annular line that is smaller than the substrate 900. Optionally, the strip-shaped exhaust port 128 has a length along the radial direction of the annular line that is greater than the substrate 900.

[0090] The gas distribution assembly 100 of the embodiment shown in Figure 11 can be applied to a substrate processing apparatus, which is a batch processing apparatus, and which includes a base 200, which can mount multiple substrates 900 along a circular line, and in the substrate processing apparatus, the base 200 and the gas distribution assembly 100 can rotate relatively, for example, the base 200 is arranged to be rotatable, or the gas distribution assembly 100 can rotate, or both can rotate relatively, or can rotate in the same direction but at different speeds.

[0091] For example, when the substrate processing apparatus is operating, the gas distribution assembly 100 and the base 200 rotate relative to each other, the first input module 110a introduces a first gas, the second input module 110b introduces a second gas, and the first strip-shaped region 101, the exhaust port 128, the second strip-shaped region 102, and the exhaust port 128 periodically face one area on the substrate 900 placed on the base 200, thereby periodically distributing the first gas to the area, removing the first gas, distributing the second gas, and removing the first gas. This allows batch processing of substrate 900, such as ALD, ALE, and deposition, on the surface of substrate 900, and also significantly reduces the volume at the rear end of pulse valve 123, reducing the amount of exhaust and making exhaust easier. This reduces the amount of residual gas in reaction chamber 301, reduces the mixing of gases introduced into reaction chamber 301 when pulse valve 123 is opened twice, and reduces the mixing rate of the first gas and the second gas, improving processing uniformity.

[0092] Furthermore, both the exhaust port 128 and the inlet port 122 are radial, and when the gas distribution assembly is applied to a substrate processing apparatus, the dimensions of the exhaust port 128 and the inlet port 122 at their ends close to the base 200 are larger than the dimensions of their ends away from the base 200. This allows for gas guidance, reduces the difficulty of the gas being discharged from the reaction chamber 301, and further reduces the degree of mixing between the first gas and the second gas. Exemplarily, the exhaust port 128 and the inlet port 122 being radial includes having the entire inner walls of the exhaust port 128 and the inlet port 122 being radial, or having the tips of the exhaust port 128 and the inlet port 122 being columnar, with only the inner walls at the ends being radial. Optionally, the exhaust port 128 is connected to the end of at least a portion of the radial inner wall of the inlet port 122.

[0093] The present application further provides a substrate processing apparatus including a reaction chamber 301 for accommodating a substrate 900, a base 200 for placing the substrate 900, and the above-disclosed gas distribution assembly 100 for distributing gas to the surface of the substrate 900.

[0094] The substrate processing apparatus may be used for, but is not limited to, vapor deposition, atomic layer deposition thin film, or atomic layer etching, and the present application does not specifically limit the processes performed by the substrate processing apparatus.

[0095] The substrate processing apparatus of the present application may be arranged horizontally, i.e., the base 200 and the gas distribution assembly 100 are each arranged horizontally, and the space between the base 200 and the gas distribution assembly 100 is arranged vertically. The base 200 is arranged horizontally, i.e., the base 200 can horizontally place the substrate 900 thereon.

[0096] Alternatively, the substrate processing apparatus of the present application may be arranged inclined or vertical, i.e., the base 200 and the gas distribution assembly 100 are arranged inclined or vertical, respectively, and the intake surface of the gas distribution assembly 100 is installed facing the surface of the base 200 on which the substrate 900 is placed. The base 200 is arranged inclined or vertical, i.e., the base 200 can hold the substrate 900 inclined or vertical position. This can reduce the footprint of the substrate processing apparatus and reduce costs.

[0097] Terms such as "first," "second," etc. are used for descriptive purposes only and should not be understood as indicating or implying relative importance or the number of technical features shown. Therefore, a feature qualified with "first," "second," etc. may explicitly or implicitly include one or more of that feature. In this description, "plurality" means two or more unless expressly and specifically qualified otherwise.

[0098] In this application, unless otherwise clearly specified or limited, the terms "assembled," "connected," and the like should be understood in a broad sense, and may refer to, for example, a fixed connection, a detachable connection, or integration, a mechanical connection, an electrical connection, a direct connection, an indirect connection via an intermediate medium, an internal communication between two elements, or an interactive relationship between two elements. Those skilled in the art can understand the specific meanings of the above terms in this application according to specific circumstances.

[0099] In the description herein, references to terms such as "some embodiments," "exemplary," and the like mean that the specific features, structures, materials, or characteristics described with reference to the embodiments or examples are included in at least one embodiment or example of the present application. In the present specification, the illustrative descriptions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, unless mutually inconsistent, those skilled in the art may combine and combine different embodiments or examples described herein and features of different embodiments or examples.

