Substrate processing method and substrate processing apparatus

Abstract

To provide a substrate processing method and a substrate processing apparatus capable of suppressing consumption of a chemical liquid.SOLUTION: The substrate treatment device 1 includes a step S2 (immersing step) for immersing a substrate row constituted by horizontally arranging substrates W in a vertical posture in sulphuric acid, a step S3 (pulling-up step) for pulling up the whole substrate row from sulphuric acid, and a step S5 (mist supplying step) for supplying oxygenated water mist to the pulled-up substrate row. Thus, only the sulfuric acid liquid film adhering to the surface of the substrate is converted into the SPM. As a result, the consumption amount of the hydrogen peroxide solution is significantly suppressed as compared with the conventional case.SELECTED DRAWING: Figure 5

Description

[Technical Field]

[0001] The present invention relates to a substrate processing method and a substrate processing apparatus for simultaneously performing SPM (Sulfuric Acid and Hydrogen Peroxide Mixture) processing on a plurality of substrates. [Background technology]

[0002] Patent Document 1 describes a substrate processing apparatus for processing substrates using a first processing liquid containing sulfuric acid and a second processing liquid containing hydrogen peroxide, the substrate processing apparatus including a sulfuric acid tank for storing the first processing liquid at a high temperature, a substrate lifting mechanism for raising and lowering the substrate relative to the sulfuric acid tank, and a mist supplying means for supplying a mist of the second processing liquid near the liquid surface of the first processing liquid when the substrate lifting mechanism lifts the substrate from the sulfuric acid tank or when the substrate is immersed in the sulfuric acid tank. With this substrate processing apparatus, hydrogen peroxide can be supplied to substrates having sulfuric acid attached thereto. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Laid-Open No. 2010-103190 Summary of the Invention [Problem to be solved by the invention]

[0004] However, the above configuration does not sufficiently reduce the amount of hydrogen peroxide consumed during SPM treatment. Conventional SPM treatment involves immersing a substrate in an SPM tank containing a mixture of sulfuric acid and hydrogen peroxide. To perform the desired chemical treatment on a substrate using this method, hydrogen peroxide and sulfuric acid must be continuously supplied to the SPM tank. In this regard, the method of Patent Document 1 can reduce the amount of hydrogen peroxide consumed to some extent. This is because SPM is generated at the surface of the sulfuric acid by supplying a mist of hydrogen peroxide from above the sulfuric acid tank. In other words, the method of Patent Document 1 can reduce the amount of hydrogen peroxide consumed compared to a configuration in which the entire sulfuric acid tank is converted into SPM.

[0005] However, the method of Patent Document 1 is still insufficient in terms of reducing the amount of hydrogen peroxide and sulfuric acid consumed.

[0006] The present invention has been made in view of the above circumstances, and an object of the present invention is to provide a substrate processing method and a substrate processing apparatus that can reduce the amount of chemical solution consumed. [Means for solving the problem]

[0007] The present invention has the following configuration in order to solve the above-mentioned problems. That is, the substrate processing method of the present invention includes an immersion step of immersing a row of substrates, which are vertically oriented substrates arranged horizontally, in sulfuric acid; a step of lifting the entire array of substrates out of sulfuric acid; a mist supplying step of supplying a hydrogen peroxide mist to the pulled-up substrate row. It is characterized by the following.

[0008] [Actions and Effects] The substrate processing method of the present invention comprises an immersion process in which a row of vertically oriented substrates arranged horizontally is immersed in sulfuric acid, a lifting process in which the entire row of substrates is lifted out of the sulfuric acid, and a mist supply process in which a hydrogen peroxide mist is supplied to the lifted row of substrates. In this way, only the sulfuric acid liquid film adhering to the substrate surfaces is converted into SPM. As a result, the amount of hydrogen peroxide consumed in the chemical processing of the present invention is significantly reduced compared to conventional methods.

[0009] In addition, in the above-mentioned substrate processing method, It is more preferable to provide a re-immersion step of immersing the substrate array in sulfuric acid again after the mist supply step.

[0010] [Operation and Effect] According to the above-mentioned configuration, after the mist supplying process, a re-immersion process is provided in which the row of substrates is immersed again in sulfuric acid, thereby ensuring more reliable substrate processing.

[0011] In addition, in the above-mentioned substrate processing method, It is more preferable that the substrate row moves up and down in a space above the liquid surface of the sulfuric acid during the mist supplying process.

[0012] [Operation and Effect] With the above-mentioned configuration, the row of substrates moves back and forth up and down in the space above the liquid surface of the sulfuric acid during the mist supply process. This configuration allows the hydrogen peroxide solution to be distributed over the entire area of ​​the substrates.

[0013] In addition, in the above-mentioned substrate processing method, the array of substrates has a resist layer; It is more preferable that the sulfuric acid in the immersion process is heated to a temperature higher than a target temperature suitable for stripping the resist layer.

[0014] [Actions and Effects] According to the above-described configuration, the sulfuric acid temperature during the immersion process is higher than the target temperature suitable for stripping the resist layer. This configuration allows substrate processing to be performed at an appropriate temperature during the mist supply process. The substrate is cooled by the hydrogen peroxide mist during the mist supply process. However, in this configuration, since the substrate is heated to a higher temperature during the immersion process, the substrate is cooled by the hydrogen peroxide mist, resulting in a temperature appropriate for stripping the resist layer.

[0015] This specification also discloses the following substrate processing apparatus. That is, the substrate processing apparatus of the present invention comprises: a sulfuric acid tank capable of holding sulfuric acid; a lifter that holds a substrate array formed by arranging vertically oriented substrates in a horizontal direction and is capable of switching between a standby state in which the substrate array is above the liquid surface in the sulfuric acid bath and an immersed state in which the substrate array is below the liquid surface; a mist supply unit that supplies a hydrogen peroxide water mist to the substrate row; A control unit is provided to control the lifter and the mist supply unit, The control unit Controlling the lifter to immerse the waiting substrate row; controlling the lifter to place the immersed substrate row in a standby state, thereby lifting the entire substrate row out of the sulfuric acid; The mist supply unit is controlled to supply a hydrogen peroxide mist to the substrate row that has been lifted out of the sulfuric acid. It is characterized by the following.

[0016] [Operations and Effects] The substrate processing apparatus of the present invention includes a control unit that controls the lifter and mist supply unit, and the control unit controls the lifter to put a row of substrates in a standby state into an immersed state, controls the lifter to put the immersed row of substrates in a standby state, thereby lifting the entire row of substrates out of the sulfuric acid, and controls the mist supply unit to supply a hydrogen peroxide mist to the row of substrates lifted out of the sulfuric acid. With this configuration, it is possible to provide a substrate processing apparatus that exhibits the effects of the present invention described above.

[0017] In the above-mentioned substrate processing apparatus, The control unit It is more preferable to control the lifter to immerse the waiting substrate row in the sulfuric acid, so that the substrates to which the hydrogen peroxide mist has been supplied are immersed in the sulfuric acid.

[0018] [Operation and Effect] The above-mentioned configuration controls the lifter to immerse the waiting substrates in the sulfuric acid solution, so that the substrates to which the hydrogen peroxide mist has been applied are immersed. This configuration ensures that the above-mentioned re-immersion process can be carried out reliably.

[0019] In the above-mentioned substrate processing apparatus, the mist supply unit has a nozzle head provided at the tip of a nozzle that supplies hydrogen peroxide solution, a first nozzle head array in which the nozzle heads are arranged at predetermined intervals in the arrangement direction of the substrates; the nozzle heads are arranged at predetermined intervals in the substrate arrangement direction, and a second nozzle head array is provided which, together with the first nozzle head array, sandwiches the substrate row in a direction perpendicular to the substrate arrangement direction; It is preferable that the nozzle heads constituting the second nozzle head array are provided at positions shifted in the arrangement direction of the substrate by half a predetermined distance from the nozzle heads constituting the first nozzle head array.