[0100] Although the embodiments of the present application have been shown and described above, the above embodiments are illustrative and should not be understood as limiting the present application. Those skilled in the art can make changes, modifications, substitutions and variations to the above embodiments within the scope of the present application. Therefore, any changes or modifications made in accordance with the claims and specifications of the present application should be included within the scope of the patent of the present application. [Explanation of symbols]

[0101] 100, gas distribution assembly; 110, input module; 110a, first input module; 110b, second input module; 120, output module; 120a, first output module; 120b, second output module; 121, gas chamber; 1211, evaporation chamber; 122, intake port; 123, pulse valve; 1231, separator layer; 1232, actuator; 124, air pressure control unit; 12 41, air pressure sensor; 1242, flow rate controller; 125, plasma generator; 1251, discharge electrode; 1252, dielectric film; 126, temperature controller; 127, shower head; 1271, termination surface; 128, exhaust port; 101, first strip-shaped region; 102, second strip-shaped region; 103, slit; 200, base; 301, reaction chamber; 400, gas source device; 500, exhaust device; 900, substrate

Claims

1. 1. A gas distribution assembly for use in a substrate processing apparatus, comprising: the substrate processing apparatus includes a base and a reaction chamber, the reaction chamber configured to receive a substrate, the base configured to mount the substrate, and the gas distribution assembly configured to distribute gas to a surface of the substrate; the gas distribution assembly includes at least one output module, the output module including a gas chamber, at least one intake port, and a pulse valve located between the gas chamber and the intake port, the gas chamber being connected to at least one of the intake ports, the pulse valve being in one-to-one correspondence with the intake port and located at one end of the intake port connected to the gas chamber, when the gas distribution assembly includes multiple intake ports, the multiple intake ports are distributed on a plane or a curved surface; distributing gas to the surface of the substrate includes transporting gas in the gas chamber to the reaction chamber through the inlet when the pulse valve is opened; 10. A gas distribution assembly comprising:

2. The switching frequency of the pulse valve is 100 Hz or more. The gas distribution assembly of claim 1 .

3. The switching frequency of the pulse valve is adjustable. The gas distribution assembly of claim 2 .

4. The pulse valve includes a separator layer and an actuator, and the separator layer can be deformed or displaced under the action of the actuator to open or close the pulse valve; Opening the pulse valve includes moving the separator layer away from one end of the intake port connected to the gas chamber to communicate with the intake port, and closing the pulse valve includes closing the one end of the intake port connected to the gas chamber by the separator layer. The gas distribution assembly of claim 2 .

5. The depth of the air inlet is less than 5 mm. The gas distribution assembly of claim 1 .

6. the output module further includes an air pressure control unit for controlling the air pressure in the gas chamber; The gas distribution assembly of claim 1 .

7. the gas distribution assembly further includes an input module for connecting to a gas source device; the air pressure control unit includes an air pressure sensor and a flow rate controller, the flow rate controller is installed between the input module and the gas chamber, and the air pressure sensor is configured to detect the air pressure in the gas chamber and output a pressure signal; The flow controller is configured to adjust the flow rate of gas delivered from the input module to the gas chamber in response to the pressure signal, including increasing the inspiratory flow rate when the air pressure value corresponding to the pressure signal is lower than a predetermined value, and decreasing the inspiratory flow rate when the air pressure value corresponding to the pressure signal is higher than a predetermined value. The gas distribution assembly of claim 6 .

8. At least some of the output modules further include a plasma generator disposed within the gas chamber. The gas distribution assembly of claim 1 .

9. the plasma generator includes two working electrodes facing each other and spaced apart, each of the two working electrodes including a discharge electrode, and at least one of the working electrodes further includes a dielectric film, the dielectric film being disposed on an opposite side of the discharge electrode; The two working electrodes are configured to allow at least a portion of the gas in the gas chamber to pass between the two working electrodes. The gas distribution assembly of claim 8 .

10. At least a portion of the gas chamber includes an evaporation chamber for accommodating a solid or liquid evaporation source, the evaporation chamber having an opening facing the pulse valve. A gas distribution assembly according to any one of claims 1 to 6, 8 and 9.

11. The plurality of output modules include the evaporation chambers, and the pulse valves can be independently switched between at least two of the output modules having the evaporation chambers. The gas distribution assembly of claim 10 .

12. the gas distribution assembly including a plurality of input modules for connecting to a gas source device; each said input module is connected to at least one said output module, and each said output module is connected to one said input module; Between at least two of the plurality of input modules, the pulse valves of the output modules connected to each of the at least two input modules can be switched independently. A gas distribution assembly according to any one of the preceding claims.

13. the gas distribution assembly includes a showerhead, and the inlet terminates on a terminal surface of the showerhead. The gas distribution assembly of claim 12 .

14. The end surface is a flat, convex or concave surface, and distributing the plurality of air intakes on a flat or curved surface includes distributing the ends of the air intakes on the end surface. The gas distribution assembly of claim 13 .

15. For each of the input modules, the ends of the inlets of the output modules connected to each of the input modules are uniformly distributed on the termination surface of the showerhead. The gas distribution assembly of claim 13 .

16. the plurality of input modules include a first input module and a second input module, and between the first input module and the second input module, the pulse valves of the output modules connected to the first input module and the second input module can be independently switched; In the output module connected to the first input module, the air intakes are distributed in a first strip-shaped region, and in the output module connected to the second input module, the air intakes are distributed in a second strip-shaped region; the first strip-shaped regions and the second strip-shaped regions are alternately arranged on a plane along the annular line, and the first strip-shaped regions and the second strip-shaped regions extend along a radial direction of the annular line; The gas distribution assembly of claim 12 .

17. the gas distribution assembly further includes an exhaust port provided between the first strip-shaped region and the second strip-shaped region, the exhaust port being configured to be connected to an exhaust device to exhaust gas from the reaction chamber, and the exhaust port being in the form of a strip extending along a radial direction of the annular line; The gas distribution assembly of claim 16 .

18. The intake port and the exhaust port are radially arranged.

20. The gas distribution assembly of claim 17.

19. A substrate processing apparatus, a reaction chamber for accommodating a substrate; a base for placing the substrate; a gas distribution assembly according to any one of claims 1 to 9 for distributing gas to the surface of the substrate; A substrate processing apparatus comprising:

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