[0020] [Operations and Effects] The above-mentioned configuration includes a first nozzle head array in which the nozzle heads are arranged at a predetermined distance in the direction of the substrate arrangement, and a second nozzle head array in which the nozzle heads are arranged at a predetermined distance in the direction of the substrate arrangement and which, together with the first nozzle head array, sandwich the row of substrates in a direction perpendicular to the direction of the substrate arrangement, and the nozzle heads that make up the second nozzle head array are shifted in the direction of the substrate arrangement by half the predetermined distance from the nozzle heads that make up the first nozzle head array. With this configuration, it is possible to supply hydrogen peroxide water mist evenly to the row of substrates.

[0021] In the above-mentioned substrate processing apparatus, a cover that is displaceable between a closed state that covers the upper part of the sulfuric acid tank and an open state that moves to a position away from the upper part of the sulfuric acid tank; a cover drive mechanism for operating the cover, The control unit It is more preferable to control the cover drive mechanism to close the cover from the open state after the row of substrates has been lifted out of the sulfuric acid tank and before the hydrogen peroxide mist is supplied.

[0022] [Operations and Effects] The above-described configuration includes a cover that can be moved between a closed state covering the top of the sulfuric acid tank and an open state in which the cover is moved away from the top of the sulfuric acid tank, and a cover drive mechanism that operates the cover. After the substrate row is lifted from the sulfuric acid tank and before the hydrogen peroxide mist is supplied, the control unit controls the cover drive mechanism to close the open cover. This configuration allows the cover to insulate the space where substrates are processed with sulfuric acid from the space where substrates are processed with hydrogen peroxide. This reliably prevents hydrogen peroxide mist from mixing with the sulfuric acid.

[0023] In the above-mentioned substrate processing apparatus, It is preferable to provide an outlet for discharging hydrogen peroxide solution adhering to the cover.

[0024] [Operation and Effect] The above-mentioned configuration is equipped with an outlet for discharging hydrogen peroxide adhering to the cover. With this configuration, even when the cover is open, hydrogen peroxide adhering to the cover does not reach the sulfuric acid tank. Furthermore, with this configuration, hydrogen peroxide is recovered, making it easy to reuse it for spraying mist. [Effects of the Invention]

[0025] According to the present invention, it is possible to provide a substrate processing method and a substrate processing apparatus that can reduce the amount of chemical solution consumed. [Brief explanation of the drawings]

[0026] [Figure 1] 1 is a plan view illustrating an overall configuration of a substrate processing apparatus according to an embodiment. [Figure 2] FIG. 2 is a side view illustrating the configuration of a carrier according to the embodiment. [Figure 3] FIG. 2 is a perspective view illustrating a transfer block according to the embodiment. [Figure 4] FIG. 2 is a cross-sectional view illustrating a batch processing unit according to an embodiment. [Figure 5] 10 is a flowchart illustrating an operation of a batch processing unit according to an embodiment. [Figure 6] 10A to 10C are cross-sectional views illustrating the operation of the batch processing unit according to the embodiment. [Figure 7] 10A to 10C are cross-sectional views illustrating the operation of the batch processing unit according to the embodiment. [Figure 8] 10A to 10C are cross-sectional views illustrating the operation of the batch processing unit according to the embodiment. [Figure 9] FIG. 1 is a plan view illustrating a chemical solution treatment according to an embodiment. [Figure 10] 10A to 10C are cross-sectional views illustrating the operation of the batch processing unit according to the embodiment. [Figure 11] FIG. 1 is a plan view illustrating a chemical solution treatment according to an embodiment. [Figure 12] 10A to 10C are cross-sectional views illustrating the operation of the batch processing unit according to the embodiment. [Figure 13] 10A to 10C are cross-sectional views illustrating the operation of the batch processing unit according to the embodiment. [Figure 14] 10A to 10C are cross-sectional views illustrating the operation of the batch processing unit according to the embodiment. [Figure 15] 10A to 10C are cross-sectional views illustrating the operation of the batch processing unit according to the embodiment. [Figure 16] 10A to 10C are cross-sectional views illustrating the operation of the batch processing unit according to the embodiment. [Figure 17] 10A to 10C are cross-sectional views illustrating the operation of the batch processing unit according to the embodiment. [Figure 18]1 is a flowchart illustrating a flow of substrate processing according to an embodiment. [Figure 19] FIG. 10 is a cross-sectional view illustrating a modified example of the present invention. [Figure 20] FIG. 10 is a plan view illustrating a modified example of the present invention. [Figure 21] 10 is a flowchart illustrating a modified example of the present invention. DETAILED DESCRIPTION OF THE INVENTION

[0027] Hereinafter, an embodiment of the present invention will be described with reference to the drawings. The substrate processing apparatus of the present invention is configured to perform SPM (Sulfuric Acid and Hydrogen Peroxide Mixture) processing on multiple substrates in a vertical position at the same time. The SPM processing of the present invention can remove photoresist residue remaining on the substrates. The photoresist residue is an example of the resist layer of the present invention. Specifically, the SPM processing of the present invention is a chemical processing using a mixture of sulfuric acid and hydrogen peroxide solution. [Example]

[0028] <1. Overall structure> The substrate processing apparatus 1 according to the present invention is configured to perform batch processing and has a housing 1A that houses each block that constitutes the substrate processing apparatus 1. The housing 1A has a load port 9 that protrudes from a first wall surface that is perpendicular to the Y direction from the processing block 6 toward the transfer block 5. A carrier C that houses a substrate array in which horizontally oriented substrates W are arranged vertically at a specific pitch can be placed on the load port 9.

[0029] For convenience, in this specification, the direction in which the stocker block 3, transfer block 5, and processing block 6 in the substrate processing apparatus 1 are arranged is referred to as the "front-rear direction X." The front-rear direction X extends horizontally. Within the front-rear direction X, the direction from the transfer block 5 toward the stocker block 3 in the substrate processing apparatus 1 is referred to as the "front." The direction opposite the front is referred to as the "rear." The horizontal direction perpendicular to the front-rear direction X is referred to as the "width direction Y." One direction of the "width direction Y" is referred to as the "right" for convenience, and the other direction is referred to as the "left" for convenience. The direction perpendicular to the front-rear direction X and the width direction Y (height direction) is referred to as the "vertical direction Z" for convenience. In each figure, the terms "front," "back," "right," "left," "top," and "bottom" are indicated as appropriate for reference.

[0030] <2. Stocker block> 1, the stocker block 3 is provided with a load port 9, which is an entrance through which a carrier C, which stores multiple substrates W in a horizontal position and at predetermined intervals in the vertical direction, is introduced into the block. The load port 9 protrudes from the outer wall of the stocker block 3, which extends in the width direction (Y direction).

[0031] A plurality of substrates W (for example, 25 substrates) are stacked and stored horizontally at regular intervals in one carrier C. The carrier C storing unprocessed substrates W to be carried into the substrate processing apparatus 1 is first placed on the load port 9.

[0032] FIG. 2 illustrates the configuration of a carrier C of the present invention. The carrier C has a plurality of horizontally extending slots S formed therein, which hold substrates W with their surfaces spaced apart. The slots S are arranged vertically at a specific pitch (e.g., 10 mm), and each slot S accommodates a substrate W. Twenty-five slots S are provided in one carrier C. Therefore, 25 substrates W are arranged vertically at the specific pitch in the carrier C. A mounting plate 7 is located at a position that separates each slot S, and supports both ends of the substrate W together with its paired mounting plate 7. Therefore, one mounting plate 7 is provided on each side of the carrier C and on a surface parallel to that side. An example of a carrier C is a sealed FOUP (Front Opening Unify Pod). In the present invention, an open container may be used as the carrier C.

[0033] The internal structure of the stocker block 3 will now be described. The stocker block 3 is equipped with a transport storage unit ACB that stocks and manages carriers C. The transport storage unit ACB is equipped with a carrier transport mechanism 11 that transports the carriers C and shelves 13 on which the carriers C are placed. The stocker block 3 can stock one or more carriers C.

[0034] The stocker block 3 has a plurality of shelves 13 on which carriers C are placed. The shelves 13 are provided on a partition wall separating the stocker block 3 and the transfer block 5. The shelves 13 include a stock shelf 13b on which carriers C are simply placed temporarily, and a carrier placement shelf 13a which is accessed by the first handling robot HTR of the transfer block 5 and is used to remove substrates.

[0035] The carrier mounting shelf 13a is configured to be able to mount a carrier C. The carrier mounting shelf 13a is configured to mount a carrier C from which a substrate W is to be removed. In this embodiment, one carrier mounting shelf 13a is provided, but multiple carrier mounting shelves 13a may be provided. The carrier transport mechanism 11 takes in a carrier C storing an unprocessed substrate W from the load port 9 and places it on the carrier mounting shelf 13a for substrate removal. At this time, the carrier transport mechanism 11 can also temporarily place the carrier C on a stock shelf 13b before placing it on the carrier mounting shelf 13a. The stocker block 3 has one or more carrier mounting shelves 13a.

[0036] The carrier mounting shelf 13a is also configured to mount empty carriers C for storing processed substrates W. The processed substrates W are stored in carriers C waiting on the carrier mounting shelf 13a. The carrier transport mechanism 11 retrieves the carriers C storing the processed substrates W from the carrier mounting shelf 13a and transports them to the load port 9. When transporting the carriers C to the load port 9, the carrier transport mechanism 11 may temporarily store the carriers C on the stock shelf 13b.

[0037] <3. Transfer block> The transfer block 5 is adjacent to the carrier mounting shelf 13a. The transfer block 5 is disposed adjacent to and rear of the stocker block 3. The transfer block 5 is equipped with a handling robot HTR that can access carriers C placed on the carrier mounting shelf 13a for removing substrates, an HVC position conversion unit 23 that converts the position of multiple substrates W collectively from a horizontal position to a vertical position, and a pusher mechanism 25. The HVC position conversion unit 23 converts multiple substrates W collectively from a horizontal position to a vertical position. Furthermore, a substrate transfer position PP is set in the transfer block 5 for transferring multiple substrates W to the substrate transport mechanism WTR provided in the batch transport region R2.

[0038] As shown in FIG. 3, the handling robot HTR, HVC posture conversion unit 23, and pusher mechanism 25 are arranged in this order in the Y direction. The handling robot HTR has a plurality of hands 211 that can hold substrates W in a horizontal posture. One hand 211 can hold one substrate W. The handling robot HTR has a plurality of hands 211 arranged in the vertical direction. The handling robot HTR can transport a plurality of substrates W at once by holding a substrate with each of the plurality of hands 211. The movement support mechanism 213 is a mechanism that constitutes the handling robot HTR, and is configured to rotate the hand 211 around a vertical axis, raise and lower the hand 211, move the hand 211 forward and backward in the forward and backward direction X, and move the hand 211 laterally in the left and right direction Y.

[0039] The handling robot HTR has 25 hands 211. The handling robot HTR uses these hands to transport 25 substrates stored in the carrier C all at once.

[0040] The HVC attitude conversion unit 23 is configured to convert the substrate W taken out of the carrier C by the handling robot HTR from a horizontal attitude to a vertical attitude. The HVC attitude conversion unit 23 includes a pair of mounting rods 231 and a pair of clamping rods 232 extending in the vertical direction (Z direction). The support base 237 has a support surface extending in the XY plane that supports the mounting rods 231 and clamping rods 232. The rotation drive mechanism 238 is configured to rotate the mounting rods 231 and clamping rods 232 together with the support base 237 by 90°. This rotation causes the mounting rods 231 and clamping rods 232 to extend in the left-right direction (Y direction).

[0041] The pusher mechanism 25 includes a pusher 251 that can arrange the substrate W in a vertical position in the horizontal direction. The pusher 251 is a half-pipe type that follows the curve of the bottom of the substrate W. In the initial state, the pusher 251 has a U-shaped groove 251a that forms the half-pipe extending in the left-right direction Y. In this state, the pusher 251 can receive the substrate W from the HVC position conversion unit 23.

[0042] The pusher shift mechanism 254 can reciprocate the pusher 251 in the initial state in the left-right direction Y. The pusher shift mechanism 254 can move the pusher 251 closer to the HVC attitude conversion unit 23, and can also move the pusher 251 closer to the substrate transport mechanism WTR.

[0043] The pusher lifting mechanism 255 can lift the pusher 251 from the initial position to the sky position. The pusher lifting mechanism 255 can also return the pusher 251 from the sky position to the initial position.

[0044] The following describes how the handling robot HTR retrieves horizontally oriented substrates W from the carrier C and transports them to the pusher 251. First, the handling robot HTR orients its hand 211 forward to retrieve the row of horizontally oriented substrates from the carrier C all at once. Then, the handling robot HTR rotates the hand 211 around a rotation axis extending vertically, and directs the hand 211 toward the HVC attitude conversion unit 23, as shown in Fig. 3. Note that the substrates W held by the hand 211 are omitted from Fig. 3.

[0045] Thereafter, the hand 211 delivers the row of substrates to the HVC attitude conversion unit 23. At this time, the substrates W are held by a pair of placement rods 231.

[0046] Having acquired the substrate row, the HVC attitude conversion unit 23 operates the rotation drive mechanism 238 as shown by the arrow in Figure 3 to convert the attitude of the substrates W constituting the substrate row from a horizontal attitude to a vertical attitude. As a result, the substrates W that were aligned vertically and in a horizontal attitude are now aligned in the left-right direction Y (horizontal direction). At this time, the substrates W are separated from the pair of placement rods 231 and supported by the pair of clamping rods 232.

[0047] 3, before the HVC attitude conversion unit 23 rotates, the pusher mechanism 25 moves the pusher 251 downward and waits until the train of substrates arrives. The pusher mechanism 25 then raises the pusher 251, as shown by the arrow in FIG. 3, toward the substrate W supported by the clamping rod 232. The substrate W is then pushed up by the pusher 251 and separated from the clamping rod 232, and is eventually held only by the pusher 251. In this way, the pusher mechanism 25 obtains the substrate W from the HVC attitude conversion unit 23.

[0048] The pusher mechanism 25 repeats this process of acquiring a substrate row twice, thereby forming a lot of 50 substrates arranged horizontally. The lot is made up of substrates W for two carriers C as described in FIG. 2, and the arrangement pitch of the substrates W in the lot is half (5 mm) of the arrangement pitch of the substrates W in the carrier C. Furthermore, in the substrate processing apparatus of the present invention, an operation of rotating the pusher 251 180° around the vertical axis can be added between the operation of acquiring the first substrate row and the operation of acquiring the second substrate row. Such a lot is a type of substrate row in the present invention.

[0049] The transfer block 5 has a substrate row support section 27 as a section capable of holding a substrate row separate from the pusher 251. This substrate row support section 27 serves as a lot holder for temporarily evacuating the substrate row when congestion of the substrate row occurs between the transfer block 5 and the processing block 6.

[0050] <4. Processing Block> The following describes the configuration of the processing block 6 described in Figure 1. Processing block 6 is adjacent to transfer block 5. Processing block 6 performs batch processing on the above-mentioned array of substrates. Processing block 6 is divided into a batch processing region R1, which is arranged in the width direction (Y direction), and a batch transfer region R2. Each region extends in the front-to-rear direction (X direction). In detail, batch processing region R1 is located inside processing block 6. Batch transfer region R2 is adjacent to batch processing region R1 and is located at the leftmost side of processing block 6.

[0051] The batch processing area R1 in the processing block 6 is a rectangular area extending in the front-to-rear direction (X direction). One end (front side) of the batch processing area R1 is adjacent to the transfer block 5. The other end (rear side) of the batch processing area R1 extends in a direction away from the transfer block 5. When transporting a row of substrates from the transfer block 5 to the processing block 6, a substrate transport mechanism WTR provided in the processing block 6 is used.

[0052] The substrate transport mechanism WTR transports multiple substrates W in a vertical position all at once between the transfer block 5, the batch processing units BPU1 to BPU3, and the batch drying chamber DC. The substrate transport mechanism WTR can hold a row of substrates W in a vertical position. For example, the substrate transport mechanism WTR can transfer the row of substrates obtained from the pusher 251 of the transfer block 5 to the lifter of each batch processing unit. The substrate transport mechanism WTR can access the pusher 251 of the transfer block 5, the substrate row support part 27, the lifters of the processing block 6, and the batch drying chamber DC.

[0053] The batch processing region R1 is equipped with a batch processing section that performs batch processing. Specifically, the batch processing region R1 includes a batch drying chamber DC that dries multiple substrates W in a batch, and multiple batch processing units BPU1 to BPU3 that immerse multiple substrates W in a batch, arranged in the direction in which the batch processing region R1 extends. The batch processing units BPU1 to BPU3 immerse multiple substrates in a vertical position in a batch. The arrangement of the batch drying chamber DC and the batch processing units BPU1 to BPU3 will be described in detail below. The batch drying chamber DC is adjacent to the transfer block 5 from the rear. The first batch processing unit BPU1 is adjacent to the batch drying chamber DC from the rear. The second batch processing unit BPU2 is adjacent to the first batch processing unit BPU1 from the rear. The third batch processing unit BPU3 is adjacent to the second batch processing unit BPU2 from the rear. Therefore, the batch drying chamber DC, the first batch processing unit BPU1, the second batch processing unit BPU2, and the third batch processing unit BPU3 are arranged in this order so as to be farther away from the transfer block 5.

[0054] The batch processing units BPU1 to BPU3 have batch processing tanks capable of holding liquid. The batch processing tanks are liquid tanks that hold sulfuric acid or pure water. The batch processing tanks that hold sulfuric acid are called sulfuric acid tanks CHB2 to CHB3, and the batch processing tank that holds pure water (hot pure water) is called a batch rinse processing tank ONB. The sulfuric acid tanks CHB2 to CHB3 are configured to hold hot sulfuric acid in particular.

[0055] <5. Configuration of batch processing unit> The configuration of the batch processing apparatus of this embodiment will be described below using the second batch processing unit BPU2 as an example. Specifically, the second batch processing unit BPU2 includes a sulfuric acid tank CHB2 that stores sulfuric acid, and a lifter LF2 that raises and lowers the substrate array between a substrate transfer position and an immersion position (see FIG. 1). The substrate transfer position is a position set above the sulfuric acid tank CHB2 that is accessible by the substrate transport mechanism WTR, and the immersion position is a position set within the sulfuric acid tank CHB2 that allows the entire substrate array to be immersed in sulfuric acid. The second batch processing unit BPU2 performs SPM processing on the substrate array.

[0056] The lifter LF2 can hold a row of substrates. The lifter LF2 holds a row of substrates consisting of vertically oriented substrates arranged horizontally, and can switch between a standby state in which the row of substrates is above the liquid surface in the sulfuric acid tank CHB2 and an immersed state in which the row of substrates is below the liquid surface. Lifters provided in other processing tanks can also hold rows of substrates, similar to the lifter LF2. The batch drying chamber DC can store rows of substrates.

[0057] 4 illustrates the specific configuration of the batch processing unit BPU2. Specifically, the batch processing unit BPU2 is divided into a mist processing area 30a for hydrogen peroxide mist processing and a submersion processing area 30b for submerging the substrate rows in hot sulfuric acid. The mist processing area 30a is located above the submersion processing area 30b. Therefore, the lifter LF2 can move up and down to move the substrate rows between the mist processing area 30a and the submersion processing area 30b.

[0058] As shown in Figure 4, the mist treatment area 30a has side walls 31 that form a space for accommodating the lifter LF2. The side walls 31 are tapered so that the space narrows toward the bottom. This configuration allows moisture adhering to the inside of the side walls 31 to flow down the side walls 31 and collect at the bottom of the mist treatment area 30a, making it easy to collect moisture in the mist treatment area 30a.

[0059] A pair of covers 32 are provided at the bottom of the mist treatment area 30a, separating the mist treatment area 30a from the immersion treatment area 30b. The pair of covers 32 rotate synchronously to switch between an open state, which allows the lifter LF2 in the mist treatment area 30a to pass through to the immersion treatment area 30b, and a closed state, which prevents the lifter LF2 from passing through. The pair of covers 32 are waterproof. Therefore, when the pair of covers 32 are closed, moisture from the mist treatment area 30a does not leak into the immersion treatment area 30b. In other words, the covers 32 can be displaced between a closed state, which covers the upper part of the sulfuric acid tank CHB2, and an open state, which moves the covers away from the upper part of the sulfuric acid tank CHB2. The covers 32 can be closed when the lifter LF2 is located in the mist treatment area 30a, or they can be closed when the lifter LF2 is located in the immersion treatment area 30b. In either case, when the cover 32 is in the closed state, liquids such as hydrogen peroxide solution and pure water in the mist treatment area 30a cannot pass through the cover 32, and as a result cannot reach the sulfuric acid tank CHB2.

[0060] The cover drive mechanism 37 rotates the pair of covers 32 synchronously to switch the state of the covers 32 .

[0061] The mist treatment area 30a is provided with a plurality of nozzle heads 33 that generate hydrogen peroxide mist. The nozzle heads 33 are provided on the left and right sides of the substrate row, and spray the hydrogen peroxide mist diagonally downward. The sprayed hydrogen peroxide mist heads toward the substrate row, and some of it adheres to the surfaces of the substrates W that make up the substrate row. The nozzle heads 33 are located at the ends of supply pipes 34 that extend horizontally. The nozzle heads 33 supply hydrogen peroxide to the substrate row, and correspond to the mist supply unit of the present invention. The supply pipes 34 are provided to protrude from the side wall 31 toward the lifter LF2.

[0062] On the other hand, the shower heads 35 are capable of spraying pure water and are provided above the nozzle head 33. The shower heads 35 are provided on the left and right sides of the side wall 31 and spray pure water toward the side wall 31. The pure water sprayed from the shower heads 35 flows down the side wall 31 and reaches the bottom of the mist treatment area 30a. At this time, the cover 32 is in a closed state, so the pure water does not reach the immersion treatment area 30b.

[0063] The shower head 35 is located at the tip of a horizontally extending supply pipe 36. The supply pipe 36 is provided so as to protrude from the side wall 31 toward the lifter LF2.

[0064] The bottom of the mist processing area 30a has an outlet 38 for discharging the collected liquid. The outlet 38 is connected to a tank that mainly stores hydrogen peroxide solution. The tank serves as a supply source for supplying hydrogen peroxide solution to the nozzle head 33. Therefore, the hydrogen peroxide solution stored in the tank returns to the tank via the supply pipe 34, the nozzle head 33, and the outlet 38. If the hydrogen peroxide solution is configured to circulate, the amount of hydrogen peroxide solution used can be reduced. The outlet pipe 39 connects the outlet 38 to the tank.

[0065] The outlet 38 located at the bottom of the mist treatment area 30a is configured to discharge, for example, the hydrogen peroxide solution adhering to the surfaces of the pair of covers 32 to the outside of the mist treatment area 30a.

[0066] Next, the immersion treatment area 30b will be described. The immersion treatment area 30b is mainly composed of a sulfuric acid tank CHB2. Hot sulfuric acid Su is held in the sulfuric acid tank CHB2. The sulfuric acid tank CHB2 has an open top and can receive the lifter LF2 that has passed through the open cover 32. The sulfuric acid tank CHB2 has a plurality of drain ports 61 at its bottom, which are connected to the circulation system 30c, which will be described later. In addition, the sulfuric acid tank CHB2 has a liquid supply port 62 at its top, which is also connected to the circulation system 30c, which will be described later.

[0067] The hot sulfuric acid Su in the sulfuric acid tank CHB2 is heated through a circulation system 30c provided outside the sulfuric acid tank CHB2. This allows the hot sulfuric acid Su to be maintained at a constant temperature. Specifically, the temperature of the hot sulfuric acid Su is set slightly higher than the temperature suitable for the chemical reaction in the mist treatment area 30a. That is, the substrate array in the mist treatment area 30a is heated to a high temperature and then slightly cooled by the hydrogen peroxide mist to a temperature suitable for the chemical reaction. Specifically, the chemical reaction referred to here is the resist layer removal reaction using Caro's acid.

[0068] Next, a specific configuration of the circulation system 30c will be described. The circulation system 30c has branch pipes 51 provided at each of the drainage ports 61 and a main pipe 52 communicating with the branch pipes 51. The main pipe 52 is configured to circulate the sulfuric acid collected by the plurality of branch pipes 51. The main pipe 52 is also connected to a liquid supply port 62. Therefore, the main pipe 52 is configured to circulate the sulfuric acid that flows in from the branch pipes 51 to the liquid supply port 62, thereby causing the sulfuric acid to flow out to the sulfuric acid tank CHB2.

[0069] Various components are provided along the main pipe 52. Specifically, a filter 53, a heater 54, and a pump 55 are provided along the main pipe 52 from upstream to downstream.

[0070] The filter 53 is provided for the purpose of protecting the downstream heater 54. The filter 53 is configured to prevent solid matter adhering to the row of substrates in the sulfuric acid tank CHB2 from passing through the heater 54. The solid matter collected by the filter 53 includes, for example, resist layer residues peeled off from the row of substrates.

[0071] The heater 54 has a thermometer that monitors the temperature of the sulfuric acid passing through the heater 54. If it is determined that the temperature of the sulfuric acid is low, the heater 54 starts heating the sulfuric acid. When the temperature of the sulfuric acid increases and reaches a predetermined temperature, the heater 54 stops heating the sulfuric acid. In this way, the heater 54 manages the temperature of the sulfuric acid by feedback control. The thermometer used by the heater 54 for temperature management can be provided in the heater 54, or in any of the sulfuric acid tank CHB2 or circulation system 30c.

[0072] The pump 55 is a driving unit that generates a flow of sulfuric acid that flows through the main pipe 52. The pump 55 receives the sulfuric acid that has flowed out from the heater 54 and delivers it to the liquid supply port 62 of the sulfuric acid tank CHB2.

[0073] The main pipe 52 has a branch pipe 56 between the heater 54 and the pump 55. The branch pipe 56 is connected to a drain that is used to remove sulfuric acid from the sulfuric acid tank CHB2. A valve 57 controls whether or not sulfuric acid is circulated through the branch pipe 56. The valve 57 is always closed during substrate processing. The valve 57 is opened during maintenance of the sulfuric acid tank CHB2.

[0074] In this way, circulation system 30c receives sulfuric acid, whose temperature has been lowered by the entry of the substrate train, from drain port 61 and passes it through filter 53. The sulfuric acid that has passed through filter 53 is appropriately heated by heater 54 and reaches pump 55. Pump 55 receives the heated sulfuric acid and delivers it to supply port 62. Heated sulfuric acid flows into sulfuric acid tank CHB2 from supply port 62. In this way, the hot sulfuric acid Su in sulfuric acid tank CHB2 in this example waits for the arrival of the substrate train while maintaining a constant temperature.

[0075] The sulfuric acid in the sulfuric acid tank CHB2 is at a temperature (e.g., 110°C to 140°C) higher than the target temperature (e.g., 110°C) suitable for SPM processing to remove the resist layer from the substrate W. This is a measure to prevent the temperature of the substrate W from dropping due to the supply of hydrogen peroxide mist during SPM processing. The substrate W heated by the sulfuric acid is cooled by the hydrogen peroxide mist to the target temperature and undergoes SPM processing.

[0076] The sulfuric acid tank CHB2 is provided with a lifter LF2 that moves the array of substrates up and down. The lifter LF2 moves up and down in the vertical direction (Z direction). Specifically, the lifter LF2 moves up and down between an immersion position inside the sulfuric acid tank CHB2 and a substrate row transfer position above the sulfuric acid tank CHB2. The lifter LF2 holds the array of substrates W in a vertical position. At the transfer position, the lifter LF2 transfers the array of substrates to and from the substrate transport mechanism WTR. When the lifter LF2 moves down from the transfer position to the immersion position while holding the array of substrates, the entirety of the substrates W is positioned below the surface of the chemical solution. When the lifter LF2 moves up from the immersion position to the transfer position while holding the array of substrates, the entirety of the substrates W is positioned above the surface of the chemical solution. The lifter LF2 can immerse the array of substrates all at once in the batch processing tank. At this time, the lifter LF2 moves down from the transfer position to the immersion position.

[0077] The lifter LF2 can also position the substrate row at a mist treatment position set in the mist treatment area 30a. The mist treatment position is a position between the transfer position and the immersion position in the vertical direction Z.

[0078] The third batch processing unit BPU3 has the same configuration as the second batch processing unit BPU2 described above. Therefore, the substrate row is subjected to SPM processing in one of the sulfuric acid tanks CHB2 to CHB3, and then mist processing above the sulfuric acid tanks CHB2 to CHB3. By performing chemical processing in two processing units in this way, the throughput of the apparatus is increased.

[0079] <6. Other configurations in the processing block> The following describes the configuration of the processing block 6, excluding the batch processing units BPU2 and BPU3. Specifically, the first batch processing unit BPU1 includes a batch rinse processing bath ONB containing pure water and a lifter LF1 that raises and lowers the array of substrates between a substrate transfer position and a rinse position. The substrate transfer position is a position above the batch rinse processing bath ONB accessible to the substrate transport mechanism WTR, and the rinse position is a position within the batch rinse processing bath ONB where the array of substrates can be immersed in pure water. The batch rinse processing bath ONB has a configuration similar to the sulfuric acid bath CHB2 described above. That is, the batch rinse processing bath ONB contains pure water and is equipped with a lifter LF1. Unlike the other processing baths, the batch rinse processing bath ONB contains pure water and is provided for the purpose of cleaning chemicals adhering to multiple substrates W. In the batch rinse processing bath ONB, the cleaning process is completed when the resistivity of the pure water in the bath increases to a predetermined value.

[0080] As described above, the batch rinse processing tank ONB in ​​this embodiment is located closer to the transfer block 5 than the sulfuric acid tanks CHB2 to CHB3. This configuration allows the mechanisms that make up the transfer block 5 to be separated as far as possible from the sulfuric acid tanks CHB2 to CHB3, preventing the pusher mechanism 25 and other components from being adversely affected by sulfuric acid. Furthermore, by arranging the transfer block 5 and the batch drying chamber DC in close proximity, the array of substrates that have completed the rinsing process are transported a short distance and immediately returned to the transfer block 5.

[0081] The batch drying chamber DC is located between the first batch processing unit BPU1 and the transfer block 5. The batch drying chamber DC has a drying chamber that accommodates a substrate array consisting of vertically aligned substrates W. The drying chamber has an inert gas supply nozzle that supplies an inert gas into the chamber and a vapor supply nozzle that supplies organic solvent vapor into the tank. The batch drying chamber DC first supplies inert gas to the substrate array supported in the chamber, replacing the atmosphere in the chamber with the inert gas. Then, pressure reduction within the chamber begins. While the chamber is under reduced pressure, organic solvent vapor is supplied into the chamber. The organic solvent is discharged outside the chamber, along with moisture adhering to the substrates W. In this way, the batch drying chamber DC dries the substrate array. The inert gas may be, for example, nitrogen, and the organic solvent may be, for example, IPA (isopropyl alcohol).

[0082] In the substrate processing apparatus 1, the substrate row support section 27, the batch drying chamber DC, and the batch processing units BPU1 to BPU3 are arranged in the front-to-rear direction. That is, the substrate row support section 27 is arranged in the front, and the batch drying chamber DC is arranged behind it. The batch processing units BPU1 to BPU3 are arranged further behind it. In the substrate processing apparatus 1 of this embodiment, the internal layout of the apparatus is optimized to reduce the movement distance of the substrate transport mechanism WTR.

[0083] <7. Other configurations> Next, a control unit included in the substrate processing apparatus 1 will be described. FIG. 1 can be referred to for the control unit 131 included in the substrate processing apparatus 1. Although not shown in FIG. 1, the control unit 131 is provided with a corresponding storage unit. The control unit 131 is configured, for example, by a CPU (Central Processing Unit). The specific configuration of the control unit is not limited, and for example, each control unit may be configured by a single processor, or each control unit may be configured by an individual processor.

[0084] The control unit 131 controls, for example, the carrier transport mechanism 11, the handling robot HTR, the HVC attitude conversion unit 23, the pusher mechanism 25, the substrate transport mechanism WTR, the batch processing units BPU1 to BPU3, and the batch drying chamber DC.

[0085] Control of the batch processing units BPU2 to BPU3 includes, for example, control of the nozzle head 33, control of the shower head 35, control of the cover driving mechanism 37, control of the heater 54, control of the pump 55, and the like.

[0086] The control unit 131 particularly controls the lifter LF2 to immerse the standby substrate row above the sulfuric acid tank CHB2 and return the immersed substrate row to the standby state, and controls the nozzle head 33 to supply hydrogen peroxide mist to the substrate row lifted up from the sulfuric acid. Furthermore, the control unit 131 controls the lifter LF2 to immerse the standby substrate row in the immersion state, thereby immersing the substrates that have been treated with the hydrogen peroxide mist again in sulfuric acid.

[0087] Furthermore, after the substrate row is lifted from the sulfuric acid tank and before the hydrogen peroxide mist is supplied, the control unit 131 controls the cover driving mechanism 37 to close the cover 32 that is in the open state.

[0088] A storage unit (not shown) stores programs, parameters, and the like required for the operation of the control unit 131. The storage unit may be provided individually for each of the various functions realized by the control unit 131, or may be realized by a single storage device. There are no particular limitations on the specific configuration of the storage unit.

[0089] <8. Operation of the batch processing unit> Hereinafter, the operation of the batch processing unit will be described with reference to Fig. 5 etc. Since the substrate processing apparatus 1 of this example has multiple batch processing units, the operation of the batch processing unit BPU2 will be described as a representative of these units in the following explanation. The operation of the other batch processing units is the same as that of the batch processing unit BPU2.

[0090] 5 is a flowchart for explaining the operation of the batch processing unit BPU2. The flowchart includes steps S1 to S8.

[0091] Step S1: The substrate transport mechanism WTR transports the row of unprocessed substrates to a substrate transfer position provided in the batch processing unit BPU2. The lifter LF2 then retrieves the row of substrates from the substrate transport mechanism WTR. The lifter LF2 then descends as shown in FIG. 6. The row of substrates then passes through the mist treatment area 30a and continues to descend. At this time, the cover 32 is in the open state.

[0092] Step S2: As shown in Figure 7, the lifter LF2 descends to the sulfuric acid tank CHB2 in the immersion processing area 30b. As a result, the entire substrates W constituting the substrate row are submerged under the liquid surface of the hot sulfuric acid Su. In this manner, the immersion processing of the substrate row is performed. In this manner, this step immerses the substrate row, which is composed of vertically oriented substrates arranged horizontally, in sulfuric acid.

[0093] Step S3: After the immersion treatment, the lifter LF2 raises the substrate row to the mist treatment position provided in the mist treatment area 30a. Then, the entire substrates W constituting the substrate row are above the liquid surface of the hot sulfuric acid Su. In this way, this step lifts the entire substrate row out of the sulfuric acid.

[0094] Step S4: Then, the cover driving mechanism 37 closes the cover 32, as shown in Fig. 8. This makes it possible to separate the sulfuric acid tank CHB2 from the hydrogen peroxide atmosphere.

[0095] 9 shows the substrate row in this step. The substrate row is positioned above the sulfuric acid bath CHB2. Each substrate W in the substrate row has a sulfuric acid liquid film 41 formed on its front and back surfaces.

[0096] Step S5: Thereafter, as shown in FIG. 10, a mist of hydrogen peroxide solution is sprayed from the nozzle head 33 toward the substrates W. FIG. 11 shows the row of substrates in this step. The row of substrates is positioned above the closed cover 32. Each substrate W constituting the row of substrates is in an atmosphere containing a mist of hydrogen peroxide solution. At this time, an SPM film 42 is generated on the front and back surfaces of each substrate W by adding hydrogen peroxide to a sulfuric acid liquid film 41. In this manner, the substrates W undergo SPM treatment. Since the SPM in the present invention is generated in limited areas on the substrate surface, only a small amount of hydrogen peroxide solution is required to generate the SPM. As such, the configuration of the present invention makes it possible to significantly conserve chemicals, particularly hydrogen peroxide solution, used in SPM treatment.

[0097] In this step, as shown in FIG. 12, the lifter LF2 moves the substrate row up and down from the mist treatment position, thereby distributing the hydrogen peroxide mist over the entire surfaces of the substrates W constituting the substrate row. In this way, this step supplies the hydrogen peroxide mist to the lifted substrate row. In addition, in this step, the substrate row is moved back and forth. In this way, the substrates W are reliably chemically treated with the SPM film 42.

[0098] Step S6: Thereafter, the cover drive mechanism 37 opens the cover 32 as shown in Figure 13. The cover 32 opens after the supply of hydrogen peroxide mist has finished. This prevents the hydrogen peroxide mist from falling on the sulfuric acid tank CHB2.

[0099] Step S7: The lifter LF2 begins to descend, and eventually, as shown in FIG. 14, the substrate row is immersed again in the sulfuric acid tank CHB2. As a result, the entire substrates W making up the substrate row are below the surface of the hot sulfuric acid Su. In this manner, the substrate row is re-immersed. In this step, the substrate row is immersed again in sulfuric acid after the hydrogen peroxide mist has been supplied to the substrate row.

[0100] Step S8: Thereafter, the cover driving mechanism 37 closes the cover 32 as shown in Fig. 15. In this manner, the cover 32 can be closed even when the lifter LF2 is in the immersion position.

[0101] Step S9: Thereafter, as shown in Fig. 16, pure water is sprayed from the shower head 35. As a result, the hydrogen peroxide solution adhering to the side wall 31 and the like is washed away with the pure water.

[0102] Step S10: Thereafter, the cover drive mechanism 37 opens the cover 32 as shown in FIG.

[0103] Step S11: The lifter LF2, which is in the immersion position, rises again and moves the array of substrates to the substrate transfer position set in the batch processing unit BPU2. The array of substrates is then moved to a position accessible to the substrate transport mechanism WTR. The array of substrates is then transferred between the lifter LF2 and the substrate transport mechanism WTR. This completes the operation of the batch processing unit BPU2 in this example.

[0104] <9. Substrate processing flow> The flow of substrate processing using the substrate processing apparatus of this example will be described below. Fig. 18 is a flowchart illustrating the flow of substrate processing of this example. Details of the processing will be described below with reference to this figure.

[0105] Step S21: The carrier C placed on the load port 9 is taken into the substrate processing apparatus 1, transported by the carrier transport mechanism 11, and placed on the carrier mounting shelf 13a. The handling robot HTR retrieves the substrate row from the carrier C.

[0106] Step S22: The handling robot HTR hands over the substrate row made up of substrates W in a horizontal position to the HVC position conversion unit 23. The HVC position conversion unit 23 converts the position of the substrates W making up the substrate row from a horizontal position to a vertical position by rotating the substrate row by 90°.

[0107] Step S23: The substrate row whose orientation has been changed is transported by the substrate transport mechanism WTR to, for example, the batch processing unit BPU2, where it undergoes chemical processing. Specifically, as described above, this chemical processing includes an immersion process in the sulfuric acid tank CHB2, a mist treatment using a hydrogen peroxide solution mist, and a re-immersion process in the sulfuric acid tank CHB2. This step can also be performed by the batch processing unit BPU3 instead of the batch processing unit BPU2.

[0108] Step S24: After the chemical liquid processing, the row of substrates is transported by the substrate transport mechanism WTR to the first batch processing unit BUP1, where it is subjected to a cleaning process with pure water.

[0109] Step S25: After the cleaning process, the row of substrates is transported by the substrate transport mechanism WTR to the batch drying chamber DC, where it is subjected to the drying process.

[0110] Step S26: The substrate transport mechanism WTR passes the substrate row made up of substrates W in a vertical position to the pusher mechanism 25. The HVC position conversion unit 23 rotates the substrate row received from the pusher mechanism 25 by 90 degrees to convert the position of the substrates W making up the substrate row from a vertical position to a horizontal position.

[0111] Step S27: The handling robot HTR returns the row of processed substrates to an empty carrier C. Thereafter, the carrier C is transported to the load port 9 by the carrier transport mechanism 11. In this way, the substrate processing in this example is completed.

[0112] <10. Effects of this Example Configuration> As described above, the substrate processing apparatus 1 of this embodiment includes step S2 (immersion process) of immersing a row of substrates W arranged in a horizontal direction in sulfuric acid, step S3 (lifting process) of lifting the entire row of substrates out of the sulfuric acid, and step S5 (mist supply process) of supplying a hydrogen peroxide mist to the lifted row of substrates. In this manner, only the sulfuric acid liquid film adhering to the surfaces of the substrates W is converted into SPM. As a result, the amount of hydrogen peroxide consumed in the chemical processing of the present invention is significantly reduced compared to conventional methods.

[0113] According to the above-described configuration, after step S5 (mist supplying step), step S8 (re-immersion step) is provided in which the substrate row is immersed again in sulfuric acid, thereby ensuring more reliable substrate processing of the substrates W.

[0114] According to the above-mentioned configuration, in step S5 (mist supplying process), the row of substrates moves up and down in a space above the liquid surface of the sulfuric acid. With this configuration, the hydrogen peroxide solution can be distributed over the entire substrates.

[0115] According to the above-described configuration, the sulfuric acid temperature during the immersion process is higher than the target temperature suitable for stripping the resist layer by SPM processing. This configuration allows substrate processing to be performed at an appropriate temperature in step S5 (mist supply process). The substrate W in step S5 (mist supply process) is cooled by the hydrogen peroxide mist. However, in this configuration, since the substrate W is heated to a high temperature during the immersion process, the substrate W is cooled by the hydrogen peroxide mist to a temperature appropriate for stripping the resist layer.

[0116] The substrate processing apparatus 1 of the present invention includes a control unit 131 that controls the lifter LF2 and the nozzle head 33. The control unit 131 controls the lifter LF2 to put the row of substrates in a standby state into an immersed state, controls the lifter LF2 to put the row of immersed substrates in a standby state, thereby lifting the entire row of substrates out of the sulfuric acid, and controls the nozzle head 33 to supply a hydrogen peroxide mist to the row of substrates lifted out of the sulfuric acid. With this configuration, it is possible to provide a substrate processing apparatus 1 that exhibits the effects of the present invention described above.

[0117] The above-described configuration controls the lifter LF2 to immerse the waiting substrate row in the immersion state, thereby immersing the substrates W to which the hydrogen peroxide mist has been supplied in sulfuric acid. With this configuration, the above-described re-immersion process can be reliably achieved.

[0118] The above-described configuration includes cover 32, which can be moved between a closed state covering the sulfuric acid tank CHB2 and an open state away from the sulfuric acid tank CHB2, and cover drive mechanism 37 that operates cover 32. After the substrate row is lifted from sulfuric acid tank CHB2 and before hydrogen peroxide mist is supplied, controller 131 controls cover drive mechanism 37 to close the open cover. This configuration allows the cover to insulate the space where substrates are processed with sulfuric acid from the space where substrates are processed with hydrogen peroxide. This reliably prevents hydrogen peroxide mist from mixing with the sulfuric acid.

[0119] The above-described configuration includes an outlet 38 for discharging hydrogen peroxide solution adhering to the cover 32. With this configuration, even when the cover 32 is open, the hydrogen peroxide solution adhering to the cover 32 will not reach the sulfuric acid tank CHB2. Furthermore, with this configuration, the hydrogen peroxide solution is recovered, making it easy to reuse the hydrogen peroxide solution for spraying mist.

[0120] <11. Variations> The present invention is not limited to the above-described embodiment, but can be modified as follows.

[0121] <Variation 1> In the above-described embodiment, the mist treatment region 30a and the immersion treatment region 30b are arranged in the vertical direction Z, but the present invention is not limited to this configuration. As shown in FIG. 19, the mist treatment region 30a and the immersion treatment region 30b may be arranged horizontally. This configuration allows the cover 32 and the cover drive mechanism 37 to be omitted. The mist treatment region 30a and the immersion treatment region 30b are each provided with a lifter LF. Each lifter LF can move the substrate array up and down from an upper position where the substrate array can be handed over from the substrate transport mechanism WTR to a chemical treatment position where the substrate array is chemically treated. The substrate array is moved between the mist treatment region 30a and the immersion treatment region 30b by the substrate transport mechanism WTR.

[0122] <Variation 2> In the above-described embodiment, the mist treatment area 30a is provided for treating the substrate rows with a hydrogen peroxide mist, but the present invention is not limited to this configuration. Substrate treatment similar to that of the embodiment can be achieved by using hydrogen peroxide vapor instead of hydrogen peroxide mist.

[0123] <Variation 3> In the above-described embodiment, there is no particular limitation on the method of arranging the nozzle heads 33 for the hydrogen peroxide water mist. However, the nozzle heads 33 may also be arranged as shown in FIG. 20 . According to this third modification, there is a first nozzle head array 71 composed of nozzle heads 33 at the same position in the front-rear direction X, and a second nozzle head array 72 at a different position from the first nozzle head array 71 in the front-rear direction X. The second nozzle head array 72 is composed of nozzle heads 33 at the same position in the front-rear direction X. The nozzle heads 33 constituting the first nozzle head array 71 are arranged at equal intervals in the left-right direction Y. Similarly, the nozzle heads 33 constituting the second nozzle head array 72 are also arranged at equal intervals in the left-right direction Y. In the first nozzle head array 71 and the second nozzle head array 72, the distance between adjacent nozzle heads 33 in the left-right direction Y is the same as the predetermined distance H. The nozzle heads 33 constituting the second nozzle head array 72 are shifted in the left-right direction Y from the nozzle heads 33 constituting the first nozzle head array 71 by half the predetermined distance H.

[0124] That is, this modified example includes a first nozzle head array 71 in which nozzle heads 33 are lined up at a predetermined distance H in the arrangement direction of the substrates W that make up the substrate row, and a second nozzle head array 72 in which nozzle heads 33 are lined up at a predetermined distance H in the arrangement direction of the substrates W and which, together with the first nozzle head array 71, sandwich the substrate row in a direction perpendicular to the substrate arrangement direction, and the nozzle heads 33 that make up the second nozzle head array 72 are shifted in the arrangement direction of the substrates W by half the predetermined distance H from the nozzle heads 33 that make up the first nozzle head array 71. With this configuration, it is possible to supply a hydrogen peroxide water mist evenly to the substrate row.

[0125] <Variation 4> The operation of the batch processing unit in the above-described embodiment is one example. Sidewall cleaning processing may be performed after the transfer of the substrates, as shown in the flowchart of FIG. 21. That is, steps T1 to T7 in FIG. 21 correspond to steps S1 to S7 in the embodiment. The operation of the batch processing unit in this modification is the same as the operation in the embodiment described in FIG. 5 up to the process of re-immersing the substrates W in the sulfuric acid tank CHB2. Hereinafter, the operation from step T8 onwards in this modification will be described with reference to FIG. 21.

[0126] Step T8: The lifter LF2, which is in the immersion position, rises again and moves the row of substrates to the substrate transfer position set in the batch processing unit BPU2. The row of substrates is then moved to a position accessible to the substrate transport mechanism WTR. The row of substrates is then transferred between the lifter LF2 and the substrate transport mechanism WTR.

[0127] Step T9: Thereafter, the cover drive mechanism 37 closes the cover 32 as shown in FIG.

[0128] Step T10: Thereafter, pure water is sprayed from the shower head 35. This washes away any hydrogen peroxide solution adhering to the sidewall 31 and the like. At this time, the cover 32 is in the closed state, so the sprayed pure water does not fall on the sulfuric acid tank CHB2. This completes the operation of the batch processing unit BPU2 of this modified example. [Explanation of symbols]

[0129] 1. Substrate processing equipment 1A housing 3 Stocker Block 5 Transfer block 6 Processing Blocks 7. Mounting plate 9 Loading Port 11 Carrier transport mechanism 13a Carrier placement shelf 13b Shelf 23 HVC attitude change unit 25 Pusher mechanism 27 Board row support 30a Mist treatment area 30b Immersion treatment area 30c Circulatory system 31 Side wall 32 Cover 33 Nozzle head 34 Supply pipe 35 shower head 36 Supply pipe 37 Cover drive mechanism 38 Outlet 39 Discharge pipe 41 Sulfuric acid liquid film 42 SPM membrane 51 Branch pipe 52 Master 53 filters 54 Heater 55 Pump 56 Branch Pipe 57 Valve 61 Drainage port 62 Liquid supply port 71 1st nozzle head arrangement 72 Second nozzle head arrangement 131 Control Unit 211 hands 213 Moving support mechanism 231 Mounting rod 232 Clamping rod 237 Support stand 238 Rotational Drive Mechanism 251 Pusher 251a U groove 254 Pusher shift mechanism 255 Pusher lifting mechanism C Carrier CHB2 Sulfuric acid tank CHB3 Sulfuric acid tank BPU1 First batch processing unit BPU2 Second batch processing unit BPU3 Third batch processing unit DC Drying Chamber H Predetermined distance HTR Handling Robot LF Lifter LF1 Lifter LF2 Lifter LF3 Lifter ONB batch rinse processing tank R1 Batch Processing Area R2 Bulk transport area S slot Su hot sulfuric acid W substrate WTR transport mechanism

Claims

1. an immersion step in which a substrate array formed by arranging vertically oriented substrates in a horizontal direction is immersed in sulfuric acid; a step of lifting the entire array of substrates out of sulfuric acid; a mist supplying step of supplying a hydrogen peroxide mist to the pulled-up substrate row. A substrate processing method comprising:

2. 2. The substrate processing method according to claim 1, After the mist supplying step, a re-immersion step is provided in which the substrate array is immersed again in sulfuric acid. A substrate processing method comprising:

3. 2. The substrate processing method according to claim 1, During the mist supply process, the substrate array moves up and down in a space above the liquid surface of the sulfuric acid. A substrate processing method comprising:

4. 2. The substrate processing method according to claim 1, the array of substrates has a resist layer; The sulfuric acid in the immersion process is at a temperature higher than the target temperature suitable for stripping the resist layer. A substrate processing method comprising:

5. a sulfuric acid tank capable of holding sulfuric acid; a lifter that holds a substrate array formed by arranging vertically oriented substrates in a horizontal direction and is capable of switching between a standby state in which the substrate array is above the liquid surface in the sulfuric acid bath and an immersed state in which the substrate array is below the liquid surface; a mist supply unit that supplies a hydrogen peroxide water mist to the substrate row; A control unit is provided to control the lifter and the mist supply unit, The control unit Controlling the lifter to immerse the waiting substrate row; controlling the lifter to place the immersed substrate row in a standby state, thereby lifting the entire substrate row out of the sulfuric acid; The mist supply unit is controlled to supply a hydrogen peroxide mist to the substrate row that has been lifted out of the sulfuric acid. A substrate processing apparatus characterized by:

6. 6. The substrate processing apparatus according to claim 5, The control unit The lifter is controlled to immerse the waiting substrate row in the sulfuric acid, so that the substrates to which the hydrogen peroxide mist has been supplied are immersed in the sulfuric acid. A substrate processing apparatus characterized by:

7. 6. The substrate processing apparatus according to claim 5, the mist supply unit has a nozzle head provided at the tip of a nozzle that supplies hydrogen peroxide solution, a first nozzle head array in which the nozzle heads are arranged at predetermined intervals in an arrangement direction of the substrates; the nozzle heads are arranged at predetermined intervals in the substrate arrangement direction, and a second nozzle head array is provided which, together with the first nozzle head array, sandwiches the substrate row in a direction perpendicular to the substrate arrangement direction; The nozzle heads constituting the second nozzle head array are provided at positions shifted from the nozzle heads constituting the first nozzle head array by half a predetermined distance in the arrangement direction of the substrate. A substrate processing apparatus characterized by:

8. 6. The substrate processing apparatus according to claim 5, a cover that is displaceable between a closed state that covers the upper part of the sulfuric acid tank and an open state that moves to a position away from the upper part of the sulfuric acid tank; a cover drive mechanism for operating the cover, The control unit After the substrate row is lifted out of the sulfuric acid tank, the cover driving mechanism is controlled to close the cover that is in the open state before the hydrogen peroxide water mist is supplied. A substrate processing apparatus characterized by:

9. 9. The substrate processing apparatus according to claim 8, An outlet for discharging hydrogen peroxide solution adhering to the cover is provided. A substrate processing apparatus characterized by:

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